JP2022173975A - Paramagnetic or diamagnetic elements converted into ferromagnetism, their oxides, compounds and their alloys, semiconductor pigment and ferromagnet, or quantum computer with quantum circuit composed of ferrimagnet - Google Patents

Abstract

To provide a method for creating a quantum computer that can be created at a room temperature and on a scalable scale for general use.SOLUTION: In a method of creating a quantum computer with a quantum circuit, by ferromagnetically converted paramagnetic and diamagnetic elements and their oxides, compounds and their alloy or carbon materials and ferromagnetic Ni, Mn, Fe, Co, and Cr oxides 4, a semiconductor pigment 5 of a III-V group compound semiconductor, a II-IV group compound semiconductor, or a IV-VI group compound semiconductor that produces photosensitivity and light emission by excitons, and ferromagnets and ferrimagnets, when magnetic fields are applied 7 at the same time, including a case in which microwaves, terahertz waves 3, and combinion thereof are used for thin films and laminated thin films 1, fluid, or structures in which thin films and fluid are laminated, and a case in which microwaves, terahertz waves, and combinations thereof are used for quantum circuits that simultaneously apply magnetic fields, calculation is performed by controlling intensity of microwave, terahertz wave, and magnetic field.SELECTED DRAWING: Figure 2

Description

The present invention relates to the technology of quantum circuits in quantum computers that can be made at room temperature and on a scale that is normally usable, ie, on a scalable scale. It is a technology related to a quantum computer with a quantum circuit in which the decoherence time is very long due to the superposition state of the spins of the magnetic material, or the state of the spin superposition of the magnetic material can hold a permanent quantum state. . Quantum computers are already known to perform calculations using the principle of superposition of spins in quantum mechanics. Conventionally known technologies are nuclear magnetic resonance computers, ion trap computers, quantum dot computers, photon computers, and computers based on superconducting devices.

In either method, the quantum state by spin superposition is limited to about 10 seconds, and the quantum state by spin superposition cannot be maintained permanently. The decoherence time, which enables quantum computation, is about 10 seconds or less. Quantum computers using ion trap computers and superconducting devices also require cryogenic conditions. A photon computer requires a very large scale and is not scalable for use as a quantum computer.

The present invention provides ferromagnetically converted paramagnetic and diamagnetic elements, their oxides, compounds and their alloys or carbon materials, ferromagnetic Ni, Mn, Fe, Co and Cr oxides and excitons. Namely, semiconductor pigments of III-V group compound semiconductors, II-IV group compound semiconductors, and IV-VI group compound semiconductors that produce photosensitivity and light emission by excitons, ferromagnets, and thin films and laminated thin films of ferrimagnetic substances , Microwaves or terahertz waves, quantum circuits and microwaves that apply both microwaves and terahertz waves to a structure in which a fluid or a thin film and a fluid are layered and a magnetic field is applied at the same time, microwaves , controlling the intensity of terahertz waves and magnetic fields, ferromagnets, ferrimagnets magnetic resonance and ferromagnetism converted paramagnetic and diamagnetic elements, their oxides, compounds and their alloys or carbon materials, It is a technology for creating a quantum computer with a quantum circuit that performs calculations by the rotation and superposition of magnetic spins due to the interaction with the magnetoplasmon effect of ferromagnetic Ni, Mn, Fe, Co, and Cr oxides. , the potential of the signal indicated by the quantum circuit is converted to a ferromagnetically converted paramagnetic or diamagnetic element, its oxide, compound and its alloy or carbon material, ferromagnetic Ni, An electrode is used from semiconductor pigments of III-V group compound semiconductors, II-IV group compound semiconductors, and IV-VI group compound semiconductors that produce photosensitivity and light emission by oxides of Mn, Fe, Co, and Cr and excitons. how to read out. It is a method of initializing a quantum circuit by applying a laser, an electric field, or an electric field and a magnetic field, used in a quantum computer.

The applicant has proposed that paramagnetic and diamagnetic elements, their oxides, compounds and their alloys or fine particles of oxides of ferromagnetic Ni, Mn, Fe, Co and Cr are ferromagnetically converted. Then, when a surfactant is added to a liquid characterized by containing a ferromagnetic substance, a ferrimagnetic substance, and a polyphenol such as red wine, and heated with microwaves, the magnetoplasmon effect of the ferromagnetically converted fine particles and the ferromagnetic substance , interacting with magnetic resonance by fine particles of ferrimagnetic material to create a superfluid state due to Bose-Einstein condensation, which is a quantum state, and the photoelectric effect of semiconductor pigments containing polyphonol liquids and surfactants, At the contact interface between the semiconductor pigment, the polyphenol liquid, and the surfactant, a charged substance is generated by an oxidation-reduction reaction. Formation results in photosensitivity. It is shown in Japanese Patent No. 6264576, International Patent Application No. PCT/JP2014/053826, that the photosensitivity caused by excitons is amplified by the magnetoplasmon electric field.

The present invention provides ferromagnetically converted paramagnetic and diamagnetic elements, their oxides, compounds and their alloys or carbon materials, ferromagnetic Ni, Mn, Fe, Co and Cr oxides and excitons. Namely, semiconductor pigments of III-V group compound semiconductors, II-IV group compound semiconductors, and IV-VI group compound semiconductors that produce photosensitivity and light emission by excitons, ferromagnets, and thin films and laminated thin films of ferrimagnetic substances , including the case where microwaves or terahertz waves, microwaves and terahertz waves are used in combination with a fluid or a structure in which a thin film and a fluid are laminated, and a magnetic effect due to magnetic resonance of ferromagnets and ferrimagnets by applying a magnetic field at the same time Ferromagnetically converted paramagnetic and diamagnetic elements, their oxides, compounds and their alloys or carbon materials, ferromagnetic Ni, Mn, Fe, Co and Cr oxides with the magnetoplasmon effect Quantum circuit composed of rotation and superposition of magnetic spins due to interaction, and when microwaves, terahertz waves and magnetic fields are applied at the same time, control the strength of microwaves, terahertz waves and magnetic fields to create ferromagnets and ferrimagnets and the magnetic effect of ferromagnetically converted paramagnetic and diamagnetic elements, their oxides, compounds and their alloys or carbon materials, and ferromagnetic Ni, Mn, Fe, Co, and Cr A technology for creating a quantum computer with a quantum circuit that performs calculations by manipulating the rotation and superposition of magnetic spins through interaction with the magnetoplasmon effect of oxides. The potential of the signal indicating the potential of the ferromagnetically converted paramagnetic and diamagnetic elements and their oxides, or carbon materials, ferromagnetic Ni, Mn, Fe, Co, Cr oxides and excitons, i.e. excitation A method of reading out from semiconductor pigments of III-V group compound semiconductors, II-IV group compound semiconductors, and IV-VI group compound semiconductors in which photosensitivity and light emission are generated by electrons using electrodes. It is a method of initializing a quantum circuit by applying a laser, an electric field, or an electric field and a magnetic field, used in a quantum computer.

Problems to be Solved by the Invention

The reasons why it is difficult to put conventional quantum computers into practical use are that the quantum state in which the spins are superimposed in the quantum gate of the quantum computer is within a few seconds and has no permanence. In a conductive element, the quantum state in which spin superposition occurs is limited to within several seconds, and calculation and processing must be completed within that time, making permanent information processing difficult. In the case of ion traps and superconducting devices, the thermal noise must be minimized at cryogenic temperatures, making their commercial use difficult. A nuclear magnetic resonance computer can be used at room temperature, but due to thermal noise, the decoherence time is about 10 seconds, and information processing can normally be maintained for only about 10 seconds. A photon computer cannot permanently maintain a quantum state in which spin superposition occurs.
The present invention relates to the technology of quantum circuits in quantum computers that can be made at room temperature and on a scale that is normally usable, ie, on a scalable scale. It is a technology related to a quantum computer with a quantum circuit in which the decoherence time is very long due to the superposition state of the spins of the magnetic material, or the state of the spin superposition of the magnetic material can hold a permanent quantum state. .

Means to solve problems

Microwaves and magnetic fields are applied to ferromagnetically converted paramagnetic and diamagnetic elements, their oxides, compounds and their alloys or carbon materials, ferromagnetic Ni, Mn, Fe, Co, and Cr oxides. In the photoelectric effect of the semiconductor pigment containing the polyphenol liquid and the surfactant, oxidation occurs at the contact interface between the semiconductor pigment, the polyphenol liquid, and the surfactant. Photosensitivity is caused by the production of charged substances by a reduction reaction, and the recombination of the charged substances at the interface of the semiconductor pigment with the electrons and holes of the semiconductor pigment to form excitons. Photosensitivity produced by excitons is amplified by magnetoplasmon electric fields, as shown in Japanese Patent No. 6264576, International Patent Application No. PCT/JP2014/053826. Magnetic fine particles or ferrimagnetic fine particles, paramagnetic or diamagnetic elements that have undergone ferromagnetic conversion with magnetic or ferrimagnetic thin films, their oxides, compounds and their alloys or carbon materials, Semiconductors of III-V group compound semiconductors, II-IV group compound semiconductors, and IV-VI group compound semiconductors in which photosensitivity and light emission are generated by magnetic Ni, Mn, Fe, Co, and Cr oxides and excitons Quantum gates are designed to inter-arrange the pigments in thin films. III-V group compound semiconductors that generate photosensitivity and light emission by the magnetoplasmon effect and excitons of ferromagnetically converted fine particles when irradiated to a quantum gate, including the case of applying microwaves, terahertz waves, and a magnetic field at the same time; Magnetoplasmon effect and magnetic resonance of fine particles of magnetic material or ferrimagnetic material, which are amplified by semiconductor pigments of II-IV compound semiconductors and IV-VI compound semiconductors, interact with each other to ferromagnetically convert magnetic spins of fine particles constitutes a quantum circuit based on a quantum gate or a quantum Ising model, characterized in that a state of rotation and superposition occurs.
The interaction of spins due to the magnetoplasmon effect and magnetic resonance is in the far-infrared and terahertz waveband (wavelength 10 μm to 200 μm). Quantum circuits and quantum gates by spin rotation using microwaves can be operated in units of nanoseconds because microwaves are in the GHz band (wavelength 1 cm to 20 cm). Use terahertz waves or use microwaves and terahertz waves together. Since the operation of quantum circuits and quantum gates by spin rotation due to the magnetoplasmon effect is in the THz band, it can be operated in units of picoseconds to femtoseconds. By using terahertz waves and microwaves and terahertz waves together, it is possible to operate at a speed 100 times or more faster than that of quantum circuits and quantum gates using only microwaves.

Ｂ；印加されたすべての磁場エネルギー Ｈ；印加された静磁場 ｈ；マイクロ波又はテラヘルツ波の入射エネルギー Ｐ；強磁性体、フェリ磁性体の薄膜又は磁性流体のエネルギー π；円周率 γ；ジャイロ磁気定数 ｇ；ｇ因数 μ_Ｂ；ボーア磁気定数 ｎｋ；励起し遷移したの強磁性体、フェリ磁性体の薄膜又は磁性流体のスピンの数、Ｍ_Ｓ；印加された磁場エネルギーＢによる強磁性体、フェリ磁性体の薄膜又は磁性流体の自発磁化
常磁性体のＴｉ、Ｖ、Ｐｔ、Ｓｎ、Ｗ、Ａｉ、Ｚｒ、Ｎｄ、Ｍｏ、Ｐｄ、反磁性体のＣｕ、Ｚｎ、Ｓｉ、Ａｇ、Ｃｄ、Ｓｅ、Ｓｎ、Ａｕ、Ｈｇ、Ｓｂ、Ｉｎ、Ｂｉ、Ｐの元素並びに、その酸化物、その元素が主成分となっている化合物並びにその合金の微粒子、強磁性のＮｉ，Ｍｎ，Ｆｅ，Ｃｏ，Ｃｒの磁性を示さない酸化化合物の微粒子が強磁性に転換したときのスピンサイクロトロン周波数ω_ｃは数式２で示される。

ω_ｃ；スピンサイクロトロン周波数ｅ；電荷 Ｂ；印加されたすべての磁場エネルギー ｍ；自由電子の質量 ｃ；光の速度
常磁性体のＴｉ、Ｖ、Ｐｔ、Ｓｎ、Ｗ、Ａｌ、Ｚｒ、Ｎｄ、Ｍｏ、Ｐｄ、反磁性体のＣｕ、Ｚｎ、Ｓｉ、Ａｇ、Ｃｄ、Ｓｅ、Ｓｎ、Ａｕ、Ｈｇ、Ｓｂ、Ｉｎ、Ｂｉ、Ｐの元素並びに、その酸化物、その元素が主成分となっている化合物並びにその合金の微粒子、強磁性のＮｉ、Ｍｎ，Ｆｅ，Ｃｏ、Ｃｒの磁性を示さない酸化化合物の微粒子のプラズモン周波数ω_ｐは数式３で示される。

ω_ｐプラズモン周波数π；円周率 ｎ；微粒子の自由電子の密度ｍ；自由電子の質量
数式２のスピンサイクロトロン周波数ω_ｃと数式３のプラズモン周波数ω_ｐを用いて、常磁性体のＴｉ、Ｖ、Ｐｔ、Ｓｎ、Ｗ、Ａｌ、Ｚｒ、Ｎｄ、Ｍｏ、Ｐｄ、反磁性体のＣｕ、Ｚｎ、Ｓｉ、Ａｇ、Ｃｄ、Ｓｅ、Ｓｎ、Ａｕ、Ｈｇ、Ｓｂ、Ｉｎ、Ｂｉ、Ｐの元素並びに、その酸化物、その元素が主成分となっている化合物並びにその合金の微粒子、強磁性のＮｉ、Ｍｎ，Ｆｅ，Ｃｏ、Ｃｒの磁性を示さない酸化化合物の微粒子のマグネトプラズモン周波数ωは数式４の解で表される。

ω_ｐ；プラズモン周波数 ｉ；虚数
マグネトプラズモンの励起によるエネルギーＷは次の数式５で表される。

Ｗ；マグネトプラズモン励起によるエネルギー ｎ；マグネトプラズモン励起数

ＣｄＳｅ化合物微粒子などの半導体顔料のマグネトプラズモン振動数も数式４で表される。
ポリフォノールの液体と界面活性剤を含有した半導体顔料の光電効果において、半導体顔料とポリフェノールの液体と界面活性剤の接触界面において、酸化還元反応によって荷電物質を生成し、半導体顔料の界面の荷電物質と半導体顔料の電子と正孔が再結合しエキシトン（励起子）を形成することによって、光増感度が生じる。エキシトン（励起子）によって生じた光増感度はマグネトプラズモンの電界によって増幅される。その場合の半導体顔料の光増感度のスペクトルは数式６で表される。

ン周波数 Ｅ_ｇ；半導体顔料のバンドギャップ ｆ_ｅ；半導体顔料の電子分布 ｆ_ｈ；半導体顔料の正孔の分布ｍ_ｈ；半導体顔料の正孔の質量 ｍｅ；半導体顔料の電子質量
強磁性転換された反磁性又は常磁性の金属微粒子、ＣｄＳｅ化合物微粒子などの半導体顔料の微粒子のマグネトプラズモンの励起による電場のエネルギーは次の数式７で表される。

Ｅ（ｙ，ｚ，ｔ）；マグネトプラズモン励起による電場のエネルギー（ｙ方向、ｚ方向、ｔ時間），
Ｅ_ｙ；ｙ方向の電場 Ｅ_ｚ；ｚ方向の電場 ｉ；虚数単位 ｋ；マグネトプラズモン振動の波数 ω；マグネトプラズモン振動の周波数
Ｌ；マグネトプラズモンによって励起したｙ方向の電場の伝搬距離
強磁性体、フェリ磁性体の薄膜又は、磁性流体の磁性共鳴によるエネルギーは数式１によって表される。
数式１を（ｘ，ｙ，ｚ）による３次元形式で表示する。
Ｂ（ｘ．ｙ．ｚ）＝Ｈ（ｘ．ｙ．ｚ）＋ｈ（ｓｉｎω_ｈｔ）
Ｐ（ｘ．ｙ．ｚ）＝２πγ（Ｍ_ｓ＋Ｈ（ｘ．ｙ．ｚ））ｈｇμ_Ｂｎ_ｋ＝２πγ（Ｍ_ｓ＋Ｂ（ｘ．ｙ．ｚ）－ｈ（ｓｉｎω_ｈｔ））ｈｇμ_Ｂｎ_ｋ
Ｂ（ｘ，ｙ，ｚ）；ｘ軸方向，ｙ軸方向，ｚ軸方向に印加されたすべての電磁場エネルギー
Ｈ（ｘ，ｙ，ｚ）；ｘ軸方向，ｙ軸方向，ｚ軸方向に印加された静磁場
Ｐ（ｘ，ｙ，ｚ）；ｘ軸方向，ｙ軸方向，ｚ軸方向のＭｎ－Ｚｎ フェライト微粒子の励起エネルギー
強磁性体、フェリ磁性体の薄膜又は磁性流体の磁性共鳴によるエネルギーと強磁性転換された反磁性又は常磁性の金属微粒子、半導体顔料の微粒子のマグネトプラズモンの励起による電場が相互作用したときの量子力学的波動関数
は次の数式８で表される。

量子力学的波動関数によるエネルギーの方程式は次の数式９で表される。

強磁性転換された常磁性体、反磁性体の元素並びに、その酸化物、化合物並びにその合金又は炭素素材、強磁性体のＮｉ，Ｍｎ，Ｆｅ，Ｃｏ，Ｃｒの酸化物にマイクロ波、テラヘルツ波及び磁場を印加しながらマイクロ波、テラヘルツ波を照射するとマグネトプラズモン効果が生じることによる電界及び、ポリフォノールの液体と界面活性剤を含有した半導体顔料の光電効果において、半導体顔料とポリフェノールの液体と界面活性剤の接触界面において、酸化還元反応によって荷電物質を生成し、半導体顔料の界面の荷電物質と半導体顔料の電子と正孔が再結合しエキシトン（励起子）を形成することによって、光増感度が生じる。エキシトン（励起子）によって生じた光増感度によるマグネトプラズモンの電界と強磁性及びフェリ磁性体のマイクロ波による磁性共鳴が相互作用する場合の系のエネルギーΔＥは１ｅＶ帯、おおよそ遠赤外線帯、テラヘルツ帯である。室温による ｋ_ＢＴ，ｋ_Ｂ；ボルツマン定数，Ｔ；室温の絶対温度、より非常に大きく室温における熱効果の影響なく、量子ゲート、量子回路のコヒーレンス状態を維持でき、また量子回路及び、量子ゲートを初期化できる。By irradiating microwaves or terahertz waves while applying a magnetic field from the outside to a thin film of ferromagnetic material, ferrimagnetic material or magnetic fluid, Bose-Einstein condensation due to the quantum spin of the thin film of ferromagnetic material, ferrimagnetic material or magnetic fluid , the microscopic spin quantum effect is amplified to the macroscopic quantum effect by a large number of particles in a ferromagnetic or ferrimagnetic thin film or magnetic fluid, and the spin of a ferromagnetic or ferrimagnetic thin film or magnetic fluid is amplified Resonance, or magnetic resonance, amplifies the energy of ferromagnetic, ferrimagnetic thin films, or magnetic fluids from the incident energy of microwaves or terahertz waves. The energy of the amplified ferromagnet, ferrimagnet thin film or magnetic fluid is expressed by Equation (1).

B; all applied magnetic field energy H; applied static magnetic field h; incident energy of microwave or terahertz wave P; energy of ferromagnet, ferrimagnetic thin film or magnetic fluid π; Bohr magnetic constant _nk ; the number of excited and transitioned ferromagnets, ferrimagnetic thin films or _ferrofluids ; Spontaneous magnetization paramagnetic Ti, V, Pt, Sn, W, Ai, Zr, Nd, Mo, Pd of ferrimagnetic thin film or ferrofluid, diamagnetic Cu, Zn, Si, Ag, Cd, Se , Sn, Au, Hg, Sb, In, Bi, P elements and oxides thereof, compounds containing these elements as main components and fine particles of their alloys, ferromagnetic Ni, Mn, Fe, Co, Cr The spin cyclotron frequency ω _c when the oxide compound fine particles exhibiting no magnetism is converted to ferromagnetism is expressed by Equation (2).

spin cyclotron frequency e; electric charge B; total applied magnetic field energy m; free electron mass _c ; , Pd, diamagnetic Cu, Zn, Si, Ag, Cd, Se, Sn, Au, Hg, Sb, In, Bi, and P elements, oxides thereof, and compounds containing these elements as main components In addition, the plasmon frequency ω _p of fine particles of alloys thereof and fine particles of non-magnetic oxide compounds such as ferromagnetic Ni, Mn, Fe, Co, and Cr is expressed by Equation (3).

ω _{p plasmon} frequency π; circular constant _n ; fine particle free electron density m; free electron mass , Pt, Sn, W, Al, Zr, Nd, Mo, Pd, diamagnetic Cu, Zn, Si, Ag, Cd, Se, Sn, Au, Hg, Sb, In, Bi, P elements and The magnetoplasmon frequency ω of the oxide, the compound containing the element as the main component, the fine particle of the alloy, and the fine particle of the oxide compound that does not exhibit magnetism such as ferromagnetic Ni, Mn, Fe, Co, and Cr is given by Equation 4. is represented by a solution.

ω _p ; plasmon frequency i;

W; energy due to magnetoplasmon excitation n; number of magnetoplasmon excitations

The magnetoplasmon frequency of semiconductor pigments such as CdSe compound fine particles is also expressed by Equation 4.
In the photoelectric effect of a semiconductor pigment containing a polyphenol liquid and a surfactant, a charged substance is generated by an oxidation-reduction reaction at the contact interface between the semiconductor pigment, the polyphenol liquid, and the surfactant, and the charged substance at the interface of the semiconductor pigment and electrons and holes of the semiconductor pigment recombine to form excitons, resulting in photosensitivity. Photosensitivity produced by excitons is amplified by the electric field of the magnetoplasmon. The spectrum of the photosensitivity of the semiconductor pigment in that case is represented by Equation (6).

electron frequency of the semiconductor pigment _{f e} ; electron distribution of the semiconductor pigment f _h ; hole distribution of the semiconductor pigment m _h ; hole mass of the semiconductor pigment me; The energy of the electric field generated by magnetoplasmon excitation of semiconductor pigment fine particles such as diamagnetic or paramagnetic metal fine particles and CdSe compound fine particles is expressed by Equation 7 below.

E (y, z, t); electric field energy due to magnetoplasmon excitation (y direction, z direction, t time),
electric field in the y direction E _z ; electric field in the _z direction i; imaginary unit k; wave number of magnetoplasmon oscillation ω; frequency of magnetoplasmon oscillation L; Energy due to magnetic resonance of a ferrimagnetic thin film or a magnetic fluid is represented by Equation (1).
Represent Equation 1 in three-dimensional form by (x, y, z).
B(x.y.z)=H(x.y.z)+h(sin ω _h t)
P(xyz)=2πγ(M _s +H(xyz)) hgμ _B n _k =2πγ(M _s +B(xyz)−h(sinω _h t)) hgμ _B n _k
B(x, y, z); all electromagnetic field energy H(x, y, z) applied in the x-, y-, and z-directions; applied in the x-, y-, and z-directions static magnetic field P (x, y, z); excitation energy of Mn—Zn ferrite fine particles in the x-, y-, and z-axis directions; The quantum mechanical wave function when interacting with the electric field generated by the magnetoplasmon excitation of the diamagnetic or paramagnetic metal fine particles converted to ferromagnetism or the semiconductor pigment fine particles is expressed by the following equation (8).

An energy equation based on a quantum mechanical wave function is expressed by Equation 9 below.

Microwaves and terahertz waves to ferromagnetically converted paramagnetic and diamagnetic elements, their oxides, compounds and their alloys or carbon materials, and ferromagnetic Ni, Mn, Fe, Co, and Cr oxides. And in the electric field caused by the magnetoplasmon effect caused by irradiating microwaves and terahertz waves while applying a magnetic field, and the photoelectric effect of a semiconductor pigment containing a polyphonol liquid and a surfactant, the interface between the semiconductor pigment and the polyphenol liquid At the contact interface of the activator, a charged substance is generated by an oxidation-reduction reaction, and the charged substance at the interface of the semiconductor pigment and the electrons and holes of the semiconductor pigment recombine to form excitons, resulting in photosensitivity. occurs. The energy ΔE of the system when the electric field of the magnetoplasmon due to the photosensitivity generated by the exciton interacts with the magnetic resonance of the ferromagnetic and ferrimagnetic microwaves is in the 1 eV band, approximately in the far infrared band and the terahertz band. is. k _B T, k _B at room temperature; Boltzmann's constant, T; absolute temperature of room temperature; can be initialized.

αとβは任意の複素数
アダマール（Ｈａｄａｍａｒｄ）変換

αとβは任意の複素数
スピン回転演算子

ｘ，ｙ，ｚ軸のまわりの回転については下記となる。

制御ＮＯＴゲートの対応行列Ｕは

制御演算ゲート Ｕ（φ）は

フレデキンゲートＵは

トッフォリゲートＵは

The structure and theory of quantum gates and quantum gates produced by the present invention are described, forming quantum circuits.
phase gate

α and β are arbitrary complex Hadamard transforms

α and β are arbitrary complex spin rotation operators

For rotation around the x, y, z axes:

The correspondence matrix U of the controlled NOT gate is

The control operation gate U(φ) is

Fredeking Gate U

Toffori Gate U

Controlled NOT gates, Fredeking gates, and Toffori gates, which only have 1 and 0 operations, can be made with semiconductor circuits used in conventional classical computers.
Quantum circuits created in the present invention are quantum circuits of phase gates, Hadamard transforms, spin rotation operators, and control operation gates. In phase gates, Hadamard transforms, spin rotation operators, and control operation gates, only 1 and 0 operations other than spin rotation and superposition quantum states are conventionally used in classical computers. use a semiconductor device that A quantum computer is created by combining a quantum circuit created by the present invention and a controlled NOT gate, a Fredeking gate, and a Toffoli gate created by a conventional semiconductor circuit in which there are only 1 and 0 operations.
Phase gates, spin rotation operators, and control operation gates are paramagnetic and diamagnetic elements that undergo magnetic resonance and ferromagnetism conversion by ferromagnetic or ferrimagnetic thin films or fluids, and their oxides, compounds, and When a microwave, a terahertz wave, and a magnetic field are applied to the alloy, carbon material, or oxides of ferromagnetic Ni, Mn, Fe, Co, and Cr, a magnetoplasmon effect occurs, It is created by the rotation and superposition of magnetic spins by interacting with magnetic resonance by a thin film of magnetic material or fluid. In addition, it is controlled by the electric field of magnetoplasmon due to the photosensitivity generated by the exciton of the semiconductor pigment.
Hadamard transformation is paramagnetic and diamagnetic elements, their oxides, compounds, and their ferromagnetically transformed elements by magnetoplasmon electric fields due to photosensitivity generated by excitons of semiconductor pigments. When a microwave, a terahertz wave, and a magnetic field are applied to an alloy, a carbon material, or a ferromagnetic oxide of Ni, Mn, Fe, Co, or Cr, the magnetoplasmon effect is generated when the microwave or the terahertz wave is irradiated. It is produced by inclining the rotation axis at 45° and interacting with magnetic resonance by a thin film of ferromagnet, ferrimagnet or fluid to cause rotation and superposition of magnetic spins.
Initialization of the quantum circuit and quantum gate is performed by far infrared rays with an energy ΔE of the system of the quantum circuit and quantum gate of the present invention, a blue frequency wavelength of 450 nm to 485 nm higher than the 1 eV band of the terahertz band, and an energy of 2.64 eV to 2.64 eV. .75 eV light or laser is applied for initialization.

の量子ビットの回路を格子状に並べ、強い磁場をかけ、量子ゆらぎを大きくし、いろいろな状態がとれるようにする。その後、磁場を弱めていく、すると次第に量子ビット間の相互作用が強まり最も安定な最適解、基底状態が求まるという方法である。
強磁性転換された常磁性体、反磁性体の元素並びに、その酸化物、化合物並びにその合金又は炭素素材、強磁性体のＮｉ，Ｍｎ，Ｆｅ，Ｃｏ，Ｃｒの酸化物にマイクロ波、テラヘルツ波及び磁場を印加しながらマイクロ波、テラヘルツ波を照射するとマグネトプラズモン効果が生じることによるスピンの回転、強磁性転換された常磁性体、反磁性体の元素並びに、その酸化物、化合物並びにその合金又は炭素素材、強磁性体のＮｉ，Ｍｎ，Ｆｅ，Ｃｏ，Ｃｒの酸化物の固体素子を格子状に結合し、強磁性体、フェリ磁性体の薄膜又は流体による磁性共鳴と相互作用させ、マイクロ波及び磁場の強度を制御し、磁性スピンの回転及び重ね合わせが生じることによって量子アニーリング、量子イジングモデルの量子コンピューターを作成する。
量子回路の出力の読み出しは、量子ゲートまたは、量子イジングモデルの固体又は、流体素子の電場、磁場、輻射する遠赤外線又はテラヘルツ帯の電磁波を測定すること及びレーザーを照射することによって読み出す。
マグネトプラズモン効果と磁性共鳴によるスピンの相互作用は、遠赤外線、テラヘルツ波帯（波長１０μｍ～２００μｍ）である。マイクロ波を使用したスピン回転による量子回路、量子ゲートの操作は、マイクロ波はＧＨｚ帯（波長１ｃｍ～２０ｃｍ）であるため、ナノ秒の単位で操作できる。テラヘルツ波を使用または、マイクロ波とテラヘルツ波を併用し。マグネトプラズモン効果によるスピン回転による量子回路、量子ゲートの操作はＴＨｚ帯であるため、ピコ秒からフェムト秒の単位で操作できる。テラヘルツ波、及びマイクロ波とテラヘルツ波を併用することによって、マイクロ波のみを使用した、量子回路、量子ゲートより、１００倍以上の速度で操作できる。Quantum annealing and quantum Ising model quantum computers have been commercialized by Canadian company D-Wave. The quantum circuit is formed by loops of superconducting wires.

The qubit circuits are arranged in a lattice, and a strong magnetic field is applied to increase the quantum fluctuations so that various states can be obtained. After that, the magnetic field is weakened, and as a result, the interaction between the qubits is gradually strengthened, and the most stable optimum solution, the ground state, is obtained.
Microwaves and terahertz waves to ferromagnetically converted paramagnetic and diamagnetic elements, their oxides, compounds and their alloys or carbon materials, and ferromagnetic Ni, Mn, Fe, Co, and Cr oxides. And when irradiated with microwaves and terahertz waves while applying a magnetic field, spin rotation due to magnetoplasmon effect, paramagnetic and diamagnetic elements converted to ferromagnetism, oxides, compounds and alloys thereof or Solid elements of carbon materials and ferromagnetic Ni, Mn, Fe, Co, and Cr oxides are combined in a lattice, and interacted with magnetic resonance by ferromagnetic or ferrimagnetic thin films or fluids to generate microwaves. And by controlling the strength of the magnetic field, the rotation and superposition of the magnetic spins are generated to create a quantum computer of quantum annealing and quantum Ising model.
The output of the quantum circuit is read out by measuring the electric field, magnetic field, radiated far-infrared rays or terahertz-band electromagnetic waves of the quantum gate or the solid or fluid element of the quantum Ising model, and by irradiating the laser.
The interaction of spins due to the magnetoplasmon effect and magnetic resonance is in the far-infrared and terahertz waveband (wavelength 10 μm to 200 μm). Quantum circuits and quantum gates by spin rotation using microwaves can be operated in units of nanoseconds because microwaves are in the GHz band (wavelength 1 cm to 20 cm). Use terahertz waves or use microwaves and terahertz waves together. Since the operation of quantum circuits and quantum gates by spin rotation due to the magnetoplasmon effect is in the THz band, it can be operated in units of picoseconds to femtoseconds. By using terahertz waves and microwaves and terahertz waves together, it is possible to operate at a speed 100 times or more faster than that of quantum circuits and quantum gates using only microwaves.

In a quantum computer device, a device that requires a persistent quantum state is a quantum memory device. Currently, quantum memory devices are connected to superconductors by magnetic resonance due to the spin of the nitrogen vacancy center in diamond or the spin of the nitrogen vacancy center in diamond. Investigations have been made to create quantum memory devices by operating with microwaves. However, the permanent quantum coherence time is on the order of milliseconds, and a quantum memory device that can permanently store information that maintains a permanent quantum coherence state has not been fabricated.
Microwaves and terahertz waves to ferromagnetically converted paramagnetic and diamagnetic elements, their oxides, compounds and their alloys or carbon materials, and ferromagnetic Ni, Mn, Fe, Co, and Cr oxides. And when irradiated with microwaves and terahertz waves while applying a magnetic field, spin rotation due to magnetoplasmon effect, paramagnetic and diamagnetic elements converted to ferromagnetism, oxides, compounds and alloys thereof or Solid elements of carbon materials and ferromagnetic Ni, Mn, Fe, Co, and Cr oxides are combined in a lattice and interacted with magnetic resonance by ferromagnetic or ferrimagnetic thin films or fluids to generate magnetoplasmons. In the superposition of spins due to the effect and the photoelectric effect of a semiconductor pigment containing a polyphenol liquid and a surfactant, a charged substance is generated by a redox reaction at the contact interface between the semiconductor pigment, the polyphenol liquid, and the surfactant. Photosensitivity is caused by the recombination of electrons and holes in the semiconducting pigment with charged substances at the interface of the semiconducting pigment to form excitons. The time during which the quantum coherence state is maintained by external application of the electric field of magnetoplasmons due to photosensitivity generated by excitons, ferromagnetic and ferrimagnetic thin films, and the magnetic field is determined by the self of magnetoplasmons. The interaction of the excitation phenomenon with the magnetic field results in a permanent long duration. A quantum memory device using quantum gates and quantum circuits according to the present invention is a memory device that maintains a persistent quantum state.
Since the magnetoplasmon energy is in the terahertz band and the far-infrared band, when operated at room temperature, the thermal effect at the room temperature level is very small, and a quantum memory device that can maintain a permanent quantum state at room temperature can be created.

Effect of the invention

The present invention relates to the technology of quantum circuits in quantum computers that can be made at room temperature and on a scale that is normally usable, ie, on a scalable scale. It is a technology related to a quantum computer with a quantum circuit in which the decoherence time is very long due to the superposition state of the spins of the magnetic material, or the state of the spin superposition of the magnetic material can hold a permanent quantum state. .
The present invention provides ferromagnetically converted paramagnetic and diamagnetic elements, their oxides, compounds and their alloys or carbon materials, ferromagnetic Ni, Mn, Fe, Co and Cr oxides and excitons. Namely, semiconductor pigments of III-V group compound semiconductors, II-IV group compound semiconductors, and IV-VI group compound semiconductors that produce photosensitivity and light emission by excitons, ferromagnets, and thin films and laminated thin films of ferrimagnetic substances , Micro It is a technology to create a quantum computer with a quantum circuit by controlling and calculating the strength of waves, terahertz waves and magnetic fields.The created quantum circuit is read out by using a laser or an electrode to read the potential of the signal indicated by the quantum circuit. Method. It is a method of initializing a quantum circuit by applying a laser, an electric field, or an electric field and a magnetic field, used in a quantum computer.
Conventionally known nuclear magnetic resonance computers, ion trap computers, quantum dot computers, photon computers, and quantum computers using superconducting devices are large-scale and expensive, and are difficult to use for general commercial use.
Quantum gates and quantum circuits according to the present invention can be used at room temperature and pressure. Also, the materials used for the solid-state quantum devices are inexpensive and can be used for general commercial use.

Ferromagnetically converted paramagnetic and diamagnetic elements, their oxides, compounds and their alloys or carbon materials, ferromagnetic Ni, Mn, Fe, Co and Cr oxides, and ferromagnets, Quantum gate composed of spin rotation and superimposition caused by magnetoplasmon effect when microwave, terahertz wave and magnetic field are applied to thin film of ferrimagnetic material and irradiated with microwave or terahertz wave. Using a laser, quantum gates can be initialized and ferromagnetically switched paramagnetic, diamagnetic elements and their oxides, compounds and alloys or carbon materials, ferromagnetic Ni, Mn, Fe, Data are read using electrodes from Co, Cr oxides. Ferromagnetically converted paramagnetic and diamagnetic elements, their oxides, compounds and alloys or carbon materials, ferromagnetic Ni, Mn, Fe, Co and Cr oxides, and group III-V When microwaves, terahertz waves, and magnetic fields are applied to compound semiconductors, II-IV group compound semiconductors, IV-VI group compound semiconductor semiconductor pigments, ferromagnets, and ferrimagnetic thin films, magneto A quantum gate composed of spin rotation and superposition caused by the plasmon effect. Using a laser, quantum gates can be initialized and ferromagnetically switched paramagnetic, diamagnetic elements and their oxides, compounds and alloys or carbon materials, ferromagnetic Ni, Mn, Fe, Data is read out from the oxides of Co and Cr using electrodes, and from the III-V group compound semiconductors, II-IV group compound semiconductors and IV-VI group compound semiconductors. Ferromagnetically converted paramagnetic and diamagnetic elements and oxides thereof, carbon materials, oxides of ferromagnetic Ni, Mn, Fe, Co, and Cr, III-V group compound semiconductors, II A magnetoplasmon effect occurs when a microwave, a terahertz wave, and a magnetic field are applied to a semiconductor pigment of a -IV group compound semiconductor, a IV-VI group compound semiconductor, or a thin film of a ferrimagnetic material, and a microwave, a terahertz wave, or a terahertz wave is irradiated while applying a magnetic field. Quantum gates of Hadamard transformation with spin rotation axis tilted at 45° in possible spin rotation and superposition. Using a laser, quantum gates can be initialized and ferromagnetically switched paramagnetic, diamagnetic elements and their oxides, compounds and alloys or carbon materials, ferromagnetic Ni, Mn, Fe, Data is read out from the oxides of Co and Cr using electrodes, and from the III-V group compound semiconductors, II-IV group compound semiconductors and IV-VI group compound semiconductors. Ferromagnet, ferrimagnet thin film or fluid magnetic resonance and ferromagnetism converted paramagnetic and diamagnetic elements, their oxides, compounds and their alloys or carbon materials, ferromagnet Ni, Mn , Fe, Co, and Cr oxides are irradiated with microwaves, terahertz waves, and magnetic fields while applying microwaves, terahertz waves, magnetoplasmon effects occur, and magnetic resonance and magnetic resonance by ferromagnetic or ferrimagnetic thin films or fluids occur. It is created by the rotation and superposition of magnetic spins due to their interaction. And using a quantum gate laser controlled by a magnetoplasmon electric field due to photosensitivity generated by the excitons of the semiconductor pigments, the quantum gate can be initialized and ferromagnetically switched paramagnetic and diamagnetic materials. Elements and their oxides, compounds and their alloys or carbon materials, ferromagnetic Ni, Mn, Fe, Co and Cr oxides, III-V group compound semiconductors, II-IV group compound semiconductors, IV-VI group Data is read out from the compound semiconductor using electrodes.

1 ferromagnetic and ferrimagnetic thin films 2 microwave and terahertz wave generator 3 microwave and terahertz waves 4 paramagnetic and diamagnetic elements converted to ferromagnetism, their oxides, compounds and their alloys or Carbon materials, ferromagnetic Ni, Mn, Fe, Co, Cr oxides 5 III-V group compound semiconductors, II-IV group compound semiconductors, IV-VI group compound semiconductor semiconductor pigments 6 Laser 7 Application of magnetic field 8 Electrodes 9 for reading electric fields from ferromagnetically converted paramagnetic and diamagnetic elements, their oxides, compounds and their alloys or carbon materials, ferromagnetic Ni, Mn, Fe, Co and Cr oxides. Electrode 10 for reading an electric field from semiconductor pigments of Group III-V compound semiconductors, Group II-IV compound semiconductors, Group IV-VI compound semiconductors Ferromagnet, ferrimagnet, paramagnet with ferromagnetic conversion, diamagnet Elements and their oxides, compounds and their alloys or carbon materials, ferromagnetic Ni, Mn, Fe, Co and Cr oxides, III-V group compound semiconductors, II-IV group compound semiconductors, IV-VI group Fluids made of semiconductor pigments of compound semiconductors 11 Ferromagnets, ferrimagnets, ferromagnetism-converted paramagnets, diamagnetic elements, their oxides, compounds and their alloys or carbon materials, ferromagnetic Ni, Electrode for reading electric potential from a fluid made of oxides of Mn, Fe, Co, and Cr, III-V group compound semiconductors, II-IV group compound semiconductors, and IV-VI group compound semiconductor semiconductor pigments

Claims (4)

By ferromagnetically converted paramagnetic and diamagnetic elements and their oxides, compounds and alloys or carbon materials, ferromagnetic Ni, Mn, Fe, Co and Cr oxides, excitons Semiconductor pigments of III-V group compound semiconductors, II-IV group compound semiconductors, and IV-VI group compound semiconductors that generate photosensitivity and light emission, ferromagnetic materials, ferrimagnetic materials, thin films and laminated thin films, fluids, or Magnetic effect and ferromagnetism due to magnetic resonance of ferromagnets and ferrimagnets generated by microwaves or terahertz waves, lasers or combined use of microwaves and terahertz waves and lasers in laminated structures of thin films and fluids or lattice structures Interaction of transformed paramagnetic and diamagnetic elements and their oxides, compounds and alloys or oxides of carbon materials, ferromagnetic Ni, Mn, Fe, Co, Cr with magnetoplasmon effect Quantum gate, quantum circuit, and microwave or terahertz wave, microwave and terahertz wave combined and magnetic field applied at the same time, composed of magnetic spin rotation and superposition by microwave, terahertz wave, laser and magnetic field Magnetic effect by magnetic resonance of ferromagnet and ferrimagnet by controlling strength, paramagnetic and diamagnetic elements converted to ferromagnetism, their oxides, compounds and their alloys or carbon materials, ferromagnet It has a quantum gate and a quantum circuit that perform computation by manipulating the rotation and superposition of magnetic spins by the interaction of the magnetoplasmon effect of oxides of Ni, Mn, Fe, Co, and Cr, and operates at normal temperature and pressure. How to create a quantum computer. The quantum gate and quantum circuit described in claim 1 are converted to a laser, or the potential or magnetic field of the signal indicated by the quantum gate and quantum circuit is converted to ferromagnetic paramagnetic or diamagnetic elements, and their oxides. , compounds and their alloys or carbon materials, ferromagnetic Ni, Mn, Fe, Co, Cr oxides and excitons, that is, III-V group compound semiconductors in which photosensitivity and light emission are generated by excitons, II-IV group compounds A method of reading out from semiconductor pigments of semiconductors and IV-VI group compound semiconductors using electrodes. A method of initializing the quantum gates and quantum circuits of claim 1 by applying a laser, an electric field, or an electric field and a magnetic field. A method for fabricating a quantum computer by fabricating quantum gates and quantum circuits by combining the quantum gates and quantum circuits according to claim 1 with semiconductor arithmetic circuits used in classical computers.

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