JP2022527460A5 - - Google Patents
Info
- Publication number
- JP2022527460A5 JP2022527460A5 JP2021557313A JP2021557313A JP2022527460A5 JP 2022527460 A5 JP2022527460 A5 JP 2022527460A5 JP 2021557313 A JP2021557313 A JP 2021557313A JP 2021557313 A JP2021557313 A JP 2021557313A JP 2022527460 A5 JP2022527460 A5 JP 2022527460A5
- Authority
- JP
- Japan
- Prior art keywords
- power level
- supplying
- range
- substrate
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024182320A JP2025011281A (ja) | 2019-03-25 | 2024-10-18 | 高エッチング選択性かつ低応力のアッシャブルカーボンハードマスク |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962823211P | 2019-03-25 | 2019-03-25 | |
| US62/823,211 | 2019-03-25 | ||
| PCT/US2020/023239 WO2020197866A1 (en) | 2019-03-25 | 2020-03-18 | High etch selectivity, low stress ashable carbon hard mask |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024182320A Division JP2025011281A (ja) | 2019-03-25 | 2024-10-18 | 高エッチング選択性かつ低応力のアッシャブルカーボンハードマスク |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022527460A JP2022527460A (ja) | 2022-06-02 |
| JP2022527460A5 true JP2022527460A5 (https=) | 2023-03-08 |
| JP7576040B2 JP7576040B2 (ja) | 2024-10-30 |
Family
ID=72611097
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021557313A Active JP7576040B2 (ja) | 2019-03-25 | 2020-03-18 | 高エッチング選択性かつ低応力のアッシャブルカーボンハードマスク |
| JP2024182320A Pending JP2025011281A (ja) | 2019-03-25 | 2024-10-18 | 高エッチング選択性かつ低応力のアッシャブルカーボンハードマスク |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024182320A Pending JP2025011281A (ja) | 2019-03-25 | 2024-10-18 | 高エッチング選択性かつ低応力のアッシャブルカーボンハードマスク |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US12062537B2 (https=) |
| JP (2) | JP7576040B2 (https=) |
| KR (2) | KR20250174991A (https=) |
| CN (2) | CN118773572A (https=) |
| TW (2) | TWI856077B (https=) |
| WO (1) | WO2020197866A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113891954B (zh) * | 2019-05-29 | 2025-09-19 | 朗姆研究公司 | 通过高功率脉冲低频率rf产生的高选择性、低应力、且低氢的类金刚石碳硬掩模 |
| CN114342043A (zh) | 2019-08-30 | 2022-04-12 | 朗姆研究公司 | 低压下的高密度、模量和硬度的非晶碳膜 |
| US11421324B2 (en) * | 2020-10-21 | 2022-08-23 | Applied Materials, Inc. | Hardmasks and processes for forming hardmasks by plasma-enhanced chemical vapor deposition |
| US11699585B2 (en) * | 2020-10-21 | 2023-07-11 | Applied Materials, Inc. | Methods of forming hardmasks |
| JP2022097936A (ja) * | 2020-12-21 | 2022-07-01 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
| JP7638727B2 (ja) * | 2021-02-22 | 2025-03-04 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| US12272565B2 (en) * | 2021-12-10 | 2025-04-08 | Nanya Technology Corporation | Method for preparing semiconductor structure |
| US12607924B2 (en) | 2021-12-10 | 2026-04-21 | Nanya Technology Corporation | Hardmask structure for preparing semiconductor structure |
| JP2024126187A (ja) * | 2023-03-07 | 2024-09-20 | 東京エレクトロン株式会社 | 基板処理方法 |
| WO2024263467A1 (en) * | 2023-06-23 | 2024-12-26 | Lam Research Corporation | Selective etch of a stack with a carbon containing mask |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5976993A (en) | 1996-03-28 | 1999-11-02 | Applied Materials, Inc. | Method for reducing the intrinsic stress of high density plasma films |
| GB2342660B (en) * | 1998-10-12 | 2000-09-27 | Univ Houston | Process for producing a carbon film on a substrate |
| US6573030B1 (en) | 2000-02-17 | 2003-06-03 | Applied Materials, Inc. | Method for depositing an amorphous carbon layer |
| US6939808B2 (en) | 2002-08-02 | 2005-09-06 | Applied Materials, Inc. | Undoped and fluorinated amorphous carbon film as pattern mask for metal etch |
| US6989332B1 (en) * | 2002-08-13 | 2006-01-24 | Advanced Micro Devices, Inc. | Ion implantation to modulate amorphous carbon stress |
| US6750127B1 (en) * | 2003-02-14 | 2004-06-15 | Advanced Micro Devices, Inc. | Method for fabricating a semiconductor device using amorphous carbon having improved etch resistance |
| US7323401B2 (en) * | 2005-08-08 | 2008-01-29 | Applied Materials, Inc. | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask |
| US8567420B2 (en) | 2008-03-31 | 2013-10-29 | Kabushiki Kaisha Toshiba | Cleaning apparatus for semiconductor wafer |
| US9076646B2 (en) * | 2010-04-15 | 2015-07-07 | Lam Research Corporation | Plasma enhanced atomic layer deposition with pulsed plasma exposure |
| US8728956B2 (en) | 2010-04-15 | 2014-05-20 | Novellus Systems, Inc. | Plasma activated conformal film deposition |
| US8361906B2 (en) | 2010-05-20 | 2013-01-29 | Applied Materials, Inc. | Ultra high selectivity ashable hard mask film |
| US20120276743A1 (en) | 2011-04-26 | 2012-11-01 | Jai-Hyung Won | Methods of forming a carbon type hard mask layer using induced coupled plasma and methods of forming patterns using the same |
| US9194045B2 (en) | 2012-04-03 | 2015-11-24 | Novellus Systems, Inc. | Continuous plasma and RF bias to regulate damage in a substrate processing system |
| US9589799B2 (en) | 2013-09-30 | 2017-03-07 | Lam Research Corporation | High selectivity and low stress carbon hardmask by pulsed low frequency RF power |
| US9320387B2 (en) | 2013-09-30 | 2016-04-26 | Lam Research Corporation | Sulfur doped carbon hard masks |
| US20150200094A1 (en) | 2014-01-10 | 2015-07-16 | Applied Materials, Inc. | Carbon film stress relaxation |
| US10745282B2 (en) | 2017-06-08 | 2020-08-18 | Applied Materials, Inc. | Diamond-like carbon film |
| WO2018226370A1 (en) * | 2017-06-08 | 2018-12-13 | Applied Materials, Inc. | High-density low temperature carbon films for hardmask and other patterning applications |
-
2020
- 2020-03-18 US US17/439,948 patent/US12062537B2/en active Active
- 2020-03-18 KR KR1020257039645A patent/KR20250174991A/ko active Pending
- 2020-03-18 CN CN202410678644.XA patent/CN118773572A/zh active Pending
- 2020-03-18 CN CN202080024547.9A patent/CN113710829B/zh active Active
- 2020-03-18 WO PCT/US2020/023239 patent/WO2020197866A1/en not_active Ceased
- 2020-03-18 JP JP2021557313A patent/JP7576040B2/ja active Active
- 2020-03-18 KR KR1020217034243A patent/KR102893323B1/ko active Active
- 2020-03-23 TW TW109109539A patent/TWI856077B/zh active
- 2020-03-23 TW TW113131203A patent/TW202449203A/zh unknown
-
2024
- 2024-08-06 US US18/796,246 patent/US20240395542A1/en active Pending
- 2024-10-18 JP JP2024182320A patent/JP2025011281A/ja active Pending
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