JP2022070483A - Power semiconductor module, method for manufacturing the same, and power conversion device - Google Patents

Abstract

To provide a power semiconductor module that enables various types of external connection terminals to be easily connected with a plurality of terminal parts of a lead frame.SOLUTION: A power semiconductor module 1 comprises a lead frame 10, at least one power semiconductor chip 20, a plurality of external connection terminals 30, and an encapsulation member 42. The lead frame 10 includes a plurality of terminal parts 13. The plurality of terminal parts 13 respectively include a plurality of portions 13a exposed from the encapsulation member 42. The plurality of external connection terminals 30 respectively include a plurality of pairs of holding pieces 32. The plurality of pairs of holding pieces 32 respectively hold the plurality of portions 13a of the plurality of terminal parts 13.SELECTED DRAWING: Figure 2

Description

The present disclosure relates to a power semiconductor module, a manufacturing method thereof, and a power conversion device.

International Publication No. 2013/171946 (Patent Document 1) discloses a semiconductor device including a case and a package. The case includes a resin frame and a plurality of first terminals. The package includes a lead frame, a power semiconductor element mounted on the lead frame, a mold resin for encapsulating the power semiconductor element, and a plurality of second terminals connected to the lead frame. The plurality of second terminals of the package are electrically connected to the plurality of first terminals of the case using a bonding material such as solder or ultrasonic bonding.

International Publication No. 2013/171946

In the semiconductor device described in Patent Document 1, the plurality of second terminals of the package are bonded to the plurality of first terminals of the case by using a bonding material such as solder or ultrasonic bonding. Therefore, complicated work is required to electrically connect the plurality of second terminals to the plurality of first terminals. The present disclosure has been made in view of the above problems, and an object thereof is a power semiconductor module in which various types of external connection terminals can be easily connected to a plurality of terminals of a lead frame, a manufacturing method thereof, and electric power. It is to provide a conversion device.

The power semiconductor module of the present disclosure includes a lead frame, at least one power semiconductor chip, a plurality of external connection terminals, and a sealing member. The lead frame includes at least one die pad portion and a plurality of terminal portions. The plurality of external connection terminals are connected to the plurality of terminal portions, respectively. The sealing member seals at least one power semiconductor chip. The lead frame has a first main surface and a second main surface opposite to the first main surface. At least one power semiconductor chip is mounted on the first main surface of at least one die pad portion, and is electrically connected to a plurality of terminal portions. Each of the plurality of terminal portions includes a plurality of portions exposed from the sealing member. Each of the plurality of external connection terminals includes a plurality of pairs of holding pieces. Each of the plurality of pairs of sandwiching pieces sandwiches a plurality of portions of the plurality of terminal portions.

The method for manufacturing a power semiconductor module of the present disclosure includes mounting at least one power semiconductor chip on at least one die pad portion of a lead frame. The lead frame includes at least one die pad portion and a plurality of terminal portions. The lead frame has a first main surface and a second main surface opposite to the first main surface. At least one power semiconductor chip is mounted on the first main surface of at least one die pad portion, and is electrically connected to a plurality of terminal portions. The method for manufacturing a power semiconductor module of the present disclosure comprises sealing at least one power semiconductor chip with a sealing member. Each of the plurality of terminal portions includes a plurality of portions exposed from the sealing member. The method for manufacturing a power semiconductor module of the present disclosure includes connecting a plurality of external connection terminals to a plurality of terminal portions by sandwiching a plurality of portions of the plurality of terminal portions by a plurality of pairs of sandwiching pieces. Each of the plurality of external connection terminals includes a plurality of pairs of holding pieces.

The power conversion device of the present disclosure includes a main conversion circuit and a control circuit. The main conversion circuit has the power semiconductor module of the present disclosure, and is configured to be able to convert and output the input power. The control circuit is configured so that a control signal for controlling the main conversion circuit can be output to the main conversion circuit.

In the power semiconductor module and the power conversion device of the present disclosure, a plurality of pairs of sandwiching pieces of a plurality of external connection terminals each sandwich a plurality of portions of the plurality of terminal portions. According to the power semiconductor modules and power conversion devices of the present disclosure, various types of external connection terminals can be easily connected to a plurality of terminal portions of a lead frame.

In the method for manufacturing a power semiconductor module of the present disclosure, a plurality of pairs of sandwiching pieces of a plurality of external connection terminals sandwich a plurality of portions of a plurality of terminal portions. According to the method of manufacturing a power semiconductor module of the present disclosure, various types of external connection terminals can be easily connected to a plurality of terminal portions of a lead frame.

It is a schematic plan view of the power semiconductor module of Embodiment 1. FIG. FIG. 3 is a schematic cross-sectional view of region II shown in FIG. 1 of the power semiconductor module of the first embodiment. It is a schematic partial enlarged perspective view of the external connection terminal and the insulating member included in the power semiconductor module of Embodiment 1. FIG. It is a schematic partial enlarged perspective view which shows another example of an external connection terminal and an insulating member. It is a schematic sectional drawing which shows one step of the manufacturing method of the power semiconductor module of Embodiment 1. FIG. It is a schematic sectional drawing which shows the next process of the process shown in FIG. 6 in the manufacturing method of the power semiconductor module of Embodiment 1. FIG. It is a schematic sectional drawing which shows the next process of the process shown in FIG. 6 in the manufacturing method of the power semiconductor module of Embodiment 1. FIG. It is a schematic cross-sectional view which shows the next process of the process shown in FIG. 7 in the manufacturing method of the power semiconductor module of Embodiment 1. FIG. It is a schematic sectional drawing which shows the next process of the process shown in FIG. 8 in the manufacturing method of the power semiconductor module of Embodiment 1. FIG. FIG. 3 is an enlarged perspective view of a schematic portion of an external connection terminal and an insulating member in the method for manufacturing a power semiconductor module according to the first embodiment. It is a schematic partial enlarged perspective view which shows another example of an external connection terminal and an insulating member. It is a schematic sectional drawing which shows the next process of the process shown in FIG. 9 in the manufacturing method of the power semiconductor module of Embodiment 1. FIG. It is the schematic sectional drawing of the power semiconductor module of the modification of Embodiment 1. It is a schematic plan view of the power semiconductor module of Embodiment 2. It is a schematic partial enlarged perspective view of the external connection terminal and the insulating member included in the power semiconductor module of Embodiment 2. FIG. It is the schematic sectional drawing of the power semiconductor module of Embodiment 3. FIG. It is a schematic sectional drawing of the power semiconductor module of Embodiment 4. FIG. It is the schematic sectional drawing of the power semiconductor module of Embodiment 5. It is the schematic sectional drawing of the power semiconductor module of Embodiment 6. It is the schematic sectional drawing of the power semiconductor module of the modification of Embodiment 6. It is a block diagram which shows the structure of the power conversion system which concerns on Embodiment 7.

Hereinafter, embodiments of the present disclosure will be described. The same reference number is assigned to the same configuration, and the description thereof will not be repeated.

Embodiment 1.
The power semiconductor module 1 of the first embodiment will be described with reference to FIGS. 1 to 3. The power semiconductor module 1 mainly includes a lead frame 10, at least one power semiconductor chip 20, a plurality of external connection terminals 30, and a sealing member 42. The power semiconductor module 1 may further include at least one control semiconductor chip 23. The power semiconductor module 1 may further include an insulating member 38. The power semiconductor module 1 may further include a heat dissipation sheet 40.

The lead frame 10 has a first main surface 10a and a second main surface 10b on the opposite side of the first main surface 10a. The first main surface 10a and the second main surface 10b extend in the x direction and the y direction, respectively. The lead frame 10 is made of a conductive material. The lead frame 10 is made of, for example, copper, aluminum, or a metal such as an alloy of copper and aluminum. The surface of the lead frame 10 including the first main surface 10a and the second main surface 10b may be coated with a plating film made of nickel or silver. The plating film prevents the lead frame 10 from being oxidized.

The lead frame 10 includes at least one die pad portion 11. Specifically, the lead frame 10 may include a plurality of die pad portions 11. The lead frame 10 may further include at least one die pad portion 12. Specifically, the lead frame 10 may include a plurality of die pad portions 12. The lead frame 10 further includes a plurality of terminal portions 13. The plurality of terminal portions 13 are arranged along the y direction. Each of the plurality of terminal portions 13 includes a plurality of portions 13a exposed from the sealing member 42. The lead frame 10 further includes a plurality of terminal portions 14. The plurality of terminal portions 14 are arranged along the y direction. Each of the plurality of terminal portions 14 includes a plurality of portions 14a exposed from the sealing member 42.

The at least one power semiconductor chip 20 is, for example, an insulated gate bipolar transistor (IGBT), a metal oxide semiconductor field effect transistor (PWM), or a diode. The at least one power semiconductor chip 20 is made of a semiconductor material such as, for example, silicon (Si), silicon carbide (SiC) or gallium nitride (GaN). At least one power semiconductor chip 20 is mounted on the first main surface 10a of at least one die pad portion 11 by using, for example, a joining member 21. The joining member 21 may be, for example, a solder, a conductive adhesive, or a metal fine particle sintered body such as a silver fine particle sintered body or a copper fine particle sintered body. At least one power semiconductor chip 20 is electrically connected to a plurality of terminal portions 13. For example, at least one power semiconductor chip 20 is electrically connected to a plurality of terminal portions 13 by using a plurality of conductive wires 26.

Specifically, at least one power semiconductor chip 20 may be a plurality of power semiconductor chips 20. The plurality of power semiconductor chips 20 may be mounted on the first main surface 10a of the plurality of die pad portions 11. Each of the plurality of power semiconductor chips 20 is electrically connected to the plurality of terminal portions 13. For example, each of the plurality of power semiconductor chips 20 is electrically connected to the plurality of terminal portions 13 by using the plurality of conductive wires 26.

At least one control semiconductor chip 23 controls at least one power semiconductor chip 20. At least one control semiconductor chip 23 may control the gate voltage of at least one power semiconductor chip 20, for example. The power semiconductor module 1 is, for example, an intelligent power module (IPM) incorporating at least one power semiconductor chip 20 and at least one control semiconductor chip 23 for controlling at least one power semiconductor chip 20.

At least one control semiconductor chip 23 is made of a semiconductor material such as silicon (Si). At least one control semiconductor chip 23 is mounted on the first main surface 10a of at least one die pad portion 12 by using, for example, a joining member 24. The joining member 24 may be, for example, solder, a conductive adhesive, or a metal fine particle sintered body such as a silver fine particle sintered body or a copper fine particle sintered body. At least one control semiconductor chip 23 is electrically connected to a plurality of terminal portions 14. For example, at least one control semiconductor chip 23 is electrically connected to a plurality of terminal portions 14 by using a plurality of conductive wires 28.

Specifically, at least one control semiconductor chip 23 may be a plurality of control semiconductor chips 23. The plurality of control semiconductor chips 23 may be mounted on the first main surface 10a of the plurality of die pad portions 12. Each of the plurality of control semiconductor chips 23 is electrically connected to the plurality of terminal portions 14. For example, the plurality of control semiconductor chips 23 are electrically connected to the plurality of terminal portions 14 by using the plurality of conductive wires 28, respectively.

At least one control semiconductor chip 23 is electrically connected to at least one power semiconductor chip 20. For example, at least one control semiconductor chip 23 is electrically connected to at least one power semiconductor chip 20 by using at least one conductive wire 27. Specifically, each of the plurality of control semiconductor chips 23 is electrically connected to the plurality of power semiconductor chips 20. For example, the plurality of control semiconductor chips 23 are electrically connected to the plurality of power semiconductor chips 20 by using the plurality of conductive wires 27, respectively.

The conductive wires 26, 27, 28 are made of a conductive material. The conductive wires 26, 27, 28 may be made of a metal such as aluminum, copper, gold or silver, for example. The plurality of conductive wires 26 are bonded to at least one power semiconductor chip 20 and the plurality of terminal portions 13. At least one conductive wire 27 is bonded to at least one power semiconductor chip 20 and at least one control semiconductor chip 23. The plurality of conductive wires 28 are bonded to at least one control semiconductor chip 23 and the plurality of terminal portions 14.

The sealing member 42 seals at least one power semiconductor chip 20 and at least one control semiconductor chip 23. The sealing member 42 may further seal at least one die pad portion 11 and at least one die pad portion 12. The sealing member 42 may further seal a part of the plurality of terminal portions 13 and a part of the plurality of terminal portions 14. The sealing member 42 may further seal the conductive wires 26, 27, 28. The sealing member 42 may further seal a part of the heat dissipation sheet 40. The sealing member 42 has electrical insulation. The sealing member 42 may be a molded resin. The sealing member 42 is made of a resin material such as an epoxy resin.

The plurality of external connection terminals 30 are made of a conductive material. The plurality of external connection terminals 30 are made of a metal such as copper or aluminum. The plurality of external connection terminals 30 are arranged along the y direction. Each of the plurality of external connection terminals 30 is connected to the plurality of terminal portions 13. Specifically, the plurality of external connection terminals 30 are each connected to a plurality of portions 13a of the plurality of terminal portions 13. Each of the plurality of external connection terminals 30 is connected to the plurality of terminal portions 14. Specifically, the plurality of external connection terminals 30 are each connected to a plurality of portions 14a of the plurality of terminal portions 14. The surface of the plurality of external connection terminals 30 may be coated with a plating film made of nickel or tin. The plating film prevents the plurality of external connection terminals 30 from being oxidized. The plating film reduces the contact resistance between the terminal portions 13 and 14 of the lead frame 10 and the plurality of external connection terminals 30.

Each of the plurality of external connection terminals 30 includes a plurality of external connection terminal main bodies 31 and a plurality of pairs of holding pieces 32. Each of the plurality of external connection terminal main bodies 31 is connected to a plurality of pairs of holding pieces 32. The plurality of external connection terminal main bodies 31 extend along the normal line (z direction) of the first main surface 10a, for example. The power semiconductor module 1 has a dual in-line package (DIP) structure.

Each of the plurality of pairs of holding pieces 32 is provided, for example, at one end of each of the plurality of external connection terminals 30 (plurality of external connection terminal main bodies 31). Each of the plurality of pairs of sandwiching pieces 32 sandwiches a plurality of portions 13a of the plurality of terminal portions 13. Specifically, each of the plurality of pairs of sandwiching pieces 32 is crimped to the plurality of portions 13a of the plurality of terminal portions 13. Each of the plurality of pairs of sandwiching pieces 32 sandwiches a plurality of portions 14a of the plurality of terminal portions 14. Specifically, each of the plurality of pairs of sandwiching pieces 32 is crimped to a plurality of portions 14a of the plurality of terminal portions 14.

When mounting the power semiconductor module 1 on a printed circuit board (not shown), a plurality of external connection terminals 30 on the side opposite to one end of each of the plurality of external connection terminals 30 (plurality of external connection terminal main bodies 31). The other end of each of the (plurality of external connection terminal main bodies 31) is joined to the printed circuit board. The types of the plurality of external connection terminals 30 are changed according to the type of the printed circuit board. For example, depending on the type of the printed circuit board, a plurality of external connection terminals 30 of the type shown in FIG. 3 may be used, or a plurality of external connection terminals 30 of the type shown in FIG. 4 may be used. .. The other end of each of the plurality of external connection terminals 30 of the type shown in FIG. 3 has, for example, a straight shape. The other end of each of the plurality of external connection terminals 30 of the type shown in FIG. 4 is, for example, a press-fit terminal.

The insulating member 38 is provided between the plurality of external connection terminals 30, and electrically insulates the plurality of external connection terminals 30 from each other. The insulating member 38 is, for example, an insulating case that accommodates a part of a plurality of external connection terminals 30. The insulating member 38 may be integrated with a plurality of external connection terminals 30. The insulating member 38 may be a resin molded product. The insulating member 38 is made of an insulating resin such as polyphenylene sulfide (PPS) or soft rubber, for example. The insulating member 38 is in contact with the sealing member 42. The insulating member 38 covers the surface 30 m proximal to the second main surface 10b of the lead frame 10 (terminal portion 14) among the plurality of external connection terminals 30.

The heat radiating sheet 40 is made of an insulating material having a higher thermal conductivity than the sealing member 42. The heat radiating sheet 40 is in contact with the second main surface 10b of at least one die pad portion 12. The heat radiating sheet 40 dissipates the heat generated in the power semiconductor chip 20 to the outside of the power semiconductor module 1. In one example, the heat dissipation sheet 40 is made of an insulating resin containing a heat conductive filler. The heat conductive filler is, for example, silica. The insulating resin is, for example, epoxy. In another example, the heat dissipation sheet 40 is a ceramic substrate such as aluminum nitride.

The manufacturing method of the power semiconductor module 1 of this embodiment will be described with reference to FIGS. 5 to 12.

With reference to FIG. 5, the method of manufacturing the power semiconductor module 1 of the present embodiment includes mounting at least one power semiconductor chip 20 on at least one die pad portion 11 of the lead frame 10. Specifically, at least one power semiconductor chip 20 is joined onto the first main surface 10a of at least one die pad portion 11 of the lead frame 10 by using, for example, a joining member 21.

At least one control semiconductor chip 23 may be mounted on at least one die pad portion 12 of the lead frame 10. Specifically, at least one control semiconductor chip 23 is joined onto the first main surface 10a of at least one die pad portion 12 of the lead frame 10 by using, for example, a joining member 24.

At least one power semiconductor chip 20 is electrically connected to a plurality of terminal portions 13. For example, at least one power semiconductor chip 20 is electrically connected to a plurality of terminal portions 13 by using a plurality of conductive wires 26. Using a wire bonder (not shown), the plurality of conductive wires 26 are bonded to at least one power semiconductor chip 20 and the plurality of terminal portions 13.

At least one control semiconductor chip 23 is electrically connected to a plurality of terminal portions 14. For example, at least one control semiconductor chip 23 is electrically connected to a plurality of terminal portions 14 by using a plurality of conductive wires 28. Using a wire bonder (not shown), the plurality of conductive wires 28 are bonded to at least one control semiconductor chip 23 and the plurality of terminal portions 14.

At least one power semiconductor chip 20 is electrically connected to at least one control semiconductor chip 23. For example, at least one power semiconductor chip 20 is electrically connected to at least one control semiconductor chip 23 by using at least one conductive wire 27. Using a wire bonder (not shown), at least one conductive wire 27 is bonded to at least one power semiconductor chip 20 and at least one control semiconductor chip 23.

With reference to FIGS. 6 and 7, the method of manufacturing the power semiconductor module 1 of the present embodiment includes sealing at least one power semiconductor chip 20 with a sealing member 42. Each of the plurality of terminal portions 13 includes a plurality of portions 13a exposed from the sealing member 42. At least one control semiconductor chip 23 may also be sealed by the sealing member 42. The sealing member 42 may further seal at least one die pad portion 11 and at least one die pad portion 12. The sealing member 42 may further seal a part of the plurality of terminal portions 13 and a part of the plurality of terminal portions 14. The sealing member 42 may further seal the conductive wires 26, 27, 28. The sealing member 42 may further seal a part of the heat dissipation sheet 40. Each of the plurality of terminal portions 14 includes a plurality of portions 14a exposed from the sealing member 42.

Specifically, referring to FIG. 6, the heat dissipation sheet 40 is set in the cavity 47 of the mold 45. Then, the lead frame 10 on which at least one power semiconductor chip 20 and at least one control semiconductor chip 23 are mounted is set in the cavity 47 of the mold 45. The heat radiating sheet 40 is in contact with the second main surface 10b of at least one die pad portion 12.

With reference to FIG. 7, the sealing resin is injected into the cavity 47 of the mold 45 from the injection port 48 of the mold 45 by using the transfer molding method or the compression molding method. The sealing resin is cured to form the sealing member 42. The lead frame 10 and the heat radiating sheet 40 are integrated by a sealing member 42. At least one power semiconductor chip 20 and at least one control semiconductor chip 23 are sealed by a sealing member 42. A part of the plurality of terminal portions 13 may be sealed by the sealing member 42. The plurality of portions 13a of the plurality of terminal portions 13 are exposed from the sealing member 42. A part of the plurality of terminal portions 14 may be sealed by the sealing member 42. The plurality of portions 14a of the plurality of terminal portions 14 are exposed from the sealing member 42.

The lead frame 10 and the heat radiating sheet 40 integrated by the sealing member 42 are taken out from the mold 45. With reference to FIG. 8, the lead frame 10 integrated with the sealing member 42, the heat dissipation sheet 40, and the base 50 are placed on the base 50. The base 50 includes a top surface 51. A recess 52 is provided on the top surface 51 of the base 50. The heat radiating sheet 40 is placed on the bottom surface 53 of the recess 52. The recess 52 accommodates a part of the sealing member 42. The plurality of portions 13a of the plurality of terminal portions 13 and the plurality of portions 14a of the plurality of terminal portions 14 are above the top surface 51.

With reference to FIG. 9, the method of manufacturing the power semiconductor module 1 of the present embodiment includes providing an insulating member 38 between a plurality of external connection terminals 30. By molding the insulating resin, the insulating member 38 may be integrated with a plurality of external connection terminals 30. The insulating member 38 covers the surface 30 m proximal to the second main surface 10b of the lead frame 10 (terminal portion 14) among the plurality of external connection terminals 30. The type of the plurality of external connection terminals 30 is changed according to the type of the printed circuit board (not shown) to which the other end of the plurality of external connection terminals 30 is joined. For example, depending on the type of the printed circuit board, a plurality of external connection terminals 30 of the type shown in FIG. 10 may be used, or a plurality of external connection terminals 30 of the type shown in FIG. 11 may be used. .. The other end of each of the plurality of external connection terminals 30 of the type shown in FIG. 10 has, for example, a straight shape. The other end of each of the plurality of external connection terminals 30 of the type shown in FIG. 11 is, for example, a press-fit terminal.

With reference to FIGS. 9 and 12, in the method of manufacturing the power semiconductor module 1 of the present embodiment, a plurality of pairs of sandwiching pieces 32 sandwich a plurality of portions 13a of a plurality of terminal portions 13 to accommodate a plurality of external devices. Each of the connection terminals 30 is provided with connection to a plurality of terminal portions 13.

Specifically, referring to FIG. 9, the insulating member 38 in which the plurality of external connection terminals 30 are integrated is placed on the top surface 51 of the base 50. The insulating member 38 is moved along the top surface 51 of the base 50. The insulating member 38 comes into contact with the sealing member 42. The plurality of portions 13a of the plurality of terminal portions 13 are respectively located between the plurality of pairs of holding pieces 32. The plurality of portions 14a of the plurality of terminal portions 14 are respectively located between the plurality of pairs of holding pieces 32.

With reference to FIG. 12, the jig 55 is used to press a plurality of pairs of holding pieces 32. The plurality of pairs of holding pieces 32 may be pressed collectively or individually by using the jig 55. The plurality of pairs of holding pieces 32 are plastically deformed. Each of the plurality of pairs of sandwiching pieces 32 sandwiches a plurality of portions 13a of the plurality of terminal portions 13. Specifically, each of the plurality of pairs of sandwiching pieces 32 is crimped to the plurality of portions 13a of the plurality of terminal portions. Each of the plurality of pairs of sandwiching pieces 32 sandwiches a plurality of portions 14a of the plurality of terminal portions 14. Specifically, each of the plurality of pairs of sandwiching pieces 32 is crimped to the plurality of portions 14a of the plurality of terminal portions.

(Modification example)
With reference to FIG. 13, the power semiconductor module 1a of the modification of the present embodiment has a single in-line package (SIP) structure. Specifically, in the power semiconductor module 1a, the plurality of terminal portions 14 and the plurality of external connection terminals 30 corresponding to the plurality of terminal portions 14 are omitted. In the power semiconductor module 1a, the plurality of external connection terminal main bodies 31 may extend along the first main surface 10a (in the x direction). In another modification of the present embodiment, the control semiconductor chip 23, at least one die pad portion 12, and the conductive wire 28 may be omitted, and the conductive wire 27 is the power semiconductor chip 20 and the terminal portion 14. May be connected to.

The effects of the power semiconductor modules 1, 1a of the present embodiment and the manufacturing method thereof will be described.

The power semiconductor modules 1 and 1a of the present embodiment include a lead frame 10, at least one power semiconductor chip 20, a plurality of external connection terminals 30, and a sealing member 42. The lead frame 10 includes at least one die pad portion 11 and a plurality of terminal portions 13. Each of the plurality of external connection terminals 30 is connected to the plurality of terminal portions 13. The sealing member 42 seals at least one power semiconductor chip 20. The lead frame 10 has a first main surface 10a and a second main surface 10b on the opposite side of the first main surface 10a. At least one power semiconductor chip 20 is mounted on the first main surface 10a of at least one die pad portion 11, and is electrically connected to a plurality of terminal portions 13. Each of the plurality of terminal portions 13 includes a plurality of portions 13a exposed from the sealing member 42. Each of the plurality of external connection terminals 30 includes a plurality of pairs of holding pieces 32. Each of the plurality of pairs of sandwiching pieces 32 sandwiches a plurality of portions 13a of the plurality of terminal portions 13.

In the power semiconductor modules 1 and 1a of the present embodiment, the plurality of pairs of sandwiching pieces 32 of the plurality of external connection terminals 30 each sandwich the plurality of portions 13a of the plurality of terminal portions 13. Therefore, a plurality of external connection terminals 30 of various types can be easily connected to a plurality of terminal portions 13 of the lead frame 10. Further, unlike connecting a plurality of external connection terminals 30 to a plurality of terminal portions 13 using a joining member such as solder, a lead is used when connecting the plurality of external connection terminals 30 to the plurality of terminal portions 13. High temperature heat is prevented from being applied to the frame 10, the power semiconductor chip 20, and the sealing member 42. Therefore, the power semiconductor modules 1, 1a have a longer life.

In the power semiconductor modules 1 and 1a of the present embodiment, the plurality of pairs of sandwiching pieces 32 are respectively crimped to the plurality of portions 13a of the plurality of terminal portions 13. Therefore, a plurality of external connection terminals 30 of various types can be easily connected to a plurality of terminal portions 13 of the lead frame 10.

The power semiconductor modules 1 and 1a of the present embodiment further include an insulating member 38 provided between a plurality of external connection terminals 30. Therefore, even if the distance between the pair of external connection terminals 30 adjacent to each other decreases, the insulating member 38 can secure the insulation distance between the pair of external connection terminals 30 adjacent to each other. The power semiconductor modules 1, 1a can be miniaturized.

In the power semiconductor modules 1 and 1a of the present embodiment, the insulating member 38 is in contact with the sealing member 42. There is no gap between the sealing member 42 and the insulating member 38. Therefore, it is possible to prevent discharge from occurring between the plurality of terminal portions 13. The spacing between the plurality of terminal portions 13 can be reduced. The power semiconductor modules 1, 1a can be miniaturized.

The method for manufacturing the power semiconductor modules 1, 1a of the present embodiment includes mounting at least one power semiconductor chip 20 on at least one die pad portion 11 of the lead frame 10. The lead frame 10 includes at least one die pad portion 11 and a plurality of terminal portions 13. The lead frame 10 has a first main surface 10a and a second main surface 10b on the opposite side of the first main surface 10a. At least one power semiconductor chip 20 is mounted on the first main surface 10a of at least one die pad portion 11, and is electrically connected to a plurality of terminal portions 13. The method for manufacturing the power semiconductor modules 1, 1a of the present embodiment includes sealing at least one power semiconductor chip 20 with a sealing member 42. Each of the plurality of terminal portions 13 includes a plurality of portions 13a exposed from the sealing member 42. In the method of manufacturing the power semiconductor modules 1 and 1a of the present embodiment, a plurality of pairs of sandwiching pieces 32 sandwich a plurality of portions 13a of the plurality of terminal portions 13 so that a plurality of external connection terminals 30 are each connected to a plurality of terminals. It is provided to be connected to the unit 13. Each of the plurality of external connection terminals 30 includes a plurality of pairs of holding pieces 32.

The method for manufacturing the power semiconductor modules 1, 1a of the present embodiment includes a plurality of pairs of sandwiching pieces 32 of a plurality of external connection terminals 30 sandwiching a plurality of portions 13a of the plurality of terminal portions 13. Therefore, a plurality of external connection terminals 30 of various types can be easily connected to a plurality of terminal portions 13 of the lead frame 10. Further, unlike connecting a plurality of external connection terminals 30 to a plurality of terminal portions 13 using a joining member such as solder, a lead is used when connecting the plurality of external connection terminals 30 to the plurality of terminal portions 13. High temperature heat is prevented from being applied to the frame 10, the power semiconductor chip 20, and the sealing member 42. Therefore, it is possible to obtain power semiconductor modules 1, 1a having a longer life.

In the method for manufacturing the power semiconductor modules 1 and 1a of the present embodiment, when a plurality of pairs of sandwiching pieces 32 sandwich a plurality of portions 13a of the plurality of terminal portions 13, the plurality of pairs of sandwiching pieces 32 each have a plurality of terminals. Includes caulking into a plurality of portions 13a of the portion 13. According to the method for manufacturing the power semiconductor modules 1, 1a of the present embodiment, a plurality of external connection terminals 30 of various types can be easily connected to a plurality of terminal portions 13 of the lead frame 10.

The method for manufacturing the power semiconductor modules 1, 1a of the present embodiment further includes providing an insulating member 38 between the plurality of external connection terminals 30. Therefore, even if the distance between the pair of external connection terminals 30 adjacent to each other decreases, the insulating member 38 can secure the insulation distance between the pair of external connection terminals 30 adjacent to each other. According to the method for manufacturing the power semiconductor modules 1, 1a of the present embodiment, the miniaturized power semiconductor modules 1, 1a can be obtained.

Embodiment 2.
The power semiconductor module 1b of the second embodiment will be described with reference to FIGS. 14 and 15. The power semiconductor module 1b of the present embodiment has the same configuration as the power semiconductor module 1 of the first embodiment and has the same effect, but mainly in the following points, the power semiconductor module 1 of the first embodiment Is different from.

In the power semiconductor module 1b, a plurality of external connection terminal main bodies 31 are arranged in a staggered pattern in a plan view (plan view from the z direction) of the first main surface 10a of the lead frame 10 (at least one die pad portion 12). ing. Therefore, even if the distance in the y direction between the pair of external connection terminals 30 adjacent to each other decreases, the insulation distance between the pair of external connection terminals 30 adjacent to each other can be secured. The power semiconductor module 1b can be miniaturized.

Embodiment 3.
The power semiconductor module 1c of the third embodiment will be described with reference to FIG. The power semiconductor module 1c of the present embodiment has the same configuration as the power semiconductor module 1 of the first embodiment, but differs from the power semiconductor module 1 of the first embodiment mainly in the following points.

In the power semiconductor module 1c, the sealing member 42 is provided with a recess 42a. A part of the insulating member 38 (the tip of the insulating member 38 distal to the plurality of external connection terminal main bodies 31) is fitted in the recess 42a.

The manufacturing method of the power semiconductor module 1c of the present embodiment includes the same steps as the manufacturing method of the power semiconductor module 1 of the first embodiment, but mainly in the following points, the power semiconductor module 1 of the first embodiment It is different from the manufacturing method.

The method for manufacturing the power semiconductor module 1c according to the present embodiment further comprises fitting a part of the insulating member 38 into the recess 42a provided in the sealing member 42. Specifically, referring to FIG. 9, the insulating member 38 in which the plurality of external connection terminals 30 are integrated is placed on the top surface 51 of the base 50. The insulating member 38 is moved along the top surface 51 of the base 50. A part of the insulating member 38 (the tip of the insulating member 38 distal to the plurality of external connection terminal main bodies 31) is fitted into the recess 42a provided in the sealing member 42.

The power semiconductor module 1c of the present embodiment and the manufacturing method thereof have the following effects in addition to the effects of the power semiconductor module 1 of the first embodiment and the manufacturing method thereof.

In the power semiconductor module 1c of the present embodiment, the sealing member 42 is provided with a recess 42a. A part of the insulating member 38 is fitted in the recess 42a.

Since a part of the insulating member 38 is fitted in the recess 42a of the sealing member 42, it is possible to prevent the insulating member 38 from separating from the sealing member 42. Even if a force is applied to the plurality of external connection terminals 30, it is possible to prevent the plurality of external connection terminals 30 from being disconnected from the terminal portions 13 and 14. Further, it is possible to prevent a gap from being generated between the sealing member 42 and the insulating member 38. It is possible to prevent discharge from occurring between the plurality of terminal portions 13. It is possible to prevent discharge from occurring between the plurality of terminal portions 14.

The method for manufacturing the power semiconductor module 1c according to the present embodiment further comprises fitting a part of the insulating member 38 into the recess 42a provided in the sealing member 42.

Since the method for manufacturing the power semiconductor module 1c of the present embodiment includes fitting a part of the insulating member 38 into the recess 42a of the sealing member 42, the insulating member 38 is separated from the sealing member 42. Can be prevented. Even if a force is applied to the plurality of external connection terminals 30, it is possible to prevent the plurality of external connection terminals 30 from being disconnected from the terminal portions 13 and 14. Further, it is possible to prevent a gap from being generated between the sealing member 42 and the insulating member 38. It is possible to prevent discharge from occurring between the plurality of terminal portions 13. It is possible to prevent discharge from occurring between the plurality of terminal portions 14.

Embodiment 4.
The power semiconductor module 1d of the fourth embodiment will be described with reference to FIG. The power semiconductor module 1d of the present embodiment has the same configuration as the power semiconductor module 1 of the first embodiment, but is different from the power semiconductor module 1 of the first embodiment mainly in the following points.

In the power semiconductor module 1d, each of the plurality of pairs of holding pieces 32 includes a plurality of leaf springs. Due to the elastic force of the plurality of leaf springs, the plurality of pairs of sandwiching pieces 32 sandwich the plurality of portions 13a of the plurality of terminal portions 13. Due to the elastic force of the plurality of leaf springs, the plurality of pairs of sandwiching pieces 32 sandwich the plurality of portions 14a of the plurality of terminal portions 14.

The manufacturing method of the power semiconductor module 1d of the present embodiment includes the same steps as the manufacturing method of the power semiconductor module 1 of the first embodiment, but mainly in the following points, the power semiconductor module 1 of the first embodiment It is different from the manufacturing method.

In the method for manufacturing the power semiconductor module 1d of the present embodiment, each of the plurality of pairs of holding pieces 32 includes a plurality of leaf springs. The sandwiching of the plurality of portions 13a of the plurality of terminal portions 13 by the plurality of pairs of sandwiching pieces 32 includes inserting the plurality of pairs of sandwiching pieces 32 into the plurality of portions 13a of the plurality of terminal portions 13, respectively. The sandwiching of the plurality of portions 14a of the plurality of terminal portions 14 by the plurality of pairs of sandwiching pieces 32 includes inserting the plurality of pairs of sandwiching pieces 32 into the plurality of portions 14a of the plurality of terminal portions 14, respectively.

Specifically, referring to FIG. 9, the insulating member 38 in which the plurality of external connection terminals 30 are integrated is placed on the top surface 51 of the base 50. The insulating member 38 is moved along the top surface 51 of the base 50. Each of the plurality of pairs of holding pieces 32 is inserted into the plurality of portions 13a of the plurality of terminal portions 13. Due to the elastic force of the plurality of leaf springs, the plurality of pairs of sandwiching pieces 32 sandwich the plurality of portions 13a of the plurality of terminal portions 13. Each of the plurality of pairs of holding pieces 32 is inserted into the plurality of portions 14a of the plurality of terminal portions 14. Due to the elastic force of the plurality of leaf springs, the plurality of pairs of sandwiching pieces 32 sandwich the plurality of portions 14a of the plurality of terminal portions 14.

The power semiconductor module 1d of the present embodiment has the following effects in addition to the effects of the power semiconductor module 1 of the first embodiment.

In the power semiconductor module 1d of the present embodiment, each of the plurality of pairs of holding pieces 32 includes a plurality of leaf springs. Due to the elastic force of the plurality of leaf springs, the plurality of pairs of sandwiching pieces 32 sandwich the plurality of portions 13a of the plurality of terminal portions 13. Therefore, a plurality of external connection terminals 30 of various types can be easily connected to a plurality of terminal portions 13 of the lead frame 10.

In the method for manufacturing the power semiconductor module 1d of the present embodiment, each of the plurality of pairs of holding pieces 32 includes a plurality of leaf springs. The sandwiching of the plurality of portions 13a of the plurality of terminal portions 13 by the plurality of pairs of sandwiching pieces 32 includes inserting the plurality of pairs of sandwiching pieces 32 into the plurality of portions 13a of the plurality of terminal portions 13, respectively.

Therefore, the plurality of external connection terminals 30 can be connected to the plurality of terminal portions 13 without the jig 55 (see FIG. 12). According to the method for manufacturing the power semiconductor module 1d of the present embodiment, the power semiconductor module 1d can be manufactured with a smaller number of manufacturing steps.

Embodiment 5.
The power semiconductor module 1e of the fifth embodiment will be described with reference to FIG. The power semiconductor module 1e of the present embodiment has the same configuration as the power semiconductor module 1 of the first embodiment, but is different from the power semiconductor module 1 of the first embodiment mainly in the following points.

In the power semiconductor module 1e, a plurality of holes 13p are provided in each of the plurality of terminal portions 13. Each of the plurality of pairs of holding pieces 32 is engaged with the plurality of holes 13p. A plurality of holes 14p are provided in each of the plurality of terminal portions 14. Each of the plurality of pairs of holding pieces 32 is engaged with the plurality of holes 14p.

The manufacturing method of the power semiconductor module 1e of the present embodiment includes the same steps as the manufacturing method of the power semiconductor module 1 of the first embodiment, but mainly in the following points, the power semiconductor module 1 of the first embodiment It is different from the manufacturing method.

In the method for manufacturing the power semiconductor module 1e of the present embodiment, a plurality of holes 13p are provided in each of the plurality of terminal portions 13. A plurality of holes 14p are provided in each of the plurality of terminal portions 14. The sandwiching of the plurality of portions 13a of the plurality of terminal portions 13 by the plurality of pairs of sandwiching pieces 32 includes engaging the plurality of pairs of sandwiching pieces 32 with the plurality of holes 13p, respectively. The sandwiching of the plurality of portions 14a of the plurality of terminal portions 14 by the plurality of pairs of sandwiching pieces 32 includes engaging the plurality of pairs of sandwiching pieces 32 with the plurality of holes 14p, respectively.

Specifically, referring to FIG. 12, a plurality of pairs of holding pieces 32 are pressed by using the jig 55. The plurality of pairs of holding pieces 32 are plastically deformed. Each of the plurality of pairs of sandwiching pieces 32 sandwiches the plurality of portions 13a of the plurality of terminal portions 13 and engages with the plurality of holes 13p. Each of the plurality of pairs of sandwiching pieces 32 sandwiches the plurality of portions 14a of the plurality of terminal portions 14 and engages with the plurality of holes 14p.

The power semiconductor module 1e of the present embodiment has the following effects in addition to the effects of the power semiconductor module 1 of the first embodiment.

In the power semiconductor module 1e of the present embodiment, a plurality of holes 13p are provided in each of the plurality of terminal portions 13. Each of the plurality of pairs of holding pieces 32 is engaged with the plurality of holes 13p.

In the method for manufacturing the power semiconductor module 1e of the present embodiment, a plurality of holes 13p are provided in each of the plurality of terminal portions 13. The sandwiching of the plurality of portions 13a of the plurality of terminal portions 13 by the plurality of pairs of sandwiching pieces 32 includes engaging the plurality of pairs of sandwiching pieces 32 with the plurality of holes 13p, respectively.

According to the power semiconductor module 1e of the present embodiment and the manufacturing method thereof, the plurality of external connection terminals 30 are each more firmly connected to the plurality of terminal portions 13. It is possible to more reliably prevent the plurality of external connection terminals 30 from being disconnected from the plurality of terminal portions 13.

Embodiment 6.
The power semiconductor module 1f of the sixth embodiment will be described with reference to FIG. The power semiconductor module 1f of the present embodiment has the same configuration as the power semiconductor module 1 of the first embodiment, but is different from the power semiconductor module 1 of the first embodiment mainly in the following points.

The power semiconductor module 1f further includes a heat sink 60. The heat sink 60 dissipates the heat generated by the power semiconductor chip 20 to the outside of the power semiconductor module 1f. The heat sink 60 is made of a material having a high thermal conductivity, for example, copper (Cu) or aluminum (Al). The heat sink 60 may include radiating fins (not shown). A refrigerant such as water (not shown) may flow inside the heat sink 60.

The heat sink 60 is connected to the second main surface 10b of at least one die pad portion 11. Specifically, the heat sink 60 is connected to the second main surface 10b of at least one die pad portion 11 via the heat radiating sheet 40. The heat sink 60 is attached to the heat dissipation sheet 40 using a joining member (not shown) such as solder or brazing material.

The insulating member 38 is arranged between the plurality of external connection terminals 30 and the heat sink 60.

The manufacturing method of the power semiconductor module 1f of the present embodiment includes the same steps as the manufacturing method of the power semiconductor module 1 of the first embodiment, but mainly in the following points, the power semiconductor module 1 of the first embodiment It is different from the manufacturing method.

The method for manufacturing the power semiconductor module 1f of the present embodiment further comprises connecting the heat sink 60 to the second main surface 10b of at least one die pad portion 11. The insulating member 38 is arranged between the plurality of external connection terminals 30 and the heat sink 60. In one example, after the plurality of external connection terminals 30 are connected to the plurality of terminal portions 13 and 14, the heat sink 60 is connected to the second main surface 10b of at least one die pad portion 11. Specifically, a joining member such as a solder or a brazing material is arranged between the heat radiating sheet 40 and the heat sink 60. The heat sink 60 is attached to the heat dissipation sheet 40 using the joining member.

With reference to FIG. 20, in the power semiconductor module 1g of the modification of the present embodiment, the insulating member 38 may come into contact with the heat sink 60. The first main surface 10a of at least one die pad portion 11 may be flush with the first main surface 10a of the plurality of terminal portions 13, 14. The first main surface 10a of at least one die pad portion 11 may be flush with the first main surface 10a of at least one die pad portion 12. The second main surface 10b of at least one die pad portion 11 may be flush with the second main surface 10b of the plurality of terminal portions 13, 14. The second main surface 10b of at least one die pad portion 11 may be flush with the second main surface 10b of at least one die pad portion 12.

The power semiconductor modules 1f and 1g of the present embodiment have the following effects in addition to the effects of the power semiconductor module 1 of the first embodiment.

The power semiconductor modules 1f and 1g of the present embodiment further include a heat sink 60 connected to the second main surface 10b of at least one die pad portion 11. The insulating member 38 is arranged between the plurality of external connection terminals 30 and the heat sink 60.

The method for manufacturing the power semiconductor modules 1f and 1g according to the present embodiment further comprises connecting the heat sink 60 to the second main surface 10b of at least one die pad portion 11. The insulating member 38 is arranged between the plurality of external connection terminals 30 and the heat sink 60.

According to the power semiconductor modules 1f and 1g of the present embodiment and the manufacturing method thereof, the insulating member 38 prevents the generation of electric discharge between the plurality of terminal portions 13 and 14 and the heat sink 60. The distance between the plurality of terminals 13 and 14 and the heat sink 60 can be reduced. The power semiconductor modules 1f and 1g can be miniaturized. Further, since the power semiconductor modules 1f and 1g are provided with the heat sink 60, the heat dissipation characteristics of the power semiconductor modules 1f and 1g are improved.

In the power semiconductor module 1g of the present embodiment, the insulating member 38 is in contact with the heat sink 60. Therefore, the power semiconductor module 1g can be further miniaturized.

Embodiment 7.
In this embodiment, the power semiconductor modules 1, 1a, 1b, 1c, 1d, 1e, 1f, 1g according to any one of the first to sixth embodiments are applied to the power conversion device. The power conversion device 200 of the present embodiment is not particularly limited, but a case where it is a three-phase inverter will be described below.

The power conversion system shown in FIG. 21 includes a power supply 100, a power conversion device 200, and a load 300. The power supply 100 is a DC power supply, and supplies DC power to the power conversion device 200. The power supply 100 is not particularly limited, but may be composed of, for example, a DC system, a solar cell, or a storage battery, or may be composed of a rectifier circuit or an AC / DC converter connected to an AC system. The power supply 100 may be configured by a DC / DC converter that converts the DC power output from the DC system into another DC power.

The power conversion device 200 is a three-phase inverter connected between the power supply 100 and the load 300, converts the DC power supplied from the power supply 100 into AC power, and supplies AC power to the load 300. As shown in FIG. 21, the power conversion device 200 has a main conversion circuit 201 that converts DC power into AC power and outputs it, and a control circuit that outputs a control signal for controlling the main conversion circuit 201 to the main conversion circuit 201. It is equipped with 203.

The load 300 is a three-phase electric motor driven by AC power supplied from the power converter 200. The load 300 is not particularly limited, but is an electric motor mounted on various electric devices, and is used as an electric motor for, for example, a hybrid vehicle, an electric vehicle, a railway vehicle, an elevator, or an air conditioning device.

Hereinafter, the details of the power conversion device 200 will be described. The main conversion circuit 201 includes a switching element (not shown) and a freewheeling diode (not shown). By switching the voltage supplied from the power supply 100 by the switching element, the main conversion circuit 201 converts the DC power supplied from the power supply 100 into AC power and supplies it to the load 300. There are various specific circuit configurations of the main conversion circuit 201, but the main conversion circuit 201 according to the present embodiment is a two-level three-phase full bridge circuit, and has six switching elements and each switching element. It may consist of six anti-parallel freewheeling diodes. The power semiconductor modules 1, 1a, 1b, 1c, 1d, 1e, 1f, according to any one of the above-described first to sixth embodiments, are attached to at least one of the switching elements and the freewheeling diodes of the main conversion circuit 201. 1 g can be applied. As the power semiconductor module 202 constituting the main conversion circuit 201, any of the power semiconductor modules 1, 1a, 1b, 1c, 1d, 1e, 1f, 1g according to any one of the above-described first to sixth embodiments can be applied. .. The six switching elements are connected in series for each of the two switching elements to form an upper and lower arm, and each upper and lower arm constitutes each phase (U phase, V phase and W phase) of the full bridge circuit. Then, the output terminals of each upper and lower arm, that is, the three output terminals of the main conversion circuit 201 are connected to the load 300.

Further, the main conversion circuit 201 includes a drive circuit (not shown) for driving each switching element. The drive circuit may be built in the power semiconductor module 202 or may be provided outside the power semiconductor module 202. The drive circuit generates a drive signal for driving the switching element included in the main conversion circuit 201, and supplies the drive signal to the control electrode of the switching element of the main conversion circuit 201. Specifically, according to the control signal from the control circuit 203, a drive signal for turning on the switching element and a drive signal for turning off the switching element are output to the control electrodes of each switching element.

In the power conversion device 200 according to the present embodiment, as the power semiconductor module 202 included in the main conversion circuit 201, the power semiconductor modules 1, 1a, 1b, 1c, according to any one of the first to sixth embodiments, 1d, 1e, 1f, 1g are applied. Therefore, the power conversion device 200 according to the present embodiment has improved reliability.

In the present embodiment, an example of applying the present disclosure to a two-level three-phase inverter has been described, but the present invention is not limited to this, and can be applied to various power conversion devices. In the present embodiment, a two-level power conversion device is used, but a three-level power conversion device or a multi-level power conversion device may be used. The present disclosure may apply to a single-phase inverter if the power converter powers the single-phase load. When the power converter supplies power to a DC load or the like, the present disclosure may be applied to a DC / DC converter or an AC / DC converter.

The power conversion device to which the present disclosure is applied is not limited to the case where the load is an electric motor, for example, a power supply device of an electric discharge machine or a laser machine machine, or an induction heating cooker or a non-contact power supply system. Can be incorporated into a power supply. The power conversion device to which the present disclosure is applied can be used as a power conditioner for a photovoltaic power generation system, a power storage system, or the like.

It should be considered that the first to sixth embodiments disclosed this time are exemplary in all respects and not restrictive. As long as there is no contradiction, at least two of the first to sixth embodiments disclosed this time may be combined. The scope of the present disclosure is shown by the scope of claims rather than the above description, and is intended to include all modifications within the meaning and scope equivalent to the scope of claims.

1,1a, 1b, 1c, 1d, 1e, 1f, 1g Power semiconductor module, 10 lead frame, 10a 1st main surface, 10b 2nd main surface, 11,12 die pad part, 13,14 terminal part, 13a, 14a Part, 13p, 14p hole, 20 power semiconductor chip, 21,24 joining member, 23 control semiconductor chip, 26,27,28 conductive wire, 30 external connection terminal, 30m surface, 31 external connection terminal body, 32 holding piece , 38 Insulation member, 40 Heat dissipation sheet, 42 Sealing member, 42a recess, 45 mold, 48 inlet, 50 base, 51 top surface, 52 recess, 53 bottom surface, 55 jig, 60 heat sink, 100 power supply, 200 Power converter, 201 main conversion circuit, 202 power semiconductor module, 203 control circuit, 300 load.

Claims (18)

A lead frame including at least one die pad portion and a plurality of terminal portions,
With at least one power semiconductor chip,
A plurality of external connection terminals connected to the plurality of terminals, respectively,
A sealing member for sealing at least one power semiconductor chip is provided.
The lead frame has a first main surface and a second main surface opposite to the first main surface.
The at least one power semiconductor chip is mounted on the first main surface of the at least one die pad portion, and is electrically connected to the plurality of terminal portions.
Each of the plurality of terminal portions includes a plurality of portions exposed from the sealing member.
Each of the plurality of external connection terminals includes a plurality of pairs of holding pieces.
Each of the plurality of pairs of sandwiching pieces is a power semiconductor module that sandwiches the plurality of portions of the plurality of terminal portions. The power semiconductor module according to claim 1, wherein each of the plurality of pairs of sandwiching pieces is crimped to the plurality of portions of the plurality of terminal portions. The plurality of pairs of holding pieces each include a plurality of leaf springs.
The power semiconductor module according to claim 1, wherein the plurality of pairs of sandwiching pieces sandwich the plurality of portions of the plurality of terminal portions by the elastic force of the plurality of leaf springs. A plurality of holes are provided in each of the plurality of terminals.
The power semiconductor module according to any one of claims 1 to 3, wherein each of the plurality of pairs of holding pieces is engaged with the plurality of holes. The power semiconductor module according to any one of claims 1 to 4, further comprising an insulating member provided between the plurality of external connection terminals. The power semiconductor module according to claim 5, wherein the insulating member is in contact with the sealing member. The sealing member is provided with a recess, and the sealing member is provided with a recess.
The power semiconductor module according to claim 6, wherein a part of the insulating member is fitted in the recess. Further comprising a heat sink connected to the second main surface of the at least one die pad portion.
The power semiconductor module according to any one of claims 5 to 7, wherein the insulating member is arranged between the plurality of external connection terminals and the heat sink. The power semiconductor module according to claim 8, wherein the insulating member is in contact with the heat sink. Each of the plurality of external connection terminals includes a plurality of external connection terminal main bodies.
The plurality of external connection terminal main bodies are each connected to the plurality of pairs of holding pieces and extend along the normal of the first main surface.
The power semiconductor module according to any one of claims 1 to 9, wherein the plurality of external connection terminal main bodies are arranged in a staggered manner in a plan view of the first main surface. The lead frame comprises mounting at least one power semiconductor chip on at least one die pad portion of the lead frame, the lead frame includes the at least one die pad portion and a plurality of terminal portions, and the lead frame is a first. It has one main surface and a second main surface opposite to the first main surface, and the at least one power semiconductor chip is mounted on the first main surface of the at least one die pad portion. And is electrically connected to the plurality of terminals, and further
The plurality of terminals are each provided by sealing the at least one power semiconductor chip with a sealing member, and each of the plurality of terminals includes a plurality of portions exposed from the sealing member, and further.
A plurality of pairs of sandwiching pieces are provided to connect a plurality of external connection terminals to the plurality of terminal portions by sandwiching the plurality of portions of the plurality of terminal portions.
A method for manufacturing a power semiconductor module, wherein each of the plurality of external connection terminals includes the plurality of pairs of holding pieces. 11. The power according to claim 11, wherein the plurality of pairs of sandwiching pieces sandwiching the plurality of portions of the plurality of terminal portions includes crimping the plurality of pairs of sandwiching pieces to the plurality of terminal portions, respectively. Manufacturing method of semiconductor module. The plurality of pairs of holding pieces each include a plurality of leaf springs.
11. The fact that the plurality of pairs of sandwiching pieces sandwich the plurality of portions of the plurality of terminal portions includes inserting the plurality of pairs of sandwiching pieces into the plurality of portions of the plurality of terminal portions, respectively. The method for manufacturing a power semiconductor module according to the above. A plurality of holes are provided in each of the plurality of terminals.
It is claimed from claim 11 that the plurality of pairs of sandwiching pieces sandwiching the plurality of portions of the plurality of terminal portions includes engaging the plurality of pairs of sandwiching pieces with the plurality of holes, respectively. Item 3. The method for manufacturing a power semiconductor module according to any one of Items 13. The method for manufacturing a power semiconductor module according to any one of claims 11 to 14, further comprising providing an insulating member between the plurality of external connection terminals. The method for manufacturing a power semiconductor module according to claim 15, further comprising fitting a part of the insulating member into a recess provided in the sealing member. Further provided, a heat sink is connected to the second main surface of the at least one die pad portion.
The power semiconductor module according to claim 15, wherein the insulating member is arranged between the plurality of external connection terminals and the heat sink. A main conversion circuit having the power semiconductor module according to any one of claims 1 to 10 and converting and outputting input power.
A power conversion device including a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit.

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