JP2022039105A - Semiconductor module - Google Patents

Abstract

To provide a semiconductor module in which a current sensing terminal of a semiconductor switch is not directly exposed to the outside.SOLUTION: A semiconductor module 300 incorporates, in a housing, semiconductor switches 320u to 320w, a sensing resistor 340 connected between sensing terminals of the semiconductor switches and a reference voltage, and an LVIC 330 including a reference voltage generation circuit 332 which generates a reference voltage according to a resistance value of an external resistor 390 connectable to an external setting terminal 315, a comparison circuit 336 which compares a sense voltage generated in the sensing resistor according to the sense current flowing in the sense resistor and the reference voltage, and a control circuit 338 which controls the semiconductor switches using the result of comparison by the comparison circuit.SELECTED DRAWING: Figure 3

Description

The present invention relates to a semiconductor module.

Patent Document 1 describes a configuration in which an overcurrent detection unit 12 having a sense resistance is connected to a CIN terminal connected to the sense current electrodes of the IGBTs 4 to 6 in the power module (paragraph 0026, FIG. 1). .. In Patent Document 2, "IGBT 1 is connected to, for example, an inductive load 4, has a sense IGBT 2 for current detection, and its auxiliary emitter terminal 3 is connected to a sense resistor 6 which is a resistance for current detection. Is an integrated circuit 5 that controls the IGBT, and has a gate drive circuit 9, a current detector 8, a reference voltage circuit 7, and a sense resistor 6 built-in. "
[Prior Art Document]
[Patent Document]
[Patent Document 1] Japanese Patent Application Laid-Open No. 2015-33186 [Patent Document 2] Japanese Patent Application Laid-Open No. 9-260592

The sense terminals of semiconductor switches such as power MOSFETs (metal oxide semiconductor field effect transistors) and IGBTs (insulated gate bipolar transistors) have a lower electrostatic tolerance than other terminals. Therefore, if the sense terminal of the semiconductor switch is exposed to the outside of the semiconductor module as described in Patent Document 1, the semiconductor switch may be electrostatically destroyed depending on how it is handled at the time of manufacturing or the like. Further, in Patent Document 2, since the sense resistor 6 is built in the integrated circuit 5, it is difficult to change the detection level of the overcurrent.

In the first aspect of the present invention, a semiconductor module is provided. The semiconductor module may include a semiconductor switch. The semiconductor module may include a sense resistor connected between the sense terminal of the semiconductor switch and the reference potential. The semiconductor module may include a reference voltage generation circuit that generates a reference voltage according to the resistance value of an external resistor that can be connected to the external setting terminal. The semiconductor module may include a comparison circuit that compares the sense voltage generated in the sense resistor with the reference voltage according to the sense current flowing through the sense resistor. The semiconductor module may include a control circuit that controls a semiconductor switch using the comparison result of the comparison circuit. The semiconductor module may include a housing containing a semiconductor switch, a sense resistor, a reference voltage generation circuit, a comparison circuit, and a control circuit.

The reference voltage generator circuit may have a first resistor connected in series with an external resistor. The reference voltage generation circuit may generate a reference voltage by a resistance voltage divider using an external resistor and a first resistor.

The reference voltage generator circuit may have a second resistor connected in series with the first resistor and in parallel with the external resistor. The reference voltage generation circuit may generate a reference voltage by a combined resistance including an external resistance and a second resistance, and a resistance voltage divider using the first resistance.

The second resistance may have a larger resistance value than the first resistance.

The external resistance may be connected between the external setting terminal and the reference potential.

The semiconductor module may further include a filter circuit connected between the sense terminal and the comparison circuit.

The reference voltage generation circuit, comparison circuit, and control circuit may be incorporated in the integrated circuit. The sense resistance may be provided outside the integrated circuit.

The outline of the above invention does not list all the necessary features of the present invention. A subcombination of these feature groups can also be an invention.

The configuration of the semiconductor module 100 in the first comparative example is shown. The configuration of the semiconductor module 200 in the second comparative example is shown. It is the first figure which shows the structure of the semiconductor module 300 which concerns on this embodiment. It is a 2nd figure which shows the structure of the semiconductor module 300 which concerns on this embodiment.

Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention within the scope of the claims. Also, not all combinations of features described in the embodiments are essential to the means of solving the invention.

FIG. 1 shows the configuration of the semiconductor module 100 in the first comparative example together with the sense resistor 140 and the filter circuit 150 connected to the outside of the semiconductor module 100. The semiconductor module 100 is used as an example in an inverter for driving a three-phase motor. The semiconductor module 100 may include three sets of switching circuits for one phase in which the semiconductor switch of the upper arm and the semiconductor switch of the lower arm are connected in series and an output terminal is provided between the upper and lower arms. In this figure, for convenience of explanation, only the configuration relating to the lower arm of the semiconductor module 100 will be described.

The semiconductor module 100 has a plurality of control voltage terminals 102, a control ground terminal 104, a plurality of control input terminals 106u to w, and a plurality of output terminals 108u to w as external terminals connected to the outside of the semiconductor module 100. The emitter terminals 110u to 110u to w, the sense emitter terminal 112, and the sense input terminal 114 are provided. The control voltage terminal 102 inputs the power supply voltage Vcc for the control circuit in the semiconductor module 100. The control ground terminal 104 is connected to the ground for the control circuit in the semiconductor module 100.

The plurality of control input terminals 106u to w (hereinafter, also referred to as “control input terminal 106”) are below the control signals LUc and v phase instructing to turn on or off the semiconductor switch 120u of the lower arm of the u phase. The control signal LVc instructing to turn on or off the semiconductor switch 120v of the arm and the control signal LWc instructing to turn on or off the semiconductor switch 120w of the lower arm of the w phase are input. The plurality of output terminals 108u to w (hereinafter, also referred to as "output terminal 108") output the voltage of the u to w phase to the load.

The plurality of emitter terminals 110u to w (hereinafter, also referred to as "emitter terminal 110") are connected to the DC bus N on the negative side. The sense emitter terminal 112 is connected to the sense resistor 140. The sense input terminal 114 is connected to the filter circuit 150.

The semiconductor module 100 includes a plurality of semiconductor switches 120u to w and a LVIC 130. The semiconductor module 100 may include a plurality of semiconductor switches 120u to w and the LVIC 130 in a housing such as a resin-sealed package as an example.

A plurality of semiconductor switches 120u to w (hereinafter, also referred to as "semiconductor switch 120") are provided in the u to w phases of the lower arm. Each semiconductor switch 120 according to this embodiment has an IGBT having a collector and an emitter as a main terminal, a gate as a control terminal, and a sense emitter as a sense terminal, and a freewheeling diode connected in antiparallel to the IGBT. Instead, each semiconductor switch 120 may have a power MOSFET having a drain and source as main terminals, a gate as control terminals, and a source for sense as sense terminals. In this case, each semiconductor switch 120 may use the parasitic diode of the MOSFET as a freewheeling diode.

In the semiconductor switch 120u, the main terminals are connected between the output terminal 108u and the emitter terminal 110u. In the semiconductor switch 120v, the main terminals are connected between the output terminal 108v and the emitter terminal 110v. In the semiconductor switch 120w, the main terminals are connected between the output terminal 108w and the emitter terminal 110w. The sense terminal of each semiconductor switch 120 is connected to the sense emitter terminal 112. Here, the sense terminal of each semiconductor switch 120 normally causes a sense current for current detection, which is proportional to the main current flowing to the main terminal (emitter or the like) on the negative side of the semiconductor switch 120.

Here, a sense resistor 140 is connected between the sense emitter terminal 112 and the DC bus N on the negative side. When the sense current output from the sense emitter terminal 112 flows, the sense resistor 140 generates a sense voltage corresponding to the product of the resistance value and the current value of the sense current. As a result, the potential between the sense emitter terminal 112 and the sense resistance 140 becomes higher by the sense voltage than the reference potential which is the potential of the DC bus N on the negative side.

The filter circuit 150 is connected to the end of the sense resistor 140 on the sense emitter terminal 112 side, filters the sense voltage, and outputs the sense voltage to the sense input terminal 114. In the example of this figure, the filter circuit 150 is an RC integrating circuit, which smoothes the sense voltage and outputs it to the sense input terminal 114.

The LVIC 130 is an integrated circuit on the lower arm side (low voltage side) that is connected to the control voltage terminal 102 and the control ground terminal 104 and operates using the voltage between the control voltage terminal 102 and the control ground terminal 104 as the power supply voltage. The LVIC 130 is connected to a plurality of control input terminals 106u to w, and responds to an on / off instruction of each semiconductor switch 120 by the control signals LUc, LVc, and LWc input via the plurality of control input terminals 106u to w. , The control voltage supplied to the control terminal of each semiconductor switch 120 is switched.

Further, the LVIC 130 is connected to the sense input terminal 114 and inputs a sense voltage. The LVIC 130 detects that an overcurrent is flowing through the plurality of semiconductor switches 120u to w when the sense voltage is higher than the threshold value. The LVIC 130 may perform a protective operation such as switching off a plurality of semiconductor switches 120u to w as an example according to the detection of an overcurrent.

In the semiconductor module 100 shown above, since the sense resistor 140 is connected to the outside of the semiconductor module 100, the overcurrent detection level should be appropriately set by using a resistor having a suitable resistance value as the sense resistor 140. Can be done. On the other hand, in the semiconductor module 100, since the sense emitter terminal 112 connected to the sense terminal of each semiconductor switch 120 is exposed to the outside of the semiconductor module 100, it is necessary to be careful in handling so that each semiconductor switch 120 is not electrostatically destroyed. There is.

FIG. 2 shows the configuration of the semiconductor module 200 in the second comparative example together with a plurality of shunt resistors 240u to w connected to the outside of the semiconductor module 200, a filter circuit 250, a comparison circuit 260, and a detection circuit 270. Similar to the semiconductor module 100, the semiconductor module 200 is used as an example in an inverter for driving a three-phase motor. The semiconductor module 200 may include three sets of switching circuits for one phase in which the semiconductor switch of the upper arm and the semiconductor switch of the lower arm are connected in series and an output terminal is provided between the upper and lower arms. In this figure, for convenience of explanation, only the configuration relating to the lower arm of the semiconductor module 200 will be described. The description of the semiconductor module 200 having the same functions and configurations as the semiconductor module 100 of FIG. 1 will be omitted below.

The semiconductor module 200 has a plurality of control voltage terminals 202, a control ground terminal 204, a plurality of control input terminals 206u to w, and a plurality of output terminals 208u to w as external terminals connected to the outside of the semiconductor module 200. The emitter terminals 210u to w and the detection terminal 215 are provided. Of these, the control voltage terminal 202, the control ground terminal 204, the plurality of control input terminals 206u to w, the plurality of output terminals 208u to w, and the plurality of emitter terminals 210u to w are the semiconductor module 100 of FIG. The same applies to the control voltage terminal 102, the control ground terminal 104, the plurality of control input terminals 106u to w, the plurality of output terminals 108u to w, and the plurality of emitter terminals 110u to w. The detection terminal 215 is connected to the detection circuit 270, and an overcurrent detection signal indicating whether or not an overcurrent has been detected is input from the detection circuit 270.

The semiconductor module 200 includes a plurality of semiconductor switches 220u to w and a LVIC 230. The semiconductor module 200 may include a plurality of semiconductor switches 220u to w and LVIC230 in a housing such as a resin-sealed package as an example. The plurality of semiconductor switches 220u to w (hereinafter, also referred to as “semiconductor switch 220”) are the same as the plurality of semiconductor switches 120u to w in FIG. 1 except that they do not have a sense terminal.

Here, between each of the plurality of emitter terminals 210u to w (hereinafter, also referred to as “emitter terminal 210”) and the DC bus N on the negative side, a plurality of shunt resistances 240u to w (hereinafter, “shunt resistance 240”). It is also shown.) Each of them is connected. The shunt resistance 240 of each phase generates a sense voltage corresponding to the product of the resistance value of the shunt resistance 240 and the current value of the main current according to the flow of the main current from the semiconductor switch 220 of that phase. As a result, the potential between the emitter terminal 210 and the shunt resistor 240 is higher than the reference potential in the negative DC bus N by the sense voltage.

The filter circuit 250 is connected to the end of each shunt resistor 240 on the corresponding emitter terminal 210 side, filters the sense voltage from each shunt resistor 240 and outputs it to the comparison circuit 260. The filter circuit 250 may have a circuit similar to that of the filter circuit 150 of FIG. 1 corresponding to each shunt resistor 240.

The comparison circuit 260 is connected to the filter circuit 250. The comparison circuit 260 receives the sense voltage from each shunt resistor 240 via the filter circuit 250, and determines whether or not the sense voltage from each shunt resistor 240 exceeds the threshold value. The detection circuit 270 detects an overcurrent according to the fact that any of the sense voltages from each shunt resistor 240 exceeds the threshold value, and outputs a logic H (High) overcurrent detection signal to the detection terminal 215. ..

The LVIC 230 is the same as the LVIC 130 of FIG. 1 except that it is connected to the detection terminal 215 instead of the sense input terminal 114. The LVIC 230 has a protection operation such as switching off a plurality of semiconductor switches 220u to w as an example in response to receiving an overcurrent detection signal (that is, an overcurrent detection signal of logic H) indicating that an overcurrent has been detected. May be done.

In the semiconductor module 200 shown above, each semiconductor switch 220 does not have a sense terminal, and the external terminal directly connected to the sense terminal of each semiconductor switch 220 is not exposed to the outside of the semiconductor module 200. Further, by using a resistor having a suitable resistance value as each shunt resistance 240 or by setting the threshold value of the comparison circuit 260 to a suitable voltage value, it is possible to appropriately set the detection level of overcurrent. However, in the semiconductor module 200, since each shunt resistor 240 is provided on the path through which the main current flows between each output terminal 208 and the negative DC bus N, a large current flows through each shunt resistor 240. Therefore, in the semiconductor module 200, it is necessary to use a resistance having a large maximum allowable current as each shunt resistance 240, and there is a problem that the power loss due to each shunt resistance 240 becomes large.

FIG. 3 is a first diagram showing the configuration of the semiconductor module 300 according to the present embodiment. This figure shows the configuration of the semiconductor module 300 with respect to the lower arm side together with the external resistance 390. The semiconductor module 300 is used as an example in an inverter for driving a three-phase motor. The semiconductor module 300 is a power module including three sets of switching circuits for one phase in which a semiconductor switch of an upper arm and a semiconductor switch of a lower arm are connected in series and an output terminal is provided between the upper and lower arms. Here, the semiconductor module 300 may be an intelligent power module (IPM) having a built-in control circuit or the like for controlling each semiconductor switch. Hereinafter, the configuration of the lower arm of the semiconductor module 300 is shown in this figure, and the configuration of the upper arm of the semiconductor module 300 is shown in FIG. The following description of the semiconductor module 300 having the same functions and configurations as the semiconductor module 100 of FIG. 1 will be omitted.

The semiconductor module 300 has a control voltage terminal 302, a control ground terminal 304, a plurality of control input terminals 306u to w, and a plurality of output terminals 308u to, as external terminals connected to the outside of the semiconductor module 300 with respect to the lower arm. It includes w, a plurality of emitter terminals 310u to w, and an external setting terminal 315. Of these, the control voltage terminal 302, the control ground terminal 304, the plurality of control input terminals 306u to w, the plurality of output terminals 308u to w, and the plurality of emitter terminals 310u to w are the semiconductor module 100 of FIG. The same applies to the control voltage terminal 102, the control ground terminal 104, the plurality of control input terminals 106u to w, the plurality of output terminals 108u to w, and the plurality of emitter terminals 110u to w. The external setting terminal 315 makes it possible to connect an external resistance 390. Here, the external resistance 390 may be connected between the external setting terminal 315 and the reference potential of the negative DC bus N. The negative DC bus N may be connected to the ground 380 of the device including the semiconductor module 300.

The semiconductor module 300 includes a plurality of semiconductor switches 320u to w, a sense resistor 340, a filter circuit 350, and an LVIC 330. The semiconductor module 300 may include a plurality of semiconductor switches 320u to w, a sense resistor 340, a filter circuit 350, and a LVIC 330 in a housing such as a resin-sealed package as an example. The plurality of semiconductor switches 320u to w (hereinafter, also referred to as “semiconductor switch 320”) are the same as the plurality of semiconductor switches 120u to w in FIG.

The sense resistor 340 is connected between the sense terminals of the plurality of semiconductor switches 320 and the control ground terminal 304. As a result, the sense resistance 340 is connected to the reference potential from the negative DC bus N via the control ground terminal 304. The sense resistor 340 is the same as the sense resistor 140 of FIG. 1 except that it is built in the semiconductor module 300.

The filter circuit 350 is connected between the sense terminals of the plurality of semiconductor switches 320 and the comparison circuit 336. The filter circuit 350 is the same as the filter circuit 150 of FIG. 1 except that it is built in the semiconductor module 300. In the example of this figure, the filter circuit 350 is an RC integrator circuit, but instead, the filter circuit 350 may be another filter circuit capable of reducing noise transiently superimposed on the sense voltage.

The LVIC 330 is an integrated circuit on the lower arm side (low voltage side) that is connected to the control voltage terminal 302 and the control ground terminal 304 and operates using the voltage between the control voltage terminal 302 and the control ground terminal 304 as the power supply voltage. The LVIC 330 has a reference voltage generation circuit 332, a comparison circuit 336, and a control circuit 338.

The reference voltage generation circuit 332 is connected to the reference potential Vreg in the LVIC 330, the control ground terminal 304, and the external setting terminal 315. Here, the reference potential Vreg in the LVIC 330 is higher than the reference potential of the negative DC bus N. The reference voltage generation circuit 332 generates a reference voltage according to the resistance value of the external resistor 390 that can be connected to the external setting terminal 315. In this embodiment, the reference voltage generation circuit 332 includes a first resistor 333 connected in series with the external resistor 390. Thereby, the reference voltage generation circuit 332 generates the reference voltage from the point between the external resistance 390 and the first resistance 333 by the resistance voltage division using the external resistance 390 and the first resistance 333.

The reference voltage generation circuit 332 may include a second resistor 334 connected in series with the first resistor 333 and in parallel with the external resistor 390. When the second resistance 334 is provided, the reference voltage generation circuit 332 generates a reference voltage by a combined resistance including an external resistance 390 and a second resistance 334 and a resistance voltage divider using the first resistance 333. Here, the second resistance 334 may be used to generate a default reference voltage by the resistance voltage division of the first resistance 333 and the second resistance 334 when the external resistance 390 is not connected to the external setting terminal 315. .. Further, the second resistor 334 may be for pulling down the terminal of the LVIC 330 connected to the external setting terminal 315 and the negative terminal of the comparison circuit 336. In this case, the second resistance 334 may have a larger resistance value than the first resistance 333.

Further, the reference voltage generation circuit 332 may include a third resistance 335 between the external setting terminal 315 and the midpoint between the first resistance 333 and the second resistance 334. In this case, the reference voltage generation circuit 332 refers to the combined resistance of the third resistance 335 and the external resistance 390 connected in series and the second resistance 334 connected in parallel by the resistance voltage division between the first resistance 333. Generates voltage. The third resistance 335 alleviates the voltage change of the negative terminal of the comparison circuit 336 when static electricity is input from the external setting terminal 315. The third resistance 335 may be a wiring resistance.

The external resistance 390 according to this embodiment is connected to the low potential side of the negative terminal of the comparison circuit 336. Instead of this, the external resistor 390 may be connected to the high potential side of the negative terminal of the comparison circuit 336 in parallel with, for example, the first resistor 333.

The comparison circuit 336 is connected to the filter circuit 350 and the reference voltage generation circuit 332. The comparison circuit 336 receives the sense voltage generated in the sense resistor 340 according to the sense current flowing in the sense resistor 340 via the filter circuit 350, and compares it with the reference voltage generated by the reference voltage generation circuit 332. The comparison circuit 336 according to the present embodiment inputs a sense voltage to the positive terminal and a reference voltage to the negative terminal, and detects an overcurrent according to the value obtained by subtracting the reference voltage from the sense voltage becomes positive. The overcurrent detection signal of the logic H is output to the control circuit 338.

The control circuit 338 is connected to the control voltage terminal 302 and the control ground terminal 304, and operates using the voltage between the control voltage terminal 302 and the control ground terminal 304 as the power supply voltage. The control circuit 338 is connected to a plurality of control input terminals 306u to w, and is used to indicate on / off of each semiconductor switch 320 by the control signals LUc, LVc, and LWc input via the plurality of control input terminals 306u to w. The control voltage supplied to the control terminal of each semiconductor switch 320 is switched accordingly.

Further, the control circuit 338 controls each semiconductor switch 320 by using the comparison result by the comparison circuit 336. The control circuit 338, for example, switches off a plurality of semiconductor switches 320u to w in response to receiving an overcurrent detection signal (that is, an overcurrent detection signal of logic H) indicating that an overcurrent has been detected. A protective operation may be performed.

According to the semiconductor module 300 shown above, the sense resistor 340 can be connected inside the semiconductor module 300 so that the sense terminal of each semiconductor switch 320 is not directly exposed to the outside of the semiconductor module 300. As a result, the semiconductor module 300 can reduce the possibility that the sense terminal of each semiconductor switch 320 is electrostatically destroyed. Further, according to the semiconductor module 300, the reference voltage to be compared with the sense voltage can be appropriately set by connecting an external resistor 390 having a suitable resistance value, whereby the overcurrent detection level can be appropriately set. ..

In the semiconductor module 300 according to the present embodiment, the reference voltage generation circuit 332, the comparison circuit 336, and the control circuit 338 are built in the LVIC 330, and the sense resistor 340 and the filter circuit 350 are provided outside the LVIC 330. As a result, the LVIC 330 can connect a sense resistor having a different resistance value instead of the sense resistor 340, and can connect a filter circuit having different filter characteristics instead of the filter circuit 350, and uses a semiconductor switch having different characteristics. It can also be used for various types of semiconductor modules. Instead of this, the LVIC 330 may incorporate at least one of the sense resistor 340 or the filter circuit 350 in order to give priority to miniaturization and the like, and at least one of the reference voltage generation circuit 332 and the comparison circuit 336 to increase the degree of freedom. May be connected externally.

Further, in the semiconductor module 300 according to the present embodiment, the emitters of a plurality of semiconductor switches 320 are connected to each other, and one sense resistor 340 is used to generate a sense voltage, which is used for overcurrent detection. Instead, the semiconductor module 300 generates a sense voltage for each phase by using an individual sense resistor for each phase in the same manner as the shunt resistors 240u to w and the filter circuit 250 in FIG. 2, for overcurrent detection. You may use it. In this case, the semiconductor module 300 may have a comparison circuit 336 for each phase as in the comparison circuit 260 of FIG. 2, and the reference voltage generation circuit 332 and the external resistor 390 are shared by all phases to have a common reference voltage. You may use it.

FIG. 4 is a second diagram showing the configuration of the semiconductor module 300 according to the present embodiment. This figure shows the configuration of the u-phase upper arm in the semiconductor module 300 together with the external resistance 490u. The semiconductor module 300 may have the same configuration as in this figure for other phases. In this figure, the parts having the same functions and configurations as those on the lower arm side shown in FIG. 3 will be omitted below.

The semiconductor module 300 has a control voltage terminal 302, a control ground terminal 404u, a control input terminal 406u, an output terminal 308u, and a collector terminal as external terminals connected to the outside of the semiconductor module 300 with respect to the u-phase upper arm. It is provided with 410u and an external setting terminal 415u. Of these, the control voltage terminal 302 and the output terminal 308u are common to the control voltage terminal 302 and the output terminal 308u in FIG. The control ground terminal 404u is connected to a reference potential that serves as a ground for the control circuit of the upper arm of the u phase in the semiconductor module 300. Here, the ground of the upper arm of the u phase has the same potential as the output terminal 308u between the emitter of the semiconductor switch 420u and the collector of the semiconductor switch 320u.

The control input terminal 406u inputs a control signal HUc instructing to turn on or off the semiconductor switch 420u of the upper arm of the u phase. The collector terminal 410u is connected to the DC bus P on the positive side. Here, there is a potential difference of several hundred V between the DC bus P on the positive side and the DC bus N on the negative side as an example.

The external setting terminal 415u allows an external resistance 490u to be connected. Here, the external resistance 490u may be connected between the external setting terminal 415u and the reference potential supplied to the control ground terminal 404u.

The semiconductor module 300 includes a semiconductor switch 420u, a sense resistor 440u, a filter circuit 450u, and an HVIC 430u with respect to the u-phase upper arm. The semiconductor module 300 includes a semiconductor switch 420u, a sense resistor 440u, a filter circuit 450u, and an HVIC 430u as an example in a housing such as a resin-sealed package with v-phase and w-phase upper arms and under each phase. It may be built in with the circuit related to the arm.

In the semiconductor switch 420u, the main terminals are connected between the collector terminal 410u and the output terminal 308u. The semiconductor switch 420u is the same as the semiconductor switch 320 except that it is located on the upper arm side. The sense resistor 440u is connected between the sense terminal of the semiconductor switch 420u and the control ground terminal 404u. As a result, the sense resistance 440u is connected to the reference potential from the output terminal 308u via the control ground terminal 404u. The filter circuit 450u is connected between the sense terminal of the semiconductor switch 420u and the comparator 436u. The filter circuit 450u is the same as the filter circuit 350 of FIG.

The HVIC430u is an integrated circuit on the upper arm side (high voltage side) that is connected to the control voltage terminal 302 and the control ground terminal 404u and operates using the voltage between the control voltage terminal 302 and the control ground terminal 404u as the power supply voltage. The HVIC 430u has a booster circuit 431u, a reference voltage generation circuit 432u, a comparator 436u, and a control circuit 438u.

The booster circuit 431u boosts the power supply voltage Vcc with the negative DC bus N as the reference potential to the power supply voltage with the potential of the control ground terminal 404u as the reference potential. As an example, in the booster circuit 431u, the upper arm semiconductor switch 420u is turned off, the lower arm semiconductor switch 320u is turned on, and the potentials of the output terminal 308u and the control ground terminal 404u are substantially equal to the reference potential of the negative DC bus N. The power supply voltage Vcc is charged to the capacitor during the period of the same. The booster circuit 431u is controlled and grounded during a period in which the semiconductor switch 420u is turned on, the semiconductor switch 320 is turned off, and the potentials of the output terminal 308u and the control ground terminal 404u rise to or near the potential of the DC bus P on the positive side. A power supply voltage obtained by adding the power supply voltage Vcc charged to the capacitor to the potential of the terminal 404u may be supplied to the HVIC 430u.

The reference voltage generation circuit 432u is connected to the reference potential Vreg in the HVIC 430u, the control ground terminal 404u, and the external setting terminal 415u. Here, the reference potential Vreg in the HVIC 430u is higher than the reference potential of the control ground terminal 404u. The reference voltage generation circuit 432u is the same as the reference voltage generation circuit 332 in FIG. 3, and has a first resistance 433u corresponding to the first resistance 333 in FIG. 3, a second resistance 434u corresponding to the second resistance 334, and a third resistance. Since it has a third resistance 435u corresponding to 335, the description thereof will be omitted.

The comparator 436u is connected to the filter circuit 450u and the reference voltage generation circuit 432u. The comparator 436u is similar to the comparison circuit 336. The control circuit 438u is connected to the booster circuit 431u and the control ground terminal 404u, and operates using the voltage boosted by the booster circuit 431u as the power supply voltage. Since the control circuit 438u is the same as the control circuit 338 except that the control voltage supplied to the control terminal of the semiconductor switch 420u is switched according to the control signal HUc input via the control input terminal 406u, the description thereof is omitted. do.

In the above, the circuit on the upper arm side operates with the potential of the output terminal 308 as the reference potential (ground potential), but the potential of each output terminal 308 is different for each phase. Therefore, the semiconductor module 300 separately includes a circuit on the upper arm side for each phase. That is, the semiconductor module 300 includes a sense resistance 440 such as a sense resistance 440u, a filter circuit 450 such as a filter circuit 450u, a reference voltage generation circuit 432 such as a reference voltage generation circuit 432u, a comparator 436 such as a comparator 436u, a control circuit 438u, and the like. The control circuit 438 of the above may be provided for each phase.

According to the semiconductor module 300 shown above, it is possible to prevent the sense terminals of each semiconductor switch 420 such as the semiconductor switch 420u from being directly exposed to the outside of the semiconductor module 300 on the upper arm side as well as on the lower arm side. can. Further, according to the semiconductor module 300, the reference voltage to be compared with the sense voltage is appropriately set by connecting an external resistor 490u or the like having a suitable resistance value, thereby appropriately setting the detection level of the overcurrent on the upper arm side. Can be set.

The semiconductor module 300 has a built-in semiconductor switch for upper and lower arms for three phases. Alternatively, the semiconductor module 300 may have any number of phases, such as single-phase, two-phase, or four or more phases. Further, the semiconductor module 300 may have only a circuit related to either the upper arm or the lower arm.

Although the present invention has been described above using the embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It will be apparent to those skilled in the art that various changes or improvements can be made to the above embodiments. It is clear from the description of the claims that the form with such changes or improvements may be included in the technical scope of the present invention.

The order of execution of each process such as operation, procedure, step, and step in the apparatus, system, program, and method shown in the claims, specification, and drawings is particularly "before" and "prior to". It should be noted that it can be realized in any order unless the output of the previous process is used in the subsequent process. Even if the scope of claims, the specification, and the operation flow in the drawings are explained using "first", "next", etc. for convenience, it means that it is essential to carry out in this order. It's not a thing.

100 semiconductor module, 102 control voltage terminal, 104 control ground terminal, 106u to w control input terminal, 108u to w output terminal, 110u to w emitter terminal, 112 sense emitter terminal, 114 sense input terminal, 120u to w semiconductor switch, 130 LVIC, 140 sense resistance, 150 filter circuit, 200 semiconductor module, 202 control voltage terminal, 204 control ground terminal, 206u to w control input terminal, 208u to w output terminal, 210u to w emitter terminal, 215 detection terminal, 220u to w Semiconductor switch, 230 LVIC, 240u to w shunt resistance, 250 filter circuit, 260 comparison circuit, 270 detection circuit, 300 semiconductor module, 302 control voltage terminal, 304 control ground terminal, 306u to w control input terminal, 308u to w output terminal , 310u-w emitter terminal, 315 external setting terminal, 320u-w semiconductor switch, 330 LVIC, 332 reference voltage generation circuit, 333 first resistance, 334 second resistance, 335 third resistance, 336 comparison circuit, 338 control circuit, 340 sense resistance, 350 filter circuit, 380 ground, 390 external resistance, 404u control ground terminal, 406u control input terminal, 410u collector terminal, 415u external setting terminal, 420u semiconductor switch, 430u HVIC, 431u booster circuit, 432u reference voltage generation circuit 433u 1st resistance, 434u 2nd resistance, 435u 3rd resistance, 436u comparator, 438u control circuit, 440u sense resistance, 450u filter circuit, 490u external resistance

Claims (7)

With semiconductor switches
The sense resistance connected between the sense terminal and the reference potential of the semiconductor switch,
A reference voltage generation circuit that generates a reference voltage according to the resistance value of the external resistor that can be connected to the external setting terminal.
A comparison circuit that compares the sense voltage generated in the sense resistor with the reference voltage according to the sense current flowing through the sense resistor.
A control circuit that controls the semiconductor switch using the comparison result of the comparison circuit, and
A semiconductor module including the semiconductor switch, the sense resistor, the reference voltage generation circuit, the comparison circuit, and a housing including the control circuit. The reference voltage generation circuit is
It has a first resistance connected in series with the external resistance,
The semiconductor module according to claim 1, wherein the reference voltage is generated by the external resistance and the voltage division of the resistance using the first resistance. The reference voltage generation circuit is
It has a second resistance that is connected in series with the first resistance and in parallel with the external resistance.
The semiconductor module according to claim 2, wherein the reference voltage is generated by a resistance voltage divider using the external resistance, the combined resistance including the second resistance, and the first resistance. The semiconductor module according to claim 3, wherein the second resistance has a resistance value larger than that of the first resistance. The semiconductor module according to any one of claims 1 to 4, wherein the external resistance is connected between the external setting terminal and the reference potential. The semiconductor module according to any one of claims 1 to 5, further comprising a filter circuit connected between the sense terminal and the comparison circuit. The reference voltage generation circuit, the comparison circuit, and the control circuit are incorporated in an integrated circuit.
The semiconductor module according to any one of claims 1 to 6, wherein the sense resistance is provided outside the integrated circuit.

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