JP2021085850A - Method for estimating thickness of silane coupling film - Google Patents

Method for estimating thickness of silane coupling film Download PDF

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JP2021085850A
JP2021085850A JP2019217163A JP2019217163A JP2021085850A JP 2021085850 A JP2021085850 A JP 2021085850A JP 2019217163 A JP2019217163 A JP 2019217163A JP 2019217163 A JP2019217163 A JP 2019217163A JP 2021085850 A JP2021085850 A JP 2021085850A
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朋幸 下平
Tomoyuki Shimohira
朋幸 下平
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Shinko Electric Industries Co Ltd
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Abstract

To provide a method for estimating the thickness of a silane coupling film, enabling the average thickness of the film to be estimated in a short time.SOLUTION: A method for estimating the thickness of a silane coupling film includes the steps of: dipping a measurement object having a silane coupling film formed on the surface of copper into a mixed solution of hydrogen peroxide solution and sulfuric acid to dissolve the copper and a silane coupling agent in the mixed solution and cutting the binding of silicon molecules constituting the silane coupling agent; quantitatively analyzing the concentration of silicon atoms in the mixed solution; and estimating the thickness of the silane coupling film on the basis of a pre-prepared calibration curve showing a relationship between the concentration of silicon atoms and the thickness of the silane coupling film and the concentration of the silicon atoms analyzed in the quantitative analysis step.SELECTED DRAWING: Figure 5

Description

本発明は、シランカップリング被膜の膜厚推定方法に関する。 The present invention relates to a method for estimating the film thickness of a silane coupling film.

例えば、配線基板において、銅の配線パターンが樹脂絶縁層に被覆される構造がある。このような構造では、銅の酸化防止や銅と樹脂絶縁層との密着性向上等の目的で、銅の表面にシランカップリング被膜が形成される場合がある。シランカップリング被膜とは、ケイ素を主成分とするシランカップリング剤の被膜である。 For example, in a wiring board, there is a structure in which a copper wiring pattern is covered with a resin insulating layer. In such a structure, a silane coupling film may be formed on the surface of copper for the purpose of preventing copper oxidation and improving the adhesion between copper and the resin insulating layer. The silane coupling film is a film of a silane coupling agent containing silicon as a main component.

シランカップリング被膜は薄すぎても厚すぎても上記の目的が達成できないため、シランカップリング被膜の膜厚を知ることは重要である。そのため、シランカップリング被膜の膜厚を測定する様々な方法が検討されている(例えば、特許文献1参照)。 It is important to know the film thickness of the silane coupling film because the above objectives cannot be achieved if the silane coupling film is too thin or too thick. Therefore, various methods for measuring the film thickness of the silane coupling film have been studied (see, for example, Patent Document 1).

特開2010−91342号公報Japanese Unexamined Patent Publication No. 2010-91342

しかしながら、従来の方法では、シランカップリング被膜の膜厚を正しく測定できない場合があったり、測定に多大な時間を要したりする問題があった。 However, the conventional method has a problem that the film thickness of the silane coupling film may not be measured correctly or it takes a long time to measure.

本発明は、上記の点に鑑みてなされたものであり、短時間で平均膜厚を推定可能なシランカップリング被膜の膜厚推定方法を提供することを課題とする。 The present invention has been made in view of the above points, and an object of the present invention is to provide a method for estimating the film thickness of a silane coupling film, which can estimate the average film thickness in a short time.

本シランカップリング被膜の膜厚推定方法は、銅の表面にシランカップリング被膜が形成された測定対象物を過酸化水素水と硫酸との混合溶液に浸漬させ、銅及びシランカップリング剤を前記混合溶液に溶解させると共に、前記シランカップリング剤を構成するシリコン分子の結合を切断するステップと、前記混合溶液中のシリコン原子の濃度を定量分析するステップと、事前に作成したシリコン原子の濃度とシランカップリング被膜の膜厚との関係を示す検量線、及び前記定量分析するステップで分析した前記シリコン原子の濃度に基づいて、前記シランカップリング被膜の膜厚を推定するステップと、を有する。 In the method for estimating the thickness of the silane coupling film, the object to be measured in which the silane coupling film is formed on the copper surface is immersed in a mixed solution of hydrogen peroxide solution and sulfuric acid, and the copper and the silane coupling agent are added. A step of dissolving in a mixed solution and breaking the bond of silicon molecules constituting the silane coupling agent, a step of quantitatively analyzing the concentration of silicon atoms in the mixed solution, and a concentration of silicon atoms prepared in advance. It has a calibration line showing the relationship with the film thickness of the silane coupling film, and a step of estimating the film thickness of the silane coupling film based on the concentration of the silicon atom analyzed in the step of the quantitative analysis.

開示の技術によれば、短時間で平均膜厚を推定可能なシランカップリング被膜の膜厚推定方法を提供できる。 According to the disclosed technique, it is possible to provide a method for estimating the film thickness of a silane coupling film, which can estimate the average film thickness in a short time.

シランカップリング被膜について説明する図である。It is a figure explaining the silane coupling film. 本実施形態に係る検量線の作成方法を例示するフローチャートである。It is a flowchart which illustrates the method of making the calibration curve which concerns on this embodiment. Si分子の結合について説明する図である。It is a figure explaining the bond of a Si molecule. 検量線の一例を示す図である。It is a figure which shows an example of the calibration curve. 本実施形態に係るシランカップリング被膜の膜厚推定方法を例示するフローチャートである。It is a flowchart which illustrates the film thickness estimation method of the silane coupling film which concerns on this embodiment.

以下、図面を参照して発明を実施するための形態について説明する。なお、各図面において、同一構成部分には同一符号を付し、重複した説明を省略する場合がある。 Hereinafter, modes for carrying out the invention will be described with reference to the drawings. In each drawing, the same components may be designated by the same reference numerals, and duplicate description may be omitted.

図1は、シランカップリング被膜について説明する図である。図1では、銅の配線パターン11上にシランカップリング被膜12が形成されており、シランカップリング被膜12の膜厚は数nm〜数10nm程度である。配線基板では、銅の配線パターン11は樹脂絶縁層で被覆されるが、シランカップリング被膜12は、ケイ素を主成分とするシランカップリング剤の被膜であり、銅の酸化防止や銅と樹脂絶縁層との密着性向上等の目的で形成される。 FIG. 1 is a diagram illustrating a silane coupling coating. In FIG. 1, the silane coupling film 12 is formed on the copper wiring pattern 11, and the film thickness of the silane coupling film 12 is about several nm to several tens of nm. In the wiring board, the copper wiring pattern 11 is covered with a resin insulating layer, but the silane coupling coating 12 is a coating of a silane coupling agent containing silicon as a main component, which prevents copper from oxidizing and insulates copper from resin. It is formed for the purpose of improving adhesion with the layer.

シランカップリング被膜12は薄すぎても厚すぎても上記の目的が達成できないそのため、シランカップリング被膜12の膜厚を知ることは重要であり、本実施形態では、シランカップリング被膜12の好適な膜厚推定方法を提案する。以下、シランカップリング被膜12の膜厚推定方法について詳説する。 Since the above object cannot be achieved if the silane coupling film 12 is too thin or too thick, it is important to know the film thickness of the silane coupling film 12, and in the present embodiment, the silane coupling film 12 is suitable. We propose a suitable film thickness estimation method. Hereinafter, the method for estimating the film thickness of the silane coupling film 12 will be described in detail.

まず、図2に示すように、事前準備として検量線を作成する。図2は、本実施形態に係る検量線の作成方法を例示するフローチャートである。 First, as shown in FIG. 2, a calibration curve is created as a preliminary preparation. FIG. 2 is a flowchart illustrating a method of creating a calibration curve according to the present embodiment.

図2に示すステップS100では、検量線作成用積層体を準備する。ここでは、図1に示す銅の配線パターン11の表面にシランカップリング被膜12が形成された積層体を検量線作成用積層体とする。又、過酸化水素水と硫酸との混合溶液(以下、過水硫酸溶液とする)を準備する。そして、検量線作成用積層体の一部分を切り出して過水硫酸溶液に浸漬させる。 In step S100 shown in FIG. 2, a laminated body for creating a calibration curve is prepared. Here, a laminate in which the silane coupling coating 12 is formed on the surface of the copper wiring pattern 11 shown in FIG. 1 is used as a laminate for creating a calibration curve. In addition, a mixed solution of hydrogen peroxide solution and sulfuric acid (hereinafter referred to as perwater sulfuric acid solution) is prepared. Then, a part of the laminated body for preparing a calibration curve is cut out and immersed in a hydrogen peroxide solution.

これにより、銅及びシランカップリング剤が過水硫酸溶液に溶解すると共に、シランカップリング剤を構成するSi(シリコン)分子の結合が切断される。ここで、Si分子の結合とは、図3に示すように、Si分子同士の結合(矢印Aで示す部分)とSi分子の官能基と銅との結合(矢印Bで示す部分)を含むが、ステップS100では、Si分子同士の結合とSi分子の官能基と銅との結合の両方が切断される。その結果、過水硫酸溶液にSi原子が分散する。ステップS100に要する時間は、数十秒程度である。 As a result, the copper and the silane coupling agent are dissolved in the hydrogen peroxide solution, and the bonds of the Si (silicon) molecules constituting the silane coupling agent are broken. Here, as shown in FIG. 3, the bond of Si molecule includes the bond between Si molecules (the portion indicated by the arrow A) and the bond between the functional group of the Si molecule and copper (the portion indicated by the arrow B). In step S100, both the bond between Si molecules and the bond between the functional group of the Si molecule and copper are cleaved. As a result, Si atoms are dispersed in the hydrogen peroxide solution. The time required for step S100 is about several tens of seconds.

なお、発明者らの検討によれば、表1に示すように、過水硫酸溶液を用いることでSi分子同士の結合とSi分子の官能基と銅との結合の両方が切断される。これに対して、過硫酸ナトリウムを用いた場合には、Si分子同士の結合は切断されず、Si分子の官能基と銅との結合のみが切断される。又、苛性ソーダを用いた場合には、Si分子同士の結合とSi分子の官能基と銅との結合の何れも切断されない。 According to the study by the inventors, as shown in Table 1, both the bonds between Si molecules and the bonds between the functional groups of Si molecules and copper are cleaved by using the hydrogen peroxide solution. On the other hand, when sodium persulfate is used, the bond between Si molecules is not broken, and only the bond between the functional group of the Si molecule and copper is broken. Further, when caustic soda is used, neither the bond between Si molecules nor the bond between the functional group of Si molecule and copper is cleaved.

Figure 2021085850
Figure 2021085850

従って、本実施形態に係るシランカップリング被膜の膜厚推定方法では、過水硫酸溶液を用いることが好適である。過水硫酸溶液を用いることにより、Si分子同士の結合とSi分子の官能基と銅との結合の両方が切断され、過水硫酸溶液にSi原子が分散するため、後述のステップS101におけるSi原子の濃度の定量分析の精度を向上できる。 Therefore, in the method for estimating the film thickness of the silane coupling film according to the present embodiment, it is preferable to use a hydrogen peroxide solution. By using the perwater sulfate solution, both the bonds between the Si molecules and the bonds between the functional groups of the Si molecules and copper are cleaved, and the Si atoms are dispersed in the perwater sulfate solution. Therefore, the Si atoms in step S101 described later are dispersed. The accuracy of quantitative analysis of the concentration of is improved.

なお、過水硫酸溶液中の過酸化水素の濃度は3%以上であることが好ましく、硫酸の濃度も3%以上であることが好ましい。このような濃度範囲であれば、銅及びシランカップリング剤の過水硫酸溶液への溶解と、シランカップリング剤を構成しているSi分子の結合の切断を確実に実現できる。 The concentration of hydrogen peroxide in the perwater sulfuric acid solution is preferably 3% or more, and the concentration of sulfuric acid is also preferably 3% or more. Within such a concentration range, dissolution of copper and the silane coupling agent in a hydrogen peroxide solution and cleavage of the bonds of Si molecules constituting the silane coupling agent can be surely realized.

過水硫酸溶液中の硫酸の濃度は10%以下であることが好ましい。このような濃度範囲であれば、過水硫酸溶液が銅表面によく濡れ、仮に銅表面に凹凸があってもSi分子の結合の切断を確実に実現できる。 The concentration of sulfuric acid in the hydrogen peroxide solution is preferably 10% or less. Within such a concentration range, the hydrogen peroxide solution gets wet well on the copper surface, and even if the copper surface has irregularities, the bond of Si molecules can be reliably broken.

次に、ステップS101では、所定の分析装置を用いて、過水硫酸溶液中のSi原子の濃度を定量分析する。分析装置としては、例えば、誘導結合プラズマ発光分光分析装置(ICP: Inductivity Coupled Plasma)を用いることができる。 Next, in step S101, the concentration of Si atoms in the hydrogen peroxide solution is quantitatively analyzed using a predetermined analyzer. As the analyzer, for example, an inductively coupled plasma emission spectroscopic analyzer (ICP: Inductivity Coupled Plasma) can be used.

次に、ステップS102では、検量線作成用積層体の他の部分を切り出して断面を露出させ、シランカップリング被膜12の膜厚を測定する。シランカップリング被膜12の膜厚は、例えば、集束イオンビーム走査電子顕微鏡(FIB−SEM)を用いた断面観察により測定できる。必要に応じ、膜厚測定の前に、観察対象となる断面の研磨を行ってもよい。 Next, in step S102, another portion of the calibration curve-forming laminate is cut out to expose the cross section, and the film thickness of the silane coupling film 12 is measured. The film thickness of the silane coupling film 12 can be measured, for example, by observing a cross section using a focused ion beam scanning electron microscope (FIB-SEM). If necessary, the cross section to be observed may be polished before the film thickness measurement.

次に、ステップS103では、ステップS101の結果とステップS102の結果を用いて、シリコン原子の濃度とシランカップリング被膜の膜厚との関係を示す検量線を作成する。例えば、図4に示す検量線を作成できる。図4に示すように、過水硫酸溶液中のSi原子の濃度とシランカップリング被膜12の膜厚には一定の関係がある。そのため、図4に示す検量線を用いることで、シランカップリング被膜12の膜厚を推定可能となる。 Next, in step S103, using the result of step S101 and the result of step S102, a calibration curve showing the relationship between the concentration of silicon atoms and the thickness of the silane coupling film is created. For example, the calibration curve shown in FIG. 4 can be created. As shown in FIG. 4, there is a certain relationship between the concentration of Si atoms in the hydrogen peroxide solution and the film thickness of the silane coupling film 12. Therefore, the film thickness of the silane coupling film 12 can be estimated by using the calibration curve shown in FIG.

図5は、本実施形態に係るシランカップリング被膜の膜厚推定方法を例示するフローチャートである。 FIG. 5 is a flowchart illustrating a method for estimating the film thickness of the silane coupling film according to the present embodiment.

まず、ステップS200は、ステップS100と同様のステップである。すなわち、銅の表面にシランカップリング被膜が形成された測定対象物を過水硫酸溶液に浸漬させ、銅及びシランカップリング剤を過水硫酸溶液に溶解させると共に、シランカップリング剤を構成するシリコン分子の結合を切断する。 First, step S200 is the same step as step S100. That is, the object to be measured in which the silane coupling film is formed on the surface of copper is immersed in the hydrogen peroxide solution, the copper and the silane coupling agent are dissolved in the hydrogen peroxide solution, and the silicon constituting the silane coupling agent is dissolved. Breaks the bonds of molecules.

次に、ステップS201は、ステップS101と同様のステップである。すなわち、過水硫酸溶液中のシリコン原子の濃度を定量分析する。 Next, step S201 is the same step as step S101. That is, the concentration of silicon atoms in the hydrogen peroxide solution is quantitatively analyzed.

次に、ステップS202では、事前に作成したシリコン原子の濃度とシランカップリング被膜の膜厚との関係を示す検量線、及びステップS201で分析したシリコン原子の濃度に基づいて、シランカップリング被膜の膜厚を推定する。 Next, in step S202, based on the calibration curve showing the relationship between the concentration of silicon atoms prepared in advance and the thickness of the silane coupling film, and the concentration of silicon atoms analyzed in step S201, the silane coupling film is formed. Estimate the film thickness.

図4に例示した通り、過水硫酸溶液中のSi原子の濃度とシランカップリング被膜12の膜厚には一定の関係がある。そのため、事前に作成したシリコン原子の濃度とシランカップリング被膜の膜厚との関係を示す検量線を用いれば、過水硫酸溶液中のSi原子の濃度を測定することで、シランカップリング被膜12の膜厚を推定可能となる。 As illustrated in FIG. 4, there is a certain relationship between the concentration of Si atoms in the hydrogen peroxide solution and the film thickness of the silane coupling film 12. Therefore, by using a calibration curve showing the relationship between the concentration of silicon atoms prepared in advance and the film thickness of the silane coupling film, the concentration of Si atoms in the perwater sulfate solution can be measured to obtain the silane coupling film 12 It becomes possible to estimate the film thickness of.

[他の方法との比較]
ここで、本実施形態に係るシランカップリング被膜の膜厚推定方法と他の方法とを比較する。
[Comparison with other methods]
Here, the method for estimating the film thickness of the silane coupling film according to the present embodiment is compared with another method.

第1の方法は、測定対象物を切り出して断面を露出させ、集束イオンビーム走査電子顕微鏡等の高倍率の顕微鏡で測定する方法である。この方法では、断面の研磨が必要となるが、対象となるシランカップリング被膜が薄いため、電子装置による精密な断面研磨が必要となり、測定時間が長くなる。又、断面研磨の加工領域が非常に小さいため、高解像度の観察装置で多点を測定する必要があり、測定時間が長くなる。 The first method is a method in which an object to be measured is cut out to expose a cross section, and measurement is performed with a high-magnification microscope such as a focused ion beam scanning electron microscope. In this method, the cross section needs to be polished, but since the target silane coupling film is thin, precise cross section polishing by an electronic device is required, and the measurement time becomes long. In addition, since the processed area for cross-section polishing is very small, it is necessary to measure multiple points with a high-resolution observation device, which increases the measurement time.

第2の方法は、測定対象物を切り出してシランカップリング被膜を溶かし、紫外可視分光光度計等を用いて光吸収の波長の強度を測定する方法である。この方法では、全ての物質が光吸収をするわけではないため、測定できる皮膜と測定できない皮膜が存在する。又、事前にシランカップリング被膜の成分を確認しておく必要がある。又、ピークが重なると目的の物質の強度を正しく測定できない。 The second method is a method in which an object to be measured is cut out, a silane coupling film is melted, and the intensity of the wavelength of light absorption is measured using an ultraviolet-visible spectrophotometer or the like. In this method, not all substances absorb light, so there are films that can be measured and films that cannot be measured. In addition, it is necessary to confirm the components of the silane coupling film in advance. Moreover, if the peaks overlap, the strength of the target substance cannot be measured correctly.

第3の方法は、測定対象物のシランカップリング被膜に光を当て、反射光の波長をフーリエ変換赤外分光光度計等を用いて分析し、シランカップリング被膜の官能基のピーク波長の強度を測定する方法である。この方法は、シランカップリング被膜の下地である銅の表面の粗度の影響を受ける。すなわち、銅の表面の粗度が大きい場合は、反射光が正しい方向に跳ね返ってこないため、正しく測定できない。 In the third method, light is applied to the silane coupling coating of the object to be measured, the wavelength of the reflected light is analyzed using a Fourier transform infrared spectrophotometer or the like, and the intensity of the peak wavelength of the functional group of the silane coupling coating is used. Is a method of measuring. This method is affected by the roughness of the copper surface, which is the base of the silane coupling coating. That is, when the surface roughness of copper is large, the reflected light does not bounce back in the correct direction, so that the measurement cannot be performed correctly.

これに対して、本実施形態に係るシランカップリング被膜の膜厚推定方法では、過水硫酸溶液中のSi原子の濃度を計測することでシランカップリング被膜の膜厚を推定できるため、短時間で広い領域のシランカップリング被膜の平均膜厚を推定可能となる。特に、第1の方法と比べると、測定時間を大幅に短縮できる。又、第2の方法や第3の方法のように、正しく測定できない場合がない。 On the other hand, in the method for estimating the film thickness of the silane coupling film according to the present embodiment, the film thickness of the silane coupling film can be estimated by measuring the concentration of Si atoms in the perwater sulfuric acid solution, so that the film thickness can be estimated for a short time. The average film thickness of the silane coupling film in a wide area can be estimated. In particular, the measurement time can be significantly shortened as compared with the first method. In addition, unlike the second method and the third method, there is no case where the measurement cannot be performed correctly.

このように、本実施形態によれば、短時間で平均膜厚を推定可能なシランカップリング被膜の膜厚推定方法を実現できる。 As described above, according to the present embodiment, it is possible to realize a method for estimating the film thickness of the silane coupling film, which can estimate the average film thickness in a short time.

以上、好ましい本実施形態について詳説したが、上述した本実施形態に制限されることはなく、特許請求の範囲に記載された範囲を逸脱することなく、上述した本実施形態に種々の変形及び置換を加えることができる。 Although the preferred embodiment has been described in detail above, the present embodiment is not limited to the above-described embodiment, and various modifications and substitutions are made to the above-described embodiment without departing from the scope of claims. Can be added.

11 配線パターン
12 シランカップリング被膜
11 Wiring pattern 12 Silane coupling coating

Claims (4)

銅の表面にシランカップリング被膜が形成された測定対象物を過酸化水素水と硫酸との混合溶液に浸漬させ、銅及びシランカップリング剤を前記混合溶液に溶解させると共に、前記シランカップリング剤を構成するシリコン分子の結合を切断するステップと、
前記混合溶液中のシリコン原子の濃度を定量分析するステップと、
事前に作成したシリコン原子の濃度とシランカップリング被膜の膜厚との関係を示す検量線、及び前記定量分析するステップで分析した前記シリコン原子の濃度に基づいて、前記シランカップリング被膜の膜厚を推定するステップと、を有するシランカップリング被膜の膜厚推定方法。
The object to be measured having a silane coupling film formed on the surface of copper is immersed in a mixed solution of hydrogen peroxide solution and sulfuric acid to dissolve copper and the silane coupling agent in the mixed solution, and the silane coupling agent. Steps to break the bonds of the silicon molecules that make up the
The step of quantitatively analyzing the concentration of silicon atoms in the mixed solution, and
The thickness of the silane coupling film is based on the calibration curve showing the relationship between the concentration of silicon atoms prepared in advance and the thickness of the silane coupling film, and the concentration of the silicon atoms analyzed in the step of the quantitative analysis. And a method for estimating the thickness of a silane coupling coating.
前記検量線を事前に作成するステップは、
銅の表面にシランカップリング被膜が形成された検量線作成用積層体の一部分を切り出して過酸化水素水と硫酸との混合溶液に浸漬させ、銅及びシランカップリング剤を前記混合溶液に溶解させると共に、前記シランカップリング剤を構成するシリコン分子の結合を切断するステップと、
前記混合溶液中のシリコン原子の濃度を定量分析するステップと、
前記検量線作成用積層体の他の部分を切り出して断面を露出させ、前記シランカップリング被膜の膜厚を測定するステップと、
前記定量分析するステップの結果と前記膜厚を測定するステップの結果を用いて前記検量線を作成するステップと、を有する請求項1に記載のシランカップリング被膜の膜厚推定方法。
The step of creating the calibration curve in advance is
A part of the laminate for creating a calibration line having a silane coupling film formed on the surface of copper is cut out and immersed in a mixed solution of hydrogen peroxide solution and sulfuric acid, and copper and a silane coupling agent are dissolved in the mixed solution. At the same time, the step of breaking the bond of the silicon molecule constituting the silane coupling agent, and
The step of quantitatively analyzing the concentration of silicon atoms in the mixed solution, and
A step of cutting out another part of the laminate for creating a calibration curve to expose a cross section and measuring the film thickness of the silane coupling film.
The method for estimating the film thickness of a silane coupling coating according to claim 1, further comprising a step of creating the calibration curve using the result of the step of quantitative analysis and the result of the step of measuring the film thickness.
前記混合溶液中の過酸化水素の濃度が3%以上、かつ硫酸の濃度が3%以上である請求項1又は2に記載のシランカップリング被膜の膜厚推定方法。 The method for estimating the film thickness of a silane coupling film according to claim 1 or 2, wherein the concentration of hydrogen peroxide in the mixed solution is 3% or more and the concentration of sulfuric acid is 3% or more. 前記混合溶液中の硫酸の濃度が10%以下である請求項1乃至3の何れか一項に記載のシランカップリング被膜の膜厚推定方法。 The method for estimating the film thickness of a silane coupling film according to any one of claims 1 to 3, wherein the concentration of sulfuric acid in the mixed solution is 10% or less.
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JP2011231404A (en) * 2011-04-27 2011-11-17 Toyo Seikan Kaisha Ltd Surface-treated metallic plate, surface treatment method of the same, resin-coated metallic plate, can, and can lid
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04173983A (en) * 1990-11-07 1992-06-22 Shikoku Chem Corp Surface treatment of copper and copper alloy
JPH10239241A (en) * 1997-02-27 1998-09-11 Nec Corp Measuring apparatus for etched amount
JP2008071810A (en) * 2006-09-12 2008-03-27 Fujifilm Corp Method of polishing semiconductor device
WO2009110364A1 (en) * 2008-03-04 2009-09-11 日本ペイント株式会社 Copper surface treatment agent and surface treatment method
JP2011231404A (en) * 2011-04-27 2011-11-17 Toyo Seikan Kaisha Ltd Surface-treated metallic plate, surface treatment method of the same, resin-coated metallic plate, can, and can lid
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