JP2021077620A - Display apparatus having substrate hole - Google Patents

Abstract

To provide a display apparatus reduced in a non-pixel area.SOLUTION: A display apparatus 100 includes: a substrate 101 including a pixel area AA including a disconnected area DA which encloses a hole area HA; an organic light emitting element 134 formed in the pixel area AA and the disconnected area DA; a plurality of inorganic insulating layers disposed below the organic light emitting element 134; a disconnection structure 110 which is disposed in the disconnected area DA and encloses the hole area HA; and an internal dam 108 which is disposed in the disconnected area DA and encloses the disconnection structure 110. The disconnection structure 110 includes an eave portion 110a which is formed simultaneously with the internal dam 108 and a trench 110b which is formed by etching the plurality of inorganic insulating layers disposed below the eave portion 110a. The disconnection structure 110 is configured to have a predetermined overhang and a predetermined depth by the eave portion 110a and the trench structure 110b.SELECTED DRAWING: Figure 2

Description

The present specification relates to a display device, and more particularly to a display device including a pixel region including a substrate hole.

Video display devices that embody various information on screens are the core technology of the information and communication era, and are developing toward thinner, lighter, portable, and higher performance. Therefore, a flat plate display device capable of reducing the weight and volume, which are the disadvantages of a cathode ray tube (CRT), is in the limelight.

Examples of the flat plate display device include a liquid crystal display device (Liquid Crystal Display: LCD), a plasma display panel (Plasma Display Panel: PDP), an electric field emission display device (Electroluminance Display: ELD), and a micro LED display device (Micro-LED Display). : ΜLED) and the like.

This flat plate display device is not only used in various types of devices such as TVs, monitors, and mobile phones, but is also developed by adding cameras, speakers, and sensors. However, since the camera, the speaker, the sensor, and the like are arranged in the non-pixel area located outside the pixel area of the display device, the conventional display device has a problem that the non-pixel area increases and the pixel area decreases. is there.

JP-A-2018-072841

In order to reduce the non-pixel area, the inventors of the present specification have attempted to provide a substrate hole inside the pixel area where a camera can capture an image. However, the inventors of the present specification have recognized the fact that the substrate holes allow moisture to permeate the pixels around the substrate holes, resulting in defects. Therefore, the inventors of the present specification have studied a disruption structure of an organic light emitting device capable of blocking a moisture permeation path through an organic light emitting device formed on the front surface of a pixel region. Then, we studied a structure that can reduce the discontinuity region between the substrate hole and the pixel region by the discontinuity structure. Therefore, the present specification is for solving the above-mentioned problems, and the present specification provides a display device including a discontinuity structure capable of reducing a discontinuity region.

The display device according to the embodiment of the present specification is arranged below the substrate including the pixel region including the discontinuity region surrounding the hall region, the organic light emitting element formed in the pixel region and the discontinuity region, and the organic light emitting element. Including a plurality of inorganic insulating films, a breaking structure arranged in the breaking region and surrounding the hole region, and an internal dam arranged in the breaking region and surrounding the breaking structure, the breaking structure is formed at the same time as the internal dam. The break structure includes a trench formed by engraving a plurality of inorganic insulating films arranged in the eaves and the lower part of the eaves, and the discontinuous structure has a predetermined overhang and a predetermined depth due to the eaves and the trench structure. Is configured to have.

In the present specification, the area of the non-pixel region can be reduced by arranging the substrate hole in which the camera module is arranged in the pixel region.

Further, in the present specification, the dissociated structure forms an eaves portion, forms a trench, and dissociates the organic light emitting element. This blocks or delays the influx of moisture or oxygen that can permeate through the organic light emitting device into the pixel region by the disrupted structure.

It is a figure which shows the display device which concerns on one Example of this specification. It is sectional drawing which shows the display device cut out along the line "I-I'" in FIG. It is sectional drawing which shows the display device which concerns on other Examples of this specification. It is sectional drawing which shows the display device which concerns on another Example of this specification. It is sectional drawing which shows the display device which concerns on another Example of this specification. It is sectional drawing which shows the display device which concerns on another Example of this specification. It is sectional drawing which shows the display device which concerns on another Example of this specification. It is sectional drawing which shows the display device which concerns on another Example of this specification.

The advantages and features of this specification, and how to achieve them, will become clear with reference to the examples described in detail with the accompanying drawings. However, the present specification is not limited to the examples disclosed below, but is embodied in various shapes different from each other, and the present embodiment is merely such that the disclosure of the present specification is complete. It is provided in order to fully inform those who have ordinary knowledge in the field of technology to which the present specification belongs the scope of the invention, and the present specification is only defined by the claims. ..

The shapes, areas, ratios, angles, numbers, etc. disclosed in the drawings for explaining the examples of the present specification are exemplary and are not limited to the matters illustrated in the present specification. Absent. Throughout the specification, the same reference numerals refer to the same components. Further, in explaining the present specification, if it is determined that a specific description of the related publicly known technology may unnecessarily obscure the gist of the present specification, the detailed description thereof will be omitted. When "including", "having", "being done", etc. referred to herein are used, other parts may be added as long as "only" is not used. When a component is expressed in the singular, it includes a case where a plurality of components are included unless otherwise specified.

In interpreting the components, it is interpreted as including the error range without any explicit description.

When explaining the positional relationship, for example, when the two-part positional relationship is explained, such as "to the top", "to the top", "to the bottom", "to the next", etc., "immediately" Alternatively, one or more other parts may be located between the two parts, as long as "direct" is not used.

What is referred to as "on" an element or layer having different elements or layers includes any case where another layer or another element is interposed immediately above or in the middle of the other element.

In addition, the first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used solely to distinguish one component from the other. Therefore, the first component referred to below may be the second component within the technical ideas of the present specification.

Throughout the specification, the same reference numerals refer to the same components.
The area and thickness of each configuration shown in the drawings are shown for convenience of explanation and are not necessarily limited to the area and thickness of the configurations shown herein.

Each feature of the various embodiments herein can be partially or wholly coupled to or combined with each other, technically diverse interlocking and driving, and each embodiment is independent of each other. It may be possible to carry it out together, or it may be carried out together in a related relationship.

Hereinafter, examples according to the present specification will be described in detail with reference to the accompanying drawings.

The display device 100 according to an embodiment of the present specification will be described with reference to FIGS. 1 and 2.
The display device 100 shown in FIGS. 1 and 2 can include a pixel region AA and a non-pixel region NA.

In the non-pixel region NA, a plurality of pads 122 that supply drive signals to each of the plurality of signal lines 106 arranged in the pixel region AA are formed. Here, the signal line 106 can include at least one of a scan line SL, a data line DL, a high potential voltage VDD supply line, and a low potential voltage VSS supply line.

The pixel region AA can further include a discontinuity region DA and a hall region HA.

Since the hall region HA is arranged in the pixel region AA, the hall region HA can be surrounded by a plurality of sub-pixel SPs arranged in the pixel region AA. The hole region HA is exemplified to have a circular shape, but is not limited thereto, and may be formed in a polygonal or elliptical shape. That is, the shape of the Hall region HA can be determined by the shape of the corresponding sensor module.

The sub-pixel SP is configured to include a light emitting diode 130. The sub-pixel SP can include a light emitting diode 130 and a pixel drive circuit that independently drives the light emitting diode 130. In the following, an organic light emitting diode will be described as an example of the light emitting diode 130.

The pixel drive circuit can include a switching transistor TS, a drive transistor TD, and a storage capacitor Cst.

When the scan pulse is supplied to the scan line SL, the switching transistor TS is turned on and supplies the data signal supplied to the data line DL to the storage capacitor Cst and the gate electrode of the drive transistor TD.

The drive transistor TD adjusts the brightness of the light emitting diode 130 by controlling the current supplied from the high potential voltage VDD supply line to the light emitting diode 130 in response to the data signal supplied to the gate electrode of the drive transistor TD. Then, even if the switching transistor TS is turned off, the drive transistor TD supplies a current by the voltage charged in the storage capacitor Cst, and the light emitting diode 130 can maintain the light emission.

As shown in FIG. 2, the transistor 150 has a multilayer structure between the active layer 154 arranged on the active buffer layer 114, the gate electrode 152 superimposed on the active layer 154 with the gate insulating film 116 interposed therebetween. It includes a source electrode 156 and a drain electrode 158 formed on the insulating film 102 and in contact with the active layer 154. However, the present invention is not limited to this, and the active buffer layer 114 can be omitted if necessary.

The active layer 154 is formed of at least one of an amorphous semiconductor material, a polycrystalline semiconductor material, and an oxide semiconductor material. The active layer 154 can include a channel region, a source region and a drain region. The channel region is superimposed on the gate electrode 152 with the gate insulating film 116 interposed therebetween, and forms a channel region between the source electrode 156 and the drain electrode 158. The source region of the active layer 154 is electrically connected to the source electrode 156 through a contact hole penetrating the gate insulating film 116 and the multilayer insulating film 102. The drain region of the active layer 154 is electrically connected to the drain electrode 158 through a contact hole penetrating the gate insulating film 116 and the multilayer insulating film 102.

A multi-buffer layer 112 is included between the active layer 154 and the substrate 101. The multi-buffer layer 112 delays the diffusion of moisture and / or oxygen that has permeated the substrate 101. The active buffer layer 114, which may be located on the multi-buffer layer 112, can serve to protect the active layer 154 and block various types of defects flowing in from the substrate 101. The substrate 101 may consist of, for example, a first polyimide substrate 101a, a substrate insulating film 101b, and a second polyimide substrate 101c. However, it is not limited to this. The active buffer layer 114 and the gate insulating film 116 may be formed of SiOx to prevent hydrogen diffusion in the active layer. However, it is not limited to this.

At least one of such a multi-buffer layer 112, an active buffer layer 114, and a substrate 101 can be configured as a multilayer structure. The active buffer layer 114, the multi-buffer layer 112, the gate insulating film 116, and the multilayer insulating film 102 can be formed of an inorganic insulating film having excellent moisture blocking performance. For example, the gate insulating film 116, the active buffer layer 114, the multi-buffer layer 112, and the interlayer insulating film 102 having a multi-layer structure can be formed of any one of SiNx and SiOx.

The plurality of signal lines 106 can be formed of the same metal layer as the metal layer forming the transistor 150 and the storage capacitor Cst. A plurality of signal lines 106 can be provided for the gate insulating film 116 and the multilayer insulating film 102, and a high-resolution panel design and a storage capacitor Cst can be formed.

The multilayer structure interlayer insulating film 102 may include a first interlayer insulating film 102a, a second interlayer insulating film 102b, and a third interlayer insulating film 102c. However, the number of interlayer insulating films 102 is not limited to this, and the number of interlayer insulating films 102 may vary from two layers to four or more layers depending on the panel design.

The plurality of signal lines 106 may have a single-layer or multi-layer structure containing Al, Ag, Cu, Pb, Mo, Ti or an alloy thereof.

The light emitting diode 130 is organic so as to be connected to an anode electrode 132 connected to the drain electrode 158 of the transistor 150, at least one organic light emitting element 134 formed on the anode electrode 132, and a low potential voltage VSS supply line. It includes a cathode electrode 136 formed on the light emitting element 134. Here, the low potential voltage VSS supply line supplies the low potential voltage VSS which is relatively lower than the high potential voltage VDD.

The anode electrode 132 is electrically connected to the drain electrode 158 of the transistor 150 exposed through a pixel contact hole penetrating the overcoat layer 104 located on the transistor 150. Here, the transistor 150 may be a drive transistor TD. The anode electrode 132 of each sub-pixel SP is arranged on the overcoat layer 104 so as to be exposed by the bank-spacer layer 138. The overcoat layer 104 is also referred to as a flattening layer. The bank-spacer layer 138 may refer to a layer configured to perform the function of a bank and / or spacer, and can be formed such that there is a difference in height between the bank and the spacer throughout the halftone exposure process. However, it is not limited to this.

When such an anode electrode 132 is applied to a back-emitting electroluminescent display device, the anode electrode 132 comprises a transparent conductive film such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO). .. Further, when the anode electrode 132 is applied to a front light emitting electroluminescent display device, the anode electrode 132 can have a multilayer structure including a transparent conductive film and an opaque conductive film having high reflection efficiency. The transparent conductive film can be formed of a material having a relatively large work function value such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO), and the opaque conductive film includes Al, Ag, Cu. , Pb, Mo, Ti or alloys thereof and can be formed in a single layer or multi-layer structure. For example, the anode electrode 132 can be formed in a structure in which a transparent conductive film, an opaque conductive film, and a transparent conductive film are sequentially laminated.

The organic light emitting device 134 may be formed by laminating the hole transport layer, the light emitting layer, and the electron transport layer in this order or in the reverse order on the anode electrode 132. The organic light emitting device 134 includes a common layer formed on the front surface of the pixel region AA and a light emitting layer patterned only on the anode electrode 132 for hue representation of the specific sub-pixel SP.

The cathode electrode 136 is formed on the upper surface and the side surface of the organic light emitting element 134 and the bank-spacer layer 138 so as to face the anode electrode 132 with the organic light emitting element 134 interposed therebetween.

The sealing portion 140 blocks the permeation of external moisture and oxygen into the light emitting diode 130, which is vulnerable to external moisture and oxygen. For this purpose, the sealing portion 140 includes a plurality of inorganic sealing layers 142 and 146 and a foreign matter compensating layer 144 arranged between the plurality of inorganic sealing layers 142 and 146, with the inorganic sealing layer 146 being the most important. It should be placed in the upper layer. For example, the sealing portion 140 may be configured to include at least one inorganic sealing layer and at least one foreign matter compensating layer. In the present specification, the structure of the sealing portion 140 in which the foreign matter compensating layer 144 is arranged between the first and second inorganic sealing layers 142 and 146 will be described as an example. However, it is not limited to this.

The first inorganic sealing layer 142 is formed on the cathode electrode 136. Such a first inorganic sealing layer 142 is an inorganic sealing capable of low temperature vapor deposition such as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxide nitride (SiON) or aluminum oxide (Al ₂ O _3). Formed of material. As a result, the first inorganic sealing layer 142 is vapor-deposited in a low-temperature atmosphere, so that the organic light-emitting element 134, which is vulnerable to a high-temperature atmosphere, can be protected during the vapor deposition process of the first inorganic sealing layer 142.

The second inorganic sealing layer 146 is formed so as to cover the upper surface and the side surface of the foreign matter compensating layer 144 and the upper surface of the first inorganic sealing layer 142 exposed by the foreign matter compensating layer 144. As a result, the upper and lower side surfaces of the foreign matter compensating layer 144 are sealed by the first and second inorganic sealing layers 142 and 146, so that external moisture or oxygen permeates the foreign matter compensating layer 144 or is inside the foreign matter compensating layer 144. Minimizes or blocks the penetration of moisture and oxygen into the light emitting diode 130. Such a second inorganic sealing layer 146 is formed of an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxide nitride (SiON) or aluminum oxide (Al ₂ O _3).

The foreign matter compensating layer 144 serves as a buffer that relieves stress between layers due to warping of the electroluminescent display device, and enhances flattening performance. Further, the foreign matter compensating layer 144 is formed thicker than the inorganic sealing layers 142 and 146 so as to prevent cracks from being generated by the foreign matter. The foreign matter compensating layer 144 is formed of an organic insulating material such as acrylic resin, epoxy resin, polyimide, polyethylene or silicone oxycarbon (SiOC).

When the foreign matter compensating layer 144 is formed, the outer dam 128 and the inner dam 108 for limiting the fluidity of the foreign matter compensating layer 144 are formed.

As shown in FIG. 1, at least one external dam 128 is formed so as to completely surround the pixel region AA in which the sub-pixel SP is arranged, or is formed between the pixel region AA and the non-pixel region NA. You may. When the non-pixel region NA in which the plurality of pads 122 are arranged is arranged on one side of the substrate 101, the external dam 128 can be arranged only on one side of the substrate 101. When the non-pixel region NA in which the plurality of pads 122 are arranged is arranged on both sides of the substrate 101, the external dam 128 can be arranged on both sides of the substrate 101. When a plurality of external dams 128 are arranged, the external dams 128 are separated from each other at predetermined intervals, and when the foreign matter compensation layer 144 floods one external dam 128, the other external dams 128 arranged apart from each other The flooded foreign matter compensation layer 144 can be added and closed. Due to the various structures of the external dam 128 described above, it is possible to prevent the foreign matter compensation layer 144 from diffusing into the non-pixel region NA.

At least one internal dam 108 is arranged so as to completely surround the substrate hole 120 arranged in the hole region HA. When a plurality of internal dams 108 are arranged, the internal dams 108 are arranged at predetermined intervals. Such an inner dam 108 can be formed in a single-layer or multi-layer structure 108a, 108b in the same manner as the outer dam 128. For example, since each of the inner dam 108 and the outer dam 128 is simultaneously formed of the same material as at least one of the overcoat layer 104 and the bank-spacer layer 138, the mask addition process and cost increase can be prevented. Such an internal dam 108 can prevent the foreign matter compensating layer 144, which can be used as a moisture permeation path, from diffusing into the hole region HA. Here, the organic light emitting element 134 is arranged on the internal dam 108. This is because the organic light emitting element 134 is vapor-deposited on the front surface of the pixel region AA when the pixel region AA is formed. Unlike this, the organic light emitting element 134 is removed from the upper surface of the external dam 128.

Since the organic light emitting element 134 is extremely vulnerable to moisture permeation, the substrate hole 120 serves as a moisture permeation path from the hole region HA to the pixel region AA and transfers moisture to the light emitting diode 130. Defects may occur.

The disconnection region DA is arranged between the hall region HA and the pixel region AA. In other words, the discontinuity region DA is configured to surround the outside of the hall region HA. An internal dam 108 and at least one disconnection structure 110 can be arranged in the interruption region DA.

The disconnection structure 110 is arranged between the internal dam 108 and the substrate hole 120. In other words, the discontinuity structure 110 is configured to surround the outside of the hall region HA. The discontinuity structure 110 is configured to include an eaves 110a and a trench 110b.

The eaves portion 110a can be formed together when the overcoat layer 104 and the bank-spacer layer 138 are formed of the same material as at least one of the overcoat layer 104 and the bank-spacer layer 138. In other words, since the eaves portion 110a can be formed at the same time when the internal dam 108 is formed, there is an effect of preventing the mask addition step and the cost increase. The eaves 110a is configured to have a protruding overhang at the top of the trench 110b. The eaves 110a can be arranged on at least one side surface of the trench 110b. For example, the eaves 110a can be located above the trench 110b adjacent to the hole region HA. For example, the eaves 110a can be arranged above the trench 110b adjacent to the pixel area AA. For example, the eaves 110a can be arranged on both upper sides of the trench 110b adjacent to the pixel area AA and the hole area HA so as to be separated from each other. With reference to FIG. 2, the eaves 110a of the disrupted structure 110 is illustrated in an example arranged on both sides of the trench 110b. However, it is not limited to this. The eaves portion 110a that overlaps with the trench 110b is configured to have a predetermined taper angle θ. For example, the taper angle θ may be 10 ° to 90 °. However, it is not limited to this.

The trench 110b is formed below the eaves 110a. That is, the trench 110b can be formed under the eaves 110a. The trench 110b is formed by etching at least one of a multi-buffer layer 112, an active buffer layer 114, a gate insulating film 116, and an interlayer insulating film 102 having a multilayer structure arranged between the substrate 101 and the overcoat layer 104. Will be done.

The trench 110b is characterized in that it is formed after the formation of the eaves portion 110a, and the trench 110b is characterized in that it is formed before the formation of the organic light emitting element 134. According to the above-described configuration, the organic light emitting element 134 and / or the cathode electrode 136 has an effect of being disconnected by the eaves 110a and the trench 110b.

Specifically, when the organic light emitting element 134 and the cathode electrode 136 are formed by the disconnection structure 110 including the eaves portion 110a having an overhang and the trench 110b, the organic light emitting element 134 and the cathode electrode 136 are formed by the disconnection structure 110. Has the effect of being cut off without continuity.

With reference to FIG. 2, the organic light emitting element 134 and the cathode electrode 136 which are cut off are shown inside the trench 110b. This has the effect of blocking or delaying the inflow of moisture from the outside into the pixel region AA by the discontinuity structure 110 even if it permeates along the organic light emitting element 134 arranged in the vicinity of the hall region HA. .. Further, even if static electricity flows in along the cathode electrode 136 arranged in the vicinity of the hall region HA, there is an effect that the discontinuing structure 110 can block the diffusion of static electricity in the pixel region AA.

For example, the widths X1 and X2 of the overhangs of the eaves 110a protruding from the trench 110b are configured to have a predetermined width. The widths X1 and X2 of the overhangs may project from the side surface of the trench 110b by about 0.1 μm or more. If the widths X1 and X2 of the overhang of the eaves 110a project to less than 0.1 μm from the side surface of the trench 110b, the organic light emitting element 134 and the cathode electrode 136 are completely formed when the organic light emitting element 134 and the cathode electrode 136 are formed. It may not be interrupted. As a result, problems such as moisture permeation or static electricity generation may occur in the pixel region AA along the organic light emitting element 134.

For example, the separation distance X3 between the inner eaves and the outer eaves may be 0.1 μm or more. If the separation distance X3 between the inner eaves and the outer eaves is less than 0.1 μm, the organic light emitting element 134 and the cathode electrode 136 may not be completely disconnected when the organic light emitting element 134 and the cathode electrode 136 are formed. .. As a result, problems such as moisture permeation or static electricity generation may occur in the pixel region AA along the organic light emitting element 134.

For example, the depth Y of the trench 110b is configured to have a predetermined depth. The depth of the trench 110b may be at least 0.1 μm or more. If the depth Y of the trench 110b is less than 0.1 μm, the organic light emitting element 134 and the cathode electrode 136 may not be completely disconnected. As a result, problems such as moisture permeation or static electricity generation may occur in the pixel region AA along the organic light emitting element 134.

For example, the width of the trench 110b may have the sum of the overhang widths X1 and X2 of the eaves 110a and the separation distance X3 between the eaves 110a. However, it is not limited to this.

For example, the width X1 of the overhang of the outer eaves and the width X2 of the overhangs of the inner eaves may be the same or different from each other.

In addition, since the presence or absence of disconnection of the organic light emitting element 134 is more important than the presence or absence of disconnection of the cathode electrode 136, the disconnection structure 110 must be designed so that the presence or absence of disconnection of the organic light emitting element 134 is prioritized.

The inside of the trench 110b is configured to be sealed by an inorganic sealing layer. Referring to FIG. 2, a disconnected organic light emitting element 134 and a disconnected cathode electrode 136 are arranged inside the trench 110b. The remaining area inside the trench 110b is sealed by the first inorganic sealing layer 142, which has the effect of blocking moisture permeation.

The substrate hole 120 is formed so as to penetrate the substrate 101 and a plurality of inorganic insulating films on the substrate 101. For example, the substrate hole 120 penetrates the hole region HA and the inorganic insulating films 112, 114, 116, 102, the organic light emitting element 134, the cathode electrode 136, and the inorganic sealing layer 142, 146 in the peripheral region, and is the upper portion of the substrate 101. It is formed so as to expose the surface.

The display device 200 according to another embodiment of the present specification will be described with reference to FIG.

The display device 200 according to another embodiment of the present specification is substantially the same as the display device 100 according to one embodiment of the present specification except for the disconnection structure 210. , The duplicate description is omitted for convenience of explanation.

The display device 200 according to another embodiment of the present specification is configured to include a discontinuity structure 210. The disconnection structure 210 is configured to include an eaves 210a and a trench 210b.

The eaves 210a may be located on one side of the trench 210b. In FIG. 3, the eaves 210a is exemplified outside the trench 210b, but it is also possible to arrange the eaves 210a inside the trench 210b. The inside of the trench 210b is configured to be sealed by an inorganic sealing layer. Inside the trench 210b, a disconnected organic light emitting element 134 and a disconnected cathode electrode 136 are arranged. If the separation distance X3 of the disconnection structure 210 according to another embodiment of the present specification is the same as the separation distance X3 of the disconnection structure 110 according to one embodiment of the present specification, the eaves portion 210a is placed on one side. Since only can be formed, there is an effect that the width of the cutting structure 210 can be relatively further reduced. Therefore, there is an effect of reducing the width of the discontinuity region DA.

The display device 300 according to still another embodiment of the present specification will be described with reference to FIG.

The display device 300 according to the other embodiment of the present specification is substantially the same as the display device 100 according to the other embodiment of the present specification except for the disconnection structure 310. , The duplicate description is omitted for convenience of explanation.

The display device 300 according to still another embodiment of the present specification is configured to include a discontinuity structure 310. The disconnection structure 310 is configured to include an eaves 310a and a trench 310b.

The trench 310b can be formed by etching the multi-buffer layer 112, the active buffer layer 114, the gate insulating film 116, and the multilayer insulating film 102 arranged between the substrate 101 and the overcoat layer 104. That is, the trench 310b of the cutting structure 310 can be formed by etching so as to expose the upper surface of the substrate 101. According to the above-described configuration, there is an advantage that the depth Y of the trench 310b can be increased. Specifically, the deeper the depth Y of the trench 310b according to the other embodiment of the present specification, the more the organic light emitting element 134 and the cathode electrode 136 are disconnected from the trench 110b according to the other embodiment of the present specification. Has the effect of facilitating. Further, the multi-buffer layer 112, the active buffer layer 114, the gate insulating film 116, and the interlayer insulating film 102 having a multilayer structure are inorganic insulating films, and have the effect of forming the trench 310b in the same etching process. In addition, a further step is required for etching the second polyimide substrate 101c. However, from the multilayer insulating film 102 to the multi-buffer layer 112, there is an effect of forming the trench 310b in a single etching step.

The display device 400 according to still another embodiment of the present specification will be described with reference to FIG.

The display device 400 according to the other embodiment of the present specification is substantially the same as the display device 100 according to the other embodiment of the present specification except for the disconnection structure 410. , The duplicate description is omitted for convenience of explanation.

The display device 400 according to still another embodiment of the present specification is configured to include a discontinuity structure 410. The discontinuity structure 410 is configured to include an eaves 410a and a trench 410b. The discontinuity structure 410 is configured to further include an etch stopper 410c.

The etch stopper 410c may be formed of the same metal layer as one of the plurality of signal lines 106.

The etch stopper 410c can be selected according to the required trench 410b depth Y. Referring to FIG. 5, a plurality of signal lines 106 are arranged on a plurality of inorganic insulating films. Here, the signal line arranged on the upper side can be used as an etch stopper to adjust the depth Y of the trench 410b, or the signal line arranged on the lower side can be used as an etch stopper. .. The etch stopper 410c is characterized in that it is formed along the eaves 410a and the trench 410b. That is, when the shapes of the eaves 410a and the trench 410b are circular with respect to the plane, the etch stopper 410c is also formed in a circular shape. The width of the cross section of the etch stopper 410c is formed wider than the width of the cross section of the trench 410b. For example, the width of the cross section of the etch stopper 410c is formed to be wider than the sum of the widths X1 and X2 of the overhangs of the eaves and the separation distance X3 of the eaves 410a. Further, the etch stopper 410c is formed so as to project further outward from the trench 410b. According to the above-described configuration, the etch stopper 410c can easily adjust the depth Y of the trench 410b during the manufacturing process, and has the effect that no additional process is required.

The display device 500 according to still another embodiment of the present specification will be described with reference to FIG.

The display device 500 according to another embodiment of the present specification is substantially the same as the display device 100 according to one embodiment of the present specification except for the disconnection structure 510. Omits duplicate explanations solely for convenience of explanation.

The display device 500 according to still another embodiment of the present specification is configured to include a discontinuous structure 510. The discontinuity structure 510 is configured to include an eaves 510a and a trench 510b.

The eaves 510a is configured to have at least two overhang taper angles. Referring to FIG. 6, the eaves 510a corresponding to the trench 510b is configured to have a first taper angle θ1 and a second taper angle θ2.

The first taper angle θ1 is smaller than the second taper angle θ2. The second taper angle θ2 may be 90 ° or less. According to the above-described configuration, since the second taper angle θ2 of the eaves 510a is further larger than the first taper angle θ1, there is an effect that the thickness of the end of the eaves 510a is further increased. Therefore, when the organic light emitting element 134 and the cathode electrode 136 are formed on the overhang of the eaves 510a, the disconnection of the organic light emitting element 134 and the cathode electrode 136 can be further facilitated, and the end of the overhang becomes thick. This has the effect of making the structure of the eaves 510a even stronger.

The display device 600 according to still another embodiment of the present specification will be described with reference to FIG. 7.

Since the display device 600 according to the other embodiment of the present specification is substantially the same except for the disconnection structure 610 when compared with the display device 500 according to the other embodiment of the present specification. In the following, duplicate explanations will be omitted for convenience of explanation.

The display device 600 according to still another embodiment of the present specification is configured to include a discontinuity structure 610. The discontinuity structure 610 is configured to include an eaves portion 610a and a trench 610b.

The eaves 610a is configured to have at least three overhang taper angles. Referring to FIG. 7, the eaves portion 610a corresponding to the trench 610b is configured to have a first taper angle θ1, a second taper angle θ2, and a third taper angle θ3.

The first taper angle θ1 is smaller than the third taper angle θ3. The third taper angle θ3 may be 90 ° or less. The second taper angle θ2 is smaller than the first taper angle θ1 and the third taper angle θ3. According to the above-described configuration, the third taper angle θ3 of the eaves 610a is further larger than the first taper angle θ1, so that the end of the eaves 610a is further thickened. Further, since the second taper angle θ2 is smaller than the first taper angle θ1 and the third taper angle θ3, there is an effect that the end of the overhang is projected while being kept relatively thick. Therefore, when the organic light emitting element 134 and the cathode electrode 136 are formed on the overhang of the eaves portion 610a, the disconnection of the organic light emitting element 134 and the cathode electrode 136 can be further facilitated, and as the end of the overhang becomes thicker. It has the effect of making the structure of the eaves 610a even stronger.

The display device 700 according to still another embodiment of the present specification will be described with reference to FIG.

The display device 700 according to another embodiment of the present specification is substantially the same as the display device 100 according to one embodiment of the present specification except for the number of discontinuous structures 710. In the above, duplicate explanations are omitted simply for convenience of explanation.

The display device 700 according to still another embodiment of the present specification is configured to include a plurality of discontinuous structures 710. The number of the plurality of discontinuous structures 710 is at least two or more, and may be, for example, 2 to 20. A plurality of dissociated structures 710 are arranged apart from each other, and the outer dissociated structure 710 has a shape surrounding the inner dissociated structure 710. According to the above-described configuration, there is an effect of improving the disconnection performance of the organic light emitting element 134. In addition, each of the discontinuity structures 710 can be implemented by selectively combining some of the discontinuity structures of various examples disclosed in the present specification.

In the display device according to various embodiments of the present specification, electronic components including a camera, a speaker, a flashlight light source, a biometric sensor such as a fingerprint sensor, and the like can be arranged in a hall area. The camera module can include a camera lens and a camera drive unit. Cover glasses can be placed on the display devices according to the various embodiments of the present specification. A polarizing plate can be placed under the cover glass. By arranging the camera module in the pixel area, the non-pixel area of the display device can be reduced.

The above description is merely an example of the present specification, and various modifications are made to the extent that the technical idea of the present specification is not deviated by a person having ordinary knowledge in the technical field to which the present specification belongs. Would be possible. Therefore, the examples disclosed herein are not intended to limit the specification. The scope of the present specification should be construed as the scope of the following claims, and all techniques within the equivalent scope should be construed as being included in the scope of the present specification.

Claims (15)

A substrate including a pixel area including a discontinuity area surrounding a hole area,
The organic light emitting element formed in the pixel region and the discontinuity region,
A plurality of inorganic insulating films arranged under the organic light emitting element, and
A discontinuity structure arranged in the discontinuity region and surrounding the hall region,
Including an internal dam located in the disruption region and surrounding the disruption structure,
The cutoff structure includes an eaves formed at the same time as the internal dam and a trench formed by etching the plurality of inorganic insulating films arranged under the eaves.
A display device in which the disconnection structure is configured to have a predetermined overhang and a predetermined depth by the eaves portion and the trench structure. The display device according to claim 1, wherein the predetermined overhang of the discontinuous structure is 0.1 μm or more. The display device according to claim 1, wherein the predetermined depth of the cutoff structure is 0.1 μm or more. The display device according to claim 1, wherein the organic light emitting element is cut off in the trench by the predetermined overhang of the cutoff structure and the predetermined depth. The plurality of inorganic insulating films include at least one of a multilayer structure interlayer insulating film, a gate insulating film, a multi-buffer layer, and an active buffer layer, and the trench eats at least a part of the plurality of inorganic insulating films. The display device according to claim 1, which is formed by engraving. The display device according to claim 5, wherein the plurality of inorganic insulating films include one of SiNx and SiOx. The display device according to claim 1, wherein the organic light emitting element is arranged on the internal dam. The display device according to claim 1, wherein the eaves portion is configured to have a first taper angle. The display device according to claim 8, wherein the eaves portion is configured to have a second taper angle. The display device according to claim 1, further comprising a camera module arranged in the hall area. The display device according to claim 1, further comprising an external dam formed so as to surround the pixel region between the pixel region and the non-pixel region. The display device according to claim 11, wherein the organic light emitting element is removed from the upper surface of the external dam. The display device according to claim 1, wherein the cutoff structure further includes an etch stopper arranged on the plurality of inorganic insulating films inside the trench. The display device according to claim 13, wherein the etch stopper is formed of the same metal layer as one of a plurality of signal lines. The display device according to claim 13, wherein the etch stopper has a cross-sectional width wider than the cross-sectional width of the trench.

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