JP2021132125A - Plasma processing apparatus - Google Patents

Abstract

To uniformize distribution of radicals arriving at a specimen surface and to suppress the quantity of inactivated radicals as further as possible while keeping a sufficient ion shielding property in the case of isotropic etching.SOLUTION: A plasma processing apparatus comprises: a processing chamber in which plasma processing is applied to a specimen; a high frequency power source which supplies microwaves for generating plasma inside of the processing chamber; a magnetic field forming mechanism which forms a magnetic field inside of the processing chamber; and a specimen stage on which the specimen is placed. The plasma processing apparatus further comprises a shield plate which shields incidence of ion to the specimen stage and is disposed at an upper side of the specimen stage. The shield plate includes a first shield plate, and a second shield plate which is disposed in parallel while being spaced apart from the first shield plate. The first shield plate includes a plurality of first openings, and the second shield plate includes a plurality of second openings disposed at positions other than a position where a line of magnetic force passing the openings of the first shield plate crosses the second shield plate during isotropic etching.SELECTED DRAWING: Figure 1

Description

The present invention relates to a plasma processing apparatus.

In the manufacturing process of semiconductor devices, it is required to cope with miniaturization and integration of components included in semiconductor devices. For example, in integrated circuits and nanoelectromechanical systems, nanoscale structures are being further promoted.

Generally, in the manufacturing process of a semiconductor device, lithography technology is used to form a fine pattern. In this technique, a pattern of a device structure is applied on a resist layer, and a substrate exposed by the pattern of the resist layer is selectively etched and removed. In the subsequent processing step, an integrated circuit can be formed by depositing another material in the etching region.

Particularly in recent years, the demand for power saving and high speed from the market for semiconductor devices has increased, and the tendency of the device structure to become complicated and highly integrated is remarkable. For example, in logic devices, the application of GAA (Gate All Around), in which channels are composed of laminated nanowires, is being studied. In the GAA etching process, in addition to the conventional vertical processing by anisotropic etching, nanowire formation is being considered. Therefore, it is necessary to process it laterally by isotropic etching.

Here, anisotropic etching is etching using an ion assist reaction that promotes the reaction of radicals by ions, and isotropic etching is etching mainly composed of surface reactions using only radicals. Therefore, a plasma etching apparatus is required to have both a function of irradiating both ions and radicals for etching and a function of irradiating only radicals for etching.

For example, in atomic layer etching in which the etching depth is controlled with high accuracy, the etching depth is controlled by alternately repeating the first step of irradiating the sample with only radicals and the second step of irradiating the sample with ions. The method is being considered. In this etching method, a radical is adsorbed on the sample surface in the first step, and then an etching reaction is generated by irradiating a rare gas ion in the second step to activate the radical adsorbed on the sample surface. The etching depth is controlled with high accuracy.

Further, for example, in a mass production factory for high-mix low-volume production, by installing an etching apparatus having both functions of anisotropic etching for irradiating both ions and radicals and isotropic etching for irradiating only radicals, 1 Multiple steps can be performed with a single etching device, which saves space and significantly reduces equipment costs.

As described above, the plasma etching apparatus used in semiconductor device processing is required to have both a function of irradiating both ions and radicals for etching and a function of irradiating only radicals for etching. There is.

In response to such a requirement, in Patent Document 1, a shielding plate that shields the incident of ions is installed in the chamber, and plasma treatment that irradiates both ions and radicals by generating plasma below the shielding plate is performed. , Or by generating plasma above the shielding plate, a device capable of performing treatment with only radicals has been proposed.

Further, in order to perform the treatment using only radicals with higher accuracy, it is necessary to improve the shielding property of ions. In response to such a requirement, in Patent Document 2, a plurality of plate-shaped partition members are provided which are overlapped with each other at intervals between the plasma generation chamber and the processing chamber, and a plurality of through holes are formed in each of the plate-shaped members. However, by arranging the through holes so that they do not overlap with the through holes of other plate-shaped members, the ultraviolet rays and hydrogen ions generated from the plasma generated in the plasma generation chamber are shielded and only hydrogen radicals are present. A device capable of supplying the plasma to the processing chamber has been proposed.

JP-A-2018-093226 Japanese Unexamined Patent Publication No. 2009-016453

By the way, in order to improve the etching rate of a sample when both the step of irradiating both ions and radicals for etching and the step of irradiating only radicals for etching with high accuracy are performed in the same chamber. It is necessary to suppress the amount of deactivated radicals as much as possible while maintaining sufficient ion shielding properties during isotropic etching.

However, in the case of the two-sheet structure shielding plate shown in Patent Document 1, the amount of radical deactivation on the upper surface of the lower donut-shaped shielding plate is large, and in the case of the oblique hole structure shielding plate, a through hole is provided in order to enhance the ion shielding property. There is a problem that the portion needs to have a high aspect ratio and the amount of radical deactivation on the inner wall of the hole is large.

Further, the technique of Patent Document 2 has a problem that plasma cannot be generated in the lower part of the shielding plate and ion and radical irradiation cannot be switched. Further, the ion orbit may pass through the holes of both the upper shield plate and the lower shield plate, and the ion shielding property may be insufficient.

An object of the present invention is to provide a plasma processing apparatus that suppresses the amount of deactivated radicals as much as possible while suppressing ion injection into a sample during isotropic etching.

In order to solve the above problems, one of the typical plasma processing devices according to the present invention includes a processing chamber in which a sample is plasma-processed and a high-frequency power source that supplies high-frequency microwave power for generating plasma. A magnetic field forming mechanism that forms a magnetic field in the processing chamber, a sample table on which the sample is placed, a first shielding plate that shields ions incident on the sample table, and ions incident on the sample table. In a plasma processing apparatus including a second shielding plate that is shielded and arranged below the first shielding plate, the first shielding plate has a plurality of first openings, and the second shielding plate has a plurality of first openings. The shield plate has a plurality of second openings, and each of the second openings is a position where each of the lines of magnetic force passing through each of the first openings intersects the second shield plate. Achieved by not being placed in.
Further, one of the typical plasma processing devices according to the present invention includes a processing chamber in which a sample is plasma-processed, a high-frequency power source for supplying high-frequency microwave power for generating plasma, and a magnetic field in the processing chamber. The magnetic field forming mechanism for forming the sample, the sample table on which the sample is placed, the first shielding plate that shields the ions incident on the sample table, and the first shielding plate that shields the ions incident on the sample table. In a plasma processing apparatus including a second shielding plate arranged below the shielding plate,
Based on the change in the direction of the magnetic field lines formed by the magnetic field forming mechanism, the second shielding plate is prevented so that the magnetic force lines passing through the opening of the first shielding plate do not pass through the opening of the second shielding plate. Achieved by further providing a drive mechanism for controlling the relative displacement of the opening of the first shielding plate with respect to the opening of the first shielding plate or the relative displacement of the opening of the second shielding plate with respect to the opening of the first shielding plate. Will be done.

According to the present invention, it is possible to provide a plasma processing apparatus that suppresses the amount of deactivated radicals as much as possible while suppressing the incident of ions on the sample during isotropic etching.
Issues, configurations and effects other than those described above will be clarified by the description of the following embodiments.

FIG. 1 is a schematic overall configuration sectional view of the plasma processing apparatus according to the first embodiment of the present invention. FIG. 2 is a plan view showing a first shielding plate according to the first embodiment of the present invention. FIG. 3 is a plan view showing a second shielding plate according to the first embodiment of the present invention. FIG. 4 is a plan view in which the shielding plates shown in FIGS. 2 and 3 are overlapped. FIG. 5 is an enlarged cross-sectional view schematically showing the relationship between the shielding plate, ions, radicals, and lines of magnetic force. FIG. 6 is a graph showing the radical concentration distribution on the sample when each of the shielding plate according to the first embodiment of the present invention and the shielding plate described in Patent Document 1 is used. FIG. 7 is an enlarged cross-sectional view schematically showing the relationship between the thickness of the shielding plate, the distance between the two shielding plates, and the hole diameter of the through hole. FIG. 8 is a plan view showing a modified example of the first shielding plate according to the first embodiment of the present invention. FIG. 9 is a plan view showing a modified example of the second shielding plate according to the first embodiment of the present invention. FIG. 10 is a plan view in which the shielding plates shown in FIGS. 8 and 9 are overlapped. FIG. 11 is an enlarged cross-sectional view showing a shielding plate according to a second embodiment of the present invention. FIG. 12 is a schematic overall configuration sectional view of the plasma processing apparatus according to the third embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the present specification, "upper" means the side closer to the magnetron and "lower" means the side closer to the sample table in the processing chamber. The term "isotropic etching" refers to the time when etching is performed mainly by a sample surface reaction using only radicals.

[First Embodiment]
FIG. 1 shows a schematic overall configuration sectional view of the plasma processing apparatus according to the first embodiment of the present invention. In the apparatus of the present embodiment, the 2.45 GHz microwave (high frequency power) supplied from the magnetron 103, which is a high frequency power source, to the vacuum processing chamber 117 via the dielectric window 111, and the solenoid coil 108, which is a magnetic field forming mechanism, are used. Plasma can be generated in the vacuum processing chamber 117 by electron cyclotron resonance (ECR) with the created magnetic field. Such a plasma processing apparatus is called an ECR plasma processing apparatus.

Further, the high frequency power supply 124 is connected to the sample 116 placed on the sample table 115 via the matching device 123. The inside of the vacuum processing chamber 117 is connected to the pump 122 via a valve 121, and the internal pressure can be adjusted by the opening degree of the valve 121.

Further, the plasma processing apparatus has a dielectric shielding plate (shielding unit) 112 inside the vacuum processing chamber 117. The shielding plate 112 is a first shielding plate 113 that shields ions incident on the sample table 115, and a second shielding plate that shields ions incident on the sample table 115 and is arranged below the first shielding plate 113. The second shielding plate 114 is composed of 114, and is installed in parallel below the first shielding plate 113 at intervals. The inside of the vacuum processing chamber 117 is divided into a first region 118 and a second region 119 by the shielding plate 112.

The plasma processing apparatus used in the present embodiment has a characteristic that when the microwave frequency is 2.45 GHz, plasma can be generated near a surface having a magnetic field strength of 0.0875 T. Therefore, if the magnetic field is adjusted so that the plasma generation region is located between the shielding plate 112 and the dielectric window 111 (first region 118), plasma can be generated on the dielectric window 111 side of the shielding plate 112. Since the generated ions can hardly pass through the shielding plate 112, only radicals can be irradiated to the sample 116. At this time, in the sample 116, isotropic etching mainly composed of a surface reaction caused only by radicals proceeds.

On the other hand, if the magnetic field is adjusted so that the plasma generation region is located between the shielding plate 112 and the sample 116 (second region 119), plasma can be generated on the sample 116 side from the shielding plate 112, and ions and radicals can be generated. Both can be supplied to sample 116. At this time, in the sample 116, anisotropic etching using an ion assist reaction, which promotes the reaction of radicals by ions, proceeds.

The control device 120 is used to adjust or switch the height position of the plasma generation region with respect to the height position of the shielding plate 112 (upper or lower), adjust the period for holding each height position, and the like. Can be done.

FIG. 2 is a plan view showing a first shielding plate 113 according to the first embodiment of the present invention. Through holes (first openings) 130 having the same hole diameter are uniformly arranged in the surface of the first shielding plate 113. In the present embodiment, "uniform" means that when concentric circles with the same diameter difference (including the case where the radius is zero) are drawn, through holes 130 having a center point on the same circle have the same pitch in the circumferential direction. It means that it is arranged. When the through holes 130 are continuous along the radial direction, it is more preferable that the pitches in the radial direction are equal.

FIG. 3 is a plan view showing a second shielding plate 114 according to the first embodiment of the present invention. In the through hole (second opening) 131 arranged on the entire surface of the second shielding plate 114, the magnetic field line passing through the through hole 130 of the first shielding plate 113 at the time of isotropic etching is the second shielding plate. It is arranged at a place other than the place where it intersects with 114. In other words, each of the through holes 131 is not arranged at a position where each of the lines of magnetic force passing through each of the through holes 130 intersects the second shielding plate 114. When viewed from the plan view, the through holes 130 and 131 each have a circular shape and are arranged radially.

In the plasma processing apparatus of the present embodiment, since the magnetic field arrangement is such that the intervals between the magnetic field lines widen from the upper part to the lower part of the vacuum processing chamber 117, the through holes arranged in the second shielding plate 114 of FIG. 3 In 131, the closer to the center of the second shielding plate 114, the smaller the hole diameter, and the closer to the outer periphery, the larger the hole diameter. That is, the diameter of each of the through holes 131 gradually increases from the center of the second shielding plate 114 toward the outer circumference.

FIG. 4 is a plan view in which the shielding plates shown in FIGS. 2 and 3 are overlapped, and the through hole 131 is shown by a dotted line. The first shielding plate 113 and the second shielding plate 114 are held in the vacuum processing chamber 117 at intervals.

Here, FIG. 5 schematically shows the relationship between the shielding plate, ions, radicals, and magnetic field lines in an enlarged cross-sectional view. Since the ions 140 generated from the plasma in the first region 118 have an electric charge, they move as shown in the orbit 151 by bipolar diffusion with electrons spiraling along the magnetic field lines 150. On the other hand, since the radical 141 has no electric charge, it passes through the through hole 130 of the first shielding plate 113 and the through hole 131 of the second shielding plate 114 along the flow of the fluid, and passes through the through hole 131 of the second shielding plate 114, and passes through the second region 119. Move to.

Here, at the time of isotropic etching, the through hole 131 of the second shielding plate 114 is provided at a location other than the portion where the magnetic field lines passing through the through hole 130 of the first shielding plate 113 intersect with the second shielding plate 114. Due to the arrangement, the ion 140 cannot move to the second region 119 and does not reach the sample 116. This enables ion shielding.

Further, since the through holes 130 and 131 are arranged on the entire surface of the first shielding plate 113 and the second shielding plate 114, the distribution of the radicals 141 reaching the sample 116 is uniform in the plane of the sample 116. Become. Further, in the second shielding plate 114, through holes 131 can be installed at all positions other than the positions intersecting the magnetic field lines 150 that have passed through the through holes 130 of the first shielding plate 113 during isotropic etching. Therefore, while improving the shielding property of ions, the rate at which radicals 141 collide with the shielding plate 112 when passing through the shielding plate 112 and are deactivated can be reduced, and the radicals are deactivated by the time they reach the sample 116. The amount of radicals 141 to be generated can be suppressed as much as possible.

As described above, it is possible to make the distribution of radicals reaching the sample surface uniform and suppress the amount of deactivated radicals as much as possible while suppressing the incident of ions on the sample during isotropic etching.

In FIGS. 2 and 3, the through holes 130 and the through holes 131 are arranged concentrically and radially, but the arrangement is not limited to this, and the through holes of the first shielding plate 113 at the time of isotropic etching are used. As long as the relationship that the through hole 131 of the second shielding plate 114 is arranged at a place other than the place where the magnetic field lines passing through the 130 intersect with the second shielding plate 114, a grid-like arrangement or the like may be used. .. It is preferable that the through holes are uniformly arranged even in the lattice-like arrangement, and in such a case, "uniform" means that the pitches of the through holes arranged in the row direction and the column direction are equal.

Here, the result of calculating the radical concentration distribution on the sample 116 when the shielding plate of the present embodiment and the one-sheet structure shielding plate and the two-sheet structure shielding plate in Patent Document 1 as a comparative example are used, respectively. Is shown in FIG. As shown in FIG. 6, by using the shielding plate of the present embodiment, the radical concentration distribution in the sample 116 is more uniform in the plane than that of the single-layered shielding plate, and the radical concentration is higher than that of the double-layered shielding plate. It turns out that it can be obtained.

FIG. 7 is an enlarged cross-sectional view of the shielding plate used for explaining the relationship between the thickness of the shielding plate, the distance between the two shielding plates, and the hole diameter of the through hole. Here, the thickness of the first shielding plate 113 is a, the distance between the first shielding plate 113 and the second shielding plate 114 is b, the thickness of the second shielding plate 114 is c, and the first shielding plate Let θ be the angle formed by the magnetic field line 150 passing through the inner edge of the upper surface of the through hole 130 of 113 and the thickness direction of the first shielding plate 113 (the axial direction of the vacuum processing chamber 117).

Since each of the dimensions a, b, and c is sufficiently small compared to the vertical length of the vacuum processing chamber 117, the angle θ defined by one magnetic field line 150 can be regarded as constant in the range of (a + b + c). can. At this time, when the vacuum processing chamber 117 is viewed in a plan view from above, an overlapping portion is formed in which the through hole 130 of the first shielding plate 113 and the through hole 131 of the second shielding plate 114 overlap. On the upper surface of the second shielding plate 114, when the length of the overlapping portion in the direction from the center of the second shielding plate 114 toward the outer circumference (diameter direction) is s, the upper limit of s is (a + b) tan θ. By doing so, it is possible to suppress the ion incident on the sample 116.

The present invention is not limited to the above-described embodiment, and includes various modifications. For example, as shown in the plan views of FIGS. 8 and 9, the through hole 130 of the first shielding plate 113 can be replaced with the through slit 160 of the first shielding plate 113, and the second shielding plate 114 The through hole 131 can be replaced with the through slit 161 of the second shielding plate 114. At this time, a plan view in which the shielding plates shown in FIGS. 8 and 9 are overlapped is shown in FIG. 10, but here, the through slit 161 is shown by a dotted line. It is preferable that the circumferential lengths and pitches of the through slits 160 and 161 arranged concentrically are equal to each other. Further, it is preferable that the through slit 161 has a narrower width as it is closer to the center of the second shielding plate 114 and a wider width as it is closer to the outer periphery. The width of the through slit 160 is preferably narrower than the width of the through slit 161 when viewed in plan view.

Further, in FIGS. 8 and 9, the through slits 160 and the through slits 161 are arranged concentrically and radially, but the arrangement is not limited to this, and a grid-like arrangement may be used.

[Embodiment 2]
FIG. 11 is an enlarged cross-sectional view showing a shielding plate according to a second embodiment of the present invention. In the device of this embodiment, the distribution of magnetic field lines changes depending on the value of the current flowing through the solenoid coil 108. Specifically, when the current value is continuously changed during isotropic etching, the distribution of the lines of magnetic force continuously changes from the lines of magnetic force 150-1 to the lines of magnetic force 150-2. That is, the position where the upper surface of the second shielding plate 114 and the magnetic field line intersect is displaced by the distance L.

In the present embodiment, through holes 130 having the same hole diameter are uniformly arranged in the plane on the first shielding plate 113 as in the first embodiment. Further, the through hole 131 arranged on the entire surface of the second shielding plate 114 is a portion where the magnetic field lines passing through the through hole 130 of the first shielding plate 113 intersect with the second shielding plate 114 at the time of isotropic etching. It is placed in a place other than. Then, the hole diameter of the through hole 131 of the second shielding plate 114 is reduced by the amount of the displacement distance L due to the change of the current value at the position where the upper surface of the second shielding plate 114 and the magnetic field line 150 intersect during isotropic etching. doing.

The first shielding plate 113 and the second shielding plate 114 are held in the vacuum processing chamber 117 at intervals. As a result, during isotropic etching, the shielding property of ions is maintained even if the current value is changed, and the current value flowing through the solenoid coil 108 can be made variable.

FIG. 5 shows a mechanism capable of suppressing ion injection into the sample during isotropic etching, making the distribution of radicals reaching the sample surface uniform, and suppressing the amount of deactivated radicals as much as possible. Since it is the same as the first embodiment shown, duplicate description will be omitted.

[Embodiment 3]
FIG. 12 is a schematic overall configuration sectional view of the plasma processing apparatus according to the third embodiment of the present invention. In the device of the present embodiment, the distribution of the magnetic field lines 150 can be changed by changing the value of the current flowing through the solenoid coil 108. Specifically, by continuously changing the current value, the distribution of the magnetic field lines 150 is also continuously changed. That is, the position where the upper surface of the second shielding plate 114 and the magnetic field line 150 intersect is continuously displaced.

In the present embodiment, through holes 130 having the same hole diameter are uniformly arranged in the plane on the first shielding plate 113 as in the first embodiment. Further, the through hole 131 arranged on the entire surface of the second shielding plate 114 is a portion where the magnetic field lines passing through the through hole 130 of the first shielding plate 113 intersect with the second shielding plate 114 at the time of isotropic etching. It is placed in a place other than. Here, the distance b between the first shielding plate 113 and the second shielding plate 114 is due to the displacement due to the change in the current value at the position where the upper surface of the second shielding plate 114 and the magnetic field line 150 intersect during isotropic etching. To change.

Here, the interval b is controlled by driving an actuator (not shown) according to the current value flowing through the solenoid coil 108 according to the control from the drive control device (drive mechanism) 170, and the first shielding plate 113 or the second shielding plate 113 or the second. The shielding plate 114 (that is, the through hole 130 or the through hole 131) can be displaced vertically and vertically. As a result, during isotropic etching, the shielding property of ions is maintained even if the current value is changed, and the current value flowing through the solenoid coil 108 can be made variable.

FIG. 5 shows a mechanism capable of suppressing ion injection into the sample during isotropic etching, making the distribution of radicals reaching the sample surface uniform, and suppressing the amount of deactivated radicals as much as possible. Since it is the same as the first embodiment shown, duplicate description will be omitted.

The above-described embodiments have been described in detail in order to explain the present invention in an easy-to-understand manner, and are not necessarily limited to those having all the described configurations. Further, it is possible to replace a part of the configuration of one embodiment with the configuration of another embodiment, and it is also possible to add the configuration of another embodiment to the configuration of one embodiment. Further, it is possible to add / delete / replace other configurations with respect to a part of the configurations of each embodiment.

103 ... Magnetron, 108 ... Solenoid coil, 111 ... Dielectric window, 112 ... Shielding plate, 113 ... First shielding plate, 114 ... Second shielding plate, 115 ... Sample stand, 116 ... Sample, 117 ... Vacuum processing room , 118 ... 1st region, 119 ... 2nd region, 120 ... control device, 121 ... valve, 122 ... pump, 123 ... matching unit, 124 ... high frequency power supply, 130 ... through hole of first shielding plate 113, 131 ... through hole of the second shielding plate 114, 140 ... ion, 141 ... radical, 150 ... magnetic field line, 151 ... orbit of ion 140, 160 ... through slit of the first shielding plate 113, 161 ... second shielding plate 114 through slits, 170 ... Drive control device

Claims (7)

A processing chamber in which a sample is treated with plasma, a high-frequency power source for supplying high-frequency microwave power for generating plasma, a magnetic field forming mechanism for forming a magnetic field in the processing chamber, and a sample table on which the sample is placed. And a plasma including a first shielding plate that shields ions incident on the sample table and a second shielding plate that shields ions incident on the sample table and is arranged below the first shielding plate. In the processing equipment
The first shielding plate has a plurality of first openings.
The second shielding plate has a plurality of second openings and has a plurality of second openings.
A plasma processing apparatus, wherein each of the second openings is not arranged at a position where each of the lines of magnetic force passing through each of the first openings intersects with the second shielding plate. In the plasma processing apparatus according to claim 1,
The first opening and the second opening in the plan view are circular and have a circular shape.
A plasma processing apparatus characterized in that the diameter of each of the second openings gradually increases from the center of the second shielding plate toward the outer circumference. In the plasma processing apparatus according to claim 1,
The first opening and the second opening are arranged radially, the thickness of the first shielding plate is a, the distance between the first shielding plate and the second shielding plate is b, and the above. The angle formed by the magnetic field line passing through the first opening and the thickness direction of the first shielding plate is θ, and the first opening in the plan view of the first shielding plate and the second shielding plate. When the width of the portion where the portion and the second opening overlap is defined as s, each of the a, the b, the θ, and the s satisfies the relationship of s ≦ (a + b) tan θ.
The plasma processing apparatus, wherein the predetermined direction is the radial direction of the second shielding plate. In the plasma processing apparatus according to claim 1,
A plasma processing apparatus in which the first opening and the second opening in the plan view are circular or slit-shaped. In the plasma processing apparatus according to claim 1,
The first opening and the second opening in the plan view are slit-shaped.
A plasma processing apparatus characterized in that the slits of the first opening and the slits of the second opening are arranged concentrically. In the plasma processing apparatus according to claim 5.
A plasma processing apparatus characterized in that the width of the slit of the first opening is narrower than the width of the slit of the second opening. A processing chamber in which a sample is treated with plasma, a high-frequency power source for supplying high-frequency microwave power for generating plasma, a magnetic field forming mechanism for forming a magnetic field in the processing chamber, and a sample table on which the sample is placed. And a plasma including a first shielding plate that shields ions incident on the sample table and a second shielding plate that shields ions incident on the sample table and is arranged below the first shielding plate. In the processing equipment
Based on the change in the direction of the magnetic field lines formed by the magnetic field forming mechanism, the second shielding plate is prevented so that the magnetic force lines passing through the opening of the first shielding plate do not pass through the opening of the second shielding plate. A drive mechanism for controlling the relative displacement of the opening of the first shielding plate with respect to the opening of the first shielding plate or the relative displacement of the opening of the second shielding plate with respect to the opening of the first shielding plate is further provided. Plasma processing equipment.

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