JP2022001410A - Substrate and manufacturing method for liquid ejection head - Google Patents

Substrate and manufacturing method for liquid ejection head Download PDF

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JP2022001410A
JP2022001410A JP2020106316A JP2020106316A JP2022001410A JP 2022001410 A JP2022001410 A JP 2022001410A JP 2020106316 A JP2020106316 A JP 2020106316A JP 2020106316 A JP2020106316 A JP 2020106316A JP 2022001410 A JP2022001410 A JP 2022001410A
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resin
plate material
substrate
bottomed hole
manufacturing
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一久 岡野
Kazuhisa Okano
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Canon Inc
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Canon Inc
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Abstract

To provide a manufacturing method for a substrate, enabling the occurrence of breakage of the substrate to be suppressed, and furthermore enabling a through-hole to be easily formed.MEANS FOR SOLVING THE PROBLEM: A manufacturing method for a substrate 1 includes: forming a bottomed hole 2a that is open to one surface 3 of a plate material 1a and has a bottom portion on a side of the other surface 6; and forming a resin 4 in a part in the bottomed hole 2a and providing in remaining part, an empty space 5 not filled with resin 4; and grinding the plate material 1a and thinning the plate material 1a while removing the bottom portion and the resin 4 in the bottomed hole 2a. The resin 4 is formed on the side of the other surface 6 in the bottomed hole 2a, and the empty space 5 is provided further on a side of the one surface 3 than the resin 4 in the bottomed hole 2a. Grinding of the plate material 1a is performed from the side of the other side 6 of the plate material 1a, the bottom portion and the resin 4 are removed, and a through-hole 2 comprised of the empty space 5 is formed.SELECTED DRAWING: Figure 2

Description

本発明は、基板および液体吐出ヘッドの製造方法に関する。 The present invention relates to a method for manufacturing a substrate and a liquid discharge head.

液体吐出ヘッドに含まれる半導体ウエハ等の基板において、インクなどの流体を流通させるための貫通孔が設けられることがある。例えば厚さが１００μｍ〜３００μｍ程度の薄い基板にフォトリソグラフィ工程等により貫通孔を形成すると、基板の割れやクラックなどの破損が生じ易い。それに対し、所定の厚さよりも厚い基板に有底穴を形成しておき、有底穴の底部分側から基板を研削して所定の厚さまで薄化するとともに底部分を除去して貫通孔を形成する場合もある。その場合、特許文献１に記載されているように、有底穴の内部に樹脂を埋め込んでおくことにより、研削時の衝撃による破損を抑制することができる。 In a substrate such as a semiconductor wafer included in a liquid ejection head, a through hole for allowing a fluid such as ink to flow may be provided. For example, when a through hole is formed in a thin substrate having a thickness of about 100 μm to 300 μm by a photolithography process or the like, the substrate is liable to be cracked or damaged. On the other hand, a bottomed hole is formed in a substrate thicker than a predetermined thickness, and the substrate is ground from the bottom portion side of the bottomed hole to thin it to a predetermined thickness and the bottom portion is removed to form a through hole. It may form. In that case, as described in Patent Document 1, by embedding the resin inside the bottomed hole, damage due to impact during grinding can be suppressed.

特開2017-112268号公報Japanese Unexamined Patent Publication No. 2017-112268

特許文献１に記載されている方法では、有底穴の全体にモールド樹脂を充填させている。従って、研削して薄化した後の基板に、硬化した樹脂が残っている。薄化した後の割れ易い基板を破損することなく、硬化した樹脂を除去することは困難である。すなわち板材の研削時のチッピング等の破損を抑制して、薄化された基板から硬化した樹脂を除去して貫通孔を形成することは容易ではない。 In the method described in Patent Document 1, the entire bottomed hole is filled with the mold resin. Therefore, the cured resin remains on the substrate after grinding and thinning. It is difficult to remove the cured resin without damaging the fragile substrate after thinning. That is, it is not easy to suppress damage such as chipping during grinding of the plate material and remove the cured resin from the thinned substrate to form a through hole.

本発明の目的は、破損の発生を抑制しつつ、貫通孔を容易に形成できる基板および液体吐出ヘッドの製造方法を提供することにある。 An object of the present invention is to provide a method for manufacturing a substrate and a liquid discharge head capable of easily forming through holes while suppressing the occurrence of breakage.

本発明の貫通孔を有する基板の製造方法は、板材に、当該板材の一方の面に開口して他方の面側に底部分を有する有底穴を形成することと、有底穴内の一部に樹脂を形成するとともに、残部に、樹脂が充填されていない空隙部を設けることと、板材を研削し、底部分と有底穴内の樹脂とを除去しつつ板材を薄化することと、を含み、樹脂は、有底穴内の他方の面側に形成され、空隙部は、有底穴内の樹脂よりも一方の面側に設けられ、板材の研削を板材の他方の面側から行い、底部分と樹脂を除去するとともに、空隙部からなる貫通孔を形成することを特徴とする。 The method for manufacturing a substrate having a through hole of the present invention is to form a bottomed hole in the plate material by opening on one surface of the plate material and having a bottom portion on the other surface side, and a part of the bottomed hole. In addition to forming the resin in, the remaining part is provided with a void part that is not filled with the resin, and the plate material is ground to thin the plate material while removing the bottom portion and the resin in the bottomed hole. Including, the resin is formed on the other side of the bottomed hole, the void is provided on one side of the resin in the bottomed hole, and the plate is ground from the other side of the plate to the bottom. It is characterized by removing a portion and a resin and forming a through hole composed of a void portion.

本発明によると、破損の発生を抑制しつつ、貫通孔を容易に形成できる基板および液体吐出ヘッドの製造方法を提供することができる。 According to the present invention, it is possible to provide a method for manufacturing a substrate and a liquid discharge head capable of easily forming a through hole while suppressing the occurrence of breakage.

本発明の第１の実施形態の基板の製造方法の一部を示す断面図である。It is sectional drawing which shows a part of the manufacturing method of the substrate of 1st Embodiment of this invention. 本発明の第１の実施形態の基板の製造方法の各工程を示す断面図である。It is sectional drawing which shows each process of the manufacturing method of the substrate of 1st Embodiment of this invention. 図２に示す製造方法のフローチャートである。It is a flowchart of the manufacturing method shown in FIG. 本発明の実施例１の基板の製造方法の各工程を示す断面図である。It is sectional drawing which shows each process of the manufacturing method of the substrate of Example 1 of this invention. 本発明の実施例２の板材と有底穴および樹脂を示す断面図である。It is sectional drawing which shows the plate material, the bottomed hole and the resin of Example 2 of this invention. 本発明の実施例２の基板の製造方法の各工程を示す断面図である。It is sectional drawing which shows each process of the manufacturing method of the substrate of Example 2 of this invention. 本発明の実施例３の基板の製造方法の各工程を示す断面図である。It is sectional drawing which shows each process of the manufacturing method of the substrate of Example 3 of this invention. 本発明の実施例４において製造された基板を示す断面図および拡大断面図である。It is sectional drawing and enlarged sectional drawing which shows the substrate manufactured in Example 4 of this invention. 本発明の実施例４の基板の製造方法の各工程を示す断面図および拡大断面図である。It is sectional drawing and enlarged sectional drawing which show each process of the manufacturing method of the substrate of Example 4 of this invention. 本発明の実施例５の基板の製造方法の各工程を示す断面図である。It is sectional drawing which shows each process of the manufacturing method of the substrate of Example 5 of this invention. 本発明の液体吐出ヘッドの製造方法の各工程を示す断面図である。It is sectional drawing which shows each process of the manufacturing method of the liquid discharge head of this invention.

以下、本発明の実施形態について図面を参照して説明する。
［第１の実施形態］
図１は、本発明の第１の実施形態の基板の製造方法の一部を示す断面図である。図２は、本発明の第１の実施形態の基板１の製造方法の各工程を示す断面図であり、図３はその製造方法を示すフローチャートである。
本発明の第１の実施形態の製造方法により製造される基板１は、厚さ方向に貫通する貫通孔２を有する基板である。この完成状態の基板１の厚さ、言い換えると基板１の仕上げ厚さをＴとする。本実施形態では、厚さＴの基板１を製造するために、図１に示すように厚さＴよりも大きい厚さｔ１を有する板材１ａに深さｔ２の有底穴２ａを形成し、有底穴２ａ内の一部に樹脂４を形成し、残部に、樹脂４が充填されていない空隙部５を設ける。そして、この板材１ａを研削して、有底穴２ａの底部分と有底穴２ａ内の樹脂４とを除去しつつ板材１ａを薄化する。図１には研削停止線Ａを図示している。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[First Embodiment]
FIG. 1 is a cross-sectional view showing a part of the method for manufacturing a substrate according to the first embodiment of the present invention. FIG. 2 is a cross-sectional view showing each step of the manufacturing method of the substrate 1 according to the first embodiment of the present invention, and FIG. 3 is a flowchart showing the manufacturing method.
The substrate 1 manufactured by the manufacturing method of the first embodiment of the present invention is a substrate having a through hole 2 penetrating in the thickness direction. Let T be the thickness of the substrate 1 in this completed state, in other words, the finished thickness of the substrate 1. In the present embodiment, in order to manufacture the substrate 1 having a thickness T, a bottomed hole 2a having a depth t2 is formed in a plate material 1a having a thickness t1 larger than the thickness T as shown in FIG. The resin 4 is formed in a part of the bottom hole 2a, and the void portion 5 not filled with the resin 4 is provided in the remaining portion. Then, the plate material 1a is ground to thin the plate material 1a while removing the bottom portion of the bottomed hole 2a and the resin 4 in the bottomed hole 2a. FIG. 1 shows a grinding stop line A.

本実施形態の基板１の製造方法について、より詳細に説明する。基板１を製造するために、一方の面（図２の下面である第１の面）３に半導体（図示せず）が形成され、完成状態の基板１の厚さＴよりも大きい厚さｔ１を有する板材１ａに対して、図２（ａ）に示すように第１の面３から有底穴２ａを形成する（ステップＳ１）。有底穴２ａは、板材１ａの一方の面（第１の面３）に開口して、他方の面側（図２の上面である第２の面６側）に底部分を有する。有底穴２ａの深さｔ２は、完成状態の基板１の厚さＴよりも大きい。次に、図２（ｂ）〜２（ｃ）に示すように、有底穴２ａに樹脂４を注入する（ステップＳ２）。それから、図２（ｄ）に示すように、有底穴２ａ内の樹脂４の一部を除去して、有底穴２ａ内に、樹脂４で充填されていない空隙部５を形成する（ステップＳ３）。空隙部５の深さｔ３は、完成状態の基板１の厚さＴと一致するか、それよりも僅かに大きい程度である。最後に、他方の面（図２の上面である第２の面）６から板材１ａを研削して、図２（ｅ）に示すように、完成状態の基板１の厚さＴになるまで薄化する（ステップＳ４）。研削量はｔ１−Ｔである。こうして、基板１が完成する。この基板１は、厚さ方向に貫通する貫通孔２を有している。なお、本明細書において、貫通孔２や有底穴２ａは、細長い平面形状を有する溝状であってもよい。 The manufacturing method of the substrate 1 of the present embodiment will be described in more detail. In order to manufacture the substrate 1, a semiconductor (not shown) is formed on one surface (the first surface which is the lower surface of FIG. 2) 3, and the thickness t1 is larger than the thickness T of the completed substrate 1. As shown in FIG. 2A, a bottomed hole 2a is formed from the first surface 3 with respect to the plate material 1a having the above (step S1). The bottomed hole 2a is opened on one surface (first surface 3) of the plate material 1a and has a bottom portion on the other surface side (second surface 6 side which is the upper surface of FIG. 2). The depth t2 of the bottomed hole 2a is larger than the thickness T of the completed substrate 1. Next, as shown in FIGS. 2 (b) to 2 (c), the resin 4 is injected into the bottomed hole 2a (step S2). Then, as shown in FIG. 2D, a part of the resin 4 in the bottomed hole 2a is removed to form a void portion 5 not filled with the resin 4 in the bottomed hole 2a (step). S3). The depth t3 of the gap portion 5 is equal to or slightly larger than the thickness T of the completed substrate 1. Finally, the plate material 1a is ground from the other surface (second surface which is the upper surface of FIG. 2) 6 and thinned to the thickness T of the completed substrate 1 as shown in FIG. 2 (e). (Step S4). The grinding amount is t1-T. In this way, the substrate 1 is completed. The substrate 1 has a through hole 2 penetrating in the thickness direction. In the present specification, the through hole 2 and the bottomed hole 2a may have a groove shape having an elongated planar shape.

本実施形態の製造方法によると、板材１ａの研削される領域において、有底穴２ａ内に樹脂４が充填されている。従って、研削に起因して有底穴２ａおよびその周辺にチッピングやクラック等の破損が生じることが樹脂４によって抑制される。また、研削により薄化された後の基板１の貫通孔２には樹脂４が実質的に残っていないため、樹脂を除去する作業（例えば強力な洗浄工程）を行う必要がない。従って、貫通孔２を容易に形成できるとともに、樹脂を除去する作業によって基板１および貫通孔２の形状の精度が低下することはない。この製造方法の詳細について、以下に記載する。 According to the manufacturing method of the present embodiment, the resin 4 is filled in the bottomed hole 2a in the region to be ground of the plate material 1a. Therefore, the resin 4 suppresses damage such as chipping and cracks in and around the bottomed hole 2a due to grinding. Further, since the resin 4 does not substantially remain in the through hole 2 of the substrate 1 after being thinned by grinding, it is not necessary to perform an operation of removing the resin (for example, a strong cleaning step). Therefore, the through hole 2 can be easily formed, and the accuracy of the shapes of the substrate 1 and the through hole 2 is not deteriorated by the work of removing the resin. Details of this manufacturing method will be described below.

（基板）
本発明の基板１としては、シリコン、ガリウムヒ素、インジウムリンなどからなる半導体基板を用いることができる。特に、深堀孔開け手法であるドライエッチング（ボッシュプロセス）や異方性ウェットエッチングの技術が確立しているシリコン基板が本発明に適している。例えば、平面形状が直径２００ｍｍの円形であって研削前の厚さｔ１が７２５μmのシリコン基板が、板材１ａとして好適に用いられる。また、事前に薄化等の加工が施された厚さ５０μm程度の薄いシリコン基板を、板材１ａとして用いることもできる。 (substrate)
As the substrate 1 of the present invention, a semiconductor substrate made of silicon, gallium arsenide, indium phosphide, or the like can be used. In particular, a silicon substrate for which dry etching (Bosch process), which is a deep drilling method, and anisotropic wet etching techniques have been established is suitable for the present invention. For example, a silicon substrate having a planar shape having a diameter of 200 mm and a thickness t1 before grinding of 725 μm is preferably used as the plate material 1a. Further, a thin silicon substrate having a thickness of about 50 μm, which has been thinned in advance, can be used as the plate material 1a.

（有底穴）
ステップＳ１において板材１ａに形成する有底穴２ａは、板材１ａの第１の面３に開口し、その反対側の第２の面６には開口せず閉じている。有底穴２ａの開口形状および断面形状は、円形、楕円形、四角形状、多角形など任意の形状であってよい。また、有底穴２ａの開口寸法は、樹脂４が充填されて硬化させられる寸法であればよく、例えば直径または長径の長さが１μmから数ｃｍ程度であってよい。板材１ａを薄化する前の有底穴２ａの深さｔ２は、完成状態の基板１の厚さＴよりも大きい。なお、完成状態の基板１では、基板１を厚さ方向に貫通する貫通孔２が形成されているため、貫通孔２の深さは基板１の厚さＴと一致する。有底穴２ａは、例えばシリコンからなる板材１ａに等方性ドライエッチングや、ボッシュプロセスによるエッチングや、異方性ウェットエッチング等によって形成することができる。また、有底穴２ａをレーザー加工によって形成することもできる。 (Bottomed hole)
The bottomed hole 2a formed in the plate material 1a in step S1 is opened in the first surface 3 of the plate material 1a, and is closed without opening in the second surface 6 on the opposite side thereof. The opening shape and the cross-sectional shape of the bottomed hole 2a may be any shape such as a circular shape, an elliptical shape, a quadrangular shape, and a polygonal shape. The opening size of the bottomed hole 2a may be any size as long as it can be filled with the resin 4 and cured, and for example, the diameter or the major axis may have a length of about 1 μm to several cm. The depth t2 of the bottomed hole 2a before the plate material 1a is thinned is larger than the thickness T of the completed substrate 1. Since the through hole 2 that penetrates the substrate 1 in the thickness direction is formed in the completed substrate 1, the depth of the through hole 2 matches the thickness T of the substrate 1. The bottomed hole 2a can be formed in, for example, a plate material 1a made of silicon by isotropic dry etching, etching by a Bosch process, anisotropic wet etching, or the like. Further, the bottomed hole 2a can also be formed by laser processing.

（樹脂）
本実施形態で用いられる樹脂４は、硬化処理前は一般的な溶剤によって剥離可能であるが、硬化処理後は剥離困難な硬化樹脂である。有底穴２ａに樹脂４を形成するための各工程は、板材１ａへの樹脂４の塗布、塗布した樹脂４の有底穴２ａ内への充填、板材１ａの表面上の樹脂４と有底穴２ａ内の樹脂４の一部の除去、有底穴２ａの内部に残った樹脂４の硬化処理の順番に実施される。板材１ａへの塗布の均一性や、有底穴２ａへの充填の容易性等の観点から、硬化処理前の樹脂４は低粘度であることが好ましい。また、板材１ａの表面上の樹脂４と有底穴２ａ内の樹脂４の一部の除去の際に、未硬化の樹脂４が一般的な溶剤や剥離液で容易に除去でき、かつ有底穴２ａ内の未硬化の樹脂４の除去量を制御できることが望ましい。有底穴２ａ内の未硬化の樹脂４の除去量の制御は、溶剤や剥離液の浸漬時間によって制御することができる。また、樹脂４は、板材１ａの研削時の有底穴２ａの形状保持性の観点から、硬化後の硬度が高く、硬化処理における体積収縮率が低いことが好ましい。さらに、樹脂４は、有底穴２ａ内に残された樹脂４が十分に硬化されるような硬化処理を実施できるものであることが好ましい。このような樹脂４として、フェノール樹脂、メラミン樹脂、エポキシ樹脂などの熱硬化性樹脂が適している。 (resin)
The resin 4 used in the present embodiment is a cured resin that can be peeled off with a general solvent before the curing treatment, but is difficult to peel off after the curing treatment. Each step for forming the resin 4 in the bottomed hole 2a includes applying the resin 4 to the plate material 1a, filling the coated resin 4 into the bottomed hole 2a, and forming the resin 4 and the bottomed surface of the plate material 1a. A part of the resin 4 in the hole 2a is removed, and the resin 4 remaining inside the bottomed hole 2a is cured in this order. From the viewpoint of uniformity of application to the plate material 1a, ease of filling into the bottomed hole 2a, and the like, it is preferable that the resin 4 before the curing treatment has a low viscosity. Further, when the resin 4 on the surface of the plate material 1a and a part of the resin 4 in the bottomed hole 2a are removed, the uncured resin 4 can be easily removed with a general solvent or a stripping liquid, and the bottomed hole 2a is bottomed. It is desirable to be able to control the amount of uncured resin 4 removed in the hole 2a. The amount of uncured resin 4 removed from the bottomed hole 2a can be controlled by the immersion time of the solvent or the stripping liquid. Further, the resin 4 preferably has a high hardness after curing and a low volume shrinkage in the curing process from the viewpoint of maintaining the shape of the bottomed hole 2a during grinding of the plate material 1a. Further, it is preferable that the resin 4 can be cured so that the resin 4 left in the bottomed hole 2a can be sufficiently cured. As such a resin 4, a thermosetting resin such as a phenol resin, a melamine resin, or an epoxy resin is suitable.

（樹脂を有底穴内に形成する工程）
前述した各材料を用いて、貫通孔２を有する薄い基板１を製造するための各工程の詳細について、さらに説明する。
樹脂４を有底穴２ａ内に形成する工程では、図２（ａ）に示すように完成状態の基板１の厚さＴよりも大きい厚さｔ１を有し、第１の面３から形成された有底穴２ａを有する板材１ａを、真空環境下に配置する。そして、図２（ｂ）に示すように、有底穴２ａが形成されている第１の面３を樹脂４で被覆する。これにより、有底穴２ａ内は真空状態で密閉される。その後、図２（ｃ）に示すように、板材１ａを大気に開放すると、差圧で樹脂４が有底穴２ａ内に浸入して充填される。なお、樹脂４による板材１ａの被覆は、ドライフィルムを用いたラミネート法、真空環境下でのスピン塗布法、あるいはスリットコーター法等によって行われる。また、有底穴２ａ内への樹脂４の充填は、毛細管現象を利用した方法によって行ってもよい。 (Step of forming resin in bottomed hole)
The details of each step for manufacturing the thin substrate 1 having the through hole 2 by using each of the above-mentioned materials will be further described.
In the step of forming the resin 4 in the bottomed hole 2a, as shown in FIG. 2A, the resin 4 has a thickness t1 larger than the thickness T of the completed substrate 1 and is formed from the first surface 3. The plate material 1a having the bottomed hole 2a is arranged in a vacuum environment. Then, as shown in FIG. 2B, the first surface 3 on which the bottomed hole 2a is formed is covered with the resin 4. As a result, the inside of the bottomed hole 2a is sealed in a vacuum state. After that, as shown in FIG. 2C, when the plate material 1a is opened to the atmosphere, the resin 4 penetrates into the bottomed hole 2a by a differential pressure and is filled. The plate material 1a is coated with the resin 4 by a laminating method using a dry film, a spin coating method in a vacuum environment, a slit coater method, or the like. Further, the bottomed hole 2a may be filled with the resin 4 by a method utilizing a capillary phenomenon.

（樹脂の一部を除去して有底穴内に空隙部を設ける工程）
図２（ｄ）に示すように、板材１ａの第１の面３を被覆する樹脂４を除去するとともに、有底穴２ａ内に充填された樹脂４の一部を除去して空隙部５を形成する。空隙部５は、樹脂４で被覆されていた第１の面３側に設けられ、樹脂４は、有底穴２ａ内において、第２の面６側に位置する。空隙部５の深さｔ３、すなわち樹脂４を除去する深さは、完成状態の基板の厚さ（仕上げ厚さ）Ｔと同程度の大きさである。このように樹脂４の一部を除去して空隙部５を形成することは、板材１ａを有機溶剤や剥離剤の槽に浸漬して樹脂４を溶解させることによって行える。有機溶剤としては一般的な溶剤が使用可能であり、剥離剤としては、使用される樹脂４に対応した一般的な剥離剤が使用可能である。樹脂の除去量および空隙部５の深さｔ３は、有機溶剤または剥離剤の種類の選択や、浸漬時間の調整によって制御できる。あるいは、アッシングによって樹脂４の一部を除去して空隙部５を形成することもできる。その場合、プラズマ密度や、バイアス電圧や、アッシング時間を調整することにより、樹脂４の除去量および空隙部５の深さｔ３を制御することができる。 (Step of removing a part of the resin and providing a void in the bottomed hole)
As shown in FIG. 2D, the resin 4 covering the first surface 3 of the plate material 1a is removed, and a part of the resin 4 filled in the bottomed hole 2a is removed to fill the void portion 5. Form. The gap portion 5 is provided on the side of the first surface 3 covered with the resin 4, and the resin 4 is located on the side of the second surface 6 in the bottomed hole 2a. The depth t3 of the gap portion 5, that is, the depth at which the resin 4 is removed is about the same as the thickness (finishing thickness) T of the completed substrate. The void portion 5 can be formed by removing a part of the resin 4 in this way by immersing the plate material 1a in a tank of an organic solvent or a release agent to dissolve the resin 4. As the organic solvent, a general solvent can be used, and as the release agent, a general release agent corresponding to the resin 4 used can be used. The amount of resin removed and the depth t3 of the void 5 can be controlled by selecting the type of organic solvent or release agent and adjusting the immersion time. Alternatively, a part of the resin 4 can be removed by ashing to form the void portion 5. In that case, the amount of resin 4 removed and the depth t3 of the void 5 can be controlled by adjusting the plasma density, the bias voltage, and the ashing time.

（板材を薄化する工程）
板材１ａを、半導体および有底穴２ａが形成された第１の面３と反対側の第２の面６から研削して、図２（ｅ）に示すように所定の厚さＴの基板１を形成する。この時、有底穴２ａの底部分が除去されるとともに、有底穴２ａ内に残っていた樹脂４も板材１ａとともに研削されて除去される。その結果、基板１を厚さ方向に貫通して基板１の両面に開口する貫通孔２が形成される。板材１ａの研削は、一般的なバックグラインド装置を用いて実施できる。 (Process for thinning plate material)
The plate material 1a is ground from the second surface 6 opposite to the first surface 3 on which the semiconductor and the bottomed hole 2a are formed, and as shown in FIG. 2E, the substrate 1 having a predetermined thickness T is ground. To form. At this time, the bottom portion of the bottomed hole 2a is removed, and the resin 4 remaining in the bottomed hole 2a is also ground and removed together with the plate material 1a. As a result, through holes 2 are formed that penetrate the substrate 1 in the thickness direction and open on both sides of the substrate 1. Grinding of the plate material 1a can be performed using a general backgrinding device.

前述したように、空隙部５の深さｔ３は、完成状態の基板１の厚さＴと一致することが好ましいが、厚さＴよりも僅かに大きくてもよく、僅かに小さくてもよい。空隙部５の深さｔ３が完成状態の基板１の厚さＴよりも小さい場合には、研削されて薄化された後の基板１の貫通孔２内に僅かに樹脂４が残る。硬化後の樹脂４は除去困難な材料であるため、樹脂４を形成する前に有底穴２ａ内に離型材を塗布しておき、樹脂４を形成して板材１ａを研削した後に洗浄工程を追加することで、樹脂４を容易に除去することができる。すなわち、この場合には、板材１ａの研削と洗浄とによって有底穴２ａ内の樹脂４を完全に除去する。有底穴２ａの内面に離型材を塗布すると、板材１ａを研削する際の研削粉が有底穴２ａの内面に付着しにくいという利点がある。ただし、樹脂４の除去の容易さを考慮すると、空隙部５の深さｔ３は、完成状態の基板１の厚さＴよりも数μｍ程度小さい程度までに留めることが好ましい。 As described above, the depth t3 of the gap portion 5 is preferably the same as the thickness T of the completed substrate 1, but it may be slightly larger or slightly smaller than the thickness T. When the depth t3 of the gap portion 5 is smaller than the thickness T of the completed substrate 1, a small amount of the resin 4 remains in the through hole 2 of the substrate 1 after being ground and thinned. Since the resin 4 after curing is a material that is difficult to remove, a mold release material is applied in the bottomed hole 2a before the resin 4 is formed, and after the resin 4 is formed and the plate material 1a is ground, a cleaning step is performed. By adding the resin 4, the resin 4 can be easily removed. That is, in this case, the resin 4 in the bottomed hole 2a is completely removed by grinding and cleaning the plate material 1a. When the mold release material is applied to the inner surface of the bottomed hole 2a, there is an advantage that the grinding powder when grinding the plate material 1a does not easily adhere to the inner surface of the bottomed hole 2a. However, considering the ease of removal of the resin 4, it is preferable that the depth t3 of the gap 5 is kept to a degree smaller than the thickness T of the completed substrate 1 by about several μm.

一方、空隙部５の深さｔ３が完成状態の基板１の厚さＴよりも大きい場合には、板材１ａの研削時に有底穴２ａ内の樹脂４も除去されて、貫通孔２を有する基板１が形成される。ただし、板材１ａが所定の厚さＴになる前、すなわち、研削による板材１ａの薄化が完了する前に、有底穴２ａ内の樹脂４が消失して板材１ａを厚さ方向に貫通する貫通孔２が形成される。その状態で板材１ａの研削を続行すると、研削粉が貫通孔２の内面に付着する可能性がある。空隙部５の深さｔ３が、完成状態の基板１の厚さＴよりも数μｍ程度大きい程度であると、貫通孔２の内面に付着する研削粉は少量であるので、薄化した後の基板に簡易な洗浄工程を施すことで容易に研削粉を除去することができるため好ましい。すなわち、空隙部５の深さｔ３と完成状態の基板１の厚さＴとの差が±１０μｍ以下であることが好ましい。 On the other hand, when the depth t3 of the gap portion 5 is larger than the thickness T of the completed substrate 1, the resin 4 in the bottomed hole 2a is also removed when the plate material 1a is ground, and the substrate having the through hole 2 is obtained. 1 is formed. However, before the plate material 1a reaches a predetermined thickness T, that is, before the thinning of the plate material 1a by grinding is completed, the resin 4 in the bottomed hole 2a disappears and penetrates the plate material 1a in the thickness direction. The through hole 2 is formed. If the grinding of the plate material 1a is continued in that state, the grinding powder may adhere to the inner surface of the through hole 2. When the depth t3 of the gap portion 5 is about several μm larger than the thickness T of the completed substrate 1, the amount of grinding powder adhering to the inner surface of the through hole 2 is small, so that after thinning. It is preferable to perform a simple cleaning step on the substrate because the grinding powder can be easily removed. That is, it is preferable that the difference between the depth t3 of the gap portion 5 and the thickness T of the completed substrate 1 is ± 10 μm or less.

本発明によると、硬化後に除去することが容易ではない樹脂４が、研削されて薄化された基板１の貫通孔２内にはほとんど残らないため、硬化した樹脂４を除去するための強力な洗浄工程が不要である。そして、硬化した樹脂４を除去するための工程による基板１の割れ等のリスクを低減し、信頼性を向上させることができる。 According to the present invention, the resin 4 which is not easy to remove after curing hardly remains in the through hole 2 of the ground and thinned substrate 1, so that it is powerful for removing the cured resin 4. No cleaning process is required. Then, the risk of cracking of the substrate 1 due to the process for removing the cured resin 4 can be reduced, and the reliability can be improved.

以下、本発明のより詳細な実施例について具体的に説明する。ただし、本発明はこれらの実施例に限定されるものではない。
［実施例１］
本発明の実施例１の基板１の製造方法について説明する。本実施例では、平面形状が直径２００ｍｍの円形であって厚さｔ１が７２５μmのシリコンからなる板材１ａを用いる。板材１ａの第１の面３には図示しない半導体が形成されており、ドライエッチング（シリコンエッチング）によって、図４（ａ）に示すように第１の面３において開口してその反対側の第２の面６側は閉じている有底穴２ａが形成されている。有底穴２ａの開口形状は直径１００μｍの円形であり、有底穴２ａの深さｔ２は２００μmである。図４に示す例では、有底穴２ａの底部分に湾曲形状を有しているが、湾曲形状が設けられていなくてもよい。 Hereinafter, more detailed embodiments of the present invention will be specifically described. However, the present invention is not limited to these examples.
[Example 1]
The method of manufacturing the substrate 1 of the first embodiment of the present invention will be described. In this embodiment, a plate material 1a made of silicon having a planar shape of 200 mm in diameter and a thickness t1 of 725 μm is used. A semiconductor (not shown) is formed on the first surface 3 of the plate material 1a, and the first surface 3 is opened on the first surface 3 by dry etching (silicon etching) as shown in FIG. 4A, and the second surface on the opposite side thereof is opened. A closed bottomed hole 2a is formed on the surface 6 side of 2. The opening shape of the bottomed hole 2a is a circle with a diameter of 100 μm, and the depth t2 of the bottomed hole 2a is 200 μm. In the example shown in FIG. 4, the bottom portion of the bottomed hole 2a has a curved shape, but the curved shape may not be provided.

図４（ｂ）に示すように、厚さ１００μmのベースフィルム１１上に、平面形状が２５０ｍｍ×２５０ｍｍの正方形であって厚さが３０μmの樹脂層４ａを形成して、２層構造のドライフィルム１０を形成する。ベースフィルム１１は、ＰＥＴ（ポリエチレンテレフタレート）やＰＰ（ポリプロピレン）などからなる一般的な樹脂フィルムである。樹脂層４ａは、１５０℃で１０分間の加熱により硬化する低粘度型熱硬化型エポキシ樹脂からなる。この低粘度型熱硬化型エポキシ樹脂は、３０℃環境下での粘度は７Ｐａ・ｓである。樹脂層４ａは市販のスピン塗布装置を用いて形成され、樹脂層４ａの膜厚はスピン塗布装置のフィルム回転数の調整によって制御される。 As shown in FIG. 4B, a resin layer 4a having a planar shape of 250 mm × 250 mm and a thickness of 30 μm is formed on a base film 11 having a thickness of 100 μm to form a two-layer structure dry film. Form 10. The base film 11 is a general resin film made of PET (polyethylene terephthalate), PP (polypropylene), or the like. The resin layer 4a is made of a low-viscosity thermosetting epoxy resin that is cured by heating at 150 ° C. for 10 minutes. This low-viscosity thermosetting epoxy resin has a viscosity of 7 Pa · s under a 30 ° C. environment. The resin layer 4a is formed by using a commercially available spin coating device, and the film thickness of the resin layer 4a is controlled by adjusting the film rotation speed of the spin coating device.

図４（ｃ）に示すように、板材１ａとドライフィルム１０を真空チャンバー１２内に挿入し、板材１ａの第１の面３とドライフィルム１０の樹脂層４ａの表面とが向かい合うように配置する。そして、真空チャンバー１２内を圧力５０Ｐａになるまで真空引きし、ラミネート温度３０℃でドライフィルム１０を板材１ａにラミネートする。真空引きされた状態で有底穴２ａの開口部がドライフィルム１０によって塞がれ、有底穴２ａは減圧状態で密閉される。 As shown in FIG. 4C, the plate material 1a and the dry film 10 are inserted into the vacuum chamber 12 and arranged so that the first surface 3 of the plate material 1a and the surface of the resin layer 4a of the dry film 10 face each other. .. Then, the inside of the vacuum chamber 12 is evacuated until the pressure reaches 50 Pa, and the dry film 10 is laminated on the plate material 1a at a laminating temperature of 30 ° C. The opening of the bottomed hole 2a is closed by the dry film 10 in a vacuumed state, and the bottomed hole 2a is sealed in a reduced pressure state.

ドライフィルム１０を板材１ａにラミネートした後に、真空チャンバー１２を大気開放するか、または、ドライフィルム１０がラミネートされた板材１ａを真空チャンバー１２から取り出す。それにより、有底穴２ａ内の負圧とドライフィルム１０の外側の大気圧との差圧で、図４（ｄ）に示すように、樹脂層４ａを形成している樹脂４の一部が有底穴２ａ内に充填される。このように、真空チャンバー１２内を用いた真空引きとラミネート法とを用いて、樹脂４の有底穴２ａ内への充填を行うことができる。ただし、真空チャンバー１２内を用いた真空引きとスピン塗布法またはスリットコーター法とを用いて、樹脂４の有底穴２ａ内への充填を行うこともできる。また、有底穴２ａの径が小さい場合には、毛細管現象を利用して樹脂４を有底穴２ａ内へ充填することもできる。 After laminating the dry film 10 on the plate material 1a, the vacuum chamber 12 is opened to the atmosphere, or the plate material 1a on which the dry film 10 is laminated is taken out from the vacuum chamber 12. As a result, as shown in FIG. 4D, a part of the resin 4 forming the resin layer 4a is formed by the difference pressure between the negative pressure in the bottomed hole 2a and the atmospheric pressure outside the dry film 10. The bottomed hole 2a is filled. In this way, the bottomed hole 2a of the resin 4 can be filled by using the vacuuming method using the inside of the vacuum chamber 12 and the laminating method. However, it is also possible to fill the bottomed hole 2a of the resin 4 by using a vacuum drawing using the inside of the vacuum chamber 12 and a spin coating method or a slit coater method. Further, when the diameter of the bottomed hole 2a is small, the resin 4 can be filled into the bottomed hole 2a by utilizing the capillary phenomenon.

樹脂４が有底穴２ａ内に充填された状態で、図４（ｅ）に示すようにベースフィルム１１を剥離して、樹脂層４ａを露出させる。樹脂４の粘度が低い場合には、５０〜６０℃程度の仮硬化処理を施して、樹脂４が板材１ａ内を流動することを抑制することが好ましい。そして、樹脂層４ａがラミネートされた板材１ａを、アセトンなどの一般的な有機溶剤に３０分程度浸漬する。有機溶剤によって、図４（ｆ）に示すように、板材１ａの第１の面３にラミネートされた樹脂層４ａを除去するとともに、有底穴２ａ内の樹脂４の一部を除去する。有底穴２ａ内の樹脂４は開口部側（第１の面３側）の一部が除去され、底部分側（第２の面６側）の一部は残留する。有底穴２ａの、樹脂４が除去された部分は空隙部５になる。有底穴２ａ内の樹脂４の除去量、言い換えると空隙部５の深さｔ３は、溶剤の種類の選択や浸漬時間の調整などによって制御することができるため、空隙部５の深さｔ３が、完成状態の基板１の厚さＴと同程度になるように制御する。 With the resin 4 filled in the bottomed hole 2a, the base film 11 is peeled off as shown in FIG. 4 (e) to expose the resin layer 4a. When the viscosity of the resin 4 is low, it is preferable to perform a temporary hardening treatment at about 50 to 60 ° C. to prevent the resin 4 from flowing in the plate material 1a. Then, the plate material 1a on which the resin layer 4a is laminated is immersed in a general organic solvent such as acetone for about 30 minutes. As shown in FIG. 4 (f), the resin layer 4a laminated on the first surface 3 of the plate material 1a is removed by the organic solvent, and a part of the resin 4 in the bottomed hole 2a is removed. A part of the resin 4 in the bottomed hole 2a on the opening side (first surface 3 side) is removed, and a part of the bottom part side (second surface 6 side) remains. The portion of the bottomed hole 2a from which the resin 4 has been removed becomes the void portion 5. Since the amount of resin 4 removed from the bottomed hole 2a, in other words, the depth t3 of the gap portion 5 can be controlled by selecting the type of solvent and adjusting the immersion time, the depth t3 of the gap portion 5 is set. , The thickness T of the completed substrate 1 is controlled to be about the same as that of the substrate 1.

第１の面３上の樹脂層４ａと有底穴２ａ内の樹脂の一部が除去された板材１ａを、図示しないオーブン内に挿入して１５０℃で１０分間程度ベークする。それにより、有底穴２ａ内に残っている樹脂４を硬化させる。図４（ｇ）に示すように、有底穴２ａ内の一部に樹脂４が残るとともに空隙部５が形成された板材１ａの第１の面３に、研削用テープ１３を貼り付ける。研削用テープ１３は第１の面３の保護を目的としており、市販のＵＶ硬化型バックグラインドテープを使用することができる。 The plate material 1a from which the resin layer 4a on the first surface 3 and the part of the resin in the bottomed hole 2a have been removed is inserted into an oven (not shown) and baked at 150 ° C. for about 10 minutes. As a result, the resin 4 remaining in the bottomed hole 2a is cured. As shown in FIG. 4 (g), the grinding tape 13 is attached to the first surface 3 of the plate material 1a in which the resin 4 remains in a part of the bottomed hole 2a and the gap portion 5 is formed. The grinding tape 13 is intended to protect the first surface 3, and a commercially available UV curable backgrinding tape can be used.

図４（ｈ）に示すように、板材１ａの第２の面６を研削して、厚さＴになるまで板材１ａを薄化する。この研削によって、板材１ａの有底穴２ａの底部分と、有底穴２ａ内の一部に残る樹脂４とが除去される。本実施例では、厚さｔ１−Ｔ＝５７５μｍだけ研削し、研削されずに残った基板１の厚さＴは１５０μｍである。こうして厚さＴになるまで薄化された基板１の研削加工面上には、底部分が除去された貫通孔２が開口している。こうして、両面に開口する貫通孔２を有する基板１が形成される。板材１ａの研削は、市販の研削装置を用いて行うことができる。図４（ｉ）に示すように、研削用テープ１３に対してＵＶ照射を行い、研削用テープ１３を剥離することで、貫通孔２を有する厚さ１５０μｍの基板１が製造される。このように、有底穴２ａに樹脂４と空隙部５を設け、板材１ａが研削される範囲に樹脂４を位置させ、研削されない範囲に空隙部５を位置させることで、研削加工時の有底穴２ａの周囲のチッピングやクラックの発生を抑制しながら、樹脂４を容易に除去できる。 As shown in FIG. 4 (h), the second surface 6 of the plate material 1a is ground to thin the plate material 1a until the thickness T is reached. By this grinding, the bottom portion of the bottomed hole 2a of the plate material 1a and the resin 4 remaining in a part of the bottomed hole 2a are removed. In this embodiment, the thickness T of the substrate 1 remaining after grinding by the thickness t1-T = 575 μm is 150 μm. On the ground surface of the substrate 1 thinned to a thickness T in this way, a through hole 2 from which the bottom portion has been removed is opened. In this way, the substrate 1 having the through holes 2 opened on both sides is formed. Grinding of the plate material 1a can be performed using a commercially available grinding device. As shown in FIG. 4 (i), by irradiating the grinding tape 13 with UV and peeling off the grinding tape 13, a substrate 1 having a through hole 2 and a thickness of 150 μm is manufactured. In this way, the resin 4 and the gap portion 5 are provided in the bottomed hole 2a, the resin 4 is positioned in the range where the plate material 1a is ground, and the gap portion 5 is located in the range where the plate material 1a is not ground. The resin 4 can be easily removed while suppressing the generation of chipping and cracks around the bottom hole 2a.

［実施例２］
本発明の実施例２の基板１の製造方法について説明する。以下、実施例１との相違点について主に説明し、実施例１と同様な方法および構成については説明を省略する場合がある。
本実施例では、例えばボッシュプロセスを行うエッチングによって、底部分の先端部分が湾曲した湾曲形状部分（Ｒ形状部分）２ｂになっている有底穴２ａを形成する。有底穴２ａを有する板材１ａの断面図である図５（ａ）と、そのＣ部分の拡大図である図５（ｂ）に示すように、ボッシュプロセスで形成された有底穴２ａの底部分は、略半球状である。この構成によると、板材１ａを第２の面６から研削して底部分を除去する際に鋭利な形状が形成されず、チッピングの発生により貫通孔２の形状が崩れることが抑制できる。特に、本実施例では、図５に示すように、有底穴２ａの、湾曲した先端部分２ｂを含む底部分に樹脂４を充填し、その樹脂４を硬化している。それにより、有底穴２ａの、湾曲した先端部分２ｂを含む底部分が、硬化した樹脂４によって保護され、チッピングを抑制する信頼性が高い。 [Example 2]
The method of manufacturing the substrate 1 of the second embodiment of the present invention will be described. Hereinafter, the differences from the first embodiment will be mainly described, and the description of the same method and configuration as that of the first embodiment may be omitted.
In this embodiment, for example, by etching by performing a Bosch process, a bottomed hole 2a is formed in which the tip portion of the bottom portion is a curved curved shape portion (R-shaped portion) 2b. As shown in FIG. 5A which is a cross-sectional view of the plate material 1a having the bottomed hole 2a and FIG. 5B which is an enlarged view of the C portion thereof, the bottom of the bottomed hole 2a formed by the Bosch process. The portion is substantially hemispherical. According to this configuration, when the plate material 1a is ground from the second surface 6 to remove the bottom portion, a sharp shape is not formed, and it is possible to prevent the shape of the through hole 2 from being deformed due to the occurrence of chipping. In particular, in this embodiment, as shown in FIG. 5, the bottom portion of the bottomed hole 2a including the curved tip portion 2b is filled with the resin 4 and the resin 4 is cured. As a result, the bottom portion of the bottomed hole 2a including the curved tip portion 2b is protected by the cured resin 4, and the chipping is suppressed with high reliability.

本実施例では、図４（ａ）〜図４（ｅ）に示す実施例１の各工程と同様に、有底穴２ａを有する板材１ａに、ベースフィルム１１と樹脂層４ａとを有する２層構造のドライフィルム１０を重ね合わせる。そして、真空引きと、ラミネート法、スピン塗布法またはスリットコーター法とを用いて、あるいは毛細管現象を利用して、有底穴２ａ内に樹脂４を充填する。それからベースフィルム１１を剥離して、樹脂層４ａを露出させる。 In this embodiment, as in each step of Example 1 shown in FIGS. 4 (a) to 4 (e), a plate material 1a having a bottomed hole 2a has two layers having a base film 11 and a resin layer 4a. The dry films 10 of the structure are overlapped. Then, the resin 4 is filled in the bottomed hole 2a by using the vacuuming method, the laminating method, the spin coating method, the slit coater method, or by using the capillary phenomenon. Then, the base film 11 is peeled off to expose the resin layer 4a.

次に、樹脂層４ａがラミネートされた板材１ａを、アセトンなどの一般的な有機溶剤に６０分程度浸漬する。有機溶剤によって、図６（ａ）に示すように、板材１ａの第１の面３にラミネートされた樹脂層４ａを除去するとともに、有底穴２ａ内の樹脂４の一部を除去し、空隙部５を形成する。本実施例では、実施例１よりも板材１ａの溶剤への浸漬時間が長く、有底穴２ａ内の樹脂４の除去量が多いが、少なくとも有底穴２ａの底部分の湾曲した先端部分２ｂを樹脂４で覆うようにする。それから、この樹脂４を硬化させる。図６（ｂ）に示すように、空隙部５が形成された板材１ａの第１の面３に研削用テープ１３を貼り付け、板材１ａの第２の面６を研削して、図６（ｃ）に示すように厚さＴになるまで板材１ａを薄化する。図６（ｄ）に示すように研削用テープ１３を剥離して、貫通孔２を有する基板１が完成する。本実施例では、例えばボッシュプロセスによって有底穴２ａの底部分の先端部分のコーナー部分を湾曲形状にすることにより、有底穴２ａ内に残る樹脂４の量が少なくても、板材１ａの研削時のチッピング等の破損を抑制できる。なお、図示しないが、有底穴２ａの底部分の先端部分２ｂをＲ形状部分ではなく傾斜部分（面取り部分）にすることもできる。 Next, the plate material 1a on which the resin layer 4a is laminated is immersed in a general organic solvent such as acetone for about 60 minutes. As shown in FIG. 6A, the resin layer 4a laminated on the first surface 3 of the plate material 1a is removed by the organic solvent, and a part of the resin 4 in the bottomed hole 2a is removed to remove the voids. Form part 5. In this embodiment, the immersion time of the plate material 1a in the solvent is longer than that of the first embodiment, and the amount of the resin 4 removed in the bottomed hole 2a is larger, but at least the curved tip portion 2b of the bottom portion of the bottomed hole 2a is formed. Is covered with the resin 4. Then, this resin 4 is cured. As shown in FIG. 6B, the grinding tape 13 is attached to the first surface 3 of the plate material 1a in which the gap portion 5 is formed, and the second surface 6 of the plate material 1a is ground to obtain FIG. 6 (b). As shown in c), the plate material 1a is thinned to a thickness T. As shown in FIG. 6D, the grinding tape 13 is peeled off to complete the substrate 1 having the through hole 2. In this embodiment, for example, by forming the corner portion of the tip portion of the bottom portion of the bottomed hole 2a into a curved shape by a Bosch process, the plate material 1a can be ground even if the amount of the resin 4 remaining in the bottomed hole 2a is small. Damage such as chipping at the time can be suppressed. Although not shown, the tip portion 2b of the bottom portion of the bottomed hole 2a may be an inclined portion (chamfered portion) instead of the R-shaped portion.

［実施例３］
本発明の実施例３の基板１の製造方法について説明する。以下、実施例１〜２との相違点について主に説明し、実施例１〜２と同様な方法および構成については説明を省略する場合がある。
本実施例では、図４（ａ）〜図４（ｆ）に示す実施例１の各工程と同様に、有底穴２ａを有する板材１ａに、ベースフィルム１１と樹脂層４ａとを有する２層構造のドライフィルム１０を重ね合わせる。そして、真空引きと、ラミネート法、スピン塗布法またはスリットコーター法とを用いて、あるいは毛細管現象を利用して、有底穴２ａ内に樹脂４を充填する。それからベースフィルム１１を剥離して、樹脂層４ａを露出させる。樹脂層４ａがラミネートされた板材１ａを有機溶剤に浸漬して、板材１ａの第１の面３にラミネートされた樹脂層４ａと有底穴２ａ内の樹脂４の一部を除去し、有底穴２ａ内に空隙部５を形成する。空隙部５の深さｔ３が、完成状態の基板１の厚さＴと同程度になるように制御する。 [Example 3]
The method of manufacturing the substrate 1 of the third embodiment of the present invention will be described. Hereinafter, the differences from the first and second embodiments will be mainly described, and the description of the same method and configuration as those of the first and second embodiments may be omitted.
In this embodiment, as in each step of Example 1 shown in FIGS. 4 (a) to 4 (f), a plate material 1a having a bottomed hole 2a has two layers having a base film 11 and a resin layer 4a. The dry films 10 of the structure are overlapped. Then, the resin 4 is filled in the bottomed hole 2a by using the vacuuming method, the laminating method, the spin coating method, the slit coater method, or by using the capillary phenomenon. Then, the base film 11 is peeled off to expose the resin layer 4a. The plate material 1a on which the resin layer 4a is laminated is immersed in an organic solvent to remove a part of the resin layer 4a laminated on the first surface 3 of the plate material 1a and the resin 4 in the bottomed hole 2a. A gap 5 is formed in the hole 2a. The depth t3 of the gap portion 5 is controlled to be about the same as the thickness T of the completed substrate 1.

次に、樹脂４が充填されていない空隙部５に他の樹脂を充填させる。他の樹脂は、溶剤等を用いて容易に溶解させることができるため、便宜上、溶解樹脂と称することがある。図７（ａ）に示すように、厚さ１００μmのベースフィルム１１上に、平面形状が２５０ｍｍ×２５０ｍｍの正方形であって厚さが３０μmの溶解樹脂層（例えばフォトレジスト層１４ａ）を形成して、２層構造のドライフィルム１５を形成する。ベースフィルム１１は、ＰＥＴ（ポリエチレンテレフタレート）やＰＰ（ポリプロピレン）などからなる一般的な樹脂フィルムである。フォトレジスト層１４ａは、粘度が０．５Ｐａ・ｓ程度の一般的なポジレジストからなる。ただし、フォトレジスト層１４ａに代えて、他の溶解樹脂からなる溶解樹脂層を形成することもできる。フォトレジスト層１４ａは市販のスピン塗布装置を用いて形成され、樹脂層４ａの膜厚はスピン塗布装置のフィルム回転数の調整によって制御される。 Next, the void portion 5 not filled with the resin 4 is filled with another resin. Since other resins can be easily dissolved using a solvent or the like, they may be referred to as dissolved resins for convenience. As shown in FIG. 7A, a dissolved resin layer (for example, a photoresist layer 14a) having a planar shape of 250 mm × 250 mm and a thickness of 30 μm is formed on a base film 11 having a thickness of 100 μm. A two-layer structure dry film 15 is formed. The base film 11 is a general resin film made of PET (polyethylene terephthalate), PP (polypropylene), or the like. The photoresist layer 14a is made of a general positive resist having a viscosity of about 0.5 Pa · s. However, instead of the photoresist layer 14a, a dissolved resin layer made of another dissolved resin can be formed. The photoresist layer 14a is formed by using a commercially available spin coating apparatus, and the film thickness of the resin layer 4a is controlled by adjusting the film rotation speed of the spin coating apparatus.

図７（ｂ）に示すように、板材１ａとドライフィルム１５を真空チャンバー１２内に挿入し、板材１ａの第１の面３とドライフィルム１０のフォトレジスト層１４ａの表面とが向かい合うように配置する。真空チャンバー１２内を圧力５０Ｐａになるまで真空引きし、ラミネート温度６０℃でドライフィルム１５を板材１ａにラミネートする。真空チャンバー１２を大気開放するか、または、ドライフィルム１５がラミネートされた板材１ａを真空チャンバー１２から取り出す。それにより、図７（ｃ）に示すように、空隙部５の負圧とドライフィルム１５の外側の大気圧との差圧で、フォトレジスト層１４ａを形成しているフォトレジスト１４の一部が空隙部５内に充填される。このように、真空引きと、ラミネート法、スピン塗布法またはスリットコーター法とを用いて、あるいは毛細管現象を利用して、空隙部５内にフォトレジスト１４を充填する。それから、図７（ｄ）に示すように、ベースフィルム１１を剥離してフォトレジスト層１４ａを露出させる。 As shown in FIG. 7B, the plate material 1a and the dry film 15 are inserted into the vacuum chamber 12 and arranged so that the first surface 3 of the plate material 1a and the surface of the photoresist layer 14a of the dry film 10 face each other. do. The inside of the vacuum chamber 12 is evacuated until the pressure reaches 50 Pa, and the dry film 15 is laminated on the plate material 1a at a laminating temperature of 60 ° C. The vacuum chamber 12 is opened to the atmosphere, or the plate material 1a on which the dry film 15 is laminated is taken out from the vacuum chamber 12. As a result, as shown in FIG. 7 (c), a part of the photoresist 14 forming the photoresist layer 14a is formed by the differential pressure between the negative pressure of the void portion 5 and the atmospheric pressure outside the dry film 15. The gap 5 is filled. As described above, the photoresist 14 is filled in the void portion 5 by using the vacuuming method, the laminating method, the spin coating method, the slit coater method, or by using the capillary phenomenon. Then, as shown in FIG. 7D, the base film 11 is peeled off to expose the photoresist layer 14a.

フォトレジスト層１４ａがラミネートされた板材１ａを、フォトレジスト用の一般的な剥離液に１０分程度浸漬する。それにより、図７（ｅ）に示すように、板材１ａの第１の面３にラミネートされたフォトレジスト層１４ａを溶解剥離する。この時、空隙部５内に浸入したフォトレジスト１４は除去されずに残り、有底穴２ａ内において樹脂４の上にフォトレジスト１４が積層された状態になる。図７（ｆ）に示すように、有底穴２ａ内に樹脂４とフォトレジスト１４が形成された板材１ａの第１の面３に研削用テープ（例えば市販のＵＶ硬化型バックグラインドテープ）１３を貼り付ける。図７（ｇ）に示すように、板材１ａの第２の面６を研削して、厚さＴ（例えば１５０μｍ）になるまで板材１ａを薄化する。この研削によって、板材１ａの有底穴２ａの底部分と、有底穴２ａ内の樹脂４とを除去して貫通孔２を形成する。ただし、貫通孔２内のフォトレジスト１４の少なくとも一部は除去されずに残る。それから、フォトレジスト１４用の一般的な剥離液に板材１ａを３０分程度浸漬し、図７（ｈ）に示すように、フォトレジスト１４を溶解剥離する。図７（ｉ）に示すように、研削用テープ１３に対してＵＶ照射を行い、検索用テープ１３を剥離することで、貫通孔２を有する厚さＴの基板１が製造される。このように、本実施例では、容易に除去できる溶解樹脂（例えばフォトレジスト１４）を、薄化した後の板材１ａの貫通孔２に残しておく。それにより、板材１ａを研削する際に貫通孔２の周辺の破損を抑えるとともに、研削粉が貫通孔２内に付着することを抑えることができる。 The plate material 1a on which the photoresist layer 14a is laminated is immersed in a general stripping solution for photoresist for about 10 minutes. As a result, as shown in FIG. 7 (e), the photoresist layer 14a laminated on the first surface 3 of the plate material 1a is melted and peeled off. At this time, the photoresist 14 that has penetrated into the void portion 5 remains without being removed, and the photoresist 14 is laminated on the resin 4 in the bottomed hole 2a. As shown in FIG. 7 (f), a grinding tape (for example, a commercially available UV curable backgrinding tape) 13 is formed on the first surface 3 of the plate material 1a in which the resin 4 and the photoresist 14 are formed in the bottomed hole 2a. Paste. As shown in FIG. 7 (g), the second surface 6 of the plate material 1a is ground to thin the plate material 1a until the thickness T (for example, 150 μm) is reached. By this grinding, the bottom portion of the bottomed hole 2a of the plate material 1a and the resin 4 in the bottomed hole 2a are removed to form the through hole 2. However, at least a part of the photoresist 14 in the through hole 2 remains without being removed. Then, the plate material 1a is immersed in a general stripping solution for the photoresist 14 for about 30 minutes, and the photoresist 14 is melted and stripped as shown in FIG. 7 (h). As shown in FIG. 7 (i), by irradiating the grinding tape 13 with UV and peeling off the search tape 13, a substrate 1 having a thickness T having a through hole 2 is manufactured. As described above, in this embodiment, the easily removable dissolved resin (for example, photoresist 14) is left in the through hole 2 of the thinned plate material 1a. As a result, it is possible to suppress damage to the periphery of the through hole 2 when grinding the plate material 1a, and to prevent grinding powder from adhering to the inside of the through hole 2.

［実施例４］
本発明の実施例４の基板１の製造方法について説明する。以下、実施例１〜３との相違点について主に説明し、実施例１〜３と同様な方法および構成については説明を省略する場合がある。
本実施例では、実施例２と同様に、例えばボッシュプロセスを行うエッチングによって、底部分に湾曲した先端部分（Ｒ形状部分）２ｂを有する有底穴２ａを形成し、実施例２と同様な効果を奏する。ただし、板材１ａの断面図である図８（ａ）と、そのＣ部分の拡大図である図８（ｂ）に示すように、板材１ａを、湾曲した先端部分２ｂの途中までしか研削せず、完成状態の基板１の貫通孔２の第２の面６側の端部が湾曲形状（Ｒ形状）の一部になっている。 [Example 4]
The method of manufacturing the substrate 1 of the fourth embodiment of the present invention will be described. Hereinafter, the differences from the first to third embodiments will be mainly described, and the description of the same method and configuration as those of the first to third embodiments may be omitted.
In this embodiment, as in Example 2, a bottomed hole 2a having a curved tip portion (R-shaped portion) 2b is formed in the bottom portion by etching, for example, by performing a Bosch process, and the same effect as in Example 2 is formed. Play. However, as shown in FIG. 8 (a) which is a cross-sectional view of the plate material 1a and FIG. 8 (b) which is an enlarged view of the C portion thereof, the plate material 1a is ground only to the middle of the curved tip portion 2b. The end of the through hole 2 of the completed substrate 1 on the second surface 6 side is a part of the curved shape (R shape).

具体的には、実施例２と同様に、板材１ａに、底部分が実質的に半球状である有底穴２ａを形成し、その有底穴２ａ内に樹脂４を充填する。有底穴２ａの深さｔ２は例えば１５３μｍである。それから、板材１ａの第１の面３にラミネートされた樹脂層４ａと有底穴２ａ内の樹脂４の一部を除去し、図９（ａ），９（ｂ）に示すように、有底穴２ａ内に空隙部５を形成する。その際に、空隙部５の深さｔ３が、完成状態の基板１の厚さＴと同程度になるように制御する。例えば、板材１ａを、一般的な有機溶剤の一例であるアセトンに６０分程度浸漬する。それにより、有底穴２ａの底部分の湾曲した先端部分２ｂの途中で樹脂４の溶解が停止するようにする。図９（ｂ）に、有底穴２ａ内の樹脂４の溶解が停止する線Ｂを示している。図９（ｃ），９（ｄ）に示すように、有底穴２ａの底部分の湾曲した先端部分２ｂの途中まで樹脂４が存在する板材１ａの第１の面３に、有底穴２ａの開口部を塞ぐように研削用テープ１３を貼り付ける。そして、図９（ｅ），９（ｆ）に示すように、板材１ａの第２の面６側から研削を行い、図９（ｄ）の線Ａの位置で研削を停止する。この研削停止線Ａは、有底穴２ａの底部分の湾曲した先端部分２ｂの途中に位置し、溶解停止線Ｂと一致していてよい。図８（ａ）に示すように板材１ａを研削した後に研削用テープ１３を剥離して完成した基板１の貫通孔２は、図８（ｃ）に拡大して示すＤ部分である第１の面３側の開口部２ｃの径よりも、図８（ｂ）に示す第２の面６側の開口径が小さい。 Specifically, as in the second embodiment, the plate material 1a is formed with a bottomed hole 2a having a substantially hemispherical bottom portion, and the bottomed hole 2a is filled with the resin 4. The depth t2 of the bottomed hole 2a is, for example, 153 μm. Then, a part of the resin layer 4a laminated on the first surface 3 of the plate material 1a and the resin 4 in the bottomed hole 2a is removed, and as shown in FIGS. 9 (a) and 9 (b), the bottomed surface is formed. A gap 5 is formed in the hole 2a. At that time, the depth t3 of the gap portion 5 is controlled to be about the same as the thickness T of the completed substrate 1. For example, the plate material 1a is immersed in acetone, which is an example of a general organic solvent, for about 60 minutes. As a result, the dissolution of the resin 4 is stopped in the middle of the curved tip portion 2b of the bottom portion of the bottom portion of the bottomed hole 2a. FIG. 9B shows a line B at which the dissolution of the resin 4 in the bottomed hole 2a is stopped. As shown in FIGS. 9 (c) and 9 (d), the bottomed hole 2a is formed on the first surface 3 of the plate material 1a in which the resin 4 is present halfway through the curved tip portion 2b of the bottom portion of the bottomed hole 2a. The grinding tape 13 is attached so as to close the opening of the above. Then, as shown in FIGS. 9 (e) and 9 (f), grinding is performed from the second surface 6 side of the plate material 1a, and grinding is stopped at the position of line A in FIG. 9 (d). The grinding stop line A may be located in the middle of the curved tip portion 2b of the bottom portion of the bottom portion of the bottomed hole 2a and may coincide with the melting stop line B. As shown in FIG. 8 (a), the through hole 2 of the substrate 1 completed by peeling off the grinding tape 13 after grinding the plate material 1a is the first portion D which is enlarged and shown in FIG. 8 (c). The opening diameter on the second surface 6 side shown in FIG. 8B is smaller than the diameter of the opening 2c on the surface 3 side.

このように、本実施例では、有底穴２ａの底部分の湾曲した先端部分２ｂの途中で研削を停止することにより、両開口端の開口径および開口面積が異なる貫通孔２を有する基板１を製造することができる。この基板１は、例えば液体吐出ヘッドなど、貫通孔２を通る流体の流量変化の制御が必要なデバイスに好適に用いられる。有底穴２ａ内に形成される樹脂４が、板材１ａを研削する際に研削停止線Ａとほぼ同じ位置まで残されていると、湾曲した先端部分２ｂの途中で研削を停止する際に板材１ａの破損を生じるおそれを小さく抑えられる。 As described above, in this embodiment, the substrate 1 having through holes 2 having different opening diameters and opening areas at both open ends by stopping grinding in the middle of the curved tip portion 2b of the bottom portion of the bottom hole 2a. Can be manufactured. This substrate 1 is suitably used for a device that needs to control a change in the flow rate of a fluid passing through a through hole 2, such as a liquid discharge head. If the resin 4 formed in the bottomed hole 2a is left at almost the same position as the grinding stop line A when grinding the plate material 1a, the plate material is used when grinding is stopped in the middle of the curved tip portion 2b. The risk of damage to 1a can be kept small.

［実施例５］
本発明の実施例５の基板１の製造方法について説明する。以下、実施例１〜４との相違点について主に説明し、実施例１〜４と同様な方法および構成については説明を省略する場合がある。
本実施例では、板材１ａに対して異方性ウェットエッチングを行うことによって有底穴２ａを形成する。図１０（ａ）に示すように、有底穴２ａの開口形状は２１２μｍ×２１２μｍの正方形であって、開口部から底部分に向かって先細の形状である。有底穴２ａの深さｔ２は１５０μmである。実施例１の各工程と実質的に同様に、有底穴２ａを有する板材１ａに、図１０（ｂ）に示す２層構造のドライフィルム１０を重ね合わせる。そして、図１０（ｃ）〜１０（ｄ）に示すように、真空引きと、ラミネート法、スピン塗布法またはスリットコーター法とを用いて、あるいは毛細管現象を利用して、有底穴２ａ内に樹脂４を充填する。図１０（ｅ）に示すように、ベースフィルム１１を剥離して樹脂層４ａを露出させる。この板材１ａを有機溶剤に浸漬して、板材１ａの第１の面３にラミネートされた樹脂層４ａと有底穴２ａ内の樹脂４の一部を除去し、図１０（ｆ）に示すように、有底穴２ａ内に空隙部５を形成する。図１０（ｇ）に示すように、板材１ａの第１の面３に研削用テープ１３を貼り付け、図１０（ｈ）に示すように板材１ａの第２の面６側から研削を行う。その後に研削用テープ１３を剥離して、図１０（ｉ）に示す貫通孔２を有する基板１を完成させる。 [Example 5]
The method of manufacturing the substrate 1 of the fifth embodiment of the present invention will be described. Hereinafter, the differences from the first to fourth embodiments will be mainly described, and the description of the same method and configuration as those of the first to fourth embodiments may be omitted.
In this embodiment, the bottomed hole 2a is formed by performing anisotropic wet etching on the plate material 1a. As shown in FIG. 10A, the opening shape of the bottomed hole 2a is a square of 212 μm × 212 μm, and is tapered from the opening toward the bottom portion. The depth t2 of the bottomed hole 2a is 150 μm. Substantially in the same manner as in each step of the first embodiment, the two-layer structure dry film 10 shown in FIG. 10B is superposed on the plate material 1a having the bottomed hole 2a. Then, as shown in FIGS. 10 (c) to 10 (d), the bottomed hole 2a is evacuated by using the laminating method, the spin coating method or the slit coater method, or by using the capillary phenomenon. Fill with resin 4. As shown in FIG. 10 (e), the base film 11 is peeled off to expose the resin layer 4a. The plate material 1a is immersed in an organic solvent to remove a part of the resin layer 4a laminated on the first surface 3 of the plate material 1a and the resin 4 in the bottomed hole 2a, as shown in FIG. 10 (f). In addition, a gap portion 5 is formed in the bottomed hole 2a. As shown in FIG. 10 (g), the grinding tape 13 is attached to the first surface 3 of the plate material 1a, and grinding is performed from the second surface 6 side of the plate material 1a as shown in FIG. 10 (h). After that, the grinding tape 13 is peeled off to complete the substrate 1 having the through hole 2 shown in FIG. 10 (i).

本実施例では、異方性ウェットエッチングにより、開口部から底部分に向かって先細の形状の有底穴２ａを形成する。従って、実施例４と同様に、両開口端の開口面積が異なる貫通孔２を有する基板１を製造することができ、実施例４と同様な効果が得られる。また、有底穴２ａの深さｔ２と完成状態の基板の厚さＴとを同程度にして、有底穴２ａの形成工程の作業効率を向上させることができる。さらに、板材１ａの研削による薄化を行った後に、フォトリソグラフィ工程を行う必要がなく、基板１の割れ等の破損を生じるリスクが低減し、信頼性が向上する。 In this embodiment, anisotropic wet etching is used to form a bottomed hole 2a having a tapered shape from the opening toward the bottom portion. Therefore, similarly to the fourth embodiment, the substrate 1 having the through holes 2 having different opening areas at both open ends can be manufactured, and the same effect as that of the fourth embodiment can be obtained. Further, the depth t2 of the bottomed hole 2a and the thickness T of the completed substrate can be made equal to each other to improve the work efficiency of the bottomed hole 2a forming process. Further, it is not necessary to perform a photolithography step after the plate material 1a is thinned by grinding, the risk of damage such as cracking of the substrate 1 is reduced, and the reliability is improved.

［液体吐出ヘッドの製造方法］
次に、本発明に係る液体吐出ヘッドの製造方法について説明する。
図１１（ａ）に示すように、液体を吐出するためのエネルギーを発生するエネルギー発生素子９が一方の面に形成された基板（第１の基板）１を用意する。基板１は、エネルギー発生素子９の両側に、液体の供給口となる貫通孔２を有する。この貫通孔２を有する基板１は、前述した本発明の実施例１〜５等と同様な方法により形成されたものである。簡略化して説明すると、図１１（ｂ）に示すように、例えば板材１ａに対してＳＦ６とＣ４Ｆ８を交互に用いるボッシュプロセスによって有底穴２ａを形成する。有底穴２ａ内に樹脂４を形成した後に、第２の面６から研削する。さらに、研削時に生じた破砕層を除去するために、ＣＭＰ（化学機械研磨）を行い、図１１（ｃ）に示す貫通孔２を有する厚さ２００μｍの基板１を製造する。 [Manufacturing method of liquid discharge head]
Next, a method for manufacturing the liquid discharge head according to the present invention will be described.
As shown in FIG. 11A, a substrate (first substrate) 1 in which an energy generating element 9 for generating energy for discharging a liquid is formed on one surface is prepared. The substrate 1 has through holes 2 serving as liquid supply ports on both sides of the energy generating element 9. The substrate 1 having the through holes 2 is formed by the same method as in Examples 1 to 5 of the present invention described above. Briefly, as shown in FIG. 11 (b), a bottomed hole 2a is formed by , for example, a Bosch process in which SF 6 and C 4 F 8 are alternately used for a plate material 1a. After forming the resin 4 in the bottomed hole 2a, grinding is performed from the second surface 6. Further, in order to remove the crushed layer generated during grinding, CMP (chemical mechanical polishing) is performed to manufacture a substrate 1 having a thickness of 200 μm and having a through hole 2 shown in FIG. 11 (c).

一方、表面に２．０μｍの熱酸化シリコン酸化膜１６が形成された厚さ４００μｍのシリコン製の支持部材（第２の基板）１７を用意する。基板１の接合面と、支持部材１７の熱酸化シリコン酸化膜１６の接合面とを、Ｎ２プラズマによって活性化する。アライナー装置で基板１と支持部材１７とを位置合わせし、接合装置を用いて、図１１（ｄ）に示すように、熱酸化シリコン酸化膜１６を介して基板１と支持部材１７とをフュージョン接合する。 On the other hand, a silicon support member (second substrate) 17 having a thickness of 400 μm having a 2.0 μm thermal silicon oxide oxide film 16 formed on the surface is prepared. And bonding surface of the substrate 1, and a bonding surface of the thermally oxidized silicon oxide film 16 of the support member 17, activated by N 2 plasma. The substrate 1 and the support member 17 are aligned by the aligner device, and the substrate 1 and the support member 17 are fused and joined via the thermal silicon oxide oxide film 16 by using the joining device as shown in FIG. 11 (d). do.

次に、支持部材１７の、基板１との接合面とは反対の表面に、ＳＦ６とＣ４Ｆ８を交互に用いるボッシュプロセスによるドライエッチングを行って、図１１（ｅ）に示すように、共通液室１８を形成する。共通液室１８の底部には、熱酸化シリコン酸化膜１６の一部が露出している。共通液室１８の底部に露出している熱酸化シリコン酸化膜１６にＣＨＦ３とＣＦ４とＡｒの混合ガスによるエッチングを行って、熱酸化シリコン酸化膜１６を除去し、共通液室１８の底部に基板１を露出させる。それにより、図１１（ｆ）に示すように、基板１の貫通孔２と共通液室１８とを連通させる。次いで、図１１（ｇ）に示すように、基板１の、支持部材１７との接合面と反対側の面に、吐出口１９を有する吐出口形成部材２０を積層する。こうして、本発明に係る貫通孔２を有する基板１を含む液体吐出ヘッドを製造する。 Next, the surface of the support member 17 opposite to the joint surface with the substrate 1 is dry-etched by a Bosch process using SF 6 and C 4 F 8 alternately, as shown in FIG. 11 (e). , A common liquid chamber 18 is formed. A part of the thermal silicon oxide oxide film 16 is exposed at the bottom of the common liquid chamber 18. The thermal silicon oxide film 16 exposed at the bottom of the common liquid chamber 18 is etched with a mixed gas of CHF 3 , CF 4 and Ar to remove the thermal silicon oxide oxide film 16 and the bottom of the common liquid chamber 18 is removed. The substrate 1 is exposed to the surface. As a result, as shown in FIG. 11 (f), the through hole 2 of the substrate 1 and the common liquid chamber 18 are communicated with each other. Next, as shown in FIG. 11 (g), the discharge port forming member 20 having the discharge port 19 is laminated on the surface of the substrate 1 opposite to the joint surface with the support member 17. In this way, the liquid discharge head including the substrate 1 having the through hole 2 according to the present invention is manufactured.

１ 基板
１ａ 板材
２ 貫通孔
２ａ 有底穴
３ 一方の面（第１の面）
４ 樹脂
５ 空隙部
６ 他方の面（図２の面） 1 Substrate 1a Plate material 2 Through hole 2a Bottomed hole 3 One side (first side)
4 Resin 5 Void 6 The other surface (the surface in FIG. 2)

Claims (12)

板材に、当該板材の一方の面に開口して他方の面側に底部分を有する有底穴を形成することと、
前記有底穴内の一部に樹脂を形成するとともに、残部に、前記樹脂が充填されていない空隙部を設けることと、
前記板材を研削し、前記底部分と前記有底穴内の前記樹脂とを除去しつつ前記板材を薄化することと、を含み、
前記樹脂は、前記有底穴内の前記他方の面側に形成され、前記空隙部は、前記有底穴内の前記樹脂よりも前記一方の面側に設けられ、
前記板材の研削を前記板材の前記他方の面側から行い、前記底部分と前記樹脂を除去するとともに、前記空隙部からなる貫通孔を形成することを特徴とする、基板の製造方法。 To form a bottomed hole in the plate material that opens on one surface of the plate material and has a bottom portion on the other surface side.
A resin is formed in a part of the bottomed hole, and a gap portion not filled with the resin is provided in the rest.
It includes grinding the plate material and thinning the plate material while removing the bottom portion and the resin in the bottomed hole.
The resin is formed on the other side of the bottomed hole, and the gap is provided on one side of the bottomed hole with respect to the resin.
A method for manufacturing a substrate, which comprises grinding the plate material from the other surface side of the plate material, removing the bottom portion and the resin, and forming a through hole composed of the void portion. 前記板材の研削前の、前記板材の厚さと前記有底穴の深さは、完成状態の前記基板の厚さよりも大きい、請求項１に記載の基板の製造方法。 The method for manufacturing a substrate according to claim 1, wherein the thickness of the plate material and the depth of the bottomed hole before grinding the plate material are larger than the thickness of the substrate in a completed state. 前記空隙部の深さと完成状態の前記基板の厚さとの差が±１０μｍ以下である、請求項１または２に記載の基板の製造方法。 The method for manufacturing a substrate according to claim 1 or 2, wherein the difference between the depth of the gap and the thickness of the substrate in a completed state is ± 10 μm or less. 前記空隙部の深さは、完成状態の前記基板の厚さと一致する、請求項３に記載の基板の製造方法。 The method for manufacturing a substrate according to claim 3, wherein the depth of the gap portion matches the thickness of the substrate in a completed state. 前記空隙部を設けた後に前記有底穴の内部に残った前記樹脂を硬化させ、その後に前記板材の研削を行う、請求項１から４のいずれか１項に記載の基板の製造方法。 The method for manufacturing a substrate according to any one of claims 1 to 4, wherein the resin remaining inside the bottomed hole is cured after the gap is provided, and then the plate material is ground. 前記樹脂が充填されていない前記空隙部に他の樹脂を充填させ、前記板材を研削した後に前記他の樹脂を除去する、請求項１から５のいずれか１項に記載の基板の製造方法。 The method for manufacturing a substrate according to any one of claims 1 to 5, wherein the voids not filled with the resin are filled with another resin, the plate material is ground, and then the other resin is removed. 前記有底穴の前記底部分の先端部分が湾曲している、請求項１から６のいずれか１項に記載の基板の製造方法。 The method for manufacturing a substrate according to any one of claims 1 to 6, wherein the tip portion of the bottom portion of the bottomed hole is curved. 前記有底穴の前記底部分の少なくとも湾曲した前記先端部分を前記樹脂で覆う、請求項７に記載の基板の製造方法。 The method for manufacturing a substrate according to claim 7, wherein at least the curved tip portion of the bottom portion of the bottomed hole is covered with the resin. 前記底部分の湾曲した前記先端部分の途中まで前記樹脂で覆い、前記板材を、前記先端部分の途中まで研削して、湾曲した前記先端部分の一部によって前記貫通孔の一部を構成する、請求項７に記載の基板の製造方法。 The resin covers the curved tip portion of the bottom portion halfway, and the plate material is ground to the middle of the tip portion, and a part of the curved tip portion constitutes a part of the through hole. The method for manufacturing a substrate according to claim 7. 開口部から前記底部分に向かって先細の形状の前記有底穴を形成する、請求項１から９のいずれか１項に記載の基板の製造方法。 The method for manufacturing a substrate according to any one of claims 1 to 9, wherein the bottomed hole having a tapered shape is formed from the opening toward the bottom portion. 前記貫通孔の両開口端の開口面積が異なる、請求項９または１０に記載の基板の製造方法。 The method for manufacturing a substrate according to claim 9 or 10, wherein the opening areas of both open ends of the through holes are different. 請求項１から１１のいずれか１項に記載の基板の製造方法によって製造された前記基板と、支持部材とを接合し、
前記支持部材に共通液室を形成し、前記基板の前記貫通孔と前記共通液室とを連通させ、
前記基板の、前記支持部材との接合面と反対側の面に、吐出口を有する吐出口形成部材を積層することを特徴とする、液体吐出ヘッドの製造方法。 The substrate manufactured by the method for manufacturing a substrate according to any one of claims 1 to 11 is joined to the support member.
A common liquid chamber is formed in the support member, and the through hole of the substrate and the common liquid chamber are communicated with each other.
A method for manufacturing a liquid discharge head, which comprises laminating a discharge port forming member having a discharge port on a surface of the substrate opposite to a joint surface with the support member.
JP2020106316A 2020-06-19 2020-06-19 Substrate and manufacturing method for liquid ejection head Pending JP2022001410A (en)

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