JP2023022192A - SiC device and method for manufacturing SiC device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a SiC device and a method for manufacturing the same that can measure the total thickness of the epitaxial layer and the thickness of the drift layer.

SOLUTION: A SiC device has a SiC substrate and a SiC epitaxial layer stacked on the SiC substrate. The SiC epitaxial layer has a first layer, a second layer, and a third layer in order from the SiC substrate side. The nitrogen concentration of the SiC substrate is not less than 6.0×10¹⁸ cm^-3 and not more than 1.5×10¹⁹ cm^-3. The nitrogen concentration of the first layer is not less than 1.0×10¹⁷ cm^-3 and not more than 1.5×10¹⁸ cm^-3. The nitrogen concentration of the second layer is not less than 1.0×10¹⁸ cm^-3 and not more than 5.0×10¹⁸ cm^-3. The nitrogen concentration of the third layer is not less than 5.0×10¹³ cm^-3 and not more than 1.0×10¹⁷ cm^-3.

SELECTED DRAWING: Figure 1

COPYRIGHT: (C)2023,JPO&INPIT

Description

The present invention relates to a SiC device and a method for manufacturing the SiC device.

Silicon carbide (SiC) has a dielectric breakdown field one order of magnitude larger, a bandgap three times larger, and a thermal conductivity about three times higher than those of silicon (Si). Silicon carbide (SiC) is expected to be applied to power devices, high frequency devices, high temperature operation devices and the like.

Establishment of high-quality SiC epitaxial wafers and high-quality epitaxial growth techniques is required for promotion of practical use of SiC devices.

SiC devices are formed on SiC epitaxial wafers. A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate. The SiC substrate is obtained by processing a SiC bulk single crystal grown by a sublimation recrystallization method or the like. The epitaxial layer is fabricated by chemical vapor deposition (CVD) or the like, and becomes the active region of the device.

In SiC epitaxial wafers, basal plane dislocations (BPDs) are known as one of device killer defects that cause fatal defects in SiC devices. For example, when a forward current is applied to a bipolar device, the stacking fault expands from the BPD as a starting point and becomes a high-resistance stacking fault. The high resistance created in the device reduces the reliability of the device. BPDs have the property of expanding while forming stacking faults when minority carriers recombine in their vicinity.

For example, Patent Literatures 1 to 3 describe forming a buffer layer containing an impurity concentration as high as or higher than that of the substrate between the SiC substrate and the semiconductor layer in which the device is formed. . The buffer layer suppresses expansion of the BPD to form a stacking fault.

Japanese Patent No. 6627938 Japanese Patent No. 6351874 Japanese Patent No. 5687422

The film thickness of the epitaxial layer is important information in the fabrication of SiC devices. If the measured film thickness and the actual film thickness of the epitaxial layer are different, it may cause troubles in the process. The thickness of the epitaxial layer can be measured, for example, by Fourier transform infrared spectroscopy (FT-IR). FT-IR measures the film thickness by Fourier transform from interference waveforms of surface reflection and interface reflection. If there are multiple interfaces, multiple interference waveforms will result. If the interference waveforms overlap each other, the desired interference waveform cannot be separated and the desired film thickness cannot be measured. For example, if a buffer layer containing a high concentration of impurities is formed between the SiC substrate and the semiconductor layer in which the device is formed, the total thickness of the epitaxial layers may not be accurately measured.

The present invention has been made in view of the above problems, and an object thereof is to obtain a SiC epitaxial wafer and a method for manufacturing the same that can measure the total thickness of the epitaxial layers and the thickness of the drift layer.

In order to solve the above problems, the present invention provides the following means.

(1) A SiC epitaxial wafer according to a first aspect includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layers are a first layer and a second layer in order from the SiC substrate side. and a third layer, the SiC substrate has a nitrogen concentration of 6.0×10 ¹⁸ cm ⁻³ or more and 1.5×10 ¹⁹ cm ⁻³ or less, and the nitrogen concentration of the first layer is 1 0×10 ¹⁷ cm ⁻³ or more and 1.5×10 ¹⁸ cm ⁻³ or less, and the nitrogen concentration of the second layer is 1.0×10 ¹⁸ cm ⁻³ or more and 5.0×10 ¹⁸ cm ⁻³ and the nitrogen concentration of the third layer is 5.0×10 ¹³ cm ⁻³ or more and 1.0×10 ¹⁷ cm ⁻³ or less.

(2) In the SiC epitaxial wafer according to the aspect described above, the film thickness of the second layer may be 2.0 μm or more.

(3) In the SiC epitaxial wafer according to the aspect described above, the film thickness of the first layer may be 0.2 μm or more and 2.0 μm or less.

(4) A method for manufacturing a SiC epitaxial wafer according to the second aspect includes a SiC substrate having a nitrogen concentration of 6.0×10 ¹⁸ cm ⁻³ or more and 1.5×10 ¹⁹ cm ^{−3 or} less, and a nitrogen concentration of 1. laminating a first layer having a concentration ^of 0×10 ¹⁷ cm ⁻³ or more and 1.5×10 ¹⁸ cm ^{−3 or} less; laminating a second layer ^{having a} concentration of 0×10 ¹⁸ cm ^{−3 or} less ^; and laminating a third layer.

In the SiC epitaxial wafer according to the above aspect, the total thickness of the epitaxial layers and the thickness of the drift layer can be measured.

1 is a cross-sectional view of a SiC epitaxial wafer according to a first embodiment; FIG. FIG. 2 is a diagram showing the principle of FT-IR measurement; It is an FT-IR measurement result when the nitrogen concentration of each layer was not controlled (comparative example). 4 is a schematic diagram of film thickness measurement locations on the SiC epitaxial wafer in Example 1. FIG.

Hereinafter, this embodiment will be described in detail with appropriate reference to the drawings. In the drawings used in the following description, there are cases where characteristic portions are enlarged for convenience in order to make it easier to understand the features of the present invention, and the dimensional ratios of each component may differ from the actual ones. be. The materials, dimensions, and the like exemplified in the following description are examples, and the present invention is not limited to them, and can be modified as appropriate without changing the gist of the invention.

FIG. 1 is a cross-sectional view of a SiC epitaxial wafer 100 according to the first embodiment. SiC epitaxial wafer 100 has SiC substrate 10 and epitaxial layer 20 .

SiC substrate 10 is, for example, cut from an SiC ingot. A SiC ingot is grown on a SiC seed crystal using, for example, a sublimation method. For the SiC substrate 10, for example, a plane having an offset angle in the <11-20> direction from (0001) is used as a growth plane.

SiC substrate 10 is doped with impurities. Impurities are, for example, nitrogen. The nitrogen concentration of SiC substrate 10 is 6.0×10 ¹⁸ cm ⁻³ or more and 1.5×10 ¹⁹ cm ⁻³ or less. The nitrogen concentration of SiC substrate 10 is preferably 6.5×10 ¹⁸ cm ⁻³ or more. The in-plane uniformity of the doping concentration is preferably within 30%, more preferably 20% or less. The planar view size of the SiC substrate 10 is, for example, 6 inches or more.

Epitaxial layer 20 is laminated on SiC substrate 10 . The epitaxial layer 20 is formed by chemical vapor deposition (CVD), for example.

The epitaxial layer 20 has a first layer 21, a second layer 22 and a third layer 23, for example. The epitaxial layer 20 is laminated on the SiC substrate 10 in the order of a first layer 21 , a second layer 22 and a third layer 23 . Each of the first layer 21, the second layer 22, and the third layer 23 is classified according to the nitrogen concentration. Each of the first layer 21, the second layer 22, and the third layer 23 may consist of a plurality of layers.

First layer 21 is between SiC substrate 10 and second layer 22 . The first layer 21 is laminated on the SiC substrate 10 . The first layer 21 is an n-type or p-type semiconductor.

The first layer 21 has a lower nitrogen concentration than the SiC substrate 10 and a lower nitrogen concentration than the second layer 22 . The nitrogen concentration of the first layer 21 is 1.0×10 ¹⁷ cm ⁻³ or more and 1.5×10 ¹⁸ cm ⁻³ or less. The nitrogen concentration of the first layer 21 is, for example, preferably 0.3 times or less, and more preferably 0.2 times or less, that of the SiC substrate 10 . The in-plane uniformity of the doping concentration of the first layer 21 is preferably within 50%, more preferably 30% or less.

The film thickness of the first layer 21 is, for example, 0.2 μm or more and 2.0 μm or less, preferably 0.2 μm or more and less than 1.2 μm. In FT-IR, the interference waveform accompanying the interface reflection between the SiC substrate 10 and the first layer 21 and the interference waveform accompanying the interface reflection between the first layer 21 and the second layer 22 tend to overlap. With the SiC epitaxial wafer 100 according to this embodiment, even when the film thickness of the first layer 21 is thin, overlapping of interference waveforms can be suppressed, and the total thickness of the epitaxial layer 20 can be accurately measured.

The first layer 21 converts the BPD into TED (threading edge dislocation) at the interface between the first layer 21 and the SiC substrate 10 , so that the BPD in the SiC substrate 10 is inherited in the epitaxial layer 20 . Suppress.

A second layer 22 is between the first layer 21 and the third layer 23 . The second layer 22 is laminated on the first layer 21 .

The second layer 22 has a higher nitrogen concentration than the first layer 21 . The second layer 22 is an n-type semiconductor layer called a high concentration layer. Second layer 22 prevents carriers in epitaxial layer 20 from reaching SiC substrate 10 . When the carriers reach the SiC substrate 10 and recombine near the BPD in the SiC substrate 10, stacking faults originating from the BPD expand, increasing device resistance and reducing reliability.

The nitrogen concentration of the second layer 22 is 1.0×10 ¹⁸ cm ⁻³ or more and 5.0×10 ¹⁸ cm ⁻³ or less, preferably 1.0×10 ¹⁸ cm ⁻³ or more and 3.5×10 ^{18 .} cm ⁻³ or less. The nitrogen concentration of the second layer 22 is, for example, preferably 10 times or less, more preferably 5 times or less than the nitrogen concentration of the first layer 21 . The in-plane uniformity of the doping concentration is preferably within 50%, more preferably 30% or less.

The film thickness of the second layer 22 is, for example, 2.0 μm or more, preferably 10 μm or less. If the film thickness of the second layer 22 is sufficiently thick, carriers in the epitaxial layer 20 can be further suppressed from reaching the SiC substrate 10 . If the second layer 22 is too thick, the throughput will increase, causing an increase in the cost of the SiC epitaxial wafer 100 .

A third layer 23 is laminated on the second layer 22 . The third layer 23 is a layer through which a drift current flows and functions as a device. The third layer 23 is called a drift layer. Drift current is the current caused by carrier flow when a voltage is applied to a semiconductor.

The third layer 23 contains impurities. Impurities are, for example, nitrogen. The nitrogen concentration of the third layer 23 is 5.0×10 ¹³ cm ⁻³ or more and 1.0×10 ¹⁷ cm ⁻³ or less, preferably 1.0×10 ¹⁴ cm ⁻³ or more and 1.0×10 ^{17 .} cm ⁻³ or less. The nitrogen concentration of the third layer 23 is, for example, preferably 0.1 times or less, more preferably 0.02 times or less, that of the second layer 22 . The in-plane uniformity of the doping concentration is preferably within 20%, more preferably 10% or less.

The film thickness of the third layer 22 is, for example, 5 μm or more.

The nitrogen concentration of each layer can be measured by a mercury probe (Hg-CV) method, secondary ion mass spectrometry (SIMS), or the like.

The Hg-CV method measures the difference (N _d -N _a ) between the donor concentration N _d and the acceptor concentration N _a as the n-type impurity concentration. If the acceptor concentration is sufficiently smaller than the donor concentration, the concentration difference between them can be regarded as the n-type impurity concentration.

Secondary ion mass spectrometry (SIMS) is a method of mass spectrometry of secondary ions ejected while scraping a layer in the thickness direction. Doping concentration can be measured from mass spectrometry.

Any point may be used as the measurement point of the nitrogen concentration as long as the distribution in the wafer plane can be reflected. It is preferable not to include the measurement points less than 5 mm from the edge of the wafer. For example, measurement is performed at a plurality of points in a cross direction with the center of the wafer as the origin. For example, measurements are made at a total of 21 points, 5 points arranged at regular intervals in each of the four directions of the cross centering on the origin. The above nitrogen concentration is the average value of the concentrations measured at each point. The concentration at each measurement point does not greatly deviate from the average value, and at least one of the measurement points satisfies the nitrogen concentration range described above. The in-plane uniformity is a value obtained by subtracting the minimum value from the maximum value of the in-plane measurement values and dividing the result by the average value of the in-plane measurement values.

Next, a method for manufacturing the SiC epitaxial wafer 100 according to the first embodiment will be described. SiC epitaxial wafer 100 has steps of preparing SiC substrate 10 and stacking first layer 21 , second layer 22 and third layer 23 on SiC substrate 10 in this order.

First, SiC substrate 10 is prepared. A method for manufacturing the SiC substrate 10 is not particularly limited. For example, it can be obtained by slicing a SiC ingot obtained by a sublimation method or the like. For example, the SiC substrate 10 is sliced so that the main surface thereof has an offset angle of 0.4° or more and 5° or less with respect to the (0001) plane. The SiC substrate 10 is selected to have a surface area of 6.0×10 ¹⁸ cm ⁻³ or more and 1.5×10 ¹⁹ cm ⁻³ or less.

The SiC substrate 10 has BPDs along the (0001) plane (c-plane). The number of BPDs exposed on the growth surface of the SiC substrate 10 is preferably as small as possible, but is not particularly limited. For example, the number of BPDs existing on the surface (growth surface) of a 6-inch SiC substrate is about 500 to 5000 per 1 cm ² .

Next, a first layer 21 is deposited on the SiC substrate 10 . The film formation of the first layer 21 is carried out on the SiC substrate 10 by circulating the raw material gas and the dopant gas by the chemical vapor deposition method. The raw material gas is divided into a Si-based raw material gas containing Si in its molecule and a C-based raw material gas containing C in its molecule. A dopant gas is, for example, nitrogen gas.

The nitrogen concentration of the first layer 21 is set to 1.0×10 ¹⁷ cm ⁻³ or more and 1.5×10 ¹⁸ cm ⁻³ or less. The nitrogen concentration of the first layer 21 is controlled by adjusting the C/Si ratio and dopant gas concentration. The C/Si ratio is the molar ratio of C atoms in the C-based source gas to Si atoms in the Si-based source gas.

Next, a second layer 22 is deposited on the first layer 21 . The nitrogen concentration of the second layer 22 is set to 1.0×10 ¹⁸ cm ⁻³ or more and 5.0×10 ¹⁸ cm ⁻³ or less. Next, a third layer 23 is deposited on the second layer 22 . The nitrogen concentration of the third layer 23 is set to 5.0×10 ¹³ cm ⁻³ or more and 1.0×10 ¹⁷ cm ⁻³ or less. The second layer 22 and the third layer 23 can be deposited by the same method as the first layer 21 .

The SiC epitaxial wafer 100 according to the first embodiment can measure the total thickness of the epitaxial layer 20 and the thickness of the third layer 23 . The total thickness of the epitaxial layer 20 and the thickness of the third layer 23 can be measured by FT-IR.

FIG. 2 is a diagram showing the principle of FT-IR measurement. The SiC epitaxial wafer 100 has an interface S1 between the SiC substrate 10 and the first layer 21, an interface S2 between the first layer 21 and the second layer 22, and an interface S2 between the second layer 22 and the third layer 23. There is S3. An interface reflection R1 occurs at the interface S1, an interface reflection R2 occurs at the interface S2, and an interface reflection R3 occurs at the interface S3. FT-IR measures the film thickness by Fourier transform from interference waveforms of surface reflection and interface reflection R1, R2, R3.

FIG. 3 shows the FT-IR measurement results when the nitrogen concentration of each layer was not controlled (comparative example). The left peak in FIG. 3 originates from interface reflection R3. The right peak in FIG. 3 originates from interface reflection R1 and interface reflection R2. As shown in FIG. 3, the peak derived from the interface reflection R1 and the peak derived from the interface reflection R2 are mixed and cannot be separated. Therefore, the total thickness of the epitaxial layer 20 and the total thickness of the second layer 22 and the third layer 23 cannot be determined separately from the FT-IR measurement results.

In contrast, in the SiC epitaxial wafer 100 according to the first embodiment, the refractive index of each layer is controlled by controlling the nitrogen concentration of each layer. Therefore, the interface reflection R2 can be prevented from occurring in the FT-IR measurement result, and the influence of the interface reflection R2 can be removed from the right peak in FIG. Therefore, the total thickness of the epitaxial layer 20 can be measured from the peak derived from the interface reflection R1. Also, the thickness of the third layer 23 can be simultaneously measured from the peak derived from the interface reflection R3.

Although the preferred embodiments of the present invention have been described in detail above, the present invention is not limited to specific embodiments, and various can be transformed or changed.

(Example 1)
A SiC substrate having a nitrogen concentration in the range of 6.0×10 ¹⁸ cm ⁻³ or more and 1.5×10 ¹⁹ cm ⁻³ or less was prepared. The size of the SiC substrate was 6 inches. A first layer, a second layer, and a third layer were sequentially laminated as epitaxial layers on the SiC substrate. The nitrogen concentration of the first layer was set to 1.0×10 ¹⁸ cm ⁻³ . The nitrogen concentration of the second layer was set to 3.5×10 ¹⁸ cm ⁻³ . The nitrogen concentration of the third layer was set to 1.0×10 ¹⁶ cm ^-3 .

FIG. 4 is a schematic diagram of film thickness measurement locations on the SiC epitaxial wafer in Example 1. FIG. As shown in FIG. 4, the thickness of the epitaxial layer was measured by FT-IR at each of nine measurement points p1 to p9.

(Comparative example 1)
Comparative Example 1 differs from Example 1 only in that the nitrogen concentration of the second layer is set to 6.5×10 ¹⁸ cm ⁻³ . Under the same other conditions as in Example 1, the film thickness of the epitaxial layer was measured by FT-IR at each of nine measuring points p1 to p9.

In Example 1 and Comparative Example 1, the measured total thickness of the epitaxial layer was different. Comparing with the approximate set film thickness calculated from the growth rate, the total thickness of the epitaxial layers of Example 1 is thought to be correct. Comparing the in-plane average values, the average total thickness of the epitaxial layers measured in Comparative Example 1 differed from the average total thickness of the epitaxial layers measured in Example 1 by 0.2 μm. In Comparative Example 1, as shown in FIG. 3, the peak derived from the interface reflection R1 and the peak derived from the interface reflection R2 were mixed.

(Example 2)
A SiC substrate was cut from a SiC ingot having a nitrogen concentration of about 7.0×10 ¹⁸ cm ⁻³ . A first layer, a second layer, and a third layer were sequentially laminated as epitaxial layers on the SiC substrate. The nitrogen concentration of the first layer was set to 1.0×10 ¹⁸ cm ⁻³ . The nitrogen concentration of the second layer was set to 3.7×10 ¹⁸ cm ⁻³ . The nitrogen concentration of the third layer was set to 1.0×10 ¹⁶ cm ^-3 . Then, the total thickness of the epitaxial layer at the measuring point p1 was measured by FT-IR.

(Example 3)
Example 3 differs from Example 2 in that a SiC substrate is cut from an SiC ingot having a nitrogen concentration of about 7.5×10 ¹⁸ cm ⁻³ . Six SiC substrates were taken out, and an epitaxial layer was formed on each SiC substrate. The configuration of each epitaxial layer was the same as in Example 2. Then, the total thickness of the epitaxial layer at the measuring point p1 was measured by FT-IR.

(Example 4)
Example 4 differs from Example 2 in that the SiC substrate is cut from another SiC ingot having a nitrogen concentration of about 6.5×10 ¹⁸ cm ⁻³ . An epitaxial layer was deposited on the SiC substrate. The configuration of the epitaxial layer was the same as in Example 2. Then, the total thickness of the epitaxial layer at the measuring point p1 was measured by FT-IR.

(Comparative example 2)
Comparative Example 2 differs from Example 2 in that a SiC substrate is cut from an SiC ingot having a nitrogen concentration of approximately 5.7×10 ¹⁸ cm ⁻³ . Two SiC substrates were taken out, and an epitaxial layer was formed on each SiC substrate. The configuration of each epitaxial layer was the same as in Example 2. Then, the total thickness of the epitaxial layer at the measuring point p1 was measured by FT-IR.

(Comparative Example 3)
Comparative Example 3 is different from Example 2 in that a SiC substrate is cut from an SiC ingot having a nitrogen concentration of about 5.5×10 ¹⁸ cm ⁻³ . Four SiC substrates were taken out, and an epitaxial layer was formed on each SiC substrate. The configuration of each epitaxial layer was the same as in Example 2. Then, the total thickness of the epitaxial layer at the measuring point p1 was measured by FT-IR.

The film thickness measurement results of Examples 2 to 4 and Comparative Examples 2 and 3 are summarized in Table 1 below. Table 1 shows the difference between the set film thickness and the measured film thickness. The difference between the set film thickness and the measured film thickness is obtained by the following relational expression. The set film thickness is calculated from the film formation conditions and the growth rate.
(“Measured film thickness” - “Set film thickness”) / “Set film thickness” x 100 (%)

As shown in Table 1, in Examples 2 to 4 in which the SiC substrate had a nitrogen concentration of 6.0×10 ¹⁸ cm ⁻³ or more, the difference between the set film thickness and the measured film thickness was about 1%. On the other hand, in Comparative Examples 2 and 3 in which the nitrogen concentration was less than 6.0×10 ¹⁸ cm ⁻³ , there was a difference of 2% or more between the set film thickness and the measured film thickness. In Comparative Examples 2 and 3, the total thickness of the epitaxial layer was measured to be thin. In Comparative Examples 2 and 3, as shown in FIG. 3, it is considered that the peak derived from the interface reflection R1 and the peak derived from the interface reflection R2 were mixed.

REFERENCE SIGNS LIST 10 SiC substrate 20 epitaxial layer 21 first layer 22 second layer 23 third layer 100 SiC epitaxial layer S1, S2, S3 interface R1, R2, R3 interface reflection

Claims (9)

A SiC substrate and a SiC epitaxial layer laminated on the SiC substrate,
The SiC epitaxial layer has a first layer, a second layer, and a third layer in order from the SiC substrate side,
the SiC substrate has a nitrogen concentration of 6.0×10 ¹⁸ cm ⁻³ or more and 1.5×10 ¹⁹ cm ⁻³ or less;
the first layer has a nitrogen concentration of 1.0×10 ¹⁷ cm ⁻³ or more and 1.5×10 ¹⁸ cm ⁻³ or less;
the second layer has a nitrogen concentration of 1.0×10 ¹⁸ cm ⁻³ or more and 5.0×10 ¹⁸ cm ⁻³ or less;
The SiC device, wherein the third layer has a nitrogen concentration of 5.0×10 ¹³ cm ⁻³ or more and 1.0×10 ¹⁷ cm ^{−3 or} less. The SiC device according to claim 1, wherein the film thickness of said second layer is 2.0 µm or more. 2. The SiC device according to claim 1, wherein said first layer has a film thickness of 0.2 [mu]m or more and 2.0 [mu]m or less. 3. The SiC device according to claim 2, wherein said first layer has a film thickness of 0.2 [mu]m or more and 2.0 [mu]m or less. The SiC device according to any one of claims 1 to 4, wherein said SiC device is a power device. The SiC device according to any one of claims 1 to 4, wherein said SiC device is a high frequency device. The SiC device according to any one of claims 1 to 4, wherein said SiC device is a high temperature operation device. The SiC device according to any one of claims 1 to 4, wherein said SiC device is a bipolar device. A step of fabricating a SiC device using a SiC epitaxial wafer in which a SiC epitaxial layer is formed on a SiC substrate;
The SiC epitaxial layer has a first layer, a second layer, and a third layer in order from the SiC substrate side,
the SiC substrate has a nitrogen concentration of 6.0×10 ¹⁸ cm ⁻³ or more and 1.5×10 ¹⁹ cm ⁻³ or less;
the first layer has a nitrogen concentration of 1.0×10 ¹⁷ cm ⁻³ or more and 1.5×10 ¹⁸ cm ⁻³ or less;
the second layer has a nitrogen concentration of 1.0×10 ¹⁸ cm ⁻³ or more and 5.0×10 ¹⁸ cm ⁻³ or less;
A method for manufacturing a SiC device, wherein the nitrogen concentration of the third layer is 5.0×10 ¹³ cm ⁻³ or more and 1.0×10 ¹⁷ cm ⁻³ or less.

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