JP2022008849A - Etchant, replenishing solution and method for forming copper wiring - Google Patents
Etchant, replenishing solution and method for forming copper wiring Download PDFInfo
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- JP2022008849A JP2022008849A JP2021163820A JP2021163820A JP2022008849A JP 2022008849 A JP2022008849 A JP 2022008849A JP 2021163820 A JP2021163820 A JP 2021163820A JP 2021163820 A JP2021163820 A JP 2021163820A JP 2022008849 A JP2022008849 A JP 2022008849A
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- Prior art keywords
- compound
- membered ring
- etching solution
- etching
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052802 copper Inorganic materials 0.000 title claims abstract description 51
- 239000010949 copper Substances 0.000 title claims abstract description 51
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 15
- -1 aliphatic heterocyclic compound Chemical class 0.000 claims abstract description 80
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 23
- 150000002390 heteroarenes Chemical class 0.000 claims abstract description 19
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 19
- 230000001590 oxidative effect Effects 0.000 claims abstract description 19
- 125000005842 heteroatom Chemical group 0.000 claims abstract description 18
- 229920006317 cationic polymer Polymers 0.000 claims abstract description 15
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000002253 acid Substances 0.000 claims abstract description 14
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims description 105
- 239000000243 solution Substances 0.000 claims description 71
- 125000003277 amino group Chemical group 0.000 claims description 21
- 125000001424 substituent group Chemical group 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 17
- NQRYJNQNLNOLGT-UHFFFAOYSA-N tetrahydropyridine hydrochloride Natural products C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 claims description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 14
- RWRDLPDLKQPQOW-UHFFFAOYSA-N tetrahydropyrrole Natural products C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 claims description 14
- 150000002391 heterocyclic compounds Chemical class 0.000 claims description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 10
- 150000002334 glycols Chemical class 0.000 claims description 7
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 7
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 4
- LKLLNYWECKEQIB-UHFFFAOYSA-N 1,3,5-triazinane Chemical compound C1NCNCN1 LKLLNYWECKEQIB-UHFFFAOYSA-N 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 3
- AICOOMRHRUFYCM-ZRRPKQBOSA-N oxazine, 1 Chemical compound C([C@@H]1[C@H](C(C[C@]2(C)[C@@H]([C@H](C)N(C)C)[C@H](O)C[C@]21C)=O)CC1=CC2)C[C@H]1[C@@]1(C)[C@H]2N=C(C(C)C)OC1 AICOOMRHRUFYCM-ZRRPKQBOSA-N 0.000 claims 1
- 239000004215 Carbon black (E152) Substances 0.000 description 11
- GLUUGHFHXGJENI-UHFFFAOYSA-N diethylenediamine Natural products C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 11
- 229930195733 hydrocarbon Natural products 0.000 description 11
- 150000002430 hydrocarbons Chemical class 0.000 description 11
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 230000001939 inductive effect Effects 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 125000004432 carbon atom Chemical group C* 0.000 description 7
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 7
- 239000007921 spray Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Chemical compound C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 description 6
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 150000003839 salts Chemical class 0.000 description 6
- 229920001577 copolymer Polymers 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- FQUYSHZXSKYCSY-UHFFFAOYSA-N 1,4-diazepane Chemical group C1CNCCNC1 FQUYSHZXSKYCSY-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 4
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 4
- 150000007524 organic acids Chemical class 0.000 description 4
- 239000013589 supplement Substances 0.000 description 4
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 3
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 3
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000002184 metal Chemical class 0.000 description 3
- 229910052751 metal Chemical class 0.000 description 3
- 125000004193 piperazinyl group Chemical group 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- LBUJPTNKIBCYBY-UHFFFAOYSA-N 1,2,3,4-tetrahydroquinoline Chemical compound C1=CC=C2CCCNC2=C1 LBUJPTNKIBCYBY-UHFFFAOYSA-N 0.000 description 2
- RXYPXQSKLGGKOL-UHFFFAOYSA-N 1,4-dimethylpiperazine Chemical compound CN1CCN(C)CC1 RXYPXQSKLGGKOL-UHFFFAOYSA-N 0.000 description 2
- QDRMUFJWOJOOKR-UHFFFAOYSA-N 1-(1-hydroxypropan-2-yloxy)butan-2-ol Chemical compound CCC(O)COC(C)CO QDRMUFJWOJOOKR-UHFFFAOYSA-N 0.000 description 2
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- PAMIQIKDUOTOBW-UHFFFAOYSA-N 1-methylpiperidine Chemical compound CN1CCCCC1 PAMIQIKDUOTOBW-UHFFFAOYSA-N 0.000 description 2
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 2
- RKMGAJGJIURJSJ-UHFFFAOYSA-N 2,2,6,6-tetramethylpiperidine Chemical compound CC1(C)CCCC(C)(C)N1 RKMGAJGJIURJSJ-UHFFFAOYSA-N 0.000 description 2
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 2
- XUSNPFGLKGCWGN-UHFFFAOYSA-N 3-[4-(3-aminopropyl)piperazin-1-yl]propan-1-amine Chemical compound NCCCN1CCN(CCCN)CC1 XUSNPFGLKGCWGN-UHFFFAOYSA-N 0.000 description 2
- UZOFELREXGAFOI-UHFFFAOYSA-N 4-methylpiperidine Chemical compound CC1CCNCC1 UZOFELREXGAFOI-UHFFFAOYSA-N 0.000 description 2
- MTAYYBKXNAEQOK-UHFFFAOYSA-N 5-(2h-tetrazol-5-yl)-2h-tetrazole Chemical class N1N=NC(C2=NNN=N2)=N1 MTAYYBKXNAEQOK-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- VVJKKWFAADXIJK-UHFFFAOYSA-N Allylamine Chemical compound NCC=C VVJKKWFAADXIJK-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- NJSSICCENMLTKO-HRCBOCMUSA-N [(1r,2s,4r,5r)-3-hydroxy-4-(4-methylphenyl)sulfonyloxy-6,8-dioxabicyclo[3.2.1]octan-2-yl] 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)O[C@H]1C(O)[C@@H](OS(=O)(=O)C=2C=CC(C)=CC=2)[C@@H]2OC[C@H]1O2 NJSSICCENMLTKO-HRCBOCMUSA-N 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 150000003851 azoles Chemical class 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- OWBTYPJTUOEWEK-UHFFFAOYSA-N butane-2,3-diol Chemical compound CC(O)C(C)O OWBTYPJTUOEWEK-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- XBRDBODLCHKXHI-UHFFFAOYSA-N epolamine Chemical compound OCCN1CCCC1 XBRDBODLCHKXHI-UHFFFAOYSA-N 0.000 description 2
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- 239000000411 inducer Substances 0.000 description 2
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- DYUWTXWIYMHBQS-UHFFFAOYSA-N n-prop-2-enylprop-2-en-1-amine Chemical compound C=CCNCC=C DYUWTXWIYMHBQS-UHFFFAOYSA-N 0.000 description 2
- 235000005985 organic acids Nutrition 0.000 description 2
- 229920000083 poly(allylamine) Polymers 0.000 description 2
- 229920001281 polyalkylene Polymers 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 125000000719 pyrrolidinyl group Chemical group 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N sulfur dioxide Inorganic materials O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- UNRBEYYLYRXYCG-UHFFFAOYSA-N (1-ethylpyrrolidin-2-yl)methanamine Chemical compound CCN1CCCC1CN UNRBEYYLYRXYCG-UHFFFAOYSA-N 0.000 description 1
- KSCPLKVBWDOSAI-NKWVEPMBSA-N (4as,7as)-2,3,4,4a,5,6,7,7a-octahydro-1h-pyrrolo[3,4-b]pyridine Chemical compound N1CCC[C@H]2CNC[C@H]21 KSCPLKVBWDOSAI-NKWVEPMBSA-N 0.000 description 1
- NENLYAQPNATJSU-UHFFFAOYSA-N 1,2,3,4,4a,5,6,7,8,8a-decahydroisoquinoline Chemical compound C1NCCC2CCCCC21 NENLYAQPNATJSU-UHFFFAOYSA-N 0.000 description 1
- FIDRAVVQGKNYQK-UHFFFAOYSA-N 1,2,3,4-tetrahydrotriazine Chemical group C1NNNC=C1 FIDRAVVQGKNYQK-UHFFFAOYSA-N 0.000 description 1
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 description 1
- FBXRCTMIDHCRDT-UHFFFAOYSA-N 1,3,5-tri(propan-2-yl)-1,3,5-triazinane Chemical compound CC(C)N1CN(C(C)C)CN(C(C)C)C1 FBXRCTMIDHCRDT-UHFFFAOYSA-N 0.000 description 1
- VWVZIRPJPFJGFE-UHFFFAOYSA-N 1,3,5-tribenzyl-1,3,5-triazinane Chemical compound C=1C=CC=CC=1CN(CN(CC=1C=CC=CC=1)C1)CN1CC1=CC=CC=C1 VWVZIRPJPFJGFE-UHFFFAOYSA-N 0.000 description 1
- XYRTVIAPRQLSOW-UHFFFAOYSA-N 1,3,5-triethyl-1,3,5-triazinane Chemical compound CCN1CN(CC)CN(CC)C1 XYRTVIAPRQLSOW-UHFFFAOYSA-N 0.000 description 1
- DPMZXMBOYHBELT-UHFFFAOYSA-N 1,3,5-trimethyl-1,3,5-triazinane Chemical compound CN1CN(C)CN(C)C1 DPMZXMBOYHBELT-UHFFFAOYSA-N 0.000 description 1
- XTFIVUDBNACUBN-UHFFFAOYSA-N 1,3,5-trinitro-1,3,5-triazinane Chemical compound [O-][N+](=O)N1CN([N+]([O-])=O)CN([N+]([O-])=O)C1 XTFIVUDBNACUBN-UHFFFAOYSA-N 0.000 description 1
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- DPHBVWJGMBYPMK-UHFFFAOYSA-N 1,3,5-tripropyl-1,3,5-triazinane Chemical compound CCCN1CN(CCC)CN(CCC)C1 DPHBVWJGMBYPMK-UHFFFAOYSA-N 0.000 description 1
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 1
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- SOTUMZCQANFRAM-UHFFFAOYSA-N 1-benzyl-n,n-dimethylpyrrolidin-3-amine Chemical compound C1C(N(C)C)CCN1CC1=CC=CC=C1 SOTUMZCQANFRAM-UHFFFAOYSA-N 0.000 description 1
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- HBVNLKQGRZPGRP-UHFFFAOYSA-N 1-benzylpyrrolidin-3-amine Chemical compound C1C(N)CCN1CC1=CC=CC=C1 HBVNLKQGRZPGRP-UHFFFAOYSA-N 0.000 description 1
- CWEGCQIIDCZZED-UHFFFAOYSA-N 1-benzylpyrrolidine Chemical compound C=1C=CC=CC=1CN1CCCC1 CWEGCQIIDCZZED-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- JSHASCFKOSDFHY-UHFFFAOYSA-N 1-butylpyrrolidine Chemical compound CCCCN1CCCC1 JSHASCFKOSDFHY-UHFFFAOYSA-N 0.000 description 1
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- XHOADYKJSBCVBJ-UHFFFAOYSA-N n,n-diethylpyrrolidin-3-amine Chemical compound CCN(CC)C1CCNC1 XHOADYKJSBCVBJ-UHFFFAOYSA-N 0.000 description 1
- XFLSMWXCZBIXLV-UHFFFAOYSA-N n,n-dimethyl-2-(4-methylpiperazin-1-yl)ethanamine Chemical compound CN(C)CCN1CCN(C)CC1 XFLSMWXCZBIXLV-UHFFFAOYSA-N 0.000 description 1
- AVAWMINJNRAQFS-UHFFFAOYSA-N n,n-dimethylpyrrolidin-3-amine Chemical compound CN(C)C1CCNC1 AVAWMINJNRAQFS-UHFFFAOYSA-N 0.000 description 1
- NHMWGGURJSUYGU-UHFFFAOYSA-N n-ethyl-n-pyrrolidin-3-ylacetamide Chemical compound CCN(C(C)=O)C1CCNC1 NHMWGGURJSUYGU-UHFFFAOYSA-N 0.000 description 1
- OPCPWFHLFKAUEA-UHFFFAOYSA-N n-ethylpyrrolidin-3-amine Chemical compound CCNC1CCNC1 OPCPWFHLFKAUEA-UHFFFAOYSA-N 0.000 description 1
- KOEKUQRWTOSZOR-UHFFFAOYSA-N n-methyl-n-pyrrolidin-3-ylacetamide Chemical compound CC(=O)N(C)C1CCNC1 KOEKUQRWTOSZOR-UHFFFAOYSA-N 0.000 description 1
- NGZYRKGJWYJGRS-UHFFFAOYSA-N n-methylpyrrolidin-3-amine Chemical compound CNC1CCNC1 NGZYRKGJWYJGRS-UHFFFAOYSA-N 0.000 description 1
- HDCCJUCOIKLZNM-UHFFFAOYSA-N n-pyrrolidin-3-ylacetamide Chemical compound CC(=O)NC1CCNC1 HDCCJUCOIKLZNM-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 125000000018 nitroso group Chemical group N(=O)* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- YZTJYBJCZXZGCT-UHFFFAOYSA-N phenylpiperazine Chemical compound C1CNCCN1C1=CC=CC=C1 YZTJYBJCZXZGCT-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- IYPZRUYMFDWKSS-UHFFFAOYSA-N piperazin-1-amine Chemical compound NN1CCNCC1 IYPZRUYMFDWKSS-UHFFFAOYSA-N 0.000 description 1
- IWELDVXSEVIIGI-UHFFFAOYSA-N piperazin-2-one Chemical compound O=C1CNCCN1 IWELDVXSEVIIGI-UHFFFAOYSA-N 0.000 description 1
- JSSXHAMIXJGYCS-UHFFFAOYSA-N piperazin-4-ium-2-carboxylate Chemical compound OC(=O)C1CNCCN1 JSSXHAMIXJGYCS-UHFFFAOYSA-N 0.000 description 1
- CBLGQEBXWDKYDI-UHFFFAOYSA-N piperazine-1,4-dicarbaldehyde Chemical compound O=CN1CCN(C=O)CC1 CBLGQEBXWDKYDI-UHFFFAOYSA-N 0.000 description 1
- LWMPFIOTEAXAGV-UHFFFAOYSA-N piperidin-1-amine Chemical compound NN1CCCCC1 LWMPFIOTEAXAGV-UHFFFAOYSA-N 0.000 description 1
- RHPBLLCTOLJFPH-UHFFFAOYSA-N piperidin-2-ylmethanamine Chemical compound NCC1CCCCN1 RHPBLLCTOLJFPH-UHFFFAOYSA-N 0.000 description 1
- PRAYXGYYVXRDDW-UHFFFAOYSA-N piperidin-2-ylmethanol Chemical compound OCC1CCCCN1 PRAYXGYYVXRDDW-UHFFFAOYSA-N 0.000 description 1
- PEUGKEHLRUVPAN-UHFFFAOYSA-N piperidin-3-amine Chemical compound NC1CCCNC1 PEUGKEHLRUVPAN-UHFFFAOYSA-N 0.000 description 1
- VUNPWIPIOOMCPT-UHFFFAOYSA-N piperidin-3-ylmethanol Chemical compound OCC1CCCNC1 VUNPWIPIOOMCPT-UHFFFAOYSA-N 0.000 description 1
- BCIIMDOZSUCSEN-UHFFFAOYSA-N piperidin-4-amine Chemical compound NC1CCNCC1 BCIIMDOZSUCSEN-UHFFFAOYSA-N 0.000 description 1
- LTEKQAPRXFBRNN-UHFFFAOYSA-N piperidin-4-ylmethanamine Chemical compound NCC1CCNCC1 LTEKQAPRXFBRNN-UHFFFAOYSA-N 0.000 description 1
- XBXHCBLBYQEYTI-UHFFFAOYSA-N piperidin-4-ylmethanol Chemical compound OCC1CCNCC1 XBXHCBLBYQEYTI-UHFFFAOYSA-N 0.000 description 1
- XIMBESZRBTVIOD-UHFFFAOYSA-N piperidine-2-carboxamide Chemical compound NC(=O)C1CCCCN1 XIMBESZRBTVIOD-UHFFFAOYSA-N 0.000 description 1
- 125000003386 piperidinyl group Chemical group 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000003217 pyrazoles Chemical class 0.000 description 1
- 125000003226 pyrazolyl group Chemical group 0.000 description 1
- NGXSWUFDCSEIOO-UHFFFAOYSA-N pyrrolidin-3-amine Chemical compound NC1CCNC1 NGXSWUFDCSEIOO-UHFFFAOYSA-N 0.000 description 1
- VLJNHYLEOZPXFW-UHFFFAOYSA-N pyrrolidine-2-carboxamide Chemical compound NC(=O)C1CCCN1 VLJNHYLEOZPXFW-UHFFFAOYSA-N 0.000 description 1
- IQHXABCGSFAKPN-UHFFFAOYSA-N pyrrolidine-3-carboxamide Chemical compound NC(=O)C1CCNC1 IQHXABCGSFAKPN-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- RPACBEVZENYWOL-XFULWGLBSA-M sodium;(2r)-2-[6-(4-chlorophenoxy)hexyl]oxirane-2-carboxylate Chemical compound [Na+].C=1C=C(Cl)C=CC=1OCCCCCC[C@]1(C(=O)[O-])CO1 RPACBEVZENYWOL-XFULWGLBSA-M 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- CMIBWIAICVBURI-UHFFFAOYSA-N tert-butyl 3-aminopyrrolidine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CCC(N)C1 CMIBWIAICVBURI-UHFFFAOYSA-N 0.000 description 1
- DQQJBEAXSOOCPG-UHFFFAOYSA-N tert-butyl n-pyrrolidin-3-ylcarbamate Chemical compound CC(C)(C)OC(=O)NC1CCNC1 DQQJBEAXSOOCPG-UHFFFAOYSA-N 0.000 description 1
- 150000003536 tetrazoles Chemical group 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 150000003852 triazoles Chemical group 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/067—Etchants
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/068—Apparatus for etching printed circuits
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
Description
本発明は、銅のエッチング液とその補給液、および銅配線の形成方法に関する。 The present invention relates to a copper etching solution, a replenishing solution thereof, and a method for forming copper wiring.
プリント配線板の製造において、フォトエッチング法で銅配線パターンを形成する場合、エッチング液として塩化鉄系エッチング液、塩化銅系エッチング液、アルカリ性エッチング液などが用いられている。これらのエッチング液を使用すると、サイドエッチングとよばれるエッチングレジスト下の銅が配線パターンの側面から溶解する場合があった。即ち、エッチングレジストでカバーされることによって、本来エッチングで除去されないことが望まれる部分(すなわち、銅配線部分)が、エッチング液により除去されて、当該銅配線の底部から頂部になるに従い幅が細くなる現象が生じていた。特に銅配線パターンが微細な場合、このようなサイドエッチングはできる限り少なくしなければならない。このサイドエッチングを抑制するために、5員環を有する複素芳香族化合物であるアゾール化合物が配合されたエッチング液が提案されている(特許文献1~4)。また、サイドエッチングを抑制するために、5~7員環を有する脂肪族複素環式化合物が配合されたエッチング液も提案されている(特許文献5)。 In the production of a printed wiring board, when a copper wiring pattern is formed by a photoetching method, an iron chloride-based etching solution, a copper chloride-based etching solution, an alkaline etching solution, or the like is used as the etching solution. When these etching solutions were used, copper under an etching resist called side etching may be melted from the side surface of the wiring pattern. That is, the portion that is originally desired not to be removed by etching (that is, the copper wiring portion) is removed by the etching solution by being covered with the etching resist, and the width becomes narrower from the bottom to the top of the copper wiring. The phenomenon of Especially when the copper wiring pattern is fine, such side etching should be reduced as much as possible. In order to suppress this side etching, etching solutions containing an azole compound, which is a heteroaromatic compound having a 5-membered ring, have been proposed (Patent Documents 1 to 4). Further, in order to suppress side etching, an etching solution containing an aliphatic heterocyclic compound having a 5- to 7-membered ring has also been proposed (Patent Document 5).
一方、市場では、サイドエッチングの抑制効果を持ちつつ、銅配線のファインパターンの形成に優れたエッチング液が求められている。上記のような特許文献で開示されたエッチング液では、一定のサイドエッチングの抑制効果が期待されるが、これらの中でも高性能と判断される特許文献4で開示されたエッチング液では、ライン/スペース=13μm/7μmの20μmのピッチパターン領域(ファイン部)と、ライン/スペース=22μm/18μmの40μmのピッチパターン領域(ラフ部)とが混在したピッチパターンでのファインパターンの形成が達成できていることが具体的に開示されているが、これよりも微細な(狭い)ピッチパターン領域でのファインパターンの形成は達成できていなかった。 On the other hand, in the market, there is a demand for an etching solution that has an effect of suppressing side etching and is excellent in forming a fine pattern of copper wiring. The etching solution disclosed in Patent Document as described above is expected to have a certain effect of suppressing side etching, but among these, the etching solution disclosed in Patent Document 4, which is judged to have high performance, has a line / space. A fine pattern can be formed with a pitch pattern in which a 20 μm pitch pattern region (fine portion) of 13 μm / 7 μm and a 40 μm pitch pattern region (rough portion) of line / space = 22 μm / 18 μm are mixed. Although it is specifically disclosed, the formation of a fine pattern in a finer (narrower) pitch pattern region could not be achieved.
本発明は、前記実情に鑑みてなされたものであり、ファイン部とラフ部が混在した微細なピッチパターン領域に対するファインパターンの形成に優れるエッチング液とその補給液、および銅配線の形成方法を提供することを目的とする。 The present invention has been made in view of the above circumstances, and provides an etching solution excellent in forming a fine pattern for a fine pitch pattern region in which a fine portion and a rough portion are mixed, a replenishing solution thereof, and a method for forming copper wiring. The purpose is to do.
本発明は、銅のエッチング液であって、前記エッチング液は、酸と、酸化性金属イオンと、5員環を有する複素芳香族化合物(A)と、5~7員環を有する脂肪族複素環式化合物(B)と、分子内に第三級または第四級窒素を含むカチオン性ポリマーを含み、前記5員環を有する複素芳香族化合物(A)は、環を構成するヘテロ原子として窒素原子を1つ以上有する複素芳香族化合物であり、前記5~7員環を有する脂肪族複素環式化合物(B)は、環を構成するヘテロ原子として窒素原子を1つ以上有する脂肪族複素環式化合物であるエッチング液に関する。 The present invention is an etching solution for copper, wherein the etching solution contains an acid, an oxidizing metal ion, a heteroarocyclic compound (A) having a 5-membered ring, and an aliphatic complex having a 5- to 7-membered ring. The heterocyclic compound (A) containing the cyclic compound (B) and a cationic polymer containing tertiary or quaternary nitrogen in the molecule and having the 5-membered ring has nitrogen as a heteroatom constituting the ring. The heterocyclic compound (B), which is a heteroarocyclic compound having one or more atoms and has a 5- to 7-membered ring, is an aliphatic heterocycle having one or more nitrogen atoms as heteroatoms constituting the ring. The present invention relates to an etching solution which is a formula compound.
本発明は、前記エッチング液を連続または繰り返し使用する際に、前記エッチング液に添加する補給液であって、前記補給液は、5員環を有する複素芳香族化合物(A)と、5~7員環を有する脂肪族複素環式化合物(B)と、分子内に第三級または第四級窒素を含むカチオン性ポリマーを含む水溶液であり、前記5員環を有する複素芳香族化合物(A)は、環を構成するヘテロ原子として窒素原子を1つ以上有する複素芳香族化合物であり、前記5~7員環を有する脂肪族複素環式化合物(B)は、環を構成するヘテロ原子として窒素原子を1つ以上有する脂肪族複素環式化合物である補給液に関する。 The present invention is a replenishing solution to be added to the etching solution when the etching solution is used continuously or repeatedly, and the replenishing solution is a heterocyclic compound (A) having a 5-membered ring and 5 to 7 thereof. An aqueous solution containing an aliphatic heterocyclic compound (B) having a member ring and a cationic polymer containing tertiary or quaternary nitrogen in the molecule, and the heterocyclic compound (A) having the 5-membered ring. Is a heteroarocyclic compound having at least one nitrogen atom as a heteroatom constituting the ring, and the aliphatic heterocyclic compound (B) having the 5- to 7-membered ring is nitrogen as a heteroatom constituting the ring. It relates to a supplement which is an aliphatic heterocyclic compound having one or more atoms.
本発明は、銅層のエッチングレジストで被覆されていない部分をエッチングする銅配線の形成方法であって、前記エッチング液を用いてエッチングする銅配線の形成方法に関する。 The present invention relates to a method for forming a copper wiring that etches a portion of a copper layer that is not covered with an etching resist, and relates to a method for forming a copper wiring that is etched using the etching solution.
本発明のエッチング液は、酸と、酸化性金属イオンと、5員環を有する複素芳香族化合物(A)と、5~7員環を有する脂肪族複素環式化合物(B)と、分子内に第三級または第四級窒素を含むカチオン性ポリマーを含み、前記5員環を有する複素芳香族化合物(A)は、環を構成するヘテロ原子として窒素原子を1つ以上有する複素芳香族化合物であり、前記5~7員環を有する脂肪族複素環式化合物(B)は、環を構成するヘテロ原子として窒素原子を1つ以上有する脂肪族複素環式化合物である。本発明のエッチング液は、ファイン部とラフ部が混在した微細なピッチパターン領域に対して、均一な被膜形成を行うことで、サイドエッチングの抑制に加え、直線性に優れたファインパターンを形成できる。よって、本発明のエッチング液は、レジストを設けた銅表面の銅配線パターンを形成する用途として有用である。 The etching solution of the present invention contains an acid, an oxidizing metal ion, a heterocyclic compound (A) having a 5-membered ring, and an aliphatic heterocyclic compound (B) having a 5- to 7-membered ring, in the molecule. The heterocyclic compound (A) containing a cationic polymer containing tertiary or quaternary nitrogen and having the 5-membered ring is a heteroaromatic compound having one or more nitrogen atoms as heteroatoms constituting the ring. The aliphatic heterocyclic compound (B) having a 5- to 7-membered ring is an aliphatic heterocyclic compound having one or more nitrogen atoms as heteroatoms constituting the ring. The etching solution of the present invention can form a fine pattern having excellent linearity in addition to suppressing side etching by forming a uniform film on a fine pitch pattern region in which a fine portion and a rough portion are mixed. .. Therefore, the etching solution of the present invention is useful for forming a copper wiring pattern on a copper surface provided with a resist.
また、本発明のエッチング液は、ファイン部とラフ部が混在した微細なピッチパターン領域に対して、ファインパターンの形成が優れることに加え、ラフパターンの形成も良好となるが、本発明のエッチング液が、グリコールエーテル類および/またはグリコール類を含む場合、ラフパターンの形成にとくに優れる。通常、ファイン部とラフ部では、エッチング液の流速が異なるため、皮膜形成と深さ方向のエッチングに差異が生じ易い傾向にある。例えば、流速の速いラフ部では、皮膜がボトムまで形成されにくくなるので、ラフパターンのボトム部でのくびれ(逆台形形状)が発生しやすい。このようなボトム部のくびれが生じた場合、基板上部からボトム幅が観察できないため製品管理し難いことや、実装時などにトップ部に圧力がかかった際、トップ部の角がかけるなどして、実装の不具合や異物発生となるリスクがある。本発明のエッチング液は、ファイン部とラフ部のエッチング性に差がない(ファインパターンとラフパターンの形状が略同一の形状となる)ことから、上記の問題を回避でき得るため、有用である。 Further, the etching solution of the present invention is excellent in forming a fine pattern for a fine pitch pattern region in which a fine portion and a rough portion are mixed, and also in forming a rough pattern. When the liquid contains glycol ethers and / or glycols, it is particularly excellent in forming a rough pattern. Usually, since the flow velocity of the etching solution is different between the fine portion and the rough portion, there is a tendency that a difference is likely to occur between the film formation and the etching in the depth direction. For example, in a rough portion having a high flow velocity, it is difficult for the film to be formed up to the bottom, so that a constriction (inverted trapezoidal shape) is likely to occur at the bottom portion of the rough pattern. When such a constriction occurs in the bottom part, it is difficult to manage the product because the bottom width cannot be observed from the top of the board, and when pressure is applied to the top part during mounting, the corners of the top part may be applied. , There is a risk of mounting defects and foreign matter. The etching solution of the present invention is useful because there is no difference in the etching properties of the fine portion and the rough portion (the shapes of the fine pattern and the rough pattern are substantially the same), and thus the above problem can be avoided. ..
<銅のエッチング液>
本発明の銅のエッチング液は、酸と、酸化性金属イオンと、5員環を有する複素芳香族化合物(A)と、5~7員環を有する脂肪族複素環式化合物(B)と、分子内に第三級または第四級窒素を含むカチオン性ポリマーを含み、前記5員環を有する複素芳香族化合物(A)は、環を構成するヘテロ原子として窒素原子を1つ以上有する複素芳香族化合物であり、前記5~7員環を有する脂肪族複素環式化合物(B)は、環を構成するヘテロ原子として窒素原子を1つ以上有する脂肪族複素環式化合物である。なお、本発明の銅のエッチング液における「銅」は、銅からなるものであってもよく、銅合金からなるものであってもよい。
<Copper etching solution>
The copper etching solution of the present invention comprises an acid, an oxidizing metal ion, a heterocyclic compound (A) having a 5-membered ring, and an aliphatic heterocyclic compound (B) having a 5- to 7-membered ring. The heterocyclic compound (A) containing a cationic polymer containing tertiary or quaternary nitrogen in the molecule and having the 5-membered ring has one or more nitrogen atoms as heteroatoms constituting the ring. The group compound, the aliphatic heterocyclic compound (B) having a 5- to 7-membered ring is an aliphatic heterocyclic compound having one or more nitrogen atoms as heteroatoms constituting the ring. The "copper" in the copper etching solution of the present invention may be made of copper or may be made of a copper alloy.
<酸>
本発明の酸は、無機酸および有機酸から適宜選択可能である。前記無機酸としては、例えば、硫酸、塩酸、硝酸、リン酸、臭化水素酸などが挙げられる。前記有機酸としては、例えば、ギ酸、酢酸、シュウ酸、マレイン酸、安息香酸、グリコール酸などが挙げられる。前記酸の中では、エッチング速度の安定性および銅の溶解安定性の観点から、塩酸が好ましい。前記酸は、少なくとも1種を用いればよく、2種以上を組み合わせて用いることができる。
<Acid>
The acid of the present invention can be appropriately selected from an inorganic acid and an organic acid. Examples of the inorganic acid include sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid, hydrobromic acid and the like. Examples of the organic acid include formic acid, acetic acid, oxalic acid, maleic acid, benzoic acid, glycolic acid and the like. Among the acids, hydrochloric acid is preferable from the viewpoint of etching rate stability and copper dissolution stability. At least one type of acid may be used, and two or more types may be used in combination.
前記酸の濃度は、7~180g/Lであることが好ましく、18~110g/Lであることがより好ましい。酸の濃度が7g/L以上の場合は、エッチング速度が速くなるため、銅を速やかにエッチングすることができる。また、酸の濃度が180g/L以下の場合は、銅の溶解安定性が維持されるとともに、作業環境の悪化を抑制できる。 The concentration of the acid is preferably 7 to 180 g / L, more preferably 18 to 110 g / L. When the acid concentration is 7 g / L or more, the etching rate is high, so that copper can be quickly etched. Further, when the acid concentration is 180 g / L or less, the dissolution stability of copper can be maintained and the deterioration of the working environment can be suppressed.
<酸化性金属イオン>
本発明の酸化性金属イオンは、金属銅を酸化できる金属イオンであればよく、例えば、第二銅イオン、第二鉄イオンなどが挙げられる。サイドエッチングを抑制する観点、およびエッチング速度の安定性の観点から、酸化性金属イオンとして第二銅イオンを用いることが好ましい。前記酸化性金属イオンは、少なくとも1種を用いればよく、2種以上を組み合わせて用いることができる。
<Oxidizing metal ion>
The oxidizing metal ion of the present invention may be any metal ion capable of oxidizing metallic copper, and examples thereof include ferric copper ion and ferric iron ion. From the viewpoint of suppressing side etching and the stability of the etching rate, it is preferable to use cupric ion as the oxidizing metal ion. At least one type of oxidizing metal ion may be used, and two or more types may be used in combination.
前記酸化性金属イオンは、酸化性金属イオン源を配合することによって、エッチング液中に含有させることができる。例えば、酸化性金属イオン源として第二銅イオン源を用いる場合、その具体例としては、塩化銅、硫酸銅、臭化銅、有機酸の銅塩、水酸化銅などが挙げられる。例えば、酸化性金属イオン源として第二鉄イオン源を用いる場合、その具体例としては、塩化鉄、臭化鉄、ヨウ化鉄、硫酸鉄、硝酸鉄、有機酸の鉄塩などが挙げられる。 The oxidizing metal ion can be contained in the etching solution by blending an oxidizing metal ion source. For example, when a cupric second copper ion source is used as the oxidizing metal ion source, specific examples thereof include copper chloride, copper sulfate, copper bromide, copper salts of organic acids, and copper hydroxide. For example, when a ferric ion source is used as the oxidizing metal ion source, specific examples thereof include iron chloride, iron bromide, iron iodide, iron sulfate, iron nitrate, and iron salts of organic acids.
前記酸化性金属イオンの濃度は、10~300g/Lであることが好ましく、10~250g/Lであることがより好ましく、15~220g/Lであることがさらに好ましく、20~200g/Lであることがよりさらに好ましい。酸化性金属イオンの濃度が10g/L以上の場合は、エッチング速度が速くなるため、銅を速やかにエッチングすることができる。また、酸化性金属イオンの濃度が300g/L以下の場合は、銅の溶解安定性が維持される。 The concentration of the oxidizing metal ion is preferably 10 to 300 g / L, more preferably 10 to 250 g / L, further preferably 15 to 220 g / L, and 20 to 200 g / L. It is even more preferable to have. When the concentration of the oxidizing metal ion is 10 g / L or more, the etching rate becomes high, so that copper can be quickly etched. Further, when the concentration of the oxidizing metal ion is 300 g / L or less, the dissolution stability of copper is maintained.
<5員環を有する複素芳香族化合物(A)>
本発明の5員環を有する複素芳香族化合物(A)は、環を構成するヘテロ原子として窒素原子を1つ以上有する複素芳香族化合物である。前記5員環を有する複素芳香族化合物(A)は、少なくとも1種を用いればよく、2種以上を組み合わせて用いることができる。
<Heteroaromatic compound (A) having a 5-membered ring>
The heteroaromatic compound (A) having a 5-membered ring of the present invention is a heteroaromatic compound having one or more nitrogen atoms as heteroatoms constituting the ring. As the heteroaromatic compound (A) having a 5-membered ring, at least one kind may be used, and two or more kinds may be used in combination.
前記5員環を有する複素芳香族化合物(A)は、構造安定性および酸性液に対する溶解性の観点から、環を構成するヘテロ原子として窒素のみを有するものが好ましい。このような5員環を有する複素芳香族化合物(A)としては、例えば、イミダゾール骨格を有するイミダゾール化合物、ピラゾール骨格を有するピラゾール化合物、トリアゾール骨格を有するトリアゾール化合物、テトラゾール骨格を有するテトラゾール化合物などのアゾール化合物が挙げられる。 The heteroaromatic compound (A) having a 5-membered ring preferably has only nitrogen as a heteroatom constituting the ring from the viewpoint of structural stability and solubility in an acidic solution. Examples of the heteroaromatic compound (A) having such a 5-membered ring include azole compounds having an imidazole skeleton, pyrazole compounds having a pyrazole skeleton, triazole compounds having a triazole skeleton, and tetrazole compounds having a tetrazole skeleton. Examples include compounds.
前記イミダゾール化合物としては、例えば、イミダゾール、2-メチルイミダゾール、2-ウンデシル-4-メチルイミダゾール、2-フェニルイミダゾールなどのイミダゾール類、ベンゾイミダゾール、2-メチルベンゾイミダゾール、2-ウンデシルベンゾイミダゾール、2-フェニルベンゾイミダゾール、2-メルカプトベンゾイミダゾールなどのベンゾイミダゾール類などが挙げられる。これらの中でも、ベンゾイミダゾールが好ましい。 Examples of the imidazole compound include imidazoles such as imidazole, 2-methylimidazole, 2-undecyl-4-methylimidazole, and 2-phenylimidazole, benzoimidazole, 2-methylbenzoimidazole, 2-undecylbenzoimidazole, and 2 -Benzoimidazoles such as phenylbenzoimidazole and 2-mercaptobenzoimidazole can be mentioned. Of these, benzimidazole is preferred.
前記ピラゾール化合物としては、例えば、ピラゾール、3-メチルピラゾール、1-エチルピラゾール、3-アミノピラゾール、3,5-ジメチルピラゾール、3-アミノ-1-メチルピラゾール、4-クロロピラゾール1,3,5-トリメチルピラゾールなどが挙げられる。 Examples of the pyrazole compound include pyrazole, 3-methylpyrazole, 1-ethylpyrazole, 3-aminopyrazole, 3,5-dimethylpyrazole, 3-amino-1-methylpyrazole, and 4-chloropyrazole 1,3,5. -Examples include trimethylpyrazole.
前記トリアゾール化合物としては、例えば、1,2,3-トリアゾール、1,2,4-トリアゾール、5-フェニル-1,2,4-トリアゾール、5-アミノ-1,2,4-トリアゾール、ベンゾトリアゾール、1-メチル-ベンゾトリアゾール、トリルトリアゾールなどが挙げられる。これらの中でも、ベンゾトリアゾールが好ましい。 Examples of the triazole compound include 1,2,3-triazole, 1,2,4-triazole, 5-phenyl-1,2,4-triazole, 5-amino-1,2,4-triazole and benzotriazole. , 1-Methyl-benzotriazole, triltriazole and the like. Among these, benzotriazole is preferable.
前記テトラゾール化合物としては、例えば、1H-テトラゾール、5-アミノ-1H-テトラゾール、5-メチル-1H-テトラゾール、5-フェニル-1H-テトラゾール、5-メルカプト-1H-テトラゾール、1-フェニル-5-メルカプト-1H-テトラゾール、1-シクロヘキシル-5-メルカプト-1H-テトラゾール、5,5’-ビ-1H-テトラゾール、およびこれらのアンモニウム塩またはNa塩、Zn塩、Ca塩、K塩などの金属塩などが挙げられる。 Examples of the tetrazole compound include 1H-tetrazole, 5-amino-1H-tetrazole, 5-methyl-1H-tetrazole, 5-phenyl-1H-tetrazole, 5-mercapto-1H-tetrazole, and 1-phenyl-5. Mercapto-1H-tetrazole, 1-cyclohexyl-5-mercapto-1H-tetrazole, 5,5'-bi-1H-tetrazole, and metal salts such as ammonium or Na salt, Zn salt, Ca salt, K salt and the like. And so on.
前記アゾール化合物の中でも、アンダーカットの抑制効果が高い観点から、テトラゾール化合物が好ましく、1H-テトラゾール、5-メチル-1H-テトラゾール、5-フェニル-1H-テトラゾール、5-アミノ-1H-テトラゾール、5,5’-ビ-1H-テトラゾール、およびこれらのアンモニウム塩または金属塩などがより好ましく、1H-テトラゾール、5-メチル-1H-テトラゾール、5-アミノ-1H-テトラゾール、およびこれらのアンモニウム塩または金属塩がさらに好ましい。これらのテトラゾール化合物は、導体パターンのトップ部から側面に薄く均一に保護皮膜を形成できると推定される。 Among the azole compounds, the tetrazole compound is preferable from the viewpoint of having a high effect of suppressing undercut, 1H-tetrazole, 5-methyl-1H-tetrazole, 5-phenyl-1H-tetrazole, 5-amino-1H-tetrazole, 5 , 5'-bi-1H-tetrazole, and ammonium salts or metal salts thereof, etc. are more preferred, 1H-tetrazole, 5-methyl-1H-tetrazole, 5-amino-1H-tetrazole, and ammonium salts or metals thereof. Salt is more preferred. It is presumed that these tetrazole compounds can form a thin and uniform protective film from the top portion to the side surface of the conductor pattern.
前記5員環を有する複素芳香族化合物(A)の濃度は、0.1~50g/Lであることが好ましく、0.1~15g/Lであることがより好ましく、0.2~10g/Lであることがさらに好ましい。前記5員環を有する複素芳香族化合物(A)の濃度が0.1g/L以上であれば、サイドエッチング(とくにトップ幅の減少)を確実に抑制できる。一方、前記5員環を有する複素芳香族化合物(A)の濃度が50g/L以下の場合は、エッチング速度の低下を防ぐことができ、かつエッチングされるべき部分を確実にエッチングできるため、ショート(絶縁不良)の発生を防ぐことができる。 The concentration of the heteroaromatic compound (A) having a 5-membered ring is preferably 0.1 to 50 g / L, more preferably 0.1 to 15 g / L, and 0.2 to 10 g / L. It is more preferably L. When the concentration of the heteroaromatic compound (A) having a 5-membered ring is 0.1 g / L or more, side etching (particularly reduction in top width) can be reliably suppressed. On the other hand, when the concentration of the heteroaromatic compound (A) having a 5-membered ring is 50 g / L or less, a decrease in the etching rate can be prevented and a portion to be etched can be reliably etched, so that a short circuit occurs. It is possible to prevent the occurrence of (insulation failure).
<5~7員環を有する脂肪族複素環式化合物(B)>
本発明の5~7員環を有する脂肪族複素環式化合物(B)は、環を構成するヘテロ原子として窒素を1つ以上有する脂肪族複素環式化合物である。前記5~7員環を有する脂肪族複素環式化合物(B)は、少なくとも1種を用いればよく、2種以上を組み合わせて用いることができる。
<Alphatic heterocyclic compound (B) having a 5- to 7-membered ring>
The aliphatic heterocyclic compound (B) having a 5- to 7-membered ring of the present invention is an aliphatic heterocyclic compound having one or more nitrogens as heteroatoms constituting the ring. At least one type of the aliphatic heterocyclic compound (B) having a 5- to 7-membered ring may be used, and two or more types may be used in combination.
前記5~7員環を有する脂肪族複素環式化合物(B)は、銅配線の直線性を低下させることなくサイドエッチングを抑制するために、環を構成するヘテロ原子として窒素のみを有するものが好ましい。また、前記5~7員環を有する脂肪族複素環式化合物(B)は、エッチング液中の安定性の観点から、環を構成する窒素の数が3以下の脂肪族複素環式化合物が好ましい。 The aliphatic heterocyclic compound (B) having a 5- to 7-membered ring has only nitrogen as a heteroatom constituting the ring in order to suppress side etching without deteriorating the linearity of the copper wiring. preferable. Further, the aliphatic heterocyclic compound (B) having a 5- to 7-membered ring is preferably an aliphatic heterocyclic compound having 3 or less nitrogens constituting the ring from the viewpoint of stability in the etching solution. ..
前記脂肪族複素環式化合物の具体例としては、例えば、ピロリジン骨格を有するピロリジン化合物、ピペリジン骨格を有するピペリジン化合物、ピペラジン骨格を有するピペラジン化合物、ホモピペラジン骨格を有するホモピペラジン化合物、ヘキサヒドロ-1,3,5-トリアジン骨格を有するヘキサヒドロ-1,3,5-トリアジン化合物等が例示できる。前記列挙した化合物は、脂肪族複素環が、アミノ基、アルキル基、アラルキル基、アリール基、ニトロ基、ニトロソ基、ヒドロキシル基、カルボキシル基、カルボニル基、アルコキシ基、ハロゲン基、アゾ基、シアノ基、イミノ基、ホスフィノ基、チオール基、スルホ基等の置換基で置換されていてもよい。 Specific examples of the aliphatic heterocyclic compound include, for example, a pyrrolidine compound having a pyrrolidine skeleton, a piperazine compound having a piperazine skeleton, a piperazine compound having a piperazine skeleton, a homopiperazine compound having a homopiperazine skeleton, and hexahydro-1,3. , A hexahydro-1,3,5-triazine compound having a 5-triazine skeleton and the like can be exemplified. In the compounds listed above, the aliphatic heterocycle has an amino group, an alkyl group, an aralkyl group, an aryl group, a nitro group, a nitroso group, a hydroxyl group, a carboxyl group, a carbonyl group, an alkoxy group, a halogen group, an azo group and a cyano group. , Imino group, phosphino group, thiol group, sulfo group and other substituents may be substituted.
前記ピロリジン化合物は、ピロリジン骨格を有する化合物であれば特に限定されないが、例えば、下記式(I)に示すピロリジン化合物が例示できる。
前記アミノ基とは、-NH2、-NHR、及び-NRR’の何れかを示し、前記R、R’はそれぞれ独立に炭素数1~10の炭化水素誘導基を示し、RとR’は互いに結合して飽和環構造を形成していてもよい。前記アミノ基含有置換基とは、アミノ基からなる置換基、及び炭素数1~10の炭化水素誘導基にて一部の水素がアミノ基に置き換わった置換基の何れかを示す。サイドエッチングを効果的に抑制し、かつ銅配線の直線性をより向上させる観点から、アミノ基からなる置換基、又は炭素、水素及び窒素からなるアミノ基含有置換基が好ましい。以下のアミノ基、及びアミノ基含有置換基も同様である。 The amino group indicates any of -NH 2 , -NHR, and -NRR', the R and R'independently indicate a hydrocarbon inducing group having 1 to 10 carbon atoms, and R and R'are. They may be bonded to each other to form a saturated ring structure. The amino group-containing substituent means either a substituent composed of an amino group or a substituent in which a part of hydrogen is replaced with an amino group by a hydrocarbon inducer having 1 to 10 carbon atoms. From the viewpoint of effectively suppressing side etching and further improving the linearity of copper wiring, a substituent consisting of an amino group or an amino group-containing substituent consisting of carbon, hydrogen and nitrogen is preferable. The same applies to the following amino groups and amino group-containing substituents.
前記炭化水素誘導基とは、炭化水素基にて一部の炭素又は水素が他の原子又は置換基に置き換わっていてもよいものを示す。炭化水素誘導基としては、例えば、メチル基、エチル基、プロピル基、ブチル基、ヒドロキシメチル基、ヒドロキシエチル基、ヒドロキシプロピル基、アリール基、アセチル基、フェニル基、ヒドロキシエトキシメチル基、ヒドロキシエトキシエチル基、ヒドロキシエトキシプロピル基等が例示でき、サイドエッチングを効果的に抑制し、かつ銅配線の直線性をより向上させる観点から、炭素及び水素からなる炭化水素誘導基が好ましい。以下の炭化水素誘導基も同様である。 The hydrocarbon-inducing group refers to a hydrocarbon group in which a part of carbon or hydrogen may be replaced with another atom or a substituent. Examples of the hydrocarbon inducing group include methyl group, ethyl group, propyl group, butyl group, hydroxymethyl group, hydroxyethyl group, hydroxypropyl group, aryl group, acetyl group, phenyl group, hydroxyethoxymethyl group and hydroxyethoxyethyl group. Group, hydroxyethoxypropyl group and the like can be exemplified, and a hydrocarbon inducing group composed of carbon and hydrogen is preferable from the viewpoint of effectively suppressing side etching and further improving the linearity of copper wiring. The same applies to the following hydrocarbon inducers.
前記ピロリジン化合物の具体例としては、例えば、ピロリジン、1-(2-ヒドロキシエチル)ピロリジン、インドリン、1-イソピロピル-3-ヒドロキシピロリジン、1,2-シクロヘキサンジカルボキシイミド、1-ブチルピロリジン、1-エチルピロリジン、2-(2-ヒドロキシエチル)-1-メチルピロリジン、2-メチルピロリジン、1-(2-ヒドロキシエチル)ピロリジン、1-(3-アミノプロピル)ピロリジン、1-(2-アミノエチル)ピロリジン、3-アミノピロリジン、2-アミノメチル-1-エチルピロリジン、2-(2-アミノエチル)-1-メチルピロリジン、3-(ジメチルアミノ)ピロリジン、3-(メチルアミノ)ピロリジン、1-(2-ピロリジニルメチル)ピロリジン、3-(ジエチルアミノ)ピロリジン、1,1’-ジメチル-3-アミノピロリジン、3-(エチルアミノ)ピロリジン、1-メチル-2-(1-ピペリジノメチル)ピロリジン、4-(1-ピロリジニル)ピペリジン、3-(N-アセチル-N-メチルアミノ)ピロリジン、3-(N-アセチル-N-エチルアミノ)ピロリジン、2-ピロリジンカルボキサミド、3-ピロリジンカルボキサミド、3-アセトアミドピロリジン、1-エチル-2-ピロリジンカルボキサミド、3-アミノ-1-(tert-ブトキシカルボニル)ピロリジン、3-(tert-ブトキシカルボニルアミノ)ピロリジン、1-アミノ-2-(メトキシメチル)ピロリジン、1-ベンジル-3-アミノピロリジン、1-ベンジル-3-(ジメチルアミノ)ピロリジン、1-ベンジル-3-(メチルアミノ)ピロリジン、1-ベンジル-3-(エチルアミノ)ピロリジン、3,4-ジアミノ-1-ベンジルピロリジン、1-ベンジル-3-アセトアミドピロリジン、(1s,6s)-2,8-ジアザビシクロ[4.3.0]ノナン等が挙げられる。 Specific examples of the pyrrolidine compound include, for example, pyrrolidine, 1- (2-hydroxyethyl) pyrrolidine, indolin, 1-isopyrrolidine-3-hydroxypyrrolidine, 1,2-cyclohexanedicarboxyimide, 1-butylpyrrolidine, 1-. Ethylpyrrolidine, 2- (2-hydroxyethyl) -1-methylpyrrolidine, 2-methylpyrrolidine, 1- (2-hydroxyethyl) pyrrolidine, 1- (3-aminopropyl) pyrrolidine, 1- (2-aminoethyl) Pyrrolidine, 3-aminopyrrolidine, 2-aminomethyl-1-ethylpyrrolidine, 2- (2-aminoethyl) -1-methylpyrrolidine, 3- (dimethylamino) pyrrolidine, 3- (methylamino) pyrrolidine, 1-( 2-Pyrrolidinylmethyl) pyrrolidine, 3- (diethylamino) pyrrolidine, 1,1'-dimethyl-3-aminopyrrolidine, 3- (ethylamino) pyrrolidine, 1-methyl-2- (1-piperidinomethyl) pyrrolidine, 4 -(1-Pyrrolidine) piperidine, 3- (N-acetyl-N-methylamino) pyrrolidine, 3- (N-acetyl-N-ethylamino) pyrrolidine, 2-pyrrolidincarboxamide, 3-pyrrolidincarboxamide, 3-acetamidopyrrolidine , 1-Ethyl-2-pyrrolidincarboxamide, 3-amino-1- (tert-butoxycarbonyl) pyrrolidine, 3- (tert-butoxycarbonylamino) pyrrolidine, 1-amino-2- (methoxymethyl) pyrrolidine, 1-benzyl -3-Aminopyrrolidine, 1-benzyl-3- (dimethylamino) pyrrolidine, 1-benzyl-3- (methylamino) pyrrolidine, 1-benzyl-3- (ethylamino) pyrrolidine, 3,4-diamino-1- Examples thereof include benzylpyrrolidine, 1-benzyl-3-acetamidepyrrolidine, (1s, 6s) -2,8-diazabicyclo [4.3.0] nonane and the like.
前記ピペリジン化合物は、ピペリジン骨格を有する化合物であれば特に限定されないが、例えば、下記式(II)に示すピペリジン化合物が例示できる。
前記ピペリジン化合物の具体例としては、例えば、ピペリジン、1-メチルピペリジン、2-メチルピペリジン、3-メチルピペリジン、4-メチルピペリジン、4-メチルピペリジン、3,5-ジメチルピペリジン、2-エチルピペリジン、4-ピペリジンカルボン酸、1,2,3,4-テトラヒドロキノリン、デカヒドロイソキノリン、2,6-ジメチルピペリジン、2-ピペリジンメタノール、3-ピペリジンメタノール、4-ピペリジンメタノール、2,2,6,6-テトラメチルピペリジン、4-アミノピペリジン、1-アミノピペリジン、3-アミノピペリジン、4-(アミノメチル)ピペリジン、4-アミノ-1-メチルピペリジン、2-(アミノメチル)ピペリジン、3-(アミノメチル)ピペリジン、4-ピペリジンカルボキサミド、2-ピペリジンカルボキサミド、1-(2-アミノエチル)ピペリジン、4-アセトアミドピペリジン、3-アセトアミドピペリジン、4-アミノ-1-イソプロピルピペリジン、1-(3-アミノプロピル)-2-メチルピペリジン、4-アミノ-2,2,6,6-テトラメチルピペリジン、2,2’-ビピペリジン、4,4’-ビピペリジン、4-ピペリジノピペリジン、4-アミノ-1-ピペリジンカルボン酸エチル、4-アミノ-1-ベンジルピペリジン、4-(2-アミノエチル)-1-ベンジルピペリジン、4-アセトアミド-1-ベンシルピペリジン等が挙げられる。 Specific examples of the piperidine compound include, for example, piperidine, 1-methylpiperidine, 2-methylpiperidine, 3-methylpiperidine, 4-methylpiperidine, 4-methylpiperidine, 3,5-dimethylpiperidine, 2-ethylpiperidine, and the like. 4-Piperidinecarboxylic acid, 1,2,3,4-tetrahydroquinoline, decahydroisoquinoline, 2,6-dimethylpiperidine, 2-piperidinemethanol, 3-piperidinemethanol, 4-piperidinemethanol, 2,2,6,6 -Tetramethylpiperidine, 4-aminopiperidine, 1-aminopiperidine, 3-aminopiperidine, 4- (aminomethyl) piperidine, 4-amino-1-methylpiperidine, 2- (aminomethyl) piperidine, 3- (aminomethyl) ) Piperidine, 4-piperidine carboxamide, 2-piperidine carboxamide, 1- (2-aminoethyl) piperidine, 4-acetamide piperidine, 3-acetamide piperidine, 4-amino-1-isopropylpiperidine, 1- (3-aminopropyl) -2-Methylpiperidine, 4-amino-2,2,6,6-tetramethylpiperidine, 2,2'-bipiperidine, 4,4'-bipiperidine, 4-piperidinopiperidine, 4-amino-1-piperidine Examples thereof include ethyl carboxylate, 4-amino-1-benzylpiperidine, 4- (2-aminoethyl) -1-benzylpiperidine, 4-acetamide-1-bencilpiperidine and the like.
前記ピペラジン化合物は、ピペラジン骨格を有する化合物であれば特に限定されないが、例えば、下記式(III)に示すピペラジン化合物が例示できる。
前記ピペラジン化合物の具体例としては、例えば、ピペラジン、1-メチルピペラジン、2-メチルピペラジン、1-アリルピペラジン、1-イソブチルピペラジン、1-ヒドロキシエトキシエチルピペラジン、1-フェニルピペラジン、1-アミノピペラジン、1-アミノエチルピペラジン、N-(2-アミノエチルピペラジン)、1-アミノ-4-メチルピペラジン、1-エチルピペラジン、1-ピペラジンエタノール、1-ピペラジンカルボン酸エチル、1-ホルミルピペラジン、1-プロピルピペラジン、1-アセチルピペラジン、1-イソプロピルピペラジン、1-シクロペンチルピペラジン、1-シクロヘキシルピペラジン、1-(2-メトキシエチル)ピペラジン、1-ピペロニルピペラジン、1-(ジフェニルメチル)ピペラジン、2-ピペラジノン、1,4-ジメチルピペラジン、1-メチル-3-フェニルピペラジン、1,4-ビス(3-アミノプロピル)ピペラジン、1-(2-ジメチルアミノエチル)-4-メチルピペラジン、1-(2-アミノエチル)ピペラジン、1,4-ビス(3-アミノプロピル)ピペラジン、2,5-ジメチルピペラジン、2,6-ジメチルピペラジン、1,4-ジホルミルピペラジン、1-(4-アミノフェニル)-4-メチルピペラジン、1,4-ジアセチル-2,5-ピペラジンジオン、1-メチル-4-(1,4’-ビピペリジン-4-イル)ピペラジン、1-(4-アミノフェニル)-4-(4-メトキシフェニル)ピペラジン、1,4-ジメチルピペラジン-2-オン、1,4-ジエチルピペラジン-2-オン、1,4-ジメチルピペラジン-2,3-ジオン、2-ピペラジンカルボン酸、トリエチレンジアミン等が挙げられる。 Specific examples of the piperazine compound include, for example, piperazine, 1-methylpiperazine, 2-methylpiperazine, 1-allylpiperazine, 1-isobutylpiperazine, 1-hydroxyethoxyethylpiperazine, 1-phenylpiperazine, 1-aminopiperazine, and the like. 1-Aminoethylpiperazine, N- (2-aminoethylpiperazine), 1-amino-4-methylpiperazine, 1-ethylpiperazine, 1-piperazineethanol, ethyl 1-piperazine carboxylate, 1-formylpiperazin, 1-propyl Piperazine, 1-acetyl piperazine, 1-isopropyl piperazine, 1-cyclopentyl piperazine, 1-cyclohexyl piperazine, 1- (2-methoxyethyl) piperazine, 1-piperonyl piperazine, 1- (diphenylmethyl) piperazine, 2-piperazinone , 1,4-dimethylpiperazine, 1-methyl-3-phenylpiperazine, 1,4-bis (3-aminopropyl) piperazine, 1- (2-dimethylaminoethyl) -4-methylpiperazine, 1- (2- (2-) Aminoethyl) piperazine, 1,4-bis (3-aminopropyl) piperazine, 2,5-dimethylpiperazine, 2,6-dimethylpiperazine, 1,4-diformylpiperazin, 1- (4-aminophenyl) -4 -Methylpiperazine, 1,4-diacetyl-2,5-piperazinedione, 1-methyl-4- (1,4'-bipiperidin-4-yl) piperazine, 1- (4-aminophenyl) -4- (4) -Mesterphenyl) piperazine, 1,4-dimethylpiperazine-2-one, 1,4-diethylpiperazine-2-one, 1,4-dimethylpiperazine-2,3-dione, 2-piperazine carboxylic acid, triethylenediamine, etc. Can be mentioned.
前記ホモピペラジン化合物は、ホモピペラジン骨格を有する化合物であれば特に限定されないが、例えば、下記式(IV)に示すホモピペラジン化合物が例示できる。
前記ホモピペラジン化合物の具体例としては、例えば、ホモピペラジン、1-メチルホモピペラジン、1-ホルミルホモピペラジン、1,4-ジメチルホモピペラジン、4-メチル-1-ホモピペラジンジチオカルボン酸、1-アセチルホモピペラジン、1-ブチリルホモピペラジン等が挙げられる。 Specific examples of the homopiperazine compound include, for example, homopiperazine, 1-methylhomopiperazine, 1-formylhomomopiperazine, 1,4-dimethylhomopirazine, 4-methyl-1-homopiperazine dithiocarboxylic acid, 1-acetyl. Examples thereof include homopiperazine and 1-butyryl homopiperazine.
前記ヘキサヒドロ-1,3,5-トリアジン化合物は、ヘキサヒドロ-1,3,5-トリアジン骨格を有する化合物であれば特に限定されないが、例えば、下記式(V)に示すヘキサヒドロ-1,3,5-トリアジン化合物が例示できる。
前記ヘキサヒドロ-1,3,5-トリアジン化合物の具体例としては、ヘキサヒドロ-1,3,5-トリアジン、ヘキサヒドロ-1,3,5-トリメチル-1,3,5-トリアジン、ヘキサヒドロ-2,4,6-トリメチル-1,3,5-トリアジン、ヘキサヒドロ-1,3,5-トリス(3-ジメチルアミノプロピル)-1,3,5-トリアジン、ヘキサヒドロ-1,3,5-トリプロピル-1,3,5-トリアジン、ヘキサヒドロ-1,3,5-トリエチル-1,3,5-トリアジン、ヘキサヒドロ-1,3,5-トリイソプロピル-1,3,5-トリアジン、ヘキサヒドロ-1,3,5-トリベンジル-1,3,5-トリアジン、ヘキサヒドロ-1,3,5-トリス(2-ヒドロキシエチル)-1,3,5-トリアジン、ヘキサヒドロ-1,3,5-トリニトロ-1,3,5-トリアジン、ヘキサヒドロ-1,3,5-トリニトロソ-1,3,5-トリアジン、ヘキサヒドロ-2,4,6-トリメチル-1,3,5-トリニトロ-1,3,5-トリアジン、ヘキサヒドロ-1,3,5-トリアクリロイル-1,3,5-トリアジン、ヘキサメチレンテトラミン等が挙げられる。 Specific examples of the hexahydro-1,3,5-triazine compound include hexahydro-1,3,5-triazine, hexahydro-1,3,5-trimethyl-1,3,5-triazine, and hexahydro-2,4. , 6-trimethyl-1,3,5-triazine, hexahydro-1,3,5-tris (3-dimethylaminopropyl) -1,3,5-triazine, hexahydro-1,3,5-tripropyl-1 , 3,5-triazine, hexahydro-1,3,5-triethyl-1,3,5-triazine, hexahydro-1,3,5-triisopropyl-1,3,5-triazine, hexahydro-1,3, 5-Tribenzyl-1,3,5-triazine, hexahydro-1,3,5-tris (2-hydroxyethyl) -1,3,5-triazine, hexahydro-1,3,5-trinitro-1,3, 5-Triazine, Hexahydro-1,3,5-Trinitroso-1,3,5-Triazine, Hexahydro-2,4,6-trimethyl-1,3,5-Trinitro-1,3,5-Triazine, Hexahydro- Examples thereof include 1,3,5-triacryloyl-1,3,5-triazine and hexamethylenetetramine.
前記5~7員環を有する脂肪族複素環式化合物(B)の濃度は、ファイン部とラフ部が混在した微細なピッチパターン領域に対するファインパターンの形成を向上させる観点から、0.01~10g/Lであることが好ましく、0.02~5g/Lであることがより好ましく、0.05~3g/Lであることがさらに好ましい。 The concentration of the aliphatic heterocyclic compound (B) having a 5- to 7-membered ring is 0.01 to 10 g from the viewpoint of improving the formation of a fine pattern for a fine pitch pattern region in which a fine portion and a rough portion are mixed. It is preferably / L, more preferably 0.02 to 5 g / L, and even more preferably 0.05 to 3 g / L.
<第三級または第四級窒素を含むカチオン性ポリマー>
本発明の第三級または第四級窒素を含むカチオン性ポリマーは、公知のものが使用でき、例えば、ジシアンジアミド・ジエチレントリアミン重縮合体などのジシアンジアミド・ポリアルキレンポリアミン重縮合体、ジシアンジアミド・ホルムアルデヒド重縮合体、ジシアンジアミド・トリエチレンテトラミン重縮合体などのジシアンアミド系カチオン性ポリマー;ポリアリルアミン、アリルアミン・ジメチルアリルアミン共重合体、ジアリルジメチルアンモニウムクロライド重縮合体、ジアリルアミン酢酸塩・二酸化硫黄共重合体、ジアリルメチルエチルアンモニウムエチルサルフェイト・二酸化硫黄共重合体、ポリアリルアミンアミド硫酸塩、アリルアミン酢酸塩・ジアリルアミン酢酸塩共重合体、メチルジアリルアミンアミド硫酸塩重合体、ジアリルアミンアミド硫酸塩・マレイン酸共重合体などのポリアリルアミン系カチオン性ポリマー;ジメチルアミン・エピクロルヒドリン重縮合体などの脂肪族モノアミンとエピハロヒドリン化合物との重縮合体などが挙げられる。これらの中でも、直線性に優れた銅配線を形成できる観点から、前記第三級または第四級窒素を含むカチオン性ポリマーは、ジシアンジアミド・ジエチレントリアミン重縮合体などのジシアンジアミド・ポリアルキレンポリアミン重縮合体、ジシアンジアミド・ホルムアルデヒド重縮合体、シアンジアミド・トリエチレンテトラミン重縮合体、ジアリルジメチルアンモニウムクロライド重縮合体が好ましい。前記第三級または第四級窒素を含むカチオン性ポリマーは、少なくとも1種を用いればよく、2種以上を組み合わせて用いることができる。
<Cationic polymer containing tertiary or quaternary nitrogen>
As the cationic polymer containing tertiary or quaternary nitrogen of the present invention, known ones can be used, for example, dicyandiamide / polyalkylene polyamine polycondensate such as dicyandiamide / diethylenetriamine polycondensate, dicyandiamide / formaldehyde polycondensate. , Dicyanamide-based cationic polymers such as dicyandiamide / triethylenetetramine polycondensate; polyallylamine, allylamine / dimethylallylamine copolymer, diallyldimethylammonium chloride polycondensate, diallylamine acetate / sulfur dioxide copolymer, diallylmethylethylammonium Polyallylamine-based such as ethylsulfate / sulfur dioxide copolymer, polyallylamineamide sulfate, allylamine acetate / diallylamine acetate copolymer, methyldiallylamineamide sulfate polymer, diallylamineamide sulfate / maleic acid copolymer, etc. Cationic polymers; polycondensates of aliphatic monoamines such as dimethylamine / epichlorohydrin polycondensate and epihalohydrin compounds can be mentioned. Among these, from the viewpoint of being able to form a copper wiring having excellent linearity, the cationic polymer containing the tertiary or quaternary nitrogen is a dicyandiamide / polyalkylene polyamine polycondensate such as a dicyandiamide / diethylenetriamine polycondensate. A dicyandiamide / formaldehyde polycondensate, a cyanidiamide / triethylenetetramine polycondensate, and a diallyldimethylammonium chloride polycondensate are preferable. As the cationic polymer containing tertiary or quaternary nitrogen, at least one type may be used, and two or more types may be used in combination.
前記第三級または第四級窒素を含むカチオン性ポリマーの濃度は、ファイン部とラフ部が混在した微細なピッチパターン領域に対するファインパターンの形成を向上させる観点から、0.001~10g/Lであることが好ましく、0.005~5g/Lであることがより好ましく、0.01~2g/Lであることがさらに好ましい。 The concentration of the cationic polymer containing tertiary or quaternary nitrogen is 0.001 to 10 g / L from the viewpoint of improving the formation of a fine pattern for a fine pitch pattern region in which a fine portion and a rough portion are mixed. It is preferably 0.005 to 5 g / L, more preferably 0.01 to 2 g / L, and even more preferably 0.01 to 2 g / L.
<グリコールエーテル類および/またはグリコール類>
本発明のエッチング液には、ファイン部とラフ部が混在した微細なピッチパターン領域に対して、ファインパターンの形成に優れ、ラフパターンの形成にも優れる観点から、グリコールエーテル類および/またはグリコール類を含むことが好ましい。前記グリコールエーテル類および/またはグリコール類は、2種以上を組み合わせて用いることができる。
<Glycol ethers and / or glycols>
The etching solution of the present invention contains glycol ethers and / or glycols from the viewpoint of excellent formation of a fine pattern and excellent formation of a rough pattern for a fine pitch pattern region in which a fine portion and a rough portion are mixed. It is preferable to include. The glycol ethers and / or glycols may be used in combination of two or more.
前記グリコールエーテル類としては、公知のものが使用でき、例えば、エチレングリコールモノメチルエーテル、ジエチレングリコールモノメチルエーテル、ジエチレングリコールジメチルエーテル、トリエチレングリコールモノメチルエーテル、エチレングリコールモノイソプロピルエーテル、ジエチレングリコールモノイソプロピルエーテル、エチレングリコールモノブチルエーテル、ジエチレングリコールモノブチルエーテル、トリエチレングリコールモノブチルエーテル、エチレングリコールモノイソブチルエーテル、ジエチレングリコールモノイソブチルエーテル、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、ジプロピレングリコールモノメチルエーテル、トリプロピレングリコールモノメチルエーテル、プロピレングリコールモノプロピルエーテル、ジプロピレングリコールモノプロピルエーテル、プロピレングリコールモノブチルエーテル、ジプロピレングリコールモノブチルエーテル、トリプロピレングリコールモノブチルエーテル、エチレングリコールジメチルエーテル、ジエチレングリコールジメチルエーテル、トリエチレングリコールジメチルエーテル、ジエチレングリコールメチルエチルエーテル、ジエチレングリコールジエチルエーテル、ジエチレングリコールジブチルエーテル、ジプロピレングリコールジメチルエーテルなどが挙げられる。これらの中でも、ジエチレングリコールジメチルエーテル、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、ジプロピレングリコールモノメチルエーテルが好ましい。 As the glycol ethers, known ones can be used, for example, ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, diethylene glycol dimethyl ether, triethylene glycol monomethyl ether, ethylene glycol monoisopropyl ether, diethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, and the like. Diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, ethylene glycol monoisobutyl ether, diethylene glycol monoisobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, propylene glycol monopropyl ether, Dipropylene glycol monopropyl ether, propylene glycol monobutyl ether, dipropylene glycol monobutyl ether, tripropylene glycol monobutyl ether, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, diethylene glycol methyl ethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, di Examples thereof include propylene glycol dimethyl ether. Among these, diethylene glycol dimethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, and dipropylene glycol monomethyl ether are preferable.
前記グリコール類としては、公知のものが使用でき、例えば、エチレングリコール、ジエチレングリコール、トリエチレングリコール、プロピレングリコール、メチルプロピレングリコール、ジメチルジグリコール、メチルエチルジグリコール、メチルジプロピレングリコール、メチルプロピレントリグリコール、ポリエチレングリコール、ポリプロピレングリコールなどが挙げられる。これらの中でも、ジエチレングリコール、メチルプロピレングリコール、メチルジプロピレングリコール、メチルエチルジグリコールが好ましい。 Known glycols can be used, for example, ethylene glycol, diethylene glycol, triethylene glycol, propylene glycol, methylpropylene glycol, dimethyldiglycol, methylethyldiglycol, methyldipropylene glycol, methylpropylenetriglycol, and the like. Examples thereof include polyethylene glycol and polypropylene glycol. Among these, diethylene glycol, methylpropylene glycol, methyldipropylene glycol, and methylethyldiglycol are preferable.
前記グリコールエーテル類および/またはグリコール類の濃度は、ファイン部とラフ部が混在した微細なピッチパターン領域に対するファインパターンとラフパターンの形成を向上させる観点から、0.01~30g/Lであることが好ましく、0.1~10g/Lであることがより好ましく、0.1~5g/Lであることがさらに好ましい。 The concentration of the glycol ethers and / or the glycols shall be 0.01 to 30 g / L from the viewpoint of improving the formation of the fine pattern and the rough pattern for the fine pitch pattern region in which the fine portion and the rough portion are mixed. Is more preferable, 0.1 to 10 g / L is more preferable, and 0.1 to 5 g / L is even more preferable.
本発明のエッチング液には、上述した成分以外にも、本発明の効果を妨げない程度に他の成分を添加してもよい。前記他の成分としては、例えば、ジエチレントリアミン、トリエチレンテトラミン、テトラエチルペンタミン、ペンタエチレンヘキサミンなどの脂肪族非環式化合物;カチオン界面活性剤、アニオン界面活性剤、両性界面活性剤などの成分安定剤を添加してもよい。なお、前記他の成分を添加する場合、その濃度は通常、0.001~5g/L程度である。 In addition to the above-mentioned components, other components may be added to the etching solution of the present invention to the extent that the effects of the present invention are not impaired. Examples of the other components include aliphatic acyclic compounds such as diethylenetriamine, triethylenetetramine, tetraethylpentamine and pentaethylenehexamine; and component stabilizers such as cationic surfactants, anionic surfactants and amphoteric surfactants. May be added. When the other components are added, the concentration is usually about 0.001 to 5 g / L.
前記エッチング液は、前記の各成分を水に溶解させることにより、容易に調製することができる。前記水としては、イオン性物質および不純物を除去した水が好ましく、例えば、イオン交換水、純水、超純水などが好ましい。 The etching solution can be easily prepared by dissolving each of the above components in water. As the water, water from which ionic substances and impurities have been removed is preferable, and for example, ion-exchanged water, pure water, ultrapure water and the like are preferable.
前記エッチング液は、各成分を使用時に所定の濃度になるように配合してもよく、濃縮液を調製しておき使用直前に希釈して使用してもよい。前記エッチング液の使用方法は、特に限定されないが、サイドエッチングを効果的に抑制するには、後述するようにスプレーを用いてエッチングすることが好ましい。また、使用時のエッチング液の温度は、特に制限はないが、生産性を高く維持した上で、サイドエッチングを効果的に抑制するには20~55℃で使用することが好ましい。 The etching solution may be blended so that each component has a predetermined concentration at the time of use, or a concentrated solution may be prepared and diluted immediately before use. The method of using the etching solution is not particularly limited, but in order to effectively suppress side etching, it is preferable to etch using a spray as described later. The temperature of the etching solution during use is not particularly limited, but it is preferably used at 20 to 55 ° C. in order to effectively suppress side etching while maintaining high productivity.
本発明の補給液は、本発明のエッチング液を連続または繰り返し使用する際に、前記エッチング液に添加する補給液であって、前記5員環を有する複素芳香族化合物(A)と、前記5~7員環を有する脂肪族複素環式化合物(B)と、前記分子内に第三級または第四級窒素を含むカチオン性ポリマーを含む水溶液である。前記補給液中の各成分は、上述した本発明のエッチング液に配合できる成分と同様である。前記補給液を添加することにより、前記エッチング液の各成分比が適正に保たれるため、上述した本発明のエッチング液の効果を安定して維持できる。 The replenisher of the present invention is a replenisher to be added to the etching solution when the etching solution of the present invention is used continuously or repeatedly, and is the heterocyclic compound (A) having the 5-membered ring and the above 5 It is an aqueous solution containing an aliphatic heterocyclic compound (B) having a to 7-membered ring and a cationic polymer containing tertiary or quaternary nitrogen in the molecule. Each component in the supplement solution is the same as the component that can be blended in the etching solution of the present invention described above. By adding the replenishing liquid, the ratio of each component of the etching liquid is maintained appropriately, so that the effect of the etching liquid of the present invention described above can be stably maintained.
また、本発明の補給液には、塩酸などの酸が含まれていてもよい。また、前記補給液には、塩化第二銅などの酸化性金属イオンが含まれていてもよい。また、前記補給液には、前記成分以外に、エッチング液に添加する他の成分が配合されていてもよい。尚、これらの前記補給液に含まれていてもよい成分は、前記補給液に含ませずに、本発明のエッチング液を連続または繰り返し使用する際に、本発明のエッチング液に直接添加することもできる。 Further, the supplementary solution of the present invention may contain an acid such as hydrochloric acid. Further, the supplement solution may contain oxidizing metal ions such as cupric chloride. In addition to the above components, the supplement solution may contain other components to be added to the etching solution. It should be noted that these components that may be contained in the replenishing solution should be added directly to the etching solution of the present invention when the etching solution of the present invention is used continuously or repeatedly without being contained in the replenishing solution. You can also.
本発明の銅配線の形成方法は、銅層のエッチングレジストで被覆されていない部分をエッチングする銅配線の形成方法において、上述した本発明のエッチング液を用いてエッチングすることを特徴とする。これにより、上述したように、ファイン部とラフ部が混在した微細なピッチパターン領域に対して、優れた銅配線のファインパターンが形成できる。また、本発明の銅配線の形成方法を採用した銅配線形成工程において、本発明のエッチング液を連続または繰り返し使用する場合は、上述した本発明の補給液を添加しながらエッチングすることが好ましい。前記エッチング液の各成分比が適正に保たれるため、上述した本発明のエッチング液の効果を安定して維持できるからである。 The method for forming a copper wiring of the present invention is a method for forming a copper wiring for etching a portion of a copper layer not covered with an etching resist, characterized in that etching is performed using the above-mentioned etching solution of the present invention. As a result, as described above, an excellent fine pattern of copper wiring can be formed in a fine pitch pattern region in which a fine portion and a rough portion are mixed. Further, in the copper wiring forming step adopting the copper wiring forming method of the present invention, when the etching solution of the present invention is continuously or repeatedly used, it is preferable to perform etching while adding the above-mentioned replenishing solution of the present invention. This is because the ratio of each component of the etching solution is maintained appropriately, so that the effect of the etching solution of the present invention described above can be stably maintained.
本発明の銅配線の形成方法では、前記銅層のエッチングレジストで被覆されていない部分に、前記エッチング液をスプレーにより噴霧することが好ましい。サイドエッチングを効果的に抑制できるからである。スプレーする際、ノズルは特に限定されず、扇形ノズル、充円錐ノズル、2流体ノズルなどが使用できる。 In the method for forming copper wiring of the present invention, it is preferable to spray the etching solution onto the portion of the copper layer that is not covered with the etching resist. This is because side etching can be effectively suppressed. When spraying, the nozzle is not particularly limited, and a fan-shaped nozzle, a conical nozzle, a two-fluid nozzle, or the like can be used.
スプレーでエッチングする場合、スプレー圧は、0.04MPa以上が好ましく、0.08MPa以上がより好ましい。スプレー圧が0.04MPa以上であれば、保護皮膜を適切な厚みで銅配線の側面に形成できる。これにより、サイドエッチングを効果的に防止できる。なお、前記スプレー圧は、エッチングレジストの破損防止の観点から0.40MPa以下が好ましい。 When etching by spraying, the spray pressure is preferably 0.04 MPa or more, more preferably 0.08 MPa or more. When the spray pressure is 0.04 MPa or more, a protective film can be formed on the side surface of the copper wiring with an appropriate thickness. As a result, side etching can be effectively prevented. The spray pressure is preferably 0.40 MPa or less from the viewpoint of preventing damage to the etching resist.
次に、本発明の実施例について比較例と併せて説明する。なお、本発明は下記の実施例に限定して解釈されるものではない。 Next, examples of the present invention will be described together with comparative examples. The present invention is not construed as being limited to the following examples.
表1~2に示す組成の各エッチング液を調製し、後述する条件でエッチングを行い、後述する評価方法により各項目について評価した。なお、表1~2に示す組成の各エッチング液において、残部はイオン交換水である。また、表1~2に示す塩酸の濃度は、塩化水素としての濃度である。 Each etching solution having the composition shown in Tables 1 and 2 was prepared, etched under the conditions described later, and each item was evaluated by the evaluation method described later. In each of the etching solutions having the compositions shown in Tables 1 and 2, the balance is ion-exchanged water. The concentration of hydrochloric acid shown in Tables 1 and 2 is the concentration of hydrogen chloride.
(使用した試験基板)
銅層の厚みが8μmの銅/ポリイミド積層板(東レフィルム加工製、商品名「PI-38N-CCS-08EO」)を用意し、この銅層上にフォトリソグラフィー法(レジスト剤(東京応化製「PMER-P-RZ30」))によってエッチングレジストパターンを形成した。エッチングレジストパターンは、厚み約4μm、ライン/スペース=11μm/7μmの18μmピッチパターン領域(ファイン部)と、ライン/スペース=16μm/9μmの25μmピッチパターン領域(ラフ部)とが、混在したレジストパターンを作製した。
(Test board used)
A copper / polyimide laminated plate (manufactured by Toray Film Co., Ltd., trade name "PI-38N-CCS-08EO") with a copper layer thickness of 8 μm was prepared, and a photolithography method (resist agent (resist agent (manufactured by Tokyo Ohka)) was prepared on this copper layer. An etching resist pattern was formed by PMER-P-RZ30 ")). The etching resist pattern is a resist pattern in which an 18 μm pitch pattern region (fine portion) having a thickness of about 4 μm and a line / space = 11 μm / 7 μm and a 25 μm pitch pattern region (rough portion) having a line / space = 16 μm / 9 μm are mixed. Was produced.
(エッチング条件)
エッチングは、扇形ノズル(いけうち社製、商品名「ISVV9020」)を使用して、スプレー圧0.20MPa、処理温度35℃の条件で行った。処理時間については、18μmピッチにおいて、銅配線のボトム幅が8~15μmになる時間とした。エッチング後、水洗、乾燥を行って、以下に示す評価を行った。
(Etching conditions)
Etching was performed using a fan-shaped nozzle (manufactured by Ikeuchi Co., Ltd., trade name "ISVV9020") under the conditions of a spray pressure of 0.20 MPa and a processing temperature of 35 ° C. The processing time was set to a time during which the bottom width of the copper wiring became 8 to 15 μm at a pitch of 18 μm. After etching, it was washed with water and dried, and the evaluation shown below was performed.
(ファインパターンの評価)
エッチング処理した各試験基板を、塩酸(塩化水素濃度:7重量%)を用いて、扇形ノズル(いけうち社製、商品名:ISVV9020)でスプレー圧0.15MPa、処理時間40秒で保護皮膜を除去し、アセトンに20秒間(もしくは、3重量%水酸化ナトリウム水溶液60秒間)浸漬し、エッチングレジストを除去した。そして、各試験基板の一部を切断し、これを冷間埋め込み樹脂に埋め込み、配線の断面を観察できるように研磨加工をおこない、断面観察用のサンプルを作製した。配線の断面観察は、光学顕微鏡を用いて、画像撮影をし、配線のトップ幅およびボトム幅の計測をおこなった。この時、計測は、n=2以上おこない、トップ幅およびボトム幅は、この平均値とした。尚、表中のB-Tは、銅配線のボトム幅-トップ幅の値である。表中のファイン部の欄は、ライン/スペース=11μm/7μmの18μmピッチパターン領域のB-Tの値が0≦B-T≦2μmの場合を○、それ以外の場合を×とした。ファイン部の直線性はボトム幅を50点測長し、それらの標準偏差を割り出し、0.50以下の場合を〇(直線性の合格基準)、それ以外の場合を×と判断した。また、ラフ部の欄は、ライン/スペース=19μm/9μmの25μmのピッチパターン領域のB-Tの値が0以上であれば、ラフパターンのボトム部でのくびれが発生し難い観点から好ましい。さらに、ファイン部のB-Tからラフ部のB-Tを引いた数値を疎密差と定義し、この数値が0に近いほど、ファイン部とラフ部のエッチング性に差ないと判断できるため、好ましい。
(Evaluation of fine pattern)
Each etched test substrate was sprayed with hydrochloric acid (hydrogen chloride concentration: 7% by weight) using a fan-shaped nozzle (manufactured by Ikeuchi, trade name: ISVV9020) at a spray pressure of 0.15 MPa and a protective film removed in 40 seconds. Then, it was immersed in acetone for 20 seconds (or 3 wt% aqueous sodium hydroxide solution for 60 seconds) to remove the etching resist. Then, a part of each test substrate was cut, embedded in a cold-embedded resin, and polished so that the cross section of the wiring could be observed to prepare a sample for cross-section observation. To observe the cross section of the wiring, an image was taken using an optical microscope, and the top width and bottom width of the wiring were measured. At this time, the measurement was performed with n = 2 or more, and the top width and the bottom width were taken as the average value. In addition, BT in the table is the value of the bottom width-top width of the copper wiring. In the column of the fine part in the table, the case where the value of BT in the 18 μm pitch pattern region of line / space = 11 μm / 7 μm was 0 ≦ BT ≦ 2 μm was marked with ◯, and the other cases were marked with ×. For the linearity of the fine part, the bottom width was measured at 50 points, the standard deviations were calculated, and when it was 0.50 or less, it was judged as 〇 (passing standard for linearity), and in other cases, it was judged as x. Further, the column of the rough portion is preferable from the viewpoint that constriction at the bottom portion of the rough pattern is unlikely to occur when the value of BT in the pitch pattern region of 25 μm of line / space = 19 μm / 9 μm is 0 or more. Further, the value obtained by subtracting the rough part BT from the fine part BT is defined as the sparse / dense difference, and it can be judged that the closer this value is to 0, the more the etching property of the fine part and the rough part is not different. preferable.
Claims (8)
前記エッチング液は、酸と、酸化性金属イオンと、5員環を有する複素芳香族化合物(A)と、5~7員環を有する脂肪族複素環式化合物(B)と、分子内に第三級または第四級窒素を含むカチオン性ポリマーを含み、
前記5員環を有する複素芳香族化合物(A)は、環を構成するヘテロ原子として窒素原子を1つ以上有する複素芳香族化合物であり、
前記5~7員環を有する脂肪族複素環式化合物(B)は、環を構成するヘテロ原子として窒素原子を1つ以上有し、かつアミノ基含有置換基で置換された脂肪族複素環式化合物であることを特徴とするエッチング液。 It ’s a copper etching solution.
The etching solution contains an acid, an oxidizing metal ion, a heterocyclic compound (A) having a 5-membered ring, and an aliphatic heterocyclic compound (B) having a 5- to 7-membered ring. Contains cationic polymers containing tertiary or quaternary nitrogen,
The heteroaromatic compound (A) having a 5-membered ring is a heteroaromatic compound having one or more nitrogen atoms as heteroatoms constituting the ring.
The aliphatic heterocyclic compound (B) having a 5- to 7-membered ring has one or more nitrogen atoms as heteroatoms constituting the ring and is substituted with an amino group-containing substituent. An etching solution characterized by being a compound.
前記補給液は、5員環を有する複素芳香族化合物(A)と、5~7員環を有する脂肪族複素環式化合物(B)と、分子内に第三級または第四級窒素を含むカチオン性ポリマーを含む水溶液であり、
前記5員環を有する複素芳香族化合物(A)は、環を構成するヘテロ原子として窒素原子を1つ以上有する複素芳香族化合物であり、
前記5~7員環を有する脂肪族複素環式化合物(B)は、環を構成するヘテロ原子として窒素原子を1つ以上有し、かつアミノ基含有置換基で置換された脂肪族複素環式化合物であることを特徴とする補給液。 A supplementary liquid to be added to the etching liquid when the etching liquid according to any one of claims 1 to 6 is used continuously or repeatedly.
The replenisher contains a heteroaromatic compound (A) having a 5-membered ring, an aliphatic heterocyclic compound (B) having a 5- to 7-membered ring, and tertiary or quaternary nitrogen in the molecule. An aqueous solution containing a cationic polymer.
The heteroaromatic compound (A) having a 5-membered ring is a heteroaromatic compound having one or more nitrogen atoms as heteroatoms constituting the ring.
The aliphatic heterocyclic compound (B) having a 5- to 7-membered ring has one or more nitrogen atoms as heteroatoms constituting the ring and is substituted with an amino group-containing substituent. A replenisher characterized by being a compound.
請求項1~7のいずれかに記載のエッチング液を用いてエッチングすることを特徴とする銅配線の形成方法。 A method for forming copper wiring that etches a portion of a copper layer that is not covered with an etching resist.
A method for forming copper wiring, which comprises etching with the etching solution according to any one of claims 1 to 7.
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JP4472006B2 (en) * | 2007-09-04 | 2010-06-02 | メック株式会社 | Etching solution and method of forming conductor pattern |
JP4521460B2 (en) * | 2008-02-20 | 2010-08-11 | メック株式会社 | Etching solution and method of forming copper wiring using the same |
JP2013104104A (en) * | 2011-11-14 | 2013-05-30 | Mec Kk | Etching solution, replenishment solution, and method for forming copper wiring |
KR101714453B1 (en) * | 2013-04-15 | 2017-03-22 | 멕크 가부시키가이샤 | Etching solution, replenishing solution and method for forming copper wiring |
JP6000420B1 (en) * | 2015-08-31 | 2016-09-28 | メック株式会社 | Etching solution, replenisher, and method for forming copper wiring |
KR102404226B1 (en) * | 2016-10-31 | 2022-06-02 | 주식회사 이엔에프테크놀로지 | ETCHANT composition |
JP6736088B2 (en) * | 2017-05-22 | 2020-08-05 | メック株式会社 | Etching solution, replenishing solution and method for forming copper wiring |
JP6338232B1 (en) * | 2017-09-22 | 2018-06-06 | メック株式会社 | Copper surface roughening method and wiring board manufacturing method |
-
2020
- 2020-01-24 JP JP2020009907A patent/JP7129711B2/en active Active
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2021
- 2021-01-20 TW TW110102077A patent/TWI799783B/en active
- 2021-01-20 KR KR1020210007860A patent/KR20210095806A/en active Search and Examination
- 2021-01-21 CN CN202110081388.2A patent/CN113179590A/en active Pending
- 2021-10-05 JP JP2021163820A patent/JP2022008849A/en active Pending
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JP2021116449A (en) | 2021-08-10 |
KR20210095806A (en) | 2021-08-03 |
JP7129711B2 (en) | 2022-09-02 |
TWI799783B (en) | 2023-04-21 |
TW202136581A (en) | 2021-10-01 |
CN113179590A (en) | 2021-07-27 |
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