JP2023032072A - Temperature measurement system and temperature measurement method - Google Patents

Abstract

To provide a temperature measurement system and a temperature measurement method that can measure temperature of a measuring object in a chamber in a non-contact manner.SOLUTION: A temperature measurement system comprises: a light source 72 that emits excitation light; a fluorescent body 110 that is provided for a measuring object within a chamber 12 of a processing apparatus 10 and emits fluorescent light; a first optical unit 80 that is provided outside the chamber, and emits the excitation light from the light source; a second optical unit 90 that is provided in the chamber to face the first optical unit across a window of the chamber, injects the excitation light through the window from the first optical unit, and emits the excitation light on the fluorescent body; a fluorescent light measuring instrument 74 that measures a feature amount of the fluorescent light; and a temperature calculation unit C5 that calculates temperature of the measuring object on the basis of the feature amount of the fluorescent light measured by the fluorescent light measuring instrument and a temperature characteristic of the feature amount which is previously acquired. The second optical unit is configured to emit the fluorescent light from the fluorescent body to the first optical unit through the window, and the first optical unit is configured to inject the fluorescent light from the second optical unit through the window, and to guide the fluorescent light to the fluorescent light measuring instrument.SELECTED DRAWING: Figure 3

Description

Embodiments of the present disclosure relate to temperature measurement systems and methods.

Patent Literature 1 discloses a method of calculating the temperature of a phosphor using a fluorescence thermometer. This method includes a fluorescence detection step of detecting fluorescence emitted from a phosphor, a signal conversion step of converting an intensity-time signal of the fluorescence into a frequency domain signal, and a change amount of a predetermined frequency component in the signal. and a temperature calculation step of calculating the temperature of the test object.

JP 2012-211848 A

The present disclosure provides a temperature measurement system and temperature measurement method capable of contactlessly measuring the temperature of an object to be measured in a chamber.

A temperature measurement system according to an aspect of the present disclosure includes a light source that emits excitation light, a phosphor that is provided on an object to be measured in a chamber of a processing apparatus and that emits fluorescence when irradiated with excitation light, and an exterior of the chamber. provided inside the chamber so as to face the first optical unit across a window provided in the chamber, the first optical unit configured to emit excitation light from the light source; a second optical section configured to enter excitation light from the section through a window and emit the excitation light to the phosphor; a fluorometer configured to measure a characteristic amount of fluorescence; a temperature calculation unit configured to calculate the temperature of the measurement object based on the feature amount of fluorescence measured by the measuring device and the temperature characteristic of the feature amount obtained in advance, wherein the second optical unit is , the fluorescence from the phosphor is emitted to the first optical section through the window, the first optical section receives the fluorescence from the second optical section through the window, and outputs the fluorescence to the fluorometer configured to lead to

According to the present disclosure, the temperature of the object to be measured in the chamber can be measured without contact.

It is a figure which shows an example of a processing system. It is a schematic sectional drawing which shows an example of a processing apparatus. 1 illustrates a temperature measurement system according to one embodiment; FIG. 4 is a flowchart illustrating a temperature measurement method according to one embodiment; It is a figure which shows the temperature measurement system which concerns on a modification. It is a figure which shows the temperature measurement system which concerns on a modification. 1 is a diagram illustrating a verification system for a temperature measurement system according to an embodiment; FIG. 4 is a graph showing the relationship between the displacement of each axis and the emission intensity according to the example. 1 is a diagram illustrating a verification system for a temperature measurement system according to an embodiment; FIG. 4 is a graph showing the relationship between the displacement of each axis and the temperature of phosphor according to the example.

Various exemplary embodiments are described below.

During operation of the processing apparatus, the chamber may be in a reduced pressure (vacuum) environment, a cryogenic environment, and an environment in which plasma is applied. Patent Document 1 discloses a thermometer capable of measuring the temperature of an object to be measured in such an environment.

The fluorescent thermometer described in Patent Literature 1 measures the temperature of the measurement object by bringing a light guide extending from the fluorescence thermometer into contact with the phosphor provided on the measurement object of the processing device. . Specifically, the object to be measured is an electrostatic chuck, and the phosphor is provided on the back side of the electrostatic chuck (outside the reduced-pressure environment). The light guide guides excitation light to the phosphor and guides fluorescence emitted from the phosphor to the fluorescence thermometer on the back side of the electrostatic chuck. Thus, the fluorescent thermometer cannot measure the temperature of the phosphor unless the light guide is in contact with the phosphor. Therefore, the temperature can only be measured on members that are accessible from outside the reduced pressure environment. The present disclosure provides a temperature measurement system and temperature measurement method capable of contactlessly measuring the temperature of an object to be measured in a chamber.

A temperature measurement system according to an aspect of the present disclosure includes a light source that emits excitation light, a phosphor that is provided on an object to be measured in a chamber of a processing apparatus and that emits fluorescence when irradiated with excitation light, and an exterior of the chamber. provided inside the chamber so as to face the first optical unit across a window provided in the chamber, the first optical unit configured to emit excitation light from a light source; a second optical section configured to enter excitation light from the section through a window and emit the excitation light to the phosphor; a fluorometer configured to measure a characteristic amount of fluorescence; a temperature calculation unit configured to calculate the temperature of the measurement object based on the feature amount of fluorescence measured by the measuring device and the temperature characteristic of the feature amount obtained in advance, wherein the second optical unit is , the fluorescence from the phosphor is emitted to the first optical section through the window, the first optical section receives the fluorescence from the second optical section through the window, and outputs the fluorescence to the fluorometer configured to lead to

According to this temperature measurement system, the excitation light from the light source is emitted through the first optical section, the window of the chamber, and the second optical section to the phosphor provided on the object to be measured in the chamber. . Fluorescence is emitted from the phosphor when the phosphor is excited by the excitation light. This fluorescence is directed to the fluorometer via the second optic, the window of the chamber, and the first optic. Here, the first optical section is provided outside the chamber, and the second optical section is provided inside the chamber. That is, the excitation light and fluorescence are propagated between the first optical section and the second optical section by passing through the windows of the chamber. Therefore, the fluorometer can acquire fluorescence emitted from the phosphor without physically contacting the phosphor in the chamber. The acquired fluorescence feature amount is measured by the fluorometer. The temperature calculation unit can calculate the temperature of the measurement object provided with the phosphor based on the feature amount of the fluorescence and the temperature characteristic of the feature amount. Since the temperature calculator uses fluorescence, the temperature of the object to be measured can be calculated without being affected by the temperature inside the chamber and the environmental conditions such as the state of plasma application. Therefore, this temperature measurement system can measure the temperature of the object to be measured inside the chamber without contact.

In one embodiment, the fluorescence feature quantity may be the fluorescence quenching rate. In this case, the temperature calculator can calculate the temperature of the measurement object based on the fluorescence quenching rate, which is the time transition of the fluorescence emission intensity, and the temperature characteristic of the fluorescence quenching rate.

In one embodiment, the first optical section may have a first collimating lens and the second optical section may have a second collimating lens. In this case, the excitation light and the fluorescent light become collimated light between the first collimating lens and the second collimating lens. Therefore, since the diffusion or convergence of the excitation light and fluorescence between the first optical unit and the second optical unit is suppressed, the feature amount of the excitation light incident on the phosphor and the amount obtained by the fluorometer It is possible to suppress the fluctuation of the fluorescence feature amount that is

In one embodiment, the second optical section may be provided on a substrate that is transportable and positionable inside the chamber. In this case, the second optical section is easily transported and placed inside the chamber together with the substrate. Thus, the temperature measurement system can be easily applied to the chamber.

In one embodiment, the second optical section may have an optical member that changes the optical path of excitation light and the optical path of fluorescence. In this case, for example, even if the measurement object inside the chamber is not located on a straight line connecting the first optical unit outside the chamber and the window of the chamber, the excitation light emitted from the first optical unit is emitted toward the phosphor because its optical path is changed by the optical member. Fluorescence emitted from the fluorescent material provided on the object that is not located in the above-described linear position is also guided to the fluorometer by changing the optical path by the optical member. Therefore, this temperature measurement system can easily measure the temperature of an object to be measured provided at any position inside the chamber, not limited to the position on the straight line connecting the first optical section outside the chamber and the window of the chamber. can be measured.

In one embodiment, the phosphor may be provided on the surface layer of the object to be measured and covered with a cover member. In this case, for example, the cover member can suppress the influence on the phosphor such as damage and deterioration due to environmental conditions such as the temperature inside the chamber and the state of plasma application.

In one embodiment, the material of the cover member may be at least one of quartz, calcium fluoride, and sapphire. In this case, the cover member can suppress the effects on the phosphor such as damage and deterioration due to environmental conditions such as the temperature inside the chamber and the state of plasma application, and the cover member can be removed by utilizing the transmissive property. Attenuation of transmitted excitation light and fluorescence can be suppressed.

In one embodiment, the measurement object may be an edge ring, top electrode, substrate, cover ring or deposit shield. In this case, the temperature measurement system can calculate the temperature of the edge ring, top electrode, substrate, cover ring or deposit shield in the chamber.

In another aspect of the disclosure, a temperature measurement method is provided. The temperature measurement method includes the steps of installing a first optical unit capable of emitting excitation light outside a chamber of the processing apparatus, and carrying a second optical unit capable of emitting excitation light into the chamber of the processing apparatus. Then, the excitation light is emitted from the first optical section outside the chamber through the window of the chamber and the second optical section inside the chamber toward the phosphor provided on the object to be measured inside the chamber. measuring the feature quantity of the incident fluorescence in the steps of: entering the fluorescence emitted from the phosphor by being excited by the excitation light into the first optical unit through the second optical unit and the window; and calculating the temperature of the measurement object based on the feature amount of the fluorescence measured in the measuring step and the temperature characteristic of the feature amount.

According to this method, the second optical section is carried inside the chamber of the processing apparatus. The excitation light is emitted from the first optical section through the window of the chamber and the second optical section to the phosphor provided on the object to be measured inside the chamber. Fluorescence is emitted from the phosphor when the phosphor is excited by the excitation light. This fluorescence is incident on the first optical section through the second optical section and the window of the chamber, and the feature amount of the fluorescence is measured. Then, the temperature of the object is calculated based on the feature amount of the fluorescence and the temperature characteristic of the feature amount. This temperature measurement method can measure the temperature of the object inside the chamber without contact by the same action as the temperature measurement system described above.

Various embodiments are described in detail below with reference to the drawings. In the following description and each drawing, the same or corresponding elements are denoted by the same reference numerals, and redundant description will not be repeated. The dimensional proportions of the drawings do not necessarily match those of the description. The terms "upper", "lower", "left", and "right" are based on the illustration and are for convenience.

FIG. 1 is a diagram showing an example of a processing system. A processing system 1 shown in FIG. 1 is a system for processing an object to be processed. The object to be processed is a disk-shaped object to be processed by the processing apparatus, such as a wafer W (an example of a substrate). The workpiece may have an inclined perimeter (bevel). The wafer W may or may not have already been processed or plasma treated.

The processing system 1 includes pedestals 2a-2d, containers 4a-4d, a loader module LM, load lock chambers LL1 and LL2, process modules PM1-PM6 (an example of processing equipment), and a transfer chamber TC.

The pedestals 2a-2d are arranged along one edge of the loader module LM. Containers 4a-4d are mounted on platforms 2a-2d, respectively. Each of the containers 4a-4d is configured to receive a wafer W therein.

The loader module LM has a chamber wall defining an atmospheric transport space therein. The loader module LM has a transport device TU1 in this transport space. Transfer device TU1 is configured to transfer wafers W between containers 4a-4d and load lock chambers LL1-LL2.

Each of load lock chamber LL1 and load lock chamber LL2 is provided between loader module LM and transfer chamber TC. Each of loadlock chamber LL1 and loadlock chamber LL2 provides a pre-decompression chamber.

The transfer chamber TC is connected to the load lock chamber LL1 and the load lock chamber LL2 via gate valves. The transfer chamber TC provides a decompression chamber capable of being decompressed, and accommodates the transfer device TU2 in the decompression chamber. The transfer device TU2 is configured to transfer the wafer W between the load lock chambers LL1-LL2 and the process modules PM1-PM6 and between any two process modules among the process modules PM1-PM6.

The process modules PM1-PM6 are connected to the transfer chamber TC via gate valves. Each of the process modules PM1 to PM6 is a processing apparatus configured to perform dedicated processing such as plasma processing on the wafer W. FIG.

A series of operations when the wafer W is processed in the processing system 1 is exemplified as follows. The transfer device TU1 of the loader module LM takes out the wafer W from one of the containers 4a to 4d and transfers the wafer W to one of the loadlock chambers LL1 and LL2. One of the load lock chambers then reduces the pressure in the preliminary decompression chamber to a predetermined pressure. Next, the transfer device TU2 takes out the wafer W from one of the load lock chambers and transfers the wafer W to one of the process modules PM1 to PM6. One or more of the process modules PM1 to PM6 process the wafer W. FIG. Then, the transfer device TU2 transfers the processed wafer from the process module to one of the load lock chambers LL1 and LL2. Next, the transfer device TU1 transfers the wafer W from one of the load lock chambers to one of the containers 4a to 4d. A series of operations of the processing system 1 described above are realized by controlling each part of the processing system 1 by a control device Cnt that controls the temperature measurement system 100 described later. Details of the configuration and functions of the controller Cnt will be described later.

Next, the processing device 10, which is an example of the process modules PM1 to PM6, will be described. FIG. 2 is a schematic cross-sectional view showing an example of a processing apparatus. As shown in FIG. 2, the processing apparatus 10 includes a processing container 12 (an example of a chamber) for accommodating wafers W and processing them with plasma. The processing apparatus 10 is a capacitively coupled plasma etching apparatus and includes a substantially cylindrical processing container 12 . The inner wall surface of the processing container 12 is made of anodized aluminum. This processing container 12 is grounded for safety.

The processing container 12 defines a processing chamber S therein. The processing chamber S is configured to be evacuable. The processing chamber S is provided with a mounting table PD for mounting a wafer W and an edge ring ER, which will be described later. A substantially cylindrical support 14 made of an insulating material is provided on the bottom of the processing container 12 . The support part 14 extends vertically from the bottom of the processing container 12 inside the processing container 12 . The support portion 14 supports the mounting table PD provided inside the processing container 12 . Specifically, as shown in FIG. 2 , the support section 14 can support the mounting table PD on the inner wall surface of the support section 14 .

The mounting table PD holds the wafer W on its upper surface. A heater may be provided on the mounting table PD. The mounting table PD has a lower electrode LE and an electrostatic chuck ESC. The lower electrode LE is made of metal such as aluminum, and has a substantially disk shape. An electrostatic chuck ESC is provided on the upper surface of the lower electrode LE. An electrode (not shown) that is a conductive film is arranged on the electrostatic chuck ESC. A DC power supply 22 is electrically connected to the electrodes of the electrostatic chuck ESC. The electrostatic chuck ESC can hold the wafer W by attracting the wafer W by electrostatic force such as Coulomb force generated by the DC voltage from the DC power supply 22 .

The wafer W is placed so that its back surface is in contact with the tops of a plurality of projections provided on the surface of the electrostatic chuck ESC. A surface of the electrostatic chuck ESC is connected to a gas supply line 28 . A gas supply line 28 supplies a heat transfer gas such as He gas from a heat transfer gas supply mechanism between the front surface of the electrostatic chuck ESC and the back surface of the wafer W. As shown in FIG.

An edge ring ER is arranged on the peripheral edge of the lower electrode LE so as to surround the edge of the wafer W and the electrostatic chuck ESC. The edge ring ER is provided to improve etching uniformity. The edge ring ER is made of a material appropriately selected depending on the material of the film to be etched, and can be made of quartz, for example.

The cover ring CR is an insulator, is supported on the upper surface of the support portion 14, and extends along the outer circumference of the edge ring ER. The cover ring CR has, for example, an annular shape surrounding the edge ring ER. The material of the cover ring CR is an insulating material such as quartz or ceramic such as alumina. The cover ring CR may consist of multiple dielectric parts.

A coolant channel 24 is provided inside the lower electrode LE. The coolant channel 24 constitutes a temperature control mechanism. Refrigerant is supplied to the refrigerant channel 24 from a chiller unit provided outside through a pipe 26a. The coolant supplied to the coolant channel 24 is returned to the chiller unit via the pipe 26b. Thus, the coolant is supplied to the coolant channel 24 so as to circulate. By controlling the temperature of this coolant, the temperature of the wafer W supported by the electrostatic chuck ESC and the temperature of the edge ring ER are controlled.

The processing device 10 has an upper electrode 30 . The upper electrode 30 is disposed above the mounting table PD so as to face the mounting table PD. The lower electrode LE and the upper electrode 30 are provided substantially parallel to each other. A processing chamber S for plasma processing the wafer W is defined between the upper electrode 30 and the lower electrode LE.

The upper electrode 30 is supported above the processing container 12 via an insulating shielding member 32 . The top electrode 30 may include an electrode plate 34 and an electrode support 36 . The electrode plate 34 faces the processing chamber S and defines a plurality of gas ejection holes 34a. The electrode plate 34 is composed of silicon in one embodiment.

The electrode support 36 detachably supports the electrode plate 34 and can be made of a conductive material such as aluminum. This electrode support 36 may have a water cooling structure. A gas diffusion chamber 36 a is provided inside the electrode support 36 . A plurality of gas communication holes 36b communicating with the gas discharge holes 34a extend downward from the gas diffusion chamber 36a. Further, the electrode support 36 is formed with a gas introduction port 36c for introducing the processing gas to the gas diffusion chamber 36a, and a gas supply pipe 38 is connected to the gas introduction port 36c.

A gas source group 40 is connected to the gas supply pipe 38 via a valve group 42 and a flow controller group 44 . Gas source group 40 may include a plurality of gas sources. Flow controller group 44 may include a plurality of flow controllers. A plurality of flow controllers control the flow of gas supplied from corresponding gas sources. These flow controllers may be mass flow controllers (MFC) or flow control systems (FCS). Valve group 42 may include a plurality of valves. A plurality of gas sources are each connected to the gas supply pipe 38 via flow controllers and valves. The gas of the gas source reaches the gas diffusion chamber 36a from the gas supply pipe 38 and is discharged into the processing chamber S through the gas flow hole 36b and the gas discharge hole 34a.

Processing device 10 may further comprise a ground conductor 12a. The ground conductor 12 a has a substantially cylindrical shape and is provided to extend from the side wall of the processing container 12 above the height position of the upper electrode 30 .

Also, in the processing apparatus 10 , a deposit shield 46 is detachably provided along the inner wall of the processing container 12 . The deposit shield 46 is also provided on the outer periphery of the support portion 14 . The deposit shield 46 prevents etching by-products (depot) from adhering to the processing container 12, and can be constructed by coating an aluminum material with ceramics such as Y ₂ O ₃ .

An exhaust plate 48 is provided between the support portion 14 and the inner wall of the processing container 12 on the bottom side of the processing container 12 . The exhaust plate 48 can be constructed, for example, by coating an aluminum material with ceramics such as Y2O3. Below the exhaust plate 48, the processing container 12 is provided with an exhaust port 12e. An exhaust device 50 is connected through an exhaust pipe 52 to the exhaust port 12e. The exhaust device 50 has a vacuum pump such as a turbomolecular pump, and can decompress the inside of the processing container 12 to a desired degree of vacuum. A loading/unloading port 12g for the wafer W is provided on the side wall of the processing container 12. As shown in FIG. A loading/unloading port 12 g communicating between the inside and the outside of the processing apparatus 10 can be opened and closed by a gate valve 54 .

A conductive member (GND block) 56 is provided on the inner wall of the processing container 12 . The conductive member 56 is attached to the inner wall of the processing vessel 12 so as to be positioned at substantially the same height as the wafer W in the height direction. This conductive member 56 is DC-connected to the ground and exerts an effect of preventing abnormal discharge. Incidentally, the conductive member 56 may be provided in the plasma generation region, and its installation position is not limited to the position shown in FIG.

The processing device 10 also includes a first high frequency power supply 62 and a second high frequency power supply 64 . The first high frequency power supply 62 is a power supply that generates a first high frequency (RF: Radio Frequency) power for plasma generation, and generates high frequency power with a frequency of 27 to 100 MHz, for example, 40 MHz. A first high-frequency power supply 62 is connected to the lower electrode LE via a matching box 66 . The matching device 66 is a circuit for matching the output impedance of the first high-frequency power supply 62 and the input impedance on the load side (lower electrode LE side).

The second high-frequency power supply 64 is a power supply that generates a second high-frequency power for attracting ions into the wafer W, that is, a high-frequency bias power, and has a frequency within the range of 400 kHz to 13.56 MHz, for example 3.2 MHz. of high-frequency power. A second high-frequency power supply 64 is connected to the lower electrode LE via a matching box 68 . The matching device 68 is a circuit for matching the output impedance of the second high-frequency power supply 64 and the input impedance on the load side (lower electrode LE side).

It should be noted that the processing apparatus 10 need not have two frequencies of the first high-frequency power supply 62 and the second high-frequency power supply 64, and is provided with only one of the first high-frequency power supply 62 and the second high-frequency power supply 64. good too.

Also, the processing device 10 may further comprise a DC power supply 60 . A DC power supply 60 is connected to the upper electrode 30 . A DC power supply 60 can generate a negative DC voltage and apply the DC voltage to the upper electrode 30 . When a negative DC voltage is applied to the DC power supply 60 , positive ions existing in the processing chamber S collide with the electrode plate 34 . As a result, silicon is released from the electrode plate 34 . The released silicon may deposit on the surface of wafer W to protect the hard mask.

FIG. 3 is a diagram illustrating a temperature measurement system according to one embodiment. A temperature measurement system 100 shown in FIG. 3 is a system for calculating the temperature of an object to be measured inside the processing container 12 (chamber). The object to be measured is, for example, a component inside the processing apparatus 10 or a member transported inside the processing apparatus 10 . The measurement object is, for example, the edge ring ER, the upper electrode 30, the wafer W, the cover ring CR, or the deposit shield 46. FIG. An exemplary measurement object shown in FIG. 3 is an edge ring ER.

As shown in FIG. 3, the processing apparatus 10 is provided with a window 16 separating the inside and outside of the processing container 12 at a position different from the loading/unloading port 12g. The windows 16 are provided, for example, in the side walls of the processing vessel 12 and the side walls of the deposition shield 46 . The window 16 provided on the side wall of the processing container 12 and the window 16 provided on the side wall of the deposition shield 46 are arranged side by side in the direction along the upper surface of the wafer W. As shown in FIG. The material of the window 16 is a material having transparency to excitation light and fluorescent light, which will be described later, such as quartz glass.

The temperature measurement system 100 includes a body section 70, a first optical section 80, a second optical section 90, a phosphor 110, and a control device Cnt. The excitation light emitted from the body portion 70 is applied to the phosphor 110 through the first optical portion 80, the window 16, and the second optical portion 90, thereby exciting the phosphor 110 and emitting fluorescence. The fluorescence is obtained in the body section 70 via the second optical section 90 , the window 16 and the first optical section 80 . The feature amount of fluorescence is measured in the main unit 70, and the temperature of the measurement object provided with the phosphor 110 is calculated in the control device Cnt based on the feature amount and the temperature characteristic of the feature amount. A detailed configuration will be described below.

The body portion 70 has a light source 72 and a fluorometer 74 . A light source 72 emits excitation light. The excitation light is light that excites the phosphor 110 and causes the phosphor 110 to emit fluorescence when the phosphor 110 is irradiated with the excitation light. The light source 72 emits excitation light with its emission intensity, wavelength, irradiation time, etc. controlled by a light adjustment unit C3 of a control device Cnt, which will be described later. The light source 72 has, for example, a light emitting element and a light modulating device that modulates light emitted from the light emitting element. A light-emitting element is, for example, a laser diode. In the light source 72, light emitted from the light emitting element enters the light modulator. The optical modulator has, for example, a function of modulating the intensity or wavelength of this incident light (incident light). The optical modulation device modulates the incident light to a predetermined emission intensity or a predetermined wavelength based on the control of the light adjustment section C3, which will be described later, to generate excitation light. The light source 72 emits the excitation light for a predetermined irradiation time.

The fluorometer 74 acquires the fluorescence from the first optical section 80 and measures the feature quantity of the fluorescence. The fluorometer 74 acquires the fluorescence from the second optical section 90 received by the first optical section 80 . The fluorometer 74 measures, for example, the emission intensity of fluorescence as a feature quantity of fluorescence. The fluorometer 74 has, for example, a light receiving element such as a photodiode that measures the emission intensity of the acquired light. The fluorometer 74 measures the emission intensity of the fluorescence over time after obtaining the fluorescence, and outputs fluorescence quenching rate data, which is data indicating the relationship between time and the emission intensity of the fluorescence, to the controller Cnt. . The quenching rate refers to the degree of decrease in fluorescence emission intensity over time. The characteristics of the quenching speed will be described later.

The first optical section 80 is configured to emit excitation light emitted from the light source 72 , receive fluorescence, and guide the fluorescence to the fluorometer 74 . The first optical unit 80 is provided outside the processing device 10 . The first optical section 80 has a light guide member 82 and a first collimating lens 84 .

The light guide member 82 is configured to emit excitation light toward the first collimating lens 84 , receive fluorescence from the first collimating lens 84 , and guide the fluorescence to the fluorometer 74 . The light guide member 82 is composed of, for example, an FC (fiber channel) connector and an FC adapter. The light guide member 82 is connected to the light source 72 and the fluorometer 74 of the main body 70 by optical fiber cables. The light guide member 82 acquires the excitation light from the light source 72 via the optical fiber cable and emits it toward the first collimating lens 84 . The light guide member 82 guides the fluorescence incident from the first collimating lens 84 to the fluorometer 74 via the optical fiber cable.

The first collimating lens 84 adjusts the excitation light incident from the light guide member 82 as collimated light (parallel light) and emits it toward the second optical section 90 . The first collimator lens 84 is configured so that the collimated fluorescence emitted from the second optical section 90 is converged on the light guide member 82 . The first collimator lens 84 is arranged, for example, on a straight line connecting the light guide member 82 and the center of the window 16 in the direction in which the excitation light is emitted from the light guide member 82 .

The second optical unit 90 is provided inside the processing container 12 so as to face the first optical unit 80 with the window 16 of the processing apparatus 10 interposed therebetween. The second optical section 90 is configured to receive the excitation light from the first optical section 80 through the window 16 and emit the excitation light to the phosphor 110 . The second optical section is configured to emit fluorescence from phosphor 110 through window 16 to first optical section 80 . The second optical unit 90 is provided on a wafer W that can be transported and placed inside the processing apparatus 10 . The second optical section 90 is not physically connected to the first optical section 80 outside and inside the processing container 12 . Only excitation light and fluorescence propagate between the first optical section 80 and the second optical section 90 . The second optical section 90 has a second collimator lens 92 , an optical member 94 and a housing member 96 .

The second collimating lens 92 is provided at a position facing the first collimating lens 84 across the window 16 of the processing device 10 . The second collimating lens 92 is arranged on a straight line connecting the first collimating lens 84 and the center of the window 16 . As a result, the excitation light and the fluorescent light propagate in the direction along the upper surface of the wafer W between the first collimating lens 84 and the second collimating lens and pass through the window 16 .

The second collimating lens 92 receives excitation light from the first collimating lens 84 through the window 16 . The second collimator lens 92 is configured to convert the collimated excitation light into convergent light that is focused on the phosphor 110 provided on the object to be measured. The second collimator lens 92 emits the converged excitation light to the phosphor 110 . Also, the second collimator lens 92 adjusts the fluorescence emitted from the phosphor 110 so that it becomes a parallel beam, and emits it to the first collimator lens 84 .

The optical member 94 changes the optical path of excitation light and the optical path of fluorescence. The optical member 94 is provided, for example, downstream of the second collimator lens 92 in the optical path of the excitation light. The optical member 94 is, for example, a prism. The optical member 94 refracts and propagates the excitation light propagating along the wafer W from the second collimator lens 92 toward the edge ring ER, which is the object to be measured. The optical member 94 is, for example, a prism. The second collimator lens and optical member 94 are made of quartz glass, for example.

The accommodation member 96 accommodates the second collimating lens 92 and the optical member 94 therein and is provided on the wafer W. As shown in FIG. The housing member 96 has a leg portion 96a erected on the upper surface of the outer edge of the wafer W, and a box portion 96b for housing the second collimator lens 92 and the optical member 94 therein. The box portion 96b is provided, for example, on the leg portion 96a and extends outside the outer edge of the wafer W. As shown in FIG. The box portion 96b, for example, extends outward from the position of the wafer W to the position of the edge ring ER of the object to be measured. In order that the propagation of the excitation light and the fluorescence to the second collimating lens 92 and the optical member 94 is not hindered, at least the portion through which the excitation light and the fluorescence pass in the box part 96b is made of, for example, a transparent transparent material having transparency to the excitation light and the fluorescence. It is made up of parts. An opening may be provided instead of the transparent member at least at a portion through which the excitation light and fluorescence pass in the box portion 96b. The housing member 96 is made of ceramic, for example. Each member of the second optical unit 90 is made of a material that suppresses the influence on excitation light and fluorescence, and is made of a material that suppresses deterioration due to processing such as etching in the processing apparatus 10 . Therefore, the temperature of the object to be measured can be measured without being restricted by the configuration of the present application such as the second optical unit 90 provided in the processing apparatus 10 .

The phosphor 110 is provided on the object to be measured inside the processing device 10 and emits fluorescence when irradiated with excitation light. The phosphor 110 is provided on the measurement object by, for example, coating the surface layer of the measurement object. The phosphor 110 is provided on the surface layer of the object to be measured and covered with a cover member 112 . The cover member 112 is made of a material that is transparent to excitation light and fluorescence. The material of the cover member 112 is at least one of quartz, calcium fluoride, and sapphire. The cover member 112 is provided on the optical path of excitation light propagating from the second optical section 90 toward the phosphor 110 and on the optical path of fluorescence propagating from the phosphor 110 toward the second optical section 90 .

The object to be measured in this embodiment is the edge ring ER, and since the second optical unit 90 is provided on the wafer W and positioned above the phosphor 110, at least above the phosphor 110 is covered with the cover member 112. . The sides and the like of phosphor 110 that are not covered by cover member 112 are surrounded by part of the object to be measured. Thereby, the phosphor 110 is not exposed inside the processing container 12 . Since the cover member 112 and part of the object to be measured do not expose the phosphor 110 to the inside of the processing container 12, deterioration and Effects on the phosphor 110 such as damage can be suppressed. Note that the cover member 112 may cover the entire phosphor 110 .

The control device Cnt, for example, centrally controls each part of the processing system 1 and centrally controls the temperature measurement system 100 . The control device Cnt is, for example, physically configured as a computer system including a processor such as a CPU, a user interface, a main storage device such as a RAM and a ROM, an auxiliary storage device such as a hard disk, a communication interface, and the like. The user interface includes a keyboard or touch panel for inputting commands for the process manager to manage the processing system 1, a display for visualizing and displaying the operating status of the processing system 1, and the like. A communication interface is a data transmission/reception device such as a network card. Each function described later is implemented using the resources described above. The control device Cnt is connected to the main unit 70 .

The controller Cnt functionally includes a control unit C1, a storage unit C2, a light adjustment unit C3, an acquisition unit C4, a temperature calculation unit C5, and an output unit C6. The control unit C1 controls a series of operations of the processing system 1. FIG. The control unit C1 controls, for example, the transport process of the transport device TU2. The control unit C1 sends control signals to the flow controller group 44, the valve group 42, and the exhaust device 50 by executing the program and process recipe stored in the storage unit C2, for example. By sending the control signal, the control unit C1 performs control so that the processing gas is supplied into the processing container 12 during etching and the pressure in the processing container 12 becomes the set pressure. Further, the control unit C1 sends a control signal to the first high-frequency power supply 62, the second high-frequency power supply 64, and the DC power supply 60, and controls the magnitude of the high-frequency power of the first high-frequency power supply 62 and the second high-frequency power supply. The magnitude of the power supply 64 and the magnitude of the DC voltage of the DC power supply 60 can be controlled. Further, the control unit C1 stores various measured values and the like in the storage unit C2.

The storage unit C2 stores control programs (software) for realizing various types of processing executed by the processing apparatus 10 under the control of the control unit C1, process recipes including processing condition data, maintenance recipes, and the like. Saved. The control unit C1 calls various control programs from the storage unit C2 and executes them as necessary, such as an instruction from the user interface. Desired processing is executed in the processing device 10 under the control of the control unit C1. Further, the storage unit C2 may store monitoring results corresponding to executed process recipes (process conditions) in association with each other.

Further, the storage unit C2 stores control programs (software), data, and the like for realizing various processes executed by the temperature measurement system 100 under the control of the light adjustment unit C3 and the temperature calculation unit C5. The data is, for example, processing condition data, temperature characteristic data of fluorescence quenching speed, and the like. The light adjustment unit C3 and the temperature calculation unit C5 call various control programs from the storage unit C2 and execute them as necessary, such as an instruction from the user interface. Desired processing is performed in the temperature measurement system 100 under the control of the light adjustment section C3 and the temperature calculation section C5. Further, the storage unit C2 stores calculation data including the fluorescence quenching speed obtained by the obtaining unit C4, the temperature of the phosphor 110 calculated by the temperature calculating unit C5, and the calculated temperature of the measurement object. stored in an associated manner.

The light adjustment section C3 has a function of controlling generation of excitation light in the light source 72 . For example, as a function of adjusting the emission intensity and wavelength of the excitation light, the light adjustment unit C3 adjusts the intensity and wavelength of the light incident on the light emitting element to predetermined intensity and wavelength, respectively, based on the processing condition data stored in the storage unit C2. A light source 72 is controlled to generate excitation light modulated to a predetermined wavelength. As a function of adjusting the emission time of the excitation light, the light adjustment unit C3 controls the emission start timing and emission end timing of the excitation light in the light source 72 based on the processing condition data stored in the storage unit C2. The light adjustment section C3 controls the light source 72 to emit excitation light for a predetermined time from the start of light emission to the end of light emission so that fluorescence with sufficient intensity is measured by the fluorescence measuring device 74 .

The acquiring unit C4 acquires from the fluorometer 74 fluorescence quenching rate data, which is data indicating the relationship between the time measured by the fluorometer 74 and the emission intensity of the fluorescence. Further, the acquisition unit C4 acquires the temperature characteristic data of the extinction rate from the storage unit C2. Details of the temperature characteristic data will be described later. The acquisition unit C4 outputs the acquired fluorescence quenching speed and the temperature characteristic data of the quenching speed to the temperature calculation unit C5.

The temperature calculator C5 calculates the temperature of the object to be measured based on the emission intensity of the fluorescence measured by the fluorometer 74 and the temperature characteristics of the emission intensity. The temperature calculator C5 acquires data indicating the relationship between time and fluorescence emission intensity and temperature characteristic data from the acquirer C4.

Here, the emission intensity of the fluorescence emitted from the phosphor 110 increases as time passes. After a predetermined period of time has elapsed from the timing at which light emission starts, the fluorescence emission intensity converges to a constant value. After that, when the irradiation of the excitation light from the light source 72 ends and the light source 72 is extinguished at the light emission end timing, the fluorescence from the phosphor 110 ceases to enter, and a phenomenon called quenching occurs in which the emission intensity of the fluorescence gradually weakens. The speed of fluorescence quenching depends on the temperature of the phosphor 110 . For example, the higher the temperature of the phosphor 110, the faster the quenching speed (the decrease in fluorescence emission intensity with respect to the elapsed time after the light is turned off). That is, the higher the temperature of the phosphor, the faster the fluorescence quenching speed. The temperature characteristic data of the extinction rate that the acquisition unit C4 acquires from the storage unit C2 is, for example, data that indicates the relationship between the extinction rate and the temperature of the phosphor 110 .

The temperature calculator C5 extracts the quenching rate when the fluorescence quenching rate measured by the fluorometer 74 is less than or equal to the value obtained by multiplying the initial value of the quenching rate by a predetermined ratio. Temperature calculator C5 calculates the temperature of phosphor 110 based on the extracted extinction rate and temperature characteristic data. For example, the temperature calculator C5 reads the temperature of the phosphor 110 corresponding to the extracted quenching speed from the data, and calculates the temperature of the phosphor 110 at the time of excitation light irradiation. Since it is estimated that the phosphor 110 provided on the surface layer of the measurement object has a temperature equivalent to the temperature of the measurement object, the temperature calculation unit C5 calculates the temperature of the phosphor 110, for example, as the temperature of the measurement object. calculated as the temperature of The temperature calculator C5 outputs the calculated temperature of the object to be measured to the output unit C6.

The output unit C6 outputs the temperature of the measurement object calculated by the temperature calculation unit C5. The output unit C6 displays the temperature of the object to be measured on a display, for example. The output unit C6 causes the storage unit C2 to store the temperature of the measurement object calculated by the temperature calculation unit C5. The output unit C6 stores calculated data including, for example, the fluorescence quenching speed obtained by the obtaining unit C4, the temperature of the phosphor 110 calculated by the temperature calculating unit C5, and the calculated temperature of the measurement object. It is stored in association with the part C2. The control unit C1 may control the temperature inside the processing container 12 based on the temperature of the object to be measured calculated by the temperature calculation unit C5.

Next, a temperature measurement method, which is a temperature measurement operation of the temperature measurement system 100 and is a method of measuring the temperature of the object to be measured inside the processing container 12, will be described. FIG. 4 is a flowchart illustrating a temperature measurement method according to one embodiment. For example, the temperature measurement method is performed by the temperature measurement system 100 when the main unit 70 and the control device Cnt are provided outside the processing device 10 and the main unit 70 and the control device Cnt are powered on.

As shown in FIG. 4, the temperature measurement method starts with an installation process (S10: an example of an installation step). In the installation process ( S<b>10 ), the administrator or the like installs the first optical unit 80 outside the processing container 12 of the processing apparatus 10 . The light guide member 82 of the first optical section 80 is arranged so that the window 16 of the processing device 10 is positioned in the exit direction of the excitation light. The light guide member 82 is connected to the light source 72 and the fluorometer 74 of the main body 70 by optical fiber cables. The first collimator lens 84 is arranged, for example, on a straight line connecting the light guide member 82 and the center of the window 16 in the direction in which the excitation light is emitted from the light guide member 82 .

Subsequently, in the loading process (S12: an example of the loading step), the second optical unit 90 is placed on the outer edge of the wafer W by the administrator or the like. The transport unit TU2 transports the wafer W on which the second optical unit 90 is placed into the processing apparatus 10 through the loading/unloading port 12g with the gate valve 54 open. By arranging the transported wafer W at a predetermined position, the optical member 94 is arranged directly above the object to be measured. Also, the first collimating lens 84 of the first optical section 80, the window 16, and the second collimating lens 92 of the second optical section 90 are arranged on a straight line by the carry-in process (S12). When operating the processing apparatus 10, the gate valve 54 is closed after the wafer W and the second optical section 90 are loaded. After this carrying-in process (S12), the processing apparatus 10 may start processing in the processing container 12. FIG.

Subsequently, light source 72 irradiates excitation light toward phosphor 110 as an emission process (S14: an example of the step of emitting). The light adjustment section C3 causes the light emitting element in the light source 72 to emit light from the light emission start timing. The light adjustment unit C3 causes the light modulation device to generate excitation light by adjusting the emission intensity of the light emitted from the light emitting element by the light modulation device. The light source 72 propagates excitation light toward the light guide member 82 . The light guide member 82 emits excitation light toward the first collimator lens 84 . The first collimating lens 84 converts passing excitation light into collimated light. The excitation light that has passed through the first collimating lens 84 propagates into the processing apparatus 10 through the window 16 and is irradiated onto the second collimating lens 92 . A second collimating lens 92 converts the passing excitation light into convergent light focused on the phosphor 110 . The optical member 94 changes the direction of the optical path of the excitation light that has passed through the second collimating lens 92 from the direction toward the inside of the processing container 12 along the upper surface of the wafer W to the direction in which the edge ring ER is provided (downward). and emit it. The phosphor 110 receives the excitation light whose optical path is changed by the optical member 94 and has passed through the cover member 112 . The light adjustment unit C3 continues to generate excitation light in the light source 72 until a predetermined light emission end timing. The excitation light emitted toward phosphor 110 excites phosphor 110 to emit fluorescence.

Subsequently, the fluorometer 74 receives the fluorescence emitted by the phosphor 110 provided on the measurement object after the emission process (S14) as the light receiving process (S16: an example of the step of making the light incident). The optical member 94 changes the direction of the optical path of fluorescence from the phosphor 110 from the direction (downward) in which the edge ring ER is provided to the direction along the upper surface of the wafer W to the outside of the processing container 12 . The second collimating lens 92 converts the fluorescence whose optical path direction has been changed by the optical member 94 into collimated light, and emits the collimated light to the first collimating lens 84 . The first collimating lens 84 converts the fluorescence incident from the second collimating lens 92 through the window 16 into convergent light focused on the light guide member 82 . The light guide member 82 receives the fluorescence guided from the first collimator lens 84 and sends it to the fluorometer 74 . The fluorometer 74 continues to receive light, for example, from the timing at which the light source 72 continues to emit excitation light to the timing at which the phosphor 110 stops emitting fluorescence. The timing at which the phosphor 110 stops generating fluorescence is, for example, the timing at which the fluorescence emission intensity measured by the fluorometer 74 becomes less than a predetermined threshold. After fluorometer 74 begins receiving fluorescence, temperature measurement system 100 proceeds to the next step.

Subsequently, the fluorometer 74 measures the quenching speed of the fluorescence received by the light guide member 82 in the light receiving process (S16) as the measuring process (S18: an example of the step of measuring). The fluorometer 74 measures the fluorescence quenching speed from the timing when the fluorescence is obtained to the timing when the phosphor 110 stops generating fluorescence. After the fluorometer 74 measures the quenching rate, the temperature measurement system 100 proceeds to the next process.

Subsequently, the acquisition unit C4 acquires fluorescence quenching rate data, which is data indicating the relationship between time and fluorescence emission intensity, from the fluorometer 74 as an acquisition process (S20). Further, the acquisition unit C4 acquires the temperature characteristic data of the extinction rate from the storage unit C2. The acquisition unit C4 outputs the fluorescence quenching speed data and the temperature characteristic data of the quenching speed to the temperature calculation unit C5. After the acquisition unit C4 outputs the quenching speed from the timing when fluorescence is obtained in the fluorometer 74 to the timing when the quenching speed becomes less than the predetermined threshold to the temperature calculation unit C5, the temperature measurement system 100 proceeds to the next process. do.

Subsequently, the temperature calculator C5 performs the calculation process (S22: an example of a step of calculating), based on the fluorescence quenching rate and the temperature characteristics of the quenching rate measured in the measurement process (S18). Calculate The temperature calculator C5 extracts a quenching rate corresponding to a predetermined ratio to the initial value of the quenching rate based on the fluorescence quenching rate data acquired in the acquisition process (S20). The temperature calculator C5 calculates the temperature of the phosphor 110 based on the extracted extinction rate and the temperature characteristic data of the extinction rate acquired in the acquisition process (S20). The temperature calculator C5 calculates the calculated temperature of the phosphor 110 as the temperature of the object to be measured. The temperature calculator C5 outputs the temperature of the object to be measured to the output unit C6.

Subsequently, as an output process (S24), the output unit C6 outputs the temperature of the object to be measured calculated in the calculation process (S22) to the outside. The output unit C6 displays the temperature of the object to be measured on a display, for example. The output unit C6 stores the temperature of the object to be measured in the storage unit C2, for example.

Subsequently, as an unloading process (S26), after opening the gate valve 54, the transport unit TU2 unloads the wafer W on which the second optical unit 90 is mounted from the inside of the processing apparatus 10 to the outside of the processing apparatus 10. . When the transport device TU2 carries out the second optical unit 90 to the outside of the processing device 10, the temperature measurement system 100 ends the temperature measurement method for measuring the temperature of the object to be measured inside the processing device 10. FIG.

As described above, according to the temperature measurement system 100 and the temperature measurement method, the second optical unit 90 placed on the upper surface of the wafer W is loaded into the processing container 12 through the loading/unloading port 12g. The excitation light from the light source 72 is emitted through the first optical section 80 , the window 16 , and the second optical section to the phosphor 110 provided on the object to be measured within the processing container 12 . Fluorescence is emitted from the phosphor 110 by exciting the phosphor 110 with the excitation light. This fluorescence is guided to the fluorometer 74 via the second optical section 90 , the window 16 and the first optical section 80 . Here, the first optical unit 80 is provided outside the processing container 12 and the second optical unit 90 is provided inside the processing container 12 . That is, the excitation light and fluorescence propagate between the first optical section 80 and the second optical section 90 by passing through the window 16 . Therefore, the fluorometer 74 can acquire fluorescence emitted from the phosphor 110 without physically contacting the phosphor 110 in the processing container 12 . The fluorometer 74 measures the acquired fluorescence feature quantity. The temperature calculation unit C5 can calculate the temperature of the measurement object on which the phosphor 110 is provided, based on the feature amount of the fluorescence and the temperature characteristic of the feature amount. Since the temperature calculator C5 uses fluorescence, the temperature of the object to be measured can be calculated without being affected by environmental conditions such as the pressure, temperature, and plasma application state inside the processing chamber 12 . Therefore, the temperature measurement system 100 and the temperature measurement method can measure the temperature of the object to be measured inside the processing vessel 12 in a non-contact (remote) manner. For example, the temperature measurement system 100 and the temperature measurement method can measure the temperature of the members inside the processing vessel 12 even if the inside of the processing vessel 12 is -120° C. or more and 240° C. or less. Since the temperature measurement system 100 and the temperature measurement method are systems using fluorescence, the temperature of the measurement object can be measured without high-precision alignment.

According to the temperature measurement system 100 and the temperature measurement method, the fluorescence feature quantity measured by the fluorometer 74 is the fluorescence quenching rate. In this case, the temperature calculator C5 can calculate the temperature of the measurement object based on the fluorescence quenching speed and the temperature characteristics of the quenching speed.

According to the temperature measurement system 100 and temperature measurement method, the first optical section 80 has a first collimating lens 84 and the second optical section 90 has a second collimating lens 92 . In this case, between the first collimating lens 84 and the second collimating lens 92, the excitation light and the fluorescent light become collimated light (parallel light). Therefore, since the diffusion or convergence of the excitation light and fluorescence between the first optical unit 80 and the second optical unit 90 is suppressed, the feature amount of the excitation light incident on the phosphor 110 and the fluorometer Fluctuations in the fluorescence feature quantity acquired at 74 can be suppressed. In addition, the collimated light can enter the processing container 12 by arranging the first collimating lens 84 outside the processing container 12 . On the other hand, when the first collimating lens 84 is arranged inside the processing container 12 , dispersed light will enter the processing container 12 , so that at least part of the excitation light reaches the first collimating lens 84 appropriately. may not. Therefore, by arranging the first collimating lens 84 outside the processing container 12 as in the present embodiment, alignment restrictions are reduced compared to the case where the first collimator lens 84 is arranged inside the processing container 12, and the alignment tolerance is kept small. no longer needed.

According to the temperature measurement system 100 and the temperature measurement method, the second optical unit 90 is provided on the wafer W that can be transported and placed inside the processing container 12 . In this case, the second optical unit 90 is easily transferred and arranged inside the processing container 12 together with the wafer W. FIG. Therefore, according to this configuration, the temperature measurement system 100 and the temperature measurement method can be easily applied to the processing apparatus 10 .

According to the temperature measurement system 100 and temperature measurement method, the second optical section 90 has an optical member 94 that changes the optical path of excitation light and the optical path of fluorescence. In this case, for example, even if the object to be measured inside the processing container 12 is not on a straight line connecting the first optical section 80 outside the processing container 12 and the window 16, the optical path of the excitation light is optical. Since it is modified by member 94 , it is emitted toward phosphor 110 . Fluorescence emitted from the phosphor 110 provided on the object to be measured that is not in the above-described linear position is also guided to the fluorometer 74 by changing its optical path by the optical member 94 . Therefore, the temperature measurement system 100 is not limited to the position on the straight line connecting the first optical section 80 outside the processing container 12 and the window 16, but the measurement target provided at any position inside the processing container 12. temperature can be easily measured.

According to the temperature measurement system 100 and temperature measurement method, the phosphor 110 is provided on the surface layer of the measurement object (edge ring ER) and covered with the cover member 112 . In this case, for example, the cover member 112 can suppress the damage and deterioration of the phosphor 110 due to environmental conditions such as the pressure, temperature, and plasma application conditions inside the processing container 12 .

According to the temperature measurement system 100 and temperature measurement method, the material of the cover member 112 is at least one of quartz, calcium fluoride, and sapphire. In this case, the cover member 112 can suppress the influence on the phosphor 110 such as damage and deterioration due to environmental conditions such as the pressure, temperature, and plasma application state inside the processing container 12 . In addition, since the cover member 112 is made of a material that is transparent to the excitation light and the fluorescence, the excitation light and the fluorescence that pass through the cover member 112 can be prevented from attenuating and can reach the phosphor 110 . .

According to the temperature measurement system 100 and temperature measurement method, the measurement objects are the edge ring ER, the upper electrode 30, the wafer W, the cover ring CR, or the deposit shield 46. FIG. In this case, the temperature measurement system 100 and temperature measurement method can calculate the temperature of the edge ring ER, the upper electrode 30, the wafer W, the cover ring CR, or the deposition shield 46 in the processing container 12 . The object to be measured is not limited to a member that can be accessed from outside the reduced-pressure environment within the processing container 12 , and may be any member within the processing container 12 .

Note that the above-described embodiment shows an example of the temperature measurement system 100 and the temperature measurement method, and the apparatus and method according to the embodiment may be modified or applied to other things.

For example, the fluorescence feature amount measured by the fluorometer 74 may not be the fluorescence quenching rate. As an example, the feature amount of fluorescence may be the wavelength near the absorption edge of fluorescence or the peak wavelength of fluorescence. In this case, since the wavelength near the absorption edge of fluorescence or the peak wavelength of fluorescence changes with temperature, the temperature calculator C5 calculates the initial wavelength measured by the fluorometer 74 and the wavelength measured after a predetermined time. The amount of wavelength change, which is the difference between , is calculated. The storage unit C2 stores data indicating the relationship between the amount of wavelength change and the temperature of the object to be measured, and the acquisition unit C4 acquires the data. The temperature calculator C5 converts the wavelength change amount into the temperature of the measurement object based on the wavelength change amount and the previously acquired relationship between the wavelength change amount and the measurement object temperature.

As an example, the feature amount of fluorescence may be the amount of light. In this case, two different wavelength transmission filters are provided in the fluorometer 74 according to the emission intensity of the fluorescence, and the amount of light transmitted through the two wavelength transmission filters is measured. As the wavelength of fluorescence changes with temperature, the amount of light also changes. The temperature calculator C5 calculates the ratio of the amount of light measured after a predetermined time to the initial amount of light measured by the fluorometer 74 . The storage unit C2 stores data indicating the relationship between the light amount ratio and the temperature of the object to be measured, and the acquisition unit C4 acquires the data. The temperature calculator C5 converts the light amount ratio into the temperature of the measurement object based on the light amount ratio and the previously acquired relationship between the light amount ratio and the measurement object temperature.

The second optical unit 90 does not have to be provided on the wafer W. In this case, for example, the second optical unit 90 may be provided on an edge ring ER that can be transported and arranged inside the processing container 12 .

The first collimating lens 84 may not be provided outside the processing container 12 as the first optical section 80 . In this case, the first collimating lens 84 may be provided near the window 16 as the second optical section 90 .

The effect of thermal conductivity on the phosphor 110 and the object to be measured is large. may occur. In this case, temperature calculator C<b>5 may calculate the temperature of the object to be measured, which is different from the temperature of phosphor 110 , based on the calculated temperature of phosphor 110 . For example, the acquisition unit C4 obtains data indicating the relationship between the temperature of the phosphor 110 provided on the measurement target and the temperature of the measurement target as the temperature conversion data between the phosphor 110 and the measurement target from the storage unit C2. to get The temperature calculation unit C5 reads the temperature of the measurement object corresponding to the calculated temperature of the phosphor 110 from the temperature conversion data acquired by the acquisition unit C4, and calculates the temperature of the measurement object during excitation light irradiation. . Further, when data indicating the relationship between the fluorescence lifetime and the temperature of the object to be measured is stored as the temperature characteristic data in the storage unit C2, the temperature calculation unit C5 calculates the temperature of the phosphor 110 without calculating the temperature. The temperature of the object to be measured may be directly calculated from the fluorescence lifetime using the characteristic data.

In the temperature measurement method, the temperature of the object to be measured may be measured multiple times after the carrying-in process (S12). In this case, the temperature measurement system 100 may repeat the processes from the emission process (S14) to the output process (S24) for a predetermined number of times or time. The temperature measurement system 100 may perform the unloading process (S26) after measuring the temperature of the object to be measured a predetermined number of times or for a period of time.

Next, a temperature measurement system 100A, which is a modification of the system for measuring the temperature of the object to be measured, will be described. FIG. 5 is a diagram showing a temperature measurement system according to a modification. The upper electrode 30 is a temperature measurement target in the temperature measurement system 100A. The phosphor 110A is provided, for example, on the surface layer of the upper electrode 30 that is positioned directly above the edge ring ER and exposed inside the processing container 12, and is covered with a cover member 112A below. In the second optical section 90A of the temperature measurement system 100A, the second collimating lens 92A is configured to convert the excitation light propagating from the first collimating lens 84 into converging light focused on the phosphor 110A. The optical member 94A is, for example, a prism. At least a portion of the housing member 96A through which the excitation light and the fluorescence pass is made of, for example, a transparent member having transparency to the excitation light and the fluorescence. Other configurations of the temperature measurement system 100A are the same as other configurations of the temperature measurement system 100, for example.

Next, a temperature measurement method using the temperature measurement system 100A will be described. The temperature measurement method, like the temperature measurement method using the temperature measurement system 100, starts with the installation process (S10). In the emission process (S14), the optical member 94A directs the optical path of the excitation light that has passed through the second collimating lens 92A from the direction toward the inside of the processing container 12 along the upper surface of the wafer W, and the upper electrode 30 is provided. Change the direction (upward) in which the light is being emitted. The phosphor 110A provided on the upper electrode 30 receives the excitation light having its optical path changed by the optical member 94A and transmitted through the cover member 112A. In the light receiving process (S16), the optical member 94A directs the direction of the optical path of the fluorescence from the phosphor 110A to the outside of the processing container 12 along the upper surface of the wafer W from the direction (downward) in which the edge ring ER is provided. change direction to The second collimator lens 92A converts the fluorescence whose optical path direction has been changed by the optical member 94A into parallel rays, and emits the collimated rays to the first collimator lens 84 . Other processing of the temperature measurement method using the temperature measurement system 100A is the same as other processing of the temperature measurement method using the temperature measurement system 100A.

Thus, even when the measurement object is the upper electrode 30, the temperature of the upper electrode 30 can be measured by the temperature measurement system 100A and the temperature measurement method by appropriately arranging the optical member 94A in the temperature measurement system 100A. Non-contact measurement is possible.

Next, a temperature measurement system 100B, which is a modification of the system for measuring the temperature of the object to be measured, will be described. FIG. 6 is a diagram schematically showing a temperature measurement system according to a modification. The temperature measurement object in the temperature measurement system 100B is the deposit shield 46 . The phosphor 110B is positioned, for example, between the upper electrode 30 and the wafer W in the vertical direction, is provided on the surface layer of the deposition shield 46 exposed inside the processing container 12, and is covered with a cover member 112B on the sides thereof. will be Phosphor 110B is provided at a position symmetrical to window 16 with respect to wafer W, for example. In the second optical section 90B of the temperature measurement system 100B, the second collimating lens 92B is configured to convert the excitation light propagating from the first collimating lens 84 into converging light focused on the phosphor 110B. The second optical section 90B does not have the optical member 94B. The housing member 96B is provided on the wafer W in the vicinity of the deposit shield 46 . At least a portion of the housing member 96B through which the excitation light and the fluorescence pass is made of, for example, a transparent member having transparency to the excitation light and the fluorescence. Other configurations of temperature measurement system 100B are the same as other configurations of temperature measurement system 100, for example.

Next, a temperature measurement method using the temperature measurement system 100B will be described. The temperature measurement method, like the temperature measurement method using the temperature measurement system 100, starts with the installation process (S10). In the extraction process ( S<b>14 ), the excitation light incident from the first collimating lens 84 into the processing container 12 propagates above the wafer W in a direction along the upper surface of the wafer W. The second collimating lens 92B converts the excitation light propagating from the first collimating lens 84 into convergent light focused on the phosphor 110B. The phosphor 110B receives the excitation light that has passed through the cover member 112B from the second collimator lens 92B without changing the optical path. In the light receiving process ( S<b>16 ), the second collimator lens 92</b>B converts the incident fluorescence from the phosphor 110</b>B into parallel rays without changing the optical path, and emits the collimated rays to the first collimator lens 84 . Other processing of the temperature measurement method using temperature measurement system 100B is the same as other processing of the temperature measurement method using temperature measurement system 100B.

As described above, even when the object to be measured is the deposit shield 46, the second collimator lens 92B is appropriately arranged and the optical member 94B is not provided, so that the temperature measurement system 100B and the temperature measurement method can be used to measure the deposit shield. 46 temperature can be measured without contact. Further, by adjusting the thickness of the second collimating lens 92, the presence/absence of the optical member 94, the orientation of the slope, and the location of the housing member 96, the temperature of each member inside the processing container 12 can be measured without contact. can be done.

From the foregoing description, it will be appreciated that various modifications may be made to the disclosed embodiments without departing from the scope and spirit of the present disclosure. Therefore, the various embodiments disclosed herein are not intended to be limiting, with a true scope and spirit being indicated by the following claims.

(Example 1)
Emission of excitation light propagated through the first collimator lens 84 and the second collimator lens 92 when the position of the first optical section 80 relative to the second optical section 90 is displaced and the excitation light is emitted from the light guide member 82 An example of strength verification will be described. This example makes it possible to verify how much the displacement of the first optical section 80 with respect to the second optical section 90 affects the emission intensity of the excitation light.

FIG. 7 is a diagram showing a verification system for a temperature measurement system according to an embodiment. As shown in FIG. 7, in the verification system 201 according to the first embodiment, the excitation light emitted from the light source 72 and emitted by the light guide member 82 is caused to pass through the first optical section 80 and the second optical section 90 in this order. , was received by the light receiving member 86 . The light guide member 82 is an FC connector and is connected to the light source 72 with an optical fiber cable. The first collimating lens 84 and the second collimating lens 92 each had a focal length of 30 mm and a diameter of 20 mm. The light-receiving member 86 is an FC connector having the same light-receiving function as the light-guiding member 82, and was connected to the excitation light measuring device 76 by an optical fiber cable. The diameter of the fiber core of the optical fiber cable connected to the light guide member 82 and the light receiving member 86 was 1 mm. The excitation light measuring device 76 measured the emission intensity of the excitation light received from the light receiving member 86 . The excitation light measuring device 76 is a power meter.

A coordinate system was set with the position of the light guide member 82 when the emission intensity of the excitation light in the excitation light measuring device 76 was maximized as the origin. The axis extending in the traveling direction of the excitation light is defined as the X-axis, the axis extending in the vertical direction of the light guide member 82 on a plane perpendicular to the X-axis is defined as the Z-axis, and the coordinate axis perpendicular to the X-axis and the Z-axis is defined as the Y-axis. The positions of the light guide member 82 and the first collimating lens 84 were displaced by 1 mm with respect to the second collimating lens 92 on the X, Y, and Z axes, and the emission intensity was measured by the excitation light measuring device 76 . The relative positions of the light guide member 82 and the first collimating lens 84 were fixed. The X-axis displacement indicates the displacement of the excitation light in the optical axis direction, and the Y-axis displacement and Z-axis displacement indicate the displacement in the direction perpendicular to the optical axis and the inclination displacement of the optical axis. The control device Cnt acquires the emission intensity of the excitation light measured by the excitation light measuring device 76 and outputs the average value of the emission intensity for each installation position of the first optical unit 80 .

FIG. 8 is a graph showing the relationship between the displacement of each axis and the emission intensity of excitation light according to the example. FIG. 8(a) is a graph showing the relationship between the X-axis displacement and the emission intensity of the excitation light according to the example. FIG. 8(b) is a graph showing the relationship between the Y-axis displacement, the Z-axis displacement, and the emission intensity of the excitation light according to the example. As shown in each figure of FIG. 8, the horizontal axis of the graph is the displacement (mm) from the origin, and the vertical axis of the graph is the emission intensity of the excitation light when the first optical unit 80 is installed at the origin position. It is the ratio of the emission intensity of the excitation light for each installation position of the first optical unit 80 . Even when the displacement was 10 mm from the origin in both the positive and negative directions of the X axis, the emission intensity of the excitation light maintained a value of 95% or more of the emission intensity measured at the origin position. The luminescence intensity of the excitation light became weaker than the luminescence intensity measured at the origin position as the displacement from the origin in both the positive and negative directions of the Y-axis and the Z-axis increased. Even when displaced 3 mm from the origin in both the positive and negative directions of the Y-axis and Z-axis, the emission intensity of the excitation light maintained a value of 80% or more of the emission intensity measured at the origin position. . Even when displaced 1 mm from the origin in both the positive and negative directions of the Y-axis and Z-axis, the emission intensity of the excitation light maintained a value of 95% or more of the emission intensity measured at the origin position. .

By the way, when the wafer W is loaded into the processing container 12 by the transfer unit TU2, the positional error of the wafer W in the processing container 12 is about 1 mm. From this, it is considered that a relative error in the position of the first optical unit 80 with respect to the second optical unit 90 installed on the wafer W can occur by about 1 mm. Even if there is a shift of about 1 mm in any of the X, Y, and Z axes, the phosphor 110 can be irradiated with excitation light that maintains 95% or more of the emission intensity. Therefore, even if the first optical unit 80 and the second optical unit 90 are not physically connected between the outside and the inside of the processing container 12, the temperature measurement system 100 can appropriately measure the emission intensity of the excitation light. It is conceivable that the light can be maintained and irradiated toward the phosphor 110 .

(Example 2)
Verification of the temperature of the phosphor 110 calculated based on the fluorescence propagated from the phosphor 110 when the excitation light is emitted from the light guide member 82 by displacing the position of the first optical unit 80 with respect to the second optical unit 90 An example will be described. This embodiment makes it possible to verify how much the displacement of the first optical unit 80 with respect to the second optical unit 90 affects the temperature of the phosphor 110, which is necessary for calculating the temperature of the object to be measured. can.

FIG. 9 is a diagram illustrating a verification system for a temperature measurement system according to an embodiment; As shown in FIG. 9, in the verification system 202 according to the second embodiment, the excitation light emitted from the light source 72 and emitted by the light guide member 82 is passed through the first optical section 80 and the second optical section 90, Light was received by the incident/emissive member 88 . The light guide member 82 is an FC connector and is connected to the light source 72 and the fluorometer 74 by optical fiber cables. The first collimating lens 84 and the second collimating lens 92 each had a focal length of 30 mm and a diameter of 20 mm. The input/output member 88 is an FC connector having the same light receiving function and output function as the light guide member 82, and is connected to an optical fiber cable. The optical fiber cable guides the excitation light to the phosphor 110 and guides the fluorescence emitted by the excitation of the phosphor 110 to the entrance/exit member 88 . The diameter of the fiber core of the optical fiber cable connected to the light guide member 82 and the input/output member 88 was 1 mm. The fluorescence emitted by the incidence/emission member 88 was passed through the second collimator lens 92 of the second optical section 90 and the first collimator lens 84 of the first optical section 80 in this order, and received by the light guide member 82 . The fluorometer 74 measured the quenching speed of fluorescence received from the light guide member 82 . The fluorometer 74 is a power meter.

A coordinate system was set with the position of the light guide member 82 when the signal intensity of the fluorescence in the fluorometer 74 was maximized as the origin. The axis extending in the traveling direction of the excitation light is defined as the X-axis, the axis extending in the vertical direction of the light guide member 82 on a plane perpendicular to the X-axis is defined as the Z-axis, and the coordinate axis perpendicular to the X-axis and the Z-axis is defined as the Y-axis. The positions of the light guide member 82 and the first collimator lens 84 were displaced by 1 mm with respect to the second collimator lens 92 on the X-, Y-, and Z-axes, and the fluorescence extinction speed was measured with the fluorometer 74 . The relative positions of the light guide member 82 and the first collimating lens 84 were fixed. The X-axis displacement indicates the displacement of the excitation light in the optical axis direction, and the Y-axis displacement and Z-axis displacement indicate the displacement in the direction perpendicular to the optical axis and the inclination displacement of the optical axis.

The controller Cnt acquires the fluorescence quenching speed measured by the fluorometer 74 and calculates the temperature of the phosphor 110 based on the quenching speed. The fluorometer 74 measured the fluorescence quenching speed multiple times for each installation position of the first optical unit 80, and the controller Cnt calculated the temperature of the phosphor 110 for each quenching speed. The controller Cnt outputs the average value of the temperature of the phosphor 110 and the temperature stability index for each installation position of the first optical unit 80 . A temperature stability index is an index that evaluates variations in each measurement. The controller Cnt calculated the standard knitting difference σ from the temperature of the phosphor 110 calculated multiple times, and calculated the value of 3σ as the temperature stability index. A smaller value of 3σ indicates a smaller variation in the temperature of the phosphor 110 from measurement to measurement.

FIG. 10 is a graph showing the relationship between the displacement of each axis and the temperature of the phosphor according to the example. (a) of FIG. 10 is a graph showing the relationship between the displacement of each axis and the average temperature of the phosphor according to the example. As shown in (a) of FIG. 10 , the horizontal axis of the graph is the displacement (mm) from the origin, and the vertical axis of the graph is the average value (° C.) of the temperature of the phosphor 110 . Even when the origin is displaced by 5 mm in both the positive and negative directions of the X axis, the average temperature of the phosphor 110 does not exceed the average temperature measured at the origin position by more than 0.1°C. I didn't. Even when the origin is displaced by 2.5 mm in both the positive and negative directions of the Y-axis and Z-axis, the average temperature of phosphor 110 is 1° C. higher than the average temperature measured at the origin position. No excess variation occurred. When the origin is displaced by 1 mm in both the positive and negative directions of the Y axis and the Z axis, the average temperature of the phosphor 110 varies by more than 0.5° C. with respect to the average temperature measured at the origin position. I didn't.

(b) of FIG. 10 is a graph showing the relationship between the displacement of each axis and the temperature stability index of the phosphor according to the example. As shown in (b) of FIG. 10 , the horizontal axis of the graph is the deviation (mm) from the origin, and the vertical axis of the graph is the temperature stability index (° C.) of the phosphor 110 . Even when displaced from the origin by 5 mm in both the positive and negative directions of the X axis, the temperature stability index of phosphor 110 is less than 0.4° C., which is 0 relative to the temperature stability index measured at the origin position. Fluctuations of more than 0.1°C did not occur. Even when displaced from the origin by 2.5 mm in both the positive and negative directions of the Y-axis and Z-axis, the temperature stability index of the phosphor 110 is less than 0.6 ° C., which is the temperature stability measured at the origin position. No change of more than 0.3° C. was observed for the sex index.

From the results described above, it was suggested that the displacement of the first optical section 80 with respect to the second optical section 90 in the X direction has little effect on the temperature measurement of the phosphor 110 if it is at least 5 mm or less. It was suggested that the displacement of the first optical unit 80 with respect to the second optical unit 90 in the Y and Z directions has little effect on the temperature measurement of the phosphor 110 if it is at least 2.5 mm or less. By the way, as described above, in the temperature measurement system 100, the positional error of the first optical section 80 relative to the second optical section 90 installed on the wafer W can be considered to be about 1 mm. As described above, even if there is a deviation of about 1 mm in any of the X-, Y-, and Z-axes, the temperature measurement of the phosphor 110 is little affected. Therefore, even if the first optical unit 80 and the second optical unit 90 are not physically connected between the outside and the inside of the processing container 12, the temperature measurement system 100 can appropriately measure the temperature of the phosphor 110. It is considered that it can be measured.

1... Processing system. DESCRIPTION OF SYMBOLS 10... Processing apparatus 12... Processing container (an example of a chamber) 12g... Carry-in/out port 16... Window 30... Upper electrode 46... Depot shield 54... Gate valve 70... Main body 72... Light source 74... Fluorometer 80 First optical section 82 Light guide member 84 First collimator lens 90, 90A, 90B Second optical section 92, 92A, 92B Second collimator lens 94, 94A, 94B... Optical member 96, 96A, 96B... Housing member 100, 100A, 100B... Temperature measurement system 110, 110A, 110B... Phosphor, 112, 112A, 112B... Cover member, 201, 202... Verification system, C1 ... control section, C2 ... storage section, C3 ... light adjustment section, C4 ... acquisition section, C5 ... temperature calculation section, C6 ... output section, Cnt ... control device, CR ... covering, ER ... edge ring, PM1 to PM6 ... Process module (an example of a processing apparatus), S... processing chamber, TU1, TU2... transfer apparatus, W... wafer (an example of a substrate).

Claims (9)

a light source that emits excitation light;
a phosphor that is provided on an object to be measured in a chamber of a processing apparatus and that emits fluorescence when irradiated with the excitation light;
a first optical unit provided outside the chamber and configured to emit the excitation light from the light source;
provided inside the chamber so as to face the first optical section across a window provided in the chamber, the excitation light is incident from the first optical section through the window, and the excitation light a second optical section configured to emit to the phosphor;
a fluorometer configured to measure the fluorescence feature quantity;
a temperature calculation unit configured to calculate the temperature of the measurement object based on the feature amount of the fluorescence measured by the fluorometer and the temperature characteristics of the feature amount obtained in advance;
with
The second optical section is configured to emit the fluorescence from the phosphor through the window to the first optical section, and the first optical section transmits the fluorescence from the second optical section to the window. and configured to direct the fluorescence to the fluorometer.
temperature measurement system. The temperature measurement system according to claim 1, wherein the fluorescence feature amount is a fluorescence quenching rate. The first optical section has a first collimating lens,
The second optical section has a second collimating lens,
A temperature measurement system according to claim 1 or 2. The temperature measurement system according to any one of claims 1 to 3, wherein the second optical section is provided on a substrate that can be transported and placed inside the chamber. The temperature measurement system according to any one of claims 1 to 4, wherein the second optical section has an optical member that changes an optical path of the excitation light and an optical path of the fluorescence. The temperature measurement system according to any one of claims 1 to 5, wherein the phosphor is provided on a surface layer of the object to be measured and covered with a cover member. 7. The temperature measurement system according to claim 6, wherein the material of said cover member is at least one of quartz, calcium fluoride and sapphire. The temperature measurement system according to any one of claims 1 to 7, wherein the measurement object is an edge ring, upper electrode, substrate, cover ring or deposit shield. installing a first optical unit capable of emitting excitation light to the outside of the chamber of the processing apparatus;
a step of carrying a second optical unit capable of emitting the excitation light into the interior of the chamber;
The excitation light is emitted from the first optical section through the window of the chamber and the second optical section inside the chamber toward a phosphor provided on a measurement object inside the chamber. a step;
causing fluorescence emitted from the phosphor by being excited by the excitation light to enter the first optical section through the second optical section and the window;
measuring a feature quantity of the fluorescence incident in the incident step;
calculating the temperature of the measurement object based on the feature quantity of the fluorescence measured in the measuring step and the temperature characteristic of the feature quantity;
A method of measuring temperature, including

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