JP2021040162A - Substrate liquid treatment device, substrate liquid treatment method and storage medium - Google Patents

Abstract

To provide a substrate liquid treatment device useful for preventing treatment liquids from entering a nozzle for supplying a gas to the treatment liquids.SOLUTION: A substrate liquid treatment device A1 comprises: a treatment tank 41; a substrate lifting mechanism 36; a treatment liquid supply part 44 for supplying treatment liquids 43 to inside the treatment tank 41; a treatment liquid discharge part 67 for discharging the treatment liquids 43 from inside the treatment tank 41; gas nozzles 70 for discharging a gas at a lower part of the treatment tank 41; a gas supply part 89 for supplying a gas to the gas nozzles 70; and a control part 7 for controlling the gas supply part 89 so as to increase gas supply quantity during rising of a liquid level of the treatment liquids 43 from a first height H1 under the gas nozzles 70 to a second height H2 capable of immersing a substrate 8 and decrease gas supply quantity during lowering of the liquid level from the second height H2 to the first height H1.SELECTED DRAWING: Figure 2

Description

The present disclosure relates to a substrate liquid treatment apparatus, a substrate liquid treatment method, and a storage medium.

Patent Document 1 describes an overflow tank, a pump that circulates the etching solution in the tank, a heater that heats the etching solution in the tank to a constant temperature, a temperature controller that controls the temperature, and the inside of the bottom of the tank. A wet etching processing apparatus including a frame for fixing a wafer cassette to a provided dispersion plate and a bubbler for bubbling the etching solution in a tank with nitrogen is disclosed.

Japanese Unexamined Patent Publication No. 07-58078

It is desired to further improve the uniformity of substrate processing between a plurality of substrates and in the plane of a single substrate. The supply state of the gas for bubbling described above affects the ascending speed of the treatment liquid in each part in the treatment tank, and thus affects the uniformity of the substrate treatment. One of the factors that destabilize the gas supply state is the ingress of the treatment liquid into the gas supply nozzle.

Therefore, an object of the present disclosure is to provide a substrate liquid treatment apparatus, a substrate liquid treatment method, and a storage medium effective for preventing the treatment liquid from entering the nozzle that supplies gas to the treatment liquid.

The substrate liquid treatment apparatus according to one aspect of the present disclosure includes a treatment tank for accommodating the treatment liquid and the substrate, a transport unit for immersing the substrate in the treatment liquid in the treatment tank, and a treatment liquid for supplying the treatment liquid into the treatment tank. A supply unit, a processing liquid discharge unit that discharges the processing liquid from the processing tank, a gas nozzle that discharges gas at the lower part of the processing tank, a gas supply unit that supplies gas to the gas nozzle, and a first unit below the gas nozzle. The treatment liquid supply unit is controlled so that the treatment liquid is supplied to the treatment tank from the height until the liquid level rises to the second height at which the substrate can be immersed, and the liquid level is at the second height or higher. The transport unit is controlled so that the substrate is immersed in the treatment liquid in this state, and the treatment liquid discharge unit is discharged so that the treatment liquid is discharged from the treatment tank until the liquid level drops from the second height to the first height. Control and increase the gas supply while the liquid level rises from the first height to the second height, and increase the gas supply while the liquid level falls from the second height to the first height. It is provided with a control unit configured to control the gas supply unit and to execute the gas supply unit.

According to the present disclosure, it is possible to provide a substrate liquid treatment apparatus, a substrate liquid treatment method, and a storage medium that are effective in preventing the treatment liquid from entering the nozzle that supplies gas to the treatment liquid.

It is a top view which shows typically the substrate liquid processing system. It is a schematic diagram of an etching processing apparatus. It is a top view of the processing tank. It is an enlarged view of a gas nozzle. It is the disassembly of the gas nozzle. It is a block diagram which shows the functional structure of the control part. It is a flowchart of a substrate processing procedure. It is a flowchart of the filling procedure of a processing liquid. It is a flowchart of a nozzle cleaning procedure. It is a flowchart which shows the dipping process procedure. It is a flowchart which shows the control procedure of a gas supply amount. It is a flowchart of the discharge procedure of a processing liquid.

Hereinafter, embodiments will be described in detail with reference to the drawings. In the description, the same elements or elements having the same function are designated by the same reference numerals, and duplicate description will be omitted.

As shown in FIG. 1, the substrate liquid processing system 1A includes a carrier loading / unloading unit 2, a lot forming unit 3, a lot loading unit 4, a lot transport unit 5, a lot processing unit 6, and a control unit 7. Has.

Of these, the carrier loading / unloading section 2 carries in / out the carrier 9 in which a plurality of (for example, 25) substrates (silicon wafers) 8 are vertically arranged and housed in a horizontal posture.

The carrier loading / unloading section 2 includes a carrier stage 10 on which a plurality of carriers 9 are placed, a carrier transport mechanism 11 for transporting the carriers 9, carrier stocks 12 and 13 for temporarily storing the carriers 9, and the carrier stocks 12 and 13. A carrier mounting table 14 on which the carrier 9 is mounted is provided. Here, the carrier stock 12 is temporarily stored before the substrate 8 to be a product is processed by the lot processing unit 6. Further, the carrier stock 13 is temporarily stored after the substrate 8 to be a product is processed by the lot processing unit 6.

Then, the carrier loading / unloading section 2 transports the carrier 9 carried into the carrier stage 10 from the outside to the carrier stock 12 and the carrier mounting table 14 using the carrier transport mechanism 11. Further, the carrier loading / unloading section 2 transports the carrier 9 mounted on the carrier mounting table 14 to the carrier stock 13 and the carrier stage 10 using the carrier transport mechanism 11. The carrier 9 conveyed to the carrier stage 10 is carried out.

The lot forming unit 3 forms a lot consisting of a plurality of (for example, 50) substrates 8 to be processed at the same time by combining the substrates 8 housed in one or a plurality of carriers 9. When forming a lot, the lots may be formed so that the surfaces on which the pattern is formed on the surface of the substrate 8 face each other, and the surface on which the pattern is formed on the surface of the substrate 8 may be formed. Lots may be formed so that they all face one side.

The lot forming portion 3 is provided with a substrate transport mechanism 15 for transporting a plurality of substrates 8. The substrate transport mechanism 15 can change the posture of the substrate 8 from the horizontal posture to the vertical posture and from the vertical posture to the horizontal posture during the transport of the substrate 8.

Then, the lot forming unit 3 transfers the substrate 8 from the carrier 9 mounted on the carrier mounting table 14 to the lot mounting unit 4 by using the substrate transport mechanism 15, and the substrate 8 forming the lot is transferred to the lot mounting unit. Place on 4. Further, the lot forming unit 3 transfers the lot mounted on the lot mounting unit 4 to the carrier 9 mounted on the carrier mounting table 14 by the substrate transport mechanism 15. The substrate transfer mechanism 15 has, as a substrate support portion for supporting a plurality of substrates 8, a pre-processing substrate support portion that supports the substrate 8 before processing (before being transported by the lot transport unit 5) and a processing substrate support portion. It has two types of post-processed substrate support portions that support the subsequent substrate 8 (after being transported by the lot transport unit 5). This prevents particles and the like adhering to the substrate 8 and the like before the treatment from being transferred to the substrate 8 and the like after the treatment.

The lot loading unit 4 temporarily places (stands by) the lot transferred between the lot forming unit 3 and the lot processing unit 6 by the lot transporting unit 5 on the lot loading table 16.

The lot loading unit 4 has a lot loading table 17 on the carry-in side on which the lot before processing (before being transported by the lot transporting unit 5) is placed, and after processing (after being transported by the lot transporting unit 5). A lot loading stand 18 on the carry-out side on which the lot is placed is provided. A plurality of substrates 8 for one lot are placed side by side in a vertical position on the carry-in side lot mounting table 17 and the carry-out side lot loading table 18.

Then, in the lot loading unit 4, the lot formed by the lot forming unit 3 is placed on the loading side lot loading table 17, and the lot is carried into the lot processing unit 6 via the lot transporting unit 5. Further, in the lot loading section 4, the lot carried out from the lot processing section 6 via the lot transport section 5 is placed on the carry-out side lot loading table 18, and the lot is conveyed to the lot forming section 3.

The lot transfer unit 5 transfers lots between the lot loading unit 4 and the lot processing unit 6 and between the inside of the lot processing unit 6.

The lot transport unit 5 is provided with a lot transport mechanism 19 for transporting lots. The lot transfer mechanism 19 is composed of a rail 20 arranged along the lot mounting unit 4 and the lot processing unit 6, and a moving body 21 that moves along the rail 20 while holding a plurality of substrates 8. The moving body 21 is provided with a board holding body 22 that holds a plurality of boards 8 arranged in the front-rear position in a vertical posture so as to be able to move forward and backward.

Then, the lot transfer unit 5 receives the lot placed on the carry-in side lot loading table 17 by the substrate holder 22 of the lot transfer mechanism 19, and delivers the lot to the lot processing unit 6. Further, the lot transfer unit 5 receives the lot processed by the lot processing unit 6 by the substrate holder 22 of the lot transfer mechanism 19, and delivers the lot to the unloading side lot loading table 18. Further, the lot transfer unit 5 transfers the lot inside the lot processing unit 6 by using the lot transfer mechanism 19.

The lot processing unit 6 performs processing such as etching, cleaning, and drying by using a plurality of substrates 8 arranged in a vertical position in the front-rear direction as one lot.

The lot processing unit 6 includes a drying processing device 23 that performs a drying process of the substrate 8, a substrate holding body cleaning processing device 24 that performs a cleaning process of the substrate holding body 22, and a cleaning processing device 25 that performs a cleaning process of the substrate 8. And two etching processing devices (board liquid processing devices) 1 according to the present invention that perform etching processing on the substrate 8 are provided side by side.

The drying processing device 23 has a processing tank 27 and a substrate elevating mechanism 28 provided in the processing tank 27 so as to be able to move up and down. A processing gas for drying (IPA (isopropyl alcohol) or the like) is supplied to the processing tank 27. The substrate elevating mechanism 28 holds a plurality of substrates 8 for one lot side by side in a vertical posture. The drying processing device 23 receives the lot from the substrate holder 22 of the lot transport mechanism 19 by the substrate elevating mechanism 28, and elevates the lot by the substrate elevating mechanism 28, so that the processing gas for drying supplied to the processing tank 27 is used. The substrate 8 is dried. Further, the drying processing device 23 delivers the lot from the substrate elevating mechanism 28 to the substrate holder 22 of the lot transfer mechanism 19.

The substrate holder cleaning treatment apparatus 24 has a treatment tank 29, and can supply a treatment liquid for cleaning and a drying gas to the treatment tank 29, and the substrate holder 22 of the lot transfer mechanism 19 is used for cleaning. After the treatment liquid of No. 1 is supplied, the substrate holder 22 is cleaned by supplying a dry gas.

The cleaning processing device 25 has a processing tank 30 for cleaning and a processing tank 31 for rinsing, and the substrate elevating mechanisms 32 and 33 are provided in the processing tanks 30 and 31 so as to be able to move up and down. A cleaning treatment liquid (SC-1 or the like) is stored in the cleaning treatment tank 30. A rinsing treatment liquid (pure water or the like) is stored in the rinsing treatment tank 31.

The etching processing apparatus 1 has a processing tank 34 for etching and a processing tank 35 for rinsing, and the substrate elevating mechanisms 36 and 37 are provided in the processing tanks 34 and 35 so as to be able to move up and down. An etching treatment liquid (phosphoric acid aqueous solution) is stored in the etching treatment tank 34. A rinsing treatment liquid (pure water or the like) is stored in the rinsing treatment tank 35.

The cleaning processing device 25 and the etching processing device 1 have the same configuration. Explaining the etching processing apparatus (board liquid processing apparatus) 1, the substrate elevating mechanism 36 holds a plurality of substrates 8 for one lot side by side in a vertical posture. In the etching processing device 1, the lot is received from the substrate holder 22 of the lot transfer mechanism 19 by the substrate elevating mechanism 36, and the lot is elevated and lowered by the substrate elevating mechanism 36 to immerse the lot in the processing liquid for etching in the processing tank 34. The substrate 8 is etched. After that, the etching processing device 1 delivers the lot from the substrate elevating mechanism 36 to the substrate holder 22 of the lot transfer mechanism 19. Further, the lot is received from the substrate holder 22 of the lot transfer mechanism 19 by the substrate elevating mechanism 37, and the lot is elevated and lowered by the substrate elevating mechanism 37 so that the lot is immersed in the rinsing treatment liquid of the processing tank 35 and the substrate 8 Rinse. After that, the lot is delivered from the board elevating mechanism 37 to the board holder 22 of the lot transfer mechanism 19.

The control unit 7 controls the operation of each unit (carrier loading / unloading unit 2, lot forming unit 3, lot loading unit 4, lot transport unit 5, lot processing unit 6, etching processing device 1) of the substrate liquid processing system 1A. ..

The control unit 7 is composed of, for example, a computer, and includes a storage medium 38 that can be read by the computer. The storage medium 38 stores programs that control various processes executed in the substrate liquid processing device 1. The control unit 7 controls the operation of the substrate liquid processing device 1 by reading and executing the program stored in the storage medium 38. The program may be stored in a storage medium 38 that can be read by a computer, and may be installed in the storage medium 38 of the control unit 7 from another storage medium. Examples of the storage medium 38 that can be read by a computer include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.

[Substrate liquid processing equipment]
Subsequently, the substrate liquid treatment apparatus A1 included in the substrate liquid treatment system 1A will be described in detail. As shown in FIGS. 2 and 3, the substrate liquid processing device A1 includes an etching processing device 1, a substrate elevating mechanism 36 (conveying unit), and a control unit 7.

(Etching processing equipment)
The etching processing apparatus 1 includes a liquid processing unit 40, a processing liquid supply unit 44, a processing liquid discharge unit 67, a plurality of (for example, six) gas nozzles 70, a gas supply unit 89, a gas heating unit 94, and a gas. A punching portion 95 and a liquid level sensor 80 are provided.

The liquid treatment unit 40 is a portion that executes liquid treatment (etching treatment) on the substrate 8, and includes a treatment tank 41, an outer tank 42, and a treatment liquid 43.

The treatment tank 41 houses the treatment liquid 43 and the substrate 8. Specific examples of the treatment liquid 43 include an aqueous phosphoric acid solution. Since the upper part of the treatment tank 41 is open, the substrate 8 can be immersed in the treatment liquid 43 in the treatment tank 41 from above. As will be described later, the circular substrate 8 is arranged in the processing tank 41 in an upright state. Hereinafter, the direction perpendicular to the height direction along the substrate 8 in the processing tank 41 is referred to as a "width direction", and is a direction orthogonal to the height direction and the width direction (that is, the thickness direction of the substrate 8 in the processing tank 41). ) Is called "depth direction".

Of the bottom surface of the treatment tank 41, both side portions in the width direction become higher toward the outside. As a result, the dead space between the inside corner portion in the processing tank 41 and the outer periphery of the substrate 8 is reduced, and the treatment liquid 43 is less likely to stay.

The outer tank 42 is provided so as to surround the treatment tank 41, and accommodates the treatment liquid overflowing from the treatment tank 41.

The treatment liquid supply unit 44 supplies the treatment liquid 43 into the treatment tank 41. For example, the treatment liquid supply unit 44 includes a treatment liquid supply source 45, a flow rate controller 46, a pure water supply source 47, a flow rate controller 48, a treatment liquid circulation unit 49, and a concentration measuring unit 55.

The treatment liquid supply source 45 supplies the treatment liquid 43 to the outer tank 42. The flow rate controller 46 is provided in the flow path of the treatment liquid from the treatment liquid supply source 45 to the outer tank 42, and opens and closes the flow path and adjusts the opening degree.

The pure water supply source 47 supplies pure water to the outer tank 42. This pure water supplements the water evaporated by heating the treatment liquid 43. The flow rate controller 48 is provided in the flow path of pure water from the pure water supply source 47 to the outer tank 42, and opens and closes the flow path and adjusts the opening degree.

The treatment liquid circulation unit 49 sends the treatment liquid 43 in the outer tank 42 to the lower part in the treatment tank 41. For example, the processing liquid circulation unit 49 includes a plurality of (for example, three) processing liquid nozzles 50, a circulation flow path 51, a supply pump 52, a filter 53, and a heater 54.

The treatment liquid nozzle 50 is provided in the lower part of the treatment tank 41, and discharges the treatment liquid 43 into the treatment tank 41. The plurality of processing liquid nozzles 50 are arranged in the width direction at the same height, and each extends in the depth direction.

The circulation flow path 51 guides the treatment liquid from the outer tank 42 to the plurality of treatment liquid nozzles 50. One end of the circulation flow path 51 is connected to the bottom of the outer tank 42. The other end of the circulation flow path 51 is branched into a plurality of lines and is connected to a plurality of processing liquid nozzles 50, respectively.

The supply pump 52, the filter 53, and the heater 54 are provided in the circulation flow path 51, and are arranged in order from the upstream side (outer tank 42 side) to the downstream side (treatment liquid nozzle 50 side). The supply pump 52 pumps the treatment liquid 43 from the upstream side to the downstream side. The filter 53 removes particles mixed in the treatment liquid 43. The heater 54 heats the processing liquid 43 to a set temperature. The set temperature is set to a value near the boiling point of the treatment liquid 43, for example.

The concentration measuring unit 55 measures the concentration of the treatment liquid 43. For example, the concentration measuring unit 55 includes a measuring flow path 56, on-off valves 57 and 59, a concentration sensor 58, a cleaning fluid supply unit 60, and a cleaning fluid discharge unit 64.

The measurement flow path 56 branches from the circulation flow path 51 between the heater 54 and the treatment liquid nozzle 50, and a part of the treatment liquid 43 is extracted and returned to the outer tank 42. The on-off valves 57 and 59 are arranged in order from the upstream side (circulation flow path 51 side) to the downstream side (outer tank 42 side) in the measurement flow path 56, and open and close the measurement flow path 56, respectively. The concentration sensor 58 is provided between the on-off valves 57 and 59 in the measurement flow path 56, and measures the concentration (for example, phosphoric acid concentration) of the processing liquid 43 flowing through the measurement flow path 56.

The cleaning fluid supply unit 60 supplies a cleaning fluid (for example, pure water) to the concentration sensor 58. For example, the cleaning fluid supply unit 60 has a cleaning fluid supply source 61, a supply flow path 62, and an on-off valve 63. The cleaning fluid supply source 61 is a supply source of a cleaning fluid. The supply flow path 62 supplies the cleaning fluid from the cleaning fluid supply source 61 to the concentration sensor 58. One end of the supply flow path 62 is connected to the cleaning fluid supply source 61, and the other end of the supply flow path 62 is connected between the on-off valve 57 and the concentration sensor 58. The on-off valve 63 opens and closes the supply flow path 62.

The cleaning fluid discharge unit 64 discharges the cleaning fluid. For example, the cleaning fluid discharge unit 64 has a discharge flow path 65 and an on-off valve 66. The discharge flow path 65 leads out a cleaning fluid that has passed through the concentration sensor 58. One end of the discharge flow path 65 is connected between the concentration sensor 58 and the on-off valve 59, and the other end of the discharge flow path 65 is connected to a drainage pipe (not shown) of the substrate liquid treatment system 1A. There is. The on-off valve 66 opens and closes the discharge flow path 65.

The treatment liquid discharge unit 67 discharges the treatment liquid 43 from the inside of the treatment tank 41. For example, the processing liquid discharge unit 67 has a drainage flow path 68 and an on-off valve 69. The drainage flow path 68 leads out the treatment liquid in the treatment tank 41. One end of the drainage flow path 68 is connected to the bottom of the treatment tank 41, and the other end of the drainage flow path 68 is connected to a drainage pipe (not shown) of the substrate liquid treatment system 1A. The on-off valve 69 opens and closes the drainage flow path 68.

_{The plurality of gas nozzles 70 discharge an inert gas (for example, N 2} gas) at the lower part in the processing tank 41. The plurality of gas nozzles 70 are arranged in the width direction below the treatment liquid nozzle 50, and each extends in the depth direction. The height of each gas nozzle 70 increases as its arrangement position moves away from the center in the width direction.

The plurality of gas nozzles 70 may be arranged along an arc concentric with the substrate 8. Arranging along the arc includes not only the case where each gas nozzle 70 is located on the arc, but also the case where some gas nozzles 70 are deviated from the arc within a predetermined range. The predetermined range can be arbitrarily set as long as the uniformity of the distance from each gas nozzle 70 to the center of the substrate 8 is higher than when a plurality of gas nozzles 70 are located at the same height.

For example, the plurality of gas nozzles 70 include a pair of gas nozzles 70A located on the innermost side in the width direction, a pair of gas nozzles 70B located outside the pair of gas nozzles 70A, and a pair located further outside the pair of gas nozzles 70B. Including the gas nozzle 70C of. The gas nozzles 70B and 70B are located above the gas nozzles 70A and 70A, and the gas nozzles 70C and 70C are located above the gas nozzles 70B and 70B. The gas nozzles 70A, 70A, 70B, 70B, 70C, and 70C are arranged along an arc concentric with the substrate 8.

The number and arrangement of the gas nozzles 70 can be changed as appropriate. The plurality of gas nozzles 70 may be arranged at the same height.

As shown in FIG. 4, the gas nozzle 70 is located between a tubular (for example, circular tubular) main body 71 arranged so as to extend in the depth direction along the bottom surface of the processing tank 41 and the inner surface 73 and outer surface 74 of the main body 71. It has at least one discharge hole 77 formed so as to penetrate. For example, the gas nozzle 70 has a plurality of discharge holes 77 arranged along the depth direction. The main body 71 is made of, for example, quartz. The main body 71 may be made of a silicon-free material instead of quartz. Specific examples of silicon-free materials include resin materials such as polyetheretherketone (PEEK) and polytetrafluoroethylene (PTFE).

Each discharge hole 77 is provided in the lower part of the main body 71. The discharge hole 77 may be provided at a position deviated from vertically below the pipe center 72 of the main body 71. In this case, the position of the discharge hole 77 may be set so that the vertical virtual plane 75 including the pipe center 72 of the main body 71 does not pass through the discharge hole 77. The center of the discharge hole 77 may be located within a range 76 of ± 10 ° vertically downward around the pipe center 72 of the main body 71.

There is no limitation on the direction in which the discharge hole 77 deviates from the vertical lower side of the pipe center 72. For example, although the discharge hole 77 is shifted to the right side in the drawing, it may be shifted to the left side in the drawing. Further, the discharge holes 77 shifted to the right side in the drawing and the discharge holes 77 shifted to the left side in the drawing may be arranged in a staggered pattern along the depth direction.

The discharge hole 77 is formed so that the opening area becomes smaller from the inner surface 73 side to the outer surface 74 side of the main body 71. As illustrated in FIG. 5, the gas nozzle 70 having such a discharge hole 77 has the discharge hole 77 processed from the inner surface side of one of the two parts 78 and 79 on the half tube, and then the part 78. , 79 can be formed by integrating them by welding, welding, or the like.

Returning to FIGS. 2 and 3, the gas supply unit 89 supplies the inert gas to the gas nozzle 70. For example, the gas supply unit 89 includes a gas supply source 90, a supply flow path 91, an on-off valve 92, and a flow rate controller 93.

The gas supply source 90 is a source of the inert gas. The supply flow path 91 guides the inert gas from the gas supply source 90 to the gas nozzle 70. The on-off valve 92 opens and closes the supply flow path 91. The flow rate controller 93 adjusts the opening degree of the supply flow path 91 between the on-off valve 92 and the gas supply source 90 to adjust the flow rate of the inert gas.

The supply flow path 91, the on-off valve 92, and the flow rate controller 93 may be provided for each arrangement height of the gas nozzle 70. For example, the gas supply source 90 includes supply channels 91A, 91B, 91C, on-off valves 92A, 92B, 92C, and flow rate controllers 93A, 93B, 93C. The supply flow path 91A guides the inert gas from the gas supply source 90 to one end of the gas nozzles 70A and 70A. The supply flow path 91B guides the inert gas from the gas supply source 90 to one end of the gas nozzles 70B and 70B. The supply flow path 91C guides the inert gas from the gas supply source 90 to one end of the gas nozzles 70C and 70C. The on-off valves 92A, 92B, and 92C open and close the supply flow paths 91A, 91B, and 91C, respectively. The flow rate controllers 93A, 93B, 93C adjust the opening degrees of the supply flow paths 91A, 91B, 91C, respectively.

The gas heating unit 94 heats the inert gas supplied to the gas nozzle 70 by the gas supply source 90 to a set temperature. The set temperature is set to a value near the boiling point of the treatment liquid 43, for example. For example, the gas heating unit 94 is provided in the supply flow path 91. In the figure, the gas heating unit 94 is provided at a portion where the supply channels 91A, 91B, and 91C meet on the gas supply source 90 side, but is not limited thereto. The gas heating unit 94 may be provided for each of the supply channels 91A, 91B, 91C.

The degassing portion 95 reduces the internal pressure of the main body 71 of the gas nozzle 70. For example, the degassing section 95 includes a pressure reducing flow path 96 and a pressure reducing valve 97. The pressure reducing flow path 96 branches from the supply flow path 91 between the on-off valve 92 and the gas nozzle 70, and leads out the gas in the supply flow path 91. The pressure reducing valve 97 opens and closes the pressure reducing flow path 96.

The degassing unit 95 may further include a pump for forced exhaust. The pressure reducing flow path 96 and the pressure reducing valve 97 may be provided for each arrangement height of the gas nozzle 70. For example, the degassing section 95 includes pressure reducing channels 96A, 96B, 96C and pressure reducing valves 97A, 97B, 97C. The pressure reducing flow path 96A branches from the supply flow path 91A between the on-off valve 92A and the gas nozzle 70A, and leads out the gas in the supply flow path 91A. The pressure reducing flow path 96B branches from the supply flow path 91B between the on-off valve 92B and the gas nozzle 70B, and leads out the gas in the supply flow path 91B. The pressure reducing flow path 96C branches from the supply flow path 91C between the on-off valve 92C and the gas nozzle 70C, and leads out the gas in the supply flow path 91C. The pressure reducing valves 97A, 97B, 97C open and close the pressure reducing flow paths 96A, 96B, 96C, respectively.

The liquid level sensor 80 acquires information regarding the amount of gas contained in the processing liquid 43 (hereinafter, referred to as “gas content of the treatment liquid 43”). For example, the liquid level sensor 80 is a bubble type liquid level gauge, and includes a bubble tube 81, a pressurized gas supply source 83, a gas line 84, a purge set 82, a detection line 85, a first detector 86A, and the like. Includes a second detector 86B.

The bubble tube 81 is inserted into the treatment liquid in the treatment tank 41, and its end is located near the bottom of the treatment tank 41. The pressurized gas supply source 83 is a supply source of an inert gas for measuring the liquid level (hereinafter, referred to as “measurement gas”). The gas line 84 guides the measurement gas from the pressurized gas supply source 83 to the bubble tube 81. The measurement gas guided to the bubble tube 81 is discharged from the end of the bubble tube 81 into the treatment liquid in the treatment tank 41.

The purge set 82 adjusts the internal pressure of the gas line 84 so that the amount of the measured gas released from the bubble tube 81 is constant. The term "constant" means substantially constant, and means a state in which the value is within the permissible range with reference to a predetermined value.

The detection line 85 transmits the internal pressure of the gas line 84 between the bubble tube 81 and the purge set 82 to the first detector 86A and the second detector 86B. One end of the detection line 85 is connected to the gas line 84 between the bubble tube 81 and the purge set 82, and the other end of the detection line 85 is bifurcated into the first detector 86A and the second detector 86A. Each is connected to the detector 86B.

The first detector 86A and the second detector 86B detect the pressure transmitted by the detection line 85. The detection ranges of the first detector 86A and the second detector 86B are different from each other. The first detector 86A has the highest liquid level (treatment) from the pressure when the liquid level (position of the liquid level) of the treatment liquid 43 in the treatment tank 41 is the lowest (the state where the treatment tank 41 is empty). The detection range is the range up to the pressure when the liquid 43 is overflowing from the treatment tank 41). The second detector 86B detects a range from the minimum value to the maximum value of the pressure fluctuation range according to the gas content of the treatment liquid 43 when the liquid level of the treatment liquid 43 in the treatment tank 41 is at the highest level. It is supposed to be.

In a state where the liquid level of the treatment liquid 43 is maintained at the highest level, the detection value of the second detector 86B will fluctuate mainly according to the gas content of the treatment liquid 43. That is, in a state where the liquid level of the treatment liquid 43 is kept at the highest level, the detected value of the second detector 86B substantially correlates with the gas content of the treatment liquid 43. On the other hand, since the detection range of the first detector 86A is larger than the detection range of the second detector 86B, the pressure detection value by the first detector 86A is based on the fluctuation of the gas content of the treatment liquid 43. It is virtually insensitive. Therefore, the detected value of the first detector 86A substantially correlates with the liquid level of the treatment liquid 43. From the above, by using the first detector 86A and the second detector 86B in combination, information on the gas content of the treatment liquid 43 can be obtained. That is, when the detection value of the first detector 86A indicates that the liquid level of the treatment liquid 43 is maintained at the highest level, the processing is performed by acquiring the detection value of the second detector 86B. Information on the gas content of the liquid 43 can be obtained.

(Board lifting mechanism)
The substrate elevating mechanism 36 immerses the substrate 8 in the processing liquid 43 in the processing tank 41. For example, the substrate elevating mechanism 36 immerses a plurality of upright substrates 8 in the treatment liquid 43 in a state of arranging them along the thickness direction.

More specifically, the substrate elevating mechanism 36 has a plurality of support arms 87 and an elevating portion 88. The plurality of support arms 87 support the plurality of substrates 8 standing up along the width direction in a state of being aligned in the depth direction. The plurality of support arms 87 are arranged in the width direction and extend in the depth direction. Each support arm 87 has a plurality of slots 87a arranged in the depth direction. The slot 87a is a groove-shaped portion that opens upward along the width direction and receives the lower portion of the upright substrate 8.

The elevating unit 88 raises and lowers the plurality of support arms 87 between the height at which the plurality of substrates 8 are immersed in the processing liquid 43 and the height at which the plurality of substrates 8 are located above the liquid level of the processing liquid 43.

(Control unit)
The control unit 7 has a first height H1 below the gas nozzle 70 (for example, the height of the lowest portion on the bottom surface of the processing tank 41) and a second height H2 (for example, the height of the lowest portion of the processing tank 41) in which the substrate 8 can be immersed. The processing liquid supply unit 44 is controlled so as to supply the processing liquid 43 to the processing tank 41 until the liquid level rises to the height of the upper end surface), and the substrate is in a state where the liquid level is at the second height H2 or higher. The substrate elevating mechanism 36 is controlled so that the 8 is immersed in the treatment liquid 43, and the treatment liquid 43 is discharged from the treatment tank 41 until the liquid level drops from the second height H2 to the first height H1. By controlling the processing liquid discharge unit 67 and increasing the amount of gas supplied while the liquid level rises from the first height H1 to the second height H2, the liquid level rises from the second height H2 to the first height. It is configured to control the gas supply unit 89 so as to reduce the amount of gas supplied on the way down to H1 and to execute.

The control unit 7 controls the degassing unit 95 so as to reduce the internal pressure of the main body 71 to a pressure at which the processing liquid 43 can be sucked into the main body 71 of the gas nozzle 70, and discharges the processing liquid 43 in the main body 71. It may be configured to further control the gas supply unit 89 so as to raise the internal pressure of the main body 71 to the obtained pressure.

Further, the control unit 7 receives gas from the gas supply unit 89 to the gas nozzle 70 according to at least one of the distance between the substrates 8, the elapsed time after the immersion of the substrates 8 is started, and the arrangement position of the gas nozzle 70. It is configured to change the supply of.

The control unit 7 may be configured to further control the gas supply unit 89 so that the gas content of the treatment liquid 43 approaches the target value by adjusting the gas supply amount, and the substrate 8 may be configured. When changing the gas supply amount according to at least one of the distance between the substrates and the elapsed time after the immersion of the substrate 8 is started, the gas supply amount may be changed by changing the target value.

FIG. 6 is a block diagram illustrating the functional configuration of the control unit 7. As shown in FIG. 6, the control unit 7 has a liquid supply control unit 111, a drainage control unit 112, an immersion control unit 113, and a gas supply as a functional configuration (hereinafter, referred to as a “functional module”). It has a control unit 114, a cleaning control unit 118, and a recipe storage unit 119.

The recipe storage unit 119 stores various parameters set in advance for specifying the processing content.

The liquid supply control unit 111 controls the treatment liquid supply unit 44 so as to supply the treatment liquid 43 to the treatment tank 41 until the liquid level rises from the first height H1 to the second height H2. Hereinafter, this control is referred to as "filling control of the treatment liquid 43".

The immersion control unit 113 controls the substrate elevating mechanism 36 so that the substrate 8 is immersed in the processing liquid 43 while the liquid level is at the second height H2 or higher. Hereinafter, this control is referred to as "immersion control of the substrate 8".

The drainage control unit 112 controls the treatment liquid discharge unit 67 so that the treatment liquid 43 is discharged from the treatment tank 41 until the liquid level drops from the second height H2 to the first height H1. Hereinafter, this control is referred to as "discharge control of the treatment liquid 43".

The gas supply control unit 114 has an on / off control unit 115, a target value setting unit 116, and a follow-up control unit 117 as more subdivided functional modules.

The on / off control unit 115 increases the amount of gas supplied while the liquid level rises from the first height H1 to the second height H2, and the liquid level falls from the second height H2 to the first height H1. The gas supply unit 89 is controlled so as to reduce the amount of gas supplied during the process. Controlling the gas supply unit 89 so as to increase the gas supply amount includes controlling the gas supply unit 89 so as to start the gas supply by opening the on-off valve 92 from the closed state to the open state. Controlling the gas supply unit 89 so as to reduce the amount of gas supplied includes controlling the gas supply unit 89 so as to stop the gas supply by opening the on-off valve 92 from the open state to the closed state.

The on / off control unit 115 starts supplying gas before the liquid level rising from the first height H1 to the second height H2 reaches the discharge hole 77 of the gas nozzle 70, and the second height H2 to the second The gas supply unit 89 may be controlled so that the gas supply is stopped after the liquid level descending to one height H1 has passed through the discharge hole 77.

Further, the on / off control unit 115 starts supplying gas before the liquid level rising from the first height H1 to the second height H2 reaches the discharge hole 77 of the gas nozzle 70, and the second height H2 Control of the gas supply unit 89 so that the gas supply is stopped after the liquid level descending from the first height H1 has passed through the discharge hole 77 may be executed for each gas nozzle 70 having a different height. .. For example, the on / off control unit 115 sets the on-off valve 92A from the closed state to the open state before the liquid level rising from the first height H1 to the second height H2 reaches the discharge hole 77 of the gas nozzle 70A. The on-off valve 92B is opened from the closed state before the liquid level reaches the discharge hole 77 of the gas nozzle 70B, and the on-off valve 92C is changed from the closed state to the open state before the liquid level reaches the discharge hole 77 of the gas nozzle 70C. The gas supply unit 89 is controlled so as to do so. After that, the on / off control unit 115 closes the on-off valve 92C from the open state to the closed state after the liquid level descending from the second height H2 to the first height H1 passes through the discharge hole 77 of the gas nozzle 70C, and the liquid concerned. The on-off valve 92B is changed from the open state to the closed state after the surface has passed through the discharge hole 77 of the gas nozzle 70B, and the on-off valve 92C is changed from the open state to the closed state after the liquid surface has passed through the discharge hole 77 of the gas nozzle 70A. Controls the gas supply unit 89.

The on / off control unit 115 starts supplying gas before the liquid level rising from the first height H1 to the second height H2 reaches the discharge hole 77 of the gas nozzle 70, and the second height H2 to the second Controlling the gas supply unit 89 so that the gas supply is stopped after the liquid level descending to one height H1 has passed through the discharge hole 77 may be simultaneously executed by the gas nozzles 70 having different heights. In this case, the on / off control unit 115 charges all the gas nozzles 70 before the liquid level rising from the first height H1 to the second height H2 reaches the discharge hole 77 of the lowest gas nozzle 70 (gas nozzle 70A). Gas supply to all gas nozzles 70 is stopped after the liquid level descending from the second height H2 to the first height H1 passes through the discharge hole 77 of the lowest gas nozzle 70. The gas supply unit 89 may be controlled so as to do so.

The target value setting unit 116 sets the target value of the gas content of the treatment liquid 43 according to at least one of the distance between the substrates 8 and the elapsed time after the immersion of the substrates 8 is started. For example, the target value setting unit 116 acquires the elapsed time from the immersion control unit 113, and changes the target value of the gas content of the treatment liquid 43 according to the elapsed time. More specifically, the target value setting unit 116 may make the target value of the gas content of the treatment liquid 43 different before and after the elapsed time reaches a predetermined timing. The above timing and the target value before and after the timing are set in advance and stored in the recipe storage unit 119, and the target value setting unit 116 acquires these information from the recipe storage unit 119.

The recipe storage unit 119 may store different target values depending on the distance between the substrates 8. In this case, the target value setting unit 116 changes the target value according to the distance between the substrates 8. The distance between the substrates 8 is determined according to the number of substrates 8 supported by the support arm 87 of the substrate elevating mechanism 36. The number of substrates 8 supported by the support arm 87 is appropriately set according to the conditions for etching the substrate 8. For example, when the influence of one eluate of adjacent substrates 8 on the etching process of the other cannot be ignored, the number of substrates 8 supported by the support arm 87 is reduced to open some slots 87a, and the substrates 8 are connected to each other. It is necessary to increase the interval between.

The follow-up control unit 117 controls the gas supply unit 89 so that the gas content of the treatment liquid 43 approaches the target value by adjusting the gas supply amount. At this time, the follow-up control unit 117 may change the amount of gas supplied from the gas supply unit 89 to the gas nozzle 70 according to the arrangement position of the gas nozzle 70. For example, the follow-up control unit 117 may change the amount of gas supplied from the gas supply unit 89 to the gas nozzle 70 according to the position of the gas nozzle 70 with respect to the center in the width direction. That is, the follow-up control unit 117 may increase the amount of gas supplied from the gas supply unit 89 to the gas nozzle 70 as the arrangement position of the gas nozzle 70 moves away from the center in the width direction, and the arrangement position of the gas nozzle 70 may be the above. The amount of gas supplied from the gas supply unit 89 to the gas nozzle 70 may be reduced as the distance from the center in the width direction increases. More specifically, the follow-up control unit 117 may make the opening degrees of the flow rate controllers 93A, 93B, 93C different so as to make the amount of gas supplied to the gas nozzles 70A, 70B, 70C different.

The cleaning control unit 118 controls the degassing unit 95 so as to reduce the internal pressure of the main body 71 to a pressure at which the processing liquid 43 can be sucked into the main body 71 of the gas nozzle 70, and discharges the processing liquid 43 in the main body 71. Controlling the gas supply unit 89 so as to raise the internal pressure of the main body 71 to a possible pressure is executed. Hereinafter, this control is referred to as "cleaning control of the gas nozzle 70". The cleaning control unit 118 may execute cleaning control of the gas nozzle 70 after the liquid level rises from the first height H1 to the second height H2 and before the substrate 8 is immersed in the treatment liquid 43. This may be performed after the substrate 8 is immersed in the treatment liquid 43 and before the liquid level drops from the second height H2 to the first height H1.

[Substrate liquid treatment method]
Subsequently, as an example of the substrate liquid treatment method, the control procedure executed by the control unit 7 will be described. As shown in FIG. 7, the control unit 7 first executes step S01. Step S01 includes the filling control of the treatment liquid 43 described above. A more detailed procedure will be described later. Next, the control unit 7 executes step S02. Step S02 includes cleaning control of the gas nozzle 70 described above. A more detailed procedure will be described later. Next, the control unit 7 executes step S03. Step S03 includes the immersion control of the substrate 8 described above. A more detailed procedure will be described later. Next, the control unit 7 executes step S04. Step S04 includes discharge control of the treatment liquid 43 described above. A more detailed procedure will be described later.

Next, the control unit 7 executes step S05. Step S05 includes confirming whether or not the liquid treatment of all lots has been completed. If it is determined in step S05 that a lot for which the liquid treatment has not been completed remains, the control unit 7 returns the procedure to step S01. After that, until the liquid treatment of all lots is completed, the filling control of the treatment liquid 43, the cleaning control of the gas nozzle 70, the immersion control of the substrate 8, and the discharge control of the treatment liquid 43 are repeated. When it is determined in step S05 that the liquid treatment of all lots is completed, the control unit 7 completes the control of the etching processing device 1.

In the example of FIG. 7, the control unit 7 executes the cleaning control of the gas nozzle 70 after the filling control of the treatment liquid 43 and before the immersion control of the substrate 8, but the present invention is not limited to this. For example, the control unit 7 may execute the cleaning control of the gas nozzle 70 after the immersion control of the substrate 8 and before the discharge control of the processing liquid 43. In the treatment in the etching treatment apparatus 1, a large amount of silicon is eluted when the substrate 8 is immersed in the treatment liquid, as compared with the treatment in the cleaning treatment apparatus 25. As a result, when the silicon concentration in the treatment tank 34 becomes high, the cleaning control of the gas nozzle 70 is executed after the filling control of the treatment tank 41 and before the immersion control of the substrate 8 as in the example of FIG. Is preferable.

Further, in the example of FIG. 7, the control unit 7 executes the filling control of the processing liquid, the cleaning control of the gas nozzle 70, and the discharge control of the treatment liquid for each processing of one lot, but the present invention is not limited to this. The filling control of the treatment liquid, the cleaning control of the gas nozzle 70, and the discharge control of the treatment liquid may be executed for each lot.

(Procedure for filling the treatment liquid)
Subsequently, a detailed procedure for controlling the filling of the treatment liquid 43 in step S01 will be described. As shown in FIG. 8, the control unit 7 first executes step S11. In step S11, the liquid supply control unit 111 controls the treatment liquid supply unit 44 so as to start filling the treatment tank 41 with the treatment liquid 43. For example, the liquid supply control unit 111 opens the flow rate controller 46 in a state where the processing tank 41 is empty and the on-off valve 69 is closed to start supplying the processing liquid 43 into the outer tank 42 and supply the liquid supply. The processing liquid supply unit 44 is controlled so as to drive the pump 52 and start sending the liquid from the outer tank 42 to the processing tank 41.

Next, the control unit 7 executes step S12. In step S12, the on / off control unit 115 waits for a preset valve opening time for the on-off valve 92 to be opened next. The valve opening time of the on-off valve 92 is set to a time before the liquid level reaches the discharge hole 77 of the gas nozzle 70 corresponding to the on-off valve 92, and is stored in the recipe storage unit 119. The valve opening time of the on-off valve 92 differs depending on the height of the corresponding gas nozzle 70, and the higher the gas nozzle 70, the longer the valve opening time.

Next, the control unit 7 executes step S13. In step S13, the on / off control unit 115 controls the gas supply unit 89 so as to switch the on-off valve 92 whose opening time has elapsed in step S12 from the closed state to the open state.

Next, the control unit 7 executes step S14. In step S14, the on / off control unit 115 confirms whether or not the on-off valve 92 of all the gas nozzles 70 has been opened.

If it is determined in step S14 that the unopened on-off valve 92 remains, the control unit 7 returns the procedure to step S12. After that, the control unit 7 repeats waiting for the valve opening time and opening the on-off valve 92 until all the on-off valves 92 are opened. As a result, the on-off valve 92 of the lower gas nozzle 70 is opened in order. More specifically, the on-off valve 92A is opened before the liquid level of the treatment liquid 43 reaches the discharge hole 77 of the gas nozzle 70A, and the liquid level that has passed through the discharge hole 77 of the gas nozzle 70A reaches the discharge hole 77 of the gas nozzle 70B. The on-off valve 92B is opened, and the on-off valve 92C is opened before the liquid level passing through the discharge hole 77 of the gas nozzle 70B reaches the discharge hole 77 of the gas nozzle 70C.

If it is determined in step S14 that all the on-off valves 92 have been opened, the control unit 7 executes step S15. In step S15, the liquid supply control unit 111 waits for the elapse of the preset filling time. The filling time is set after the time when the liquid level of the treatment liquid 43 reaches the second height H2, and is stored in the recipe storage unit 119.

Next, the control unit 7 executes step S16. In step S16, the liquid supply control unit 111 starts the circulation control of the processing liquid 43. The circulation control of the treatment liquid 43 controls the treatment liquid supply unit 44 so that the treatment liquid 43 overflowing from the treatment tank 41 to the outer tank 42 is returned to the lower part of the treatment tank 41 by continuing the drive of the supply pump 52. Including doing. In the circulation control, the liquid supply control unit 111 controls the processing liquid supply unit 44 so as to adjust the opening degree of the flow rate controller 48 for pure water according to the concentration of the processing liquid 43 detected by the concentration sensor 58. You may do what you do. With the above, the above step S01 is completed.

(Gas nozzle cleaning procedure)
Subsequently, a detailed procedure for cleaning control of the gas nozzle 70 in step S02 will be described. As shown in FIG. 9, the control unit 7 first executes step S21. In step S21, the cleaning control unit 118 controls the gas supply unit 89 so as to close the on-off valve 92 and interrupt the gas supply to the gas nozzle 70.

Next, the control unit 7 executes step S22. In step S22, the cleaning control unit 118 controls the degassing unit 95 so as to reduce the internal pressure of the main body 71 to a pressure at which the processing liquid 43 can be sucked into the main body 71 of the gas nozzle 70. For example, the cleaning control unit 118 controls the degassing unit 95 so as to change the pressure reducing valve 97 from the closed state to the open state.

Next, the control unit 7 executes step S23. In step S23, the cleaning control unit 118 waits for a preset decompression time. The depressurization time is set so that an amount of the treatment liquid 43 suitable for cleaning is sucked into the main body 71, and is stored in the recipe storage unit 119.

Next, the control unit 7 executes step S24. In step S24, the cleaning control unit 118 controls the degassing unit 95 so as to stop the depressurization in the main body 71. For example, the cleaning control unit 118 controls the degassing unit 95 so as to change the pressure reducing valve 97 from the open state to the closed state.

Next, the control unit 7 executes step S25. In step S25, the cleaning control unit 118 waits for a preset cleaning time. The cleaning time is set so that the cleaning effect of the treatment liquid 43 sucked into the main body 71 can be sufficiently obtained, and is stored in the recipe storage unit 119.

Next, the control unit 7 executes step S26. In step S26, the cleaning control unit 118 controls the gas supply unit 89 so as to raise the internal pressure of the main body 71 to a pressure at which the processing liquid 43 in the main body 71 can be discharged. For example, the cleaning control unit 118 controls the gas supply unit 89 so as to open the on-off valve 92 and restart the gas supply to the gas nozzle 70.

Next, the control unit 7 executes step S27. In step S27, the cleaning control unit 118 waits for a preset drainage time. The drainage time is set so that the treatment liquid 43 sucked into the main body 71 can be sufficiently drained, and is stored in the recipe storage unit 119. This completes step S02.

(Substrate immersion procedure)
Subsequently, a detailed procedure for dipping control of the substrate 8 in step S03 will be described. As shown in FIG. 10, the control unit 7 first executes step S31. In step S31, the plurality of support arms from the height at which the immersion control unit 113 positions the plurality of substrates 8 above the liquid level of the treatment liquid 43 to the height at which the plurality of substrates 8 are immersed in the treatment liquid 43. The substrate elevating mechanism 36 is controlled so as to lower the 87.

Next, the control unit 7 executes step S32. In step S32, the immersion control unit 113 waits for the elapse of the preset processing time. The processing time is set according to the degree of etching required and is stored in the recipe storage unit 119.

Next, the control unit 7 executes step S33. In step S33, the plurality of support arms from the height at which the immersion control unit 113 immerses the plurality of substrates 8 in the treatment liquid 43 to the height at which the plurality of substrates 8 are positioned above the liquid surface of the treatment liquid 43. The substrate elevating mechanism 36 is controlled so as to raise 87. This completes step S03.

(Control procedure of gas supply unit during immersion of substrate)
In parallel with the immersion control of the substrate 8, the control unit 7 controls the gas supply amount by the gas supply unit 89. The procedure for controlling the amount of gas supplied will be described below. As shown in FIG. 11, the control unit 7 first executes step S41. In step S41, the target value setting unit 116 acquires the target value of the gas content of the treatment liquid 43 from the recipe storage unit 119.

As described above, the recipe storage unit 119 may store different target values depending on the distance between the substrates 8. In this case, the target value setting unit 116 changes the target value according to the distance between the substrates 8.

Next, the control unit 7 executes step S42. In step S42, the follow-up control unit 117 acquires information regarding the gas content of the processing liquid 43 from the liquid level sensor 80.

Next, the control unit 7 executes step S43. In step S43, the follow-up control unit 117 sets the amount of gas supplied from the gas supply unit 89 to the gas nozzle 70 so that the gas content of the processing liquid 43 approaches the target value. For example, the follow-up control unit 117 calculates the current value of the gas content of the processing liquid 43 based on the information acquired in step S42, calculates the deviation between the target value and the current value, and calculates proportionally to the deviation. , Proportional / integral calculation or proportional / integral / differential calculation is performed to calculate the opening degree of the flow rate controller 93.

The follow-up control unit 117 may change the amount of gas supplied from the gas supply unit 89 to the gas nozzle 70 according to the arrangement position of the gas nozzle 70. For example, the follow-up control unit 117 may change the opening degree setting value of the flow rate controller 93 corresponding to the gas nozzle 70 according to the position of the gas nozzle 70 with respect to the center in the width direction. That is, the follow-up control unit 117 may increase the opening setting value of the flow rate controller 93 as the arrangement position of the gas nozzle 70 moves away from the center in the width direction, or the arrangement position of the gas nozzle 70 may be the center in the width direction. The opening degree setting value of the flow rate controller 93 may be reduced as the distance from the flow controller 93 increases. More specifically, the follow-up control unit 117 may make the opening degrees of the flow rate controllers 93A, 93B, 93C different so as to make the amount of gas supplied to the gas nozzles 70A, 70B, 70C different.

Next, the control unit 7 executes step S44. In step S44, the follow-up control unit 117 controls the gas supply unit 89 so as to adjust the opening degree of the flow rate regulator 93 according to the opening degree setting value set in step S43.

Next, the control unit 7 executes step S45. In step S45, the target value setting unit 116 confirms whether or not the elapsed time after the start of immersion of the substrate 8 has reached the target value change timing. The target value setting unit 116 acquires the elapsed time information from the immersion control unit 113, and acquires the target value change timing information from the recipe storage unit 119.

When it is determined in step S45 that the elapsed time has reached the change timing of the target value, the control unit 7 executes step S46. In step S46, the target value setting unit 116 changes the target value of the gas content of the treatment liquid 43. For example, the target value setting unit 116 acquires the target value of the gas content of the processing liquid 43 after the change timing from the recipe storage unit 119.

Next, the control unit 7 executes step S47. If it is determined in step S45 that the elapsed time has not reached the change timing of the target value, the control unit 7 executes step S47 without executing step S46. In step S47, the target value setting unit 116 confirms whether or not the immersion of the substrate 8 is completed. The target value setting unit 116 acquires information indicating whether or not the immersion of the substrate 8 is completed from the immersion control unit 113.

If it is determined in step S47 that the immersion of the substrate 8 is not completed, the control unit 7 returns the procedure to step S42. After that, until the immersion of the substrate 8 is completed, the control of bringing the gas content of the treatment liquid 43 closer to the target value and the change of the target time according to the elapsed time are repeated.

When it is determined in step S47 that the immersion of the substrate 8 is completed, the control unit 7 completes the control of the gas supply amount.

(Procedure for discharging treatment liquid)
Subsequently, a detailed procedure for controlling the discharge of the treatment liquid 43 in step S04 will be described. As shown in FIG. 12, the control unit 7 first executes step S51. In step S51, the drainage control unit 112 controls the treatment liquid supply unit 44 and the treatment liquid discharge unit 67 so as to start discharging the treatment liquid 43 from the treatment tank 41. For example, the drainage control unit 112 controls the treatment liquid supply unit 44 so as to close the flow rate controller 46 and the flow rate controller 48 to stop the supply of the treatment liquid 43 and pure water, and then closes the on-off valve 69 from the closed state. The treatment liquid discharge unit 67 is controlled so as to start discharging the treatment liquid 43 from the treatment tank 41 in the open state.

Next, the control unit 7 executes step S52. In step S52, the on / off control unit 115 waits for a preset valve closing time for the on-off valve 92 to be closed next. The valve closing time of the on-off valve 92 is set to a time after the time when the liquid surface passes through the discharge hole 77 of the gas nozzle 70 corresponding to the on-off valve 92, and is stored in the recipe storage unit 119. The valve closing time of the on-off valve 92 differs depending on the height of the corresponding gas nozzle 70, and the lower the gas nozzle 70, the longer the valve closing time.

Next, the control unit 7 executes step S53. In step S53, the on / off control unit 115 controls the gas supply unit 89 so as to switch the on-off valve 92 whose closing time has elapsed in step S52 from the open state to the closed state.

Next, the control unit 7 executes step S54. In step S54, the on / off control unit 115 confirms whether or not the on-off valve 92 of all the gas nozzles 70 is closed.

If it is determined in step S54 that the open on-off valve 92 remains, the control unit 7 returns the procedure to step S52. After that, the waiting for the valve closing time and the closing of the on-off valve 92 are repeated until all the on-off valves 92 are closed. As a result, the on-off valve 92 of the higher gas nozzle 70 is closed in order. More specifically, the on-off valve 92C was closed after the liquid level of the treatment liquid 43 passed through the discharge hole 77 of the gas nozzle 70C, and the liquid level that passed through the discharge hole 77 of the gas nozzle 70C passed through the discharge hole 77 of the gas nozzle 70B. Later, the on-off valve 92B is closed, and the on-off valve 92A is closed after the liquid level that has passed through the discharge hole 77 of the gas nozzle 70B has passed through the discharge hole 77 of the gas nozzle 70A.

If it is determined in step S54 that all the on-off valves 92 have been closed, the control unit 7 executes step S55. In step S55, the drainage control unit 112 waits for the elapse of the preset drainage time. The drainage time is set after the time when the liquid level of the treatment liquid 43 reaches the first height H1, and is stored in the recipe storage unit 119.

Next, the control unit 7 executes step S56. In step S56, the drainage control unit 112 controls the processing liquid supply unit 44 so as to stop driving the supply pump 52, and controls the processing liquid discharge unit 67 so as to close the on-off valve 69. With the above, the above step S04 is completed.

[Effect of this embodiment]
As described above, the substrate liquid processing apparatus A1 includes a processing tank 41 for accommodating the processing liquid 43 and the substrate 8, a substrate elevating mechanism 36 for immersing the substrate 8 in the processing liquid 43 in the processing tank 41, and a processing tank. A treatment liquid supply unit 44 that supplies the treatment liquid 43 into the treatment tank 41, a treatment liquid discharge unit 67 that discharges the treatment liquid 43 from the treatment tank 41, and a gas nozzle 70 that discharges gas in the lower part of the treatment tank 41. The processing liquid 43 is placed in the processing tank 41 from the gas supply unit 89 that supplies gas to the gas nozzle 70 and the first height H1 below the gas nozzle 70 until the liquid level rises to the second height H2 where the substrate 8 can be immersed. The processing liquid supply unit 44 is controlled so as to supply the processing liquid, and the substrate elevating mechanism 36 is controlled so that the substrate 8 is immersed in the processing liquid 43 with the liquid level at the second height H2 or higher. The treatment liquid discharge unit 67 is controlled so that the treatment liquid 43 is discharged from the treatment tank 41 until the liquid level drops from the second height H2 to the first height H1, and the liquid level is from the first height H1. The gas supply unit 89 is controlled so that the gas supply amount is increased while rising to the second height H2 and the gas supply amount is reduced while the liquid level is descending from the second height H2 to the first height H1. And a control unit 7 configured to execute.

According to the substrate liquid treatment apparatus A1, when the liquid level rises from the first height H1 to the second height H2 due to the supply of the treatment liquid 43, the gas nozzle 70 is before the treatment liquid 43 reaches the second height H2. The amount of gas supplied to is increased. As a result, the ingress of the treatment liquid into the gas nozzle 70 is suppressed. When the liquid level drops from the second height H2 to the first height H1 due to the discharge of the treatment liquid 43, the amount of gas supplied to the gas nozzle 70 is reduced before the treatment liquid 43 reaches the first height H1. .. As a result, by suppressing overdrying of the gas nozzle 70 after discharging the treatment liquid 43, sticking / immobilization of the components remaining in the gas nozzle 70 is suppressed. Therefore, since the gas supply path to the treatment liquid 43 is maintained in a constant state for a long period of time, it is effective in stabilizing the gas supply state to the treatment liquid 43.

The gas nozzle 70 has a tubular main body 71 arranged along the bottom surface of the processing tank 41 and a discharge hole 77 formed so as to penetrate between the inner surface 73 and the outer surface 74 of the main body 71, and is a control unit. Reference numeral 7 denotes a liquid that increases the amount of gas supplied before the liquid level that rises from the first height H1 to the second height H2 reaches the discharge hole 77, and falls from the second height H2 to the first height H1. The gas supply unit may be controlled so as to reduce the amount of gas supplied after the surface has passed through the discharge hole 77. In this case, the ingress of the treatment liquid 43 into the gas nozzle 70 can be further suppressed.

The discharge hole 77 may be provided in the lower part of the main body 71. In this case, the processing liquid 43 that has entered the gas nozzle 70 is easily discharged to the outside of the gas nozzle 70.

The main body 71 may be circularly tubular, and the discharge hole 77 may be provided at a position deviated from vertically below the pipe center 72 of the main body 71. In this case, the floating direction of the bubbles from the gas nozzle 70 can be concentrated on one side of the main body 71, and the stability of the diffusion state of the bubbles can be improved.

The position of the discharge hole 77 may be set so that the vertical virtual plane 75 including the pipe center 72 of the main body 71 does not pass through the discharge hole 77. In this case, the floating direction of the bubbles can be more reliably concentrated on one side of the main body 71.

The center of the discharge hole 77 may be located within a range 76 of ± 10 ° vertically downward around the pipe center 72 of the main body 71. In this case, it is possible to achieve both the discharge property of the treatment liquid from the gas nozzle 70 and the stability of the diffusion state of the bubbles.

The substrate liquid processing device A1 may further include a degassing unit 95 for reducing the internal pressure of the main body 71, and the control unit 7 reduces the internal pressure of the main body 71 to a pressure at which the processing liquid 43 can be sucked into the main body 71. To further execute the control of the degassing unit 95 and the control of the gas supply unit 89 so as to raise the internal pressure of the bubble tube 81 to a pressure at which the processing liquid 43 in the main body 71 can be discharged. It may be configured in. In this case, the residual substance can be washed away as the treatment liquid 43 enters the gas nozzle 70.

The control unit 7 controls the degassing unit 95 so as to reduce the internal pressure of the main body 71 to a pressure at which the processing liquid 43 can be sucked into the main body 71, and up to a pressure at which the processing liquid 43 inside the main body 71 can be discharged. Controlling the gas supply unit 89 so as to increase the internal pressure of the main body 71 means that after the liquid level rises from the first height H1 to the second height H2, before the substrate 8 is immersed in the treatment liquid 43. May be executed. In this case, it is possible to prevent the substance eluted in the treatment liquid 43 from entering the gas nozzle 70 due to the immersion of the substrate 8.

The control unit 7 controls the degassing unit 95 so as to reduce the internal pressure of the main body 71 to a pressure at which the processing liquid 43 can be sucked into the main body 71, and up to a pressure at which the processing liquid 43 inside the main body 71 can be discharged. Controlling the gas supply unit 89 so as to increase the internal pressure of the main body 71 means that after the substrate 8 is immersed in the treatment liquid 43, before the liquid level drops from the second height H2 to the first height H1. May be executed. In this case, it is possible to prevent the discharge from the inside of the gas nozzle 70 from being mixed into the treatment liquid 43 before the substrate 8 is immersed.

Although the embodiments have been described above, the present invention is not necessarily limited to the above-described embodiments, and various modifications can be made without departing from the gist thereof. The substrate to be processed is not limited to a silicon wafer, and may be, for example, a glass substrate, a mask substrate, an FPD (Flat Panel Display), or the like. Further, although the configuration relating to the etching processing apparatus 1 is shown in detail as the substrate liquid processing apparatus A1, the same configuration can be applied to the cleaning processing apparatus 25.

[Additional Notes]
The above-described embodiment includes the following configurations.
(1)
A processing tank that houses the processing liquid and the substrate,
A transport unit for immersing the substrate in the treatment liquid in the treatment tank, and
A treatment liquid supply unit that supplies the treatment liquid into the treatment tank,
A gas nozzle that discharges gas at the lower part of the processing tank and
A gas supply unit for supplying the gas to the gas nozzle is provided.
The gas nozzle
A tubular body arranged along the bottom surface of the treatment tank and
It has a discharge hole formed in the lower part of the main body so as to penetrate between the inner surface and the outer surface of the main body.
The discharge hole is a substrate liquid treatment device provided at a position deviated from vertically below the center of the pipe of the main body.
(2)
The substrate liquid treatment apparatus according to (1) above, wherein the position of the discharge hole is set so that a vertical virtual plane including the center of the pipe of the main body does not pass through the discharge hole.
(3)
The substrate liquid treatment apparatus according to (2) above, wherein the center of the discharge hole is located within a range of ± 10 ° vertically downward around the center of the pipe of the main body.
(4)
A degassing part that reduces the internal pressure of the main body and
The degassing portion is controlled so as to reduce the internal pressure of the main body to a pressure at which the treatment liquid can be sucked into the main body, and the internal pressure of the main body is adjusted to a pressure at which the treatment liquid in the main body can be discharged. The substrate liquid treatment apparatus according to any one of (1) to (3) above, further comprising controlling the gas supply unit so as to raise the gas supply unit, and further comprising a control unit configured to execute the operation.

A1 ... Substrate liquid processing device, 7 ... Control unit, 8 ... Substrate, 36 ... Substrate elevating mechanism (conveying unit), 38 ... Storage medium, 43 ... Processing liquid, 44 ... Processing liquid supply unit, 67 ... Processing liquid discharge unit, 70, 70A, 70B, 70C ... Gas nozzle, 89 ... Gas supply part, 95 ... Degassing part, 41 ... Treatment tank, 43 ... Treatment liquid, 71 ... Main body, 73 ... Inner surface, 74 ... Outer surface, 77 ... Discharge hole, 72 ... tube center, 75 ... virtual plane, H1 ... first height, H2 ... second height.

Claims (15)

A processing tank that houses the processing liquid and the substrate,
A transport unit for immersing the substrate in the treatment liquid in the treatment tank, and
A treatment liquid supply unit that supplies the treatment liquid into the treatment tank,
A treatment liquid discharge unit that discharges the treatment liquid from the treatment tank,
A gas nozzle that discharges gas at the lower part of the processing tank and
A gas supply unit that supplies the gas to the gas nozzle and
Controlling the treatment liquid supply unit so as to supply the treatment liquid to the treatment tank from the first height below the gas nozzle until the liquid level rises to a second height at which the substrate can be immersed. The transport unit is controlled so that the substrate is immersed in the treatment liquid in a state where the liquid level is equal to or higher than the second height, and the liquid level is changed from the second height to the first height. The treatment liquid discharge unit is controlled so that the treatment liquid is discharged from the treatment tank until the liquid level is lowered to, and the gas is discharged while the liquid level is rising from the first height to the second height. It is configured to increase the supply amount and control the gas supply unit so as to reduce the supply amount of the gas while the liquid level is descending from the second height to the first height. A substrate liquid processing device including a control unit and a control unit. The gas nozzle
A tubular body arranged along the bottom surface of the treatment tank and
It has a discharge hole formed so as to penetrate between the inner surface and the outer surface of the main body.
The first aspect of the present invention, wherein the control unit controls the gas supply unit so as to increase the supply amount of the gas before the liquid level rising from the first height to the second height reaches the discharge hole. Substrate liquid processing equipment. 2. The control unit controls the gas supply unit so as to reduce the supply amount of the gas after the liquid level descending from the second height to the first height has passed through the discharge hole. Substrate liquid processing equipment. The substrate liquid treatment apparatus according to claim 2 or 3, wherein the discharge hole is provided in the lower part of the main body. The body is circular and tubular
The substrate liquid treatment apparatus according to claim 4, wherein the discharge hole is provided at a position deviated from vertically below the center of the pipe of the main body. The substrate liquid treatment apparatus according to claim 5, wherein the position of the discharge hole is set so that a vertical virtual plane including the center of the pipe of the main body does not pass through the discharge hole. The substrate liquid treatment apparatus according to claim 6, wherein the center of the discharge hole is located within a range of ± 10 ° vertically downward around the center of the pipe of the main body. Further provided with a degassing portion for reducing the internal pressure of the main body,
The control unit controls the degassing unit so as to reduce the internal pressure of the main body to a pressure at which the treatment liquid can be sucked into the main body, and up to a pressure at which the treatment liquid in the main body can be discharged. The substrate liquid treatment apparatus according to any one of claims 2 to 7, further comprising controlling the gas supply unit so as to increase the internal pressure of the main body. The control unit controls the degassing unit so as to reduce the internal pressure of the main body to a pressure at which the treatment liquid can be sucked into the main body, and up to a pressure at which the treatment liquid in the main body can be discharged. Controlling the gas supply unit so as to increase the internal pressure of the main body means that after the liquid level rises from the first height to the second height, before the substrate is immersed in the treatment liquid. The substrate liquid processing apparatus according to claim 8, which is executed. The control unit controls the degassing unit so as to reduce the internal pressure of the main body to a pressure at which the treatment liquid can be sucked into the main body, and up to a pressure at which the treatment liquid in the main body can be discharged. Controlling the gas supply unit so as to increase the internal pressure of the main body means that after the substrate is immersed in the treatment liquid, before the liquid level drops from the second height to the first height. The substrate liquid processing apparatus according to claim 8, which is executed. Supplying the treatment liquid to the treatment tank from the first height below the gas nozzle that discharges gas at the lower part of the treatment tank until the liquid level rises to the second height at which the substrate can be immersed.
Immersing the substrate in the treatment liquid in the treatment tank while the liquid level is at the second height or higher.
To discharge the treatment liquid from the treatment tank until the liquid level drops from the second height to the first height.
While the liquid level is rising from the first height to the second height, the amount of gas supplied to the gas nozzle is increased, and the liquid level is falling from the second height to the first height. A method for treating a substrate liquid, which comprises reducing the amount of the gas supplied to the gas nozzle. The gas nozzle
A tubular body arranged along the bottom surface of the treatment tank and
It has a discharge hole formed so as to penetrate between the inner surface and the outer surface of the main body.
When the amount of gas supplied to the gas nozzle is increased while the liquid level is rising from the first height to the second height, the liquid level rising from the first height to the second height The substrate liquid treatment method according to claim 11, wherein the supply amount of the gas is increased before reaching the discharge hole. When the amount of gas supplied to the gas nozzle is reduced while the liquid level is descending from the second height to the first height, the liquid level is lowered from the second height to the first height. The substrate liquid treatment method according to claim 12, wherein the amount of the gas supplied is reduced after the gas has passed through the discharge hole. To reduce the internal pressure of the main body to a pressure at which the treatment liquid can be sucked into the main body,
The substrate liquid treatment method according to claim 12 or 13, further comprising increasing the internal pressure of the main body to a pressure at which the treatment liquid in the main body can be discharged. A computer-readable storage medium in which a program for causing an apparatus to execute the substrate liquid treatment method according to any one of claims 11 to 14 is stored.

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