JP2022090366A - Mounting table and substrate processing apparatus - Google Patents

Abstract

To provide a mounting table and a substrate processing apparatus in which both of uniformity and maintainability of temperature distribution of a substrate can be realized.SOLUTION: A mounting table being a mounting table on which a substrate is mounted comprises: an electrostatic chuck that has a first mounting surface which attracts the substrate; a base table that supports the electrostatic chuck; and an edge ring that is positioned at an outer peripheral side of the substrate. The edge ring has a smaller internal diameter than an external diameter of the first mounting surface, and can be divided in a circumferential direction.SELECTED DRAWING: Figure 1

Description

The present disclosure relates to a mounting table and a substrate processing apparatus.

In plasma processing on a substrate, an edge ring may be arranged along the outer circumference of the substrate in order to uniformly perform plasma processing in the plane of the substrate. Further, the plasma treatment on the substrate is performed in a state where the substrate mounted on the electrostatic chuck is adsorbed by the electrostatic chuck. In this case, at the boundary between the substrate and the edge ring, the outer diameter of the electrostatic chuck is made smaller than the outer diameter of the substrate in order to prevent damage to the main body of the mounting table, and the outer diameter of the substrate and the inner circumference of the edge ring are reduced. It has been proposed to prevent ions and radicals from hitting the main body by overlapping the parts.

Japanese Unexamined Patent Publication No. 2007-258417 Japanese Unexamined Patent Publication No. 2010-283028

The present disclosure provides a mounting table and a substrate processing apparatus capable of achieving both uniformity of temperature distribution of a substrate and maintainability.

The mounting table according to one aspect of the present disclosure is a mounting table on which a substrate is mounted, and is an electrostatic chuck having a first mounting surface for adsorbing the substrate, a base for supporting the electrostatic chuck, and a substrate. The edge ring includes an edge ring located on the outer peripheral side, and the inner diameter of the edge ring is smaller than the outer diameter of the first mounting surface, and the edge ring can be divided in the circumferential direction.

According to the present disclosure, the uniformity of the temperature distribution of the substrate and the maintainability can be achieved at the same time.

FIG. 1 is a diagram showing an example of a plasma processing system according to the first embodiment of the present disclosure. FIG. 2 is a diagram showing an example of the configuration of the electrostatic chuck and the edge ring in the first embodiment. FIG. 3 is a diagram showing an example of an edge ring at the time of bonding in the first embodiment. FIG. 4 is a diagram showing an example of an edge ring at the time of division in the first embodiment. FIG. 5 is a diagram showing an example of the AA cross section shown in FIG. FIG. 6 is a diagram showing another example of the joint portion of the edge ring in the first embodiment. FIG. 7 is a diagram showing an example of the configuration of the electrostatic chuck and the edge ring in the second embodiment. FIG. 8 is a diagram showing an example of the configuration of the electrostatic chuck and the edge ring in the third embodiment. FIG. 9 is a diagram showing an example of experimental results in Examples and Comparative Examples. FIG. 10 is a diagram showing an example of experimental results in Examples and Comparative Examples. FIG. 11 is a diagram showing an example of the configuration of the electrostatic chuck and the edge ring in the fourth embodiment. FIG. 12 is a diagram showing an example of the configuration of the electrostatic chuck and the edge ring in the fifth embodiment. FIG. 13 is a diagram showing an example of the configuration of the electrostatic chuck and the edge ring in the sixth embodiment. FIG. 14 is a diagram showing a modified example of the edge ring.

Hereinafter, embodiments of the mounting table and the substrate processing apparatus to be disclosed will be described in detail with reference to the drawings. The disclosed techniques are not limited by the following embodiments.

When the outer diameter of the electrostatic chuck is smaller than the outer diameter of the substrate, the outer edge of the substrate does not come into contact with the electrostatic chuck, so that the heat input by the plasma is less likely to be transferred to the electrostatic chuck. Therefore, a temperature distribution, that is, an in-plane temperature gradient is formed so that the temperature of the outer edge portion of the substrate becomes high. On the other hand, when the outer diameter of the electrostatic chuck is the same as the outer diameter of the substrate, ions and radicals invade through the gap between the substrate and the edge ring, which damages the main body of the mounting table. Therefore, it is conceivable to make the inner diameter of the edge ring smaller than the outer diameter of the electrostatic chuck so that the main body portion is not damaged, but maintenance of the edge ring becomes difficult. Therefore, it is expected that the uniformity of the temperature distribution of the substrate and the maintainability are compatible.

<First Embodiment>
[Plasma processing system configuration]
An example of the configuration of the plasma processing system will be described below. FIG. 1 is a diagram showing an example of a plasma processing system according to the first embodiment of the present disclosure.

The plasma processing system includes a capacitively coupled plasma processing apparatus (hereinafter, also simply referred to as a plasma processing apparatus) 1 and a control unit 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. Further, the plasma processing apparatus 1 includes a substrate support portion 11 and a gas introduction portion. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction section includes a shower head 13. The substrate support portion 11 is arranged in the plasma processing chamber 10. The shower head 13 is arranged above the substrate support portion 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by a shower head 13, a side wall 10a of the plasma processing chamber 10, and a substrate support portion 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s, and at least one gas discharge port for discharging gas from the plasma processing space. The side wall 10a is grounded. The shower head 13 and the substrate support portion 11 are electrically insulated from the plasma processing chamber 10 housing.

The board support portion 11 includes a main body portion 111 and a ring assembly 112. The main body 111 has a central region (board support surface) 111a for supporting the substrate (wafer) W and an annular region (ring support surface) 111b for supporting the ring assembly 112. The central region (board support surface) 111a is an example of the first mounting surface, and the annular region (ring support surface) 111b is an example of the second mounting surface. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is arranged on the central region 111a of the main body 111, and the ring assembly 112 is arranged on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. In one embodiment, the main body 111 includes a base 111c and an electrostatic chuck 111d. The base 111c includes a conductive member. The conductive member of the base 111c functions as a lower electrode.

The electrostatic chuck 111d is arranged on the base 111c. The upper surface of the electrostatic chuck 111d has a substrate support surface 111a. The ring assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring. Further, although not shown, the substrate support portion 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 111d, the ring assembly 112, and the substrate W to the target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path, or a combination thereof. Heat transfer fluids such as brine and gas flow through the flow path. Further, the substrate support portion 11 may include a heat transfer gas supply portion configured to supply heat transfer gas between the back surface of the substrate W and the substrate support surface 111a.

The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c. Further, the shower head 13 includes a conductive member. The conductive member of the shower head 13 functions as an upper electrode. In addition to the shower head 13, the gas introduction portion may include one or a plurality of side gas injection portions (SGI: Side Gas Injector) attached to one or a plurality of openings formed in the side wall 10a.

The gas supply unit 20 may include at least one gas source 21 and at least one flow rate controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas from the corresponding gas source 21 to the shower head 13 via the corresponding flow rate controller 22. Each flow rate controller 22 may include, for example, a mass flow controller or a pressure-controlled flow rate controller. Further, the gas supply unit 20 may include one or more flow rate modulation devices that modulate or pulse the flow rate of at least one processing gas.

The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to the conductive member of the substrate support 11 and / or the conductive member of the shower head 13. Will be done. As a result, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power supply 31 may function as at least part of a plasma generator configured to generate plasma from one or more treated gases in the plasma processing chamber 10. Further, by supplying the bias RF signal to the conductive member of the substrate support portion 11, a bias potential is generated in the substrate W, and the ionic component in the formed plasma can be drawn into the substrate W.

In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to the conductive member of the substrate support 11 and / or the conductive member of the shower head 13 via at least one impedance matching circuit, and is a source RF signal (source RF) for plasma generation. It is configured to generate power). In one embodiment, the source RF signal has a frequency in the range of 13 MHz to 150 MHz. In one embodiment, the first RF generator 31a may be configured to generate multiple source RF signals with different frequencies. The generated one or more source RF signals are supplied to the conductive member of the substrate support 11 and / or the conductive member of the shower head 13. The second RF generation unit 31b is coupled to the conductive member of the substrate support portion 11 via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generator 31b may be configured to generate a plurality of bias RF signals with different frequencies. The generated bias RF signal is supplied to the conductive member of the substrate support 11. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

Further, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is connected to the conductive member of the substrate support portion 11 and is configured to generate a first DC signal. The generated first bias DC signal is applied to the conductive member of the substrate support portion 11. In one embodiment, the first DC signal may be applied to another electrode, such as an electrode in an electrostatic chuck. In one embodiment, the second DC generation unit 32b is connected to the conductive member of the shower head 13 and is configured to generate a second DC signal. The generated second DC signal is applied to the conductive member of the shower head 13. In various embodiments, at least one of the first and second DC signals may be pulsed. The first and second DC generation units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generation unit 32a may be provided in place of the second RF generation unit 31b. good.

The exhaust system 40 may be connected to, for example, a gas outlet 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure adjusting valve adjusts the pressure in the plasma processing space 10s. The vacuum pump may include a turbo molecular pump, a dry pump or a combination thereof.

The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various steps described in the present disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing device 1. The control unit 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to perform various control operations based on the program stored in the storage unit 2a2. The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[Details of board support 11]
Next, the details of the substrate support portion (hereinafter, also referred to as a mounting table) 11 will be described with reference to FIG. FIG. 2 is a diagram showing an example of the configuration of the electrostatic chuck and the edge ring in the first embodiment. As shown in FIG. 2, the main body 111 of the mounting table 11 is provided with an electrostatic chuck 111d above the base 111c. The electrostatic chuck 111d has a groove portion 111e into which the inner peripheral portion 112a of the ring assembly (hereinafter, also referred to as an edge ring) 112 enters on the side surface of the stepped portion between the substrate support surface 111a and the ring support surface 111b.

In FIG. 2, the depth of the groove portion 111e from the side surface of the stepped portion between the substrate support surface 111a and the ring support surface 111b toward the center of the substrate support surface 111a is represented by Δr. That is, the substrate support surface 111a and the inner peripheral portion 112a overlap each other by a maximum of Δr when the mounting table 11 is viewed from above. That is, the end portion on the inner peripheral side of the ring support surface 111b is located closer to the center side than the end portion of the outer peripheral portion of the substrate support surface 111a. Further, the outer diameter of the substrate support surface 111a is the same as the outer diameter of the wafer W, and the outer diameter of the ring support surface 111b is the same as the outer diameter of the base 111c. It should be noted that these outer diameters may include an error. Therefore, when heat is input to the wafer W from the plasma, heat can be transferred to the substrate support surface 111a directly below even at the end of the wafer W. That is, the heat transfer in the plane of the wafer W can be reduced.

Inside the electrostatic chuck 111d, electrode plates 113a and 113b are provided at the lower portions of the substrate support surface 111a and the ring support surface 111b as electrodes for electrostatic adsorption. The inner diameter of the edge ring 112 is smaller than the outer diameter of the substrate support surface 111a, and the edge ring 112 can be divided in the circumferential direction. Further, the inner diameter of the edge ring 112 is smaller than the outer diameter of the electrode plate 113a on the substrate support surface 111a. In FIG. 2, the difference between the outer diameter of the electrode plate 113a and the inner diameter of the edge ring 112 is represented by Δe.

Here, the division of the edge ring 112 will be described with reference to FIGS. 3 to 6. FIG. 3 is a diagram showing an example of an edge ring at the time of bonding in the first embodiment. FIG. 4 is a diagram showing an example of an edge ring at the time of division in the first embodiment. FIG. 5 is a diagram showing an example of the AA cross section shown in FIG.

As shown in FIG. 3, the edge ring 112 can be divided into an edge ring piece 112b and an edge ring piece 112c. When the edge ring 112 is placed on the ring support surface 111b, the edge ring piece 112b and the edge ring piece 112c are coupled to each other. In this case, the inner peripheral portion 112a is in a state of being inserted into the groove portion 111e of the electrostatic chuck 111d.

As shown in FIG. 4, when the edge ring 112 is removed from the main body 111 at the time of maintenance or the like, the edge ring 112 is divided into an edge ring piece 112b and an edge ring piece 112c in the circumferential direction. The edge ring piece 112b and the edge ring piece 112c can be removed from the main body 111 by sliding in the lateral direction. The edge ring piece 112b and the edge ring piece 112c have joint portions 112d and 112e at their ends, respectively.

As shown in FIG. 5, the joint portions 112d and 112e are notched in the thickness direction so as to form a so-called notched joint. When the edge ring piece 112b and the edge ring piece 112c are connected to each other, when viewed from above, there is a seam in the portion where the upper surfaces of the edge ring piece 112b and the edge ring piece 112c are in contact with each other. Since the edge ring piece 112b and the edge ring piece 112c have the same shape, they can be exchanged with each other. Further, the number of divisions of the edge ring 112 is not limited, and can be divided into any number such as, for example, 3 divisions, 4 divisions, 6 divisions, and the like. As described above, since the edge ring 112 can be divided in the circumferential direction, the uniformity of the temperature distribution of the substrate and the maintainability can be achieved at the same time. In addition, damage to the main body 111 of the mounting table 11 can be suppressed. Further, in the past, there was a trade-off relationship between the temperature distribution at the end of the wafer and the damage to the mounting table, but in this disclosure, the trade-off between the temperature distribution at the end of the wafer and the damage to the mounting table is made. Both can be achieved, and the edge ring can be easily replaced.

FIG. 6 is a diagram showing another example of the joint portion of the edge ring in the first embodiment. FIG. 6A is a joint portion in which the end portions of the edge ring piece 112b and the edge ring piece 112c are inclined surfaces so as to be in contact with each other. FIG. 6B has a structure in which the ends of the edge ring piece 112b and the edge ring piece 112c are fitted. The joint portion between the edge ring piece 112b and the edge ring piece 112c may be in these forms.

<Second Embodiment>
In the above-mentioned first embodiment, the substrate support surface 111a and the ring support surface 111b of the electrostatic chuck 111d are integrally formed, but the substrate support surface 111a and the ring support surface 111b may be separated from each other. The embodiment will be described as a second embodiment. The same configuration as the mounting table 11 of the first embodiment is designated by the same reference numeral, and the description of the overlapping configuration and operation will be omitted.

FIG. 7 is a diagram showing an example of the configuration of the electrostatic chuck and the edge ring in the second embodiment. As shown in FIG. 7, in the second embodiment, the main body portion 121 is provided in place of the main body portion 111 of the first embodiment. The main body portion 121 is provided with a first electrostatic chuck 121d having a substrate support surface 121a and a second electrostatic chuck 121e having a ring support surface 121b on the upper part of the base 121c. The base 121c has a central portion that supports the first electrostatic chuck 121d and a peripheral portion that supports the second electrostatic chuck 121e. The height of the central portion of the base 121c is higher than that of the ring support surface 121b.

That is, in the vicinity of the end portion of the substrate support surface 121a, the space surrounded by the ring support surface 121b, the side surface 121f of the central portion of the base 121c, and the lower surface 121g of the first electrostatic chuck 121d is the first implementation. Corresponding to the groove portion 111e of the form, the inner peripheral portion 112a is configured to enter.

In FIG. 7, the depth from the side surface of the first electrostatic chuck 121d to the side surface 121f of the central portion of the base 121c is represented by Δr. That is, as in the first embodiment, the substrate support surface 121a and the inner peripheral portion 112a overlap each other by a maximum of Δr when the mounting table 11 is viewed from above. That is, the inner peripheral portion of the ring support surface 121b is located on the center side of the outer peripheral portion of the substrate support surface 121a. Further, the outer diameter of the substrate support surface 121a is the same as the outer diameter of the wafer W, and the outer diameter of the ring support surface 121b is the same as the outer diameter of the base 121c. It should be noted that these outer diameters may include an error. Therefore, when heat is input to the wafer W from the plasma, heat can be transferred to the substrate support surface 121a directly below even at the end of the wafer W. That is, the heat transfer in the plane of the wafer W can be reduced. Further, since the first electrostatic chuck 121d of the main body portion 121 is thinner than the main body portion 111 of the first embodiment in the central portion of the base 121c, heat transfer from the substrate support surface 121a to the base 121c is improved. ..

Inside the first electrostatic chuck 121d, an electrode plate 113a is provided below the substrate support surface 121a as an electrode for electrostatic adsorption. Further, inside the second electrostatic chuck 121e, an electrode plate 113b is provided below the ring support surface 121b as an electrode for electrostatic adsorption. Similar to the first embodiment, the edge ring 112 has an inner diameter smaller than the outer diameter of the substrate support surface 121a and can be divided in the circumferential direction. Further, the inner diameter of the edge ring 112 is smaller than the outer diameter of the electrode plate 113a on the substrate support surface 121a. In FIG. 7, the difference between the outer diameter of the electrode plate 113a and the inner diameter of the edge ring 112 is represented by Δe. As described above, since the central portion of the base 121c is easily transferred, the uniformity of the temperature distribution of the substrate can be further improved and the maintainability can be achieved at the same time. Further, since the electrostatic chuck made of ceramics or the like is divided into the first electrostatic chuck 121d and the second electrostatic chuck 121e, it is easier to process than the electrostatic chuck 111d of the first embodiment. Is.

<Third Embodiment>
In the second embodiment described above, at the end of the first electrostatic chuck 121d, the lower surface 121g of the first electrostatic chuck 121d is in contact with the inner peripheral portion 112a of the edge ring 112, but the base 121c A flange may be provided in the central portion of the above, and the embodiment in this case will be described as the third embodiment. The same configuration as the mounting table 11 of the first embodiment is designated by the same reference numeral, and the description of the overlapping configuration and operation will be omitted.

FIG. 8 is a diagram showing an example of the configuration of the electrostatic chuck and the edge ring in the third embodiment. As shown in FIG. 8, in the third embodiment, the main body portion 122 is provided in place of the main body portion 121 of the second embodiment. The main body portion 122 is provided with a first electrostatic chuck 122d having a substrate support surface 122a and a second electrostatic chuck 122e having a ring support surface 122b on the upper part of the base 122c. The base 122c has a central portion that supports the first electrostatic chuck 122d and a peripheral portion that supports the second electrostatic chuck 122e. The height of the central portion of the base 122c is higher than that of the ring support surface 122b. Further, a flange 122g is provided on the upper surface of the central portion of the base 122c. The outer diameter of the flange 122g is the same as the outer diameter of the first electrostatic chuck 122d. In addition, this outer diameter may include an error.

That is, in the vicinity of the end portion of the substrate support surface 122a, the space surrounded by the ring support surface 122b, the side surface 122f of the central portion of the base 122c, and the lower surface of the flange 122g corresponds to the groove portion 111e of the first embodiment. However, the inner peripheral portion 112a is configured to enter.

In FIG. 8, the depth from the side surface of the first electrostatic chuck 122d to the side surface 122f of the central portion of the base 122c is represented by Δr. That is, as in the first and second embodiments, the substrate support surface 122a and the inner peripheral portion 112a overlap each other by a maximum of Δr when the mounting table 11 is viewed from above. That is, the inner peripheral portion of the ring support surface 122b is located closer to the center than the outer peripheral portion of the substrate support surface 122a. Further, the outer diameter of the substrate support surface 122a is the same as the outer diameter of the wafer W, and the outer diameter of the ring support surface 122b is the same as the outer diameter of the base 122c. It should be noted that these outer diameters may include an error. Therefore, when heat is input to the wafer W from the plasma, heat can be transferred to the substrate support surface 122a directly below even at the end of the wafer W. That is, the heat transfer in the plane of the wafer W can be reduced. Further, in the main body portion 122, in the central portion of the base 122c, the first electrostatic chuck 121d is thinner than the main body portion 111 of the first embodiment, and the flange 122g exists just below the end portion of the substrate support surface 122a. The heat transfer from the substrate support surface 122a to the base 122c is better than that of the main body portion 121 of the second embodiment.

Similar to the second embodiment, the inside of the first electrostatic chuck 122d has an electrode plate 113a below the substrate support surface 122a as an electrode for electrostatic adsorption. Further, inside the second electrostatic chuck 122e, an electrode plate 113b is provided below the ring support surface 122b as an electrode for electrostatic adsorption. Similar to the first and second embodiments, the edge ring 112 has an inner diameter smaller than the outer diameter of the substrate support surface 122a and can be divided in the circumferential direction. Further, the inner diameter of the edge ring 112 is smaller than the outer diameter of the electrode plate 113a on the substrate support surface 122a. In FIG. 8, the difference between the outer diameter of the electrode plate 113a and the inner diameter of the edge ring 112 is represented by Δe. As described above, since the flange 122g exists immediately below the end portion of the substrate support surface 122a, heat can be more easily transferred, so that the uniformity of the temperature distribution of the substrate can be further improved and the maintainability can be achieved at the same time.

[Experimental result]
Next, the first to third embodiments described above are referred to as Examples 1 to 3, respectively, and an experiment is performed on the temperature distribution of the wafer W by taking the case where the inner diameter is larger than the outer diameter of the substrate mounting surface in the conventional edge ring as a comparative example. Was done. 9 and 10 are diagrams showing an example of experimental results in Examples and Comparative Examples. In FIGS. 9 and 10, it is assumed that the main body 111 is uniformly cooled by the heat transfer medium in the flow path of the temperature control module (not shown).

The graph 50 shown in FIG. 9 is a graph showing the temperature distributions of Examples 1 to 3 and Comparative Examples at a radial distance r from the center of the wafer W. Further, Table 51 shown in FIG. 10 summarizes the temperature difference ΔT between the central portion (r = 0 mm) and the end portion (r = 150 mm) of the wafer W when Δr is 1.5 mm. .. In the comparative example, Δr is the length of the portion where the wafer W protrudes from the end of the substrate mounting surface of the electrostatic chuck.

As shown in Graph 50 and Table 51, in the comparative example, the temperature at the end of the wafer W is higher than the center by ΔT = 12.5 ° C. On the other hand, in Example 1, ΔT = 4.4 ° C., in Example 2, ΔT = 4.3 ° C., and in Example 3, ΔT = 2.8 ° C., the temperature at the end of the wafer W rises from the center. is doing. That is, it can be seen that in Examples 1 to 3, the uniformity of the temperature distribution of the substrate is higher than that in Comparative Example.

<Fourth Embodiment>
In the above-mentioned first to third embodiments, the edge ring 112 has a configuration in which the edge ring 112 can be divided in the circumferential direction, but a configuration in which the edge ring 112 can be divided in the radial direction, that is, a configuration in which the edge ring 112 can be divided into an annular shape may be used. The embodiment will be described as the fourth to sixth embodiments. The fourth embodiment is an example in which the main body 111 is the same as the first embodiment and the edge ring is divided into an annular shape. The same configuration as the mounting table 11 of the first embodiment is designated by the same reference numeral, and the description of the overlapping configuration and operation will be omitted.

FIG. 11 is a diagram showing an example of the configuration of the electrostatic chuck and the edge ring in the fourth embodiment. As shown in FIG. 11, in the fourth embodiment, the ring assembly (edge ring) 115 is provided in place of the edge ring 112 of the first embodiment. The edge ring 115 has a first edge ring 115a and a second edge ring 115b. The inner diameter of the first edge ring 115a is smaller than the outer diameter of the substrate support surface 111a, and the first edge ring 115a can be divided in the circumferential direction. That is, the first edge ring 115a can be divided into, for example, two like the edge ring 112. In the state where the first edge ring 115a is placed on the ring support surface 111b, the divided pieces are bonded to each other, and the end portion on the inner peripheral side of the first edge ring 115a is the groove portion 111e of the electrostatic chuck 111d. It will be in a state of being intruded.

The inner diameter of the second edge ring 115b is larger than the outer diameter of the substrate support surface 111a, and is configured as, for example, an annular integral body. The second edge ring 115b is removable in the upper direction of the mounting table 11 like the conventional edge ring. Further, the inner peripheral side of the second edge ring 115b is configured to cover the first edge ring 115a. The upper surface (the surface exposed to plasma) of the second edge ring 115b is flat. At the time of maintenance, first, the second edge ring 115b is removed upward. After that, the divided piece of the first edge ring 115a can be removed from the main body 111 by sliding it laterally. The joint portion of the divided piece of the first edge ring 115a can have the same configuration as the joint portion of the edge ring 112 of the first embodiment. Further, in the fourth embodiment, both the first edge ring 115a and the second edge ring 115b can be electrostatically adsorbed on the ring support surface 111b.

As described above, the edge ring 115 can be divided into the first edge ring 115a and the second edge ring 115b in an annular shape, and the first edge ring 115a can be divided in the circumferential direction, so that the temperature of the substrate can be divided. Both uniformity of distribution and maintainability can be achieved. Further, since the second edge ring 115b can be transported by a transport device (not shown), the plasma processing chamber 10 can be replaced without opening.

<Fifth Embodiment>
The fifth embodiment is an example in which the main body portion 121 is the same as the second embodiment and the edge ring is divided into an annular shape. The same configurations as the mounting tables 11 of the second and fourth embodiments are designated by the same reference numerals, and the description of the overlapping configurations and operations will be omitted.

FIG. 12 is a diagram showing an example of the configuration of the electrostatic chuck and the edge ring in the fifth embodiment. As shown in FIG. 12, in the fifth embodiment, the edge ring 115 is provided instead of the edge ring 112 of the second embodiment. Since the details of the main body portion 121 are the same as those of the main body portion 121 of the second embodiment and the details of the edge ring 115 are the same as those of the edge ring 115 of the fourth embodiment, the description thereof will be omitted.

In the fifth embodiment, as in the second and fourth embodiments, the uniformity of the temperature distribution of the substrate can be further improved, and the maintainability can be achieved at the same time. Further, as in the fourth embodiment, since the second edge ring 115b can be transported by a transport device (not shown), the plasma processing chamber 10 can be replaced without opening.

<Sixth Embodiment>
The sixth embodiment is an example in which the main body portion 122 is the same as the third embodiment and the edge ring is divided into an annular shape. The same configurations as the mounting tables 11 of the third and fourth embodiments are designated by the same reference numerals, and the description of the overlapping configurations and operations will be omitted.

FIG. 13 is a diagram showing an example of the configuration of the electrostatic chuck and the edge ring in the sixth embodiment. As shown in FIG. 13, in the sixth embodiment, the edge ring 115 is provided instead of the edge ring 112 of the third embodiment. Since the details of the main body portion 122 are the same as those of the main body portion 122 of the third embodiment and the details of the edge ring 115 are the same as those of the edge ring 115 of the fourth embodiment, the description thereof will be omitted.

In the sixth embodiment, as in the third and fourth embodiments, the uniformity of the temperature distribution of the substrate can be further improved, and the maintainability can be achieved at the same time. Further, as in the fourth embodiment, since the second edge ring 115b can be transported by a transport device (not shown), the plasma processing chamber 10 can be replaced without opening.

<Modification example of edge ring 115>
Subsequently, a modified example of the edge ring 115 in the fourth to sixth embodiments will be described with reference to FIG. FIG. 14 is a diagram showing a modified example of the edge ring. The edge ring 116 shown in FIG. 14A has a first edge ring 116a and a second edge ring 116b. The inner diameter of the first edge ring 116a is smaller than the outer diameter of the substrate support surfaces 111a, 121a, 122a, and the first edge ring 116a can be divided in the circumferential direction. That is, the first edge ring 116a can be divided into, for example, two like the edge ring 112. The first edge ring 116a is placed over the entire width of the ring support surfaces 111b, 121b, 122b. The first edge ring 116a has a thickness that can be inserted into, for example, the groove portion 111e of the electrostatic chuck 111d. Further, the first edge ring 116a can be electrostatically adsorbed on the ring support surfaces 111b, 121b, 122b.

The inner diameter of the second edge ring 116b is larger than the outer diameter of the substrate support surfaces 111a, 121a, 122a, and is configured as, for example, an annular integral body. The second edge ring 116b is removable in the upper direction of the mounting table 11 like the conventional edge ring. Since the second edge ring 116b is placed on the first edge ring 116a, electrostatic adsorption is not performed on the ring support surfaces 111b, 121b, 122b.

The edge ring 117 shown in FIG. 14 (B) has a first edge ring 117a and a second edge ring 117b. The inner diameter of the first edge ring 117a is smaller than the outer diameter of the substrate support surfaces 111a, 121a, 122a, and the first edge ring 117a can be divided in the circumferential direction. That is, the first edge ring 117a can be divided into, for example, two like the edge ring 112. The first edge ring 117a is placed over the entire width of the ring support surfaces 111b, 121b, 122b. The inner peripheral portion of the first edge ring 117a has a thickness that can be inserted into, for example, the groove portion 111e of the electrostatic chuck 111d. Further, the portion of the first edge ring 117a on which the second edge ring 117b is placed is thinner than the inner peripheral portion. Further, the first edge ring 118a can be electrostatically adsorbed on the ring support surfaces 111b, 121b, 122b.

The inner diameter of the second edge ring 117b is larger than the outer diameter of the substrate support surfaces 111a, 121a, 122a, and is configured as an annular body, for example. The second edge ring 117b can be removed in the upper direction of the mounting table 11 like the conventional edge ring. Since the second edge ring 117b is placed on the first edge ring 117a, electrostatic adsorption is not performed on the ring support surfaces 111b, 121b, 122b.

The edge ring 118 shown in FIG. 14 (C) has a first edge ring 118a and a second edge ring 118b. The inner diameter of the first edge ring 118a is smaller than the outer diameter of the substrate support surfaces 111a, 121a, 122a, and the first edge ring 118a can be divided in the circumferential direction. That is, the first edge ring 118a can be divided into, for example, two like the edge ring 112. The first edge ring 118a is placed in a region of approximately half of the width of the ring support surfaces 111b, 121b, 122b on the center side. The inner peripheral portion of the first edge ring 118a has a thickness that can be inserted into, for example, the groove portion 111e of the electrostatic chuck 111d. The portion where the second edge ring 118b overlaps the first edge ring 118a is thicker than the inner peripheral portion.

The inner diameter of the second edge ring 118b is larger than the outer diameter of the substrate support surfaces 111a, 121a, 122a, and is configured as, for example, an annular integral body. The second edge ring 118b can be removed in the upper direction of the mounting table 11 like the conventional edge ring. The second edge ring 118b is placed so that the inner peripheral side overlaps the first edge ring 118a, and the outer peripheral side is in contact with the ring support surfaces 111b, 121b, 122b. Therefore, both the first edge ring 118a and the second edge ring 118b are capable of electrostatic adsorption.

The edge ring 119 shown in FIG. 14 (D) has a first edge ring 119a and a second edge ring 119b. The inner diameter of the first edge ring 119a is smaller than the outer diameter of the substrate support surfaces 111a, 121a, 122a, and the first edge ring 119a can be divided in the circumferential direction. That is, the first edge ring 119a can be divided into, for example, two like the edge ring 112. The first edge ring 119a is placed in a region of approximately half of the width of the ring support surfaces 111b, 121b, 122b on the center side. The inner peripheral portion of the first edge ring 119a has a thickness that can be inserted into, for example, the groove portion 111e of the electrostatic chuck 111d. In the portion where the second edge ring 119b overlaps the first edge ring 119a, the end portion on the inner peripheral side of the second edge ring 119b is in contact with the upper surface of the inner peripheral portion of the first edge ring 119a. It is configured to mesh with the outer peripheral side of the first edge ring 119a.

The inner diameter of the second edge ring 119b is larger than the outer diameter of the substrate support surfaces 111a, 121a, 122a, and is configured as, for example, an annular body. The second edge ring 119b is removable in the upper direction of the mounting table 11 like the conventional edge ring. The second edge ring 119b is placed so that the inner peripheral side overlaps the first edge ring 119a, and the outer peripheral side is in contact with the ring support surfaces 111b, 121b, 122b. Therefore, both the first edge ring 119a and the second edge ring 119b are capable of electrostatic adsorption.

As described above, according to each embodiment, the mounting table 11 is a mounting table on which the substrate (wafer W) is mounted, and has a first mounting surface (board support surfaces 111a, 121a, 122a) for adsorbing the substrate. An electrostatic chuck (electrostatic chuck 111d, first electrostatic chuck 121d, 122d), a base (111c, 121c, 122c) for supporting the electrostatic chuck, and an edge ring (112) located on the outer peripheral side of the substrate. , 115). The edge ring has an inner diameter smaller than the outer diameter of the first mounting surface and can be divided in the circumferential direction. As a result, both the uniformity of the temperature distribution of the substrate and the maintainability can be achieved.

Further, according to each embodiment, the electrostatic chuck further has a second mounting surface (ring support surfaces 111b, 121b, 122b) for adsorbing the edge ring, and the inner circumference of the second mounting surface. The portion is located on the center side of the outer peripheral portion of the first mounting surface. As a result, both the uniformity of the temperature distribution of the substrate and the maintainability can be achieved.

Further, according to the second, third, fifth, and sixth embodiments, the base has a central portion that supports the first electrostatic chuck (121d, 122d) having the first mounting surface, and the first. It has a peripheral portion that supports a second electrostatic chuck (121e, 122e) having a mounting surface of 2, and the height of the central portion is higher than that of the second mounting surface. As a result, the uniformity of the temperature distribution of the substrate can be further improved, and maintenance can be achieved at the same time.

Further, according to the third and sixth embodiments, the central portion has a flange 122g on the upper surface having the same outer diameter as the outer diameter of the first electrostatic chuck 122d. As a result, the uniformity of the temperature distribution of the substrate can be further improved, and maintenance can be achieved at the same time.

Further, according to each embodiment, the outer diameter of the first mounting surface is the same as the outer diameter of the substrate. As a result, the heat at the end of the substrate can be transferred to the first electrostatic chucks (121d, 122d).

Further, according to the fourth to sixth embodiments, the edge ring 115 has an inner diameter smaller than the outer diameter of the first mounting surface and is divisible in the circumferential direction, and has an inner diameter of the first edge ring 115a. It has a second edge ring 115b that is larger than the outer diameter of the mounting surface of 1 and is integrated. As a result, both the uniformity of the temperature distribution of the substrate and the maintainability can be achieved.

Further, according to the fourth to sixth embodiments, the first edge ring 115a and the second edge ring 115b can be adsorbed on the second mounting surface. As a result, the first edge ring 115a and the second edge ring 115b can be adsorbed and cooled.

Further, according to each embodiment, the inner diameter of the edge ring is smaller than the outer diameter of the electrode (electrode plate 113a) in the electrostatic chuck on the first mounting surface. As a result, the end portion of the substrate can be more electrostatically adsorbed.

Each embodiment disclosed this time should be considered to be exemplary in all respects and not restrictive. Each of the above embodiments may be omitted, replaced or modified in various forms without departing from the scope of the appended claims and their gist.

For example, the mounting table according to the present disclosure can be applied not only to a capacitively coupled plasma (CCP) device but also to other substrate processing devices. Other substrate processing equipment includes inductively coupled plasma (ICP) processing equipment, plasma processing equipment using radial line slot antennas, helicon wave excitation type plasma (HWP: Helicon Wave Plasma) equipment, and electron cyclotron resonance. It may be a plasma (ECR: Electron Cyclotron Resonance Plasma) device or the like.

Further, in each of the above-described embodiments, the electrode plate 113b for electrostatic adsorption is provided on the second mounting surface (ring support surface 111b, 121b, 122b), but the present invention is not limited to this. For example, if it is not necessary to electrostatically attract the edge rings 112 and 115, the electrode plate 113b may not be provided. Similarly, it is not necessary to provide the second electrostatic chuck (121e, 122e).

1 Capacitively coupled plasma processing equipment (plasma processing equipment)
10 Plasma processing chamber 11 Board support (mounting table)
111, 121, 122 Main body 111a, 121a, 122a Central region (board support surface)
111b, 121b, 122b annular region (ring support surface)
111c, 121c, 122c Base 111d Electrostatic chuck 111e Groove 112, 115 Ring assembly (edge ring)
112a Inner peripheral part 112b, 112c Edge ring piece 112d, 112e Coupling part 113a, 113b Electrode plate 115a First edge ring 115b Second edge ring 121d, 122d First electrostatic chuck 121e, 122e Second electrostatic chuck 121f, 122f Side surface 121g Bottom surface 122g Flange W substrate (wafer)

Claims (9)

It is a mounting table on which the board is mounted.
An electrostatic chuck having a first mounting surface for adsorbing the substrate,
The base that supports the electrostatic chuck and
With an edge ring located on the outer peripheral side of the substrate,
The edge ring has an inner diameter smaller than the outer diameter of the first mounting surface and can be divided in the circumferential direction.
Mounting stand. The electrostatic chuck further has a second mounting surface that attracts the edge ring, and the inner peripheral portion of the second mounting surface is closer to the center side than the outer peripheral portion of the first mounting surface. Located in,
The mounting table according to claim 1. The base has a central portion that supports the first electrostatic chuck having the first mounting surface and a peripheral portion that supports the second electrostatic chuck having the second mounting surface. However, the height of the central portion is higher than that of the second mounting surface.
The mounting table according to claim 2. The central portion has a flange on the upper surface having an outer diameter the same as the outer diameter of the first electrostatic chuck.
The mounting table according to claim 3. The outer diameter of the first mounting surface is the same as the outer diameter of the substrate.
The mounting table according to any one of claims 1 to 4. The edge ring is integrated with the first edge ring having an inner diameter smaller than the outer diameter of the first mounting surface and being divisible in the circumferential direction, and having an inner diameter larger than the outer diameter of the first mounting surface. Has a second edge ring that is
The mounting table according to any one of claims 1 to 5. The first edge ring and the second edge ring can be adsorbed on the second mounting surface.
The mounting table according to claim 6. The inner diameter of the edge ring is smaller than the outer diameter of the electrode in the electrostatic chuck on the first mounting surface.
The mounting table according to any one of claims 1 to 7. A substrate processing apparatus having the mounting table according to any one of claims 1 to 8.

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