JP2021184482A5 - - Google Patents
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- JP2021184482A5 JP2021184482A5 JP2021123461A JP2021123461A JP2021184482A5 JP 2021184482 A5 JP2021184482 A5 JP 2021184482A5 JP 2021123461 A JP2021123461 A JP 2021123461A JP 2021123461 A JP2021123461 A JP 2021123461A JP 2021184482 A5 JP2021184482 A5 JP 2021184482A5
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- notch
- metal layer
- insulating
- frequency
- substrate according
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- 239000000758 substrate Substances 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims 2
Description
本発明の一実施形態にかかる高周波基体は、絶縁基体と、第１金属層と、第２金属層とを備えている。絶縁基体は、上面と、側面と、上面および側面に交差して位置する第１切欠き部と、該第１切欠き部と間を空けて位置するとともに上面および側面に交差して位置する第２切欠き部と、を有する。第１金属層は、上面に、第１切欠き部および第２切欠き部に隣り合って位置している。第２金属層は、上面に、第１金属層と間を空けて位置している。第１切欠き部は、上面と交差する第１側面と、該第１側面と接続する第１底面と、を有し、第２切欠き部は、上面と交差する第２側面と、該第２側面と接続する第２底面と、を有している。第２金属層は、上面から第２側面に連続して位置しており、絶縁基体は、平面視において、第２切欠き部の端部のうち絶縁基体の側面とは反対側の端部に、第２
切欠き部と連続した凹部を有している。
The high frequency substrate according to the embodiment of the present invention includes an insulating substrate, a first metal layer, and a second metal layer. The insulating substrate is located at a distance from the first notch located on the upper surface, the side surface, and the upper surface and the side surface, and is located so as to intersect the upper surface and the side surface. It has a second notch and a second notch. The first metal layer is located on the upper surface adjacent to the first notch and the second notch. The second metal layer is located on the upper surface with a gap from the first metal layer. The first notch has a first side surface that intersects the upper surface and a first bottom surface that connects to the first side surface, and the second notch has a second side surface that intersects the upper surface and the first surface. It has a second bottom surface connected to the two side surfaces. The second metal layer is continuously located from the upper surface to the second side surface, and the insulating substrate is located at the end portion of the end portion of the second notch portion opposite to the side surface of the insulating substrate in a plan view. , Second
It has a recess that is continuous with the notch.
Claims (12)
前記上面に、前記第１切欠き部および前記第２切欠き部と隣り合って位置する第１金属層と、
前記上面に、前記第１金属層と間を空けて位置する第２金属層と、を備えており、
前記第１切欠き部は、前記上面と交差する第１側面と、該第１側面と接続する第１底面と、を有し、
前記第２切欠き部は、前記上面と交差する第２側面と、該第２側面と接続する第２底面と、を有しており、
前記第２金属層は、前記上面から前記第２側面に連続して位置しており、
前記絶縁基体は、平面視において、前記第２切欠き部の端部のうち前記絶縁基体の前記側面とは反対側の端部に、前記第２切欠き部と連続した凹部を更に有している、高周波基体。 The upper surface, the side surface, the first notch located intersecting the upper surface and the side surface, and the first notch portion are spaced apart from each other and are located intersecting the upper surface and the side surface. An insulating substrate having a second notch , and
On the upper surface , a first metal layer located adjacent to the first notch and the second notch,
The upper surface thereof is provided with a second metal layer located at a distance from the first metal layer.
The first notch portion has a first side surface that intersects the upper surface and a first bottom surface that connects to the first side surface.
The second notch portion has a second side surface that intersects the upper surface and a second bottom surface that connects to the second side surface.
The second metal layer is continuously located from the upper surface to the second side surface.
The insulating substrate further has a recess continuous with the second notch at the end of the end of the second notch opposite to the side surface of the insulating substrate in a plan view. There is a high frequency substrate.
前記第２底面の少なくとも一部は、前記絶縁層が露出している、請求項１～３のいずれか１つに記載の高周波基体。 The high-frequency substrate according to any one of claims 1 to 3, wherein the insulating layer is exposed at least a part of the second bottom surface.
前記凹部は、前記第２側面と連続する凹部側面と、前記第２底面と連続する凹部底面と、を有しており、 The recess has a recess side surface continuous with the second side surface and a recess bottom surface continuous with the second bottom surface.
前記凹部底面の少なくとも一部は、前記絶縁層が露出している、請求項１～４のいずれか１つに記載の高周波基体。 The high-frequency substrate according to any one of claims 1 to 4, wherein the insulating layer is exposed at least a part of the bottom surface of the recess.
前記第１底面の少なくとも一部は、前記絶縁層が露出している、請求項１～５のいずれか１つに記載の高周波基体。 The high-frequency substrate according to any one of claims 1 to 5, wherein the insulating layer is exposed at least a part of the first bottom surface.
前記上面に位置する前記第２金属層の外縁の少なくとも一部は、平面視において、前記絶縁基体の前記上面における前記側面側の端部と重なって位置している、請求項１～６のいずれか１つに記載の高周波基体。 Any of claims 1 to 6, wherein at least a part of the outer edge of the second metal layer located on the upper surface is located so as to overlap the side surface side end portion of the upper surface of the insulating substrate in a plan view. The high frequency substrate according to one.
平面視において、
２つの前記第１金属層が、前記第１切欠き部を挟んで位置しており、
２つの前記第２切欠き部が、２つの前記第１金属層および前記第１切欠き部を挟んで位置していることを特徴する請求項１～７のいずれか１つに記載の高周波基体。 The upper surface has the first notch , two the second notches , the recess continuous with the second notch, the two first metal layers, and the second metal layer. And
In plan view
The two first metal layers are located so as to sandwich the first notch .
The high frequency substrate according to any one of claims 1 to 7 , wherein the two second notches are located so as to sandwich the two first metal layers and the first notch. ..
前記第１金属層が延びる方向と交差する断面視において、前記端子部の幅は、前記線路部の幅以上であることを特徴とする請求項１～９のいずれか１つに記載の高周波基体。The high-frequency substrate according to any one of claims 1 to 9, wherein the width of the terminal portion is equal to or larger than the width of the line portion in a cross-sectional view intersecting the direction in which the first metal layer extends. ..
前記基板に位置する枠体と、
前記枠体に固定された請求項１～１０のいずれか１つに記載の高周波基体とを備えていることを特徴とする高周波パッケージ。 With the board
The frame body located on the substrate and
A high-frequency package comprising the high-frequency substrate according to any one of claims 1 to 10 fixed to the frame.
前記基板に実装された、前記高周波パッケージの前記高周波基体と電気的に接続された半導体素子と、
前記枠体の上端に接合された、前記半導体素子を覆うとともに前記高周波パッケージの内部を覆った蓋体とを備えていることを特徴とする高周波モジュール。 The high frequency package according to claim 11 and
A semiconductor device mounted on the substrate and electrically connected to the high-frequency substrate of the high-frequency package,
A high-frequency module comprising a lid bonded to the upper end of the frame to cover the semiconductor element and the inside of the high-frequency package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021123461A JP7197647B2 (en) | 2017-12-25 | 2021-07-28 | High frequency substrates, high frequency packages and high frequency modules |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017247851A JP6923431B2 (en) | 2017-12-25 | 2017-12-25 | High frequency substrates, high frequency packages and high frequency modules |
| JP2021123461A JP7197647B2 (en) | 2017-12-25 | 2021-07-28 | High frequency substrates, high frequency packages and high frequency modules |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017247851A Division JP6923431B2 (en) | 2017-12-25 | 2017-12-25 | High frequency substrates, high frequency packages and high frequency modules |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021184482A JP2021184482A (en) | 2021-12-02 |
| JP2021184482A5 true JP2021184482A5 (en) | 2022-04-06 |
| JP7197647B2 JP7197647B2 (en) | 2022-12-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2017247851A Active JP6923431B2 (en) | 2017-12-25 | 2017-12-25 | High frequency substrates, high frequency packages and high frequency modules |
| JP2021123461A Active JP7197647B2 (en) | 2017-12-25 | 2021-07-28 | High frequency substrates, high frequency packages and high frequency modules |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
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| JP2017247851A Active JP6923431B2 (en) | 2017-12-25 | 2017-12-25 | High frequency substrates, high frequency packages and high frequency modules |
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| JP (2) | JP6923431B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7235878B2 (en) * | 2019-09-11 | 2023-03-08 | Ｎｇｋエレクトロデバイス株式会社 | Terminal structure, package, and method of manufacturing terminal structure |
| JP7254011B2 (en) * | 2019-11-20 | 2023-04-07 | 京セラ株式会社 | Wiring substrate, package for storing semiconductor element, and semiconductor device |
| JP7223170B2 (en) * | 2019-12-26 | 2023-02-15 | Ｎｇｋエレクトロデバイス株式会社 | Wiring structure |
| JP7534407B2 (en) * | 2020-06-29 | 2024-08-14 | 京セラ株式会社 | Wiring substrate and electronic device |
| JPWO2023084629A1 (en) * | 2021-11-10 | 2023-05-19 | ||
| WO2023145651A1 (en) * | 2022-01-28 | 2023-08-03 | 京セラ株式会社 | Wiring board, electronic component mounting package using wiring board, and electronic module |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08125412A (en) * | 1994-10-19 | 1996-05-17 | Mitsubishi Electric Corp | Transmission line and its manufacture |
| JP2004128990A (en) * | 2002-10-03 | 2004-04-22 | Shinko Electric Ind Co Ltd | Package for electronic parts and substrate for high frequency |
| JP5636834B2 (en) * | 2010-09-10 | 2014-12-10 | 富士通株式会社 | High frequency circuit package and high frequency circuit device |
| JP6162800B2 (en) * | 2013-05-29 | 2017-07-12 | 京セラ株式会社 | Device storage package and mounting structure |
| JP6208618B2 (en) * | 2014-04-25 | 2017-10-04 | 京セラ株式会社 | Device mounting board and mounting structure |
| CN106463464B (en) * | 2014-07-30 | 2019-02-22 | 京瓷株式会社 | Electronic component storage packaging part and the electronic device for having it |
| JP2016146439A (en) * | 2015-02-09 | 2016-08-12 | Ｎｇｋエレクトロデバイス株式会社 | Package for housing high frequency semiconductor element |
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2017
- 2017-12-25 JP JP2017247851A patent/JP6923431B2/en active Active
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2021
- 2021-07-28 JP JP2021123461A patent/JP7197647B2/en active Active
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