JP2023002461A - Substrate processing apparatus and electrostatic chuck - Google Patents

Abstract

To appropriately control a temperature of a substrate to improve uniformity of plasma treatment in a substrate surface.SOLUTION: A substrate processing apparatus comprises: a chamber; a substrate support unit disposed in the chamber and having at least one first gas supply passage, the substrate support unit including a base and an electrostatic chuck with a top surface which is disposed on the base, the top surface having a plurality of protrusions and a first annular groove group, the first annular groove group including a first inner annular groove, a first intermediate annular groove, and a first outer annular groove, any one of the first inner annular groove, the first intermediate annular groove, and the first outer annular groove communicating with the at least one first gas supply passage; and at least one control valve configured so as to control a flow rate or pressure of gas to be supplied via the at least one first gas supply passage.SELECTED DRAWING: Figure 3

Description

The present disclosure relates to substrate processing apparatuses and electrostatic chucks.

U.S. Patent No. 5,200,009 discloses an electrostatic chuck comprising a plurality of sealing bands located on the chuck surface. A plurality of sealing bands contact the substrate to form a seal between adjacent cooling bands.

Japanese Patent Laid-Open No. 2002-200001 discloses that an outer ring is provided to annularly surround the outermost circumference of the substrate holding surface of the electrostatic chuck. The outer ring contacts the substrate when the substrate is placed on the substrate holding surface.

Japanese Patent Publication No. 2020-512692 JP 2006-257495 A

The technique according to the present disclosure appropriately controls the temperature of the substrate and improves the uniformity of plasma processing within the substrate surface.

One aspect of the present disclosure is a chamber; a substrate support disposed within the chamber and having at least one first gas supply path; a base; An electric chuck, wherein the upper surface has a plurality of protrusions and a first group of annular grooves, the first group of annular grooves comprising a first inner annular groove, a first intermediate annular groove and a first any one of the first inner annular groove, the first intermediate annular groove and the first outer annular groove communicating with the at least one first gas supply passage; the substrate support, comprising the electrostatic chuck; and at least one control valve configured to control the flow rate or pressure of gas supplied through the at least one first gas supply passage. , provided.

According to the present disclosure, it is possible to appropriately control the temperature of the substrate and improve the uniformity of plasma processing within the substrate surface.

1 is an explanatory diagram schematically showing the configuration of a plasma processing system; FIG. 1 is a vertical cross-sectional view showing an outline of a configuration of a plasma processing apparatus; FIG. It is a top view which shows the outline of a structure of an electrostatic chuck. It is a top view which shows the outline of a partial structure of an electrostatic chuck. 1 is a vertical cross-sectional view showing an outline of the configuration of an electrostatic chuck; FIG. It is a longitudinal cross-sectional view showing the outline of the configuration around the annular groove. FIG. 4 is a plan view showing the outline of the configuration of a first annular groove group; FIG. 4 is a plan view showing the outline of the configuration of a second annular groove group; FIG. 11 is a plan view showing the outline of the configuration of a third annular groove group; FIG. 4 is an explanatory diagram showing the function of an annular groove; 7 is a graph showing experimental results (pressure in heat transfer space) in a comparative example. 4 is a graph showing experimental results (pressure in heat transfer space) in this embodiment. 7 is a graph showing experimental results (substrate temperature) in a comparative example. 5 is a graph showing experimental results (substrate temperature) in the present embodiment. FIG. 10 is a vertical cross-sectional view showing an outline of a configuration around an annular groove according to another embodiment; FIG. 10 is a vertical cross-sectional view showing an outline of a configuration around an annular groove according to another embodiment; FIG. 10 is a plan view showing the outline of the configuration of an annular groove according to another embodiment; FIG. 10 is a plan view showing the outline of the configuration of an annular groove according to another embodiment; FIG. 10 is a plan view showing the outline of the configuration of an annular groove according to another embodiment; FIG. 10 is a plan view showing the outline of the configuration of an annular groove according to another embodiment; FIG. 10 is a vertical cross-sectional view showing an outline of a configuration around an annular groove according to another embodiment; FIG. 11 is a plan view showing an outline of a configuration around an annular groove according to another embodiment; FIG. 10 is a vertical cross-sectional view showing an outline of a configuration around an annular groove according to another embodiment; FIG. 11 is a plan view showing an outline of a configuration around an annular groove according to another embodiment; FIG. 11 is a plan view showing an outline of a configuration around an annular groove according to another embodiment; FIG. 10 is a vertical cross-sectional view showing an outline of a configuration around an annular groove according to another embodiment; FIG. 10 is a plan view showing an outline of a partial configuration of an electrostatic chuck according to another embodiment;

2. Description of the Related Art In a semiconductor device manufacturing process, a semiconductor substrate (hereinafter referred to as “substrate”) is subjected to plasma processing, for example, in a plasma processing apparatus. A plasma processing apparatus generates plasma by exciting a processing gas inside a chamber, and processes a substrate supported by an electrostatic chuck with the plasma.

In plasma processing, it is required to appropriately control the temperature of the substrate to be processed in order to improve the in-plane uniformity of the plasma processing on the substrate. Therefore, for example, a heat transfer gas such as helium gas is supplied to the space between the back surface of the substrate and the front surface of the electrostatic chuck, and the pressure of the heat transfer gas is controlled to control the temperature of the substrate.

Further, in recent years, in order to cope with the further increase in accuracy of substrate temperature control, the space between the back surface of the substrate and the surface of the electrostatic chuck is divided into a plurality of areas, and a pressure difference of the heat transfer gas is provided between the areas. Therefore, the temperature of the substrate is controlled for each region. Conventionally, in order to control the pressure of the heat transfer gas for each region, for example, a partition called a so-called seal band is provided on the surface of the electrostatic chuck, which is in direct contact with the back surface of the substrate. For example, the above-mentioned Patent Document 1 discloses a configuration in which a plurality of sealing bands are provided as sealing bands on the surface of the electrostatic chuck. Moreover, the above-mentioned Patent Document 2 describes that an inner peripheral ring may be provided inside the outermost peripheral ring on the surface of the electrostatic chuck.

However, since the seal band directly contacts the back surface of the substrate, the contact portion becomes a local temperature singularity. Specifically, heat is transferred to the substrate at the contact portion, and the temperature of the substrate at the contact portion decreases. The temperature singularity of the substrate affects the plasma processing rate, and as a result, the plasma processing may not be performed uniformly across the substrate surface. Therefore, conventional plasma processing leaves room for improvement.

The technology according to the present disclosure has been made in view of the above circumstances, and appropriately controls the temperature of the substrate to improve the uniformity of plasma processing within the substrate surface. A plasma processing apparatus and an electrostatic chuck according to the present embodiment will be described below with reference to the drawings. In the present specification and drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, thereby omitting redundant description.

<Plasma processing system>
First, a plasma processing system according to one embodiment will be described with reference to FIG. FIG. 1 is an explanatory diagram schematically showing the configuration of a plasma processing system.

In one embodiment, the plasma processing system includes a plasma processing apparatus 1 as a substrate processing apparatus and a controller 2 . The plasma processing apparatus 1 includes a plasma processing chamber 10 as a chamber, a substrate support section 11 and a plasma generation section 12 . Plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas inlet for supplying at least one process gas to the plasma processing space and at least one gas outlet for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply section 20, which will be described later, and the gas discharge port is connected to an exhaust system 40, which will be described later. The substrate support 11 is arranged in the plasma processing space and has a substrate support surface for supporting the substrate.

The plasma generator 12 is configured to generate plasma from at least one processing gas supplied within the plasma processing space. Plasma formed in the plasma processing space includes capacitively coupled plasma (CCP: Capacitively Coupled Plasma), inductively coupled plasma (ICP: Inductively Coupled Plasma), ECR plasma (Electron-Cyclotron-resonance plasma), helicon wave excited plasma (HWP: Helicon Wave Plasma), surface wave plasma (SWP: Surface Wave Plasma), or the like. Also, various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency within the range of 100 kHz to 10 GHz. Accordingly, AC signals include RF (Radio Frequency) signals and microwave signals. In one embodiment, the RF signal has a frequency within the range of 200 kHz-150 MHz.

Controller 2 processes computer-executable instructions that cause plasma processing apparatus 1 to perform the various steps described in this disclosure. Controller 2 may be configured to control elements of plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1 . The control unit 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. Processing unit 2a1 can be configured to perform various control operations based on programs stored in storage unit 2a2. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

<Plasma processing equipment>
A configuration example of a capacitively-coupled plasma processing apparatus as an example of the plasma processing apparatus 1 will be described below with reference to FIG. FIG. 2 is a longitudinal sectional view showing the outline of the configuration of the plasma processing apparatus 1. As shown in FIG. In the plasma processing apparatus 1 of this embodiment, a substrate (wafer) W is subjected to plasma processing, but the substrate W to be subjected to plasma processing is not limited to a wafer.

The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply section 20, a power supply 30 and an exhaust system 40. As shown in FIG. Further, the plasma processing apparatus 1 includes a substrate support section 11 and a gas introduction section. The gas introduction is configured to introduce at least one process gas into the plasma processing chamber 10 . The gas introduction section includes a showerhead 13 . A substrate support 11 is positioned within the plasma processing chamber 10 . The showerhead 13 is arranged above the substrate support 11 . In one embodiment, showerhead 13 forms at least a portion of the ceiling of plasma processing chamber 10 . The plasma processing chamber 10 has a plasma processing space 10 s defined by a showerhead 13 , side walls 10 a of the plasma processing chamber 10 and a substrate support 11 . Side wall 10a is grounded. The showerhead 13 and substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10 .

The substrate support portion 11 includes a support body portion 111 and a ring assembly 112 . The upper surface of the support body portion 111 has a substrate support surface 111 a that is a central area for supporting the substrate W and a ring support surface 111 b that is an annular area for supporting the ring assembly 112 . The ring support surface 111b of the support body portion 111 surrounds the substrate support surface 111a of the support body portion 111 in plan view. The substrate W is placed on the substrate support surface 111a of the support body portion 111, and the ring assembly 112 is placed on the ring support surface 111b of the support body portion 111 so as to surround the substrate W on the substrate support surface 111a of the support body portion 111. placed in

In one embodiment, support body 111 includes base 113 and electrostatic chuck 114 . Base 113 includes a conductive member. The conductive member of base 113 functions as a lower electrode. The electrostatic chuck 114 is arranged on the upper surface of the base 113 . The upper surface of the electrostatic chuck 114 has a substrate support surface 111a. Note that, in one embodiment, the upper surface of the electrostatic chuck 114 may have the ring support surface 111b. The configuration of this electrostatic chuck 114 will be described later. Ring assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring.

Also, although not shown, the substrate supporter 11 may include a temperature control module configured to control at least one of the electrostatic chuck 114, the ring assembly 112, and the substrate W to a target temperature. The temperature control module may include heaters, heat transfer media, flow paths, or combinations thereof. For example, a flow path may be formed in the base 113 and a heater may be provided in the electrostatic chuck 114 . A heat transfer fluid, such as brine or gas, flows through the channel.

The showerhead 13 is configured to introduce at least one processing gas from the gas supply 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas introduction ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through a plurality of gas introduction ports 13c. Showerhead 13 also includes a conductive member. A conductive member of the showerhead 13 functions as an upper electrode. In addition to the showerhead 13, the gas introduction part may include one or more side gas injectors (SGI: Side Gas Injectors) attached to one or more openings formed in the side wall 10a.

Gas supply 20 may include at least one gas source 21 and at least one flow controller 22 . In one embodiment, gas supply 20 is configured to supply at least one process gas from respective gas sources 21 through respective flow controllers 22 to showerhead 13 . Each flow controller 22 may include, for example, a mass flow controller or a pressure controlled flow controller. Additionally, gas supply 20 may include at least one flow modulation device for modulating or pulsing the flow rate of at least one process gas.

Power supply 30 includes an RF power supply 31 coupled to plasma processing chamber 10 via at least one impedance match circuit. RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to conductive members of substrate support 11 and/or conductive members of showerhead 13 . be done. Thereby, plasma is formed from at least one processing gas supplied into the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least part of the plasma generator 12 . Further, by supplying the bias RF signal to the conductive member of the substrate supporting portion 11, a bias potential is generated in the substrate W, and ion components in the formed plasma can be drawn into the substrate W. FIG.

In one embodiment, the RF power supply 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generator 31a is coupled to the conductive member of the substrate support 11 and/or the conductive member of the showerhead 13 via at least one impedance matching circuit to provide a source RF signal for plasma generation (source RF electrical power). In one embodiment, the source RF signal has a frequency within the range of 13 MHz to 150 MHz. In one embodiment, the first RF generator 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are provided to conductive members of the substrate support 11 and/or conductive members of the showerhead 13 . The second RF generator 31b is coupled to the conductive member of the substrate support 11 via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In one embodiment, the bias RF signal has a frequency within the range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. One or more bias RF signals generated are provided to the conductive members of the substrate support 11 . Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

Power supply 30 may also include a DC power supply 32 coupled to plasma processing chamber 10 . The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to a conductive member of the substrate support 11 and configured to generate the first DC signal. The generated first DC signal is applied to the conductive member of substrate support 11 . In one embodiment, the first DC signal may be applied to another electrode provided within the electrostatic chuck 114, such as the attraction electrode 201 described below. In one embodiment, the second DC generator 32b is connected to the conductive member of the showerhead 13 and configured to generate the second DC signal. The generated second DC signal is applied to the conductive members of showerhead 13 . In various embodiments, the first and second DC signals may be pulsed. Note that the first and second DC generators 32a and 32b may be provided in addition to the RF power supply 31, and the first DC generator 32a may be provided instead of the second RF generator 31b. good.

The exhaust system 40 may be connected to a gas outlet 10e provided at the bottom of the plasma processing chamber 10, for example. Exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. Vacuum pumps may include turbomolecular pumps, dry pumps, or combinations thereof.

<Plasma treatment method>
Next, plasma processing performed using the plasma processing system configured as described above will be described. As plasma processing, for example, etching processing and film forming processing are performed.

First, the substrate W is loaded into the plasma processing chamber 10 and placed on the electrostatic chuck 114 . After that, by applying a DC voltage to an attraction electrode 201, which will be described later, of the electrostatic chuck 114, the substrate W is electrostatically attracted to and held by the electrostatic chuck 114 by Coulomb force. At this time, the substrate W is adjusted to a desired temperature. After loading the substrate W, the inside of the plasma processing chamber 10 is depressurized to a desired degree of vacuum by the exhaust system 40 .

Next, a processing gas is supplied from the gas supply unit 20 to the plasma processing space 10 s through the shower head 13 . Also, the first RF generator 31 a of the RF power supply 31 supplies the source RF power for plasma generation to the conductive member of the substrate support 11 and/or the conductive member of the shower head 13 . Then, the process gas is excited to generate plasma. At this time, a bias RF signal for attracting ions may be supplied from the second RF generator 31b. Then, the substrate W is subjected to plasma processing by the action of the generated plasma.

<Electrostatic Chuck>
Next, the configuration of the electrostatic chuck 114 described above will be described. FIG. 3 is a plan view showing a schematic configuration of the electrostatic chuck 114. As shown in FIG. FIG. 4 is a plan view schematically showing a partial configuration of the electrostatic chuck 114. As shown in FIG. FIG. 5 is a longitudinal sectional view showing the outline of the structure of the electrostatic chuck 114. As shown in FIG. 4 and 5, C indicates the center line of the electrostatic chuck 114. As shown in FIG.

As shown in FIGS. 3-5, the electrostatic chuck 114 has a chuck body 200. As shown in FIG. The chuck main body 200 is made of a dielectric material such as ceramics such as alumina (Al ₂ O ₃ ). The electrostatic chuck 114 has a substantially disk shape. An attraction electrode 201 connected to, for example, the first DC generator 32a is provided inside the chuck body 200 . The electrostatic chuck 114 can attract the substrate W by applying a DC voltage from the first DC generator 32a to the attraction electrode 201 to generate a Coulomb force. Also, a heater (not shown) may be provided inside the chuck main body 200 .

The upper surface of the chuck body 200 has a substrate support surface 111a for supporting the substrate W. As shown in FIG. The substrate support surface 111a is formed in a circular shape having a smaller diameter than the substrate W to be supported, for example. Accordingly, when the substrate W is supported on the substrate supporting surface 111a, the outer peripheral portion of the substrate W protrudes outward from the end portion of the substrate supporting surface 111a.

The substrate support surface 111a of the chuck body 200 has substrate contact portions 210 and outer peripheral contact portions 211 as a plurality of projections. The substrate contact portion 210 is a dot having a cylindrical shape, and is provided so as to protrude from the substrate support surface 111a. A plurality of substrate contact portions 210 are provided inside the outer peripheral contact portion 211 . The outer peripheral contact portion 211 is provided in an annular shape at the outermost peripheral portion of the substrate supporting surface 111a so as to protrude from the substrate supporting surface 111a. The plurality of substrate contact portions 210 and the outer peripheral contact portion 211 have the same height and flat upper surface, and come into contact with the substrate W when the substrate W is supported on the substrate support surface 111a. Accordingly, the substrate W is supported by the plurality of substrate contact portions 210 and the peripheral contact portion 211 .

Further, the substrate support surface 111 a of the chuck body 200 has a plurality of annular grooves 220 . The annular groove 220 is recessed from the substrate supporting surface 111a and is provided in an annular shape, in this embodiment, in an annular shape. Moreover, the annular groove 220 has a rectangular shape in a cross-sectional view.

As shown in FIG. 6, the depth D1 of the annular groove 220 (the depth from the substrate support surface 111a to the bottom of the annular groove 220) corresponds to the height H1 of the substrate contact portion 210 (the depth from the substrate support surface 111a to the substrate contact portion 210). height to the top surface of the Also, the depth D2 of the annular groove 220 (the depth from the top surface of the substrate contact portion 210 to the bottom of the annular groove 220) is at least twice the height H1 of the substrate contact portion 210. FIG. For example, the height H1 of the substrate contact portion 210 is 5 μm to 20 μm, and the depth D2 of the annular groove 220 is 10 μm to 40 μm.

The upper limits of the depths D1 and D2 of the annular groove 220 are not particularly limited. For example, the annular groove 220 may extend vertically downward until its bottom does not reach the adsorption electrode 201 and is positioned slightly above the upper surface of the adsorption electrode 201 . Further, for example, the depth D1 of the annular groove 220 may be half or less of the distance H2 from the top surface of the substrate contact portion 210 to the top surface of the attraction electrode 201 .

Although the width E of the annular groove 220 is not particularly limited, it is, for example, 0.3 mm to 10 mm.

As shown in FIGS. 3 to 5, in one embodiment, the substrate support surface 111a has, for example, eight annular grooves 220a to 220h arranged in this order from the inner side to the outer side in the radial direction. The central positions of these eight annular grooves 220a to 220h in plan view are the same as the central positions on the substrate supporting surface 111a, that is, the eight annular grooves 220a to 220h are provided on concentric circles.

In one embodiment, the eight annular grooves 220a-220h comprise, for example, three annular groove groups G1-G3. The three annular groove groups G1 to G3 are arranged side by side in this order from the inner side to the outer side in the radial direction.

As shown in FIG. 7, the first annular groove group G1 is composed of three annular grooves 220a-220c. Adjacent first inner annular groove 220a and first intermediate annular groove 220b are adjacent, and adjacent first intermediate annular groove 220b and first outer annular groove 220c are also adjacent. A groove-to-groove distance L1 between the first inner annular groove 220a and the first intermediate annular groove 220b (a groove-to-groove distance L1 between the first intermediate annular groove 220b and the first outer annular groove 220c) is, for example, 1 mm to 10 mm. .

As shown in FIG. 8, the second annular groove group G2 is composed of three annular grooves 220d to 220f. Adjacent second inner annular groove 220d and second intermediate annular groove 220e are adjacent, and adjacent second intermediate annular groove 220e and second outer annular groove 220f are also adjacent. A groove-to-groove distance L2 between the second inner annular groove 220d and the second intermediate annular groove 220e (a groove-to-groove distance L2 between the second intermediate annular groove 220e and the second outer annular groove 220f) is, for example, 1 mm to 10 mm. .

As shown in FIG. 9, the third annular groove group G3 is composed of two annular grooves 220g and 220h. The adjacent third inner annular groove 220g and third outer annular groove 220h are close to each other. A groove-to-groove distance L3 between the third inner annular groove 220g and the third outer annular groove 220h is, for example, 1 mm to 10 mm.

Further, as shown in FIGS. 3 to 5, the substrate support surface 111a is partitioned into four regions R1 to R4 by the three annular groove groups G1 to G3. The first region R1 is a circular region radially inside the first annular groove group G1. The second region R2 is an annular region between the first annular groove group G1 and the second annular groove group G2. The third region R3 is an annular region between the second annular groove group G2 and the third annular groove group G3. A fourth region R<b>4 is an annular region between the third annular groove group G<b>3 and the outer peripheral contact portion 211 . A plurality of substrate contact portions 210 described above are arranged in each of the regions R1 to R3. Moreover, although the radial width of the fourth region R4 is small in the illustrated example, the radial width is not limited to this, and may be large depending on the situation.

A plurality of heat transfer gas supply holes 230 are provided in the chuck body 200 . As shown in FIG. 6 , the heat transfer gas supply hole 230 is provided through the chuck body 200 from the bottom of the annular groove 220 . As shown in FIGS. 3 to 5, in one embodiment, the chuck body 200 is provided with heat transfer gas supply holes 230a, 230b, and 230c in the three annular groove groups G1 to G3, respectively. there is Helium gas, for example, is used as the heat transfer gas (backside gas).

The first annular groove group G1 is provided with a plurality of first heat transfer gas supply holes 230a in the bottom portion of the first intermediate annular groove 220b. A first heat transfer gas supply passage 231a as a first gas supply passage is connected to the first heat transfer gas supply hole 230a. are in communication. A first control valve 233a and a first pressure gauge 234a are provided in the first heat transfer gas supply path 231a from the heat transfer gas supply source 232 side. The degree of opening of the first control valve 233a is controlled so that the pressure detected by the first pressure gauge 234a becomes a desired pressure. Thereby, the first control valve 233a is configured to control the flow rate or pressure of the heat transfer gas supplied from the heat transfer gas supply source 232 through the first heat transfer gas supply passage 231a. Note that the first control valve 233a and the first pressure gauge 234a may be integrally provided. Then, the heat transfer gas supplied from the heat transfer gas supply source is supplied to the first intermediate annular groove 220b through the first heat transfer gas supply path 231a and the first heat transfer gas supply hole 230a. It diffuses in the circumferential direction along the first intermediate annular groove 220b. Further, the heat transfer gas flows into the annular grooves 220a, 220c adjacent to the first intermediate annular groove 220b and diffuses circumferentially along the annular grooves 220a, 220c. The heat transfer gas is also supplied to the space between the back surface of the substrate W and the substrate support surface 111a (hereinafter referred to as "heat transfer space"). The first heat transfer gas supply hole 230a, the first heat transfer gas supply path 231a, and the first control valve 233a may be provided in any one of the annular grooves 220a to 220c.

The second annular groove group G2 is provided with a plurality of second heat transfer gas supply holes 230b at the bottom of the second intermediate annular groove 220e. A second heat transfer gas supply passage 231b as a second gas supply passage is connected to the second heat transfer gas supply hole 230b. are in communication. A second control valve 233b and a second pressure gauge 234b are provided in the second heat transfer gas supply path 231b from the heat transfer gas supply source 232 side. The second control valve 233b and the second pressure gauge 234b have similar configurations to the first control valve 233a and the first pressure gauge 234a, respectively, and the second control valve 233b controls the flow rate or the flow rate of the heat transfer gas. configured to control the pressure; As with the first annular groove group G1, the heat transfer gas supplied from the heat transfer gas supply source through the second heat transfer gas supply path 231b and the second heat transfer gas supply path 231b It diffuses circumferentially along 220d, 220e, and 220f and is also supplied to the heat transfer space. The second heat transfer gas supply hole 230b, the second heat transfer gas supply path 231b, and the second control valve 233b may be provided in any one of the annular grooves 220d to 220f.

The third annular groove group G3 is provided with a plurality of third heat transfer gas supply holes 230c at the bottom of the third outer annular groove 220h. A third heat transfer gas supply passage 231c as a third gas supply passage is connected to the third heat transfer gas supply hole 230c. are in communication. A third control valve 233c and a third pressure gauge 234c are provided in the third heat transfer gas supply path 231c from the heat transfer gas supply source 232 side. The third control valve 233c and the third pressure gauge 234c have similar configurations to the first control valve 233a and the first pressure gauge 234a, respectively, and the third control valve 233c controls the flow rate or the flow rate of the heat transfer gas. configured to control the pressure; As in the case of the first annular groove group G1, the heat transfer gas supplied from the heat transfer gas supply source through the third heat transfer gas supply passage 231c and the third heat transfer gas supply passage 231c flows into the annular groove. It diffuses in the circumferential direction along 220g and 220h and is also supplied to the heat transfer space. The third heat transfer gas supply hole 230c, the third heat transfer gas supply path 231c, and the third control valve 233c may be provided in either one of the annular grooves 220g and 220h.

In this embodiment, the heat transfer gas supply paths 231a to 231c are merged and communicated with the common heat transfer gas supply source 232, but may be communicated with individual heat transfer gas supply sources. In this embodiment, the control valves 233a to 233c are used to control the flow rate or pressure of the heat transfer gas supplied from the heat transfer gas supply holes 230a to 230c. Varying the diameter of 230c may control the flow rate or pressure of the heat transfer gas. For example, when the pressure of the heat transfer gas supplied from the heat transfer gas supply holes 230a to 230c is different, the pressure in the heat transfer space is different for each of the three regions R1 to R3.

FIG. 10 shows that when the pressure of the heat transfer gas from the second heat transfer gas supply hole 230b is higher than the pressure from the first heat transfer gas supply hole 230a, the pressure difference in the heat transfer space between the regions R1 and R2 is an explanatory diagram showing how the occurs. In FIG. 10, only the annular grooves 220b and 220e provided with the heat transfer gas supply holes 230a and 230b are shown for the sake of simplicity. As described above, in the first annular groove group G1, the heat transfer gas diffuses in the circumferential direction along the annular grooves 220b (220a, 220c), and in the second annular groove group G2, the heat transfer gas diffuses into the annular grooves 220e (220d, 220f). The heat transfer gas diffuses circumferentially along the In this case, the gas conductance in the heat transfer space is low between the regions R1 and R2 (in the radial direction), and a differential pressure is generated in the heat transfer space between the regions R1 and R2. That is, the pressure in the heat transfer space in the second region R2 becomes higher than the pressure in the heat transfer space in the first region R1.

According to the above theory, for example, when the pressure of the heat transfer gas supplied from the heat transfer gas supply holes 230a to 230c increases in this order, the pressure in the heat transfer spaces of the regions R1 to R3 also increases in this order. When the pressures of the heat transfer gases supplied from the heat transfer gas supply holes 230a, 230b, and 230c are respectively P1, P2, and P3 (P1<P2<P3), the inventors have The pressure in the heat transfer space was investigated. FIG. 11 shows, as a comparative example, the experimental result in the case where the substrate support surface 111a is not provided with the annular groove 220, ie, the heat transfer gas supply holes 230a, 230b, and 230c are provided in the substrate support surface 111a. FIG. 12 shows experimental results when annular grooves 220a to 220h are provided in the substrate support surface 111a as in this embodiment. 11 and 12, the vertical axis indicates the pressure in the heat transfer space, and the horizontal axis indicates the radial position of the substrate W in a specific direction. 11 and 12, illustration of the fourth region R4 is omitted for ease of explanation.

As shown in FIG. 11, in the comparative example, the pressure in the heat transfer space was substantially constant in the radial direction of the substrate W, and the differential pressure in the heat transfer spaces of the regions R1 to R3 was small. Since the annular groove 220 is not formed in the substrate support surface 111a, the gas conductance of the heat transfer space is increased radially inside and outside the heat transfer gas supply holes 230a to 230c, and the heat transfer gas is distributed radially. This is because it spread to

In contrast, as shown in FIG. 12, in the present embodiment, a differential pressure can be generated in the heat transfer spaces of regions R1 to R3. The heat transfer gas diffuses from the first heat transfer gas supply holes 230a into the heat transfer space of the first annular groove group G1 and the first region R1. The pressure of the heat transfer space in the first annular groove group G1 and the first region R1 becomes substantially the same as the pressure P1 of the heat transfer gas from the first heat transfer gas supply hole 230a.

The heat transfer gas from the second heat transfer gas supply holes 230b diffuses into the heat transfer space of the second annular groove group G2, and the pressure in the heat transfer space increases from the second heat transfer gas supply hole 230b. becomes substantially the same as the pressure P2 of the heat transfer gas. Also, the pressure in the heat transfer space of the second region R2 changes from P1 to P2 from the radially inner side to the outer side. Here, the heat transfer gas supplied at pressure P1 from the first heat transfer gas supply hole 230a and the heat transfer gas supplied at pressure P2 from the second heat transfer gas supply hole 230b are supplied to the heat transfer space of the second region R2. The heated heat transfer gas diffuses. Then, in the second region R2, the pressure gently changes from P1 to P2 from the radially inner side to the outer side.

The heat transfer gas from the third heat transfer gas supply hole 230c diffuses into the heat transfer space of the third annular groove group G3, and the pressure in the heat transfer space increases from the third heat transfer gas supply hole 230c. becomes substantially the same as the pressure P3 of the heat transfer gas. Also, the pressure in the heat transfer space of the third region R3 gradually changes from P2 to P3 from the inner side to the outer side in the radial direction.

As described above, according to the present embodiment, it is possible to generate a differential pressure in the heat transfer spaces of the regions R1 to R3, control the pressure in the heat transfer spaces of the regions R1 to R3, and control the pressure in each of the regions R1 to R3. The temperature of the substrate W can be controlled at a constant rate. At this time, by providing the annular grooves 220a to 220h, differential pressure can be generated in the heat transfer spaces of the regions R1 to R3 without contacting the substrate W, so that the seal band contacts the substrate as in the conventional art. The local temperature singularity that occurs in the case cannot occur. Therefore, according to the present embodiment, the temperature controllability of the substrate W can be improved, and the plasma processing can be appropriately performed.

As described above, according to the present embodiment, when the substrate support surface 111a is divided into the regions R1 to R3, the substrate W is not contacted, so that there is no change in shape due to wear unlike the conventional seal band. . Therefore, the pressure in the heat transfer spaces of the regions R1 to R3 can be appropriately controlled without changing with time.

Here, when the heat transfer space is partitioned into a plurality of regions by a seal band and the temperature of the substrate is controlled by controlling the pressure for each region as in the conventional art, the temperature of the substrate abruptly changes at the boundaries of the regions. In this regard, in this embodiment, since the radial pressure change in the heat transfer space is gentle, the temperature of the substrate W can also be gently changed in the radial direction. Therefore, according to this embodiment, the temperature controllability of the substrate W can be further improved.

Further, as a result of extensive studies by the present inventors, when the depth D2 of the annular groove 220 is at least twice the height H1 of the substrate contact portion 210 as in the present embodiment, the effect of the annular groove 220 described above, that is, It has been found that the effect of controlling the pressure in the heat transfer spaces of the regions R1 to R3 can be exhibited. Although the upper limits of the depths D1 and D2 of the annular groove 220 are not particularly limited, for example, the greater the depths D1 and D2 of the annular groove 220, the more remarkably the effects described above can be obtained. However, there are restrictions on the configuration of the apparatus. good. Further, for example, the depth D1 of the annular groove 220 may be half or less of the distance H2 from the top surface of the substrate contact portion 210 to the top surface of the attraction electrode 201 .

Also, the width E of the annular groove 220 or the number of the annular grooves 220 are not limited to those of this embodiment. For example, even when the width E of the annular groove 220 is small and the number of the annular grooves 220 is one, the effect of controlling the pressure in the heat transfer spaces of the regions R1 to R3 can be obtained. However, when the width E of the annular groove 220 is large and the number of the annular grooves 220 is large, this effect can be exhibited more remarkably.

In other words, the shape and installation range of the annular groove 220 on the substrate support surface 111a are not limited to those of this embodiment. By arbitrarily setting the shape and installation range of the annular groove 220, the substrate support surface 111a can be divided into arbitrary regions, and the pressure of the heat transfer space in each region can be arbitrarily controlled.

Further, according to the present embodiment, since the heat transfer gas diffuses along the circumferential direction in each of the annular groove groups G1 to G3, the temperature uniformity of the substrate W in the circumferential direction can also be improved.

Next, the results of verification of the effects of this embodiment by the inventors will be described. In this verification, an experiment was conducted on the temperature distribution of the substrate W when the supply pressure of the heat transfer gas was varied. In the above embodiment, the heat transfer gas supply holes 230a to 230c were provided at three locations in the radial direction. Heat transfer gas was supplied from 230c. That is, in this experiment, the substrate supporting surface 111a is divided into two regions, a central region (first region R1 and second region R2) and an outer peripheral region (third region R3).

FIG. 13 shows, as a comparative example, the case where the annular groove 220 is not provided in the substrate support surface 111a, that is, the experimental results when the heat transfer gas supply holes 230b and 230c are provided in the substrate support surface 111a. FIG. 14 shows experimental results when the second annular groove group G2 (annular grooves 220d to 220f) and the third annular groove group G3 (annular grooves 220g and 220h) are provided on the substrate support surface 111a in this embodiment. show. 13 and 14, the vertical axis indicates the temperature of the substrate W, and the horizontal axis indicates the radial position of the substrate W in a specific direction. 13 and 14, "Back Pressure" indicates the pressure of the heat transfer gas, "Center" indicates the heat transfer gas from the second heat transfer gas supply hole 230b, and "Edge" indicates the pressure of the third heat transfer gas. Heat transfer gas from the heat transfer gas supply hole 230c is shown. "Center Zone" indicates the central region (the first region R1 and the second region R2), and "Edge Zone" indicates the outer peripheral region (the third region R3).

As shown in FIG. 13, in the comparative example, even if the pressure of the heat transfer gas from the heat transfer gas supply holes 230b and 230c is changed, the difference between the temperature of the substrate W in the central region and the temperature of the substrate W in the outer region is small. That is, it was difficult to control the substrate W for each region.

In contrast, in this embodiment, as shown in FIG. 14, the pressure of the heat transfer gas from the heat transfer gas supply holes 230b and 230c is varied. In such a case, the heat transfer coefficient with respect to the substrate W in the outer peripheral region is higher than the heat transfer coefficient with respect to the substrate W in the central region. can be lowered. That is, the temperature difference between the substrate W in the central region and the outer peripheral region can be increased, and the substrate W can be controlled for each region. Therefore, by providing the annular groove 220 in the substrate supporting surface 111a as in the present embodiment, it is possible to divide the substrate supporting surface 111a into a plurality of regions and control the temperature of the substrate W for each region. rice field.

<Other embodiments>
In the above embodiment, the substrate supporting surface 111a is provided with the eight annular grooves 220a to 220h, and the three annular groove groups G1 to G3 are formed to partition the substrate supporting surface 111a into the three regions R1 to R3. The number of annular grooves 220 and the number of annular groove groups G are not limited to this.

In the above embodiment, the annular groove groups G1 and G2 are composed of three annular grooves 220, and the annular groove group G3 is composed of two annular grooves 220. is not limited to this. For example, adjacent annular grooves 220 may be spaced apart in the radial direction, and the substrate support surface 111a may be partitioned into a plurality of regions by the annular grooves 220 .

In any case, by arbitrarily setting the arrangement of the annular groove 220 and the group of annular grooves G on the substrate support surface 111a, the substrate support surface 111a can be divided into arbitrary regions, and the heat transfer space of each region can be divided. Pressure can be arbitrarily controlled.

In the above embodiment, the annular groove 220 has a rectangular cross-sectional shape, but the cross-sectional shape of the annular groove 220 is not limited to this. For example, as shown in FIG. 15, the annular groove 220 may have a pentagonal shape in a cross-sectional view, and the bottom of the annular groove 220 may protrude in the vertical direction. Further, for example, as shown in FIG. 16, the bottom surface of the annular groove 220 may protrude in the vertical direction and be curved. In any case, the effect of the annular groove 220 described above, that is, the effect of controlling the pressure in the heat transfer spaces of the regions R1 to R3 can be exhibited.

Also in this embodiment, the depth D2 of the annular groove 220 may be twice or more the height H1 of the substrate contact portion 210 . In this case, the depth D2 of the annular groove 220 refers to the top of the bottom of the annular groove 220 from the substrate supporting surface 111a.

In the above embodiment, the annular groove 220 is provided in an annular shape, but the planar shape of the annular groove 220 is not limited to this, as long as it is annular. 17 to 20 each show a planar shape of an annular groove 220 according to another embodiment. 17 to 20, each annular groove group G1 to G3 is illustrated as a single annular groove for the sake of simplification of the drawings.

As shown in FIG. 17, annular groove 220 may be polygonal. In the illustrated example, the annular grooves 220a to 220c of the first annular groove group G1 and the annular grooves 220d to 220f of the second annular groove group G2 are polygonal. may be polygonal.

As shown in FIG. 18, the annular groove 220 may have a planar shape other than an annular shape. Also, the plurality of annular grooves 220 may have different central positions in plan view. For example, when the planar shape of the plasma processing chamber 10 of the plasma processing apparatus 1 is center asymmetric, the center positions of the plurality of annular grooves 220 in plan view may be different. In the illustrated example, the annular grooves 220a to 220c of the first annular groove group G1 and the annular grooves 220d to 220f of the second annular groove group G2 have different planar shapes and different center positions in plan view. However, any or all of the annular grooves 220a-220h may have other planar shapes.

As shown in FIGS. 19 and 20, the annular groove 220 may be partially discontinuous. At this time, one point may be discontinuous as shown in FIG. 19, or plural points, for example, four points may be discontinuous as shown in FIG. If the annular groove 220 is formed in an annular shape as a whole, the effect of the annular groove 220 described above can be enjoyed. In the illustrated example, the annular grooves 220a to 220c of the first annular groove group G1 and the annular grooves 220d to 220f of the second annular groove group G2 are discontinuous, but any one of the annular grooves 220a to 220h or All may be discontinuous.

Further, as shown in FIG. 20, each of the annular grooves 220a to 220c of the first annular groove group G1 and the annular grooves 220d to 220f of the second annular groove group G2 is divided into a plurality of groove segments in the circumferential direction. good too. The first inner annular groove 220a has a plurality of circumferentially divided first inner groove segments, and the first intermediate annular groove 220b has a plurality of circumferentially divided first intermediate groove segments. and the first outer annular groove 220c has a plurality of circumferentially divided first outer groove segments. The first heat transfer gas supply passage 231a communicates with each of the plurality of first intermediate groove segments. The second inner annular groove 220d has a plurality of circumferentially divided second inner groove segments, and the second intermediate annular groove 220e has a plurality of circumferentially divided second intermediate groove segments. and the second outer annular groove 220f has a plurality of circumferentially divided second outer groove segments. The second heat transfer gas supply holes 230b respectively communicate with the plurality of second intermediate groove segments. Although each of the annular grooves 220a to 220f is divided into four in the illustrated example, the number of divisions is not limited to this.

As described above, the annular shape of the annular groove 220 in the present disclosure includes other annular shapes in addition to the annular shape. Also, the annular shape of the annular groove 220 in the present disclosure does not need to be continuous, and may have an annular shape as a whole. In any case, the effect of the annular groove 220 described above, that is, the effect of controlling the pressure in the heat transfer spaces of the regions R1 to R3 can be exhibited.

In the above embodiment, the heat transfer gas supply hole 230 is provided through the chuck main body 200 from the bottom of the annular groove 220. However, as shown in FIGS. It may be provided near the outside of the groove 220 . Here, the neighborhood means, for example, the distance F between the side surface of the heat transfer gas supply hole 300 and the side surface of the annular groove 220 is 10 mm or less.

The heat transfer gas supply hole 300 is provided through the chuck main body 200 from the substrate supporting surface 111a. A heat transfer gas supply path (not shown) is connected to the heat transfer gas supply hole 300, and the heat transfer gas supply path communicates with a heat transfer gas supply source (not shown). The heat transfer gas supplied from the heat transfer gas supply source is supplied to the heat transfer space through the heat transfer gas supply passage and the heat transfer gas supply hole 300, flows into the adjacent annular groove 220, and flows into the annular groove 220. It diffuses circumferentially along the groove 220 . Thus, the heat transfer gas supply hole 300 of the present embodiment also exhibits the same function as the heat transfer gas supply hole 230 of the above embodiment, and can enjoy the same effects as the above embodiment.

In the above embodiments, the substrate contact portion 210 was provided outside the annular groove 220. However, as shown in FIGS. good. The substrate contact portion 310 is a dot having a cylindrical shape, and contacts the substrate W when the substrate W is supported on the substrate support surface 111a. Further, the substrate contact part 310 is formed so that the heat transfer gas flows along the annular groove 220 even if the substrate contact part 310 is provided inside the annular groove 220 . In such a case, the same effects as those of the above embodiment can be obtained.

In the above embodiment, the plasma processing apparatus 1 may have lifter pins (not shown) for raising and lowering the substrate W with respect to the substrate supporting portion 11 . The lifter pins are provided so as to pass through the substrate support portion 11 .

In such a case, as shown in FIGS. 25 and 26, the chuck body 200 is provided with through holes 320 through which the lifter pins are inserted. Also, the through hole 320 may be provided concentrically with the annular groove 220, and in the example shown in FIGS. It is provided through the chuck main body 200 on the inner side.

The inside of the through hole 320 may be evacuated as a countermeasure against abnormal discharge. In such a case, a seal band 321 is provided around the through hole 320. The seal band 321 contacts the substrate W when the substrate W is supported on the substrate support surface 111a. Since the seal band 321 contacts the substrate W in this manner, the pressure inside the through-hole 320 is reduced.

A second intermediate annular groove 220 e is provided so as to surround the through hole 320 and the seal band 321 . Specifically, the second intermediate annular groove 220 e is branched outside the through hole 320 and the seal band 321 . Even in such a case, the heat transfer gas flows along the second intermediate annular groove 220e and diffuses in the circumferential direction. Therefore, the same effects as those of the above embodiment can be enjoyed.

In the above embodiment, the substrate support surface 111a is divided into four regions R1 to R4 by the three annular groove groups G1 to G3, but part of the groove structure (annular grooves 220a to 220h) is replaced with a seal band structure. may That is, the substrate support surface 111a may be divided into a plurality of regions by the groove structure and the seal band structure.

For example, as shown in FIG. 27, the substrate supporting surface 111a is provided with a projecting portion 330 instead of the third annular groove group G3 of the above embodiment. The protruding portion 330 is provided in an annular shape so as to protrude from the substrate supporting surface 111a. The top surface of the projecting portion 330 is formed flat and at the same height as the top surfaces of the plurality of substrate contact portions 210, and contacts the substrate W when the substrate W is supported by the substrate supporting surface 111a.

In this case, the two annular groove groups G1 and G2 and the protrusion 330 divide the substrate support surface 111a into four regions R1 to R4. That is, the third region R3 is an annular region between the second annular groove group G2 and the protrusion 330, and the fourth region R4 is an annular region between the protrusion 330 and the outer peripheral contact portion 211. is.

As described above, the pressure in the heat transfer spaces of the regions R1 to R3 defined by the two annular groove groups G1 and G2 changes gradually, and the temperature of the substrate W also changes gradually in the radial direction. On the other hand, the pressure in the heat transfer space of the regions R3 to R4 partitioned by the projecting portion 330 abruptly changes at the boundary (the projecting portion 330), and the temperature of the substrate W also abruptly changes. In this way, when it is desired to control the temperature change of the substrate W for each region, it is useful to use both the groove structure and the seal band structure.

In this embodiment, the projecting portion 330 is provided in place of the third annular groove group G3, but the installation location of the projecting portion 330 is not limited to this. The position of the protrusion 330 can be arbitrarily set according to the temperature control of the substrate W. FIG.

In the above embodiments, the number of substrate contact portions 210 per unit area may be changed for each of the regions R1 to R3. By adjusting the number of substrate contact portions 210 per unit area, the contact ratio between the substrate contact portions 210 and the substrate W (=“contact area”/“total area in the region”) can be adjusted. As a result, the heat transfer coefficient with the substrate W can be adjusted. For example, if the number of substrate contact portions 210 per unit area in the third region R3 is increased compared to the first region R1 and the second region R2, the heat transfer to the substrate W in the third region R3 increases. The rate is increased, and the temperature of the substrate W can be lowered. In this manner, the temperature controllability of the substrate W can be further improved by adjusting the number of substrate contact portions 210 per unit area for each of the regions R1 to R3.

It should be considered that the embodiments disclosed this time are illustrative in all respects and not restrictive. The embodiments described above may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

REFERENCE SIGNS LIST 1 plasma processing apparatus 10 plasma processing chamber 11 substrate support 113 base 114 electrostatic chuck 210 substrate contact 220a first inner annular groove 220b first intermediate annular groove 220c first outer annular groove 231a first heat transfer Gas supply path 233a First control valve G1 First annular groove group

The second annular groove group G2 is provided with a plurality of second heat transfer gas supply holes 230b at the bottom of the second intermediate annular groove 220e. A second heat transfer gas supply passage 231b as a second gas supply passage is connected to the second heat transfer gas supply hole 230b. are in communication. A second control valve 233b and a second pressure gauge 234b are provided in the second heat transfer gas supply path 231b from the heat transfer gas supply source 232 side. The second control valve 233b and the second pressure gauge 234b have similar configurations to the first control valve 233a and the first pressure gauge 234a, respectively, and the second control valve 233b controls the flow rate or the flow rate of the heat transfer gas. configured to control the pressure; As with the first annular groove group G1, the heat transfer gas supplied from the heat transfer gas supply source through the second heat transfer gas supply passage 231b and the second heat transfer gas supply hole 230b is supplied to the annular groove group G1. It diffuses circumferentially along 220d, 220e, and 220f and is also supplied to the heat transfer space. The second heat transfer gas supply hole 230b, the second heat transfer gas supply path 231b, and the second control valve 233b may be provided in any one of the annular grooves 220d to 220f.

The third annular groove group G3 is provided with a plurality of third heat transfer gas supply holes 230c at the bottom of the third outer annular groove 220h. A third heat transfer gas supply passage 231c as a third gas supply passage is connected to the third heat transfer gas supply hole 230c. are in communication. A third control valve 233c and a third pressure gauge 234c are provided in the third heat transfer gas supply path 231c from the heat transfer gas supply source 232 side. The third control valve 233c and the third pressure gauge 234c have similar configurations to the first control valve 233a and the first pressure gauge 234a, respectively, and the third control valve 233c controls the flow rate or the flow rate of the heat transfer gas. configured to control the pressure; As with the first annular groove group G1, the heat transfer gas supplied from the heat transfer gas supply source through the third heat transfer gas supply passage 231c and the third heat transfer gas supply hole 230c is supplied to the annular groove group G1. It diffuses in the circumferential direction along 220g and 220h and is also supplied to the heat transfer space. The third heat transfer gas supply hole 230c, the third heat transfer gas supply path 231c, and the third control valve 233c may be provided in either one of the annular grooves 220g and 220h.

One aspect of the present disclosure is a chamber; a substrate support disposed within the chamber and having at least one first gas supply path; a base; An electric chuck, wherein the upper surface has a plurality of protrusions and a first group of annular grooves, the first group of annular grooves comprising a first inner annular groove, a first intermediate annular groove and a first any one of the first inner annular groove , the first intermediate annular groove and the first outer annular groove communicating with the at least one first gas supply passage , the electrostatic chuck, and the substrate support, and at least one control valve configured to control the flow rate or pressure of gas supplied through the at least one first gas supply passage. And prepare.

Also in this embodiment, the depth D2 of the annular groove 220 may be twice or more the height H1 of the substrate contact portion 210 . In this case, the depth D2 of the annular groove 220 refers to the top surface of the substrate contact portion 210 to the top of the bottom of the annular groove 220 .

Further, as shown in FIG. 20, each of the annular grooves 220a to 220c of the first annular groove group G1 and the annular grooves 220d to 220f of the second annular groove group G2 is divided into a plurality of groove segments in the circumferential direction. good too. The first inner annular groove 220a has a plurality of circumferentially divided first inner groove segments, and the first intermediate annular groove 220b has a plurality of circumferentially divided first intermediate groove segments. and the first outer annular groove 220c has a plurality of circumferentially divided first outer groove segments. The first heat transfer gas supply passage 231a communicates with each of the plurality of first intermediate groove segments. The second inner annular groove 220d has a plurality of circumferentially divided second inner groove segments, and the second intermediate annular groove 220e has a plurality of circumferentially divided second intermediate groove segments. and the second outer annular groove 220f has a plurality of circumferentially divided second outer groove segments. The second heat transfer gas supply holes 231b respectively communicate with the plurality of second intermediate groove segments. Although each of the annular grooves 220a to 220f is divided into four in the illustrated example, the number of divisions is not limited to this.

Claims (18)

a chamber;
a substrate support disposed within the chamber and having at least one first gas supply;
a base;
An electrostatic chuck disposed on the base and having an upper surface,
The upper surface has a plurality of protrusions and a first annular groove group,
The first annular groove group includes a first inner annular groove, a first intermediate annular groove and a first outer annular groove,
the electrostatic chuck, wherein any one of the first inner annular groove, the first intermediate annular groove, and the first outer annular groove communicates with the at least one first gas supply path;
the substrate support having
at least one control valve configured to control the flow rate or pressure of gas supplied through the at least one first gas supply passage;
A substrate processing apparatus comprising: the substrate support further comprises at least one second gas supply channel;
the upper surface of the electrostatic chuck further has a second annular groove group surrounding the first annular groove group;
The second annular groove group includes a second inner annular groove, a second intermediate annular groove and a second outer annular groove,
any one of the second inner annular groove, the second intermediate annular groove, and the second outer annular groove communicates with the at least one second gas supply path;
wherein the at least one control valve is configured to control the flow rate or pressure of gas supplied via the at least one first gas supply line and the at least one second gas supply line;
The substrate processing apparatus according to claim 1. The at least one control valve is
a first control valve configured to independently control the flow rate or pressure of a gas supplied through the at least one first gas supply passage;
a second control valve configured to independently control the flow rate or pressure of the gas supplied via the at least one second gas supply passage;
3. The substrate processing apparatus of claim 2, comprising: The substrate support further has at least one third gas supply channel,
the upper surface of the electrostatic chuck further has a third annular groove group surrounding the second annular groove group;
The third annular groove group includes a third inner annular groove and a third outer annular groove,
one of the third inner annular groove and the third outer annular groove communicates with the at least one third gas supply path;
The at least one control valve controls the flow rate of gas supplied through the at least one first gas supply path, the at least one second gas supply path, and the at least one third gas supply path, or configured to control the pressure;
The substrate processing apparatus according to claim 2. The at least one control valve is
a first control valve configured to independently control the flow rate or pressure of a gas supplied through the at least one first gas supply passage;
a second control valve configured to independently control the flow rate or pressure of the gas supplied via the at least one second gas supply passage;
a third control valve configured to independently control the flow rate or pressure of the gas supplied via the at least one third gas supply passage;
5. The substrate processing apparatus of claim 4, comprising: The first annular groove group, the second annular groove group and the third annular groove group have a circular shape,
The substrate processing apparatus according to claim 4. The first annular groove group and the second annular groove group have a polygonal shape,
The substrate processing apparatus according to claim 4. The first annular groove group and the second annular groove group have centrally asymmetric shapes,
The substrate processing apparatus according to claim 4. the first inner annular groove having a plurality of circumferentially divided first inner groove segments;
The first intermediate annular groove has a plurality of circumferentially divided first intermediate groove segments,
the first outer annular groove has a plurality of circumferentially divided first outer groove segments;
the at least one first gas supply passage includes a plurality of first gas supply passages respectively communicating with the plurality of first intermediate groove segments;
The substrate processing apparatus according to claim 1. the second inner annular groove has a plurality of circumferentially divided second inner groove segments;
the second intermediate annular groove has a plurality of second intermediate groove segments divided in the circumferential direction;
the second outer annular groove has a plurality of circumferentially divided second outer groove segments;
the at least one second gas supply passage includes a plurality of second gas supply passages respectively communicating with the plurality of second intermediate groove segments;
The substrate processing apparatus according to claim 2. a chuck body having a top surface and at least one first gas feed;
The upper surface is
a plurality of protrusions;
A first annular groove group including a first inner annular groove, a first intermediate annular groove and a first outer annular groove, wherein the first inner annular groove, the first intermediate annular groove and the first any of the outer annular grooves of the first group of annular grooves communicating with the at least one first gas supply passage. the chuck body further having at least one second gas supply path,
the upper surface of the chuck body further has a second annular groove group surrounding the first annular groove group;
The second annular groove group includes a second inner annular groove, a second intermediate annular groove and a second outer annular groove,
any one of the second inner annular groove, the second intermediate annular groove, and the second outer annular groove communicates with the at least one second gas supply passage;
The electrostatic chuck of Claim 11. the chuck body further has at least one third gas supply path,
the upper surface of the chuck body further has a third annular groove group surrounding the second annular groove group;
The third annular groove group includes a third inner annular groove and a third outer annular groove,
one of the third inner annular groove and the third outer annular groove communicates with the at least one third gas supply channel;
The electrostatic chuck of Claim 12. The first annular groove group, the second annular groove group and the third annular groove group have a circular shape,
14. The electrostatic chuck of Claim 13. The first annular groove group and the second annular groove group have a polygonal shape,
14. The electrostatic chuck of Claim 13. The first annular groove group and the second annular groove group have centrally asymmetric shapes,
14. The electrostatic chuck of Claim 13. the first inner annular groove having a plurality of circumferentially divided first inner groove segments;
The first intermediate annular groove has a plurality of circumferentially divided first intermediate groove segments,
the first outer annular groove has a plurality of circumferentially divided first outer groove segments;
12. The electrostatic chuck of claim 11, wherein the at least one first gas supply passage comprises a plurality of first gas supply passages respectively communicating with the plurality of first intermediate groove segments. the second inner annular groove has a plurality of circumferentially divided second inner groove segments;
the second intermediate annular groove has a plurality of second intermediate groove segments divided in the circumferential direction;
the second outer annular groove has a plurality of circumferentially divided second outer groove segments;
the at least one second gas supply passage includes a plurality of second gas supply passages respectively communicating with the plurality of second intermediate groove segments;
The electrostatic chuck of Claim 12.

Images