JP2022156381A - Support member, substrate holding member, and manufacturing method thereof - Google Patents

Abstract

To provide a support member, a substrate holding member, and a manufacturing method thereof which do not cause stress problems after bonding and can adjust the symmetry of the temperature distribution of a substrate by adjusting the heat insulating properties of the support member.SOLUTION: A support member 100 is formed in a cylindrical shape from a ceramic sintered body containing AlN as a main component, and the support member 100 is composed of a first region 101 and a second region 102, the thermal conductivity of the first region 101 at 25°C is 100 W/mK or more, and the thermal conductivity of the second region 102 at 25°C is 80 W/mK or less.SELECTED DRAWING: Figure 1

Description

The present invention relates to a support member, a substrate holding member, and a manufacturing method thereof.

A heater plate (substrate holding member) in which a heating resistor is embedded has been used as a member for a semiconductor manufacturing apparatus. The heater plate can heat the placed substrate.

Patent document 1 includes a base body having a heating surface and a heating element inside, and a cylindrical member having a lead wire for introducing a current to the heating element inside and connected to the back surface of the heating surface. , the thermal conductivity of the substrate is 1.0 to 2.0 times the thermal conductivity of the cylindrical member, the thermal conductivity of the substrate is 60 to 220 W/m·K, and the thermal conductivity of the cylindrical member is The heating device is disclosed to have a thermal conductivity of 60 to 200 W/m·K, and to have aluminum nitride as a main component of the substrate and the cylindrical member. The plate and shaft are bonded in a firing furnace by a direct bonding method. According to the technique described in Patent Document 1, it is described that it is possible to provide a heating device in which the temperature on the plate surface becomes uniform and cracks do not occur due to temperature difference and thermal expansion coefficient difference.

Patent Document 2 discloses a support structure in which a wafer holder having an electric circuit embedded in a ceramic sintered body is supported by a cylindrical support member, and a flange component having a screw thread is attached to the wafer holder. , a support structure for a wafer holder characterized in that a screw thread provided on a cylindrical support member is screwed into a screw thread of the flange component, and a wafer holder, a flange component, and a cylindrical support member. The difference in thermal expansion coefficient between them is 2.0×10 ⁻⁶ /K or less. The material of the wafer holder is aluminum nitride. The material of the flange part and the cylindrical support member is aluminum nitride, mullite-alumina. It is stated that any one of composites, silicon carbide, silicon nitride, and alumina may be used. It is described that this can reduce the generation of particles and prevent the wafer holder, the flange part, or the cylindrical support member from being damaged during heating.

JP 2005-285355 A JP 2008-153413 A

Because of the shape of the AlN ceramic heater with a shaft, it is difficult to integrally manufacture it (near net shape), and the heater plate and shaft are manufactured separately and then joined together. At this time, the plate and shaft are manufactured by combining members made of the same or different materials depending on the temperature and environment in which the heater is used. If the heater plate portion and the shaft portion are made of different materials before they are integrated, uneven stress is likely to occur in the vicinity of the joint surface due to a difference in coefficient of linear expansion, in particular, after joining. And the nonuniformity of the stress affects the reliability of the heater with the shaft after bonding. In addition, when a heater with a shaft is used, the heat of the heater plate portion is conducted through the shaft, so the thermal insulation of the shaft portion affects the symmetry of the temperature distribution on the substrate mounting surface.

Therefore, the heater with a shaft, which is manufactured by joining the heater plate portion and the shaft portion, does not cause problems with stress after joining, and it is possible to adjust the symmetry of the temperature distribution by adjusting the heat insulation of the shaft portion. I was hoping it could be done.

However, although Patent Documents 1 and 2 consider uniformly heating the substrate, they do not consider adjusting the heat insulation of the shaft portion to adjust the symmetry of the temperature distribution.

SUMMARY OF THE INVENTION The present invention has been made in view of such circumstances, and provides a support that does not cause problems with stress after bonding and that can adjust the symmetry of the temperature distribution of the substrate by adjusting the heat insulating properties of the support member. An object of the present invention is to provide a member, a substrate holding member, and a method of manufacturing the same.

(1) In order to achieve the above objects, the support member of the present invention is a support member, the support member is formed in a cylindrical shape from a ceramic sintered body containing AlN as a main component, and the support member is , a first region and a second region, wherein the thermal conductivity of the first region at 25 ° C. is 100 W / mK or more, and the thermal conductivity of the second region at 25 ° C. is 80 W / mK It is characterized by the following.

Thus, by providing the support member with portions having different thermal conductivities, it is possible to adjust the heat insulation of the support member (heat flow through the support member). As a result, the symmetry of the temperature distribution on the mounting surface of the substrate holding member can be adjusted.

(2) In addition, in the supporting member of the present invention, the concentration of the Y component in terms of Y ₂ O ₃ contained in the first region is 0.4 wt % or more and 5 wt % or less, and is contained in the second region. The Y ₂ O ₃ conversion concentration of the Y component is characterized by being 0.1 wt % or less.

Thus, by providing portions with different Y concentrations in the AlN support member, portions with different thermal conductivities can be provided. As a result, the thermal insulation properties of the support member can be adjusted through multiple heat transfer properties.

(3) Further, in the support member of the present invention, one end of the support member is configured by the first region, and the other end of the support member is configured by the second region. Characterized by

In this way, the support member has different thermal conductivities at one end and the other end, that is, by arranging the portions of the support member having different thermal conductivity characteristics in the vertical direction of the support member. Heat flow through can be controlled.

(4) Further, the substrate holding member of the present invention is a substrate holding member, which is composed of a ceramic sintered body containing AlN as a main component, a plate-shaped electrode-embedded member in which an electrode is embedded, and a support member made of a ceramic sintered body having an enlarged diameter portion provided at the end on the electrode embedded member side and a cylindrical portion smaller in diameter than the enlarged diameter portion and supporting the electrode embedded member; Further, the heat conductivity of the end portion of the enlarged diameter portion is different from the heat conductivity of the end portion facing the enlarged diameter portion.

Thus, the heat conductivity of the end portion of the enlarged diameter portion and the end portion of the side facing the enlarged diameter portion are different, that is, the portion of the support member having different heat conduction characteristics is configured in the vertical direction of the support member. allows for control of heat flow through the support member. As a result, the heat transfer between the electrode-embedded member and the support member can be adjusted, and the symmetry of the temperature distribution on the substrate mounting surface can be adjusted.

(5) Further, in the substrate holding member of the present invention, the concentration of the Y component in terms of Y ₂ O ₃ contained in the end portion of the enlarged diameter portion is 0.4 wt % or more and 5 wt % or less, and the enlarged diameter portion and A Y ₂ O ₃ conversion concentration of the Y component contained in the end portion on the opposite side is characterized by being 0.1 wt % or less.

In this way, by providing portions with different Y concentrations in the vertical direction of the AlN support member, it is possible to provide portions with different thermal conductivities in the vertical direction. You can actually configure the parts.

(6) Further, in the substrate holding member of the present invention, the _{Y2O3 -} equivalent concentration of the Y component contained in the electrode _- embedded member is Y2 It is characterized by being substantially the same as the _O3 conversion concentration.

In this way, since the concentration of the Y component converted to Y ₂ O ₃ at the ends of the enlarged diameter portions of the electrode-embedded member and the supporting member is substantially the same, the bonding strength of the bonding surface is stable and the substrate holding member has high reliability. becomes.

(7) Further, a method for manufacturing a substrate holding member according to the present invention is a method for manufacturing a substrate holding member, in which a first ceramic raw material powder containing AlN as a main component and having an adjusted amount of a sintering aid is used. A step of forming one or more first ceramic compacts, and adjusting the amount of a sintering aid containing AlN as a main component to be less than the amount of the sintering aid added to the first ceramic raw powder, Alternatively, a step of forming one or more second ceramic compacts from a second ceramic raw material powder to which no sintering aid is added; A step of forming a support member precursor by combining the ceramic molded bodies of No., a step of firing the support member precursor to produce a support member, and a sintering aid containing AlN as a main component and a predetermined amount of addition of a sintering aid a step of forming a plurality of third ceramic compacts from the third ceramic raw material powder obtained; and preparing an electrode, combining the electrode and the plurality of third ceramic degreased bodies to form a flat plate having a mounting surface on one main surface, the electrode a step of forming an electrode-embedded member precursor in which is embedded; a step of uniaxially pressing and firing the electrode-embedded member precursor in a direction perpendicular to the main surface to produce an electrode-embedded member; The support member is placed at the joint where the support member on the lower surface facing the mounting surface is joined, and heated while being pressurized in the direction perpendicular to the main surface, or a joint material is prepared and the electrode-embedded member. The bonding material is applied to at least one of the bonding portion for bonding the support member and the end surface to which the support member is bonded on the lower surface facing the mounting surface of the, and the support member is arranged at the bonding portion, joining the electrode-embedded member and the support member by heating while applying pressure in a direction perpendicular to the main surface, wherein the first ceramic molded body of the support member is fired. The region has a thermal conductivity of 100 W/mK or more at 25°C, and the second region in which the second ceramic molded body of the support member is fired has a thermal conductivity of 80 W/mK or less at 25°C. It is characterized by something

As a result, the support member can be provided with portions having different thermal conductivities, and the heat insulating property (heat flow flowing through the support member) of the support member can be adjusted. You will be able to control your sexuality.

(8) Further, the method for manufacturing a substrate holding member of the present invention is a method for manufacturing a substrate holding member, comprising a first ceramic raw powder containing AlN as a main component and having an adjusted amount of a sintering aid added. , and AlN as main components, and the amount of the sintering aid added is adjusted to be less than the amount of the sintering aid added in the first ceramic raw material powder, or the sintering aid is not added. and one of the first ceramic raw powder and the second ceramic raw powder is put into a mold and temporarily molded, and the other is further put into the mold and temporarily molded by repeating the steps one or more times. a step of forming a supporting member precursor; a step of firing the supporting member precursor to produce a supporting member; forming a plurality of third ceramic compacts from powder; and degreasing the plurality of third ceramic compacts at a predetermined temperature or higher for a predetermined time or longer to produce a plurality of third ceramic degreased compacts. a step of preparing an electrode, combining the electrode and the plurality of third ceramic degreased bodies, forming an electrode-embedded member having a mounting surface on one main surface, formed into a flat plate shape, and embedding the electrode; a step of forming a precursor; a step of uniaxially pressing and firing the electrode-embedded member precursor in a direction perpendicular to the main surface to produce an electrode-embedded member; The support member is placed at the joint where the support member on the lower surface is joined, and is heated while being pressurized in the direction perpendicular to the main surface, or a joint material is prepared and faces the mounting surface of the electrode-embedded member. The bonding material is applied to at least one of the joint portion of the lower surface where the support member is joined or the end face of the support member to be joined, the support member is arranged at the joint portion, and the support member is applied in the direction perpendicular to the main surface. joining the electrode-embedded member and the support member by heating while pressing, wherein the first region of the support member, in which the first ceramic compact is fired, is heat conductive at 25°C. is 100 W/mK or more, and the second region of the support member where the second ceramic compact is fired has a thermal conductivity of 80 W/mK or less at 25°C.

As a result, the support member can be provided with portions having different thermal conductivities, and the heat insulating property (heat flow flowing through the support member) of the support member can be adjusted. You will be able to control your sexuality.

According to the present invention, the heat insulation of the support member can be adjusted, and the symmetry of the temperature distribution on the mounting surface of the substrate holding member can be adjusted.

It is a typical sectional view showing an example of a support member concerning an embodiment of the present invention. 4(a) to 4(f) are schematic cross-sectional views showing modifications of the support member according to the embodiment of the present invention, respectively. FIG. 1 is a schematic cross-sectional view showing an example of a substrate holding member according to an embodiment of the invention; FIG. FIG. 5 is a schematic cross-sectional view showing a modification of the substrate holding member according to the embodiment of the invention; 4 is a flow chart showing an example of a method for manufacturing a substrate holding member according to an embodiment of the present invention; 4(a) to 4(c) are cross-sectional views schematically showing one stage of the manufacturing process of the support member according to the embodiment of the present invention, respectively. FIG. 4(a) to 4(c) are cross-sectional views schematically showing different stages of the manufacturing process of the support member according to the embodiment of the present invention. FIG. 4(a) to 4(d) are cross-sectional views schematically showing one stage of the manufacturing process of the substrate holding member according to the embodiment of the present invention, respectively. FIG. 4A and 4B are cross-sectional views schematically showing one stage of the manufacturing process of the substrate holding member according to the embodiment of the present invention, respectively; FIG.

Next, embodiments of the present invention will be described with reference to the drawings. In order to facilitate understanding of the description, the same reference numerals are given to the same components in each drawing, and overlapping descriptions are omitted. In addition, in the configuration diagram, the size of each component is conceptually represented, and does not necessarily represent the actual size ratio.

[Embodiment]
[Configuration of Supporting Member]
First, the configuration of the support member according to the embodiment of the present invention will be described. FIG. 1 is a schematic cross-sectional view showing an example of a support member according to an embodiment of the invention. A support member 100 according to an embodiment of the present invention is formed in a cylindrical shape from a ceramic sintered body containing AlN as a main component. Having AlN as a main component means that the ceramic sintered body contains 90 wt % or more of AlN.

The support member 100 is composed of a first region 101 and a second region 102 . The thermal conductivity at 25° C. of the first region 101 is 100 W/mK or more, and the thermal conductivity of the second region 102 at 25° C. is 80 W/mK or less. Thus, by providing the support member 100 with portions having different thermal conductivities, the heat insulation of the support member 100 (heat flow flowing through the support member 100) can be adjusted. As a result, the symmetry of the temperature distribution on the mounting surface of the substrate holding member can be adjusted. The symmetry of the temperature distribution on the mounting surface of the substrate holding member means a predetermined temperature gradient from the center to the outer periphery of the mounting surface.

2(a) to 2(f) are schematic cross-sectional views showing modifications of the support member according to the embodiment of the present invention. The shape of the support member 100 and the position of the boundary between the first region 101 and the second region 102 that constitute the support member 100 may vary as shown in FIGS. 2(a) to 2(f). . The first region 101 may be only the enlarged diameter portion, or the first region may extend to the middle of the cylindrical portion. Further, the enlarged diameter portion may be omitted, or the flange portion facing the enlarged diameter portion may be omitted. Further, the enlarged diameter portion may be formed by the first region 101 and the second region 102, or the enlarged diameter portion may have a step. Also, the enlarged diameter portion may be formed in the second region 102, or, although not shown, at least one of the first region 101 or the second region 102 may be formed apart. By configuring the support member 100 with regions having different thermal conductivities in this way, the heat insulating properties of the support member 100 can be adjusted. In addition, it is also possible to design the region constituting the support member 100 in consideration of both the bonding with the electrode-embedded member and the thermal conductivity.

The ceramic sintered bodies forming the first region 101 and the second region 102 have the same main component, AlN, and have approximately the same degree of shrinkage during sintering. The interface between the first region 101 and the second region 102 is strongly bonded. Further, since the thermal expansion coefficients of the first region 101 and the second region 102 are approximately the same when the substrate holding member including the supporting member 100 is used, there is no risk of cracks or the like occurring at the interface even after repeated use. can be reduced.

The Y ₂ O ₃ equivalent concentration of the Y component contained in the first region 101 is preferably 0.4 wt % or more and 5 wt % or less. Thereby, when Y ₂ O ₃ is used as the sintering aid, the thermal conductivity of the first region 101 at 25° C. can be easily adjusted to 100 W/mK or more. Further, the Y ₂ O ₃ equivalent concentration of the Y component contained in the second region 102 is preferably 0.1 wt % or less. Thereby, when Y ₂ O ₃ is used as the sintering aid, the thermal conductivity at 25° C. of the second region 102 can be easily adjusted to 80 W/mK or less. In addition, by providing portions with different Y concentrations in the AlN support member 100 in this manner, portions with different thermal conductivities can be easily provided. As a result, the heat insulating properties of the support member 100 can be adjusted by combining heat conduction properties.

The fact that the Y ₂ O ₃ equivalent concentration of the Y component contained in the second region 102 is 0.1 wt % or less includes 0 wt % where the Y component is not substantially added. When the Y component is not substantially added means that the Y component is not added as a sintering aid, and the Y component is included as an impurity and the Y ₂ O ₃ conversion concentration is less than 10 ppm. is substantially 0 wt %.

Ceramic sintered bodies containing AlN as a main component have _high thermal conductivity and _are excellent in heat resistance and plasma resistance. Since it is known that the thermal conductivity is also lowered, the thermal conductivity can be easily adjusted. Therefore, by forming the first region 101 and the second region 102 from a ceramic sintered body containing AlN as a main component, the thermal conductivity is adjusted for each region, and a support excellent in heat resistance and plasma resistance can be obtained. Member 100 can be constructed.

Preferably, one end of the support member 100 is configured with the first region 101 and the other end of the support member 100 is configured with the second region 102 . In this way, one end and the other end of the support member 100 have different thermal conductivities, that is, by arranging the portions of the support member 100 having different thermal conductivity characteristics in the vertical direction of the support member 100, Heat flow through the support member 100 can be controlled.

The support member of the present invention can adjust the heat insulation (heat flow flowing through the support member), and can adjust the symmetry of the temperature distribution on the mounting surface of the substrate holding member.

[Structure of Substrate Holding Member]
Next, the configuration of the substrate holding member according to the embodiment of the present invention will be described. FIG. 3 is a schematic cross-sectional view showing an example of a substrate holding member according to an embodiment of the invention. A substrate holding member 200 according to an embodiment of the present invention includes an electrode embedded member 120 and a support member 100 . The substrate holding member 200 of the present invention is applied to heaters with shafts, electrostatic chucks with shafts, and the like.

The electrode-embedded member 120 is made of a ceramic sintered body containing AlN as a main component, and formed in a flat plate shape. Having AlN as a main component means that the ceramic sintered body contains 90 wt % or more of AlN. The electrode-embedded member 120 has a mounting surface 122 on which the substrate is mounted on one principal surface. Moreover, the shape of the electrode-embedded member 120 can be various shapes such as a disk shape, a polygonal shape, and an elliptical shape.

A ceramic sintered body containing AlN as a main component has high thermal conductivity and is excellent in heat resistance and plasma resistance. Therefore, by forming the electrode-embedded member 120 from a ceramic sintered body containing AlN as a main component, the electrode-embedded member 120 having excellent heat resistance and plasma resistance can be configured.

The electrode 130 is embedded inside the electrode embedding member 120 . The shape of the electrode 130 can be various shapes such as a mesh shape and a foil shape. Also, various materials such as molybdenum and tungsten can be used.

The electrode-embedded member 120 may have a plurality of electrodes 130 . For example, by providing a heater electrode and an electrostatic adsorption electrode, the substrate holding member 200 can be used as an electrostatic chuck with a heater.

The support member 100 is made of a ceramic sintered body containing AlN as a main component, and has an enlarged diameter portion 112 provided at the end on the side of the electrode embedding member 120 and a cylindrical portion 114 having a smaller diameter than the enlarged diameter portion. Support member 120 . Having AlN as a main component means that the ceramic sintered body contains 90 wt % or more of AlN. In FIG. 3, the end portion 116 on the side facing the enlarged diameter portion is also a flange portion having a larger diameter than the cylindrical portion 114, like the enlarged diameter portion 112. The holding member 200 is not limited to this.

The thermal conductivity of the end portion of the enlarged diameter portion 112 of the support member 100 is different from the thermal conductivity of the end portion 116 on the side facing the enlarged diameter portion. In this way, the end portion of the enlarged diameter portion 112 and the end portion 116 on the side facing the enlarged diameter portion have different thermal conductivities, that is, the portions of the support member 100 having different thermal conductivity characteristics are arranged in the vertical direction of the support member 100 . , the heat flow through the support member 100 can be controlled. As a result, the heat transfer between the electrode-embedded member 120 and the support member 100 can be adjusted, and the symmetry of the temperature distribution on the mounting surface 122 of the substrate can be adjusted. The end portion of the enlarged diameter portion refers to a predetermined region of the enlarged diameter portion 112 of the support member 100 on the side of the electrode-embedded member 120. 112 as a whole.

FIG. 4 is a schematic cross-sectional view showing a modification of the substrate holding member according to the embodiment of the invention. As shown in FIG. 4, in the substrate holding member 200, the boss 118 and the supporting member 100 may be joined when the electrode-embedded member 120 and the supporting member 100 are joined. In this case, the boss 118 is formed as part of the electrode-embedded member 120 in the manufacturing process, but in the substrate holding member 200 of the present invention, the boss 118 joined to the support member 100 is part of the support member 100. , that is, the enlarged diameter portion 112 . Thus, when boss 118 is formed, the thermal conductivity of boss 118 is equal to the thermal conductivity of the end of enlarged diameter portion 112 . Therefore, also in this case, the thermal conductivity of the end portion of the enlarged diameter portion 112 is different from the thermal conductivity of the end portion 116 on the side facing the enlarged diameter portion. In this case, the end of enlarged diameter portion 112 includes boss 118 and is the predetermined area beyond boss 118 .

The Y ₂ O ₃ converted concentration of the Y component contained in the end portion of the enlarged diameter portion 112 of the support member 100 is 0.4 wt % or more and 5 wt % or less, and is contained in the end portion 116 on the side facing the enlarged diameter portion 112 . It is preferable that the concentration of the Y component converted to Y ₂ O ₃ is 0.1 wt % or less. Thus, by providing portions with different Y concentrations in the vertical direction of the AlN support member 100, it is possible to provide portions with different thermal conductivity in the vertical direction, and the heat flow passing through the support member 100 is controlled. The substrate holding member 200 can actually be constructed.

When the boss 118 is not formed, the Y ₂ O ₃ -converted concentration of the Y component contained in the joint portion 124 of the electrode-embedded member 120 and the support member 100 is the Y component contained in the end portion of the enlarged-diameter portion 112 of the support member 100 . is preferably substantially the same as the Y ₂ O ₃ converted concentration of As described above, since the concentration of the Y component converted to Y ₂ O ₃ at the joint portion 124 of the electrode-embedded member 120 and the end portion of the enlarged-diameter portion 112 of the support member 100 is substantially the same, the joint strength of the joint surface is stabilized. The substrate holding member 200 is highly reliable. Note that the Y ₂ O ₃ equivalent concentrations of the Y components are substantially the same means that the difference in the Y ₂ O ₃ equivalent concentrations of the respective Y components is 0.1 wt % or less.

The substrate holding member 200 has necessary terminals 140 and terminal holes 142 in addition to the above. Thereby, power can be supplied to the electrode 130 .

The substrate holding member of the present invention can adjust the heat insulating properties of the supporting member (heat flow flowing through the supporting member), and can adjust the symmetry of the temperature distribution on the mounting surface of the substrate holding member.

[Manufacturing method of substrate holding member]
Next, a method for manufacturing a substrate holding member according to an embodiment of the present invention will be described. FIG. 5 is a flow chart showing an example of a method for manufacturing a substrate holding member according to an embodiment of the invention. As shown in FIG. 5, the method for manufacturing a substrate holding member according to the embodiment of the present invention comprises a supporting member precursor forming step STEP1, a supporting member precursor firing step STEP2, a third ceramic compact forming step STEP3, and a third A ceramic degreased body preparation step STEP4, an electrode-embedded member precursor formation step STEP5, an electrode-embedded member precursor firing step STEP6, and a bonding step STEP7.

In a support member precursor forming step STEP1, a support member precursor 30 is formed which is composed of ceramic raw material powder containing AlN as a main component and having different amounts of sintering aids added. Although various methods are conceivable for forming the supporting member precursor 30 composed of ceramic raw material powder containing AlN as a main component and having different amounts of the sintering aid added, for example, the following method can be used. 6A to 6C are cross-sectional views schematically showing one stage of the manufacturing process of the support member according to the embodiment of the present invention.

In the first ceramic molded body forming step STEP1-1, one or more first ceramic molded bodies 11 are formed from a first ceramic raw powder containing AlN as a main component and having an adjusted amount of sintering aid added. do. For example, Y 2 O 3 as the Y component of the sintering aid, additives such as Y ₂ O ₃ , a binder, a plasticizer, and a dispersant are appropriately added to the ceramic raw powder and mixed to prepare a slurry, and the granules are formed by a spray drying method or the like. After granulating the (first ceramics raw material powder), it is possible to form one or a plurality of first ceramics compacts 11 by pressure molding. The Y component of the sintering aid may be Y ₂ O ₃ , or an oxide containing Y such as YAG, YAP, YAM, Y ₂ O ₃ is added as a result of sintering. You may

The ceramic raw material powder preferably has a high purity, and the purity is preferably 96% or higher, more preferably 98% or higher. Also, the average particle size of the ceramic raw material powder is preferably 0.1 μm or more and 1.0 μm or less.

The mixing method may be either wet or dry, and mixers such as ball mills and vibrating mills may be used. As the molding method, for example, a known method such as uniaxial pressure molding or cold isostatic pressing (CIP) method may be used. The method of forming the first ceramic molded body 11 is not limited to pressure molding, and green sheet lamination, slip casting, or extrusion molding, for example, can also be applied.

In the second ceramic compact formation step STEP1-2, AlN is the main component, and the amount of the sintering aid added is adjusted to be less than the amount of the sintering aid added to the first ceramic raw material powder, or sintering is performed. One or a plurality of second ceramic compacts 12 are formed from the second ceramic raw powder to which no auxiliary agent is added. The details of the method for producing the second ceramic raw material powder and the method for forming the second ceramic compact 12 may be the same as in the first ceramic compact forming step STEP1-1.

After molding, the one or more first ceramic molded bodies 11 may be shaped by machining. Also, one or more of the second ceramic molded bodies 12 may be shaped by machining after molding.

At this time, the shape may be arranged so that a part of one ceramic molded body is accommodated in the accommodation space provided in the other ceramic molded body. Also, at this time, the shrinkage rate of the ceramic molded body provided with the housing space may be larger than the shrinkage rate of the ceramic molded body partially housed in the housing space. As a result, the ceramic molded body provided with the housing space shrinks more during sintering, so that the outer shape of the housing space becomes smaller than the outer shape of a part of the ceramic molded body in which the housing space is provided, and the housing space is reduced in the abutting portion. There is no gap between the sintered ceramic molded body provided and the sintered ceramic molded body housed, and they are in close contact with each other. The difference in shrinkage rate is preferably 0.3% or less.

For example, the shrinkage ratio can be varied by changing the bulk density by changing the molding pressure when molding the ceramic molded bodies 11 and 12, such as CIP pressure, casting pressure, and extrusion pressure. Also, the shrinkage ratio can be made different by changing the ceramic particle size, the binder ratio, etc., which are the raw materials of the ceramic compacts 11 and 12 .

FIG. 6( a ) shows that the first ceramic compact 11 and the second ceramic compact 12 are machined so that a part of the second ceramic compact 12 is accommodated in the first ceramic compact 11 . It shows how it looks.

In the combining step STEP1-3, one or more first ceramic molded bodies 11 and one or more second ceramic molded bodies 12 are combined to form a supporting member precursor 30. FIG. By doing so, it is possible to form the support member precursor 30 composed of the ceramic raw material powder containing AlN as the main component and having different amounts of the sintering aid added.

Further, the supporting member precursor 30 composed of ceramic raw material powder containing AlN as a main component and having different amounts of sintering aid added may be formed by, for example, the following method. FIGS. 7A to 7C are cross-sectional views schematically showing different stages of the manufacturing process of the support member according to the embodiment of the present invention.

In the ceramic raw material powder preparation step 1′-1, a first ceramic raw powder containing AlN as a main component and having an adjusted amount of sintering aid added, and a first ceramic raw powder having AlN as a main component and having an added amount of sintering aid A second ceramic raw powder is prepared in which the amount of the sintering aid added is smaller than that of the first ceramic raw powder, or in which no sintering aid is added. The details of the method for producing the first ceramic raw powder and the second ceramic raw powder in this step may be the same as in the first ceramic compact forming step STEP1-1.

In the supporting member precursor forming step 1′-2, one of the first ceramic raw powder and the second ceramic raw powder is put into a mold for provisional molding, and the other is further put into the mold for temporary molding once. By repeating the above steps, the support member precursor 30 is formed. By doing so, the support member precursor 30 composed of the first region 101 and the second region 102 containing AlN as a main component and having different amounts of the sintering aid added can be formed.

It should be noted that the shape of the temporarily molded support member precursor 30 may be adjusted by machining after the temporary molding. Further, the temporarily molded support member precursor 30 may be temporarily molded in a simplified shape such as a columnar shape or a cylindrical shape, and the shape of the enlarged diameter portion and the like may be adjusted by machining.

The area where the ceramic sintered body obtained by sintering the first ceramic raw material powder is arranged is called a first area 101, and the area where the ceramic sintered body obtained by sintering the second ceramic raw material powder is arranged is called a first area 101. It is called a second area 102 . That is, in the supporting member precursor forming step STEP1, the region where the first ceramic molded body 11 is arranged becomes the first region 101 after sintering, and the region where the second ceramic molded body 12 is arranged becomes after sintering. It becomes the second area 102 . The first region 101 of the supporting member 100 where the first ceramic compact 11 is fired has a thermal conductivity of 100 W/mK or more at 25°C. Also, the second region 102 of the support member 100 where the second ceramic compact 12 is fired has a thermal conductivity of 80 W/mK or less at 25°C.

In the supporting member precursor baking step STEP2, the supporting member precursor 30 is baked to bake the supporting member 100 that supports the electrode embedded member 120 . Firing of the support member 100 is preferably normal pressure firing. Also, the firing temperature is preferably 1800° C. or higher and 2000° C. or lower. The firing time is preferably 1 hour or more and 12 hours or less. The firing atmosphere is, for example, a nitrogen or inert gas atmosphere, but may be a vacuum atmosphere.

In the third ceramic molded body forming step STEP3, a plurality of third ceramic molded bodies 13 are formed from a third ceramic raw powder containing AlN as a main component and to which a predetermined amount of sintering aid is added. The details of the method for producing the third ceramic raw material powder and the method for forming the third ceramic compact 13 may be the same as in the first ceramic compact forming step STEP1-1. 8A to 8D and 9A and 9B are cross-sectional views schematically showing one stage of the manufacturing process of the substrate holding member according to the embodiment of the present invention.

In the third ceramic molded body forming step STEP3, a part of the ceramic molded body is a fourth ceramic raw material containing AlN as a main component and a sintering aid added in a predetermined amount different from the third ceramic raw material powder. One or more fourth ceramic compacts may be formed from the powder. In this case, the number of third ceramic molded bodies 13 may be one. That is, a plurality of third ceramic molded bodies and fourth ceramic molded bodies may be produced together. Also, in this case, the description of the third ceramic molded body hereinafter may be applied to the fourth ceramic molded body.

After molding, the plurality of third ceramic molded bodies 13 may be shaped by machining. Also, a groove having a shape matching the shape of the electrode 130 may be formed on one side of the third ceramic molded body 13 (the joint surface with the other third ceramic molded body 13). A groove having a shape matching the shape of the electrode 130 may be formed on one side of each of the two third ceramic molded bodies 13 . Machining may be performed after degreasing.

In the third ceramic degreased body manufacturing step STEP4, the plurality of third ceramic degreased bodies 23 are manufactured by degreasing the plurality of third ceramic compacts 13 at a predetermined temperature or higher for a predetermined time or longer. For example, it is heat-treated at a temperature of 500° C. or higher and 900° C. or lower to form the third ceramic degreased body 23 . The degreasing time is preferably from 1 hour to 120 hours. An air furnace or a nitrogen atmosphere furnace can be used for degreasing, but an air furnace is preferred.

In the electrode-embedded member precursor forming step STEP5, the electrode 130 is prepared, and the electrode 130 and the plurality of third ceramic degreased bodies 23 are combined to form a flat plate having a mounting surface 122 on one main surface. , to form the electrode-embedded member precursor 40 in which the electrode 130 is embedded.

The electrode 130 is prepared by processing into a shape according to the design of the substrate holding member 200 . The shape of the electrode 130 can be various shapes such as a mesh shape and a foil shape. Also, various materials such as molybdenum and tungsten can be used.

In the electrode-embedded member precursor firing step STEP6, the formed electrode-embedded member precursor 40 is uniaxially pressed and fired in the direction perpendicular to the main surface to fabricate the electrode-embedded member 120 . The pressure to be applied is preferably 1 MPa or more. Also, the firing temperature is preferably 1700° C. or higher and 2000° C. or lower. The firing time is preferably 1 hour or more and 12 hours or less, more preferably 1 hour or more and 5 hours or less. The firing atmosphere is, for example, a nitrogen or inert gas atmosphere, but may be a vacuum atmosphere. As a result, the plurality of third ceramic degreased bodies 23 are sintered to form ceramic sintered bodies, which are integrated to obtain the electrode-embedded member 120 in which the electrodes 130 are embedded.

In the joining step STEP7, the electrode-embedded member 120 and the support member 100 are joined. For joining, either a joining method using a joining material or a joining method not using a joining material can be used.

First, a bonding method using a bonding material will be described. First, a bonding material 150 is prepared, and the bonding material is applied to at least one of the bonding portion 124 on the lower surface of the supporting member 100 facing the mounting surface 122 of the electrode-embedded member 120 and the end surface of the supporting member 100 on the bonding portion side. do. The joint portion 124 and the end face of the support member 100 on the joint portion side are preferably polished to a surface roughness Ra of 1.6 μm or less, more preferably 0.4 μm or less. The thickness of the applied bonding material is preferably 5 μm or more and 30 μm or less. Next, the support member 100 is placed on the joint 124 and heated while being pressurized in the direction perpendicular to the main surface (mounting surface 122). The pressing force is preferably 5 kPa or more. Also, the heating temperature is preferably 1500° C. or higher and 1800° C. or lower. The heating time is preferably 0.5 hours or more and 5 hours or less. The heating atmosphere is, for example, a nitrogen or inert gas atmosphere, but may be an atmosphere such as a vacuum. Thereby, the electrode-embedded member 120 and the support member 100 can be joined.

At this time, regarding the composition of the joint portion 124 of the electrode-embedded member 120 to be joined and the support member 100, the Y component converted to Y ₂ O ₃ is preferably substantially the same in both. When they are substantially the same, the components contained in the bonding material diffuse symmetrically to both the bonding portion of the electrode-embedded member 120 and the supporting member 100, so that the components after bonding become symmetrical with respect to the bonding surface, which is favorable. A good joint surface is formed. Note that any bonding material may be used as long as it can bond the electrode-embedded member 120 and the support member 100 together. For example, it may be a mixed powder paste containing at least Y ₂ O ₃ powder in AlN powder, which is the same main component as the electrode embedding member 120 and the supporting member 100 . Also, the paste contains 90 wt % to 95 wt % AlN, contains 5 wt % or more of Y ₂ O ₃ , and optionally contains CaO, MgO, ZrO ₂ , and SiO ₂ in order to adjust the temperature of the molten liquid during bonding. may

Next, a bonding method that does not use the bonding material 150 will be described. The support member 100 is arranged at the joint 124 where the support member 100 on the lower surface facing the mounting surface 122 of the electrode-embedded member 120 is joined. The joint portion 124 and the end face of the support member 100 on the joint portion side are preferably ground to a surface roughness Ra of 0.1 μm or less. Next, the main surface (mounting surface 122) is heated while being pressurized in the vertical direction. The pressure to be applied is preferably 1 MPa or more. Moreover, the heating temperature is preferably 1600° C. or higher and 2000° C. or lower. The heating time is preferably 0.5 hours or more and 6 hours or less. The heating atmosphere is, for example, a nitrogen or inert gas atmosphere, but may be an atmosphere such as a vacuum. Thereby, the electrode-embedded member 120 and the support member 100 can be joined.

At this time, regarding the composition of the joint portion 124 of the electrode-embedded member 120 to be joined and the support member 100, it is preferable that the _three components of Y ₂ O are substantially the same in both. When they are substantially the same, the oxide components formed on the surfaces of the AlN particles contained in the joint portion 124 of the electrode-embedded member 120 and the support member 100 are symmetrically formed on the joint portion 124 of the support member 100 and the electrode-embedded member 120, respectively. By diffusing, the components after bonding become symmetrical with respect to the bonding surface, and a good bonding surface is formed.

Then, necessary terminal holes 142 are provided in the board holding member 200 . The terminal hole 142 may be drilled before or after joining with the support member 100 . Then, the terminal 140 is connected to the terminal hole 142 with brazing material or the like. Ni or the like can be used for the terminal 140 . Also, Au brazing or the like can be used as the brazing material.

By doing so, the substrate holding member can be manufactured which can adjust the heat insulating properties of the supporting member (heat flow flowing through the supporting member) and can adjust the symmetry of the temperature distribution on the mounting surface of the substrate holding member. can do.

[Examples and Comparative Examples]
(Example 1)
(Production of support member)
A first ceramic raw material powder containing AlN to which 5 wt % Y ₂ O ₃ was added as a main component was prepared. Using this, a ring-shaped first ceramic molded body having an outer diameter of Φ90 mm, an inner diameter of Φ50 mm, a thickness of 25 mm, a counter bore of Φ65 mm from one side, and a depth of 15 mm was formed by CIP molding. The bulk density was 2.29 g/cm ³ when the molding pressure was adjusted to 1000 kgf/cm ² , and the shrinkage rate when fired was 17.31%.

Also, a second ceramic raw material powder containing AlN as a main component without adding a sintering aid was prepared. Using this, a second ceramic compact having a cylinder outer diameter of Φ65 mm, an inner diameter of Φ50 mm, a height of 150 mm, a lower flange outer diameter of Φ90 mm, an inner diameter of 50 mm, and a thickness of 25 mm was formed by CIP. The bulk density was 2.32 g/cm ³ when the molding pressure was adjusted to 1400 kgf/cm ² , and the shrinkage rate when fired was 17.01%.

A support member precursor was produced by combining the first ceramic molded body and the second ceramic molded body. This was sintered under atmospheric pressure in an _N2 atmosphere, at a maximum temperature of 1900° C., and for a maximum temperature retention time of 2 hours. Then, after processing the fired support member into a predetermined shape, the end surface on the enlarged diameter portion side was processed with Ra of 0.4 μm. The diameter of the enlarged diameter portion at this time was Φ70 mm.

(Preparation of electrode embedded member)
A first ceramic raw material powder containing AlN to which 5 wt % Y ₂ O ₃ was added as a main component was prepared. That is, it is the same raw material powder as the ceramic raw material powder that formed the enlarged diameter portion of the support member in Example 1. Using this, a certain amount of raw material powder is put into a carbon mold with an inner diameter of Φ 320 mm, temporarily pressed, and after leveling, Mo mesh (wire diameter 0.1 mm, mesh size # 50, plain weave) is cut into a predetermined shape. was placed. Further, a W pellet (Φ8 mm×0.2 mm) serving as a connecting member was placed at the position of the power supply terminal, raw material powder was added, and the electrode was embedded with the raw material powder. After setting a carbon punch, hot press firing was performed at a pressure of 1800° C. or higher and 1 MPa or higher. After firing, a boss having a diameter of 310 mm, a thickness of 25 mm, and an outer diameter of 70 mm, an inner diameter of 50 mm, and a height of 2 mm was provided on one surface. The end face of the boss was processed with Ra of 0.4 μm.

(bonding)
AlN bonding material paste containing 10 wt% Y ₂ O ₃ was applied to the bonding area to a thickness of 15 μm, a supporting member was placed, and a force of 5 kPa was applied in a direction perpendicular to the mounting surface while heating at 1700° C. for 1 hour. joined together. After that, hole processing was performed until the W pellet was exposed at the position of the power supply terminal, and a Ni rod having a diameter of 5 mm and a length of 250 mm was brazed with Au brazing at 1000° C. in vacuum. Finally, as a finishing process, the external shape was processed into a predetermined shape. Thus, the substrate holding member of Example 1 was produced.

(Example 2)
(Production of support member)
In the supporting member of Example 2, the expanded diameter portion was made of the second ceramic raw material powder, and the cylindrical portion was made of the first ceramic raw material powder. Other conditions were the same as those of the support member of Example 1.

(Preparation of electrode embedded member)
A first ceramic raw material powder containing AlN to which 5 wt % Y ₂ O ₃ was added as a main component was prepared. That is, it is the same raw material powder as the ceramic raw material powder forming the cylindrical portion of the supporting member in Example 2. Using this, a third ceramic compact having a diameter of Φ320 mm and a thickness of 15 mm and a third ceramic compact having a diameter of Φ320 mm and a thickness of 20 mm were produced by CIP molding. Also, a second ceramic raw material powder containing AlN as a main component without adding a sintering aid was prepared. That is, it is the same raw material powder as the ceramic raw material powder that formed the enlarged diameter portion of the supporting member in Example 2. Using this, a fourth ceramic compact having a diameter of Φ90 mm and a thickness of 5 mm was formed by CIP molding. This is a compact that becomes a boss after firing.

The same electrode as in Example 1 was sandwiched between the third ceramic compacts, the fourth ceramic compact was arranged on the lower surface side, and hot-press fired at a pressure of 1800° C. or higher and 1 MPa or higher. After firing, a boss having a diameter of 310 mm, a thickness of 25 mm, and an outer diameter of 70 mm, an inner diameter of 50 mm, and a height of 2 mm was provided on one surface. The end face of the boss was processed with Ra of 0.4 μm.

(bonding)
The bonding was performed using the same bonding material as in Example 1. Finally, as a finishing process, the external shape was processed into a predetermined shape. Thus, the substrate holding member of Example 2 was produced.

(Example 3)
(Production of support member)
A first ceramic raw powder mainly composed of AlN to which 5 wt % Y ₂ O ₃ was added and a second ceramic raw powder mainly composed of AlN to which no sintering aid was added were prepared. That is, it is the same raw material powder as the two kinds of ceramic raw material powders forming the support member of Example 1.

The mold was filled with the first ceramic raw material powder and temporarily pressed. After that, the second ceramic raw powder is filled, and after temporary pressing, CIP molding is performed to obtain a ceramic molded body in which a portion made of the first ceramic raw powder and a portion made of the second ceramic raw powder are formed in two layers. made. A support member precursor was produced by machining the ceramic compact. In the supporting member precursor of Example 3, the portion from the expanded diameter portion to the middle portion of the cylindrical portion is formed from the first ceramic raw material powder, and the portion from the middle portion to the lower portion of the cylindrical portion is formed from the second ceramic raw material powder. was This was sintered under atmospheric pressure in an _N2 atmosphere, at a maximum temperature of 1900° C., and for a maximum temperature retention time of 2 hours. Then, after processing the fired support member into a predetermined shape, the end surface on the enlarged diameter portion side was processed with Ra of 0.4 μm. The diameter of the enlarged diameter portion at this time was Φ70 mm.

(Preparation of electrode embedded member)
The electrode-embedded member was the same as in Example 1. The end face of the boss was processed with Ra of 0.4 μm.

(bonding)
Diffusion bonding was performed at 1800° C. and 1 MPa without using a bonding material. Finally, as a finishing process, the external shape was processed into a predetermined shape. Thus, the substrate holding member of Example 3 was produced.

[Measurement of thermal conductivity]
Using the first ceramic raw material powder and the second ceramic raw material powder, a test piece of φ10 mm thickness 2 mmt was cut out from the first region and the second region of the member manufactured in the same manner as the supporting member of Example 1, and laser Thermal conductivity was measured by flash method. As a result, the first area was 160 W/mK and the second area was 70 W/mK.

[Repeated heating test]
The substrate holding member of the example was repeatedly heated from 100° C. to 600° C. 20 times. After that, when the He leak from the joint surface was measured, it was kept small at 1×10 ⁻¹⁰ Pa·m ³ /s or less. In most cases, when there is poor bonding, the failure occurs less than this number of times. Therefore, it was confirmed that the substrate holding member of the example is a highly reliable substrate holding member that does not have poor bonding.

[Symmetry of Temperature Distribution on Placement Surface]
A substrate was placed on the substrate holding member of the example, and the surface temperature of the central portion of the substrate was adjusted to 400°C. At this time, in Example 1, a gentle concentric temperature gradient of 4.5° C. could be generated from the center of the substrate toward the outer periphery. Further, in Example 2, a temperature gradient of 1.7° C. similar to that in Example 1 could be generated, and in Example 3, a temperature gradient of 3.3° C. could be generated. As a result, it was confirmed that the substrate holding member of the example can adjust the symmetry of the temperature distribution of the substrate.

From the above, it was confirmed that the supporting member and the substrate holding member of the present invention do not cause any problem of stress after bonding, and that the symmetry of the temperature distribution of the substrate can be adjusted by adjusting the heat insulating property of the supporting member. . Moreover, it was confirmed that the manufacturing method of the present invention can manufacture such a substrate holding member.

It goes without saying that the present invention is not limited to the above-described embodiments, but extends to various modifications and equivalents within the spirit and scope of the present invention. Also, the structure, shape, number, position, size, etc. of the constituent elements shown in each drawing are for convenience of explanation, and may be changed as appropriate.

11 First ceramic molded body 12 Second ceramic molded body 13 Third ceramic molded body 23 Third ceramic degreased body 30 Support member precursor 40 Electrode-embedded member precursor 100 Support member 101 First region 102 Second area 112 enlarged diameter portion 114 cylindrical portion 116 end portion 118 on the side facing the enlarged diameter portion boss 120 electrode embedding member 122 mounting surface 124 joint portion 130 electrode 140 terminal 142 terminal hole 150 joint material 200 substrate holding member

Claims (8)

A support member,
The support member is formed in a cylindrical shape from a ceramic sintered body containing AlN as a main component,
The support member is composed of a first region and a second region,
The thermal conductivity of the first region at 25° C. is 100 W/mK or more,
The supporting member, wherein the second region has a thermal conductivity of 80 W/mK or less at 25°C. Y ₂ O ₃ conversion concentration of the Y component contained in the first region is 0.4 wt% or more and 5 wt% or less,
2. The support member according to claim 1, wherein the Y component contained in the _second region has a _Y2O3 converted concentration of 0.1 wt % or less. 3. The support member according to claim 1, wherein one end of said support member is configured by said first region, and the other end of said support member is configured by said second region. support member. A substrate holding member,
a plate-shaped electrode-embedded member made of a ceramic sintered body containing AlN as a main component, in which an electrode is embedded;
A support made of a ceramic sintered body containing AlN as a main component, having an enlarged diameter portion provided at the end on the side of the electrode-embedded member and a cylindrical portion having a smaller diameter than the enlarged diameter portion, and supporting the electrode-embedded member. comprising a member and
The substrate holding member, wherein the heat conductivity of the end portion of the enlarged diameter portion is different from the heat conductivity of the end portion facing the enlarged diameter portion. Y ₂ O ₃ conversion concentration of the Y component contained in the end portion of the enlarged diameter portion is 0.4 wt% or more and 5 wt% or less,
5. The substrate holding member according to claim ₄ , wherein the Y component contained in the end portion facing the enlarged diameter portion has a _Y2O3 converted concentration of 0.1 wt % or less. The Y ₂ O ₃ converted concentration of the Y component contained in the electrode embedded member is substantially the same as the Y ₂ O ₃ converted concentration of the Y component contained in the end portion of the expanded diameter portion of the support member. The substrate holding member according to claim 5. A method for manufacturing a substrate holding member, comprising:
a step of forming one or a plurality of first ceramic compacts from a first ceramic raw material powder containing AlN as a main component and having an adjusted amount of a sintering aid;
1 from a second ceramic raw powder containing AlN as a main component and adjusted to have a sintering aid added in an amount less than the sintering aid added in the first ceramic raw powder or to which no sintering aid is added or a step of forming a plurality of second ceramic molded bodies;
combining the one or more first ceramic molded bodies and the one or more second ceramic molded bodies to form a support member precursor;
a step of baking the supporting member precursor to produce a supporting member;
A step of forming a plurality of third ceramic compacts from a third ceramic raw material powder containing AlN as a main component and having a predetermined amount of a sintering aid added thereto;
a step of degreasing the plurality of third ceramic molded bodies at a predetermined temperature or higher for a predetermined time or longer to produce a plurality of third ceramic degreased bodies;
An electrode is prepared, and the electrode and the plurality of third ceramic degreased bodies are combined to form an electrode-embedded member precursor having a mounting surface on one main surface, formed in a flat plate shape, and having the electrode embedded therein. forming;
a step of uniaxially pressurizing and sintering the electrode-embedded member precursor in a direction perpendicular to the main surface to produce an electrode-embedded member;
The supporting member is placed at the joint where the supporting member is joined on the lower surface of the electrode-embedded member facing the mounting surface, and the main surface is pressurized and heated in a vertical direction, or a joining material is prepared. The bonding material is applied to at least one of a bonding portion of the lower surface of the electrode-embedded member opposite to the mounting surface where the supporting member is bonded or an end surface of the supporting member to be bonded, and the bonding material is applied to the bonding portion. and heating while applying pressure in a direction perpendicular to the main surface to join the electrode-embedded member and the support member;
The first region of the support member where the first ceramic compact is fired has a thermal conductivity of 100 W/mK or more at 25° C.,
A method for manufacturing a substrate holding member, wherein the second region of the supporting member where the second ceramic compact is fired has a thermal conductivity of 80 W/mK or less at 25°C. A method for manufacturing a substrate holding member, comprising:
a first ceramic raw powder containing AlN as a main component and having an adjusted amount of a sintering aid; and a step of preparing a second ceramic raw material powder adjusted to be less than the additive amount of the agent or not added with the sintering aid;
One of the first ceramics raw powder and the second ceramics raw powder is put into a mold for temporary molding, and the other is further put into the mold for temporary molding, which is repeated one or more times to obtain a supporting member precursor. forming;
a step of baking the supporting member precursor to produce a supporting member;
A step of forming a plurality of third ceramic compacts from a third ceramic raw material powder containing AlN as a main component and having a predetermined amount of a sintering aid added thereto;
a step of degreasing the plurality of third ceramic molded bodies at a predetermined temperature or higher for a predetermined time or longer to produce a plurality of third ceramic degreased bodies;
An electrode is prepared, and the electrode and the plurality of third ceramic degreased bodies are combined to form an electrode-embedded member precursor having a mounting surface on one main surface, formed in a flat plate shape, and having the electrode embedded therein. forming;
a step of uniaxially pressurizing and sintering the electrode-embedded member precursor in a direction perpendicular to the main surface to produce an electrode-embedded member;
The supporting member is placed at the joint where the supporting member is joined on the lower surface of the electrode-embedded member facing the mounting surface, and the main surface is pressurized and heated in a vertical direction, or a joining material is prepared. The bonding material is applied to at least one of a bonding portion of the lower surface of the electrode-embedded member opposite to the mounting surface where the supporting member is bonded or an end surface of the supporting member to be bonded, and the bonding material is applied to the bonding portion. and heating while applying pressure in a direction perpendicular to the main surface to join the electrode-embedded member and the support member;
The first region of the support member where the first ceramic compact is fired has a thermal conductivity at 25° C. of 100 W/mK or more,
A method for manufacturing a substrate holding member, wherein the second region of the supporting member, in which the second ceramic compact is fired, has a thermal conductivity of 80 W/mK or less at 25°C.

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