JP2021522558A - ライトフィールドディスプレイにおける発光素子のための構造 - Google Patents
ライトフィールドディスプレイにおける発光素子のための構造 Download PDFInfo
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- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 2
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (38)
- ライトフィールドディスプレイであって、
複数の画素を備え、各画素は、それぞれの光誘導光学素子を有し、さらに同一の半導体基板上に一体的に構成された複数の発光素子の配列を含み、
各画素内の前記複数の発光素子を個別に駆動するように構成された電子的手段を備えている、ライトフィールドディスプレイ。 - 前記光誘導光学素子は、前記各画素の複数の発光素子の前記配列に対して整列され、結合されている、請求項1に記載のライトフィールドディスプレイ。
- 前記光誘導光学素子は、少なくとも1つのマイクロレンズ、少なくとも1つの回折格子、または両方の組み合わせを含む、請求項1に記載のライトフィールドディスプレイ。
- 各画素内の複数の発光素子の前記配列は、前記ライトフィールドディスプレイが特定の色域を提供することを可能にする光を生成する複数の発光素子を含む、請求項1に記載のライトフィールドディスプレイ。
- 各画素内の複数の発光素子の前記配列は、少なくとも3つの異なる色の光を生成する複数の発光素子を含む、請求項1に記載のライトフィールドディスプレイ。
- 少なくとも3つの異なる色の光を生成する前記複数の発光素子は、赤色光を生成する発光素子、緑色光を生成する発光素子、および青色光を生成する発光素子を含む、請求項5に記載のライトフィールドディスプレイ。
- 前記配列内の各発光素子は、発光ダイオード(LED)である、請求項1に記載のライトフィールドディスプレイ。
- 前記LEDは、無機LEDである、請求項7に記載のライトフィールドディスプレイ。
- 前記配列内の前記複数の発光素子は、赤色光を生成するLEDの第1のセット、緑色光を生成するLEDの第2のセット、および青色光を生成するLEDの第3のセットを含む、請求項1に記載のライトフィールドディスプレイ。
- LEDの前記第1のセットは、Inの第1の組成を有するInGaNの少なくとも一部から作製されたLEDを含み、
LEDの前記第2のセットは、Inの前記第1の組成とは異なるInの第2の組成を有するInGaNの少なくとも一部から作製されたLEDを含み、
LEDの前記第3のセットは、Inの前記第1の組成および前記第2の組成とは異なる、Inの第3の組成を有するInGaNの少なくとも一部から作製されたLEDを含む、請求項9に記載のライトフィールドディスプレイ。 - 前記配列内の前記複数の発光素子のそれぞれは、青色光を生成し、
前記複数の発光素子の第1のセットは、青色光を提供するように構成されており、
前記複数の発光素子の第2のセットは、前記青色光をダウンコンバートして緑色光を生成および提供するように構成されており、
前記複数の発光素子の第3のセットは、前記青色光をダウンコンバートして赤色光を生成および提供するように構成されている、請求項1に記載のライトフィールドディスプレイ。 - 前記半導体基板は、1つまたは複数のGaN、GaAs、Al2O3、Si、SiC、Ga2O3、それらの合金、またはそれらの誘導体を含む、請求項1に記載のライトフィールドディスプレイ。
- 前記配列内の前記複数の発光素子のそれぞれは、少なくとも部分的に、AlN、GaN、InN、AlAs、GaAs、InAs、AlP、GaP、InP、それらの合金、またはそれらの誘導体うちの1つまたは複数から作製されている、請求項1に記載のライトフィールドディスプレイ。
- 前記配列内の前記複数の発光素子のそれぞれは、量子井戸活性領域を含む、請求項13に記載のライトフィールドディスプレイ。
- 前記配列内の前記複数の発光素子のそれぞれは、それぞれの色変換媒体を含む、請求項13に記載のライトフィールドディスプレイ。
- 各画素内の複数の発光素子の前記配列は、2つ以上の画素の隣接する配置を可能にする幾何学的配置を有する、請求項1に記載のライトフィールドディスプレイ。
- 前記幾何学的配置は、六角形、正方形、または長方形のいずれかである、請求項16に記載のライトフィールドディスプレイ。
- 複数の発光素子の別々のグループは、前記配列内の前記複数の発光素子から構成され、
複数の発光素子の各グループは、空間方向性を有する光出力を生成する、請求項1に記載のライトフィールドディスプレイ。 - 複数の発光素子の各グループの前記光出力は、前記グループ内の前記個々の発光素子によって生成された成分を含む、請求項18に記載のライトフィールドディスプレイ。
- 前記光出力の前記成分のそれぞれは異なる色の光に対応する、請求項19に記載のライトフィールドディスプレイ。
- 複数の発光素子の別々のグループは、前記配列内の前記複数の発光素子から構成され、
前記ライトフィールドディスプレイの指向性解像度は、前記別々のグループの数に基づいている、請求項1に記載のライトフィールドディスプレイ。 - 複数の発光素子の各グループは、少なくとも3つの異なる色の光を生成する複数の発光素子を含む、請求項21に記載のライトフィールドディスプレイ。
- 少なくとも3つの異なる色の光を生成する発光素子の各グループの前記発光素子は、赤色光を生成する発光素子、緑色光を生成する発光素子、および青色光を生成する発光素子を含む、請求項22に記載のライトフィールドディスプレイ。
- 少なくとも3つの異なる色の光を生成する各グループ内の前記複数の発光素子は、赤色光を生成する2つの発光素子、緑色光を生成する1つの発光素子、および青色光を生成する1つの発光素子を含む、請求項22に記載のライトフィールドディスプレイ。
- 少なくとも3つの異なる色の光を生成する各グループ内の前記複数の発光素子は、赤色光を生成する1つの発光素子、緑色光を生成する1つの発光素子、青色光を生成する1つの発光素子、および白色光を生成する1つの発光素子を含む、請求項22に記載のライトフィールドディスプレイ。
- 前記画素内の複数の発光素子の前記配列のサイズは、約10ミクロンから約1,000ミクロンの間である、請求項1に記載のライトフィールドディスプレイ。
- 前記配列内の複数の発光素子の各グループのサイズは、約1ミクロンから約10ミクロンの間である、請求項1に記載のライトフィールドディスプレイ。
- 前記配列内の各発光素子のサイズは、約0.4ミクロンから約4ミクロンの間である、請求項1に記載のライトフィールドディスプレイ。
- 前記配列内の各発光素子のサイズは、約1ミクロン未満である、請求項1に記載のライトフィールドディスプレイ。
- 前記光誘導光学素子のサイズは、約10ミクロンから約1,000ミクロンの間である、請求項1に記載のライトフィールドディスプレイ。
- 複数の発光素子の前記配列のサイズは、画素間のピッチのサイズよりも小さい、請求項1に記載のライトフィールドディスプレイ。
- 前記複数の画素は、第1の層の上に構成され、
前記電子的手段は、第2の層の上に構成され、
前記第1の層は、前記第2の層の上に配置され、かつ前記第2の層と一体化されている、請求項1に記載のライトフィールドディスプレイ。 - 前記複数の画素は格子状のパターンで配置され、
隣接する画素間のピッチは、隣接する画素内の光誘導光学素子間のピッチに対応している、請求項1に記載のライトフィールドディスプレイ。 - 前記格子状のパターンは、画素のN×Mの配列であり、N>100およびM>100である、請求項33に記載のライトフィールドディスプレイ。
- N>1000およびM>1000である、請求項34に記載のライトフィールドディスプレイ。
- 前記電子的手段は、複数の駆動回路を含み、前記複数の駆動回路は、前記配列内の前記複数の発光素子のそれぞれを個別に駆動するように構成されている、請求項1に記載のライトフィールドディスプレイ。
- 各画素において、前記光誘導光学素子の位置と複数の発光素子の前記配列の位置との間のオフセットは、前記ライトフィールドディスプレイ内の前記画素の位置に基づいている、請求項1に記載のライトフィールドディスプレイ。
- 前記複数の画素は、半導体基板上に一体的に構成されている、請求項1に記載のライトフィールドディスプレイ。
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