JP2022512302A5 - - Google Patents

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Publication number
JP2022512302A5
JP2022512302A5 JP2021529313A JP2021529313A JP2022512302A5 JP 2022512302 A5 JP2022512302 A5 JP 2022512302A5 JP 2021529313 A JP2021529313 A JP 2021529313A JP 2021529313 A JP2021529313 A JP 2021529313A JP 2022512302 A5 JP2022512302 A5 JP 2022512302A5
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JP
Japan
Prior art keywords
workpiece
scanning
ion beam
scanner
implantation system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021529313A
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English (en)
Japanese (ja)
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JP7474255B2 (ja
JP2022512302A (ja
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Publication date
Priority claimed from US16/218,884 external-priority patent/US10553392B1/en
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Publication of JP2022512302A publication Critical patent/JP2022512302A/ja
Publication of JP2022512302A5 publication Critical patent/JP2022512302A5/ja
Application granted granted Critical
Publication of JP7474255B2 publication Critical patent/JP7474255B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2021529313A 2018-12-13 2019-11-06 イオン注入システムおよび方法 Active JP7474255B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/218,884 2018-12-13
US16/218,884 US10553392B1 (en) 2018-12-13 2018-12-13 Scan and corrector magnet designs for high throughput scanned beam ion implanter
PCT/US2019/060084 WO2020123063A1 (en) 2018-12-13 2019-11-06 Scan and corrector magnet designs for high throughput scanned beam ion implanter

Publications (3)

Publication Number Publication Date
JP2022512302A JP2022512302A (ja) 2022-02-03
JP2022512302A5 true JP2022512302A5 (enExample) 2023-10-26
JP7474255B2 JP7474255B2 (ja) 2024-04-24

Family

ID=69160019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021529313A Active JP7474255B2 (ja) 2018-12-13 2019-11-06 イオン注入システムおよび方法

Country Status (6)

Country Link
US (2) US10553392B1 (enExample)
JP (1) JP7474255B2 (enExample)
KR (1) KR102751449B1 (enExample)
CN (1) CN113169011B (enExample)
TW (1) TWI827743B (enExample)
WO (1) WO2020123063A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170005013A1 (en) * 2015-06-30 2017-01-05 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Technique
US10553392B1 (en) * 2018-12-13 2020-02-04 Axcelis Technologies, Inc. Scan and corrector magnet designs for high throughput scanned beam ion implanter
US11217427B1 (en) * 2020-11-27 2022-01-04 Applied Materials, Inc. System, apparatus and method for bunched ribbon ion beam
US11560995B1 (en) 2021-07-28 2023-01-24 Hyundai Mobis Co., Ltd. Lamp for vehicle and vehicle including the same
CN117476431B (zh) * 2023-12-28 2024-04-12 杭州泽天春来科技股份有限公司 四极杆射频电源扫描控制方法、系统及可读存储介质

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4922106A (en) 1986-04-09 1990-05-01 Varian Associates, Inc. Ion beam scanning method and apparatus
US5834786A (en) * 1996-07-15 1998-11-10 Diamond Semiconductor Group, Inc. High current ribbon beam ion implanter
JP3567749B2 (ja) * 1998-07-22 2004-09-22 日新電機株式会社 荷電粒子ビームの分布測定方法およびそれに関連する方法
US7550751B2 (en) * 2006-04-10 2009-06-23 Axcelis Technologies, Inc. Ion beam scanning control methods and systems for ion implantation uniformity
US7615763B2 (en) * 2006-09-19 2009-11-10 Axcelis Technologies, Inc. System for magnetic scanning and correction of an ion beam
WO2009045722A1 (en) * 2007-09-28 2009-04-09 Varian Semiconductor Equipment Associates, Inc. Two-diemensional uniformity correction for ion beam assisted etching
US8138484B2 (en) * 2010-04-28 2012-03-20 Axcelis Technologies Inc. Magnetic scanning system with improved efficiency
US20110272567A1 (en) * 2010-05-05 2011-11-10 Axcelis Technologies, Inc. Throughput Enhancement for Scanned Beam Ion Implanters
US8637838B2 (en) * 2011-12-13 2014-01-28 Axcelis Technologies, Inc. System and method for ion implantation with improved productivity and uniformity
CN102779711B (zh) * 2012-08-01 2014-11-05 西安工业大学 具有超大离子束发散角的离子源
US9029811B1 (en) * 2013-10-22 2015-05-12 Varian Semiconductor Equipment Associates, Inc. Apparatus to control an ion beam
US9520204B2 (en) * 2013-12-26 2016-12-13 Varian Semiconductor Equipment Associates, Inc. Cold stripper for high energy ion implanter with tandem accelerator
JP6195538B2 (ja) * 2014-04-25 2017-09-13 住友重機械イオンテクノロジー株式会社 イオン注入方法及びイオン注入装置
TW201635326A (zh) * 2014-12-26 2016-10-01 艾克塞利斯科技公司 在具有射束減速的離子植入器中用於射束角度調整的系統及方法
US9679739B2 (en) 2014-12-26 2017-06-13 Axcelis Technologies, Inc. Combined electrostatic lens system for ion implantation
US9738968B2 (en) * 2015-04-23 2017-08-22 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controlling implant process
US9728371B2 (en) * 2015-05-27 2017-08-08 Nissin Ion Equipment Co., Ltd. Ion beam scanner for an ion implanter
JP6517163B2 (ja) * 2016-03-18 2019-05-22 住友重機械イオンテクノロジー株式会社 イオン注入装置及びスキャン波形作成方法
US10553392B1 (en) * 2018-12-13 2020-02-04 Axcelis Technologies, Inc. Scan and corrector magnet designs for high throughput scanned beam ion implanter

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