JP2022095477A - Imaging element, manufacturing method thereof, and imaging device - Google Patents

Abstract

To provide an imaging element in which a signal processing unit is formed for each one or a small number of photoelectric conversion units.SOLUTION: An imaging element includes an output unit that is formed on a first surface of a first substrate having a photoelectric conversion unit that converts light into electric charge and a reading unit that reads a signal based on the charge converted by the photoelectric conversion unit, and outputs the signal read by the reading unit, a signal processing unit that includes a plurality of circuits arranged along a second surface intersecting the first surface and processes the signal based on the charge converted by the photoelectric conversion unit, and a connection unit that electrically connects the signal processing unit and the output unit.SELECTED DRAWING: Figure 2

Description

The present invention relates to an image pickup device, a method for manufacturing the image pickup device, and an image pickup device.

An image pickup device provided with a signal processing circuit such as an AD conversion circuit is known (for example, Patent Document 1). Conventionally, it has been required to improve the speed of signal processing.

Japanese Unexamined Patent Publication No. 2020-28098

According to the first aspect of the present invention, the image pickup element is on the first surface of a first substrate having a photoelectric conversion unit that converts light into electric charge and a reading unit that reads out a signal based on the charge converted by the photoelectric conversion unit. It includes an output unit that is formed and outputs a signal read by the reading unit, and a plurality of circuits arranged along a second surface that intersects the first surface, and is based on the charge converted by the photoelectric conversion unit. A signal processing unit that processes a signal and a connection unit that electrically connects the signal processing unit and the output unit are provided.
According to the second aspect of the present invention, in the method for manufacturing an image pickup element, a photoelectric conversion unit that converts light into electric charge and a reading unit that reads out a signal based on the electric charge converted by the photoelectric conversion unit are formed on a first substrate. That is, an output unit that outputs a signal read by the reading unit is formed on the first surface of the first board, and a signal processing unit including a plurality of circuits is formed along the second surface of the second substrate. To form a connection portion that is electrically connected to the signal processing unit and at least a part of which is exposed to the first side surface of the second substrate, the first side surface of the second substrate is connected to the first substrate. It is provided that the connection portion and the output portion are electrically connected by connecting to the first surface of the above.
According to the third aspect of the present invention, the image pickup apparatus includes the image pickup device of the first aspect and a generation unit that generates image data based on the signal output from the image pickup device.

The cross-sectional view schematically which shows the structure of the image pickup apparatus of 1st Embodiment. The figure which shows typically the structure of the image pickup element of 1st Embodiment. FIG. 2A is a plan view of the image pickup device as viewed from the image pickup surface side. 2 (b) and 2 (c) are cross-sectional views of a part of the image pickup device. The figure which shows an example of the schematic structure of a signal processing unit. FIG. 3 is a cross-sectional view of a part of the image pickup device of the first modification. FIG. 3 is a cross-sectional view of a part of the image pickup device of Modification 2. FIG. 3 is a cross-sectional view of a part of the image pickup device of Modification 3. The figure which shows a part of the image pickup element of the modification 4. The figure which shows a part of the image pickup element of the modification 5. The figure which shows an example of the manufacturing method of an image sensor. FIG. 9 is a diagram showing an example of a method for manufacturing an image sensor, following FIG. 9. FIG. 10 is a diagram showing an example of a method for manufacturing an image sensor, following FIG. FIG. 11 is a diagram showing an example of a method for manufacturing an image sensor, following FIG. FIG. 12 is a diagram showing an example of a method for manufacturing an image sensor, following FIG. 12. The figure which shows the modification 1 of the manufacturing method of an image pickup element. The figure which shows the modification 2 of the manufacturing method of an image pickup element.

(First Embodiment of Imaging Device)
FIG. 1 is a diagram showing a configuration example of a camera 1 which is a first embodiment of an image pickup apparatus.
In the X, Y, and Z directions indicated by the arrows in FIG. 1, the direction indicated by the arrows is the + direction. The X, Y, and Z directions are orthogonal to each other. Further, the X direction, the Y direction, and the Z direction shown in the following figures are also the same directions as the X direction, the Y direction, and the Z direction shown in FIG.

The camera 1 includes a photographing optical system (imaging optical system) 2, an image pickup element 3, an image pickup control unit 4, a memory 5, a display unit 6, and an operation unit 7. The photographing optical system 2 has a plurality of lenses including a focus adjusting lens (focus lens) and an aperture diaphragm, and forms a subject image on the image pickup element 3. The photographing optical system 2 may be detachable from the camera 1.

The image pickup element 3 is an image pickup element such as a CMOS image sensor or a CCD image sensor. The image pickup element 3 receives a light beam that has passed through the photographing optical system 2 and images a subject image formed by the photographing optical system 2. A plurality of pixels having a photoelectric conversion unit are arranged in a two-dimensional shape (row direction and column direction) in the image pickup device 3. The photoelectric conversion unit is composed of a photodiode (PD). The image pickup device 3 photoelectrically converts the received light to generate a signal, and outputs the generated signal to the image pickup control unit 4.

The memory 5 is a recording medium such as a memory card. Image data, a control program, and the like are recorded in the memory 5. The writing of data to the memory 5 and the reading of data from the memory 5 are controlled by the image pickup control unit 4. The display unit 6 displays an image based on the image data, information on shooting such as a shutter speed and an aperture value, a menu screen, and the like. The operation unit 7 includes various setting switches such as a release button, a power switch, and a switch for switching various modes, and outputs a signal based on each operation to the image pickup control unit 4.

The image pickup control unit 4 is composed of a processor such as a CPU, FPGA, and ASIC, and a memory such as a ROM and a RAM, and controls each part of the camera 1 based on a control program. The image pickup control unit 4 supplies a signal for controlling the image pickup element 3 to the image pickup element 3 to control the operation of the image pickup element 3. The image pickup control unit 4 causes the image pickup element 3 to take an image of the subject image when a still image is taken, a moving image is taken, or a through image (live view image) of the subject is displayed on the display unit 6. Output a signal.

The image pickup control unit 4 performs various image processing on the signal output from the image pickup element 3 to generate image data. The image pickup control unit 4 is also a generation unit 4 that generates image data, and generates still image data and moving image data based on the signal output from the image pickup element 3. The image processing includes image processing such as gradation conversion processing and color interpolation processing.

(First Embodiment of Image Sensor)
The configuration of the image pickup device 3 of the first embodiment will be described with reference to FIG. 2. FIG. 2A is a view of the image pickup device 3 of the first embodiment as viewed from the image pickup surface side, that is, from the + Z side of FIG. The image pickup device 3 has a plurality of pixels 11 arranged in the X direction and the Y direction. FIG. 2 shows a state in which 10 pixels 11 in the X direction and 8 pixels 11 in the Y direction are arranged in order to avoid complication of the drawing, but the pixels 11 are, for example, 1000 pixels in the X direction and the Y direction, respectively. It may be arranged over the above.
The X direction can be referred to as the first direction, and the Y direction can be referred to as the second direction.

A horizontal control unit HC is provided at an end portion in the −X direction of a region (pixel region) in which a plurality of pixels 11 are arranged, and a vertical control unit VC is provided at an end portion in the + Y direction. The horizontal control unit HC and the vertical control unit VC are collectively referred to as an element control unit CU.
As an example, each of the plurality of pixels 11 may have a spectral sensitivity characteristic defined by a so-called Bayer arrangement.
Further, some pixels 11 may be so-called image plane phase difference type focus detection pixels. Since the configuration of the pixel for focus detection is known, the description thereof is omitted in the present specification.

FIG. 2B is a diagram showing a cross section of the image sensor 3 in the YZ plane at the portion of the line segment A shown by the broken line in FIG. 2A. On the other hand, FIG. 2C is a diagram showing a cross section of the image sensor 3 in the XZ plane at the portion of the line segment B shown by the broken line in FIG. 2A. As an example, the image pickup device 3 includes a first substrate 10 made of a semiconductor such as silicon, a laminated portion 200M including a plurality of second substrates 20a to 20h laminated in the Y direction via an insulating member 27, and a semiconductor such as silicon. The third substrate 30 made of the above is a laminated type image pickup element laminated in the Z direction. FIG. 2C shows an XZ cross section of a portion of the second substrates 20a to 20h laminated as the laminated portion 200M including the second substrate 20d. The details of the laminated portion 200M will be described later.

The pixel 11 formed on the first substrate 10 includes a photoelectric conversion unit 13 made of a photodiode as an example, and the photoelectric conversion unit 13 photoelectrically converts light incident on the first substrate 10 from the + Z direction. On the incident side (+ Z side) of the light of the pixel 11, a microlens 15 for efficiently guiding the light incident on the pixel 11 to the photoelectric conversion unit 13 is provided. Further, a color filter 14 that defines the wavelength characteristics of the light incident on each photoelectric conversion unit 13 is provided between the photoelectric conversion unit 13 and the microlens 15.

Further, the first substrate 10 is provided with a reading unit 12 that outputs a signal based on the electric charge converted from the light by the photoelectric conversion unit 13. As an example, the reading unit 12 has a transfer transistor, a floating diffusion (FD), an amplification transistor, a selection transistor, and a reset transistor. In this case, the pixel 11 is configured as a so-called 4-transistor type CMOS image pickup pixel. ing. The pixel 11 may be a 3-transistor type CMOS image pickup pixel or the like.

An output unit 16 such as a metal plug is formed on the surface of the first substrate 10 on the −Z side (hereinafter referred to as “first surface” S1). The output unit 16 is electrically connected to the output side of the selection transistor constituting the reading unit 12, the output unit 16 is electrically connected to each reading unit 12, and the photoelectric conversion unit read by the reading unit 12 is used. A signal based on the charge converted in 13 is output.
The first surface S1 is a surface parallel to the XY plane.

The laminated portion 200M is formed by laminating a plurality of second substrates 20a to 20h similar to the second substrate 20d shown in FIG. 2C in the Y direction at predetermined intervals. An insulating member 27 is filled between the plurality of second substrates 20a to 20h. Further, the interval of arrangement (stacking) of the plurality of second substrates 20a to 20h in the Y direction is equal to the interval of arrangement of the photoelectric conversion unit 13 formed on the first substrate 10 in the Y direction, and the interval of arrangement of the output unit 16 is equal to that of the output unit 16. It is also equal to the interval of arrangement in the Y direction.
In addition, in this specification, an interval means a center interval between a plurality of objects.

As an example, the distance between the arrangements of the photoelectric conversion units 13 formed on the first substrate 10 in the X direction and the Y direction is about 0.5 to 20 μm. The length of the second substrate 20a to 20h in the Z direction is about 5 to 500 μm.

As shown in FIGS. 2 (b) and 2 (c), the signal processing unit 21, the current source 22, and the signal processing unit 21 and the current source 22 are electrically mounted on one second substrate 20a to 20h. Wiring 36 and the like to be connected are arranged.
FIG. 3 is a diagram showing an example of a schematic configuration of the signal processing unit 21. The signal processing unit 21 includes a plurality of circuits such as an analog-to-digital conversion circuit (AD conversion circuit) 211 and a temporary storage circuit 212, and the plurality of circuits are arranged along the XZ plane.

Explaining with reference to FIG. 2B, a plurality of circuits such as the AD conversion circuit 211 and the temporary storage circuit 212 included in the signal processing unit 21 are shown by a broken line, which is one of the XZ planes. It is arranged along the surface S2. The second surface S2 is an XZ plane that includes not only the surface on the −Y side of the second substrate 20d but also the surface on the −Y side of the second substrate 20d and extends in the ± Z direction and the ± Y direction.
The second surface S2 intersects the first surface S1 of the first substrate 10. That is, the second surface S2 and the first surface S1 are not parallel to each other.

The image pickup device 3 of the first embodiment has a plurality of second substrates 20a to 20h arranged at different positions in the Y direction, and the signal processing unit 21 and each of the plurality of second substrates 20a to 20h have a signal processing unit 21 and a plurality of second substrates 20a to 20h. Since the current source 22 and the like are formed, a plurality of second surfaces S2 also exist.
However, in order to avoid complication, FIG. 2B has a broken line indicating the second surface S2 only on the surface of the second substrate 20d on the −Y side.

As shown in FIG. 2C, a plurality of signal processing units 21, a current source 22, a wiring 36, and the like are arranged side by side in the X direction on each of the plurality of second substrates 20a to 20h. There is. Further, a horizontal control circuit 29h electrically connected to the horizontal control unit HC is arranged at the end of the second substrate 20a to 20h in the −X direction.

The spacing between the arrangements of the plurality of signal processing units 21 and the current source 22 in the X direction on the second substrates 20a to 20h is the same as the spacing between the arrangements of the photoelectric conversion units 13 formed on the first substrate 10 in the X direction. It is also equal to the spacing of the arrangement of the output units 16 in the X direction. Further, as described above, the interval between the arrangements of the plurality of second substrates 20a to 20h in the Y direction is equal to the interval between the arrangements of the photoelectric conversion units 13 formed on the first substrate 10 in the Y direction.

Therefore, in the image sensor 3 of the first embodiment, one signal processing unit 21 is laminated along the X direction and the Y direction, respectively, corresponding to one of the photoelectric conversion units 13 on the first substrate 10. It is arranged in the unit 200M. With this configuration, the signal generated by the photoelectric conversion by the photoelectric conversion unit 13 of each pixel 11 can be output to the signal processing unit 21 at high speed and the signal can be processed at high speed.

The analog signal output from the output unit 16 of the first board 10 is input to the corresponding signal processing unit 21 via the first terminal 24 and the first connection line 23, respectively. That is, the first terminal 24 and the first connection line 23 are connection portions that electrically connect the signal processing unit 21 and the output unit 16 arranged along the second surface S2 on the second substrate 20a to 20h. be. Therefore, in the following, the first terminal 24 and the first connection line 23 are collectively referred to as a “connection portion”.

The first terminal 24 is made of a metal plug or the like formed in the vicinity of the end face of the laminated portion 200M in the + Z direction, and is mechanically and electrically connected to the output portion 16. The first connection line 23 is a wire such as metal whose one end is mechanically and electrically connected to the first terminal 24, and the other end is connected to the signal input unit of the signal processing unit 21.

The signal processing unit 21 receives a control signal and a lamp signal from the horizontal control circuit 29h via wirings 281, 282, and 283 extending from the horizontal control circuit 29h (hereinafter, wirings 281 to 283 are collectively referred to as wiring 28). , And signals such as coded signals are supplied. Further, the signal processing unit 21 is supplied with a current from the current source 22 via the wiring 36 formed along the second surface S2 as an example.

The signal processing unit 21 transmits a digital signal that has undergone signal processing such as AD conversion via a second connection line 25 such as metal wiring, a second terminal 26 such as a metal plug, and a third terminal 32 such as a metal plug. The output is output to the second circuit 31 provided on the third substrate 30. The second circuit 31 is provided along the + Z side surface (hereinafter referred to as “third surface” S3) of the third substrate 30.

Hereinafter, the second connection line 25 and the second terminal 26 are collectively referred to as a “second connection portion”.
The third surface S3 is on the side opposite to the first substrate 10 with respect to the signal processing unit 21, and is a surface that intersects with the second surface S2. That is, the third surface S3 and the second surface S2 are not parallel to each other.

The second circuit 31 outputs the digital signals output from the plurality of signal processing units 21 to the outside of the image pickup element 3 such as the image pickup control unit 4 shown in FIG. 1, for example.
Further, the second circuit 31 is a current through a terminal formed in the laminated portion 200M like the second terminal 26 formed on the third substrate 30 like the third terminal 32 and a wiring. A current is supplied to the source 22.
The second circuit 31 may further include a memory circuit that temporarily stores the digital signal output from the signal processing unit 21, and is a circuit that performs signal processing such as compression or noise removal on the digital signal. May include.

As shown in FIG. 2B, a substrate 20z including a vertical control circuit 29v is arranged at an end portion of the laminated portion 200M in the + Y direction. The substrate 20z is a substrate extending in the X direction and the Z direction similarly to the second substrates 20a to 20h. The vertical control circuit 29v is electrically connected to the vertical control unit VC via a connection portion similar to the connection portion (first terminal 24 and first connection line 23) described above. Further, the vertical control circuit 29v is electrically connected to the second circuit 31 via the same connection portion as the above-mentioned second connection portion (second connection line 25 and second terminal 26).

The insulating member 27 is located between the + Z direction ends of the second substrates 20a to 20h and the substrate 20z and the first substrate 10, except for portions where terminals such as the output unit 16 and the first terminal 24 are arranged. Is filled. Further, except for the portion where terminals such as the second terminal 26 and the third terminal 32 are arranged between the end portions of the second substrates 20a to 20h and the substrate 20z in the −Z direction and the third substrate 30. , The insulating member 27 is filled.

(Image sensor of Modification 1)
Since many parts of the configuration of the image pickup device of the image pickup device of the first modification are the same as the configuration of the image pickup device of the first embodiment described above, the differences from the image pickup device of the first embodiment will be described below. , The common configurations are designated by the same reference numerals and the description thereof will be omitted as appropriate.
The view of the image pickup device of the modified example 1 from the + Z direction is the same as the view of the image pickup device 3 of the first embodiment shown in FIG. 2A from the + Z direction.

FIG. 4 is a diagram showing a cross section of the image pickup device of Modification 1 in the XZ plane at the portion of the line segment B shown by the broken line in FIG. 2 (a), and is a diagram of the image pickup device of the first embodiment described above. 2 (c) is a diagram showing a cross-sectional view similar to that shown in 2 (c).

In the image pickup device of the first modification, in the plurality of second substrates 20a to 20h such as the second substrate 20d, the size of the signal processing units 21a and 21b in the X direction is included in the pixel 11 on the first substrate 10. It is set to be larger than the interval of arrangement of the photoelectric conversion unit 13 in the X direction. The two signal processing units 21a and 21b are arranged at different positions in the Z direction. In other words, the Z direction is a direction within the second surface S2 and intersects with the first surface S1, and can also be called a third direction.

Of these, the signal processing unit 21a is connected to one (16a) of two output units 16a and 16b adjacent to each other in the X direction by a connection unit (first terminal 24a and first connection line 23a). The signal processing unit 21b is connected to the other (16b) of the two output units 16a and 16b adjacent to each other in the X direction by a connection unit (first terminal 24b and first connection line 23b).

In the image pickup device of the first modification, since the plurality of signal processing units 21a and 21b are arranged at different positions in the Z direction, the size of each signal processing unit 21a and 21b in the X direction is set on the first substrate 10. The distance between the arrangements of the photoelectric conversion units 13 in the X direction can be made larger. As a result, the signal processing units such as the signal processing units 21a and 21b can be designed and manufactured with a sufficient space, so that the signal processing unit with further reduced noise can be realized.

Also in the image pickup device of the first modification, the two current sources 22 that supply current to the two signal processing units 21a and 21b are arranged at the same position in the Z direction. The odd-numbered current source 22 counting from the −X side end is connected to the signal processing unit 21b by the wiring 36b, and the even-numbered current source 22 counting from the −X side end is connected to the signal processing unit 21b by the wiring 36a. It is connected to the signal processing unit 21a.
However, the two current sources 22 that supply current to the two signal processing units 21a and 21b may also be arranged at different positions in the Z direction.

In the above, it is assumed that the number of signal processing units 21a and 21b arranged at different positions in the Z direction is two. However, the number is not limited to two, and a larger number of signal processing units 21a and 21b may be arranged at different positions in the Z direction, that is, arranged side by side in the Z direction. In this case, the width of the signal processing units 21a and 21b in the X direction may be set to be larger than twice the interval of the arrangement of the photoelectric conversion units 13 in the first substrate 10 in the X direction.

(Image sensor of Modification 2)
Since many parts of the configuration of the image pickup device of the image pickup device of the second modification are the same as the configuration of the image pickup device of the first embodiment described above, the differences from the image pickup device of the first embodiment will be described below. , The common configurations are designated by the same reference numerals and the description thereof will be omitted as appropriate.
The view of the image pickup device of the modified example 2 from the + Z direction is the same as the view of the image pickup device 3 of the first embodiment shown in FIG. 2A from the + Z direction.

FIG. 5 is a diagram showing a cross section of the image pickup device of the modified example 2 in the YZ plane at the portion of the line segment A shown by the broken line in FIG. 2 (a), and is a diagram of the image pickup device of the first embodiment described above. 2 (b) is a diagram showing a cross-sectional view similar to that shown in 2 (b).
In FIG. 5, unlike FIGS. 2 (b), 2 (c) and 4, in order to ensure the visibility of the reference numerals attached in the drawings, the portion where the insulating member 27 is shown is shown. The entry of dots is omitted.

In the image pickup device of the second modification, the plurality of second substrates 20a and 20e including the signal processing units 21c to 21f and the current sources 22c to 22f are the photoelectric conversion units 13 and the photoelectric conversion unit 13 on the first substrate 10 in the Y direction. The output units 16 are arranged at an interval four times the interval of the arrangement in the Y direction. On the second substrates 20a and 20e, four signal processing units 21c to 21f and four current sources 22c to 22f are arranged at different positions in the Z direction. In other words, the Z direction is a direction within the second surface S2 and intersects with the first surface S1, and can also be called a third direction.

Although not shown in FIG. 5, as in the case of the second substrate 20d in the first embodiment shown in FIG. 2 (c), the horizontal control circuit 29h is attached to the ends of the second substrates 20a and 20e in the −X direction. Is placed. Then, signals such as a control signal, a lamp signal, and a code signal are supplied from the horizontal control circuit 29h to the signal processing units 21c to 21f via the four wirings 28c to 28f extending from the horizontal control circuit 29h.

The plurality of signal processing units 21c to 21f included in the second substrate 20a are different output units 16c to arranged along the Y direction via different first connection lines 23c to 23f and first terminals 24c to 24f. It is connected to 16f. That is, the signal output from the output unit 16c is input to the signal input unit of the signal processing unit 21c via the first terminal 24c and the first connection line 23c. Further, the signal output from the output unit 16d is input to the signal input unit of the signal processing unit 21d via the first terminal 24d and the first connection line 23d.

Similarly, the signal output from the output unit 16e is input to the signal input unit of the signal processing unit 21e, and the signal output from the output unit 16f is input to the signal input unit of the signal processing unit 21f.
The output signals output from the respective signal processing units 21c to 21f are the third terminals formed on the third substrate 30 via the second connection lines 25c to 25f and the second terminals 26c to 26f, which are different from each other. It is transmitted to 32c to 32f and input to the second circuit 31. The second circuit 31 is the same as that in the first embodiment described above.

The portion of the plurality of first connection lines 23c to 23f extending in the Z direction and the distance between the first terminals 24c to 24f in the Y direction are the photoelectric conversion unit 13 and the output formed on the first substrate 10. It is substantially equal to the interval of arrangement of the portions 16c to 16f in the Y direction.
Further, the plurality of signal processing units 21c to 21f have the photoelectric conversion units on the first substrate 10 on the second substrates 20a and 20e, similarly to the signal processing units 21 in the first embodiment shown in FIG. 2 (c). A plurality of 13 are arranged in the X direction at the same interval as the arrangement in the X direction. Each of the plurality of signal processing units 21c to 21f arranged in the X direction is connected to the corresponding output units 16 in the same manner as described above.

Therefore, also in the second modification, similarly to the first embodiment and the first modification described above, one signal processing unit 21c to each corresponds to one of the respective photoelectric conversion units 13 on the first substrate 10. 21f is arranged in the laminated portion 200M.

The interval between the arrangements of the plurality of second substrates 20a, 20e, etc. in the Y direction is not limited to four times the interval between the arrangements of the photoelectric conversion unit 13 and the output unit 16 in the Y direction. It may be m times (m is an integer of 2 or more) the interval between the arrangements of 13 and the output unit 16 in the Y direction.
In this case, m signal processing units 21c to 21f are arranged side by side at different positions in the Z direction on the second substrates 20a and 20e, respectively. Then, the m signal processing units 21c to 21f and the m output units 16c to 16f arranged along the Y direction are connected to each other (first connection line 23c to 23f, first terminal 24c to 24f). Connect electrically with.

Further, also in the second modification, the size of the signal processing units 21c to 21f in the X direction is larger than the interval of the arrangement of the photoelectric conversion units 13 in the first substrate 10 in the X direction, as in the above-mentioned modification 1. You may. In this case, in order to avoid overlapping of the signal processing units 21c to 21f in the X direction, the signal processing unit 21c connected to one of the two output units 16 adjacent to each other in the X direction is similar to the above-mentioned modification 1. ~ 21f and the signal processing units 21c ~ 21f connected to the other are arranged at different positions in the Z direction.

(Image sensor of Modification 3)
Since many parts of the configuration of the image pickup device of the image pickup device of the third modification are the same as the configuration of the image pickup device of the first embodiment described above, the differences from the image pickup device of the first embodiment will be described below. , The common configurations are designated by the same reference numerals and the description thereof will be omitted as appropriate.
The view of the image pickup device of the modified example 3 from the + Z direction is the same as the view of the image pickup device 3 of the first embodiment shown in FIG. 2A from the + Z direction.

FIG. 6 is a diagram showing a cross section of the image pickup device of the modified example 3 in the YZ plane at the portion of the line segment A shown by the broken line in FIG. 2 (a), and is a diagram of the image pickup device of the first embodiment described above. 2 (b) is a diagram showing a cross-sectional view similar to that shown in 2 (b).

In the image pickup device of the third modification, the second substrate 20o including the signal processing unit 21 is arranged only at the end portion of the image pickup device in the −Y direction. The configuration of the second substrate 20o is the same as the configuration of the second substrate 20d in the first embodiment shown in FIGS. 2 (b) and 2 (c). Therefore, a plurality of signal processing units 21 are arranged in the X direction on the second substrate 20o at the same interval as the arrangement of the photoelectric conversion units 13 in the first substrate 10 in the X direction.

In the image pickup device of the third modification, the signal line DL extending in the Y direction along the first surface S1 is X at the same interval as the arrangement interval of the photoelectric conversion unit 13 in the first substrate 10 in the X direction. Multiple are arranged in the direction. One signal line DL is electrically connected to each reading unit 12 of a plurality of photoelectric conversion units 13 arranged along the Y direction. An output unit 16 is provided at each end of each signal line DL in the −Y direction, and the output unit 16 is electrically connected to the first terminal 24.

Therefore, the signal based on the electric charge converted from the light by each photoelectric conversion unit 13 is provided on the second substrate 20o via the signal line DL, the output unit 16, the first terminal 24, and the first connection line 23. It is input to the signal processing unit 21.
The digital signal AD-converted by the signal processing unit 21 is output to the second circuit 31 provided on the third substrate 30 via the second connection line 25, the second terminal 26, and the third terminal 32. To.

In the image pickup device of the third modification, one signal processing unit 21 is arranged corresponding to a plurality of photoelectric conversion units 13 arranged along the Y direction.
Also in the image pickup device of the modification 3, a plurality of output units 16 and signal processing units 21 are arranged along the X direction parallel to the first surface S1 and the second surface S2. Is the same as the image pickup device of the first embodiment and each modification described above.

(Image sensor of Modification 4)
Since many parts of the configuration of the image pickup device of the image pickup device of the modified example 4 are the same as the configuration of the image pickup device of the first embodiment described above, the differences from the image pickup device of the first embodiment will be described below. , The common configurations are designated by the same reference numerals and the description thereof will be omitted as appropriate.
The view of the image pickup device of the modified example 4 from the + Z direction is the same as the view of the image pickup device 3 of the first embodiment shown in FIG. 2A from the + Z direction.

FIG. 7 shows a cross-sectional view of the first surface S1 of the first substrate 10 included in the image pickup device of the modified example 4 as viewed from the −Z direction. In FIG. 7, the horizontal control unit HC and the vertical control unit VC are not shown.
In the image pickup device of the modified example 4, one output unit 16 is provided for each of a total of 16 photoelectric conversion units 13, four in the X direction and four in the Y direction. The reading unit 12 that reads signals from each of the 16 photoelectric conversion units 13 and the output unit 16 are electrically connected by wiring 17.
In the image sensor of Modification 4, each signal generated by photoelectric conversion of light by 16 photoelectric conversion units 13 connected to one output unit 16 has wiring 17 at different times as an example. It is output from the output unit 16 via the output unit 16.

Although not shown, on the −Z side of each output unit 16, FIGS. 2 (b) and 2 (c) are similar to the image pickup devices of the first embodiment, the modified example 1 and the modified example 2 described above. The connection portion (first connection line 23, first terminal 24) shown in the above, the laminated portion 200M, and the like are provided.
The spacing in the X and Y directions in which the plurality of connection units (first connection line 23, first terminal 24) and the signal processing unit 21 are arranged is the same as the distance between the arrangement of the plurality of output units 16, that is, It is four times the interval of the pixels 11.

In the image pickup device of the modified example 4, the number of signal processing units 21 can be reduced, and the cost of the image pickup device can be reduced as compared with the image pickup devices of the first embodiment, the modified example 1 and the modified example 2 described above. can.
The number of reading units 12 (photoelectric conversion units 13) connected to one output unit 16 by wiring 17 is not limited to the above-mentioned 4 × 4 = 16, and is arbitrary in both the X direction and the Y direction. It may be the number of.

For example, if the number of reading units 12 (photoelectric conversion units 13) connected to one output unit 16 by wiring 17 is n in the Y direction (n is an integer of 2 or more), Y of the plurality of output units 16 The interval in the direction is n times the interval in the Y direction of the arrangement of the plurality of output units 16.
Further, if the number of reading units 12 (photoelectric conversion units 13) connected to one output unit 16 by the wiring 17 is k in the X direction (k is an integer of 2 or more), X of the plurality of output units 16 The interval in the direction is k times the interval in the X direction of the arrangement of the plurality of output units 16.

(Image sensor of Modification 5)
Since many parts of the configuration of the image pickup device of the image pickup device of the modified example 5 are the same as the configuration of the image pickup device of the first embodiment described above, the differences from the image pickup device of the first embodiment will be described below. , The common configurations are designated by the same reference numerals and the description thereof will be omitted as appropriate.
The view of the image pickup device of the modified example 5 from the + Z direction is the same as the view of the image pickup device 3 of the first embodiment shown in FIG. 2A from the + Z direction.

FIG. 8 shows a cross-sectional view of the first surface S1 of the first substrate 10 included in the image pickup device of the modified example 5 as viewed from the −Z direction. In FIG. 8, the horizontal control unit HC and the vertical control unit VC are not shown.

In the image pickup device of the modified example 5, one reading unit 12 is provided for each of a total of four photoelectric conversion units 13, two in the X direction and two in the Y direction. In other words, a part of the reading unit 12 is shared by the four photoelectric conversion units 13.
As an example, in the reading unit 12, the transfer transistor is provided in each photoelectric conversion unit 13, and the FD, the amplification transistor, the selection transistor, and the reset transistor are shared by each photoelectric conversion unit 13.

An output unit 16 is provided corresponding to each reading unit 12.
In the image pickup device of the modified example 5, each signal generated by photoelectric conversion of light by the four photoelectric conversion units 13 connected to one reading unit 12 outputs the reading unit 12 at different times. It is output from the output unit 16 via the output unit 16.

Although not shown, on the −Z side of each output unit 16, similar to the image sensor of the above-mentioned modification 4, the intervals of arrangement of the plurality of output units 16 are the same in the X direction and the Y direction. , FIG. 2B, FIG. 2C, and the like are provided with connection portions (first connection line 23, first terminal 24), signal processing portions 21a to 21f, and the like.

In the image pickup device of the modified example 5, the number of signal processing units 21 (21a to 21f) can be reduced as compared with the photoelectric conversion unit 13, and the image pickup of the first embodiment, the modified example 1 and the modified example 2 described above can be performed. It is possible to reduce the cost of the image sensor as compared with the element.
The number of photoelectric conversion units 13 connected to one reading unit 12 is not limited to the above-mentioned 2 × 2 = 4, and may be any number in both the X direction and the Y direction.

Although the image pickup device 3 of the first embodiment and each modification is configured to have the third substrate 30, it does not necessarily have to have the third substrate 30.
In this case, for example, the circuit corresponding to the second circuit 31 may be divided into a plurality of circuits and formed in the vicinity of the end portions of the second substrates 20a to 20h in the −Z direction. Then, a plurality of second substrates 20a to 20h may be electrically connected to each other by a TSV (Through Silicon VIA) or the like to form a circuit corresponding to the second circuit 31.

In the image pickup device 3 of the first embodiment and each modification as described above, it is assumed that the horizontal control unit HC and the vertical control unit VC are provided on the first substrate 10. However, the horizontal control unit HC and the vertical control unit VC may be formed on the third substrate 30, or may be divided into a plurality of parts and formed on each of the plurality of second substrates 20a to 20h. Alternatively, a part of them may be formed on the third substrate 30, and the rest may be divided into a plurality of pieces to be formed on each of the plurality of second substrates 20a to 20h.

In this case, a metal plug or the like different from the output unit 16 described above, and a plurality of connection lines and connection terminals different from the first connection line 23 and the first terminal 24 described above are formed to form the second substrate 20a. A plurality of control signals are sent from about 20 hours to the reading unit 12 on the first substrate 10. Further, a connection line and a connection terminal different from the above-mentioned second connection line 25 and the second terminal 26, and a connection terminal different from the third terminal 32 are formed to form a second circuit on the third substrate 30. One or more signals for forming the above-mentioned control signal are transmitted from 31 to the second substrates 20a to 20h.

With such a configuration, it is possible to independently control the on / off of the reset transistor, the transfer transistor, the selection transistor, etc. included in each of the plurality of reading units 12 for each reading unit 12. Therefore, it is also possible to independently control the photoelectric conversion time (time from turning off the reset transistor to turning on the transfer transistor) of the plurality of photoelectric conversion units 16.

In the image sensor 3 of the first embodiment and each modification, an input terminal for inputting a control signal and the like and an output terminal for outputting a signal from the image sensor 3 are provided on the + Z side surface of the first substrate 10. It may be provided on the surface of the third substrate 30 on the −Z side. Alternatively, it may be provided on the side surface of the laminated portion 200M (end surface on the + Y side, the −Y side, the + X side, or the −X side).

In the image sensor 3 of the first embodiment and each modification as described above, even if at least the portions of the output unit 16 and the first terminal 24 which are a part of the connection unit are connected to each other include copper. good. With this configuration, the output unit 16 and the first terminal 24 can be joined at a low temperature as described later.

In the above-mentioned first embodiment and the image pickup device 3 of each modification, the current source 22 is provided corresponding to each of the signal processing units 21, but the current source 22 is a plurality of signal processing units 21. One may be provided for each. Further, the current source 22 may be provided in the second circuit 31.

In the above-mentioned first embodiment and the image pickup device 3 of each modification, the plurality of pixels 11 are arranged along the orthogonal X and Y directions, but the arrangement of the plurality of pixels 11 is the same. Not limited. That is, the above-mentioned X direction and Y direction may be two directions that are not orthogonal to each other.

Further, in the above-mentioned first embodiment and the image pickup element 3 of each modification, the second surface S2 is an XZ plane, and the Z direction is a direction orthogonal to the X direction and the Y direction, but the Z direction is It may be in a direction not orthogonal to the X direction or the Y direction. Even in this case, the angle (intersection angle) formed by the first surface S1 and the second surface S2 may be 80 ° or more and 90 ° or less.
When the X direction, the Y direction, and the Y direction are orthogonal to each other, the angle formed by the first surface S1 and the second surface S2 is 90 °.

(Effects of Embodiments of Image Sensors and Modifications)
(1) The image pickup device 3 of the first embodiment and each modification described above has a photoelectric conversion unit 13 that converts light into a charge and a reading unit 12 that reads out a signal based on the charge converted by the photoelectric conversion unit 13. An output unit 16 formed on the first surface S1 of the first substrate 10 and outputting a signal read by the reading unit 12, and a plurality of circuits (211) arranged along the second surface S2 intersecting the first surface S1. , 212), the signal processing units 21, 21a to 21f that process signals based on the charge converted by the photoelectric conversion unit 13, and the connection unit (first) that electrically connects the signal processing unit 21 and the output unit 16. 1 connection line 23, 23a to 23f, first terminal 24, 24a to 24f).
With this configuration, it is possible to realize the image pickup device 3 in which the signal processing units 21, 21a to 21f are formed for each one or a small number of photoelectric conversion units 13.

Further, with this configuration, the sizes of the signal processing units 21, 21a to 21f, etc. are set along the second surface S2 without being restricted by the arrangement interval of the photoelectric conversion unit 13 in the direction in the first surface S1. It can be largely set in a direction (Z direction or the like) that is a direction and intersects with the first surface S1. As a result, the size of circuit elements such as transistors included in the circuit constituting the signal processing unit and the interval between arrangements can be increased, and the image pickup device 3 in which noise is suppressed can be realized.

Since a signal processing circuit such as an AD conversion circuit requires a larger area than a photoelectric conversion unit and a reading unit, conventionally, it is not possible to form a signal processing circuit for each one or a small number of photoelectric conversion units. It was difficult.

(2) A second circuit 31 located on the opposite side of the first substrate 10 with respect to the signal processing unit 21 and arranged along the third surface S3 intersecting the second surface S2, and the signal processing unit 21 and the first. A second connection portion (second connection lines 25, 25a to 25f, second terminals 26a to 26f) for electrically connecting the circuit 31 of 2 may be further provided. With this configuration, the signal processed by the signal processing unit 21 arranged along the second surface S2 can be efficiently output via the second circuit 31.

(Example of manufacturing method of image sensor)
Hereinafter, an example of the method for manufacturing the image pickup device 3 of the above-mentioned first embodiment and each modification will be described with reference to FIGS. 9 to 13. In each of the drawings of FIGS. 9A to 13B, the X direction, the Y direction, and the Z direction in the state where the components shown in each figure are incorporated in the image sensor 3 are indicated by arrows. Shows.

First, a manufacturing process relating to the first substrate 10 will be described.
(Step 1)
As shown in FIG. 9A, which is a cross-sectional view of the first substrate 10 in the XZ plane, the electric charge converted by the photoelectric conversion unit 13 for converting light into an electric charge and the electric charge converted by the photoelectric conversion unit 13 on the first substrate 10. A reading unit 12 for reading a signal based on the above is formed. The reading unit 12 is formed on the first surface S1 side, which is the surface on the −Z side of the first substrate 10. Along with the formation of the reading unit 12, a horizontal control unit HC and a vertical control unit VC (not shown) are also formed on the first surface S1 side of the first substrate 10. Further, a color filter 14, a microlens 15, and the like are formed on the + Z side surface of the first substrate 10. Since the photoelectric conversion unit 13, the reading unit 12, the horizontal control unit HC, the vertical control unit VC, the color filter 14, the microlens 15, and the like can be formed by a known method, the description thereof will be omitted here.

(Step 2)
As shown in FIG. 9B, an output unit 16 electrically connected to the reading unit 12 is formed on the first surface S1 of the first substrate 10. The output unit 16 is formed by forming a metal film on the entire surface of the first surface S1 of the first substrate 10 and removing the metal film other than the portion corresponding to the output unit 16 by etching. After that, the first insulating film 27c made of an insulating material such as SiO2 is formed on the portion of the first surface S1 where the output portion 16 is not formed.

A first insulating film 27c is formed on the first surface S1 before the metal film, an opening is formed in a portion corresponding to the output portion 16 on the first insulating film 27c, and metal is placed in the opening. The output unit 16 may be formed by embedding it.
By the above steps, the first intermediate board 100 in which the photoelectric conversion unit 13, the reading unit 12, and the output unit 16 are formed on the first substrate 10 is completed.

Next, the manufacturing process of the above-mentioned laminated portion 200M will be described.
(Step 3)
As shown in FIG. 10A, a second substrate 20 made of a semiconductor such as silicon is prepared. As the second substrate 20, those having sizes in the X direction and the Y direction larger than those of the second substrates 20a to 20h included in the above-mentioned laminated portion 200M are used.

Then, the insulating members 27a and 27b are embedded in the regions on the −Y side surface of the second substrate 20, which are separated from each other in the Z direction and extend in the X direction, respectively.
FIG. 10B is a view of a cross section of the second substrate 20 in the CC line shown in FIG. 10A as viewed from the −X direction. The depth in the Y direction in which the insulating members 27a and 27b are embedded is, for example, about 1/5 to 5/4 of the distance between the plurality of output units 16 formed on the above-mentioned first intermediate substrate 100 in the Y direction.

The insulating members 27a and 27b can be embedded in the second substrate 20 by using a general lithography technique. That is, a resist is formed on the surface on the −Y side of the second substrate 20, and the resist formed in the region where the insulating members 27a and 27b should be embedded is removed by exposure and development. Then, using the remaining resist as a mask, the −Y side of the second substrate 20 is engraved by etching, and the engraved second substrate 20 is formed by embedding insulating members 27a and 27b such as SiO2. After that, if necessary, the insulating material such as SiO2 remaining on the −Y side surface of the second substrate 20 is removed.

(Step 4)
As shown in FIG. 10 (c), the signal processing unit 21, the current source 22, and the wirings 28 and 36 are located on the −Y side surface of the second substrate 20 where the insulating members 27a and 27b are not embedded. , And various circuits such as the horizontal control circuit 29h are formed. Since the surface on the −Y side of the second substrate 20 is the surface included in the above-mentioned second surface S2 in the image sensor 3 after completion, it can also be referred to as the second surface S2 of the second substrate 20.
Since the signal processing unit 21, the current source 22, the wirings 28 and 36, and the horizontal control circuit 29h can be formed by a known method, the description thereof is omitted here.

(Step 5)
As shown in FIGS. 11 (a) and 11 (b), the first connection line 23 and the second connection line 25 are formed on the second substrate 20. 11 (b) and FIGS. 11 (c) and 11 (d), which will be described later, are views of the cross section of the second substrate 20 shown in FIG. 11 (a) on the DD line as viewed from the −X direction.

After the completion of step 5, the entire surface of the second substrate 20 on the −Y side is covered with the second insulating film 27d and the third insulating film 27e, which will be described later. However, in FIG. 11A, in order to facilitate understanding, the second insulating film 27d and the third insulating film are provided in the vicinity of the + X side end and the −X side end. The illustration of 27e is omitted.

In step 5, first, a second insulating film 27d made of an insulating material such as SiO2 is formed on the second surface S2 of the second substrate 20 on which the signal processing unit 21 and the like are formed. Then, an opening is formed at a predetermined position of the second insulating film 27d by lithography, and a metal or the like is embedded in the formed opening.

Next, a metal film is formed on the surface of the second insulating film 27d, and the metal film other than the portions corresponding to the first connecting line 23 and the second connecting line 25 is removed by lithography. As a result, the first connecting line 23 and the second connecting line 25 are formed by the metal film remaining without being removed and the metal embedded in the above-mentioned opening.

After that, a third insulating film 27e made of an insulating material such as SiO2 is formed on the −Y side of the second insulating film 27d, the first connecting wire 23, and the second connecting wire 25.
The first connecting line 23 and the second connecting line 25 may be formed by a so-called dual damascene process.

(Step 6)
As shown in FIG. 11 (c), a first terminal 24 and a second terminal made of a metal such as copper are partially formed on the second insulating film 27d and the third insulating film 27e formed on the second substrate 20. The terminal 26 is formed. The first terminal 24 is mechanically connected to the + Z direction end of the first connection line 23, and the second terminal 26 is mechanically connected to the −Z direction end of the second connection line 25. It is formed at each position.

It should be noted that the + Z side end of the first terminal 24 is arranged on the −Z side of the + Z side end of the insulating member 27a, and the −Z side end of the second terminal 26 is the insulating member. The first terminal 24 and the second terminal 26 may be formed so as to be arranged on the + Z side of the end portion on the −Z side of 27b.

When forming the first terminal 24 and the second terminal 26, as an example, a resist is first formed on the upper surface (the surface on the −Y side) of the third insulating film 27e, and the resist is first formed in the XZ plane. An opening is formed at a position where the terminal 24 and the second terminal 26 should be formed. Then, using the resist as a mask, the third insulating film 27e and the second insulating film 27d at the position where the opening is formed are etched to a predetermined depth to form a cavity. Then, the hollow portion is filled with a metal such as copper to form the first terminal 24 and the second terminal 26. If necessary, the above-mentioned metal remaining on the third insulating film 27e (-Y side) may be removed.

(Step 7)
As shown in FIG. 11D, a fourth insulating film 27f made of an insulating material such as SiO2 is formed on the second substrate 20 on which the first terminal 24 and the second terminal 26 are formed, and then the second insulating film 27f is formed. The back surface (+ Y side surface) of the substrate 20 is polished to set the thickness of the second substrate 20 to a predetermined thickness. A substrate on which a signal processing unit 21, a current source 22, a first connection line 23, a second connection line 25, and second to fourth insulating films 27d to 27f are formed on the second substrate 20, and the back surface is polished. , Hereinafter referred to as a circuit board 200.

In the above-mentioned polishing of the back surface, the thickness of the circuit board 200 in the Y direction is equal to, for example, the distance between the plurality of output units 16 formed on the above-mentioned first intermediate substrate 100 in the Y direction. Set to.
Note that FIG. 11D shows a state in which the insulating member 27a and the insulating member 27b are exposed on the + Y side surface of the circuit board 200, but the insulating member 27a and the insulating member 27b are not necessarily the circuit board. It does not have to be exposed on the + Y side surface of 200.

FIG. 11 (e) is a view of the circuit board 200 as viewed from the −Y direction. In addition, also in FIG. 11 (e), as in FIG. 11 (a) described above, in order to facilitate understanding, the vicinity of the end portion on the + X side and the vicinity of the end portion on the −X side are the first. The illustration of the second to fourth insulating films 27d to 27f is omitted.

(Step 8)
As shown in FIG. 12A, a plurality of circuits-equipped substrates 200a to 200e are laminated in the Y direction and sequentially joined in a state where the positions are aligned in the X direction and the Z direction. Each of the plurality of circuit boards 200a to 200e is the circuit board 200 described above, and the second boards 20a to 20e included in each of the circuit boards 200a to 200e are the second board 20 described above. Further, a substrate 20z including a vertical control circuit 29v is arranged at an end portion on the + Y side of a plurality of substrates with circuits 200a to 200e, and is laminated and joined to the substrate with circuits 200a.

Since the substrate 20z including the vertical control circuit 29v may be manufactured by the same steps as those in steps 1 to 7 described above, the description of the manufacturing method will be omitted. The thickness of the substrate 20z in the Y direction may be thicker than that of the circuits 200a to 200e. Therefore, in the production of the substrate 20z, the back surface polishing in the above step 7 may be omitted.

The bonding of the plurality of circuit boards 200a to 200e is performed, for example, by heating the fourth insulating film 27f in one circuit board 200 and the second substrate 20 in the circuit boards 200 adjacent to each other in the −Y direction. This is performed by joining the insulating member 27a and the end face on the + Y side of the insulating member 27b.

Alternatively, the fourth insulating film 27f in one circuit board 200 and the + Y side end faces of the second substrate 20, the insulating member 27a, and the insulating member 27b in the circuit board 200 adjacent to each other in the −Y direction, respectively. By activating the surface of the above by plasma treatment or the like, the bonding may be performed at a low temperature.
A board in which a plurality of boards with circuits 200a to 200e and a board 20z are laminated in the Y direction is hereinafter referred to as a laminated board 200L.

(Step 9)
The end face on the + Z side of the laminated substrate 200L is polished to the first side surface ES1 which is the XY plane shown by the broken line in FIG. 12A, and the first terminal 24 and the insulating member 27a are exposed to the first side surface ES1. Similarly, the end surface on the −Z side of the laminated substrate 200L is polished to the second side surface ES2 which is the XY plane shown by the broken line in FIG. 12A, and the second terminal 26 and the insulating member 27b are attached to the second side surface ES2. Expose.

Prior to this polishing, the + Z side from the first side surface ES1 and the −Z side from the second side surface ES2 of the laminated substrate 200L may be cut.
If the first side surface ES1 in which the first terminal 24 and the insulating member 27a are exposed and the second side surface ES2 in which the second terminal 26 and the insulating member 27b are exposed can be formed in these cuttings, the above-mentioned polishing can be performed. It may be omitted.

The above-mentioned laminated portion 200M is obtained by polishing (or cutting) the laminated substrate 200L to the first side surface ES1 and the second side surface ES2.
FIG. 12B is a view of the laminated portion 200M viewed from the + Y direction. In addition, also in FIG. 12 (b), in the same manner as in FIG. 11 (e) described above, in order to facilitate understanding, the vicinity of the end portion on the + X side and the vicinity of the end portion on the −X side are the first. The illustration of the second to fourth insulating films 27d to 27f is omitted.

The first terminal 24 included in each of the second substrates 20a to 20e is exposed on the first side surface ES1 of the laminated portion 200M, which is the end surface of the second substrates 20a to 20e in the −Z direction. Further, the first terminal 24 is mechanically connected to the first connection line 23 as described above, that is, is also electrically connected. The first connection line 23 is electrically connected to the signal processing units 21 formed on the respective second substrates 20a to 20e.

Therefore, the first connection line 23 and the first terminal 24 form a connection portion that is electrically connected to the signal processing unit 21 and at least a part of which is exposed to the first side surface ES1 of the second substrates 20a to 20e. There is. Here, the portion (exposed portion) of the connecting portion exposed to the first side surface ES1 of the second substrates 20a to 20e is the + Z side surface of the first terminal 24.

Further, the second connection line 25 and the second terminal 26 are electrically connected to the signal processing unit 21, and form a connection portion in which at least a part thereof is exposed to the second side surface ES2 of the second substrates 20a to 20e. There is. Here, the portion (exposed portion) of the connecting portion exposed to the second side surface ES2 of the second substrates 20a to 20e is the surface on the −Z side of the second terminal 26.

In the above-mentioned steps 3 to 8, a large-area substrate may be prepared, and a plurality of the above-mentioned circuit-equipped substrates 200 may be formed on the large-area substrate along the X direction and the Z direction. Then, before the step 9, a large-area substrate may be cut and separated into a plurality of circuits-equipped substrates 200.

Next, the manufacturing process relating to the above-mentioned third substrate 30 will be described.
(Step 10)
As shown in FIG. 13A, a third substrate 30 made of a semiconductor such as silicon is prepared. The sizes of the third substrate 30 in the X direction and the Y direction are substantially the same as the sizes of the first intermediate substrate 100 described above.
Then, the second circuit 31 is formed on the third surface S3, which is the surface on the + Z side of the third substrate 30. Since the formation of the second circuit 31 can be performed by a known method, the description thereof is omitted here.

Further, as shown in FIG. 13A, a third terminal 32 and a fifth insulating film 27g electrically connected to the second circuit 31 are formed on the third surface S3 of the third substrate 30. .. The end face on the + Z side of the third terminal 32 is exposed without being covered with the fifth insulating film 27g. The formation of the third terminal 32 and the fifth insulating film 27g is performed in the same manner as the formation of the output unit 16 and the first insulating film 27c in the above-mentioned step 2.
A circuit board with a second circuit 31, a third terminal 32, and a fifth insulating film 27g formed on the third surface S3 of the third substrate 30 is hereinafter referred to as a third intermediate substrate 300.

(Step 11)
The first intermediate substrate 100, the laminated portion 200M, and the third intermediate substrate 300 manufactured by the above steps are joined.
FIG. 13B is a diagram showing the first intermediate substrate 100, the laminated portion 200M, and the third intermediate substrate 300 before joining. The insulating members 27a and 27a and the insulating films 27d to 27f in the laminated portion 200M shown in FIG. 12A and the like are integrally shown as the insulating member 27j in FIG. 13B.

The first surface S1 of the first substrate 10 constituting the first intermediate substrate 100 and the first side surface ES1 of the laminated portion 200M, that is, the first side surface of the second substrate 20 are joined. At this time, each of the plurality of output units 16 is mechanically connected to the corresponding first terminal 24, and is therefore also electrically connected.

The third surface S3 of the third substrate 30 constituting the third intermediate substrate 300 and the second side surface ES2 of the laminated portion 200M, that is, the second side surface of the second substrate 20 are joined. At this time, each of the plurality of second terminals 26 is mechanically connected to the corresponding third terminal 32, and is therefore also electrically connected.

The first insulating film 27c formed on the first intermediate substrate 100 and the fifth insulating film 27g formed on the third intermediate substrate 300 are integrated with the insulating member 27j in the laminated portion 200M by joining. The insulating member 27 is shown in FIGS. 2 (b) and 2 (c).

In the above-mentioned joining of the first surface S1 and the first side surface ES1 and the joining of the third surface S3 and the second side surface ES2, each joint portion may be heated and joined, and the surface of each joint portion is plasma. By activating by treatment or the like, joining may be performed at a low temperature.
Either of the above-mentioned joining of the first surface S1 and the first side surface ES1 and the joining of the third surface S3 and the second side surface ES2 may be performed first.

Through the above steps, the image pickup device 3 of the first embodiment shown in FIGS. 2 (a) to 2 (c) is completed.
In the above-mentioned step 4, the arrangement and shape of the signal processing unit 21, the current source 22, and the wirings 28 and 36 formed on the second substrate 20 are arranged and shaped as shown in FIG. The image pickup device 3 of the modification 1 shown in FIG. 4 can also be manufactured.

Further, in the above step 8, instead of laminating the plurality of circuit boards 200a to 200e and the substrate 20z in the Y direction, one circuit board 200 (200o) and the substrate 20z are laminated with an insulating substrate or the like. It is also possible to manufacture the image pickup device 3 of the modification 3 shown in FIG. 6 by laminating them together.

Further, in the above-mentioned step 2, the X-direction and the distance between the X-directions of the plurality of output units 16 to be formed are set to predetermined values, the positions are also set to predetermined positions, and one output unit 16 and a plurality of output units 16 are set. Wiring 17 that electrically connects to the reading unit 12 may be formed. Thereby, the first substrate 10 (first intermediate substrate 100) of the image pickup device of the modification 4 shown in FIG. 7 can be manufactured, that is, the image pickup device of the modification 4 can be manufactured. Since the formation of the wiring 17 can be performed by a known technique, the description thereof will be omitted.

Further, in the above-mentioned step 1, the plurality of photoelectric conversion units 13 are manufactured so as to share one reading unit 12, so that the first substrate 10 (first intermediate) of the image pickup element of the modification 5 shown in FIG. 8 is manufactured. The substrate 100) can be manufactured, that is, the image pickup device of the modification 5 can be manufactured. Since a technique for manufacturing a plurality of photoelectric conversion units 13 so as to share one reading unit 12 is known, the description thereof will be omitted.

(Modification 1 of the method for manufacturing an image sensor)
FIG. 14 is a diagram showing a modified example 1 of the manufacturing method of the image pickup device 3. The image pickup device 3 of the modification 2 shown in FIG. 5 can be manufactured by the manufacturing method of the modification 1. However, since most of the manufacturing method of the modified example 1 is common to the above-mentioned example of the manufacturing method, only the differences will be described below, and the common parts will be omitted.

14 (a) shows the second insulating film 27d, the third insulating film 27e, and the first insulating film 27d on the second substrate 20 after the steps up to 6 are completed in the same manner as in FIG. 11 (c). It shows a state in which the terminal 24c, the second terminal 26c, and the like are formed.
However, in the modified example 1, in order to manufacture the image pickup element 3 of the modified example 2 shown in FIG. 5, in the above-mentioned step 4, four signal processing units 21c to 21f and a current are placed on the second substrate 20. The sources 22c to 22f and the wirings 28c to 28f are formed at different positions in the Z direction, respectively.

Then, in the above-mentioned step 5, the first connection line 23 and the second connection line 25 that are electrically connected to the signal processing unit 21c are formed in the same manner as in the above-mentioned example of the manufacturing method.
In FIG. 14A, the first connection line 23 shown in FIG. 5 is divided into a first vertical connection line 23cv extending in the Y direction and a first horizontal connection line 23ch extending in the Z direction. It is shown separately. Similarly, the second connecting line 25 is divided into a second vertical connecting line 25cv extending in the Y direction and a second horizontal connecting line 25ch extending in the Z direction.

In the first modification, when the first vertical connection line 23cv and the second vertical connection line 25cv are formed in the above step 5, the first vertical connection line is electrically connected to each of the signal processing units 21d to 21f. The connecting lines 23dv1 to 23fv1 and the second vertical connecting lines 25dv1 to 25fv1 are formed.

In FIG. 14A, the second horizontal connection line 25ch is intended to clearly indicate that the first vertical connection lines 23dv1 to 23fv1 and the second vertical connection lines 25dv1 to 25fv1 are not electrically connected. It is divided and shown. However, in reality, the second horizontal connection line 25ch is continuous in the Z direction, and the second horizontal connection line 25ch has the first vertical connection lines 23dv1 to 23fv1 and the second vertical connection lines 25dv1 to 25fv1 + X. Detouring in the direction or -X direction.

(Step 6A)
A sixth insulating film 27h made of an insulating material such as SiO2 is formed on the third insulating film 27e (-Y side). Then, an opening is formed in the sixth insulating film 27h at a position corresponding to the above-mentioned first vertical connection lines 23dv1 to 23fv1 and the second vertical connection line 25dv1 to 25fv1 by lithography, and metal or the like is placed in the formed opening. Embed. As a result, the first extended vertical connection lines 23dv2 to 23fv2 and the second extended vertical connection lines 25dv2 to 25fv2 shown in FIG. 14B are formed.

After that, a first horizontal connection line 23 dh that is electrically connected to the first extension vertical connection line 23dv2 is formed on the sixth insulating film 27h (-Y side), and is electrically connected to the second extension vertical connection line 25dv2. A second horizontal connecting line 25 dh is formed.
Although the second horizontal connection line 25 dh is divided and shown in FIG. 14 (b), the second horizontal connection line 25 dh is also continuous in the Z direction as in the above-mentioned second horizontal connection line 25 ch. There is.

(Step 6B)
Subsequently, a seventh insulating film 27i made of an insulating material such as SiO2 is formed on the sixth insulating film 27h, the first horizontal connecting wire 23dh, and the second horizontal connecting wire 25dh (-Y side). Then, the first terminal 24d and the second terminal 26d are formed in the same method as the method in which the first terminal 24c and the second terminal 26c are formed in a part of the seventh insulating film 27i and the sixth insulating film 27h. do. The first terminal 24d is formed at a position where it is mechanically connected to the + Z side end of the first horizontal connection line 23dh, and the second terminal 26d is formed at a position where it is mechanically connected to the −Z side end of the second horizontal connection line 25dh.

By the above steps 6A and 6B, the first connection line 23d, the first terminal 24d, the second connection line 25d, and the second terminal 26d of the image pickup device 3 of the modification 2 shown in FIG. 5 are formed. To.
Then, by repeating the same steps as those in the above steps 6A and 6B two more times, the first connection lines 23e to 23f and the first terminal of the image pickup device 3 of the modification 2 shown in FIG. 5 are repeated. 24e to 24f, second connection lines 25e to 25f, and second terminals 26e to 26f can be formed.

By making the total thickness of the sixth insulating film 27h and the seventh insulating film 27i in the Y direction equal to the distance between the output units 16 on the first substrate 10 in the Y direction, the first terminal 24c to The Y-direction spacing of 24f can be made equal to the Y-direction spacing of the output unit 16 on the first substrate 10.
Further, the back surface (the surface in the + Y direction) of the second substrate 20 is polished, and the thickness of the second substrate 20 in the Y direction is set to an appropriate value. As a result, the plurality of second substrates 20a in the laminated portion 200M (see FIG. 5) in which the second substrates 20 on which the multilayer insulating films such as the sixth insulating film 27h and the seventh insulating film 27i are formed are laminated are laminated. The Y-direction spacing of 20e can be set to four times the Y-direction spacing of the output unit 16 on the first substrate 10.

The distance between the plurality of second substrates 20a and 20e in the laminated portion 200M (see FIG. 5) is limited to four times the distance between the output portions 16 on the first substrate 10 in the Y direction. It may be m times, which is an arbitrary integer of 2 times or more. In this case, by repeating the above steps 6A and 6B (m-1) times, the first horizontal connection lines 23ch to 23dh and the second horizontal connection lines 25ch are formed on the second surface S2 of the second substrate 20. ~ 25 dh is formed by laminating m layers in the Y direction.

(Modification 2 of the manufacturing method of the image sensor)
FIG. 15 is a diagram showing a modification 2 of the manufacturing method of the image pickup device 3. In the second modification of the manufacturing method, the unit image pickup elements 3a to 3d and the like obtained by dividing the image pickup element 3 into several parts in the X direction and the Y direction are individually manufactured, and the unit image pickup elements 3a to 3d and the like are joined to form an image pickup. The element 3 is formed.

As an example, the unit image sensor 3a is a region (pixel region) in which the pixels 11 of the image sensor 3 shown in FIG. 2A are arranged, which is divided into 6 in the X direction and 4 in the Y direction. Further, the horizontal control unit HC shown in FIG. 2A divided into 6 in the X direction is called the horizontal unit HC1, and the vertical control unit VC shown in FIG. 2A is divided into 4 in the Y direction. It is called the vertical unit VC1.
The number of divisions of the image pickup device 3 is not limited to the above 6 divisions and 4 divisions, and may be any number of divisions.

Of these, the unit image sensor 3a does not form the horizontal control circuit 29h at the end of the second substrate 20 in the −X direction in one example of the above-mentioned manufacturing method and the first modification, and the laminated portion 200M in the + Y direction. It can be manufactured by not laminating the substrate 20z on the end portion.

On the contrary, the horizontal unit HC1 can be manufactured by forming only the horizontal control circuit 29h on the second substrate 20 in the above-mentioned example of the manufacturing method and the modification 1. The vertical unit VC1 can be manufactured by joining only the substrate 20z to the first substrate 10 and the third substrate 30 in one example of the above-mentioned manufacturing method and the first modification.

When manufacturing the unit image pickup element 3a, the horizontal unit HC1, and the vertical unit VC1, it is necessary to change the size of the second substrate 20 to be used in the X direction, the circuit design of the second circuit 31, and the like. They are changes that are easy for those skilled in the art.

In the second modification of the manufacturing method, the plurality of unit image pickup elements 3a, the horizontal unit HC1, and the vertical unit VC1 manufactured as described above are arranged so that the pixels 11 contained therein are arranged on substantially the same plane. Join each other in the X and Y directions. The joining may be carried out by heating, or may be carried out at a low temperature in combination with the above-mentioned plasma treatment or the like.

At the time of joining, the wiring 28 on the second substrate 20 shown in FIG. 2C or the like is connected to each other in the unit image pickup elements 3a arranged adjacent to each other in the X direction. Similarly, the second circuit 31 formed on the third surface S3 of the third substrate 30 is connected to each other.

In the second modification of the manufacturing method, in order to form the image pickup element 3 by joining the unit image pickup elements 3a and the like manufactured separately, a large image pickup element 3 having a large area (pixel area) in which the pixels 11 are arranged is used. Can be manufactured.

The unit image sensor 3a adjacent to the horizontal unit HC1 or the vertical unit VC1 may be manufactured integrally with the horizontal unit HC1 or the vertical unit VC1.
For example, the unit image sensor 3a arranged at the end in the + Y direction may be manufactured integrally with the vertical unit VC1. In this case, in one example of the above-mentioned manufacturing method and the first modification, the horizontal control circuit 29h is not formed at the end portion of the second substrate 20 in the −X direction, but at the end portion of the laminated portion 200M in the + Y direction. The substrates 20z are laminated.

Further, the unit image sensor 3a arranged at the end in the −X direction may be manufactured integrally with the horizontal unit HC1. In this case, in one example of the above-mentioned manufacturing method and the first modification, the horizontal control circuit 29h is formed at the end portion of the second substrate 20 in the −X direction, and the substrate 20z is formed at the end portion of the laminated portion 200M in the + Y direction. Do not stack.

Further, the unit image sensor 3a arranged at the end in the −X direction and the end in the + Y direction may be manufactured integrally with the vertical unit VC1 and the horizontal unit HC1. In this case, it may be manufactured by using one example of the above-mentioned manufacturing method and the first modification.

In addition, also in the above-mentioned example of the manufacturing method of the image pickup device 3 and each modification, as described above, when the image pickup device 3 does not have the third substrate 30, the third substrate 30 is manufactured and the third substrate 30 is manufactured. The step of joining the substrate 30 and the laminated portion 200M is unnecessary.

(Example of manufacturing method of image sensor and effect of each modification)
(3) In one example of the above-mentioned manufacturing method and each modification, the first substrate 10 has a photoelectric conversion unit 13 that converts light into electric charges and a reading unit 12 that reads out a signal based on the charges converted by the photoelectric conversion unit 13. Forming, forming an output unit 16 for outputting a signal read by the reading unit 12 on the first surface S1 of the first board 10, and forming a plurality of circuits (211) along the second surface S2 of the second board 20. , 212) to form a signal processing unit 21, a connection unit (first terminal 24, first terminal 24, first terminal 24, first terminal 24, first terminal 24, first terminal 24, first terminal 24, first terminal 24, first terminal 24, which is electrically connected to the signal processing unit 21 and at least a part is exposed to the first side surface ES1 of the second substrate 20. 1 The connection line 23) is formed, the first side surface ES1 of the second board 20 is connected to the first surface S1 of the first board 10, and the connection portion and the output portion 16 are electrically connected. I have.
With this configuration, it is possible to manufacture an image pickup device 3 in which signal processing units 21, 21a to 21f are formed for each one or a small number of photoelectric conversion units 13.
Further, with this configuration, the sizes of the signal processing units 21, 21a to 21f, etc. are set along the second surface S2 without being restricted by the arrangement interval of the photoelectric conversion unit 13 in the direction in the first surface S1. It can be expanded in a direction (Z direction or the like) that is a direction and intersects with the first surface S1. As a result, the size of circuit elements such as transistors included in the circuit constituting the signal processing unit and the interval between arrangements can be increased, and the image pickup device 3 in which noise is suppressed can be manufactured.

(4) The second circuit 31 is formed along the third surface S3 of the third substrate 30, and is electrically connected to the signal processing units 21, 21a to 21f, and at least a part thereof is the second of the second substrate 20. Forming a second connection portion (second connection lines 25, 25a to 25f, second terminals 26a to 26f) exposed on the second side surface ES2 on the opposite side of the first side surface ES1, the second of the second substrate 20. The side surface ES2 may be further provided by connecting to the third surface S3 of the third substrate 30 and electrically connecting the second connection portion and the second circuit 31.
With this configuration, it is possible to manufacture the image pickup measure 3 capable of efficiently outputting the signal processed by the signal processing unit 21 arranged along the second surface S2 via the second circuit 31.

(5) After forming an insulating film (27d, 27e) and a metal portion (first terminal 24) partially covered with an insulating film (27d, 27e) on the second surface S2 of the second substrate 20. The second substrate 20 is cut or polished so that the metal portion (first terminal 24) is exposed to the first side surface ES1, and the first side surface of the connection portion (first terminal 24, first connection line 23) is formed. An exposed portion exposed to ES1 may be formed.
By this method, the metal portion (first terminal 24) can be exposed on the first side surface ES1 of the second substrate 20, and the exposed first terminal 24 is joined to the output portion 16 on the first substrate 10 described above. Can be made to.

Although various embodiments and modifications have been described above, the present invention is not limited to these contents. Moreover, each embodiment and modification may be applied individually or may be used in combination. Other aspects considered within the scope of the technical idea of the present invention are also included within the scope of the present invention.

1: Image pickup device, 2: Image pickup lens, 3: Image pickup element, 4: Image pickup control unit (generation unit), 5: Memory, HC: Horizontal control unit, VC: Vertical control unit, CU: Element control unit, 10: No. 1 substrate, S1: 1st surface, 11: pixel, 12: reading unit, 13: photoelectric conversion unit, 14: color filter, 15: microlens, 16, 16a, 16b: output unit, 17: wiring, 20, 20a ~ 20h: 2nd board, S2: 2nd surface, 21 / 21a ~ 21f: Signal processing unit, 211: AD conversion circuit, 22: Current source, 23: 1st connection line, 24: 1st terminal, 25: 1st 2 connection lines, 26: 2nd terminal, 27, 27a to 27b, 27j: insulating member, 27c to 27i: insulating film, 28, 36: wiring, ES1: 1st side surface, ES2: 2nd side surface, 30: 3rd Board, S3: 3rd surface, 31: 2nd circuit, 32: 3rd terminal

Claims (23)

An output formed on the first surface of a first substrate having a photoelectric conversion unit that converts light into electric charges and a reading unit that reads out a signal based on the charges converted by the photoelectric conversion unit, and outputs a signal read by the reading unit. Department and
A signal processing unit that includes a plurality of circuits arranged along a second surface that intersects the first surface and processes a signal based on the charge converted by the photoelectric conversion unit.
A connection unit that electrically connects the signal processing unit and the output unit,
An image sensor. In the image pickup device according to claim 1,
A second circuit located on the opposite side of the signal processing unit from the first substrate and arranged along a third surface intersecting the second surface.
A second connection unit that electrically connects the signal processing unit and the second circuit, and a second connection unit.
An image sensor further equipped with. In the image pickup device according to claim 1 or 2.
An image pickup device in which a plurality of the output unit and the signal processing unit are arranged along a first direction parallel to the first surface and the second surface. In the image pickup device according to claim 3,
An image pickup device in which a plurality of the output unit and the signal processing unit are arranged in a direction parallel to the first surface and along a second direction intersecting with the second surface. In the image pickup device according to claim 4,
An image pickup device in which the distance between the plurality of signal processing units in the second direction is equal to the distance between the plurality of output units in the second direction. In the image pickup device according to claim 4,
M (m is an integer of 2 or more) of the signal processing units are arranged at different positions in the third direction intersecting the first surface in the direction within the second surface.
A plurality of the m signal processing units are arranged along the second direction at intervals of m times the distance between the plurality of output units in the second direction.
An image pickup device in which each of the m signal processing units is connected by the connection unit to a different output unit among the m output units arranged along the second direction. The image pickup device according to any one of claims 4 to 6.
An image pickup device in which the distance between the plurality of output units in the second direction is equal to the distance between the plurality of output units in the second direction. In the image pickup device according to claim 7,
An image pickup device in which the distance between the plurality of output units in the first direction is equal to the distance between the plurality of output units in the first direction. The image pickup device according to any one of claims 4 to 6.
The distance between the plurality of output units in the second direction is n times the distance between the plurality of output units in the second direction (n is an integer of 2 or more).
The output unit is an image pickup device that outputs signals read by n or more of the reading units. In the image pickup device according to claim 9,
The distance between the plurality of output units in the first direction is k times (k is an integer of 2 or more) the distance between the plurality of output units in the first direction.
The output unit is an image pickup device that outputs signals read by the n × k reading units. The image pickup device according to any one of claims 3 to 10.
The size of the signal processing unit in the first direction is larger than the interval of arrangement of the photoelectric conversion unit in the first direction.
The signal processing unit connected to one of the two output units adjacent to each other in the first direction by the connection unit and the signal processing unit connected to the other are connected to each other in the direction in the second surface. An image sensor having a different position in the third direction that intersects the first surface. The image pickup device according to any one of claims 1 to 11.
An image pickup device in which at least the portions of the connection portion and the output portion that are connected to each other contain copper. The image pickup device according to any one of claims 1 to 12.
The signal processing unit is an image pickup element including an analog-digital conversion circuit that converts an analog signal output from the output unit into a digital signal. The image pickup device according to any one of claims 1 to 13.
An image pickup device in which the light is incident on the photoelectric conversion unit from a side opposite to the side of the first surface with respect to the photoelectric conversion unit. The image pickup device according to any one of claims 1 to 14.
An image pickup device having an angle formed by the first surface and the second surface of 80 ° or more and 90 ° or less. Forming a photoelectric conversion unit that converts light into electric charges and a reading unit that reads out a signal based on the charges converted by the photoelectric conversion unit on the first substrate.
Forming an output unit that outputs a signal read by the reading unit on the first surface of the first substrate.
Forming a signal processing unit including a plurality of circuits along the second surface of the second substrate,
Forming a connection portion that is electrically connected to the signal processing portion and at least a part of which is exposed on the first side surface of the second substrate.
Connecting the first side surface of the second substrate to the first surface of the first substrate, and electrically connecting the connection portion and the output portion.
A method for manufacturing an image sensor. In the method for manufacturing an image sensor according to claim 16,
Forming a second circuit along the third surface of the third substrate,
Forming a second connection portion that is electrically connected to the signal processing unit and at least a part of which is exposed on a second side surface opposite to the first side surface of the second substrate.
Connecting the second side surface of the second substrate to the third surface of the third substrate, and electrically connecting the second connection portion and the second circuit.
A method for manufacturing an image sensor, further comprising. In the method for manufacturing an image sensor according to claim 16 or 17.
After forming an insulating film and a metal portion at least partially covered with the insulating film on the second surface of the second substrate, the second substrate is exposed so that the metal portion is exposed on the first side surface. A method for manufacturing an image pickup device, which forms an exposed portion exposed on the first side surface of the connection portion by cutting or polishing the image sensor. The method for manufacturing an image sensor according to any one of claims 16 to 18.
After forming an insulating portion inside a part of the second substrate, the second substrate is cut or polished so that the insulating portion is exposed on the first side surface, and the first side surface of the second substrate is formed. To expose the insulation to
A method for manufacturing an image pickup device, in which the exposed insulating portion is connected to the first surface. The method for manufacturing an image sensor according to any one of claims 16 to 19.
A plurality of the output units are formed on the first surface of the first substrate at a first interval.
A plurality of the second substrates on which the signal processing unit and the connection unit are formed are laminated at intervals of m times the first interval (m is an integer of 1 or more).
A method for manufacturing an image pickup device, in which the first side surface of each of a plurality of laminated second substrates is connected to the first surface of the first substrate. In the method for manufacturing an image sensor according to claim 20,
The m is an integer of 2 or more, and is
A method for manufacturing an image sensor, wherein a part of the connection portion is formed by laminating m-layer wiring on the second surface of the second substrate at the first interval. The image pickup device manufactured by the method for manufacturing an image pickup device according to any one of claims 16 to 21.
A method for manufacturing an image pickup device, wherein a plurality of image sensors are arranged along at least one of a first direction parallel to the first surface and a second direction parallel to the first surface and intersecting the first direction. The image pickup device according to any one of claims 1 to 15,
A generator that generates image data based on the signal output from the image sensor,
An image pickup device.

Images