JP2022115785A - non-reciprocal circuit element - Google Patents

Abstract

To provide a non-reciprocal circuit element used in a 3 GHz to 6 GHz band.SOLUTION: A non-reciprocal circuit element includes a ferrimagnetic material 3 having a main surface, a plurality of central conductors 4, 5, 6 arranged in a state insulated from each other on the main surface of the ferrimagnetic material, and a laminated magnet 2 in which a ferrite magnet 2B containing Sr and a rare earth magnet 2A containing Sm are laminated, and that is arranged facing the plurality of central conductors, and the composite temperature coefficient of residual magnetic flux density of the laminated magnet is -0.14%/°C or more and -0.06%/°C or less. The ferrimagnetic material has a saturation magnetic flux density of 40 mT or more and 80 mT or less, a temperature coefficient of the saturation magnetic flux density is -0.45%/°C or more and -0.25%/°C or less, and a low ferromagnetic resonance half-value width (ΔH<2500 A/m) is preferable.SELECTED DRAWING: Figure 1

Description

The present application relates to non-reciprocal circuit devices.

Nonreciprocal circuit elements include isolators, circulators, and the like, and are used in transmission/reception circuits of devices such as mobile phones and their base stations. Non-reciprocal circuit elements are used to prevent damage to amplifiers and to obtain stable output power with high linearity, and function to reduce insertion loss in the signal transmission direction and increase transmission loss in the reverse direction. It has For example, Patent Literature 1 discloses a non-reciprocal circuit element that can be miniaturized.

Japanese Patent Application Laid-Open No. 2001-267810

With the progress of information and communication technology, there is a demand for the transmission of larger amounts of information, and the frequency of electromagnetic waves used in information communication networks such as mobile phone communication has a high frequency band that can transmit large amounts of information. used. Specifically, a non-reciprocal circuit element compatible with frequencies in the 3 GHz to 6 GHz band called the Sub-6 frequency band is desired.

An object of the present disclosure is to provide a non-reciprocal circuit element suitable for the 3 GHz to 6 GHz band.

A nonreciprocal circuit device according to an embodiment of the present disclosure includes a ferrimagnetic material having a main surface, a plurality of central conductors arranged in a mutually insulated state on the main surface of the ferrimagnetic material, and a ferrite containing Sr. A laminated magnet in which a magnet and a rare earth magnet containing Sm are laminated, the laminated magnet being disposed facing the plurality of central conductors, wherein the composite temperature coefficient of the residual magnetic flux density of the laminated magnet is − It is 0.14%/°C or higher and -0.06%/°C or lower.

The ferrimagnetic material may have a saturation magnetic flux density of 40 mT or more and 80 mT or less, and a temperature coefficient of the saturation magnetic flux density of −0.45%/° C. or more and −0.25%/° C. or less.

A ratio of the thickness of the rare earth magnet to the total thickness of the ferrite magnet and the rare earth magnet may be 1/4 or more and 3/4 or less.

In the laminated magnet, the ferrite magnet may be closer to the plurality of central conductors than the rare earth magnet.

A composite temperature coefficient of residual magnetic flux density of the laminated magnet may be -0.12%/°C or more and -0.08%/°C or less.

In the frequency characteristics of the insertion loss of the nonreciprocal circuit element, the resonance frequency of the main band and the attenuation pole closest to the resonance frequency are separated by 200 MHz or more in a temperature range of -40°C to 125°C. good too.

Embodiments of the present disclosure provide non-reciprocal circuit devices suitable for the 3 GHz to 6 GHz band.

FIG. 1 is an exploded perspective view showing one form of the non-reciprocal circuit device of this embodiment. FIG. 2 shows the applied magnetic field intensity to the ferrimagnetic material of the laminated magnet in the temperature range of 5° C. to 125° C. FIG. 3A shows frequency characteristics of VSWR and insertion loss of the non-reciprocal circuit device of Example 1. FIG. FIG. 3B shows the frequency characteristics of the attenuation of the non-reciprocal circuit element of Example 1. FIG. 4A shows frequency characteristics of VSWR and insertion loss of the non-reciprocal circuit element of Comparative Example 1. FIG. 4B shows the frequency characteristics of the attenuation of the non-reciprocal circuit element of Comparative Example 1. FIG. 5A shows frequency characteristics of VSWR and insertion loss of the non-reciprocal circuit element of Comparative Example 2. FIG. FIG. 5B shows the frequency characteristics of the attenuation of the non-reciprocal circuit element of Comparative Example 2. FIG. FIG. 6A shows frequency characteristics of input-side VSWR and insertion loss of the non-reciprocal circuit element of Example 2. FIG. FIG. 6B shows frequency characteristics of output-side VSWR and isolation of the non-reciprocal circuit element of Example 2. FIG. 7A shows frequency characteristics of input-side VSWR and insertion loss of the non-reciprocal circuit element of Comparative Example 3. FIG. FIG. 7B shows frequency characteristics of output-side VSWR and isolation of the non-reciprocal circuit element of Comparative Example 3. FIG.

FIG. 1 is an exploded perspective view of a non-reciprocal circuit device 30 of this embodiment. The non-reciprocal circuit element 30 is suitable for frequencies in the 3 GHz to 6 GHz band, for example, and is used in the transmitting/receiving circuits of mobile phones and mobile phone base stations. The nonreciprocal circuit element 30 has an external size of, for example, about 5 mm long, 5 mm wide, and 2.5 to 4 mm high, and the nonreciprocal circuit element 30 is a lumped constant nonreciprocal circuit element.

The nonreciprocal circuit element 30 includes a ferrimagnetic body 3 , multiple central conductors, and a laminated magnet 2 .

The ferrimagnetic body 3 has, for example, a disc shape having a main surface 3a. For example, the diameter of the main surface 3a is about 1.5 mm or more and 2.5 mm or less. The ferrimagnetic material 3 preferably has a low saturation magnetic flux density of, for example, 40 mT or more and 80 mT or less and a low ferromagnetic resonance half width (ΔH<2500 A/m). The temperature coefficient (temperature dependence) of the saturation magnetic flux density is preferably -0.45%/°C or more and -0.25%/°C or less. Further, the saturation magnetic flux density is preferably 40 mT or more and 70 mT or less, and the low ferromagnetic resonance half width is preferably ΔH<2000 A/m). The temperature coefficient (temperature dependence) of the saturation magnetic flux density is more preferably -0.4%/°C or more and -0.3%/°C or less. The ferrimagnetic material 3 is made of, for example, a ferrimagnetic compound such as yttrium iron garnet (YIG).

The plurality of central conductors are electrically insulated from each other and arranged on the main surface 3a of the ferrimagnetic body 3 in a state of being overlapped so as to cross each other. In this embodiment, the central conductors 4, 5, 6 are arranged at an angle of 120°. The ferrimagnetic material 3 and the central conductors 4, 5, 6 constitute an assembly 20. As shown in FIG.

Laminated magnet 2 includes rare earth magnet 2A and ferrite magnet 2B. The rare earth magnet 2A contains Sm. Also, ferrite magnets contain Sr. The rare-earth magnet 2A has a plate shape having a principal surface 2An and a principal surface 2As, with the north pole located on the principal surface 2An side and the south pole located on the principal surface 2As side. Similarly, the ferrite magnet 2B has a plate shape having a principal surface 2Bn and a principal surface 2Bs, with the north pole located on the principal surface 2Bn side and the south pole located on the principal surface 2Bs side.

As shown in FIG. 1, the rare earth magnet 2A and the ferrite magnet 2B are laminated such that the main surface 2An of the rare earth magnet 2A faces the main surface 2Bs of the ferrite magnet 2B. Rare earth magnet 2A and ferrite magnet 2B may be laminated so as to be close to each other, and rare earth magnet 2A and ferrite magnet 2B may be adhered with an adhesive or the like. The laminated magnet 2 is arranged with respect to the assembly 20 so that the main surface 2Bn of the ferrite magnet 2B faces the central conductors 4, 5, and 6. As shown in FIG.

The directions of the magnetic fields formed by the rare earth magnet 2A and the ferrite magnet 2B are the same, and the laminated magnet 2 forms an integrated magnetic field. The laminated magnet 2 applies a magnetic field perpendicularly to the main surface 3 a of the ferrimagnetic material of the assembly 20 .

The rare earth magnet 2A is specifically SmCo ₅ (1-5 system), Sm ₂ Co ₁₇ (2-17 system), Sm--Fe--N system magnets, or the like. The ferrite magnet 2B is an SrO.Fe ₂ O ₃ magnet or the like. Table 1 shows the residual magnetic flux density and the temperature coefficient of the residual magnetic flux density of the rare earth magnet 2A and the ferrite magnet 2B.

The residual magnetic flux density of the entire laminated magnet 2 is preferably about 0.55 T or more and about 1.0 T or less. Further, the temperature coefficient of the residual magnetic flux density of the entire laminated magnet 2 is preferably -0.14%/°C or more and -0.06%/°C or less, and -0.12%/°C or more and -0.08%. /° C. or less is more preferable. The temperature dependence of the residual magnetic flux density of the entire laminated magnet 2 is hereinafter referred to as a composite temperature coefficient.

The residual magnetic flux density (T) value and composite temperature coefficient (%/°C) value of the entire laminated magnet 2 are adjusted by changing the materials of the rare earth magnet 2A and the ferrite magnet 2B and the thickness ratio of each magnet. be able to. For example, when the thickness of the rare earth magnet 2A is Tr and the thickness of the ferrite magnet 2B is Tf, the thickness (Tr) of the rare earth magnet 2A with respect to the total thickness (Tr+Tf) of the rare earth magnet 2A and the ferrite magnet 2B is By adjusting the ratio between 1/4 and 3/4, the composite temperature coefficient described above can be achieved.

More specifically, for example, by forming the laminated magnet 2 with the thickness ratios shown in Table 2, the composite temperature coefficient described above can be achieved. In Table 2, Sm ₂ Co ₁₇ with a temperature coefficient of −0.04 to −0.02%/° C. is used as the rare earth magnet 2A, and a temperature coefficient of −0.20 to −0.18% is used as the ferrite magnet 2B. /°C of SrO.Fe ₂ O ₃ was used. The outer size of the laminated magnet 2 is about 3 to 5 mm in length, 3 to 5 mm in width, and 0.8 to 1.2 mm in height when the usage band is 3.6 GHz to 4.0 GHz, for example. When the used band is 4.8 GHz to 5.0 GHz, the length is about 3 to 5 mm, the width is about 3 to 5 mm, and the height is about 0.8 to 2.2 mm.

FIG. 2 shows the magnetic field strength applied to the ferrimagnetic material by the laminated magnet 2 in the temperature range of 5° C. to 125° C. FIG. Experimental results show that the composite temperature coefficient of the residual magnetic flux density Br of this laminated magnet has a strong correlation with the temperature change rate of the applied magnetic field intensity. Therefore, in FIG. 2, the composite temperature coefficient of the residual magnetic flux density Br is converted into the temperature change rate of the magnetic field intensity applied to the ferrimagnetic material and displayed.

For example, when Sm ₂ Co ₁₇ is used as the rare earth magnet 2A and SrO.Fe ₂ O ₃ is used as the ferrite magnet 2B, as described above, the temperature of the residual magnetic flux density that can be achieved by adjusting the thickness Show change. Thus, the laminated magnet 2 has a residual magnetic flux density value (0.55 T or more) that cannot be obtained with the ferrite magnet SrO.Fe ₂ O ₃ alone, and a residual magnetic flux with a value that cannot be obtained with the rare earth magnet Sm ₂ Co ₁₇ alone. It has a composite temperature coefficient of density (-0.14%/°C or higher, -0.06%/°C or lower).

The non-reciprocal circuit element 30 further includes capacitive elements 8 , 9 and 10 such as plate capacitors, a resistive element 11 and a resin case 7 . The resin case 7 has a recess 13a, and the assembly 20 is arranged in the recess 13a. The capacitive elements 8, 9, 10 and the resistive element 11 are arranged in recesses 13b, 13c, 13d provided in the resin case 7, and one end is connected to any one of the central conductors 4, 5, 6 and the external portion provided in the resin case 7. The terminals are electrically connected, and the other end is grounded to the bottom surface of the recess 13 a provided in the resin case 7 . The nonreciprocal circuit element 30 further includes an upper case 1 and a lower case 12 , and the upper case 1 and the lower case 12 are arranged above and below the resin case 7 to cover the resin case 7 .

Next, referring to FIG. 2 and Table 3, the magnetic properties of the laminated magnet 2 of the non-reciprocal circuit element 30 will be described.

As shown in Table 3, the conventional non-reciprocal circuit element with a usage band of 700 MHz or more and 2.6 GHz or less makes the temperature coefficient of the saturation magnetic flux density of the ferrimagnetic material approximately equal to the combined temperature coefficient of the residual magnetic flux density of the magnet. As a result, the high-frequency characteristics of the non-reciprocal circuit device, specifically, VSWR (voltage standing wave ratio), reverse loss and It has been designed so that the frequency characteristics of insertion loss do not fluctuate greatly.

The inventors of the present application have studied in detail the design of non-reciprocal circuit elements used in the 3-6 GHz band. As a result, in such a high frequency band, the resonance peak of the main band characteristic of the LC resonance circuit formed by the central conductor and the capacitive element is less likely to be caused by the magnetic resonance generated when a DC magnetic field is applied to the ferrimagnetic material. It was found that the absorption characteristic responds more sensitively to the magnetic field strength. For this reason, when the applied magnetic field decreases under high temperature conditions, the attenuation pole of magnetic resonance shifts significantly to the low frequency side, and the attenuation pole overlaps with the main band. It was found that the linearity deteriorated and it became difficult to satisfy the IMD (intermodulation distortion) standard (for example, -50 dBc max).

In the non-reciprocal circuit device according to the embodiment of the present application, considering the temperature dependence of the resonance peak of the main band characteristic of the LC resonance circuit and the temperature dependence of the attenuation pole of magnetic resonance, It is designed differently from conventional non-reciprocal circuit elements so that the attenuation pole of magnetic resonance does not overlap with the main band of the LC resonance circuit in the temperature range. Specifically, the saturation magnetic flux density of the ferrimagnetic material 3 is set to 40 mT or more and 80 mT or less, which is smaller than the value used in conventional non-reciprocal circuit devices. In addition, the temperature coefficient of the saturation magnetic flux density of the ferrimagnetic material 3 is set to −0.4%/° C. or more and −0.3%/° C. or less, which is smaller than the conventional one. On the other hand, by using the laminated magnet 2, the composite temperature coefficient of residual magnetic flux density can be set to −0.14%/° C. or more and −0.06%/° C. or less, which is difficult to obtain with a single Sm ₂ Co ₁₇ magnet. ing. That is, the gradient of the combined temperature coefficient of the residual magnetic flux density of the laminated magnet 2 is less than half that of the temperature coefficient of the saturated magnetic flux density of the ferrimagnetic material 3 . As described in the following experimental results, in the frequency characteristics of the insertion loss of the nonreciprocal circuit element 30, the resonance frequency of the main band and the attenuation pole closest to the resonance frequency In the temperature range of 125° C., it becomes possible to separate by 200 MHz or more. Also, the non-reciprocal circuit element 30 can satisfy the required characteristics of IMD and the like.

Patent Document 1 discloses that a low-profile nonreciprocal circuit element is realized by reducing the thickness of the permanent magnet of the nonreciprocal circuit element. In order to reduce the thickness of the permanent magnet, a rare earth magnet with a higher residual magnetic flux density than the Sr ferrite magnet is used. Since the temperature characteristic of the residual magnetic flux density of the rare earth magnet is flat, the Sr ferrite magnet is replaced with a rare earth magnet. In this case, it is described that the temperature characteristic of the saturation magnetic flux density of the ferrimagnetic material cannot be eliminated. For this reason, Patent Document 1 discloses using an Sr ferrite magnet and an Nd--Fe--B magnet in combination. Patent Document 1 discloses the use of two permanent magnets, but the temperature characteristics of the residual magnetic flux density obtained by the two permanent magnets are about the same as the temperature characteristics of the saturation magnetic flux density of the ferrimagnetic material. is required.

On the other hand, in the non-reciprocal circuit element 30 of the present embodiment, the temperature coefficient of the saturation magnetic flux density of the ferrimagnetic material 3 is made smaller than the temperature coefficient of the saturation magnetic flux density of the ferrimagnetic material of the conventional non-reciprocal circuit element. , the composite temperature coefficient of the residual magnetic flux density of the laminated magnet 2 is made larger than the temperature coefficient of the residual magnetic flux density of the permanent magnets of the conventional non-reciprocal circuit element. That is, the temperature coefficient of the saturation magnetic flux density of the ferrimagnetic material 3 and the combined temperature coefficient of the residual magnetic flux density of the laminated magnet 2 are set based on an idea different from the conventional one.

According to the non-reciprocal circuit device of the present embodiment, by providing the laminated magnet in which the ferrite magnet containing Sr and the rare earth magnet containing Sm are laminated, the composite temperature coefficient of the residual magnetic flux density is reduced to -0.14%/°C. It can be set to above -0.06%/°C or below. Therefore, it is possible to realize a non-reciprocal circuit device having excellent high frequency characteristics and temperature characteristics in the band of 3 to 6 GHz.

Experimental results of the high-frequency characteristics and temperature characteristics of the non-reciprocal circuit device of this embodiment will be described below.

FIG. 3A shows the frequency characteristics of VSWR and insertion loss of Example 1, which is the non-reciprocal circuit element of this embodiment whose operating band is from 4.8 GHz to 5.0 GHz (4.9 GHz band). FIG. 3B shows the frequency characteristics of attenuation with an enlarged frequency range. As the laminated magnet 2, a rare earth magnet 2A made of Sm ₂ Co ₁₇ and a ferrite magnet 2B made of SrO.Fe ₂ O ₃ with a thickness ratio of 1:1 were used. The residual magnetic flux density is 0.7 to 0.8 T, and the temperature coefficient of the residual magnetic flux density is -0.12%/°C or higher and -0.08%/°C or lower.

In FIGS. 3A and 3B, frequency characteristics obtained at temperatures of −40, 25, 85, 105, 115 and 125° C. are superimposed. The frequency characteristics shift as the temperature rises or falls. However, as shown in FIG. 3A, the VSWR and the insertion loss maintain sufficiently low values in the range of -40° C. to 125° C., indicating good frequency characteristics. Further, as shown in FIG. 3B, as the operating temperature rises, the attenuation pole A of magnetic resonance shifts so as to approach the resonance peak P of the main band. P and the attenuation pole A of the magnetic resonance are separated by 200 MHz or more, and the effect on main band resonance characteristics is small.

4A shows frequency characteristics of VSWR and insertion loss of Comparative Example 1, which is a nonreciprocal circuit element using a rare earth magnet made of Sm ₂ Co ₁₇ instead of the laminated magnet 2 in the nonreciprocal circuit element of Example 1. FIG. show. FIG. 4B shows the frequency characteristics of attenuation with an enlarged frequency range. A rare earth magnet made of Sm ₂ Co ₁₇ has a residual magnetic flux density of 0.9 to 1.2 T and a temperature coefficient of residual magnetic flux density of −0.04 to −0.02%/°C.

As shown in FIG. 4A, as the operating temperature increases, the VSWR and insertion loss increase at the lower end of the operating band. On the other hand, as shown in FIG. 4B, even if the operating temperature rises or falls, the attenuation pole A of magnetic resonance is separated from the resonance peak P of the main band by 500 MHz or more. Therefore, in Comparative Example 1, although the attenuation pole A of magnetic resonance can be well controlled, the VSWR and the insertion loss worsen especially at the lower end of the usage band when the temperature rises.

FIG. 5A shows VSWR and insertion loss frequency of Comparative Example 2, which is a nonreciprocal circuit device using a ferrite magnet made of SrO.Fe ₂ O ₃ instead of the laminated magnet 2 in the nonreciprocal circuit device of Example 1. characterize. FIG. 5B shows the frequency characteristics of attenuation with an enlarged frequency range. A ferrite magnet made of SrO.Fe ₂ O ₃ has a residual magnetic flux density of 0.33 to 0.45 T and a temperature coefficient of residual magnetic flux density of -0.20 to -0.18%/°C.

As shown in FIG. 5A, VSWR and insertion loss increase over the entire operating band as the operating temperature increases. Further, as shown in FIG. 5B, the attenuation pole A of magnetic resonance approaches the resonance peak P of the main band as the operating temperature rises, and at 125° C., the distance from the resonance peak P is only about 150 MHz. Therefore, in Comparative Example 2, as the temperature rises, the VSWR and the insertion loss worsen over the entire operating band, and the resonance peak P is affected by the attenuation pole A of magnetic resonance.

FIG. 6A shows the frequency characteristics of VSWR and insertion loss on the input side of Example 2, which is the non-reciprocal circuit element of the present embodiment whose operating band is from 3.4 GHz to 3.8 GHz (3.6 GHz band). FIG. 6B similarly shows frequency characteristics of VSWR and isolation on the output side. The laminated magnet 2 is the same as in the first embodiment. As shown in FIGS. 6A and 6B, the input side VSWR, output side VSWR, insertion loss and isolation all maintain sufficiently good values in the temperature range from -40°C to 125°C. It can be seen that good frequency characteristics are obtained.

FIG. 7A shows VSWR and insertion on the input side of Comparative Example 3, which is a non-reciprocal circuit device using a ferrite magnet made of SrO.Fe ₂ O ₃ instead of the laminated magnet 2 in the non-reciprocal circuit device of Example 2. The frequency characteristic of loss is shown. FIG. 7B similarly shows frequency characteristics of VSRW and isolation on the output side. As in Comparative Example 2, the residual magnetic flux density of the ferrite magnet made of SrO.Fe ₂ O ₃ is 0.33 to 0.45 T, and the temperature coefficient of the residual magnetic flux density is -0.20 to -0.18%/°C. is. In FIGS. 7A and 7B, frequency characteristics obtained at temperatures of −40, 25, 85 and 125° C. are shown superimposed.

As shown in FIG. 7A, as the operating temperature rises or falls, the input side VSWR or insertion loss increases over the entire operating band. Also, as shown in FIG. 7B, when the operating temperature rises or falls, the output side VSWR increases over the entire operating band, and the isolation deteriorates. Therefore, in Comparative Example 3, as the temperature rises or falls, all of the input side VSWR, output side VSWR, insertion loss and isolation characteristics deteriorate over the entire operating band.

When the non-reciprocal circuit element according to the embodiment of the present disclosure was produced, the insertion loss was 1 dB (typ.) in a product with a typical frequency range of 3.4 to 3.8 GHz / bandwidth of 400 MHz included in the 5G band n78. , isolation of 10 dB (typ.), and intermodulation distortion of -60 dBc or less (when 5 W×2 waves are input).

Moreover, as can be seen from the above experiment, the configuration of the present embodiment can be used at a low temperature even when fabricating a non-reciprocal circuit element that is used in a frequency band other than the 3.4 to 3.8 GHz band from 3 GHz to 6 GHz. It is a very effective technology that can realize low IMD and high isolation with low insertion loss and little change in characteristics from high temperature to high temperature.

The non-reciprocal circuit element of the present disclosure can be used in various bands, and is particularly preferably used in the 3-6 GHz band.

1 Upper case 2 Laminated magnet 2A Rare earth magnets 2An, 2As, 2Bn, 2Bs, 3a Principal surface 2B Ferrite magnet 3 Ferrimagnetic bodies 4, 5, 6 Center conductor 7 Resin cases 8, 9, 10 Capacitive element 12 Lower cases 13a to 13d Recess 20 Assembly 30 Nonreciprocal circuit element

Claims (6)

a ferrimagnetic material having a main surface;
a plurality of central conductors arranged in a state insulated from each other on the main surface of the ferrimagnetic material;
A laminated magnet in which a ferrite magnet containing Sr and a rare earth magnet containing Sm are laminated, the laminated magnet being arranged so as to face the plurality of central conductors;
with
A non-reciprocal circuit device, wherein the composite temperature coefficient of residual magnetic flux density of the laminated magnet is -0.14%/°C or more and -0.06%/°C or less. 2. The ferrimagnetic material according to claim 1, wherein the ferrimagnetic material has a saturation magnetic flux density of 40 mT or more and 80 mT or less, and a temperature coefficient of the saturation magnetic flux density of −0.45%/° C. or more and −0.25%/° C. or less. non-reciprocal circuit element. 3. The non-reciprocal circuit device according to claim 1, wherein a ratio of the thickness of said rare earth magnet to the total thickness of said ferrite magnet and said rare earth magnet is 1/4 or more and 3/4 or less. 4. The non-reciprocal circuit device according to claim 1, wherein in said laminated magnet, said ferrite magnet is closer to said plurality of central conductors than said rare earth magnet. 5. The non-reciprocal circuit device according to claim 1, wherein the composite temperature coefficient of residual magnetic flux density of said laminated magnet is -0.12%/° C. or more and -0.08%/° C. or less. In the frequency characteristics of the insertion loss of the nonreciprocal circuit element, the resonance frequency of the main band and the attenuation pole closest to the resonance frequency are separated by 200 MHz or more in a temperature range of -40°C to 125°C. The non-reciprocal circuit device according to any one of claims 1 to 5.

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