JP2022098355A - Flow rate measurement method and substrate processing device - Google Patents

Flow rate measurement method and substrate processing device Download PDF

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JP2022098355A
JP2022098355A JP2020211855A JP2020211855A JP2022098355A JP 2022098355 A JP2022098355 A JP 2022098355A JP 2020211855 A JP2020211855 A JP 2020211855A JP 2020211855 A JP2020211855 A JP 2020211855A JP 2022098355 A JP2022098355 A JP 2022098355A
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gas
flow rate
metal window
supply port
branch
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威 李
Takeshi Ri
純一 阿部
Junichi Abe
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Tokyo Electron Ltd
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Priority to TW110145678A priority patent/TW202231127A/en
Priority to KR1020210175989A priority patent/KR20220089637A/en
Priority to CN202111500125.7A priority patent/CN114719918A/en
Publication of JP2022098355A publication Critical patent/JP2022098355A/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/76—Devices for measuring mass flow of a fluid or a fluent solid material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F15/00—Details of, or accessories for, apparatus of groups G01F1/00 - G01F13/00 insofar as such details or appliances are not adapted to particular types of such apparatus
    • G01F15/06—Indicating or recording devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F5/00—Measuring a proportion of the volume flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Fluid Mechanics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Measuring Volume Flow (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

To accurately measures the flow rate of gas after branching, which is shunted by a branch gas pipe and flows into a processing chamber.SOLUTION: A flow rate measuring method for measuring the flow rate of gas in a substrate processing device including a gas supply pipe that supplies gas, a plurality of branched gas pipes that are branched from the gas supply pipe, a metal window that communicates with the plurality of branched gas pipes, and a shower head located at the bottom of the metal window and having a gas discharge hole for passing the gas through the metal window includes a step of arranging a flow meter at a supply port of the metal window communicating with the plurality of the branched gas pipes and measuring the flow rate of gas flowing to the supply port of the metal window by the flow meter.SELECTED DRAWING: Figure 2

Description

本開示は、流量測定方法及び基板処理装置に関する。 The present disclosure relates to a flow rate measuring method and a substrate processing apparatus.

例えば、特許文献１は、ガス吐出孔群をそれぞれ有するガス拡散室に連通した分岐配管部に流量制御器を設け、分岐配管の内部の圧力を測定することでシャワーヘッドの検査を行うことを提案している。 For example, Patent Document 1 proposes to inspect a shower head by providing a flow rate controller in a branch pipe portion communicating with a gas diffusion chamber having a gas discharge hole group and measuring the pressure inside the branch pipe. is doing.

特開２０１８－２９１５３号公報Japanese Unexamined Patent Publication No. 2018-29153

ところで、基板処理装置において、より高度な加工均一性を得るため、処理室内に供給する処理ガスの分布を制御することが重要になっている。よって、分岐ガス配管により分流され、処理室内に供給されるガスの流量を正しく測定することが製品不良を発生させないために望まれる。 By the way, in the substrate processing apparatus, it is important to control the distribution of the processing gas supplied to the processing chamber in order to obtain a higher degree of processing uniformity. Therefore, it is desirable to accurately measure the flow rate of the gas separated by the branch gas pipe and supplied to the processing chamber in order to prevent product defects.

本開示は、分岐ガス配管により分流され、処理室内に流れる分岐後のガスの流量を精度良く測定する流量測定方法及び基板処理装置を提供する。 The present disclosure provides a flow rate measuring method and a substrate processing apparatus for accurately measuring the flow rate of a gas after branching, which is divided by a branch gas pipe and flows into a processing chamber.

本開示の一の態様によれば、ガスを供給するガス供給配管と、前記ガス供給配管から分岐する複数の分岐ガス配管と、前記複数の分岐ガス配管に連通する金属窓と、前記金属窓の底部に配置され、前記金属窓から前記ガスを通すガス吐出孔を有するシャワーヘッドと、を有する基板処理装置においてガスの流量を測定する流量測定方法であって、複数の前記分岐ガス配管に連通する前記金属窓の供給口に流量計を配置し、前記流量計により前記金属窓の供給口に流れるガスの流量を測定する工程を有する、流量測定方法が提供される。 According to one aspect of the present disclosure, a gas supply pipe for supplying gas, a plurality of branched gas pipes branched from the gas supply pipe, a metal window communicating with the plurality of branched gas pipes, and the metal window. A flow rate measuring method for measuring a gas flow rate in a substrate processing apparatus having a shower head arranged at the bottom and having a gas discharge hole for passing the gas through the metal window, which communicates with a plurality of the branched gas pipes. Provided is a flow rate measuring method comprising a step of arranging a flow meter at a supply port of the metal window and measuring the flow rate of gas flowing through the supply port of the metal window by the flow meter.

一の側面によれば、分岐ガス配管により分流され、処理室内に流れる分岐後のガスの流量を精度良く測定することができる。 According to one aspect, it is possible to accurately measure the flow rate of the gas after branching, which is divided by the branch gas pipe and flows into the processing chamber.

実施形態に係る基板処理装置の一例を示す断面模式図である。It is sectional drawing which shows an example of the substrate processing apparatus which concerns on embodiment. 実施形態に係る金属窓の表面、拡散室及び流量計の一例を示す図である。It is a figure which shows an example of the surface of a metal window, a diffusion chamber and a flow meter which concerns on embodiment. 実施形態に係るガス系統の一例を模式的に示す図である。It is a figure which shows typically an example of the gas system which concerns on embodiment. 図２のＡ－Ａ断面を示す図である。It is a figure which shows the AA cross section of FIG. 実施形態に係る流量計によるセンターエリアの測定値と計算値との一例を示す図である。It is a figure which shows an example of the measured value and the calculated value of the center area by the flow meter which concerns on embodiment. 実施形態に係る各同一エリアの各パーツの測定値の一例を示す図である。It is a figure which shows an example of the measured value of each part of each same area which concerns on embodiment.

以下、図面を参照して本開示を実施するための形態について説明する。各図面において、同一構成部分には同一符号を付し、重複した説明を省略する場合がある。 Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same components may be designated by the same reference numerals and duplicate explanations may be omitted.

［基板処理装置］
はじめに、図１及び図２を参照して、実施形態に係る基板処理装置１００について説明する。図１は、実施形態に係る基板処理装置１００の一例を示す断面模式図である。基板処理装置１００は、実施形態に係る流量測定方法を実行可能な装置の一例である。 [Board processing equipment]
First, the substrate processing apparatus 100 according to the embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic cross-sectional view showing an example of the substrate processing apparatus 100 according to the embodiment. The substrate processing device 100 is an example of a device capable of executing the flow rate measuring method according to the embodiment.

基板処理装置１００は、例えばプラズマ処理装置であり、誘導結合プラズマ（ＩＣＰ：Inductively Coupled Plasma）を生成する。基板処理装置１００は、生成されたプラズマを用いて、矩形状の基板Ｇに対し、エッチングやアッシング、成膜等のプラズマ処理を施す。本実施形態において、基板Ｇは、例えばＦＰＤ（Flat Panel Display）用のガラス基板である。 The substrate processing apparatus 100 is, for example, a plasma processing apparatus and generates inductively coupled plasma (ICP). The substrate processing apparatus 100 uses the generated plasma to perform plasma processing such as etching, ashing, and film formation on the rectangular substrate G. In the present embodiment, the substrate G is, for example, a glass substrate for an FPD (Flat Panel Display).

基板処理装置１００は、処理容器２０および制御装置（制御部）９０を有する。処理容器２０は、例えば、内壁面が陽極酸化処理されたアルミニウム等の導電性材料によって形成された直方体状の箱型の容器であり、その内部は基板Ｇを処理する処理室Ｓとなっている。処理容器２０は接地されている。処理容器２０は、上部の蓋１１と、下部の本体１５とが、複数のシャワーヘッド３４を備える隔壁１４により区画されている。複数のシャワーヘッド３４は、基板Ｇに対向し、上部に複数の金属窓３２Ａ～３２Ｆ（総称して、「金属窓３２」ともいう。）を有する。本体１５には、基板Ｇを搬出入するための搬出入口１８が開設されており、搬出入口１８はゲートバルブ２４により開閉自在に構成されている。 The substrate processing device 100 includes a processing container 20 and a control device (control unit) 90. The processing container 20 is, for example, a rectangular parallelepiped box-shaped container whose inner wall surface is formed of a conductive material such as aluminum which has been anodized, and the inside thereof is a processing chamber S for processing the substrate G. .. The processing container 20 is grounded. In the processing container 20, the upper lid 11 and the lower main body 15 are partitioned by a partition wall 14 provided with a plurality of shower heads 34. The plurality of shower heads 34 face the substrate G and have a plurality of metal windows 32A to 32F (collectively referred to as "metal windows 32") at the upper part thereof. The main body 15 is provided with an carry-in / out port 18 for carrying in / out the substrate G, and the carry-in / out port 18 is configured to be openable and closable by a gate valve 24.

隔壁１４とシャワーヘッド３４との間、及び隣接するシャワーヘッド３４の間には、絶縁部材３７が配置され、シャワーヘッド３４は、絶縁部材３７により相互に電気的に絶縁されている。シャワーヘッド３４の替わりに誘電体窓が形成されてもよい。 An insulating member 37 is arranged between the partition wall 14 and the shower head 34 and between the adjacent shower heads 34, and the shower head 34 is electrically insulated from each other by the insulating member 37. A dielectric window may be formed in place of the shower head 34.

処理容器２０は、隔壁１４により上下に分かれた上方空間であるアンテナ室Ａと処理室Ｓに区画されている。隔壁１４と本体１５とで囲まれる空間が処理室Ｓとなる。蓋１１と本体１５とは、通常時は密閉しているが隔壁１４の下面で分割可能であり、基板処理装置１００の組み立て時には、蓋１１側が例えば上方向に移動して本体１５から離脱することで、本体１５内（処理室Ｓ）が大気開放される。 The processing container 20 is divided into an antenna chamber A and a processing chamber S, which are upper spaces divided vertically by a partition wall 14. The space surrounded by the partition wall 14 and the main body 15 is the processing chamber S. The lid 11 and the main body 15 are normally sealed, but can be separated by the lower surface of the partition wall 14, and when the substrate processing device 100 is assembled, the lid 11 side moves upward, for example, and separates from the main body 15. Then, the inside of the main body 15 (processing chamber S) is opened to the atmosphere.

複数の金属窓３２Ａ～３２Ｆのそれぞれの内部には、分岐ガス配管５２が形成されている。各分岐ガス配管５２は、処理容器２０の外部から供給されるガスを各金属窓３２に供給するための配管である。分岐ガス配管５２は、金属窓３２内の拡散室３３に連通している。金属窓３２内の拡散室３３の底部はシャワーヘッド３４によって形成されている。シャワーヘッド３４には、ガス吐出孔３６が形成されている。分岐ガス配管５２から金属窓３２に供給されたガスは、金属窓３２内の拡散室３３で拡散される。ガスは、拡散室３３からシャワーヘッド３４に形成されたガス吐出孔３６へ流れて処理室Ｓへ供給される。金属窓３２Ａ～３２Ｆに連通している分岐ガス配管５２は、分岐ガス配管Ｌ１～Ｌ６に接続されている。分岐ガス配管５２が金属窓３２内に形成されている拡散室３３と連通している部分を、金属窓３２の供給口３５という。分岐ガス配管Ｌ１～Ｌ６を総称して分岐ガス配管Ｌともいう。 A branch gas pipe 52 is formed inside each of the plurality of metal windows 32A to 32F. Each branch gas pipe 52 is a pipe for supplying gas supplied from the outside of the processing container 20 to each metal window 32. The branch gas pipe 52 communicates with the diffusion chamber 33 in the metal window 32. The bottom of the diffusion chamber 33 in the metal window 32 is formed by a shower head 34. A gas discharge hole 36 is formed in the shower head 34. The gas supplied from the branch gas pipe 52 to the metal window 32 is diffused in the diffusion chamber 33 in the metal window 32. The gas flows from the diffusion chamber 33 to the gas discharge hole 36 formed in the shower head 34 and is supplied to the processing chamber S. The branch gas pipe 52 communicating with the metal windows 32A to 32F is connected to the branch gas pipes L1 to L6. The portion where the branch gas pipe 52 communicates with the diffusion chamber 33 formed in the metal window 32 is referred to as a supply port 35 of the metal window 32. The branch gas pipes L1 to L6 are collectively referred to as a branch gas pipe L.

分岐ガス配管Ｌ１～Ｌ６は、分岐器６５を介して処理ガス配管６８に接続され、処理ガス配管６８は、ガス供給部６０に接続されている。ガス供給部６０から処理ガス配管６８に導入された処理ガスは、分岐器６５により分流される。分流された処理ガスは、分岐ガス配管Ｌ１～Ｌ６を流れ、金属窓３２Ａ～３２Ｆ内の拡散室３３に連通する多数のガス吐出孔３６から処理室Ｓにシャワー状に導入される。 The branch gas pipes L1 to L6 are connected to the processing gas pipe 68 via the turnout 65, and the processing gas pipe 68 is connected to the gas supply unit 60. The processing gas introduced from the gas supply unit 60 into the processing gas pipe 68 is diverted by the turnout 65. The separated processing gas flows through the branch gas pipes L1 to L6 and is introduced into the processing chamber S in a shower manner from a large number of gas discharge holes 36 communicating with the diffusion chamber 33 in the metal windows 32A to 32F.

つまり、処理ガス配管６８は、処理容器２０の外部から処理容器２０の内部の複数の金属窓３２Ａ～３２Ｆまで連通している。ガス供給部６０は、処理ガス供給源６４およびバルブ６２を有する。処理ガス配管６８は、バルブ６２を介して、処理ガス供給源６４に接続されている。バルブ６２は、開閉により処理ガスの供給及び供給停止を制御する。 That is, the processing gas pipe 68 communicates from the outside of the processing container 20 to the plurality of metal windows 32A to 32F inside the processing container 20. The gas supply unit 60 has a processing gas supply source 64 and a valve 62. The processing gas pipe 68 is connected to the processing gas supply source 64 via a valve 62. The valve 62 controls the supply and stop of the processing gas by opening and closing.

処理ガス配管６８は、分岐器６５に接続され、分岐器６５で複数の分岐ガス配管Ｌ１～Ｌ６に分岐する。分岐した各分岐ガス配管Ｌ１～Ｌ６は、複数の金属窓３２Ａ～３２Ｆに設けられた各分岐ガス配管５２に接続され、各分岐ガス配管５２は、隔壁１４の異なる領域に位置する金属窓３２Ａ～３２Ｆにそれぞれ接続されている。分岐した各ガス配管Ｌ１～Ｌ６は、フローレシオコントローラ（ＦＲＣ：Flow Ratio Controller）６３Ａ～６３Ｆを有する。フローレシオコントローラ６３Ａ～６３Ｆは、処理ガス供給源６４内のＭＦＣ（Mass Flow Controller）等の流量制御器で決定された流量を所定の比率に分配する。フローレシオコントローラ６３Ａ～６３Ｆ及び分岐器６５により処理ガスのガス流量及びガス配分を調節することによって処理室Ｓ内に供給する処理ガスの分布を制御することができる。 The processing gas pipe 68 is connected to the turnout 65, and is branched into a plurality of branch gas pipes L1 to L6 by the turnout 65. The branched branch gas pipes L1 to L6 are connected to the branch gas pipes 52 provided in the plurality of metal windows 32A to 32F, and the branch gas pipes 52 are the metal windows 32A to located in different regions of the partition wall 14. They are connected to 32F respectively. Each of the branched gas pipes L1 to L6 has a flow ratio controller (FRC: Flow Ratio Controller) 63A to 63F. The flow ratio controllers 63A to 63F distribute the flow rate determined by the flow controller such as an MFC (Mass Flow Controller) in the processing gas supply source 64 to a predetermined ratio. The distribution of the processing gas supplied into the processing chamber S can be controlled by adjusting the gas flow rate and the gas distribution of the processing gas by the flow ratio controllers 63A to 63F and the turnout 65.

加えて、ガス供給部６０は、不活性ガス供給源６７、外部ガス配管６６、不活性ガス分岐配管６１Ａ～６１Ｆおよびバルブ６９Ａ～６９Ｆを有する。外部ガス配管６６は、不活性ガス供給源６７に接続されている。不活性ガス分岐配管６１Ａ～６１Ｆは、外部ガス配管６６から分岐している。分岐した各不活性ガス分岐配管６１Ａ～６１Ｆは、各分岐ガス配管Ｌ１～Ｌ６に接続されている。フローレシオコントローラ６３Ａ～６３Ｆと分岐ガス配管５２の間に、不活性ガス分岐配管６１Ａ～６１Ｆと分岐ガス配管Ｌ１～Ｌ６は接続されている。バルブ６９Ａ～６９Ｆは、不活性ガス分岐配管６１Ａ～６１Ｆに設けられている。バルブ６９Ａ～６９Ｆは、開閉により不活性ガスの供給及び供給停止を制御する。 In addition, the gas supply unit 60 includes an inert gas supply source 67, an external gas pipe 66, an inert gas branch pipe 61A to 61F, and valves 69A to 69F. The external gas pipe 66 is connected to the inert gas supply source 67. The inert gas branch pipes 61A to 61F are branched from the external gas pipe 66. The branched inert gas branch pipes 61A to 61F are connected to the branch gas pipes L1 to L6. The inert gas branch pipes 61A to 61F and the branch gas pipes L1 to L6 are connected between the flow ratio controllers 63A to 63F and the branch gas pipe 52. The valves 69A to 69F are provided in the inert gas branch pipes 61A to 61F. The valves 69A to 69F control the supply and stop of the supply of the inert gas by opening and closing.

外部ガス配管６６は不活性ガス分岐配管６１Ａ～６１Ｆと連結して、分岐ガス配管Ｌ１～Ｌ６に分岐する。不活性ガス供給源６７内のＭＦＣ(Mass Flow Controller)等の流量制御器で所定のガス流量を分岐ガス配管Ｌ１～Ｌ６に供給する。 The external gas pipe 66 is connected to the inert gas branch pipes 61A to 61F and branches to the branch gas pipes L1 to L6. A predetermined gas flow rate is supplied to the branch gas pipes L1 to L6 by a flow controller such as an MFC (Mass Flow Controller) in the inert gas supply source 67.

例えば、本実施形態に係る流量測定方法は、基板処理装置１００の組み立て時に、蓋１１を開いて本体１５内（処理室Ｓ）を大気開放した状態で、バルブ６２を閉じ、処理ガスの供給を停止する。そして、バルブ６９Ａ～６９Ｆを開いて不活性ガス供給源６７からアルゴン（Ａｒ）ガスやヘリウム（Ｈｅ）ガスなどの不活性ガスを金属窓３２に供給する。なお、基板処理時には、蓋１１を閉じて本体１５内（処理室Ｓ）を所定の減圧状態に維持し、バルブ６９Ａ～６９Ｆを閉じて不活性ガスの供給を停止し、バルブ６２を開いて処理ガスを処理室Ｓに供給する。 For example, in the flow rate measuring method according to the present embodiment, when the substrate processing apparatus 100 is assembled, the valve 62 is closed and the processing gas is supplied while the lid 11 is opened and the inside of the main body 15 (processing chamber S) is open to the atmosphere. Stop. Then, the valves 69A to 69F are opened to supply an inert gas such as argon (Ar) gas or helium (He) gas to the metal window 32 from the inert gas supply source 67. At the time of substrate processing, the lid 11 is closed to maintain the inside of the main body 15 (processing chamber S) in a predetermined depressurized state, the valves 69A to 69F are closed to stop the supply of the inert gas, and the valve 62 is opened for processing. The gas is supplied to the processing chamber S.

本実施形態に係る流量測定方法は、基板処理装置１００の組み立て時に、外部ガス配管６６から不活性ガスを供給する替わりに、ドライエアーを供給してもよい。 In the flow rate measuring method according to the present embodiment, when the substrate processing apparatus 100 is assembled, dry air may be supplied instead of supplying the inert gas from the external gas pipe 66.

本体１５には複数の排気口１９が開設されており、排気口１９にはガス排気管２５が接続され、ガス排気管２５は開閉弁２６を介して排気装置２７に接続されている。ガス排気管２５、開閉弁２６及び排気装置２７により、ガス排気部２８が形成される。排気装置２７はターボ分子ポンプ等の真空ポンプを有し、プロセス中に本体１５内を所定の真空度まで自在に真空引き出来るように構成されている。 A plurality of exhaust ports 19 are opened in the main body 15, a gas exhaust pipe 25 is connected to the exhaust port 19, and the gas exhaust pipe 25 is connected to the exhaust device 27 via an on-off valve 26. The gas exhaust section 28 is formed by the gas exhaust pipe 25, the on-off valve 26, and the exhaust device 27. The exhaust device 27 has a vacuum pump such as a turbo molecular pump, and is configured to be able to freely evacuate the inside of the main body 15 to a predetermined degree of vacuum during the process.

金属窓３２の上方空間であるアンテナ室Ａには、金属窓３２に離間して高周波アンテナ５１が配設されている。高周波アンテナ５１はプラズマの生成に寄与し、銅等の導電性の金属から形成されるアンテナ線を、環状もしくは渦巻き状に巻装することにより形成される。例えば、環状のアンテナ線を多重に配設してもよい。高周波アンテナ５１は、インピーダンス整合を行う整合器５５を介して高周波電源５６に接続されている。 In the antenna chamber A, which is the space above the metal window 32, a high frequency antenna 51 is arranged separated from the metal window 32. The high frequency antenna 51 contributes to the generation of plasma and is formed by winding an antenna wire formed of a conductive metal such as copper in an annular shape or a spiral shape. For example, a plurality of annular antenna wires may be arranged. The high frequency antenna 51 is connected to the high frequency power supply 56 via a matching device 55 that performs impedance matching.

高周波アンテナ５１に対して高周波電源５６から例えば１３．５６ＭＨｚの高周波電力が印加されることにより、金属窓３２を介して処理室Ｓ内に誘導電界が形成される。この誘導電界により、シャワーヘッド３４から処理室Ｓに供給された処理ガスがプラズマ化されて誘導結合プラズマが生成され、プラズマ中のイオンが基板Ｇに提供される。 By applying high-frequency power of, for example, 13.56 MHz from the high-frequency power source 56 to the high-frequency antenna 51, an induced electric field is formed in the processing chamber S through the metal window 32. By this induced electric field, the processing gas supplied from the shower head 34 to the processing chamber S is turned into plasma to generate inductively coupled plasma, and the ions in the plasma are provided to the substrate G.

隔壁１４と本体１５とで囲まれる処理室Ｓの内部には、基板支持部７０が設けられている。基板支持部７０は、基板Ｇを支持する。基板支持部７０は、インピーダンス整合を行う整合器８２を介してバイアス源である高周波電源８３に接続されている。高周波電源８３から基板支持部７０に対して例えば３．２ＭＨｚの高周波電力が印加されることにより、ＲＦバイアスを発生させ、高周波電源５６にて生成されたイオンを基板Ｇに引き付けることができる。 A substrate support portion 70 is provided inside the processing chamber S surrounded by the partition wall 14 and the main body 15. The board support portion 70 supports the board G. The board support portion 70 is connected to a high frequency power supply 83 which is a bias source via a matching box 82 that performs impedance matching. By applying high-frequency power of, for example, 3.2 MHz from the high-frequency power supply 83 to the substrate support portion 70, RF bias can be generated and the ions generated by the high-frequency power supply 56 can be attracted to the substrate G.

高周波電源５６はプラズマ発生用のソース源であり、基板支持部７０に接続されている高周波電源８３は、発生したイオンを引き付けて運動エネルギを付与するバイアス源となる。このように、ソース源には誘導結合を利用してプラズマを生成し、別電源であるバイアス源を基板支持部７０に接続してイオンエネルギの制御を行う。これにより、プラズマの生成とイオンエネルギの制御が独立して行われ、プロセスの自由度を高めることができる。高周波電源５６から出力される高周波電力の周波数は、０．１ＭＨｚ乃至５００ＭＨｚの範囲内で設定されるのが好ましい。 The high frequency power supply 56 is a source source for plasma generation, and the high frequency power supply 83 connected to the substrate support portion 70 is a bias source that attracts the generated ions and imparts kinetic energy. In this way, plasma is generated from the source source using inductive coupling, and a bias source, which is a separate power source, is connected to the substrate support portion 70 to control ion energy. As a result, plasma generation and ion energy control are performed independently, and the degree of freedom of the process can be increased. The frequency of the high frequency power output from the high frequency power supply 56 is preferably set in the range of 0.1 MHz to 500 MHz.

基板処理装置１００は、制御装置９０を更に備え得る。制御装置９０は、プロセッサ、メモリなどの記憶部、入力装置、表示装置、信号の入出力インターフェイス等を備えるコンピュータであり得る。制御装置９０は、基板処理装置１００の各部を制御する。制御装置９０では、入力装置を用いて、オペレータが基板処理装置１００を管理するためにコマンドの入力操作等を行うことができる。また、制御装置９０では、表示装置により、基板処理装置１００の稼働状況を可視化して表示することができる。さらに、記憶部には、制御プログラム及びレシピデータが格納されている。制御プログラムは、基板処理装置１００で各種処理を実行するために、プロセッサによって実行される。プロセッサが、制御プログラムを実行し、レシピデータに従って基板処理装置１００の各部を制御する。 The substrate processing device 100 may further include a control device 90. The control device 90 may be a computer including a processor, a storage unit such as a memory, an input device, a display device, a signal input / output interface, and the like. The control device 90 controls each part of the substrate processing device 100. In the control device 90, the operator can perform a command input operation or the like in order to manage the board processing device 100 by using the input device. Further, in the control device 90, the operation status of the board processing device 100 can be visualized and displayed by the display device. Further, a control program and recipe data are stored in the storage unit. The control program is executed by the processor in order to execute various processes in the board processing device 100. The processor executes a control program and controls each part of the board processing apparatus 100 according to the recipe data.

［流量制御］
基板処理装置１００において、より高度な加工均一性を得るため、処理室Ｓ内のプラズマ密度および処理ガスの分布を制御することが重要となっている。しかしながら、従来、金属窓３２Ａ～３２Ｆのそれぞれにおいて分流されたガス流量を実測することができなかった。一方、金属窓３２Ａ～３２Ｆから処理室Ｓ内に想定と異なる流量のガスが流れると基板に製品不良を発生させる可能性がある。また、金属窓３２Ａ～３２Ｆから処理室Ｓ内に供給されるガスの流量を正しく測定できないと、基板処理装置１００の製造工程においてガスの配管回りの組み立てに誤りがあった場合にそのミスを検知できない。 [Flow control]
In the substrate processing apparatus 100, it is important to control the plasma density and the distribution of the processing gas in the processing chamber S in order to obtain a higher degree of processing uniformity. However, conventionally, it has not been possible to actually measure the flow rate of the gas separated in each of the metal windows 32A to 32F. On the other hand, if a gas having a flow rate different from the expected flow rate flows from the metal windows 32A to 32F into the processing chamber S, a product defect may occur on the substrate. Further, if the flow rate of the gas supplied from the metal windows 32A to 32F into the processing chamber S cannot be measured correctly, the mistake is detected when there is an error in the assembly around the gas pipe in the manufacturing process of the substrate processing apparatus 100. Can not.

そこで、本実施形態では、蓋１１を開けて、本体１５を大気開放し、シャワーヘッド３４を取り外して、金属窓３２Ａ～３２Ｆの天地を逆転させて配置し、金属窓３２Ａ～３２Ｆのそれぞれの供給口３５に流量計を取り付ける。そして、金属窓３２Ａ～３２Ｆの供給口３５にて、分流後のガスの流量をそれぞれ測定する。なお、金属窓３２Ａ～３２Ｆの供給口３５とは、分岐ガス配管５２と、金属窓３２Ａ～３２Ｆ内にそれぞれ形成されている拡散室３３と、が連通している部分である。 Therefore, in the present embodiment, the lid 11 is opened, the main body 15 is opened to the atmosphere, the shower head 34 is removed, the top and bottom of the metal windows 32A to 32F are reversed, and the metal windows 32A to 32F are supplied. A flow meter is attached to the port 35. Then, the flow rate of the gas after the diversion is measured at the supply ports 35 of the metal windows 32A to 32F, respectively. The supply port 35 of the metal windows 32A to 32F is a portion where the branch gas pipe 52 and the diffusion chamber 33 formed in the metal windows 32A to 32F communicate with each other.

本実施形態に係る流量測定方法は、複数の金属窓３２のうち、予め定められた同一エリア内に配置されている金属窓３２の供給口３５を流れるガスの流量を同時に測定することを可能とする。また、本実施形態に係る流量測定方法では、常設された流量計等のセンサー及び真空環境を必要としない。基板処理装置１００の組み立て時に複数の金属窓３２Ａ～３２Ｆのエリア毎の供給口３５に流量計を配置する。そして、流量計により各エリアのガスの流量を測定する。これにより、各金属窓３２Ａ～３２Ｆの各エリアから処理室Ｓに供給されるガスの流量を正確に測定することができ、かつ、ガスの配管回りの組み立てミスを検知することができる。 The flow rate measuring method according to the present embodiment makes it possible to simultaneously measure the flow rate of gas flowing through the supply port 35 of the metal window 32 arranged in the same predetermined area among the plurality of metal windows 32. do. Further, the flow rate measuring method according to the present embodiment does not require a sensor such as a permanent flow meter and a vacuum environment. When assembling the substrate processing apparatus 100, a flow meter is arranged at the supply port 35 for each area of the plurality of metal windows 32A to 32F. Then, the flow rate of gas in each area is measured by a flow meter. As a result, the flow rate of the gas supplied from each area of each of the metal windows 32A to 32F to the processing chamber S can be accurately measured, and an assembly error around the gas pipe can be detected.

流量計２００は、図２に示すように、基板処理装置１００の組み立て時に金属窓３２の供給口に取り付ける。図２は、絶縁部材３７によって電気的に絶縁された金属窓３２の表面を示す。つまり、図２は、図１の金属窓３２の底部のシャワーヘッド３４を外した状態で天地を逆転させて金属窓３２の表面、拡散室３３の内部及び流量計２００の一例を示した図である。 As shown in FIG. 2, the flow meter 200 is attached to the supply port of the metal window 32 when the substrate processing device 100 is assembled. FIG. 2 shows the surface of the metal window 32 electrically insulated by the insulating member 37. That is, FIG. 2 is a diagram showing an example of the surface of the metal window 32, the inside of the diffusion chamber 33, and the flow meter 200 by reversing the top and bottom with the shower head 34 at the bottom of the metal window 32 of FIG. 1 removed. be.

金属窓３２は、エリア毎に複数のパーツに分かれており、複数のパーツのそれぞれのガスの供給口３５に流量計２００が取り付けられている。 The metal window 32 is divided into a plurality of parts for each area, and a flow meter 200 is attached to a gas supply port 35 of each of the plurality of parts.

金属窓３２の複数のエリアについて説明する。図２の例では、金属窓３２は、中央のセンターエリアＣ、外周のエッジエリアＯ、センターエリアＣとエッジエリアＯの間のミドルエリアＭに分かれ、更に、外周のエッジエリアＯ及びミドルエリアＭは複数のエリアに分かれている。 A plurality of areas of the metal window 32 will be described. In the example of FIG. 2, the metal window 32 is divided into a central center area C, an outer peripheral edge area O, and a middle area M between the center area C and the edge area O, and further, an outer peripheral edge area O and a middle area M. Is divided into multiple areas.

［ガス系統］
図２及び図３を参照しながら実施形態に係るガス系統とエリアの一例を説明すると、センターエリアＣでは、金属窓３２Ａが４つのパーツＣ１～Ｃ４に分かれ、パーツＣ１～Ｃ４の金属窓３２Ａの供給口３５のそれぞれに流量計２００が一つずつ取り付けられる。図２に示すように、パーツＣ１、Ｃ３は三角形、パーツＣ２、Ｃ４は台形の形状をしている。 [Gas system]
Explaining an example of the gas system and the area according to the embodiment with reference to FIGS. 2 and 3, in the center area C, the metal window 32A is divided into four parts C1 to C4, and the metal windows 32A of the parts C1 to C4. One flow meter 200 is attached to each of the supply ports 35. As shown in FIG. 2, parts C1 and C3 have a triangular shape, and parts C2 and C4 have a trapezoidal shape.

例えば、金属窓３２ＡのパーツＣ４を拡大した図２の下図を参照すると、流量測定治具２０１により流量計２００が金属窓３２Ａに固定され、パーツＣ４の金属窓３２Ａの供給口３５に流量計２００が取り付けられている。流量計２００の取り付け部分の構造については、図２のＡ－Ａ断面を示す図４を参照して、後述される。 For example, referring to the lower figure of FIG. 2 in which the part C4 of the metal window 32A is enlarged, the flow meter 200 is fixed to the metal window 32A by the flow rate measuring jig 201, and the flow meter 200 is connected to the supply port 35 of the metal window 32A of the part C4. Is attached. The structure of the mounting portion of the flow meter 200 will be described later with reference to FIG. 4, which shows the AA cross section of FIG.

図３には、エリア毎のガス系統が示され、例えば、金属窓３２ＡのパーツＣ１～Ｃ４が同一エリアのセンターエリアＣに予め設定されている。分岐ガス配管Ｌ１は４分岐し、４分岐後の分岐ガス配管５２は金属窓３２ＡのパーツＣ１～Ｃ４に接続され、同一エリア内の４つのパーツＣ１～Ｃ４のそれぞれに設けられた金属窓３２Ａの供給口３５に同時にガスを流す。これにより、流量計２００は、ＣエリアのパーツＣ１～Ｃ４のそれぞれに設けられた金属窓３２Ａの供給口３５を流れるガスの流量を同時に測定できる。 FIG. 3 shows a gas system for each area. For example, parts C1 to C4 of the metal window 32A are preset in the center area C of the same area. The branch gas pipe L1 is branched into four, and the branch gas pipe 52 after the four branches is connected to the parts C1 to C4 of the metal window 32A, and the metal windows 32A provided in each of the four parts C1 to C4 in the same area. Gas is simultaneously flowed to the supply port 35. Thereby, the flow meter 200 can simultaneously measure the flow rate of the gas flowing through the supply port 35 of the metal window 32A provided in each of the parts C1 to C4 in the C area.

センターエリアＭでは、金属窓３２ＢのパーツＭＬ１～ＭＬ４が同一エリアに予め設定され、金属窓３２ＣのパーツＭＳ１～ＭＳ４が同一エリアに予め設定されている。分岐ガス配管Ｌ２は４分岐し、４分岐後の分岐ガス配管５２は金属窓３２ＢのパーツＭＬ１～ＭＬ４に接続され、同一エリア内の４つのパーツＭＬ１～ＭＬ４のそれぞれに設けられた金属窓３２Ｂの供給口３５に同時にガスを流す。これにより、流量計２００は、ＭＬエリアのパーツＭＬ１～ＭＬ４のそれぞれに設けられた金属窓３２Ｂの供給口３５を流れるガスの流量を同時に測定できる。 In the center area M, the parts ML1 to ML4 of the metal window 32B are preset in the same area, and the parts MS1 to MS4 of the metal window 32C are preset in the same area. The branch gas pipe L2 is branched into four, and the branch gas pipe 52 after the four branches is connected to the parts ML1 to ML4 of the metal window 32B, and the metal windows 32B provided in each of the four parts ML1 to ML4 in the same area. Gas is simultaneously flowed to the supply port 35. Thereby, the flow meter 200 can simultaneously measure the flow rate of the gas flowing through the supply port 35 of the metal window 32B provided in each of the parts ML1 to ML4 in the ML area.

分岐ガス配管Ｌ３は４分岐し、４分岐後の分岐ガス配管５２は金属窓３２ＣのパーツＭＳ１～ＭＳ４に接続され、同一エリア内の４つのパーツＭＳ１～ＭＳ４のそれぞれに設けられた金属窓３２Ｃの供給口３５に同時にガスを流す。これにより、流量計２００は、ＭＳエリアのパーツＭＳ１～ＭＳ４のそれぞれに設けられた金属窓３２Ｃの供給口３５を流れるガスの流量を同時に測定できる。 The branch gas pipe L3 is branched into four, and the branch gas pipe 52 after the four branches is connected to the parts MS1 to MS4 of the metal window 32C, and the metal windows 32C provided in each of the four parts MS1 to MS4 in the same area. Gas is simultaneously flowed to the supply port 35. Thereby, the flow meter 200 can simultaneously measure the flow rate of the gas flowing through the supply port 35 of the metal window 32C provided in each of the parts MS1 to MS4 in the MS area.

エッジエリアＯでは、金属窓３２ＤのパーツＯＣ１～ＯＣ８が同一エリアに予め設定され、金属窓３２ＥのパーツＯＬＳ１、ＯＬＳ２が同一エリアに予め設定されている。更に、金属窓３２ＦのパーツＯＳＳ１、ＯＳＳ２が同一エリアに予め設定されている。分岐ガス配管Ｌ４は８分岐し、８分岐後の分岐ガス配管５２は金属窓３２ＤのパーツＯＣ１～ＯＣ８に接続され、同一エリア内の８つのパーツＯＣ１～ＯＣ８のそれぞれに設けられた金属窓３２Ｄの供給口３５に同時にガスを流す。これにより、流量計２００は、ＯＣエリアのパーツＯＣ１～ＯＣ８のそれぞれに設けられた金属窓３２Ｄの供給口３５を流れるガスの流量を同時に測定できる。 In the edge area O, the parts OC1 to OC8 of the metal window 32D are preset in the same area, and the parts OLS1 and OLS2 of the metal window 32E are preset in the same area. Further, the parts OSS1 and OSS2 of the metal window 32F are preset in the same area. The branch gas pipe L4 has eight branches, and the branch gas pipe 52 after the eight branches is connected to the parts OC1 to OC8 of the metal window 32D, and the metal window 32D provided in each of the eight parts OC1 to OC8 in the same area. Gas is simultaneously flowed through the supply port 35. As a result, the flow meter 200 can simultaneously measure the flow rate of the gas flowing through the supply port 35 of the metal window 32D provided in each of the parts OC1 to OC8 in the OC area.

分岐ガス配管Ｌ５は２分岐し、２分岐後の分岐ガス配管５２は金属窓３２ＥのパーツＯＬＳ１、ＯＬＳ２に接続され、同一エリア内の２つのパーツＯＬＳ１、ＯＬＳ２のそれぞれに設けられた金属窓３２Ｅの供給口３５に同時にガスを流す。これにより、流量計２００は、ＯＬＳエリアのパーツＯＬＳ１、ＯＬＳ２のそれぞれに設けられた金属窓３２Ｅの供給口３５を流れるガスの流量を同時に測定できる。 The branch gas pipe L5 is branched into two, and the branch gas pipe 52 after the two branches is connected to the parts OLS1 and OLS2 of the metal window 32E, and the metal window 32E provided in each of the two parts OLS1 and OLS2 in the same area. Gas is simultaneously flowed to the supply port 35. As a result, the flow meter 200 can simultaneously measure the flow rate of the gas flowing through the supply port 35 of the metal window 32E provided in each of the parts OLS1 and OLS2 in the OLS area.

分岐ガス配管Ｌ６は２分岐し、２分岐後の分岐ガス配管５２は金属窓３２ＦのパーツＯＳＳ１、ＯＳＳ２に接続され、同一エリア内の２つのパーツＯＳＳ１、ＯＳＳ２のそれぞれに設けられた金属窓３２Ｆの供給口３５に同時にガスを流す。これにより、流量計２００は、ＯＳＳエリアのパーツＯＳＳ１、ＯＳＳ２のそれぞれに設けられた金属窓３２Ｆの供給口３５を流れるガスの流量を同時に測定できる。 The branch gas pipe L6 is branched into two, and the branch gas pipe 52 after the two branches is connected to the parts OSS1 and OSS2 of the metal window 32F, and the metal window 32F provided in each of the two parts OSS1 and OSS2 in the same area. Gas is simultaneously flowed to the supply port 35. As a result, the flow meter 200 can simultaneously measure the flow rate of the gas flowing through the supply port 35 of the metal window 32F provided in each of the parts OSS1 and OSS2 in the OSS area.

［流量計］
次に、流量計２００の配置の一例について、図４を参照しながら説明する。図４は、図２のＡ－Ａ断面を示す図である。図４（ａ）及び（ｂ）に示すように、流量測定治具２０１を金属窓３２上（金属窓の表面）に固定し、流量計２００を流量測定治具２０１により金属窓３２に固定させる。流量計２００内の計測管２００aと、金属窓３２の供給口３５の末端部３５ａとが連通し、流量計２００は、金属窓３２の供給口３５の末端部３５ａを通るガスの流量を測定する。 [Flowmeter]
Next, an example of the arrangement of the flow meter 200 will be described with reference to FIG. FIG. 4 is a diagram showing a cross section taken along the line AA of FIG. As shown in FIGS. 4A and 4B, the flow rate measuring jig 201 is fixed on the metal window 32 (the surface of the metal window), and the flow meter 200 is fixed to the metal window 32 by the flow rate measuring jig 201. .. The measuring tube 200a in the flow meter 200 and the end portion 35a of the supply port 35 of the metal window 32 communicate with each other, and the flow meter 200 measures the flow rate of gas passing through the end portion 35a of the supply port 35 of the metal window 32. ..

図４（ａ）は、分岐ガス配管５２にオリフィス１０５が設けられていない場合の金属窓３２の供給口３５付近の流量計２００の配置を示す。図４（ｂ）は、分岐ガス配管５２にオリフィス１０５が設けられている場合の金属窓３２の供給口３５付近の流量計２００の配置を示す。 FIG. 4A shows the arrangement of the flow meter 200 near the supply port 35 of the metal window 32 when the orifice 105 is not provided in the branch gas pipe 52. FIG. 4B shows the arrangement of the flow meter 200 near the supply port 35 of the metal window 32 when the orifice 105 is provided in the branch gas pipe 52.

図４（ａ）及び（ｂ）では、金属窓３２に形成された分岐ガス配管５２により、金属窓３２の供給口３５が形成されている。分岐ガス配管５２は、例えばセラミックスから構成されている。 In FIGS. 4A and 4B, the supply port 35 of the metal window 32 is formed by the branch gas pipe 52 formed in the metal window 32. The branch gas pipe 52 is made of, for example, ceramics.

流量測定治具２０１は、金属窓３２上であって、金属窓３２の供給口３５の末端部３５ａを形成する分岐ガス配管５２のガス孔の端部（先端）に、シール部材１０１を介して配置される。分岐ガス配管５２のガス孔および流量計２００内の計測管２００ａは、シール部材１０１と流量測定治具２０１とを貫通する。シール部材１０１と分岐ガス配管５２との間には、シール部材１０４が設けられ、シール部材１０１と流量測定治具２０１との間には、シール部材１０３が設けられている。シール部材１０１、１０３、１０４は供給口３５を流れるガスをシールする。シール部材１０１は、例えばＳＵＳから構成されてもよい。シール部材１０３、１０４は例えばＯリングから形成されてもよい。 The flow rate measuring jig 201 is on the metal window 32 and is connected to the end (tip) of the gas hole of the branch gas pipe 52 forming the end 35a of the supply port 35 of the metal window 32 via the seal member 101. Be placed. The gas hole of the branch gas pipe 52 and the measuring pipe 200a in the flow meter 200 penetrate the seal member 101 and the flow rate measuring jig 201. A seal member 104 is provided between the seal member 101 and the branch gas pipe 52, and a seal member 103 is provided between the seal member 101 and the flow rate measuring jig 201. The sealing members 101, 103, 104 seal the gas flowing through the supply port 35. The seal member 101 may be made of, for example, SUS. The seal members 103 and 104 may be formed from, for example, an O-ring.

流量計２００は、金属窓３２の供給口３５の末端部３５ａにおいて流量測定治具２０１に取り付けられている。 The flow meter 200 is attached to the flow rate measuring jig 201 at the end portion 35a of the supply port 35 of the metal window 32.

図４（ｂ）の例では、供給口３５の基端部３５ｂに隣接してオリフィス１０５を配置し、オリフィス１０５によって金属窓３２の供給口３５から拡散室３３に流入するガスの流れを絞るように構成されている。また、図４（ｂ）の例では、供給口３５の内壁にスパイラル形状の溝５２ａを設け、オリフィス１０５で絞られたガスをスムーズに供給口３５の末端部３５ａまで送り出す構造を有する。なお、図４（ａ）の例では、供給口３５の内壁にスパイラル形状の溝５２ａを設けていないが、溝５２ａを設けてもよい。 In the example of FIG. 4B, the orifice 105 is arranged adjacent to the base end portion 35b of the supply port 35, and the flow of gas flowing into the diffusion chamber 33 from the supply port 35 of the metal window 32 is throttled by the orifice 105. It is configured in. Further, in the example of FIG. 4B, a spiral groove 52a is provided on the inner wall of the supply port 35, and the gas squeezed by the orifice 105 is smoothly sent out to the end portion 35a of the supply port 35. In the example of FIG. 4A, the spiral groove 52a is not provided on the inner wall of the supply port 35, but the groove 52a may be provided.

かかる構成では、流量計２００は、基板処理装置１００を製造後に、工場内にて基板処理装置１００を組み立てる際に取り付ける。つまり、流量計２００は常設せず、基板処理装置１００を製造後に、工場内にて組み立てた基板処理装置１００の金属窓３２の供給口３５を流れるガス流量の測定を行うときに取り付け、測定が終わったら金属窓３２から取り外す。よって、基板処理装置１００により基板Ｇに所望の処理を行う基板処理時には、流量計２００は取り外された状態である。 In such a configuration, the flow meter 200 is attached when the substrate processing apparatus 100 is assembled in the factory after the substrate processing apparatus 100 is manufactured. That is, the flow meter 200 is not permanently installed, but is attached and measured when measuring the gas flow rate flowing through the supply port 35 of the metal window 32 of the substrate processing device 100 assembled in the factory after the substrate processing device 100 is manufactured. When finished, remove it from the metal window 32. Therefore, the flow meter 200 is in a removed state at the time of substrate processing in which the substrate processing apparatus 100 performs the desired processing on the substrate G.

制御装置９０は、流量計２００により金属窓３２Ａ～３２Ｆの供給口３５に流れるガスの流量を測定する工程を制御する。大気環境下において流量計２００を金属窓３２の供給口３５に配置し、供給口３５の末端部３５ａに流れるガスの流量を流量計２００により測定する。測定後、流量計２００は、金属窓３２の供給口３５から取り外しが可能である。 The control device 90 controls the process of measuring the flow rate of the gas flowing through the supply ports 35 of the metal windows 32A to 32F by the flow meter 200. In an atmospheric environment, the flow meter 200 is arranged at the supply port 35 of the metal window 32, and the flow rate of the gas flowing through the terminal portion 35a of the supply port 35 is measured by the flow meter 200. After the measurement, the flow meter 200 can be removed from the supply port 35 of the metal window 32.

また、ガスの流量の測定では、金属窓３２を複数のエリアに分け、同一エリア内の金属窓３２の供給口３５に流れるガスの流量を同時に測定することが可能である。 Further, in the measurement of the gas flow rate, the metal window 32 can be divided into a plurality of areas, and the flow rate of the gas flowing to the supply port 35 of the metal window 32 in the same area can be measured at the same time.

ガスの流量を測定する場合、図１に示すバルブ６２を閉じ、処理ガスの供給を停止し、バルブ６９Ａ～６９Ｆを開き、不活性ガス供給源６７から出力した不活性ガスを金属窓３２Ａ～３２Ｆのそれぞれの供給口３５に流す。不活性ガスの替わりにドライエアーを金属窓３２Ａ～３２Ｆのそれぞれの供給口３５に流してもよい。 When measuring the gas flow rate, the valve 62 shown in FIG. 1 is closed, the supply of the processing gas is stopped, the valves 69A to 69F are opened, and the inert gas output from the inert gas supply source 67 is used for the metal windows 32A to 32F. It flows to each supply port 35 of. Instead of the inert gas, dry air may flow to the respective supply ports 35 of the metal windows 32A to 32F.

ガスの流量を測定する工程では、金属窓３２を複数のエリアに分け、同一エリア内の金属窓３２の供給口３５に流れるガスの流量を同時に測定可能である。 In the step of measuring the gas flow rate, the metal window 32 is divided into a plurality of areas, and the flow rate of the gas flowing to the supply port 35 of the metal window 32 in the same area can be measured at the same time.

［測定結果］
金属窓３２を、図３に示す６エリア（Ｃエリア、ＭＬエリア、ＭＳエリア、ＯＣエリア、ＯＬＳエリア、ＯＳＳエリア）に分け、同一エリア内の金属窓３２の供給口３５に流れるガス流量を同時に測定した結果について、図５を参照して説明する。図５は、実施形態に係る流量計２００によるガス流量の測定結果と計算結果との一例を示す図である。 [Measurement result]
The metal window 32 is divided into 6 areas (C area, ML area, MS area, OC area, OLS area, OSS area) shown in FIG. 3, and the gas flow rate flowing to the supply port 35 of the metal window 32 in the same area is simultaneously applied. The measurement results will be described with reference to FIG. FIG. 5 is a diagram showing an example of a measurement result and a calculation result of a gas flow rate by the flow meter 200 according to the embodiment.

図５（ａ）は、Ｃエリア内の金属窓３２の供給口３５に流れるガス流量を同時に測定した結果である流量計２００の実測値を示す。図５（ｂ）は、図５（ａ）の測定結果を得るために実際に不活性ガス供給源６７から供給した不活性ガスの総流量値と同じ流量のガスをＣエリア内の金属窓３２に供給することを条件にシミュレーションを行ったときのシミュレーション結果の計算値を示す。いずれも、Ｃエリアの同一エリア１内の金属窓３２のパーツＣ１～Ｃ４の供給口３５の末端部３５ａに同時に流れるガスの流量を求める。 FIG. 5A shows an actually measured value of the flow meter 200, which is the result of simultaneously measuring the gas flow rate flowing through the supply port 35 of the metal window 32 in the C area. FIG. 5 (b) shows a metal window 32 in the C area in which the gas having the same flow rate as the total flow value of the inert gas actually supplied from the inert gas supply source 67 in order to obtain the measurement result of FIG. 5 (a) is used. The calculated value of the simulation result when the simulation is performed on the condition that the gas is supplied to is shown. In each case, the flow rate of the gas simultaneously flowing to the terminal portion 35a of the supply port 35 of the parts C1 to C4 of the metal window 32 in the same area 1 of the C area is obtained.

この結果、図５（ａ）及び（ｂ）の縦軸に示す供給口３５の末端部３５ａを流れる流量は、図５（ａ）の実測値と図５（ｂ）の計算値とでほぼ一致した。これにより、実施形態に係る流量測定方法の有効性が確認できた。また、Ｃエリア内の金属窓３２のパーツＣ１～Ｃ４の供給口３５に均等にガスが供給されていることが分かった。以上から、本実施形態に係る流量測定方法によれば、分岐ガス配管５２により分流され、処理室Ｓ内に流れるガスの流量を精度良く測定することができる。 As a result, the flow rate flowing through the terminal portion 35a of the supply port 35 shown on the vertical axis of FIGS. 5 (a) and 5 (b) is almost the same as the measured value of FIG. 5 (a) and the calculated value of FIG. 5 (b). did. As a result, the effectiveness of the flow rate measurement method according to the embodiment was confirmed. Further, it was found that the gas was evenly supplied to the supply ports 35 of the parts C1 to C4 of the metal window 32 in the C area. From the above, according to the flow rate measuring method according to the present embodiment, it is possible to accurately measure the flow rate of the gas that is divided by the branch gas pipe 52 and flows into the processing chamber S.

なお、図２に示すように、パーツＣ１、Ｃ３は、パーツＣ２、Ｃ４よりも面積が小さい。その他のエリアでは、金属窓３２の各パーツの面積は概ね同じである。そこで、パーツＣ１、Ｃ３には、図４（ｂ）に示すオリフィス１０５を設けた機構を使用し、パーツＣ２、Ｃ４には、図４（ａ）に示すオリフィス１０５を設けない機構を使用する。これにより、パーツＣ２、Ｃ４よりも面積の小さいパーツＣ１、Ｃ３の供給口３５の基端部３５ｂの穴をオリフィス１０５で制御し、パーツＣ１、Ｃ３に供給するガスの流量を絞った。 As shown in FIG. 2, the parts C1 and C3 have a smaller area than the parts C2 and C4. In other areas, the area of each part of the metal window 32 is substantially the same. Therefore, the parts C1 and C3 use the mechanism provided with the orifice 105 shown in FIG. 4B, and the parts C2 and C4 use the mechanism not provided with the orifice 105 shown in FIG. 4A. As a result, the hole of the base end portion 35b of the supply port 35 of the parts C1 and C3 having a smaller area than the parts C2 and C4 was controlled by the orifice 105, and the flow rate of the gas supplied to the parts C1 and C3 was reduced.

この結果、図５（ａ）及び（ｂ）において、パーツＣ２、Ｃ４の供給口３５の末端部３５ａに流れるガスの流量（Ｌ／ｍｉｎ）は、パーツＣ１、Ｃ３の供給口３５の末端部３５ａに流れるガスの流量（Ｌ／ｍｉｎ）よりも多くなった。 As a result, in FIGS. 5A and 5B, the flow rate (L / min) of the gas flowing to the terminal portion 35a of the supply port 35 of the parts C2 and C4 is the terminal portion 35a of the supply port 35 of the parts C1 and C3. It became larger than the flow rate (L / min) of the gas flowing to.

例えば、基板処理装置１００の組み立て時、本来は、パーツＣ２、Ｃ４に図４（ａ）に示すオリフィス１０５を設けない機構を取り付け、パーツＣ１、Ｃ３に図４（ｂ）に示すオリフィス１０５を設けた機構を取り付ける。ところが、パーツＣ１、Ｃ３に図４（ａ）に示すオリフィス１０５を設けない機構を取り付け、パーツＣ２、Ｃ４に図４（ｂ）に示すオリフィス１０５を設けた機構を取り付けるミスをすることがある。この場合、本実施形態に係る流量測定方法により求めた、パーツＣ２、Ｃ４の供給口３５に流れるガスの流量の測定値は、パーツＣ１、Ｃ３の供給口３５に流れるガスの流量の測定値よりも小さい値を持つ。 For example, at the time of assembling the substrate processing apparatus 100, a mechanism that does not originally provide the orifice 105 shown in FIG. 4A is attached to the parts C2 and C4, and the orifice 105 shown in FIG. 4B is provided in the parts C1 and C3. Install the mechanism. However, there may be a mistake in attaching the mechanism without the orifice 105 shown in FIG. 4A to the parts C1 and C3, and attaching the mechanism provided with the orifice 105 shown in FIG. 4B to the parts C2 and C4. In this case, the measured value of the flow rate of the gas flowing through the supply port 35 of the parts C2 and C4 obtained by the flow rate measuring method according to the present embodiment is the measured value of the flow rate of the gas flowing through the supply port 35 of the parts C1 and C3. Also has a small value.

つまり、図５（ａ）のパーツＣ１、Ｃ３とパーツＣ２、Ｃ４の棒グラフの大小関係が、現在の図５（ａ）の棒グラフと逆転する。これにより、作業者は、パーツＣ１、Ｃ３とパーツＣ２、Ｃ４において分岐ガス配管５２の取り付け位置に誤りがあることを発見できる。 That is, the magnitude relationship between the parts C1 and C3 of FIG. 5A and the bar graphs of parts C2 and C4 is reversed from the current bar graph of FIG. 5A. As a result, the operator can discover that there is an error in the mounting position of the branch gas pipe 52 in the parts C1 and C3 and the parts C2 and C4.

以上から、本実施形態に係る流量測定方法によれば、基板処理装置１００の製造工程においてガス配管等の組み立てミスを検知することができる。また、例えば、組み立てミスを検知するための閾値を予め設定し、制御装置９０が、本実施形態に係る流量測定方法により測定したガス流量の測定値（実測値）と閾値とを自動で照合してもよい。制御装置９０は、測定値が閾値と所定以上ずれている場合に、組み立てにミスが発生していると自動で判定してもよい。 From the above, according to the flow rate measuring method according to the present embodiment, it is possible to detect an assembly error of the gas pipe or the like in the manufacturing process of the substrate processing apparatus 100. Further, for example, a threshold value for detecting an assembly error is set in advance, and the control device 90 automatically collates the measured value (measured value) of the gas flow rate measured by the flow rate measuring method according to the present embodiment with the threshold value. You may. The control device 90 may automatically determine that an assembly error has occurred when the measured value deviates from the threshold value by a predetermined value or more.

図６は、実施形態に係る各エリア（Ｃエリア、ＭＬエリア、ＭＳエリア、ＯＣエリア、ＯＬＳエリア、ＯＳＳエリア）について、本実施形態に係る流量測定方法により測定した各同一エリアの各パーツのガス流量の測定値（実測値）の一例を示す図である。この実験では、不活性ガスの替わりにドライエアーを供給した。 FIG. 6 shows the gas of each part in the same area measured by the flow rate measuring method according to the present embodiment for each area (C area, ML area, MS area, OC area, OLS area, OSS area) according to the embodiment. It is a figure which shows an example of the measured value (measured value) of a flow rate. In this experiment, dry air was supplied instead of the inert gas.

図６（ａ）はＣエリアの各パーツＣ１～Ｃ４の金属窓３２Ａの供給口におけるガス流量の測定結果である。図６（ｂ）はＭＬエリアの各パーツＭＬ１～ＭＬ４の金属窓３２Ｂの供給口におけるガス流量の測定結果である。図６（ｃ）はＭＳエリアの各パーツＭＳ１～ＭＳ４の金属窓３２Ｃの供給口におけるガス流量の測定結果である。図６（ｄ）はＯＣエリアの各パーツＯＣ１～ＯＣ８の金属窓３２Ｄの供給口におけるガス流量の測定結果である。図６（ｅ）はＯＬＳエリアの各パーツＯＬＳ１、ＯＬＳ２の金属窓３２Ｅの供給口におけるガス流量の測定結果である。図６（ｆ）はＯＳＳエリアの各パーツＯＳＳ１、ＯＳＳ２の金属窓３２Ｆの供給口におけるガス流量の測定結果である。 FIG. 6A is a measurement result of the gas flow rate at the supply port of the metal window 32A of each part C1 to C4 in the C area. FIG. 6B is a measurement result of the gas flow rate at the supply port of the metal window 32B of each part ML1 to ML4 in the ML area. FIG. 6C is a measurement result of the gas flow rate at the supply port of the metal window 32C of each part MS1 to MS4 in the MS area. FIG. 6D is a measurement result of the gas flow rate at the supply port of the metal window 32D of each part OC1 to OC8 in the OC area. FIG. 6E is a measurement result of the gas flow rate at the supply port of the metal window 32E of each part OLS1 and OLS2 in the OLS area. FIG. 6F is a measurement result of the gas flow rate at the supply port of the metal window 32F of each part OSS1 and OSS2 in the OSS area.

この結果、図６（ｂ）～図６（ｆ）に示すいずれのエリアも同一エリア内の各パーツの測定値はほぼ一致した。図６（ａ）については、パーツＣ１、Ｃ３の流量の測定値はほぼ一致し、パーツＣ２、Ｃ４の流量の測定値はほぼ一致した。パーツＣ１、Ｃ３の流量の測定値とパーツＣ２、Ｃ４の流量の測定値とで差が生じているのは、前述したとおり、パーツＣ１、Ｃ３ではオリフィス１０５を使用してガスの流量を絞り、パーツＣ２、Ｃ４ではオリフィス１０５を使用しなかったために生じた差である。 As a result, the measured values of the parts in the same area were almost the same in all the areas shown in FIGS. 6 (b) to 6 (f). Regarding FIG. 6A, the measured values of the flow rates of the parts C1 and C3 were almost the same, and the measured values of the flow rates of the parts C2 and C4 were almost the same. The difference between the measured flow rate of parts C1 and C3 and the measured flow rate of parts C2 and C4 is caused by using the orifice 105 in parts C1 and C3 to throttle the gas flow rate. This is the difference caused by not using the orifice 105 in the parts C2 and C4.

以上に説明したように、本実施形態に係る流量測定方法及び基板処理装置によれば、分岐ガス配管により分流され、処理室内に流れる分岐後のガスの流量を精度良く測定することができる。また、基板処理装置１００の製造工程においてガス配管の組み立てミスを検知することができる。これにより、組み立て後の基板処理装置において、処理室内に設定された流量と異なる流量のガスを供給することを未然に防止できる。 As described above, according to the flow rate measuring method and the substrate processing apparatus according to the present embodiment, it is possible to accurately measure the flow rate of the gas after branching, which is divided by the branch gas pipe and flows into the processing chamber. Further, it is possible to detect an assembly error of the gas pipe in the manufacturing process of the substrate processing apparatus 100. As a result, it is possible to prevent the substrate processing apparatus after assembly from supplying gas with a flow rate different from the flow rate set in the processing chamber.

今回開示された実施形態に係る流量測定方法及び基板処理装置は、すべての点において例示であって制限的なものではないと考えられるべきである。実施形態は、添付の請求の範囲及びその主旨を逸脱することなく、様々な形態で変形及び改良が可能である。上記複数の実施形態に記載された事項は、矛盾しない範囲で他の構成も取り得ることができ、また、矛盾しない範囲で組み合わせることができる。 The flow rate measuring method and the substrate processing apparatus according to the embodiment disclosed this time should be considered to be exemplary and not restrictive in all respects. The embodiments can be modified and improved in various forms without departing from the scope of the appended claims and their gist. The matters described in the plurality of embodiments may have other configurations within a consistent range, and may be combined within a consistent range.

本開示の基板処理装置は、Atomic Layer Deposition(ALD)装置、Capacitively Coupled Plasma(CCP)、Inductively Coupled Plasma(ICP)、Radial Line Slot Antenna(RLSA)、Electron Cyclotron Resonance Plasma(ECR)、Helicon Wave Plasma(HWP)のいずれのタイプの装置でも適用可能である。 The substrate processing apparatus of the present disclosure includes Atomic Layer Deposition (ALD) apparatus, Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), Helicon Wave Plasma ( It is applicable to any type of device (HWP).

また、基板処理装置の一例としてプラズマ処理装置を挙げて説明したが、基板処理装置は、基板に所定の処理（例えば、成膜処理、エッチング処理等）を施す装置であればよく、プラズマ処理装置に限定されるものではない。 Further, although the plasma processing device has been described as an example of the substrate processing device, the substrate processing device may be any device as long as it is a device that performs a predetermined treatment (for example, film forming treatment, etching treatment, etc.) on the substrate. It is not limited to.

１１ 蓋
１４ 隔壁
１５ 本体
２０ 処理容器
３２、３２Ａ～３２Ｆ 金属窓
３３ 拡散室
３４ シャワーヘッド
３５ 金属窓の供給口
５２ 分岐ガス配管
６０ ガス供給部
６１Ａ～６１Ｆ 不活性ガス分岐配管
６３Ａ～６３Ｆ フローレシオコントローラ
６５ 分岐器
６６ 外部ガス配管
６７ 不活性ガス供給源
６８ 処理ガス配管
７０ 基板支持部
９０ 制御装置（制御部）
１００ 基板処理装置
１０１ シール部材
２００ 流量計
２００ａ 計測管
２０１ 流量測定治具
Ｌ、Ｌ１～Ｌ６ 分岐ガス配管
Ｓ 処理室 11 Closure 14 Partition 15 Main body 20 Processing container 32, 32A to 32F Metal window 33 Diffusion chamber 34 Shower head 35 Metal window supply port 52 Branch gas pipe 60 Gas supply section
61A to 61F Inert gas branch piping 63A to 63F Flow ratio controller 65 Turnout 66 External gas piping 67 Inert gas supply source 68 Processing gas piping 70 Board support 90 Control device (control unit)
100 Board processing device 101 Sealing member 200 Flow meter 200a Measuring tube 201 Flow measuring jig L, L1 to L6 Branch gas piping S Processing room

Claims (6)

ガスを供給するガス供給配管と、
前記ガス供給配管から分岐する複数の分岐ガス配管と、
前記複数の分岐ガス配管に連通する金属窓と、
前記金属窓の底部に配置され、前記金属窓から前記ガスを通すガス吐出孔を有するシャワーヘッドと、
を有する基板処理装置においてガスの流量を測定する流量測定方法であって、
複数の前記分岐ガス配管に連通する前記金属窓の供給口に流量計を配置し、前記流量計により前記金属窓の供給口に流れるガスの流量を測定する工程を有する、流量測定方法。 Gas supply piping that supplies gas and
A plurality of branched gas pipes that branch from the gas supply pipe, and
A metal window that communicates with the plurality of branched gas pipes,
A shower head located at the bottom of the metal window and having a gas discharge hole for passing the gas through the metal window.
It is a flow rate measuring method for measuring the flow rate of gas in a substrate processing apparatus having the above.
A flow rate measuring method comprising a step of arranging a flow meter at a supply port of the metal window communicating with a plurality of the branched gas pipes and measuring the flow rate of gas flowing through the supply port of the metal window by the flow meter. 前記ガスの流量を測定する工程は、
前記流量計を前記金属窓の供給口の末端部に配置する、
請求項１に記載の流量測定方法。 The step of measuring the flow rate of the gas is
The flow meter is placed at the end of the supply port of the metal window.
The flow rate measuring method according to claim 1. 前記ガスの流量を測定する工程は、
予め分けられた前記金属窓の複数のエリアについて、同一エリア内の前記金属窓の供給口に同時に流れるガスの流量の測定が可能である、
請求項１又は２に記載の流量測定方法。 The step of measuring the flow rate of the gas is
It is possible to measure the flow rate of gas simultaneously flowing to the supply port of the metal window in the same area for a plurality of areas of the metal window divided in advance.
The flow rate measuring method according to claim 1 or 2. 前記流量計は、前記金属窓の供給口から取り外しが可能である、
請求項１～３のいずれか一項に記載の流量測定方法。 The flow meter can be removed from the supply port of the metal window.
The flow rate measuring method according to any one of claims 1 to 3. 前記ガスの流量を測定する工程は、
大気環境下で前記金属窓の供給口に流れるガスの流量を測定する、
請求項１～４のいずれか一項に記載の流量測定方法。 The step of measuring the flow rate of the gas is
Measuring the flow rate of gas flowing through the supply port of the metal window in an atmospheric environment,
The flow rate measuring method according to any one of claims 1 to 4. ガスを供給するガス供給配管と、
前記ガス供給配管から分岐する複数の分岐ガス配管と、
前記複数の分岐ガス配管に連通する金属窓と、
前記金属窓の底部に配置され、前記金属窓から前記ガスを通すガス吐出孔を有するシャワーヘッドと、制御部と、を有し、
前記制御部は、
複数の前記分岐ガス配管に連通する前記金属窓の供給口に流量計を配置し、前記流量計により前記金属窓の供給口に流れるガスの流量を測定する工程を制御する、基板処理装置。 Gas supply piping that supplies gas and
A plurality of branched gas pipes that branch from the gas supply pipe, and
A metal window that communicates with the plurality of branched gas pipes,
It has a shower head, which is arranged at the bottom of the metal window and has a gas discharge hole for passing the gas from the metal window, and a control unit.
The control unit
A substrate processing apparatus for arranging a flow meter at a supply port of the metal window communicating with a plurality of branch gas pipes and controlling a process of measuring the flow rate of gas flowing through the supply port of the metal window by the flow meter.
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