JP2021513603A - ナノ構造薄膜材料及びその製造方法並びにその使用方法 - Google Patents
ナノ構造薄膜材料及びその製造方法並びにその使用方法 Download PDFInfo
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- JP2021513603A JP2021513603A JP2020542571A JP2020542571A JP2021513603A JP 2021513603 A JP2021513603 A JP 2021513603A JP 2020542571 A JP2020542571 A JP 2020542571A JP 2020542571 A JP2020542571 A JP 2020542571A JP 2021513603 A JP2021513603 A JP 2021513603A
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- Prior art keywords
- thin film
- nanoporous
- plasmon
- substrate
- silver
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- H01L31/02—Details
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- H—ELECTRICITY
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- H—ELECTRICITY
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Abstract
Description
[0065]上述のように、本実施形態によるナノ構造薄膜の多孔性および光学特性は、AgおよびSb2S3ターゲットのスパッタ堆積速度を変えることによって容易に制御することができる。さらに、本実施形態によれば、表面プラズモンポラリトン(SPP)の伝播は、Ag−Sb2S3ナノ多孔質膜内に支持することができる。SPPで増強されたグースハイエンチェン(GH)シフトを測定することにより、本実施形態のAg−Sb2S3ナノ多孔質プラズモンバイオセンサは、それらの表面形状のフラクタルの性質により、フェムトモル濃度でストレプトアビジン(分子量、52.8kDa)生体分子を検出できるということを実証できる。
[実施例2]
[0086]バイオセンシング用ナノ多孔質薄膜に加えて、本実施形態のリソグラフィ・フリー法は、広帯域、偏光非依存性、および無指向性吸収を示すウエハスケールの自己組織化Ag−Sb2S3ナノ多孔質構造を製造する。強い吸収特性をテストするために、本実施形態のAg−Sb2S3ナノ多孔質アレイをポリイミドフィルムの25μm厚膜上ばかりでなく剛性のあるSiおよびSiO2基板上にもそれぞれ堆積させ、(太陽エネルギのほとんどが集中するスペクトル領域)300〜2400nmのスペクトル範囲にわたって高い吸収を維持する機械的に柔軟な構造を形成した。有限差分時間領域(FDTD)法に基づく理論モデルは、強い吸収の基礎となる物理学を理解するため、および構造が吸収スペクトルにどのように影響するかを調べるために開発されたものである。本実施形態に従ってAg−Sb2S3膜の測定された誘電率の実数部は、可視および近赤外(VIS−NIR)領域にわたって負であることが分かり、それにより本実施形態のAg−Sb2S3膜がその高い吸収に寄与するプラズモン応答を提供できるということが判明した。
Ag−Sb2S3ナノ多孔性構造を持つ吸収体は、スケーラブルで安価であり、スパッタリングまたは他の堆積方法により、多様な基板上に室温で堆積させることができる。本明細書に提示されるそのような光と物質の相互作用は、太陽光発電およびバイオセンシングで採用することができる。
Claims (27)
- 自己組織化されたナノ構造薄膜を製造する方法において、
低圧チャンバ内に基板を供給し、
前記基板上に、自己組織化ナノ構造薄膜を形成するために、プラズモニックカルコゲナイド材料を堆積させ、
プラズモン材料とカルコゲナイド材料との比を3:2より大きくし、かつ前記低圧チャンバの圧力を大気圧より低くすることを特徴とする自己組織化ナノ構造薄膜の製造方法。 - 前記堆積工程では、自己組織化ナノ構造薄膜の前記プラズモン材料および前記カルコゲナイド材料の組成を制御し、前記プラズモン材料の原子濃度を40%〜95%の範囲とすることを特徴とする請求項1に記載の方法。
- 前記堆積工程では、室温で単一のプラズモニックカルコゲニドターゲットから前記プラズモン材料および前記カルコゲニド材料を堆積させることを含むことを特徴とする請求項1または2のいずれか1項に記載の方法。
- 前記堆積工程では、室温で複数のターゲットまたは単一の合金ターゲットから前記プラズモン材料および前記カルコゲナイド材料を堆積させることを含むことを特徴とする請求項1または2のいずれか1項に記載の方法。
- 前記堆積工程での堆積速度を1〜5Å/秒の範囲とすることを特徴とする請求項1または2のいずれか1項に記載の方法。
- 前記堆積工程での堆積速度を1.5〜3.5Å/秒の範囲とすることを特徴とする請求項5に記載の方法。
- 前記堆積工程での堆積速度を1.5〜2.5Å/秒の範囲とすることを特徴とする請求項6に記載の方法。
- 前記複数のターゲットのうちの1つ以上が前記プラズモン材料を含み、前記複数のターゲットの1つ以上からの前記プラズモン材料の堆積速度を1〜5Å/秒の範囲とすることを特徴とする請求項4に記載の方法。
- 前記堆積速度を1.5〜3.5Å/秒の範囲とすることを特徴とする請求項8に記載の方法。
- 前記堆積速度を1.5〜2.5Å/秒の範囲とすることを特徴とする請求項9に記載の方法。
- 前記堆積工程では、前記プラズモニックカルコゲナイド材料を0.1〜1.0Paの範囲のスパッタリング圧力でスパッタリングすることを含むことを特徴とする請求項1乃至3または請求項5乃至7のいずれか1項に記載の方法。
- 前記堆積工程では、前記プラズモニックカルコゲナイド材料を0.2〜0.5Paの範囲のスパッタリング圧力でスパッタリングすることを含むことを特徴とする請求項11に記載の方法。
- 前記堆積工程では、300秒より長く、かつ、その中に三次元構造を画定するのに十分に厚い前記自己組織化ナノ構造薄膜の厚さを画定するのに十分な時間で堆積させることを含むことを特徴とする請求項1乃至12のいずれか1項に記載の方法。
- 前記堆積工程では、900〜3600秒の時間のスパッタリングを含むことを特徴とする請求項13に記載の方法。
- 前記プラズモン材料は、銀、銅、金、プラチナ、およびアルミニウムを含む群から選択される金属、または、チタンまたはジルコニウムを含む群から選択される金属を含む金属窒化物、または、インジウムスズ酸化物、アルミニウム亜鉛酸化物、およびガリウム亜鉛酸化物を含む群から選択される透明導電性酸化物、を含むことを特徴とする請求項1乃至14のいずれか1項に記載の方法。
- 前記カルコゲナイド材料は、三硫化アンチモン、三セレン化アンチモン、三硫化ビスマス、三セレン化ビスマス、または二硫化ゲルマニウムを含む群から選択されるカルコゲナイド材料を含むことを特徴とする請求項1乃至15のいずれか1項に記載の方法。
- 前記基板を供給する工程では、フレキシブル基板を供給することを含むことを特徴とする請求項1乃至16のいずれか1項に記載の方法。
- 前記フレキシブル基板を供給する工程では、プラスチック、ポリエチレンテレフタレート(PET)およびポリチオフェン(P3HT)を含む群から選択される材料を含むフレキシブル基板を供給することを含むことを特徴とする請求項17に記載の方法。
- 前記堆積工程では、前記基板上に10cm2以上の面積、より好ましくは80cm2より大きい面積を有する自己組織化ナノ構造薄膜を形成するために、前記プラズモン材料および前記カルコゲナイド材料を堆積させることを含むことを特徴とする請求項1乃至18のいずれか1項に記載の方法。
- 前記堆積工程では、第1の堆積速度で前記プラズモン材料をスパッタリングするとともに、第2の堆積速度で前記カルコゲナイド材料を同時にスパッタリングし、前記自己組織化ナノ構造薄膜を形成することを含み、前記第1の堆積速度と前記第2の堆積速度との比が3:2より大きいことを特徴とする請求項1乃至19のいずれか1項に記載の方法。
- 基板上のプラズモニックカルコゲナイド材料であって、前記プラズモニックカルコゲナイド材料は87%〜95%の範囲のプラズモン材料の原子濃度を有し、
前記プラズモン材料は、銀、銅、金、白金およびアルミニウムを含む群から選択される金属、または、チタンおよびジルコニウムを含む群から選択される金属を含む金属窒化物、または、インジウムスズ酸化物、アルミニウム亜鉛酸化物、およびガリウム亜鉛酸化物を含む群から選択される透明導電性酸化物を含み、
前記プラズモニックカルコゲナイド材料中のカルコゲナイド材料は、三硫化アンチモン三セレン化アンチモン、三硫化ビスマス、三セレン化ビスマス、または二硫化ゲルマニウムを含む群から選択されるカルコゲナイド材料を含むことを特徴とするナノ多孔質薄膜。 - 前記基板がフレキシブル基板であることを特徴とする請求項21に記載の薄膜。
- 請求項21に記載のナノ多孔質薄膜の細孔内に生体材料を捕捉することによるバイオセンシングに用いられることを特徴とするナノ多孔質薄膜の使用方法。
- 基板上のプラズモニックカルコゲナイド材料におけるナノ構造のナノワイヤフォレストを含む薄膜であって、
前記プラズモニックカルコゲナイド材料中のプラズモン材料の原子濃度が40%〜87%の範囲にあり、
前記プラズモン材料が銀、銅、金、プラチナおよびアルミニウムを含む群から選択される金属を含む薄膜チタンおよびジルコニウムを含む群から選択される金属を含む金属窒化物、またはインジウムスズ酸化物、アルミニウム亜鉛酸化物、およびガリウム亜鉛酸化物を含む群から選択される透明導電性酸化物であり、
前記プラズモニックカルコゲナイド材料中のカルコゲナイド材料は、三硫化アンチモン、三セレン化アンチモン、三硫化ビスマス、三セレン化ビスマス、または二硫化ゲルマニウムを含む群から選択されるカルコゲナイド材料を有することを特徴とする薄膜。 - 前記基板がフレキシブル基板であることを特徴とする請求項24に記載の薄膜。
- 前記ナノ構造の前記ナノワイヤフォレストの各ナノ構造は、ナノ構造のベースの反対側の端部にプラズモン共鳴用の銀からなるチップを含むことを特徴とする請求項24に記載の薄膜。
- 請求項24乃至26のいずれか1項に記載のナノ構造薄膜を使用する方法であって、可視から赤外の範囲までの光を閉じ込めてそこからエネルギを収集することを特徴とするナノ構造薄膜の使用方法。
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