JP2022540515A - 高出力用途のための横方向励起フィルムバルク音響共振器 - Google Patents

高出力用途のための横方向励起フィルムバルク音響共振器 Download PDF

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Publication number
JP2022540515A
JP2022540515A JP2022518002A JP2022518002A JP2022540515A JP 2022540515 A JP2022540515 A JP 2022540515A JP 2022518002 A JP2022518002 A JP 2022518002A JP 2022518002 A JP2022518002 A JP 2022518002A JP 2022540515 A JP2022540515 A JP 2022540515A
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Japan
Prior art keywords
thickness
piezoelectric plate
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equal
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Pending
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JP2022518002A
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English (en)
Japanese (ja)
Inventor
ブライアント ガルシア
ロバート ハモンド
パトリック ターナー
ニール フェンツィ
ヴィクター プレスキ
ヴェントシスラフ ヤンチェフ
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Resonant Inc
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Resonant Inc
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Publication date
Priority claimed from US16/578,811 external-priority patent/US10637438B2/en
Application filed by Resonant Inc filed Critical Resonant Inc
Publication of JP2022540515A publication Critical patent/JP2022540515A/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02228Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02015Characteristics of piezoelectric layers, e.g. cutting angles
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02086Means for compensation or elimination of undesirable effects
    • H03H9/02125Means for compensation or elimination of undesirable effects of parasitic elements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02157Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • H03H9/13Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/131Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174Membranes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/178Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator of a laminated structure of multiple piezoelectric layers with inner electrodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/54Filters comprising resonators of piezoelectric or electrostrictive material
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/54Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56Monolithic crystal filters
    • H03H9/564Monolithic crystal filters implemented with thin-film techniques
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/54Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56Monolithic crystal filters
    • H03H9/566Electric coupling means therefor
    • H03H9/568Electric coupling means therefor consisting of a ladder configuration

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
JP2022518002A 2019-09-23 2020-10-08 高出力用途のための横方向励起フィルムバルク音響共振器 Pending JP2022540515A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/578,811 US10637438B2 (en) 2018-06-15 2019-09-23 Transversely-excited film bulk acoustic resonators for high power applications
PCT/US2020/054811 WO2021062421A1 (en) 2019-09-23 2020-10-08 Transversely-excited film bulk acoustic resonators for high power applications

Publications (1)

Publication Number Publication Date
JP2022540515A true JP2022540515A (ja) 2022-09-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022518002A Pending JP2022540515A (ja) 2019-09-23 2020-10-08 高出力用途のための横方向励起フィルムバルク音響共振器

Country Status (4)

Country Link
JP (1) JP2022540515A (de)
CN (5) CN116545408A (de)
DE (1) DE112020004488B8 (de)
WO (1) WO2021062421A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024043344A1 (ja) * 2022-08-26 2024-02-29 株式会社村田製作所 弾性波装置
WO2024055388A1 (en) * 2022-09-14 2024-03-21 Huawei Technologies Co., Ltd. Acoustic resonator

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017188342A1 (ja) * 2016-04-27 2017-11-02 京セラ株式会社 弾性波素子および通信装置
WO2020100744A1 (ja) * 2018-11-16 2020-05-22 株式会社村田製作所 弾性波装置
US20200295729A1 (en) * 2019-03-14 2020-09-17 Resonant Inc. Transversely-excited film bulk acoustic resonator with partial bragg reflectors
US20200304091A1 (en) * 2018-06-15 2020-09-24 Resonant Inc. Solidly-mounted transversely-excited film bulk acoustic resonator with diamond layers in bragg reflector stack

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5601377B2 (ja) * 2010-11-30 2014-10-08 株式会社村田製作所 弾性波装置及びその製造方法
CN106664072A (zh) * 2014-07-31 2017-05-10 天工滤波方案日本有限公司 声波滤波器和使用其的双工器
JP2017224890A (ja) 2016-06-13 2017-12-21 株式会社村田製作所 弾性波装置
US10491192B1 (en) 2018-06-15 2019-11-26 Resonant Inc. Transversely-excited film bulk acoustic resonator
CN113765495A (zh) * 2020-05-19 2021-12-07 谐振公司 用于大功率应用的使用yx切割的铌酸锂的横向激励的薄膜体声波谐振器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017188342A1 (ja) * 2016-04-27 2017-11-02 京セラ株式会社 弾性波素子および通信装置
US20200304091A1 (en) * 2018-06-15 2020-09-24 Resonant Inc. Solidly-mounted transversely-excited film bulk acoustic resonator with diamond layers in bragg reflector stack
WO2020100744A1 (ja) * 2018-11-16 2020-05-22 株式会社村田製作所 弾性波装置
US20200295729A1 (en) * 2019-03-14 2020-09-17 Resonant Inc. Transversely-excited film bulk acoustic resonator with partial bragg reflectors

Also Published As

Publication number Publication date
WO2021062421A1 (en) 2021-04-01
CN115004548A (zh) 2022-09-02
CN115004548B (zh) 2023-05-26
CN116545407A (zh) 2023-08-04
CN116545406A (zh) 2023-08-04
DE112020004488T5 (de) 2022-10-13
DE112020004488B4 (de) 2023-05-25
CN116545405A (zh) 2023-08-04
CN116545408A (zh) 2023-08-04
DE112020004488B8 (de) 2023-08-03

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