JP2023021741A - Pellicle for EUV lithography - Google Patents

Abstract

To provide a pellicle for EUV lithography that prevents the peeling of a pellicle film even at high temperature, for example, 500°C or higher.SOLUTION: A pellicle includes: a frame having an opening; a pellicle film that is stretched and supported on one end side of the frame so as to cover the opening; and a pellicle film adhesive layer for fixing the pellicle film to the frame. The pellicle is used in EUV lithography. The pellicle film adhesive layer has a linear expansion coefficient of more than 0 and 20×10-6/K or less.SELECTED DRAWING: Figure 1

Description

The present invention relates to a pellicle for EUV lithography.

2. Description of the Related Art In the manufacturing process of semiconductor devices such as large-scale integrated circuits (LSI) and VLSI, liquid crystal display panels, etc., patterning is performed by irradiating a photosensitive layer or the like with light through a mask (also called an exposure original plate or reticle). At that time, if foreign matter adheres to the mask, the light is absorbed by the foreign matter, or the light is reflected and bent on the surface of the foreign matter. As a result, the pattern to be formed is deformed, its edges are rough, and the dimension, quality, appearance, etc. after patterning are impaired.

In order to solve such a problem, a method is adopted in which a pellicle having a pellicle film that transmits light is mounted on the surface of the mask to suppress adhesion of foreign matter. A pellicle generally consists of a frame (pellicle frame), a pellicle film that is a transparent thin film arranged on one side of the frame, a pellicle film adhesive layer that fixes the pellicle film to the frame, and the other side of the frame ( a mask adhesive layer for being attached to a photomask, disposed on the side of the pellicle frame opposite to the pellicle film (for example, Patent Document 1).

The wavelength of light used for lithography is becoming shorter, and the use of EUV (Extreme Ultra Violet) light is being considered as a next-generation lithography technology. EUV light refers to light with a wavelength in the soft X-ray region or the vacuum ultraviolet region, and specifically refers to a light beam of about 13.5 nm±0.3 nm.

EUV light is easily absorbed by all substances. If the pellicle film absorbs the EUV light, it may not only cause exposure failure, but may also damage the pellicle film due to heat generated by the energy of the EUV light.

JP 2019-113857 A

For example, in EUV exposure, the pellicle film absorbs light and the temperature of the pellicle film rises to 500° C. or higher. In an EUV exposure environment with a high temperature of 500° C. or higher, the heat is transferred to the pellicle film adhesive layer, and the pellicle film peels off due to deformation or peeling of the pellicle film adhesive layer. rice field.

The present invention has been proposed in view of such conventional circumstances, and an object of the present invention is to provide a pellicle in which peeling of the pellicle film is suppressed even at high temperatures such as 500° C. or higher in EUV lithography. to provide.

[1]
A pellicle comprising a frame having an opening, a pellicle membrane stretched and supported on one side of the frame so as to cover the opening, and a pellicle membrane adhesive layer for bonding the pellicle membrane to the frame. and
A pellicle for use in EUV lithography, wherein the linear expansion coefficient of the pellicle film adhesive layer is more than 0 and 20×10 ⁻⁶ /K or less.
[2]
The pellicle according to [1], wherein the linear expansion coefficient of the pellicle film adhesive layer is more than 0 and 15×10 ⁻⁶ /K or less.
[3]
The pellicle according to [1] or [2], wherein the pellicle film adhesive layer contains an inorganic adhesive.
[4]
The pellicle according to [3], wherein the inorganic adhesive contains at least one material selected from the group consisting of zirconia, alumina and silica.
[5]
[1], wherein a ratio of linear expansion coefficients of the frame and the pellicle film adhesive layer (linear expansion coefficient of the frame/linear expansion coefficient of the pellicle film adhesive layer) is 0.4 to 2.0; The pellicle according to any one of [4].
[6]
The pellicle according to any one of [1] to [4], wherein the linear expansion coefficient of the pellicle film adhesive layer is equal to or greater than the linear expansion coefficient of the frame.
[7]
The pellicle according to any one of [1] to [6], wherein the pellicle film adhesive layer has a thickness of 0.8 mm to 2.5 mm.
[8]
The pellicle according to any one of [1] to [7], wherein the pellicle film includes a carbon film.
[9]
The pellicle according to any one of [1] to [8], wherein the frame contains at least one selected from the group consisting of titanium, titanium alloys and carbon materials.
[10]
A pellicle membrane adhesive disposed between a frame and a pellicle membrane in a pellicle,
The pellicle film adhesive is provided in a pellicle used for EUV lithography, and has a linear expansion coefficient of more than 0 and 20×10 ⁻⁶ /K or less.
[11]
A photomask with a pellicle, comprising a photomask to which the pellicle according to any one of [1] to [9] is attached.
[12]
A method for manufacturing a semiconductor device, comprising a step of exposing with the photomask with a pellicle according to [11].
[13]
A method for manufacturing a liquid crystal display panel, comprising a step of exposing with the photomask with a pellicle according to [11].

According to the present invention, it is possible to provide a pellicle in which peeling of the pellicle film is suppressed even at high temperatures such as 500° C. or higher.

It is a figure which shows one structural example of a pellicle.

EMBODIMENT OF THE INVENTION Hereinafter, the form (it abbreviates as "embodiment" hereafter) for implementing this invention is demonstrated, referring drawings. The present invention is not limited to the following embodiments, and various modifications can be made within the scope of the gist of the present invention.

An outline of the pellicle according to the present embodiment will be described. FIG. 1(a) is a top view showing the pellicle 1, and FIG. 1(b) is a vertical sectional view.
In the following description, the upper side in each drawing is referred to as "upper" and the lower side as "lower".

In this specification, EUV light refers to light with a wavelength of 5 nm or more and 30 nm or less. The wavelength of EUV light is preferably 5 nm or more and 14 nm or less, and specifically, EUV light refers to light of about 13.5 nm±0.3 nm.

[pellicle]
The pellicle 1 is a structure that protects a photomask from dust in photolithography or the like. The pellicle 1 includes a frame 2 , a pellicle membrane 3 , a pellicle membrane adhesive layer 4 , a mask adhesive layer 5 and a release film 6 .
The pellicle 1 of this embodiment is used for EUV lithography, and is characterized in that the linear expansion coefficient of the pellicle film adhesive layer 4 is more than 0 and 20×10 ⁻⁶ /K or less.

<Frame>
The frame 2 (pellicle frame) can have any shape that allows the pellicle membrane 3 to be stretched over the frame 2. For example, when the frame 2 is viewed from the front, it has a rectangular, polygonal, circular, or elliptical shape. etc. A square is a square, a rectangle, etc., and can have both square corners and a substantially square shape with rounded corners (FIG. 1). Polygons are triangles, trapezoids, parallelograms, pentagons, hexagons, and the like.

The size of the frame 2 and its opening can be determined according to the size of the photomask. When the frame 2 has a rectangular shape with a pair of long sides and a pair of short sides when viewed from the front, the length of the long side is 80 mm to 300 mm, the length of the short side is 50 mm to 250 mm, and the length of the long side and the short side is 80 mm to 300 mm. The width of the sides can be 1.0 mm to 20.0 mm each and/or the height of the frame can be 0.5 mm to 8.0 mm.

As shown in FIG. 1, the frame 2 has edges. The rim can have a linearly extending rod-like rim member. A pair of edge members can be spaced apart and parallel to each other, and likewise the other pair of edge members can be spaced apart and parallel to each other. The two contacting edge members can be connected at their ends so as to be substantially perpendicular to each other.

Materials constituting the frame 2 include, for example, aluminum; aluminum alloys (eg, 5000 series, 6000 series, 7000 series, etc.); titanium; titanium alloys (eg, Ti—Al—V, Ti—V—Cr—Sn—Al, etc. ); iron and steel; stainless steel; magnesium alloy; ceramics (eg SiC, AlN, Al ₂ O _{3 etc.} ) _; engineering plastics such as PE, PA, PC, PEEK; fiber composite materials such as GFRP, CFRP; carbon materials; or combinations thereof. Among them, titanium, titanium alloys and carbon materials are preferable.

Titanium and titanium alloys are preferable because they have a small coefficient of linear thermal expansion, so deformation due to high temperatures is small, and expansion and contraction of the frame due to heat can be suppressed. Although the type is not particularly limited, for example, titanium, titanium alloys such as Ti--V--Al alloys and Ti--V--Cr--Sn--Al alloys, Ti--Nb compounds and Ti--Mo compounds are preferable.
A carbon material has excellent heat resistance and high strength. Therefore, by forming the frame 2 from a carbon material, deformation of the frame 2 and wrinkling of the pellicle film 3 can be prevented even at high temperatures in EUV lithography. can be suppressed with certainty.

Examples of the carbon material include, but are not particularly limited to, graphite (graphite), carbon nanotubes, carbon fibers, glassy carbon, etc. Among them, graphite, glassy carbon, or carbon nanotubes are preferred.

The frame 2 may be provided with ventilation holes. By providing the ventilation holes, the pressure difference between the inside and outside of the closed space formed by the pellicle 1 and the photomask can be eliminated, and the pellicle film 3 can be prevented from swelling or denting. Moreover, it is preferable to attach a filter for removing dust to the ventilation hole. By doing so, it is possible to prevent foreign matter from entering the closed space between the pellicle 1 and the photomask through the ventilation hole.

If necessary, the inner peripheral surface or the entire surface of the frame 2 is coated with an adhesive (for example, acrylic, vinyl acetate, silicone, rubber adhesive, etc.) or grease (for example, silicone) for capturing foreign matter. system, fluorine-based grease, etc.) may be applied.
In addition, the frame 2 may be provided with a jig hole or the like for attaching the pellicle 1 to the photomask, if necessary.

<Pellicle film>
The pellicle film 3 is a transparent thin film. The pellicle film 3 has a thickness of 10 μm or less and is formed so as to sufficiently transmit light emitted from a light source in photolithography.

Materials constituting the pellicle film 3 are not particularly limited, but examples thereof include nitrocellulose, cellulose derivatives, fluoropolymers, carbon materials, silicon, silicon compounds, etc. Among them, carbon materials are preferable.

The pellicle film 3 is preferably a carbon film containing carbon or a carbon structure obtained by heating a compound containing carbon atoms.

The carbon film is formed by, for example, a step of laminating a film containing carbon atoms on the substrate (step I), a step of heating the film laminated on the substrate at 800 to 1400° C. in a nitrogen atmosphere to form a carbon film (step II), It is produced including the step (III) of peeling the carbon film from the substrate.

In (Step I), the compound containing carbon atoms is not particularly limited as long as it is carbonized by heating, and is preferably an organic material.

As the compound containing carbon atoms, polyimide compounds, polybenzoxazine compounds, polyacrylonitrile compounds, polyisocyanate compounds, polyamide compounds, heteroaromatic compounds, polyphenylene resins, polyether resins, liquid crystal polymer resins, polyparaxylyl It is one or more selected from the group consisting of ren resins, phenol resins, epoxy resins and furan resins.
The compound containing carbon atoms is more preferably one or more selected from the group consisting of polyimide compounds and polybenzoxazine compounds.

The substrate is not particularly limited as long as it has a melting point higher than 800 to 1400° C., which is the heating temperature for forming the carbon film. For example, silicon whose surface layer contains silicon dioxide (SiO ₂ ). A substrate (hereinafter also referred to as a Si substrate) is preferred. By manufacturing a carbon film on a Si substrate, it is possible to manufacture a carbon film excellent in in-plane film thickness uniformity without breaking the film.

As a method for forming carbon or a compound containing carbon atoms into a film, known techniques can be applied, and as a method for forming carbon into a film on a substrate, an arc plasma deposition method (also referred to as an APD method) is preferable. A preferred method for forming a film of a compound containing carbon atoms on a substrate is spin coating. According to these methods, a carbon film having excellent in-plane film thickness uniformity can be produced.

In (Step II), the heating temperature is 800 to 1400°C, preferably 900 to 1300°C, more preferably 1000 to 1200°C. Heating can be performed using a heat treatment furnace or the like.

The heating time is preferably 1 minute to 10 hours, more preferably 10 minutes to 3 hours, still more preferably 30 minutes to 2 hours, from the viewpoint of sufficiently converting carbon atoms into a turbostratic carbon structure. is.

In (Step III), the specific method in the step of peeling the carbon film from the substrate is not particularly limited. A step of forming a support film; a step of removing the substrate by hydrofluoric acid treatment or the like; a step of attaching a support frame to the periphery of the carbon film of the structure composed of the carbon film and the support film; removing the support film by etching or the like. A method including the step;

The thickness of the carbon film forming the pellicle film 3 is preferably less than 1500 nm. The thickness of the carbon film is the thickness of the film as used in its normal sense. The upper limit of the thickness of the carbon film is more preferably 1200 nm or less, still more preferably 1000 nm or less, and even more preferably 500 nm or less.
By setting the thickness of the carbon film to be less than 1500 nm, it is possible to obtain a carbon film free from cracks during production.
Moreover, the lower limit of the thickness of the carbon film is not particularly limited as long as it is larger than 0 nm.

The thickness of the carbon film can be controlled, for example, by adjusting the thickness of the film containing carbon atoms when laminating the film containing carbon atoms on the substrate in the method of manufacturing the pellicle film.

<Pellicle film adhesive layer>
As shown in FIG. 1B, the pellicle film 3 is adhered and fixed to one end side of the frame 2 by the pellicle film adhesive layer 4 to cover the frame 2 .

The pellicle 1 of the present invention is characterized in that the linear expansion coefficient (thermal linear expansion coefficient) of the pellicle film adhesive layer 4 is more than 0 and 20×10 ⁻⁶ /K or less.
By setting the coefficient of linear expansion of the pellicle film adhesive layer 4 to 20×10 ⁻⁶ /K or less, the pellicle film adhesive layer 4 can be prevented from being deformed or peeled off even at high temperatures. It is possible to suppress the peeling of.

In this specification, catalog values, for example, can be used as linear expansion coefficients (thermal linear expansion coefficients) of the pellicle film adhesive layer 4 and the frame 2 .

The linear expansion coefficient of the pellicle film adhesive layer 4 is more than 0 and 20×10 ⁻⁶ /K or less, preferably more than 0 and 15×10 ⁻⁶ /K or less, and more than 0 and 10×10 ⁻⁶ /K. The following are more preferable.

Inorganic adhesives are examples of such adhesives having a coefficient of linear expansion of 20×10 ⁻⁶ /K or less. Here, the inorganic adhesive means an adhesive in which a thermosetting inorganic compound is dispersed in a water-based dispersion medium.

The pellicle film adhesive layer 4 preferably contains an inorganic adhesive. The inorganic adhesive contains, for example, at least one material selected from the group consisting of zirconia, alumina and silica.
Inorganic adhesives include colloidal inorganic oxides and inorganic polymers. Colloidal inorganic oxides include colloidal silica and colloidal alumina. Examples of inorganic polymers include polyphosphoric acid compounds, polyaluminic acid compounds, polysiloxane compounds, and zirconia compounds.

Specific examples of such inorganic adhesives include SUMICERAM (registered trademark) S-10A, S-18D, and S-30A (manufactured by Asahi Chemical Industry Co., Ltd.) and Aron Ceramics D ( Toagosei Co., Ltd.) and Ceramabond 835M, 569 (Odic Co., Ltd.) and other commercially available products can be used.

The ratio of the linear expansion coefficients of the frame 2 and the pellicle film adhesive layer 4 (linear expansion coefficient of the frame 2/linear expansion coefficient of the pellicle film adhesive layer 4) is preferably 0.4 to 2.0. 0.6 to 1.5 is more preferred. More preferably, the coefficient of linear expansion of the pellicle film adhesive layer 4 is equal to or greater than the coefficient of linear expansion of the frame 2 (that is, the ratio is 1.0 or less).
By making the linear expansion coefficients of the frame 2 and the pellicle film adhesive layer 4 similar, the deformation and peeling of the pellicle film adhesive layer 4 due to the difference in the linear expansion coefficient at high temperatures can be more effectively prevented. In addition, peeling of the pellicle film 3 can be suppressed more effectively.

The thickness of the pellicle film adhesive layer 4 is, for example, preferably 0.8 mm to 2.5 mm, more preferably 1.0 mm to 2.0 mm. As a result, it is possible to suppress the amount of deformation of the pellicle film adhesive layer 4 as a whole when the temperature rises, while ensuring sufficient adhesion to the frame 2 .

<Mask adhesive layer>
As shown in FIG. 1B, a mask adhesive layer 5 for attaching the pellicle 1 to a photomask is arranged on the other end side of the frame 2 (the side opposite to the pellicle film 3 of the frame 2). .

The mask adhesive layer 5 contains an adhesive such as acrylic, rubber, vinyl, epoxy, or silicone, and more preferable constituent materials are acrylic, rubber, silicone, or the like. The thickness of the mask adhesive layer 5 is preferably, for example, 0.2 mm to 2.5 mm.

<Release film>
A release film 6 (liner) is arranged so as to cover the mask adhesive layer 5 . This release film 6 protects the mask adhesive layer 5 when not in use, and is peeled off from the mask adhesive layer 5 when the pellicle 1 is used.

As the release film 6, a film such as polyester having a thickness of about 30 to 200 μm is generally used. In addition, if the peeling force when peeling off the release film 6 from the mask adhesive layer 5 is large, the mask adhesive layer 5 may be deformed during peeling. Release treatment such as silicone or fluorine may be performed on the surface.

In the pellicle 1 of this embodiment having such a configuration, the linear expansion coefficient of the pellicle film adhesive layer 4 exceeds 0 and is 20×10 ⁻⁶ /K or less. Deformation and peeling of the agent layer 4 are suppressed, thereby suppressing peeling of the pellicle film. Therefore, the pellicle 1 of this embodiment has excellent structural stability and is suitable as a pellicle for EUV lithography.

The present invention also provides a pellicle membrane adhesive. That is, the pellicle film adhesive is a pellicle film adhesive arranged between the frame and the pellicle film in the pellicle, and the pellicle film adhesive is provided on the pellicle used for EUV lithography and has a linear expansion coefficient is more than 0 and 20×10 ⁻⁶ /K or less.
With such a pellicle film adhesive, deformation is suppressed even at high temperatures.

The present invention also provides a photomask with a pellicle, wherein the photomask is equipped with a pellicle as described above.
In such a photomask with a pellicle, peeling of the pellicle film is suppressed even at a high temperature of, for example, 500° C. or higher in EUV lithography.

The present invention also provides a semiconductor device manufacturing method including a step of exposing with a photomask with a pellicle.
In such a method for manufacturing a semiconductor device, in EUV lithography, the peeling of the pellicle film is suppressed even at a high temperature of, for example, 500° C. or higher. It is possible to manufacture a semiconductor device with

The present invention also provides a method of manufacturing a liquid crystal display panel, which includes a step of exposing with a photomask with a pellicle.
In such a method for manufacturing a liquid crystal display panel, peeling of the pellicle film is suppressed even at a high temperature of, for example, 500° C. or higher in EUV lithography. An excellent liquid crystal display panel can be manufactured.

Although the embodiment of the present invention has been described above, the present invention is not limited to this, and can be modified as appropriate without departing from the gist of the invention.

EXAMPLES Next, the present invention will be described more specifically with reference to examples and comparative examples. However, the present invention is not limited to the following examples without departing from the gist thereof.

[Fabrication of pellicle]
<Example 1>
(1) Preparation of adhesive-attached frame Prepare a pellicle frame made of glass-like carbon with an outer diameter of 149 mm x 115 mm x height of 3 mm and a width of 2 mm. body.

(2) Preparation of carbon film Polyimide precursor (BPDA-ODA) synthesized from 3,3′,4,4′-biphenyltetracarboxylic dianhydride (BDPA) and 4,4′-diaminodiphenyl ether (ODA) was dissolved in N-methylpyrrolidone and applied onto the Si substrate by spin coating. It was imidized on the substrate in a nitrogen atmosphere at 300° C. for 1 hour to form a polyimide film having a thickness of 400 nm.

Subsequently, this substrate was placed in a heat treatment furnace and carbonized by heating at 1100° C. for 1 hour under N ₂ flow to obtain a carbon film with a thickness of 200 nm.

Thereafter, an acetone solution containing 15 wt % polymethyl methacrylate resin (PMMA) was spin-coated on the substrate at 500 rpm to form a support film. The substrate was immersed in a 40 wt % hydrogen fluoride aqueous solution, and after the PMMA-coated carbon film was peeled off from the substrate, it was washed with water. Then, the PMMA-coated carbon film was immersed in an acetone:isopropyl alcohol=1:1 (weight ratio) solution to dissolve the PMMA, and then the carbon film was transferred to the isopropyl alcohol solution using a glass substrate. A carbon film was obtained by pulling up the carbon film and drying it.

The pellicle of Example 1 was obtained by attaching the obtained carbon film to the upper end surface of the frame with adhesive via Aron Ceramic E (manufactured by Toagosei Co., Ltd.).

<Example 2>
Example 1 except that a frame made of β alloy (Ti-15V-3Cr-3Sn-3Al) was used instead of glassy carbon, and Aron Ceramic D (manufactured by Toagosei Co., Ltd.) was used instead of Aron Ceramic E. A pellicle was prepared in the same manner as

<Example 3>
In the same manner as in Example 1, except that a frame made of αβ alloy (Ti-6Al-4V) was used instead of glassy carbon, and Sumiceram S18 (manufactured by Asahi Kagaku Kogyo Co., Ltd.) was used instead of Aron Ceramic E. A pellicle was fabricated.

<Comparative Example 1>
In the same manner as in Example 1, except that a frame made of β alloy (Ti-15V-3Cr-3Sn-3Al) was used instead of glassy carbon, and an epoxy adhesive was used instead of the pellicle film adhesive. A pellicle was fabricated.

<Comparative Example 2>
Same as Example 1, except that a frame made of β alloy (Ti-15V-3Cr-3Sn-3Al) was used instead of glassy carbon, and acrylic urethane adhesive was used instead of zirconia-based inorganic adhesive. A pellicle was produced by

[Evaluation of physical properties of frame]
The pellicles of Examples and Comparative Examples manufactured as described above were subjected to a heat resistance test and evaluated.

<Heat resistance test>
The resulting pellicle was attached to a quartz substrate (6025) and stored in an oven at 200° C. for 24 hours. After that, the state of the pellicle was visually confirmed. When the adhesive was not peeled off, it was rated as ◯, and when the adhesive was peeled off, it was rated as x.

Table 1 shows the evaluation results of the heat resistance test for the pellicles of Examples and Comparative Examples.

As is clear from Table 1, in the comparative example using the pellicle film adhesive layer having a coefficient of linear expansion greater than 20×10 ⁻⁶ /K, the pellicle film peeled off in the heat resistance test. In the examples using the pellicle film adhesive layer having a coefficient of linear expansion of 20×10 ⁻⁶ /K or less, peeling of the pellicle film was not observed even in the heat resistance test. In particular, better results were obtained in the examples in which the linear expansion coefficient ratio between the frame and the pellicle film adhesive layer was 0.4 to 2.0.

Although the embodiment of the present invention has been described above, the present invention is not limited to this, and can be modified as appropriate without departing from the gist of the invention.

By using the pellicle according to the present invention, the peeling of the pellicle film is suppressed even at a high temperature of, for example, 500° C. or higher, and the pellicle can be widely used as a pellicle for EUV lithography.

1: Pellicle 2: Frame 3: Pellicle film 4: Pellicle film adhesive layer 5: Mask adhesive layer 6: Release film

Claims (13)

A pellicle comprising a frame having an opening, a pellicle membrane stretched and supported on one side of the frame so as to cover the opening, and a pellicle membrane adhesive layer for bonding the pellicle membrane to the frame. and
A pellicle for use in EUV lithography, wherein the linear expansion coefficient of the pellicle film adhesive layer is more than 0 and 20×10 ⁻⁶ /K or less. 2. The pellicle according to claim 1, wherein the linear expansion coefficient of the pellicle film adhesive layer is more than 0 and 15×10 ⁻⁶ /K or less. 3. The pellicle according to claim 1, wherein the pellicle film adhesive layer comprises an inorganic adhesive. 4. The pellicle according to claim 3, wherein said inorganic adhesive comprises at least one material selected from the group consisting of zirconia, alumina and silica. Claims 1 to 2, wherein a linear expansion coefficient ratio between the frame and the pellicle film adhesive layer (linear expansion coefficient of the frame/linear expansion coefficient of the pellicle film adhesive layer) is 0.4 to 2.0. 5. The pellicle according to any one of 4. The pellicle according to any one of claims 1 to 4, wherein the linear expansion coefficient of the pellicle film adhesive layer is equal to or greater than the linear expansion coefficient of the frame. The pellicle according to any one of claims 1 to 6, wherein the pellicle film adhesive layer has a thickness of 0.8 mm to 2.5 mm. The pellicle according to any one of claims 1 to 7, wherein the pellicle membrane comprises a carbon membrane. The pellicle according to any one of claims 1 to 8, wherein the frame contains at least one selected from the group consisting of titanium, titanium alloys and carbon materials. A pellicle membrane adhesive disposed between a frame and a pellicle membrane in a pellicle,
The pellicle film adhesive is provided in a pellicle used for EUV lithography, and has a linear expansion coefficient of more than 0 and 20×10 ⁻⁶ /K or less. A photomask with a pellicle, comprising a photomask to which the pellicle according to any one of claims 1 to 9 is attached. A method of manufacturing a semiconductor device, comprising a step of exposing with the pellicle-equipped photomask according to claim 11 . A method of manufacturing a liquid crystal display panel, comprising a step of exposing with the photomask with a pellicle according to claim 11 .

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