JP2022136624A - Plasma treatment system and attachment method of consumption member - Google Patents

Abstract

To reduce a time required for attaching a plurality of consumption members to a substrate support base.SOLUTION: A plasma treatment system includes: a substrate support base on which a substrate and a consumption member are mounted; and a treatment container in which the substrate support base is provided in an inner part so as to enable a reduction of a pressure, and comprises: a plasma treatment device that performs a plasma treatment to the substrate on the substrate support base; a conveyance device that carries out/in the substrate to the treatment container; and a control device. The control device controls so that an integrated member integrated so that the plurality of consumption members is bonded is conveyed to the treatment container by the conveyance device, and the integrated member is mounted on the substrate support base from the conveyance device.SELECTED DRAWING: Figure 4

Description

The present disclosure relates to plasma processing systems and methods of installing consumables.

Japanese Patent Laid-Open No. 2004-100001 describes a plasma processing apparatus that is used in a plasma processing apparatus capable of performing plasma processing on a substrate mounted on a mounting table provided inside a processing chamber, and the substrate is mounted on the mounting table so as to surround the circumference of the substrate. A focus ring replacement method is disclosed for replacing a focus ring that is attached to a lens. This focus ring replacement method comprises a carrying-out step of carrying out the focus ring from the processing chamber by a carrying device for carrying the focus ring without opening the processing chamber to the atmosphere; and a carrying-in step of carrying the focus ring into the room and mounting it on the mounting table.

Japanese Patent Application Laid-Open No. 2018-10992

The technique according to the present disclosure shortens the time required to attach a plurality of consumable members to the substrate support.

One aspect of the present disclosure includes a substrate support on which a substrate and a consumable member are placed, and a processing container in which the substrate support is provided and which is configured to be able to be decompressed. a plasma processing apparatus for performing plasma processing on the substrate, a transfer apparatus for loading and unloading the substrate from the processing container, and a control apparatus, wherein the control apparatus is configured to integrate a plurality of consumable members into a unit. The integrated member is transported into the processing container by the transport device, and the integrated member is placed on the substrate support table from the transport device.

According to the present disclosure, it is possible to shorten the time required to attach a plurality of consumable members to the substrate support.

1 is a plan view showing an outline of the configuration of a plasma processing system according to this embodiment; FIG. It is a longitudinal cross-sectional view showing the outline of a structure of a processing module. FIG. 3 is a partially enlarged view of FIG. 2; [0014] FIG. 4 illustrates conditions within a plasma processing chamber during an edge ring and cover ring attachment process; FIG. 10 is a partial cross-sectional view showing another example of the integral ring; FIG. 10 is a partial cross-sectional view showing another example of the integral ring; FIG. 10 is a partial cross-sectional view showing another example of the integral ring; FIG. 10 is a diagram for explaining an example of a method of releasing the joint between the edge ring and the covering (separating the edge ring and the covering); FIG. 10 is a diagram for explaining another example of a method of releasing the joint between the edge ring and the covering (separating the edge ring and the covering);

2. Description of the Related Art In the manufacturing process of semiconductor devices and the like, plasma processing such as etching is performed on substrates such as semiconductor wafers (hereinafter referred to as "wafers") using plasma. Plasma processing is performed with a substrate placed on a substrate support table in a depressurized processing container.

In addition to the substrate, consumables that need to be replaced periodically are placed on the substrate support table. Consumables include, for example, edge rings that are positioned adjacent to the substrate on the substrate support. The edge ring is etched by exposure to plasma and must be replaced.

By the way, in addition to the edge ring, a cover ring arranged to cover the outer surface of the edge ring may be placed on the substrate support. Since this cover ring is also etched by exposure to plasma, there is a need to replace it periodically, that is, to treat it as a consumable member.

If an operator separately attaches the edge ring and the cover ring to the substrate support, relative positioning of the edge ring and the cover ring is also required. This alignment takes a long time.

Accordingly, the technique of the present disclosure reduces the time required to attach multiple consumables, such as edge rings and cover rings, to the substrate support.

A plasma processing system and a consumable member mounting method according to the present embodiment will be described below with reference to the drawings. In the present specification and drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, thereby omitting redundant description.

<Plasma processing system>
FIG. 1 is a plan view showing an outline of the configuration of the plasma processing system according to this embodiment.
In the plasma processing system 1 of FIG. 1, plasma processing such as etching is performed on a wafer W as a substrate using plasma.

As shown in FIG. 1, the plasma processing system 1 has an atmosphere section 10 and a decompression section 11 , and the atmosphere section 10 and the decompression section 11 are integrally connected via load lock modules 20 and 21 . The atmospheric part 10 includes an atmospheric module that performs desired processing on the wafer W under atmospheric pressure. The decompression unit 11 includes a processing module 60 that performs desired processing on the wafer W under a decompressed atmosphere (vacuum atmosphere).

The load lock modules 20 and 21 are provided to connect the loader module 30 included in the atmosphere section 10 and the transfer module 50 included in the pressure reduction section 11 via gate valves (not shown). The load lock modules 20, 21 are configured to hold the wafer W temporarily. Further, the load lock modules 20 and 21 are configured so that the inside can be switched between an atmospheric pressure atmosphere and a reduced pressure atmosphere.

The atmospheric part 10 has a loader module 30 having a carrier device 40, which will be described later, and a load port 32 on which a FOUP 31 is placed. The FOUP 31 is capable of storing a plurality of wafers W. FIG. An orienter module (not shown) for adjusting the horizontal direction of the wafer W, a buffer module (not shown) for temporarily storing a plurality of wafers W, and the like are connected to the loader module 30. good.

The loader module 30 has a rectangular housing, and the inside of the housing is maintained at atmospheric pressure. A plurality of, for example, five load ports 32 are arranged side by side on one side surface that constitutes the long side of the housing of the loader module 30 . Load-lock modules 20 and 21 are arranged side by side on the other side surface constituting the long side of the housing of the loader module 30 .

Inside the housing of the loader module 30, a transfer device 40 configured to transfer the wafer W is provided. The transfer device 40 has a transfer arm 41 that supports the wafer W during transfer, a turntable 42 that rotatably supports the transfer arm 41, and a base 43 on which the turntable 42 is mounted. A guide rail 44 extending in the longitudinal direction of the loader module 30 is provided inside the loader module 30 . The base 43 is provided on guide rails 44 , and the conveying device 40 is configured to be movable along the guide rails 44 .

The decompression unit 11 includes a transfer module 50 for transferring a wafer W and an integral ring R (to be described later), a processing module 60 as a plasma processing apparatus for performing desired plasma processing on the wafer W transferred from the transfer module 50, and an integral ring R and a storage module 61 as a storage unit for storing the . The interiors of the transfer module 50 and the processing module 60 (specifically, the interiors of the reduced-pressure transfer chamber 51 and the plasma processing chamber 100, which will be described later) are each maintained in a reduced-pressure atmosphere, and the interior of the storage module 61 is also maintained in a reduced-pressure atmosphere. For one transfer module 50, a plurality of processing modules 60, for example six, and a plurality of storage modules 61, for example two, are provided. The number and arrangement of the processing modules 60 are not limited to the present embodiment, and can be set arbitrarily. . Also, the number and arrangement of storage modules 61 are not limited to those of this embodiment, and can be set arbitrarily. For example, at least one storage module is provided.

The transfer module 50 includes a reduced-pressure transfer chamber 51 having a housing that is polygonal in plan view (rectangular in plan view in the illustrated example). The transfer module 50 transfers the wafer W loaded into the load lock module 20 to one processing module 60, and transfers the wafer W subjected to the desired plasma processing in the processing module 60 through the load lock module 21. It is carried out to the atmospheric part 10 . Also, the transfer module 50 transfers the integral ring R in the storage module 61 to one processing module 60 . Further, the transfer module 50 may transfer the integrated ring R in the processing module 60 to the storage module 61 .

The processing module 60 performs plasma processing such as etching on the wafer W, for example. The processing module 60 is also connected to the transfer module 50 via a gate valve 62 . A specific configuration of the processing module 60 will be described later.

The housing module 61 houses the integral ring R. The integrated ring R is an example of an integrated member in which an edge ring E, which is an example of a consumable member, and a cover ring C, which is also an example of a consumable member, are integrated by joining. A specific configuration of the integral ring R will be described later.
Also, the storage module 61 is connected to the transfer module 50 via a gate valve 63 .

Inside the reduced-pressure transfer chamber 51 of the transfer module 50, a transfer device 70 configured to transfer the wafer W and the integrated ring R is provided. The carrier device 70 includes a carrier arm 71 that supports the wafer W and the integral ring R during the transfer, a turntable 72 that rotatably supports the carrier arm 71, and a base on which the turntable 72 is mounted. a platform 73; A guide rail 74 extending in the longitudinal direction of the transfer module 50 is provided inside the reduced-pressure transfer chamber 51 of the transfer module 50 . The base 73 is provided on guide rails 74 , and the transport device 70 is configured to be movable along the guide rails 74 .

In the transfer module 50 , the transfer arm 71 receives the wafer W held in the load lock module 20 and carries it into the processing module 60 . Further, the transfer arm 71 receives the wafer W held in the processing module 60 and unloads it to the load lock module 21 .

Further, in the transfer module 50 , the transport arm 71 receives the integrated ring R in the storage module 61 and carries it into the processing module 60 . Further, there is a case where the integrated ring R held in the processing module 60 is received by the transfer arm 71 and carried out to the storage module 61 .

Furthermore, the plasma processing system 1 has a controller 80 . In one embodiment, controller 80 processes computer-executable instructions that cause plasma processing system 1 to perform various operations described in this disclosure. Controller 80 may be configured to control each of the other elements of plasma processing system 1 to perform the various processes described herein. In one embodiment, some or all of controller 80 may be included in other elements of plasma processing system 1 . Controller 80 may include computer 90, for example. The computer 90 may include, for example, a processing unit (CPU: Central Processing Unit) 91 , a storage unit 92 , and a communication interface 93 . The processing unit 91 can be configured to perform various control operations based on programs stored in the storage unit 92 . The storage unit 92 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 93 may communicate with other elements of the plasma processing system 1 via a communication line such as a LAN (Local Area Network).

<Wafer Processing in Plasma Processing System 1>
Next, wafer processing performed using the plasma processing system 1 configured as described above will be described.

First, a wafer W is taken out from a desired FOUP 31 and loaded into the load lock module 20 by the transfer device 40 . After that, the inside of the load lock module 20 is sealed and the pressure is reduced. After that, the inside of the load lock module 20 and the inside of the transfer module 50 are communicated.

Next, the wafer W is held by the transfer device 70 and transferred from the load lock module 20 to the transfer module 50 .

Next, the gate valve 62 is opened, and the wafer W is carried into the desired processing module 60 by the carrier device 70 . After that, the gate valve 62 is closed and the desired processing is performed on the wafer W in the processing module 60 . The processing performed on the wafer W in this processing module 60 will be described later.

Next, the gate valve 62 is opened, and the wafer W is unloaded from the processing module 60 by the carrier device 70 . After that, the gate valve 62 is closed.

Next, the wafer W is carried into the load lock module 21 by the transfer device 70 . When the wafer W is loaded into the load lock module 21, the inside of the load lock module 21 is sealed and opened to the atmosphere. After that, the inside of the load lock module 21 and the inside of the loader module 30 are communicated with each other.

Next, the wafer W is held by the transfer device 40 and returned from the load lock module 21 via the loader module 30 to the desired FOUP 31 to be accommodated therein. A series of wafer processing in the plasma processing system 1 is now completed.

<Processing module 60>
Next, the processing module 60 will be described with reference to FIGS. 2 and 3. FIG. FIG. 2 is a vertical cross-sectional view showing an outline of the configuration of the processing module 60. As shown in FIG. 3 is a partially enlarged view of FIG. 2. FIG.

As shown in FIG. 2 , the processing module 60 includes a plasma processing chamber 100 as a processing container, a gas supply section 130 , an RF (Radio Frequency) power supply section 140 and an exhaust system 150 . Further, the processing module 60 includes a wafer support 101 and an upper electrode 102 as substrate supports.

The wafer support table 101 is arranged in the lower region of the plasma processing space 100s in the plasma processing chamber 100 configured to be depressurized. A top electrode 102 is positioned above the wafer support 101 and may serve as part of the ceiling of the plasma processing chamber 100 .

The wafer support 101 is configured to support the wafer W in the plasma processing space 100s. In one embodiment, wafer support 101 includes bottom electrode 103 , electrostatic chuck 104 , support 105 , insulator 106 , lifter 107 and lifter 108 .

The lower electrode 103 is made of a conductive material such as aluminum. In one embodiment, a flow path 109 for a temperature control fluid is formed inside the lower electrode 103 . A temperature control fluid is supplied to the flow path 109 from a chiller unit (not shown) provided outside the plasma processing chamber 100 . The temperature control fluid supplied to the flow path 109 is returned to the chiller unit. By circulating, for example, a low-temperature brine as a temperature control fluid in the channel 109, for example, the wafer support table 101, the wafer W placed on the wafer support table 101, the edge ring E or the cover ring C are heated to a predetermined temperature. Allow to cool to temperature. By circulating, for example, a high temperature brine as a temperature control fluid in the channel 109, for example, the wafer support 101, the wafer W placed on the wafer support 101, the edge ring E or the cover ring C are heated to a predetermined temperature. Can be heated to temperature.
When the wafer support 101 is provided with a temperature control mechanism, the form of the temperature control mechanism is not limited to the flow path 109 described above, and other forms such as a resistance heating heater may be used. Further, the member on which the temperature control mechanism is arranged in the wafer support table 101 is not limited to the lower electrode 103, and may be another member.

An electrostatic chuck 104 is provided on the lower electrode 103 . A wafer W is placed on the electrostatic chuck 104 . In one embodiment, the electrostatic chuck 104 also supports the edge ring E when the integral ring R is placed on the wafer support 101 . The electrostatic chuck 104 may attract and hold both the wafer W and the edge ring E by electrostatic force. In one embodiment, the upper surface of the central portion of the electrostatic chuck 104 is higher than the upper surface of the peripheral portion. The edge ring E is supported by the upper surface 104b of the portion.

The edge ring E is a member arranged to surround the wafer W mounted on the electrostatic chuck 104 (specifically, mounted on the upper surface 104a of the central portion of the electrostatic chuck 104). The edge ring E is formed in an annular shape, more specifically, an annular shape in plan view.
A cover ring C, which forms an integral ring R together with the edge ring E, is a member that covers the outer surface of the edge ring E. As shown in FIG. The cover ring C is formed in an annular shape, more specifically, an annular shape in plan view.

Materials for the edge ring E and the cover ring C are Si, SiO ₂ and SiC, for example. The material of the edge ring E and the material of the cover ring C may be the same or different.

The edge ring E and the cover ring C are attached to the wafer support 101 in a state in which the edge ring E and the cover ring C are joined together to form an integrated ring R as shown in FIG. In other words, the integral ring R is formed by integrating the edge ring E and the cover ring C through the joint portion B. As shown in FIG. More specifically, the edge ring E and the cover ring C are aligned with each other and joined together to form an integral ring R. As shown in FIG.

The bonding between the edge ring E and the cover ring C is, for example, any one of adhesion using an adhesive, adhesion using an adhesive, diffusion bonding, normal temperature bonding, anodic bonding, fusion welding, pressure welding, and brazing. Alternatively, it is performed by a combination of multiple methods.

In addition, in the illustrated example, the cover ring C is formed so as not to overlap the edge ring E in plan view. Specifically, the inner diameter of the cover ring C is larger than the outer diameter of the edge ring E. The inner peripheral side surface of the cover ring C and the outer peripheral side surface of the edge ring E are joined.

In one embodiment, removal of the edge ring E and cover ring C from the wafer support 101 is also performed in the integral ring R state.

At the center of the electrostatic chuck 104, as shown in FIG. 2, an electrode 110 is provided for holding the wafer W by electrostatic attraction. An electrode 111 for holding the edge ring E by electrostatic adsorption may be provided on the peripheral portion of the electrostatic chuck 104 . The electrostatic chuck 104 has a configuration in which electrodes 110 and 111 are sandwiched between insulating materials made of an insulating material, for example.

A DC voltage is applied to the electrode 110 from a DC power supply (not shown). The wafer W is attracted and held on the upper surface 104 a of the electrostatic chuck 104 at the central portion by the electrostatic force generated thereby. Similarly, a DC voltage is applied to the electrode 111 from a DC power supply (not shown). The edge ring E is attracted and held on the upper surface 104b of the peripheral portion of the electrostatic chuck 104 by the electrostatic force generated thereby. Electrode 111 is, for example, of a bipolar type including a pair of electrodes 111a, 111b.
In this embodiment, the central portion of the electrostatic chuck 104 where the electrode 110 is provided and the peripheral portion where the electrode 111 is provided are integrated, but the central portion and the peripheral portion may be separate bodies. .
Further, in the present embodiment, the electrode 111 for attracting and holding the edge ring E is of the bipolar type, but may be of the unipolar type.

Further, the central portion of the electrostatic chuck 104 is, for example, formed to have a smaller diameter than the diameter of the wafer W, and when the wafer W is placed on the upper surface 104a of the central portion of the electrostatic chuck 104, the wafer W A peripheral portion protrudes from the central portion of the electrostatic chuck 104 .
The edge ring E is formed with a step at its upper portion, and the upper surface of the outer peripheral portion is formed higher than the upper surface of the inner peripheral portion. The inner peripheral portion of the edge ring E is formed so as to go under the peripheral portion of the wafer W projecting from the central portion of the electrostatic chuck 104 . That is, the edge ring E has an inner diameter smaller than the outer diameter of the wafer W. As shown in FIG.

Although not shown, the upper surface 104a at the center of the electrostatic chuck 104 is provided with a gas supply hole for supplying heat transfer gas to the back surface of the wafer W placed on the upper surface 104a. A heat transfer gas is supplied from a gas supply section (not shown) through the gas supply holes. A gas supply may include one or more gas sources and one or more pressure controllers. In one embodiment, the gas supply is configured to supply heat transfer gas, for example from a gas source, to the heat transfer gas supply holes via a pressure controller.

The support 105 is a member made of quartz or the like and formed in a ring shape in a plan view, and supports the lower electrode 103 . In one embodiment, support 105 supports cover ring C when integral ring R is placed on wafer support 101 .

A central upper surface 104a of the electrostatic chuck 104 serves as a substrate mounting surface on which the wafer W is mounted. The upper surface 104b of the peripheral portion of the electrostatic chuck 104 and the upper surface 105a of the support 105 are member mounting surfaces on which an integrated ring R formed by integrating an edge ring E and a cover ring C, which are expendable members, is mounted. becomes.

The insulator 106 is a cylindrical member made of ceramic or the like, and supports the support 105 . The insulator 106 is formed, for example, to have an outer diameter equal to that of the support 105 and supports the periphery of the support 105 .

The lifter 107 is a member that moves up and down with respect to the central upper surface 104a of the electrostatic chuck 104, and is formed in a columnar shape using ceramic as a material, for example. The lifter 107 can support the wafer W with its upper end protruding from the upper surface 104a when raised. The lifter 107 can transfer the wafer W between the wafer support table 101 and the carrier arm 71 of the carrier device 70 .
Three or more lifters 107 are provided at intervals, and are provided so as to extend in the vertical direction.

The lifter 107 is moved up and down by a lifting mechanism 112 . The elevating mechanism 112 has, for example, a support member 113 that supports the plurality of lifters 107 and a driving unit 114 that generates a driving force for raising and lowering the support member 113 and raises and lowers the plurality of lifters 107 . The drive unit 114 has, for example, a motor (not shown) as a drive source that generates the drive force.

The lifter 107 is inserted through an insertion hole 115 whose upper end is open to the upper surface 104 a of the electrostatic chuck 104 at the center. The insertion hole 115 is formed, for example, so as to extend downward from the upper surface 104 a of the electrostatic chuck 104 at the center to the bottom surface of the lower electrode 103 .

The lifter 108 is an elevating member that moves up and down with respect to the above-described member mounting surface, and is formed in a columnar shape from alumina, quartz, SUS, or the like, for example. The lifter 108 is capable of supporting the integrated ring R with its upper end protruding from the member mounting surface when lifted. With this lifter 108 , the integrated ring R can be transferred between the wafer support table 101 and the transfer arm 71 of the transfer device 70 .
Three or more lifters 108 are provided at intervals in the circumferential direction of the electrostatic chuck 104 and extend vertically.

The lifter 108 is moved up and down by a lifting mechanism 116 . The elevating mechanism 116 has, for example, a support member 117 that supports the plurality of lifters 108 and a drive unit 118 that generates a driving force for raising and lowering the support member 117 and raises and lowers the plurality of lifters 107 . The drive unit 118 has, for example, a motor (not shown) as a drive source that generates the drive force.

Further, the lifter 108 is provided so as to engage with either the edge ring E or the cover ring C of the integral ring R and not engage with the other. That is, the lifter 108 is not provided with both the lifter that engages with the edge ring E and the lifter that engages with the cover ring C, but only one of them is provided. In this example, only the lifter 108 that engages with the cover ring C is provided. In this example, the lifter 108 is inserted through an insertion hole 119 whose upper end is open to the upper surface 105a of the support 105 that supports the cover ring C. As shown in FIG. The insertion hole 119 is formed, for example, so as to pass through the support 105 .

The upper electrode 102 also functions as a showerhead that supplies one or more processing gases from the gas supply section 130 to the plasma processing space 100s. In one embodiment, the top electrode 102 has a gas inlet 102a, a gas diffusion chamber 102b, and multiple gas outlets 102c. Gas inlet 102a is, for example, in fluid communication with gas supply 130 and gas diffusion chamber 102b. A plurality of gas outlets 102c are in fluid communication with the gas diffusion chamber 102b and the plasma processing space 100s. In one embodiment, the upper electrode 102 is configured to supply one or more process gases from a gas inlet 102a to the plasma processing space 100s via a gas diffusion chamber 102b and a plurality of gas outlets 102c.

Gas supply 130 may include one or more gas sources 131 and one or more flow controllers 132 . In one embodiment, gas supply 130 is configured, for example, to supply one or more process gases from respective gas sources 131 through respective flow controllers 132 to gas inlets 102a. be done. Each flow controller 132 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, gas supply 130 may include one or more flow modulation devices that modulate or pulse the flow of one or more process gases.

RF power supply 140 provides RF power, eg, one or more RF signals, to one or more electrodes, such as bottom electrode 103, top electrode 102, or both bottom electrode 103 and top electrode 102. configured to Thereby, plasma is generated from one or more processing gases supplied to the plasma processing space 100s. Accordingly, RF power supply 140 may function as at least part of a plasma generator configured to generate a plasma from one or more process gases in a plasma processing chamber. The RF power supply 140 includes, for example, two RF generators 141a, 141b and two matching circuits 142a, 142b. In one embodiment, RF power supply 140 is configured to supply a first RF signal from first RF generator 141a to bottom electrode 103 through first matching circuit 142a. For example, the first RF signal may have a frequency within the range of 27MHz-100MHz.

Also, in one embodiment, the RF power supply 140 is configured to supply a second RF signal from the second RF generator 141b to the bottom electrode 103 through the second matching circuit 142b. For example, the second RF signal may have a frequency within the range of 400 kHz to 13.56 MHz. Alternatively, a DC (Direct Current) pulse generator may be used instead of the second RF generator 141b.

Further, although not shown, other embodiments are contemplated in the present disclosure. For example, in an alternative embodiment, RF power supply 140 provides a first RF signal from an RF generator to bottom electrode 103, a second RF signal from another RF generator to bottom electrode 103, and A third RF signal may be configured to be supplied to the lower electrode 103 from yet another RF generator. Additionally, in other alternative embodiments, a DC voltage may be applied to the top electrode 102 .

Still further, in various embodiments, the amplitude of one or more RF signals (ie, first RF signal, second RF signal, etc.) may be pulsed or modulated. Amplitude modulation may involve pulsing the RF signal amplitude between an on state and an off state, or between two or more different on states.

The exhaust system 150 may be connected to an exhaust port 100e provided at the bottom of the plasma processing chamber 100, for example. Exhaust system 150 may include a pressure valve and a vacuum pump. Vacuum pumps may include turbomolecular pumps, roughing pumps, or combinations thereof.

<Wafer Processing in Processing Module 60>
Next, an example of wafer processing performed using the processing module 60 will be described. In the processing module 60, the wafer W is subjected to processing such as etching processing.

First, the wafer W is loaded into the plasma processing chamber 100 by the carrier device 70 and placed on the electrostatic chuck 104 by raising and lowering the lifter 107 . After that, a DC voltage is applied to the electrode 110 of the electrostatic chuck 104, whereby the wafer W is electrostatically attracted to and held by the electrostatic chuck 104 by electrostatic force. After loading the wafer W, the inside of the plasma processing chamber 100 is depressurized to a predetermined degree of vacuum by the exhaust system 150 .

Next, a processing gas is supplied from the gas supply unit 130 to the plasma processing space 100 s through the upper electrode 102 . In addition, high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103, thereby exciting the processing gas and generating plasma. At this time, high-frequency power LF for attracting ions may be supplied from the RF power supply unit 140 . Then, the wafer W is subjected to plasma processing by the action of the generated plasma.

During plasma processing, a heat transfer gas such as He gas or Ar gas is passed through a heat transfer gas supply path (not shown) toward the bottom surface of the wafer W and the edge ring E attracted and held by the electrostatic chuck 104 . Gas is supplied.

When the plasma processing ends, the supply of the high-frequency power HF from the RF power supply unit 140 and the supply of the processing gas from the gas supply unit 130 are stopped. If the high-frequency power LF is being supplied during the plasma processing, the supply of the high-frequency power LF is also stopped. Next, the electrostatic chuck 104 stops holding the wafer W by attraction. Also, the supply of the heat transfer gas to the bottom surface of the wafer W may be stopped.

After that, the lifter 107 lifts the wafer W and separates the wafer W from the electrostatic chuck 104 . During this detachment, the wafer W may be subjected to static elimination processing. Then, the transfer device 70 unloads the wafer W from the plasma processing chamber 100, completing a series of wafer processing.

<Installation process>
Next, an example of processing for attaching the edge ring E and the cover ring C to the wafer support 101 in the plasma processing system 1 will be described. FIG. 4 shows the state inside the plasma processing chamber 100 during the mounting process. Note that the following processing is performed under the control of the control device 80 . In addition, in the following description, the above-described attachment processing refers to a state after the edge ring E and the cover ring C are unloaded from the wafer support table 101 of the processing module 60 to which the edge ring E and the cover ring C are attached. is started with

(Step S1: Conveyance of integrated ring R)
First, the integrated ring R stored in the storage module 61 is transported by the transport device 70 into the plasma processing chamber 100 of the processing module 60 to which the edge ring E and the cover ring C are attached.
Specifically, for example, it is as follows. That is, the integrated ring R inside the storage module 61 is held by the transfer arm 71 of the transfer device 70 . Next, the transfer arm 71 holding the integrated ring R is inserted through a loading/unloading port (not shown) into the plasma processing chamber 100 of the processing module 60 to be attached. At this time, the plasma processing chamber 100 may be decompressed. Then, as shown in FIG. 4, the integrated ring R held by the transport arm 71 is transported above the peripheral portion of the electrostatic chuck 104 and the support 105 .

(Step S2: Placement of integrated ring R)
Subsequently, the integrated ring R is placed on the wafer support table 101 from the carrier device 70 .
Specifically, for example, it is as follows. That is, the lifter 108 is lifted, and the integrated ring R is transferred from the transfer arm 71 of the transfer device 70 to the lifter 108 . Thereafter, the transfer arm 71 is extracted from the plasma processing chamber 100, that is, the transfer arm 71 is retracted. Further, the lifter 108 supporting the integrated ring R is lowered, and the integrated ring R is placed on the wafer support table 101 .

A series of attachment processes for the edge ring E and the cover ring C is now completed. No relative alignment of the edge ring E and cover ring C is required in this attachment process. This is because the edge ring E and the cover ring C are joined together and integrated.
The removal of the edge ring E and the cover ring C from the wafer support table 101 in the plasma processing system 1 is performed, for example, in the reverse order of the removal described above. For example, when the edge ring and the cover ring are integrated, the carrying-in procedure may be carried out in reverse order.

<Effects, etc.>
As described above, in this embodiment, when the edge ring E and the cover ring C are attached to the wafer support 101, both rings are integrated by bonding. Therefore, according to this embodiment, it is not necessary to perform relative alignment between the edge ring E and the cover ring C after placing them on the wafer support table 101 during the attachment. Therefore, the time required for the attachment can be shortened.
That is, in this embodiment, when attaching a plurality (types) of consumables to the wafer support 101, the plurality (types) of consumables are integrated. Therefore, according to the present embodiment, after mounting a plurality of (kinds of) consumables on the wafer support table 101, it is not necessary to perform relative alignment between different consumables. be. Therefore, the time required for the attachment can be shortened.

In addition, in this embodiment, the integrated ring R is attached to the wafer support 101 under the control of the control device 80 . Therefore, the integrated ring R can be placed and attached on the wafer support table 101 with a predetermined accuracy and good reproducibility every time.

Furthermore, in this embodiment, the edge ring E and the cover ring C are integrated by joining. Therefore, there is no relative positional deviation between the edge ring E and the cover ring C while the integrated ring R is being conveyed (including while it is being lowered by the lifter 108).
In other words, in this embodiment, a plurality (types) of consumable members are integrated by joining. Therefore, there is no relative misalignment between different consumables during transportation of an integrated product of a plurality (types) of consumables.

Also, unlike the present embodiment, when the edge ring E and the cover ring C are attached, they are separate bodies. Edge ring E and cover ring C must each be provided with a lifter. On the other hand, since one lifter 108 may be provided for a plurality of (types) of consumable members such as the edge ring E and the cover ring C, the configuration of the device can be simplified.

Further, unlike the present embodiment, when a plurality (types) of consumable members such as the edge ring E and the cover ring C are individually transferred and placed, the transfer accuracy/placement accuracy is examined and the transfer position is determined for each consumable member.・It is necessary to consider correcting the placement position. On the other hand, in the present embodiment, it is sufficient to examine the transfer accuracy/placement accuracy and the correction of the transfer position/placement position for only one member, which is an integrated product of a plurality (types) of consumables. Therefore, the above examination is easy.

As described above, the edge ring E and the cover ring C are joined by adhesion using an adhesive or the like. If the bonding is performed using an adhesive, and the type and application amount of the adhesive at that time are appropriately set, the difference in coefficient of linear expansion between the material of the edge ring E and the material of the cover ring C may cause , the relative displacement between the edge ring E and the cover ring C can be absorbed. That is, even if the above-described relative displacement occurs, the joint between the edge ring E and the cover ring C can be maintained.

<Modified example of integral ring>
5 to 7 are partial cross-sectional views showing other examples of the integral ring.
The shape of the edge ring, the cover ring, and the integrated ring formed by joining them together is not limited to the examples shown in FIG. 3 and the like.

For example, as shown in FIG. 5, the cover ring Ca may have a shape overlapping the edge ring E in plan view. In the example of FIG. 5, the cover ring Ca has a protrusion Ca1 which is formed in a circular shape in a plan view and protrudes toward the inner circumference at its lower portion. The lower surface of the peripheral portion of the edge ring E and the upper surface of the protruding portion Ca1 are joined while supporting the peripheral portion of the edge ring E. In other words, the integral ring Ra has the joint B located between the lower surface of the peripheral portion of the edge ring E and the upper surface of the protruding portion Ca1.

In addition, in the integrated ring Ra, the edge ring E covers the upper side of the joint portion B (specifically, the upper portion of the entire upper portion of the joint portion B). Therefore, in the integrated ring Ra, the area of the joint portion B exposed to the plasma processing space 100s can be made smaller than in the integrated ring R shown in FIG. 3 and the like. Therefore, it is possible to prevent the bonding between the edge ring E and the cover ring Ca from being worn out by the plasma and unintentionally breaking the bonding, and from generating particles from the bonding portion due to the plasma.

The cover ring Cb in the example of FIG. 6 also has a shape overlapping the edge ring E in a plan view. In the example of FIG. 6, the cover ring Cb has a projecting portion Cb1 formed in an annular shape in a plan view and projecting inwardly at its upper portion. The integral ring Rb is formed between the outer peripheral side surface of the edge ring E and the inner peripheral side surface of the lower portion of the cover ring Cb in a state where the lower surface of the projection Cb1 of the cover ring Cb and the upper surface of the peripheral edge portion of the edge ring E are in contact with each other. is joined. In other words, the integral ring Rb has the joint portion B positioned between the outer peripheral side surface of the edge ring E and the lower inner peripheral side surface of the cover ring Cb.

In addition, in the integrated ring Rb, the upper side of the joint portion B (specifically, the upper side of the entire upper portion of the joint portion B) is covered with the projecting portion Cb1. Therefore, in the integrated ring Rb, the area of the joint portion B exposed to the plasma processing space 100s can be reduced compared to the integrated ring R shown in FIG. 3 and the like. Furthermore, in the integral ring Rb, there is substantially no gap between the lower surface of the protrusion Cb1 of the cover ring Cb and the upper surface of the peripheral edge portion of the edge ring E. Therefore, it is possible to suppress the plasma from reaching the bonding portion B. FIG. Therefore, in the integrated ring Rb, the bonding between the edge ring E and the cover ring Cb is consumed by plasma and is unintentionally broken, and the edge ring E and the cover ring C are unintentionally separated. It is possible to more reliably suppress the generation of particles due to

The integral ring Rc in the example of FIG. 7 is configured such that the lower surface of the protrusion Cb1 of the cover ring Cb and the upper surface of the peripheral edge portion of the edge ring E are in contact with each other. Furthermore, the upper surface of the outermost peripheral portion of the edge ring E and the lower surface of the outermost peripheral portion of the protrusion Cb1 are joined together. In other words, the integral ring Rc is such that the joint portion B is positioned between the upper and side surfaces of the outermost peripheral portion of the edge ring E and the surface of the cover ring Cb facing them.

In the integrated ring Rc, the upper portion of the joint B (specifically, the upper portion of the entire upper portion of the joint B) is covered with the projecting portion Cb1. Therefore, even with the integrated ring Rc, the area of the joint portion B exposed to the plasma processing space 100s can be reduced compared to the integrated ring R shown in FIG. 3 and the like. Further, in the integrated ring Rc, there is substantially no gap between the lower surface of the innermost circumferential portion of the protruding portion Cb1 of the cover ring Cb and the upper surface of the edge ring E facing thereto. Therefore, it is possible to prevent plasma and particles from reaching the junction B. FIG. In addition to this, the area of the joint B is large. Therefore, in the integral ring Rc, the connection between the edge ring E and the cover ring Cb is consumed by plasma and is unintentionally broken, and the edge ring E and the cover ring C are separated unintentionally. It is possible to more reliably suppress the generation of particles due to

In the example of FIG. 7, when bonding with an adhesive is used for the bonding portion B, an upwardly recessed recess may be provided on the lower surface of the outermost peripheral portion of the projecting portion Cb1, and the recess may be filled with the adhesive. good.

For example, if the bonding method used for the joint B does not pose a problem even if it is exposed to plasma, the upper part of the joint B is covered with both the edge ring and the cover ring like the integral ring Ra shown in FIG. An irregularly shaped solid ring is used.

Also, for example, if the bonding method used for the bonding portion B poses a problem when exposed to plasma, integral rings such as the integral rings Ra, Rb, and Rc shown in FIGS. 5 to 7 are used. That is, an integrated ring having a shape that hides the bonding portion B from plasma generated in the plasma processing chamber 100 when placed on the wafer support table 101 is used. Specifically, an integrated ring is used in which at least the upper portion of the joint B is covered with one of the integrated consumable members (for example, an edge ring or a cover ring).

<Another example of operation of integrated ring after installation>
In the above example, the integrated ring R maintains the connection between the edge ring E and the cover ring C even after being attached to the wafer support 101, and the removal of the edge ring E and the cover ring C is performed in the integrated ring R state. It was

However, the integrated ring R may be separated into the edge ring E and the cover ring C after being attached to the wafer support table 101 by releasing the above bonding. The disconnection between the edge ring E and the cover ring C is performed, for example, in the following cases. That is, when the replacement frequency required for the edge ring E and the cover ring C is different and the replacement timing of one ring and the replacement timing of another member in the plasma processing chamber 100 are the same, or when the edge ring E and the cover ring C are replaced. are once attached to the wafer support 101 and then both rings are arranged at different heights.

Here, it is assumed that the cover ring C is replaced more frequently than the edge ring E, and that the connection between the edge ring E and the cover ring C is released (the edge ring E and the cover ring C are separated) after installation. . In this case, the replacement of the single cover ring C and the replacement of the edge ring E after the release of the joining is performed, for example, as follows.

The replacement of the single cover ring C is performed using the transfer device 70 and the lifter 108 under a vacuum atmosphere.
When exchanging the edge ring E, first, at the timing of exchanging other members in the plasma processing chamber 100, the operator opens the plasma processing chamber 100 to the atmosphere, and then the other member and the edge ring E Remove the At this time, the cover ring C is removed by the operator, or removed in advance using the conveying device 70 and the lifter 108 under the control of the control device 80 . The worker then installs the new other member. After that, under the control of the controller 80, the plasma processing chamber 100 is started to be evacuated, and a new integral ring R is attached using the transfer device 70 and the lifter 108. FIG.

When the single cover ring C is replaced in a vacuum atmosphere, as shown in FIG. If the single unit is to be replaced in a vacuum atmosphere, only those that engage with the edge ring E are provided.

Further, when the single cover ring is replaced in a vacuum atmosphere using the lifter 108, the integrated ring may be mounted above the edge ring E, such as the integrated ring R shown in FIG. is not covered with the cover ring C.
On the other hand, when the single edge ring is replaced in a vacuum atmosphere using a lifter, the integrated ring has an edge ring E above the cover ring C, such as the integrated ring Rb in FIG. 6 and the integrated ring Rc in FIG. The one that is not covered with is used.

Release of the bond between the edge ring E and the cover ring C (separation of the edge ring E and the cover ring C) is performed by heating the integral ring R and changing the degree of vacuum in the plasma processing chamber 100 under the control of the control device 80. , physical impact on joint B, plasma exposure of joint B, or a combination of several.

Specifically, for example, when a polyimide-based adhesive tape or a hot-melt or sublimation adhesive is used to join the joint B, the controller 80 controls the heating mechanism to Heat B. Specifically, the control device 80 controls a temperature control medium supply mechanism having a chiller unit (not shown) to cause high-temperature brine to flow through the flow path 109 to heat the integrated ring R and heat the joint B. do. As a result, the adhesive force of the adhesive tape is reduced, the adhesive is melted or sublimated, and the bonding is released.

Further, when the joint Ba1 is scattered at the joint Ba as shown in FIG. A relative positional deviation may be caused between E and the cover ring C, and a load may be applied to the joint Ba1 to release the joint (separate the edge ring E and the cover ring C).

When a polyimide-based adhesive tape is used for joining the joint portion B, plasma is generated in the plasma processing chamber 100 under the control of the control device 80, and the plasma reduces the adhesive strength of the adhesive tape. good too.
Also, when a sublimation adhesive is used to bond the joint B, the controller 80 controls the exhaust system 150 to reduce the pressure in the plasma processing chamber 100, thereby sublimating the adhesive, The joining may be released (the edge ring E and the cover ring C may be separated).

Further, for example, the joining may be released (the edge ring E and the cover ring C are separated) in the following manner. That is, the controller 80 controls a DC power supply (not shown) that applies a DC voltage to the electrode 111 to fix the edge ring E by the electrostatic chuck 104 as a fixing unit. In this state, the control device 80 controls the drive section 118 of the lifting mechanism 116 to lift the lifter 108 as shown in FIG. may be separated from the ring C).
That is, under the control of the control device 80, one of the edge ring and the cover ring is fixed by the fixing portion, and the other of the edge ring and the cover ring is lifted by the elevating member. and the cover ring may be released (the edge ring E and the cover ring C are separated).

It should be noted that the disconnection of the edge ring E and the cover ring C (separation of the edge ring E and the cover ring C) is performed, for example, after the edge ring E and the cover ring C are attached to the processing module 60. Until the plasma processing is started or restarted in , the integral ring R is heated or the like to be intentionally separately performed. However, the release of the joint between the edge ring E and the cover ring C (separation into the edge ring E and the cover ring C) depends on the heat and heat acting on the joint B during the plasma processing in the processing module 60 after the attachment. It may be performed by plasma irradiation or the like.

While various exemplary embodiments have been described above, various additions, omissions, substitutions, and modifications may be made without being limited to the exemplary embodiments described above. Also, elements from different embodiments can be combined to form other embodiments.

1 plasma processing system 60 processing module 70 transfer device 80 control device 100 plasma processing chamber 101 wafer support C, Ca, Cb cover ring E edge ring R, Ra, Rb, Rc integral ring W wafer

Claims (8)

A substrate support table on which a substrate and a consumable member are placed, and a processing container in which the substrate support table is provided and which is configured to be depressurized, and plasma processing is performed on the substrate on the substrate support table. A plasma processing apparatus to perform,
a transport device for loading and unloading the substrate with respect to the processing container;
a controller;
The control device is
An integrated member obtained by joining and integrating a plurality of consumable members is transported into the processing container by the transport device;
A plasma processing system for controlling the integrated member to be placed on the substrate support from the transfer device. The integral member is bonded by any one of adhesion using an adhesive, adhesion using an adhesive, diffusion bonding, room temperature bonding, anodic bonding, fusion welding, pressure welding, and brazing, or a combination of a plurality of the plurality of 2. The plasma processing system of claim 1, wherein the consumable members of are bonded. 3. The plasma according to claim 1, wherein said integral member has a shape such that a joint portion between said consumable members is hidden from plasma generated within said processing container when placed on said substrate support. processing system. The control device is
4. The plasma processing system according to any one of claims 1 to 3, wherein control is performed such that the consumable members in the integrated member are disconnected from each other and the integrated member is split. The substrate support has a heating mechanism for heating the integrated member,
5. The plasma processing system of claim 4, wherein the controller controls the heating mechanism such that the consumable members are debonded. The substrate support has an elevating member that moves up and down with respect to a mounting surface on which the integrated member is mounted, and a fixing portion that fixes the integrated member,
In the control device, in a state in which the one consumable member constituting the integrated member is fixed by the fixing portion, the other consumable member constituting the integrated member is lifted by the elevating member, and the one consumable member is moved up. 6. The plasma processing system according to claim 4 or 5, wherein control is performed such that the connection between the consumable member and the other consumable member is released. 7. The plasma processing system according to any one of claims 1 to 6, wherein said integrated member is formed by integrating an edge ring and a cover ring as said consumable member. A method of installing a plurality of consumables in a plasma processing system, comprising:
The plasma processing system comprises:
A substrate support table on which a substrate and the consumable member are placed, and a processing container in which the substrate support table is provided and which is configured to be depressurized, wherein plasma processing is performed on the substrate on the substrate support table. A plasma processing apparatus that performs
a transport device for loading and unloading the substrate with respect to the processing container,
a step of transporting an integral member in which the plurality of consumable members are joined and integrated into the processing container by the transport device;
placing the integrated member from the transfer device onto the substrate support.

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