JP2021176150A - Light-emitting device, electronic apparatus, and illumination device - Google Patents

Abstract

To provide a light-emitting device, an electronic apparatus, or an illumination device with high reliability and low consumption power.SOLUTION: A light-emitting device includes a first light-emitting element, a second light-emitting element, a third light-emitting element, and a fourth light-emitting element. Each of the first light-emitting element, the second light-emitting element, the third light-emitting element, and the fourth light-emitting element includes a common EL layer between an anode and a cathode. The EL layer includes a first light-emitting layer and a second light-emitting layer. The first light-emitting layer includes a fluorescent material. The fluorescent material has the emission spectrum in a toluene solution with a peak wavelength in the range of 440 nm to 460 nm, preferably 440 nm to 455 nm. The second light-emitting layer includes a phosphorescent material. The first light-emitting element emits blue light. The second light-emitting element emits green light. The third light-emitting element emits red light. The fourth light-emitting element emits yellow light.SELECTED DRAWING: None

Description

The present invention relates to a product, a method, or a manufacturing method. Alternatively, the present invention relates to a process, machine, manufacture, or composition (composition of matter). In particular, one aspect of the present invention relates to a light emitting element, a light emitting device, an electronic device, and a lighting device, a method for driving the same, or a method for manufacturing the same.

Light emitting devices that use organic compounds as light emitters, which are thin and lightweight, have high-speed responsiveness, and are driven by DC low voltage, are expected to be applied to next-generation flat panel displays. In particular, a light emitting device in which light emitting elements are arranged in a matrix is considered to be superior in that it has a wide viewing angle and excellent visibility as compared with a conventional liquid crystal display device.

In the light emitting mechanism of the light emitting element, by sandwiching an EL layer containing a light emitter between a pair of electrodes and applying a voltage, electrons injected from the cathode and holes injected from the anode are regenerated at the light emitting center of the EL layer. It is said that they combine to form a molecular exciter, and when the molecular exciton relaxes to the ground state, it releases energy and emits light. Singlet and triplet excitations are known as excited states, and it is considered that light emission is possible through either excited state.

With respect to such a light emitting element, in order to improve the characteristics of a light emitting device using the element, improvement of the element structure, material development, and the like are actively carried out (see, for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2010-182699

In the development of light emitting elements, reducing the drive voltage and the amount of current are one of the important items in promoting the reduction of power consumption of products. In order to reduce the drive voltage of the light emitting element and the amount of current, the carrier balance in the EL layer of the light emitting element can be controlled, the carrier recombination probability can be improved, and the EL layer can be used. The light emitting characteristics in the light emitting layer contained in the above are important. Therefore, it is important to improve the light emitting characteristics of the light emitting layer by forming the EL layer with a desired configuration, reduce the driving voltage of the light emitting element, and reduce the amount of current. Alternatively, it is preferable to reduce the driving voltage of the light emitting element and obtain a highly reliable light emitting element.

Therefore, in one aspect of the present invention, a light emitting device, an electronic device, or a lighting device having low power consumption is provided. Alternatively, another aspect of the present invention provides a light emitting device, an electronic device, or a lighting device, which consumes less power and is highly reliable. Further, in another aspect of the present invention, a novel light emitting element and a light emitting device are provided. The description of these issues does not prevent the existence of other issues. It should be noted that one aspect of the present invention does not need to solve all of these problems. It should be noted that the problems other than these are naturally clarified from the description of the description, drawings, claims, etc., and it is possible to extract the problems other than these from the description of the description, drawings, claims, etc. Is.

One aspect of the present invention is a light emitting device having a first light emitting element, a second light emitting element, a third light emitting element, and a fourth light emitting element, and the first light emitting element is a first EL. It is configured to have a layer, a second EL layer, and a charge generation layer, and the second light emitting element has a first EL layer, a second EL layer, and a charge generation layer. The third light emitting element is composed of a first EL layer and a second EL.
It is composed of a layer and a charge generation layer, and the fourth light emitting element includes a first EL layer and a second E.
It is composed of an L layer and a charge generation layer, and the first EL layer has a region that functions as a part of the first light emitting element and a region that functions as a part of the second light emitting element. The second E has a region that functions as a part of the third light emitting element and a region that functions as a part of the fourth light emitting element.
The L layer has a region that functions as a part of the first light emitting element, a region that functions as a part of the second light emitting element, a region that functions as a part of the third light emitting element, and a fourth light emitting element. It has a region that functions as a part of the element, and the charge generation layer has a region that functions as a part of the first light emitting element.
The charge generation layer has a region that functions as a part of the second light emitting element, a region that functions as a part of the third light emitting element, and a region that functions as a part of the fourth light emitting element. , The first EL layer is provided between the first EL layer and the second EL layer, and the first EL layer has two benzo [b] in the pyrene skeleton.
The second EL layer has a function capable of emitting light by phosphorescence, and the first light emitting element has an organic compound having a structure in which a naphtho [1,2-d] flanylamine skeleton is independently bonded to each other. The second light emitting element has a function of being able to emit light in green, and the third light emitting element has a function of being able to emit light in red. It is a light emitting device characterized by.

Another aspect of the present invention is a first light emitting element, a second light emitting element, a third light emitting element, and a fourth light emitting element.
A light emitting device having the above light emitting element, the first light emitting element includes a first EL layer and a second EL.
It is composed of a layer and a charge generation layer, and the second light emitting element includes a first EL layer and a second E.
It is configured to have an L layer and a charge generation layer, and the third light emitting element is configured to have a first EL layer, a second EL layer, and a charge generation layer. The light emitting element of No. 4 has a first EL layer and a second light emitting element.
The EL layer and the charge generation layer are provided, the first light emitting element has an anode, and the first EL layer is provided between the anode and the charge generation layer. The EL layer 1 has a region that functions as a part of the first light emitting element, a region that functions as a part of the second light emitting element, a region that functions as a part of the third light emitting element, and a fourth. The second EL layer has a region that functions as a part of the light emitting element of the above, and a region that functions as a part of the first light emitting element and a region that functions as a part of the second light emitting element. A region that functions as a part of the third light emitting element and a region that functions as a part of the fourth light emitting element, and the charge generation layer is a region that functions as a part of the first light emitting element. A region that functions as a part of the second light emitting element, a region that functions as a part of the third light emitting element, and a region that functions as a part of the fourth light emitting element, and charges are generated. The layer is provided between the first EL layer and the second EL layer, and the first EL layer has two benzo [b] naphtho [1,2-d] flanylamine skeletons in a pyrene skeleton, respectively. It has an organic compound having an independently bonded structure, the second EL layer has a function of being able to emit light by phosphorescence, and the first light emitting element has a function of being able to emit light in blue. The second light emitting element is a light emitting device having a function of being able to emit light in green, and the third light emitting element is having a function of being able to emit light in red.

Another aspect of the present invention is a first light emitting element, a second light emitting element, a third light emitting element, and a fourth light emitting element.
A light emitting device having the above light emitting element, the first light emitting element includes a first EL layer and a second EL.
It is composed of a layer and a charge generation layer, and the second light emitting element includes a first EL layer and a second E.
It is configured to have an L layer and a charge generation layer, and the third light emitting element is configured to have a first EL layer, a second EL layer, and a charge generation layer. The light emitting element of No. 4 has a first EL layer and a second light emitting element.
The EL layer and the charge generation layer are provided, the first light emitting element has an anode, and the first EL layer is provided between the anode and the charge generation layer. The EL layer 1 has a region that functions as a part of the first light emitting element, a region that functions as a part of the second light emitting element, a region that functions as a part of the third light emitting element, and a fourth. The second EL layer has a region that functions as a part of the light emitting element of the above, and a region that functions as a part of the first light emitting element and a region that functions as a part of the second light emitting element. A region that functions as a part of the third light emitting element and a region that functions as a part of the fourth light emitting element, and the charge generation layer is a region that functions as a part of the first light emitting element. A region that functions as a part of the second light emitting element, a region that functions as a part of the third light emitting element, and a region that functions as a part of the fourth light emitting element, and charges are generated. The layer is provided between the first EL layer and the second EL layer, and the first EL layer has two benzo [b] naphtho [1,2-d] furanylamine skeletons in a pyrene skeleton, respectively. It has an organic compound having an independently bonded structure, the second EL layer has a function of being able to emit yellow phosphorescence, and the first light emitting element has a function of being able to emit light in blue. The second light emitting element is a light emitting device having a function of being able to emit light in green, and the third light emitting element is having a function of being able to emit light in red.

In each of the above configurations, the two benzo [b] naphtho [1,2-d] flanylamine skeletons are light emitting devices that are bound to the 1st and 6th positions of the pyrene skeleton, respectively.

Further, in each of the above configurations, the nitrogen atoms in the two benzo [b] naphtho [1,2-d] flanylamine skeletons are independently at the 6-position or the 6-position of the benzo [b] naphtho [1,2-d] flanyl group. It is a light emitting device characterized by being combined with the 8th position.

One aspect of the present invention is a light emitting device having a first light emitting element, a second light emitting element, a third light emitting element, and a fourth light emitting element, and the first light emitting element is a first EL. It is configured to have a layer, a second EL layer, and a charge generation layer, and the second light emitting element has a first EL layer, a second EL layer, and a charge generation layer. The third light emitting element is composed of a first EL layer and a second EL.
It is composed of a layer and a charge generation layer, and the fourth light emitting element includes a first EL layer and a second E.
It is configured to have an L layer and a charge generation layer, and the first light emitting element has an anode and a first EL.
The layer is provided between the anode and the charge generation layer, and the first EL layer has a region that functions as a part of the first light emitting element and a region that functions as a part of the second light emitting element. The second EL layer has a region that functions as a part of the third light emitting element and a region that functions as a part of the fourth light emitting element, and the second EL layer functions as a part of the first light emitting element. It has a region to function, a region to function as a part of the second light emitting element, a region to function as a part of the third light emitting element, and a region to function as a part of the fourth light emitting element. The charge generation layer includes a region that functions as a part of the first light emitting element, a region that functions as a part of the second light emitting element, a region that functions as a part of the third light emitting element, and a fourth. It has a region that functions as a part of the light emitting element, and the charge generation layer is a first EL.
Provided between the layer and the second EL layer, the first EL layer has a first organic compound represented by the following general formula (G1) and a second organic compound. The second EL layer has a function capable of emitting yellow phosphorescence, and the first light emitting element has a function capable of emitting blue light.
The second light emitting element is a light emitting device having a function of being able to emit light in green, and the third light emitting element is having a function of being able to emit light in red.

In the general formula (G1), Ar ¹ and Ar ² each independently represent an aryl group having 6 to 13 carbon atoms forming a substituted or unsubstituted ring, and R ^{1 to} R ⁸ and R ^{10 to} R ^{18 respectively.} And R ^{20 to} R ²⁸ are independently hydrogen, substituted or unsubstituted alkyl groups having 1 to 6 carbon atoms, substituted or unsubstituted alkoxy groups having 1 to 6 carbon atoms, cyano groups, halogens, substituted or absent. It represents a substituted haloalkyl group having 1 to 6 carbon atoms or a substituted or unsubstituted aryl group having 6 to 10 carbon atoms.

One aspect of the present invention is a light emitting device having a first light emitting element, a second light emitting element, a third light emitting element, and a fourth light emitting element, and the first light emitting element is a first EL. It is configured to have a layer, a second EL layer, and a charge generation layer, and the second light emitting element has a first EL layer, a second EL layer, and a charge generation layer. The third light emitting element is composed of a first EL layer and a second EL.
It is composed of a layer and a charge generation layer, and the fourth light emitting element includes a first EL layer and a second E.
It is configured to have an L layer and a charge generation layer, and the first light emitting element has an anode and a first EL.
The layer is provided between the anode and the charge generation layer, and the first EL layer has a region that functions as a part of the first light emitting element and a region that functions as a part of the second light emitting element. The second EL layer has a region that functions as a part of the third light emitting element and a region that functions as a part of the fourth light emitting element, and the second EL layer functions as a part of the first light emitting element. It has a region to function, a region to function as a part of the second light emitting element, a region to function as a part of the third light emitting element, and a region to function as a part of the fourth light emitting element. The charge generation layer includes a region that functions as a part of the first light emitting element, a region that functions as a part of the second light emitting element, a region that functions as a part of the third light emitting element, and a fourth. It has a region that functions as a part of the light emitting element, and the charge generation layer is a first EL.
Provided between the layer and the second EL layer, the first EL layer has a first organic compound represented by the following general formula (G2) and a second organic compound. The second EL layer has a function capable of emitting yellow phosphorescence, and the first light emitting element has a function capable of emitting blue light.
The second light emitting element is a light emitting device having a function of being able to emit light in green, and the third light emitting element is having a function of being able to emit light in red.

In the general formula (G2), R ^{1 to} R ⁸ and R ^{29 to} R ³⁸ are independently hydrogen, respectively.
Substituent or unsubstituted alkyl group having 1 to 6 carbon atoms, substituted or unsubstituted alkoxy group having 1 to 6 carbon atoms, cyano group, halogen, substituted or unsubstituted haloalkyl group having 1 to 6 carbon atoms, or substituted or unsubstituted. Represents an unsubstituted aryl group having 6 to 10 carbon atoms.

One aspect of the present invention is a light emitting device having a first light emitting element, a second light emitting element, a third light emitting element, and a fourth light emitting element, and the first light emitting element is a first EL. It is configured to have a layer, a second EL layer, and a charge generation layer, and the second light emitting element has a first EL layer, a second EL layer, and a charge generation layer. The third light emitting element is composed of a first EL layer and a second EL.
It is composed of a layer and a charge generation layer, and the fourth light emitting element includes a first EL layer and a second E.
It is configured to have an L layer and a charge generation layer, and the first light emitting element has an anode and a first EL.
The layer is provided between the anode and the charge generation layer, and the first EL layer has a region that functions as a part of the first light emitting element and a region that functions as a part of the second light emitting element. The second EL layer has a region that functions as a part of the third light emitting element and a region that functions as a part of the fourth light emitting element, and the second EL layer functions as a part of the first light emitting element. It has a region to function, a region to function as a part of the second light emitting element, a region to function as a part of the third light emitting element, and a region to function as a part of the fourth light emitting element. The charge generation layer includes a region that functions as a part of the first light emitting element, a region that functions as a part of the second light emitting element, a region that functions as a part of the third light emitting element, and a fourth. It has a region that functions as a part of the light emitting element, and the charge generation layer is a first EL.
Provided between the layer and the second EL layer, the first EL layer has a first organic compound represented by the following structural formula (132) and a second organic compound. The second EL layer has a function capable of emitting yellow phosphorescence, the first light emitting element has a function capable of emitting light in blue, and the second light emitting element emits light in green. The third light emitting element is a light emitting device having a function of being able to emit light in red.

One aspect of the present invention is a light emitting device having a first light emitting element, a second light emitting element, a third light emitting element, and a fourth light emitting element, and the first light emitting element and the second light emitting element. , Third light emitting element,
Each of the fourth light emitting element and the fourth light emitting element has a common EL layer between the anode and the cathode, and the EL
The layer has a first light emitting layer and a second light emitting layer, the first light emitting layer contains a fluorescent light emitting substance, and the fluorescent light emitting substance has a peak wavelength of the emission spectrum in a toluene solution of 440 nm.
The second light emitting layer is present at 460 nm to 460 nm, preferably 440 nm to 455 nm.
The first light emitting element contains a phosphorescent substance, the first light emitting element emits blue light, and the second light emitting element emits blue light.
The third light emitting element emits green light, the fourth light emitting element emits red light, and the fourth light emitting element emits yellow light.

Another aspect of the present invention is a first light emitting element, a second light emitting element, a third light emitting element, and a fourth light emitting element.
The first light emitting element, the second light emitting element, the third light emitting element, and the fourth light emitting element are all light emitting devices having a charge generation layer between the anode and the cathode. It has a common first EL layer and a second EL layer, and the first EL layer has a first light emitting layer.
The second EL layer has a second light emitting layer, and the first light emitting layer contains a fluorescent light emitting substance.
The fluorescent light emitting substance has a peak wavelength of a light emitting spectrum in a toluene solution of 440 nm to 460 nm, preferably 440 nm to 455 nm, the second light emitting layer contains a phosphorescent light emitting substance, and the first light emitting element comprises a phosphorescent light emitting substance. The second light emitting element emits blue light, the third light emitting element emits red light, and the fourth light emitting element emits yellow light.

Another aspect of the present invention is a light emitting device having a half width of the emission spectrum of 20 nm or more and 50 nm or less in the above configuration.

In another aspect of the present invention, in the above configuration, the chromaticity of the first light emitting element is x = 0.13 or more and 0.17 or less and y = 0.03 or more and 0.08 or less in xy chromaticity coordinates. A light emitting device. More preferably, in the light emitting device having the above configuration, the light emitting device has y = 0.03 or more and 0.07 or less.

Another aspect of the present invention is a light emitting device in which the light emitted from the first light emitting element is emitted to the outside of the light emitting device through a blue color filter in the above configuration.

In another aspect of the present invention, in the above configuration, the chromaticity in the xy chromaticity coordinates is (0.313,
When the light of 0.329) is obtained with a brightness of 300 cd / m ² , the power consumption (total power consumption of the first to fourth light emitting elements) excluding the driving FET of the light emitting device is 1 mW / cm ^2. Above 7
It is a light emitting device having a mW / cm ^{2 or less.}

Further, in another aspect of the present invention, in the above configuration, the chromaticity in the xy chromaticity coordinates is (0.3).
The drive FE of the light emitting device when the light of 13,0.329) is obtained at a brightness of 300 cd / m ^2.
Power consumption including T (power consumption calculated from the product of voltage between anode and cathode and current consumption) is 2 m
A W / cm ² or more 15 mW / cm ² or less is a light-emitting device.

Another aspect of the present invention is an electronic device having the light emitting device, a connection terminal, or an operation key.

In one aspect of the present invention, not only a light emitting device having a light emitting element, but also the light emitting element or an electronic device to which the light emitting device is applied (specifically, the light emitting element or the light emitting device and a connection terminal, or An electronic device having an operation key) and a lighting device (specifically, a light emitting element, a lighting device having the light emitting device, and a housing) are also included in the category. Therefore, the light emitting device in the present specification refers to an image display device or a light source (including a lighting device). Further, a module in which a connector, for example, an FPC (Flexible printed circuit) or a TCP (Tape Carrier Package), is attached to the light emitting device.
A module with a printed wiring board at the end of TCP, or a COG (Chi) on the light emitting element
A module in which an IC (integrated circuit) is directly mounted by the pOnGlass) method is also included in the light emitting device.

According to one aspect of the present invention, a novel light emitting device, an electronic device, and a lighting device can be provided. Alternatively, a light emitting device, an electronic device, and a lighting device having low power consumption can be provided. Further, it is possible to provide a light emitting device, an electronic device and a lighting device having low power consumption and high reliability. The description of these effects does not preclude the existence of other effects. It should be noted that one aspect of the present invention does not necessarily have to have all of these effects. It should be noted that the effects other than these are naturally clarified from the description of the description, drawings, claims, etc., and it is possible to extract the effects other than these from the description of the description, drawings, claims, etc. Is.

The figure explaining the light emitting element. The figure explaining the light emitting mechanism of a light emitting element. The figure explaining the light emitting mechanism of a light emitting element. The figure explaining the light emitting mechanism of a light emitting element. The figure explaining the light emitting device. The figure explaining the light emitting device. The figure explaining the electronic device. The figure explaining the electronic device. The figure explaining the lighting equipment. The figure explaining the light emitting device. The figure which shows an example of the touch panel which concerns on embodiment. The figure which shows an example of the touch panel which concerns on embodiment. The figure which shows an example of the touch panel which concerns on embodiment. A block diagram and a timing chart diagram of the touch sensor. Circuit diagram of the touch sensor. The figure which shows the luminance-current density characteristic of a light emitting element 1 to a light emitting element 3. The figure which shows the current efficiency-luminance characteristic of a light emitting element 1 to a light emitting element 3. The figure which shows the luminance-voltage characteristic of a light emitting element 1 to a light emitting element 3. The figure which shows the current-voltage characteristic of a light emitting element 1 to a light emitting element 3. The figure which shows the chromaticity coordinates of a light emitting element 1 to a light emitting element 3. The figure which shows the luminance-current density characteristic of the comparative light emitting element 1 to the comparative light emitting element 3. The figure which shows the current efficiency-luminance characteristic of the comparative light emitting element 1 to the comparative light emitting element 3. The figure which shows the luminance-voltage characteristic of the comparative light emitting element 1 to the comparative light emitting element 3. The figure which shows the current-voltage characteristic of the comparative light emitting element 1 to the comparative light emitting element 3. The figure which shows the chromaticity coordinates of the comparative light emitting element 1 to the comparative light emitting element 3. Emission spectrum of 1,6BnfAPrn-03 in a toluene solution. The figure explaining the structure of a light emitting element. The figure which shows the luminance-current density characteristic of a light emitting element 4 to a light emitting element 7. The figure which shows the current efficiency-luminance characteristic of a light emitting element 4 to a light emitting element 7. The figure which shows the luminance-voltage characteristic of a light emitting element 4 to a light emitting element 7. The figure which shows the current-voltage characteristic of a light emitting element 4 to a light emitting element 7. The figure which shows the chromaticity coordinates of a light emitting element 4 to a light emitting element 7. The figure which shows the luminance-current density characteristic of the comparative light emitting element 4 to the comparative light emitting element 6. The figure which shows the current efficiency-luminance characteristic of the comparative light emitting element 4 to the comparative light emitting element 6. The figure which shows the luminance-voltage characteristic of the comparative light emitting element 4 to the comparative light emitting element 6. The figure which shows the current-voltage characteristic of the comparative light emitting element 4 to the comparative light emitting element 6. Display of the light emitting device of the embodiment. Comparison of power consumption. The figure which shows the luminance-current density characteristic of a light emitting element 8 and a light emitting element 9. The figure which shows the current efficiency-luminance characteristic of a light emitting element 8 and a light emitting element 9. The figure which shows the luminance-voltage characteristic of a light emitting element 8 and a light emitting element 9. The figure which shows the current-voltage characteristic of a light emitting element 8 and a light emitting element 9. The figure which shows the emission spectrum of the light emitting element 8 and the light emitting element 9. The figure which shows the standardized luminance-time change characteristic of a light emitting element 8 and a light emitting element 9.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and its form and details can be variously changed without departing from the gist and scope of the present invention. Therefore, the present invention is not construed as being limited to the description of the embodiments shown below.

The word "membrane" and the word "layer" can be interchanged with each other in some cases or depending on the situation. For example, it may be possible to change the term "conductive layer" to the term "conductive layer". Alternatively, for example, it may be possible to change the term "insulating film" to the term "insulating layer".

(Embodiment 1)
The light emitting device according to one aspect of the present invention uses a light emitting element formed by sandwiching an EL layer including a light emitting layer between a pair of electrodes. The light emitting element has various structures such as a structure in which one EL layer is provided between a pair of electrodes (single structure) and a structure in which a plurality of EL layers are laminated with a charge generation layer interposed therebetween (tandem structure). be able to. Hereinafter, as an example of the element structure of the light emitting element, EL
A tandem light emitting device having two layers will be described as an example with reference to FIG. 1 (A).

In the light emitting element shown in FIG. 1 (A), two EL layers (103a, 103b) including a light emitting layer are sandwiched between a pair of electrodes (first electrode 101, second electrode 102), and each EL. Layer (103a
, 103b) are hole injection layers (104a, 104b) from the first electrode 101 side.
, Hole transport layers (105a, 105b), light emitting layers (106a, 106b), electron transport layers (107a, 107b), electron injection layers (108a, 108b) and the like are sequentially laminated. Further, a charge generation layer 109 is provided between the EL layer 103a and the EL layer 103b.

The light emitting layer (106a, 106b) contains a plurality of substances including a light emitting substance in an appropriate combination, and can be configured to obtain fluorescent light emission or phosphorescent light emission exhibiting a desired light emitting color. Further, a light emitting layer containing a different light emitting substance may be further laminated on each light emitting layer (106a, 106b).

Further, when a voltage is applied to the first electrode 101 and the second electrode 102, the charge generation layer 109 injects electrons into one EL layer (103a or 103b) and the other EL layer (103b).
Alternatively, it has a function of injecting holes into 103a). Therefore, in FIG. 1A, when a voltage is applied to the first electrode 101 so that the potential is higher than that of the second electrode 102, electrons are injected from the charge generation layer 109 into the EL layer 103a, and the EL layer 103b Holes will be injected into.

The charge generation layer 109 is transparent to visible light from the viewpoint of light extraction efficiency (specifically, the transmittance of visible light to the charge generation layer 109 is 40% or more). preferable. Further, the charge generation layer 109 functions even if the conductivity is lower than that of the first electrode 101 and the second electrode 102.

Further, in the light emitting element shown in FIG. 1A, the light emitted from each light emitting layer (106a, 106b) included in each EL layer (103a, 103b) in all directions is a micro optical resonator (microcavity). ), A first electrode (reflecting electrode) 101, and a second electrode ()
It can be resonated with the semi-transmissive / semi-reflective electrode) 102. Then, it is eventually ejected from the second electrode 102 side. Although the first electrode 101 is a reflective electrode, it has a laminated structure of a conductive material having reflectivity and a transparent conductive film, and optical adjustment is performed by controlling the film thickness of the transparent conductive film. There is. In some cases, optical adjustment can be performed by controlling the film thickness of the hole injection layer 104a contained in the EL layer 103a.

By controlling the film thickness of the first electrode 101 and the hole injection layer 104a to perform optical adjustment in this way, the spectra of a plurality of monochromatic lights obtained from each light emitting layer (106a, 106b) can be obtained. It is possible to narrow the line and obtain light emission with good color purity.

Further, in the light emitting element shown in FIG. 1A, the optical distance between the light emitting region in the EL layer 103b closest to the second electrode 102 functioning as the semitransmissive / semireflective electrode and the second electrode 102 is the said. It is preferable to form the light so that it is less than λ / 4 with respect to the wavelength λ of the light emitted in the light emitting region. The light emitting region referred to here indicates a recombination region between holes and electrons. By forming in this way, standard white light can be obtained from the combined emission of a plurality of monochromatic lights obtained from the light emitting layers (106a, 106b) of the light emitting element shown in FIG. 1 (A). The emission colors obtained from each light emitting layer (106a, 106b) include blue (for example, having a peak in the emission spectrum between 400 nm and 480 nm, more preferably between 450 nm and 470 nm), and green (for example,). Between 500 nm and 560 nm, more preferably 520
Has a peak in the emission spectrum between nm and 555 nm), red (eg 580 n)
It has a peak in the emission spectrum between m and 680 nm, more preferably between 600 nm and 620 nm), orange (eg, between 580 nm and 610 nm, more preferably 6).
Has a peak in the emission spectrum between 00 nm and 610 nm), yellow (eg 55)
It has a peak in the emission spectrum between 5 nm and 590 nm, more preferably between 570 nm and 580 nm). Further, when a specific combination of emission colors obtained from each of the light emitting layers (106a, 106b) is represented by "106a \ 106b", for example, "blue \ green", "blue \ yellow", "blue \ red". , "Green \ blue", "green \ yellow", "green \ red", "red \ blue", "red \ green", "red \ yellow" and the like.

Next, a specific example for manufacturing the above-mentioned light emitting element will be described.

Since the first electrode 101 is a reflective electrode, it is formed of a conductive material having reflectivity, and the reflectance of visible light to the film is 40% or more and 100% or less, preferably 70% or more and 10%.
It is assumed that the film has a resistivity of 0% or less and a resistivity of 1 × ^{10-2 Ωcm or less.} The second electrode 102 is formed of a conductive material having reflectivity and a conductive material having light transmittance, and has a visible light reflectance of 20% or more and 80% or less, preferably 40% or more and 70%. It is assumed that the film has the following and has a resistivity of 1 × 10 ^{-2 Ωcm or less.}

Further, among the light from each light emitting layer (106a, 106b), the first electrode 101 and the second electrode 101 and the second electrode 101 and the second electrode 101 for each wavelength of the desired light can be resonated and the wavelength of the light can be strengthened. The optical distance from the electrode 102 of the above is adjusted. Specifically, the film thickness of the transparent conductive film used for a part of the first electrode 101 is changed so that the distance between the electrodes is mλ / 2 (where m is a natural number) with respect to the desired wavelength λ of light. Adjust so that.

Further, in order to amplify the light having a desired wavelength among the light from each light emitting layer (106a, 106b), the optical distance between the first electrode 101 and the light emitting layer that emits the desired light is adjusted. Specifically, the film thickness of the transparent conductive film that can be used for a part of the first electrode 101 or the organic film that forms the hole injection layer 104a is changed with respect to the desired light wavelength λ. Then, the optical distance is adjusted to be (2 m'+ 1) λ / 4 (where m'is a natural number).

In the above case, strictly speaking, the optical distance between the first electrode 101 and the second electrode 102 is the first.
It can be said that the total thickness from the reflection region of the electrode 101 to the reflection region of the second electrode 102. However, since it is difficult to precisely determine the reflection region of the first electrode 101 and the second electrode 102, it is assumed that arbitrary positions of the first electrode 101 and the second electrode 102 are reflection regions. It is assumed that the above-mentioned effect can be sufficiently obtained. Further, the optical distance between the first electrode 101 and the light emitting layer that emits desired light is, strictly speaking, the optical distance between the reflection region of the first electrode 101 and the light emitting region of the light emitting layer that emits desired light. It can be said that it is a distance. However, since it is difficult to precisely determine the reflection region in the first electrode 101 and the light emission region in the light emitting layer, an arbitrary position of the first electrode 101 is set as the reflection region.
It is assumed that the above-mentioned effect can be sufficiently obtained by assuming that an arbitrary position of the light emitting layer that emits desired light is a light emitting region.

The materials forming the first electrode 101 and the second electrode 102 include metals, alloys, and the like.
An electrically conductive compound, a mixture thereof, and the like can be appropriately used. In particular,
Indium-tin oxide, indium-tin oxide containing silicon or silicon oxide, indium-zinc oxide (Indium Z)
inc Oxide), indium oxide containing tungsten oxide and zinc oxide, gold (
Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), titanium ( In addition to Ti), elements belonging to Group 1 or Group 2 of the Periodic Table of the Elements, that is, lithium (
Alkali metals such as Li) and cesium (Cs), alkaline earth metals such as calcium (Ca) and strontium (Sr), magnesium (Mg), and alloys containing these (M).
Rare earth metals such as gAg, AlLi), europium (Eu), ytterbium (Yb), alloys containing these, graphene and the like can be used. The first electrode 1
The 01 and the second electrode 102 are, for example, a sputtering method or a vapor deposition method (including a vacuum vapor deposition method).
It can be formed by such as.

The hole injection layers (104a, 104b) are hole transport layers (105a, 105) having high hole transport properties.
It is a layer for injecting holes into the light emitting layer (106a, 106b) via b), and acceptor materials such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide can be used. .. In addition, phthalocyanine compounds such as phthalocyanine (abbreviation: H ₂ Pc) and copper phthalocyanine (CuPC), 4,4'-bis [N- (4)
-Diphenylaminophenyl) -N-Phenylamino] Biphenyl (abbreviation: DPAB),
N, N'-bis {4- [bis (3-methylphenyl) amino] phenyl} -N, N'-diphenyl- (1,1'-biphenyl) -4,4'-diamine (abbreviation: DNTPD), etc. aromatic amine compounds, _{7,7,8,8-(abbreviation:} F 4 -TCNQ), chloranil, 2,3,6,7,10, 11-Hexacyano-1,4,5,8,9,12-Hexaazatriphenylene (abbreviation: HAT-CN)
) And other compounds with electron-withdrawing groups (halogen and cyano groups), or organic acceptor materials such as poly (3,4-ethylenedioxythiophene) / poly (styrene sulfonic acid) (abbreviation: PEDOT / PSS). Pore injection layers (104a, 104b) can be formed.

Further, the hole injection layer (104a, 104b) may be formed by containing a hole transporting material and an acceptor substance. By including the hole transporting material and the acceptor substance, the acceptor substance pulls out electrons from the hole transporting material to generate holes (holes), and the holes are generated through the hole transport layers (105a and 105b). Holes are injected into the light emitting layers (106a, 106b). The hole transport layers (105a, 105b) are formed by using a hole transport material.

Examples of the hole-transporting material used for the hole-injecting layer (104a, 104b) and the hole-transporting layer (105a, 105b) include 4,4'-bis [N- (1-naphthyl) -N-phenylamino. ] Biphenyl (abbreviation: NPB or α-NPD) and N, N'-bis (3-methylphenyl) -N, N'-diphenyl- [1,1'-biphenyl] -4,4'-diamine (abbreviation: TPD), 4,4', 4''-tris (carbazole-9-yl) triphenylamine (abbreviation: TCTA), 4,4', 4''-tris (N, N-diphenylamino) triphenylamine (Abbreviation: TDATA), 4,4', 4''-Tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 4,4'-
Aromatic amine compounds such as bis [N- (spiro-9,9'-bifluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: BSPB), 3- [N- (9-phenylcarbazole-3-3) Il) -N-Phenylamino] -9-Phenylcarbazole (abbreviation: PCz)
PCA1), 3,6-bis [N- (9-phenylcarbazole-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA2), 3- [N- (1-naphthyl) -N -(9-Phenylcarbazole-3-yl) amino] -9-Phenylcarbazole (abbreviation: PCzPCN1) and the like can be mentioned. In addition, 4,4'-di (N-carbazolyl) biphenyl (abbreviation: CBP), 1,3,5-tris [4- (N-carbazolyl) phenyl] benzene (abbreviation: TCPB), 9- [4- ( 10-Phenyl-9-anthracenyl) phenyl] -9H-carbazole (abbreviation: CzPA) and other carbazole derivatives can be used. The substances described here are mainly substances having a hole mobility of ^10-6 cm ^{2 / Vs or more.} However, any substance other than these may be used as long as it is a substance having a higher hole transport property than electrons.

Furthermore, poly (N-vinylcarbazole) (abbreviation: PVK), poly (4-vinyltriphenylamine) (abbreviation: PVTPA), poly [N- (4- {N'-[4- (4-diphenylamino)) Phenyl] phenyl-N'-phenylamino} phenyl) methacrylamide] (
Polymer compounds such as poly [N, N'-bis (4-butylphenyl) -N, N'-bis (phenyl) benzidine] (abbreviation: Poly-TPD) can also be used.

Further, as the acceptor substance used for the hole injection layer (105a, 105b), the above-mentioned acceptor material or organic acceptor material can be used. Among them, oxides of metals belonging to Groups 4 to 8 in the Periodic Table of the Elements, particularly molybdenum oxide, are preferable.

The light emitting layer (106a, 106b) is a layer containing a light emitting substance. The light emitting layer (106a,
106b) is composed of one or both of an electron-transporting material and a hole-transporting material, which are organic compounds, in addition to the light-emitting substance.
A fluorescent substance having a peak wavelength of the emission spectrum in a toluene solution of 440 nm to 460 nm, preferably 440 nm to 455 nm on either one of the light emitting layers (106a and 106b), or two benzo [b] naphthos on the pyrene skeleton. [1,2-d] An organic compound having a structure in which a furanylamine skeleton is bound is contained. The fluorescent substance is preferably a fluorescent substance having a half-value width of 20 nm or more and 50 nm or less in the emission spectrum.

As the fluorescent light emitting substance having a peak wavelength of the emission spectrum in the toluene solution of 440 nm to 460 nm, for example, a substance having an aromatic diamine skeleton is preferable.
More preferably, a substance having a pyrene diamine skeleton is preferable. More specifically, the substance has two benzo [b] naphthos [b] on a pyrene skeleton represented by the following general formula (G1).
1,2-d] Organic compounds having a structure in which a furanylamine skeleton is bonded are preferable. The fluorescent substance that can be used in the present embodiment is not limited to the following examples.

As the organic compound having a structure in which two benzo [b] naphtho [1,2-d] flanylamine skeletons are bonded to the pyrene skeleton, an organic compound represented by the following general formula (G1) can be used. .. The organic compound represented by the following general formula (G1) exhibits blue fluorescence emission.

In the general formula (G1), Ar ¹ and Ar ² each independently represent an aryl group having 6 to 13 carbon atoms forming a substituted or unsubstituted ring, and R ^{1 to} R ⁸ and R ^{10 to} R ^{18 respectively.} And R ^{20 to} R ²⁸ are independently hydrogen, substituted or unsubstituted alkyl groups having 1 to 6 carbon atoms, substituted or unsubstituted alkoxy groups having 1 to 6 carbon atoms, cyano groups, halogens, substituted or absent. It represents a substituted haloalkyl group having 1 to 6 carbon atoms or a substituted or unsubstituted aryl group having 6 to 10 carbon atoms.

Specific examples of the organic compound represented by the general formula (G1) will be described in detail in the second embodiment.

Further, on the other side of the light emitting layer (106a, 106b), the material that can be used as a luminescent material is not particularly limited, and is a luminescent material that converts singlet excitation energy into light emission in the visible light region, or triplet excitation. Luminescent materials that convert energy into light emission in the visible light region can be used.

Examples of the luminescent material that converts the single-term excitation energy into light emission in the visible light region include substances that emit fluorescence, and examples thereof include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, and dibenzofuran derivatives. Examples thereof include dibenzoquinoxaline derivatives, quinoxalin derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives and naphthalene derivatives. In particular, the pyrene derivative is preferable because it has a high emission quantum yield. Specific examples of the pyrene derivative include N, N'-bis (3).
-Methylphenyl) -N, N'-bis [3- (9-phenyl-9H-fluorene-9-yl) phenyl] pyrene-1,6-diamine (1,6 mMEmFLPAPrn), N, N'
-Bis [4- (9-phenyl-9H-fluorene-9-yl) phenyl] -N, N'-diphenylpyrene-1,6-diamine (1,6FLPAPrn), N, N'-bis (dibenzofuran-2) -Il) -N, N'-diphenylpyrene-1,6-diamine (1,6FrA)
Prn), N, N'-bis (dibenzothiophen-2-yl) -N, N'-diphenylpyrene-1,6-diamine (1,6ThhAPrn) and the like.

Further, as a luminescent material that converts triplet excitation energy into light emission in the visible light region, for example,
Examples include materials that emit phosphorescence and thermally activated delayed fluorescence (TADF) materials that exhibit thermally activated delayed fluorescence. The TADF material is a material that can up-convert the triplet excited state to the singlet excited state (intersystem crossing) with a small amount of heat energy and efficiently exhibit light emission (fluorescence) from the singlet excited state. That is. Further, as a condition for efficiently obtaining thermally activated delayed fluorescence, the energy difference between the triplet excited level and the singlet excited level is 0 eV or more and 0.2 eV or less, preferably 0 eV or more and 0.1 eV or less. Can be mentioned. In addition, delayed fluorescence in TADF materials refers to emission that has a spectrum similar to that of normal fluorescence but has a significantly long lifetime. Its life is ^10-6 seconds or longer, preferably ^10-3 seconds or longer.

Examples of the phosphorescent substance include iridium, rhodium, or platinum-based organic metal complexes, or metal complexes, and among them, organic iridium complexes, for example, iridium-based orthometal complexes are preferable. As a ligand for orthometallation, a 4H-triazole ligand, 1H-
Examples thereof include a triazole ligand, an imidazole ligand, a pyridine ligand, a pyrimidine ligand, a pyrazine ligand, and an isoquinoline ligand. Examples of the metal complex include a platinum complex having a porphyrin ligand. Specifically, the screw [2- (3', 5'-)
Bistrifluoromethylphenyl) pyridinato-N, C ^2' ] Iridium (III) picolinate (abbreviation: Ir (CF ₃ ppy) ₂ (pic)), bis [2- (4', 6'-difluorophenyl) pyridinato-N , C ^2' ] Iridium (III) Acetylacetonate (abbreviation: FIracac), Tris (2-phenylpyridinato) Iridium (III) (
Abbreviation: Ir (ppy) ₃ ), bis (2-phenylpyridinato) iridium (III) acetylacetonate (abbreviation: Ir (ppy) ₂ (acac)), tris (acetylacetonato) (monophenanthroline) terbium ( III) (Abbreviation: Tb (acac) ₃ (Ph)
en)), bis (benzo [h] quinolinato) iridium (III) acetylacetonate (abbreviation: Ir (bzq) ₂ (acac)), bis (2,4-diphenyl-1,3-oxazolato-N, C ^{2) '} ) Iridium (III) Acetylacetoneate (abbreviation: Ir (dpo)
) ₂ (acac)), bis {2- [4'-(perfluorophenyl) phenyl] pyridinato-N, C ^2' } iridium (III) acetylacetonate (abbreviation: Ir (p-PF-)
ph) ₂ (acac)), bis (2-phenylbenzothiazolato-N, C ^2' ) iridium (III) acetylacetonate (abbreviation: Ir (bt) ₂ (acac)), bis [2-
(2'-benzo [4,5-α] thienyl) pyridinato-N, C ^3' ] iridium (III
) Acetylacetoneate (abbreviation: Ir (btp) ₂ (acac)), bis (1-phenylisoquinolinato-N, C ^2' ) iridium (III) acetylacetonate (abbreviation: Ir)
(Piq) ₂ (acac)), (acetylacetoneto) bis [2,3-bis (4-fluorophenyl) quinoxalinato] iridium (III) (abbreviation: Ir (Fdpq) ₂ (ac)
ac))), (acetylacetonato) bis (3,5-dimethyl-2-phenylpyrazinato)
Iridium (III) (abbreviation: [Ir (mppr-Me) ₂ (acac)]), (acetylacetone) bis (5-isopropyl-3-methyl-2-phenylpyrazinato) iridium (III) (abbreviation: [Ir (mppr-iPr) ₂ (acac)]), (acetylacetoneto) bis (2,3,5-triphenylpyrazinato) iridium (III) (abbreviation:
Ir (tppr) ₂ (acac)), bis (2,3,5-triphenylpyrazinato) (dipivaloylmethanato) iridium (III) (abbreviation: [Ir (tppr) ₂ (dpm)]
), (Acetylacetonato) Bis (6-tert-butyl-4-phenylpyrimidinato)
Iridium (III) (abbreviation: [Ir (tBuppm) ₂ (acac)]), (acetylacetone) bis (4,6-diphenylpyrimidinato) iridium (III) (abbreviation: [
Ir (dppm) ₂ (acac)]), 2,3,7,8,12,13,17,18-octaethyl-21H, 23H-porphyrin platinum (II) (abbreviation: PtOEP), Tris (abbreviation: PtOEP)
1,3-Diphenyl-1,3-Propanedionato) (monophenanthroline) Europium (III) (abbreviation: Eu (DBM) ₃ (Phen)), Tris [1- (2-tenoyl))
-3,3,3-trifluoroacetonato] (monophenanthroline) Europium (II
I) (abbreviation: Eu (TTA) ₃ (Phen)) and the like.

Examples of the TADF material include fullerenes and derivatives thereof, acridine derivatives such as proflavine, and eosin. Examples thereof include metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd) and the like. Examples of the metal-containing porphyrin include a protoporphyrin-tin fluoride complex (SnF ₂ (Proto IX)), a mesoporphyrin-tin fluoride complex (SnF ₂ (Meso IX)), and a hematoporphyrin-tin fluoride complex (SnF). ₂ (Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF ₂ (Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF ₂ (OEP)), etioporphyrin-tin fluoride Complex (SnF ₂ (Etio I)), Octaethylporphyrin-platinum chloride complex (P)
tCl ₂ OEP) and the like. In addition, 2- (biphenyl-4-yl) -4,6-bis (12-phenylindro [2,3-a] carbazole-11-yl) -1,3,5-
Heterocyclic compounds having a π-electron excess heteroaromatic ring and a π-electron deficiency heteroaromatic ring such as triazine (PIC-TRZ) can also be used. A substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded has a stronger donor property of the π-electron-rich heteroaromatic ring and a stronger acceptability of the π-electron-deficient heteroaromatic ring. , S ₁ and T ₁ are particularly preferable because the energy difference is small.

On the other side of the light emitting layer (106a, 106b), as a material that can be used as a light emitting material, it is preferable to use a light emitting material that converts triplet excitation energy into light emission in the visible light region, and more preferably yellow. It is advisable to use a phosphorescent substance that exhibits phosphorescence. By having this configuration, a power-saving light emitting element can be obtained. Further, when the light emitting element is used as a display element constituting the light emitting device, the power consumption for obtaining white light emission can be effectively reduced.

When an electron transporting material is used as the organic compound used for the light emitting layer (106a, 106b), a π-electron-deficient heteroaromatic compound such as a nitrogen-containing heteroaromatic compound is preferable, and for example, 2- [3-( Dibenzothiophen-4-yl) phenyl] dibenzo [f, h] quinoxalin (abbreviation: 2mDBTPDBq-II), 2- [3'-(dibenzothiophen-4-yl) biphenyl-3-yl] dibenzo [f, h] Kinoxalin (abbreviation: 2mDBTBPD)
Bq-II), 2- [4- (3,6-diphenyl-9H-carbazole-9-yl) phenyl] dibenzo [f, h] quinoxaline (abbreviation: 2CzPDBq-III), 7- [3- [3-
(Dibenzothiophen-4-yl) Phenyl] Dibenzo [f, h] Quinoxaline (abbreviation:
Examples thereof include quinoxaline or dibenzoquinoxaline derivatives such as 7mDBTPDBq-II) and 6- [3- (dibenzothiophen-4-yl) phenyl] dibenzo [f, h] quinoxaline (abbreviation: 6mDBTPDBq-II).

When a hole-transporting material is used as the organic compound used for the light emitting layer (106a, 106b), a π-electron-rich heterocyclic compound (for example, a carbazole derivative or an indole derivative) or an aromatic amine compound is preferable, for example. , 4-Phenyl-4'-(9-Phenyl-)
9H-carbazole-3-yl) triphenylamine (abbreviation: PCBA1BP), 4,4
'-Di (1-naphthyl) -4''-(9-phenyl-9H-carbazole-3-yl) triphenylamine (abbreviation: PCBNBB), 3- [N- (1-naphthyl) -N- (9) -Phenylcarbazole-3-yl) amino] -9-Phenylcarbazole (abbreviation: PCzP)
CN1), 4,4', 4''-tris [N- (1-naphthyl) -N-phenylamino] triphenylamine (abbreviation: 1'-TNATA), 2,7-bis [N- (4- (4-)4- Diphenylaminophenyl) -N-Phenylamino] -Spiro-9,9'-bifluorene (abbreviation: DP)
A2SF), N, N'-bis (9-phenylcarbazole-3-yl) -N, N'-diphenylbenzene-1,3-diamine (abbreviation: PCA2B), N- (9,9-dimethyl-2)
-Diphenylamino-9H-Fluorene-7-yl) Diphenylamine (abbreviation: DPNF)
), N, N', N''-triphenyl-N, N', N''-tris (9-phenylcarbazole-3-yl) benzene-1,3,5-triamine (abbreviation: PCA3B), 2 -[N
-(9-Phenylcarbazole-3-yl) -N-Phenylamino] Spiro-9,9'-
Bifluorene (abbreviation: PCASF), 2- [N- (4-diphenylaminophenyl) -N
-Phenylamino] Spiro-9,9'-bifluorene (abbreviation: DPASF), N, N'-
Bis [4- (carbazole-9-yl) phenyl] -N, N'-diphenyl-9,9-dimethylfluorene-2,7-diamine (abbreviation: YGA2F), 4,4'-bis [N- (3)
-Methylphenyl) -N-Phenylamino] biphenyl (abbreviation: TPD), 4,4'-bis [N- (4-diphenylaminophenyl) -N-phenylamino] biphenyl (abbreviation: abbreviation:
DPAB), N- (9,9-dimethyl-9H-fluorene-2-yl) -N- {9,9-
Dimethyl-2- [N'-Phenyl-N'-(9,9-Dimethyl-9H-Fluorene-2-)
Il) Amino] -9H-Fluorene-7-Il} Phenylamine (abbreviation: DFLADFL)
), 3- [N- (9-Phenylcarbazole-3-yl) -N-Phenylamino] -9-
Phenylcarbazole (abbreviation: PCzPCA1), 3- [N- (4-diphenylaminophenyl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzDPA1)
, 3,6-bis [N- (4-diphenylaminophenyl) -N-phenylamino] -9-
Phenylcarbazole (abbreviation: PCzDPA2), 4,4'-bis (N- {4- [N'-]
(3-Methylphenyl) -N'-Phenylamino] phenyl} -N-Phenylamino) Biphenyl (abbreviation: DNTPD), 3,6-bis [N- (4-diphenylaminophenyl)
-N- (1-naphthyl) amino] -9-Phenylcarbazole (abbreviation: PCzTPN2)
, 3,6-bis [N- (9-phenylcarbazole-3-yl) -N-phenylamino]
-9-Phenylcarbazole (abbreviation: PCzPCA2) can be mentioned.

When the luminescent substance used for the light emitting layer is a substance that emits phosphorescence, the organic compound used for the light emitting layer includes zinc and aluminum-based metal complexes, as well as oxadiazole derivatives, triazole derivatives, benzoimidazole derivatives, quinoxalin derivatives, and dibenzoquinoxalin derivatives. , Dibenzothiophene derivatives, dibenzofuran derivatives, pyrimidine derivatives, triazine derivatives,
In addition to pyridine derivatives, bipyridine derivatives, phenanthroline derivatives and the like, aromatic amines and carbazole derivatives and the like can be mentioned.

Further, when the light-emitting substance used for the light-emitting layer is a substance which fluoresces, as the organic compound used for the light-emitting layer, S ₁ level is large, T ₁ level is less anthracene derivative or a tetracene derivative, are preferred. Specifically, 9-phenyl-3- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazole (PCzPA), 9- [4- (10-phenyl-9-anthrasenyl) phenyl]- 9H-carbazole (CzPA), 7- [4- (
10-Phenyl-9-anthryl) phenyl] -7H-dibenzo [c, g] carbazole (cgDBCzPA), 6- [3- (9,10-diphenyl-2-anthryl) phenyl] -benzo [b] naphtho [1 , 2-d] Fran (2mBnfPPA), 9-Phenyl-1
0- {4- (9-Phenyl-9H-fluorene-9-yl) biphenyl-4'-yl} anthracene (FLPPA), 5,12-diphenyltetracene, 5,12-bis (biphenyl-2-yl) tetracene And so on.

The electron transport layer (107a, 107b) is a layer containing a substance having a high electron transport property. The electron transport layers (107a, 107b) include Alq ₃ , tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), and bis (10-hydroxybenzo [h] quinolinato) berylium (abbreviation: BeBq ₂ ). , BAlq, Zn (BOX) ₂ , bis [2- (2-hydroxyphenyl) benzothiazolato] zinc (abbreviation: Zn (BTZ) ₂ ) and other metal complexes can be used. In addition, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (pt-pt).
ert-butylphenyl) -1,3,4-oxadiazole-2-yl] benzene (abbreviation: OXD-7), 3- (4-tert-butylphenyl) -4-phenyl-5- (4-biphenylyl) ) -1,2,4-triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4-ethylphenyl) -5- (4-biphenylyl) -1,2,4-
Triazole (abbreviation: p-EtTAZ), vasofenanthroline (abbreviation: BPhen),
Basocuproin (abbreviation: BCP), 4,4'-bis (5-methylbenzoxazole-)
Heteroaromatic compounds such as 2-yl) stilbene (abbreviation: BzOs) can also be used. In addition, poly (2,5-pyridinediyl) (abbreviation: PPy), poly [(9,9-dihexylfluorene-2,7-diyl) -co- (pyridine-3,5-diyl)] (abbreviation: PF).
-Py), poly [(9,9-dioctylfluorene-2,7-diyl) -co- (2,2)
Polymer compounds such as'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy) can also be used. The substances described here are mainly ^{substances having electron mobility of 1 × 10-6} cm ² / Vs or more. A substance other than the above may be used as the electron transport layer (107a, 107b) as long as it is a substance having a higher electron transport property than holes.

Further, the electron transport layer (107a, 107b) may be not only a single layer but also a layer in which two or more layers made of the above substances are laminated.

The electron injection layer (108a, 108b) is a layer containing a substance having a high electron injection property. Lithium fluoride (LiF) and cesium fluoride (CsF) are used in the electron injection layers (108a, 108b).
, Calcium fluoride (CaF ₂ ), alkali metals such as lithium oxide (LiO _x ), alkaline earth metals, or compounds thereof can be used. In addition, rare earth metal compounds such as erbium fluoride (ErF _{3) can be used.} Also, the electron injection layer (
Electride may be used for 108a, 108b). Examples of the electride include a substance in which a high concentration of electrons is added to a mixed oxide of calcium and aluminum. In addition, the substance constituting the above-mentioned electron transport layer (107a, 107b) can also be used.

Further, a composite material formed by mixing an organic compound and an electron donor (donor) may be used for the electron injection layer (108a, 108b). Such a composite material is excellent in electron injection property and electron transport property because electrons are generated in the organic compound by the electron donor. In this case, the organic compound is preferably a material excellent in transporting generated electrons, specifically, specifically.
For example, substances (metal complexes, heteroaromatic compounds, etc.) constituting the above-mentioned electron transport layers (107a, 107b) can be used. The electron donor may be any substance that exhibits electron donating property to the organic compound. Specifically, alkali metals, alkaline earth metals and rare earth metals are preferable, and lithium, cesium, magnesium, calcium, erbium, ytterbium and the like can be mentioned. Further, alkali metal oxides and alkaline earth metal oxides are preferable, and lithium oxides, calcium oxides, barium oxides and the like can be mentioned. A Lewis base such as magnesium oxide can also be used. In addition, Tetrathiafulvalen (abbreviation: T)
Organic compounds such as TF) can also be used.

In the light emitting element shown in the present embodiment, the EL layer 103b closest to the second electrode 102
It is preferable that the optical distance between the light emitting region and the second electrode 102 is less than λ / 4 with respect to the wavelength of the light emitted in the light emitting region. Therefore, the above-mentioned electron transport layer (1)
The thickness of the combined film thickness of 07b) and the electron injection layer (108b) is adjusted as appropriate, and the second electrode 102
The optical distance between the light emitting region in the EL layer 103b closest to the second electrode 102 and the second electrode 102 is λ /
It is preferable to form it so that it is less than 4.

Further, the charge generation layer 109 has a structure in which an electron acceptor is added to the hole transporting material, or an electron donor (donor) is added to the electron transporting material. good. Further, both of these configurations may be laminated.

In the case where an electron acceptor is added to the hole transporting material, the hole transporting material includes, for example, NPB, TPD, TDATA, MTDATA, 4,4'-bis [N- (spiro-9). , 9'-bifluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: abbreviation:
Aromatic amine compounds such as BSPB) can be used. The substances described here are mainly substances having a hole mobility of ^10-6 cm ^{2 / Vs or more.} However, a substance other than the above may be used as long as it is an organic compound having a higher hole transport property than electrons.

Further, as the electron acceptor, _{7,7,8,8-(abbreviation:} F 4 -TCNQ), chloranil, and the like HAT-CN, etc. can. Further, oxides of metals belonging to Group 4 to Group 8 in the Periodic Table of the Elements can be mentioned. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and renium oxide are preferable because they have high electron acceptability. Of these, molybdenum oxide is particularly preferable because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle.

On the other hand, in the case where an electron donor is added to the electron transporting material, the electron transporting material includes, for example, a metal complex having a quinoline skeleton or a benzoquinoline _{skeleton such as Alq, Almq 3 , BeBq 2, and BAlq.} Etc. can be used. In addition, Zn
Oxazole-based, thiazole-based ligands such as (BOX) ₂ and Zn (BTZ) ₂ and metal complexes having thiazole-based ligands can also be used. Furthermore, in addition to metal complexes, PBD, OXD-7, and T
AZ, BPhen, BCP and the like can also be used. The substances mentioned here are mainly 10 ^-
It is a substance having electron mobility of ⁶ cm ^{2 / Vs or more.} A substance other than the above may be used as long as it is an organic compound having a higher electron transport property than holes.

Further, as the electron donor, an alkali metal, an alkaline earth metal, a rare earth metal, a metal belonging to the second or thirteenth group in the periodic table of elements, an oxide thereof, or a carbonate can be used. Specifically, lithium (Li), cesium (Cs), magnesium (Mg)
, Calcium (Ca), Ytterbium (Yb), Indium (In), Lithium Oxide,
It is preferable to use cesium carbonate or the like. Further, an organic compound such as tetrathianaphthalene may be used as an electron donor.

By forming the charge generation layer 109 using the above-mentioned material, it is possible to suppress an increase in the drive voltage when the EL layers are laminated.

The hole injection layers (104a, 104b) and hole transport layers (105a, 105b) described above.
, Light emitting layer (106a, 106b), electron transport layer (107a, 107b), electron injection layer (1)
08a, 108b) and the charge generation layer 109 can be formed by a method such as a thin-film deposition method (including a vacuum vapor deposition method), an inkjet method, or a coating method, respectively.

In the present embodiment, the light emitting device having two EL layers has been described, but it is also possible to stack three or more EL layers.

As shown in FIG. 1B, the light emitting device of the present invention may be a single-structured device having a single EL layer. In this case, the light emitting layer 106 includes the first light emitting layer 106a and the second light emitting layer 106b. Other configurations shall be in accordance with the above description of layers having the same reference numerals.

In the case of a single structure, it is possible to improve the luminous efficiency by using a separate painting structure as shown in FIG. 27. The structure as shown in FIG. 27 can realize the same luminous efficiency as the light emitting element in which the light emitting layer is painted separately for each light emitting color (blue and yellow are painted twice) by painting only once. It is a structure that can be done.

The coating structure consists of the substrate 1100 and the first electrode (1102B) provided on the substrate 1100.
, 1102G, 1102R, 1102Y), second electrode 1104, black matrix 1
The 105, the color filter (1106B, 1106G, 1106R, 1106Y), and the sealing substrate 1101 are the same as those in FIG. The EL layer has a hole injection layer and a hole transport layer 1103e, a yellow light emitting layer 1103f, an electron transport layer and an electron injection layer 1103h common to all light emitting elements, and only the blue light emitting layer 1103d is painted separately to emit blue light. It is formed on the part of the element.

Here, the yellow light emitting layer 1103f and the blue light emitting layer 1103d adjust the carrier balance so that the recombination region is formed on the electrode side on which the painted light emitting layer (in this case, the blue light emitting layer) is located. In FIG. 27, the blue light emitting layer 1103d is painted separately, and the blue light emitting layer is formed on the first electrode (the anode) side of the yellow light emitting layer, so that both the blue light emitting layer and the yellow light emitting layer transport holes. Select the host material and luminescent material so that the electron transport property is higher than the property. With this configuration, only blue light emission can be obtained from the light emitting element on which the blue light emitting layer 1103d is formed, and only yellow light emission can be obtained from the other elements, and the efficiency is that the blue light emitting layer and the yellow light emitting layer are painted separately. It can be about the same as the element formed in.

Subsequently, since the light emitting element described above has a different light emitting mechanism depending on the configuration of the light emitting layer, the light emitting mechanism will be described with reference to FIGS. 2 to 4.

(1) First, a light emitting substance (guest material 121) and a first light emitting substance (guest material 121) are formed on the light emitting layer (106a or 106b).
Two types of light emitting mechanisms will be described when the light emitting substance (guest material 121) is a substance that emits fluorescence, including the organic compound (host material 122) of the above.

In the light emitting layer (106a or 106b), an excited state is formed by carrier recombination, but since the host material 122 is present in a larger amount than the guest material 121, the excited state is almost the same as that of the host material 122. It becomes an excited state. At this time, the ratio of the singlet excited state and the triplet excited state (hereinafter, exciton generation probability) generated by the carrier recombination is about 1: 3.

(I) but _{T 1} level of the host material 122 energy transfer to the guest material 121 from a triplet excited state of the host material 122 is higher than the _{T 1} level of the guest material 121 (triplet energy transfer) occurs, the guest Since the molecule is a fluorescent luminescent material, it is not possible to obtain light emission from the triplet excited state, and since the guest molecule is present in a small amount in the light emitting layer, triplet-triplet annihilation (TTA: Triplet-Triplet Animation). The triplet excited state of the guest molecule is thermally deactivated. Therefore, triplet excitons cannot be used for light emission, and only about 2 of the injected carriers can be used for light emission.
It will be 5%.

(Ii) _{T 1} level of the host material 122 is a host material 122 is lower than the _{T 1} level of the guest material 121, the correlation energy level of the guest material 121 is as shown in FIG. The notation and reference numerals in FIG. 2 are as follows.
-Guest: Guest material 121 (fluorescent material)
-Host: Host material 122
_-SFH : The lowest level of the singlet excited state of the _{host material 122-TFH} : The lowest level of the triplet excited state of the host material 122-S _FG : The singlet excited state of the guest material 121 (fluorescent material) The lowest level of _TFG : The lowest level of the triplet excited state of guest material 121 (fluorescent material) In this case, the triplet-triplet annihilation (TTA:) because many host molecules are present in the light emitting layer. T
riplet-Triplet Annihilation) a prone, is converted into a portion of the triplet excitons of the host material 122 is ultimately lowest level of the singlet excited state of the host material 122 _{(S FH).} Then, energy transfer occurs to the lowest level of the singlet excited state of the host material 122 (S _FH) from the lowest level of the singlet excited state of the guest material 121 (S _FG) (route A), the guest material 121 emits light.

Incidentally, _{T 1} level position of the host material 122 _{(T FH)} is, _{T 1} level position of the guest material 121 _{(T FG}
), So even if the carriers recombine directly in the guest material 121 to generate triplet excitons, the T ₁ level ( _TFG ) generated will be the T of the host material 122. ₁
Since the _{energy can be transferred to the level (TFH} ) (path B) and used for TTA, the luminous efficiency can be improved as compared with the case of (i) described above.

(2) Next, the light emitting substance (guest material 131) and the first
Organic compound 132 and a second organic compound 133, and is a luminescent substance (guest material 131).
The light emitting mechanism when is a substance that emits phosphorescence will be described. However, the first organic compound 1
32 functions as a so-called host material, and the weight ratio in the light emitting layer is higher than that of the second organic compound 133.

In the light emitting layer (106a or 106b), the combination of the first organic compound 132 and the second organic compound 133 may be any combination capable of forming an excited complex (also referred to as Exciplex) 134. It is more preferable that one is a material having a hole transporting property and the other is a material having an electron transporting property. In this case, it becomes easy to form a donor-acceptor type excited state, and the excited complex 134 can be efficiently formed. Further, when the first organic compound 132 and the second organic compound 133 are selected by the combination of the material having hole transporting property and the material having electron transporting property, the carrier balance is easily controlled by the mixing ratio thereof. be able to. Specifically, a material having hole transportability: a material having electron transportability = 1: 9 to 9: 1 (weight ratio) is preferable. Further, since the carrier balance can be easily controlled by having the configuration, the recombination region can be easily controlled.

Luminescent substance (guest material) 131, first organic compound 132, second organic compound 133
The correlation of the energy level with and is shown in FIG. The notation and reference numerals in FIG. 3 are as follows.
・ Guest: Guest material (phosphorescent material) 131
-First organic compound: First organic compound 132
-Second organic compound: Second organic compound 133
-Excited complex: Excited complex (exciplex) 134
・ S _PH : The lowest level of the singlet excited state of _{the first organic compound 132 ・ T PH} : The lowest level of the triplet excited state of the first organic compound 132 ・ T _PG : Guest material (phosphorescent material) the lowest level · S _E triplet excited state of _131: lowest level · T _E of the singlet excited state of the exciplex _134: in this case the lowest level of the triplet excited state of the exciplex 134, first The organic compound 132 and the second organic compound 133 form an excited complex 134. Further, the lowest level ( _SE ) of the singlet excited state of the excited complex 134 and the excited complex 134
The lowest level ( _TE ) of the triplet excited state of is close (path C).

The excited complex 134 is an excited state composed of two kinds of substances, and may be formed by photoexcitation or by electrical excitation. In the case of photoexcitation, one molecule in the excited state is formed by pairing with a molecule in the ground state of the other substance. In the case of electrical excitation, there are two possible elementary processes for forming an excited complex. One is the same elementary process as in the case of photoexcitation. The other is an elementary process in which an excited complex 134 is formed by the proximity of one cation molecule (hole) of two kinds of substances and the other anion molecule (electron).
At the start of light emission, the latter elementary process is dominant, so that the excited complex 134 can be formed without forming an excited state in either of the two kinds of substances. Therefore, the light emission start voltage can be lowered, and eventually the drive voltage can be reduced.

When exciplex 134 are formed, the lowest level of the singlet excited state of the exciplex 134 (S _{E
) And the lowest level (TE} ) of the triplet excited state of the excited complex 134, guest material 13
1 energy transfer (phosphorescent material) in the lowest level of the triplet excited state to (T _PG) occurs (route D), the guest material 131 emits light. The process of formation of the excited complex 134 (path C) and energy transfer (path D) from the excited complex 134 to the guest material 131 (phosphorescent material) is described by ExTET (Exciplex-Triplet Energy Transfer).
).

When the excited complex 134 loses energy and becomes a ground state, the two types of substances forming the excited complex 134 also behave as the original separate substances.

Depending on the combination of the first organic compound and the second organic compound forming the excitation complex,
It is also possible to make the guest material (fluorescent material) emit light by using a fluorescent material as the guest material and transferring energy from the excitation complex to the guest material (fluorescent material). The fluorescent material shall also include a thermally activated delayed fluorescent material.

(3) Next, one of the light emitting layers (106a or 106b) has a laminated structure, and the laminated structure is formed with a configuration showing the light emitting mechanism (TTA) described in (ii) of (1) above. A light emitting mechanism in the case where the first light emitting layer and the second light emitting layer formed in the configuration showing the light emitting mechanism (ExTET) described in the above (2) are in contact with each other will be described. Further, the correlation of energy levels in this case is shown in FIG. The notation and reference numerals in FIG. 4 are as follows.
First light emitting layer (fluorescence) 113: First light emitting layer 113
-Second light emitting layer (phosphorescence) 114: Second light emitting layer 114
_-SFH : The lowest level of the single-term excited state of the _{host material 122-TFH} : The lowest level of the triple-term excited state of the host material 122-S _FG : The single-term excited state of the guest material (fluorescent material) 121 The lowest level of T _FG : The lowest level of the triple-term excited state of the guest material (fluorescent material) 121 ・ S _PH : The lowest level of the single-term excited state of the first organic compound 132 ・ T _PH : The lowest level of the triple-term excited state of the first organic compound 132 ・ T _PG : The lowest level of the triple-term excited state of the guest material 131 (phosphorescent material) ・_SE : The single-term excited state of the excited complex 134 Lowest level ・_TE : The lowest level of the triple-term excited state of the excited complex 134

Since the excited complex 134 formed by the second light emitting layer 114 exists only in the excited state, exciton diffusion between the excited complex 134 and the excited complex 134 is unlikely to occur. Further, the excited level ( _{SE ) of the excited complex 134 is the singlet excited level (SPH} ) of the first organic compound 132 of the second light emitting layer 114 and the singlet excited level of the second organic compound. Because it is lower than either of
Diffusion of singlet excitation energy from the excitation complex 134 to the first organic compound 132 and the second organic compound also does not occur. Further, at the interface between the first light emitting layer 113 and the second light emitting layer 114, the excited complex 134 formed by the second light emitting layer 114 (the lowest level of the singlet excited state (the lowest level of the singlet excited state).
From S _E) or the lowest level of the triplet excited state _(T E)), the excitation level _(S FH of the host material 122 of the first light-emitting layer _113, the energy transfer (especially triplet excited to _{T FH)} When level energy transfer) occurs, the energy of the single-term excitation energy in the first light emitting layer 113 goes through a normal path, and a part of the triple-term excitation energy is TTA.
Since it is converted into light emission through the above, energy loss can be reduced. Further, since the diffusion of excitons in the excited complex does not occur, the energy transfer from the excited complex to the first light emitting layer 113 is limited to the interface.

Most of the excitons in the second light emitting layer 114 exist in the state of an excited complex, and exciton diffusion between the excited complexes 134 is unlikely to occur, which means that the first light emitting layer 11 which is a fluorescent light emitting layer 11
_{Even if the T 1} level of the host material 122 of 3 _{is lower than the T 1} level of the first organic compound 132 and the second organic compound 133 of the second light emitting layer 114, the second light emitting layer 114 It means that the luminous efficiency of is maintained. That is, according to this configuration, a condensed aromatic compound such as an anthracene derivative having a low triplet excitation level while being electrochemically stable and having good reliability can be used as a host material for the first light emitting layer 113. While using it, it is possible to efficiently obtain light emission from an adjacent phosphorescent light emitting layer. Therefore, the host material 122 of the first light emitting layer 113
The T ₁ level of is the first organic compound 132 and the second organic compound 13 of the second light emitting layer 114.
It is one of the features of this configuration that it is smaller than the T _{1 level of 3.}

In the first light emitting layer 113, _{S 1} level position of the host material 122 (not shown) is greater than _{S 1} level of the guest material 121, and, _{T 1} level position of the host material 122 _{(T FH)} Is preferably smaller than _{the T 1} level (T _FG ) of the guest material 121. With such a configuration, if the second light emitting layer 1 is formed at the interface between the first light emitting layer 113 and the second light emitting layer 114.
From the lowest level of the triplet excited state of the exciplex 134 formed (T _E) at 14, the lowest level energy to (T _FH) of the triplet excited state of the host material 122 of the first light-emitting layer 113 Even if movement occurs, a part of the energy is transferred by TTA to the first light emitting layer 113.
Since it can be converted into light emission in, energy loss can be reduced.

When the light emitting layer having the above-mentioned laminated structure is used, the light emission from the first light emitting layer 113 has a light emission peak on the shorter wavelength side than the light emission from the second light emitting layer 114. Is preferable. Since a light emitting element using a phosphorescent material that emits light of a short wavelength tends to deteriorate in brightness quickly, it is possible to provide a light emitting element having a small deterioration in brightness by converting the light emission of a short wavelength into fluorescent light emission. Because.

When the light emitting layer having the above-mentioned laminated structure is used, the first light emitting layer 113 and the second light emitting layer 113 and the second light emitting layer 113 are provided by providing a third layer between the first light emitting layer 113 and the second light emitting layer 114. Light emitting layer 1
The configuration may be such that the 14 and the 14 do not touch each other. With such a configuration, from the excited state of the first organic compound 132 or the guest material 131 (phosphorescent material) generated in the second light emitting layer 114, the host material 122 of the first light emitting layer 113, or Energy transfer (particularly triplet energy transfer) to the guest material 121 (fluorescent material) by the Dexter mechanism can be prevented. The third layer in such a configuration may be formed with a film thickness of about several nm.

Further, the third layer may be formed of a single material (hole transporting material or electron transporting material), or may be formed by including both the hole transporting material and the electron transporting material. good. When composed of a single material, a bipolar material may be used. The bipolar material referred to here refers to a material having an electron-hole mobility ratio of 100 or less. Further, as the material used for the third layer, the same material as the material contained in the first light emitting layer or the second light emitting layer can be used. With such a configuration, the light emitting element can be easily manufactured, and the drive voltage can be reduced.

As described above, the light emitting element shown in the present embodiment preferably has a microcavity structure. As a result, light having a different wavelength (monochromatic light) can be extracted even if the EL layer is the same. It is advantageous in realizing full color because it is easy to realize high definition as compared with different painting (for example, RGB). It can also be combined with a colored layer (color filter). Further, by applying the microcavity structure, it is possible to enhance the emission intensity in the front direction of a specific wavelength, so that it is possible to reduce the power consumption. This configuration is particularly useful when applied to a color display (image display device) using pixels of three or more colors, but it can also be used for applications such as lighting devices in addition to these backlights and front lights. good.

Further, as a configuration of a light emitting device provided with the above light emitting element, a passive matrix type light emitting device, an active matrix type light emitting device, and the like can be manufactured, and these are all included in one aspect of the present invention. And.

In the case of the active matrix type light emitting device, the structure of the transistor (FET) is not particularly limited. For example, a staggered or inverted staggered FET can be appropriately used. Further, the drive circuit formed on the FET substrate may also be composed of N-type and P-type FETs, or may be composed of only one of N-type FETs and P-type FETs. .. Further, the crystallinity of the semiconductor film used for the FET is not particularly limited. For example, an amorphous semiconductor film or a crystalline semiconductor film can be used. Further, as the semiconductor material, a group 13 (gallium or the like) semiconductor, a group 14 (silicon or the like) semiconductor, a compound semiconductor (including an oxide semiconductor), an organic semiconductor or the like can be used.

Further, the light emitting element shown in the present embodiment can be formed on various substrates. The type of substrate is not limited to a specific one. Examples of the substrate include a semiconductor substrate (for example, a single crystal substrate or a silicon substrate), an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, a stainless steel substrate, a substrate having a stainless still foil, and the like.
There are tungsten substrates, substrates with tungsten foil, flexible substrates, laminated films, paper containing fibrous materials, base films, and the like. As an example of a glass substrate,
There are barium borosilicate glass, aluminoborosilicate glass, soda lime glass and the like. Examples of the flexible substrate, the laminated film, the base film and the like are as follows. For example, there are plastics typified by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyether sulfone (PES).
Alternatively, as an example, there is a synthetic resin such as acrylic. Alternatively, examples include polypropylene, polyester, polyvinyl fluoride, polyvinyl chloride, and the like. Alternatively, examples include polyamides, polyimides, aramids, epoxies, inorganic vapor-deposited films, and papers.

When a transistor is formed on these substrates together with a light emitting element, the characteristics, size, shape, and the like are less likely to vary by using a semiconductor substrate, a single crystal substrate, an SOI substrate, or the like, and a current is generated. It is possible to manufacture transistors with high capacity and small size. Further, when the circuit is configured by such a transistor, the power consumption of the circuit can be reduced or the circuit can be highly integrated.

When the above-mentioned flexible substrate is used as the substrate on which the light emitting element or transistor is formed, the light emitting element or transistor may be directly formed on the flexible substrate, or the release layer may be formed on the base substrate. After forming a part or all of the light emitting element or the transistor through the substrate, the light emitting element or the transistor may be separated from the base substrate and reprinted on another substrate. When such a release layer is used and reprinted on another substrate, the light emitting element or transistor can be formed on a substrate having poor heat resistance or a flexible substrate which is difficult to form directly. For the above-mentioned release layer, for example, a structure in which an inorganic film of a tungsten film and a silicon oxide film is laminated, a structure in which an organic resin film such as polyimide is formed on a substrate, or the like can be used. Further, as the substrate to be reprinted, in addition to the substrate capable of forming the above-mentioned transistor, a paper substrate, a cellophane substrate, an aramid film substrate, a polyimide film substrate, a stone substrate, a wood substrate, and a cloth substrate (natural fiber (silk, silk)). There are cotton, linen), synthetic fibers (including nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester), leather substrates, rubber substrates, and the like. By using these substrates, it is possible to achieve excellent durability and heat resistance, and to reduce the weight and thickness.

The configuration shown in this embodiment can be used in combination with the configuration shown in other embodiments as appropriate.

(Embodiment 2)
In this embodiment, the organic compound represented by the following general formula (G1) will be described in detail.

In the general formula (G1), Ar ¹ and Ar ² each independently represent an aryl group having 6 to 13 carbon atoms forming a substituted or unsubstituted ring, and R ^{1 to} R ⁸ and R ^{10 to} R ^{18 respectively.} And R ^{20 to} R ²⁸ are independently hydrogen, substituted or unsubstituted alkyl groups having 1 to 6 carbon atoms, substituted or unsubstituted alkoxy groups having 1 to 6 carbon atoms, cyano groups, halogens, substituted or absent. It represents a substituted haloalkyl group having 1 to 6 carbon atoms or a substituted or unsubstituted aryl group having 6 to 10 carbon atoms. In the general formula (G1), ^{a substance in which R 18} and R ²⁸ are substituted or unsubstituted phenyl groups is preferable because the emission wavelength is a short wavelength substance. Further, ^{a light emitting element using a substance in which R 18} and R ²⁸ are substituted or unsubstituted phenyl groups is preferable because the half width of the emission spectrum is short, the emission efficiency is good, and the reliability is good. In order to avoid three-dimensional structural distortion, it is more preferable that R ¹⁸ and R ²⁸ are unsubstituted phenyl groups, but when R ¹⁸ and R ²⁸ are phenyl groups having a substituent, as the substituent. Has 1 to 1 carbon atoms
The alkyl group or phenyl group of 6 is preferable.

Further, among the organic compounds represented by the general formula (G1), it is preferable to use the organic compound represented by the following general formula (G2) because the emission wavelength is further shortened.

In the general formula (G2), R ^{1 to} R ⁸ and R ^{29 to} R ³⁸ are independently hydrogen, respectively.
Substituent or unsubstituted alkyl group having 1 to 6 carbon atoms, substituted or unsubstituted alkoxy group having 1 to 6 carbon atoms, cyano group, halogen, substituted or unsubstituted haloalkyl group having 1 to 6 carbon atoms, or substituted or unsubstituted. Represents an unsubstituted aryl group having 6 to 10 carbon atoms.

In addition, a specific example of an aryl group having 6 to 13 carbon atoms forming a substituted or unsubstituted ring in the general formula (G1), and 6 to 10 substituted or unsubstituted carbon atoms in the general formula (G2).
Specific examples of the aryl group of the above are phenyl group, 1-naphthyl group, 2-naphthyl group, ortho-tolyl group, meta-tolyl group, para-tolyl group, ortho-biphenyl group, meta-biphenyl group and para-biphenyl. Group, 9,9-dimethyl-9H-fluoren-2-yl group, 9,9
−Diphenyl-9H-fluorene-2-yl group, 9H-fluorene-2-yl group, para-
Examples thereof include a tert-butylphenyl group and a mesitylene group.

Further, in the general formula (G1) and the general formula (G2), the number of carbon atoms is 1 to 6 which are substituted or unsubstituted.
Specific examples of the alkyl group of are methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, isobutyl group, tert-butyl group, n-pentyl group, isopentyl group, sec. -Pentyl group, tert-pentyl group, neopentyl group, n
-Hexyl group, isohexyl group, sec-hexyl group, tert-hexyl group, neohexyl group, cyclohexyl group, 3-methylpentyl group, 2-methylpentyl group, 2-ethylbutyl group, 1,2-dimethylbutyl group, 2, Examples thereof include a 3-dimethylbutyl group.

Further, in the general formula (G1) and the general formula (G2), the number of carbon atoms is 1 to 6 which are substituted or unsubstituted.
Specific examples of the alkoxy group, cyano group, halogen, substituted or unsubstituted haloalkyl group having 1 to 6 carbon atoms include a methoxy group, an ethoxy group, an n-propoxy group, and an isopropoxy group.
n-butoxy group, sec-butoxy group, isobutoxy group, tert-butoxy group, n-pentyroxy group, isopentyroxy group, sec-pentyroxy group, tert-pentyroxy group, neopentyroxy group, n-hexyloxy group, isohexyloxy group , Sec-hexyloxy group, tert-hexyloxy group, neohexyloxy group, cyclohexyloxy group, 3-
Methylpentyroxy group, 2-methylpentyroxy group, 2-ethylbutoxy group, 1,2-dimethylbutoxy group, 2,3-dimethylbutoxy group, cyano group, fluorine, chlorine, bromine, iodine, trifluoromethyl group, etc. Can be mentioned.

In the above-mentioned organic compound, benzonaphthofuranylamine is bonded to the 1-position and the 6-position of the pyrene skeleton, respectively, and the nitrogen atom in the benzonaphthofuranylamine is independently benzo [b] naphtho [1,2-d]. ] It has a structure bonded to the 6- or 8-position of the furanyl group. In this way, by forming the structure in which benzonaphthofuranylamine is bonded to the 1-position and the 6-position of the pyrene skeleton, respectively, the effective conjugation length can be extended from the pyrene skeleton to the benzonaphthofuranylamine. In comparison, the emission peak wavelength can be shifted to a longer wavelength. Further, when having this structure, the molecular structure is stabilized by the benzonaphthofuranyl group, so that the reliability is expected to be improved. Furthermore, since the 6- or 8-position of the benzo [b] naphtho [1,2-d] furanyl group has a structure bonded to the amine skeleton, the color purity of blue can be further enhanced.

When the case where the 6-position of the benzo [b] naphtho [1,2-d] furanyl group has a structure bonded to the amine skeleton and the case where the 8-position has a structure bonded to the amine skeleton are compared, ,
Short-wavelength emission can be obtained when the 8-position has a structure bonded to the amine skeleton. This is because the effective conjugation length is narrower when the 8-position has a structure bonded to the amine skeleton. Further, when the 8-position has a structure bonded to the amine skeleton, the structure having an aryl group at the 6-position of the benzo [b] naphtho [1,2-d] furanyl group has an effect of steric hindrance of the aryl group. Therefore, a blue color having a higher color purity can be obtained. Further, in the case of this structure, since the intramolecular interaction can be reduced, high color purity can be maintained even when the concentration of the organic compound is high.

Therefore, by using the above-mentioned organic compound as a light emitting substance in the light emitting device according to one aspect of the present invention, it is possible not only to reduce the driving voltage for obtaining the desired brightness but also to obtain a highly reliable light emitting device. Obtainable.

Next, specific examples of the organic compounds (general formulas (G1) and (G2)) that can be used in the light emitting device according to the above-described aspect of the present invention will be shown. (The following structural formulas (100) to (133).
However, the present invention is not limited thereto.

The above-mentioned organic compound exhibits blue light emission with good color purity, and NTSC (Nationa)
It is possible to obtain deep blue light emission near or deeper than the blue chromaticity (that is, (x, y) = (0.14,0.08)) defined by the Television Standards Committee. Therefore, by using these organic compounds in the light emitting element, it is possible to realize a highly reliable light emitting element having a low drive voltage. Further, by using such a light emitting element, it is possible to realize low power consumption and long life of the light emitting device, the electronic device, and the lighting device, which is one aspect of the present invention.

The configuration shown in this embodiment can be used in combination with the configurations shown in other embodiments as appropriate.

(Embodiment 3)
In the present embodiment, one aspect of the light emitting device in the case of combining the light emitting element described in the first embodiment with a colored layer (color filter or the like) will be described. In this embodiment, the configuration of the pixel portion of the light emitting device will be described with reference to FIG.

In FIG. 5, a plurality of FETs 502 are formed on the substrate 501, and each FET 502 is electrically connected to each light emitting element (507R, 507G, 507B, 507W). Specifically, each FET 502 is electrically connected to a first electrode 503, which is a pixel electrode of a light emitting element. Further, a partition wall 504 is provided to fill the end portions of the adjacent first electrodes 503.

The first electrode 503 in the present embodiment has a function as a reflective electrode. Further, an EL layer 505 is formed on the first electrode 503, and a second electrode 510 is formed on the EL layer 505. Further, the EL layer 505 has a configuration having a plurality of light emitting layers exhibiting a plurality of monochromatic lights, and the second electrode 510 is an electrode that functions as a semi-transmissive / semi-reflective electrode.

Different light emission can be obtained from each light emitting element (507R, 507G, 507B, 507W). Specifically, the light emitting element 507R is optically adjusted so as to obtain red light emission, and red light is emitted in the direction of the arrow through the colored layer 508R in the region indicated by 506R. Further, the light emitting element 507G is optically adjusted so as to obtain green light emission, and green light is emitted in the direction of the arrow through the colored layer 508G in the region indicated by 506G. Further, the light emitting element 507B is optically adjusted so as to obtain blue light emission, and 5
In the region indicated by 06B, blue light is emitted in the direction of the arrow through the colored layer 508B. Further, the light emitting element 507W is optically adjusted so as to obtain white light emission, and is 506.
In the region indicated by W, white light is emitted in the direction of the arrow without passing through the colored layer.

In addition, each colored layer (508R, 508G, 508B) is each light emitting element (5) as shown in FIG.
07R, 507G, 507B, 507W) is provided on the transparent sealing substrate 511 arranged above the substrate 501. Each colored layer (508R, 508G, 508B)
) Are provided at positions overlapping with each light emitting element (507R, 507G, 507B) exhibiting each light emitting color.

In addition, a black layer (508R, 508G, 508B) is used to fill the edges of the adjacent colored layers (508R, 508G, 508B).
Black matrix) 509 is provided. Each colored layer (508R, 508G)
, 508B) and the black layer 509 may be covered with an overcoat layer made of a transparent material.

In the configuration described above, the light emitting device has a structure that extracts light from the sealing substrate 511 side (top emission type), but emits light having a structure that extracts light to the substrate 501 side on which the FET is formed (bottom emission type). It may be used as a device. In the case of the top emission type light emitting device shown in the present embodiment, a light-shielding substrate and a translucent substrate can be used as the substrate 501, but in the case of the bottom emission type light emitting device, the substrate 501 can be used. , It is necessary to use a translucent substrate as the substrate 501.

In addition to the above configuration, the configuration as shown in FIG. 10 may be used. In the case of FIG. 10, light emitting elements (507R, 507G, 507B, 507) electrically connected to the FET 502 on the substrate 501
The configuration of Y) is partially different from that of FIG. Further, among the configurations of the light emitting layer contained in the EL layer shown in the first embodiment, the light emitting layer 106a emits blue light by using the fluorescent light emitting substance described in the first embodiment, and the light emitting layer 106b emits yellow light. It may be configured to obtain.

In this case, different light emission can be obtained from each light emitting element (507R, 507G, 507B, 507Y). Specifically, the light emitting element 507R is optically adjusted so as to obtain red light emission, and red light is emitted in the direction of the arrow through the colored layer 508R in the region indicated by 506R. Further, the light emitting element 507G is optically adjusted so as to obtain green light emission, and green light is emitted in the direction of the arrow through the colored layer 508G in the region indicated by 506G. Further, the light emitting element 507B is optically adjusted so as to obtain blue light emission, and blue light is emitted in the direction of the arrow through the colored layer 508B in the region indicated by 506B. Further, the light emitting element 507Y is optically adjusted so as to obtain yellow light emission, and yellow light is emitted in the direction of the arrow through the colored layer 508Y in the region indicated by 506Y.

Each colored layer (508R, 508G, 508B, 508Y) is a transparent seal arranged above the substrate 501 provided with each light emitting element (507R, 507G, 507B, 507Y) as shown in FIG. It is provided on the substrate 511. Each colored layer (508R, 508)
G, 508B, 508Y) are light emitting elements (507R, 507) exhibiting their respective emission colors.
G, 507B, 507Y) are provided at overlapping positions, respectively.

In the light emitting device of one aspect of the present invention, the blue light emitted from the light emitting element 507B and emitted to the outside of the light emitting device via the colored layer 508B has a chromaticity of x = 0.13 or more in xy chromaticity coordinates. Deep blue light emission of .17 or less and y = 0.03 or more and 0.08 or less is preferable. More preferably, the y-coordinate of blue light emitted from the light emitting element 507B and emitted to the outside of the light emitting device via the colored layer 508B is 0.03 or more and 0.07 or less.

By using blue light emission having such a chromaticity, it is possible to reduce the brightness of blue light emission required to obtain white light emission. Since the amount of current consumed by the blue light emitting element for obtaining the specified white light emission is significantly larger than the amount of current consumed by the light emitting elements of other colors, the brightness of the blue light emission required for obtaining white light emission is reduced. As a result, the effect of reducing the amount of current is very large.

The current efficiency of the blue light emitting element generally decreases as the chromaticity of blue improves, but the effect of reducing the brightness of blue light required to obtain white light emission due to the improvement of blue chromaticity is more effective. big. That is, the amount of current of the blue light emitting element required to obtain the specified white light emission is greatly reduced, and the power consumption of the entire light emitting device is reduced accordingly.

Further, since the chromaticity of the blue emission becomes deep blue as described above, the tint of the emission obtained by combining the blue emission and the yellow emission changes, and it is necessary to obtain the specified white emission. Third
The emission color of the may change. For example, the chromaticity of blue is the emission color near NTSC ((x, y).
) = (Around 0.14, 0.08)), and the chromaticity of yellow is (x, y) = (0.45, 0.
In the case of the vicinity of 54), in order to obtain the white emission near D65, a red emission component is further required for the emission obtained by combining the blue emission and the yellow emission. On the other hand, even if the chromaticity of blue is near NTSC, the chromaticity of yellow is (x, y) = (0.46, 0.53) or more reddish (that is, x is more). If it is large and y is a smaller chromaticity), a white emission near D65 can be obtained by adding a green emission component to the emission obtained by combining blue emission and yellow emission. However, if the chromaticity of yellow is brought closer to red than this chromaticity, the current efficiency of the yellow pixel is lowered due to the deterioration of the luminosity factor. That is, the effect of reducing power consumption is impaired accordingly.

As described above, the color of the third emission required to obtain the white emission near D65 differs depending on the tint of the blue emission and the yellow emission. In general, green emission is more advantageous than red emission because it has better current efficiency. However, if the chromaticity of yellow is shifted to red as described above, the current efficiency of the yellow pixel is lowered due to the decrease in the luminosity factor of the yellow emission. It is not preferable to bring the chromaticity of yellow light emission closer to red because the effect of the decrease in current efficiency of yellow light emission with high visual sensitivity is large.

Here, on the other hand, when deep blue light emission of x = 0.13 or more and 0.17 or less and y = 0.03 or more and 0.08 or less is used, yellow is the chromaticity with high visual sensitivity (that is, the chromaticity of red). It is possible to obtain white light emission near D65 by using blue light emission and yellow light emission and using green light emission as the third light emission color while maintaining the chromaticity not too close to the side). With this configuration, the current efficiency remains high because the yellow emission can use the emission of a tint having high luminosity factor. Further, the required brightness of green light emission in this configuration is smaller than the required brightness when red light emission is used as the third light emission color. Moreover, green light emission may have better visual sensitivity than red light emission.
Usually, the current efficiency of the green light emitting element is also better than the current efficiency of the red light emitting element, so that the amount of current for obtaining the third light emitting color is greatly reduced. As a result, the drive voltage is lowered, which leads to a reduction in power consumption. The chromaticity of yellow emission at this time is x = 0.44 or more and 0.
It is preferably 46 or less and y = 0.53 or more and 0.55 or less.

The decrease in the brightness component of the blue light emitting element and the light emitting element of the third light emitting color for obtaining the specified white light emission can be compensated for by increasing the brightness carried by the yellow light emitting element. Since yellow light emission has very high luminosity factor, the current efficiency of the yellow light emitting element is very high, and the increased power consumption due to the increase in the required brightness of yellow is the blue light emitting element and the light emitting element of the third light emitting color. It is possible to reduce the power consumption by offsetting the reduced power consumption due to the reduction in the required brightness.

In xy chromaticity coordinates, x = 0.13 or more and 0.17 or less and y = 0.03 or more and 0.08 or less, preferably x = 0.13 or more and 0.17 or less and y = 0.03 or more and 0.07 or less. In order to obtain deep blue light emission, the peak wavelength of the light emission spectrum of the fluorescent light emitting material contained in the first light emitting element in a toluene solution is 440 nm to 460 nm, preferably 440 nm to 4.
It is preferably 55 nm. The chromaticity of the blue light emitting element can be adjusted with a color filter or the like,
This is because light having such a wavelength is less likely to be cut even through a color filter, and light emitted from a fluorescent light emitting material can be efficiently used. For the same reason, the half width of the emission spectrum of the fluorescent light emitting material in the toluene solution is preferably 20 nm or more and 50 nm or less.

By using blue light emission having such chromaticity, x is white light emission near D65.
It is possible to reduce the power consumption for obtaining light having a chromaticity of (0.313, 0.329) in the y chromaticity coordinates. Specifically, the chromaticity in the xy chromaticity coordinates is (0.313, 0.32).
When the white light emission of 9) ^{is obtained at a brightness of 300 cd / m 2} , the power consumption of the light emitting device excluding the drive FET is 1 mW / cm ² or more and 7 mW / cm ² or less, and the power consumption including the drive FET (anode and cathode). Power consumption calculated from the product of the voltage between and the current consumption) is ² mW / cm 2 or more 1
It can be 5 mW / cm ^{2 or less.}

With the above configuration, it is possible to obtain a light emitting element exhibiting a plurality of light emitting colors (red, blue, green, yellow) and to provide white light emission having high luminous efficiency by combining these light emissiones. Light emitting device can be obtained.

The light emitting device of one aspect of the present invention can be manufactured using various substrates. The type of substrate is not limited to a specific one. Examples of substrates include semiconductor substrates (eg single crystal substrates or silicon substrates), SOI substrates, glass substrates, quartz substrates, plastic substrates, metal substrates, stainless steel substrates, substrates with stainless still foils, tungsten substrates, etc. There are substrates with tungsten foil, flexible substrates, bonded films, papers containing fibrous materials, or substrate films. Examples of glass substrates include barium borosilicate glass, aluminoborosilicate glass, and soda lime glass. Examples of flexible substrates, laminated films, base films, etc. include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyether sulfone (P).
ES), plastics typified by polytetrafluoroethylene (PTFE) can be mentioned. Further, acrylic, polypropylene, polyester, polyvinyl fluoride, polyvinyl chloride, polyamide, polyimide, aramid, epoxy, inorganic vapor-deposited film, papers and the like may be used.

By manufacturing a transistor using a semiconductor substrate, a single crystal substrate, an SOI substrate, or the like, it is possible to manufacture a transistor having a high current capacity and a small size with little variation in characteristics, size, shape, and the like. When the circuit is composed of such transistors, the power consumption of the circuit can be reduced or the circuit can be highly integrated.

A semiconductor device such as a transistor may be formed after providing a release layer on the substrate. The peeling layer is
After the semiconductor device is partially or completely completed on it, it can be separated from the substrate and used for reprinting on another substrate. At that time, the transistor can be reprinted on a substrate having poor heat resistance or a flexible substrate. For the above-mentioned release layer, for example, a structure in which an inorganic film of a tungsten film and a silicon oxide film is laminated, a structure in which an organic resin film such as polyimide is formed on a substrate, or the like can be used.

That is, a transistor or a light emitting element may be formed using a certain substrate, then the transistor or the light emitting element may be transposed on another substrate, and the transistor or the light emitting element may be arranged on another substrate. As an example of a substrate on which a transistor or a light emitting element is transferred, in addition to the above-mentioned substrate on which a transistor can be formed, a paper substrate, a cellophane substrate, an aramid film substrate, a polyimide film substrate, a stone substrate, a wood substrate, or a cloth substrate. (Including natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester) or recycled fibers (acetate, cupra, rayon, recycled polyester), etc.), leather substrates, rubber substrates, etc. By using these substrates, it is possible to form a transistor having good characteristics, to form a transistor having low power consumption, to manufacture a device that is hard to break, to impart heat resistance, to reduce the weight, or to reduce the thickness. In order to manufacture a flexible light emitting device, a flexible substrate may be used, and a transistor or a light emitting element may be formed directly on the flexible substrate.

The configuration shown in this embodiment can be used in combination with the configurations shown in other embodiments as appropriate.

(Embodiment 4)
In the present embodiment, a light emitting device having a light emitting element, which is one aspect of the present invention, will be described.

Further, the light emitting device may be a passive matrix type light emitting device or an active matrix type light emitting device. The light emitting element described in other embodiments can be applied to the light emitting device shown in this embodiment.

In the present embodiment, the active matrix type light emitting device will be described with reference to FIG.

6 (A) is a top view showing a light emitting device, and FIG. 6 (B) is a chain line AA of FIG. 6 (A).
It is a cross-sectional view cut by'. The active matrix type light emitting device according to the present embodiment is
Pixel unit 602 provided on the element substrate 601 and drive circuit unit (source line drive circuit) 603
And a drive circuit unit (gate line drive circuit) 604a and 604b. Pixel part 602
, The drive circuit unit 603, and the drive circuit units 604a and 604b are sealed between the element substrate 601 and the sealing substrate 606 by the sealing material 605.

Further, on the element substrate 601 the drive circuit unit 603 and the drive circuit units 604a and 604b
Is provided with a routing wiring 607 for connecting an external input terminal for transmitting an external signal (for example, a video signal, a clock signal, a start signal, a reset signal, etc.) or an electric potential. Here, an example in which an FPC (flexible printed circuit) 608 is provided as an external input terminal is shown. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC. The light emitting device in the present specification includes not only the light emitting device main body but also a state in which an FPC or PWB is attached to the light emitting device main body.

Next, the cross-sectional structure will be described with reference to FIG. 6 (B). A drive circuit unit and a pixel unit are formed on the element substrate 601. Here, a drive circuit unit 603, which is a source line drive circuit, and a pixel unit 602 are shown.

The drive circuit unit 603 illustrates a configuration in which the FET 609 and the FET 610 are combined. The drive circuit unit 603 may be formed of a circuit including a unipolar (only one of N-type or P-type) transistors, or may be formed of a CMOS circuit including an N-type transistor and a P-type transistor. May be done. Further, in the present embodiment, the driver integrated type in which the drive circuit is formed on the substrate is shown, but the drive circuit can also be formed outside.

Further, the pixel unit 602 has a plurality of pixels including a switching FET 611 and a first electrode (anode) 613 electrically connected to the wiring (source electrode or drain electrode) of the current control FET 612 and the current control FET 612. Is formed by. Further, in the present embodiment, an example in which the pixel unit 602 is composed of two FETs, a switching FET 611 and a current control FET 612, has been shown, but the present invention is not limited to this. For example, 3 or more FEs
The pixel unit 602 may be a combination of T and a capacitive element.

As the FETs 609, 610, 611, and 612, for example, stagger type or reverse stagger type transistors can be applied. As the semiconductor material that can be used for FETs 609, 610, 611, and 612, for example, a group 13 (gallium or the like) semiconductor, a group 14 (silicon or the like) semiconductor, a compound semiconductor, an oxide semiconductor, or an organic semiconductor can be used. The crystallinity of the semiconductor material is not particularly limited, and for example, an amorphous semiconductor film or a crystalline semiconductor film can be used. In particular, it is preferable to use oxide semiconductors as FETs 609, 610, 611, and 612. Examples of the oxide semiconductor include In-Ga oxide and In-M-Zn oxide (M is Al, Ga, Y, Zr, La, Ce, or Nd).
And so on. As the FETs 609, 610, 611, and 612, for example, an oxide semiconductor material having an energy gap of 2 eV or more, preferably 2.5 eV or more, and more preferably 3 eV or more can be used to reduce the off-current of the transistor.

Further, an insulating material 614 is formed so as to cover the end portion of the first electrode 613. Here, it is formed by using a positive photosensitive acrylic resin as the insulating material 614. Further, in the present embodiment, the first electrode 613 is used as an anode.

Further, it is preferable that a curved surface having a curvature is formed at the upper end portion or the lower end portion of the insulator 614. By forming the shape of the insulating material 614 as described above, the covering property of the film formed on the upper layer of the insulating material 614 can be improved. For example, as the material of the insulator 614, either a negative type photosensitive resin or a positive type photosensitive resin can be used, and not only organic compounds but also inorganic compounds such as silicon oxide and silicon oxide nitride can be used. Silicon nitride or the like can be used.

An EL layer 615 and a second electrode (cathode) 616 are laminated on the first electrode (anode) 613. The EL layer 615 is provided with at least a light emitting layer. Also, the EL layer 61
In addition to the light emitting layer, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer and the like can be appropriately provided in 5.

The light emitting element 617 is formed by a laminated structure of the first electrode (anode) 613, the EL layer 615, and the second electrode (cathode) 616. As the material used for the first electrode (anode) 613, the EL layer 615 and the second electrode (cathode) 616, the material shown in the first embodiment can be used. Further, although not shown here, the second electrode (cathode) 616 is electrically connected to the FPC608 which is an external input terminal.

Further, in the cross-sectional view shown in FIG. 6B, only one light emitting element 617 is shown, but the pixel portion 6
In 02, it is assumed that a plurality of light emitting elements are arranged in a matrix. Pixel unit 60
In No. 2, light emitting elements capable of obtaining three types of light emission (R, G, B) can be selectively formed to form a light emitting device capable of full-color display. In addition to the light emitting elements that can obtain three types of light emission (R, G, B), for example, white (W), yellow (Y), and magenta (M).
), Cyan (C) and the like may be formed. For example, 3 types (R,
By adding a light emitting element capable of obtaining the above-mentioned several types of light emission to the light emitting element capable of obtaining the light emission of G and B), effects such as improvement of color purity and reduction of power consumption can be obtained. Further, it may be a light emitting device capable of full-color display by combining with a color filter. Further, it may be a light emitting device in which the light emitting efficiency is improved and the power consumption is reduced by combining with the quantum dots.

Further, by bonding the sealing substrate 606 with the element substrate 601 with the sealing material 605,
The structure is such that the light emitting element 617 is provided in the space 618 surrounded by the element substrate 601, the sealing substrate 606, and the sealing material 605. In addition to the case where the space 618 is filled with an inert gas (nitrogen, argon, etc.), it is assumed that the space 618 is filled with the sealing material 605.

It is preferable to use an epoxy resin or glass frit for the sealing material 605. Further, it is desirable that these materials are materials that do not allow moisture or oxygen to permeate as much as possible. again,
Materials used for the sealing substrate 606 include glass substrates and quartz substrates, as well as FRP (Fiber-R).
A substrate made of a material such as that mentioned as the material of the substrate in the third embodiment can be used, such as a plastic substrate made of einfused Plastics), PVF (polyvinyl fluoride), polyester, acrylic or the like. When a glass frit is used as the sealing material, the element substrate 601 and the sealing substrate 606 are preferably glass substrates from the viewpoint of adhesiveness.

As described above, an active matrix type light emitting device can be obtained.

In addition, the configuration shown in this embodiment can be used in combination with the configurations shown in other embodiments as appropriate.

(Embodiment 5)
In the present embodiment, an example of various electronic devices completed by applying the light emitting device according to one aspect of the present invention will be described with reference to FIG. 7.

Electronic devices to which the light emitting device is applied include, for example, television devices (also referred to as televisions or television receivers), monitors for computers, digital cameras, digital video cameras, digital photo frames, mobile phones (mobile phones, mobile phones). (Also called a telephone device), a portable game machine, a mobile information terminal, a sound reproduction device, a large game machine such as a pachinko machine, and the like. Specific examples of these electronic devices are shown in FIG.

FIG. 7A shows an example of a television device. In the television device 7100, the display unit 7103 is incorporated in the housing 7101. An image can be displayed by the display unit 7103, and a touch panel (input / output device) equipped with a touch sensor (input device).
It may be. The light emitting device according to one aspect of the present invention can be used for the display unit 7103. Further, here, a configuration in which the housing 7101 is supported by the stand 7105 is shown.

The operation of the television device 7100 can be performed by an operation switch provided in the housing 7101 or a separate remote controller operating device 7110. The operation keys 7109 included in the remote controller 7110 can be used to control the channel and volume, and the image displayed on the display unit 7103 can be operated. Further, the remote controller 7110 may be provided with a display unit 7107 for displaying information output from the remote controller 7110.

The television device 7100 is configured to include a receiver, a modem, and the like. The receiver can receive general television broadcasts, and by connecting to a wired or wireless communication network via a modem, it can be unidirectional (sender to receiver) or bidirectional (sender and receiver). It is also possible to perform information communication between (or between recipients, etc.).

FIG. 7B is a computer, which includes a main body 7201, a housing 7202, a display unit 7203, a keyboard 7204, an external connection port 7205, a pointing device 7206, and the like.
A computer can be manufactured by using the light emitting device according to one aspect of the present invention for the display unit 7203. Further, the display unit 7203 may be a touch panel (input / output device) equipped with a touch sensor (input device).

FIG. 7C is a smart watch, which includes a housing 7302, a display panel 7304, operation buttons 7311 and 7312, a connection terminal 7313, a band 7321, a clasp 7322, and the like.

The display panel 7304 mounted on the housing 7302 that also serves as the bezel portion has a non-rectangular display area. The display panel 7304 can display the time icon 7305, other icons 7306, and the like. Further, the display unit 7304 may be a touch panel (input / output device) equipped with a touch sensor (input device).

The smart watch shown in FIG. 7C can have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, etc., a function to control processing by various software (programs), Wireless communication function, function to connect to various computer networks using wireless communication function, function to transmit or receive various data using wireless communication function, read and display program or data recorded on recording medium It can have a function of displaying on a unit, and the like.

In addition, a speaker, a sensor (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, voice, time, hardness, electric field, current) are inside the housing 7302. , Includes the ability to measure voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), microphones and the like. The smart watch can be manufactured by using a light emitting device for the display panel 7304.

FIG. 7D shows an example of a mobile phone (including a smartphone). Mobile phone 7
The 400 includes a display unit 7402, a microphone 7406, a speaker 7405, a camera 7407, an external connection unit 7404, an operation button 7403, and the like in the housing 7401. Further, when the light emitting element according to one aspect of the present invention is formed on a flexible substrate to produce a light emitting device,
It can be applied to the display unit 7402 having a curved surface as shown in FIG. 7 (D).

In the mobile phone 7400 shown in FIG. 7D, information can be input by touching the display unit 7402 with a finger or the like. Also, operations such as making a phone call or composing an email can be performed.
This can be done by touching the display unit 7402 with a finger or the like.

The screen of the display unit 7402 mainly has three modes. The first is a display mode mainly for displaying an image, and the second is an input mode mainly for inputting information such as characters. The third is a display + input mode in which two modes, a display mode and an input mode, are mixed.

For example, when making a phone call or composing an e-mail, the display unit 7402 may be set to a character input mode mainly for inputting characters, and the characters displayed on the screen may be input. In this case, it is preferable to display the keyboard or the number button on most of the screen of the display unit 7402.

Further, by providing a detection device such as a gyro sensor or an acceleration sensor inside the mobile phone 7400, the orientation (vertical or horizontal) of the mobile phone 7400 is determined, and the screen display of the display unit 7402 is automatically switched. Can be.

The screen mode can be switched by touching the display unit 7402 or by operating the button 7403 of the housing 7401. It is also possible to switch depending on the type of image displayed on the display unit 7402. For example, if the image signal displayed on the display unit is moving image data, the display mode is switched, and if the image signal is text data, the input mode is switched.

Further, in the input mode, the signal detected by the optical sensor of the display unit 7402 is detected, and when there is no input by the touch operation of the display unit 7402 for a certain period of time, the screen mode is switched from the input mode to the display mode. You may control it.

The display unit 7402 can also function as an image sensor. For example, display unit 74
The person can be authenticated by touching 02 with a palm or a finger and taking an image of a palm print, a fingerprint, or the like. Further, if a backlight that emits near-infrared light or a sensing light source that emits near-infrared light is used for the display unit, finger veins, palmar veins, and the like can be imaged.

Further, as another configuration of the mobile phone (including a smartphone), it can be applied to a mobile phone having a structure as shown in FIG. 7 (D'-1) and FIG. 7 (D'-2).

When the structure is as shown in FIG. 7 (D'-1) and FIG. 7 (D'-2), the character information, the image information, and the like are stored in the first of the housings 7500 (1) and 7500 (2). Surfaces 7501 (1), 7501
It can be displayed not only on (2) but also on the second surface 7502 (1) and 7502 (2).
By having such a structure, the mobile phone can be kept in the chest pocket.
The user can easily check the character information, the image information, and the like displayed on the second surface 7502 (1), 7502 (2), and the like.

Further, FIGS. 8A to 8C show a foldable portable information terminal 9310. FIG. 8 (A
) Indicates the mobile information terminal 9310 in the expanded state. FIG. 8B shows a mobile information terminal 9310 in a state in which it is in the process of changing from one of the expanded state or the folded state to the other. FIG. 8 (
The mobile information terminal 9310 in a folded state is shown in C). The mobile information terminal 9310 is excellent in portability in the folded state, and is excellent in display listability due to a wide seamless display area in the unfolded state.

The display panel 9311 is supported by three housings 9315 connected by hinges 9313. The display panel 9311 may be a touch panel (input / output device) equipped with a touch sensor (input device). Further, the display panel 9311 can be reversibly deformed from the unfolded state to the folded state of the portable information terminal 9310 by bending between the two housings 9315 via the hinge 9313. The light emitting device of one aspect of the present invention can be used for the display panel 9311. Display area 931 on display panel 9311
Reference numeral 2 denotes a display area located on the side surface of the folded mobile information terminal 9310. Information icons and shortcuts of frequently used applications and programs can be displayed in the display area 9312, so that information can be confirmed and applications can be started smoothly.

As described above, an electronic device can be obtained by applying the light emitting device according to one aspect of the present invention. The applicable electronic devices are not limited to those shown in the present embodiment, and can be applied to electronic devices in all fields.

(Embodiment 6)
In the present embodiment, an example of a lighting device to which a light emitting device according to an aspect of the present invention is applied.
This will be described with reference to FIG.

FIG. 9 shows an example in which the light emitting device is used as the indoor lighting device 8001. Since the light emitting device can have a large area, it is possible to form a large area lighting device. In addition, by using a housing having a curved surface, it is possible to form a lighting device 8002 having a housing, a cover, or a support base and having a curved light emitting region. The light emitting element included in the light emitting device shown in the present embodiment has a thin film shape, and has a high degree of freedom in the design of the housing. Therefore, it is possible to form a lighting device with various elaborate designs. Further, a large lighting device 8003 may be provided on the wall surface of the room.

Further, by using the light emitting device on the surface of the table, the lighting device 8004 having a function as a table can be obtained. By using a light emitting device for a part of other furniture, it is possible to obtain a lighting device having a function as furniture.

As described above, various lighting devices to which the light emitting device is applied can be obtained. It should be noted that these lighting devices are included in one aspect of the present invention.

Moreover, the configuration shown in this embodiment can be used in combination with the configuration shown in other embodiments as appropriate.

(Embodiment 7)
In the present embodiment, a touch panel having the light emitting element of one aspect of the present invention or the light emitting device of one aspect of the present invention will be described with reference to FIGS. 11 to 15.

11 (A) and 11 (B) are perspective views of the touch panel 2000. It should be noted that FIGS. 11 (A) and 11 (B)
) Shows typical components of the touch panel 2000 for clarification.

The touch panel 2000 has a display unit 2501 and a touch sensor 2595 (FIG. 11 (FIG. 11).
B) See). Further, the touch panel 2000 includes a substrate 2510, a substrate 2570, and a substrate 2.
Has 590. The substrate 2510, the substrate 2570, and the substrate 2590 all have flexibility.

The display unit 2501 has a plurality of pixels on the substrate 2510 and a plurality of wirings 2511 capable of supplying signals to the pixels. The plurality of wirings 2511 are routed to the outer peripheral portion of the substrate 2510, and a part thereof constitutes the terminal 2519. Terminal 2519 is FPC2509 (1
) And electrically connect.

The substrate 2590 includes a touch sensor 2595 and a plurality of wires 2598 that are electrically connected to the touch sensor 2595. The plurality of wirings 2598 are routed around the outer peripheral portion of the substrate 2590, and a part thereof constitutes the connection layer 2599. And the connection layer 2599 is FPC2509
It is electrically connected to (2). In FIG. 11B, for the sake of clarity, the electrodes, wiring, and the like of the touch sensor 2595 provided on the back surface side of the substrate 2590 are shown by solid lines.

As the touch sensor 2595, for example, a capacitive touch sensor can be applied. As the capacitance method, there are a surface type capacitance method, a projection type capacitance method and the like.

The projected capacitance method includes a self-capacitance method and a mutual capacitance method mainly due to the difference in the drive method. It is preferable to use the mutual capacitance method because simultaneous multipoint detection is possible.

First, a case where a projection type capacitance type touch sensor is applied will be described with reference to FIG. 11B. In the case of the projection type capacitance method, various sensors capable of detecting the proximity or contact of a detection target such as a finger can be applied.

The projection type capacitance type touch sensor 2595 has an electrode 2591 and an electrode 2592. The electrode 2591 and the electrode 2592 are electrically connected to different wirings of the plurality of wirings 2598. Further, as shown in FIGS. 11A and 11B, the electrode 2592 has a shape in which a plurality of quadrilaterals repeatedly arranged in one direction are connected in one direction by wiring 2594 at corners. Similarly, the electrode 2591 has a shape in which a plurality of quadrilaterals are connected at corners, but the connecting direction is a direction intersecting the direction in which the electrode 2592 is connected. The electrode 2591
The direction in which the electrodes are connected and the direction in which the electrodes 2592 are connected do not necessarily have to be orthogonal to each other, and may be arranged so as to form an angle of more than 0 degrees and less than 90 degrees.

It is preferable that the area of the intersection of the wiring 2594 with the electrode 2592 is as small as possible. As a result, the area of the region where the electrodes are not provided can be reduced, and the variation in transmittance can be reduced. As a result, it is possible to reduce the variation in the brightness of the light transmitted through the touch sensor 2595.

The shapes of the electrode 2591 and the electrode 2592 are not limited to this, and various shapes can be taken. For example, a plurality of electrodes 2591 may be arranged so as not to generate a gap as much as possible, and a plurality of electrodes 2592 may be provided via an insulating layer. At this time, two adjacent electrodes 2592
It is preferable to provide a dummy electrode electrically isolated from these between the electrodes because the area of the region having different transmittance can be reduced.

Next, the details of the touch panel 2000 will be described with reference to FIG. FIG. 12 (A) corresponds to a cross-sectional view between the alternate long and short dash lines X1-X2 shown in FIG. 11 (A).

The touch sensor 2595 includes electrodes 2591 and 2592 arranged in a houndstooth pattern on the substrate 2590, an insulating layer 2593 covering the electrodes 2591 and 2592, and adjacent electrodes 2.
It has a wiring 2594 that electrically connects the 591.

Further, an adhesive layer 2597 is provided below the wiring 2594. The adhesive layer 2597 has a substrate 2590 attached to the substrate 2570 so that the touch sensor 2595 overlaps the display unit 2501.

The electrode 2591 and the electrode 2592 are formed by using a conductive material having translucency. As the conductive material having translucency, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide to which gallium is added can be used.
A membrane containing graphene can also be used. The graphene-containing film can be formed by reducing, for example, a film-like graphene oxide-containing film. Examples of the method of reduction include a method of applying heat.

For example, a conductive material having translucency is formed on a substrate 2590 by a sputtering method, and then unnecessary parts are removed by various patterning techniques such as a photolithography method.
Electrodes 2591 and electrodes 2592 can be formed.

The material used for the insulating layer 2593 is, for example, a resin such as acrylic or epoxy.
In addition to the resin having a siloxane bond, an inorganic insulating material such as silicon oxide, silicon oxide nitride, or aluminum oxide can also be used.

Further, by forming the wiring 2594 in the opening provided in the insulating layer 2593, the adjacent electrodes 2591 are electrically connected. Since the translucent conductive material can increase the aperture ratio of the touch panel, it can be suitably used for wiring 2594. Also, the electrode 259
A material having a higher conductivity than that of No. 1 and the electrode 2592 can be suitably used for the wiring 2594 because the electric resistance can be reduced.

The pair of electrodes 2591 are electrically connected by wiring 2594. Further, an electrode 2592 is provided between the pair of electrodes 2591.

Further, the wiring 2598 is electrically connected to the electrode 2591 or the electrode 2592. note that,
A part of the wiring 2598 functions as a terminal. For the wiring 2598, for example, a metal material such as aluminum, gold, platinum, silver, nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or an alloy material containing the metal material can be used. can.

Further, the connection layer 2599 electrically connects the wiring 2598 and the FPC2509 (2). In addition, various anisotropic conductive films (ACF: Anisottr) are formed on the connection layer 2599.
opic Conducive Film) and anisotropic conductive paste (ACP: Ani)
Sotropic Conductive Paste) and the like can be used.

Further, the adhesive layer 2597 has translucency. For example, a thermosetting resin or an ultraviolet curable resin can be used, and specifically, an acrylic resin, a urethane resin, an epoxy resin, or a siloxane resin can be used.

The display unit 2501 has a plurality of pixels arranged in a matrix. The pixel has a display element and a pixel circuit for driving the display element.

As the substrate 2510 and the substrate 2570, for example, the transmittance of water vapor is ^10-5 g / (m ^2).
A flexible material with a day) or less, preferably ^10-6 g / (m ² · day) or less, can be preferably used. Alternatively, it is preferable to use a material in which the coefficient of thermal expansion of the substrate 2510 and the coefficient of thermal expansion of the substrate 2570 are approximately equal. For example, the coefficient of linear expansion is 1 × 10 ^{-3
Materials having a capacity of} / K or less, preferably 5 × ^10-5 / K or less, and more preferably 1 × 10-5 / K or less can be preferably used.

Further, the sealing layer 2560 preferably has a refractive index larger than that of air.

Further, the display unit 2501 has pixels 2502R. Further, the pixel 2502R has a light emitting module 2580R.

The pixel 2502R includes a light emitting element 2550R and a transistor 2502t capable of supplying electric power to the light emitting element 2550R. The transistor 2502t functions as a part of the pixel circuit. Further, the light emitting module 2580R has a light emitting element 2550R and a colored layer 2567R.

The light emitting element 2550R has a lower electrode, an upper electrode, and an EL layer between the lower electrode and the upper electrode.

When the sealing layer 2560 is provided on the side from which light is taken out, the sealing layer 2560 is in contact with the light emitting element 2550R and the colored layer 2567R.

The colored layer 2567R is located at a position where it overlaps with the light emitting element 2550R. As a result, the light emitting element 2
A part of the light emitted by the 550R passes through the colored layer 2567R and is emitted to the outside of the light emitting module 2580R in the direction of the arrow shown in the figure.

Further, the display unit 2501 is provided with a light shielding layer 2567BM in the direction of emitting light. The light-shielding layer 2567BM is provided so as to surround the colored layer 2567R.

Further, the display unit 2501 has an antireflection layer 2567p at a position overlapping the pixels. As the antireflection layer 2567p, for example, a circularly polarizing plate can be used.

The display unit 2501 is provided with an insulating layer 2521. The insulating layer 2521 is a transistor 25.
Cover 02t. The insulating layer 2521 has a function for flattening unevenness caused by the pixel circuit. Further, the insulating layer 2521 may be provided with a function capable of suppressing the diffusion of impurities.
As a result, it is possible to suppress a decrease in reliability of the transistor 2502t or the like due to diffusion of impurities.

Further, the light emitting element 2550R is formed above the insulating layer 2521. In addition, the light emitting element 25
The lower electrode of the 50R is provided with a partition wall 2528 that overlaps the end of the lower electrode. A spacer for controlling the distance between the substrate 2510 and the substrate 2570 may be formed on the partition wall 2528.

The scanning line drive circuit 2503g (1) has a transistor 2503t and a capacitance element 2503c. The drive circuit can be formed on the same substrate in the same process as the pixel circuit.

Further, a wiring 2511 capable of supplying a signal is provided on the substrate 2510. Further, a terminal 2519 is provided on the wiring 2511. Further, the terminal 2519 has an FPC.
2509 (1) is electrically connected. Further, the FPC2509 (1) has a function of supplying signals such as a pixel signal and a synchronization signal. A printed wiring board (PWB) may be attached to the FPC2509 (1).

Further, transistors having various structures can be applied to the display unit 2501. note that,
In FIG. 12A, a case where a bottom gate type transistor is applied is illustrated. For the transistor 2502t and the transistor 2503t shown in FIG. 12A, a semiconductor layer containing an oxide semiconductor can be used as a channel region. Alternatively, a semiconductor layer containing amorphous silicon can be used as the channel region for the transistor 2502t and the transistor 2503t. Alternatively, for the transistor 2502t and the transistor 2503t, a semiconductor layer containing polycrystalline silicon crystallized by a treatment such as laser annealing can be used as a channel region.

Further, FIG. 12 (FIG. 12) shows the configuration of the display unit 2501 when a top gate type transistor is applied.
Shown in B).

In the case of a top gate type transistor, in addition to the same configuration as the semiconductor layer that can be used for the bottom gate type transistor, a semiconductor layer including a single crystal silicon film transferred from a polycrystalline silicon or a single crystal silicon substrate or the like is provided. It may be used as a channel region.

Next, a touch panel having a configuration different from that shown in FIG. 12 will be described with reference to FIG.

FIG. 13 is a cross-sectional view of the touch panel 2001. The touch panel 2001 shown in FIG. 13 includes the touch panel 2000 shown in FIG. 12 and the touch sensor 2595 for the display unit 2501.
The position of is different. Here, the different configurations will be described in detail, and the description of the touch panel 2000 will be used for the parts where the same configurations can be used.

The colored layer 2567R is located at a position where it overlaps with the light emitting element 2550R. Further, the light emitting element 2550R shown in FIG. 13A emits light to the side where the transistor 2502t is provided.
As a result, a part of the light emitted by the light emitting element 2550R passes through the colored layer 2567R and is emitted to the outside of the light emitting module 2580R in the direction of the arrow shown in the drawing.

The display unit 2501 has a light-shielding layer 2567BM in the direction of emitting light. Shading layer 2567B
M is provided so as to surround the colored layer 2567R.

The touch sensor 2595 is provided on the substrate 2510 side of the display unit 2501 (FIG. 13 (FIG. 13).
See A)).

The adhesive layer 2597 is located between the substrate 2510 and the substrate 2590, and the display unit 2501 and the touch sensor 2595 are bonded together.

Further, transistors having various structures can be applied to the display unit 2501. note that,
FIG. 13A illustrates a case where a bottom gate type transistor is applied. Further, FIG. 13B illustrates a case where a top gate type transistor is applied.

Next, an example of the touch panel driving method will be described with reference to FIG.

FIG. 14A is a block diagram showing a configuration of a mutual capacitance type touch sensor. FIG. 14 (
In A), the pulse voltage output circuit 2601 and the current detection circuit 2602 are shown. In FIG. 14A, the electrode 2621 to which the pulse voltage is applied is designated as X1-X6, and the electrode 2622 that detects the change in current is designated as Y1-Y6. Further, FIG. 14A shows a capacitance 2 formed by overlapping the electrode 2621 and the electrode 2622.
603 is shown. The functions of the electrode 2621 and the electrode 2622 may be interchanged with each other.

The pulse voltage output circuit 2601 is a circuit for sequentially applying pulses to the wirings of X1-X6. By applying a pulse voltage to the wiring of X1-X6, an electric field is generated between the electrode 2621 forming the capacitance 2603 and the electrode 2622. The proximity or contact of the object to be detected can be detected by utilizing the fact that the electric field generated between the electrodes causes a change in the mutual capacitance of the capacitance 2603 due to shielding or the like.

The current detection circuit 2602 is a circuit for detecting a change in the current in the wiring of Y1-Y6 due to a change in the mutual capacitance in the capacitance 2603. In the wiring of Y1-Y6, there is no change in the current value detected when there is no proximity or contact of the detected object, but the current value when the mutual capacitance decreases due to the proximity or contact of the detected object to be detected. Detects a decreasing change. The current may be detected by using an integrator circuit or the like.

Next, FIG. 14 (B) shows a timing chart of input / output waveforms in the mutual capacitance type touch sensor shown in FIG. 14 (A). In FIG. 14B, it is assumed that the detected object is detected in each matrix in one frame period. Further, FIG. 14B shows two cases, a case where the detected object is not detected (non-touch) and a case where the detected object is detected (touch). The Y1-Y6 wiring shows a waveform with a voltage value corresponding to the detected current value.

Pulse voltages are applied to the wiring of X1-X6 in order, and Y1-Y is applied according to the pulse voltage.
The waveform in the wiring of 6 changes. When there is no proximity or contact of the object to be detected, the waveform of Y1-Y6 changes uniformly according to the change of the voltage of the wiring of X1-X6. On the other hand, since the current value decreases at the location where the object to be detected is close to or in contact with the object to be detected, the corresponding voltage value waveform also changes. By detecting the change in mutual capacitance in this way, the proximity or contact of the object to be detected can be detected.

Further, although FIG. 14A shows the configuration of a passive touch sensor in which only the capacitance 2603 is provided at the intersection of the wirings as the touch sensor, an active touch sensor having a transistor and a capacitance may be used. FIG. 15 shows an example of one sensor circuit included in the active touch sensor.

The sensor circuit shown in FIG. 15 has a capacitance of 2603, a transistor 2611, and a transistor 2.
It has 612 and a transistor 2613.

Transistor 2613 is given a signal G2 to the gate, a voltage VRES to one of the source or drain, and the other is electrically connected to one electrode of capacitance 2603 and the gate of transistor 2611. Transistor 2611 has one source or drain electrically connected to one of the source or drain of transistor 2612 and a voltage VSS to the other.
Is given. The transistor 2612 receives a signal G1 at the gate and the other of the source or drain is electrically connected to the wiring ML. Voltage VSS on the other electrode of capacitance 2603
Is given.

Next, the operation of the sensor circuit shown in FIG. 15 will be described. First, the potential for turning on the transistor 2613 is given as the signal G2, so that the potential corresponding to the voltage VRES is given to the node n to which the gate of the transistor 2611 is connected. Next, the potential of the node n is maintained by giving the potential to turn off the transistor 2613 as the signal G2. Subsequently, the potential of the node n changes from VRES as the mutual capacitance of the capacitance 2603 changes due to the proximity or contact of the object to be detected such as a finger.

The read operation gives the signal G1 a potential to turn on the transistor 2612. The current flowing through the transistor 2611, that is, the current flowing through the wiring ML, changes according to the potential of the node n. By detecting this current, the proximity or contact of the object to be detected can be detected.

As the transistor 2611, the transistor 2612, and the transistor 2613, it is preferable to use an oxide semiconductor layer for the semiconductor layer in which the channel region is formed. In particular, by applying such a transistor to the transistor 2613, it is possible to maintain the potential of the node n for a long period of time, and it is possible to reduce the frequency of the operation (refresh operation) of resupplying the VRES to the node n. can.

This embodiment can be implemented in combination with at least a part thereof as appropriate with other embodiments described in the present specification.

In this embodiment, a light emitting element (yellow light emitting element: light emitting element 1, blue light emitting element: light emitting element 2 and green light emitting element: light emitting element 3) and a comparative light emitting device constituting the light emitting device of the present invention are configured. Power consumption when white display is performed in each light emitting device using a light emitting element (yellow light emitting element: comparative light emitting element 1, blue light emitting element: comparative light emitting element 2 and red light emitting element: comparative light emitting element 3). The result of the trial calculation of is explained.

The light emitting elements 1 to 3 are yellow, blue, and green light emitting elements, and the comparative light emitting elements 1 to 3 are yellow, blue, and red light emitting elements because they emit white light (xy chromaticity) near D65. In coordinates (x
, Y) = (0.313, 0.329) light), which is necessary for obtaining the light. Since it is not necessary to use the red light in the light emitting device of the example and the green light in the light emitting device of the comparative example to obtain the white light emission, the description thereof is omitted in this embodiment.

The structural formulas of the organic compounds used in the light emitting element 1 to the light emitting element 3 and the comparative light emitting element 1 to the comparative light emitting element 3 are shown below.

(Method for manufacturing light emitting element 1 to light emitting element 3 and comparative light emitting element 1 to comparative light emitting element 3)
First, on a glass substrate, an alloy film of silver (Ag), palladium (Pd), and copper (Cu) (abbreviation::
APC) was formed into a film by a sputtering method to form a first electrode (reflection electrode). note that,
The film thickness was 100 nm, and the electrode area was 2 mm × 2 mm.

Next, an indium tin oxide containing silicon oxide as a transparent conductive film was formed on the first electrode by a sputtering method. The film thickness of the transparent conductive film was 30 nm for the light emitting element 1, 80 nm for the light emitting element 2, 30 nm for the light emitting element 3, 30 nm for the comparative light emitting element 1, 60 nm for the comparative light emitting element 2, and 60 nm for the comparative light emitting element 3. ..

Subsequently, as a pretreatment before vapor deposition of the organic compound layer, the surface of the substrate on which the reflective electrode and the transparent conductive film were formed was washed with water, fired at 200 ° C. for 1 hour, and then UV ozone treatment was performed for 370 seconds. ..

After that, the ^{substrate was introduced into a vacuum vapor deposition apparatus whose internal pressure was reduced to about 10-4} Pa, vacuum fired at 170 ° C. for 30 minutes in a heating chamber inside the vacuum vapor deposition apparatus, and then the substrate was released for about 30 minutes. It was chilled.

Next, the substrate was fixed to a substrate holder provided in the vacuum vapor deposition apparatus so that the surface on which the transparent conductive film was formed faced down, and the pressure inside the vacuum vapor deposition apparatus was reduced to about ^{10 -4 Pa.} After that, 3- [4- (
9-Phenyl) -Phenyl] -9-Phenyl-9H-Carbazole (abbreviation: PCP)
The first hole injection layer was formed by co-depositing Pn) and molybdenum oxide (VI). The film thickness is 60 nm for the light emitting element 1, 47.5 nm for the light emitting element 2, and 40 nm for the light emitting element 3.
The comparative light emitting element 1 was 55 nm, the comparative light emitting element 2 was 70 nm, and the comparative light emitting element 3 was 45 nm. The ratio of PCPPn to molybdenum oxide is 1: 0.5 by weight (= PCPPn:).
It was adjusted to be molybdenum oxide).

Next, PCPPn was formed on the first hole injection layer so as to have a film thickness of 10 nm to form the first hole transport layer.

Further, on the first hole transport layer, the light emitting element 1 to the light emitting element 3 are represented by the above structural formula (ii), 7- [4- (10-phenyl-9-anthryl) phenyl] -7H-dibenzo. [C,
g] Carbazole (abbreviation: cgDBCzPA) and N, represented by the above structural formula (iii).
N'-(pyrene-1,6-diyl) bis [(6, N-diphenylbenzo [b] naphtho [1]
, 2-d] furan) -8-amine] (abbreviation: 1,6BnfAPrn-03) and 25n so as to have a weight ratio of 1: 0.05 (= cgDBCzPA: 1,6BnfAPrn-03).
The first light emitting layer was formed by forming a film.

The comparative light emitting element 1 to the comparative light emitting element 3 have cgDBCzPA on the first hole transport layer and N, N'-bis (3-methylphenyl) -N, N'represented by the above structural formula (x). -Bis [3-
(9-Phenyl-9H-Fluorene-9-yl) Phenyl] -Pyrene-1,6-diamine (abbreviation: 1,6 mM FLPAPrn) with a weight ratio of 1: 0.05 (= cgDBC)
The first light emitting layer was formed by forming a 25 nm film so as to have zPA: 1,6 mM FLPAPrn).

Subsequently, cgDBCzPA was formed on the first light emitting layer so as to have a film thickness of 5 nm, and further,
Basophenanthroline (abbreviation: BPhen) represented by the above structural formula (iv) was formed into a film having a thickness of 15 nm to form a first electron transport layer.

After forming the first electron transport layer, lithium oxide (Li ₂ O) is vapor-deposited to a thickness of 0.1 nm, and then copper phthalocyanine (abbreviation: CuPc) represented by the above structural formula (xi) is deposited. To 2 nm, and further, 4,4', 4''- (benzene-1,3,5-triyl) tri (dibenzothiophene) (abbreviation: DBT3P-) represented by the above structural formula (v). II
) And molybdenum oxide (VI) were co-deposited so as to have a weight ratio of 1: 0.5 (= DBT3P-II: molybdenum oxide) to form an intermediate layer. The intermediate layer was formed so that the film thickness was 12.5 nm.

Then, 4-phenyl-4'-(9-phenylfluorene-9-yl) triphenylamine (abbreviation: BPAFLP) represented by the above structural formula (vi) is vapor-deposited on the intermediate layer at 20 nm to form a second positive. A hole transport layer was formed.

After forming the second hole transport layer, 2- [3'-(dibenzothiophen-4-yl) biphenyl-3-yl] dibenzo [f, h] quinoxaline represented by the above structural formula (vii) ( Abbreviation: 2mDBTBPDBq-II) and N- (1,1) represented by the above structural formula (viii).
'-Biphenyl-4-yl) -9,9-dimethyl-N- [4- (9-phenyl-9H-carbazole-3-yl) phenyl] -9H-fluorene-2-amine (abbreviation: PCBBi)
F) and bis {2- [5-methyl-6- (2-methylphenyl) -4-pyrimidinyl-κN3] phenyl-κC} (2,4-pentandionato) represented by the above structural formula (ix). −κ
² O, O') Iridium (III) (abbreviation: [Ir (mpmppm) ₂ (acac)])
And the weight ratio 0.8: 0.2: 0.06 (= 2mDBTBPDBq-II: PCBBiF)
: [Ir (mpmppm) ₂ (acac)]) was co-deposited to form a second light emitting layer. The film was formed so that the film thickness was 40 nm.

Subsequently, 2mDBTBPDBq-II is deposited on the second light emitting layer so as to have a thickness of 15 nm, and further, the light emitting elements 1 to 3 have a BPhen of 20 nm, and the comparative light emitting elements 1 to 3 have a BPhen of 15 nm. A second electron transport layer was formed by vapor deposition in this manner.

After that, lithium fluoride is vapor-deposited to 1 nm to form an electron-injected layer, and finally silver and magnesium are co-deposited to 15 nm at a ratio of 1: 0.1 (volume ratio), and the process is continued. I
A second electrode (semi-transmissive semi-reflective electrode) was formed by forming a 70 nm film of TO by a sputtering method to produce a light emitting element 1 to a light emitting element 3 and a comparative light emitting element 1 to a comparative light emitting element 3. In the above-mentioned vapor deposition process, vapor deposition by the resistance heating method was used.

A table summarizing the element structures of the light emitting element 1 to the light emitting element 3 and the comparative light emitting element 1 to the comparative light emitting element 3 is shown.

Work of sealing the light emitting element 1 to the light emitting element 3 and the comparative light emitting element 1 to the comparative light emitting element 3 with a glass substrate in a glove box having a nitrogen atmosphere so that the light emitting element is not exposed to the atmosphere (a seal material is sealed around the element). UV treatment (wavelength 365 nm, 6 J / cm) at the time of sealing
² ) After heat treatment at 80 ° C. for 1 hour), the initial characteristics were measured. The measurement was performed at room temperature (atmosphere maintained at 25 ° C.).

The luminance-current density characteristics of the light emitting elements 1 to 3 are shown in FIG. 16, and the current efficiency-luminance characteristics are shown in FIG.
7, the luminance-voltage characteristic is shown in FIG. 18, the current-voltage characteristic is shown in FIG. 19, and the chromaticity coordinate is shown in FIG.

Further, the brightness-current density characteristics of the comparative light emitting elements 1 to 3 are shown in FIG. 21, and the current efficiency-.
The luminance characteristic is shown in FIG. 22, the luminance-voltage characteristic is shown in FIG. 23, the current-voltage characteristic is shown in FIG. 24, and the chromaticity coordinate is shown in FIG. 25.

From FIGS. 20 and 25, the light emitting element 2 using 1,6BnfAPrn-03 is 1000c.
The chromaticity near d / m ² is (0.152, 0.037), and similarly, 1,6 mMe.
Since the chromaticity of the comparative light emitting element 2 using mFLPAPrn is (0.160, 0.087), it can be seen that the light emitting element 2 exhibits deeper blue light emission.

Here, the emission spectrum of 1,6BnfAPrn-03 in a toluene solution is shown in FIG. From FIG. 26, it was found that the peak wavelength of the emission spectrum of 1,6BnfAPrn-03 in the toluene solution exists at 450 nm. The half width of the spectrum was 40 nm. On the other hand, the peak wavelength of the emission spectrum in the toluene solution of 1.6 mM FLPAPrn used for the comparative light emitting device exists at 461 nm.

Subsequently, the power consumption of the light emitting device manufactured by using these elements in the white display near D65 was calculated. In estimating the power consumption of the light emitting device, the following conditions were assumed.

Table 3 shows the calculation results of the light emitting device of the example, and Table 4 shows the calculation results of the light emitting device of the comparative example.

In the above calculation result, the effective brightness is intrinsic brightness × aperture ratio × 1/4 (area ratio of subpixels (assuming a light emitting device in which one pixel consists of four subpixels of red, green, blue and yellow)) and the amount of current. Was calculated as current density × panel area × aperture ratio × 1/4 (area ratio of each subpixel), and the power consumption of the display unit was calculated as current amount × voltage.

^{From Tables 3 and 4, the light emitting device of the example has a brightness of 38 cd / m 2 of} blue light emission (light emission of the light emitting element 2) required to obtain white light emission near D65 as compared with the light emitting device of the comparative example. From 15c
It can be seen that it has decreased to d / m ^2. This is because the chromaticity of blue is improved and white light emission is obtained by using 1,6BnfAPrn-03, which is a fluorescent light emitting substance as shown in the first and second embodiments, as the blue light emitting material. This is because the effective brightness of blue light emission required for the above has decreased. Along with this, the power consumption required by the light emitting element 2 to obtain white light emission has been greatly reduced.

Further, the power consumption required by the comparative light emitting element 3 in order to obtain white light emission near D65 is 39.
While the power consumption is 1 mW, the power consumption required by the light emitting element 3 is 22.7 mW, and power saving can be achieved here as well.

This is because the light emission of the light emitting element 2 becomes a deep blue light emission, so that the color of the light emission obtained by combining the blue light emission and the yellow light emission of the light emitting element 1 changes, and white light emission near D65 is obtained. The reason is that the third emission color required for the above has changed. In the light emitting device of the embodiment, the third
Green emission is required as the emission color of, and red emission is required as the third emission color in the light emitting device of the comparative example, and the ratio of the brightness required from each emission color to obtain white emission is the emission of the example. The green light emission of the device became larger.

However, green light emission may have better visual sensitivity than red light emission, and the current efficiency of the light emitting element 3 which is a green light emitting element is about twice the current efficiency of the comparative light emitting element 3 which is a red light emitting element. It also becomes. Therefore, in the light emitting device of the embodiment, even if the ratio of the brightness of the third light emitting color (light emission of the light emitting element 3) for obtaining white light emission increases, the power consumption required by the light emitting element 3 can be increased. It has become possible to reduce the power consumption required by the comparative light emitting element 3.

In the light emitting device of the example, both the effective brightness of the light emitting element 2 (blue) and the light emitting element 3 (green) required to obtain white light emission near D65 of ^{300 cd / m 2 are the light emission of the comparative example.} Although it is smaller than the effective brightness of the comparative light emitting element 2 (blue) and the comparative light emitting element 3 (red) in the apparatus, the difference brightness is compensated by increasing the brightness of the yellow light emission of the light emitting element 1. ing. Since the current efficiency of the light emitting element 1 that emits yellow light is very high, the power consumption that has increased due to the increase in the required brightness becomes the power consumption that has been reduced due to the decrease in the required brightness of the light emitting element 2 and the light emitting element 3. It is absorbed and power consumption can be reduced.

As a result, the power consumption of the light emitting device of Example when white display is performed, 5.8 mW / cm ² in the case without the drive FET, became 14 mW / cm ² in the case including the drive FET. Since the power consumption of the light emitting device of the comparative example are each ^{7.1mW / cm 2, 16mW / cm} 2, it was possible to reduce the power consumption of 20% from about 10%. The power consumption when the drive FET is included is estimated by uniformly assuming that the voltage between the anode and the cathode (the total value of the voltage of the light emitting element portion and the drive FET portion) is 15V.

Since the blue light emitting element consumes a very large amount of power as compared with the light emitting elements of other colors, the effect of reducing the power consumption due to the change in chromaticity is large. Further, power saving can be obtained by changing the balance regarding the emission color and the ratio of the brightness thereof in order to obtain white emission near D65, and the light emitting device of the example using the fluorescent light emitting material as shown in the first embodiment can be obtained. Could be a light emitting device with low power consumption.

In this embodiment, the light emitting elements (red light emitting element: light emitting element 4, yellow light emitting element: light emitting element 5, green light emitting element: light emitting element 6 and blue light emitting element: light emitting element) constituting the light emitting device of the present invention. 7) and the light emitting elements constituting the comparative light emitting device (red light emitting element: comparative light emitting element 4, green light emitting element: comparative light emitting element 5 and blue light emitting element: comparative light emitting element 6) are used in each light emitting device. The result of the trial calculation of the power consumption when the white display is performed will be described.

The structural formulas of the organic compounds used in the light emitting elements 4 to 7 and the comparative light emitting elements 4 to 6 are shown below.

(Method for manufacturing light emitting element 4 to light emitting element 7 and comparative light emitting element 4 to comparative light emitting element 6)
First, on a glass substrate, an alloy film of silver (Ag), palladium (Pd), and copper (Cu) (abbreviation::
APC) was formed into a film by a sputtering method to form a first electrode (reflection electrode). note that,
The film thickness was 100 nm, and the electrode area was 2 mm × 2 mm.

Next, an indium tin oxide containing silicon oxide as a transparent conductive film was formed on the first electrode by a sputtering method. The film thickness of the transparent conductive film is 80 nm for the light emitting element 4 (red).
Light emitting element 5 (yellow) is 45 nm, light emitting element 6 (green) is 45 nm, and light emitting element 7 (blue) is 80 n.
m, the comparative light emitting element 4 (red) was set to 85 nm, the comparative light emitting element 5 (green) was set to 45 nm, and the comparative light emitting element 6 (blue) was set to 110 nm.

Subsequently, as a pretreatment before vapor deposition of the organic compound layer, the surface of the substrate on which the reflective electrode and the transparent conductive film were formed was washed with water, fired at 200 ° C. for 1 hour, and then UV ozone treatment was performed for 370 seconds. ..

After that, the ^{substrate was introduced into a vacuum vapor deposition apparatus whose internal pressure was reduced to about 10-4} Pa, vacuum fired at 170 ° C. for 30 minutes in a heating chamber inside the vacuum vapor deposition apparatus, and then the substrate was released for about 30 minutes. It was chilled.

Next, the substrate was fixed to a substrate holder provided in the vacuum vapor deposition apparatus so that the surface on which the transparent conductive film was formed faced down, and the pressure inside the vacuum vapor deposition apparatus was reduced to about ^{10 -4 Pa.} After that, 3- [4- (
9-Phenyl) -Phenyl] -9-Phenyl-9H-Carbazole (abbreviation: PCP)
The first hole injection layer was formed by co-depositing Pn) and molybdenum oxide (VI). The film thickness is 30 nm for the light emitting element 4 (red), 40 nm for the light emitting element 5 (yellow), 22.5 nm for the light emitting element 6 (green), 50 nm for the light emitting element 7 (blue), and the comparative light emitting element 4 (red). 10 nm, the comparative light emitting element 5 (green) was 10 nm, and the comparative light emitting element 6 (blue) was 15 nm. Also, PCP
The ratio of Pn to molybdenum oxide is 1: 0.5 by weight (= PCPPn: molybdenum oxide).
It was adjusted to be.

Next, on the first hole injection layer, PCPPn is formed so that the light emitting element 4 to the light emitting element 7 have a film thickness of 10 nm, and the comparative light emitting element 4 to the comparative light emitting element 6 have a film thickness of 15 nm. A film was formed to form a first hole transport layer.

Further, on the first hole transport layer, 7- [4- (10-phenyl-9-anthryl) phenyl] -7H-dibenzo [c, g] carbazole (abbreviated as abbreviation) represented by the above structural formula (ii). : C
gDBCzPA) and N, N'-(pyrene-1,6-diyl) bis [(6, N-diphenylbenzo [b] naphtho [1,2-d] furan) represented by the above structural formula (iii)) -8-Amine] (abbreviation: 1,6BnfAPrn-03) in a weight ratio of 1: 0.05 (= cgDBC)
The first light emitting layer was formed by forming a 25 nm film so as to have zPA: 1,6BnfAPrn-03).

Subsequently, cgDBCzPA was formed on the first light emitting layer so as to have a film thickness of 5 nm, and further,
Basophenanthroline (abbreviation: BPhen) represented by the above structural formula (iv) was formed into a film having a thickness of 15 nm to form a first electron transport layer.

After forming the first electron transport layer, lithium oxide (Li ₂ O) is vapor-deposited so as to have a film thickness of 0.1 nm, and copper phthalocyanine (abbreviation: CuPc) represented by the above structural formula (xi) is obtained. 2n
It is vapor-deposited so as to be m, and further, 4,4', 4''- (benzene-1,3,5-triyl) tri (dibenzothiophene) (abbreviation: DBT3P-II) represented by the above structural formula (v). ) And molybdenum oxide in a weight ratio of 1: 0.5 (= DBT3P-II: molybdenum oxide) to form an intermediate layer. The intermediate layer was formed so that the film thickness was 12.5 nm.

Then, 4-phenyl-4'-(9-phenylfluorene-9-yl) triphenylamine (abbreviation: BPAFLP) represented by the above structural formula (vi) is vapor-deposited on the intermediate layer at 20 nm to form a second positive. A hole transport layer was formed.

After forming the second hole transport layer, in the light emitting element 4 to the light emitting element 7, 2- [3'-(dibenzothiophen-4-yl) biphenyl-3-yl] represented by the above structural formula (vii). Dibenzo [f, h] quinoxaline (abbreviation: 2mDBTBPDBq-II) and the above structural formula (vi)
N- (1,1'-biphenyl-4-yl) -9,9-dimethyl-N-[represented by ii)
4- (9-Phenyl-9H-carbazole-3-yl) phenyl] -9H-fluorene-
2-Amine (abbreviation: PCBBiF) and screw {2- [5-] represented by the above structural formula (ix)
Methyl-6- (2-methylphenyl) -4-pyrimidinyl-κN3] phenyl-κC} (
2,4-Pentane dionato-κ ² O, O') Iridium (III) (abbreviation: [Ir (mp)
mppm) ₂ (acac)]) and weight ratio 0.8: 0.2: 0.06 (= 2mDBTB)
PDBq-II: PCBBiF: [Ir (mpmppm) ₂ (acac)]) was co-deposited to form a second light emitting layer. The film was formed so that the film thickness was 40 nm.

In the comparative light emitting element 4 to the comparative light emitting element 6, after forming the second hole transport layer, 2 mDBTB
PDBq-II, PCBBiF, and a screw represented by the above structural formula (xii) [2- (6- (6- (6-)
tert-Butyl-4-pyrimidinyl-κN3) Phenyl-κC] (2,4-pentanedionato-κ ² O, O') Iridium (III) (abbreviation: [Ir (tBuppm) ₂ (ac)
ac)]) by weight ratio 0.7: 0.3: 0.06 (= 2mDBTBPDBq-II:
PCBiF: [Ir (tBuppm) ₂ (acac)]) 20 nm co-deposited, then 2 mDBTBPDBq-II and screws {4,6 represented by the above structural formula (xiii)
-Dimethyl-2- [5- (2,6-dimethylphenyl) -3- (3,5-dimethylphenyl) -2-pyrazinyl-κN] phenyl-κC} (2,8-dimethyl-4,6-nonandionato) -Κ ² O, O') Iridium (III) (abbreviation: [Ir (dmdppr-dmp))
₂ (divm)]) in weight ratio of 1: 0.06 (= 2mDBTBPDBq-II: [Ir
(Dmdppr-dmp) ₂ (divm)]) was co-deposited at 20 nm to form a second light emitting layer.

Subsequently, 2mDBTBPDBq-II is deposited on the second light emitting layer so as to be 15 nm in the light emitting element 4 to 7 and 30 nm in the comparative light emitting element 4 to the comparative light emitting element 6, and further 2 mDBTBPDBq-. BPhen on II, light emitting element 4 to light emitting element 7
The second electron transport layer was formed by vapor deposition so as to be 20 nm in the comparative light emitting element 4 to 15 nm in the comparative light emitting element 4 to the comparative light emitting element 6.

After that, lithium fluoride is vapor-deposited to 1 nm to form an electron-injected layer, and finally silver and magnesium are co-deposited to 15 nm at a ratio of 1: 0.1 (volume ratio), and the process is continued. I
A second electrode (semi-transmissive semi-reflective electrode) was formed by forming a 70 nm film of TO by a sputtering method to produce a light emitting element 4 to a light emitting element 7 and a comparative light emitting element 4 to a comparative light emitting element 6. In the above-mentioned vapor deposition process, vapor deposition by the resistance heating method was used.

A table summarizing the element structures of the light emitting element 4 to the light emitting element 7 and the comparative light emitting element 4 to the comparative light emitting element 6 is shown.

Work of sealing the light emitting element 4 to the light emitting element 7 and the comparative light emitting element 4 to the comparative light emitting element 6 with a glass substrate in a glove box having a nitrogen atmosphere so that the light emitting element is not exposed to the atmosphere (a seal material is sealed around the element). UV treatment (wavelength 365 nm, 6 J / cm) at the time of sealing
² ) After heat treatment at 80 ° C. for 1 hour), the initial characteristics were measured. The measurement was performed at room temperature (atmosphere maintained at 25 ° C.).

The luminance-current density characteristics of the light emitting elements 4 to 7 are shown in FIG. 28, and the current efficiency-luminance characteristics are shown in FIG.
9, the luminance-voltage characteristic is shown in FIG. 30, the current-voltage characteristic is shown in FIG. 31, and the chromaticity coordinate is shown in FIG.

Further, the brightness-current density characteristics of the comparative light emitting elements 4 to 6 are shown in FIG. 33, and the current efficiency-.
The luminance characteristic is shown in FIG. 34, the luminance-voltage characteristic is shown in FIG. 35, and the current-voltage characteristic is shown in FIG. 36.

Subsequently, the power consumption of the light emitting device manufactured by using these elements in the white display near D65 was calculated. In estimating the power consumption of the light emitting device, the following conditions were assumed.

Table 7 shows the calculation results of the light emitting device of the example, and Table 8 shows the calculation results of the light emitting device of the comparative example.

In the above calculation result, the effective brightness is intrinsic brightness × aperture ratio × 1/4 (area ratio of subpixels (assuming a light emitting device in which one pixel consists of four subpixels of red, green, blue and yellow)) and the amount of current. Was calculated as current density × panel area × aperture ratio × 1/4 (area ratio of each subpixel), and the power consumption of the display unit was calculated as current amount × voltage.

From Tables 7 and 8, the power consumption for producing white was 394 mW in the light emitting device of the comparative example and 266 mW in the light emitting device of the example, and the light emitting device of the example had lower power consumption. In the light emitting device of the comparative example, when white is emitted, both the comparative light emitting element 4 (red) and the comparative light emitting element 5 (green) require a certain percentage of intrinsic brightness. On the other hand, when white is emitted by the light emitting device of the embodiment, the light emitting element 4 (red) does not emit light, and the light emitting element 6 (green) also ^{has a small emission brightness of 139 cd / m 2,} which has almost an effect on power consumption. Not. That is, in the light emitting device of the embodiment, when white is emitted, only the light emitting element 7 (blue) and the light emitting element 5 (yellow) are made to emit light. Since the current efficiency of the light emitting element 5 (yellow) is as high as 137 cd / A, although the power consumption of the blue element is about the same in the light emitting device of the comparative example and the light emitting device of the embodiment, the light emitting device of the embodiment The light emitting device was able to realize a significant reduction in power consumption as compared with the light emitting device of the comparative example.

The result of estimating the luminance deterioration when the ^{white display around D65 is performed at 300 cd / m 2} by the light emitting device of one aspect of the present invention is shown. In this embodiment, the light emitting element 8 (blue) and the light emitting element 9 (yellow) having the same structure as the light emitting element constituting the light emitting device of one aspect of the present invention have an initial brightness of 300 cd / m under the condition of constant current density. ^A drive test was performed at ² to 3000 cd / m 2. The initial brightness of each light emitting element was set to a value close to the brightness required to obtain a white display near D65 in the light emitting device of one aspect of the present invention under the conditions shown in the table below. The drive test was performed on the assumption that the white display was performed because the white display, which is continuously lit, is the condition in which deterioration is most likely to proceed.

As for the red element and the green element, since the light is extracted from the yellow light emitting layer,
2 Because it is considered to exhibit the same deterioration behavior as the yellow light emitting element, and because the brightness required for white display near D65 as shown in Example 2 is small and the rate-determining factor of reliability is not obtained. Not measured because of points.

The structural formulas of the organic compounds used in the light emitting element 8 and the light emitting element 9 are shown below.

(Method for manufacturing light emitting element 8 and light emitting element 9)
First, on a glass substrate, an alloy film of silver (Ag), palladium (Pd), and copper (Cu) (abbreviation::
APC) was formed into a film by a sputtering method to form a first electrode (reflection electrode). note that,
The film thickness was 100 nm, and the electrode area was 2 mm × 2 mm.

Next, an indium tin oxide containing silicon oxide as a transparent conductive film was formed on the first electrode by a sputtering method. The film thickness of the transparent conductive film is 85 nm for the light emitting element 8 (blue).
The light emitting element 9 (yellow) was set to 65 nm.

Subsequently, as a pretreatment before vapor deposition of the organic compound layer, the surface of the substrate on which the reflective electrode and the transparent conductive film were formed was washed with water, fired at 200 ° C. for 1 hour, and then UV ozone treatment was performed for 370 seconds. ..

After that, the ^{substrate was introduced into a vacuum vapor deposition apparatus whose internal pressure was reduced to about 10-4} Pa, vacuum fired at 170 ° C. for 30 minutes in a heating chamber inside the vacuum vapor deposition apparatus, and then the substrate was released for about 30 minutes. It was chilled.

Next, the substrate was fixed to a substrate holder provided in the vacuum vapor deposition apparatus so that the surface on which the transparent conductive film was formed was facing downward. After that, 9-phenyl-3- [4- (10-phenyl-9-anthryl) phenyl] -9H- represented by the above structural formula (xiv) by a vapor deposition method using resistance heating on a transparent conductive film. Carbazole (abbreviation: PCzPA) and molybdenum oxide (VI)
Was co-deposited to form a first hole injection layer. The film thickness is 4 for the light emitting element 8 (blue).
The light emitting element 9 (yellow) was set to 0 nm and 45 nm. The ratio of PCzPA to molybdenum oxide was adjusted to be 1: 0.5 (= PCzPA: molybdenum oxide) by weight.

Next, PCzPA was formed on the first hole injection layer so as to have a film thickness of 20 nm to form the first hole transport layer.

Further, on the first hole transport layer, 7- [4- (10-phenyl-9-anthryl) phenyl] -7H-dibenzo [c, g] carbazole (abbreviated as abbreviation) represented by the above structural formula (ii). : C
gDBCzPA) and N, N'-(pyrene-1,6-diyl) bis [(6, N-diphenylbenzo [b] naphtho [1,2-d] furan) represented by the above structural formula (iii)) -8-Amine] (abbreviation: 1,6BnfAPrn-03) in a weight ratio of 1: 0.03 (= cgDBC)
The first light emitting layer was formed by forming a 25 nm film so as to have zPA: 1,6BnfAPrn-03).

Subsequently, cgDBCzPA is formed on the first light emitting layer so as to have a film thickness of 10 nm, and vasofenanthroline (abbreviation: BPhen) represented by the above structural formula (vi) is further formed at 10 nm.
The first electron transport layer was formed by forming a film so as to be.

After forming the first electron transport layer, lithium oxide (Li ₂ O) is vapor-deposited so as to have a film thickness of 0.1 nm, and copper phthalocyanine (abbreviation: CuPc) represented by the above structural formula (xi) is obtained. 2n
Evaporate to a weight of m, and then add PCzPA and molybdenum oxide in a weight ratio of 1: 0.5 (=).
An intermediate layer was formed by co-depositing to form PCzPA (molybdenum oxide). The intermediate layer was formed so that the film thickness was 12.5 nm.

Then, PCzPA was deposited at 20 nm on the intermediate layer to form a second hole transport layer.

After forming the second hole transport layer, 2- [3'-(dibenzothiophen-4-yl) biphenyl-3-yl] dibenzo [f, h] quinoxaline represented by the above structural formula (vii) ( Abbreviation: 2mDBTBPDBq-II) and N- (1,1) represented by the above structural formula (viii).
'-Biphenyl-4-yl) -9,9-dimethyl-N- [4- (9-phenyl-9H-carbazole-3-yl) phenyl] -9H-fluorene-2-amine (abbreviation: PCBBi)
F) and bis {2- [5-methyl-6- (2-methylphenyl) -4-pyrimidinyl-κN3] phenyl-κC} (2,4-pentandionato) represented by the above structural formula (ix). −κ
² O, O') Iridium (III) (abbreviation: [Ir (mpmppm) ₂ (acac)])
And the weight ratio 0.8: 0.2: 0.06 (= 2mDBTBPDBq-II: PCBBiF)
: [Ir (mpmppm) ₂ (acac)]) was co-deposited to form a second light emitting layer. The film was formed so that the film thickness was 40 nm.

Subsequently, 2mDBTBPDBq-II was deposited on the second light emitting layer so as to have a thickness of 15 nm, and BPhen was further deposited on the 2mDBTBPDBq-II so as to have a thickness of 20 nm to form a second electron transport layer.

After that, lithium fluoride is vapor-deposited to 1 nm to form an electron-injected layer, and finally silver and magnesium are co-deposited to 15 nm at a ratio of 1: 0.1 (volume ratio), and the process is continued. I
A second electrode (semi-transmissive semi-reflective electrode) was formed by forming a 70 nm film of TO by a sputtering method to produce a light emitting element 8 (blue) and a light emitting element 9 (yellow). In the above-mentioned vapor deposition process, vapor deposition by the resistance heating method was used.

A table summarizing the element structures of the light emitting element 8 and the light emitting element 9 is shown.

The light emitting element 8 (blue) and the light emitting element 9 (yellow) are placed in a glove box having a nitrogen atmosphere.
Work to seal the light emitting element with a glass substrate so that it is not exposed to the atmosphere (apply a sealing material around the element, UV treatment at the time of sealing (wavelength 365 nm, 6 J / cm ² ), heat treatment at 80 ° C for 1 hour) After that, the initial characteristics were measured. The measurement was performed at room temperature (atmosphere maintained at 25 ° C.). Further, the measurement was performed through a color filter in which the light emitting element 8 was blue and the light emitting element 9 was yellow.

The brightness-current density characteristics of the light emitting element 8 (blue) and the light emitting element 9 (yellow) are shown in FIG. 39, the current efficiency-luminance characteristics are shown in FIG. 40, the brightness-voltage characteristics are shown in FIG. 41, and the current-voltage characteristics are shown in FIG. 42. The emission spectrum is shown in FIG. 43. As described above, the light emitting element 8 and the light emitting element 9 showed good characteristics.

Subsequently, the light emitting element 8 (blue), the light emitting element 9 respectively and the initial luminance ^{300cd / m 2, 3000cd / m} 2 at the constant current density of (yellow), was subjected to driving test. Initial brightness is 10
FIG. 44 shows a graph showing the change in brightness with respect to the driving time, standardized to 0%.

From this graph, it takes about 230 time for the light emitting element 8 to deteriorate to 90% of the initial brightness.
Similarly, the time required for the light emitting element 9 was about 6000 hours for 0 hours. From this result, it was found that the light emitting device of one aspect of the present invention is a light emitting device having very low power consumption, but has low brightness deterioration and reliability that can withstand practical use.

In this example, a 254 ppi light emitting device was actually manufactured by a white color filter method.
A display photograph of the produced light emitting device is shown in FIG. 37. As the sub-pixels, red, yellow, green, and blue pixels are 50 μm × 50 μm, respectively, and are arranged in a paddy shape. FIG. 38 shows a comparison of power consumption of the light emitting device and the light emitting device of the comparison example of the white color filter method using red, green, and blue pixels when displaying a still image. The power consumption is calculated for the panel portion of various still images with the peak brightness of 300 cd / m ^2.

It is clear from FIG. 38 that the light emitting device of the example consumes less power than the light emitting device of the comparative example. In particular, the effect of the present invention on reducing power consumption is remarkable in an image having many white display units.
It should be noted that the panel power consumption per unit area is lower as the still image display is black, with the white main display as the peak. This is because, unlike the liquid crystal that needs to keep the backlight on, the OLED does not emit light in the case of black display.

(Reference example)
In this reference example, the organic compound used in the examples, N, N'-(pyrene-1,6-diyl) bis [(6, N-diphenylbenzo [b] naphtho [1,2-d] furan)- 8-Amine] (abbreviation: 1,6BnfAPrn-03) will be described. In addition, 1,6BnfA
The structure of Prn-03 is shown below.

<Step 1: Synthesis of 6-iodobenzo [b] naphtho [1,2-d] franc>
8.5 g (39 mmol) of benzo [b] naphtho [1,2-
d] After adding furan and replacing the inside of the flask with nitrogen, 195 mL of tetrahydrofuran (T)
HF) was added. Cool the solution to -75 ° C and then add 25 mL (40 mmo) to this solution.
l) n-Butyllithium (1.59 mol / L n-hexane solution) was added dropwise. After the dropping, the obtained solution was stirred at room temperature for 1 hour.

After a lapse of a predetermined time, the solution was cooled to −75 ° C., and then a solution prepared by dissolving 10 g (40 mmol) of iodine in 40 mL of THF was added dropwise. After the dropping, the obtained solution was stirred for 17 hours while returning to room temperature. After a lapse of a predetermined time, an aqueous sodium thiosulfate solution was added to the mixture, and the mixture was stirred for 1 hour. Then, the organic layer of the mixture was washed with water, and the organic layer was dried over magnesium sulfate. After drying, the mixture is naturally filtered, and the obtained solution is suctioned through Celite (Wako Pure Chemical Industries, Ltd., catalog number: 531-16855) and Florisil (Wako Pure Chemical Industries, Ltd., catalog number: 540-00135). It was filtered. The solid obtained by concentrating the obtained filtrate was recrystallized from toluene, and the yield of the target white powder was 6.0 g (18).
mmol), yield 45%. The synthesis scheme of step 1 is shown below.

<Step 2: ... Synthesis of 6-Phenylbenzo [b] Naft [1,2-d] Franc>
In a 200 mL three-necked flask, 6.0 g (18 mmol) of 6-iodobenzo [b] naphtho [1,2-d] furan, 2.4 g (19 mmol) of phenylboronic acid, 70 mL of toluene, and 20 mL of ethanol. , 22 mL aqueous potassium carbonate solution (2.0 mol /
L) was added. The mixture was degassed by stirring while reducing the pressure. After degassing, the inside of the flask was placed under nitrogen, and then 480 mg (0.42 mmol) of tetrakis (triphenylphosphine) palladium (0) was added. The mixture was stirred at 90 ° C. for 12 hours under a nitrogen stream.

After a lapse of time, water was added to the mixture and the aqueous layer was extracted with toluene. The obtained extract and the organic layer were combined, washed with water, and dried over magnesium sulfate. The mixture was naturally filtered and the resulting filtrate was concentrated and the resulting solid was dissolved in toluene. The obtained solution was used as Celite (Wako Pure Chemical Industries, Ltd., Catalog No .: 531-16855), Florisil (Wako Pure Chemical Industries, Ltd.)
Wako Pure Chemical Industries, Ltd., Catalog No .: 540-00135), suction filtration was performed through alumina. The solid obtained by concentrating the obtained filtrate was recrystallized from toluene to obtain the desired white solid in a yield of 4.9 g (17 mmol) and a yield of 93%. The synthesis scheme of step 2 is shown below.

<Step 3: Synthesis of 8-iodo-6-phenylbenzo [b] naphtho [1,2-d] franc>
To a 300 mL three-necked flask, 4.9 g (17 mmol) of 6-phenylbenzo [b] naphtho [1,2-d] furan was added, the inside of the flask was replaced with nitrogen, and then 87 mL of tetrahydrofuran (THF) was added. Cool the solution to -75 ° C and then add 11 mL to this solution (
18 mmol) of n-butyllithium (1.59 mol / L n-hexane solution) was added dropwise. After the dropping, the obtained solution was stirred at room temperature for 1 hour. After a lapse of a predetermined time, the solution was cooled to −75 ° C., and then a solution prepared by dissolving 4.6 g (18 mmol) of iodine in 18 mL of THF was added dropwise.

The obtained solution was stirred for 17 hours while returning to room temperature. After a lapse of a predetermined time, an aqueous sodium thiosulfate solution was added to the mixture, and the mixture was stirred for 1 hour. Then, the organic layer of the mixture was washed with water, and the organic layer was dried over magnesium sulfate. The filtrate obtained by spontaneously filtering this mixture is suction-filtered through Celite (Wako Pure Chemical Industries, Ltd., catalog number: 531-16855), Florisil (Wako Pure Chemical Industries, Ltd., catalog number: 540-00135), and alumina. bottom. The solid obtained by concentrating the obtained filtrate was recrystallized from toluene to obtain the desired white solid in a yield of 3.7 g (8.8 mmol) and a yield of 53%. The synthesis scheme of step 3 is shown below.

<Step 4: Synthesis of 1,6BnfAPrn-03>
0.71 g (2.0 mmol) of 1,6-dibromopyrene, 1.0 g (10.4 mmol) of sodium tert-butoxide, and 10 m of toluene in a 100 mL three-necked flask.
L, 0.36 mL (4.0 mmol) of aniline, and 0.3 mL of a 10 wt% hexane solution of tri (tert-butyl) phosphine were added, and the inside of the flask was replaced with nitrogen. 50 mg (85 μmol) of bis (dibenzylideneacetone) palladium (0) was added to this mixture, and the mixture was stirred at 80 ° C. for 2 hours.

After a lapse of time, 1.7 g (4.0 mmol) of 8-iodo-6-phenylbenzo [b] naphtho [1,2-d] furan and 180 mg (0.44 mmol) of 2 were added to the resulting mixture. -Dicyclohexylphosphino-2', 6'-dimethoxybiphenyl (abbreviated as S-Pho)
s) and 50 mg (85 μmol) of bis (dibenzylideneacetone) palladium (0)
Was added, and the mixture was stirred at 100 ° C. for 15 hours. After a lapse of a predetermined time, the obtained mixture was filtered through Celite (Wako Pure Chemical Industries, Ltd., Catalog No .: 531-16855). The solid obtained by concentrating the obtained filtrate was washed with ethanol and recrystallized from toluene to obtain 1.38 g (1.4 mmol) of the desired yellow solid in a yield of 71%.

1.37 mg (1.4 mmol) of the obtained yellow solid was sublimated and purified by the train sublimation method. Sublimation purification was carried out by heating the yellow solid at 370 ° C. under the conditions of an argon flow rate of 10 mL / min and a pressure of 2.3 Pa. After sublimation purification, 0.68 g (0.70 mm) of yellow solid
ol), obtained with a recovery rate of 50%. The synthesis scheme of step 4 is shown below.

The analysis results of the yellow solid obtained in step 4 by nuclear magnetic resonance spectroscopy ( ¹ H NMR) are shown below. From this result, it was found that 1,6BnfAPrn-03 was obtained.

^{1 1} H NMR (dichloromethane-d2, 500 MHz): δ = 6.88 (t, J = 7.7)
Hz, 4H), 7.03-7.06 (m, 6H), 7.11 (t, J = 7.5Hz, 2H)
), 7.13 (d, J = 8.0Hz, 2H), 7.28-7.32 (m, 8H), 7.3
7 (t, J = 8.0Hz, 2H), 7.59 (t, J = 7.2Hz, 2H), 7.75 (
t, J = 7.7Hz, 2H), 7.84 (d, J = 9.0Hz, 2H), 7.88 (d,
J = 8.0Hz, 2H), 8.01 (s, 2H), 8.07 (d, J = 8.0Hz, 4H)
), 8.14 (d, J = 9.0Hz, 2H), 8.21 (d, J = 8.0Hz, 2H),
8.69 (d, J = 8.5Hz, 2H).

101 First electrode 102 Second electrode 103a EL layer 103b EL layer 104a Hole injection layer 104b Hole injection layer 105a Hole transport layer 105b Hole transport layer 106 Light emitting layer 106a Light emitting layer 106b Light emitting layer 107a Electron transport layer 107b Electron transport layer 108a Electron injection layer 108b Electron injection layer 109 Charge generation layer 113 First light emitting layer 114 Second light emitting layer 121 Guest material (fluorescent material)
122 Host material 131 Guest material (Phosphorescent material)
132 First Organic Compound 133 Second Organic Compound 134 Excitation Complex 501 Substrate 502 FET
503 First electrode 504 Partition 505 EL layer 506R Light emitting area 506G Light emitting area 506B Light emitting area 506W Light emitting area 506Y Light emitting area 507R Light emitting element 507G Light emitting element 507B Light emitting element 507W Light emitting element 507Y Light emitting element 508R Colored layer 508G Colored layer 508B Colored layer 509 Black layer (black matrix)
510 Second electrode 511 Encapsulation board 601 Element board 602 Pixel part 603 Drive circuit part (source line drive circuit)
604a Drive circuit section (gate line drive circuit)
604b Drive circuit section (gate line drive circuit)
605 Sealing material 606 Encapsulating board 607 Wiring 608 FPC (Flexible printed circuit)
609 FET
610 FET
611 Switching FET
612 Current control FET
613 First electrode (anode)
614 Insulation 615 EL layer 616 Second electrode (cathode)
617 Light emitting element 618 Space 1100 Substrate 1102B First electrode 1102G First electrode 1102Y First electrode 1102R First electrode 1103d Blue light emitting layer 1103e Hole injection layer and hole transport layer 1103f Yellow light emitting layer 1103h Electron transport layer and Electron injection layer 1104 Second electrode 1105 Black matrix 1106B Color filter 1106G Color filter 1106Y Color filter 1106R Color filter 1101 Encapsulation board 2000 Touch panel 2001 Touch panel 2501 Display 2502R Pixel 2502t Transistor 2503c Capacitive element 2503g Scanning line drive circuit 2503t Transistor 2509 FPC
2510 Board 2511 Wiring 2519 Terminal 2521 Insulation layer 2528 Partition 2550R Light emitting element 2560 Sealing layer 2567BM Light shielding layer 2567p Anti-reflection layer 2567R Colored layer 2570 Board 2580R Light emitting module 2590 Board 2591 Electrode 2592 Electrode 2595 Insulation layer 2594 Wiring 2595 Touch sensor 2597 2598 Wiring 2599 Connection layer 2601 Pulse voltage output circuit 2602 Current detection circuit 2603 Capacity 2611 Transistor 2612 Transistor 2613 Transistor 2621 Electrode 2622 Electrode 7100 Television device 7101 Housing 7103 Display unit 7105 Stand 7107 Display unit 7109 Operation key 7110 Remote control controller 7201 Main unit 7202 Housing 7203 Display 7204 Keyboard 7205 External connection port 7206 Pointing device 7302 Housing 7304 Display panel 7305 Time icon 7306 Other icons 7311 Operation button 7312 Operation button 7313 Connection terminal 7321 Band 7322 Clasp 7400 Mobile phone 7401 Housing 7402 Display 7403 Operation button 7404 External connection 7405 Speaker 7406 Microphone 7407 Camera 7500 (1) Housing 7500 (2) Housing 7501 (1) Display 7501 (2) Display 7502 (1) Display 7502 (2) ) Display unit 8001 Lighting device 8002 Lighting device 8003 Lighting device 8004 Lighting device 9310 Mobile information terminal 9311 Display panel 9312 Display area 9313 Hinge 9315 Housing

Claims (8)

A light emitting device having a first light emitting element, a second light emitting element, a third light emitting element, and a fourth light emitting element.
The first light emitting element to the fourth light emitting element has a first light emitting layer containing a fluorescent light emitting substance exhibiting blue light emission and a second light emitting layer containing a phosphorescent light emitting substance exhibiting yellow light emission. ,
The fluorescent luminescent substance has a peak wavelength of the emission spectrum in a toluene solution located between 440 nm and 460 nm.
The phosphorescent substance has a peak wavelength of the emission spectrum located between 555 nm and 590 nm.
The first light emitting element has a function of being able to emit blue light.
The second light emitting element has a function of being able to emit green light.
The third light emitting element is a light emitting device having a function of emitting red light. A light emitting device having a first light emitting element, a second light emitting element, a third light emitting element, and a fourth light emitting element.
The first light emitting element to the fourth light emitting element includes a first light emitting layer containing a fluorescent light emitting substance exhibiting blue light emission, a second light emitting layer containing a phosphorescent light emitting substance exhibiting yellow light emission, and a charge generation layer. And have
The charge generation layer is provided between the first light emitting layer and the second light emitting layer.
The fluorescent luminescent substance has a peak wavelength of the emission spectrum in a toluene solution located between 440 nm and 460 nm.
The phosphorescent substance has a peak wavelength of the emission spectrum located between 550 nm and 590 nm.
The first light emitting element has a function of being able to emit blue light.
The second light emitting element has a function of being able to emit green light.
The third light emitting element is a light emitting device having a function of emitting red light. In claim 1 or 2,
A light emitting device having a half width of the emission spectrum of the fluorescent substance in a toluene solution of 20 nm or more and 50 nm or less. In any one of claims 1 to 3,
The first light emitting layer is a light emitting device containing a host material having a T1 level lower than the T1 level of the fluorescent light emitting substance. In any one of claims 1 to 4,
The second light emitting layer is a light emitting device containing a first organic compound and a second organic compound which are combinations forming an excitation complex. In any one of claims 1 to 5,
A light emitting device in which the chromaticity of the first light emitting element is x = 0.13 or more and 0.17 or less and y = 0.03 or more and 0.07 or less in xy chromaticity coordinates. The light emitting device according to any one of claims 1 to 6.
With connection terminals or operation keys,
Electronic equipment with. The light emitting device according to any one of claims 1 to 6, the housing, and the housing.
Lighting device with.

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