JP2022129983A - Photocathode with protective film - Google Patents

Photocathode with protective film Download PDF

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JP2022129983A
JP2022129983A JP2021028896A JP2021028896A JP2022129983A JP 2022129983 A JP2022129983 A JP 2022129983A JP 2021028896 A JP2021028896 A JP 2021028896A JP 2021028896 A JP2021028896 A JP 2021028896A JP 2022129983 A JP2022129983 A JP 2022129983A
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photocathode
protective film
substrate
film
stage
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将博 山本
Masahiro Yamamoto
磊 郭
Lei Guo
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High Energy Accelerator Research Organization
National Institute of Natural Sciences
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National Institute of Natural Sciences
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Abstract

To provide a photocathode with a protective film having high brightness and a long life even in a relatively easily obtained high vacuum environment (for example, 10-5 Pa or higher), a manufacturing method of the same.SOLUTION: A photocathode with a protective film includes a photocathode 2 made of an alkaline metal thin film, a protective film 4 which is a monoatomic layer or an electron-permeable thin film provided on the surface of the photocathode 2, and a sealing material 3 that encloses and airtightly packages the photocathode 2 and the protective film 4. In addition, after facing the protective film 4 provided on a mesh-shaped second substrate 4a toward the photocathode 2, the first substrate 2a and the second substrate 4a are airtightly sealed to the photocathode 2 formed on the first substrate 2a in a vacuum environment.SELECTED DRAWING: Figure 1

Description

本発明は、比較的容易に得られる高真空環境(例えば10-5Pa以上)においても、高輝度で長寿命な保護膜付き光陰極(フォトカソード)、その製造方法及び製造装置に関するものである。 The present invention relates to a photocathode with a protective film (photocathode) with high brightness and long life even in a relatively easily obtained high vacuum environment (for example, 10 −5 Pa or higher), its manufacturing method and manufacturing apparatus. .

負の電子親和性(NEA)の半導体、或いはアルカリ金属薄膜のフォトカソードなどの光陰極では、短パルス(ピコ秒~ナノ秒のオーダー)で数~10数%の非常に高い量子効率(QE)が得られる。したがって、自由電子レーザー等の近年の先端的な電子加速器、その他、電子顕微鏡、電子線リソグラフィー、高輝度の電子線が必要となるごく一部の電子源、装置に利用されている。 Negative electron affinity (NEA) semiconductors or photocathodes such as alkali metal thin film photocathode have extremely high quantum efficiency (QE) of several to several ten percent in short pulses (order of picoseconds to nanoseconds). is obtained. Therefore, they are used in recent advanced electron accelerators such as free electron lasers, electron microscopes, electron beam lithography, and a small number of electron sources and devices that require high-brightness electron beams.

しかし、これらの光陰極は化学的に活性なため、具体的には装置内の残留ガスとの反応性の高さから、使用に際しては超高真空環境が不可欠で、ビーム加速における電子源としては10-7Pa以下の良好な真空環境が必要であり、寿命も短い欠点があった。また、光陰極の使用に際しては、定期的なメンテナンスが必要であり、用途が限られているのが現状である。 However, since these photocathodes are chemically active, specifically due to their high reactivity with the residual gas in the apparatus, an ultra-high vacuum environment is essential for their use. A favorable vacuum environment of 10 −7 Pa or less is required, and there is also the drawback that the service life is short. In addition, when using the photocathode, periodic maintenance is required, and the current situation is that the application is limited.

近年の先端的な電子加速器および将来計画では大電流かつ高輝度の電子ビームが長時間安定に生成できる光陰極が求められており、特許文献1のように、保護膜として、グラフェン膜を備える光陰極が提案され、従来よりも数桁長い寿命を達成できる可能性があることを見いだした。 Recent advanced electron accelerators and future plans require a photocathode that can stably generate a high-current and high-brightness electron beam for a long time. Cathodes have been proposed and found to have the potential to achieve lifetimes several orders of magnitude longer than conventional ones.

しかしながら、実用に際しては、一定の大きさの保護膜を気密的に光陰極に備える必要があるが、非特許文献1ではその点を解決できていなかった。 However, in practical use, it is necessary to airtightly provide a protective film of a certain size on the photocathode, and Non-Patent Document 1 cannot solve this point.

米国特許8,823,259公報U.S. Pat. No. 8,823,259

そこで、本発明は、比較的容易に得られる高真空環境(例えば10-5Pa以上)においても、高輝度で長寿命な保護膜付き光陰極(フォトカソード)、その製造方法及び製造装置を提供することを目的とする。 Therefore, the present invention provides a high-luminance, long-life photocathode with a protective film (photocathode) even in a relatively easily obtained high-vacuum environment (for example, 10 −5 Pa or higher), its manufacturing method, and manufacturing apparatus. intended to

上記の課題を解決するために、本願発明は、
(1)
アルカリ系金属薄膜の光陰極と、
前記光陰極の表面に備えられた単原子層又は電子が透過可能な薄膜である保護膜と、
前記光陰極及び前記保護膜を内包し気密的にパッケージするシール材と、
からなることを特徴とする保護膜付き膜光陰極。
(2)
前記光陰極を、第一基板上に成膜された光陰極とし、前記保護膜を、メッシュ部を備える第二基板に前記メッシュ部を覆い密着した保護膜としたことを特徴とする(1)に記載の保護膜付き光陰極。
(3)
前記シールが、インジウムの線材の低融点・低アウトガス性の熱溶融圧着物であることを特徴とする(2)に記載の保護膜付き光陰極。
(4)
(1)に記載の保護膜付き光陰極を、10-5Pa以上の真空環境で使用できることを特徴とする保護膜付き光陰極の使用方法。
(5)
(1)に記載の保護膜付き膜光陰極の製造方法であって、
真空環境下で第一基板上に成膜された前記光陰極に、メッシュ状の第二基板に備えられた前記保護膜を前記光陰極に向けたうえで、前記第一基板と前記第二基板を気密的にシールすることを特徴とする保護膜付き膜光陰極の製造方法。
(6)
(1)に記載の保護膜付き膜光陰極の製造方法に用いる保護膜付き膜光陰極の製造装置であって、
真空チャンバーと、
前記真空チャンバー内で前記第一基板を固定する第一ステージと、
前記真空チャンバー内で前記第二基板を保持しヒータを備える第二ステージとからなり、
前記第一ステージと前記第二ステージの何れか或いは両方を移動させ近づけ押し当てたうえで、
前記第一基板に載置した熱溶解性シール材を前記ヒータで加熱溶解させ、前記第一基板と前記第二基板を気密的にシールすることを特徴とする保護膜付き膜光陰極の製造装置。
(7)
前記熱溶解性シール材が環状シールで、前記ヒータが前記環状シール部を環状に加熱するヒータであることを特徴とする(6)に記載の保護膜付き膜光陰極の製造装置。
とした。
In order to solve the above problems, the present invention is
(1)
a photocathode of an alkaline metal thin film;
a protective film that is a monoatomic layer or an electron-permeable thin film provided on the surface of the photocathode;
a sealing material that encloses and airtightly packages the photocathode and the protective film;
A film photocathode with a protective film, comprising:
(2)
(1) wherein the photocathode is a photocathode formed on a first substrate, and the protective film is a protective film that covers and adheres to a second substrate having a mesh portion, covering the mesh portion; A photocathode with a protective film according to .
(3)
The photocathode with a protective film according to (2), wherein the seal is a low-melting-point, low-outgassing hot-melt compression bond of an indium wire.
(4)
A method for using a photocathode with a protective film according to (1), wherein the photocathode with a protective film can be used in a vacuum environment of 10 −5 Pa or higher.
(5)
A method for producing a film photocathode with a protective film according to (1),
The first substrate and the second substrate are formed on the photocathode formed on the first substrate in a vacuum environment, and the protective film provided on the mesh-like second substrate is directed toward the photocathode. is hermetically sealed.
(6)
An apparatus for manufacturing a film photocathode with a protective film used in the method for manufacturing a film photocathode with a protective film according to (1),
a vacuum chamber;
a first stage for fixing the first substrate within the vacuum chamber;
a second stage that holds the second substrate in the vacuum chamber and has a heater;
After moving and pressing either or both of the first stage and the second stage,
An apparatus for manufacturing a film photocathode with a protective film, wherein a heat-soluble sealing material placed on the first substrate is heated and melted by the heater to airtightly seal the first substrate and the second substrate. .
(7)
The apparatus for producing a film photocathode with a protective film according to (6), wherein the hot-melt sealing material is an annular seal, and the heater is a heater for heating the annular seal part in an annular shape.
and

ここで、光陰極は、従来の光陰極が採用できる。 Here, a conventional photocathode can be adopted as the photocathode.

保護膜は、グラフェン、シリセン、六方晶窒化ホウ素(hBN)など単原子層、あるいは光、電子を透過させることがき、一方、ガス不透過性である十分薄い薄膜から構成され、光陰極に対して不活性(悪影響を与えず)、かつ一般的な残留ガス(水素、メタン、水、一酸化炭素、窒素、酸素、二酸化炭素等)に対しても化学的に安定(反応及びイオン衝突に耐性がある)な1辺数mm相当以上の均一な、化学的・物理的に強固に結合した膜である。 The protective film may consist of a monoatomic layer such as graphene, silicene, hexagonal boron nitride (hBN), or a sufficiently thin thin film that is permeable to light and electrons, but impermeable to gases, and is directed against the photocathode. Inert (no adverse effects) and chemically stable (resistant to reactions and ion collisions) against common residual gases (hydrogen, methane, water, carbon monoxide, nitrogen, oxygen, carbon dioxide, etc.) It is a uniform, chemically and physically strongly bonded film with a side length of several millimeters or more.

シールは、ガス透過性の低く、かつガス放出も低い物質を用いる。例えば、インジウム線のリングが例示でき、第一基板と第二基板の接合時に接合部を短時間加熱し、インジウムを溶融させることで気密性を確保する。加熱時は光陰極が高温にならないように接合部のみ局所的に加熱する装置を利用するとよい。アルカリ金属系薄膜の光陰極であるKCsSbは70℃程度までは安定であるので、周囲にインジウム線を置き、瞬時に加熱・融解させて基板同士を気密的に接合させることが可能である。 The seal uses materials with low gas permeability and low outgassing. For example, an indium wire ring can be exemplified, and when the first substrate and the second substrate are bonded, the bonding portion is heated for a short time to melt the indium to ensure airtightness. It is preferable to use a device that locally heats only the junction so that the photocathode does not become hot during heating. Since K 2 CsSb, which is the photocathode of the alkali metal thin film, is stable up to about 70° C., it is possible to airtightly join the substrates by placing an indium wire around it and instantly heating and melting it. .

本発明は、上記構成であるので、次の効果を奏する。図5に示すように、光陰極の表面に気密的に保護膜を備えることにより、電子源内において、光陰極に対して活性な残留ガス(水素、水、一酸化炭素、酸素、二酸化炭素など)に直接触れることがなく、光照射(hv)により光陰極で発生した電子(e)は保護膜を通過し、取り出される。 Since the present invention is configured as described above, it has the following effects. As shown in FIG. 5, by airtightly providing a protective film on the surface of the photocathode, residual gases (hydrogen, water, carbon monoxide, oxygen, carbon dioxide, etc.) active against the photocathode in the electron source Electrons (e ) generated in the photocathode by light irradiation (hv) pass through the protective film and are taken out.

この保護膜を気密的に備えることによってこれまで光陰極の使用が困難であった高真空環境(10-5Paより高い圧力)で高量子効率を維持したまま光陰極を長時間利用できる。一般的な粗びき排気系(ロータリーポンプとターボ分子ポンプの組合せ等)で容易に得られる高真空(10-5Pa程度)で効率的に光電子を取り出すことができる。
したがって、超高真空生成が困難な機器の電子源として利用が可能となる。さらに、半導体、或いはアルカリ金属薄膜のフォトカソードから発生する電子ビームは一般的に使用されている熱電子源より高輝度であり、そして短パルス電子線を利用することで時間分解能を付与した計測も可能となる。
また、超高真空が得られる環境においても従来の光陰極と比べて寿命がはるかに長くなるため、これまで光陰極の定期的な管理が不要となるメンテナンスフリーの電子源として利用できる可能性がある。
よって、本発明の光陰極を、大電流電子ビームを必要とする先端電子加速器の他、電子顕微鏡や電子線リソグラフィーなどの電子源に対して広く利用することが可能になる。
By airtightly providing this protective film, the photocathode can be used for a long time while maintaining high quantum efficiency in a high-vacuum environment (pressure higher than 10 −5 Pa), which has hitherto been difficult to use. Photoelectrons can be efficiently extracted in a high vacuum (approximately 10 −5 Pa) easily obtained by a general roughing exhaust system (a combination of a rotary pump and a turbo-molecular pump, etc.).
Therefore, it can be used as an electron source for equipment in which it is difficult to generate an ultra-high vacuum. Furthermore, the electron beam generated from the semiconductor or alkali metal thin film photocathode is brighter than the thermoelectron source generally used, and the measurement with time resolution is also possible by using the short-pulse electron beam. It becomes possible.
In addition, even in an ultra-high vacuum environment, the life of the photocathode is much longer than that of a conventional photocathode, so there is a possibility that it can be used as a maintenance-free electron source that does not require regular maintenance of the photocathode. be.
Therefore, the photocathode of the present invention can be widely used for electron sources such as electron microscopes and electron beam lithography, as well as advanced electron accelerators that require high-current electron beams.

図1は、本発明である保護膜付き光陰極の製造方法の一部断面による説明模式図である。FIG. 1 is a schematic view showing a partial cross-section of the method for producing a photocathode with a protective film according to the present invention. 図2は、図1の光陰極部及び保護膜部付近の拡大図である。FIG. 2 is an enlarged view of the vicinity of the photocathode portion and protective film portion in FIG. 図3は、図1において、第一ステージをロッドで移動させ、第二ステージに押し当てて、気密シールする状態を示す断面模式図であるFIG. 3 is a cross-sectional schematic diagram showing a state in FIG. 1 in which the first stage is moved by a rod and pressed against the second stage to form an airtight seal. 図4は、図3において、気密シールした後の保護膜付き光陰極の部分拡大断面模式図である。FIG. 4 is a partially enlarged schematic cross-sectional view of the photocathode with a protective film after airtight sealing in FIG. 図5は、保護膜付きを光陰極による電子発生の説明模式図である。FIG. 5 is a schematic diagram for explaining electron generation by a photocathode with a protective film.

以下、添付の図面を参照し、本発明の実施の形態について、詳細に説明する。なお、本発明は下記形態例に限定されるものではない。 BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In addition, the present invention is not limited to the following embodiments.

図1-4を参照して、本発明である保護膜付き光陰極、その製造方法及び製造装置について、説明する。 A photocathode with a protective film according to the present invention, its manufacturing method and manufacturing apparatus will be described with reference to FIGS. 1 to 4. FIG.

<保護膜付き光陰極>
図4,5に示すように、保護膜付き光陰極1は、アルカリ系金属薄膜の光陰極2と、光陰極2の表面に備えられた単原子層又は電子が透過可能な薄膜である保護膜4と、光陰極2及び保護膜4を内包し気密的にパッケージするシール材3と、からなる。
<Photocathode with protective film>
As shown in FIGS. 4 and 5, the photocathode 1 with a protective film includes a photocathode 2 made of an alkali metal thin film and a protective film which is a monoatomic layer or a thin film through which electrons can pass, provided on the surface of the photocathode 2. 4 and a sealing material 3 for enclosing and airtightly packaging the photocathode 2 and the protective film 4 .

より詳しくは、図4に示すように、光陰極2は、真空環境下で、第一基板2a上に真空蒸着など光陰極薄膜の素材に適した成膜装置(図示省略)で成膜される。第一基板2aは、金属、半導体などで、光陰極2を成膜する成膜エリア2cと、成膜エリア2cを囲む凹部2bの両サイドの壁からなる。凹部2bには、環状のシール材3を載置する。 More specifically, as shown in FIG. 4, the photocathode 2 is formed in a vacuum environment on the first substrate 2a by a film forming apparatus (not shown) suitable for the material of the photocathode thin film, such as vacuum deposition. . The first substrate 2a is made of metal, semiconductor, or the like, and comprises a film forming area 2c in which the photocathode 2 is formed and walls on both sides of a concave portion 2b surrounding the film forming area 2c. An annular sealing material 3 is placed in the recess 2b.

保護膜4は、メッシュ部4bを備える第二基板4aにメッシュ部4bを覆い密着4cする、例えばファンデルワールス力で密着する。第二基板4aは、金属などで、光照射で生成された電子をメッシュ部4b通し放出する。 The protective film 4 covers the mesh portion 4b of the second substrate 4a having the mesh portion 4b and adheres thereto 4c, for example, by Van der Waals force. The second substrate 4a is made of metal or the like, and emits electrons generated by light irradiation through the mesh portion 4b.

保護膜4は、例えば、その成膜装置(図示省略)で一端、保護膜成長に適した基板で成長させる。成膜後、保護膜4を成膜した基板から保護膜の種類に適した手法で第二基板4aに写し取って(転写)、保護膜4付き第二基板4aとして、パッケージングに使用する。 The protective film 4 is grown, for example, on a substrate suitable for growth of the protective film in its film forming apparatus (not shown). After the film is formed, the substrate on which the protective film 4 is formed is transferred (transferred) to the second substrate 4a by a method suitable for the type of protective film, and used as the second substrate 4a with the protective film 4 for packaging.

シール材3は、例えば、インジウムの線材の低融点・低アウトガス性の熱溶融圧着物であり、第一基板2aと第二基板4aの光陰極2及び保護膜4で覆われていない部分同士を接合部3aで密着させる。 The sealing material 3 is, for example, a low-melting-point, low-outgassing hot-melt compression bond made of indium wire, and seals the portions of the first substrate 2a and the second substrate 4a that are not covered with the photocathode 2 and the protective film 4. They are brought into close contact at the joining portion 3a.

このようにパッケージングされた保護膜付き光陰極1は、光陰極に対して活性な残留ガスに直接触れることがなく、光照射(hv)により光陰極2で発生した電子(e)は保護膜4を通過して放出する。そして、超高真空ではない真空環境(10-5Paより高い圧力)下でも、高量子効率を維持したまま光陰極2を長時間利用することができる。 The photocathode 1 with a protective film packaged in this way does not come into direct contact with residual gas active on the photocathode, and electrons (e ) generated in the photocathode 2 by light irradiation (hv) are protected. Releases through membrane 4 . In addition, the photocathode 2 can be used for a long time while maintaining high quantum efficiency even in a vacuum environment (pressure higher than 10 −5 Pa) that is not ultra-high vacuum.

<保護膜付き光陰極の製造方法及び製造装置>
図1-4に示すように、保護膜付き光陰極の製造装置10は、第一基板2aを載置する第一ステージ11と、第二基板4aを保持する第二ステージ14とかなる。
<Method and apparatus for manufacturing photocathode with protective film>
As shown in FIG. 1-4, the apparatus 10 for manufacturing a photocathode with a protective film comprises a first stage 11 on which the first substrate 2a is placed and a second stage 14 on which the second substrate 4a is held.

この例では、保護膜付き光陰極の製造装置10に、さらに第一基板2aを第一ステージ11に固定する押さえ12と、第一ステージ11を第二ステージ14方向に対して前後動して移動させるロッド13とを備える。 In this example, the protective film-equipped photocathode manufacturing apparatus 10 further includes a retainer 12 for fixing the first substrate 2a to the first stage 11, and the first stage 11 moving back and forth with respect to the direction of the second stage 14. and a rod 13 that allows the

ここでは、第一ステージ11を移動させ、第二ステージ14に押し当てているが、第二ステージ14を移動させても、第一、第二ステージ11、14の両方を移動させてもよい。第一ステージ11は、光陰極2の成膜装置から、真空チャンバー15に移動させる際も使用することができる。 Although the first stage 11 is moved and pressed against the second stage 14 here, the second stage 14 may be moved, or both the first and second stages 11 and 14 may be moved. The first stage 11 can also be used when moving the photocathode 2 from the film forming apparatus to the vacuum chamber 15 .

それらは、真空チャンバー15の中で、気密的なパッケージングに利用される。すなわち第一基板2a及び第二基板4aで光陰極2及び保護膜4を挟持し、シール材3により第一基板2a及び第二基板4aを接合し、光陰極2及び保護膜4を内包する。 They are used for hermetic packaging in vacuum chamber 15 . That is, the photocathode 2 and the protective film 4 are sandwiched between the first substrate 2a and the second substrate 4a, and the first substrate 2a and the second substrate 4a are joined with the sealing material 3 to enclose the photocathode 2 and the protective film 4.

第一ステージ11は、内部窪みにロッド13を嵌め、上面には第一基板2aを載置する窪んだ載置部11aを備え、端部にはフランジ11bを形成し、真空チャンバー15内で第一基板2aを固定する。 The first stage 11 has a rod 13 fitted in an internal recess, has a recessed mounting portion 11a on the upper surface for mounting the first substrate 2a, and has a flange 11b formed at the end. One substrate 2a is fixed.

フランジ11bは、第一ステージを光陰極2の成膜装置、保護膜付き光陰極1を電子銃などの設置先に固定する際に使用するが、固定、設置先に合わせ、フランジ11bの有無、形状、他の固定、設置手段は適宜選択すればよい。 The flange 11b is used when the first stage is fixed to a film formation device for the photocathode 2, and the photocathode 1 with a protective film is fixed to an installation destination such as an electron gun. The shape and other fixing and installation means may be selected as appropriate.

第二ステージ14は、内部空洞14dの内枠14aと外枠14bの間の環状の溝14cに環状のヒータ14eを備え、真空チャンバー15内で第二基板4aを保持し、図3の状態でシール材3を環状に加熱する。 The second stage 14 is equipped with an annular heater 14e in an annular groove 14c between the inner frame 14a and the outer frame 14b of the internal cavity 14d, holds the second substrate 4a in the vacuum chamber 15, and holds the second substrate 4a in the state of FIG. The sealing material 3 is heated in an annular shape.

なお、第二ステージ14は、図示省略の移動ロッドに固定され、真空チャンバー15内に挿抜できるよう構成されている。また、第二ステージ14は、パッケージング後、真空チャンバー15から引き抜かれるが、その際、第二基板4aは、第一基板2aに融着しているため、第二ステージ14と第二基板4aは分離する。 It should be noted that the second stage 14 is fixed to a moving rod (not shown) and configured to be inserted into and removed from the vacuum chamber 15 . After packaging, the second stage 14 is pulled out from the vacuum chamber 15. At that time, the second substrate 4a is fused to the first substrate 2a. separates.

その結果、真空環境下で、第一基板2aと第二基板4aで、光陰極2及び保護膜4を挟持したうえで、内包して気密的にシールすることができる。 As a result, in a vacuum environment, the photocathode 2 and the protective film 4 can be sandwiched between the first substrate 2a and the second substrate 4a, and then enclosed and hermetically sealed.

このようにして、第一、第二基板2a、4a、保護膜4、シール材3によって、環境雰囲気を遮断するようパッケージングした光陰極2は、パッケージングされたまま、各種装置に取り付け、電子源として利用される。より安定を図るため、真空環境下の装置に装着するまで、真空下で移動、輸送することが望ましい。 In this way, the photocathode 2 packaged so as to block the environmental atmosphere by the first and second substrates 2a, 4a, the protective film 4, and the sealing material 3 is attached to various devices while being packaged, and used as an electronic device. used as a source. In order to ensure greater stability, it is desirable to move and transport the device under vacuum until it is attached to a device under a vacuum environment.

1 保護膜付き光陰極
2 光陰極
2a 第一基板
2b 凹部
2c 成膜エリア
3 シール材
3a 接合部
4 保護膜
4a 第二基板
4b メッシュ部
4c 密着
10 保護膜付き光陰極の製造装置
11 第一ステージ
11a 載置部
11b フランジ
12 押さえ
13 ロッド
14 第二ステージ
14a 内枠
14b 外枠
14c 溝
14d 空洞
14e ヒータ
15 真空チャンバー
1 Photocathode with Protective Film 2 Photocathode 2a First Substrate 2b Recess 2c Film Forming Area 3 Sealing Material 3a Joining Portion 4 Protective Film 4a Second Substrate 4b Mesh Portion 4c Adhesion 10 Photocathode with Protective Film Manufacturing Apparatus 11 First Stage 11a Mounting portion 11b Flange 12 Presser 13 Rod 14 Second stage 14a Inner frame 14b Outer frame 14c Groove 14d Cavity 14e Heater 15 Vacuum chamber

Claims (7)

アルカリ系金属薄膜の光陰極と、
前記光陰極の表面に備えられた単原子層又は電子が透過可能な薄膜である保護膜と、
前記光陰極及び前記保護膜を内包し気密的にパッケージするシール材と、
からなることを特徴とする保護膜付き膜光陰極。
a photocathode of an alkaline metal thin film;
a protective film that is a monoatomic layer or an electron-permeable thin film provided on the surface of the photocathode;
a sealing material that encloses and airtightly packages the photocathode and the protective film;
A film photocathode with a protective film, comprising:
前記光陰極を、第一基板上に成膜された光陰極とし、前記保護膜を、メッシュ部を備える第二基板に前記メッシュ部を覆い密着した保護膜としたことを特徴とする請求項1に記載の保護膜付き光陰極。 2. The photocathode is a photocathode formed on a first substrate, and the protective film is a protective film that covers the mesh portion and adheres to the second substrate having the mesh portion. A photocathode with a protective film according to . 前記シールが、インジウムの線材の低融点・低アウトガス性の熱溶融圧着物であることを特徴とする請求項2に記載の保護膜付き光陰極。 3. A photocathode with a protective film according to claim 2, wherein said seal is a low-melting-point, low-outgassing hot-melt compression bond made of indium wire. 請求項1に記載の保護膜付き光陰極を、10-5Pa以上の真空環境で使用できることを特徴とする保護膜付き光陰極の使用方法。 A method of using a photocathode with a protective film according to claim 1, wherein the photocathode with a protective film can be used in a vacuum environment of 10 -5 Pa or higher. 請求項1に記載の保護膜付き膜光陰極の製造方法であって、
真空環境下で第一基板上に成膜された前記光陰極に、メッシュ状の第二基板に備えられた前記保護膜を前記光陰極に向けたうえで、前記第一基板と前記第二基板を気密的にシールすることを特徴とする保護膜付き膜光陰極の製造方法。
A method for manufacturing a film photocathode with a protective film according to claim 1,
The first substrate and the second substrate are formed on the photocathode formed on the first substrate in a vacuum environment, and the protective film provided on the mesh-like second substrate is directed toward the photocathode. is hermetically sealed.
請求項5に記載の保護膜付き膜光陰極の製造方法に用いる保護膜付き膜光陰極の製造装置であって、
真空チャンバーと、
前記真空チャンバー内で前記第一基板を固定する第一ステージと、
前記真空チャンバー内で前記第二基板を保持しヒータを備える第二ステージとからなり、
前記第一ステージと前記第二ステージの何れか或いは両方を移動させ近づけ押し当てたうえで、
前記第一基板に載置した熱溶解性シール材を前記ヒータで加熱溶解させ、前記第一基板と前記第二基板を気密的にシールすることを特徴とする保護膜付き膜光陰極の製造装置。
An apparatus for manufacturing a film photocathode with a protective film used in the method for manufacturing a film photocathode with a protective film according to claim 5,
a vacuum chamber;
a first stage for fixing the first substrate within the vacuum chamber;
a second stage that holds the second substrate in the vacuum chamber and has a heater;
After moving and pressing either or both of the first stage and the second stage,
An apparatus for manufacturing a film photocathode with a protective film, wherein a heat-soluble sealing material placed on the first substrate is heated and melted by the heater to airtightly seal the first substrate and the second substrate. .
前記熱溶解性シール材が環状シールで、前記ヒータが前記環状シール部を環状に加熱するヒータであることを特徴とする請求項6に記載の保護膜付き膜光陰極の製造装置。 7. The apparatus for producing a film photocathode with a protective film according to claim 6, wherein said heat-meltable sealing material is an annular seal, and said heater is a heater for heating said annular seal portion in an annular shape.
JP2021028896A 2021-02-25 2021-02-25 Photocathode with protective film Pending JP2022129983A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115915567A (en) * 2023-03-01 2023-04-04 北京大学 Movable long-life photocathode standard component and implementation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115915567A (en) * 2023-03-01 2023-04-04 北京大学 Movable long-life photocathode standard component and implementation method thereof
CN115915567B (en) * 2023-03-01 2023-05-16 北京大学 Movable long-service-life photocathode standard component and implementation method thereof

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