JP2022169211A - Wafer alignment device, semiconductor manufacturing device, and substrate transfer device - Google Patents

Abstract

To appropriately detect any of a plurality of predetermined elements on a wafer.SOLUTION: A wafer alignment device includes an imaging unit 21 that images at least one main surface of a wafer W including an outer peripheral edge of a wafer W, an illumination unit 22 that irradiates an area to be imaged by the imaging unit 21 with illumination light, and a detection unit that detects at least two of the position of the outer peripheral edge, an orientation specifying portion of the wafer W, and the identification code formed on the main surface on the basis of the imaging result of the imaging unit 21. The illumination unit 22 has side illumination in the circumferential direction of the wafer W and side illumination in the radial direction of the wafer W.SELECTED DRAWING: Figure 1

Description

The present disclosure relates to a wafer alignment device, a semiconductor manufacturing device, and a substrate transfer device.

2. Description of the Related Art In the manufacturing process of a semiconductor device, a semiconductor wafer substrate (hereinafter referred to as "wafer") is subjected to a plurality of processes, and a wafer alignment apparatus is used to align the wafer between each process. As a wafer alignment device, for example, it has the function of aligning the wafer by imaging the edge including the notch or orientation flat (hereinafter referred to as "orientation flat") of the wafer, and also the function of imaging and reading the identification code of the wafer. (See Patent Document 1, for example).

JP-A-2002-246446

2. Description of the Related Art In a wafer alignment apparatus, when imaging multiple elements such as the edge of a wafer and an identification code, it is necessary to irradiate each element to be imaged with illumination light. However, depending on the irradiation mode of the illumination light, a sufficient contrast image may not necessarily be obtained for any one of the plurality of elements, and all of the plurality of elements may not be detected appropriately.

The present disclosure provides techniques that can adequately detect any of the predetermined multiple elements on the wafer.

According to one aspect of the present disclosure,
an imaging unit that captures an image of at least one main surface of the wafer including the outer peripheral edge of the wafer;
an illumination unit that irradiates an area to be imaged by the imaging unit with illumination light;
a detection unit that detects at least two of the position of the outer peripheral edge, the orientation specifying portion of the wafer, and the identification code formed on the main surface, based on the imaging result of the imaging unit;
The illumination unit has side illumination in the circumferential direction of the wafer and side illumination in the radial direction of the wafer.

According to the present disclosure, any of the predetermined multiple elements on the wafer can be detected appropriately.

1 is an explanatory diagram schematically showing a schematic configuration example of a wafer alignment apparatus according to an embodiment of the present disclosure; FIG. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an explanatory diagram showing an example configuration of a main part of a wafer alignment apparatus according to an embodiment of the present disclosure, where (a) is a diagram showing an example of the positional relationship in the radial direction of the wafer, and (b) is the position in the circumferential direction of the wafer; FIG. 4 is a diagram showing an example of relationships; FIG. 2 is an explanatory diagram illustrating oblique light components of irradiation light in a wafer alignment apparatus according to an embodiment of the present disclosure, (a) is a diagram illustrating an example of oblique light components in the radial direction of a wafer, and (b) is a diagram of a wafer. It is a figure which shows the example of the diagonal light component in a circumferential direction. FIG. 4 is an explanatory diagram showing a specific example of a contrast image that is an imaging result of a wafer, where (a) is a diagram showing an example of an image obtained when the wafer is irradiated with only R component light, and (b) is a G component; FIG. 2C is a diagram showing an example of an image obtained when a wafer is irradiated with only light of , and (c) is a diagram showing an example of an image obtained when a wafer is irradiated with white light containing each color component of RGB. FIG. 10 is an explanatory diagram showing an example of the main configuration of a wafer alignment apparatus according to another embodiment of the present disclosure, where (a) is a diagram showing an example of light intensity control in the radial direction of the wafer, and (b) is the radial direction of the wafer; FIG. 10 is a diagram showing another example of light intensity control in .

<One embodiment>
An embodiment of the present disclosure will be described below with reference to the drawings.

A wafer alignment apparatus according to the present embodiment described below is also called a wafer aligner, and its main function is to perform wafer alignment (alignment processing). However, as will be described later, in addition to the main functions, other functions (for example, a wafer identification function) are also supported.

A wafer to be aligned is used, for example, in the manufacture of a semiconductor device (semiconductor device), is formed in a disk shape, and has a notch or an orientation flat in a part of its outer peripheral edge (hereinafter also referred to as "edge"). is configured with A notch or an orientation flat corresponds to a specific example of an orientation identifying portion for identifying the crystal orientation of a wafer. Also, the wafer is configured with two main surfaces. The main surface of the wafer is a surface other than the outer peripheral end surface. Therefore, each of the front surface and the back surface when the wafer is viewed from one side corresponds to the main surface. Further, each of the upper surface and the lower surface when the wafer is placed on the horizontal surface corresponds to the main surface. Furthermore, an identification code is formed on the wafer, for example near the edge of at least one main surface, to identify the wafer. The identification code includes, for example, a character code, but is not limited thereto, and may be a two-dimensional code such as a barcode, or a combination of a character code and a two-dimensional code. .

In this specification, when the word "wafer" is used, it means "wafer itself" or "laminate (aggregate) of wafer and predetermined layers, films, etc. formed on its surface". In other words, the term "wafer" includes a predetermined layer or film formed on the surface of the wafer. Further, in this specification, when the term "main surface of the wafer" is used, it may mean "the front surface or the back surface (each exposed surface) of the wafer itself" or "predetermined layer or layer formed on the wafer." It may mean the exposed surface of the film or the like, ie, the outermost surface of the wafer as a laminate.

A wafer alignment apparatus according to the present embodiment is used by being mounted on a semiconductor manufacturing apparatus, for example. 2. Description of the Related Art A semiconductor manufacturing apparatus is configured to perform a predetermined process on a wafer, and an example thereof is a probe apparatus that performs a wafer probe test by bringing a probe needle into contact with a wafer to be inspected. However, it is not limited to this, and the wafer to be processed can be subjected to pressurization (depressurization) processing, heat processing, film formation processing, oxidation processing, diffusion processing, etching processing, exposure processing, resist coating processing, development processing, The wafer alignment apparatus according to this embodiment may be installed in a semiconductor manufacturing apparatus that performs surface inspection processing, ion implantation processing, cleaning processing, and the like. It is also possible to mount the wafer alignment apparatus according to the present embodiment on a substrate transfer apparatus that transfers wafers instead of the semiconductor manufacturing apparatus.

(1) Configuration Example of Wafer Alignment Apparatus Here, a configuration example of the wafer alignment apparatus according to the present embodiment will be described.
FIG. 1 is an explanatory diagram schematically showing a schematic configuration example of a wafer alignment apparatus according to this embodiment. FIG. 2 is an explanatory diagram showing an example configuration of the main part of the wafer alignment apparatus according to this embodiment.

As shown in FIG. 1, the wafer alignment apparatus according to the present embodiment has a base portion 11 serving as a base, and a sensor unit portion 20 supported by columns 12 rising from the base portion 11 . A control section 30 is electrically connected to the sensor unit section 20 via a wired or wireless communication line. Details of the sensor unit section 20 and the control section 30 will be described later.

The wafer alignment apparatus also has tweezers 13 that support the wafer W from below. The tweezers 13 are attached to the tip of a robot arm (not shown) that transports the wafer W. As shown in FIG. By the operation of the robot arm, the tweezers 13 transport the wafer W received from the previous process to a predetermined position on the base section 11, and transfer the wafer W transported from the predetermined position on the base section 11 to the subsequent process. It has become. The tweezers 13 are preferably provided with a plurality (for example, two) of tweezers 13 that can operate independently, in order to improve the processing throughput of the wafers W. FIG. However, it does not necessarily have to be plural, and only one may be provided. The tweezers 13 are made of, for example, a plate-shaped member such as quartz, ceramics, or aluminum.

The base portion 11 is provided with a chuck portion 14 that chucks the vicinity of the center of the lower surface side of the wafer W transported to a predetermined position, and a driving portion 15 that causes the chuck portion 14 to move up and down and rotate. The lifting operation of the drive unit 15 enables the chuck unit 14 to support and chuck (fix) the wafer W conveyed by the tweezers 13 from below. Further, the lowering operation of the drive unit 15 enables the chuck unit 14 to transfer the chucked wafer W to the tweezers 13 . In addition, the chuck section 14 can rotate the wafer W in the chucked state by rotating the drive section 15 , thereby moving the relative position between the wafer W and the sensor unit section 20 . That is, the chuck section 14 and the driving section 15 function as a specific example of the moving mechanism section 16 that moves the relative position between the wafer W and the sensor unit section 20 . The chuck part 14 and the drive part 15 as described above are configured by, for example, a combination of a vacuum chuck, an electric motor, an actuator, and the like.

As shown in FIGS. 2A and 2B, the sensor unit section 20 includes an imaging section 21 and an illumination section 22 . Both the imaging unit 21 and the illumination unit 22 are arranged parallel to the main surface of the wafer W. As shown in FIG. The term "parallel" as used herein means that they are aligned along the main surface of the wafer W, and includes a case where they are positioned parallel to each other and a case where they can be considered to be substantially parallel.

The imaging unit 21 is for imaging the main surface of the wafer W including the outer peripheral edge E of the wafer W. As shown in FIG. Since the image is captured so as to include the outer peripheral edge E, the imaging unit 21 is configured to extend along the radial direction of the wafer W (that is, the normal direction of the arc forming the outer shape of the wafer W), It is arranged so as to straddle the region on the main surface of the wafer W and the region outside the outer peripheral edge E of the wafer W with the outer peripheral edge E interposed therebetween. Although the main surface of the wafer W to be imaged is the upper surface of the wafer W, the imaging unit 21 is arranged to image the lower surface of the wafer W without being limited to this. Alternatively, it may be arranged so as to image both the upper and lower surfaces of the wafer W. FIG. That is, the imaging unit 21 images at least one main surface of the wafer W including the outer peripheral edge E of the wafer W. As shown in FIG. Regardless of which surface is to be imaged, the imaging unit 21 takes a band-shaped area extending in the radial direction of the wafer W as an area to be imaged. Such an imaging unit 21 is, for example, a CMOS (Complementary Metal Oxide Semiconductor) line sensor or a CCD (Charge Coupled Device) line sensor (hereinafter , which are collectively referred to as “line sensors”). Hereinafter, in the present embodiment, the imaging unit 21 may also be called the line sensor 21 .

The illumination unit 22 is for illuminating the area to be imaged by the line sensor 21 with illumination light. That is, the illumination unit 22 is configured to irradiate the main surface of the wafer W imaged by the line sensor 21 with illumination light. Such an illumination unit 22 is configured by, for example, an LED (LIGHT Emitting Diode) light 22 that has a plurality of light emitting elements arranged in a line and emits illumination light by causing each light emitting element to emit light. Hereinafter, in the present embodiment, the illumination section 22 may be called the LED light 22 as well.

The LED light 22 is configured such that a plurality of light emitting elements are arranged in a line. The respective light emitting elements are arranged along the radial direction of the wafer W. As shown in FIG. In other words, the LED light 22 is arranged along the line sensor 21 so that a plurality of light emitting elements extend linearly in the radial direction of the wafer W. As shown in FIG.

Moreover, the LED light 22 is configured by having a plurality of lines (rows) in which a plurality of light emitting elements are arranged. In other words, the LED light 22 has at least a line portion 22a on one side of the line sensor 21 in which the light emitting elements are aligned in the radial direction of the wafer W, and a line portion 22a on the other side of the line sensor 21 in which the light emitting elements are arranged on the wafer W. Line portions 22b are arranged in the radial direction, and the line portions 22a and 22b are arranged side by side with the line sensor 21 interposed therebetween. As a result, a plurality of line portions 22a and 22b of the LED light 22 are distributed in the circumferential direction of the wafer W (that is, in the tangential direction of the arc forming the outer shape of the wafer W) with the line sensor 21 interposed therebetween. Become.

The LED light 22 is configured to emit illumination light by causing a plurality of light emitting elements to emit light. is preferably configured to In addition, the LED light 22 may be configured to irradiate light of a plurality of wavelengths or wavelength ranges as light of specific wavelengths, and to irradiate light of each wavelength or each wavelength range with a predetermined intensity balance. preferable. Details of the light of the specific wavelength and the predetermined intensity balance will be described later.

The control section 30 shown in FIG. 1 is electrically connected to the sensor unit section 20 having the line sensor 21 and the LED light 22 to perform operation control processing for the sensor unit section 20 . The control unit 30 is electrically connected to a computer device (hereinafter abbreviated as “PC”), not shown, via a wired or wireless communication line, and operates in cooperation with the PC. there is The operation control processing performed by the control unit 30 in cooperation with the PC includes image processing for imaging results obtained by the line sensor 21, wavelength control processing for light emitted by the LED light 22, and the like. By performing such operation control processing, the control unit 30 functions as a detection unit that detects predetermined item information based on the imaging result of the line sensor 21, as will be described in detail later. The PC linked to the , performs arithmetic processing of the wafer center position and character recognition processing of the wafer identification code. Furthermore, the control unit 30 functions as a wavelength determination unit that determines the wavelength of the light emitted by the LED light 22 in cooperation with the PC. The control unit 30 is configured by, for example, a board module on which an LSI (Large Scale Integration) such as an image processing chip is mounted. The PC may be configured by a general-purpose computer device, or may be configured as a dedicated computer device, as long as it can perform a desired processing operation by installing a predetermined program. .

(2) Example of Processing Operation in Wafer Alignment Apparatus Next, an example of processing operation in the wafer alignment apparatus configured as described above will be described.

(Outline of processing operation example)
When a wafer W to be subjected to alignment processing is transferred from the previous process, the wafer alignment apparatus places the wafer W at a predetermined position on the base portion 11 with the tweezers 13 (that is, a position at which the chuck portion 14 can chuck and rotate the wafer W). ). After the wafer W reaches the predetermined position, the driving section 15 raises the chuck section 14, and the chuck section 14 chucks the lower surface side of the wafer W near the center. As a result, the wafer W is separated from the tweezers 13 and supported by the chuck portion 14 . When the chuck portion 14 supports the wafer W, the driving portion 15 rotates the chuck portion 14 . When the chuck part 14 rotates, the wafer W supported by the chuck part 14 also rotates around the center of the wafer W. As a result, the wafer W moves relative to the sensor unit section 20 so that the outer peripheral edge E of the wafer W passes through the area to be imaged by the line sensor 21 over the entire circumference. That is, when viewed from the sensor unit section 20 side, the relative position with respect to the wafer W is moved so that the area to be imaged extends over the entire circumference of the wafer W. FIG.

When the relative positions of the wafer W and the sensor unit section 20 are moved, in the sensor unit section 20, the LED light 22 emits illumination light and the line sensor 21 picks up an image of the area to be imaged. As a result, the line sensor 21 obtains an imaging result (image data) including the outer peripheral edge E over the entire circumference of the wafer W. FIG. Image data obtained by the line sensor 21 is sent from the line sensor 21 to the control section 30 .

When the image data obtained by the line sensor 21 is received, the control section 30 performs predetermined image processing on the received image data and sends the processed image data to the PC. Then, the PC detects predetermined item information necessary for alignment processing from the image data.

For example, the PC cooperating with the control unit 30 detects the position of the outer peripheral edge E of the wafer W over the entire circumference using an edge detection technique or the like for image data. If the position of the outer peripheral edge E of the wafer W can be recognized, the positional information of the central coordinates of the wafer W can be specified from the recognition result. Therefore, the position of the outer peripheral edge E of the wafer W corresponds to an example of predetermined item information required for alignment processing.

Further, for example, the PC cooperating with the control unit 30 detects the forming position of the orientation specifying portion (that is, the notch or the orientation flat) of the wafer W using the edge detection technique or the feature amount extraction technique for the image data. If the position of the orientation specifying portion of the wafer W can be recognized, the crystal orientation of the wafer W can be specified from the recognition result. Therefore, the position of the orientation specifying portion of wafer W corresponds to another example of predetermined item information required for alignment processing.

Further, for example, the PC cooperating with the control unit 30 detects the identification code of the wafer W using character recognition technology, pattern recognition technology, or the like for image data. If the content of the identification code of the wafer W can be recognized, the wafer W can be discriminated from other wafers W from the recognition result, and the specifications, state, etc. of the wafer W can also be specified. This is particularly important when performing alignment processing on a large number of wafers W continuously. Therefore, the identification code of wafer W corresponds to yet another example of predetermined item information required for alignment processing.

The PC cooperating with the control unit 30 detects at least two, preferably all three of the predetermined items of information necessary for the above-described alignment processing. In other words, the PC determines at least two of the position of the outer peripheral edge E of the wafer W, the azimuth specifying portion of the wafer W, or the identification code formed on the main surface of the wafer W, based on the imaging result of the line sensor 21. detect one, preferably all three. This is because the accuracy of alignment processing can be improved as the amount of predetermined item information to be detected increases.

After the PC cooperating with the control section 30 detects the predetermined item information, the drive section 15 stops the rotation of the chuck section 14 and further lowers the chuck section 14 . The wafer W is thereby supported by the tweezers 13 . After supporting the wafer W, the tweezers 13 transfer the wafer W to a subsequent process. At this time, along with the transfer of the wafer W, the control unit 30 transmits predetermined alignment information (for example, position correction information) based on the predetermined item information detected for the wafer W to a controller of the robot arm that operates the tweezers 13 or a post-process. , the controller of the device to which the wafer W is transferred is notified. Alternatively, the actuator may correct the wafer center position before lowering the wafer W by the chuck unit 14 , and then lower the wafer W onto the tweezers 13 to correct the center and determine the notch position. As a result, at the stage before transferring the wafer W to the post-process, at the time of transferring the wafer W to the post-process, or at the stage after transferring the wafer W to the post-process, the position correction process, etc. based on the predetermined alignment information can be performed. is performed, and as a result, alignment (alignment processing) of the wafer W is performed.

As described above, the wafer alignment apparatus according to the present embodiment detects predetermined item information based on the imaging result of the line sensor 21, and aligns the wafer W using the detection result. Therefore, it is possible to perform the alignment process of the wafer W quickly and accurately in a non-contact manner.

Moreover, the wafer alignment apparatus according to the present embodiment, in the alignment process of the wafer W, has the position of the outer peripheral edge E of the wafer W, the orientation specifying portion of the wafer W, and the main surface of the wafer W, which are the predetermined items of information. The formed identification codes are not detected by separate sensors, but are collectively detected by one line sensor 21 . Therefore, it is possible to suppress the complication of the device configuration, thereby facilitating the realization of the miniaturization and cost reduction of the device.

(Details of imaging processing)
Subsequently, among the series of processing operation examples described above, the processing operation for obtaining the imaging result by the line sensor 21 will be described in more detail.

As described above, the wafer alignment apparatus according to the present embodiment is formed on the main surface of the wafer W, the position of the outer peripheral edge E of the wafer W, the azimuth specifying portion of the wafer W, and the main surface of the wafer W by one line sensor 21 . The identification code is detected. In other words, each detection is performed from the same imaging result obtained by the same line sensor 21 .

In that case, if the illumination light for the area to be imaged by the line sensor 21 is, for example, coaxial epi-illumination, side illumination in only one direction, or the like, the outer peripheral edge E of the wafer W, the orientation specifying portion, and the identification code For each, it is not always possible to obtain a sufficient contrast image. If a sufficient contrast image is not obtained, there is a possibility that any one of the outer peripheral edge E of the wafer W, the azimuth identification portion, and the identification code cannot be properly detected.

Based on this, in the wafer alignment apparatus according to the present embodiment, as shown in FIGS. A plurality of line portions 22a and 22b are distributed and arranged in the circumferential direction of the wafer W with the line sensor 21 interposed therebetween.

When the LED light 22 extends in the radial direction of the wafer W, the light scattering (diffraction) from the LED light 22 obliquely along the radial direction of the wafer W with respect to the location to be imaged by the line sensor 21 . (See arrow L1 in FIG. 2A). Therefore, the LED lights 22 are arranged so as to extend in the radial direction of the wafer W, thereby forming side illumination of the wafer W in the radial direction.

In addition, if the line portions 22a and 22b of the LED light 22 are distributed in the circumferential direction of the wafer W, scattering (diffraction) of the light from the line portions 22a and 22b causes the line sensor 21 to pick up light. On the other hand, light including a component that impinges obliquely along the circumferential direction of the wafer W is irradiated (see arrow L2 in FIG. 2B). Therefore, the LED lights 22 are distributed in the circumferential direction of the wafer W, thereby constituting side illumination of the wafer W in the circumferential direction.

That is, in the wafer alignment apparatus according to this embodiment, the LED light 22 is configured to have side illumination in the circumferential direction of the wafer W and side illumination in the radial direction of the wafer W. As shown in FIG.

If the LED light 22 has side illumination in the circumferential and radial directions of the wafer W, the illumination light to the location to be imaged by the line sensor 21 includes oblique light components in the circumferential direction of the wafer W and radial light components. oblique light components. In particular, as described above, if the LED light 22 extends in the radial direction of the wafer W and the line portions 22a and 22b are distributed in the circumferential direction of the wafer W, then the imaged location may be Oblique light components from each of the four directions surrounding the location are included. In other words, illumination light is emitted from each of the four directions to the location to be imaged by the line sensor 21 .

Therefore, by using lateral illumination in the circumferential and radial directions of the wafer W, a sufficient contrast image can be obtained for each of the outer peripheral edge E of the wafer W, the orientation specifying portion, and the identification code. Specifically, for example, for the outer peripheral edge E of the wafer W, a sufficient contrast image can be obtained by lateral illumination of the wafer W in the radial direction. Further, for example, with respect to the azimuth identification portion of the wafer W, a sufficient contrast image can be obtained by at least one of lateral illumination of the wafer W in the circumferential direction and lateral illumination of the wafer W in the radial direction. Further, for example, regarding the identification code of the wafer W, a sufficient contrast image can be obtained by lateral illumination of the wafer W in the circumferential direction. This can be ensured in particular by irradiating from each of the four directions.

In this manner, sufficient contrast images can be obtained for each of the outer peripheral edge E of the wafer W, the orientation specifying portion, and the identification code. However, it is possible to appropriately detect any of the outer peripheral edge E of the wafer W, the orientation specifying portion, and the identification code.

During the imaging process by the line sensor 21 as described above, the moving mechanism section 16 rotates the wafer W to move the relative position between the wafer W and the sensor unit section 20 . Therefore, even if it is necessary to obtain an image pickup result over the entire circumference of the wafer W, the line sensor 21 that picks up only a partial area of the wafer W instead of the entire wafer W can be used by providing the moving mechanism section 16. Therefore, the size of the sensor unit section 20 can be reduced. Further, even when the line sensor 21 picks up an image of only a partial area of the wafer W, it is possible to obtain an image pick-up result over the entire circumference of the wafer W by providing the moving mechanism unit 16. Detection of the edge E, the azimuth specifying portion, and the identification code is not hindered.

The illumination light necessary for the imaging process includes an oblique light component in the circumferential direction of the wafer W and an oblique light component in the radial direction of the wafer W, as described above. In that case, the following oblique light component can be considered as a specific example.
FIG. 3 is an explanatory diagram illustrating oblique light components of irradiation light in the wafer alignment apparatus according to this embodiment.
For example, as shown in FIG. 3A, with respect to the oblique light component in the radial direction of the wafer W, the angle θ1 with respect to the normal direction of the wafer W should be, for example, about 85° at maximum. is preferred. By irradiating oblique light at such an angle, it is possible to reliably obtain a sufficient contrast image as described above.
Further, it is conceivable that the oblique light component in the circumferential direction of the wafer W also has the same irradiation angle as the above-described oblique light component in the radial direction. However, as for the oblique light component in the circumferential direction of the wafer W, since the line portions 22a and 22b are separately arranged, the following may be adopted. That is, the line portions 22a and 22b of the LED lights 22 are distributed with the line sensor 21 interposed therebetween, thereby forming side illumination of the wafer W in the circumferential direction. Therefore, in each of the line portions 22a and 22b, for example, as shown in FIG. When the light-emitting elements are arranged in this manner, the light from each of the line portions 22a and 22b is emitted from a direction in which the angle θ2 with respect to the main surface of the wafer W is, for example, 60°±20°, more preferably 60°±15°. is irradiated. This makes it possible to use a light-emitting element with high light directivity while ensuring that a sufficient contrast image as described above can be obtained. In other words, it is preferable that the line portions 22a and 22b are distributed and arranged at such intervals that light can be emitted from the directions as described above.
Note that the specific irradiation angles of the oblique light components listed here are merely examples, and are not limited to these. In other words, the irradiation angle of the oblique light component, the arrangement intervals of the line portions 22a and 22b, and the like are determined based on the specifications of the light-emitting elements that make up the LED light 22, the focal length when the line sensor 21 performs the imaging process, and the like. Above, it should just be set suitably as needed.

(Specific example of wavelength of illumination light)
In imaging processing by the line sensor 21, the illumination light emitted by the LED light 22 can be light (white light) including the entire wavelength range of visible light (approximately 380 nm to 750 nm), for example. However, for example, if the LED light 22 supports selection of wavelengths, light of a specific wavelength within the wavelength range of visible light may be selectively emitted.

Light of a specific wavelength is light of a wavelength or wavelength range corresponding to a part of the wavelength range of visible light, and refers to light of an arbitrary preset wavelength or wavelength range. Specifically, for example, in the case of irradiating only the light of the R component among the RGB components, the light of the wavelength range of 600 nm to 750 nm, more preferably the light of 630 nm ± 15 nm, corresponds to the light of the specific wavelength. . Further, for example, in the case of irradiating only the light of the G component among the RGB components, light in the wavelength range of 490 nm to 550 nm, more preferably light of 520 nm±15 nm, corresponds to the light of the specific wavelength. Further, for example, in the case of irradiating only the light of the B component among the RGB components, light in the wavelength range of 380 nm to 480 nm, more preferably light of 465 nm±10 nm, corresponds to the light of the specific wavelength. Of course, the light of the specific wavelength is not limited to light of any one of the RGB components, and may be light of a wavelength or wavelength range corresponding to color components other than RGB. It may be light of a wavelength or a wavelength band in which the color components of are combined.

In addition, selective irradiation means to select and irradiate only light of a specific wavelength. The selection may be fixed or variable.

Here, the relationship between the wavelength of the irradiated light and the contrast image will be described with a specific example.
FIGS. 4A and 4B are explanatory diagrams showing specific examples of contrast images, which are imaging results of a wafer. FIG. ) shows an example of an image obtained when a wafer is irradiated with only G component light, and (c) shows an example of an image obtained when a wafer is irradiated with white light containing RGB color components. is.
Note that each example shown in FIGS. 4(a) to 4(c) is based on various imaging conditions such as the wafer W to be imaged, the irradiation time of the illumination light, the pulse width, the duty ratio, etc., except for the wavelength of the light to be irradiated. are all the same.

For example, in the example shown in FIG. 4A, for each of the outer peripheral edge (edge) of the wafer W, the orientation specifying portion (notch), and the identification code (character code), an image having a large contrast difference with respect to the background (that is, a sufficient However, the pattern formed on the surface of the wafer W tends to be reflected. Further, for example, in the example shown in FIG. 4B, an image with a large contrast difference against the background is obtained for each of the outer peripheral edge (edge) of the wafer W, the orientation specifying portion (notch), and the identification code (character code). It is Further, for example, in the example shown in FIG. 4C, for the identification code (character code) of the wafer W, an image with a large contrast difference against the background is obtained. It can be seen that the azimuth specifying portion (notch) has a small difference in contrast against the background and is difficult to see.

As described above, even if the imaging process is performed on the same wafer W under the same imaging conditions except for the wavelength of the irradiated light, contrast images, which are imaging results, may differ depending on the wavelength of the irradiated light. This means that if light with a wavelength suitable for acquiring the imaging results from the wafer W is used, it is possible to obtain a sufficient contrast image as the imaging results for the wafer W. FIG. For example, in the case of the above-described example, as shown in FIG. Sufficient contrast images can be obtained for each of the orientation specifying portion (notch) and the identification code (character code).

That is, for example, even under imaging conditions in which a sufficient contrast image cannot be obtained with white light, a sufficient contrast image can be obtained by selectively irradiating light of a specific wavelength. Therefore, by selectively irradiating light of a specific wavelength, it is possible to use light suitable for acquiring the imaged result from the wafer W in the imaging process by the line sensor 21. As a result, the outer peripheral edge of the wafer W can be (edge), direction specifying portion (notch), and identification code (character code) are all very useful for proper detection.

However, the wavelength or wavelength range of light of a specific wavelength is not uniquely specified. For example, if the specifications of the wafer W to be imaged, the film formation state, etc. are different, the wavelength or wavelength range that is the specific wavelength may also be different. Further, if the specifications, imaging conditions, etc. of the line sensor 21 and the LED light 22 are different, the wavelength or wavelength range that becomes the specific wavelength may also be different. In other words, if the wavelength or wavelength range of the light of the specific wavelength is set in advance according to the imaging conditions (especially the wafer W to be imaged) based on the results of previous simulations, experiments, etc. good.

Moreover, the light of the specific wavelength may be light of a wavelength or a wavelength range in which a plurality of color components are combined, as described above. That is, the LED light 22 may irradiate light of a plurality of wavelengths or wavelength ranges as the light of the specific wavelength. In that case, for example, if the LED light 22 is compatible with a variable light intensity balance, light of each wavelength or each wavelength range may be emitted with a predetermined intensity balance.

For example, at least two of the RGB color components correspond to light having a plurality of wavelengths or wavelength ranges. However, it is not limited to RGB color components, and may correspond to color components other than RGB.

Predetermined intensity balance means that the intensity balance of light of each wavelength or each wavelength band has a predetermined relationship. The predetermined relationship may be any relationship set in advance, but it particularly means that the respective intensity balances are non-uniform. Specifically, for example, when combining each color component of RGB as light of a specific wavelength, the duty (lighting time) of the R component light is about 75% to 85%, and the G component light is 50% to 60%. It is conceivable to irradiate by adjusting the respective relationships so that the duty of the light of the B component is about 40% to 50%. However, this does not exclude the case where the respective intensity balances are all the same. Note that the predetermined relationship may be fixed or variable.

In this way, by irradiating light of each wavelength or each wavelength band with a predetermined intensity balance, it is possible to use a combination of light with an intensity balance suitable for obtaining an imaging result from the wafer W. FIG. That is, for example, even under imaging conditions where it is difficult to obtain a sufficient contrast image with only light of a certain wavelength or wavelength range, a sufficient contrast image can be obtained as an imaging result of the wafer W to be imaged. will be available. Therefore, by irradiating light of each wavelength or each wavelength range with a predetermined intensity balance, it is possible to use light suitable for acquiring the imaging result from the wafer W in the imaging process by the line sensor 21, and as a result, , the edge of the wafer W, the orientation specifying portion (notch), and the identification code (character code).

As for the light of the specific wavelength as described above, the control unit 30 may determine the wavelength or wavelength range (including the intensity balance of each wavelength or each wavelength range). In that case, it is conceivable that the control section 30 determines the specific wavelength according to the wafer W to be imaged.

Specifically, the PC cooperating with the control unit 30 stores and retains in advance, for example, information regarding the type, specification, film formation state, etc. of the wafer W, and information regarding the corresponding specific wavelength, in association with each other. back. When information about the wafer W to be imaged is received from a host device (not shown), an operation panel, or the like, the wavelength of the light emitted from the LED light 22 to the wafer W is determined based on the stored information. In this way, the PC, in cooperation with the control unit 30, makes decisions about specific wavelengths.

After determining the specific wavelength, the controller 30 performs wavelength control processing of the light emitted by the LED light 22 . For example, if the LED light 22 has a light-emitting element for each color component, the control unit 30 drives each light-emitting element in the LED light 22 so that only the light-emitting element corresponding to the determined specific wavelength emits light. Control. If the intensity balance is to be adjusted, the drive of each light emitting element is individually controlled. As a result, the LED light 22 irradiates the wafer W with the light of the specific wavelength while following the operation control process performed by the controller 30 .

As described above, if the PC that cooperates with the control unit 30 is configured to determine the specific wavelength in accordance with the wafer W, the image of the wafer W can be captured regardless of what wafer W is to be imaged. The specific wavelength can be appropriately adjusted according to the type, specification, film formation state, and the like. Therefore, in the imaging process by the line sensor 21, a sufficient contrast image can be obtained, and any of the outer peripheral edge (edge) of the wafer W, the orientation specifying portion (notch), and the identification code (character code) can be appropriately obtained. It is very useful for detection. Moreover, since any wafer W can be appropriately handled, versatility in handling the wafer W can be sufficiently ensured. This is very useful especially when the wafer alignment device is mounted on a semiconductor manufacturing device, a substrate transfer device, or the like. This is because there is a high possibility that various wafers W will be processed in a semiconductor manufacturing process using a semiconductor manufacturing apparatus, a substrate transfer apparatus, and the like.

(3) Effects of this embodiment According to this embodiment, one or more of the following effects can be obtained.

(a) In the present embodiment, each of the outer peripheral edge E of the wafer W, the azimuth specifying portion, and the identification code can be detected based on the imaging result of one line sensor 21 . Therefore, it is possible to perform non-contact alignment processing of the wafer W using these detection results quickly and accurately.
Moreover, in the present embodiment, the LED light 22 that irradiates illumination light to the location to be imaged by the line sensor 21 is composed of side illumination in the circumferential direction of the wafer W, side illumination in the radial direction of the wafer W, have. Therefore, in the imaging process by the line sensor 21, a sufficient contrast image can be obtained for each of the outer peripheral edge E of the wafer W, the orientation specifying portion, and the identification code. Therefore, the control unit 30 can appropriately detect any of the outer peripheral edge E of the wafer W, the orientation specifying portion, and the identification code, even if it is based on the result of imaging by the single line sensor 21 . .
In other words, according to the present embodiment, it is possible to appropriately detect any of the plurality of predetermined elements such as the outer peripheral edge E of the wafer W, the orientation specifying portion, and the identification code.

(b) In the present embodiment, the movement mechanism section 16 moves the relative position between the wafer W and the sensor unit section 20 when the line sensor 21 performs the imaging process. Therefore, even if it is necessary to obtain an image pickup result over the entire circumference of the wafer W, the line sensor 21 that picks up only a partial area of the wafer W instead of the entire wafer W can be used by providing the moving mechanism section 16. Therefore, the size of the sensor unit section 20 can be reduced. Further, even when the line sensor 21 picks up an image of only a partial area of the wafer W, it is possible to obtain an image pick-up result over the entire circumference of the wafer W by providing the moving mechanism unit 16. Detection of the edge E, the azimuth specifying portion, and the identification code is not hindered.

(c) In the present embodiment, the line sensor 21 is used for imaging processing, so a simple and inexpensive device configuration can be realized. In addition, as for the band-shaped area extending in the radial direction of the wafer W, the imaging result can be obtained in a single imaging, so that the imaging process can be speeded up compared to the case where scanning with a monocular camera is required, for example.

(d) As described in the present embodiment, the LED light 22 that emits the illumination light required for the imaging process selectively emits light of a specific wavelength within the wavelength range of visible light as the illumination light. Then, the light suitable for obtaining the imaging result from the wafer W can be used. Therefore, during the imaging process by the line sensor 21, a sufficient contrast image can be obtained according to the wafer W, and as a result, all of the outer peripheral edge of the wafer W, the azimuth specifying portion, and the identification code can be detected appropriately. It will be very useful in doing so.

(e) As described in the present embodiment, the LED light 22 that irradiates illumination light necessary for imaging processing emits light of a plurality of wavelengths or wavelength ranges as light of a specific wavelength, and each wavelength or By irradiating light in each wavelength range with a predetermined intensity balance, it is possible to use a combination of light with an intensity balance suitable for obtaining an imaging result from the wafer W. FIG. That is, for example, even under imaging conditions where it is difficult to obtain a sufficient contrast image with only light of a certain wavelength or wavelength range, a sufficient contrast image can be obtained. Therefore, during the imaging process by the line sensor 21, a sufficient contrast image can be obtained according to the wafer W, and as a result, all of the outer peripheral edge of the wafer W, the azimuth specifying portion, and the identification code can be detected appropriately. It will be very useful in doing so.

(f) As described in the present embodiment, when the LED light 22 emits light of a specific wavelength, the control unit 30 determines the specific wavelength (including the light intensity balance of each wavelength or each wavelength range). If the cooperating PC performs this, it is possible to appropriately adjust the specific wavelength according to the type, specification, film formation state, etc. of the wafer W, regardless of the wafer W to be imaged. Therefore, a sufficient contrast image can be obtained in the imaging process by the line sensor 21, which is very useful for appropriately detecting any of the outer peripheral edge of the wafer W, the azimuth specifying portion, and the identification code. Become. Moreover, since any wafer W can be appropriately handled, versatility in handling the wafer W can be sufficiently ensured.

(g) In this embodiment, the linear LED lights 22 extending in the radial direction of the wafer W are used. More specifically, the line-shaped LED light 22 has line portions 22 a and 22 b extending in the radial direction of the wafer W along the line sensor 21 , and the plurality of line portions 22 a and 22 b illuminate the wafer W with the line sensor 21 interposed therebetween. are distributed and arranged in the circumferential direction of the By using such an LED light 22, a simple and inexpensive device configuration can be realized. Moreover, the linear LED lights 22 can achieve both circumferential side lighting and radial side lighting.

(h) In this embodiment, the imaging unit 21 and the illumination unit 22 are arranged parallel to the main surface of the wafer W. As shown in FIG. Therefore, the arrangement can be very suitable for obtaining sufficient contrast images for each of the outer peripheral edge E of the wafer W, the orientation specifying portion, and the identification code. becomes very useful.

(i) The wafer alignment apparatus described in this embodiment is used by being mounted on, for example, a semiconductor manufacturing apparatus, a substrate transfer apparatus, or the like. Therefore, the wafer alignment apparatus can perform the alignment process quickly and accurately, so that the processing throughput, reliability, and the like can be improved in the semiconductor manufacturing apparatus, the substrate transfer apparatus, and the like. In addition, by realizing miniaturization and cost reduction of the wafer alignment apparatus, it becomes easy to realize miniaturization and cost reduction of the semiconductor manufacturing apparatus and the substrate transfer apparatus. In addition, there is a high possibility that various wafers W will be processed in the semiconductor manufacturing apparatus, the substrate transfer apparatus, and the like. And it becomes possible to respond appropriately.

<Other embodiments>
Next, another embodiment of the present disclosure will be described. Here, differences from the above-described one embodiment will be mainly described, and descriptions of the points that are not different will be omitted.

In the above-described embodiment, the case of controlling the wavelength (including the light intensity balance of each wavelength or each wavelength range) of the illumination light emitted by the LED light 22 was taken as an example. In addition to or apart from such wavelength control, embodiments control the light intensity of the light from each light-emitting element in the LED light 22 . Light intensity here refers to the amount of light energy (unit: joule), the amount of light (unit: lumen/second), the amount of illuminance (unit: lux), and the amount of luminous intensity (unit: candela). or any combination thereof.

FIG. 5 is an explanatory diagram showing an example configuration of a main part of a wafer alignment apparatus according to another embodiment.
As shown, the LED light 22 in the wafer alignment apparatus described here has a plurality of light emitting elements. Further, among the light emitting elements arranged in the radial direction of the wafer W, a certain light emitting element and other light emitting elements are configured to irradiate light with different light intensities. A difference in light intensity can be realized, for example, by using different wirings to connect a certain light emitting element and another light emitting element.

Specifically, for example, as shown in FIG. 5A, among the light emitting elements arranged in the radial direction of the wafer W, the light emitting element located on the outer peripheral side of the wafer W (the outermost light emitting element in the example shown) The light intensity of the irradiation light is made stronger than the light intensity of the irradiation light from other light emitting elements. In this way, the reflected light component obtained at the outer peripheral edge E of the wafer W becomes stronger, so that a more sufficient contrast image can be obtained for the outer peripheral edge E, and the outer peripheral edge E can be detected. easier to do.

Further, as shown in FIG. 5B, for example, among the light emitting elements arranged in the radial direction of the wafer W, the light emitted from the light emitting element located on the inner peripheral side of the wafer W (the innermost light emitting element in the example shown) emits light. is made stronger than the light intensity of irradiation light from other light emitting elements. With this configuration, for example, when the wafer W is a wafer having a cross-sectional shape with a thick outer peripheral side, the component of the reflected light obtained at the thick boundary portion becomes strong. A sufficient contrast image can be obtained for the boundary portion, and the position of the boundary portion can be properly grasped. This is very useful not only for grasping the position of the boundary portion, but also for properly detecting the identification code arranged near the boundary portion.

In this way, if the light intensity of the light emitted from each of the light emitting elements arranged in the radial direction of the wafer W is made different, a stepped portion (for example, the outer circumference of the wafer W) of the wafer W in the area to be imaged by the line sensor 21 can be detected. Edge E, a thickness boundary portion in a wafer having a thicker cross-sectional shape on the outer peripheral side, etc.), the shape portion can be appropriately detected. In other words, it is very useful for properly detecting a plurality of predetermined elements such as the outer peripheral edge E of the wafer W, the orientation specifying portion, and the identification code.

The difference in light intensity as described above, that is, the light intensity of which light emitting element should be increased may be determined by the control unit 30 according to the wafer W to be imaged. Specifically, the PC that cooperates with the control unit 30 pre-stores, for example, information about the type, specification, film formation state, etc. of the wafer W and information about the position of each light-emitting element in the LED light 22 in association with each other. keep it. Then, when information about the wafer W to be imaged is received from a host device (not shown), an operation panel, or the like, it is determined which light emitting element to increase the light intensity of and how much to increase it based on the stored information. . With this configuration, a sufficient contrast image can be obtained during the imaging process by the line sensor 21 regardless of what kind of wafer W is to be imaged. It is extremely useful for appropriately detecting any of a plurality of predetermined elements such as a specific part and an identification code. Moreover, since any wafer W can be appropriately handled, versatility in handling the wafer W can be sufficiently ensured. This is very useful especially when the wafer alignment device is mounted on a semiconductor manufacturing device, a substrate transfer device, or the like. This is because there is a high possibility that various wafers W will be processed in a semiconductor manufacturing process using a semiconductor manufacturing apparatus, a substrate transfer apparatus, and the like.

When the light intensity of the light emitted by each light emitting element is made different, in order to appropriately detect any of a plurality of predetermined elements such as the outer peripheral edge E of the wafer W, the orientation specifying portion, and the identification code, each light emission It is preferable that the line sensor 21 having elements correspond to the side illumination of the wafer W in the circumferential direction and the radial direction. However, it is not necessarily limited to this. For example, even if the line sensor 21 does not correspond to the side lighting, the light intensity of the light emitted from each light emitting element arranged in the radial direction of the wafer W can be varied. , the stepped portion of the wafer W can be appropriately detected.

<Modifications, etc.>
Although one embodiment and another embodiment of the present disclosure have been specifically described above, the present disclosure is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the present disclosure. be.

In each of the above-described embodiments, the case where the outer peripheral edge of the wafer W, the orientation specifying portion, and the identification code are detected as the plurality of predetermined elements of the wafer W is exemplified, but the present disclosure is limited to this. never That is, the present disclosure does not necessarily need to detect all of the outer peripheral edge of the wafer W, the orientation specifying portion, and the identification code, and can be applied to the case of detecting at least two of them. Even in that case, by using side illumination in the circumferential direction and radial direction of the wafer W, a sufficient contrast image can be obtained, and any of at least two detection items can be detected appropriately. be able to.

In each of the above-described embodiments, the case where the movement mechanism 16 rotates the wafer W when moving the wafer W and the sensor unit 20 relative to each other is taken as an example, but the present disclosure is not limited to this. . That is, the relative positional movement between the wafer W and the sensor unit section 20 may be performed by moving the sensor unit section 20 side, or by moving both the wafer W and the sensor unit section 20. .

In each of the above-described embodiments, the case where the imaging process is performed using the line sensor 21 is exemplified, but the present disclosure is not limited to this. In other words, the imaging unit 21 that performs the imaging process may be configured using, for example, a monocular camera capable of scanning the imaging area instead of the line sensor.

In each of the above-described embodiments, the case where illumination light is emitted using the linear LED light 22 is taken as an example, but the present disclosure is not limited to this. In other words, the illumination unit 22 that irradiates the illumination light is composed of, for example, a plurality of point light sources that irradiate the imaged area from a plurality of directions, as long as it can achieve lateral illumination in the circumferential direction and the radial direction of the wafer W. may have been

In each of the above-described embodiments, the case where the LED light 22 irradiates light in the visible light wavelength range is mainly taken as an example, but the present disclosure is not limited to this. In other words, the wavelength range of the illumination light may be suitable for detection of the wafer W. FIG. For example, when the wafer W is a so-called transparent substrate having optical transparency, detection may be performed by irradiating illumination light having a corresponding wavelength (for example, a wavelength including an ultraviolet region).

In each of the above-described embodiments, a case in which the wafer alignment apparatus is mounted on a semiconductor manufacturing apparatus, a substrate transfer apparatus, or the like is used as an example, but the present disclosure is not limited to this. In other words, the wafer alignment device is not particularly limited in its application.

<Preferred Embodiment of the Present Disclosure>
Preferred aspects of the present disclosure are added below.

[Appendix 1]
According to one aspect of the present disclosure,
an imaging unit that captures an image of at least one main surface of the wafer including the outer peripheral edge of the wafer;
an illumination unit that irradiates an area to be imaged by the imaging unit with illumination light;
a detection unit that detects at least two of the position of the outer peripheral edge, the orientation specifying portion of the wafer, and the identification code formed on the main surface, based on the imaging result of the imaging unit;
In the wafer alignment apparatus, the illumination unit has side illumination in the circumferential direction of the wafer and side illumination in the radial direction of the wafer.

[Appendix 2]
Preferably,
A moving mechanism unit for moving the relative position between the wafer and the imaging unit,
The imaging unit defines a band-shaped area extending in a radial direction of the wafer as the area to be imaged,
The wafer alignment device according to Supplementary Note 1 is provided.

[Appendix 3]
Preferably,
The wafer alignment apparatus according to appendix 2 is provided, wherein the imaging unit is a line sensor.

[Appendix 4]
Preferably,
The wafer alignment apparatus according to any one of Appendices 1 to 3, wherein the illumination unit is configured to selectively irradiate light of a specific wavelength within a wavelength range of visible light as the illumination light. is provided.

[Appendix 5]
Preferably,
The illumination unit is configured to irradiate light of a plurality of wavelengths or wavelength ranges as the light of the specific wavelength, and to irradiate the light of each wavelength or each wavelength range with a predetermined intensity balance. A wafer alignment apparatus as described is provided.

[Appendix 6]
Preferably,
The wafer alignment apparatus according to appendix 4 or appendix 5 is provided, further comprising: a wavelength determining unit that determines the specific wavelength in the illumination unit according to the wafer.

[Appendix 7]
Preferably,
The lighting unit according to any one aspect of appendix 1 to appendix 6, wherein the illumination unit has a plurality of light-emitting elements, and is configured such that a certain light-emitting element and another light-emitting element irradiate light with different light intensities. A wafer alignment apparatus is provided.

[Appendix 8]
Preferably,
The wafer alignment apparatus according to any one aspect of Appendix 1 to Appendix 7 is provided, wherein the illumination unit is a linear LED light extending in a radial direction of the wafer.

[Appendix 9]
Preferably,
The wafer alignment apparatus according to any one of Appendices 1 to 8, wherein the imaging section and the illumination section are arranged in parallel with at least one main surface of the wafer.

[Appendix 10]
Preferably,
A semiconductor manufacturing apparatus including the wafer alignment apparatus according to any one of Appendices 1 to 9 is provided.

[Appendix 11]
Preferably,
There is provided a substrate transfer apparatus comprising the wafer alignment apparatus according to any one of Appendices 1 to 9.

[Appendix 12]
According to one aspect of the present disclosure,
an imaging unit that captures an image of at least one main surface of the wafer including the outer peripheral edge of the wafer;
an illumination unit that irradiates an area to be imaged by the imaging unit with illumination light;
a detection unit that detects at least two of the position of the outer peripheral edge, the orientation specifying portion of the wafer, and the identification code formed on the main surface, based on the imaging result of the imaging unit;
There is provided the wafer alignment apparatus, wherein the illumination section has a plurality of light-emitting elements, and is configured such that a certain light-emitting element and another light-emitting element irradiate light with different light intensities.

REFERENCE SIGNS LIST 11: base portion 12: post 13: tweezers 14: chuck portion 15: driving portion ⊚ 16: movement mechanism portion 20: sensor unit portion 21: imaging portion (line sensor) 22: illumination portion ( LED light), 22a, 22b... Line part, 30... Control part, E... Peripheral edge, W... Wafer

Claims (11)

an imaging unit that captures an image of at least one main surface of the wafer including the outer peripheral edge of the wafer;
an illumination unit that irradiates an area to be imaged by the imaging unit with illumination light;
a detection unit that detects at least two of the position of the outer peripheral edge, the orientation specifying portion of the wafer, and the identification code formed on the main surface, based on the imaging result of the imaging unit;
The wafer alignment apparatus, wherein the illumination unit includes side illumination in a circumferential direction of the wafer and side illumination in a radial direction of the wafer. A moving mechanism unit for moving the relative position between the wafer and the imaging unit,
The imaging unit defines a band-shaped area extending in a radial direction of the wafer as the area to be imaged,
2. The wafer alignment apparatus according to claim 1, wherein the moving mechanism moves at least one of the wafer and the imaging unit so that the area to be imaged extends over the entire circumference of the wafer. 3. The wafer alignment device according to claim 2, wherein the imaging section is a line sensor. The wafer alignment apparatus according to any one of claims 1 to 3, wherein the illumination unit is configured to selectively irradiate light of a specific wavelength within a wavelength range of visible light as the illumination light. . 4. The illumination unit is configured to irradiate light of a plurality of wavelengths or wavelength ranges as the light of the specific wavelength, and to irradiate the light of each wavelength or each wavelength range with a predetermined intensity balance. The wafer alignment device according to . 6. The wafer alignment apparatus according to claim 4, further comprising a wavelength determination unit that determines the specific wavelength in the illumination unit according to the wafer. 7. The illumination unit according to any one of claims 1 to 6, wherein the illumination unit has a plurality of light-emitting elements, and is configured such that a certain light-emitting element and another light-emitting element irradiate light with different light intensities. Wafer alignment equipment. The wafer alignment apparatus according to any one of claims 1 to 7, wherein the illumination unit is a linear LED light extending in a radial direction of the wafer. The wafer alignment apparatus according to any one of claims 1 to 8, wherein the imaging section and the illumination section are arranged parallel to at least one main surface of the wafer. A semiconductor manufacturing apparatus comprising the wafer alignment apparatus according to any one of claims 1 to 9. A substrate transfer apparatus comprising the wafer alignment apparatus according to any one of claims 1 to 9.

Images