JP2021052119A - Reflective board for led light emitting element and led package - Google Patents

Abstract

To provide a reflective substrate for an LED light emitting element which has high insulation and excellent chipping resistance, and can suppress the occurrence of a connection failure due to wire bonding, and an application thereof.SOLUTION: There are provided a reflective substrate 10 for an LED light emitting element that includes a metal substrate 1 having a thermal conductivity of 10 Wm-1K-1 or more, an inorganic insulating layer 2 containing a compound having a silanol structure on the metal substrate, and an inorganic reflective layer 3 containing inorganic particles and an inorganic binder on the inorganic insulating layer, and an LED package 100 with a substrate for an LED light emitting element.SELECTED DRAWING: Figure 1

Description

The present disclosure relates to a reflective substrate for an LED light emitting element and an LED package.

In general, a light emitting diode (hereinafter referred to as "LED") has features of power saving and long life as compared with a fluorescent lamp. Since LEDs are used as electronic components, many LEDs are incorporated and used in LED packages formed by combining various components.

For example, Patent Document 1 describes an LED lighting module in which LED bare chips are mounted on a mounting substrate at a high density, and includes a large number of LED bare chips having the same specifications, a mounting substrate having at least a metal surface, and an LED bare chip. A reflective region formed by sealing with a resin is provided, and the surface of the reflective region of the mounting substrate is covered with an inorganic white insulating layer that functions as a reflective material, and at least a part of the inorganic white insulating layer is laminated with a metal layer. The structure is configured, a plurality of unit LED chip groups formed by connecting a plurality of LED bare chips in series are provided, and each unit LED chip group is connected in parallel, the total light beam is 10,000 lumens or more, and the reflection area. The LED lighting module characterized in that the mounting area density of the LED bare chip in the ^{above is 15 mm 2} / cm ^{2 or more is disclosed.}

For example, Patent Document 2 describes a high thermal conductive reflector whose surface is mirror-processed to increase its reflectance, and insulating properties, light transmission, and thermal conductivity formed on the surface of the high thermal conductive reflector. The provided functional transparent film, the LED element directly mounted on the upper surface of the functional transparent film, the circuit pattern provided on the upper surface of the functional transparent film, and the electrical elements of the LED element and the necessary parts of the circuit pattern. A connection means for ensuring connection is provided, and the heat generated in the LED element is conducted by the functional transparent film that is in direct contact with the heat, and the light emitted by the LED element is emitted to the functional transparent film side. There is disclosed an LED illumination structure in which the light is reflected on the surface of the high heat conductive reflector through the functional transparent film to improve the illuminance to the front.

Further, in the LED package, a reflective substrate may be provided in order to effectively utilize the light emitted from the LED light emitting element.

For example, Patent Document 3 describes a reflective substrate for an LED light emitting element having a metal base material and an inorganic reflective layer provided on at least a part of the surface of the metal base material. The thickness A of the inorganic reflective layer at the portion where the LED light emitting element is mounted, which contains the inorganic particles and the inorganic binder, is electrically bonded to the LED light emitting element and formed on the inorganic reflective layer. A reflective substrate for an LED light emitting element, which is thinner than the thickness B of the inorganic reflective layer at the wiring portion, is disclosed.

Japanese Patent No. 6133856 Japanese Unexamined Patent Publication No. 2010-20954 Japanese Unexamined Patent Publication No. 2015-23244

In the LED package having the reflective substrate for the LED light emitting element described in Patent Document 3, for example, the LED light emitting element and the wiring layer provided on the inorganic reflective layer of the reflective substrate are electrically connected by wire bonding. ing. However, as the thickness B of the inorganic reflective layer increases, the height difference between the wiring layer and the LED light emitting element increases, so that the connectivity between the LED light emitting element and the wiring layer by wire bonding (for example, adhesion between the wire and each member) There is room for improvement in terms of increasing sex). Further, in the reflective substrate for an LED light emitting element described in Patent Document 3, since the thickness A of the inorganic reflective layer is thinner than the thickness B of the inorganic reflective layer as described above, there is room for improvement in terms of insulation.

When mounting the reflective substrate on the LED package, the reflective substrate may be processed. For example, cutting the reflective substrate and providing holes in the reflective substrate can be mentioned. However, when processing the reflective substrate, the reflective substrate may be chipped. Hereinafter, the phenomenon in which the reflective substrate is chipped when the reflective substrate is processed is referred to as "chipping". Further, the property indicating that chipping is unlikely to occur is called "chipping resistance".

This disclosure has been made in view of the above circumstances.
An object of the present disclosure is to provide a reflective substrate for an LED light emitting element, which has high insulation properties and excellent chipping resistance, and can suppress the occurrence of connection failure due to wire bonding.
Another aspect of the present disclosure is to provide an LED package having a reflective substrate for an LED light emitting element, which has high insulation and excellent chipping resistance and can suppress the occurrence of connection failure due to wire bonding. Make it an issue.

The present disclosure includes the following aspects.
<1> A metal base material having a thermal conductivity of 10 Wm ^-1 K ^-1 or more, an inorganic insulating layer containing a compound having a silanol structure on the metal base material, and inorganic particles on the inorganic insulating layer. And an inorganic reflective layer containing an inorganic binder, and a reflective substrate for an LED light emitting element.
<2> The reflective substrate for an LED light emitting element according to <1>, wherein the inorganic insulating layer contains a fibrous metal oxide.
<3> The reflective substrate for an LED light emitting element according to <2>, wherein the ratio of the content of the compound having a silanol structure to the content of the metal oxide is 0.03 to 0.15 on a volume basis.
<4> The refractive index of the inorganic particles is 1.5 to 1.8, the average particle size of the inorganic particles is 0.1 μm to 5 μm, and the inorganic binders are aluminum phosphate and chloride. The reflective substrate for an LED light emitting element according to any one of <1> to <3>, which is at least one inorganic binder selected from the group consisting of aluminum and sodium silicate.
<5> The reflective substrate for an LED light emitting element according to any one of <1> to <4>, wherein the average thickness of the inorganic reflective layer is 40 μm to 200 μm.
<6> The reflective substrate for an LED light emitting element according to any one of <1> to <5>, wherein the average thickness of the inorganic insulating layer is 2 μm or more and less than 10 μm.
<7> The LED light emitting device according to any one of <1> to <6>, wherein the average thickness of the inorganic insulating layer and the average thickness of the inorganic reflective layer are 40 μm to 210 μm. Reflective substrate.
<8> The reflective substrate for an LED light emitting element according to any one of <1> to <7>, wherein the metal base material is an aluminum base material, a copper base material, a nickel base material, or a stainless steel base material.
<9> At least the compound having a silanol structure is selected from the group consisting of a hydrolyzate of a compound represented by the following formula (1) and a hydrolyzate condensate of a compound represented by the following formula (1). The reflective substrate for an LED light emitting element according to any one of <1> to <8>, which is one kind of compound.

In formula (1), R ¹ and R ² each independently represent an alkyl group, R ³ represents an alkyl group or an alkoxy group, L represents a divalent linking group, and Y represents a divalent linking group. , Represents a functional group.
<10> The reflective substrate for an LED light emitting element according to any one of <1> to <9>, which has a wiring layer on the inorganic reflective layer.
<11> An LED package comprising the reflection substrate for an LED light emitting element according to any one of <1> to <10> and the LED light emitting element.

According to one aspect of the present disclosure, it is possible to provide a reflective substrate for an LED light emitting element, which has high insulation properties and excellent chipping resistance, and can suppress the occurrence of connection failure due to wire bonding.
According to another aspect of the present disclosure, there is provided an LED package having a reflective substrate for an LED light emitting element, which has high insulation and excellent chipping resistance and can suppress the occurrence of connection failure due to wire bonding. be able to.

It is the schematic sectional drawing which shows an example of the LED package which concerns on this disclosure. It is the schematic sectional drawing which shows another example of the LED package which concerns on this disclosure. It is the schematic explaining the wiring pattern used for evaluation.

Hereinafter, embodiments of the present disclosure will be described. The present disclosure is not limited to the following embodiments, and may be carried out with appropriate modifications within the scope of the purpose of the present disclosure.

In the present disclosure, the numerical range represented by using "~" means a range including the numerical values before and after "~" as the lower limit value and the upper limit value. In the numerical range described stepwise in the present disclosure, the upper limit value or the lower limit value described in a certain numerical range may be replaced with the upper limit value or the lower limit value of another numerical range described stepwise. Further, in the numerical range described in the present disclosure, the upper limit value or the lower limit value described in a certain numerical range may be replaced with the value shown in the examples.
In the present disclosure, the amount of each component in the composition means the total amount of the plurality of substances present in the composition when a plurality of substances corresponding to each component are present in the composition, unless otherwise specified. ..
In the present disclosure, "% by mass" and "% by weight" are synonymous, and "parts by mass" and "parts by weight" are synonymous.
In the present disclosure, a combination of two or more preferred embodiments is a more preferred embodiment.
Regarding the notation of a group (so-called atomic group) in the present disclosure, the notation that does not describe substitution or non-substitution includes both those having no substituent and those having a substituent. For example, the "alkyl group" includes not only an alkyl group having no substituent (so-called unsubstituted alkyl group) but also an alkyl group having a substituent (so-called substituted alkyl group).
In the present disclosure, the "total solid content mass" means the total mass of the components excluding the solvent from the total composition of the composition.

<Reflective substrate for LED light emitting element>
The reflective substrate for an LED light emitting element according to the present disclosure (hereinafter, may be simply referred to as “reflective substrate”) is ^{a metal substrate having a thermal conductivity of 10 Wm -1} K ^-1 or more (hereinafter, simply “metal substrate”). On the metal substrate, an inorganic insulating layer containing a compound having a silanol structure (hereinafter, may be simply referred to as an “inorganic insulating layer”), and on the inorganic insulating layer. It has an inorganic particle and an inorganic reflective layer containing an inorganic binder (hereinafter, may be simply referred to as an “inorganic reflective layer”).

By having the above configuration, the reflective substrate for an LED light emitting element according to the present disclosure has high insulation and excellent chipping resistance, and can suppress the occurrence of connection failure due to wire bonding. The reason why the reflective substrate for the LED light emitting element according to the present disclosure exerts the above effect is presumed as follows. As described above, for example, in the reflective substrate for an LED light emitting element described in Patent Document 3, the thickness of the inorganic reflective layer at the portion of the wiring formed on the inorganic reflective layer is larger than the thickness of the portion where the LED light emitting element is mounted. Since it is necessary to reduce the thickness of the inorganic reflective layer, the withstand voltage may be lowered. On the other hand, the reflective substrate for an LED light emitting element according to the present disclosure can improve the withstand voltage by having an inorganic insulating layer containing a compound having a silanol structure between the metal substrate and the inorganic reflective layer. Since the withstand voltage can be improved by the inorganic insulating layer, the thickness of the inorganic reflective layer in the reflective substrate for the LED light emitting element according to the present disclosure can be adjusted without being restricted as described in Patent Document 3. Can be done. Therefore, for example, when the wiring layer arranged on the inorganic reflective layer and the LED light emitting element arranged on the reflective substrate are electrically connected, the height difference between the wiring layer and the LED light emitting element should be reduced. Can be done. Further, the compound having a silanol structure contained in the inorganic insulating layer includes a metal base material (for example, a natural oxide film formed on the surface of the metal base material) and an inorganic reflective layer (particularly, an inorganic bond contained in the inorganic reflective layer). Has a strong affinity for agents). By containing a compound having a silanol structure in the inorganic insulating layer, it is possible to improve the durability of the inorganic insulating layer, the adhesion between the inorganic insulating layer and the metal base material, and the adhesion between the inorganic insulating layer and the inorganic reflective layer. it can. Therefore, the reflective substrate for an LED light emitting element according to the present disclosure has high insulating properties and excellent chipping resistance, and can suppress the occurrence of connection failure due to wire bonding.

Hereinafter, the components of the reflective substrate for the LED light emitting element according to the present disclosure will be specifically described.

<< Metallic base material >>
The reflective substrate for an LED light emitting element according to the present disclosure has a metal base material having ^{a thermal conductivity of 10 Wm -1} K ^{-1 or more.} When the reflective substrate for an LED light emitting element according to the present disclosure has the metal base material, the thermal conductivity can be improved.

The thermal conductivity of the metal substrate, from the viewpoint of thermal ^{conductivity,} is preferably ^{50Wm -1 K} -1 or higher, more preferably ^{100Wm -1 K} -1 or higher, ^{200 Wm} -1 ^{K -1} or higher Is particularly preferable. The upper limit of the thermal conductivity of the metal substrate is not limited. The higher the thermal conductivity of the metal substrate, the better the thermal conductivity. The thermal conductivity of the metal substrate may be determined ^{, for example, in the range of 500 Wm -1} K ^{-1 or less.}

The thermal conductivity of a metal substrate is determined by multiplying the thermal diffusivity of the metal substrate, the specific heat of the metal substrate, and the density of the metal substrate. The specific heat of the metal base material and the thermal diffusivity of the metal base material are measured by a laser flash method. The density of the metal base material is measured by a precision balance provided with a function for measuring the density (for example, specific gravity measurement kit AD-1653: manufactured by A & D Co., Ltd.).

The metal contained in the metal base material is not limited as long as the metal ^{has a thermal conductivity in the range of 10 Wm -1} K ^{-1 or more.} The metal contained in the metal base material may be a simple substance or an alloy. Examples of the metal contained in the metal base material include aluminum (Al), gold (Au), silver (Ag), copper (Cu), tantalum (Ta), niobium (Nb), titanium (Ti), and hafnium (Hf). ), Zirconium (Zr), Zinc (Zn), Tungsten (W), Bismuth (Bi), Antimon (Sb), and Nickel (Ni).

From the viewpoint of thermal conductivity and light reflectance, the metal base material is preferably an aluminum base material, a copper base material, a nickel base material, or a stainless steel base material, and preferably an aluminum base material. Further, since the metal base material is an aluminum base material, the adhesion between the aluminum base material and the inorganic insulating layer can be improved, so that the chipping resistance can be improved.

Hereinafter, an aluminum base material, which is an example of a metal base material, will be described. Examples of the aluminum substrate include an aluminum substrate. Examples of the aluminum substrate include a pure aluminum substrate, an alloy plate containing aluminum as a main component and a trace amount of foreign elements, a substrate in which high-purity aluminum is vapor-deposited on low-purity aluminum (for example, a recycled material), and a base material (for example). , Silicon wafer, quartz, or glass), a substrate coated with high-purity aluminum by a known method (for example, vapor deposition or sputtering), and a resin substrate on which aluminum is laminated.

Examples of the foreign element contained in the alloy plate include silicon, iron, copper, manganese, magnesium, chromium, zinc, bismuth, nickel, and titanium. The content of different elements in the alloy plate is preferably 10% by mass or less.

As the aspect and manufacturing method of the aluminum base material, the aspects and manufacturing methods described in paragraphs 0031 to 0051 of International Publication No. 2010/150810 may be applied. The contents of the above method are incorporated herein by reference.

An oxide film may be formed on the surface of the metal base material. The oxide film may be a natural oxide film (referring to an oxide film formed by natural oxidation) or an anodized film (referring to an oxide film formed by anodization treatment).

The shape of the metal substrate is not limited. The shape of the metal base material is preferably a flat plate. In the present disclosure, "flat plate" means a shape having two main planes. Examples of the shape of the metal base material in a plan view include a quadrangle and a circle.

The thickness of the metal substrate is not limited. From the viewpoint of heat dissipation, the average thickness of the metal base material is preferably 0.1 mm to 3 mm, more preferably 0.15 mm to 1.5 mm, and particularly preferably 0.2 mm to 1 mm. preferable. The average thickness of the metal base material is an arithmetic mean of the thickness of the metal base material measured at any 10 points in the cross-sectional observation. Cross-section observation is performed using a known microscope (for example, a scanning electron microscope).

<< Inorganic insulation layer >>
The reflective substrate for an LED light emitting element according to the present disclosure has an inorganic insulating layer containing a compound having a silanol structure on a metal base material. When the reflective substrate for an LED light emitting element according to the present disclosure has the above-mentioned inorganic insulating layer, the insulating property and the chipping resistance can be improved, and the occurrence of connection failure due to wire bonding can be suppressed.

The inorganic insulating layer may be arranged on a part or the entire surface of the surface of the metal base material. For example, when the LED light emitting element described later is arranged on the reflection substrate for the LED light emitting element according to the present disclosure, the inorganic insulating layer is arranged on the surface of the metal base material on the side where the LED light emitting element is located. Is preferable. For example, when the inorganic insulating layer is arranged on the surface of the metal base material on the side where the LED light emitting element is located, the inorganic insulating layer is arranged at least around the LED light emitting element in a plan view. Good. The inorganic reflective layer does not have to be arranged between the metal base material and the LED light emitting element. Further, the inorganic reflective layer may be arranged between the metal base material and the LED light emitting element.

[Compound having silanol structure]
In the present disclosure, the "compound having a silanol structure" means a silicon compound having a Si-OH bond in the molecule. By containing a compound having a silanol structure in the inorganic insulating layer, it is possible to improve the durability of the machine insulating layer, the adhesion between the inorganic insulating layer and the metal base material, and the adhesion between the inorganic insulating layer and the inorganic reflective layer. Therefore, the chipping resistance can be improved.

The number of Si-OH bonds in the compound having a silanol structure may be one or two or more.

Examples of the compound having a silanol structure include siloxane having an intramolecular Si-OH bond. The siloxane is not limited as long as it is a compound having a siloxane bond (Si—O—Si), and known siloxane can be used.

The compound having a silanol structure is preferably at least one compound selected from the group consisting of a hydrolyzate of alkoxysilane and a hydrolyzed condensate of alkoxysilane from the viewpoint of insulating properties and chipping resistance. More preferably, it is at least one compound selected from the group consisting of a hydrolyzate of an alkoxysilane having a functional group and a hydrolyzed condensate of an alkoxysilane having a functional group.

In the present disclosure, "alkoxysilane" means a silicon compound containing a silicon atom directly bonded to at least one alkoxy group. The alkoxysilane may have a siloxane bond. The alkoxysilane is preferably an alkoxysilane having two or more alkoxy groups.

In the present disclosure, the "hydrolyzate of alkoxysilane" means a compound produced by hydrolysis of alkoxysilane. Hydrolysis of an alkoxysilane (specifically, hydrolysis of an alkoxy group bonded to a silicon atom) produces a silanol group (Si-OH).

In the present disclosure, the "hydrolyzed condensate of alkoxysilane" means a compound produced by condensation (including condensation polymerization) of a hydrolyzate of alkoxysilane. A siloxane bond is formed by the condensation of silanol groups produced by the hydrolysis of alkoxysilane. The hydrolyzed condensate of alkoxysilane has, for example, a silanol group at the end of its molecular structure.

The functional group in alkoxysilane may be an epoxy group, a glycidyl group, a glycidyloxy group, a vinyl group, an acryloyl group, an acryloyloxy group, a methacryloyl group, a methacryloyloxy group, an amino group, an isocyanate group, a ureido group, or a mercapto group. Preferably, it is an epoxy group, a glycidyl group, a glycidyloxy group, a vinyl group, an acryloyl group, an acryloyloxy group, a methacryloyl group, a methacryloyloxy group, or an isocyanate group, and more preferably an epoxy group, a glycidyl group, or a glycidyloxy group. More preferably, it is particularly preferably a glycidyloxy group.

The number of functional groups in the alkoxysilane may be one or two or more.

Specifically, the compound having a silanol structure is a hydrolyzate of the compound represented by the following formula (1) and a hydrolysis of the compound represented by the following formula (1) from the viewpoint of insulating property and chipping resistance. It is preferably at least one compound selected from the group consisting of condensates. The compound represented by the following formula (1) is one of the preferred embodiments of alkoxysilane.

In formula (1), R ¹ and R ² each independently represent an alkyl group, R ³ represents an alkyl group or an alkoxy group, L represents a divalent linking group, and Y represents a divalent linking group. , Represents a functional group.

In the present disclosure, the "hydrolyzate of the compound represented by the formula (1)" means a compound produced by hydrolysis of the compound represented by the formula (1). A silanol group (Si-OH) is produced by hydrolysis of the compound represented by the formula (1).

In the present disclosure, the "hydrolyzed condensate of a compound represented by the formula (1)" is a compound produced by condensation (including condensation polymerization) of a hydrolyzate of the compound represented by the formula (1). Means. A siloxane bond is formed by the condensation of silanol groups produced by the hydrolysis of the compound represented by the formula (1). The hydrolyzed condensate of the compound represented by the formula (1) has, for example, a silanol group at the end of the molecular structure.

In the formula (1), the ^{alkyl groups represented by R 1} and R ² may be linear, branched, or cyclic. The alkyl group is preferably an alkyl group having 1 to 6 carbon atoms, more preferably an alkyl group having 1 to 3 carbon atoms, and particularly preferably a methyl group or an ethyl group.

In the formula (1), the ^{alkyl group represented by R 3} may be linear, branched, or cyclic. The alkyl group is preferably an alkyl group having 1 to 6 carbon atoms, more preferably an alkyl group having 1 to 3 carbon atoms, and particularly preferably a methyl group or an ethyl group.

In the formula (1), the alkoxy group represented by R ³ preferably has a carbon number of an alkoxy group is 1 to 6, more preferably an alkoxy group having 1 to 3 carbon atoms, methoxy It is particularly preferably a group or an ethoxy group.

In the formula (1), R ³ is preferably an alkoxy group, more preferably an alkoxy group having 1 to 6 carbon atoms, and having 1 to 3 carbon atoms from the viewpoint of hydrolyzability. It is more preferably an alkoxy group, and particularly preferably a methoxy group or an ethoxy group.

In the formula (1), the divalent linking group represented by L is preferably an alkylene group, a phenylene group, -O-, -COO-, or a combination thereof, and has 1 to 6 carbon atoms. It is more preferably an alkylene group, and particularly preferably an alkylene group having 2 to 4 carbon atoms.

In the formula (1), examples of the functional group represented by Y include the functional group in the above-mentioned alkoxysilane. In the formula (1), the preferred embodiment of the functional group represented by Y is the same as the preferred embodiment of the functional group in the above-mentioned alkoxysilane.

Hereinafter, specific compounds included in the above-mentioned alkoxysilane will be described. However, the alkoxysilane is not limited to the following compounds.

Examples of the alkoxysilane having an epoxy group as a functional group (including the case where the functional group is a glycidyl group or a glycidyloxy group) include 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane (for example,). KBM-303, Shin-Etsu Chemical Industry Co., Ltd.), 3-glycidoxypropylmethyldimethoxysilane (eg KBM-402, Shin-Etsu Chemical Industry Co., Ltd.), 3-glycidoxypropyltrimethoxysilane (eg KBM-403, Shin-Etsu Chemical Industry Co., Ltd.), 3-glycidoxypropylmethyldiethoxysilane (for example, KBE-402, Shin-Etsu Chemical Industry Co., Ltd.), 3-glycidoxypropyltriethoxysilane (for example, KBE-403, Shin-Etsu Chemical Industry Co., Ltd.) Co., Ltd.).

Examples of the alkoxysilane having a vinyl group as a functional group include vinyltrimethoxysilane (for example, KBM-1003, Shin-Etsu Chemical Co., Ltd.), vinyltriethoxysilane (for example, KBE-1003, Shin-Etsu Chemical Co., Ltd.), and the like. And p-styryltrimethoxysilane (for example, KBM-1403, Shin-Etsu Chemical Co., Ltd.).

Examples of the alkoxysilane having an acryloyl group (including the case where the functional group is an acryloyloxy group) as a functional group include 3-acryloxypropyltrimethoxysilane (for example, KBM-5103, Shinetsu Chemical Industry Co., Ltd.). Can be mentioned.

Examples of the alkoxysilane having a methacryloyl group (including the case where the functional group is a methacryloyloxy group) as a functional group include 3-methacryloxypropylmethyldimethoxysilane (for example, KBM-502, Shinetsu Chemical Industry Co., Ltd.). , 3-Methyloxypropyltrimethoxysilane (eg, KBM-503, Shin-Etsu Chemical Industry Co., Ltd.), 3-Methylmethyloxypropylmethyldiethoxysilane (eg, KBE-502, Shin-Etsu Chemical Industry Co., Ltd.), and 3-Methyl. Examples thereof include loxypropyltriethoxysilane (for example, KBE-503, Shin-Etsu Chemical Industry Co., Ltd.).

Examples of the alkoxysilane having an amino group as a functional group include N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane (for example, KBM-602, Shin-Etsu Chemical Industry Co., Ltd.) and N-2- (amino). Ethyl) -3-aminopropyltrimethoxysilane (eg KBM-603, Shinetsu Chemical Industry Co., Ltd.), 3-aminopropyltrimethoxysilane (eg KBM-903, Shinetsu Chemical Industry Co., Ltd.), 3-aminopropyltri Ethoxysilane (eg KBE-903, Shin-Etsu Chemical Industry Co., Ltd.), 3-triethoxysilyl-N- (1,3-dimethyl-butylidene) propylamine (eg KBE-9103P, Shin-Etsu Chemical Industry Co., Ltd.), and Examples thereof include N-phenyl-3-aminopropyltrimethoxysilane (for example, KBM-573, Shin-Etsu Chemical Industry Co., Ltd.).

Examples of the alkoxysilane having an isocyanate group as a functional group include 3-isocyanatepropyltriethoxysilane (for example, KBE-9007N, Shin-Etsu Chemical Co., Ltd.).

Examples of the alkoxysilane having a ureido group as a functional group include 3-ureidopropyltrimethoxysilane (for example, T1915, Tokyo Chemical Industry Co., Ltd.) and 3-ureidopropyltriethoxysilane (for example, U0048, Tokyo Chemical Industry Co., Ltd.). Company).

Examples of the alkoxysilane having a mercapto group as a functional group include 3-mercaptopropylmethyldimethoxysilane (for example, KBM-802, Shin-Etsu Chemical Industry Co., Ltd.) and 3-mercaptopropyltrimethoxysilane (for example, KBM-803, etc.). Shin-Etsu Chemical Industry Co., Ltd.).

Among the above, the alkoxysilanes are 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltrimethoxysilane, and 3-glycidoxypropylmethyl. It is preferably diethoxysilane or 3-glycidoxypropyltriethoxysilane, and more preferably 3-glycidoxypropyltrimethoxysilane.

The inorganic insulating layer may contain one kind alone or two or more kinds of compounds having a silanol structure.

From the viewpoint of insulating properties, the content of the compound having a silanol structure is preferably 5% by mass or more, more preferably 10% by mass or more, and particularly preferably 15% by mass or more. From the viewpoint of chipping resistance, the content of the compound having a silanol structure is preferably 75% by mass or less, more preferably 60% by mass or less, and 50% by mass, based on the total mass of the inorganic insulating layer. The following is particularly preferable.

[Metal oxide]
The inorganic insulating layer preferably contains a metal oxide in addition to the compound having a silanol structure. When the inorganic insulating layer contains a metal oxide, the insulating property can be improved.

Examples of the metal oxide include aluminum oxide, silicon dioxide, iron (II) oxide, iron (III) oxide, copper (I) oxide, and copper (II) oxide. Among the above, the metal oxide is preferably at least one metal oxide selected from the group consisting of aluminum oxide and silicon dioxide from the viewpoint of insulating property and light reflectivity, and is aluminum oxide. Is more preferable.

Examples of commercially available aluminum oxide products include alumina sol-F1000 (Kawaken Fine Chemical Co., Ltd.) and alumina sol-F3000 (Kawaken Fine Chemical Co., Ltd.).

The shape of the metal oxide is not limited. Examples of the shape of the metal oxide include a particle shape and a fibrous shape. The shape of the metal oxide is preferably fibrous. Since the shape of the metal oxide is fibrous, the strength of the inorganic insulating layer can be improved, so that the chipping resistance can be improved.

From the viewpoint of chipping resistance, the average aspect ratio of the metal oxide is preferably 50 or more, more preferably 100 or more, and particularly preferably 300 or more. The average aspect ratio of the metal oxide may be 500 or more, 600 or more, or 700 or more. The upper limit of the aspect ratio of the metal oxide is not limited. The average aspect ratio of the metal oxide is 100,000 or less from the viewpoint of coatability (viscosity) of the composition used for forming the inorganic insulating layer (for example, the inorganic insulating layer forming liquid described later). It is preferably 2,000 or less, more preferably 800 or less, and particularly preferably 800 or less. The average aspect ratio of the metal oxide is an arithmetic average of the aspect ratios of 10 metal oxides arbitrarily selected from the image of the metal oxide. The aspect ratio of the metal oxide is the value obtained by dividing the length of the major axis of the metal oxide by the length of the minor axis of the metal oxide ([length of the major axis] / [length of the minor axis]). .. Images of metal oxides are obtained using a known microscope (eg, scanning electron microscope).

The inorganic insulating layer may contain one kind alone or two or more kinds of metal oxides.

When the inorganic insulating layer contains a metal oxide, the content of the metal oxide is preferably 25% by mass or more, preferably 40% by mass or more, based on the total mass of the inorganic insulating layer from the viewpoint of chipping resistance. It is more preferable that there is, and it is particularly preferable that it is 50% by mass or more. From the viewpoint of insulating properties, the content of the metal oxide is preferably 95% by mass or less, more preferably 90% by mass or less, and 85% by mass or less with respect to the total mass of the inorganic insulating layer. It is particularly preferable to have.

When the inorganic insulating layer contains a metal oxide, the ratio of the content of the compound having a silanol structure to the content of the metal oxide ([content of the compound having a silanol structure] / [content of the metal oxide]) is On a volume basis, it is preferably 0.01 to 0.60, more preferably 0.02 to 0.30, and particularly preferably 0.03 to 0.15. When the ratio of the content of the compound having a silanol structure to the content of the metal oxide is in the above range, the insulating property and the chipping resistance can be improved. In the present disclosure, "the ratio of the area of the compound having a silanol structure to the area of the metal oxide calculated based on the cross-sectional image of the inorganic insulating layer" is referred to as "the content of the compound having a silanol structure to the content of the metal oxide". Considered as a "ratio of quantities". A cross-sectional image of the inorganic insulating layer is obtained using a known microscope (for example, a scanning electron microscope). The area of the metal oxide and the area of the compound having a silanol structure are each calculated by a known image processing method based on a cross-sectional image of the inorganic insulating layer.

[Other ingredients]
The inorganic insulating layer may contain components other than the above-mentioned components (hereinafter, referred to as "other components" in this paragraph). Examples of other components include powdered ceramic components and thickeners for adjusting coatability.

[thickness]
From the viewpoint of insulating properties, the average thickness of the inorganic insulating layer is preferably 2 μm or more, more preferably 4 μm or more, and particularly preferably 6 μm or more. From the viewpoint of chipping resistance, the average thickness of the inorganic insulating layer is preferably 20 μm or less, more preferably 15 μm or less, further preferably less than 10 μm, and particularly preferably 8 μm or less. The average thickness of the inorganic insulating layer is an arithmetic mean of the thickness of the inorganic insulating layer measured at any 10 points in the cross-sectional observation. Cross-section observation is performed using a known microscope (for example, a scanning electron microscope).

[Method of forming an inorganic insulating layer]
Examples of the method for forming the inorganic insulating layer include a method using a liquid containing a material for forming the inorganic insulating layer (hereinafter, may be referred to as “inorganic insulating layer forming liquid”). For example, the inorganic insulating layer can be formed by applying the inorganic insulating layer forming liquid on the metal base material and then drying the inorganic insulating layer forming liquid.

(Inorganic insulation layer forming liquid)
The composition of the inorganic insulating layer forming liquid may be determined according to the composition of the target inorganic insulating layer. When forming an inorganic insulating layer containing at least one compound selected from the group consisting of, for example, a hydrolyzate of alkoxysilane and a hydrolyzed condensate of alkoxysilane as a compound having a silanol structure, an inorganic insulating layer is formed. The liquid preferably contains alkoxysilane as a raw material for a compound having a silanol structure. When the inorganic insulating layer forming liquid contains alkoxysilane, a compound having a silanol structure can be formed through hydrolysis of alkoxysilane or hydrolysis and condensation of alkoxysilane.

For example, by using an inorganic insulating layer forming liquid containing a compound represented by the formula (1) as the alkoxysilane, a hydrolyzate of the compound represented by the formula (1) and a hydrolyzate of the compound represented by the formula (1) can be used as a compound having a silanol structure. An inorganic insulating layer containing at least one compound selected from the group consisting of hydrolyzed condensates of the compound represented by 1) can be formed.

From the viewpoint of the characteristics of the inorganic insulating layer and the coatability of the inorganic insulating layer forming liquid, the inorganic insulating layer forming liquid preferably contains an alkoxysilane and a solvent as raw materials for a compound having a silanol structure. Hereinafter, as an example of a preferable inorganic insulating layer forming liquid, an inorganic insulating layer forming liquid containing alkoxysilane and a solvent will be described.

-Alkoxysilane-
Examples of the alkoxysilane include the alkoxysilane described in the above section "Compound having a silanol structure". The preferred embodiment of the alkoxysilane is the same as the preferred embodiment of the alkoxysilane described in the above section "Compound having silanol structure". Further, as the alkoxysilane, a known silane coupling agent may be used.

The inorganic insulating layer forming liquid may contain one kind alone or two or more kinds of alkoxysilanes.

The content of alkoxysilane in the inorganic insulating layer forming liquid may be determined according to the composition of the target inorganic insulating layer (that is, the content of the compound having a silanol structure in the inorganic insulating layer).

− Solvent −
Examples of the solvent include water and an organic solvent.

Examples of water include ion-exchanged water.

Examples of the organic solvent include ether and alcohol. The organic solvent is preferably alcohol, more preferably ethanol.

The boiling point of the solvent is preferably 110 ° C. or lower, more preferably 100 ° C. or lower, and more preferably 85 ° C., from the viewpoint of forming the inorganic insulating layer and reducing the content of the solvent remaining in the inorganic insulating layer. It is particularly preferable that the temperature is below ° C.

The inorganic insulating layer forming liquid may contain one kind of solvent alone or two or more kinds of solvents.

The content of the solvent in the inorganic insulating layer forming liquid is preferably 40% by mass to 80% by mass, more preferably 50% by mass to 70% by mass, based on the total mass of the inorganic insulating layer forming liquid. ..

-Metal oxide-
When forming an inorganic insulating layer containing a metal oxide, the inorganic insulating layer forming liquid preferably contains a metal oxide. The metal oxide is, for example, as described in the above section “Metal oxide”. The preferred embodiment of the metal oxide is the same as the preferred embodiment of the metal oxide described in the above section “Metal oxide”.

The inorganic insulating layer forming liquid may contain one kind alone or two or more kinds of metal oxides.

The content of the metal oxide in the inorganic insulating layer forming liquid may be determined according to the composition of the target inorganic insulating layer (that is, the content of the metal oxide in the inorganic insulating layer).

-Metal chelate compound-
The inorganic insulating layer forming liquid preferably contains a metal chelate compound. When the inorganic insulating layer forming liquid contains a metal chelate compound, hydrolysis and condensation of alkoxysilane can be promoted.

The metal chelate compound is not limited and may be appropriately selected from known metal chelate compounds. Examples of the metal chelate compound include an aluminum chelate compound, a zirconium chelate compound, a titanium chelate compound, and a tin chelate compound. Among the above, the metal chelate compound is preferably an aluminum chelate compound.

Examples of the aluminum chelate compound include aluminum bis (ethylacetate acetate) mono (acetylacetoneate), aluminum tris (acetylacetoneate), and aluminum ethylacetate acetate diisopropyrate.

Examples of commercially available aluminum chelate compounds include aluminum chelate D (Kawaken Fine Chemical Co., Ltd.), aluminum chelate A (Kawaken Fine Chemical Co., Ltd.), and aluminum chelate CH (Kawaken Fine Chemical Co., Ltd.).

The inorganic insulating layer forming liquid may contain one kind alone or two or more kinds of metal chelate compounds.

The content of the metal chelate compound is preferably 0.01% by mass to 10% by mass, and preferably 0.05% by mass to 8% by mass, based on the total solid content of the inorganic insulating layer forming liquid. More preferably, it is particularly preferably 0.1% by mass to 5% by mass.

-Acid-
The inorganic insulating layer forming liquid preferably contains an acid. When the inorganic insulating layer forming liquid contains an acid, hydrolysis and condensation of alkoxysilane can be promoted.

Examples of the acid include phosphoric acid, nitric acid, hydrochloric acid, sulfuric acid, acetic acid, chloroacetic acid, formic acid, oxalic acid, and p-toluenesulfonic acid.

The inorganic insulating layer forming liquid may contain one kind alone or two or more kinds of acids.

The acid content is preferably 0.01% by mass to 10% by mass, more preferably 0.05% by mass to 8% by mass, based on the total solid content of the inorganic insulating layer forming liquid. , 0.1% by mass to 5% by mass is particularly preferable.

-Preparation method of inorganic insulating layer forming liquid-
Examples of the method for preparing the inorganic insulating layer forming liquid include a method of mixing the above components. In the method for preparing the inorganic insulating layer forming liquid, water and an acid are sequentially added to a liquid containing an alkoxysilane, an organic solvent, a metal oxide if necessary, and a metal chelate compound if necessary, and then obtained. It is preferable to mix the obtained liquids. By the above method, hydrolysis and condensation of alkoxysilane can be promoted.

The mixing temperature is preferably 20 ° C. to 50 ° C., more preferably 30 ° C. to 50 ° C. from the viewpoint of accelerating the reaction.

The mixing time is not limited and may be determined, for example, in the range of 1 hour to 10 hours.

(Applying method)
Examples of the method for applying the inorganic insulating layer forming liquid include screen printing, inkjet printing, electrostatic coating, and electrostatic spraying.

The amount of the inorganic insulating layer forming liquid applied is not limited and may be determined according to the thickness of the target inorganic insulating layer. The coating amount of the inorganic insulating layer forming liquid on the metal substrate (weight after drying), for ^example, may be determined in a range of ^{1g / m 2 ~20g / m 2} .

(Drying method)
Examples of the method for drying the inorganic insulating layer forming liquid include heat drying and blast drying. The drying method is preferably heat drying.

The drying temperature is preferably 30 ° C. to 150 ° C., more preferably 80 ° C. to 150 ° C., and particularly preferably 100 ° C. to 150 ° C.

The drying time is not limited and may be determined according to the heating temperature. The drying time may be determined, for example, in the range of 1 minute to 30 minutes.

<< Inorganic reflective layer >>
The reflective substrate for an LED light emitting element according to the present disclosure has an inorganic reflective layer containing inorganic particles and an inorganic binder on the inorganic insulating layer. When the reflective substrate for an LED light emitting element according to the present disclosure has the inorganic reflective layer, the insulating property can be improved. Further, when the wiring layer described later is provided on the inorganic reflective layer, the adhesion between the inorganic reflective layer and the wiring layer is increased, so that the occurrence of connection failure due to wire bonding can be suppressed. Further, the light reflectance can be improved by having the inorganic reflective layer in the reflective substrate for the LED light emitting element according to the present disclosure.

[Inorganic particles]
The inorganic reflective layer contains inorganic particles. The inorganic particles are not limited, and known inorganic particles can be used. Examples of the inorganic particles include oxide particles (for example, metal oxide particles), hydroxide particles (for example, metal hydroxide particles), and inorganic salt particles (for example, carbonate particles and sulfate particles). Be done.

The refractive index of the inorganic particles is preferably 1.2 to 2.8, preferably 1.5 to 2.0, and particularly preferably 1.5 to 1.8. When the refractive index of the inorganic particles is in the above range, the light reflectance can be improved. The refractive index of the inorganic particles refers to a value measured at 25 ° C. according to "5. Measurement method of solid sample" of "JIS K 0062: 1992". The inorganic reflective layer may contain two or more kinds of inorganic particles having different refractive indexes from each other.

The average particle size of the inorganic particles is preferably 0.1 μm to 15 μm, preferably 0.1 μm to 10 μm, and particularly preferably 0.1 μm to 5 μm. When the average particle size of the inorganic particles is within the above range, the inorganic binder can enter the gap between the inorganic particles and the gap between the inorganic particles and the metal base material in the inorganic reflective layer, so that the inorganic reflective layer And the adhesion between the inorganic reflective layer and the metal base material are improved. The average particle size of the inorganic particles is the arithmetic mean of the particle sizes of the 10 inorganic particles (the length of the major axis of the inorganic particles when the shape of the inorganic particles is not spherical) measured by cross-sectional observation. Cross-section observation is performed using a known microscope (for example, a scanning electron microscope). The inorganic reflective layer may contain two or more kinds of inorganic particles having different average particle sizes.

Among the above, the inorganic particles preferably have a refractive index of 1.5 to 1.8 and an average particle size of 0.1 μm to 5 μm or less. By including the inorganic particles having the above-mentioned refractive index and average particle size in the inorganic reflective layer, the light reflectance of the reflective substrate becomes higher, and in the inorganic reflective layer, the inorganic binder is formed between the inorganic particles. Since it can enter the gap and the gap between the inorganic particles and the metal base material, the strength of the inorganic reflective layer and the adhesion between the inorganic reflective layer and the metal base material are improved.

Specific components constituting the inorganic particles include, for example, aluminum oxide (alumina) (refractive index: 1.65 to 1.76, hereinafter, the numbers in parentheses in this paragraph indicate the refractive index) and hydroxide. Aluminum (1.58 to 1.65 to 1.76), calcium hydroxide (1.57 to 1.6), calcium carbonate (1.58), square stone (1.61), calcium carbonate (1.61) , Light calcium carbonate (1.59), heavy calcium carbonate (1.56), ultrafine calcium carbonate (1.57), gypsum (1.55), calcium sulfate (1.59), marble (1.57) ), Barium sulfate (1.64), Barium carbonate (1.6), Magnesium oxide (1.72), Magnesium carbonate (1.52), Magnesium hydroxide (1.58), Strontium carbonate (1.52) , Khao Linkley (1.56), Baked Clay (1.62), Tarku (1.57), Serisite (1.57), Optical Glass (1.51-1.64), Glass Beads (1.51) ), And titanium dioxide (2.45-2.75).

Among the above, the inorganic particles are preferably at least one kind of inorganic particles selected from the group consisting of aluminum oxide particles, calcium hydroxide particles, barium sulfate particles, and titanium dioxide particles from the viewpoint of light reflectance. , At least one inorganic particle selected from the group consisting of aluminum oxide particles, barium sulfate particles, and titanium dioxide particles.

The shape of the inorganic particles is not limited. Examples of the shape of the inorganic particles include a spherical shape, a polyhedral shape (for example, a dodecahedron shape and a dodecahedron shape), a cube shape, a tetrahedron shape, and a shape having a plurality of uneven or convex protrusions on the surface (hereinafter, "" It may be referred to as "compute toe shape"), plate shape, and needle shape. Among the above, the inorganic particles are preferably spherical, polyhedral, cubic, tetrahedral, or konpeito-shaped from the viewpoint of excellent heat insulating properties, and are easily available and excellent in heat insulating properties. It is more preferable that it is spherical.

The inorganic reflective layer may contain one kind of inorganic particles alone or two or more kinds of inorganic particles.

The content of the inorganic particles is preferably 25% by mass to 95% by mass, preferably 30% by mass to 85% by mass, based on the total mass of the inorganic reflective layer from the viewpoint of thermal conductivity, light reflectance, and chipping resistance. It is more preferably by mass%, and particularly preferably 40% by mass to 80% by mass.

[Inorganic binder]
The inorganic reflective layer contains an inorganic binder. Since the inorganic reflective layer contains the inorganic binder, the strength of the inorganic reflective layer can be improved, so that the chipping resistance can be improved and the occurrence of connection failure due to wire bonding can be suppressed.

The inorganic binder is not limited, and a known inorganic binder can be used. Examples of the inorganic binder include metal phosphates, aluminum chloride, and sodium silicate.

Examples of the metal in the phosphoric acid metal salt include gold (Au), silver (Ag), copper (Cu), aluminum (Al), zirconium (Zr), titanium (Ti), zinc (Zn), and cerium (Ce). ). The metal phosphate salt is preferably aluminum phosphate from the viewpoint of chipping resistance.

The metal phosphate salt may be a commercially available product or a synthetic product prepared in advance by a known method. The metal phosphate salt is, for example, reacting phosphoric acid with an oxide or hydroxide containing a metal (for example, gold hydroxide, silver oxide, copper hydroxide, or aluminum hydroxide) in the presence of water. Can be prepared by.

The sodium silicate is not limited to _{Na 2} SiO ₃ , which is a sodium salt of metasilicic acid, and _{may be Na 4} SiO ₄ , Na ₂ Si ₂ O ₅ , or Na ₂ Si ₄ O ₉ .

Sodium silicate may be a commercially available product or a synthetic product prepared in advance by a known method. Sodium silicate can be prepared, for example, by melting silicon dioxide with sodium carbonate or sodium hydroxide.

Examples of aluminum chloride include anhydrous aluminum chloride, aluminum chloride hexahydrate, and polyaluminum chloride (a polymer of basic aluminum chloride produced by dissolving aluminum hydroxide in hydrochloric acid).

Aluminum chloride may be a commercially available product or a synthetic product prepared in advance by a known method. Aluminum chloride can be prepared, for example, by reacting hydrochloric acid with aluminum hydroxide in the presence of water.

The inorganic binder is preferably at least one inorganic binder selected from the group consisting of aluminum phosphate, aluminum chloride, and sodium silicate. When the inorganic reflective layer contains the above-mentioned inorganic binder, the inorganic binder and the compound having a silanol structure contained in the inorganic insulating layer have a strong interaction with each other, thereby causing the inorganic reflective layer and the inorganic insulating layer to interact with each other. Since the adhesion can be improved, the chipping resistance can be improved.

The inorganic reflective layer may contain one kind alone or two or more kinds of inorganic binders.

The content of the inorganic binder is preferably 5% by mass to 75% by mass, preferably 15% by mass, based on the total mass of the inorganic reflective layer from the viewpoint of thermal conductivity, light reflectance, and chipping resistance. It is more preferably ~ 70% by mass, and particularly preferably 20% by mass to 60% by mass.

The content of the inorganic binder is preferably 5 parts by mass to 100 parts by mass, and more preferably 10 parts by mass to 60 parts by mass with respect to 100 parts by mass of the inorganic particles.

[Other ingredients]
The inorganic reflective layer may contain components other than the above-mentioned components (hereinafter, referred to as "other components" in this paragraph). Examples of other components include a thickener for adjusting the coatability and a protective agent against the plating solution used for the wiring layer forming treatment.

[thickness]
From the viewpoint of light reflectance and insulating properties, the average thickness of the inorganic reflective layer is preferably 20 μm or more, more preferably 40 μm or more, and particularly preferably 50 μm or more. From the viewpoint of chipping resistance, the average thickness of the inorganic reflective layer is preferably 500 μm or less, more preferably 300 μm or less, and particularly preferably 200 μm or less. The average thickness of the inorganic reflective layer is an arithmetic mean of the thickness of the inorganic reflective layer measured at any 10 points in the cross-sectional observation.

The total value of the average thickness of the inorganic insulating layer and the average thickness of the inorganic reflective layer is preferably 30 μm or more, more preferably 40 μm or more, and more preferably 50 μm from the viewpoint of insulating property and light reflectance. The above is particularly preferable. The total value of the average thickness of the inorganic insulating layer and the average thickness of the inorganic reflective layer is preferably 250 μm or less, more preferably 230 μm or less, and 210 μm from the viewpoint of thermal conductivity and chipping resistance. The following is particularly preferable.

[Light reflectance]
The light reflectance of the inorganic reflective layer is preferably 80% or more, more preferably 85% or more, and particularly preferably 90% or more. The light reflectance of the inorganic reflective layer refers to the total reflectance of 380 nm to 780 nm (total average of SPIN mode) measured using a reflection densitometer (CM2600D, Konica Minolta Co., Ltd.).

[Method of forming an inorganic reflective layer]
Examples of the method for forming the inorganic reflective layer include a method using a liquid containing a material for forming the inorganic reflective layer (hereinafter, may be referred to as “inorganic reflective layer forming liquid”). For example, the inorganic reflective layer can be formed by applying the inorganic reflective layer forming liquid on the inorganic insulating layer and then drying the inorganic reflective layer forming liquid.

(Inorganic reflective layer forming liquid)
The inorganic reflective layer forming liquid preferably contains inorganic particles, an inorganic binder, and a solvent.

-Inorganic particles-
The inorganic particles are as described in the section "Inorganic particles" above. The preferred embodiment of the inorganic particles is the same as the preferred embodiment of the metal oxide described in the above section “Inorganic particles”.

The inorganic reflective layer forming liquid may contain one kind alone or two or more kinds of inorganic particles.

The content of the inorganic particles in the inorganic reflective layer forming liquid may be determined according to the composition of the target inorganic reflective layer (that is, the content of the inorganic particles in the inorganic reflective layer).

-Inorganic binder-
The inorganic binder is as described in the section "Inorganic binder" above. The preferred embodiment of the inorganic binder is the same as the preferred embodiment of the metal oxide described in the above section "Inorganic binder".

The inorganic reflective layer forming liquid may contain one kind alone or two or more kinds of inorganic binders.

The content of the inorganic binder in the inorganic reflective layer forming liquid may be determined according to the composition of the target inorganic reflective layer (that is, the content of the inorganic binder in the inorganic reflective layer).

− Solvent −
Examples of the solvent include water and an organic solvent. The solvent is preferably water from the viewpoint of enhancing the coatability and the reactivity of the inorganic binder. Examples of water include ion-exchanged water. Examples of the organic solvent include the organic solvent described in the section "Method for forming an inorganic insulating layer".

The boiling point of the solvent is preferably 110 ° C. or lower, more preferably 100 ° C. or lower, and more preferably 85 ° C., from the viewpoint of forming the inorganic reflective layer and reducing the content of the solvent remaining in the inorganic reflective layer. It is particularly preferable that the temperature is below ° C.

The inorganic reflective layer forming liquid may contain one kind of solvent alone or two or more kinds of solvents.

The content of the solvent in the inorganic reflective layer forming liquid is preferably 10% by mass to 50% by mass, more preferably 15% by mass to 40% by mass, based on the total mass of the inorganic reflective layer forming liquid. ..

-Preparation method of inorganic reflective layer forming liquid-
Examples of the method for preparing the inorganic reflective layer forming liquid include a method of mixing inorganic particles, an inorganic binder, and a solvent. For example, an inorganic reflective layer forming liquid can be prepared by adding inorganic particles to a liquid containing an inorganic binder and a solvent, and then mixing the obtained liquid.

When preparing an inorganic binder, an inorganic reflective layer forming liquid is prepared by adding inorganic particles to a liquid obtained by mixing the raw material of the inorganic binder and a solvent, and then mixing the obtained liquid. May be prepared. For example, an inorganic reflective layer forming liquid containing aluminum phosphate and inorganic particles can be prepared by adding inorganic particles to a liquid containing phosphoric acid, aluminum hydroxide, and water.

The mixing temperature is not limited and may be determined, for example, in the range of 20 ° C to 30 ° C.

The mixing time is not limited and may be determined, for example, in the range of 10 minutes to 3 hours.

(Applying method)
Examples of the method for applying the inorganic reflective layer forming liquid include screen printing, inkjet printing, electrostatic coating, and electrostatic spraying.

The amount of the inorganic reflective layer forming liquid applied is not limited and may be determined according to the target thickness of the inorganic reflective layer. The coating amount of the inorganic reflective layer forming liquid on the inorganic insulating layer (mass after drying), for ^example, may be determined in a range of ^{25g / m 2 ~600g / m 2} .

(Drying method)
Examples of the method for drying the inorganic reflective layer forming liquid include heat drying and blast drying. The drying method is preferably heat drying.

The drying temperature is preferably 30 ° C. to 220 ° C., more preferably 100 ° C. to 220 ° C., and particularly preferably 150 ° C. to 220 ° C.

The drying time is not limited and may be determined according to the heating temperature. The drying time may be determined, for example, in the range of 1 minute to 30 minutes.

As a method for forming the inorganic reflective layer, the method described in paragraph 0038 of JP-A-2015-23244 may be used. The contents of the above publication are incorporated herein by reference.

<< Wiring layer >>
The reflective substrate for an LED light emitting element according to the present disclosure preferably has a wiring layer on the inorganic reflective layer. When the reflective substrate for an LED light emitting element according to the present disclosure has the wiring layer, for example, the LED light emitting element described later and the wiring layer can be electrically connected by wire bonding.

The wiring layer preferably contains a metal from the viewpoint of conductivity. The metal contained in the wiring layer may be a simple substance or an alloy. Examples of the metal include gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), and nickel (Ni). The metal is preferably silver or copper, and more preferably silver, from the viewpoint of low electrical resistance.

The structure of the wiring layer may be a single-layer structure or a multi-layer structure. When the wiring layer has a multi-layer structure, the surface layer (outermost layer) of the wiring layer is preferably a layer containing gold from the viewpoint of ease of wire bonding. Examples of the wiring layer having a multi-layer structure include a wiring layer having a silver layer, a nickel layer, and a gold layer in this order based on the inorganic reflective layer.

The average thickness of the wiring layer is preferably 0.5 μm to 1,000 μm, more preferably 1 μm to 500 μm, and 5 μm to 250 μm from the viewpoint of reliability of conduction and miniaturization of the LED package. It is particularly preferable to have.

The method for forming the wiring layer is not limited, and a known method (for example, plating) can be used. Examples of the method for forming the wiring layer include the methods described in paragraphs 0045 to 0052 of JP2013-62500A. The contents of the above publication are incorporated herein by reference.

<< Thickness >>
The thickness of the reflective substrate for an LED light emitting element according to the present disclosure is preferably in the range of 0.1 mm to 3 mm, preferably in the range of 0.15 mm to 1.5 mm, from the viewpoint of insulation and heat dissipation. Is more preferable, and the range of 0.2 mm to 1 mm is particularly preferable.

<LED package>
The LED package according to the present disclosure includes a reflection substrate for an LED light emitting element according to the present disclosure and an LED light emitting element. According to the LED package according to the present disclosure, an LED package having a reflective substrate for an LED light emitting element, which has high insulation and excellent chipping resistance and can suppress the occurrence of connection failure due to wire bonding, is provided. Can be done.

<< Reflective substrate for LED light emitting element >>
The LED package according to the present disclosure has a reflective substrate for an LED light emitting element according to the present disclosure. The reflective substrate for the LED light emitting element is as described in the above section “Reflective substrate for LED light emitting element”. The preferred embodiment of the reflection substrate for an LED light emitting element in the LED package according to the present disclosure is the same as the preferred embodiment of the reflection substrate for an LED light emitting element described in the above section “Reflective substrate for LED light emitting element”.

When the reflective substrate for the LED light emitting element includes a wiring layer, it is preferable that the wiring layer is electrically connected to the LED light emitting element. Wire bonding is preferable as a method of electrically connecting the wiring layer and the LED light emitting element. Wire bonding is a method of electrically connecting a plurality of parts using conductive wires. The wire bonding method is not limited, and a known method can be used. Wire materials include, for example, aluminum, gold, and copper.

<< LED light emitting element >>
The LED package according to the present disclosure includes an LED light emitting element. The LED light emitting element is not limited as long as it is an element including a semiconductor that emits light by applying a voltage, and a known LED light emitting element can be used.

The LED light emitting element is preferably arranged on the reflective substrate for the LED light emitting element. The LED light emitting element may be arranged on a metal substrate in the reflection substrate for the LED light emitting element, an inorganic insulating layer in the reflection substrate for the LED light emitting element, or an inorganic reflection layer in the reflection substrate for the LED light emitting element. From the viewpoint of heat dissipation, the LED light emitting element is preferably arranged on the metal substrate of the reflective substrate for the LED light emitting element.

Examples of semiconductors include GaAlN, ZnS, ZnSe, SiC, GaP, GaAlAs, AlN, InN, AlInGaP, InGaN, GaN, and AlInGaN.

Examples of the semiconductor structure include a homo structure having a MIS junction, a PIN junction, or a PN junction, a hetero structure, and a double hetero structure.

The emission wavelength of the LED light emitting element can be selected from ultraviolet light to infrared light depending on the type of semiconductor and the mixed crystalliteness of the semiconductor.

The LED package according to the present disclosure preferably has a sealing member on the LED light emitting element. The sealing member is arranged so as to cover the LED light emitting element.

The material of the sealing member is preferably a transparent resin. The transparent resin is also preferably a hard resin in order to protect the blue LED. The transparent resin is also preferably a resin having excellent heat resistance, weather resistance, and light resistance.

The resin is preferably at least one resin selected from the group consisting of epoxy resin, modified epoxy resin, silicone resin, modified silicone resin, acrylate resin, urethane resin, and polyimide resin, and is preferably an epoxy resin and a modified epoxy resin. , A silicone resin, and at least one resin selected from the group consisting of modified silicone resins.

The sealing member contains at least one compound selected from the group consisting of fillers, diffusers, pigments, fluorescent substances, reflective substances, UV absorbers, and antioxidants, depending on the intended function. You may.

For example, a combination of an LED light emitting element and a fluorescent substance can form light of a desired color. Examples of the fluorescent substance include nitride-based phosphors, oxynitride-based phosphors, sialone-based phosphors, and β-sialon-based fluorescent substances that are mainly activated by lanthanoid-based elements such as Eu and Ce; lanthanoids such as Eu. Alkaline earth halogen apatite fluorescent material, alkaline earth metal halogen apatite phosphor, alkaline earth metal aluminate phosphor, alkaline earth silicic acid mainly activated by transition metal elements such as Mn. Salt phosphors, alkaline earth sulfide phosphors, alkaline earth thiogallate phosphors, alkaline earth silicon nitride phosphors, germanate phosphors; rare earth aluminates mainly activated by lanthanoid elements such as Ce. Fluorescent materials, rare earth silicate phosphors; organic complexes mainly activated by lanthanoid-based elements such as Eu can be mentioned. The sealing member may contain one kind alone or two or more kinds of fluorescent substances.

For example, when white light is formed using the LED package according to the present disclosure, for example, fluorescent light emission that emits fluorescence in the visible light region by absorbing the light emitted from the blue LED light emitting element and the LED light emitting element. A method of combining with a body (an example of a fluorescent substance) can be mentioned. According to the above method, the LED package according to the present disclosure can be used as a phosphor-colored white LED package. For example, fluorescence emitted from a fluorescent light emitter that has absorbed blue light emitted from a blue LED light emitting element (yellowish fluorescence) and afterglow of a blue LED light emitting element (that is, blue light that has not been absorbed by the fluorescent light emitting body). ), And white light can be formed.

The above-mentioned light emitting method is a so-called "pseudo-white light emitting type" in which a blue LED light emitting element and a yellow phosphor are combined. As a light emitting method other than the pseudo-white light emitting type, for example, a "ultraviolet to near-ultraviolet light source" that forms white light by combining an ultraviolet to near-ultraviolet LED light emitting element, a red phosphor, a green phosphor, and a blue phosphor. Examples thereof include a "type" and an "RGB light source type" that forms white light by combining a red LED light emitting element, a green LED light emitting element, and a blue LED light emitting element.

Examples of the method for manufacturing the LED package according to the present disclosure include a method of joining an LED light emitting element on a reflective substrate for an LED light emitting element. As a method of joining the LED light emitting element on the reflective substrate for the LED light emitting element, for example, soldering by a reflow method can be mentioned.

The maximum temperature reached when joining an LED light emitting element onto a reflective substrate for an LED light emitting element is preferably 220 ° C. to 350 ° C., more preferably 240 ° C. to 320 ° C., and 260 ° C. to 300 ° C. It is particularly preferable to have. The time for maintaining the maximum temperature reached is preferably 2 seconds to 10 minutes, more preferably 5 seconds to 5 minutes, and particularly preferably 10 seconds to 3 minutes.

The temperature at which the LED light emitting element is mounted by wire bonding is preferably 80 ° C. to 300 ° C., more preferably 90 ° C. to 250 ° C., and particularly preferably 100 ° C. to 200 ° C. The heating time is preferably 2 seconds to 10 minutes, more preferably 5 seconds to 5 minutes, and particularly preferably 10 seconds to 3 minutes.

Hereinafter, the LED package according to the present disclosure will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic cross-sectional view showing an example of the LED package according to the present disclosure. FIG. 2 is a schematic cross-sectional view showing another example of the LED package according to the present disclosure. The components shown by using the same reference numerals in each drawing mean that they are the same components. Descriptions of overlapping components and symbols in the drawings may be omitted. The dimensional ratio in each drawing does not necessarily represent the actual dimensional ratio.

The LED package 100 shown in FIG. 1 includes a reflection substrate 10 for an LED light emitting element and an LED light emitting element 5.

In FIG. 1, the reflective substrate 10 for an LED light emitting element has a metal substrate 1, an inorganic insulating layer 2, an inorganic reflective layer 3, and a wiring layer 4 in this order.

In FIG. 1, the wiring layer 4 is electrically connected to the LED light emitting element 5 via a wire 6.

In FIG. 1, the LED light emitting element 5 is arranged on the gold storage base material 1 of the reflective substrate 10 for the LED light emitting element.

In FIG. 1, the wiring layer 4 and the LED light emitting element 5 may be sealed by a sealing member (not shown) containing a fluorescent substance.

The LED package 110 shown in FIG. 2 includes a reflection substrate 11 for an LED light emitting element and an LED light emitting element 5.

In FIG. 2, the LED light emitting element 5 is arranged on the inorganic reflective layer 3 of the reflective substrate 11 for the LED light emitting element.

In FIG. 2, the wiring layer 4 and the LED light emitting element 5 may be sealed by a sealing member (not shown) containing a fluorescent substance.

Hereinafter, the present disclosure will be described in detail by way of examples, but the present disclosure is not limited thereto. In the following, "part" and "%" are based on mass unless otherwise specified.

<Preparation of inorganic insulating layer forming liquid (1)>
Each of the following components was mixed to obtain a mixture.
-Ethanol (solvent): 46 parts by mass-KBM-403 (raw material of compound having silanol structure (alkoxysilane), Shin-Etsu Chemical Industry Co., Ltd.): 54 parts by mass-Alumina sol-F3000 concentrate (metal oxide, Kawaken Fine Chemicals) Aluminum oxide (alumina sol-F3000) 5% aqueous solution heated and concentrated to a concentration of 85%): 30 parts by mass ・ Aluminum chelate D (metal chelate compound, Kawaken Fine Chemical Co., Ltd.): 1 part by mass

Ion-exchanged water (solvent, 100 parts by mass) is gradually added to the above mixture, and finally acetic acid (100%, 6 parts by mass) is added, and then the mixture is stirred at 40 ° C. for 6 hours to obtain an inorganic insulating layer. The forming liquid (1) was obtained.

<Preparation of inorganic insulating layer forming liquid (2)>
Each of the following components was mixed to obtain a mixture.
-Ethanol (solvent): 46 parts by mass-KBM-403 (raw material of compound having silanol structure (alkoxysilane), Shin-Etsu Chemical Industry Co., Ltd.): 54 parts by mass-Alumina sol-F1000 concentrate (metal oxide, Kawaken Fine Chemicals) Aluminum oxide (alumina sol-F1000) 5% aqueous solution heated and concentrated to a concentration of 85%): 30 parts by mass ・ Aluminum chelate D (metal chelate compound, Kawaken Fine Chemical Co., Ltd.): 1 part by mass

Ion-exchanged water (solvent, 100 parts by mass) is gradually added to the above mixture, and finally acetic acid (100%, 6 parts by mass) is added, and then the mixture is stirred at 40 ° C. for 6 hours to obtain an inorganic insulating layer. The forming liquid (2) was obtained.

<Preparation of inorganic insulating layer forming liquid (3)>
The inorganic insulating layer forming liquid (3) was obtained by the same procedure as the preparation of the inorganic insulating layer forming liquid (1) except that the amount of the alumina sol-F3000 concentrated liquid added was changed to 60 parts by mass.

<Preparation of inorganic insulating layer forming liquid (4)>
The inorganic insulating layer forming liquid (4) was obtained by the same procedure as the preparation of the inorganic insulating layer forming liquid (1) except that the amount of the alumina sol-F3000 concentrated liquid added was changed to 9 parts by mass.

<Preparation of inorganic insulating layer forming liquid (5)>
The inorganic insulating layer forming liquid (5) was obtained by the same procedure as the preparation of the inorganic insulating layer forming liquid (1) except that the addition amount of KBM-403 was changed to 81 parts by mass.

<Preparation of inorganic insulating layer forming liquid (6)>
The inorganic insulating layer forming liquid (6) was obtained by the same procedure as the preparation of the inorganic insulating layer forming liquid (1) except that the addition amount of KBM-403 was changed to 27 parts by mass.

<Preparation of inorganic insulating layer forming liquid (7)>
Each of the following components was mixed to obtain a mixture.
-Ethanol (solvent): 46 parts by mass-KBM-403 (raw material of compound having silanol structure (alkoxysilane), Shin-Etsu Chemical Co., Ltd.): 54 parts by mass

Ion-exchanged water (solvent, 100 parts by mass) is gradually added to the above mixture, and finally acetic acid (100%, 6 parts by mass) is added, and then the mixture is stirred at 40 ° C. for 6 hours to obtain an inorganic insulating layer. The forming liquid (7) was obtained.

<Preparation of inorganic reflective layer forming liquid>
A binder solution (A), a binder solution (B), and a binder solution (C) having the following compositions were prepared, respectively. Then, the inorganic particles (100 g) selected according to the description in Tables 1 and 2 were added to each binder solution (100 g), and then the mixture was stirred to prepare each inorganic reflective layer forming solution. The refractive index, average particle size, and composition of the inorganic particles are as shown in Tables 1 and 2.

[Binder solution (A) (inorganic binder: aluminum phosphate)]
-Phosphoric acid (concentration: 85%, Fujifilm Wako Pure Chemical Industries, Ltd.): 48 g
・ Aluminum hydroxide (Fuji Film Wako Pure Chemical Industries, Ltd.): 11g
・ Water: 41g

[Binder solution (B) (inorganic binder: aluminum chloride)]
-Hydrochloric acid (concentration: 20%, Fujifilm Wako Pure Chemical Industries, Ltd.): 79 g
・ Aluminum hydroxide (Fuji Film Wako Pure Chemical Industries, Ltd.): 11g
・ Water: 10g

[Binder solution (C) (inorganic binder: sodium silicate)]
-Sodium silicate (concentration: 38%, Fujifilm Wako Pure Chemical Industries, Ltd.): 55g
・ Water: 45g

<Examples 1 to 26>
[Manufacturing of reflective substrate]
The reflective substrates of Examples 1 to 26 were produced by the following procedures.

(Metal base material)
The following metal substrates were used as the metal substrates for the reflective substrate. Both sides of each metal substrate were previously degreased with ethanol. Copper, nickel, and SUS were immersed in a 0.5 mol% hydrochloric acid aqueous solution at 25 ° C. for 10 seconds before the degreasing treatment.
-Aluminum: Aluminum base material (average thickness: 0.8 mm, 1050 material, Nippon Light Metal Co., Ltd., thermal conductivity: 250 Wm ^-1 K ^-1 )
-Copper: Copper base material (average thickness: 0.8 mm, Iwasaki Shoten Co., Ltd., thermal conductivity: 350 Wm ^-1 K ^-1 )
-Nickel: Nickel base material (average thickness: 0.8 mm, manufactured by KENIS, Ltd., thermal conductivity: 80 Wm ^-1 K ^-1 )
-SUS: SUS304 base material (stainless steel base material, average thickness: 0.8 mm, Iwasaki Shoten Co., Ltd., thermal conductivity: 15 Wm ^-1 K ^-1 )

(Formation of inorganic insulating layer)
The inorganic insulating layer forming liquid selected according to Tables 1 and 2 was applied to one surface of the metal substrate selected according to Tables 1 and 2 by screen printing. However, the inorganic insulating layer forming liquid was not applied to the portion of the surface of the metal base material on which the LED light emitting element is mounted, but was applied only to the portion where the inorganic reflective layer and the wiring are formed. The metal base material coated with the inorganic insulating layer forming liquid was placed in an oven heated to a temperature of 120 ° C. and dried by heating for 5 minutes to form an inorganic insulating layer on the metal base material. The average thickness of the inorganic insulating layer is shown in Tables 1 and 2.

(Formation of inorganic reflective layer)
On the formed inorganic insulating layer, the inorganic reflective layer forming liquid selected according to the description of Tables 1 and 2 was applied by screen printing. A metal base material having an inorganic insulating layer coated with an inorganic reflective layer forming liquid is placed in an oven heated to a temperature of 200 ° C. and dried by heating for 5 minutes to form an inorganic reflective layer on the inorganic insulating layer. did. The average thickness of the inorganic reflective layer is shown in Tables 1 and 2. The presence of the inorganic binder in the inorganic reflective layer was confirmed by infrared spectroscopy (IR).

(Formation of wiring layer)
A diluted solution (20% by mass) of silver nanoparticle ink (XA-436, Fujikura Kasei Co., Ltd.) was applied onto the formed inorganic reflective layer using an inkjet device (DMP-2831, manufactured by FUJIFILM Corporation). Ag wiring (wiring width: 100 μm) was formed by drip in the pattern of the wiring layer 4 shown in 1. Next, the entire reflective substrate was pressed with a roller to flatten the surface of the Ag wiring, and then a Ni layer was formed on the Ag wiring. Specifically, an electroless nickel plating solution (ICP-Nicolon GM (NP), Okuno Pharmaceutical Industry Co., Ltd.) is used for a reflective substrate having Ag wiring, and the temperature is 75 ° C. and the pH is 7.5. A Ni layer (thickness: 4 μm) was formed on the flattened Ag wiring by the immersion treatment for 25 minutes. The reflective substrate after the immersion treatment was carefully washed with pure water. Next, a replacement electroless gold plating solution (electric noble AU, Okuno Pharmaceutical Industry Co., Ltd.) was used to form an Au layer on the Ni layer, and then a reduction electroless gold plating solution (self-gold OKT-IT, Okuno Pharmaceutical Industry Co., Ltd.) was used. Co., Ltd.) was used to increase the thickness of the Au layer to 0.1 μm. After any of the treatments, the reflective substrate was carefully washed with pure water.

<Comparative example 1>
A reflective substrate was produced by the same procedure as in Example 5 except that the inorganic insulating layer was not formed.

<Comparative example 2>
A reflective substrate was produced by the same procedure as in Example 5 except that the inorganic reflective layer forming solution prepared by the following procedure was used instead of the inorganic reflective layer forming solution used in Example 5.

The inorganic reflective layer forming liquid used in Comparative Example 2 was prepared by adding the inorganic particles (100 g) shown in Table 2 to water (100 g) and then stirring.

<Comparative example 3>
A reflective substrate was produced by the same procedure as in Example 1 except that the inorganic reflective layer was not formed.

<Comparative example 4>
A reflective substrate was produced by the same procedure as in Example 5 except that the inorganic insulating layer was not formed and the inorganic reflective layer was formed on one surface of the metal substrate.

<Comparative example 5>
The procedure is the same as in Example 15 except that an anodic oxide film formed on an aluminum substrate by the following method is applied as the inorganic insulating layer instead of the inorganic insulating layer formed by using the inorganic insulating layer forming liquid. To prepare a reflective substrate.

(Anodized film)
The aluminum substrate was connected to the anode and then immersed in a 0.3 mol% aqueous sulfuric acid solution at 15 ° C. Anodized film (inorganic insulating layer) was formed on the surface of the aluminum base material by subjecting the aluminum base material immersed in the sulfuric acid aqueous solution to anodizing at 25 V for 30 minutes at a constant voltage. The anodic oxide film is an inorganic insulating layer containing no compound having a silanol structure. In the anodizing treatment, carbon was used as the negative electrode.

<Evaluation>
[Light reflectance]
With respect to the produced reflective substrate, the total reflectance of 380 nm to 780 nm (total average of SPIN mode) was measured using a reflection densitometer (CM2600D, Konica Minolta Co., Ltd.). The results are shown in Tables 1 and 2.

<Withstand voltage (insulation)>
Insulation of the produced reflective substrate between the surface of the wiring layer and the surface opposite to the surface on which the inorganic insulating layer of the metal base material is arranged according to the method of JIS standard (JIS C2110-1: 2016). The breakdown voltage was measured. The results are shown in Tables 1 and 2.

<Junction temperature (heat dissipation)>
As shown in FIG. 3, 10 (2 in series × 5 in parallel) LED light emitting elements (output: 0.1 W) were mounted on the produced reflective substrate by wire bonding. Each LED light emitting element was continuously lit with an output of 12 V, and the temperature of the surface of the wiring layer 30 seconds after the start of lighting was measured. The results are shown in Tables 1 and 2.

<Wire bond failure rate>
According to the method described in the above-mentioned method for measuring the junction temperature, 100 reflective substrates on which the LED light emitting element was mounted were produced by wire bonding. Next, the LED light emitting element on each reflective substrate was turned on, and the failure rate was measured. Specifically, for each reflective substrate, the reflective substrate in which all 10 LED light emitting elements are lit without any problem is accepted, and the reflective substrate in which even one is not lit is rejected, and the failure rate (reflection judged to be rejected) is rejected. The ratio of substrates) was calculated. The results are shown in Tables 1 and 2.

<Chipping resistance>
The cut surfaces of the inorganic insulating layer and the inorganic reflective layer after cutting the produced reflective substrate with a dicer (DAD324, DISCO Co., Ltd., rotation speed: 10,000 min ^{-1) were observed visually and by an optical microscope (50 times).} .. Chipping resistance was evaluated according to the following criteria. Of the following criteria, A or B was accepted. The results are shown in Tables 1 and 2.
A: No layer chipping is visible visually or by light microscopy.
B: The chipping of the layer is not visually visible and is only visible with a microscope.
C: Chips in the layer are visible visually and by light microscopy.
D: The layer is peeled off.

The item of "Si / MOx" described in each table represents the ratio (volume basis) of the content of the compound having a silanol structure to the content of the metal oxide.

From Tables 1 to 2, Examples 1 to 26 have higher insulation properties and excellent chipping resistance than Comparative Examples 1 to 5, and can suppress the occurrence of connection failure due to wire bonding. all right.

1: Metal substrate 2: Inorganic insulating layer 3: Inorganic reflective layer 4: Wiring layer 5: LED light emitting element 6: Wire 10, 11: Reflective substrate for LED light emitting element 100, 110: LED package

Claims (11)

With a metal substrate having a thermal conductivity of 10 Wm ^-1 K ^{-1 or more,}
An inorganic insulating layer containing a compound having a silanol structure on the metal substrate,
On the inorganic insulating layer, an inorganic reflective layer containing inorganic particles and an inorganic binder, and
Reflective substrate for LED light emitting element having. The reflective substrate for an LED light emitting element according to claim 1, wherein the inorganic insulating layer contains a fibrous metal oxide. The reflective substrate for an LED light emitting device according to claim 2, wherein the ratio of the content of the compound having a silanol structure to the content of the metal oxide is 0.03 to 0.15 on a volume basis. The refractive index of the inorganic particles is 1.5 to 1.8, and the refractive index is 1.5 to 1.8.
The average particle size of the inorganic particles is 0.1 μm to 5 μm.
The invention according to any one of claims 1 to 3, wherein the inorganic binder is at least one inorganic binder selected from the group consisting of aluminum phosphate, aluminum chloride, and sodium silicate. Reflective substrate for LED light emitting element. The reflective substrate for an LED light emitting element according to any one of claims 1 to 4, wherein the average thickness of the inorganic reflective layer is 40 μm to 200 μm. The reflective substrate for an LED light emitting element according to any one of claims 1 to 5, wherein the average thickness of the inorganic insulating layer is 2 μm or more and less than 10 μm. The reflective substrate for an LED light emitting element according to any one of claims 1 to 6, wherein the average thickness of the inorganic insulating layer and the total value of the average thickness of the inorganic reflective layer are 40 μm to 210 μm. The reflective substrate for an LED light emitting element according to any one of claims 1 to 7, wherein the metal substrate is an aluminum substrate, a copper substrate, a nickel substrate, or a stainless steel substrate. The compound having a silanol structure is at least one selected from the group consisting of a hydrolyzate of a compound represented by the following formula (1) and a hydrolyzate condensate of a compound represented by the following formula (1). The reflective substrate for an LED light emitting element according to any one of claims 1 to 8, which is a compound.

In formula (1), R ¹ and R ² each independently represent an alkyl group, R ³ represents an alkyl group or an alkoxy group, L represents a divalent linking group, and Y represents a divalent linking group. , Represents a functional group. The reflective substrate for an LED light emitting element according to any one of claims 1 to 9, which has a wiring layer on the inorganic reflective layer. The reflective substrate for an LED light emitting element according to any one of claims 1 to 10.
LED light emitting element and
LED package with.

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