JP2021048392A5 - - Google Patents

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JP2021048392A5
JP2021048392A5 JP2020149165A JP2020149165A JP2021048392A5 JP 2021048392 A5 JP2021048392 A5 JP 2021048392A5 JP 2020149165 A JP2020149165 A JP 2020149165A JP 2020149165 A JP2020149165 A JP 2020149165A JP 2021048392 A5 JP2021048392 A5 JP 2021048392A5
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mass
melting point
alloy
low melting
bonding member
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Claims (9)

Ｓｎ－Ｂｉ－Ｉｎ三元状態図で、Ｓｎがｘ質量％、Ｂｉがｙ質量％、Ｉｎがｚ質量％である点を（ｘ、ｙ、ｚ）とするとき、
点１（１、６９、３０）、点２（２６、５２、２２）、点３（４０、１０、５０）、点４（１、５７、４２）の４点を頂点とする四角形の範囲内であり、融点が６０～１１０℃であるＳｎ－Ｂｉ－Ｉｎ合金を含み、
前記Ｓｎ－Ｂｉ－Ｉｎ合金が、Ｓｎ、Ｂｉ、およびＩｎの濃度が異なる複数の層を有する積層めっき層を有するＳｎ－Ｂｉ－Ｉｎ系低融点接合部材。 In the Sn-Bi-In ternary phase diagram, where (x, y, z) is a point where Sn is x mass%, Bi is y mass%, and In is z mass%.
Within the range of the quadrangle whose vertices are the four points of point 1 (1, 69, 30), point 2 (26, 52, 22), point 3 (40, 10, 50), and point 4 (1, 57, 42). And contains a Sn—Bi—In alloy having a melting point of 60 to 110 ° C.
The Sn-Bi-In alloy is a Sn-Bi-In-based low melting point bonding member having a laminated plating layer having a plurality of layers having different concentrations of Sn, Bi, and In . 前記Ｓｎ－Ｂｉ－Ｉｎ合金が、Ａｇ、Ｃｕ、Ｎｉ、Ｚｎ、およびＳｂからなる群から選択される１以上の混合成分を含み、前記Ｓｎ－Ｂｉ－Ｉｎ合金における前記混合成分の合計質量が０．００１～３．０質量％である請求項１記載のＳｎ－Ｂｉ－Ｉｎ系低融点接合部材。 The Sn—Bi—In alloy contains one or more mixed components selected from the group consisting of Ag, Cu, Ni, Zn, and Sb, and the total mass of the mixed components in the Sn—Bi-In alloy is 0. The Sn-Bi-In-based low melting point bonding member according to claim 1, which is 001 to 3.0% by mass. アンダーメタルとしてＴｉ、Ｎｉ、Ｃｕ、Ａｕ、Ｓｎ、Ａｇ、Ｃｒ、Ｐｄ、Ｐｔ、Ｗ、Ｃｏ、ＴｉＷ、ＮｉＰ、ＮｉＢ、ＮｉＣｏ、およびＮｉＶからなる群から選択される１以上のアンダーメタルを成膜したものの上に前記Ｓｎ－Ｂｉ－Ｉｎ合金が配置される請求項１または２に記載のＳｎ－Ｂｉ－Ｉｎ系低融点接合部材。 As the undermetal, one or more undermetals selected from the group consisting of Ti, Ni, Cu, Au, Sn, Ag, Cr, Pd, Pt, W, Co, TiW, NiP, NiB, NiCo, and NiV are formed. The Sn-Bi-In-based low melting point bonding member according to claim 1 or 2, wherein the Sn-Bi-In alloy is arranged on the above-mentioned material. 前記Ｓｎ－Ｂｉ－Ｉｎ合金が、ＳｎとＢｉとＩｎとの合計を１００質量％としたとき、Ｓｎを１５～１９質量％、Ｂｉを４３～５１質量％、Ｉｎを３０～４２質量％含む組成である請求項１～３のいずれかに記載のＳｎ－Ｂｉ－Ｉｎ系低融点接合部材。 The composition of the Sn-Bi-In alloy contains 15 to 19% by mass of Sn, 43 to 51% by mass of Bi, and 30 to 42% by mass of In, when the total of Sn, Bi and In is 100% by mass. The Sn-Bi-In-based low melting point bonding member according to any one of claims 1 to 3. ＳｎとＢｉとＩｎとの合計を１００質量％としたとき、Ｓｎを１５～１９質量％、Ｂｉを４３～５１質量％、Ｉｎを３０～４２質量％含む組成であり、融点が６０～１１０℃であるＳｎ－Ｂｉ－Ｉｎ合金を含むＳｎ－Ｂｉ－Ｉｎ系低融点接合部材。When the total of Sn, Bi and In is 100% by mass, the composition contains 15 to 19% by mass of Sn, 43 to 51% by mass of Bi and 30 to 42% by mass of In, and has a melting point of 60 to 110 ° C. A Sn—Bi—In based low melting point bonding member containing a Sn—Bi—In alloy. 請求項１～４のいずれかに記載のＳｎ－Ｂｉ－Ｉｎ系低融点接合部材の前記積層めっき層を、加熱リフローさせてなるＳｎ－Ｂｉ－Ｉｎ合金を含むバンプを有するＳｎ－Ｂｉ－Ｉｎ系低融点接合部材。 Sn-Bi having a bump containing a Sn-Bi-In alloy obtained by heating and reflowing the laminated plating layer of the Sn-Bi-In low melting point bonding member according to any one of claims 1 to 4. -In-based low melting point bonding member. 大きさが１ｍｍ以下である、微小金属ボール、導電性の金属の被覆層を有する微小樹脂ボール、はんだ合金の被覆層を有する微小樹脂ボール、および微小ピン部材からなる群から選択されるいずれかのコア材の表層に前記Ｓｎ－Ｂｉ－Ｉｎ合金を有する微小部材を有する請求項１～６のいずれかに記載のＳｎ－Ｂｉ－Ｉｎ系低融点接合部材。 One selected from the group consisting of micrometal balls having a size of 1 mm or less, microresin balls having a conductive metal coating layer, microresin balls having a solder alloy coating layer, and micropin members. The Sn—Bi—In-based low melting point bonding member according to any one of claims 1 to 6, which has a micromember having the Sn—Bi—In alloy on the surface layer of the core material. 導電性接合部上に前記微小部材が実装された請求項７に記載の低融点接合部材。 The low melting point joining member according to claim 7, wherein the minute member is mounted on the conductive joining portion. 請求項１～８のいずれかに記載のＳｎ－Ｂｉ－Ｉｎ系低融点接合部材を有することを特徴とする半導体電子回路。 A semiconductor electronic circuit comprising the Sn—Bi—In-based low melting point bonding member according to any one of claims 1 to 8.
JP2020149165A 2019-09-11 2020-09-04 Sn-Bi-In system low melting point bonding member, micro member and semiconductor electronic circuit, bump manufacturing method and semiconductor electronic circuit mounting method Active JP7091406B2 (en)

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JP7091405B2 (en) * 2019-09-11 2022-06-27 株式会社新菱 Sn-Bi-In system low melting point bonding member and its manufacturing method, semiconductor electronic circuit and its mounting method
JP7080939B2 (en) * 2020-09-04 2022-06-06 株式会社新菱 Low melting point bonding member and its manufacturing method, semiconductor electronic circuit and its mounting method
CN116079062A (en) 2023-02-20 2023-05-09 福州大学 Ternary Bi-In-Sn nano alloy material and liquid-phase ultrasonic preparation method thereof

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US5344607A (en) * 1993-06-16 1994-09-06 International Business Machines Corporation Lead-free, high tin, ternary solder alloy of tin, bismuth, and indium
TW369451B (en) * 1996-05-10 1999-09-11 Ford Motor Co Solder composition and method of using to interconnect electronic components to circuits on thermoplastic substrates
JP2001219267A (en) * 2000-02-09 2001-08-14 Nippon Macdermid Kk Method for forming tin-indium-bismuth solder alloy plating layer
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