JP2022020953A - Manufacturing method of wafer with protective member, processing method of wafer, and protective member - Google Patents

Abstract

To reduce a residue of an adhesion agent after peeling of a protective member and an oscillation of a processed material at a processing, and reduce contaminations of a device due to a metal contained in the protective member.SOLUTION: A manufacturing method of a wafer with a protective member, comprises: a resin supply step of supplying a thermoplastic resin which has a plate state, a powder state, a massive state, a string state, a particle state, a film state, or a fluid state, and does not contain any natrium and zinc, to a support surface of a supporting table; a protective member formation step of heating the thermoplastic resin and forming a sheet-like protective member by expanding the thermoplastic resin along the support surface with a pressure while softening or melting; and a wafer with the protective member formation step of forming the wafer with the protective member by adhering one surface side of the heated sheet-like protective member and one of the one surface and the other surface of a disk-like wafer, where a semiconductor device is formed.SELECTED DRAWING: Figure 7

Description

The present invention provides a method for manufacturing a wafer with a protective member, and a wafer with a protective member, in which a protective member for protecting the wafer is adhered to one surface side of a wafer on which a semiconductor device is formed to manufacture a wafer with a protective member. It relates to a method of processing a wafer to be processed and a protective member for protecting the wafer.

When various plate-shaped workpieces such as semiconductor wafers, resin package substrates, ceramic substrates, and glass substrates are ground and thinned by a grinding device, or divided by a cutting blade or laser beam, the workpiece is chucked. It is sucked and held on the table.

For the purpose of preventing damage and contamination of the workpiece due to contact with the holding surface side of the work piece on the chuck table, and after the workpiece is divided into multiple chips, all the chips are collectively put together. For the purpose of transporting, an adhesive tape (protective member) is usually attached to the surface to be held of the workpiece (see, for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2013-21017

The adhesive tape generally has a laminated structure of a resin base material layer and a glue layer formed of a resin adhesive. When the adhesive layer of the adhesive tape is attached in close contact with the surface to be held, there is a problem that the residue of the adhesive remains on the workpiece when the adhesive tape is peeled off.

Further, since the glue layer acts as a cushion, the workpiece tends to vibrate during processing, and as a result, there is a problem that the workpiece is chipped or the divided chips are scattered. On the other hand, when the glue layer is eliminated and only the base material layer is used, a metal such as sodium contained in the base material layer may invade the device, resulting in malfunction of the device.

The present invention has been made in view of the above problems, and the residue of the adhesive after peeling of the protective member and the vibration of the workpiece during processing are reduced, and the metal contained in the protective member is used. The purpose is to reduce device contamination.

According to one aspect of the present invention, a protective member for protecting the wafer is brought into close contact with the one surface side of the wafer on which the semiconductor device is formed, out of one surface and the other surface of the disk-shaped wafer. A method for manufacturing a wafer with a protective member, which is a method for manufacturing a wafer with a protective member, wherein the support surface of the support table has a plate shape, a powder shape, a lump shape, a string shape, a granular shape, a film shape or a fluid shape, and A resin supply step for supplying a thermoplastic resin containing neither sodium nor zinc, and a sheet-like product in which the thermoplastic resin is spread along the support surface while being heated to soften or melt the thermoplastic resin. The protective member forming step for forming the protective member, one surface side of the heated sheet-shaped protective member, and the one surface side of the wafer are brought into close contact with each other to form a wafer with the protective member. A method for manufacturing a wafer with a protective member is provided, which comprises a wafer forming step with a member.

Preferably, the thermoplastic resin is a polyolefin.

Further, preferably, the method for manufacturing a wafer with a protective member further includes a protective member cooling step for cooling the protective member after the wafer forming step with the protective member.

According to another aspect of the present invention, it is a wafer processing method for processing a disk-shaped wafer in which a semiconductor device is formed on one surface side, and a plate-like, powder-like, or lump-like shape is formed on a support surface of a support table. A resin supply step of supplying a thermoplastic resin which is string-like, granular, film-like or fluid-like and contains neither sodium nor zinc, and while heating the thermoplastic resin to soften or melt it, A protective member forming step of spreading the thermoplastic resin along the support surface to form a sheet-shaped protective member, one surface side of the heated sheet-shaped protective member, and the one surface of the wafer. The wafer is processed with the protective member held by the chuck table of the wafer with the protective member formed through the wafer forming step with the protective member in which the side and the side are brought into close contact with each other to form the wafer with the protective member. A method for processing a wafer is provided, which comprises a processing step to be performed, and a peeling step for peeling the protective member from the wafer after the processing step.

According to still another aspect of the present invention, one surface of the disk-shaped wafer and the other surface are in close contact with the one surface side of the wafer on which the semiconductor device is formed to protect the wafer. Provided is a protective member in which one surface side of the protective member, which is in close contact with the one surface side of the wafer, is made of a thermoplastic resin containing neither sodium nor zinc.

Preferably, the thermoplastic resin is a polyolefin.

The protective member used in the method for manufacturing a wafer with a protective member according to one aspect of the present invention is formed by heating a thermoplastic resin to soften or melt it while spreading it, and does not have a glue layer. .. Therefore, even if the protective member adhered to the wafer is peeled off from the wafer, the adhesive residue does not remain on the wafer. Further, since the protective member does not have the glue layer, the vibration of the wafer during processing can be reduced as compared with the case where the protective member having the glue layer is used.

In addition, since the protective member does not have a glue layer, the protective member comes into direct contact with the wafer. Therefore, if the protective member contains sodium and zinc, the wafer may be contaminated. However, by forming the protective member with a thermoplastic resin that does not contain either sodium or zinc, even if the protective member is brought into close contact with the wafer, there is no risk of contamination by sodium and zinc, and devices caused by these metals can be used. No malfunction occurs.

It is a perspective view which shows an example of a wafer. It is a figure explaining the resin supply step. FIG. 3A is a diagram showing a state in which the pressing body is lowered, and FIG. 3B is a diagram showing a state in which the thermoplastic resin is pressed while being heated. It is a figure which shows the state which the protective member is peeled off from a support surface. It is a partial cross-sectional side view of a protection member sticking unit and the like. It is a figure which shows the state which a protective member is brought into close contact with a wafer. FIG. 7A is a diagram showing how the protective member is further brought into close contact with the surface side by the pressing body, and FIG. 7B is a diagram showing how the wafer with the protective member is cooled. It is a figure which shows the state of cutting out a protective member. It is a figure which shows the grinding apparatus and the like. It is a figure which shows the cutting apparatus and the like. It is a figure which shows the laser processing apparatus and the like. FIG. 12A is a diagram showing a peeling step for peeling the protective member from the wafer before division, and FIG. 12B is a diagram showing a peeling step for peeling the wafer after division from the protective member. It is a flow chart which shows the processing method of a wafer. 14 (A) is a diagram showing a powdery thermoplastic resin, FIG. 14 (B) is a diagram showing a ring-shaped thermoplastic resin, and FIG. 14 (C) is a diagram showing a plurality of tablet-shaped thermoplastic resins. 14 (D) is a diagram showing a film-shaped thermoplastic resin, FIG. 14 (E) is a diagram showing a plurality of block-shaped thermoplastic resins, and FIG. 14 (F) is a diagram showing. It is a figure showing a plurality of string-shaped thermoplastic resins, FIG. 14 (G) is a figure showing one string-shaped thermoplastic resin, and FIG. 14 (H) shows one block-shaped thermoplastic resin. It is a figure. FIG. 15 (A) is a diagram showing a state of supplying a fluid-like thermoplastic resin, and FIG. 15 (B) is a diagram showing a state of dropping a fluid-like thermoplastic resin. It is a figure which shows the modification which brought the protective member into close contact with a wafer. It is a figure which shows the wafer formation step with a protective member which concerns on 2nd Embodiment. It is a figure which shows the grinding step which concerns on 2nd Embodiment. It is a figure which shows the cutting step which concerns on 2nd Embodiment. It is a figure which shows the laser beam irradiation step which concerns on 2nd Embodiment. 21 (A) is a diagram showing a protective member forming step according to a third embodiment, and FIG. 21 (B) is a diagram showing a wafer forming step with a protective member according to a third embodiment.

An embodiment according to one aspect of the present invention will be described with reference to the accompanying drawings. First, the disk-shaped wafer 11 to be processed in the first embodiment will be described. FIG. 1 is a perspective view showing an example of the wafer 11.

The wafer 11 is made of a semiconductor material such as Si (silicon), SiC (silicon carbide), GaN (gallium nitride), and GaAs (gallium arsenide). On the surface 11a of the wafer 11, a plurality of scheduled division lines 13 are set in a grid pattern.

Devices (semiconductor devices) 15 such as ICs (Integrated Circuits) and LSIs (Large Scale Integration) are formed in each region on the surface (one surface) 11a side partitioned by the plurality of scheduled division lines 13. Each device 15 is provided with a plurality of bumps 17.

Each of the plurality of bumps 17 is made of a metal material such as gold, silver, or copper. Each bump 17 is electrically connected to the device 15 and projects, for example, by about 100 μm from the substantially flat top surface of the device 15.

The central region of the wafer 11 in which the plurality of devices 15 are arranged is the device region 19a, and the outer peripheral portion of the device region 19a does not have the device 15, bumps 17, etc., and is flatter than the device region 19a. It is surrounded by an outer peripheral surplus area 19b.

There are no restrictions on the material, shape, structure, size, etc. of the wafer 11. For example, the wafer 11 may be made of another semiconductor, a compound oxide such as LiNbO ₃ or LiTaO ₃ , a material such as sapphire, glass, or ceramics.

When processing the wafer 11, in order to protect the surface 11a side, the protective member 23 (see FIG. 3B and the like) is closely attached to the surface 11a side. A method of manufacturing a wafer with a protective member will be described with reference to FIGS. 2 to 8.

FIG. 2 is a diagram illustrating a resin supply step S10 for supplying a thermoplastic resin 21 on a substantially flat support surface 2a of a rectangular support table 2. The support table 2 is made of a metal such as aluminum or stainless steel, and a heating element 2b (see FIG. 3A and the like) is provided inside the support table 2.

The heating element 2b is, for example, a resistance heating type made of metal or ceramics, but is not limited to the resistance heating type, and heat may be generated by any method such as induction heating or dielectric heating. The same applies to the other heating elements used herein.

The support surface 2a of the support table 2 is covered with a mold release agent. As the mold release agent, for example, a fluorine-based resin layer (not shown) such as polytetrafluoroethylene (PTFE) is used.

By covering the support surface 2a with a mold release agent, it is possible to prevent direct contact between the thermoplastic resin 21 supplied on the support surface 2a and the metal material constituting the support table 2, and further, the thermoplasticity. There is an advantage that the protective member 23 formed of the resin 21 can be easily peeled off from the support surface 2a.

In the resin supply step S10, a thermoplastic resin 21 containing neither sodium nor zinc (hereinafter, simply, the thermoplastic resin 21) is used. As the thermoplastic resin 21, for example, the following materials are used.

Acrylic resin, methacrylic resin, vinyl resin, polyacetal, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, polyethylene, polypropylene, poly (4-methyl-1-pentene), poly (1-butene) and other polyolefins, polyethylene terephthalate. , Polyester such as polybutylene terephthalate, nylon-6, nylon-6,6, polyamide such as polymethoxylen adipamide, polyacrylate, polymethacrylate, polyvinyl chloride, polyetherimide, polyacrylonitrile, polycarbonate, polystyrene, Polysulfone, polyethersulfone, polyphenylene, ether polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, thermoplastic polyurethane resin, phenoxy resin, polyamideimide resin, fluororesin, ethylene-unsaturated carboxylic acid copolymer resin, ethylene-vinyl acetate One or more selected from a polymer resin, an ethylene-vinyl acetate-maleic anhydride ternary copolymer resin, an ethylene-vinyl acetate copolymer saponified resin, and an ethylene-vinyl alcohol copolymer resin.

The unsaturated carboxylic acids constituting the above ethylene-unsaturated carboxylic acid copolymer include acrylic acid, methacrylic acid, maleic acid, itaconic acid, monomethyl maleate, monoethyl maleate, maleic anhydride, and anhydrous. Itaconic acid and the like are exemplified. Here, the ethylene-unsaturated carboxylic acid copolymer includes not only a binary copolymer of ethylene and an unsaturated carboxylic acid, but also a multi-dimensional copolymer in which another monomer is copolymerized. Is. Other monomers that may be copolymerized with an ethylene-unsaturated carboxylic acid copolymer include vinyl acetate, vinyl esters such as vinyl propionate, methyl acrylate, ethyl acrylate, isobutyl acrylate, and the like. Examples thereof include unsaturated carboxylic acid esters such as n-butyl acrylate, methyl methacrylate, isobutyl methacrylate, dimethyl maleate, and diethyl maleate.

From the viewpoint of ease of processing, the melting point of the thermoplastic resin 21 is 40 ° C. or higher and 120 ° C. or lower, preferably 50 ° C. or higher and 100 ° C. or lower, and the softening point of the thermoplastic resin 21 is 30 ° C. or higher and 80 ° C. or lower. Hereinafter, it is desirable that the temperature is preferably 40 ° C. or higher and 70 ° C. or lower.

In the resin supply step S10, the thermoplastic resin 21 of any form is supplied onto the support surface 2a. In the example shown in FIG. 2, the disk-shaped (plate-shaped) thermoplastic resin 21 is arranged on the support surface 2a. A sheet-shaped protective member 23 is formed from the thermoplastic resin 21 (protective member forming step S20).

In the protective member forming step S20, the thermoplastic resin 21 is pressed by the pressing body 4 while being softened or melted by heating the thermoplastic resin 21 (see FIG. 3B). FIG. 3A is a diagram showing how the pressing body 4 is lowered, and FIG. 3B is a diagram showing how the pressing body 4 presses the thermoplastic resin 21 while heating it.

The pressing element 4 is made of a metal such as aluminum or stainless steel, and has a built-in heating element 4b. The bottom surface of the pressing body 4 is a substantially flat pressing surface 4a. The pressing surface 4a is covered with a mold release agent like the supporting surface 2a.

Therefore, direct contact between the thermoplastic resin 21 and the metal material constituting the pressing body 4 can be prevented, and the protective member 23 formed of the thermoplastic resin 21 can be easily peeled off from the pressing surface 4a. ..

When the thermoplastic resin 21 is heated and pressed, the heating element 2b and the heating element 4b are heated, and the support surface 2a and the pressing surface 4a are each heated to 40 ° C. or higher and 120 ° C. or lower (more preferably 50 ° C. or higher and 100 ° C.). Below).

Next, when the thermoplastic resin 21 softened or melted by heating is pressed by the pressing body 4, the thermoplastic resin 21 is spread along the support surface 2a and becomes a substantially circular protective member 23. In this way, one protective member 23 is formed in one pressing process.

The protective member 23 has, for example, a predetermined diameter larger than the diameter of the wafer 11. The protective member 23 has, for example, a predetermined thickness of 80 μm or more and 200 μm or less, although slight variations occur depending on the conditions at the time of formation.

After the protective member forming step S20, for example, an operator peels the protective member 23 from the support surface 2a. The protective member 23 may be peeled off from the support surface 2a by using a transport arm (not shown) or the like having a suction pad. FIG. 4 is a diagram showing how the protective member 23 is peeled off from the support surface 2a.

The peeled protective member 23 is conveyed to the protective member attaching unit 10 and attached to the surface 11a side of the above-mentioned wafer 11 (wafer forming step S30 with a protective member). Here, the protective member attaching unit 10 will be described with reference to FIG.

FIG. 5 is a partial cross-sectional side view of the protective member attaching unit 10 and the like. The protective member attaching unit 10 is made of a metal such as stainless steel and has a concave lower body 10a having an opening at the upper side. An annular plate 10b capable of supporting the protective member 23 is provided inside the opening of the lower body 10a.

A disk-shaped chuck table 12 is provided below the annular plate 10b. The chuck table 12 has a metal frame body 14a. A disk-shaped recess is formed in the upper portion of the frame body 14a, and a disk-shaped porous plate 14b made of porous ceramics is fixed to the recess.

The porous plate 14b is connected to a suction source (not shown) such as an ejector via a flow path 14d or the like formed in the frame body 14a. The upper surfaces of the frame body 14a and the porous plate 14b are flush with each other and form a substantially flat holding surface 12a.

An annular groove 14c is formed on the upper surface of the porous plate 14b. The annular groove 14c has a predetermined inner diameter larger than the diameter of the wafer 11, and functions as a relief groove for the cutting edge 24c (see FIG. 8).

An exhaust unit 16 is provided at the bottom of the lower body 10a. The exhaust unit 16 has a cylindrical exhaust passage 16a having one end connected to a space in the lower body 10a. A suction source 16b such as an ejector is connected to the other end of the exhaust passage 16a.

Above the lower body 10a, a concave upper body 10c having an opening below is arranged. The upper main body 10c has an opening having substantially the same shape as the opening of the lower main body 10a. The upper main body 10c can be raised and lowered relative to the lower main body 10a, and when the upper main body 10c is arranged on the lower main body 10a so that the openings overlap each other, a space shielded from the outside is formed.

An exhaust portion 18 is provided at the top of the upper main body 10c. The exhaust unit 18 has a cylindrical exhaust passage 18a having one end connected to a space in the upper main body 10c. A suction source 18b such as an ejector is connected to the other end of the exhaust passage 18a.

An air supply unit 20 is provided at a position different from the exhaust unit 18 on the top of the upper main body 10c. The air supply unit 20 has a cylindrical air supply path 20a whose one end is connected to the space in the upper main body 10c. Further, the solenoid valve 20b is provided in the air supply passage 20a.

Although omitted in FIG. 5, a disk-shaped pressing body 22 (see FIG. 7) is arranged in the recess of the upper main body 10c. The pressing body 22 is made of a metal such as stainless steel and has a substantially flat pressing surface 22a. The pressing surface 22a is covered with a mold release agent.

A heating element 22b is provided inside the pressing body 22. A ball screw type vertical movement mechanism (not shown) for moving the pressing body 22 in the vertical direction is connected to the upper part of the pressing body 22. A cutting mechanism 24 (see FIG. 8) is arranged on the outside of the lower main body 10a.

The cutting mechanism 24 can be moved above the lower main body 10a by a moving mechanism (not shown). The cutting mechanism 24 has a rod-shaped arm portion 24a arranged substantially parallel to the holding surface 12a. A rotary drive source (not shown) such as a motor is arranged above the arm portion 24a, and the output shaft 24b of the rotary drive source is substantially parallel to the direction orthogonal to the holding surface 12a (for example, the vertical direction). Have been placed.

The lower portion of the output shaft 24b is connected to the arm portion 24a between one end and the other end of the arm portion 24a, and the cutting edge 24c is connected to one end portion of the arm portion 24a. In the wafer forming step S30 with a protective member, first, the back surface (the other surface) 11b side of the wafer 11 is suction-held by the holding surface 12a.

Then, for example, the protective member 23 is transported by using a sheet transport device (not shown) and placed on the annular plate 10b. At this time, as shown in FIG. 5, the protective member 23 is supported by the annular plate 10b in such a manner that it does not come into contact with the surface 11a.

For example, by pressing the outer peripheral portion of the protective member 23 against the annular plate 10b with a pressing member (not shown), the protective member 23 is supported in such a manner that it does not come into contact with the surface 11a. Instead of using the pressing member, the size of the opening of the annular plate 10b may be reduced.

Specifically, the opening of the annular plate 10b may be made smaller so that the opening diameter defined by the inner peripheral end of the annular plate 10b is slightly larger than that of the annular groove 14c. After the protective member 23 is placed, the upper main body 10c is arranged on the lower main body 10a to form a space shielded from the outside, and the suction sources 16b and 18b are operated, respectively.

As a result, the pressure of the first space 10d composed of the protective member 23 and the lower main body 10a and the second space 10e composed of the protective member 23 and the upper main body 10c is reduced to about 1000 Pa, respectively.

After depressurization, the operations of the suction sources 16b and 18b are stopped, and the solenoid valve 20b is opened while maintaining the depressurized state of the first space 10d to open the upper main body 10c to the atmosphere. As a result, the atmospheric pressure in the recess of the upper main body 10c suddenly rises to atmospheric pressure, and the protective member 23 is pressed toward the surface 11a due to the atmospheric pressure difference.

By pressing, the protective member 23 can be deformed so as to follow the uneven shape on the surface 11a side, and the protective member 23 can be brought into close contact with the surface 11a side. FIG. 6 is a diagram showing a state in which the protective member 23 is brought into close contact with the wafer 11 by utilizing the atmospheric pressure difference.

Next, the pressing body 22 is moved above the protective member 23, and the protective member 23 is pressed toward the surface 11a by the heated pressing surface 22a (see FIG. 7A). FIG. 7A is a diagram showing a state in which the protective member 23 is further brought into close contact with the surface 11a side by the pressing body 22.

For example, the pressing body 22 is pressed at a predetermined temperature of 30 ° C. or higher and 80 ° C. or lower, and at a predetermined pressure of 0.2 MPa or higher and 0.8 MPa or lower for about 30 seconds. By bringing one surface (one surface) 23a side of the protective member 23 softened by heating and pressing into close contact with the surface 11a side, the protective member 23 is attached to the surface 11a side.

The one side 23a side is brought into close contact with the wafer 11 in such a manner that air or the like at the interface between the protective member 23 and the wafer 11 is removed, and the protective member 23 is fixed to the wafer 11 by atmospheric pressure. In this way, the wafer 25 with a protective member is formed. If air is introduced into the interface between the protective member 23 and the wafer 11, the protective member 23 can be easily peeled off from the wafer 11.

After the wafer forming step S30 with the protective member, the pressing body 22 is retracted and the lower main body 10a is moved upward. After that, the protective member 23 is cooled by a natural air cooling method, a forced air cooling method, or the like (protective member cooling step S40). In the protective member cooling step S40, the protective member 23 may be cooled by water cooling using cooling water, a Pelche element, or the like.

FIG. 7B is a diagram showing how the wafer 25 with a protective member is cooled. By cooling the protective member 23, the protective member 23 becomes harder than when it is heated, and the shape change of the protective member 23 is suppressed.

In the present embodiment, after the protective member cooling step S40, the output shaft 24b is rotated with the cutting edge 24c cut into the annular groove 14c. As a result, the protective member 23 is cut to have substantially the same diameter as the wafer 11. FIG. 8 is a diagram showing a state in which the protective member 23 is cut off.

Next, a processing method for processing the wafer 11 of the wafer 25 with a protective member will be described. In the following, the wafer 11 is machined in a state where the protective member 23 side cut to have substantially the same diameter as the wafer 11 is sucked and held by a chuck table (see FIG. 9 and the like) (machining step S50).

First, as a first example of the machining step S50, a grinding step using the grinding device 30 will be described. FIG. 9 is a diagram showing a grinding device 30 and the like. The grinding device 30 includes a chuck table 32.

The bottom of the chuck table 32 is connected to a rotation mechanism (not shown) such as a motor, and can rotate around a rotation axis substantially parallel to the Z-axis direction. The upper surface of the chuck table 32 is a holding surface 32a in which a negative pressure is generated as in the chuck table 12.

A grinding mechanism 34 is arranged above the chuck table 32 so as to face the holding surface 32a. The grinding mechanism 34 includes a spindle 36 that rotates around a rotation axis that is substantially parallel to the Z-axis direction.

The upper portion of the spindle 36 is housed in a rotatable manner within a spindle housing (not shown). An elevating mechanism (not shown) is connected to the spindle housing, and the spindle 36 also elevates and elevates as the elevating mechanism moves.

A disk-shaped wheel mount 38 is fixed to the lower end side of the spindle 36. An annular grinding wheel 40 having substantially the same diameter as the wheel mount 38 is mounted on the lower surface of the wheel mount 38.

The grinding wheel 40 includes an annular wheel base 42 made of a metal material such as aluminum or stainless steel. A plurality of grinding wheels 44 are provided on the lower surface of the wheel base 42.

Each grinding wheel 44 has a substantially rectangular parallelepiped shape. The plurality of grinding wheels 44 are arranged in such a manner that a gap is provided between the adjacent grinding wheels 44 in the circumferential direction of the lower surface of the wheel base 42.

The grinding wheel 44 is formed by mixing, for example, abrasive grains such as diamond and cBN (cubic boron nitride) with a binder such as metal, ceramics, and resin. However, there are no restrictions on the binder and the abrasive grains, and they are appropriately selected according to the specifications of the grinding wheel 44.

A nozzle 48 for supplying the grinding fluid 46 is arranged above the holding surface 32a at a position different from that of the grinding mechanism 34. In the grinding step (machining step S50), first, the surface 11a side of the wafer 11 is sucked and held by the holding surface 32a via the protective member 23.

Next, the grinding fluid 46 is supplied from the nozzle 48 while rotating the chuck table 32 and the spindle 36 in predetermined directions. When the spindle 36 is lowered and the grinding wheel 44 is pressed against the back surface 11b side, the back surface 11b side is ground.

Next, as a second example of the machining step S50, a cutting step using the cutting device 50 will be described. FIG. 10 is a diagram showing a cutting device 50 and the like. The cutting device 50 includes a chuck table 52.

The chuck table 52 is connected to a rotation mechanism (not shown) such as a motor, and can rotate around a rotation axis substantially parallel to the Z-axis direction. A table moving mechanism (not shown) is provided below the chuck table 52. The chuck table 52 can be moved in the machining feed direction (X-axis direction of the cutting device 50) together with the rotation mechanism by the table moving mechanism.

The upper surface of the chuck table 52 is a holding surface 52a in which a negative pressure is generated as in the chuck table 12. A cutting unit 54 is arranged above the holding surface 52a. The cutting unit 54 has a columnar spindle 56 arranged substantially parallel to the indexing feed direction (Y-axis direction of the cutting device 50).

A portion of the spindle 56 is housed in a rotatable manner by a cylindrical spindle housing (not shown). A rotary drive source (not shown) such as a motor is connected to one end of the spindle 56.

A cutting blade 58 having an annular cutting edge is mounted on the other end of the spindle 56. The cutting blade 58 shown in FIG. 10 is a hubless type (washer type) having an annular cutting edge, but is not limited to this, and may be a hub type.

In the cutting step (machining step S50), first, the surface 11a side of the wafer 11 is sucked and held by the holding surface 52a via the protective member 23. Next, the rotation angle of the chuck table 52 is adjusted to position the scheduled division line 13 substantially parallel to the X-axis direction.

Then, the cutting blade of the cutting blade 58 rotated at high speed is arranged on an extension line of one scheduled division line 13, and the lower end of the cutting blade 58 is positioned at a predetermined height between the holding surface 52a and the back surface 11b.

In this state, when the cutting blade 58 and the chuck table 52 are relatively moved in the machining feed direction, the scheduled division line 13 of the wafer 11 is cut along the machining feed direction. FIG. 10 shows a state in which the wafer 11 is partially cut in the thickness direction (so-called half cut). However, the wafer 11 may be cut so as to be cut in the thickness direction (so-called full cut).

Next, as a third example of the processing step S50, a laser beam irradiation step using the laser processing apparatus 60 will be described. FIG. 11 is a diagram showing a laser processing device 60 and the like. The laser processing device 60 includes a chuck table 62.

The chuck table 62 is connected to a rotation mechanism (not shown) such as a motor, and can rotate around a rotation axis substantially parallel to the Z-axis direction. A table moving mechanism (not shown) is provided below the chuck table 62.

The table moving mechanism moves the chuck table 62 together with the rotating mechanism in the machining feed direction (X-axis direction of the laser machining apparatus 60) and the index feed direction (Y-axis direction of the laser machining apparatus 60).

The upper surface of the chuck table 62 is a holding surface 62a in which a negative pressure is generated as in the chuck table 12. A laser beam irradiation unit 64 that irradiates a pulsed laser beam L is arranged above the holding surface 62a.

The laser beam irradiation unit 64 has a laser oscillator (not shown) including a rod-shaped laser medium formed of Nd: YAG, Nd: YVO ₄ , and the like. The laser beam L emitted from the laser oscillator passes through a predetermined optical system (not shown) including a condenser lens and the like, and is irradiated substantially vertically toward the holding surface 62a.

FIG. 11 shows an example in which the laser beam L has a wavelength transmitted through the wafer 11. In the laser beam irradiation step (machining step S50), first, the surface 11a side of the wafer 11 is sucked and held by the holding surface 62a via the protective member 23.

Next, the rotation angle of the chuck table 62 is adjusted to position the scheduled division line 13 substantially parallel to the X-axis direction. Then, with the condensing point of the laser beam L positioned inside the wafer 11, the condensing point and the chuck table 62 are relatively moved along the machining feed direction.

Since multiphoton absorption occurs in the vicinity of the condensing point, only the vicinity of the condensing point of the wafer 11 is processed. As a result, as shown in FIG. 11, a relatively fragile modified region 11c is formed along the planned division line 13.

The laser beam L may have a wavelength absorbed by the wafer 11 instead of the wavelength transmitted through the wafer 11. In this case, the wafer 11 can be ablated by moving the condensing point of the laser beam L along the scheduled division line 13 while the condensing point of the laser beam L is positioned on the back surface 11b.

After the processing step S50, the protective member 23 is peeled from the surface 11a side of the wafer 11 (peeling step S60). FIG. 12A is a diagram showing a peeling step S60 for peeling the protective member 23 from the wafer 11 before division.

In the example shown in FIG. 12A, the back surface 11b side is attached to the central portion of the protective tape 29 attached to one surface of the annular frame 27 so as to close the opening of the metal annular frame 27, and then the back surface 11b side is attached. While heating the protective member 23, the protective member 23 is peeled off from the surface 11a side.

Since the protective member 23 is only in close contact with the surface 11a, for example, if a gap is formed between the surface 11a and the one surface 23a at the edge of the wafer 11 and air is introduced, the protective member 23 can be placed on the surface 11a. Can be easily peeled off from the side.

In the peeling step S60, for example, the protective member 23 may be heated to 30 ° C. or higher and 80 ° C. or lower. Since the protective member 23 becomes flexible by heating, the protective member 23 can be easily peeled off. The peeling operation may be performed by an operator or by using a dedicated peeling device (not shown).

The protective tape 29 for transfer used in the peeling step S60 may be formed of the above-mentioned thermoplastic resin 21, or may be a normal adhesive tape having a resin base material layer and a glue layer. ..

FIG. 12B is a diagram showing a peeling step S60 for peeling the divided wafer 11 from the protective member 23. In addition to this, the protective member 23 may be peeled off from the wafer 11 before division without replacing the wafer 11 before division with the protective tape 29.

By the way, when the wafer 11 is divided into a plurality of chips (for example, device chips such as WL-CSP (Wafer Level Chip Size Package)) 31, the protective member 23 is sucked and held by a chuck table (not shown) and picked up. The device (not shown) sucks and conveys the back surface 11b side of each chip 31.

The chip 31 may be peeled off from the protective member 23 while the protective member 23 is heated. FIG. 13 is a flow chart showing a processing method of the wafer 11 including a method of manufacturing the wafer 25 with a protective member.

The protective member 23 of the present embodiment is formed by heating and spreading the thermoplastic resin 21 while softening or melting it, and does not have a glue layer. Therefore, even if the protective member 23 adhered to the wafer 11 is peeled off from the wafer 11, the adhesive residue does not remain on the wafer 11. Further, since the protective member 23 does not have the glue layer, the vibration of the wafer 11 during processing can be reduced as compared with the protective member having the glue layer.

In addition, since the protective member 23 does not have a glue layer, the protective member 23 comes into direct contact with the wafer 11. Therefore, if the protective member contains sodium and zinc, the wafer 11 will be contaminated.

In a normal adhesive tape having a base material layer and a glue layer, about several wt% sodium or zinc may be detected. It is presumed that metals such as sodium and zinc are intentionally added to the substrate layer to produce a chewy (ie, supple and tough) adhesive tape. Therefore, when a normal adhesive tape is attached to the wafer 11, the wafer 11 may be contaminated with sodium or the like.

However, in the present embodiment, the protective member 23 is formed of the thermoplastic resin 21 containing neither sodium nor zinc. Therefore, even if the protective member 23 is brought into close contact with the wafer 11, there is no risk of contamination by sodium and zinc, and the device 15 does not malfunction due to these metals.

The thermoplastic resin 21 and the protective member 23 of the present embodiment do not contain either sodium or zinc in the first place. This can be seen even if the thermoplastic resin 21 and the protective member 23 are analyzed using, for example, ICP-MS (Inductively Coupled Plasma Mass Spectrometry), secondary ion mass spectrometry (SIMS), or the like. And zinc is below the detection limit.

By the way, the form of the thermoplastic resin 21 supplied to the support surface 2a in the resin supply step S10 is not limited to the plate shape. 14 (A) to 14 (H) show various forms of thermoplastic resin 21 supplied to the support surface 2a.

14 (A) is a diagram showing a powdery thermoplastic resin 21, FIG. 14 (B) is a diagram showing a ring-shaped (lump) thermoplastic resin 21, and FIG. 14 (C) is a diagram showing a ring-shaped (lump) thermoplastic resin 21. It is a figure which shows a plurality of tablet-like (granular) thermoplastic resins 21. Further, FIG. 14 (D) is a diagram showing a film-shaped thermoplastic resin 21 that is thinner than the plate-shaped thermoplastic resin 21 shown in FIG. 2.

When the thermoplastic resin 21 is in the form of a film or a plate, it is formed of a first thermoplastic resin layer (hereinafter referred to as the first layer) containing neither sodium nor zinc and a material different from the first layer. The protective member 23 may be composed of a laminate having a second thermoplastic resin layer (hereinafter referred to as a second layer) that is harder than the first layer.

For example, the first layer is formed of the above-mentioned polyolefin (PO), and the second layer is formed of polyethylene terephthalate (PET). However, the materials of the first layer and the second layer are not limited to this example. Further, the protective member 23 may be formed of three or more layers.

When the first layer does not contain either sodium or zinc and is a relatively soft layer, the first layer is located on the one side 23a side of the protective member 23, and the second layer is the one side 23a. Located on the other side.

14 (E) is a diagram showing a plurality of block-shaped (lump-shaped) thermoplastic resins 21, and FIG. 14 (F) is a diagram showing a plurality of string-shaped thermoplastic resins 21. FIG. 14 (F) is a diagram showing a plurality of string-shaped thermoplastic resins 21. G) is a diagram showing one string-shaped thermoplastic resin 21.

FIG. 14 (H) is a diagram showing one block-shaped (lump-shaped) thermoplastic resin 21. In the example shown in FIG. 14H, the rectangular parallelepiped thermoplastic resin 21 is supplied to the support surface 2a by cutting a part of the mass of the prismatic thermoplastic resin 21.

In addition to this, a fluid (liquid) thermoplastic resin 21 may be supplied to the support surface 2a. FIG. 15A is a diagram showing a state in which the thermoplastic resin 21 in the form of a fluid is supplied by using the heating pressing unit 66. The heating pressing unit 66 has a cylindrical heating portion 68.

A heating element (not shown) is built in the heating unit 68. A columnar (lumpy) thermoplastic resin 21 is inserted into the through opening of the heating portion 68. The longitudinal direction of the cylinder is arranged substantially perpendicular to the support surface 2a, and a pressing body 70 having substantially the same diameter as the through opening is arranged above the through opening of the heating portion 68.

If the solid thermoplastic resin 21 is inserted into the through opening of the heating portion 68 and heated above the melting point, and the thermoplastic resin 21 is pushed downward by the pressing body 70, the fluid thermoplastic resin 21 is supported. It is supplied to the surface 2a.

The material of the heating portion 68 and the pressing body 70 may be made of metal or ceramics. In this case, at least the portion of the heating portion 68 and the pressing body 70 that comes into contact with the thermoplastic resin 21 is covered with the above-mentioned mold release agent.

Instead of the heating and pressing unit 66, as shown in FIG. 15B, the fluid-like thermoplastic resin 21 may be dropped from above the support surface 2a onto the support surface 2a. FIG. 15B is a diagram showing a state in which the fluid-like thermoplastic resin 21 is dropped from the resin supply device 72 that supplies the fluid-like resin to the support surface 2a.

By the way, when the protective member 23 is brought into close contact with the wafer 11, the wafer 11 may be pressed instead of the protective member 23. For example, the protective member 23 is brought into close contact with the wafer 11 by utilizing the atmospheric pressure difference generated in the protective member attaching unit 10, and then the wafer 11 is conveyed to the disk-shaped support table 74 (see FIG. 16).

The support table 74 has a circular support surface 74a having a diameter larger than the diameter of the protective member 23. The support surface 74a is covered with a mold release agent, and the support table 74 contains a heating element 74b. A disk-shaped pressing body 76 is arranged above the support table 74.

The pressing body 76 has a diameter larger than that of the wafer 11 and has a circular pressing surface 76a in contact with the wafer 11. A heating element 76b is built in the pressing body 76, and a ball screw type vertical movement mechanism (not shown) for moving the pressing body 76 up and down is connected to the upper part of the pressing body 76.

When the protective member 23 is further brought into close contact with the wafer 11, the back surface 11b side of the wafer 11 supported by the support table 74 is pressed so that the back surface 11b is exposed upward while the heating elements 74b and 76b are heated. Press with 76.

FIG. 16 is a diagram showing a modified example in which the protective member 23 is brought into close contact with the wafer 11 by pressing the wafer 11 with the pressing body 76. When pressing the wafer 11, the heating element 74b of the support table 74 may not be heated, or the heating element 74b may not be provided.

By heating only the heating element 76b arranged on the relatively hard wafer 11 side, it is possible to suppress excessive deformation of the protective member 23 and secure the adhesion between the protective member 23 and the wafer 11 or the like. Thereby, the wafer 25 with a protective member can be formed.

By the way, even if the protective member 23 is brought into close contact with the wafer 11 by using only the support table 74 and the pressing body 76 without using the atmospheric pressure difference generated in the protective member attaching unit 10 to bring the protective member 23 into close contact with the wafer 11. good. In this case as well, the heating element 74b of the support table 74 may not be heated, or the heating element 74b may not be provided.

After the protective member 23 is brought into close contact with the wafer 11, the protective member 23 may be cut along the outer peripheral portion of the wafer 11 by using the cutting mechanism 24 shown in FIG. Next, the second embodiment will be described with reference to FIG. 17 and the like.

In the second embodiment, the frame unit forming device 80 is used to attach one surface 23a side of the above-mentioned protective member 23 to one surface of the metal annular frame 27 and the surface 11a side of the wafer 11 to form a frame. A unit 33 (wafer 25 with a protective member) is formed.

The frame unit forming device 80 has a chuck table 82. The chuck table 82 has a metal frame 84. The frame body 84 has a concave portion in the central portion of a circle, and a disk-shaped porous plate 86 made of porous ceramics is fixed to the concave portion.

The upper surface of the central portion of the frame body 84 and the upper surface of the porous plate 86 are flush with each other, forming a substantially flat holding surface 82a. The diameter of the holding surface 82a is set to a value larger than the diameter of the wafer 11 and smaller than the opening diameter of the annular frame 27.

An annular support surface 84a, which is lower than the holding surface 82a by a predetermined height and is substantially flat, is formed on the outer peripheral portion of the holding surface 82a. The height difference between the holding surface 82a and the supporting surface 84a is adjusted to be substantially equal to the value obtained by subtracting the thickness of the wafer 11 from the thickness of the annular frame 27.

Below the recess of the frame body 84, a flow path 84b corresponding to the above-mentioned flow path 14d is formed. Further, a heating element 84c is provided inside the frame body 84. A pressing body 76 shown in FIG. 16 is arranged above the holding surface 82a and the supporting surface 84a. A ball screw type vertical movement mechanism (not shown) for moving the pressing body 76 in the vertical direction is connected to the upper part of the pressing body 76.

When forming the frame unit 33, the above-mentioned S10 and S20 are sequentially performed, then the wafer 11 is arranged on the holding surface 82a, and the annular frame 27 is arranged on the support surface 84a.

After that, the pressing body 76 is moved downward, and the surface 11a side and one surface side of the annular frame 27 are heated and pressed by the pressing body 76 via the protective member 23. At this time, the heating element 84c of the frame body 84 is also heated. As a result, the protective member 23 is brought into close contact with the wafer 11 and the annular frame 27.

FIG. 17 is a diagram showing a wafer forming step S30 with a protective member according to the second embodiment. It should be noted that unevenness may be formed on one surface side of the annular frame 27 that is in close contact with the protective member 23 so as to be easy to be in close contact with the protective member 23.

By the way, when pressing, the heating element 76b of the pressing body 76 may not be heated, but only the heating element 84c of the frame body 84 may be heated. By heating the relatively hard wafer 11 and the heating element 84c arranged on the annular frame 27 side without heating the heating element 76b arranged on the protective member 23 side, excessive deformation of the protective member 23 is suppressed. At the same time, the adhesion between the protective member 23 and the wafer 11 or the like can be ensured.

After the wafer forming step S30 with the protective member, the protective member cooling step S40 is performed as in the first embodiment. When the protective member 23 is larger than the diameter of the annular frame 27, the extra protective member 23 protruding from the annular frame 27 may be cut off after the protective member cooling step S40.

Next, a processing step S50 for processing the wafer 11 in the state of the frame unit 33 will be described. The grinding step will be described as a first example of the machining step S50 in the second embodiment. FIG. 18 is a diagram showing a grinding step according to the second embodiment.

The configuration of the grinding device 88 is substantially the same as that of the grinding device 30 shown in FIG. However, on the side of the chuck table 32 of the grinding device 88, a plurality of clamps 90 for sandwiching the annular frame 27 are provided at different positions in the circumferential direction of the chuck table 32. This point is different from the grinding device 30.

In the grinding step, the front surface 11a side is sucked and held by the holding surface 32a via the protective member 23, the annular frame 27 is sandwiched by a plurality of clamps 90, and then the back surface 11b is similar to the grinding step of the first embodiment. Grind the side.

Next, a cutting step will be described as a second example of the machining step S50 in the second embodiment. FIG. 19 is a diagram showing a cutting step according to the second embodiment.

The configuration of the cutting device 92 is substantially the same as that of the cutting device 50 shown in FIG. However, on the side of the chuck table 52 of the cutting device 92, a plurality of clamps 90 are provided at different positions in the circumferential direction of the chuck table 52. This point is different from the cutting device 50.

In the cutting step, the surface 11a side is sucked and held by the holding surface 52a via the protective member 23, the annular frame 27 is sandwiched by a plurality of clamps 90, and then the wafer 11 is performed in the same manner as in the cutting step of the first embodiment. To cut. Although FIG. 19 shows an example in which the wafer 11 is fully cut, the wafer 11 may be half-cut.

Next, a laser beam irradiation step will be described as a third example of the processing step S50 in the second embodiment. FIG. 20 is a diagram showing a laser beam irradiation step according to the second embodiment.

The configuration of the laser processing device 94 is substantially the same as that of the laser processing device 60 shown in FIG. However, on the side of the chuck table 62 of the laser processing apparatus 94, a plurality of clamps 90 are provided at different positions in the circumferential direction of the chuck table 62. This point is different from the laser processing apparatus 60.

In the laser beam irradiation step, the surface 11a side is sucked and held by the holding surface 62a via the protective member 23, the annular frame 27 is sandwiched by a plurality of clamps 90, and then the same as in the laser beam irradiation step of the first embodiment. Therefore, the reforming region 11c is formed on the wafer 11. The wafer 11 may be ablated using a laser beam having a wavelength absorbed by the wafer 11.

After the processing step S50, the protective member 23 is peeled from the surface 11a side of the wafer 11 (peeling step S60). In the peeling step S60, as shown in FIG. 12A, the wafer 11 may be attached to the protective tape 29, and then the protective member 23 on the surface 11a side may be peeled off. Further, as shown in FIG. 12B, the divided wafer 11 may be peeled from the protective member 23.

Since the protective member 23 of the present embodiment also does not have a glue layer, even if the protective member 23 is peeled off from the wafer 11, the adhesive residue does not remain on the wafer 11. Further, since the protective member 23 does not have the glue layer, the vibration of the wafer 11 during processing can be reduced as compared with the protective member having the glue layer.

In addition, since the protective member 23 is formed of the thermoplastic resin 21 containing neither sodium nor zinc, even if the protective member 23 is brought into close contact with the wafer 11, there is no risk of contamination by sodium and zinc, and these metals have no risk of contamination. There is no malfunction of the device 15 due to this.

Next, the protective member 23 according to the third embodiment will be described. In the third embodiment, the protective member has a disk-shaped thin film portion 23b (sheet-shaped region) and an annular convex portion 23c integrally formed with the thin film portion 23b so as to surround the outer peripheral portion of the thin film portion 23b. Form 23.

The support table 2 (see FIG. 21A) according to the third embodiment has a circular central support surface 2a ₁ having a diameter larger than the diameter of the wafer 11. An annular recess 2a ₂ is provided on the outer peripheral portion of the central support surface 2a ₁ so as to surround the central support surface 2a ₁ .

Further, an outer peripheral support surface 2a ₃ is provided on the outer peripheral portion of the annular recess 2a ₂ so as to surround the annular recess 2a ₂ . The heights of the central support surface 2a ₁ and the outer peripheral support surface 2a ₃ are substantially the same, and the annular recess 2a ₂ is recessed with respect to the central support surface 2a ₁ and the outer peripheral support surface 2a ₃ .

The depth of the annular recess 2a ₂ is adjusted to be substantially the same as, for example, the thickness of the annular frame 27 described above. The central support surface 2a ₁ , the annular recess 2a ₂ , and the outer peripheral support surface 2a ₃ are covered with a mold release agent.

When the protective member 23 having the thin film portion 23b and the annular convex portion 23c is formed, the above-mentioned thermoplastic resin 21 is supplied onto the central support surface 2a ₁ (and the annular recess 2a ₂ ) (resin supply step S10). ..

Next, the heating element 2b and the heating element 4b are heated so that the support surface 2a and the pressing surface 4a are 40 ° C. or higher and 120 ° C. or lower (more preferably 50 ° C. or higher and 100 ° C. or lower), respectively. Then, the protective member 23 is formed by pressing the thermoplastic resin 21 softened or melted by heating with the pressing body 4 (protective member forming step S20).

FIG. 21A is a diagram showing a protective member forming step S20 according to a third embodiment. In the protective member forming step S20, the surface of the protective member 23 in contact with the central support surface 2a ₁ becomes one surface 23a in close contact with the surface 11a of the wafer 11.

In the protective member forming step S20 according to the third embodiment, an annular core material (not shown) formed of a hard material such as metal may be arranged in the annular recess 2a ₂ . By integrally molding the core material and the protective member 23, the strength of the annular convex portion 23c can be improved.

After the protective member forming step S20, the one side 23a side of the thin film portion 23b is brought into close contact with the surface 11a side by utilizing the atmospheric pressure difference generated in the above-mentioned protective member attaching unit 10, and then the frame unit forming device 100 (FIG. 21 B)) is used to bring the surface 11a side into close contact with the one side 23a side (wafer forming step S30 with protective member).

FIG. 21B is a diagram showing a wafer forming step S30 with a protective member according to a third embodiment. The frame unit forming device 100 has a disk-shaped chuck table 102. The chuck table 102 has a disk-shaped frame 104 made of metal.

The upper surface of the frame body 104 has a diameter larger than the diameter of the protective member 23. The frame body 104 has a concave portion in the central portion of a circle, and a disk-shaped porous plate 106 made of porous ceramics is fixed to the concave portion.

Below the recess of the frame body 104, a flow path 104a corresponding to the above-mentioned flow path 14d is formed. Further, a heating element 104b is provided inside the frame body 104. The upper surface of the frame body 104 and the upper surface of the porous plate 106 are flush with each other, forming a substantially flat holding surface 102a.

A disk-shaped pressing body 108 is arranged above the holding surface 102a. The pressing body 108 has a diameter larger than that of the wafer 11 and smaller than the inner diameter of the annular convex portion 23c, and has a circular pressing surface 108a in contact with the wafer 11.

A heating element 108b is built in the pressing body 108, and a ball screw type vertical moving mechanism (not shown) for moving the pressing body 108 up and down is connected to the upper part of the pressing body 108.

When the protective member 23 is further brought into close contact with the wafer 11, the back surface 11b side of the wafer 11 supported by the chuck table 102 is pressed so that the back surface 11b is exposed upward while the heating elements 104b and 108b are heated. Press with 108.

At this time, the heating element 104b of the chuck table 102 may not be heated (or the heating element 104b may not be provided in the first place). By heating only the heating element 108b arranged on the relatively hard wafer 11 side, it is possible to secure the adhesion between the protective member 23 and the wafer 11 or the like while suppressing excessive deformation of the protective member 23.

By the way, the protective member 23 is brought into close contact with the wafer 11 to form the wafer 25 with the protective member by using only the frame unit forming device 100 without using the protective member attaching unit 10 to bring the protective member 23 into close contact with the wafer 11. May be. Also in this case, the heating element 104b may not be heated or the heating element 104b may not be provided.

After the wafer forming step S30 with the protective member, the machining step S50 (grinding step (see FIG. 18), cutting step (see FIG. 19) and laser beam irradiation step (see FIG. 20)) is performed through the protective member cooling step S40. Will be. After that, the protective member 23 is peeled from the wafer 11 (peeling step S60).

Since the protective member 23 of the present embodiment also does not have a glue layer, even if the protective member 23 is peeled off from the wafer 11, the adhesive residue does not remain on the wafer 11. Further, since the protective member 23 does not have the glue layer, the vibration of the wafer 11 during processing can be reduced as compared with the protective member having the glue layer.

In addition, since the protective member 23 is formed of the thermoplastic resin 21 containing neither sodium nor zinc, even if the protective member 23 is brought into close contact with the wafer 11, there is no risk of contamination by sodium and zinc, and these metals have no risk of contamination. There is no malfunction of the device 15 due to this.

In addition, the structure, method, and the like according to the above-described embodiment can be appropriately modified and implemented as long as they do not deviate from the scope of the object of the present invention. In one example, the thermoplastic resin 21 may contain a filler that is made of an inorganic material or an organic material and has a smaller coefficient of thermal expansion than the thermoplastic resin 21.

As the inorganic material, fused silica, crystalline silica and the like are used. By mixing the filler with the thermoplastic resin 21, the shrinkage of the protective member 23 during cooling can be reduced, so that the wafer 11 in close contact with the protective member 23 can be prevented from bending or deforming.

In addition to fillers such as fillers, the thermoplastic resin 21 contains (1) an antioxidant, (2) a light stabilizer for preventing deterioration (deterioration) due to light, and (3) dyes, pigments, and fluorescent agents. Binder resin for adhering resin to resin, (4) antistatic agent, (5) silane coupling agent for improving compatibility between inorganic and organic materials such as filler, (6) mold release agent, (7) A surfactant for promoting peelability, (8) Dyes and pigments for detecting the presence / absence, thickness, etc. of the protective member 23, and confirming the residue after peeling of the protective member 23. Alternatively, various compounding agents such as a fluorescent agent and (9) an ultraviolet absorber may be added.

Further, various thermoplastic resins different from the thermoplastic resin 21 may be added to the thermoplastic resin 21 in addition to or in place of either the filler or the compounding agent. In this case, the thermoplastic resin 21 becomes a thermoplastic resin composition and forms the protective member 23.

2: Support table, 2a: Support surface 2a ₁ : Central support surface, 2a ₂ : Circular recess, 2a ₃ : Outer peripheral support surface, 2b: Heat generating body 4: Pressing body, 4a: Pressing surface, 4b: Heat generating body 10: Protection Member attachment unit, 10a: lower body, 10b: annular plate, 10c: upper body 10d: first space, 10e: second space 11: wafer, 11a: front surface, 11b: back surface, 11c: modified region 12: chuck table , 12a: Holding surface 13: Scheduled division line 14a: Frame body, 14b: Porous plate, 14c: Circular groove, 14d: Flow path 15: Device 16: Exhaust part, 16a: Exhaust path, 16b: Suction source 17: Bump 18 : Exhaust part, 18a: Exhaust path, 18b: Suction source 19a: Device area, 19b: Outer peripheral excess area 20: Air supply part, 20a: Air supply path, 20b: Electromagnetic valve 21: Thermoplastic resin 22: Pressing body, 22a : Pressing surface, 22b: Heat generating body 23: Protective member, 23a: One surface, 23b: Thin film part, 23c: Circular convex part 24: Cutting mechanism, 24a: Arm part, 24b: Output shaft, 24c: Cutting blade 25: Protective member With wafer, 27: annular frame, 29: protective tape 30: grinding device 31: chip 32: chuck table, 32a: holding surface 33: frame unit 34: grinding mechanism, 36: spindle, 38: wheel mount, 40: grinding wheel 42: Wheel base, 44: Grinding grindstone, 46: Grinding liquid, 48: Nozzle 50: Cutting device, 52: Chuck table, 52a: Holding surface 54: Cutting unit, 56: Spindle, 58: Cutting blade 60: Laser processing Device, 62: Chuck table, 62a: Holding surface 64: Laser beam irradiation unit 66: Heating pressing unit, 68: Heating unit, 70: Pressing body, 72: Resin supply device 74: Support table, 74a: Support surface, 74b: Heat generating body 76: Pressing body, 76a: Pressing surface, 76b: Heat generating body 80: Frame unit forming device, 82: Chuck table, 82a: Holding surface 84: Frame body, 84a: Support surface, 84b: Flow path, 84c: Heat generation Body, 86: Porous plate 88: Grinding device, 90: Clamp, 92: Cutting device, 94: Laser processing device 100: Frame unit forming device, 102: Chuck table, 102a: Holding surface 104: Frame body, 104a: Flow path , 104b: heating element, 106: porous plate 108: pressing body, 108a: pressing surface, 108b: heating element L: laser beam

Claims (6)

A protective member for protecting the wafer is adhered to one surface side of the wafer on which the semiconductor device is formed out of one surface and the other surface of the disk-shaped wafer to manufacture a wafer with a protective member. A method for manufacturing wafers with components.
A resin supply step for supplying a thermoplastic resin which is plate-like, powder-like, lump-like, string-like, granular, film-like or fluid-like and contains neither sodium nor zinc to the support surface of the support table.
A protective member forming step of spreading the thermoplastic resin along the support surface to form the sheet-shaped protective member while heating and softening or melting the thermoplastic resin.
A wafer forming step with a protective member is provided, in which one surface side of the heated sheet-shaped protective member and the one surface side of the wafer are brought into close contact with each other to form a wafer with the protective member. A characteristic method for manufacturing a wafer with a protective member. The method for manufacturing a wafer with a protective member according to claim 1, wherein the thermoplastic resin is a polyolefin. The method for manufacturing a wafer with a protective member according to claim 1 or 2, further comprising a protective member cooling step for cooling the protective member after the wafer forming step with the protective member. It is a wafer processing method for processing a disk-shaped wafer in which a semiconductor device is formed on one surface side.
A resin supply step for supplying a thermoplastic resin which is plate-like, powder-like, lump-like, string-like, granular, film-like or fluid-like and contains neither sodium nor zinc on the support surface of the support table. A protective member forming step of spreading the thermoplastic resin along the support surface to form a sheet-shaped protective member while heating and softening or melting the thermoplastic resin, and a heated sheet-shaped protective member. A wafer having a protective member formed through a wafer forming step with a protective member in which one surface side and the one surface side of the wafer are brought into close contact with each other to form a wafer with a protective member. A processing step of processing the wafer while holding the protective member on the chuck table, and
A method for processing a wafer, comprising: a peeling step for peeling the protective member from the wafer after the processing step. It is a protective member that protects the wafer by being in close contact with the one surface side of the wafer on which the semiconductor device is formed out of one surface and the other surface of the disk-shaped wafer.
A protective member characterized in that one surface side of the protective member to be brought into close contact with the one surface side of the wafer is formed of a thermoplastic resin containing neither sodium nor zinc. The protective member according to claim 5, wherein the thermoplastic resin is a polyolefin.

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