JP2021197400A - Element transfer member, method for manufacturing element transfer member and method for manufacturing semiconductor device - Google Patents

Abstract

To provide an element transfer member that can improve the yield of transference of a semiconductor chip without contaminating the semiconductor chip.SOLUTION: The element transfer member has a base material having a plurality of first through holes penetrating in the thickness direction, and a continuous or discontinuous resin layer disposed on the base material and having a plurality of second through holes connecting with each of the plurality of first through holes.SELECTED DRAWING: Figure 1

Description

The present invention relates to a device transfer member, a method for manufacturing a device transfer member, and a method for manufacturing a semiconductor device.

The LED display is manufactured through a step of arranging and mounting an LED chip diced on a wafer substrate at a predetermined position on a mount substrate (wiring substrate).

As a method of mounting the LED chip on the wafer substrate on the mount substrate, a method using a transfer member (transfer method) is known.

For example, the step of peeling the LED chip from the wafer substrate by the laser lift-off method (LLO method) and holding it on the adhesive layer of the first transfer member, and the LED chip held by the first transfer member are transferred to the second transfer member. It is known to perform a step of further holding the LED chip on the adhesive layer by the LLO method and a step of mounting the LED chip held on the adhesive layer of the second transfer member on the mount substrate by heat crimping (for example). See Patent Document 1).

International Publication No. 2018/173781

However, in the above method, the transfer yield of the LED chip (semiconductor chip) is not sufficient. Specifically, in the technique of Patent Document 1, when the semiconductor chip on the first transfer member is held (transferred) by the second transfer member, some of the semiconductor chips are not transferred and the first transfer member is not transferred. Sometimes it remained on top.

Further, as in Patent Document 1, the adhesive layer of the second transfer member may adhere to the semiconductor chip and contaminate the semiconductor chip.

The present invention has been made in view of the above problems, and is capable of improving the transfer yield of a semiconductor chip without contaminating the semiconductor chip, a device transfer member, a method for manufacturing the device transfer member, and a semiconductor device. The purpose is to provide a method.

The above problem can be solved by the following configuration.

The element transfer member of the present invention includes a base material having a plurality of first through holes penetrating in the thickness direction and a base material having a plurality of first through holes.
It has a continuous or discontinuous resin layer arranged on the substrate and having a plurality of second through holes communicating with each of the plurality of first through holes.

The method for manufacturing an element transfer member of the present invention includes a step of preparing a laminate having a substrate having a plurality of first through holes penetrating in the thickness direction and a resin layer laminated on the substrate.
The resin layer of the laminated body includes a step of forming a plurality of second through holes communicating with each of the plurality of first through holes.

In the method for manufacturing a semiconductor device of the present invention, a plurality of semiconductor chips are attracted through each of the plurality of second through holes of the element transfer member of the present invention, and the plurality of semiconductor chips are attached to the element transfer member. It has a step of holding the semiconductor chip and a step of mounting the plurality of semiconductor chips held by the element transfer member on a mount substrate.

INDUSTRIAL APPLICABILITY According to the present invention, it is possible to provide a device transfer member, a method for manufacturing a device transfer member, and a method for manufacturing a semiconductor device, which can improve the transfer yield of the semiconductor chip without contaminating the semiconductor chip.

1A is a partially enlarged plan view showing the element transfer member according to the present embodiment, and FIG. 1B is an enlarged sectional view taken along line 1B-1B of the element transfer member of FIG. 1A. 2A is a partially enlarged view of FIG. 1A, and FIG. 2B is a partially enlarged view of FIG. 1B. 3A to 3F are partial cross-sectional views showing a method of manufacturing an element transfer member according to the present embodiment. 4A to 4F are cross-sectional views showing a part of the manufacturing process of the semiconductor device according to the present embodiment. 5A and 5B are cross-sectional views showing the rest of the manufacturing process of the semiconductor device according to the present embodiment. FIG. 6A is a partially enlarged plan view showing the element transfer member according to the modified example, and FIG. 6B is an enlarged cross-sectional view taken along line 6B-6B of the element transfer member of FIG. 6A. FIG. 7 is a partially enlarged plan view of the element transfer member according to the modified example. FIG. 8 is a partially enlarged cross-sectional view of the element transfer member according to the modified example.

1. 1. Element transfer member FIG. 1A is a partial plan view of the element transfer member 10 according to the present embodiment, and FIG. 1B is an enlarged sectional view taken along line 1B-1B of the element transfer member 10 of FIG. 1A. 2A is a partially enlarged view of FIG. 1A, and FIG. 2B is a partially enlarged view of FIG. 1B. The following figures, including these figures, are schematic views and differ from the actual dimensions.

As shown in FIGS. 1A and 1B, the device transfer member 10 has a base material 11 having a plurality of first through holes 12 and a discontinuous resin layer 13 having a plurality of second through holes 14.

1-1. Base material 11
The base material 11 is the main body of the element transfer member 10 and has a plurality of first through holes 12 (see FIG. 1B).

The shape of the base material 11 may be any shape as long as it can adsorb and hold the semiconductor chip, and is not particularly limited, but may be, for example, a plate shape. In the present embodiment, the base material 11 has a first surface 11a on one side in the thickness direction (resin layer 13 side) and a second surface 11b on the other side in the thickness direction (opposite side to the resin layer 13). And a plurality of first through holes 12 that communicate the first surface 11a and the second surface 11b (see FIGS. 1A and 1B).

The first through hole 12 is an air flow passage for adsorbing or desorbing the semiconductor chip by air. The first through hole 12 communicates with the second through hole 14, which will be described later.

The shape of the opening on the first surface 11a side of the first through hole 12 is not particularly limited, and may be circular, elliptical, or polygonal. In the present embodiment, the shape of the opening on the first surface 11a side of the first through hole 12 is a quadrangle (see FIGS. 1A and 2A).

The size of the cross section orthogonal to the axial direction of the first through hole 12 may be constant or different in the axial direction. The axial direction refers to the direction of a line connecting the centers of the opening on the first surface 11a side and the opening on the second surface 11b side of the first through hole 12. That is, the size of the opening on the first surface 11a side and the size of the opening on the second surface 11b side of the first through hole 12 may be the same or different. In the present embodiment, the size of the opening on the first surface 11a side and the size of the opening on the second surface 11b side of the first through hole 12 are the same (see FIG. 1B).

The equivalent circle diameter d1 of the opening on the first surface 11a side of the first through hole 12 may be such that the semiconductor chip can be stably adsorbed and held, for example, preferably 5 to 90 μm, preferably 5 to 40 μm. It is more preferable to have it (see FIG. 2A). The circle-equivalent diameter d1 of the opening on the first surface 11a side of the first through hole 12 is the first through hole 12 when viewed from the first surface 11a side along the axial direction of the first through hole 12. The equivalent circle diameter of the opening.

Further, the size of the opening on the first surface 11a side (resin layer 13 side) of the first through hole 12 and the size of the opening on the second surface 13b (base material 11 side) of the second through hole 14, which will be described later. May be the same or different. Above all, from the viewpoint of facilitating the suction and desorption of the semiconductor chip, the circular equivalent diameter d1 of the opening on the first surface 11a side of the first through hole 12 is the opening on the second surface 13b side of the second through hole 14. It is preferable that the diameter is larger than the circle equivalent diameter d2 (see FIG. 2B).

The distance (pitch) p between the centers of the openings of the plurality of first through holes 12 on the first surface 11a side is not particularly limited and may be appropriately set according to the pitches of the plurality of semiconductor chips to be held (described later). See FIG. 4E). For example, when the semiconductor chip is a micro LED chip, the distance p between the centers of the openings of the plurality of first through holes 12 on the first surface 11a side is preferably 20 to 500 μm, preferably 20 to 100 μm. Is more preferable. The center-to-center distance p of the openings of the plurality of first through holes 12 on the first surface 11a side means the minimum value among the center-to-center distances of the openings of the plurality of first through holes 12 on the first surface 11a side. .. The center of the opening of the first through hole 12 is the center of gravity of the opening.

The distance p between the centers of the plurality of first through holes 12 on the first surface 11a side and the distance p between the centers of the plurality of first through holes 12 on the side of the second surface 11b may be the same or different. You may.

The storage elastic modulus of the base material 11 is preferably higher than the storage elastic modulus of the resin layer 13. That is, the material constituting the base material 11 is preferably a material having a higher storage elastic modulus than the material constituting the resin layer 13. Specifically, the storage elastic modulus of the material constituting the base material 11 at 25 ° C. is preferably ^{1.0 × 10 9 to} 1.0 × 10 ^{11 Pa.} The storage modulus can be measured at 25 ° C. according to JIS K 7244-1: 1998.

The material constituting the base material 11 may be a metal such as nickel or silicon (Si), an inorganic material such as ceramic or glass, or a resin material. Above all, inorganic materials such as sapphire and ceramic are more preferable from the viewpoint of having strength capable of stably holding a semiconductor chip.

The thickness t1 of the base material 11 is not particularly limited, but is preferably, for example, 50 to 1000 μm, more preferably 500 to 1000 μm (see FIG. 1B).

1-2. Resin layer 13
The resin layer 13 is arranged on the first surface 11a of the base material 11 and is in close contact with the semiconductor chip to suppress air leakage during suction. That is, the resin layer 13 can function as an element adsorption layer.

The resin layer 13 may be continuously arranged on the first surface 11a of the base material 11 (see FIGS. 6A and 6B described later), or may be discontinuous corresponding to each of the plurality of first through holes 12. It may be arranged in (see FIGS. 1A and 1B). In the present embodiment, the resin layer 13 is arranged in an island shape so as to surround each of the openings of the plurality of first through holes 12 (see FIGS. 1A and 1B).

The discontinuous resin layer 13 has a plurality of second through holes 14 (see FIGS. 1A and 1B). That is, the second through hole 14 is surrounded by the resin layer 13 (see FIGS. 1A and 2A).

In the present embodiment, the resin layer 13 has a first surface 13a on one side in the thickness direction (the side opposite to the base material 11) and a second surface 13b on the other side in the thickness direction (base material 11 side). And a second through hole 14 that communicates the first surface 13a and the second surface 13b. The second through hole 14 communicates with the first through hole 12 and constitutes an air flow path.

The shape of the opening on the second surface 13b side (base material 11 side) of the second through hole 14 is not particularly limited, and may be circular, elliptical, or polygonal. In the present embodiment, the shape of the opening on the second surface 13b side of the second through hole 14 is a quadrangle (see FIGS. 1A and 2A).

Further, the shape of the opening on the second surface 13b side (base material 11 side) of the second through hole 14 is the same as the shape of the opening on the first surface 11a side (resin layer 13 side) of the first through hole 12. It may be (see FIG. 2A) or it may be different (see FIG. 7 described later). In the present embodiment, the shape of the opening on the second surface 13b side of the second through hole 14 is the same as the shape of the opening on the first surface 11a side of the first through hole 12 (see FIG. 2A).

The size of the cross section orthogonal to the axial direction of the second through hole 14 may be constant or different in the axial direction. The axial direction refers to the direction of a line connecting the centers of the opening on the first surface 13a side of the second through hole 14 and the opening on the second surface 13b side. In the present embodiment, the size of the cross section orthogonal to the axial direction of the second through hole 14 decreases from the first surface 13a toward the second surface 13b.
That is, the size of the opening on the first surface 13a side of the second through hole 14 and the size of the opening on the second surface 13b side may be the same or different. In the present embodiment, the size of the opening on the second surface 13b side of the second through hole 14 is smaller than the size of the opening on the first surface 13a side (see FIGS. 1B and 2B).

Further, the size of the opening on the second surface 13b side (base material 11 side) of the second through hole 14 is the size of the opening on the first surface 11a side (resin layer 13 side) of the first through hole 12. It may be the same or different. From the viewpoint of facilitating the function of the resin layer 13 as a valve and further facilitating the attachment / detachment of the semiconductor chip, the size of the opening on the second surface 13b side of the second through hole 14 is the first through hole 12. It is preferably smaller than the size of the opening on the side of one surface 11a (see FIGS. 1B and 2B).

Specifically, the circular equivalent diameter d2 of the opening on the second surface 13b side (base material 11 side) of the second through hole 14 is on the first surface 11a side (resin layer 13 side) of the first through hole 12. It is preferably 100% or less, and more preferably 50 to 100%, with respect to the equivalent circle diameter d1 of the opening. When the ratio of d2 is low, the length (d2-d1) of the resin layer 13 protruding from the edge of the opening of the first through hole 12 becomes long, so that it can easily function as a valve.

For example, the equivalent circle diameter d2 of the opening on the second surface 13b side (base material 11 side) of the second through hole 14 is preferably, for example, 2.5 to 90 μm, and is preferably 2.5 to 40 μm. More preferred.

When the first surface 11a of the base material 11 is viewed in a plan view, the region surrounded by the outer edge portion of the resin layer 13 (in the present embodiment, a square region having a side length of W, see FIG. 2B). The size can be set according to the size of the semiconductor chip. Further, the size of the region surrounded by the outer edge portion of the resin layer 13 can be, for example, 4 to 8 times the size (area) of the opening on the first surface 11a side of the first through hole 12.

The thickness t2 of the resin layer 13 is preferably 1 to 50%, more preferably 1 to 6%, for example, with respect to the total (t1 + t2) of the thickness t1 of the base material 11 and the thickness t2 of the resin layer 13. .. The thickness t2 of the resin layer 13 may be, for example, 30 to 600% with respect to the thickness of the semiconductor chip.

Specifically, the thickness t2 of the resin layer 13 is preferably 10 to 50 μm, more preferably 10 to 30 μm. When the thickness t2 of the resin layer 13 is thin, the resin layer 13 is easily deformed like a valve when the air is sucked or stopped through the first through hole 12 and the second through hole 14. As a result, for example, when the suction of air is stopped from the state of sucking air, the resin layer 13 can be deformed so as to push out the semiconductor chip, so that the mounting on the mount substrate becomes easier.

The storage elastic modulus of the resin layer 13 is preferably lower than the storage elastic modulus of the base material 11. That is, the material constituting the resin layer 13 preferably has a lower storage elastic modulus than the material constituting the base material 11. The storage elastic modulus of the resin layer 13 at 25 ° C. can be, for example, 1.0 × 10 ^{5 to} 1.0 × 10 ¹⁰ Pa. The storage elastic modulus can be measured in the same manner as described above.

The material constituting the resin layer 13 preferably satisfies the storage elastic modulus, and may be a thermoplastic resin composition or a crosslinked product of a crosslinkable composition. From the viewpoint of easily obtaining excellent shock absorption, adhesion (with a semiconductor chip), and durability, the material constituting the resin layer 13 is preferably a crosslinked product of a crosslinkable composition.

That is, the resin layer 13 preferably contains a crosslinked product of a crosslinkable composition containing a polymer and a crosslinking agent.

The polymer may be a raw material rubber or a polymer other than the raw material rubber.

Examples of raw rubber include silicone rubber, urethane rubber, acrylic rubber, ethylene-propylene-diene copolymer (EPDM), chloroprene rubber, styrene-butadiene copolymer, acrylic nitrile-butadiene copolymer, polybutadiene rubber, natural Includes rubber, fluororubber, polyester-based thermoplastic elastomers, olefin-based thermoplastic elastomers, and the like. Of these, silicone rubber is preferable because it has good insulating properties and elasticity. The silicone rubber may be an addition crosslinked type, a peroxide crosslinked type, or a condensation crosslinked type.

The cross-linking agent can be appropriately selected depending on the type of raw rubber. For example, examples of cross-linking agents for peroxide-crosslinked silicone rubber, olefin rubber, and acrylic rubber include benzoyl peroxide, bis-2,4-dichlorobenzoyl peroxide, dicumyl peroxide, and di-t-butyl peroxide. Includes organic peroxides such as. Examples of the cross-linking agent for the addition cross-linking type silicone rubber include known metals, metal compounds, and metal complexes (platinum, platinum compounds, and complexes thereof) having catalytic activity for the hydrosilylation reaction.

Examples of polymers other than raw rubber include epoxy resins, functional group-containing olefin resins, functional group-containing acrylic resins, and the like. Examples of cross-linking agents (curing agents) for epoxy resins include phenolic resins and amines, and examples of cross-linking agents for functional group-containing olefin resins and functional group-containing acrylic resins include organic peroxides. Is done.

The crosslinkable composition may further contain other components such as light absorbent materials and antistatic agents.

For example, the second through hole 14 may be formed by laser machining the resin layer 13. In such a case, from the viewpoint of enhancing the absorption of laser light, it is preferable that the crosslinkable composition constituting the resin layer 13 further contains a light-absorbing material that absorbs 70% or more of light having a wavelength of 193 to 248 nm. .. The light absorption rate of the light-absorbing material can be measured by an ultraviolet-visible spectrophotometer.

Examples of such light-absorbing materials include carbon black and various pigments, preferably carbon black. Carbon black can not only enhance the absorption of laser light, but also have antistatic properties.

The content of the light-absorbing material may be any amount as long as it can enhance the absorbency of the laser light, and is not particularly limited, but is, for example, 0.1 to 5% by mass, preferably 0.5 to 5% by mass, based on the crosslinkable composition. It can be 3% by mass.

2. 2. Manufacturing Method of Element Transfer Member FIGS. 3A to 3F are schematic cross-sectional views showing a manufacturing method of the element transfer member 10 according to the present embodiment.

The element transfer member 10 according to the present embodiment is, for example, 1) a step of preparing a laminate 15 having a base material 11 having a plurality of first through holes 12 and a resin layer 13 (see FIGS. 3A to 3C). 2) A step of forming a plurality of second through holes 14 in the resin layer 13 of the obtained laminate 15 (see FIG. 3D), and 3) cutting the resin layer 13 to have a plurality of second through holes 14. It can be manufactured through a step of forming a discontinuous resin layer 13 (see FIGS. 3E and F).

Regarding the step 1), first, a base material 11 having a plurality of first through holes 12 is prepared (see FIG. 3A).

The base material 11 having a plurality of first through holes 12 can be obtained by any method. For example, the base material 11 may be obtained by forming a plurality of first through holes 12 by laser processing or the like. It may be obtained by an electroforming method or the like.

Next, the resin layer 13 is formed on the base material 11 having the plurality of first through holes 12 to obtain the laminated body 15 (see FIG. 3B).

The resin layer 13 can be formed, for example, by applying a crosslinkable composition to the first surface 11a of the base material 11 and then crosslinking the resin layer 13. The crosslinkable composition may be applied, for example, by coating, or a sheet of the crosslinkable composition (uncrosslinked product) may be transferred.

The crosslinkable composition can be crosslinked by heating. The heating method is not particularly limited, but thermal laminating is preferable. This is because it is easy to firmly adhere the base material 11 and the resin layer 13 containing the crosslinked product of the crosslinkable composition, and it is easy to improve the flatness of the surface of the obtained resin layer 13.

Regarding the step 2) Next, a plurality of second through holes 14 are formed in the resin layer 13 of the laminated body (see FIGS. 3C and D).

The second through hole 14 can be formed by any method, but it is preferably performed by a laser processing method because it is possible to form a through hole that is fine and has high shape accuracy (see FIG. 3C). ).

As the laser, an excimer laser, a carbon dioxide gas laser, a YAG laser, or the like that can pierce the resin with high accuracy can be used. Above all, it is preferable to use an excimer laser. The pulse width of the laser is not particularly limited, and may be any of a microsecond laser, a nanosecond laser, a picosecond laser, and a femtosecond laser. Further, the wavelength of the laser is not particularly limited.

In laser processing, the opening diameter of the second through hole 14 tends to be large on the laser irradiation surface of the resin layer 13 where the laser irradiation time is the longest. That is, it tends to have a tapered shape in which the opening diameter increases toward the first surface 13a from the second surface 13b of the resin layer 13 (see FIG. 3D).

Regarding the step 3), the obtained resin layer 13 is cut to form a discontinuous resin layer 13 having a plurality of second through holes 14 (see FIGS. 3E and F).

The resin layer 13 can be cut by removing a part of the resin layer 13. In the present embodiment, the resin layer 13 is removed in a grid pattern (the concave portions are formed in a grid pattern) so as to surround each of the plurality of second through holes 14, and the first surface 11a of the base material 11 is formed. To expose. Thereby, a separated (discontinuous) resin layer 13 corresponding to each of the plurality of first through holes 12 can be obtained (see FIG. 3F).

The resin layer 13 can be cut by any method, for example, it may be physically performed by a laser processing method, plasma processing (plasma etching), or the like, or it may be chemically performed by chemical etching or the like. Above all, it is preferable to use the laser processing method. The conditions of laser processing may be the same as described above.

The method for manufacturing the element transfer member 10 may further include other steps, if necessary. For example, 4) desmear treatment may be performed between the steps 2) and the step 3) or after the step 3).

Regarding the step 4), the desmear treatment is a treatment for removing the smear generated by the laser processing, and is preferably an oxygen plasma treatment. The oxygen plasma treatment can be performed using, for example, a plasma asher, a high frequency plasma etching apparatus, or a microwave plasma etching apparatus.

The obtained element transfer member 10 can be preferably used as a transfer member at the time of manufacturing a semiconductor device.

3. 3. Method for Manufacturing a Semiconductor Device The method for manufacturing a semiconductor device according to the present embodiment includes a step of holding a plurality of semiconductor chips by the element transfer member according to the present embodiment and a plurality of semiconductor chips held by the element transfer member. Is included in the process of mounting on a mount board. The semiconductor chip held in the element transfer member according to the present embodiment may be a semiconductor chip on a wafer substrate or a semiconductor chip held in a transfer film.

4A to 4F are cross-sectional views showing a part of the manufacturing process of the semiconductor device according to the present embodiment, and FIGS. 5A and 5B are cross-sectional views showing the rest of the manufacturing process of the semiconductor device according to the present embodiment. Is.

Specifically, the method for manufacturing a semiconductor device according to the present embodiment is as follows: 1) The semiconductor chip 22 is separated from the wafer substrate 21, and the bump forming surface thereof is in contact with the transfer film 30 (first transfer member). The step of holding the semiconductor chip 22 on the transfer film 30 (see FIGS. 4A to 4C) and 2) the surface of the semiconductor chip 22 held on the transfer film 30 opposite to the bump forming surface of the element transfer member 10 (No. 1). 2 A step of holding by the transfer member) (see FIGS. 4D and E) and 3) a step of arranging and mounting the semiconductor chip 22 held by the element transfer member 10 on the mount substrate 40 (see FIGS. 5A and B). Has.

Regarding the step 1) First, the transfer film 30 is prepared.

The transfer film 30 holds the semiconductor chip 22 separated from the wafer substrate 21 on the slightly adhesive layer 32, and has a base film 31 and a slightly adhesive layer 32 (see FIG. 4A).

The slightly adhesive layer 32 may have an adhesive strength sufficient to hold the semiconductor chip 22 peeled from the wafer substrate 21.

Next, laser light is irradiated from the side of the wafer substrate 21 opposite to the surface on which the semiconductor chip 22 is arranged to separate the semiconductor chip 22 from the wafer substrate 21 and transferred onto the slightly adhesive layer 32 of the transfer film 30. (See FIGS. 4B and C). Specifically, the semiconductor chip 22 is transferred so that the bump forming surface of the semiconductor chip 22 is in contact with the slightly adhesive layer 32 of the transfer film 30.

The semiconductor chip 22 is diced to a size of, for example, 1 mm or less on one side, preferably 80 to 300 μm. The type of the semiconductor chip 22 is not particularly limited, and may be an LED chip (including a micro LED chip), an IC chip (semiconductor integrated circuit chip), or the like.

Regarding the step 2) Next, the semiconductor chip 22 transferred to the transfer film 30 is held by the element transfer member 10 (see FIGS. 4D and E).

Specifically, the resin layer 13 of the element transfer member 10 is applied to the surface of the transfer film 30 opposite to the bump forming surface of the semiconductor chip 22. Then, air is sucked through the first through hole 12 and the second through hole 14 of the element transfer member 10, and the semiconductor chip 22 is adsorbed and held by the element transfer member 10 (see FIGS. 4E and F).

Regarding the step 3), the plurality of semiconductor chips 22 held by the element transfer member 10 are arranged and mounted on the mounting surface of the mount board 40 (wiring board) (see FIGS. 5A and 5B).

Specifically, a plurality of semiconductor chips 22 held by the element transfer member 10 are arranged so that the bump forming surface of the semiconductor chip 22 faces the mounting surface of the mount substrate 40. Then, the suction of air through the first through hole 12 and the second through hole 14 of the element transfer member 10 is stopped, the semiconductor chip 22 is detached from the element transfer member 10, and the semiconductor chip 22 is mounted on the mount substrate 40 (. See FIG. 5A).

The mount board 40 is a wiring board such as a THT board.

The method for manufacturing a semiconductor device of the present invention is suitable for a method for manufacturing an LED panel using an LED chip (as a semiconductor chip), preferably a micro LED chip.

(Action)
The element transfer member 10 according to the present embodiment sucks air from the first through hole 12 and the second through hole 14 of the element transfer member 10 to attract and hold the semiconductor chip 22 on the element transfer member 10. sell. As a result, the semiconductor chip 22 on the transfer film 30 can be reliably held by the element transfer member 10, so that the transfer yield can be improved. Further, since it is not necessary to hold the semiconductor chip 22 by the adhesive layer as in the conventional case, contamination of the semiconductor chip 22 can be suppressed.

(Modification example)
In the above embodiment, the example in which the resin layer 13 is discontinuously arranged (the example in which the resin layer 13 is arranged corresponding to each of the plurality of first through holes 12) has been described, but the present invention is limited to this. Not done.

6A is a partial plan view showing the element transfer member 10 according to the modified example, and FIG. 6B is an enlarged cross-sectional view taken along line 6B-6B of the element transfer member of FIG. 6A. As shown in FIGS. 6A and 6B, the resin layer 13 may be continuously arranged on the first surface 11a of the base material 11 except for the openings of the plurality of first through holes 12. As a result, when the resin layer 13 contains, for example, an antistatic agent, good antistatic properties can be obtained.

Further, in the above embodiment, the shape of the opening on the first surface 11a side (resin layer 13 side) of the first through hole 12 and the second surface 13b side (base material 11 side) of the second through hole 14. The same example is shown in which the shape of the opening is a quadrangle, but the shape is not limited to this and may be a different shape.

FIG. 7 is a partial plan view of the element transfer member 10 according to the modified example. As shown in FIG. 7, the shape of the opening on the first surface 11a side of the first through hole 12 is, for example, a hexagon, and the shape of the opening on the second surface 13b side of the second through hole 14 is For example, it may be circular.

Further, in the above embodiment, the size (or the equivalent circle diameter) of the opening on the first surface 13a side of the second through hole 14 and the size (or the equivalent diameter of the circle) of the opening on the second surface 13b side. ) Is different from, but is not limited to this, and may be the same.

FIG. 8 is a partial cross-sectional view of the element transfer member 10 according to the modified example. As shown in FIG. 8, the size (or the equivalent diameter of the circle) of the opening on the first surface 13a side of the second through hole 14 and the size of the opening on the second surface 13b side of the second through hole 14. It may be the same as (or the equivalent diameter of a circle).

Further, in the above embodiment, an example is shown in which a part of the resin layer 13 is scraped (removed) in a grid pattern to form a discontinuous resin layer 13, but the present invention is not limited to this, and the resin layer 13 is formed in a striped shape. You may scrape it.

Further, in the above embodiment, an example in which the transfer film 30 is used as the first transfer member for holding the semiconductor chip 22 on the wafer substrate 21 is shown in the step 1) of the method for manufacturing a semiconductor device. The element transfer member 10 according to the present embodiment may be used without limitation.

According to the present invention, when a semiconductor chip is mounted on a mount substrate, an element transfer member, a method for manufacturing the element transfer member, and a semiconductor device capable of improving the transfer yield of the semiconductor chip without contaminating the semiconductor chip can be obtained. Production method can be provided.

10 Element transfer member 11 Base material 11a, 13a First surface 11b, 13b Second surface 12 First through hole 13 Resin layer 14 Second through hole 21 Wafer substrate 22 Semiconductor chip

Claims (19)

A base material having a plurality of first through holes penetrating in the thickness direction,
It has a continuous or discontinuous resin layer that is disposed on the substrate and has a plurality of second through holes that communicate with each of the plurality of first through holes.
Element transfer member. The resin layer is formed discontinuously.
The element transfer member according to claim 1. The size of the opening on the base material side of the second through hole is smaller than the size of the opening on the resin layer side of the first through hole.
The element transfer member according to claim 1 or 2. The shape of the opening on the base material side of the second through hole is different from the shape of the opening on the resin layer side of the first through hole.
The element transfer member according to any one of claims 1 to 3. The shape of the opening on the base material side of the second through hole is circular, elliptical or polygonal.
The element transfer member according to any one of claims 1 to 4. The equivalent circle diameter of the opening on the base material side of the second through hole is 2.5 to 90 μm.
The element transfer member according to any one of claims 1 to 5. The size of the opening on the base material side of the second through hole is smaller than the size of the opening on the side opposite to the base material of the second through hole.
The element transfer member according to any one of claims 1 to 6. The thickness of the resin layer is 1.0 to 50% with respect to the total thickness of the base material and the resin layer.
The element transfer member according to any one of claims 1 to 7. The thickness of the resin layer is 10 to 50 μm.
The element transfer member according to any one of claims 1 to 8. The thickness of the base material is 50 to 1000 μm.
The element transfer member according to any one of claims 1 to 9. The storage elastic modulus of the resin layer at 25 ° C. is lower than the storage elastic modulus of the substrate at 25 ° C.
The element transfer member according to any one of claims 1 to 10. The resin layer contains a crosslinked product of a crosslinkable composition containing a polymer and a crosslinking agent.
The element transfer member according to any one of claims 1 to 11. The crosslinkable composition further comprises a light-absorbing material that absorbs 70% or more of light having a wavelength of 193 to 248 nm.
The element transfer member according to claim 12. The light-absorbing material is carbon black.
The element transfer member according to claim 13. The storage elastic modulus of the crosslinked product of the crosslinkable composition at 25 ° C. is 1.0 × 10 ^{5 to} 1.0 × 10 ¹⁰ Pa.
The element transfer member according to any one of claims 12 to 14. A step of preparing a laminated body having a base material having a plurality of first through holes penetrating in the thickness direction and a resin layer laminated on the base material.
A step of forming a plurality of second through holes communicating with each of the plurality of first through holes in the resin layer of the laminate.
Have,
A method for manufacturing an element transfer member. Further comprising a step of cutting the resin layer to form a discontinuous resin layer having the plurality of second through holes.
The method for manufacturing an element transfer member according to claim 16. A plurality of semiconductor chips are adsorbed through each of the plurality of second through holes of the element transfer member according to any one of claims 1 to 15, and the plurality of semiconductor chips are attached to the element transfer member. The process of holding and
The present invention includes a step of mounting the plurality of semiconductor chips held by the element transfer member on a mount substrate.
Manufacturing method of semiconductor device. The semiconductor chip is an LED chip.
The method for manufacturing a semiconductor device according to claim 18.

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