JP2022124887A - Substrate support part and plasma processing apparatus - Google Patents

Abstract

To enhance a heat-removal performance in a power feeding part of a substrate support part.SOLUTION: There is provided a substrate support part that has: an electrostatic chuck for placing a substrate; a base that supports the electrostatic chuck; a first power feeding terminal electrically connected with an electrode in the electrostatic chuck; a second power feeding terminal arranged in a through-hole in the base so as to be separated from the first power feeding terminal; a flexible feeder line electrically connecting between the first and second power feeding terminals; and a heat transfer member provided between the second power feeding terminal and the base.SELECTED DRAWING: Figure 4

Description

The present disclosure relates to substrate supports and plasma processing apparatuses.

For example, Patent Literature 1 proposes a power supply mechanism for supplying power to a heater electrode arranged on a substrate supporting portion on which a substrate is placed. The inner wall of the through-hole in the base of the substrate support is covered with a sleeve, and the power supply mechanism is provided inside the sleeve. The power supply mechanism has a contact and wiring connected to the heater electrode. A second portion of the wire supports the first portion such that the first portion of the wire is bent between the contact and the second portion.

JP 2016-27601 A

If the power supply part has poor heat removal, it is likely to become a temperature singular point.

The present disclosure provides a technique capable of improving heat removal in a power feeding portion of a substrate supporting portion.

According to one aspect of the present disclosure, an electrostatic chuck on which a substrate is placed, a base that supports the electrostatic chuck, and a first power supply terminal that is electrically connected to an electrode in the electrostatic chuck. and a second power supply terminal arranged inside the through hole in the base so as to be separated from the first power supply terminal, and electrically connecting the first power supply terminal and the second power supply terminal. A substrate supporting portion is provided that includes a connecting flexible power supply line and a heat transfer member provided between the second power supply terminal and the base.

According to one aspect, it is possible to improve the heat removal property in the power feeding portion of the substrate supporting portion.

1 illustrates an example of a plasma processing system according to one embodiment; FIG. BRIEF DESCRIPTION OF THE DRAWINGS The schematic sectional drawing which shows an example of the plasma processing apparatus which concerns on one Embodiment. FIG. 3 is a schematic cross-sectional view showing an example of a main part of a substrate supporting portion in the plasma processing apparatus of FIG. 2; FIG. 4 is an enlarged cross-sectional view of the vicinity of the power feeding portion of the substrate supporting portion according to one embodiment; FIG. 5 is a diagram for explaining the effect of the power supply portion of the substrate support portion according to the embodiment; The figure which shows the modification of the electric power feeding part of the board|substrate support part which concerns on one Embodiment.

Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same components are denoted by the same reference numerals, and redundant description may be omitted.

[Plasma processing system]
First, a plasma processing system according to one embodiment will be described with reference to FIG. FIG. 1 is a diagram illustrating an example of a plasma processing system according to one embodiment. In one embodiment, a plasma processing system includes a plasma processing apparatus 1 and a controller 2 . The plasma processing apparatus 1 includes a plasma processing chamber 10 , a substrate support section 11 and a plasma generation section 12 . Plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas inlet for supplying at least one process gas to the plasma processing space and at least one gas outlet for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply section 20, which will be described later, and the gas discharge port is connected to an exhaust system 40, which will be described later. The substrate support 11 is arranged in the plasma processing space and has a substrate support surface for supporting the substrate.

The plasma generator 12 is configured to generate plasma from at least one processing gas supplied within the plasma processing space. Plasma formed in the plasma processing space includes capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR plasma (Electron-Cyclotron-resonance plasma), helicon wave excited plasma (HWP: Helicon Wave Plasma), surface wave plasma (SWP: Surface Wave Plasma), or the like. Also, various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency within the range of 100 kHz to 10 GHz. Accordingly, AC signals include RF (Radio Frequency) signals and microwave signals. In one embodiment, the RF signal has a frequency within the range of 200 kHz-150 MHz.

Controller 2 processes computer-executable instructions that cause plasma processing apparatus 1 to perform the various steps described in this disclosure. Controller 2 may be configured to control elements of plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1 . The control unit 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. Processing unit 2a1 can be configured to perform various control operations based on programs stored in storage unit 2a2. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[Plasma processing system]
Next, an example configuration of a capacitively-coupled plasma processing apparatus as an example of the plasma processing apparatus 1 will be described with reference to FIG. FIG. 2 is a cross-sectional schematic diagram showing an example of the plasma processing apparatus 1 according to one embodiment.

The plasma processing apparatus 1 includes a plasma processing chamber 10 , a gas supply section 20 , a power supply 30 and an exhaust system 40 . Further, the plasma processing apparatus 1 includes a substrate support section 11 and a gas introduction section. The gas introduction is configured to introduce at least one process gas into the plasma processing chamber 10 . The gas introduction section includes a showerhead 13 . A substrate support 11 is positioned within the plasma processing chamber 10 . The showerhead 13 is arranged above the substrate support 11 . In one embodiment, showerhead 13 forms at least a portion of the ceiling of plasma processing chamber 10 . The plasma processing chamber 10 has a plasma processing space 10 s defined by a showerhead 13 , side walls 10 a of the plasma processing chamber 10 and a substrate support 11 . Side wall 10a is grounded. The showerhead 13 and substrate support 11 are electrically insulated from the plasma processing chamber 10 housing.

Substrate supporter 11 includes base 122 and electrostatic chuck 111 . Substrate support 11 further includes a ring assembly 112 . The electrostatic chuck 111 has a central region (substrate support surface) 111a for mounting a substrate W, an example of which is a wafer, and an annular region (ring support surface) 111b for mounting the ring assembly 112 thereon. The annular region 111b of the electrostatic chuck 111 surrounds the central region 111a of the electrostatic chuck 111 in plan view. The substrate W is placed on the central region 111 a of the electrostatic chuck 111 , and the ring assembly 112 is placed on the annular region 111 b of the electrostatic chuck 111 so as to surround the substrate W on the central region 111 a of the electrostatic chuck 111 . be. In one embodiment, base 122 includes an electrically conductive member. The conductive member of base 122 functions as a lower electrode. The base 122 supports the electrostatic chuck 111 and the electrostatic chuck 111 is arranged on the base 122 . The upper surface of the electrostatic chuck 111 has a substrate support surface 111a. Ring assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring. Also, although not shown, the substrate supporter 11 may include a temperature control module configured to control at least one of the electrostatic chuck 111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include heaters, heat transfer media, channels 123, or combinations thereof. A heat exchange medium flows through the flow path 123 . The heat exchange medium is liquid or gas. Further, the substrate support section 11 may include a heat transfer gas supply section configured to supply a heat transfer gas between the back surface of the substrate W and the substrate support surface 111a. In one embodiment, the channel 123 is formed in the base 122, but it is not limited to this.

The showerhead 13 is configured to introduce at least one processing gas from the gas supply 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas introduction ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through a plurality of gas introduction ports 13c. Showerhead 13 also includes a conductive member. A conductive member of the showerhead 13 functions as an upper electrode. In addition to the showerhead 13, the gas introduction part may include one or more side gas injectors (SGI: Side Gas Injectors) attached to one or more openings formed in the side wall 10a.

Gas supply 20 may include at least one gas source 21 and at least one flow controller 22 . In one embodiment, gas supply 20 is configured to supply at least one process gas from respective gas sources 21 through respective flow controllers 22 to showerhead 13 . Each flow controller 22 may include, for example, a mass flow controller or a pressure controlled flow controller. Additionally, gas supply 20 may include at least one flow modulation device for modulating or pulsing the flow rate of at least one process gas.

Power supply 30 includes an RF power supply 31 coupled to plasma processing chamber 10 via at least one impedance match circuit. RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to conductive members of substrate support 11 and/or conductive members of showerhead 13 . be done. Thereby, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least part of the plasma generator 12 . Further, by supplying the bias RF signal to the conductive member of the substrate supporting portion 11, a bias potential is generated in the substrate W, and ion components in the formed plasma can be drawn into the substrate W. FIG.

In one embodiment, the RF power supply 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generator 31a is coupled to the conductive member of the substrate support 11 and/or the conductive member of the showerhead 13 via at least one impedance matching circuit to provide a source RF signal for plasma generation (source RF electrical power). In one embodiment, the source RF signal has a frequency within the range of 13 MHz to 150 MHz. In one embodiment, the first RF generator 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are provided to conductive members of the substrate support 11 and/or conductive members of the showerhead 13 . The second RF generator 31b is coupled to the conductive member of the substrate support 11 via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In one embodiment, the bias RF signal has a frequency within the range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. One or more bias RF signals generated are provided to the conductive members of the substrate support 11 . Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

Power supply 30 may also include a DC power supply 32 coupled to plasma processing chamber 10 . The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to a conductive member of the substrate support 11 and configured to generate the first DC signal. The generated first DC signal is applied to the conductive member of substrate support 11 . In one embodiment, the first DC signal may be applied to other electrodes, such as electrodes in an electrostatic chuck. In one embodiment, the second DC generator 32b is connected to the conductive member of the showerhead 13 and configured to generate the second DC signal. The generated second DC signal is applied to the conductive members of showerhead 13 . In various embodiments, the first and second DC signals may be pulsed. Note that the first and second DC generators 32a and 32b may be provided in addition to the RF power supply 31, and the first DC generator 32a may be provided instead of the second RF generator 31b. good.

The exhaust system 40 may be connected to a gas outlet 10e provided at the bottom of the plasma processing chamber 10, for example. Exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. Vacuum pumps may include turbomolecular pumps, dry pumps, or combinations thereof.

[Board support part]
Next, the configuration of the substrate supporting portion 11 will be described with reference to FIG. FIG. 3 is a schematic cross-sectional view showing a main part of the substrate supporting portion 11 in the plasma processing apparatus 1 of FIG. 2. As shown in FIG. The substrate support section 11 has a base 122 , an electrostatic chuck 111 on the base 122 , and a ring assembly 112 on a ring support surface 111 b on the outer periphery of the electrostatic chuck 111 . The base 122 has a substantially cylindrical shape and is made of a conductive material such as aluminum.

A flow path 123 formed inside the base 122 is positioned below the substrate W and the ring assembly 112, is connected to a chiller unit (not shown), and circulates a heat exchange medium controlled to a desired temperature by the chiller unit. . The base 122 functions to absorb heat from the substrate W and the ring assembly 112 by a heat exchange medium circulating in the flow path 123 . The electrostatic chuck 111 has, for example, a substantially cylindrical shape and is made of an insulating member such as ceramics. For example, the electrostatic chuck 111 is a sintered body of alumina (Al ₂ O ₃ ) ceramics. Note that the electrostatic chuck 111 is not limited to an alumina ceramics sintered body. For example, the electrostatic chuck 111 is a sintered body containing at least one material selected from alumina, yttria (Y ₂ O ₃ ), silicon carbide (SiC), aluminum nitride (AlN), and silicon nitride (Si ₃ N ₄ ). may be

A substrate support surface 111a of the electrostatic chuck 111 has a circular shape, contacts the rear surface of the substrate W, and supports the disk-shaped substrate W. As shown in FIG. A ring support surface 111 b of the electrostatic chuck 111 has an annular shape and contacts the back surface of the ring assembly 112 to support the annular ring assembly 112 .

The electrostatic chuck 111 is integrally formed with a central portion 111c having a substrate supporting surface 111a as an upper surface and an outer peripheral portion 111d having a ring supporting surface 111b as an upper surface. The height of the central portion 111c of the electrostatic chuck 111 is higher than the height of the outer peripheral portion 111d.

An electrode 230 is embedded in the central portion 111c of the electrostatic chuck 111, and an electrode 231 is embedded in the outer peripheral portion 111d. The electrodes 230 and 231 may be RF electrodes for applying RF signals (RF power) from the RF power supply 31 or DC electrodes for applying DC signals (DC power) from the DC power supply 32 . The electrodes 230 and 231 may be attraction electrodes for electrostatically attracting the substrate W and the ring assembly 112 or heater electrodes for heating the substrate W and the ring assembly 112 .

A ring assembly 112 is arranged around the substrate W. As shown in FIG. The ring assembly 112 has a substantially annular shape and is made of Si (silicon) or SiC, for example. A protrusion projecting radially inward is formed on the inner surface of the ring assembly 112 . That is, the ring assembly 112 has a lower inner diameter of the inner surface that is smaller than the upper inner diameter.

The electrodes 230 in the electrostatic chuck 111 below the substrate W and the electrodes 231 in the electrostatic chuck 111 below the ring assembly 112 are electrically connected to power supply units 200a, 200b, and 200c. A heater electrode will be described below as an example of the electrodes 230 and 231 . Electrodes 230 and 231 are thermal spray heater electrodes formed by thermal spraying. Electrodes 230 , 231 function as heating elements for heating substrate W and ring assembly 112 . The electrodes 230 and 231 are metal films, for example.

When power is supplied to the electrode 230 from the heater power supply 14 shown in FIG.

Similarly, when power is supplied from the heater power supply 14 to the electrode 231 , the power is supplied to the electrode 231 through the power supply units 200 a and 200 c scattered below the electrode 231 . The power supply units 200a, 200b, and 200c have the same configuration. Hereinafter, the power supply units 200a, 200b, and 200c are also collectively referred to as the power supply unit 200. FIG.

As for the power feeding portion 200 provided below the electrode 230, the power feeding portion 200b is illustrated in FIG. Similarly, as for the power feeding portion 200 provided below the electrode 231, power feeding portions 200a and 200c are illustrated in FIG.

The power supply unit 200 will be described with reference to FIG. 4 . FIG. 4 is an enlarged cross-sectional view of the vicinity of the power supply portion 200a of the substrate support portion 11 according to one embodiment, as an example of the power supply portion 200. As shown in FIG. As shown in FIG. 4, the base 122 positioned below the electrode 231 on the outer peripheral portion 111d of the electrostatic chuck 111 is formed with a through hole HL penetrating from the rear surface 122a to the upper surface 122b of the base 122. As shown in FIG. The inner wall of the through hole HL is covered with a cylindrical sleeve 204 . The sleeve 204 is made of an insulating material such as alumina. The sleeve 204 has a stepped portion 204b protruding outward from its upper portion.

A power supply portion 200a electrically connected to the electrode 231 is provided in the through hole HL. The power supply portion 200 a has a first power supply terminal 201 , a second power supply terminal 202 , a power supply line 203 and an adhesive 205 . Note that the adhesive 205 is an example of a heat transfer member provided between the second power supply terminal 202 and the base 122 .

The first power supply terminal 201 is electrically connected to the electrode 231 . The first power supply terminal 201 has a first partial terminal 201a and a second partial terminal 201b. The first partial terminal 201a is embedded in the electrostatic chuck 111, its upper surface is in contact with the electrode 231, its lower surface faces the lower surface 111e of the electrostatic chuck 111, and is joined to the second partial terminal 201b by brazing. It is

The second partial terminal 201b protrudes into the through hole HL from the bottom surface 111e of the electrostatic chuck 111 . The second partial terminal 201b is electrically connected to the second power supply terminal 202 through the power supply line 203 inside the through hole HL. The second power supply terminal 202 has a cylindrical shape with a concave portion 202a inside.

The first partial terminal 201a and the second partial terminal 201b are made of a conductive material. Examples of conductive materials include conductive ceramics and copper, and examples of conductive ceramics include aluminum nitride.

The second power supply terminal 202 is arranged in the through hole HL so as to be separated from the first power supply terminal 201 . An adhesive 205 is provided between the second power supply terminal 202 and the base 122 . In this embodiment, the sleeve 204 inside the base 122 and the second power supply terminal 202 are brought into contact with each other via an adhesive 205 . In other words, the adhesive 205 is not applied to the entire through hole HL, but is applied to the outer circumference of the second partial terminal 201b provided below the through hole HL and between the base 122 (sleeve 204). The space U in which the power supply line 203 is arranged above the through hole HL is not filled with the adhesive. As a result, the contact area between the second power supply terminal 202 and the base 122 via the adhesive 205 can be maintained in order to remove heat from the power supply part 200a, and the contact area between the second power supply terminal 202 and the base 122 can be maintained. The heat can be released to the side and the heat removal can be improved.

Further, the power supply line 203 electrically connects the first power supply terminal 201 and the second power supply terminal 202 and has flexibility. Thereby, the stress generated in the first power supply terminal 201 and the second power supply terminal 202 can be relaxed.

[effect]
The above effect will be described with reference to FIG. FIG. 5 is a diagram for explaining the effect of the power supply section 200 of the substrate support section 11 according to one embodiment. FIG. 5A shows the state of the power supply portion 200b electrically connected to the electrode 230 arranged below the substrate W when heat is input. FIG. 5(b) shows how the power supply unit 200b is heated. FIG. 5(c) shows how the power supply unit 200b is cooled. The power supply unit 200b is an example of the power supply unit 200, and the same effect can be obtained with the power supply unit 200a and the power supply unit 200c having the same configuration.

First, referring to FIG. 5A, the heat removal effect of the power supply unit 200 will be described, and then, referring to FIGS. do.

As shown in FIG. 5A, heat generated from the electrode 230 and heat input from the plasma pass through the substrate W and the electrostatic chuck 111 and are received by the first power supply terminal 201 of the power supply section 200b. The heat received by the first power supply terminal 201 can be released to the base 122 through the power supply line 203 and the second power supply terminal 202 and the adhesive 205 on the outer periphery of the second power supply terminal 202 .

As the adhesive 205, for example, a silicone-based, epoxy-based, or acrylic-based adhesive is used. The adhesive 205 has a thermal resistivity of, for example, 14K/W to 50K/W. As shown in FIG. 4, the inner diameter φ1 of the adhesive 205, that is, the outer diameter of the second power supply terminal 202 is 6 mm, and the outer diameter φ2 of the adhesive 205, that is, the inner diameter of the sleeve 204 is 9 mm.

As described above, in this embodiment, the adhesive 205 is filled between the base 122 and the entire outer periphery of the second power supply terminal 202 to ensure a contact area between the second power supply terminal 202 and the base 122. In addition, by using a material with low heat resistance for the adhesive 205, heat removal can be enhanced. By improving the heat removal property of the power supply unit 200, it is possible to prevent the power supply unit 200a from becoming a temperature singular point of the substrate W. FIG. Thereby, deterioration in the temperature uniformity of the substrate W can be prevented.

The lower the thermal resistivity of the adhesive 205 is, the better the heat conduction from the second power supply terminal 202 to the base 122 is. Therefore, in order to reduce the thermal resistance between the second power supply terminal 202 and the base 122, the thickness of the adhesive 205 is reduced or the length of application of the adhesive 205 is increased. Thereby, thermal resistance can be lowered. For example, by increasing the length of the cylindrical shape of the second power supply terminal 202 and increasing the surface area, the length of the adhesive 205 to be applied can be increased, and the thermal resistance can be reduced.

In addition to the heat removal effect described above, the power supply unit 200 according to the present embodiment suppresses the occurrence of shear, compression, and tension due to the flexibility of the power supply line 203 shown in FIGS. effect can be obtained. Next, this effect will be explained.

The power supply line 203 electrically connects the first power supply terminal 201 and the second power supply terminal 202 and has flexibility. The power supply line 203 is a stranded wire formed by twisting a plurality of conducting wires, is formed of a bendable flexible conductive material, and is deformable. The first power supply terminal 201 is connected to one end of the power supply line 203 on the surface opposite to the surface connected to the electrode 231 . The second power supply terminal 202 is connected to the other end of the power supply line 203 on the upper surface.

A space U in which the feeder line 203 exists is an atmospheric space. That is, the space U inside the through hole HL where the power supply line 203 exists between the first power supply terminal 201 and the second power supply terminal 202 is not filled with the adhesive.

Therefore, the power supply line 203 can be deformed in the space U between the first power supply terminal 201 and the second power supply terminal 202 as the temperature changes. Electric power supplied from the heater power supply 14 is supplied to the electrode 230 via the power supply line, the second power supply terminal 202 , the power supply line 203 and the first power supply terminal 201 . The electrode 230 generates heat due to the supplied power, and the power supply portion 200b and its surroundings are heated.

In addition, the power supply portion 200b and its surroundings are heated by the heat input from the plasma. The periphery of the power supply unit 200b is composed of materials having different linear expansion coefficients, such as the electrostatic chuck 111 made of ceramics and the base 122 made of aluminum.

For this reason, during the heating shown in FIG. 5B, the electrostatic chuck 111 has relatively smaller thermal expansion than the base 122, so that the first partial terminal 201a of the first power supply terminal 201 has an inner side. A force is applied in the shear direction indicated by the pointing arrow. On the other hand, since the thermal expansion of the base 122 is relatively larger than that of the electrostatic chuck 111, the second partial terminal 201b of the first power supply terminal 201 is subjected to a force in a shearing direction indicated by an arrow directed in the opposite direction to the outside. It takes

Therefore, force acts in the shear direction at the interface A between the first partial terminal 201a and the second partial terminal 201b, and stress is generated. When force acts in the shearing direction in this manner, peeling occurs at the interface A where the first partial terminal 201a and the second partial terminal 201b are brazed, and the electrical connection between the first power supply terminal 201 and the electrode 231 occurs. connection is lost.

During the cooling shown in FIG. 5C, due to the difference in linear expansion coefficient between the electrostatic chuck 111 and the base 122, the first partial terminal 201a is subjected to a force in the shearing direction indicated by the outward arrow, and the second partial terminal 201a A force is applied to the partial terminal 201b in a shearing direction indicated by an opposite inwardly directed arrow.

In contrast, according to the configuration of the power supply unit 200 according to the present embodiment, the flexibility of the power supply line 203 can absorb the difference in displacement between the electrostatic chuck 111 and the base 122 due to thermal expansion. In other words, the force in the shearing direction is not applied to the flexible power supply line 203 .

When the space U in which the power supply line 203 exists is filled with an adhesive, excessive thermal stress is generated in the power supply line 203 due to heat input from the plasma or the like, and the thermal stress applied to the first power supply terminal 201 is reduced. In some cases, the power cannot be absorbed, resulting in defective connection or breakage of the power supply unit 200 . However, in this embodiment, the power supply line 203 is flexible and the space U is not filled with adhesive. Therefore, the power supply line 203 absorbs the thermal stress by freely deforming according to the thermal stress. As a result, electrical connection failure and damage to the power supply unit 200 can be avoided.

[Modification]
A modified example of the power supply part 200 of the substrate support part according to one embodiment will be described with reference to FIG. 6, taking the power supply part 200a as an example. FIG. 6 is a diagram showing modified examples 1 to 3 of the power supply portion 200a of the substrate support portion according to the embodiment. FIG. 6A shows Modification 1 of the power supply unit 200a, FIG. 6B shows Modification 2 of the power supply unit 200a, and FIG. 6C shows Modification 3 of the power supply unit 200a.

Modification 1 of power feeder 200a shown in FIG. 6A has ring-shaped partition 206 that separates adhesive 205 from a region (space U) in which power feeder 203 is provided. The adhesive 205 and the partition 206 are an example of a heat transfer member provided between the second power supply terminal 202 and the base 122 .

The partition 206 fills the space U with the adhesive 205 when the adhesive 205 is filled between the second power supply terminal 202 and the sleeve 204 by reversing the paper surface of FIG. function as a stopper to avoid At the same time, the partition part 206 also has the purpose of fixing the position of the second power supply terminal 202 at a desired position. That is, first, the partition 206 is brought into contact with the stepped portion 204c of the sleeve 204, and the partition 206 is fixed with an adhesive. Next, the second power supply terminal 202 is fitted into the ring-shaped partition 206 to fix the position of the second power supply terminal 202 . After that, an adhesive 205 is poured between the second power supply terminal 202 and the sleeve 204 .

The partition part 206 is preferably made of an insulating material such as Poly Ether Ether Ketone (PEEK) that can withstand heat treatment at about 150.degree. C. to 200.degree. The partition part 206 may be made of insulating ceramics or resin.

In a modification 2 of the power supply portion 200a shown in FIG. 6B, a cylindrical body 207 made of metal or a highly heat conductive insulating member is inserted between the second power supply terminal 202 and the base 122. As shown in FIG. The cylindrical body 207 is an example of a heat transfer member provided between the second power supply terminal 202 and the base 122 . If the cylindrical body 207 is made of metal, it is preferably made of metal with high thermal conductivity such as copper or aluminum. If the cylindrical body 207 is a highly heat conductive insulating member, it is preferably made of a highly heat conductive insulator such as aluminum nitride.

Adhesives 205a and 205b are provided between the cylindrical body 207 and the second power supply terminal 202 and between the cylindrical body 207 and the sleeve 204, respectively. In modification 2, the adhesives 205a and 205b can be made thinner. As a result, the thermal resistance of the adhesive can be further reduced. In addition, thermal conductivity can be enhanced by forming the cylindrical body 207 from a metal or a highly heat-conductive insulating member. As a result, heat removal from the second power supply terminal 202 to the base 122 can be enhanced. In addition, in the power supply unit 200 according to Modification 2, the partition 206 of Modification 1 may be provided between the space U above the cylindrical body 207, or the partition 206 may be omitted.

In a modification 3 of the power supply unit 200a shown in FIG. 6C, a cylindrical body 208 having a coolant flow path 208a for cooling the inside of the through hole HL is provided between the second power supply terminal 202 and the base 122. . The cylindrical body 208 is an example of a heat transfer member provided between the second power supply terminal 202 and the base 122 and having a cooling mechanism for cooling the inside of the through-hole in the base.

The cylindrical body 208 has a configuration in which a space is provided inside the cylindrical body 207 of Modification 2, and may be formed of a metal such as aluminum or a highly heat-conductive insulating member such as aluminum nitride.

A supply line capable of circulating a refrigerant of a desired temperature supplied from the chiller unit 209 is connected to the refrigerant flow path 208a. As a result, the cooling medium circulating in the cooling medium flow path 208 a of the cylindrical body 208 can further enhance the heat extraction performance of the power supply unit 200 .

The coolant flow path 208a is an example of a cooling mechanism that cools the inside of the through hole HL inside the base 122 . Note that the refrigerant may be gas or liquid. The coolant may be circulated inside the space U from the coolant channel 208a. Also, the space U may be filled with liquid instead of air. A space may be provided inside the adhesive 205 and the space may be used as the coolant channel 208a. Instead of the adhesive 205 under the ring-shaped partition 206, the space under the partition 206 may be used as the coolant channel 208a.

As described above, according to the power supply unit 200 and the plasma processing apparatus 1 of the present embodiment, heat removal in the power supply unit 200 can be enhanced. Further, when thermal stress occurs due to the difference in coefficient of linear expansion between the electrostatic chuck 111 and the base 122, the flexibility of the power supply line 203 absorbs the deviation of each member. Therefore, the thermal stress applied to the first power supply terminal 201 can be absorbed, thereby preventing joint failure and breakage of the power supply section 200 .

The substrate supporting part and the plasma processing apparatus according to the embodiments disclosed this time should be considered as examples and not restrictive in all respects. Embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The items described in the above multiple embodiments can take other configurations within a consistent range, and can be combined within a consistent range.

The plasma processing apparatus of the present disclosure is an Atomic Layer Deposition (ALD) apparatus, Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), Helicon Wave Plasma (HWP) ) is applicable to any type of device.

1 plasma processing apparatus 2 control unit 10 plasma processing chamber 11 substrate support unit 13 shower head 21 gas source 20 gas supply unit 30 power supply 31 RF power supply 31a first RF generation unit 31b second RF generation unit 32a first DC generation Part 32b Second DC generation part 40 Exhaust system 111 Electrostatic chuck 112 Ring assembly 122 Base 200 Power supply part 201 First power supply terminal 202 Second power supply terminal 203 Power supply line 205 Adhesive 206 Partition part 207 Cylindrical body

Claims (8)

an electrostatic chuck on which the substrate is placed;
a base supporting the electrostatic chuck;
a first power supply terminal electrically connected to an electrode in the electrostatic chuck;
a second power supply terminal spaced apart from the first power supply terminal inside the through hole in the base;
a flexible power supply line electrically connecting the first power supply terminal and the second power supply terminal;
a heat transfer member provided between the second power supply terminal and the base;
A substrate support having a. An insulating sleeve is arranged on the inner wall of the through hole,
the sleeve and the second power supply terminal are in contact with each other through the heat transfer member;
The substrate support according to claim 1. The heat transfer member is an adhesive,
The substrate support part according to claim 1 or 2. The heat transfer member has a partition that separates the adhesive from the area where the power supply line is provided,
The substrate support part according to claim 1 or 2. The heat transfer member is a metal or a highly heat conductive insulating member,
The substrate support part according to claim 1 or 2. a through hole in the base between the first power supply terminal and the second power supply terminal is not filled with an adhesive;
A substrate support according to any one of claims 1-5. The heat transfer member has a cooling mechanism that cools the inside of the through hole in the base,
A substrate support according to any one of claims 1-6. an electrostatic chuck on which the substrate is placed;
a base supporting the electrostatic chuck;
a first power supply terminal electrically connected to an electrode in the electrostatic chuck;
a second power supply terminal spaced apart from the first power supply terminal inside the through hole in the base;
a flexible power supply line electrically connecting the first power supply terminal and the second power supply terminal;
a heat transfer member provided between the second power supply terminal and the base,
A plasma processing apparatus comprising a substrate support.

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