JP2021077560A - Electron emitting element - Google Patents

Electron emitting element Download PDF

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JP2021077560A
JP2021077560A JP2019204811A JP2019204811A JP2021077560A JP 2021077560 A JP2021077560 A JP 2021077560A JP 2019204811 A JP2019204811 A JP 2019204811A JP 2019204811 A JP2019204811 A JP 2019204811A JP 2021077560 A JP2021077560 A JP 2021077560A
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emitting element
electron emitting
element according
light
group
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JP7234099B2 (en
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重哉 木村
Shigeya Kimura
重哉 木村
学史 吉田
Hisashi Yoshida
学史 吉田
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Toshiba Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters

Abstract

To provide an electron emitting element capable of achieving improvement in efficiency.SOLUTION: According to an embodiment, an electron emitting element includes a first member and a second member. The first member includes an n-type semiconductor member. The second member includes a p-type diamond member. The diamond member includes at least one selected from a group consisting of diamond and graphite. The semiconductor member includes at least one selected from a group consisting of first to third materials. The first material includes at least one of B, Al, In and Ga, and nitrogen. The second material includes at least one of ZnO and ZnMgO. The third material includes at least one of BaTiO3, PbTiO3, Pb(Zrx, Ti1-x)O3, KNbO3, LiNbO3, LiTaO3, NaxWO3, Zn2O3, Ba2 NaNb5O5, Pb2KNb5O15 and Li2B4O7.SELECTED DRAWING: Figure 1

Description

本発明の実施形態は、電子放出素子に関する。 Embodiments of the present invention relate to electron emitting elements.

例えば、入射した光に基づいて電子を放出する電子放出素子がある。電子放出素子において、効率の向上が望まれる。 For example, there is an electron emitting element that emits an electron based on the incident light. It is desired to improve the efficiency of the electron emitting element.

特開２００７−８０６９７号公報JP-A-2007-80697

本発明の実施形態は、効率を向上できる電子放出素子を提供する。 An embodiment of the present invention provides an electron emitting element capable of improving efficiency.

本発明の実施形態によれば、電子放出素子は、第１部材及び第２部材を含む。前記第１部材は、ｎ形の半導体部材を含む。前記第２部材は、ｐ形のダイヤモンド部材を含む。前記ダイヤモンド部材は、ダイヤモンド及びグラファイトよりなる群から選択された少なくとも１つを含む。前記半導体部材は、第１材料、第２材料及び第３材料よりなる群から選択された少なくとも１つを含む。前記第１材料は、Ｂ、Ａｌ、Ｉｎ及びＧａからなる群から選択された少なくとも１つと、窒素と、を含む。前記第２材料は、ＺｎＯ及びＺｎＭｇＯからなる群から選択された少なくとも１つを含む。前記第３材料は、ＢａＴｉＯ３、ＰｂＴｉＯ３、Ｐｂ（Ｚｒｘ，Ｔｉ１−ｘ）Ｏ３、ＫＮｂＯ３、ＬｉＮｂＯ３、ＬｉＴａＯ３、ＮａｘＷＯ３、Ｚｎ２Ｏ３、Ｂａ２ＮａＮｂ５Ｏ５、Ｐｂ２ＫＮｂ５Ｏ１５及びＬｉ２Ｂ４Ｏ７からなる群から選択された少なくとも１つを含む。 According to an embodiment of the present invention, the electron emitting element includes a first member and a second member. The first member includes an n-type semiconductor member. The second member includes a p-shaped diamond member. The diamond member comprises at least one selected from the group consisting of diamond and graphite. The semiconductor member includes at least one selected from the group consisting of a first material, a second material and a third material. The first material comprises at least one selected from the group consisting of B, Al, In and Ga, and nitrogen. The second material comprises at least one selected from the group consisting of ZnO and ZnMgO. The third material is BaTIO 3 , PbTIO 3 , Pb (Zr x , Ti 1-x ) O 3 , KNbO 3 , LiNbO 3 , LiTaO 3 , Na x WO 3 , Zn 2 O 3 , Ba 2 NaNb 5 O 5 , Pb 2 KNb 5 O 15 and Li 2 B 4 O 7 comprising at least one selected from the group.

図１は、第１実施形態に係る電子放出素子を例示する模式的断面図である。FIG. 1 is a schematic cross-sectional view illustrating the electron emitting element according to the first embodiment. 図２は、第１実施形態に係る電子放出素子を例示する模式図である。FIG. 2 is a schematic diagram illustrating an electron emitting element according to the first embodiment. 図３は、第１実施形態に係る電子放出素子を例示する模式的断面図である。FIG. 3 is a schematic cross-sectional view illustrating the electron emitting element according to the first embodiment. 図４は、第１実施形態に係る電子放出素子を例示する模式的断面図である。FIG. 4 is a schematic cross-sectional view illustrating the electron emitting element according to the first embodiment. 図５は、第１実施形態に係る電子放出素子を例示する模式的断面図である。FIG. 5 is a schematic cross-sectional view illustrating the electron emitting element according to the first embodiment. 図６は、第１実施形態に係る電子放出素子を例示する模式的断面図である。FIG. 6 is a schematic cross-sectional view illustrating the electron emitting element according to the first embodiment. 図７は、第１実施形態に係る電子放出素子を例示する模式的断面図である。FIG. 7 is a schematic cross-sectional view illustrating the electron emitting element according to the first embodiment. 図８は、第１実施形態に係る電子放出素子を例示する模式的断面図である。FIG. 8 is a schematic cross-sectional view illustrating the electron emitting element according to the first embodiment. 図９は、第１実施形態に係る電子放出素子を例示する模式的断面図である。FIG. 9 is a schematic cross-sectional view illustrating the electron emitting element according to the first embodiment. 図１０は、第２実施形態に係る電子放出素子を例示する模式的断面図である。FIG. 10 is a schematic cross-sectional view illustrating the electron emitting element according to the second embodiment. 図１１は、第２実施形態に係る電子放出素子を例示する模式的断面図である。FIG. 11 is a schematic cross-sectional view illustrating the electron emitting element according to the second embodiment. 図１２は、第２実施形態に係る電子放出素子を例示する模式的断面図である。FIG. 12 is a schematic cross-sectional view illustrating the electron emitting element according to the second embodiment. 図１３は、第３実施形態に係る電子放出素子を例示する模式的断面図である。FIG. 13 is a schematic cross-sectional view illustrating the electron emitting element according to the third embodiment.

以下に、本発明の各実施の形態について図面を参照しつつ説明する。
図面は模式的または概念的なものであり、各部分の厚さと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
本願明細書と各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the sizes between the parts, etc. are not always the same as the actual ones. Even if the same part is represented, the dimensions and ratios of each may be represented differently depending on the drawing.
In the present specification and each figure, the same elements as those described above with respect to the above-mentioned figures are designated by the same reference numerals, and detailed description thereof will be omitted as appropriate.

（第１実施形態）
図１は、第１実施形態に係る電子放出素子を例示する模式的断面図である。
図１に示すように、実施形態に係る電子放出素子１１０は、第１部材１０及び第２部材２０を含む。第１部材１０及び第２部材２０は、例えば、容器１７の中に設けられる。容器１７の中の空間は、例えば、減圧状態に維持可能である。容器１７の中の空間は、例えば、ヘリウム、ネオン、アルゴン、クリプトン、キセノン及びラドンよりなる群から選択された少なくとも１つを含むガスを含んでも良い。電子放出素子１１０は、容器１７を含んでも良い。 (First Embodiment)
FIG. 1 is a schematic cross-sectional view illustrating the electron emitting element according to the first embodiment.
As shown in FIG. 1, the electron emitting element 110 according to the embodiment includes a first member 10 and a second member 20. The first member 10 and the second member 20 are provided in, for example, the container 17. The space inside the container 17 can be maintained in a reduced pressure state, for example. The space in the container 17 may contain, for example, a gas containing at least one selected from the group consisting of helium, neon, argon, krypton, xenon and radon. The electron emitting element 110 may include a container 17.

第１部材１０は、ｎ形の半導体部材１５を含む。第２部材２０は、ｐ形のダイヤモンド部材２５を含む。ダイヤモンド部材２５は、ダイヤモンド及びグラファイトよりなる群から選択された少なくとも１つのを含む。例えば、第２部材２０に含まれるダイヤモンド部材２５は、Ｂ及びＡｌよりなる群から選択された少なくとも１つの第１元素を含む。 The first member 10 includes an n-type semiconductor member 15. The second member 20 includes a p-shaped diamond member 25. The diamond member 25 includes at least one selected from the group consisting of diamond and graphite. For example, the diamond member 25 included in the second member 20 contains at least one first element selected from the group consisting of B and Al.

半導体部材１５は、第１材料、第２材料及び第３材料よりなる群から選択された少なくとも１つを含む。第１材料は、Ｂ、Ａｌ、Ｉｎ及びＧａからなる群から選択された少なくとも１つと、窒素と、を含む。例えば、第１材料は、ＡｌＧａＮを含む。第２材料は、ＺｎＯ及びＺｎＭｇＯからなる群から選択された少なくとも１つを含む。第３材料は、ＢａＴｉＯ３、ＰｂＴｉＯ３、Ｐｂ（Ｚｒｘ，Ｔｉ１−ｘ）Ｏ３、ＫＮｂＯ３、ＬｉＮｂＯ３、ＬｉＴａＯ３、ＮａｘＷＯ３、Ｚｎ２Ｏ３、Ｂａ２ＮａＮｂ５Ｏ５、Ｐｂ２ＫＮｂ５Ｏ１５及びＬｉ２Ｂ４Ｏ７からなる群から選択された少なくとも１つを含む。例えば、半導体部材１５は、分極を有する。 The semiconductor member 15 includes at least one selected from the group consisting of a first material, a second material, and a third material. The first material comprises at least one selected from the group consisting of B, Al, In and Ga, and nitrogen. For example, the first material contains AlGaN. The second material comprises at least one selected from the group consisting of ZnO and ZnMgO. The third material is BaTIO 3 , PbTIO 3 , Pb (Zr x , Ti 1-x ) O 3 , KNbO 3 , LiNbO 3 , LiTaO 3 , Na x WO 3 , Zn 2 O 3 , Ba 2 NaNb 5 O 5 , Includes at least one selected from the group consisting of Pb 2 KNb 5 O 15 and Li 2 B 4 O 7. For example, the semiconductor member 15 has polarization.

例えば、電子放出素子１１０に、光６１が入射する。電子放出素子１１０は、入射した光６１に応じて、電子６２を放出する。例えば、光６１のピーク波長は、３００ｎｍ以下である。例えば、光６１のピーク波長は、２１０ｎｍ以下でも良い。 For example, the light 61 is incident on the electron emitting element 110. The electron emitting element 110 emits electrons 62 according to the incident light 61. For example, the peak wavelength of light 61 is 300 nm or less. For example, the peak wavelength of the light 61 may be 210 nm or less.

例えば、電子６２は、第１部材１０の表面から放出される。例えば、第１部材１０は、第１面１１及び第２面１２を含む。第２面１２は、第２部材２０と第１面１１との間にある。例えば、電子６２は、第１面１１から放出される。 For example, the electron 62 is emitted from the surface of the first member 10. For example, the first member 10 includes a first surface 11 and a second surface 12. The second surface 12 is between the second member 20 and the first surface 11. For example, the electron 62 is emitted from the first surface 11.

例えば、第２部材２０は、第３面２３及び第４面２４を含む。第３面２３は、第４面２４と第１部材１０との間にある。図１の例では、光６１は、第４面２４から第２部材２０に入射する。その光６１に応じた電子６２が第１面１１から放出される。 For example, the second member 20 includes a third surface 23 and a fourth surface 24. The third surface 23 is between the fourth surface 24 and the first member 10. In the example of FIG. 1, the light 61 is incident on the second member 20 from the fourth surface 24. Electrons 62 corresponding to the light 61 are emitted from the first surface 11.

実施形態においては、例えば、ワイドバンドギャップのｐ形のダイヤモンド部材２５が用いられる。入射した光６１により生じた移動可能な電子が、第１部材１０の表面から、外部領域１８に効率よく放出できる。外部領域１８は、第１部材１０の外部であり、容器１７の中の領域である。実施形態によれば、効率を向上できる電子放出素子が提供できる。電子放出素子１１０は、例えば、フォトカソードである。 In the embodiment, for example, a wide bandgap p-shaped diamond member 25 is used. Movable electrons generated by the incident light 61 can be efficiently emitted from the surface of the first member 10 to the outer region 18. The outer region 18 is the region outside the first member 10 and inside the container 17. According to the embodiment, an electron emitting element capable of improving efficiency can be provided. The electron emitting element 110 is, for example, a photocathode.

例えば、第１参考例のフォトカソードにおいて、ダイヤモンドの表面が水素で終端される。この表面からから電子が放出される。第１参考例においては、表面の水素が離脱する可能性がある。このため、電子を安定して放出することが困難である。第１参考例の寿命は短い。 For example, in the photocathode of the first reference example, the surface of diamond is terminated with hydrogen. Electrons are emitted from this surface. In the first reference example, hydrogen on the surface may be released. Therefore, it is difficult to stably emit electrons. The life of the first reference example is short.

例えば、第２参考例のフォトカソードにおいて、例えば、Ｃｓを含むＧａＮ層などが用いられる。第２参考例においては、Ｃｓが離脱する可能性がある。このため、電子を安定して放出することが困難である。 For example, in the photocathode of the second reference example, for example, a GaN layer containing Cs is used. In the second reference example, Cs may be withdrawn. Therefore, it is difficult to stably emit electrons.

例えば、第３参考例のフォトカソードにおいて、例えば、ｐ形のＡｌＧａＮ層と、ｎ形のＧａＮ層と、が組み合わされる。Ａｌ組成比が高いＡｌＧａＮにおいて、ｐ形の不純物（例えばＭｇなど）を高濃度で導入することは、実用的に困難である。第３参考例の構造は、製造が困難である。 For example, in the photocathode of the third reference example, for example, a p-type AlGaN layer and an n-type GaN layer are combined. In AlGaN having a high Al composition ratio, it is practically difficult to introduce p-type impurities (for example, Mg) at a high concentration. The structure of the third reference example is difficult to manufacture.

これに対して、実施形態においては、例えば、ｎ形のＡｌＧａＮなどの半導体部材１５と、ｐ形のダイヤモンド部材２５と、が用いられる。水素終端またはＣｓなどを含まないため、安定した特性が得られる。実施形態に係る電子放出素子においては、寿命が長い。ｐ形のＡｌＧａＮ層などを用いないため、製造が容易である。ダイヤモンド部材２５は、ｐ形不純物の第１元素を高い濃度で含むことができる。 On the other hand, in the embodiment, for example, a semiconductor member 15 such as an n-type AlGaN and a p-type diamond member 25 are used. Since it does not contain hydrogen termination or Cs, stable characteristics can be obtained. The electron emitting element according to the embodiment has a long life. Since it does not use a p-type AlGaN layer or the like, it is easy to manufacture. The diamond member 25 can contain the first element of the p-type impurity at a high concentration.

実施形態においては、例えば、半導体部材１５と、ダイヤモンド部材２５と、の間のバンドエネルギーの差を大きくすることができる。例えば、半導体部材１５のエネルギーを外部領域１８のエネルギーに近づける、または、半導体部材１５のエネルギーを外部領域１８のエネルギーよりも高くすることができる。これにより、半導体部材１５から外部領域１８へ、高い効率で電子を放出できる。 In the embodiment, for example, the difference in band energy between the semiconductor member 15 and the diamond member 25 can be increased. For example, the energy of the semiconductor member 15 can be brought closer to the energy of the outer region 18, or the energy of the semiconductor member 15 can be made higher than the energy of the outer region 18. As a result, electrons can be emitted from the semiconductor member 15 to the external region 18 with high efficiency.

図１に示すように、第２部材２０から第１部材１０への方向を第１方向（Ｚ軸方向）とする。第１方向に沿う第１部材１０の厚さｔ１は、例えば、１０ｎｍ以下である。このような厚さにより、高い効率で、電子６２が放出される。後述するように、第１部材１０は島状でも良い。 As shown in FIG. 1, the direction from the second member 20 to the first member 10 is defined as the first direction (Z-axis direction). The thickness t1 of the first member 10 along the first direction is, for example, 10 nm or less. Due to such thickness, electrons 62 are emitted with high efficiency. As will be described later, the first member 10 may have an island shape.

第１方向（Ｚ軸方向）に沿う第２部材２０の厚さｔ２は、例えば、１０ｎｍ以上１ｍｍ以下である。後述するように、基体により第２部材２０が支持される場合は、第２部材２０の厚さｔ２は、３０ｎｍ以下でも良い。 The thickness t2 of the second member 20 along the first direction (Z-axis direction) is, for example, 10 nm or more and 1 mm or less. As will be described later, when the second member 20 is supported by the substrate, the thickness t2 of the second member 20 may be 30 nm or less.

図２は、第１実施形態に係る電子放出素子を例示する模式図である。
図２は、電子放出素子１１０のエネルギーバンドのプロファイルを例示している。図２の横軸は、Ｚ軸方向である。縦軸は、エネルギーＥｇである。図２には、価電子帯のエネルギーＥｖと、伝導帯のエネルギーＥｃと、が示されている。図２に示すように、第２部材２０における、エネルギーＥｖ及びエネルギーＥｃは、第１部材１０と第２部材２０との間の界面の近傍で大きく曲がる。光６１が入射したときに、電子６２は、第２部材２０から第１部材１０への向きに効率良く移動できる。例えば、電子６２は、外部領域１８のエネルギーレベルＶａｃを越えて、第１部材１０から外部領域１８に放出される。ホール６３は、第１部材１０から第２部材２０への向きに移動する。実施形態においては、高い効率で電子を放出できる。 FIG. 2 is a schematic diagram illustrating an electron emitting element according to the first embodiment.
FIG. 2 illustrates the profile of the energy band of the electron emitting element 110. The horizontal axis of FIG. 2 is the Z-axis direction. The vertical axis is energy Eg. FIG. 2 shows the energy Ev in the valence band and the energy Ec in the conduction band. As shown in FIG. 2, the energy Ev and the energy Ec in the second member 20 bend largely in the vicinity of the interface between the first member 10 and the second member 20. When the light 61 is incident, the electrons 62 can efficiently move in the direction from the second member 20 to the first member 10. For example, the electrons 62 are emitted from the first member 10 into the outer region 18 beyond the energy level Vac of the outer region 18. The hole 63 moves in the direction from the first member 10 to the second member 20. In the embodiment, electrons can be emitted with high efficiency.

実施形態において、第１部材１０は、多結晶を含んでも良い。例えば、半導体部材１５は、第１材料、第２材料及び第３材料よりなる群から選択された少なくとも１つの多結晶を含んでも良い。例えば、半導体部材１５の製造が容易である。半導体部材１５及び第１部材１０は、例えば、ＭＯＣＶＤ（Metal Organic Chemical Vapor Deposition）、ＭＢＥ（Molecular Beam Eepitaxy）、スパッタ、ＣＶＤ（Chemical Vapor Deposition）、ＰＬＤ（Physical Vapor Deposition)、または、ＡＬＤ（Atomic layer deposition）などの方法により形成されても良い。 In the embodiment, the first member 10 may include polycrystals. For example, the semiconductor member 15 may include at least one polycrystal selected from the group consisting of a first material, a second material, and a third material. For example, the semiconductor member 15 can be easily manufactured. The semiconductor member 15 and the first member 10 are, for example, MOCVD (Metal Organic Chemical Vapor Deposition), MBE (Molecular Beam Eepitaxy), sputtering, CVD (Chemical Vapor Deposition), PLD (Physical Vapor Deposition), or ALD (Atomic layer). It may be formed by a method such as deposition).

実施形態において、第２部材２０は、ダイヤモンドの多結晶を含んでも良い。第２部材２０は、グラファイトを含んでも良い。これにより、第２部材２０の製造が容易になる。 In an embodiment, the second member 20 may include a polycrystal of diamond. The second member 20 may contain graphite. This facilitates the manufacture of the second member 20.

電子放出素子１１０においては、第２部材２０は、第１部材１０と接する。後述するように、第２部材２０と第１部材１０との間に、別の部材が設けられても良い。 In the electron emitting element 110, the second member 20 is in contact with the first member 10. As will be described later, another member may be provided between the second member 20 and the first member 10.

実施形態において、半導体部材１５が上記の第１材料（ＡｌＧａＮなど）を含む場合、半導体部材１５におけるｎ形の不純物の濃度は、例えば、１×１０１６／ｃｍ３以上５×１０１９／ｃｍ３以下である。このような濃度において、特に高い効率での電子の放出が得られる。 In the embodiment, when the semiconductor member 15 contains the above-mentioned first material (AlGaN or the like), the concentration of the n-type impurity in the semiconductor member 15 is, for example, 1 × 10 16 / cm 3 or more and 5 × 10 19 / cm 3 It is as follows. At such concentrations, electron emission is obtained with particularly high efficiency.

実施形態において、半導体部材１５は、上記の第１材料（ＡｌＧａＮ）を含むことが好ましい。これにより、例えば、大きな分極が得られる。半導体部材１５が上記の第１材料を含むことで、例えば、高いｎ形キャリア濃度が得られる。高い効率が得やすい。 In the embodiment, the semiconductor member 15 preferably contains the above-mentioned first material (AlGaN). This gives, for example, a large polarization. When the semiconductor member 15 contains the above-mentioned first material, for example, a high n-type carrier concentration can be obtained. High efficiency is easy to obtain.

実施形態において、半導体部材１５は、上記の第２材料（ＺｎＯ及びＺｎＭｇＯからなる群から選択された少なくとも１つ）を含むことが好ましい。これにより、例えば、大きな分極が得られる。半導体部材１５が上記の第２材料を含むことで、例えば、高いｎ形キャリア濃度が得られる。高い効率が得やすい。 In the embodiment, the semiconductor member 15 preferably contains the above-mentioned second material (at least one selected from the group consisting of ZnO and ZnMgO). This gives, for example, a large polarization. When the semiconductor member 15 contains the above-mentioned second material, for example, a high n-type carrier concentration can be obtained. High efficiency is easy to obtain.

図３は、第１実施形態に係る電子放出素子を例示する模式的断面図である。
図３に示すように、電子放出素子１１０において、光６１が第１面１１から第２部材２０に入射しても良い。この場合も、光６１に応じた電子６２が第１面１１から放出される。図３においては、容器１７が省略されている。 FIG. 3 is a schematic cross-sectional view illustrating the electron emitting element according to the first embodiment.
As shown in FIG. 3, in the electron emitting element 110, the light 61 may be incident on the second member 20 from the first surface 11. Also in this case, the electrons 62 corresponding to the light 61 are emitted from the first surface 11. In FIG. 3, the container 17 is omitted.

図４は、第１実施形態に係る電子放出素子を例示する模式的断面図である。
図４に示すように、実施形態に係る電子放出素子１１１において、半導体部材１５は、Ａｌ及びＧａからなる群から選択された少なくとも１つと、窒素と、を含む。半導体部材１５は、例えば、ＡｌＧａＮまたはＡｌＮを含む。 FIG. 4 is a schematic cross-sectional view illustrating the electron emitting element according to the first embodiment.
As shown in FIG. 4, in the electron emitting element 111 according to the embodiment, the semiconductor member 15 includes at least one selected from the group consisting of Al and Ga, and nitrogen. The semiconductor member 15 includes, for example, AlGaN or AlN.

半導体部材１５は、第１領域１５ａ及び第２領域１５ｂを含む。第２領域１５ｂは、第２部材２０と第１領域１５ａとの間にある。第２領域１５ｂにおけるＡｌの組成比は、第１領域１５ａにおけるＡｌの組成比よりも高い。例えば、第１領域１５ａは、ｎ形のＡｌＧａＮである。例えば、第２領域１５ｂは、ｎ形のＡｌＮである。第１領域１５ａと第２領域１５ｂとの間の境界は、明確でも良く、不明確でも良い。 The semiconductor member 15 includes a first region 15a and a second region 15b. The second region 15b is between the second member 20 and the first region 15a. The composition ratio of Al in the second region 15b is higher than the composition ratio of Al in the first region 15a. For example, the first region 15a is an n-type AlGaN. For example, the second region 15b is an n-type AlN. The boundary between the first region 15a and the second region 15b may be clear or unclear.

図５は、第１実施形態に係る電子放出素子を例示する模式的断面図である。
図５に示すように、実施形態に係る電子放出素子１１２において、半導体部材１５は、Ａｌ及びＧａからなる群から選択された少なくとも１つと、窒素と、を含む。半導体部材１５は、第１領域１５ａ及び第２領域１５ｂを含む。半導体部材１５におけるＡｌ組成比が、段階的または連続的に、第２面１２から第１面１１への向きに低下しても良い。 FIG. 5 is a schematic cross-sectional view illustrating the electron emitting element according to the first embodiment.
As shown in FIG. 5, in the electron emitting element 112 according to the embodiment, the semiconductor member 15 includes at least one selected from the group consisting of Al and Ga, and nitrogen. The semiconductor member 15 includes a first region 15a and a second region 15b. The Al composition ratio in the semiconductor member 15 may gradually or continuously decrease in the direction from the second surface 12 to the first surface 11.

電子放出素子１１１及び１１２において、例えば、半導体部材１５とダイヤモンド部材２５との間に形成される空乏領域を低減することができる。 In the electron emitting elements 111 and 112, for example, the depletion region formed between the semiconductor member 15 and the diamond member 25 can be reduced.

図６は、第１実施形態に係る電子放出素子を例示する模式的断面図である。
図６に示すように、実施形態に係る電子放出素子１１３は、第１部材１０及び第２部材２０に加えて、基体５０を含む。第２部材２０は、基体５０と第１部材１０との間に設けられる。基体５０は、例えば、基板である。 FIG. 6 is a schematic cross-sectional view illustrating the electron emitting element according to the first embodiment.
As shown in FIG. 6, the electron emitting element 113 according to the embodiment includes a substrate 50 in addition to the first member 10 and the second member 20. The second member 20 is provided between the substrate 50 and the first member 10. The substrate 50 is, for example, a substrate.

基体５０の厚さ（Ｚ軸方向に沿う長さ）は、例えば、５ｎｍ以上１０００μｍ以下である。基体５０は、第２部材２０及び第１部材１０を支持可能である。基体５０が設けられる場合、第２部材２０の厚さは、例えば、３０ｎｍ以下でも良い。基体５０により第２部材２０が支持されるため、安定した第２部材２０が得やすくなる。第２部材２０を低コストで得ることができる。 The thickness of the substrate 50 (length along the Z-axis direction) is, for example, 5 nm or more and 1000 μm or less. The substrate 50 can support the second member 20 and the first member 10. When the substrate 50 is provided, the thickness of the second member 20 may be, for example, 30 nm or less. Since the second member 20 is supported by the base 50, a stable second member 20 can be easily obtained. The second member 20 can be obtained at low cost.

基体５０は、光透過性を有しても良い。例えば、光６１は、基体５０を介して、第２部材２０に入射できる。基体５０は、例えば、Ａｌ２Ｏ３、ＡｌＮ、ＧａＮ及びＭｇＯよりなる群から選択された少なくとも１つなどを含む。 The substrate 50 may have light transmission. For example, the light 61 can enter the second member 20 via the substrate 50. The substrate 50 includes, for example, at least one selected from the group consisting of Al 2 O 3, Al N, GaN and Mg O.

図７は、第１実施形態に係る電子放出素子を例示する模式的断面図である。
図７に示すように、実施形態に係る電子放出素子１１４において、第１部材１０は、島状である。例えば、複数の島状の第１部材１０の間において、第２部材２０の表面が露出しも良い。電子放出素子１１４においては、安定した第１部材１０を容易に得ることができる。例えば、第１部材１０を低いコストで得ることができる。 FIG. 7 is a schematic cross-sectional view illustrating the electron emitting element according to the first embodiment.
As shown in FIG. 7, in the electron emitting element 114 according to the embodiment, the first member 10 has an island shape. For example, the surface of the second member 20 may be exposed between the plurality of island-shaped first members 10. In the electron emitting element 114, a stable first member 10 can be easily obtained. For example, the first member 10 can be obtained at a low cost.

図８は、第１実施形態に係る電子放出素子を例示する模式的断面図である。
図８に示すように、実施形態に係る電子放出素子１１５は、第１部材１０及び第２部材２０に加えて、第３部材３０を含む。第３部材３０は、第２部材２０と第１部材１０との間に設けられる。第３部材３０は、例えば、ＳｉＣを含む。このＳｉＣは、ｐ形である。電子放出素子１１５においては、例えば、４００ｎｍ程度までの長波長の光の吸収が得られ、電子放出を得ることができる。 FIG. 8 is a schematic cross-sectional view illustrating the electron emitting element according to the first embodiment.
As shown in FIG. 8, the electron emitting element 115 according to the embodiment includes a third member 30 in addition to the first member 10 and the second member 20. The third member 30 is provided between the second member 20 and the first member 10. The third member 30 contains, for example, SiC. This SiC is p-type. In the electron emitting element 115, for example, absorption of light having a long wavelength up to about 400 nm can be obtained, and electron emission can be obtained.

第３部材３０（ＳｉＣ）のＺ軸方向の厚さは、例えば、５ｎｍ以上１００ｎｍ以下である。厚さが５ｎｍ以上のときに、例えば、４００ｎｍ程度までの長波長光を吸収することが容易になる。厚さが１００ｎｍ以下のときに、例えば、第２部材２０から第１部材１０への電子の輸送が容易になる。 The thickness of the third member 30 (SiC) in the Z-axis direction is, for example, 5 nm or more and 100 nm or less. When the thickness is 5 nm or more, it becomes easy to absorb long wavelength light up to, for example, about 400 nm. When the thickness is 100 nm or less, for example, the transport of electrons from the second member 20 to the first member 10 becomes easy.

図９は、第１実施形態に係る電子放出素子を例示する模式的断面図である。
図９に示すように、実施形態に係る電子放出素子１１６は、第１部材１０及び第２部材２０に加えて、第３部材３０を含む。第３部材３０は、第２部材２０と第１部材１０との間に設けられる。 FIG. 9 is a schematic cross-sectional view illustrating the electron emitting element according to the first embodiment.
As shown in FIG. 9, the electron emitting element 116 according to the embodiment includes a third member 30 in addition to the first member 10 and the second member 20. The third member 30 is provided between the second member 20 and the first member 10.

電子放出素子１１６において、第１部材１０に含まれる半導体部材１５は、Ａｌ及びＧａからなる群から選択された少なくとも１つと、窒素と、を含む。半導体部材１５は、例えば、ｎ形のＡｌＧａＮを含む。 In the electron emitting element 116, the semiconductor member 15 included in the first member 10 includes at least one selected from the group consisting of Al and Ga, and nitrogen. The semiconductor member 15 includes, for example, an n-type AlGaN.

第３部材３０は、例えば、Ｉｎ及びＧａと、窒素と、を含む。第３部材３０は、例えば、ＩｎＧａＮを含む。このＩｎＧａＮは、例えば、ｐ形である。電子放出素子１１６においては、例えば、可視光も吸収し、電子放出を得ることができる。 The third member 30 contains, for example, In and Ga and nitrogen. The third member 30 includes, for example, InGaN. This InGaN is, for example, p-type. In the electron emitting element 116, for example, visible light can also be absorbed to obtain electron emission.

電子放出素子１１６において、第３部材３０（例えば、ｐ形のＩｎＧａＮ）のＺ軸方向の厚さは、例えば、５ｎｍ以上１００ｎｍ以下である。厚さが５ｎｍ以上のときに、例えば、可視光を吸収することが容易になる。厚さが１００ｎｍ以下のときに、例えば、第３部材３０の結晶性を維持することが容易になる。 In the electron emitting element 116, the thickness of the third member 30 (for example, p-shaped InGaN) in the Z-axis direction is, for example, 5 nm or more and 100 nm or less. When the thickness is 5 nm or more, for example, it becomes easy to absorb visible light. When the thickness is 100 nm or less, for example, it becomes easy to maintain the crystallinity of the third member 30.

（第２実施形態）
図１０は、第２実施形態に係る電子放出素子を例示する模式的断面図である。
図１０に示すように、実施形態に係る電子放出素子１２０は、第１部材１０及び第２部材２０に加えて、発光部７０をさらに含む。第２部材２０は、発光部７０と第１部材１０との間に設けられる。 (Second Embodiment)
FIG. 10 is a schematic cross-sectional view illustrating the electron emitting element according to the second embodiment.
As shown in FIG. 10, the electron emitting element 120 according to the embodiment further includes a light emitting unit 70 in addition to the first member 10 and the second member 20. The second member 20 is provided between the light emitting unit 70 and the first member 10.

発光部７０から光６１が放出される。光６１は、第２部材２０に入射する。第１部材１０から光６１に応じた電子６２が放出される。例えば、発光部７０は、所望のタイミングで所望の強度の光６１を出射可能である。例えば、所望のタイミングで所望の量の電子を第１部材１０から放出されることができる。 Light 61 is emitted from the light emitting unit 70. The light 61 is incident on the second member 20. Electrons 62 corresponding to the light 61 are emitted from the first member 10. For example, the light emitting unit 70 can emit light 61 having a desired intensity at a desired timing. For example, a desired amount of electrons can be emitted from the first member 10 at a desired timing.

発光部７０は、例えば、ＬＥＤ（light emitting diode）、または、ＬＤ（Laser Diode）を含む。 The light emitting unit 70 includes, for example, an LED (light emitting diode) or an LD (Laser Diode).

図１１は、第２実施形態に係る電子放出素子を例示する模式的断面図である。
図１１に示すように、実施形態に係る電子放出素子１２１は、第１部材１０、第２部材２０及び発光部７０に加えて、第４部材４０をさらに含む。第４部材４０は、発光部７０と第２部材２０との間にある。第４部材４０は、例えば、基体として機能しても良い。例えば、第４部材４０は、第２部材２０及び第１部材１０を支持しても良い。 FIG. 11 is a schematic cross-sectional view illustrating the electron emitting element according to the second embodiment.
As shown in FIG. 11, the electron emitting element 121 according to the embodiment further includes a fourth member 40 in addition to the first member 10, the second member 20, and the light emitting unit 70. The fourth member 40 is between the light emitting unit 70 and the second member 20. The fourth member 40 may function as, for example, a substrate. For example, the fourth member 40 may support the second member 20 and the first member 10.

第４部材４０は、例えば、光透過性を有する。発光部７０から放出された光６１は、第４部材４０を通過して第２部材２０に入射する。光６１に応じた電子６２が第１部材１０から放出される。電子放出素子１２１において、第４部材４０は、例えば、Ａｌ２Ｏ３、ＡｌＮ、ＧａＮ及びＭｇＯよりなる群から選択された少なくとも１つなどを含む。 The fourth member 40 has, for example, light transmission. The light 61 emitted from the light emitting unit 70 passes through the fourth member 40 and is incident on the second member 20. Electrons 62 corresponding to the light 61 are emitted from the first member 10. In the electron emitting element 121, the fourth member 40 includes, for example, at least one selected from the group consisting of Al 2 O 3, Al N, GaN and MgO.

図１２は、第２実施形態に係る電子放出素子を例示する模式的断面図である。
図１２に示すように、実施形態に係る電子放出素子１２２は、第１部材１０、第２部材２０及び発光部７０に加えて、第４部材４０をさらに含む。第４部材４０は、発光部７０と第２部材２０との間にある。 FIG. 12 is a schematic cross-sectional view illustrating the electron emitting element according to the second embodiment.
As shown in FIG. 12, the electron emitting element 122 according to the embodiment further includes a fourth member 40 in addition to the first member 10, the second member 20, and the light emitting unit 70. The fourth member 40 is between the light emitting unit 70 and the second member 20.

電子放出素子１２２において、第４部材４０は、ダイヤモンド及びグラファイトよりなる群から選択された少なくとも１つ（例えばダイヤモンド部材４５）を含む。第４部材４０のダイヤモンド部材４５における不純物の濃度は、第２部材２０のダイヤモンド部材２５に含まれる不純物の濃度よりも低い。 In the electron emitting element 122, the fourth member 40 includes at least one selected from the group consisting of diamond and graphite (for example, diamond member 45). The concentration of impurities in the diamond member 45 of the fourth member 40 is lower than the concentration of impurities contained in the diamond member 25 of the second member 20.

例えば、第２部材２０に含まれるダイヤモンド部材２５は、Ｂ及びＡｌよりなる群から選択された少なくとも１つの第１元素を含む。１つの例において、第４部材４０に含まれるダイヤモンド部材４５は第１元素を含まない。別の例において、第４部材４０に含まれるダイヤモンド部材４５における第１元素の濃度は、第２部材２０に含まれるダイヤモンド部材２５における第１元素の濃度よりも低い。電子放出素子１２２においては、例えば、高品質なダイヤモンド部材２５及び４５が得られる。 For example, the diamond member 25 included in the second member 20 contains at least one first element selected from the group consisting of B and Al. In one example, the diamond member 45 included in the fourth member 40 does not contain the first element. In another example, the concentration of the first element in the diamond member 45 contained in the fourth member 40 is lower than the concentration of the first element in the diamond member 25 contained in the second member 20. In the electron emitting element 122, for example, high quality diamond members 25 and 45 can be obtained.

電子放出素子１２２において、第４部材４０のＺ軸方向の厚さは、例えば、５ｎｍ以上１ｍｍ以下である。厚さが５ｎｍ以上のときに、例えば、発光部７０とダイヤモンド部材２５とを電気的に絶縁することが容易になる。厚さが１ｍｍ以下のときに、例えば、ダイシング（分断）などの加工が容易になる。 In the electron emitting element 122, the thickness of the fourth member 40 in the Z-axis direction is, for example, 5 nm or more and 1 mm or less. When the thickness is 5 nm or more, for example, it becomes easy to electrically insulate the light emitting portion 70 and the diamond member 25. When the thickness is 1 mm or less, for example, processing such as dicing (division) becomes easy.

（第３実施形態）
図１３は、第３実施形態に係る電子放出素子を例示する模式的断面図である。
図１３に示すように、実施形態に係る電子放出素子１３０は、第１部材１０及び第２部材２０に加えて、電極７５をさらに含む。例えば、電極７５の電位を制御することで、第１部材１０から放出された電子６２を取り出し易くすることができる。電極７５の電位を制御することで、電子６２を加速することができる。電極７５は、第１実施形態または第２実施形態に係る任意の構成に設けることができる。 (Third Embodiment)
FIG. 13 is a schematic cross-sectional view illustrating the electron emitting element according to the third embodiment.
As shown in FIG. 13, the electron emitting element 130 according to the embodiment further includes an electrode 75 in addition to the first member 10 and the second member 20. For example, by controlling the potential of the electrode 75, the electrons 62 emitted from the first member 10 can be easily taken out. By controlling the potential of the electrode 75, the electron 62 can be accelerated. The electrode 75 can be provided in any configuration according to the first embodiment or the second embodiment.

図４〜図１３においては、容器１７が省略されている。電子放出素子１１１〜１１６、１２０〜１２２及び１３０は、容器１７を含んでも良い。 In FIGS. 4 to 13, the container 17 is omitted. The electron emitting elements 111 to 116, 120 to 122 and 130 may include a container 17.

実施形態は、以下の構成（例えば、技術案）を含んでも良い。
（構成１）
ｎ形の半導体部材を含む第１部材と、
ｐ形のダイヤモンド部材を含む第２部材であって、前記ダイヤモンド部材は、ダイヤモンド及びグラファイトよりなる群から選択された少なくとも１つを含む、前記第２部材と、
を備え、
前記半導体部材は、第１材料、第２材料及び第３材料よりなる群から選択された少なくとも１つを含み、
前記第１材料は、Ｂ、Ａｌ、Ｉｎ及びＧａからなる群から選択された少なくとも１つと、窒素と、を含み、
前記第２材料は、ＺｎＯ及びＺｎＭｇＯからなる群から選択された少なくとも１つを含み、
前記第３材料は、ＢａＴｉＯ３、ＰｂＴｉＯ３、Ｐｂ（Ｚｒｘ，Ｔｉ１−ｘ）Ｏ３、ＫＮｂＯ３、ＬｉＮｂＯ３、ＬｉＴａＯ３、ＮａｘＷＯ３、Ｚｎ２Ｏ３、Ｂａ２ＮａＮｂ５Ｏ５、Ｐｂ２ＫＮｂ５Ｏ１５及びＬｉ２Ｂ４Ｏ７からなる群から選択された少なくとも１つを含む、電子放出素子。 The embodiment may include the following configurations (eg, technical proposals).
(Structure 1)
The first member including the n-type semiconductor member and
A second member including a p-shaped diamond member, wherein the diamond member comprises at least one selected from the group consisting of diamond and graphite.
With
The semiconductor member comprises at least one selected from the group consisting of a first material, a second material and a third material.
The first material comprises at least one selected from the group consisting of B, Al, In and Ga and nitrogen.
The second material comprises at least one selected from the group consisting of ZnO and ZnMgO.
The third material is BaTIO 3 , PbTIO 3 , Pb (Zr x , Ti 1-x ) O 3 , KNbO 3 , LiNbO 3 , LiTaO 3 , Na x WO 3 , Zn 2 O 3 , Ba 2 NaNb 5 O 5 An electron emitting element comprising at least one selected from the group consisting of Pb 2 KNb 5 O 15 and Li 2 B 4 O 7.

（構成２）
入射した光に応じて電子を放出する、構成１記載の電子放出素子。 (Structure 2)
The electron emitting element according to configuration 1, which emits electrons according to the incident light.

（構成３）
前記光のピーク波長は、３００ｎｍ以下である、構成２記載の電子放出素子。 (Structure 3)
The electron emitting element according to the second configuration, wherein the peak wavelength of the light is 300 nm or less.

（構成４）
前記光のピーク波長は、２１０ｎｍ以下である、構成２記載の電子放出素子。 (Structure 4)
The electron emitting element according to the second configuration, wherein the peak wavelength of the light is 210 nm or less.

（構成５）
前記第１部材は、第１面及び第２面を含み、
前記第２面は、前記第２部材と前記第１面との間にあり、
前記電子は、前記第１面から放出される、構成２〜４のいずれか１つに記載の電子放出素子。 (Structure 5)
The first member includes a first surface and a second surface.
The second surface is between the second member and the first surface.
The electron emitting element according to any one of configurations 2 to 4, wherein the electrons are emitted from the first surface.

（構成６）
前記半導体部材は、前記第１材料、前記第２材料及び前記第３材料よりなる群から選択された前記少なくとも１つの多結晶を含む、構成１〜５のいずれか１つに記載の電子放出素子。 (Structure 6)
The electron emitting element according to any one of configurations 1 to 5, wherein the semiconductor member includes at least one polycrystal selected from the group consisting of the first material, the second material, and the third material. ..

（構成７）
前記第２部材は、ダイヤモンドの多結晶を含む、構成１〜６のいずれか１つに記載の電子放出素子。 (Structure 7)
The electron emitting element according to any one of configurations 1 to 6, wherein the second member includes a polycrystal of diamond.

（構成８）
前記第２部材から前記第１部材への第１方向に沿う前記第１部材の厚さは、１０ｎｍ以下である、構成１〜７のいずれか１つに記載の電子放出素子。 (Structure 8)
The electron emitting element according to any one of configurations 1 to 7, wherein the thickness of the first member along the first direction from the second member to the first member is 10 nm or less.

（構成９）
前記第２部材から前記第１部材への第１方向に沿う前記第２部材の厚さは、３０ｎｍ以下である、構成１〜７のいずれか１つに記載の電子放出素子。 (Structure 9)
The electron emitting element according to any one of configurations 1 to 7, wherein the thickness of the second member along the first direction from the second member to the first member is 30 nm or less.

（構成１０）
前記半導体部材は、分極を有する、構成１〜９のいずれか１つに記載の電子放出素子。 (Structure 10)
The electron emitting element according to any one of configurations 1 to 9, wherein the semiconductor member has polarization.

（構成１１）
基体をさらに備え、
前記第２部材は、前記基体と前記第１部材との間に設けられた、構成１〜１０のいずれか１つに記載の電子放出素子。 (Structure 11)
With more substrates
The electron emitting element according to any one of configurations 1 to 10, wherein the second member is provided between the substrate and the first member.

（構成１２）
前記半導体部材は、前記第１材料を含み、
前記第１材料は、Ｍｇ、Ｚｎ及びＣの少なくともいずれかを含む、構成１〜１１のいずれか１つに記載の電子放出素子。 (Structure 12)
The semiconductor member includes the first material and contains the first material.
The electron emitting element according to any one of configurations 1 to 11, wherein the first material contains at least one of Mg, Zn and C.

（構成１３）
前記半導体部材は、Ａｌ及びＧａよりなる群から選択された少なくとも１つと、窒素と、を含み、
前記半導体部材は、
第１領域及び第２領域を含み、
前記第２領域は、前記第２部材と前記第１領域との間にあり、
前記第２領域におけるＡｌの組成比は、前記第１領域におけるＡｌの組成比よりも高い、構成１〜１１のいずれか１つに記載の電子放出素子。 (Structure 13)
The semiconductor member comprises at least one selected from the group consisting of Al and Ga and nitrogen.
The semiconductor member is
Includes first and second regions
The second region lies between the second member and the first region.
The electron emitting element according to any one of configurations 1 to 11, wherein the composition ratio of Al in the second region is higher than the composition ratio of Al in the first region.

（構成１４）
前記第２部材は、前記第１部材と接する、構成１〜１２のいずれか１つに記載の電子放出素子。 (Structure 14)
The electron emitting element according to any one of configurations 1 to 12, wherein the second member is in contact with the first member.

（構成１５）
第３部材をさらに備え、
前記第３部材は、前記第２部材と前記第１部材との間に設けられ、
前記第３部材は、ＳｉＣを含む、構成１〜１２のいずれか１つに記載の電子放出素子。 (Structure 15)
With a third member
The third member is provided between the second member and the first member.
The electron emitting element according to any one of configurations 1 to 12, wherein the third member includes SiC.

（構成１６）
第３部材をさらに備え、
前記第３部材は、前記第２部材と前記第１部材との間に設けられ、
前記半導体部材は、Ａｌ及びＧａからなる群から選択された少なくとも１つと、窒素と、を含み、
前記第３部材は、Ｉｎ及びＧａと、窒素と、を含む、構成１〜１２のいずれか１つに記載の電子放出素子。 (Structure 16)
With a third member
The third member is provided between the second member and the first member.
The semiconductor member comprises at least one selected from the group consisting of Al and Ga and nitrogen.
The electron emitting element according to any one of configurations 1 to 12, wherein the third member contains In and Ga and nitrogen.

（構成１７）
前記第１部材は、島状である、構成１〜１６のいずれか１つに記載の電子放出素子。 (Structure 17)
The electron emitting element according to any one of configurations 1 to 16, wherein the first member is island-shaped.

（構成１８）
発光部をさらに備え、
前記第２部材は、前記発光部と前記第１部材との間に設けられた、構成１〜１７のいずれか１つに記載の電子放出素子。 (Structure 18)
With a light emitting part
The electron emitting element according to any one of configurations 1 to 17, wherein the second member is provided between the light emitting unit and the first member.

（構成１９）
光透過性の第４部材をさらに備え、
前記第４部材は、前記発光部と前記第２部材との間にある、構成１８記載の電子放出素子。 (Structure 19)
Further equipped with a light-transmitting fourth member,
The electron emitting element according to the configuration 18, wherein the fourth member is located between the light emitting portion and the second member.

（構成２０）
前記第４部材はダイヤモンド及びグラファイトよりなる群から選択された少なくとも１つを含み、
前記第２部材に含まれる前記ダイヤモンド部材は、Ｂ及びＡｌよりなる群から選択された少なくとも１つの第１元素を含み、
前記第４部材に含まれる前記ダイヤモンド部材は前記第１元素を含まない、または、前記第４部材に含まれる前記ダイヤモンド部材における前記第１元素の濃度は、前記第２部材に含まれる前記ダイヤモンド部材における前記第１元素の濃度よりも低い、構成１９記載の電子放出素子。 (Structure 20)
The fourth member comprises at least one selected from the group consisting of diamond and graphite.
The diamond member contained in the second member contains at least one first element selected from the group consisting of B and Al.
The diamond member contained in the fourth member does not contain the first element, or the concentration of the first element in the diamond member contained in the fourth member is the concentration of the first element contained in the second member. The electron emitting element according to the configuration 19, which is lower than the concentration of the first element in the above.

（構成２１）
前記第１部材は、第１面及び第２面を含み、
前記第２面は、前記第２部材と前記第１面との間にあり、
光が前記第１面から前記第２部材に入射し、
前記光に応じた電子が前記第１面から放出される、構成１記載の電子放出素子。 (Structure 21)
The first member includes a first surface and a second surface.
The second surface is between the second member and the first surface.
Light enters the second member from the first surface and
The electron emitting element according to the first configuration, wherein electrons corresponding to the light are emitted from the first surface.

（構成２２）
前記第１部材は、第１面及び第２面を含み、
前記第２面は、前記第２部材と前記第１面との間にあり、
前記第２部材は、第３面及び第４面を含み、
前記第３面は、前記第４面と前記第１部材との間にあり、
光が前記第４面から前記第２部材に入射し、
前記光に応じた電子が前記第１面から放出される、構成１記載の電子放出素子。 (Structure 22)
The first member includes a first surface and a second surface.
The second surface is between the second member and the first surface.
The second member includes a third surface and a fourth surface.
The third surface is between the fourth surface and the first member.
Light enters the second member from the fourth surface,
The electron emitting element according to the first configuration, wherein electrons corresponding to the light are emitted from the first surface.

実施形態によれば、効率を向上できる電子放出素子が提供できる。 According to the embodiment, an electron emitting element capable of improving efficiency can be provided.

以上、具体例を参照しつつ、本発明の実施の形態について説明した。しかし、本発明は、これらの具体例に限定されるものではない。例えば、電子放出素子に含まれる第１部材、第２部材、第３部材、第４部材、基体及び電極などの各要素の具体的な構成に関しては、当業者が公知の範囲から適宜選択することにより本発明を同様に実施し、同様の効果を得ることができる限り、本発明の範囲に包含される。 The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configuration of each element such as the first member, the second member, the third member, the fourth member, the substrate, and the electrode included in the electron emitting element shall be appropriately selected from a range known to those skilled in the art. This invention is included in the scope of the present invention as long as the present invention can be carried out in the same manner and the same effect can be obtained.

また、各具体例のいずれか２つ以上の要素を技術的に可能な範囲で組み合わせたものも、本発明の要旨を包含する限り本発明の範囲に含まれる。 Further, a combination of any two or more elements of each specific example to the extent technically possible is also included in the scope of the present invention as long as the gist of the present invention is included.

その他、本発明の実施の形態として上述した電子放出素子を基にして、当業者が適宜設計変更して実施し得る全ての電子放出素子も、本発明の要旨を包含する限り、本発明の範囲に属する。 In addition, all electron emitting elements that can be appropriately designed and implemented by those skilled in the art based on the electron emitting element described above as an embodiment of the present invention are also covered by the present invention as long as the gist of the present invention is included. Belongs to.

その他、本発明の思想の範疇において、当業者であれば、各種の変更例及び修正例に想到し得るものであり、それら変更例及び修正例についても本発明の範囲に属するものと了解される。 In addition, within the scope of the idea of the present invention, those skilled in the art can come up with various modified examples and modified examples, and it is understood that these modified examples and modified examples also belong to the scope of the present invention. ..

本発明のいくつかの実施形態を説明したが、これらの実施形態は、例として提示したものであり、発明の範囲を限定することは意図していない。これら新規な実施形態は、その他の様々な形態で実施されることが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。これら実施形態やその変形は、発明の範囲や要旨に含まれるとともに、特許請求の範囲に記載された発明とその均等の範囲に含まれる。 Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other embodiments, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are also included in the scope of the invention described in the claims and the equivalent scope thereof.

１０…第１部材、 １１、１２…第１、第２面、 １５…半導体部材、 １５ａ、１５ｂ…第１、第２領域、 １７…容器、 １８…外部領域、 ２０…第２部材、 ２３、２４…第３、第４面、 ２５…ダイヤモンド部材、 ３０…第３部材、 ４０…第４部材、 ４５…ダイヤモンド部材、 ５０…基体、 ６１…光、 ６２…電子、 ６３…ホール、 ７０…発光部、 ７５…電極、 １１０〜１１６、１２０〜１２２、１３０…電子放出素子、 Ｅｃ、Ｅｇ、Ｅｖ…エネルギー、 Ｖａｃ…エネルギーレベル、 ｔ１、ｔ２…厚さ 10 ... 1st member, 11, 12 ... 1st, 2nd surface, 15 ... Semiconductor member, 15a, 15b ... 1st, 2nd region, 17 ... Container, 18 ... External region, 20 ... 2nd member, 23, 24 ... 3rd, 4th surface, 25 ... Diamond member, 30 ... 3rd member, 40 ... 4th member, 45 ... Diamond member, 50 ... Base, 61 ... Light, 62 ... Electron, 63 ... Hall, 70 ... Light emission Part, 75 ... Electrode, 110-116, 120-122, 130 ... Electron emitting element, Ec, Eg, Ev ... Energy, Vac ... Energy level, t1, t2 ... Thickness

Claims (22)

ｎ形の半導体部材を含む第１部材と、
ｐ形のダイヤモンド部材を含む第２部材であって、前記ダイヤモンド部材は、ダイヤモンド及びグラファイトよりなる群から選択された少なくとも１つを含む、前記第２部材と、
を備え、
前記半導体部材は、第１材料、第２材料及び第３材料よりなる群から選択された少なくとも１つを含み、
前記第１材料は、Ｂ、Ａｌ、Ｉｎ及びＧａからなる群から選択された少なくとも１つと、窒素と、を含み、
前記第２材料は、ＺｎＯ及びＺｎＭｇＯからなる群から選択された少なくとも１つを含み、
前記第３材料は、ＢａＴｉＯ３、ＰｂＴｉＯ３、Ｐｂ（Ｚｒｘ，Ｔｉ１−ｘ）Ｏ３、ＫＮｂＯ３、ＬｉＮｂＯ３、ＬｉＴａＯ３、ＮａｘＷＯ３、Ｚｎ２Ｏ３、Ｂａ２ＮａＮｂ５Ｏ５、Ｐｂ２ＫＮｂ５Ｏ１５及びＬｉ２Ｂ４Ｏ７からなる群から選択された少なくとも１つを含む、電子放出素子。 The first member including the n-type semiconductor member and
A second member including a p-shaped diamond member, wherein the diamond member comprises at least one selected from the group consisting of diamond and graphite.
With
The semiconductor member comprises at least one selected from the group consisting of a first material, a second material and a third material.
The first material comprises at least one selected from the group consisting of B, Al, In and Ga and nitrogen.
The second material comprises at least one selected from the group consisting of ZnO and ZnMgO.
The third material is BaTIO 3 , PbTIO 3 , Pb (Zr x , Ti 1-x ) O 3 , KNbO 3 , LiNbO 3 , LiTaO 3 , Na x WO 3 , Zn 2 O 3 , Ba 2 NaNb 5 O 5 An electron emitting element comprising at least one selected from the group consisting of Pb 2 KNb 5 O 15 and Li 2 B 4 O 7. 入射した光に応じて電子を放出する、請求項１記載の電子放出素子。 The electron emitting element according to claim 1, which emits electrons according to the incident light. 前記光のピーク波長は、３００ｎｍ以下である、請求項２記載の電子放出素子。 The electron emitting element according to claim 2, wherein the peak wavelength of the light is 300 nm or less. 前記光のピーク波長は、２１０ｎｍ以下である、請求項２記載の電子放出素子。 The electron emitting element according to claim 2, wherein the peak wavelength of the light is 210 nm or less. 前記第１部材は、第１面及び第２面を含み、
前記第２面は、前記第２部材と前記第１面との間にあり、
前記電子は、前記第１面から放出される、請求項２〜４のいずれか１つに記載の電子放出素子。 The first member includes a first surface and a second surface.
The second surface is between the second member and the first surface.
The electron emitting element according to any one of claims 2 to 4, wherein the electrons are emitted from the first surface. 前記半導体部材は、前記第１材料、前記第２材料及び前記第３材料よりなる群から選択された前記少なくとも１つの多結晶を含む、請求項１〜５のいずれか１つに記載の電子放出素子。 The electron emission according to any one of claims 1 to 5, wherein the semiconductor member includes at least one polycrystal selected from the group consisting of the first material, the second material, and the third material. element. 前記第２部材は、ダイヤモンドの多結晶を含む、請求項１〜６のいずれか１つに記載の電子放出素子。 The electron emitting element according to any one of claims 1 to 6, wherein the second member includes a polycrystal of diamond. 前記第２部材から前記第１部材への第１方向に沿う前記第１部材の厚さは、１０ｎｍ以下である、請求項１〜７のいずれか１つに記載の電子放出素子。 The electron emitting element according to any one of claims 1 to 7, wherein the thickness of the first member along the first direction from the second member to the first member is 10 nm or less. 前記第２部材から前記第１部材への第１方向に沿う前記第２部材の厚さは、３０ｎｍ以下である、請求項１〜７のいずれか１つに記載の電子放出素子。 The electron emitting element according to any one of claims 1 to 7, wherein the thickness of the second member along the first direction from the second member to the first member is 30 nm or less. 前記半導体部材は、分極を有する、請求項１〜９のいずれか１つに記載の電子放出素子。 The electron emitting element according to any one of claims 1 to 9, wherein the semiconductor member has polarization. 基体をさらに備え、
前記第２部材は、前記基体と前記第１部材との間に設けられた、請求項１〜１０のいずれか１つに記載の電子放出素子。 With more substrates
The electron emitting element according to any one of claims 1 to 10, wherein the second member is provided between the substrate and the first member. 前記半導体部材は、前記第１材料を含み、
前記第１材料は、Ｍｇ、Ｚｎ及びＣの少なくともいずれかを含む、請求項１〜１１のいずれか１つに記載の電子放出素子。 The semiconductor member includes the first material and contains the first material.
The electron emitting element according to any one of claims 1 to 11, wherein the first material contains at least one of Mg, Zn and C. 前記半導体部材は、Ａｌ及びＧａよりなる群から選択された少なくとも１つと、窒素と、を含み、
前記半導体部材は、
第１領域及び第２領域を含み、
前記第２領域は、前記第２部材と前記第１領域との間にあり、
前記第２領域におけるＡｌの組成比は、前記第１領域におけるＡｌの組成比よりも高い、請求項１〜１１のいずれか１つに記載の電子放出素子。 The semiconductor member comprises at least one selected from the group consisting of Al and Ga and nitrogen.
The semiconductor member is
Includes first and second regions
The second region lies between the second member and the first region.
The electron emitting element according to any one of claims 1 to 11, wherein the composition ratio of Al in the second region is higher than the composition ratio of Al in the first region. 前記第２部材は、前記第１部材と接する、請求項１〜１２のいずれか１つに記載の電子放出素子。 The electron emitting element according to any one of claims 1 to 12, wherein the second member is in contact with the first member. 第３部材をさらに備え、
前記第３部材は、前記第２部材と前記第１部材との間に設けられ、
前記第３部材は、ＳｉＣを含む、請求項１〜１２のいずれか１つに記載の電子放出素子。 With a third member
The third member is provided between the second member and the first member.
The electron emitting element according to any one of claims 1 to 12, wherein the third member includes SiC. 第３部材をさらに備え、
前記第３部材は、前記第２部材と前記第１部材との間に設けられ、
前記半導体部材は、Ａｌ及びＧａからなる群から選択された少なくとも１つと、窒素と、を含み、
前記第３部材は、Ｉｎ及びＧａと、窒素と、を含む、請求項１〜１２のいずれか１つに記載の電子放出素子。 With a third member
The third member is provided between the second member and the first member.
The semiconductor member comprises at least one selected from the group consisting of Al and Ga and nitrogen.
The electron emitting element according to any one of claims 1 to 12, wherein the third member contains In and Ga and nitrogen. 前記第１部材は、島状である、請求項１〜１６のいずれか１つに記載の電子放出素子。 The electron emitting element according to any one of claims 1 to 16, wherein the first member is island-shaped. 発光部をさらに備え、
前記第２部材は、前記発光部と前記第１部材との間に設けられた、請求項１〜１７のいずれか１つに記載の電子放出素子。 With a light emitting part
The electron emitting element according to any one of claims 1 to 17, wherein the second member is provided between the light emitting unit and the first member. 光透過性の第４部材をさらに備え、
前記第４部材は、前記発光部と前記第２部材との間にある、請求項１８記載の電子放出素子。 Further equipped with a light-transmitting fourth member,
The electron emitting element according to claim 18, wherein the fourth member is located between the light emitting unit and the second member. 前記第４部材はダイヤモンド及びグラファイトよりなる群から選択された少なくとも１つを含み、
前記第２部材に含まれる前記ダイヤモンド部材は、Ｂ及びＡｌよりなる群から選択された少なくとも１つの第１元素を含み、
前記第４部材に含まれる前記ダイヤモンド部材は前記第１元素を含まない、または、前記第４部材に含まれる前記ダイヤモンド部材における前記第１元素の濃度は、前記第２部材に含まれる前記ダイヤモンド部材における前記第１元素の濃度よりも低い、請求項１９記載の電子放出素子。 The fourth member comprises at least one selected from the group consisting of diamond and graphite.
The diamond member contained in the second member contains at least one first element selected from the group consisting of B and Al.
The diamond member contained in the fourth member does not contain the first element, or the concentration of the first element in the diamond member contained in the fourth member is the concentration of the first element contained in the second member. The electron emitting element according to claim 19, which is lower than the concentration of the first element in the above. 前記第１部材は、第１面及び第２面を含み、
前記第２面は、前記第２部材と前記第１面との間にあり、
光が前記第１面から前記第２部材に入射し、
前記光に応じた電子が前記第１面から放出される、請求項１記載の電子放出素子。 The first member includes a first surface and a second surface.
The second surface is between the second member and the first surface.
Light enters the second member from the first surface and
The electron emitting element according to claim 1, wherein electrons corresponding to the light are emitted from the first surface. 前記第１部材は、第１面及び第２面を含み、
前記第２面は、前記第２部材と前記第１面との間にあり、
前記第２部材は、第３面及び第４面を含み、
前記第３面は、前記第４面と前記第１部材との間にあり、
光が前記第４面から前記第２部材に入射し、
前記光に応じた電子が前記第１面から放出される、請求項１記載の電子放出素子。 The first member includes a first surface and a second surface.
The second surface is between the second member and the first surface.
The second member includes a third surface and a fourth surface.
The third surface is between the fourth surface and the first member.
Light enters the second member from the fourth surface,
The electron emitting element according to claim 1, wherein electrons corresponding to the light are emitted from the first surface.
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