JP2021048200A5 - Resistivity measuring instrument, semiconductor device manufacturing method, and resistivity measuring method - Google Patents

Resistivity measuring instrument, semiconductor device manufacturing method, and resistivity measuring method Download PDF

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JP2021048200A5
JP2021048200A5 JP2019168864A JP2019168864A JP2021048200A5 JP 2021048200 A5 JP2021048200 A5 JP 2021048200A5 JP 2019168864 A JP2019168864 A JP 2019168864A JP 2019168864 A JP2019168864 A JP 2019168864A JP 2021048200 A5 JP2021048200 A5 JP 2021048200A5
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probe
measured
resistivity
measuring instrument
section
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JP7374682B2 (en
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Claims (13)

被測定物が載置される台と、
前記被測定物に複数の探針を接触させるプローブと、
前記プローブを水平方向に移動させる水平駆動部と、
前記プローブを上下方向に動作させる上下駆動部と、
前記被測定物と前記プローブの押し込み量を測定する変位計と、
前記水平駆動部により前記プローブを前記被測定物の測定位置に移動させ、前記上下駆動部により前記被測定物に前記プローブに接触させ、前記変位計により前記プローブが前記被測定物に押し込まれる量を実測し、この実測値と任意の設定値と比較し、誤差が閾値外の場合は、該誤差を補正するように制御する制御部と、
を備える抵抗率測定器。
a table on which the object to be measured is placed;
a probe that brings a plurality of probes into contact with the object to be measured;
a horizontal driving unit for horizontally moving the probe;
a vertical driving unit that vertically moves the probe;
a displacement meter that measures the amount of pushing of the object to be measured and the probe;
The horizontal driving unit moves the probe to the measurement position of the object to be measured, the vertical driving unit brings the probe into contact with the object to be measured, and the amount by which the probe is pushed into the object to be measured by the displacement gauge is measured, the measured value is compared with an arbitrary set value, and if the error is outside the threshold, the control unit controls to correct the error;
A resistivity meter with
前記制御部は、前記複数の探針のうちの一つの第一探針と前記複数の探針のうちの他の一つの第二探針との間の電圧値に応じて前記測定位置が基準位置か判定するよう構成されている請求項1記載の抵抗率測定器。The controller controls the measurement position as a reference according to a voltage value between a first probe out of the plurality of probes and a second probe out of the plurality of probes. 2. The resistivity meter of claim 1, wherein the resistivity meter is configured to determine position. 前記制御部は、前記第一探針と前記第二探針の間の電圧値が閾値内であれば前記測定位置を基準位置に設定するよう構成されている請求項2記載の抵抗率測定器。3. The resistivity measuring instrument according to claim 2, wherein said control unit is configured to set said measurement position to a reference position if the voltage value between said first probe and said second probe is within a threshold value. . 前記制御部は、前記第一探針と前記第二探針の間の電圧値が閾値外であれば、前記プローブの下降を再実行するように構成されている請求項2記載の抵抗率測定器。3. The resistivity measurement according to claim 2, wherein the control unit is configured to re-execute the descent of the probe if the voltage value between the first probe and the second probe is outside the threshold value. vessel. 前記制御部は、前記プローブの下降の再実行を所定回数実行しても、前記探針と前記探針の間の電圧値が閾値外であれば、抵抗率測定を停止するように構成されている請求項4記載の抵抗率測定器。The control unit is configured to stop the resistivity measurement if the voltage value between the probes is outside the threshold value even if the downward movement of the probe is re-executed a predetermined number of times. 5. The resistivity measuring instrument of claim 4. 前記制御部は、前記上下駆動部を昇降させて、前記押し込み量を調整するよう構成されている請求項1記載の抵抗率測定器。2. The resistivity measuring instrument according to claim 1, wherein the control unit is configured to move the vertical driving unit up and down to adjust the pushing amount. 前記上下駆動部は、所定の重りを有するプローブを取り付け部と、モータ部と、上下駆動カム部と、カム受け部と、を少なくとも含む請求項1記載の抵抗率測定器。2. The resistivity measuring instrument according to claim 1, wherein the vertical drive section includes at least a probe attachment section having a predetermined weight, a motor section, a vertical drive cam section, and a cam receiving section. 前記制御部は、前記上下駆動カム部の回転角度を調整するよう構成されている請求項7記載の抵抗率測定器。8. The resistivity measuring instrument according to claim 7, wherein the control section is configured to adjust the rotation angle of the vertical drive cam section. 更に、表示部を備え、Furthermore, a display unit is provided,
前記制御部は、前記上下駆動カム部の回転角度を調整するよう構成されている請求項7記載の抵抗率測定器。8. The resistivity measuring instrument according to claim 7, wherein the control section is configured to adjust the rotation angle of the vertical drive cam section.
前記被測定物は、シリコンウェーハを含むウェーハである請求項1記載の抵抗率測定器。2. A resistivity measuring instrument according to claim 1, wherein said object to be measured is a wafer including a silicon wafer. 前記制御部は、シリコンウェーハの抵抗率、ウェーハ表面に形成したエピタキシャルウェーハの抵抗率、表面から不純物を拡散又は注入した場合の拡散層又は注入層のシート抵抗または表面に生成した金属膜のシート抵抗のうち少なくとも一つを測定することが可能に構成されている請求項1記載の抵抗率測定器。The control unit controls the resistivity of a silicon wafer, the resistivity of an epitaxial wafer formed on the wafer surface, the sheet resistance of a diffusion layer or an injection layer when impurities are diffused or implanted from the surface, or the sheet resistance of a metal film formed on the surface. 2. The resistivity measuring instrument according to claim 1, which is configured to be able to measure at least one of 被測定物が載置される台と、前記被測定物に複数の探針を接触させるプローブと、前記プローブを水平方向に移動させる水平駆動部と、前記プローブを上下方向に動作させる上下駆動部と、前記被測定物と前記プローブの押し込み量を測定する変位計と、前記水平駆動部により前記プローブを前記被測定物の測定位置に移動させ、前記上下駆動部により前記被測定物に前記プローブに接触させ、前記変位計により前記プローブが前記被測定物に押し込まれる量を実測し、この実測値と任意の設定値と比較し、誤差が閾値外の場合は、該誤差を補正するように制御する制御部と、を備える抵抗率測定器により、前記被測定物の抵抗率またはシート抵抗を測定する工程と、
測定した前記抵抗率または前記シート抵抗に基づいて半導体製造装置のプロセス条件を
設定する工程と、
設定されたプロセス条件に基づいて半導体ウェーハを処理する工程と、
を備えた半導体装置の製造方法。
A table on which an object to be measured is placed, a probe for bringing a plurality of probes into contact with the object to be measured, a horizontal driving section for horizontally moving the probe, and a vertical driving section for vertically moving the probe. a displacement gauge for measuring the amount of pushing of the object to be measured and the probe; and the horizontal drive unit moving the probe to a measurement position on the object to be measured, and the vertical drive unit moving the probe to the object to be measured. , the displacement gauge actually measures the amount by which the probe is pushed into the object to be measured, compares this measured value with an arbitrary set value, and if the error is outside the threshold, corrects the error a step of measuring the resistivity or sheet resistance of the object to be measured by a resistivity measuring instrument comprising a control unit for controlling;
setting process conditions of a semiconductor manufacturing apparatus based on the measured resistivity or sheet resistance;
processing a semiconductor wafer based on set process conditions;
A method of manufacturing a semiconductor device comprising
被測定物が載置される台と、前記被測定物に複数の探針を接触させるプローブと、前記プローブを水平方向に移動させる水平駆動部と、前記プローブを上下方向に動作させる上下駆動部と、前記被測定物と前記プローブの押し込み量を測定する変位計と、前記水平駆動部により前記プローブを前記被測定物の測定位置に移動させ、前記上下駆動部により前記被測定物に前記プローブに接触させ、前記変位計により前記プローブが前記被測定物に押し込まれる量を実測し、この実測値と任意の設定値と比較し、誤差が閾値外の場合は、該誤差を補正するように制御する制御部と、を備えている抵抗率測定器により、前記被測定物の抵抗率またはシート抵抗を測定する工程と、A table on which an object to be measured is placed, a probe for bringing a plurality of probes into contact with the object to be measured, a horizontal driving section for horizontally moving the probe, and a vertical driving section for vertically moving the probe. a displacement gauge for measuring the amount of pushing of the object to be measured and the probe; and the horizontal drive unit moving the probe to a measurement position on the object to be measured, and the vertical drive unit moving the probe to the object to be measured. , the displacement gauge actually measures the amount by which the probe is pushed into the object to be measured, compares this measured value with an arbitrary set value, and if the error is outside the threshold, corrects the error a step of measuring the resistivity or sheet resistance of the object to be measured by a resistivity measuring instrument comprising a control unit for controlling;
を有する抵抗率測定方法。A resistivity measurement method having
JP2019168864A 2019-09-17 2019-09-17 Resistivity measuring instrument, semiconductor device manufacturing method, and resistivity measuring method Active JP7374682B2 (en)

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JP2003121459A (en) 2001-10-15 2003-04-23 Shimadzu Corp Electric characteristic measuring device and measuring method
JP2005072143A (en) 2003-08-21 2005-03-17 Tokyo Seimitsu Co Ltd Probe unit
JP2005311009A (en) 2004-04-21 2005-11-04 Kokusai Electric Alhpa Co Ltd Semiconductor wafer resistivity measuring device
JP4809594B2 (en) * 2004-08-02 2011-11-09 東京エレクトロン株式会社 Inspection device
CN100581984C (en) * 2007-12-28 2010-01-20 中国科学院上海微系统与信息技术研究所 Micro-mechanism testing probe card based on electroplating technique and manufacturing method thereof
JP2009276215A (en) * 2008-05-15 2009-11-26 Tokyo Electron Ltd Probe apparatus and method for correcting contact position
JP2010038699A (en) 2008-08-04 2010-02-18 Hitachi Kokusai Denki Engineering:Kk Measurement current value determining method and four-probe resistivity measuring apparatus
JP5463543B2 (en) 2009-03-24 2014-04-09 株式会社国際電気セミコンダクターサービス Semiconductor wafer resistivity measuring apparatus and measuring method
JP6045842B2 (en) 2012-07-31 2016-12-14 株式会社国際電気セミコンダクターサービス Resistivity measuring apparatus and method
TW201435363A (en) * 2013-03-13 2014-09-16 Hon Hai Prec Ind Co Ltd Device and apparatus for testing electronic device
CN203561731U (en) * 2013-10-11 2014-04-23 康德瑞恩电磁技术(苏州)有限公司 Multifunctional testing mechanism for solenoid valve

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