JP2021141188A5 - Plasma processing equipment - Google Patents
Plasma processing equipment Download PDFInfo
- Publication number
- JP2021141188A5 JP2021141188A5 JP2020037513A JP2020037513A JP2021141188A5 JP 2021141188 A5 JP2021141188 A5 JP 2021141188A5 JP 2020037513 A JP2020037513 A JP 2020037513A JP 2020037513 A JP2020037513 A JP 2020037513A JP 2021141188 A5 JP2021141188 A5 JP 2021141188A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma processing
- processing apparatus
- conductive
- semiconductor
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 15
- 239000002184 metal Substances 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 230000002093 peripheral effect Effects 0.000 claims 3
- 238000000137 annealing Methods 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 229910052735 hafnium Inorganic materials 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 238000007747 plating Methods 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 229910052720 vanadium Inorganic materials 0.000 claims 2
- 238000007740 vapor deposition Methods 0.000 claims 2
- 238000003466 welding Methods 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 1
Claims (13)
前記プラズマ処理空間内に配置され、静電チャックを有するステージと、
前記ステージ上に置かれた基板を囲むように前記ステージ上に配置された半導体リングであり、前記半導体リングは、第１の面を有する、半導体リングと、
電源と、
前記ステージ内に配置され、前記電源に電気的に接続された少なくとも１つの導電部材と、
前記半導体リングの第１の面に配置され、前記少なくとも１つの導電部材に電気的に接続された導電層と、
を備えた、プラズマ処理装置。 a chamber having a plasma processing space;
a stage disposed within the plasma processing space and having an electrostatic chuck;
a semiconductor ring disposed on the stage so as to surround a substrate placed on the stage, the semiconductor ring having a first surface;
a power supply;
at least one conductive member disposed within the stage and electrically connected to the power source;
a conductive layer disposed on the first surface of the semiconductor ring and electrically connected to the at least one conductive member;
A plasma processing apparatus comprising:
請求項１に記載のプラズマ処理装置。 the conductive layer is in ohmic contact with the semiconductor ring;
The plasma processing apparatus according to claim 1.
請求項２に記載のプラズマ処理装置。 The ohmic junction is formed by any one of sputtering, vapor deposition, plating, welding, and annealing using a conductive metal.
The plasma processing apparatus according to claim 2 .
請求項３に記載のプラズマ処理装置。 The conductive metal is any one of Al, Ni, Co, V, Ti, Zr, Hf, W, and Au.
The plasma processing apparatus according to claim 3 .
前記環状突出部は、前記第１の面としての内周面を有する、The annular protrusion has an inner peripheral surface as the first surface,
請求項１～４のうちいずれか一項に記載のプラズマ処理装置。The plasma processing apparatus according to any one of claims 1 to 4.
前記導電層は、前記環状突出部の全内周面に設けられている、The conductive layer is provided on the entire inner peripheral surface of the annular protrusion,
請求項５に記載のプラズマ処理装置。The plasma processing apparatus according to claim 5.
前記導電層は、前記環状突出部の全内周面に設けられている、The conductive layer is provided on the entire inner peripheral surface of the annular protrusion,
請求項５に記載のプラズマ処理装置。The plasma processing apparatus according to claim 5.
請求項７に記載のプラズマ処理装置。The plasma processing apparatus according to claim 7.
前記プラズマ処理空間に曝される第１の面と、前記第１の面と反対側の第２の面とを有する半導体部材と、a semiconductor member having a first surface exposed to the plasma processing space and a second surface opposite to the first surface;
前記半導体部材の前記第２の面に配置される導電層と、a conductive layer disposed on the second surface of the semiconductor member;
電源と、a power supply;
前記電源に電気的に接続され、前記導電層と接触する導電部材と、a conductive member electrically connected to the power source and in contact with the conductive layer;
を備えた、プラズマ処理装置。A plasma processing apparatus comprising:
請求項９に記載のプラズマ処理装置。The plasma processing apparatus according to claim 9.
請求項１０に記載のプラズマ処理装置。The plasma processing apparatus according to claim 10.
請求項１１に記載のプラズマ処理装置。The plasma processing apparatus according to claim 11.
前記チャンバの少なくとも一部を構成する半導体部材であり、前記半導体部材は、前記プラズマ処理空間に曝される第１の面と、前記第１の面と反対側の第２の面とを有する、半導体部材と、A semiconductor member forming at least part of the chamber, the semiconductor member having a first surface exposed to the plasma processing space and a second surface opposite to the first surface. a semiconductor member;
前記半導体部材の前記第２の面に配置される導電層と、a conductive layer disposed on the second surface of the semiconductor member;
前記導電層と接触し、接地された導電部材と、a grounded conductive member in contact with the conductive layer;
を備えた、プラズマ処理装置。A plasma processing apparatus comprising:
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020037513A JP7454961B2 (en) | 2020-03-05 | 2020-03-05 | plasma processing equipment |
| TW110105589A TW202201461A (en) | 2020-03-05 | 2021-02-19 | Plasma processing apparatus, semiconductive member, and semiconductive ring |
| CN202110200407.9A CN113363129A (en) | 2020-03-05 | 2021-02-23 | Plasma processing apparatus, semiconductor component and edge ring |
| SG10202101942W SG10202101942WA (en) | 2020-03-05 | 2021-02-25 | Plasma processing apparatus, semiconductive member, and semiconductive ring |
| KR1020210028272A KR20210113074A (en) | 2020-03-05 | 2021-03-03 | Plasma processing apparatus, semiconductive member, and edge ring |
| US17/191,085 US20210280397A1 (en) | 2020-03-05 | 2021-03-03 | Plasma processing apparatus, semiconductive member, and semiconductive ring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020037513A JP7454961B2 (en) | 2020-03-05 | 2020-03-05 | plasma processing equipment |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021141188A JP2021141188A (en) | 2021-09-16 |
| JP2021141188A5 true JP2021141188A5 (en) | 2023-01-19 |
| JP7454961B2 JP7454961B2 (en) | 2024-03-25 |
Family
ID=77524682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020037513A Active JP7454961B2 (en) | 2020-03-05 | 2020-03-05 | plasma processing equipment |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20210280397A1 (en) |
| JP (1) | JP7454961B2 (en) |
| KR (1) | KR20210113074A (en) |
| CN (1) | CN113363129A (en) |
| SG (1) | SG10202101942WA (en) |
| TW (1) | TW202201461A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023056629A (en) * | 2021-10-08 | 2023-04-20 | 東京エレクトロン株式会社 | Plasma processing device |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6363882B1 (en) | 1999-12-30 | 2002-04-02 | Lam Research Corporation | Lower electrode design for higher uniformity |
| JP3810248B2 (en) | 2000-03-27 | 2006-08-16 | 信越化学工業株式会社 | Silicon ring for plasma processing equipment |
| JP4566789B2 (en) * | 2005-03-07 | 2010-10-20 | 株式会社日立ハイテクノロジーズ | Plasma processing method and plasma processing apparatus |
| JP2008251742A (en) | 2007-03-29 | 2008-10-16 | Tokyo Electron Ltd | Substrate treating apparatus, and substrate mounting base on which focus ring is mounted |
| JP5274918B2 (en) | 2008-07-07 | 2013-08-28 | 東京エレクトロン株式会社 | Method for controlling temperature of chamber inner member of plasma processing apparatus, chamber inner member and substrate mounting table, and plasma processing apparatus including the same |
| US9412579B2 (en) * | 2012-04-26 | 2016-08-09 | Applied Materials, Inc. | Methods and apparatus for controlling substrate uniformity |
| JP6539113B2 (en) * | 2015-05-28 | 2019-07-03 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus and plasma processing method |
| JP2018006299A (en) * | 2016-07-08 | 2018-01-11 | 東芝メモリ株式会社 | Processing object susceptor for plasma processing apparatus, plasma processing apparatus and plasma processing method |
| KR102604063B1 (en) | 2016-08-18 | 2023-11-21 | 삼성전자주식회사 | Electrostatic chuck assembly and substrate treating apparatus including the assembly |
| JP7072439B2 (en) | 2017-05-12 | 2022-05-20 | 東京エレクトロン株式会社 | Cleaning method of plasma processing equipment |
| JP7033441B2 (en) | 2017-12-01 | 2022-03-10 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP7149068B2 (en) * | 2017-12-21 | 2022-10-06 | 株式会社日立ハイテク | Plasma processing apparatus and plasma processing method |
| JP7090149B2 (en) | 2018-06-22 | 2022-06-23 | 東京エレクトロン株式会社 | Plasma processing equipment and plasma etching method |
| JP7140610B2 (en) * | 2018-09-06 | 2022-09-21 | 株式会社日立ハイテク | Plasma processing equipment |
-
2020
- 2020-03-05 JP JP2020037513A patent/JP7454961B2/en active Active
-
2021
- 2021-02-19 TW TW110105589A patent/TW202201461A/en unknown
- 2021-02-23 CN CN202110200407.9A patent/CN113363129A/en active Pending
- 2021-02-25 SG SG10202101942W patent/SG10202101942WA/en unknown
- 2021-03-03 US US17/191,085 patent/US20210280397A1/en active Pending
- 2021-03-03 KR KR1020210028272A patent/KR20210113074A/en unknown
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