JP2021170567A - Holding device and manufacturing method thereof - Google Patents

Abstract

To provide a holding device and a manufacturing method thereof which can suppress temperature variation on the holding surface for holding an object and prevent cracks from occurring in a holding member.SOLUTION: A holding device includes a holding member 10 having a holding surface 11 and formed of a ceramic sintered body containing aluminum nitride as a main component, a metal heating resistor 15 arranged inside the holding member 10, a conductive power receiving electrode 42 in contact with the heating resistor 15, and a conductive terminal member 40 electrically connected to the power receiving electrode 42, and in the heating device 1 that holds an object on the holding surface 11 of the holding member 10, in the surface of the power receiving electrode 42, at least a part of the connecting surface with the terminal member 40 is covered with a first coat layer 61 formed of a nitride containing at least one of Ti, Zr, V, Ta, and Nb.SELECTED DRAWING: Figure 3

Description

The present disclosure relates to a holding device for holding an object and a method for manufacturing the same.

As an example of the holding device, a heating device (also referred to as "susceptor") that heats an object (for example, a semiconductor wafer) to a predetermined temperature (for example, about 40 to 800 ° C.) while holding the object (for example, a semiconductor wafer) is known. Such a heating device is used as a part of a semiconductor manufacturing device such as a film forming apparatus (CVD film forming apparatus, sputtering film forming apparatus, etc.) or an etching apparatus (plasma etching apparatus, etc.), for example.

Generally, this type of holding device includes a holding member formed of a ceramic sintered body, and inside the holding member, a metal heating resistor such as tungsten (W) or molybdenum (Mo) is formed. Have been placed. Further, the holding device includes a conductive power supply connecting member in contact with the heat generating resistor and a conductive power supply terminal electrically connected to the power supply connecting member. When a voltage is applied to the heat generation resistor via these power supply terminals and the power supply connection member, the heat generation resistor generates heat and is held on the surface of the holding member (hereinafter, also referred to as "holding surface"). It is possible to heat things.

When such a holding device (heating device) is manufactured, a molded body of the material of the holding member in which the material of the heat generating resistor is arranged is fired at a high temperature (for example, about 1700 to 1900 ° C.). As a result, a holding member formed of a dense ceramic sintered body and a heat generating resistor arranged inside the holding member are manufactured. During this firing, the atmosphere inside the furnace and impurities (for example, carbon) derived from the raw material enter the molded body of the material of the holding member before densification and react with the heat generation resistor, thereby causing the heat generation resistor. An altered layer (for example, a tungsten carbide layer or a molybdenum carbide layer) may be formed on the surface of the surface.

When an altered layer is formed on the surface of the heat-generating resistor, the resistance value of the heat-generating resistor varies (intra-product and / or between products), and as a result, the calorific value of the heat-generating resistor varies. It may occur and the temperature of the holding surface of the holding member (and thus the temperature of the object held on the holding surface) may vary. Therefore, conventionally, there has been known a technique of suppressing the formation of an altered layer on the surface of a heat generating resistor by adjusting the relative density of the holding member and the firing conditions (see, for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2006-273586

However, in the above-mentioned prior art, attention is paid only to the altered layer formed on the surface of the heat generation resistor, and nothing is described about the altered layer formed on the surface of the power feeding connection member. Therefore, in the above-mentioned conventional technique, when the holding member is fired, impurities derived from the atmosphere in the furnace and raw materials react with the power feeding connection member to form a alteration layer on the surface of the feeding connection member. Due to the formation of the layer, the conductivity of the power supply connection member changes, and the interface resistance at the connection interface between the power supply connection member and the power supply terminal varies, so that the calorific value of the heat generation resistor varies. Therefore, it was not possible to suppress the occurrence of variations in the temperature of the holding surface of the holding member (and by extension, the temperature of the object held on the holding surface). Further, when the holding device is used, oxygen invading from the power feeding terminal side causes oxidation of the power feeding connection member, and the volume expansion due to the oxidation may cause cracks in the holding member.

Therefore, the present disclosure has been made to solve the above-mentioned problems, and is a holding device and holding that can suppress temperature variation on the holding surface for holding the object and prevent cracks from occurring in the holding member. It is an object of the present invention to provide a method of manufacturing an apparatus.

A form of the present disclosure made to solve the above problems is
A holding member having a first surface and formed of a ceramic sintered body containing aluminum nitride as a main component, a metal heat-generating resistor arranged inside the holding member, and the heat-generating resistor are in contact with each other. In a holding device comprising a conductive power feeding connection member and a conductive power feeding terminal electrically connected to the power feeding connecting member, the object is held on the first surface of the holding member.
Of the surface of the power feeding connection member, at least a part of the connecting surface with the power feeding terminal is formed on a first coat layer formed of a nitride containing at least one of Ti, Zr, V, Ta, and Nb. It is characterized by being covered.

In this holding device, due to the presence of the first coat layer that covers the surface of the power feeding connection member, the power feeding connection member reacts with impurities when the holding member is fired, and an altered layer is formed on the surface of the feeding connection member. Can be suppressed. As a result, it is possible to suppress the change in the conductivity of the power supply connecting member and the occurrence of the variation in the interface resistance at the connection interface between the power supply connection member and the power supply terminal, and as a result, the variation in the calorific value of the heat generation resistor is suppressed. Can be done. Therefore, it is possible to suppress the occurrence of variation in the temperature of the holding surface of the holding member (and by extension, the temperature of the object held on the holding surface).

Further, due to the presence of the first coat layer covering the surface of the power feeding connection member, it is possible to suppress oxidation of the power feeding connection member due to oxygen entering from the power feeding terminal side when the holding device is used. Therefore, it is possible to prevent cracks due to volume expansion due to oxidation from occurring in the holding member.

Since the first coat layer is formed of a nitride containing at least one of Ti, Zr, V, Ta, and Nb, it has heat resistance during high-temperature firing and contains aluminum nitride as a main component. It is difficult for elemental diffusion to occur in the holding member, and further, since it has conductivity, it is possible to secure an electrical connection between the power supply connecting member and the heat generating resistor. Therefore, according to this holding device, it is possible to prevent the first coat layer from obstructing the electrical connection between the power supply connection member and the heat generation resistor, and due to the element diffusion from the first coat layer. It is possible to effectively suppress the formation of an altered layer on the surface of the power feeding connection member due to the presence of the first coat layer having high heat resistance, while suppressing the occurrence of changes in the characteristics of the holding member. As a result, it is possible to suppress the change in the conductivity of the power supply connecting member and the occurrence of the variation in the interface resistance at the connection interface between the power supply connection member and the power supply terminal, and as a result, the variation in the calorific value of the heat generation resistor is suppressed. Can be done. Therefore, it is possible to suppress the occurrence of variation in the temperature of the holding surface of the holding member (and by extension, the temperature of the object held on the holding surface).

In the above-mentioned holding device
The thickness of the first coat layer is preferably 0.3 μm or more and 60 μm or less.

By doing so, the thickness of the first coat layer is not excessively thin (0.3 μm or more), so that the presence of the first coat layer forms an altered layer on the surface of the power feeding connection member. Can be suppressed more reliably. Further, since the thickness of the first coat layer is not excessively thick (60 μm or less), the stress generated in the first coat layer due to the difference in linear expansion between the power supply connection member and the first coat layer is reduced. It is possible to prevent a situation in which the first coat layer is cracked due to the stress and the formation of the altered layer cannot be suppressed.

In the above-mentioned holding device
Of the surface of the heat generating resistor, at least a part of the surface excluding the contact surface with the power feeding connecting member is formed of a nitride containing at least one of Al, Ti, Zr, V, Ta, and Nb. It is preferable that it is covered with a second coat layer.

By doing so, due to the presence of the second coat layer covering the surface of the heat generation resistor, the heat generation resistor reacts with impurities during firing of the holding member to form a alteration layer on the surface of the heat generation resistor. Can also be suppressed. Therefore, it is possible to suppress the occurrence of the variation in the calorific value of the heating resistor due to the variation in the resistance value of the heating resistor, and the temperature of the holding surface of the holding member (and thus the temperature of the object held on the holding surface). ) Can be further suppressed.

Since the second coat layer is formed of a nitride containing at least one of Al, Ti, Zr, V, Ta, and Nb, it has heat resistance during high-temperature firing and contains aluminum nitride as a main component. It is difficult to cause element diffusion to the holding member. Therefore, according to this holding device, the presence of the second coat layer having high heat resistance suppresses the occurrence of the characteristic change of the holding member due to the diffusion of elements from the second coat layer, and thus the surface of the heat generating resistor is formed. It is possible to suppress the formation of an altered layer. As a result, it is possible to suppress the occurrence of variation in the resistance value (calorific value) of the heat generating resistor, and as a result, the occurrence of variation in the temperature of the holding surface of the holding member (and by extension, the temperature of the object held on the holding surface). Can be suppressed.

Another form of the present disclosure made to solve the above problems is
A holding member having a first surface and formed of a ceramic sintered body containing aluminum nitride as a main component, a metal heat-generating resistor arranged inside the holding member, and the heat-generating resistor are in contact with each other. A method for manufacturing a holding device comprising a conductive power feeding connection member and a conductive power feeding terminal electrically connected to the power feeding connecting member, and holding an object on the first surface of the holding member. In
A step of forming a coat layer which is a nitride containing at least one of Ti, Zr, V, Ta, and Nb on at least a part of the surface of the power feeding connection member and the connection surface with the power feeding terminal. ,
It is characterized by comprising a step of producing the holding member in which the heat generating resistor and the power feeding connecting member on which the coat layer is formed are arranged by firing.

In this method of manufacturing the holding device, due to the presence of the coat layer covering the surface of the feeding connection member, the feeding connecting member reacts with impurities when the holding member is fired, and an altered layer is formed on the surface of the feeding connecting member. Can be suppressed. As a result, it is possible to suppress the change in the conductivity of the power supply connecting member and the occurrence of the variation in the interface resistance at the connection interface between the power supply connection member and the power supply terminal, and as a result, the variation in the calorific value of the heat generation resistor is suppressed. Can be done. Therefore, it is possible to suppress the occurrence of variation in the temperature of the holding surface of the holding member (and by extension, the temperature of the object held on the holding surface).

Further, when the holding device manufactured by this manufacturing method is used, it is possible to suppress the oxidation of the power feeding connection member due to oxygen entering from the power feeding terminal side. Therefore, it is possible to prevent cracks due to volume expansion due to oxidation from occurring in the holding member.

Since the coat layer is formed of a nitride containing at least one of Ti, Zr, V, Ta, and Nb, it has heat resistance during high-temperature firing and is a holding member containing aluminum nitride as a main component. It is difficult for elemental diffusion to occur in, and further, since it has conductivity, it is possible to secure an electrical connection between the power supply connection member and the power supply terminal. Therefore, according to the method of manufacturing this holding device, holding is caused by element diffusion from the coat layer while avoiding the coating layer from obstructing the electrical connection between the power feeding connection member and the feeding terminal. It is possible to effectively suppress the formation of an altered layer on the surface of the power feeding connection member due to the presence of the coat layer having high heat resistance while suppressing the occurrence of changes in the characteristics of the member. As a result, it is possible to suppress the change in the conductivity of the power supply connecting member and the occurrence of the variation in the interface resistance at the connection interface between the power supply connection member and the power supply terminal, and as a result, the variation in the calorific value of the heat generation resistor is suppressed. Can be done. Therefore, it is possible to suppress the occurrence of variation in the temperature of the holding surface of the holding member (and by extension, the temperature of the object held on the holding surface).

According to the present disclosure, it is possible to provide a holding device and a method for manufacturing the holding device, which can suppress temperature variation on the holding surface for holding an object and prevent cracks from occurring in the holding member.

It is a schematic perspective view of the heating device of an embodiment. It is a schematic block diagram of the XZ cross section of the heating apparatus of embodiment. FIG. 5 is a schematic configuration diagram of a first embodiment showing an enlarged XZ cross-sectional configuration of a heating device in the X1 portion of FIG. It is a schematic block diagram of the 2nd Example. It is a schematic block diagram of the 3rd Example. It is a schematic block diagram of the 4th Example. It is a flowchart which shows an example of the manufacturing method of the heating apparatus of an embodiment. It is a schematic block diagram of a comparative example. It is explanatory drawing which shows the evaluation performance result.

The holding device according to the embodiment of the present disclosure will be described in detail with reference to the drawings. In the present embodiment, as an example of the holding device, a heating device that heats the object to a predetermined temperature while holding the object will be illustrated and described.

<Overall configuration of heating device>
The heating device of this embodiment will be described with reference to FIGS. 1 to 3. The heating device 1 is a device that heats an object (for example, a wafer W) to a predetermined temperature (for example, about 400 to 800 ° C.) while holding the object (for example, a wafer W), and is also called a susceptor. The heating device 1 is used as a component for a semiconductor manufacturing device that constitutes a semiconductor manufacturing device such as a film forming apparatus (CVD film forming apparatus, sputtering film forming apparatus, etc.) or an etching apparatus (plasma etching apparatus, etc.). As shown in FIGS. 1 and 2, the heating device 1 has a holding member 10 and a supporting member 20. In the following description, for convenience of explanation, the XYZ axes are defined as shown in FIG. Here, the Z-axis is the axial direction of the heating device 1 (vertical direction in FIG. 1), and the X-axis and the Y-axis are the radial axes of the heating device 1.

The holding member 10 has one surface (hereinafter referred to as "holding surface") 11 substantially orthogonal to the Z-axis direction (vertical direction) and a surface (hereinafter referred to as "back surface") 12 on the side opposite to the holding surface 11. It is a substantially disk-shaped member provided with. The holding member 10 is formed of a ceramic sintered body containing aluminum nitride (AlN) as a main component. The diameter of the holding member 10 is, for example, about 100 to 500 mm, and the thickness of the holding member 10 (dimensions in the Z-axis direction) is, for example, about 3 to 30 mm. The main component referred to here means a component having the highest content ratio (for example, a component having a volume content of 90 vol% or more). Further, the holding surface 11 is an example of the "first surface" of the present disclosure.

As shown in FIGS. 1 and 2, the back surface 12 of the holding member 10 is formed with a pair of recesses 13 corresponding to a pair of terminal members 40 and a pair of power receiving electrodes 42, which will be described later. The shape of the cross section (XY cross section) of each recess 13 orthogonal to the Z-axis direction is, for example, substantially circular.

As shown in FIG. 2, a heat generating resistor 15 as a heater for heating the holding member 10 is arranged inside the holding member 10. The heat generating resistor 15 forms, for example, a pattern extending substantially spirally in the Z-axis direction, and is made of a metal such as tungsten (W) or molybdenum (Mo). In the Z-axis direction, the overall diameter of the heat generating resistor 15 is, for example, about 70 to 450 mm, the line width of the heating resistor 15 is, for example, about 0.1 to 10 mm, and the thickness of the heating resistor 15 (Z). Axial dimensions) are, for example, about 0.1 to 3 mm.

Further, a pair of power receiving electrodes 42 are arranged on the holding member 10. Each power receiving electrode 42 is, for example, a plate-shaped member that is substantially circular in the Z-axis direction, and is formed of a conductive material such as tungsten or molybdenum. The thickness of the power receiving electrode 42 is, for example, about 0.1 to 5 mm. The power receiving electrode 42 is an example of the “power supply connecting member” of the present disclosure.

One of the pair of power receiving electrodes 42 is exposed on the bottom surface of one of the pair of recesses 13 formed on the back surface 12 of the holding member 10, and the upper surface thereof is near one end of the heat generating resistor 15. It is electrically connected to the heat generating resistor 15 by being in contact with the lower surface. Further, the other of the pair of power receiving electrodes 42 is exposed on the bottom surface of the other of the pair of recesses 13 formed on the back surface 12 of the holding member 10, and the upper surface thereof is the other than the heat generating resistor 15. It is electrically connected to the heat generating resistor 15 by being in contact with the lower surface near the end.

As shown in FIGS. 1 and 2, the support member 20 is a substantially annular member extending in the Z-axis direction. The support member 20 is formed of, for example, _{a ceramic sintered body containing aluminum nitride or alumina (Al 2} O ₃ ) as a main component. The height (dimension in the Z-axis direction) of the support member 20 is, for example, about 100 to 300 mm.

As shown in FIG. 2, the support member 20 is formed with a through hole 23 extending in the Z-axis direction from the upper surface 21 to the lower surface 22 of the support member 20. The shape of the cross section (XY cross section) of the through hole 23 orthogonal to the Z-axis direction is, for example, substantially circular. The inner diameter of the through hole 23 is, for example, about 10 to 70 mm.

A pair of terminal members 40 are housed in the through hole 23. Each terminal member 40 is, for example, a substantially columnar member, and is made of a conductive material such as nickel or titanium. The diameter of the terminal member 40 is, for example, about 3 to 8 mm. The terminal member 40 is an example of the "power feeding terminal" of the present disclosure.

The upper end portion of one of the pair of terminal members 40 is housed in one of the pair of recesses 13 formed on the back surface 12 of the holding member 10, and the power receiving electrode 42 exposed on the bottom surface of the recess 13 , Are joined by a brazed portion 44 (see FIG. 3). Further, the upper end portion of the other of the pair of terminal members 40 is housed in the other of the other pair of recesses 13 formed on the back surface 12 of the holding member 10, and the power receiving is exposed on the bottom surface of the recess 13. It is joined to the electrode 42 by a brazed portion 44. Each brazed portion 44 is formed by using a metal brazing material such as a Ni alloy (Ni—Cr based alloy or the like), an Au alloy (Au—Ni based alloy or the like), or a pure Au. Each terminal member 40 is electrically connected to the power receiving electrode 42 via a brazed portion 44.

The holding member 10 and the support member 20 are such that the back surface 12 of the holding member 10 and the upper surface 21 of the support member 20 face each other in the Z-axis direction, and the holding member 10 and the support member 20 are substantially mutually exclusive. It is arranged so as to be coaxial. The holding member 10 and the supporting member 20 are joined via a joining portion 30 formed of a known joining material.

In such a heating device 1, when a voltage is applied to the heat generating resistor 15 from a power source (not shown) via each terminal member 40 and each power receiving electrode 42, the heat generating resistor 15 generates heat, whereby the holding member The object (for example, the semiconductor wafer W) held on the holding surface 11 of 10 is heated to a predetermined temperature (for example, about 400 to 800 ° C.). In the heating device 1 of the present embodiment, the stress caused by the difference in thermal expansion between the terminal member 40 and the heat generating resistor 15 can be relaxed.

<Structure around power receiving electrode and heat generating resistor>
Next, the detailed configuration around the power receiving electrode 42 and the terminal member 40 will be described with reference to FIGS. 3 to 6. In the heating device 1 of the present embodiment, at least a part of the contact surface with the terminal member 40 on the surface of the power receiving electrode 42 is covered with the first coat layer 61. Specifically, of the surface of the power receiving electrode 42, most of the contact surface with the terminal member 40 (for example, 80% or more) is covered with the first coat layer 61. The first coat layer 61 is formed of a nitride containing at least one of Ti, Zr, V, Ta, and Nb, and has conductivity. That is, the first coat layer 61 is formed of, for example, ZrN, TiN, VN, (Al, Ti) N, (Al, Ti, Si) N, TaN, NbN and the like. Since the first coat layer 61 has conductivity in this way, even if the first coat layer 61 covers all or part of the contact surface with the terminal member 40 on the surface of the power receiving electrode 42, the power receiving electrode 42 It does not affect the continuity between the terminal member 40 and the terminal member 40.

The thickness t1 of the first coat layer 61 is preferably 0.3 to 60 μm, more preferably 1.0 to 50 μm. The porosity of the first coat layer 61 is preferably 30% or less, and more preferably 10% or less. The contact surface of the surface of the power receiving electrode 42 with the terminal member 40 is a terminal on the surface of the power receiving electrode 42, either directly or via another object (for example, a brazed portion 44). It means the surface facing the member 40.

In addition, "at least a part of the contact surface with the terminal member 40 on the surface of the power receiving electrode 42 is covered with the first coat layer 61" means that the surface of the power receiving electrode 42 is covered with the terminal member 40. When paying attention to the contact surface, it means that all or part of the contact surface is covered with the first coat layer 61, and all or one of the surfaces of the power receiving electrode 42 excluding the contact surface of the terminal member 40. It does not exclude the form in which the portion is covered with the first coat layer 61.

Further, since the B, C, and O elements may react with the power receiving electrode 42 formed by Mo and W, it is preferable that the first coat layer 61 does not contain the B, C, and O elements.

<Structure (shape) of the first coat layer>
(First Example)
Here, as examples in which the structure (coating pattern) of the first coat layer 61 is different, the first to fourth embodiments will be described in order. First, the first embodiment will be described with reference to FIG. In the first embodiment, as shown in FIG. 3, a portion of the surface of the power receiving electrode 42 that is exposed to the contact surface with the terminal member 40 and the recess 13 is covered with the first coat layer 61.

(Second Example)
Next, the second embodiment will be described with reference to FIG. In the second embodiment, as shown in FIG. 4, the lower surface of the surface of the power receiving electrode 42 is covered with the first coat layer 61. That is, in the second embodiment, the area covered by the first coat layer 61 is larger than that in the first embodiment.

(Third Example)
Next, the third embodiment will be described with reference to FIG. In the third embodiment, as shown in FIG. 5, the lower surface and the side surface of the power receiving electrode 42 are covered with the first coat layer 61. That is, in the third embodiment, the side surface of the power receiving electrode 42 is also covered with the first coat layer 61, and the area covered by the first coat layer 61 is further larger than that of the second embodiment. As a result, the portion of the surface of the power receiving electrode 42 that comes into contact with the holding member 10 in addition to the portion exposed to the contact surface with the terminal member 40 and the recess 13 is covered with the first coat layer 61.

(Fourth Example)
Finally, the fourth embodiment will be described with reference to FIG. In the fourth embodiment, as shown in FIG. 6, the entire surface of the power receiving electrode 42 is covered with the first coat layer 61. That is, in the fourth embodiment, the area covered by the first coat layer 61 is the largest among the illustrated examples. Then, in the fourth embodiment, the heat generation resistor 15 is covered with the second coat layer 62. That is, at least a part of the surface of the heat generating resistor 15 excluding the contact surface with the power receiving electrode 42 is covered with the second coat layer 62. Specifically, most of the surface (for example, 80% or more) of the surface of the heat generating resistor 15 excluding the contact surface with the power receiving electrode 42 is covered with the second coat layer 62. The second coat layer 62 is formed of a nitride containing at least one of Al, Ti, Zr, V, Ta, and Nb, and has conductivity. That is, the second coat layer 62 is, for example, AlN, TiN, ZrN, (Al, Ti) N, (Al, Ti, Si) N, (Al, Ti, Cr) N, (Al, Cr) N, VN. , TaN, NbN and the like.

The thickness of the second coat layer 62 is preferably 0.3 to 60 μm. The porosity of the second coat layer 62 is preferably 30% or less, and more preferably 10% or less. The contact surface of the heat generating resistor 15 with the power receiving electrode 42 is the surface of the heat generating resistor 15 directly or via another object (for example, the second coat layer 62). It means the surface facing the power receiving electrode 42.

It should be noted that "at least a part of the surface of the heat generating resistor 15 excluding the contact surface with the power receiving electrode 42 is covered with the second coat layer 62" in the surface of the heat generating resistor 15. When focusing on the surface other than the contact surface with the power receiving electrode 42, it means that all or part of the surface is covered with the second coat layer 62, and the power receiving electrode 42 on the surface of the heat generating resistor 15 It does not exclude the form in which all or part of the contact surface of the second coat layer 62 is covered with the second coat layer 62. When the second coat layer 62 is conductive (for example, when the second coat layer 62 is formed of a nitride containing at least one of Ti, Zr, V, Ta, and Nb), Even if the second coat layer 62 covers all or part of the contact surface of the heat generating resistor 15 with the power receiving electrode 42, the conduction between the heat generating resistor 15 and the power receiving electrode 42 is not affected. When the second coat layer 62 is not conductive (for example, when the second coat layer 62 is formed of AlN), in order to ensure continuity between the heat generating resistor 15 and the power receiving electrode 42, the first It is preferable that the two-coat layer 62 does not cover at least a part of the surface of the heat generating resistor 15 that is in contact with the power receiving electrode 42.

Further, since the B, C, and O elements may react with the heat generating resistor 15 formed by Mo and W, it is preferable that the second coat layer 62 does not contain the B, C, and O elements.

<Manufacturing method of heating device>
Subsequently, the manufacturing method of the heating device 1 of the present embodiment will be described with reference to FIG. 7. First, for example, a power receiving electrode 42 made of a plate-shaped conductive material (for example, tungsten or molybdenum) is prepared, and at least a part of the surface of the power receiving electrode 42 connected to the terminal member 40 is Ti and Zr. A conductive first coat layer 61, which is a nitride containing at least one of V, Ta, and Nb, is formed (step S10). The first coat layer 61 is formed by, for example, masking the non-formed region of the first coat layer 61 on the surface of the power receiving electrode 42 and performing thermal spraying, sputtering, CVD, PVD, or the like.

Here, in the case of manufacturing the above-mentioned fourth embodiment, the surface of the heat generating resistor 15 made of a metal (for example, tungsten or molybdenum) mesh or foil, excluding the contact surface with the power receiving electrode 42. A nitride containing at least one of Al, Ti, Zr, V, Ta, and Nb in at least a part (in the fourth embodiment, most of the surface excluding the contact surface with the power receiving electrode 42). The two-coat layer 62 may be formed. The second coat layer 62 may be formed by, for example, masking the non-formed region of the second coat layer 62 on the surface of the heat generating resistor 15 and performing thermal spraying, sputtering, CVD, PVD, or the like.

Next, the holding member 10 is manufactured as follows, for example (step S11). That is, a mixed raw material powder obtained by adding an appropriate amount (for example, 5 parts by weight) of yttrium oxide powder to aluminum nitride powder (for example, 95 parts by weight) is filled in a mold and uniaxially pressed. The first layer of the molded body is formed. On the first layer, both the heat generation resistor 15 (in the case of the fourth embodiment, the second coat layer 62 is formed) and the power receiving electrode 42 on which the first coat layer 61 is formed are formed. Place in contact with each other. Next, the mixed raw material powder is filled on the heat generating resistor 15 and the power receiving electrode 42 by a predetermined thickness to form a second layer of the molded product. When forming this second layer, a through hole to be a recess 13 is formed using a mold. The molded product thus produced is pot-press-baked under predetermined conditions (for example, temperature: about 1700 to 1900 ° C., pressure: about 1 to 20 MPa, time: about 1 to 5 hours) to inside the molded product. A holding member 10 in which the heat generating resistor 15 and the power receiving electrode 42 are arranged is manufactured.

Further, the support member 20 is manufactured as follows, for example (step S12). That is, a mixture of aluminum nitride powder (for example, 100 parts by weight), if necessary, an appropriate amount (for example, 1 part by weight) of yttrium oxide powder, PVA binder (for example, 3 parts by weight), a dispersant, and a plasticizer. An organic solvent such as methanol is added to the mixture, and the mixture is mixed with a ball mill to obtain a slurry, and the slurry is granulated with a spray dryer to prepare a raw material powder. This raw material powder is cold hydrostatically pressed at a predetermined pressure (for example, about 100 to 250 MPa) to obtain a molded product. The through hole 23 in the support member 20 may be formed by using a rubber mold at the time of molding, or may be formed by performing a machining process after molding or firing. The obtained molded body is degreased in air at, for example, 600 ° C., and the degreased body is suspended in a furnace in a nitride gas atmosphere under predetermined conditions (for example, temperature: about 1800 to 1900 ° C., time: 4 to 6). The support member 20 is manufactured by firing in (about time).

Then, the holding member 10 and the support member 20 are joined (step S13). That is, after lapping the back surface 12 of the holding member 10 and the upper surface 21 of the support member 20 as necessary, at least one of the back surface 12 of the holding member 10 and the upper surface 21 of the support member 20, for example, alkaline soil. A paste of a known bonding agent such as a kind, rare earth element, or aluminum composite oxide mixed with an organic solvent or the like is uniformly applied, and then a degreasing treatment is performed. Next, the back surface 12 of the holding member 10 and the upper surface 21 of the support member 20 are superposed, and under predetermined conditions (for example, temperature: 1400 to 1850 ° C.) in a vacuum or in an inert gas such as nitrogen gas or argon gas under reduced pressure. By hot-press firing at a pressure (about 0.5 to 10 MPa), a joint portion 30 for joining the holding member 10 and the supporting member 20 is formed.

Finally, the terminal member 40 is inserted into the through hole 23 of the support member 20, and the upper end portion of the terminal member 40 is brazed to the power receiving electrode 42 to form the brazed portion 44 (step S14). In this way, the heating device 1 is manufactured.

<Effect of this embodiment>
As described above, the heating device 1 of the present embodiment has a holding surface 11, and is arranged inside the holding member 10 and the holding member 10 formed of a ceramics sintered body containing aluminum nitride as a main component. A metal heating resistor 15, a conductive power receiving electrode 42 in contact with the heating resistor 15, and a conductive terminal member 40 electrically connected to the power receiving electrode 42 are provided, and the holding member 10 is held. It is a holding device that holds an object such as a semiconductor wafer W on the surface 11. In this heating device 1, at least a part of the surface of the power receiving electrode 42, which is connected to the terminal member 40, is formed of a nitride containing at least one of Ti, Zr, V, Ta, and Nb. It is covered with the first coat layer 61.

Here, in the production of the heating device 1 of the present embodiment, the molded body of the material of the holding member 10 in which the materials of the heat generating resistor 15 and the power receiving electrode 42 are arranged is heated to a high temperature (for example, 1700 to 1900 ° C.). By firing in (degree), a holding member 10 formed of a dense ceramic fired body, a heat generating resistor 15 arranged inside the holding member 10, and a power receiving electrode 42 are produced. During this firing, impurities (for example, carbon) derived from the atmosphere in the furnace and raw materials enter the molded body of the material of the holding member 10 before being densified and react with the power receiving electrode 42, thereby causing the power receiving electrode 42. An altered layer (for example, a tungsten carbide layer or a molybdenum carbide layer) may be formed on the surface of 42. Further, when the holding member 10 is fired, impurities derived from the atmosphere in the furnace and raw materials react with the power receiving electrode 42 to form an altered layer on the surface of the power receiving electrode 42, and the supporting member 20 thereafter. An altered layer may be formed at the time of joining.

When such an altered layer is formed on the surface of the power receiving electrode 42, the conductivity of the power receiving electrode 42 changes, and the interface resistance at the connection interface between the power receiving electrode 42 and the terminal member 40 varies. Therefore, the calorific value of the heat generating resistor 15 may vary, and the temperature of the holding surface 11 of the holding member 10 (and thus the temperature of the object such as the semiconductor wafer W held on the holding surface 11) may vary. There is. Further, when the heating device 1 is used, the power receiving electrode 42 is oxidized by oxygen entering from the terminal member 40 side, and the holding member 10 may be cracked due to the volume expansion due to the oxidation.

However, in the heating device 1 of the present embodiment, due to the presence of the first coat layer 61 that covers the surface of the power receiving electrode 42, the power receiving electrode 42 reacts with impurities during firing of the holding member 10 and the surface of the power receiving electrode 42. It is possible to suppress the formation of an altered layer. Further, due to the presence of the first coat layer 61 that covers the surface of the power receiving electrode 42, the formation of the altered layer can be suppressed even when the support member 20 is joined. As a result, it is possible to suppress the change in the conductivity of the power receiving electrode 42 and the occurrence of the variation in the interface resistance at the connection interface between the power receiving electrode 42 and the terminal member 40, and as a result, the variation in the calorific value of the heat generating resistor 15 is suppressed. can do. The first coat layer 61 formed on the surface of the power receiving electrode 42 is formed of a nitride containing at least one of Ti, Zr, V, Ta, and Nb, and thus has heat resistance during high-temperature firing. In addition to having, it is difficult to cause element diffusion to the holding member 10 containing aluminum nitride as a main component, and further, since it has conductivity, it is possible to secure an electrical connection between the power receiving electrode 42 and the heat generating resistor 15. It is a thing.

Therefore, according to the heating device 1 of the present embodiment, it is possible to prevent the first coat layer 61 from obstructing the electrical connection between the power receiving electrode 42 and the heat generating resistor 15, and the first coat layer. It is effective that the altered layer is formed on the surface of the power receiving electrode 42 due to the presence of the first coat layer 61 having high heat resistance while suppressing the occurrence of the characteristic change of the holding member 10 due to the element diffusion from 61. Can be suppressed. As a result, it is possible to suppress the change in the conductivity of the power receiving electrode 42 and the occurrence of the variation in the interface resistance at the connection interface between the power receiving electrode 42 and the terminal member 40, and as a result, the variation in the calorific value of the heat generating resistor 15 is suppressed. can do.

Further, due to the presence of the first coat layer 61 that covers the surface of the power receiving electrode 42, it is possible to suppress the oxidation of the power receiving electrode 42 due to oxygen entering from the terminal member 40 side when the heating device 1 is used. Therefore, it is possible to prevent cracks due to volume expansion due to oxidation from occurring in the holding member 10.

The thickness t1 of the first coat layer 61 is preferably 0.3 μm or more and 60 μm or less. By doing so, the thickness of the first coat layer 61 is not excessively thin (0.3 μm or more), so that the presence of the first coat layer 61 forms an altered layer on the surface of the power receiving electrode 42. This can be suppressed more reliably. Further, since the thickness of the first coat layer 61 is not excessively thick (60 μm or less), it occurs in the first coat layer 61 due to the linear expansion difference between the power receiving electrode 42 and the first coat layer 61. The stress can be reduced, and it is possible to prevent a situation in which the first coat layer 61 is cracked due to the stress and the formation of the altered layer cannot be suppressed.

Further, in the heating device 1 of the present embodiment, at least a part of the surface of the heat generating resistor 15 excluding the contact surface with the power receiving electrode 42 is at least Al, Ti, Zr, V, Ta, and Nb. It may be covered with a second coat layer 62 formed of a nitride containing one.

By doing so, due to the presence of the second coat layer 62 that covers the surface of the heat generation resistor 15, the heat generation resistor 15 reacts with impurities during firing of the holding member 10 and is altered on the surface of the heat generation resistor 15. Can also be suppressed from being formed. Therefore, it is possible to suppress the occurrence of the variation in the heat generation amount of the heat generation resistor 15 due to the variation in the resistance value of the heat generation resistor 15, and the temperature of the holding surface 11 of the holding member 10 (and thus, being held by the holding surface 11). It is possible to further suppress the occurrence of variations in the temperature of the object.

Since the second coat layer 62 is formed of a nitride containing at least one of Al, Ti, Zr, V, Ta, and Nb, it has heat resistance during high-temperature firing and is mainly composed of aluminum nitride. It is difficult to cause element diffusion to the holding member 10 as a component. Therefore, according to such a heating device 1, the presence of the second coat layer 62, which has high heat resistance, suppresses the occurrence of the characteristic change of the holding member 10 due to the diffusion of elements from the second coat layer 62. It is possible to suppress the formation of an altered layer on the surface of the heat generation resistor 15. As a result, it is possible to suppress the occurrence of variations in the resistance value (heat generation amount) of the heat generation resistor 15.

<Performance evaluation of heating device>
Subsequently, since the performance evaluation was performed on the first to fourth examples in the heating device 1 of the present embodiment, the evaluation method and the evaluation result will be described with reference to FIG.

(Analysis method of heating device)
First, a method for specifying the thickness t1 of the first coat layer 61 will be described. The thickness t1 of the first coat layer 61 formed on the surface of the power receiving electrode 42 is specified as follows.

After mirror polishing the cross section (cross section parallel to the Z-axis direction) of the power receiving electrode 42 including the contact portion with the terminal member 40, a cross section polisher treatment is performed in which the cross section of the sample is treated with an ion beam such as argon ion. Next, 10 visual fields are imaged and observed using an electron probe microanalyzer (EPMA) on the machined surface. The field of view of element mapping is 100 μm × 100 μm. Next, using image analysis software (Anysis Five manufactured by Soft Imaging System GmbH), the interface position between the power receiving electrode 42 and the first coat layer 61 is set (in some cases, the first coat layer 61 and the heat generating resistor 15). Also check the interface position of) and draw a line. In each field image, the shortest distance between the lines drawn at the interface is specified as the thickness t1 of the first coat layer 61. Then, the average value of the thickness t1 of the first coat layer 61 specified in the ten visual field images is taken as the final thickness t1 of the first coat layer 61.

Next, a method for specifying the presence or absence of the coat layer formed by AlN will be described. When the second coat layer 62 is formed of AlN (that is, the second coat layer 62 is formed of the same material as the holding member 10), the heat generating resistor 15 is covered with the second coat layer 62 of AlN. What is being said is specified as follows.

After the cross section including the heat generation resistor 15 (cross section parallel to the Z-axis direction) is mirror-polished, a cross-section polisher treatment is performed in which the cross section of the sample is treated with an ion beam such as argon ion. Next, a designated field of view is imaged and observed on the machined surface using a scanning electron microscope (SEM).

It should be noted that imaging shall be performed for each of the following two types in five fields of view.
(1) The field of view is 100 μm × 100 μm and includes the interface between the heat generating resistor 15 and the holding member 10. (2) The field of view is 1 m × 1 m and includes the interface between the heat generating resistor 15 and the holding member 10.

Then, when the following two conditions are satisfied, it is determined that the heat generating resistor 15 is covered with the second coat layer 62 of AlN.
-Requirement 1: When observing the pore diameter and the number of pores at the interface between the heat generating resistor 15 and the holding member 10 in (1) above, in 10 field images, pores of 0.5 μm or more and 3 μm or less are average. There are two or more, and there is no element diffusion of components that are not contained in the holding member 10 and the heat generating resistor 15.
Requirement 2: When observing the distribution of the grain boundary phase components in (2) above, at least 5 out of 10 visual field images are near the interface between the heat generating resistor 15 and the holding member 10 (within a distance of 100 μm from the interface). There is no region where the grain boundary phase component is small.

Normally, metal surface oxides such as W and Mo and oxides on the surface of AlN particles form a liquid phase at a low temperature and become densified, so that pores are unlikely to occur at the interface. Further, as the sintering progresses, the grain boundary phase component of AlN is discharged toward the unsintered portion, so that a difference in the concentration of the grain boundary phase component occurs. On the other hand, when the second coat layer 62 formed of AlN is present on the surface, the reaction between the metal surface oxide and the oxide on the surface of the AlN particles of the holding member 10 does not cause the formation of a liquid phase at a low temperature. Interfacial pores tend to remain. Further, since the difference in sintering behavior is unlikely to occur in the vicinity of the interface and in other places, the difference in the concentration of the grain boundary phase component is also unlikely to occur. Therefore, if the above two requirements are satisfied, it can be determined that the power receiving electrode 42 is covered with the second coat layer 62 of AlN.

(Evaluation method)
Next, the performance evaluation method will be described. This time, 11 samples (SA1 to SA11) described later were prepared, and the temperature variation of the holding surface 11 was measured for each sample. Specifically, a blackened dummy wafer is placed on the holding surface 11 of the holding member 10, and power is supplied to the heat generating resistor 15 via the terminal member 40 to raise the temperature of the heating device of each sample. The surface temperature of the dummy wafer was measured. Then, the power supplied via the terminal member 40 is maintained at the same value for 15 minutes from the time when the surface temperature of the dummy wafer reaches 500 ° C., and then the maximum temperature difference in the dummy wafer is used as the temperature variation of the holding surface 11. It was measured.

In addition, each sample was subjected to a heat resistance test. Specifically, each sample was heated to 600 ° C., and at each timing of the elapse of 50 hours and the elapse of 100 hours, the presence or absence of cracks in the holding member 10 and the presence or absence of detachment of the terminal member 40 were confirmed.

Here, each sample produced a production method according to the production method of the heating device 1 of the above embodiment. Each sample includes the material of the power receiving electrode 42, the structure (coating pattern) of the first coating layer 61 on the surface of the power receiving electrode 42, the material and thickness t1, the presence / absence of the second coating layer 62 on the surface of the heat generating resistor 15, and the material. However, they are different from each other.

Specifically, in the samples SA1 to SA8, SA10, and SA11 (the first to fourth embodiments), the first coat layer 61 is formed on the surface of the power receiving electrode 42, and the sample SA9 (the above-mentioned first to fourth embodiments) is formed. In Comparative Example), as shown in FIG. 8, the first coat layer 61 was not formed on the surface of the power receiving electrode 42. As shown in FIG. 9, in the samples SA1 to SA8, SA10, and SA11, a nitride containing at least one of Ti, Zr, V, Ta, and Nb was used as the first coat layer 61. Further, in the samples SA6 to SA8, the second coat layer 62 was formed on the surface of the heat generation resistor 15 in the same manner as in the fourth embodiment. In the samples SA6 and SA7, AlN was used as the second coat layer 62, and in the sample SA8, TiN was used as the second coat layer 62, and the thickness of the second coat layer 62 was set to 3 μm.

(Evaluation results)
Next, the result of the performance evaluation will be described. First, the effect of the first coat layer 61 will be considered. In the sample SA9 (comparative example) in which the first coat layer 61 was not formed on the power receiving electrode 42, the temperature variation (temperature difference) of the holding surface 11 was relatively large at 10 ° C. or higher, as shown in FIG. 9 (comparative example). Notated as "x" in FIG. 9). In this sample SA9, since the first coat layer 61 does not exist on the surface of the power receiving electrode 42, the material of the holding member 10 before the atmosphere in the furnace and the impurities derived from the raw materials are densified during the firing of the holding member 10. Invades into the molded body of the above and reacts with the power receiving electrode 42. Therefore, a relatively large number of alteration layers are formed on the surface of the power receiving electrode 42, the conductivity of the power receiving electrode 42 changes, and the interface resistance at the connection interface between the power receiving electrode 42 and the terminal member 40 varies. As a result, it is considered that the heat generation amount of the heat generating resistor 15 varies due to the temperature variation of the holding surface 11, and the temperature variation of the holding surface 11 occurs.

Further, in the sample SA9, the occurrence of cracks was confirmed in the holding member 10 in the heat resistance test at 600 ° C. for 50 hours. In this sample SA9, it is considered that the power receiving electrode 42 is oxidized by oxygen entering from the terminal member 40 side, and the holding member 10 is cracked due to the volume expansion due to the oxidation.

On the other hand, in the samples SA1 to SA8, SA10, and SA11 in which the first coat layer 61 is formed on at least the contact surface with the terminal member 40 and the portion exposed to the recess 13 on the surface of the power receiving electrode 42, the holding surface 11 The temperature variation (temperature difference) of was 9 ° C. or less, which was a relatively small value (indicated as "○" or "◎" in FIG. 9). In these samples, due to the presence of the first coat layer 61 that covers the surface of the power receiving electrode 42, the power receiving electrode 42 reacts with impurities during firing of the holding member 10 to form an altered layer on the surface of the power receiving electrode 42. The change in the conductivity of the power receiving electrode 42 and the variation in the calorific value of the heat generating resistor 15 due to the variation in the interface resistance at the connection interface between the power receiving electrode 42 and the terminal member 40 were suppressed. It is considered to be.

Further, in these samples SA1 to SA8, SA10, and SA11, no crack was confirmed in the holding member 10 in the heat resistance test at 600 ° C. for 50 hours. In these samples, the presence of the first coat layer 61 covering the surface of the power receiving electrode 42 suppresses the oxidation of the power receiving electrode 42 by oxygen entering from the terminal member 40 side, and the holding member 10 due to the volume expansion due to the oxidation. It is considered that the occurrence of cracks was suppressed.

Based on this performance evaluation result, at least a part of the surface of the power receiving electrode 42 connected to the terminal member 40 was formed of a nitride containing at least one of Ti, Zr, V, Ta, and Nb. It can be seen that when the first coat layer 61 is covered, the formation of the altered layer on the surface of the power receiving electrode 42 is suppressed. As a result, it is possible to suppress the change in the conductivity of the power receiving electrode 42 and the occurrence of the variation in the interface resistance at the connection interface between the power receiving electrode 42 and the terminal member 40, and suppress the variation in the calorific value of the heat generating resistor 15. It was confirmed that it can be done. Then, in order to suppress the occurrence of variation in the heat generation amount of the heat generation resistor 15 and to prevent cracks from occurring in the holding member 10 when the heating device 1 is used, at least the terminal member on the surface of the power receiving electrode 42. It was confirmed that it is preferable to form the first coat layer 61 on the contact surface with 40 and the portion exposed to the recess 13.

Next, the structure (coating pattern) of the first coat layer 61 will be considered. Of the samples SA1 to SA8, SA10, and SA11 in which the first coat layer 61 is formed on the surface of the power receiving electrode 42, the samples SA4 (third example) and the samples SA6 to correspond to the third and fourth examples. In SA8 (4th Example), the temperature variation (temperature difference) of the holding surface 11 was an extremely small value of 5 ° C. or less (denoted as “⊚” in FIG. 9). In these samples SA4, SA6 to SA8, in the surface of the power receiving electrode 42, in addition to the portion exposed to the contact surface with the terminal member 40 and the recess 13, the portion contacting the holding member 10 (bottom surface and side surface of the power receiving electrode 42). ) Is covered with the first coat layer 61. Therefore, when the holding member 10 is fired, it is possible to prevent the atmosphere in the furnace and impurities derived from the raw materials from reacting with the power receiving electrode 42 to form an altered layer on the surface of the power receiving electrode 42. As a result, the change in the conductivity of the power receiving electrode 42 and the variation in the calorific value of the heat generating resistor 15 due to the variation in the interface resistance at the connection interface between the power receiving electrode 42 and the terminal member 40 are suppressed. Conceivable.

Based on this performance evaluation result, in order to reduce the temperature variation (temperature difference) of the holding surface 11, the contact surface with the terminal member 40 on the surface of the power receiving electrode 42 as in the sample SA4 (third embodiment). It was confirmed that it is preferable that the portion in contact with the holding member 10, that is, the bottom surface and the side surface of the power receiving electrode 42 is covered with the first coat layer 61 in addition to the portion exposed to the recess 13.

Further, in the samples SA6 to SA8 (4th Example), due to the presence of the second coat layer 62 covering the surface of the heat generation resistor 15, the heat generation resistor 15 reacts with impurities when the holding member 10 is fired. It is also possible to suppress the formation of an altered layer on the surface of the heat generation resistor 15. As a result, it is considered that the occurrence of the variation in the calorific value of the exothermic resistor 15 due to the variation in the resistance value of the exothermic resistor 15 is suppressed. Therefore, of the surface of the heat generating resistor 15, at least a part of the surface excluding the contact surface with the power receiving electrode 42 is formed of a nitride containing at least one of Al, Ti, Zr, V, Ta, and Nb. It was also confirmed that it is preferable to be covered with the second coat layer 62.

Finally, the thickness of the first coat layer 61 will be considered. Of the samples SA1 to SA8, SA10, and SA11 in which the first coat layer 61 is formed on the surface of the power receiving electrode 42, the sample SA10 and the first coat layer in which the thickness t1 of the first coat layer 61 is less than 0.3 μm. In the sample SA11 having a thickness t1 of 61 exceeding 60 μm, as described above, the terminal member 40 did not come off in the heat resistance test at 600 ° C. for 50 hours. However, in the heat resistance test at 600 ° C. for 100 hours, which is a stricter condition, the terminal member 40 came off.

On the other hand, in the samples SA1 to SA8 in which the thickness t1 of the first coat layer 61 was 0.3 μm or more and 60 μm or less, the terminal member 40 did not come off even in the heat resistance test at 600 ° C. for 100 hours. In these samples SA1 to SA8, the thickness of the first coat layer 61 is not excessively thin (0.3 μm or more), so that the presence of the first coat layer 61 forms an altered layer on the surface of the power receiving electrode 42. It can be more reliably suppressed. Further, since the thickness of the first coat layer 61 is not excessively thick (60 μm or less), it occurs in the first coat layer 61 due to the linear expansion difference between the power receiving electrode 42 and the first coat layer 61. It is considered that the stress could be reduced and the situation where the first coat layer 61 was cracked due to the stress and the formation of the altered layer could not be suppressed could be prevented. From this performance evaluation result, it was confirmed that the thickness t1 of the first coat layer 61 is preferably 0.3 μm or more and 60 μm or less.

It should be noted that the above embodiment is merely an example and does not limit the present disclosure in any way, and it goes without saying that various improvements and modifications can be made without departing from the gist thereof. For example, in the above-described embodiment, the case where the present disclosure is applied to the heating device 1 has been illustrated, but the present disclosure is not limited to the heating device 1, and the present disclosure is not limited to the heating device 1, but the general holding device for holding an object on the holding surface of the holding member. Can be applied.

Further, in the above embodiment, the case where one heat generating resistor 15 is arranged inside the holding member 10 is illustrated, but a plurality of heat generating resistors 15 may be arranged inside the holding member 10. .. In that case, a plurality of sets of power receiving electrodes 42 and terminal members 40 and the like associated with each of the plurality of heat generating resistors 15 are provided.

Further, in the above embodiment, the power receiving electrode 42 and the terminal member 40 are joined by a brazing portion 44, but in order to alleviate the stress due to the difference in thermal expansion between the power receiving electrode 42 and the terminal member 40, the power receiving electrode A cushioning member made of a metal such as Kovar may be arranged between the 42 and the terminal member 40.

Further, in the above embodiment, when the holding member 10 is manufactured, the molded body is formed by filling the mold with the mixed raw material powder and uniaxially pressing the molded body. However, the ceramic green sheets are laminated to form the molded body. You may.

1 Heating device 10 Holding member 11 Holding surface 15 Heat generation resistor 20 Support member 40 Terminal member 42 Power receiving electrode 61 First coat layer 62 Second coat layer W Wafer

Claims (4)

A holding member having a first surface and formed of a ceramic sintered body containing aluminum nitride as a main component, a metal heat-generating resistor arranged inside the holding member, and the heat-generating resistor are in contact with each other. In a holding device comprising a conductive power feeding connection member and a conductive power feeding terminal electrically connected to the power feeding connecting member, the object is held on the first surface of the holding member.
Of the surface of the power feeding connection member, at least a part of the connecting surface with the power feeding terminal is formed on a first coat layer formed of a nitride containing at least one of Ti, Zr, V, Ta, and Nb. A holding device characterized by being covered. In the holding device according to claim 1,
A holding device having a thickness of the first coat layer of 0.3 μm or more and 60 μm or less. In the holding device according to claim 1 or 2.
Of the surface of the heat generating resistor, at least a part of the surface excluding the contact surface with the power feeding connecting member is formed of a nitride containing at least one of Al, Ti, Zr, V, Ta, and Nb. A holding device characterized by being covered with a second coat layer. A holding member having a first surface and formed of a ceramic sintered body containing aluminum nitride as a main component, a metal heat-generating resistor arranged inside the holding member, and the heat-generating resistor are in contact with each other. A method for manufacturing a holding device comprising a conductive power feeding connection member and a conductive power feeding terminal electrically connected to the power feeding connecting member, and holding an object on the first surface of the holding member. In
A step of forming a coat layer which is a nitride containing at least one of Ti, Zr, V, Ta, and Nb on at least a part of the surface of the power feeding connection member and the connection surface with the power feeding terminal. ,
A method for manufacturing a holding device, which comprises a step of producing the holding member in which the heat generating resistor and the power feeding connecting member on which the coat layer is formed are arranged by firing.

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