JP2022160828A - Substrate processing method, element chip manufacturing method, resin film formation method, and resin film formation device - Google Patents

Abstract

To achieve a simply applicable step applicable even when a complicated structure exists on a surface of a substrate.SOLUTION: A substrate processing method includes: a preparation step of preparing a substrate 1 which has a first main surface 1X and a second main surface 1Y opposite to the first main surface 1X, and has an element area EA in the first main surface 1X and a division area DA having a groove 11 surrounding the element area EA; a spray step of spraying a raw material liquid for a resin film from a nozzle 32 toward the first main surface 1X of the substrate 1 arranged with the first main surface 1X facing downward, and thereby forming a resin film RF in the first main surface 1X so that a film thickness coating the element area EA becomes larger than a film thickness coating a bottom part 11a of the groove 11; and an etching step of etching the division area DA by plasma using the resin film RF as a mask.SELECTED DRAWING: Figure 3

Description

The present disclosure relates to a substrate processing method, an element chip manufacturing method, a resin film forming method, and a resin film forming apparatus.

Conventionally, a method of plasma dicing a substrate is known (for example, Patent Document 1). In the method of Patent Document 1, after the surface of the substrate is covered with a resin film such as photoresist, the resin film covering the streets is removed while leaving the resin film covering the device structure. The exposed streets are then plasma etched.

Japanese Patent Publication No. 2014-513868

However, the patterning process for removing the resin film covering the streets needs to be carried out using expensive devices such as a developing device and a laser device, taking time and effort. Construction of a simple process that can omit such a patterning process is desired. Under such circumstances, one object of the present disclosure is to realize a process that can be easily applied even when a complicated structure exists on the substrate surface.

One aspect of the present disclosure relates to a substrate processing method. The substrate processing method includes a first principal surface and a second principal surface opposite to the first principal surface, and has an element region and a division region having a groove surrounding the element region on the first principal surface. a preparation step of preparing a substrate; a spraying step of forming a resin film on the first main surface so that the film thickness covering the region is larger than the film thickness covering the bottom of the groove; and an etching step of etching with.

Another aspect of the present disclosure relates to a method of manufacturing an element chip. The manufacturing method includes a substrate having a first principal surface and a second principal surface opposite to the first principal surface, and having an element region and a division region having a groove surrounding the element region on the first principal surface. and spraying a raw material liquid for a resin film from a nozzle toward the first main surface of the substrate arranged with the first main surface facing downward, thereby performing the element region a spraying step of forming a resin film on the first main surface so that the film thickness of coating is larger than the film thickness of coating the bottom of the groove; and a plasma dicing step of dividing the substrate into a plurality of element chips by etching.

Another aspect of the present disclosure relates to a resin film forming method. The method of forming a resin film includes a first principal surface and a second principal surface opposite to the first principal surface, and an element region and a division region having grooves surrounding the element region on the first principal surface. a preparation step of preparing a substrate having the and a spraying step of forming a resin film on the first main surface such that the film thickness covering the element region is larger than the film thickness covering the bottom of the groove.

Another aspect of the present disclosure relates to a resin film forming apparatus. The resin film forming apparatus includes a first principal surface and a second principal surface opposite to the first principal surface, and has an element region and a division region having a groove surrounding the element region on the first principal surface. a resin film forming apparatus for forming a resin film on the first main surface of a substrate having a holding portion for holding the substrate with the first main surface facing downward; By spraying the raw material liquid for the resin film toward the first main surface, the resin is applied to the first main surface so that the film thickness covering the element region is larger than the film thickness covering the bottom of the groove. a nozzle for forming a membrane.

According to the present disclosure, it is possible to realize a process that can be easily applied even when a complicated structure exists on the substrate surface.

FIG. 4 is a top view schematically showing a transport carrier and substrates held thereon; FIG. 1B is a cross-sectional view along line BB shown in FIG. 1A; 2 is an enlarged cross-sectional view schematically showing the configuration of a substrate; FIG. 1 is a diagram schematically showing a resin film forming apparatus according to Embodiment 1; FIG. FIG. 4 is an enlarged cross-sectional view for explaining a spraying process; 4 is an enlarged cross-sectional view showing a substrate on which a resin film is formed; FIG. It is a schematic sectional drawing which shows the structure of a plasma processing apparatus typically. FIG. 4 is an enlarged cross-sectional view showing a state after the substrate has been etched; FIG. 6 is a diagram schematically showing a resin film forming apparatus according to Embodiment 2;

Embodiments of a resin film forming apparatus, a resin film forming method, a substrate processing method, and an element chip manufacturing method according to the present disclosure will be described below with examples. However, the disclosure is not limited to the examples described below. In the following description, specific numerical values and materials may be exemplified, but other numerical values and materials may be applied as long as the effects of the present disclosure can be obtained.

(Resin film forming device)
A resin film forming apparatus according to the present disclosure includes a holding section and a nozzle.

The holding part holds the substrate having the first main surface and the second main surface with the first main surface facing downward. The second main surface is the opposite main surface to the first main surface. The substrate has an element region and a division region having a groove surrounding the element region on the first main surface. The holding unit may be a stage that sucks and holds the substrate (or the substrate and the transport carrier).

In this specification, the state in which the first main surface of the substrate faces downward refers not only to the state in which the normal direction of the first main surface and the vertical direction match each other, but also the state in which the normal direction of the first main surface A state in which the vertical direction forms an angle with each other is also included. In this case, the angle formed by the normal direction of the first main surface and the vertical direction may be, for example, 0 to 60°.

The nozzle sprays the raw material liquid for the resin film toward the first main surface of the substrate held by the holding part. By spraying such a raw material liquid, the nozzle forms a resin film on the first main surface of the substrate such that the film thickness covering the element region is larger than the film thickness covering the bottom of the groove. Since the resin film is hardly formed on the bottom of the groove on the first main surface of the substrate, subsequent plasma processing can be performed without performing the patterning step of removing the resin film in the divided regions.

(Resin film forming method)
A resin film forming method according to the present disclosure includes a preparation process and a spray process.

In the preparation step, a substrate having the same configuration as above is prepared.

In the spraying step, the raw material liquid for the resin film is sprayed from the nozzle toward the first main surface of the substrate arranged with the first main surface facing downward. In the spraying step, the resin film is formed on the first main surface of the substrate by spraying such a raw material liquid so that the film thickness covering the element region is larger than the film thickness covering the bottom of the groove. Since the resin film is hardly formed on the bottom of the groove on the first main surface of the substrate, subsequent plasma processing can be performed without performing the patterning step of removing the resin film in the divided regions.

In addition, since the first main surface of the substrate faces downward, the sprayed material liquid for the resin film is prevented from flowing to the bottom of the groove. Therefore, even if a complicated structure exists on the first main surface of the substrate, the bottom of the groove is not covered with a thick resin film. On the other hand, with a known spin coating method or the like, when a complicated structure exists on the first main surface, it is difficult to remove only the resin film on the streets after covering the first main surface with the resin film.

(Substrate processing method)
The substrate processing method according to the present disclosure includes an etching process in addition to the preparation process and the spray process described above.

In the etching process, the divided regions are etched with plasma using the resin film formed in the spray process as a mask. As a result, the grooves in the divided regions can be dug even deeper. A patterning process may not be performed between the spray process and the etching process.

(Method for manufacturing element chip)
The method for manufacturing an element chip according to the present disclosure includes a plasma dicing process in addition to the preparation process and the spray process described above.

In the plasma dicing process, the resin film formed in the spray process is used as a mask to etch the dividing regions with plasma, thereby dividing the substrate into a plurality of element chips. Thereby, a plurality of element chips can be obtained at low cost. A patterning process may not be performed between the spray process and the plasma dicing process.

As described above, according to the present disclosure, it is possible to omit the patterning step of removing the resin film covering the divided regions or the streets after the resin film is formed. In addition, it is possible to realize a process that can be easily applied even when a complicated structure exists on the substrate surface. Furthermore, according to the present disclosure, multiple device chips can be manufactured at low cost from a substrate having a complex structure.

In the spraying step, the raw material liquid may be sprayed by the nozzle from a direction different from the normal direction of the first main surface. In other words, the raw material liquid may be sprayed obliquely with respect to the depth direction of the groove. In this case, at least part of the bottom of the groove is in a blind spot when viewed from the injection port of the nozzle. Therefore, while a relatively thick resin film is formed on the surface of the element region, a relatively thin resin film can be formed on the bottom of the groove, or no resin film can be formed on the bottom of the groove. .

In the spraying step, arctan (1/X) < θ, where θ is the angle formed by the direction of spraying of the raw material liquid by the nozzle and the normal direction of the first main surface, and X is the aspect ratio of the groove. may In this case, substantially the entire bottom of the groove is in the blind spot when viewed from the nozzle outlet. Therefore, it is possible to further reduce the thickness of the resin film formed on the bottom of the groove. The aspect ratio of the groove means a value given by D/W, where D is the depth of the groove and W is the opening width of the groove (X=D/W). In addition, the raw material liquid is ordinarily emitted in a conical shape from the apex of the injection port of the nozzle. The direction of spraying of the raw material liquid by the nozzle may be the direction of the cone axis of such a cone.

In the spraying step, the raw material liquid may be sprayed by the nozzle while rotating the substrate relative to the nozzle. In this case, the substrate may rotate, the nozzle may rotate, or both the substrate and the nozzle may rotate. The rotation of the substrate or nozzle may be about the normal line passing through the center of the substrate. Thereby, the resin film can be formed substantially uniformly over the entire element region of the first main surface.

In the spraying step, a nozzle cover having an opening formed thereon may be arranged between the nozzle and the substrate, and the raw material liquid may be sprayed by the nozzle through the opening of the nozzle cover. According to this configuration, the dripping raw material liquid can be caught at the opening edge of the nozzle cover. It is possible to prevent the sprayed raw material liquid from adhering to the injection port of the nozzle.

In the spraying process, part of the raw material liquid sprayed from the nozzle may be blocked by the nozzle cover. In this case, of the raw material liquid to be sprayed, it may be blocked that is going in a direction that makes a relatively small angle with respect to the normal direction of the first main surface. More specifically, the material liquid may be blocked from going in a direction that makes an angle smaller than arctan (1/X) with respect to the normal direction of the first main surface. This makes it possible to further reduce the thickness of the resin film formed on the bottom of the groove.

Hereinafter, examples of a resin film forming apparatus, a resin film forming method, a substrate processing method, and an element chip manufacturing method according to the present disclosure will be specifically described with reference to the drawings. The components or steps described above can be applied to the components of the resin film forming apparatus or the steps of the resin film forming method, the substrate processing method, and the element chip manufacturing method, which will be described below. The constituent elements of the resin film forming apparatus, or the steps of the resin film forming method, the substrate processing method, and the element chip manufacturing method, which will be described below, can be changed based on the above description. Also, the matters described below may be applied to the above embodiments. Among components of an example resin film forming apparatus or steps of a resin film forming method, a substrate processing method, and an element chip manufacturing method, the resin film apparatus, the resin film forming method, and the substrate processing according to the present disclosure are described below. Components and steps that are not essential to the method and method of manufacturing the device chip may be omitted. It should be noted that the drawings shown below are schematic and do not accurately reflect the actual shape and number of members.

<<Embodiment 1>>
The resin film forming apparatus 30 of this embodiment is an apparatus for forming a resin film RF on the surface of the substrate 1 . In the following, first, the substrate 1 on which the resin film is to be formed and the transport carrier 10 for transporting the substrate 1 will be described, and then the resin film forming apparatus 30, the resin film forming method, and the like will be described.

－Substrate and transfer carrier－
As shown in FIGS. 1A and 1B, the transport carrier 10 includes a holding sheet 3 and an annular frame 2 that supports the outer peripheral portion of the holding sheet 3 . The frame 2 may be provided with notches 2a and corner cuts 2b for positioning. The outer peripheral edge of the adhesive surface 3X of the holding sheet 3 is adhered to one surface of the frame 2. As shown in FIG. The second main surface 1Y of the substrate 1 is adhered to the portion of the adhesive surface 3X exposed through the opening of the frame 2. As shown in FIG.

As shown in FIG. 2, the substrate 1 has a first principal surface 1X and a second principal surface 1Y opposite to the first principal surface 1X. The substrate 1 has, on the first main surface 1X, a plurality of element regions EA and divided regions DA having grooves 11 surrounding each element region EA. The substrate 1 is transported together with the transport carrier 10 in a state where the second main surface 1Y is adhered to the holding sheet 3 and the first main surface 1X is exposed. The aspect ratio of the grooves 11 of the substrate 1 of this embodiment may be, for example, 5-20.

Although illustration is omitted, the substrate 1 may comprise a single layer or multiple layers. A single layer includes a semiconductor layer made of silicon or the like. The plurality of layers may include a device layer (or a circuit layer) made of a metal material or the like, in addition to the semiconductor layer. The device layer may constitute MEMS (Micro Electro Mechanical Systems).

-Resin film forming equipment-
As shown in FIG. 3 , the resin film forming apparatus 30 of this embodiment includes a holding stage 31 , a nozzle 32 and a nozzle cover 33 .

The holding stage 31 is a plate-like member arranged substantially horizontally. The holding stage 31 may be disc-shaped, for example. The holding stage 31 holds the substrate 1 and the carrier 10 (the carrier 10 is not shown) with the first main surface 1X facing downward. The holding stage 31 may hold the substrate 1 and the transport carrier 10 by vacuum suction, for example. The holding stage 31 is an example of a holding section.

The holding stage 31 is rotatable around its axis. In this example, the axis of the holding stage 31 is aligned with the vertical line, but it is not limited to this. For this purpose, the resin film forming apparatus 30 includes a rotating mechanism (not shown) that rotates the holding stage 31 . The rotation speed of the holding stage 31 may be, for example, 40-80 rpm.

The nozzle 32 forms the resin film RF on the first main surface 1X of the substrate 1 . More specifically, the nozzle 32 is formed on the first main surface 1X such that the thickness of the resin film RF covering the element area EA is larger than the thickness of the resin film RF covering the bottom portion 11a of the groove 11. A resin film RF is formed. The nozzle 32 is arranged with its injection port facing obliquely upward. The nozzle 32 sprays the raw material liquid RM for the resin film RF toward the first main surface 1X of the substrate 1 held by the holding stage 31 . The nozzle 32 sprays the raw material liquid RM while moving in the horizontal direction so as to spray the raw material liquid RM over the entire first main surface 1X of the substrate 1 . For this purpose, the resin film forming apparatus 30 has a moving mechanism (not shown) for moving the nozzle 32 .

The distance between the injection port of the nozzle 32 and the first main surface 1X of the substrate 1 may be, for example, 20-100 mm. This distance is selected from the viewpoint of forming the resin film RF satisfactorily.

The raw material liquid RM for the resin film RF may contain, for example, a resin material and a solvent that dissolves the resin material. Any resin material may be used as long as it is used as a resist material, and examples thereof include thermosetting resins such as polyimide, phenol resins, and acrylic resins. The solvent contained in the raw material liquid RM may be water, an organic solvent, or a mixture of water and an organic solvent. Most of the solvent contained in the raw material liquid RM may volatilize or evaporate during spraying from the nozzle 32 . Examples of highly volatile solvents include methyl ethyl ketone and propylene glycol monomethyl ether acetate.

The nozzle cover 33 is a plate-like member in which an opening 34 is formed. The opening 34 may have, for example, a circular shape, but is not limited to this. A nozzle cover 33 is arranged between the holding stage 31 and the nozzle 32 . The nozzle cover 33 may be horizontally movable together with the nozzle 32 so that the positional relationship between the injection port of the nozzle 32 and the opening 34 is substantially constant.

-Resin film forming method-
The resin film forming method is performed using the resin film forming apparatus 30 described above. The resin film forming method includes a preparation process and a spray process.

In the preparation step, the substrate 1 described above is prepared. The substrate 1 may be prepared while being held by the transport carrier 10 .

In the spraying step, as shown in FIGS. 3 and 4, the raw material liquid for the resin film RF is sprayed from the nozzle 32 toward the first main surface 1X of the substrate 1 arranged with the first main surface 1X facing downward. Spray RM. As a result, as shown in FIG. 5, the resin film RF covering the element region EA is thicker than the resin film RF covering the bottom portion 11a of the groove 11. A resin film RF is formed. The thickness of the resin film RF decreases in the order of the surface of the element area EA, the sidewall of the trench 11, and the bottom 11a of the trench 11. As shown in FIG. In FIG. 5, the bottom portion 11a of the groove 11 is shown without the resin film RF, but the bottom portion 11a of the groove 11 has a resin film RF thinner than the resin film RF covering the element area EA. may be formed.

In the spraying process, the nozzle 32 sprays the raw material liquid RM from a direction different from the normal direction of the first main surface 1X of the substrate 1 . Here, let θ be the angle between the direction of spraying of the raw material liquid RM by the nozzle 32 and the normal direction of the first main surface 1X (see FIG. 4), and let X be the aspect ratio of the grooves 11, arctan ( 1/X)<θ may hold. For example, when the depth of the groove 11 is 100 μm, the opening width of the groove 11 is 20 μm, and the aspect ratio is 5 (X=5), the angle θ may be greater than about 11.3° (θ>11 .3°).

In the spraying process, the raw material liquid RM may be sprayed while rotating the holding stage 31 . In other words, the nozzle 32 may spray the raw material liquid RM while rotating the substrate 1 relative to the nozzle 32 . Although illustration is omitted, if the substrate 1 and the nozzle 32 rotate relative to each other, only the nozzle 32 may be rotated, or both the substrate 1 and the nozzle 32 may be rotated.

In the spraying process, the nozzle cover 33 may be arranged between the nozzle 32 and the substrate 1 , and the nozzle 32 may spray the raw material liquid RM through the opening 34 of the nozzle cover 33 . Here, part of the raw material liquid RM sprayed from the nozzle 32 may be blocked by the nozzle cover 33 . In this case, the raw material liquid RM that is going in a direction that makes an angle smaller than arctan (1/X) with respect to the normal direction of the first main surface 1X of the substrate 1 may be blocked.

-Method of manufacturing element chip-
The element chip manufacturing method includes a plasma dicing step in addition to the steps of the resin film forming method described above. Here, the plasma processing apparatus 100 used in the plasma dicing process will be specifically described with reference to FIG. However, the plasma processing apparatus is not limited to this.

The plasma processing apparatus 100 has a stage 111 . The substrate 1 is placed on the stage 111 with the transport carrier 10 supporting it so that the first main surface 1X faces upward. Here, the transport carrier 10 includes a holding sheet 3 that holds the substrate 1 from the second main surface 1Y side, and a frame 2 to which the holding sheet 3 is fixed. The stage 111 has a size that allows the entire transport carrier 10 to be placed thereon.

A cover 124 having a window portion 124W for exposing at least a portion of the substrate 1 is arranged above the stage 111 while covering at least a portion of the frame 2 and the holding sheet 3 . The cover 124 is provided with a pressing member 107 for pressing the frame 2 when the frame 2 is placed on the stage 111 .

Stage 111 and cover 124 are located within vacuum chamber 103 . Vacuum chamber 103 is generally cylindrical with an open top. The upper opening is closed by a dielectric member 108 that is a lid. Examples of the material forming the vacuum chamber 103 include aluminum, stainless steel (SUS), and aluminum whose surface is anodized. Examples of materials forming the dielectric member 108 include dielectric materials such as yttrium oxide (Y ₂ O ₃ ), aluminum nitride (AlN), alumina (Al ₂ O ₃ ), and quartz (SiO ₂ ). A first electrode 109 as an upper electrode is arranged above the dielectric member 108 . The first electrode 109 is electrically connected to the first high frequency power supply 110A. The stage 111 is arranged on the bottom side inside the vacuum chamber 103 .

The vacuum chamber 103 is provided with a gas inlet 103a. A process gas source 112 and an ashing gas source 113, which are plasma generating gas supply sources, are connected to the gas inlet 103a by pipes. Further, the vacuum chamber 103 is provided with an exhaust port 103b. A decompression mechanism 114 including a vacuum pump for decompressing the gas in the vacuum chamber 103 is connected to the exhaust port 103b. Plasma is generated in the vacuum chamber 103 by supplying high-frequency power to the first electrode 109 from the first high-frequency power supply 110A while the process gas is being supplied into the vacuum chamber 103 .

The stage 111 includes a substantially circular electrode layer 115, a metal layer 116, a base 117 supporting the electrode layer 115 and the metal layer 116, and an outer peripheral portion 118 surrounding the electrode layer 115, the metal layer 116, and the base 117. and The outer peripheral portion 118 is made of a metal having electrical conductivity and etching resistance, and protects the electrode layer 115, the metal layer 116, and the base 117 from plasma. An annular outer ring 129 is arranged on the upper surface of the outer peripheral portion 118 . The outer ring 129 serves to protect the upper surface of the outer peripheral portion 118 from plasma. The electrode layer 115 and the outer ring 129 are made of, for example, the dielectric material described above.

Inside the electrode layer 115, an electrode for electrostatic chuck (hereinafter referred to as an ESC electrode 119) and a second electrode 120 electrically connected to the second high-frequency power source 110B are arranged. . A DC power supply 126 is electrically connected to the ESC electrode 119 . ESC electrode 119 and DC power supply 126 constitute an electrostatic attraction mechanism. The holding sheet 3 is pressed against the stage 111 and fixed by the electrostatic adsorption mechanism. A case where an electrostatic attraction mechanism is provided as a fixing mechanism for fixing the holding sheet 3 to the stage 111 will be described below as an example, but the fixing mechanism is not limited to this. Fixation of the holding sheet 3 to the stage 111 may be performed by a clamp (not shown).

The metal layer 116 is made of, for example, aluminum with an alumite coating formed on its surface. A coolant channel 127 is formed in the metal layer 116 . The stage 111 is cooled by the coolant flowing through the coolant channel 127 . By cooling the stage 111 , the holding sheet 3 mounted on the stage 111 is cooled, and the cover 124 partly in contact with the stage 111 is also cooled. This prevents the substrate 1 and the holding sheet 3 from being damaged by being overheated during plasma processing. The refrigerant in refrigerant flow path 127 is circulated by refrigerant circulation device 125 .

A plurality of support portions 122 that penetrate the stage 111 are arranged near the outer periphery of the stage 111 . The support portion 122 supports the frame 2 of the transport carrier 10 . The support portion 122 is driven up and down by a lifting mechanism 123A. When the transport carrier 10 is transported into the vacuum chamber 103, it is handed over to the support part 122 which has been raised to a predetermined position. The transport carrier 10 is mounted at a predetermined position on the stage 111 by lowering the upper end surface of the support portion 122 to the same level as the stage 111 or lower.

A plurality of lifting rods 121 are connected to the ends of the cover 124 so that the cover 124 can be lifted. The lifting rod 121 is driven up and down by a lifting mechanism 123B. The lifting operation of the cover 124 by the lifting mechanism 123B can be performed independently of the lifting mechanism 123A.

The control device 128 controls the first high-frequency power source 110A, the second high-frequency power source 110B, the process gas source 112, the ashing gas source 113, the pressure reduction mechanism 114, the refrigerant circulation device 125, the lifting mechanism 123A, the lifting mechanism 123B, and the electrostatic adsorption mechanism. control the operation of the components of the plasma processing apparatus 100, including; The control device 128 includes an arithmetic device and a storage device in which programs executable by the arithmetic device are stored.

In the plasma dicing process, the division area DA is etched with plasma using the resin film RF formed in the spray process as a mask.

In the plasma dicing process, an etching step of etching the substrate 1, a deposition step of depositing a protective film, and at least a portion of the protective film (for example, a portion of the protective film deposited on the bottom portion 11a of the groove 11) is removed. The substrate 1 is dug by repeating the protective film removing step.

In the etching step, for example, while supplying 200 to 400 sccm of SF ₆ as a raw material gas, the pressure inside the vacuum chamber 103 is adjusted to 5 to 25 Pa, and the power applied from the first high frequency power supply 110A to the first electrode 109 is 1500. 5000 W, the power applied from the second high frequency power supply 110B to the second electrode 120 is 20 to 500 W, and the etching time is 8 to 15 seconds.

In the deposition step, for example, while supplying 150 to 250 sccm of C ₄ F ₈ as a raw material gas, the pressure inside the vacuum chamber 103 is adjusted to 15 to 25 Pa, and power is applied from the first high frequency power supply 110A to the first electrode 109. is 1500 to 5000 W, the power applied from the second high-frequency power source 110B to the second electrode 120 is 0 to 50 W, and the deposition time is 2 to 10 seconds.

In the protective film removing step, the power applied to the second electrode 120 is made larger than that in the etching step. This allows anisotropic etching. In the protective film removing step, for example, while supplying SF ₆ as a raw material gas at 200 to 400 sccm, the pressure in the vacuum chamber 103 is adjusted to 5 to 25 Pa, and power is applied from the first high frequency power supply 110A to the first electrode 109. is 1500 to 5000 W, the power applied from the second high-frequency power source 110B to the second electrode 120 is 80 to 800 W, and the processing time is 2 to 5 seconds.

As described above, the substrate 1 is divided into a plurality of element chips 20 as shown in FIG. After that, the resin film RF may be removed by a known method. For example, when the resin film RF is a resist mask, the resin film RF may be removed by ashing.

<<Modification of Embodiment 1>>
A modification of the first embodiment will be described. In this modification, the plasma processing apparatus 100 is used to perform the etching process instead of the plasma dicing process.

In the etching process, the divided regions are etched with plasma using the resin film RF formed in the spray process as a mask. As a result, the trench 11 in the divided area DA is deeply dug. Bosch or non-Bosch processes may be used for etching.

<<Embodiment 2>>
A second embodiment will be described. This embodiment differs from the first embodiment in the configuration of the resin film forming apparatus 30 . Differences from the first embodiment will be mainly described below.

As shown in FIG. 8, in the resin film forming apparatus 30 of this embodiment, the holding stage 31 is arranged to be inclined with respect to the horizontal plane, and the nozzle 32 is arranged so that the spray direction is vertically upward. The holding stage 31 is rotatable around its axis. The axis of the holding stage 31 is inclined with respect to the vertical line. The nozzle 32 is configured to spray the raw material liquid RM for the resin film RF while moving in the horizontal direction.
<<Reference example>>
A resin film forming apparatus of a reference example will be described. Although illustration is omitted, the resin film forming apparatus of the reference example includes a holding stage that holds the substrate 1 with the first main surface 1X of the substrate 1 facing upward, and a holding stage that holds the substrate 1 on the first main surface 1X. By spraying the raw material liquid RM of the resin film RF toward the main surface 1X, the first main surface 1X is sprayed so that the film thickness covering the element region EA is larger than the film thickness covering the bottom portion 11a of the groove 11. and a nozzle for forming the resin film RF in.

INDUSTRIAL APPLICABILITY The present disclosure can be used for a substrate processing method, an element chip manufacturing method, a resin film forming method, and a resin film forming apparatus.

1: Substrate 1X: First main surface 1Y: Second main surface 11: Groove 11a: Bottom 10: Transport carrier 2: Frame 2a: Notch 2b: Corner cut 3: Holding sheet 3X: Adhesive surface 20: Element chip 30: Resin Film forming apparatus 31: holding stage (holding unit)
32: Nozzle 33: Nozzle cover 34: Opening 100: Plasma processing apparatus 103: Vacuum chamber 103a: Gas introduction port 103b: Exhaust port 107: Pressing member 108: Dielectric member 109: First electrode 110A: First high-frequency power supply 110B: Second high-frequency power supply 111: stage 112: process gas source 113: ashing gas source 114: decompression mechanism 115: electrode layer 116: metal layer 117: base 118: outer peripheral portion 119: ESC electrode 120: second electrode 121: lifting rod 122: Support 123A, 123B: Elevating mechanism 124: Cover 124W: Window 125: Refrigerant circulation device 126: DC power supply 127: Refrigerant flow path 128: Control device 129: Outer ring DA: Divided area EA: Element area RF: Resin Membrane RM: Raw material liquid

Claims (9)

preparing a substrate having a first principal surface and a second principal surface opposite to the first principal surface, and having an element region on the first principal surface and a division region having a groove surrounding the element region; When,
By spraying a raw material liquid for a resin film from a nozzle toward the first main surface of the substrate arranged with the first main surface facing downward, the film thickness covering the element region is reduced to the above a spraying step of forming a resin film on the first main surface so as to be larger than the film thickness covering the bottom of the groove;
an etching step of etching the divided regions with plasma using the resin film as a mask;
A substrate processing method comprising: 2. The substrate processing method according to claim 1, wherein in said spraying step, said nozzle sprays said raw material liquid from a direction different from a normal direction of said first main surface. In the spraying step, arctan (1/X), where θ is the angle formed by the direction of spraying of the raw material liquid by the nozzle and the normal direction of the first main surface, and X is the aspect ratio of the groove. 3. The substrate processing method according to claim 2, wherein <[theta] holds. 4. The substrate processing method according to claim 1, wherein in said spraying step, said nozzle sprays said raw material liquid while rotating said substrate relative to said nozzle. The method according to any one of claims 1 to 4, wherein in the spraying step, a nozzle cover having an opening formed thereon is disposed between the nozzle and the substrate, and the raw material liquid is sprayed by the nozzle through the opening. The substrate processing method according to any one of claims 1 to 3. 6. The substrate processing method according to claim 5, wherein in said spraying step, part of said raw material liquid sprayed from said nozzle is blocked by said nozzle cover. preparing a substrate having a first principal surface and a second principal surface opposite to the first principal surface, and having an element region on the first principal surface and a division region having a groove surrounding the element region; When,
By spraying a raw material liquid for a resin film from a nozzle toward the first main surface of the substrate arranged with the first main surface facing downward, the film thickness covering the element region is reduced to the above a spraying step of forming a resin film on the first main surface so as to be larger than the film thickness covering the bottom of the groove;
a plasma dicing step of dividing the substrate into a plurality of element chips by etching the divided regions with plasma using the resin film as a mask;
A method of manufacturing an element chip, comprising: preparing a substrate having a first principal surface and a second principal surface opposite to the first principal surface, and having an element region on the first principal surface and a division region having a groove surrounding the element region; When,
By spraying a raw material liquid for a resin film from a nozzle toward the first main surface of the substrate arranged with the first main surface facing downward, the film thickness covering the element region is reduced to the above a spraying step of forming a resin film on the first main surface so as to be larger than the film thickness covering the bottom of the groove;
A resin film forming method comprising: The first main surface of a substrate having a first main surface and a second main surface opposite to the first main surface, and having an element region and a division region having a groove surrounding the element region on the first main surface. A resin film forming apparatus for forming a resin film on a surface,
a holding part that holds the substrate with the first main surface facing downward;
By spraying the raw material liquid for the resin film toward the first main surface of the held substrate, the film thickness covering the element region becomes larger than the film thickness covering the bottom of the groove, a nozzle for forming the resin film on the first main surface;
A resin film forming apparatus comprising:

Images