JP2023067767A - Substrate supporter, plasma processing device, and plasma processing method - Google Patents

Abstract

To regulate the temperature of a substrate supported by a substrate supporter suitably and keep electrostatic adsorption even in a high-temperature range.SOLUTION: A substrate supporter that supports a substrate includes a base, a first ceramic layer on the base, and a second ceramic layer on the first ceramic layer. The first ceramic layer includes a first base part made of a first ceramic, and a plurality of heater electrodes incorporated in the first base part and configured to regulate the temperature of the substrate. The second ceramic layer includes a second base part made of a second ceramic, which is different from the first ceramic, and an adsorption electrode incorporated in the second base part and configured to keep the substrate.SELECTED DRAWING: Figure 3

Description

The present disclosure relates to a substrate support, a plasma processing apparatus, and a plasma processing method.

In Patent Document 1, a plurality of sets of heaters and thyristors provided at least one set corresponding to each of a plurality of subdivided areas of an electrostatic chuck on which a substrate is placed, and the plurality of sets of thyristors to heaters are disclosed. a power supply that supplies current; and at least one set of filters that are provided in a power supply line that supplies power from the power supply to the plurality of heaters and that removes high-frequency power applied to the power supply. A control mechanism is disclosed.

JP 2015-084350 A

The technique according to the present disclosure appropriately adjusts the temperature of the substrate supported by the substrate supporter, and maintains electrostatic attraction even in a high temperature range.

One aspect of the present disclosure is a substrate support that supports a substrate, comprising a base, a first ceramic layer on the base, and a second ceramic layer on the first ceramic layer. wherein the first ceramic layer has a first base made of a first ceramic and a plurality of heater electrodes contained in the first base for adjusting the temperature of the substrate; The second ceramic layer has a second base made of a second ceramic different from the first ceramic, and an adsorption electrode included in the second base for holding the substrate.

According to the present disclosure, it is possible to appropriately adjust the temperature of the substrate supported by the substrate supporter and maintain electrostatic adsorption even in a high temperature range.

It is an explanatory view showing typically the outline of the composition of the plasma treatment system concerning this embodiment. It is a sectional view showing an example of composition of a plasma treatment apparatus concerning this embodiment. It is a sectional view showing an example of composition of a substrate supporter concerning this embodiment. FIG. 4 is a top plan view showing an example of the configuration of a plurality of regions of the first base according to the embodiment;

2. Description of the Related Art In a semiconductor device manufacturing process, a semiconductor substrate (hereinafter sometimes referred to as “substrate”) is placed on a substrate support and subjected to desired processing. The temperature of the substrate placed on the ceramic member constituting the substrate support surface of the substrate supporter is adjusted to an appropriate temperature according to the manufacturing process. Japanese Laid-Open Patent Publication No. 2002-100003 proposes a substrate supporter that includes a heater electrode together with an adsorption electrode in a ceramic member, and is configured to have both functions of fixing and supporting a substrate on the ceramic member and adjusting the temperature of the substrate and the like. ing. In particular, Patent Literature 1 discloses a configuration in which heater electrodes provided in a substrate support are subdivided so that the temperature of each of a plurality of regions can be locally controlled.

The substrate is fixedly supported by the ceramic member by applying a voltage to the substrate supporting surface by means of an attraction electrode incorporated in the ceramic member. When a voltage is applied to the substrate support surface by the attraction electrode, a potential difference is generated between the substrate support surface and the substrate polarized oppositely to the charge on the substrate support surface, generating an attraction force due to the Coulomb force. The ceramic member forming the substrate supporting surface is made of a ceramic, which is a dielectric. This is because it has an insulating property to insulate so that current does not flow between them. Regarding insulation, if a current flows between the substrate and the substrate supporting surface, the potential difference between the substrate and the substrate supporting surface decreases, and the attraction force decreases.

By the way, in recent years, plasma etching apparatuses are required to accurately etch films on substrates containing metals for use in next-generation semiconductor devices. In order to realize this, in the substrate supporter, the substrate can be adjusted to a high temperature range exceeding 200 ° C. (hereinafter simply referred to as a high temperature range), or It is required to be able to adjust locally. In the present disclosure, uniformly adjusting the temperature of the substrate means that there is no in-plane temperature difference in the entire area of the substrate, or the difference is negligibly small. Further, in the present disclosure, to locally adjust the temperature of the substrate means to adjust any part of the substrate to a desired temperature, and there is no or negligible temperature difference in the arbitrary part of the region. It means that the difference between is small.

The substrate support disclosed in Patent Document 1 makes it possible to uniformly or locally adjust the temperature in a conventional etching temperature range, that is, in a temperature range that does not reach 200 ° C., but it is assumed that the temperature can be adjusted to a high temperature range. However, it cannot be used in a high temperature range. Specifically, according to studies by the present inventors, when the temperature of the substrate supporter disclosed in Patent Document 1 is adjusted to a high temperature range, the volume resistance of the ceramic member constituting the substrate support surface decreases, and the insulating properties decrease. I found out. Further, it has been found that the ceramic member with deteriorated insulation cannot maintain the electrostatic attraction because the attraction force between the ceramic member and the substrate is lowered for the above-mentioned reason, and the substrate may be displaced. Therefore, there is a demand for a substrate support that can maintain electrostatic adsorption even in a high temperature range and can uniformly or locally adjust the in-plane temperature of the substrate.

Therefore, the technology according to the present disclosure is a substrate support capable of fixing and supporting a substrate by electrostatic attraction and controlling the temperature, maintaining the electrostatic attraction even in a high temperature range, and maintaining a uniform in-plane temperature of the substrate. or provide a substrate support capable of localized temperature control.

The configuration of the substrate processing apparatus according to this embodiment will be described below with reference to the drawings. In this specification, elements having substantially the same functional configuration are denoted by the same reference numerals, thereby omitting redundant description.

<Plasma processing system>
FIG. 1 is an explanatory diagram schematically showing the outline of the configuration of the plasma processing system according to this embodiment. In one embodiment, a plasma processing system includes a plasma processing apparatus 1 and a controller 2 . The plasma processing apparatus 1 includes a plasma processing chamber 10 , a substrate support section 11 and a plasma generation section 12 . Plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas inlet for supplying at least one process gas to the plasma processing space and at least one gas outlet for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply section 20, which will be described later, and the gas discharge port is connected to an exhaust system 40, which will be described later. The substrate support 11 is arranged in the plasma processing space and has a substrate support surface for supporting the substrate.

The plasma generator 12 is configured to generate plasma from at least one processing gas supplied within the plasma processing space. Plasma formed in the plasma processing space includes capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR plasma (Electron-Cyclotron-resonance plasma), helicon wave excited plasma (HWP: Helicon Wave Plasma), surface wave plasma (SWP: Surface Wave Plasma), or the like. Also, various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency within the range of 100 kHz to 10 GHz. Accordingly, AC signals include RF (Radio Frequency) signals and microwave signals. In one embodiment, the RF signal has a frequency within the range of 200 kHz-150 MHz.

Controller 2 processes computer-executable instructions that cause plasma processing apparatus 1 to perform the various steps described in this disclosure. Controller 2 may be configured to control elements of plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1 . The control unit 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. Processing unit 2a1 can be configured to perform various control operations based on programs stored in storage unit 2a2. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

<Plasma processing device>
Next, a configuration example of a capacitively-coupled plasma processing apparatus as an example of the plasma processing apparatus 1 will be described with reference to FIG. The plasma processing apparatus 1 includes a plasma processing chamber 10 , a gas supply section 20 , a power supply 30 and an exhaust system 40 . Further, the plasma processing apparatus 1 includes a substrate support section 11 and a gas introduction section. The gas introduction is configured to introduce at least one process gas into the plasma processing chamber 10 . The gas introduction section includes a showerhead 13 . A substrate support 11 is positioned within the plasma processing chamber 10 . The showerhead 13 is arranged above the substrate support 11 . In one embodiment, showerhead 13 forms at least a portion of the ceiling of plasma processing chamber 10 . The plasma processing chamber 10 has a plasma processing space 10 s defined by a showerhead 13 , side walls 10 a of the plasma processing chamber 10 and a substrate support 11 . Side wall 10a is grounded. The showerhead 13 and substrate support 11 are electrically insulated from the plasma processing chamber 10 housing.

Substrate support 11 includes substrate support 111 and ring assembly 112 . The substrate supporter 111 has a central region 111a for supporting the substrate (wafer) W and an annular region (ring support surface) 111b for supporting the ring assembly 112 . The annular region 111b of the substrate support 111 surrounds the central region 111a of the substrate support 111 in plan view. The substrate W is placed on the central region 111 a (substrate support surface 114 ) of the substrate support 111 , and the ring assembly 112 is placed on the annular region 111 b of the substrate support 111 so as to surround the substrate W on the substrate support surface 114 . placed. In one embodiment, substrate support 111 includes base 120 and electrostatic chuck 122 . Base 120 includes a conductive member 123 . A conductive member 123 of the base 120 functions as a lower electrode. The electrostatic chuck 122 is arranged on the base. The top surface of electrostatic chuck 122 has a substrate support surface 114 . Details of the configurations of the base 120 and the electrostatic chuck 122 will be described later. Ring assembly 112 includes one or more annular members. Also, the substrate supporter 11 may include a temperature control module configured to control at least one of the electrostatic chuck 122, the ring assembly 112, and the substrate W to a target temperature. The temperature control module may include heaters, heat transfer media, flow paths, or combinations thereof. A heat transfer fluid, such as brine or gas, flows through the channel. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas between the back surface of the substrate W and the substrate support surface 114 .

The showerhead 13 is configured to introduce at least one processing gas from the gas supply 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas introduction ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through a plurality of gas introduction ports 13c. Showerhead 13 also includes a conductive member. A conductive member of the showerhead 13 functions as an upper electrode. In addition to the showerhead 13, the gas introduction part may include one or more side gas injectors (SGI: Side Gas Injectors) attached to one or more openings formed in the side wall 10a.

Gas supply 20 may include at least one gas source 21 and at least one flow controller 22 . In one embodiment, gas supply 20 is configured to supply at least one process gas from respective gas sources 21 through respective flow controllers 22 to showerhead 13 . Each flow controller 22 may include, for example, a mass flow controller or a pressure controlled flow controller. Additionally, gas supply 20 may include at least one flow modulation device for modulating or pulsing the flow rate of at least one process gas.

Power supply 30 includes an RF power supply 31 coupled to plasma processing chamber 10 via at least one impedance match circuit. RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to conductive members of substrate support 11 and/or conductive members of showerhead 13 . be done. Thereby, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least part of the plasma generator 12 . Further, by supplying the bias RF signal to the conductive member of the substrate supporting portion 11, a bias potential is generated in the substrate W, and ion components in the formed plasma can be drawn into the substrate W. FIG.

In one embodiment, the RF power supply 31 includes a first RF generator 31a and a second RF generator 31b. The first RF generator 31a is coupled to the conductive member of the substrate support 11 and/or the conductive member of the showerhead 13 via at least one impedance matching circuit to provide a source RF signal for plasma generation (source RF electrical power). In one embodiment, the source RF signal has a frequency within the range of 13 MHz to 150 MHz. In one embodiment, the first RF generator 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are provided to conductive members of the substrate support 11 and/or conductive members of the showerhead 13 . The second RF generator 31b is coupled to the conductive member of the substrate support 11 via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In one embodiment, the bias RF signal has a frequency within the range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. One or more bias RF signals generated are provided to the conductive members of the substrate support 11 . Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

Power supply 30 may also include a DC power supply 32 coupled to plasma processing chamber 10 . The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to a conductive member of the substrate support 11 and configured to generate the first DC signal. The generated first DC signal is applied to the conductive member of substrate support 11 . In one embodiment, the first DC signal may be applied to other electrodes, such as electrodes within electrostatic chuck 122 . In one embodiment, the second DC generator 32b is connected to the conductive member of the showerhead 13 and configured to generate the second DC signal. The generated second DC signal is applied to the conductive members of showerhead 13 . In various embodiments, the first and second DC signals may be pulsed. Note that the first and second DC generators 32a and 32b may be provided in addition to the RF power supply 31, and the first DC generator 32a may be provided instead of the second RF generator 31b. good.

The exhaust system 40 may be connected to a gas outlet 10e provided at the bottom of the plasma processing chamber 10, for example. Exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. Vacuum pumps may include turbomolecular pumps, dry pumps, or combinations thereof.

<Substrate supporter>
Next, the details of the substrate supporter 111 according to this embodiment will be described. FIG. 3 is a cross-sectional view schematically showing the outline of the configuration of the substrate supporter 111 according to this embodiment. 3 shows a part of the central region 111a of the substrate supporter 111, and other parts of the central region 111a, the annular region 111b, and the bottom of the base 120 are omitted. However, other portions of the central region 111a and the annular region 111b are also assumed to have the same configuration as the illustrated portion.

In FIG. 3, substrate supporter 111 includes base 120 and electrostatic chuck 122 . The conductive member 123 of the base 120 is made of aluminum and has a cooling channel 124 inside the base 120 . The electrostatic chuck 122 has a first ceramic layer 126 provided on the base 120 and a second ceramic layer 128 provided on the first ceramic layer 126 . As the conductive member 123 of the base 120, an appropriate metal material other than aluminum can be used.

A first ceramic layer 126 rests on the base 120 . The mounting method is not particularly limited, and it can be fixed and mounted using known means. The first ceramic layer 126 includes a first base portion 130 that is a sintered body of the first ceramic, a plurality of heater electrodes 132 , and a multi-layered electrical electrode connected to the plurality of heater electrodes 132 . and wiring 134 . The first base portion 130 includes a plurality of heater electrodes 132, a multi-layered electric wiring 134 connected to the plurality of heater electrodes 132, and an electric wiring connected to the attraction electrode in a second ceramic layer 128, which will be described later. 144 and . In the present disclosure, the term "enclose" means, for example, when one configuration includes another configuration, not only the state in which the other configuration is embedded inside the one configuration and is not exposed to the outside, but also the one configuration. part of the other structure is embedded inside the structure of , and the other part of the other structure is exposed to the outside.

The second ceramic layer 128 is provided on the first ceramic layer 126, and in this embodiment is bonded to the first ceramic layer 126 via an inorganic adhesive layer 136. there is The second ceramic layer 128 also includes a second base 140 that is a second ceramic sintered body and an adsorption electrode 142 . The second base 140 is configured to enclose an attraction electrode 142 and an electrical wiring 144 connected to the attraction electrode 142 . An HV electrode can be used as the attraction electrode 142 in this embodiment, and by applying a DC voltage to it, electrostatic attraction can be performed between the substrate supporting surface 114 and the substrate W (not shown). Configured.

A multilayer electric wiring 134 connected to the heater electrode 132 and an electric wiring 144 connected to the attraction electrode 142 are connected to a power source (not shown) through the inside or outside of the base 120 . As such, the base 120 is configured to enclose the multilayer electrical traces 134 and the electrical traces 144 .

Here, an example of a method for manufacturing the electrostatic chuck 122 in the substrate supporter 111 configured as described above will be described below.

A green sheet method can be adopted as a method of manufacturing the first ceramic layer 126 . Specifically, it can be manufactured by laminating and sintering a plurality of green sheets made of the first ceramic that are fired separately. The green sheet is formed by forming a material containing ceramic as a main component into a sheet shape. By firing the green sheet, a ceramic layer can be formed as a multi-layer structure constituting the electrostatic chuck. As described above, since the first base portion 130 includes a plurality of heater electrodes 132 and multilayer electrical wiring 134 connected thereto, the green sheet method can be applied to the first ceramic layer 126 having such a complicated internal structure. is suitable for the production of Specifically, when a multilayer structure is formed by laminating a plurality of green sheets by the green sheet method, the plurality of green sheets can be laminated so as to have a heater electrode or an electric wiring between each layer. . Therefore, the first ceramic material is preferably a ceramic applicable to the green sheet method, and alumina is used in this embodiment.

A hot press method can be adopted as a method of manufacturing the second ceramic layer 128 . As the second ceramic material, high-purity alumina containing 99.95% or more of alumina in terms of mass percent concentration and having a porosity of 0.1% or less can be used. Here, the porosity is the ratio of the total area of all pores (voids) included in the observation field of view of the cross section to the area of the observation field of view of the cross section when the second ceramic layer 128 is observed in the cross section. is a value that indicates By using the Hot Press method on the high-purity alumina, a high volume resistance even in a high temperature range, specifically a volume resistance of 1 × 10 ¹⁶ Ω or more at room temperature or higher and 350 ° C. or lower, and a volume resistance of 10 or more and 11 or less A second ceramic layer 128 can be fabricated having a dielectric constant of

The first ceramic layer 126 and the second ceramic layer 128 manufactured as described above are joined via an adhesive layer 136 made of, for example, an inorganic adhesive. One of the reasons for using an inorganic adhesive is its low heat resistance. This is because heat is input from the heater electrode 132 of the first ceramic layer 126 to the second ceramic layer 128, so that the adhesive layer 136 provided therebetween preferably has low thermal resistance. In addition, the use of an inorganic adhesive is preferable because even when the adhesive layer 136 is exposed to plasma at the outer edge of the substrate supporter 111, the adhesive layer 136 is less likely to deteriorate.

Advantages of configuring the substrate supporter 111 according to the present embodiment as described above will be described below. As described above, in the conventional electrostatic chuck 122, the volume resistance of the ceramic member forming the substrate support surface 114 is lowered in a high temperature range, and current may flow between the substrate W and the ceramic member. In this case, the electrostatic attraction cannot be maintained, and the substrate W may be displaced from the desired position, which may adversely affect subsequent processes.

In order to maintain the electrostatic attraction between the substrate W and the substrate support surface 114 in a high temperature range, it is considered to use a ceramic member having a high volume resistance in a high temperature range to the extent that current does not flow between them. be done. A ceramic member having a high volume resistance in a high temperature range can be manufactured by using the Hot Press method for high-purity alumina as described above. On the other hand, it is preferable to manufacture the ceramic member in which the plurality of heater electrodes 132 are enclosed in the high-purity alumina by the green sheet method.

As a result of further investigation by the present inventors on this point, the first ceramic layer 126 including a plurality of heater electrodes 132 is manufactured by the green sheet method, and the second ceramic layer 126 including the adsorption electrodes 142 and having a high volume resistance in a high temperature range is manufactured. It has been found that it is possible to form the electrostatic chuck 122 that solves the above problems by manufacturing the ceramic layer 128 of 1 by a hot press method and bonding these two types of layers. That is, according to the electrostatic chuck 122 according to this embodiment, the first ceramic layer 126 including the plurality of heater electrodes 132 enables uniform or local temperature control in a high temperature range, and the attraction electrodes 142 The second ceramic layer 128, which has a high volume resistance in a high temperature range, makes it possible to maintain electrostatic adsorption in a high temperature range. In the case of joining different ceramic materials, if deformation occurs during heating or cooling, there is concern about deflection due to the difference in thermal expansion coefficients. On the other hand, in the electrostatic chuck 122 according to the present embodiment, both the first ceramic layer 126 and the second ceramic layer 128 are mainly made of alumina, so that the difference in thermal expansion coefficient between them is It can be kept small, and the above concern is eliminated.

According to the embodiment described above, the temperature of the plurality of heater electrodes 132 can be independently controlled by the multilayer electric wiring 134 . In addition, the first ceramic layer 126 including the plurality of heater electrodes 132 makes it possible to uniformly or locally control the temperature of the substrate W even in a high temperature range. The second ceramic layer 128 with high volume resistance provides the substrate supporter 111 capable of maintaining the electrostatic adsorption of the substrate W in a high temperature range.

In one embodiment, the first base 130 includes a plurality of regions 200 in plan view, and the plurality of heater electrodes 132 are arranged for each of the plurality of regions 200 . That is, one or more heater electrodes 132 are provided to correspond to one region 200 , and each heater electrode 132 adjusts the temperature of each of the corresponding regions 200 .

FIG. 4 is a top plan view of the first base 130 according to one embodiment, showing a preferred example of the number, shape and arrangement of the plurality of regions 200 in the first base 130 . In FIG. 4 , each area surrounded by solid lines is one area 200 . The first base 130 includes a plurality of regions 200 that are shaped and arranged to be rotationally symmetrical about the center of the first base 130 . In the example shown in FIG. 4, the plurality of regions 200 have 90 degree rotational symmetry about the center of the first base 130 . Specifically, the plurality of regions 200 includes a first region 200a provided at the center of the first base portion 130 and four regions provided on the outer peripheral side of the first region 200a. A second region 200b, eight third regions 200c located on the outer peripheral side of the second region 200b, and an outer peripheral side of the third region 200c, that is, on the outer periphery of the first base 130 It includes a fourth region 200d that is located and provided. A heater electrode 132 is provided so as to correspond to each of the plurality of regions 200 . In one embodiment, one region 200 is associated with a heater electrode 132 having a shape similar to the shape of one region 200 .

The first base 130 includes a plurality of regions 200 in a plan view, and a plurality of heater electrodes are arranged for each of the plurality of regions 200, thereby adjusting the temperature of each of the plurality of regions 200 by the plurality of heater electrodes. can be done. As a result, more efficient local temperature control becomes possible, and the in-plane temperature of the substrate W can be controlled more uniformly.

<Plasma treatment method>
Next, a plasma processing method using the plasma processing apparatus 1 having the substrate supporter 111 configured as described above will be described below. As plasma processing, for example, etching processing and film forming processing are performed.

First, the substrate W is loaded into the plasma processing chamber 10 and placed on the electrostatic chuck 122 . After that, by applying a DC voltage to the attraction electrode 142 of the electrostatic chuck 122, the substrate W is electrostatically attracted to the electrostatic chuck 122 by Coulomb force and held.

Next, some or all of the substrate W is adjusted to a desired temperature by any or all of the plurality of heater electrodes 132 of the first ceramic layer 126 . In addition, in the temperature adjustment, the temperature of a part or the entire area of the substrate W can be adjusted to a high temperature range. After loading the substrate W, the inside of the plasma processing chamber 10 is depressurized to a desired degree of vacuum by the exhaust system 40 .

Next, a processing gas is supplied from the gas supply unit 20 to the plasma processing space 10 s through the shower head 13 . Also, the first RF generator 31 a of the RF power supply 31 supplies the source RF power for plasma generation to the conductive member of the substrate support 11 and/or the conductive member of the shower head 13 . Then, the process gas is excited to generate plasma. At this time, a bias RF signal for attracting ions may be supplied from the second RF generator 31b. Then, the substrate W is subjected to plasma processing by the action of the generated plasma.

The above plasma processing method can be executed by controlling each component of the plasma processing apparatus 1 by the control unit 2 so as to execute desired steps.

According to the above plasma processing method, by placing the substrate W on the substrate supporter 111 configured as described above, the temperature of a part or the entire area of the substrate W can be adjusted and the high temperature can be obtained. Plasma treatment can be performed while maintaining the electrostatic adsorption even in the region. As a result, plasma processing of the substrate W in a high temperature range can be performed with high accuracy, and in particular, plasma processing of a film of the substrate W containing metal can be performed with high accuracy.

It should be considered that the embodiments disclosed this time are illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope of the appended claims, configuration examples within the technical scope of the present disclosure described later, and the gist thereof.

For example, the material and manufacturing method of the substrate supporter 111 are not limited to the above embodiments. That is, the first ceramic layer 126 is manufactured by the green sheet method using alumina as the first ceramic. 134 may be substituted or modified with known materials and manufacturing methods. The second ceramic layer 128 is manufactured by the hot press method using high-purity alumina as the second ceramic. It may be replaced or modified with known materials and manufacturing methods such that the volume resistance at high temperatures is high enough to maintain electrostatic attraction. In these cases, the combination is preferably such that the difference between the thermal expansion coefficients of the first ceramic layer 126 and the second ceramic layer 128 is 5 ppm or less when they are manufactured. If the difference in thermal expansion coefficient between the first ceramic layer 126 and the second ceramic layer 128 is 5 ppm or less, even if they are deformed by heating or cooling, they will be deformed at an identical degree of expansion or contraction. At least in the temperature range from room temperature to 400° C., it is possible to suppress the occurrence of bending or the like between them. Therefore, the first ceramic and the second ceramic may be made of the same ceramic as the main component.

In addition, in order for the second ceramic layer 128 to exhibit the effect of maintaining electrostatic adsorption in a high temperature range, it is necessary to have a volume resistance of 1×10 ¹⁶ Ω or more at the operating environment temperature (for example, room temperature or higher and 350° C. or lower). should be shown. In this case, the second ceramic may have a higher volume resistance than the first ceramic. In the above embodiment, high-purity alumina containing 99.95% or more alumina and having a porosity of 0.1% or less was used as the second ceramic. A ceramic material that can exhibit the above volume resistance at temperature can be applied. The second ceramic may be of higher purity than the first ceramic.

In addition, in the above embodiment, an inorganic adhesive is used as the adhesive layer 136 that joins the first ceramic layer 126 and the second ceramic layer 128, but the present invention is not limited to this. As an adhesive means applicable to the adhesive layer 136, for example, an organic adhesive can be used. In this case, it is preferable that the organic adhesive has at least low heat resistance and plasma resistance so as to reduce deterioration even when exposed to plasma. Also, it is possible to bond the first ceramic layer 126 and the second ceramic layer 128 by diffusion bonding, in which case the adhesive layer 136 may not be provided.

In the plasma processing method described above, the temperature is adjusted to a high temperature range. Further, the temperature may be adjusted to a higher temperature. Specifically, plasma processing may be performed by adjusting the temperature of a part or the entire area of the substrate W to 300° C. or higher.

Also, for example, the constituent elements of the above embodiments can be combined arbitrarily. From the arbitrary combination, the action and effect of each constituent element of the combination are obtained as a matter of course, and other actions and effects that are obvious to those skilled in the art from the description of this specification are obtained.

Also, the effects described herein are merely illustrative or exemplary, and are not limiting. In other words, the technology according to the present disclosure can produce other effects that are obvious to those skilled in the art from the description of this specification in addition to or instead of the above effects.

For example, the present disclosure includes the following embodiments.

(Appendix 1)
A substrate support for supporting a substrate,
a base;
a first ceramic layer on the base;
a second ceramic layer on the first ceramic layer;
The first ceramic layer is
a first ceramic first base;
a plurality of heater electrodes contained in the first base for adjusting the temperature of the substrate;
The second ceramic layer is
a second base made of a second ceramic different from the first ceramic;
a suction electrode contained in the second base for holding the substrate.

(Appendix 2)
the first base includes a plurality of regions;
The substrate support according to Appendix 1, wherein the plurality of heater electrodes are arranged for each of the plurality of regions.

(Appendix 3)
3. The substrate support according to appendix 1 or appendix 2, wherein the first ceramic layer includes a plurality of multi-layer electrical wirings enclosed in the first base and connected to the plurality of heater electrodes, respectively.

(Appendix 4)
The first base is a multilayer structure in which a plurality of ceramic layers are laminated,
at least one heater electrode between each of the plurality of ceramic layers;
A substrate support according to any one of Appendices 1 to 3.

(Appendix 5)
5. The substrate support according to appendix 4, wherein the plurality of ceramic layers are sintered compacts of a plurality of green sheets.

(Appendix 6)
The substrate support according to any one of Appendices 1 to 5, wherein the second base is a second ceramic sintered body.

(Appendix 7)
7. The substrate support according to any one of Appendices 1 to 6, wherein the second ceramic has a higher volume resistance than the first ceramic.

(Appendix 8)
The substrate support according to any one of Appendices 1 to 7, further comprising a bonding layer containing an inorganic adhesive between the first ceramic layer and the second ceramic layer.

(Appendix 9)
The substrate support according to any one of Appendices 1 to 8, wherein the first ceramic and the second ceramic are mainly composed of the same ceramic.

(Appendix 10)
10. The substrate support according to any one of appendices 1 to 9, wherein the second ceramic has a higher purity than the first ceramic.

(Appendix 11)
11. The substrate support according to any one of appendices 1 to 10, wherein the second base has a volume resistance of 1×10 ¹⁶ Ω or more at room temperature or higher and 350° C. or lower.

(Appendix 12)
12. The substrate support according to any one of appendices 1 to 11, wherein the second ceramic contains alumina at a mass percent concentration of 99.95% or more.

(Appendix 13)
13. The substrate support according to any one of appendices 1 to 12, wherein the dielectric constant of the second ceramic is 10 or more and 11 or less.

(Appendix 14)
14. The substrate support according to any one of appendices 1 to 13, wherein the difference between the coefficient of thermal expansion of the first base and the coefficient of thermal expansion of the second base is 5 ppm or less.

(Appendix 15)
15. The substrate support according to any one of appendices 1 to 14, wherein the second ceramic has a porosity of 0.1% or less.

(Appendix 16)
A plasma processing apparatus for processing a substrate,
a chamber;
a substrate support that supports the substrate inside the chamber;
The substrate supporter
a base;
a first ceramic layer on the base;
a second ceramic layer on the first ceramic layer;
The first ceramic layer is
a first ceramic first base;
a plurality of heater electrodes contained in the first base for adjusting the temperature of the substrate;
The second ceramic layer is
a second base made of a second ceramic different from the first ceramic;
a suction electrode contained in the second base for holding the substrate.

(Appendix 17)
the first base includes a plurality of regions;
17. The plasma processing apparatus according to appendix 16, wherein the plurality of heater electrodes are arranged for each of the plurality of regions.

(Appendix 18)
18. The plasma processing apparatus according to appendix 16 or appendix 17, wherein the first ceramic layer includes a plurality of multilayer electric wirings enclosed in the first base and connected to the plurality of heater electrodes, respectively.

(Appendix 19)
comprising at least one power source connected to the plurality of heater electrodes via the plurality of multilayer electrical wirings;
19. The plasma processing apparatus according to appendix 18, wherein the plurality of heater electrodes are configured to be independently temperature controllable.

(Appendix 20)
A plasma processing method for processing a substrate using a plasma processing apparatus,
The plasma processing apparatus is
a chamber, and a substrate support provided inside the chamber for supporting a substrate,
The substrate supporter
a base;
a first ceramic layer on the base;
a second ceramic layer on the first ceramic layer;
The first ceramic layer is
a first ceramic first base;
a plurality of heater electrodes contained in the first base for adjusting the temperature of the substrate;
The second ceramic layer is
a second base made of a second ceramic different from the first ceramic;
a suction electrode included in the second base for holding the substrate;
The plasma processing method includes
placing the substrate on a substrate support surface of the substrate support;
a step of attracting and holding the substrate on the substrate support surface using the attraction electrode;
a step of applying heat to the second ceramic layer and the substrate using any one or all of the plurality of heater electrodes to adjust the temperature of a part or the entire area of the substrate to 300° C. or higher; ,
and a step of treating with plasma a partial region or the entire region of the temperature-controlled substrate.

111 Substrate Supporter 120 Base 122 Electrostatic Chuck 126 First Ceramic Layer 128 Second Ceramic Layer 130 First Base 132 Heater Electrode 140 Second Base 142 Adsorption Electrode W Substrate

Claims (20)

A substrate support for supporting a substrate,
a base;
a first ceramic layer on the base;
a second ceramic layer on the first ceramic layer;
The first ceramic layer is
a first ceramic first base;
a plurality of heater electrodes contained in the first base for adjusting the temperature of the substrate;
The second ceramic layer is
a second base made of a second ceramic different from the first ceramic;
a suction electrode contained in the second base for holding the substrate. the first base includes a plurality of regions;
2. The substrate support according to claim 1, wherein said plurality of heater electrodes are arranged for each of said plurality of regions. 3. The substrate support according to claim 1, wherein said first ceramic layer includes a plurality of multi-layer electrical wirings enclosed in said first base portion and respectively connected to said plurality of heater electrodes. The first base is a multilayer structure in which a plurality of ceramic layers are laminated,
at least one heater electrode between each of the plurality of ceramic layers;
A substrate support according to claim 1. 5. The substrate support of claim 4, wherein the plurality of ceramic layers are sintered compacts of a plurality of green sheets. 3. The substrate support according to claim 1, wherein said second base is a second ceramic sintered body. 3. The substrate support according to claim 1, wherein said second ceramic has a higher volume resistivity than said first ceramic. 3. The substrate support according to claim 1, further comprising a bonding layer containing an inorganic adhesive between said first ceramic layer and said second ceramic layer. 3. The substrate support according to claim 1, wherein said first ceramic and said second ceramic are mainly composed of the same ceramic. 3. The substrate support according to claim 1 or 2, wherein said second ceramic is of higher purity than said first ceramic. 3. The substrate support according to claim 1, wherein said second base has a volume resistance of 1×10 ¹⁶ Ω or more at room temperature or higher and 350° C. or lower. 3. The substrate support according to claim 1, wherein said second ceramic contains alumina at a mass percent concentration of 99.95% or more. 3. The substrate support according to claim 1, wherein said second ceramic has a dielectric constant of 10 or more and 11 or less. 3. The substrate support according to claim 1, wherein the difference between the coefficient of thermal expansion of said first base and the coefficient of thermal expansion of said second base is 5 ppm or less. 3. The substrate support according to claim 1, wherein said second ceramic has a porosity of 0.1% or less. A plasma processing apparatus for processing a substrate,
a chamber;
a substrate support that supports the substrate inside the chamber;
The substrate supporter
a base;
a first ceramic layer on the base;
a second ceramic layer on the first ceramic layer;
The first ceramic layer is
a first ceramic first base;
a plurality of heater electrodes contained in the first base for adjusting the temperature of the substrate;
The second ceramic layer is
a second base made of a second ceramic different from the first ceramic;
a suction electrode contained in the second base for holding the substrate. the first base includes a plurality of regions;
17. The plasma processing apparatus according to claim 16, wherein said plurality of heater electrodes are arranged for each of said plurality of regions. 18. The plasma processing apparatus according to claim 16, wherein said first ceramic layer includes a plurality of multi-layer electrical wirings enclosed in said first base and connected to said plurality of heater electrodes respectively. comprising at least one power source connected to the plurality of heater electrodes via the plurality of multilayer electrical wirings;
19. The plasma processing apparatus according to claim 18, wherein said plurality of heater electrodes are configured to be independently temperature controllable. A plasma processing method for processing a substrate using a plasma processing apparatus,
The plasma processing apparatus is
a chamber, and a substrate support provided inside the chamber for supporting a substrate,
The substrate supporter
a base;
a first ceramic layer on the base;
a second ceramic layer on the first ceramic layer;
The first ceramic layer is
a first ceramic first base;
a plurality of heater electrodes contained in the first base for adjusting the temperature of the substrate;
The second ceramic layer is
a second base made of a second ceramic different from the first ceramic;
a suction electrode included in the second base for holding the substrate;
The plasma processing method includes
placing the substrate on a substrate support surface of the substrate support;
a step of attracting and holding the substrate on the substrate support surface using the attraction electrode;
a step of applying heat to the second ceramic layer and the substrate using any one or all of the plurality of heater electrodes to adjust the temperature of a part or the entire area of the substrate to 300° C. or higher; ,
and a step of treating with plasma a partial region or the entire region of the temperature-controlled substrate.

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