JP2021034510A - Glass-on-silicon substrate and method for manufacturing the same - Google Patents

Abstract

To provide: a glass-on-silicon substrate which can prevent the production of a void at a junction interface without providing an oxide film on a single crystal silicon substrate even when a non-alkali glass substrate is joined to the single crystal silicon substrate to provide a thick insulator layer on a single crystal silicon substrate, which has a heat resistance and which is small in warp; and a method for manufacturing such a glass-on-silicon substrate.SOLUTION: A method for manufacturing a glass-on-silicon substrate according to the present invention comprises the step of preparing a single crystal silicon substrate 1, and a nonalkaline glass substrate 2 of which the difference in linear expansion coefficient from the single crystal silicon substrate is within ±0.2 ppm/°C in a range of 25-250°C. In the nonalkaline glass substrate, a Mg content in all of alkali-earth metals components included therein is 10 wt% or more in terms of oxide. The method further comprises the steps of: performing a surface activation process 3 on lamination faces 1s and 2s of the substrates and then, bonding them together at the lamination faces to obtain an assembly 4; and thinning a nonalkaline glass layer 2a of the assembly 4 so as to have a thickness of 30-100 μm after edge trimming.SELECTED DRAWING: Figure 1

Description

The present invention relates to a glass-on-silicon substrate and a method for manufacturing the same.

Since the glass material is an insulator, the loss of high-frequency signals is smaller than that of semiconductors and conductors, and it is promising as a material for RF-MEMS (Radio Frequency-Micro Electro Mechanical System) and the like. Conventionally, silicon (Si) has been used as a substrate because of its good workability, and an SOI (Silicon on Insulator) substrate is generally used for MEMS applications. However, since silicon is a semiconductor, there is a problem that the loss of RF signal is large. The thickness of the insulating layer of the SOI substrate is as thin as several hundred nm to 1 μm, and the signal loss to the substrate becomes large in RF applications. In order to reduce the RF loss, it is preferable to increase the thickness of the insulating layer so that the RF signal does not leak to the substrate. For that purpose, it is desired that the thickness of the insulating layer is 10 μm or more, more preferably 30 μm or more. Normally, the insulating layer of the SOI substrate is manufactured by a method in which silicon is thermally oxidized to form a thermal oxide film on the surface and then silicon is separately bonded. However, an insulating film having the above thickness is produced by thermal oxidation. Long-term oxidation is required to provide the above. Further, it is practically difficult to form the thickness of the insulating layer to 30 μm or more by this method.

On the other hand, in Patent Document 1, a silicon substrate in which hydrogen ions are injected at a predetermined dose amount and a quartz substrate are bonded after surface activation treatment, and after heat treatment at 300 ° C. or lower, the silicon thin film is peeled off. A method for manufacturing an SOQ (Silicon on Quartz) substrate to be transferred to a quartz substrate is described.

Further, Patent Document 2 describes an SOG (Semiconductor on Glass) substrate and a method for manufacturing the same. According to Patent Document 2, Corning's Eagle glass is a glass containing alkaline earth ions, and is substantially consistent with the coefficient of thermal expansion (CTE) of silicon. has a CTE of 3.18 × ^{10 -6} / ℃ at 400 ° C., silicon and have a CTE of 3.253810 ^-6 / ° C. at 400 ° C., Eagle glass is relatively high strain point of 666 ° C. It is described that it has and that a semiconductor layer such as silicon and a glass substrate are anodically bonded.

JP-A-2007-214478 Special Table 2013-534056

The present inventors have considered applying, for example, the method described in Patent Document 1 in order to form an insulating layer having a thickness of 30 μm or more on silicon, but form a thin quartz glass on a silicon substrate. If you try, the difference in the coefficient of linear expansion between silicon and quartz is large, so after bonding, the bonded substrate will warp on the order of several mm due to heat treatment at 300 ° C, making it difficult to transfer the wafer in the subsequent processing process. The problem of becoming is conceivable. In addition, the process of forming RF-MEMS requires a maximum temperature of 700 ° C and heat resistance at the temperature shown on the left. However, when a substrate with silicon and quartz bonded together is heated to 700 ° C, the thickness of quartz is 30 μm. Even if it is made as thin as possible, cracks occur due to thermal stress, and it is considered difficult to use quartz as the insulating layer.

As a method for solving the difference in linear expansion coefficient from silicon and heat resistance, it is conceivable to use non-alkali glass instead of quartz glass. As described in Patent Document 2, Corning's Eagle glass, which is a non-alkali glass, has a very small difference in coefficient of linear expansion from silicon, which is about 0.07 ppm / ° C. The warp of the substrate becomes small. Further, the strain point is also in the vicinity of 700 ° C., and has heat resistance of 700 ° C. On the other hand, regarding the anodic bonding between silicon and the glass substrate described in Patent Document 2, the anodic bonding applies an electric field to the bonded wafer at a high temperature to diffuse cations in the glass to increase the bonding force. Although it is a method for obtaining it, there is a problem that the productivity is inferior to that of the surface-activated bonding because it is a single-wafered method and is held at a high temperature for a long time.

When the non-alkali glass and silicon are surface-activated and bonded, the present inventors increase the bonding force to the surface-activated bonded wafer because the non-alkali glass has a higher density and a denser structure than the quartz glass. We faced the problem that voids were generated at the bonding interface when the heat treatment was performed. It is possible to prevent the generation of voids by providing a silicon oxide film of 50 nm or more on the surface of the silicon to be bonded, but it is necessary to perform a process of providing an oxide film such as thermal oxidation of silicon, which increases the cost. There is a problem of becoming.

Therefore, in the present invention, even if a non-alkali glass substrate is bonded to a single crystal silicon substrate in order to provide a thick insulating layer on the single crystal silicon substrate, voids at the bonding interface are formed without providing an oxide film on the single crystal silicon substrate. It is an object of the present invention to provide a glass-on-silicon substrate which can prevent the occurrence, has heat resistance, and has a small warp, and a method for manufacturing the same.

In order to achieve the above object, one aspect of the present invention is a glass-on-silicon substrate in which a single crystal silicon layer and a non-alkali glass layer are surface-activated and bonded, and the single crystal silicon. The difference in linear expansion coefficient between the layer and the non-alkali glass layer at 25 to 250 ° C. is within ± 0.2 ppm / ° C, and the ratio of magnesium in the total alkaline earth metal component contained in the non-alkali glass layer is oxidized. It is 10% or more in terms of goods.

In the glass-on-silicon substrate according to the present invention, the thickness of the non-alkali glass layer may be 30 to 100 μm.

Further, another aspect of the present invention is a method for manufacturing a glass-on-silicon substrate in which a silicon substrate and a glass substrate are bonded, wherein (a) a single crystal silicon substrate and the single crystal silicon substrate 25 This is a step of preparing a non-alkali glass substrate having a linear expansion coefficient difference of within ± 0.2 ppm / ° C at ~ 250 ° C., wherein the non-alkali glass substrate is an all-alkali earth contained in the non-alkali glass substrate. A step in which the ratio of magnesium in the metal component is 10% or more in terms of oxide, and (b) a surface activation treatment on at least one surface of the laminated surface of the single crystal silicon substrate and the bonded surface of the non-alkali glass substrate. And (c) after performing the surface activation treatment, the bonded surface of the single crystal silicon substrate and the bonded surface of the non-alkali glass substrate face each other, and the single crystal silicon substrate and the non-alkali It includes a step of laminating glass substrates.

In the method for producing a glass-on-silicon substrate according to the present invention, the thickness of the silicon oxide film on the surface of the single crystal silicon substrate before the bonding step may be zero or 1 nm or less.

In the method for manufacturing a glass-on-silicon substrate according to the present invention, a glass-on-silicon substrate in which the single crystal silicon substrate and the non-alkali glass substrate are bonded together after the bonding step is performed at 100 ° C. A step of heat treatment at ~ 700 ° C. may be further included.

The method for producing a glass-on-silicon substrate according to the present invention includes a step of reducing the thickness of the non-alkali glass substrate in the glass-on-silicon substrate to 30 to 100 μm after performing the heat treatment step. Further may be included. Further, a step of edge trimming the non-alkali glass substrate in the glass-on-silicon substrate may be further included before the step of thinning.

According to the present invention, by using such a non-alkali glass substrate, a glass-on-silicon substrate can be obtained even if surface activation bonding is performed without intentionally providing an oxide film on the surface of the single crystal silicon substrate. It is possible to prevent the generation of voids at the bonding interface of the glass. Therefore, there is no need for a process of providing an oxide film such as thermal oxidation of a single crystal silicon substrate before bonding, and heat treatment after bonding can be performed in a batch type oven or furnace by surface activation bonding, so that the manufacturing cost is high. Can be kept low. In addition, a glass-on-silicon substrate having heat resistance and small warpage can be obtained.

It is a schematic diagram which shows one aspect of the manufacturing method of the glass-on-silicon substrate which concerns on this invention.

Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings, but the scope of the present invention is not limited to this embodiment.

As shown in FIG. 1, the method for manufacturing a glass-on-silicon substrate of the present embodiment includes a step of preparing a single crystal silicon substrate 1 and a non-alkali glass substrate 2, and a step of preparing the single crystal silicon substrate 1 and the non-alkali glass. A step of surface-activating the substrate 2 ((a) and (b) in FIG. 1) and a step of laminating the surface-activated single crystal silicon substrate 1 and the non-alkali glass substrate 2 ((in FIG. 1). c)) and are included.

Further, in the method for manufacturing a glass-on-silicon substrate of the present embodiment, in addition to the above steps, as shown in FIG. 1, the non-alkali glass layer 2a is edged in the bonded body 4 obtained by the above bonding. It may include a step of trimming ((d) in FIG. 1) and a step of thinning the non-alkali glass layer 2b in the bonded body 4 ((e) in FIG. 1). Further, although not shown in FIG. 1, a step of heat-treating the bonded body 4 may be included. Hereinafter, each step will be described in detail.

The single crystal silicon substrate 1 used in the present embodiment intentionally does not have a _{silicon oxide film (SiO 2 film) on its surface. Intentionally, the SiO 2} film is not provided by thermal oxidation, chemical vapor deposition (CVD), or physical vapor deposition (PVD) such as vapor deposition or sputtering. _{When the single crystal silicon substrate 1 is used, a SiO 2} film having a diameter of 1 nm or less is usually formed on the surface as a natural oxide film unless it is treated with hydrogen fluoride (HF) or the like, but in the present embodiment, it is as it is. It may be used or treated with HF to remove the natural oxide film before use.

The size of the substrate is not particularly limited, but a wafer having a size of 4 to 12 inches can be used. The thickness of the substrate is also not particularly limited, but may be a general-purpose JEITA or SEMI standard thickness, and specifically, it may be a predetermined thickness of 520 to 775 μm.

The non-alkali glass substrate 2 has a linear expansion coefficient difference of ± 0.2 ppm / ° C or less from the single crystal silicon substrate 1 at 25 to 250 ° C., and the total alkaline soil contained in the non-alkali glass substrate 2 is contained. Use a glass having a magnesium content of 10% or more in terms of oxide. The term "non-alkali" means that the content of alkali metal components such as sodium (Na) and potassium (K) contained in the glass substrate is 1000 wt ppm or less in terms of oxide.

The coefficient of linear thermal expansion at 25 to 250 ° C. is a value calculated as an average coefficient of linear thermal expansion measured using a differential thermal expansion meter (TMA) over a temperature range of 25 to 250 ° C. in accordance with JIS R3102: 1995. Is. The upper limit of the temperature range, 250 ° C., is the temperature at which the strength of the bonding interface becomes the maximum value. By using the non-alkali glass substrate 2 having a small difference in linear expansion coefficient from the single crystal silicon substrate 1 in this way, the bonded body 4 (that is, a glass-on-silicon substrate) obtained by bonding with the single crystal silicon substrate 1 is used. Warp can be reduced. Examples of the non-alkali glass satisfying the condition of the difference in coefficient of linear expansion include Corning's trade names EagleXG, Eagle2000, # 1737 and AGC's trade name SWAN310. Although not particularly limited, the linear expansion coefficient of the single crystal silicon substrate and the non-alkali glass substrate at 25 to 250 ° C. is preferably in the range of 3.1 to 3.8 ppm / ° C.

Further, as the alkaline earth metal component contained in the non-alkali glass substrate 2, there are magnesium (Mg), calcium (Ca), strontium (Sr), and barium (Ba), each of which exists as an oxide. By setting the proportion of Mg in the total alkaline earth metal component contained in the non-alkali glass substrate 2 to 10% by weight or more in terms of oxide, a SiO ₂ film is formed on the bonded surface of the single crystal silicon substrate 1. Even if the single crystal silicon substrate 1 is bonded to the single crystal silicon substrate 1 without performing the process, it is possible to suppress the generation of voids at the bonding interface with the single crystal silicon substrate 1. As a non-alkali glass satisfying the condition of the ratio of Mg in the total alkaline earth metal component, for example, there is a trade name SWAN310 manufactured by AGC Inc. The proportion of Mg in the total alkaline earth metal component is preferably 15% by weight or more, more preferably 20% by weight or more in terms of oxide. The upper limit of the proportion of Mg in the total alkaline earth metal component is not particularly limited, but is preferably 30% by weight or less in terms of oxide.

In addition to the alkaline earth metal component, silicon (Si), aluminum (Al), and boron (B) are present as oxides in the non-alkali glass. The composition of the non-alkali glass substrate 2 is not particularly limited, but for example, in% by weight, SiO ₂ : 50 to 80%, Al ₂ O ₃ : 10 to 30%, B ₂ O _{3: 3 to} 15%, MgO: It is preferably 15 to 30%, CaO: 10 to 25%, SrO: 0 to 5%, and BaO: 0 to 5%.

Further, the non-alkali glass substrate 2 has a high strain point (measured in accordance with JIS R3103-02: 2001) of around 700 ° C., and therefore, the heat treatment temperature of the glass-on-silicon substrate is 700 ° C. at the maximum. Because of this, it also has excellent heat resistance. The size of the non-alkali glass substrate 2 may be the same as that of the single crystal silicon substrate 1, and the thickness may be a thickness that can be handled with respect to the wafer size, for example, 200 μm to the same thickness as the single crystal silicon substrate 1.

It is preferable that the bonded surface 1s of the single crystal silicon substrate 1 and the bonded surface 2s of the non-alkali glass substrate 2 are mirror-polished, respectively. The surface roughness (Rms) of the bonded surface is preferably 0.5 nm or less. By setting Rms to 0.5 nm or less, both substrates can be bonded and joined. Rms refers to the root mean square roughness defined in JIS B 0601: 2013.

Next, as shown in the steps (a) and (b) of FIG. 1, the surface activation treatment 3 is applied to the bonded surface 1s of the single crystal silicon substrate 1 and the bonded surface 2s of the non-alkali glass substrate 2. Before the surface activation treatment, in order to remove foreign substances adhering to the surfaces of both substrates, it may be washed with pure water or a chemical solution. The surface activation treatment 3 is not particularly limited as long as it can activate the bonded surface, and examples thereof include plasma activation treatment, ion beam irradiation treatment, UV ozone treatment, ozone water treatment, and the like. Plasma treatment or ion beam treatment is preferred. The atmosphere of the surface activation treatment 3 can be an inert gas such as nitrogen or argon, or oxygen, or they can be used alone or in combination.

Then, as shown in the step (c) of FIG. 1, the single crystal is formed by bonding the bonded surface 1s of the surface-activated single crystal silicon substrate 1 and the bonded surface 2s of the non-alkali glass substrate 2. A bonded body 4a including a silicon layer 1a and a non-alkali glass layer 2a can be obtained. The temperature at the time of bonding is preferably room temperature. It may be bonded by heating, but it does not make a big difference from the case where it is bonded at room temperature.

By heat-treating the joint body 4a, the joint strength can be increased. The heat treatment temperature is preferably 100 to 700 ° C, more preferably 150 to 700 ° C, and even more preferably 200 to 700 ° C. If the heat treatment temperature is lower than 100 ° C., the bond strength does not increase, and then the non-alkali glass layer 2a of the bonded body 4a may be peeled off in the step (e) of thinning. Since the desired heat resistant temperature is 700 ° C., the heat treatment temperature does not need to be higher than that. The heat treatment may be performed in two or more steps by dividing the temperature. For example, the heat treatment is performed at a temperature of 100 to 300 ° C., and then the thinning step (e) is performed, and then the heat treatment at a higher temperature is performed. It may be carried out. The heat treatment time depends on the temperature to some extent, but is preferably 1 to 72 hours, for example.

After the heat treatment, as shown in step (d) of FIG. 1, the non-alkali glass layer 2a of the bonded body 4a may be edge trimmed. This is to prevent edge chipping from occurring as the non-alkali glass layer 2a of the bonded body 4a is thinned. The edge trimming removes the non-alkali glass from the outer peripheral edge of the non-alkali glass substrate 2 to a portion preferably up to 5 mm, more preferably a portion up to 2 mm. Edge trimming can be performed using known mechanical means such as grinding and polishing. Edge trimming is not limited to before the thinning step (e) described later, and may be performed at any timing during or after thinning, but when chipping occurs after thinning. Therefore, it is preferable to carry out before or during thinning.

Then, as shown in the step (e) of FIG. 1, the thickness of the non-alkali glass layer 2b of the edge-trimmed bonded body 4b is reduced. The thickness of the non-alkali glass layer 2b is not particularly limited because it depends on the glass-on-silicon substrate, but it is preferably thinned to a thickness of, for example, 30 to 100 μm. As the means for thinning, known means such as mechanical means such as grinding and polishing and chemical means such as liquid phase / vapor phase etching may be used alone or in combination.

The bonded body 4c (that is, a glass-on-silicon substrate) thus obtained has the characteristics that the generation of voids at the bonding interface is suppressed, the heat resistance is 700 ° C., and the warpage is small. The warpage is preferably 100 μm or less on a wafer having a size of 6 to 8 inches, for example. If the warp is 100 μm or less, the glass-on-silicon substrate can be conveyed without any problem. By providing the silicon layer on the surface of the non-alkali glass layer 2c of the glass-on-silicon substrate 4c, it is possible to form an SOI structure having small warpage, heat resistance, and a thick insulating layer.
Surface activated junction

Hereinafter, the method for producing a composite substrate according to the present invention will be further described with reference to Examples and Comparative Examples, but the present invention is not limited thereto.

[Example 1]
As the single crystal silicon substrate, a wafer having an outer diameter of 8 inches and a thickness of 725 μm was used. AGC's trade name SWAN310 was used as the non-alkali glass substrate, and the outer diameter and thickness were the same as those of the single crystal silicon substrate. The linear expansion coefficients of the single crystal silicon substrate and the non-alkali glass substrate at 25 to 250 ° C. were 3.5 ppm / ° C. and 3.4 ppm / ° C., respectively, and the difference was 0.1 ppm / ° C. The bonded surfaces of both substrates were mirror-polished. The surface roughness Rms of the bonded surface was 0.2 nm.

Then, the single crystal silicon substrate was immersed in an SC-1 cleaning solution (NH ₄ OH + H ₂ O ₂ + H ₂ O) to remove particles and hydrophilize the substrate. The non-alkali glass substrate was ultrasonically cleaned with pure water to remove particles. After that, the bonding surface of the single crystal silicon substrate and the bonding surface of the non-alkali glass substrate are irradiated with an ion beam in a chamber equipped with a gas cluster ion beam (manufactured by ULVAC) under an Ar atmosphere to activate the surface. The conversion process was carried out.

Next, the bonded surfaces of the surface-activated single crystal silicon substrate and the non-alkali glass substrate were bonded at room temperature using a bonding device. The bonded substrates were heat-treated at 150 ° C. for 8 hours to obtain a bonded body. When a blade was inserted into the bonding interface between the single crystal silicon layer and the non-alkali glass layer of the bonded body and it was confirmed whether or not peeling occurred, it was confirmed that the bonding surface did not peel and the bonding strength was sufficient. did.

With respect to the alkali-free glass layer of the bonded body thus obtained, a portion 2 mm from the outer peripheral edge was edge-trimmed with a chamfering machine manufactured by Tosei Engineering Corp.

Further, in order to thin the alkali-free glass layer of the bonded body, grinding was performed using a grinder manufactured by Tokyo Seimitsu Co., Ltd., and the alkali-free glass layer was thinned to a thickness of 35 μm. Then, the surface was mirror-surfaced by CMP (Chemical Mechanical Polishing) to make the final thickness of the non-alkali glass layer 30 μm, and a glass-on-silicon substrate was obtained.

When the glass-on-silicon substrate thus produced was heat-treated at 700 ° C. for 2 hours in the atmosphere, it was confirmed that the wafer did not crack and had a heat resistance of 700 ° C. In addition, no voids were observed at the bonding interface. Further, it was confirmed that the warp of the wafer was 30 μm, which was unchanged before and after the heat treatment, and was at a level where there was no problem on the transport surface.

[Example 2]
A glass-on-silicon substrate was prepared in the same procedure as in Example 1 except that the final thickness of the non-alkali glass layer was 100 μm. When the produced substrate was heat-treated at 700 ° C. for 2 hours in the atmosphere, it was confirmed that the wafer did not crack and had a heat resistance of 700 ° C. Further, it was confirmed that the warp of the wafer was 40 μm, which was unchanged before and after the heat treatment, and was at a level where there was no problem on the transport surface.

[Comparative Example 1]
An attempt was made to produce a glass-on-silicon substrate by the same procedure as in Example 1 except that EAGLE-XG manufactured by Corning Inc. was used as the non-alkali glass substrate. The coefficient of linear expansion of this non-alkali glass substrate at 25 to 250 ° C. was 3.1 ppm / ° C., and the difference from the single crystal silicon substrate was 0.4 ppm / ° C. This non-alkali glass substrate could be bonded to the single crystal silicon substrate without any problem, but when heat treatment was performed at 150 ° C. for 8 hours, voids were generated at the bonding interface. Further, when the heat treatment was performed at 300 ° C. for 8 hours, the number of voids increased, and the behavior was different from that when SWAN310 was used.

[Comparative Example 2]
Same as in Example 1 except that EAGLE-XG manufactured by Corning Inc. was used as the non-alkali glass substrate and a single crystal silicon substrate provided with a 100 nm thermal oxide film was used as the crystalline silicon substrate. A glass-on-silicon substrate was prepared by the procedure. In this combination, no voids were observed in the heat treatment after bonding. Further, the same edge trimming, grinding and polishing as in Example 1 could be performed without any problem, and a glass-on-silicon substrate provided with a non-alkali glass layer having a thickness of 30 μm could be produced. It was confirmed that the wafer had a heat resistance of 700 ° C. by the heat treatment, and the warpage of the wafer was a good value of 30 μm, which was unchanged before and after the heat treatment.

From the results of Comparative Example 2, any non-alkali glass can be used if a thermal oxide film is provided on the bonded surface of the single crystal silicon substrate, but no thermal oxide film is provided, that is, a thermal oxidation process. As shown in Example 1 and Comparative Example 1, a large difference was observed when a single crystal silicon substrate was used, which does not require a cost such as performing the above. As a result of investigating what caused it, it was found that there was a difference in the ratio of alkaline earth metal components contained in the non-alkali glass substrate, as shown in Table 1.

As shown in Table 1, in particular, there was a large difference in the concentrations of CaO and MgO. By using non-alkali glass in which the proportion of Mg in the alkaline earth metal component is 10% by weight or more in terms of oxide, surface activation bonding is performed without providing a thermal oxide film on the single crystal silicon substrate to be bonded. It was found that the generation of voids can be suppressed. That is, by using a non-alkali glass substrate having a high proportion of MgO, it is possible to manufacture a glass-on-silicon substrate having a small warpage at low cost without performing a thermal oxidation process.

1 Single crystal silicon substrate 2 Non-alkali glass substrate 3 Surface activation treatment 4 Bonded body (glass on silicon substrate)

Claims (6)

A glass-on-silicon substrate in which a single crystal silicon layer and a non-alkali glass layer are surface-activated and bonded, and the difference in linear expansion coefficient between the single crystal silicon layer and the non-alkali glass layer at 25 to 250 ° C. Is within ± 0.2 ppm / ° C., and the ratio of magnesium in the total alkaline earth metal component contained in the non-alkali glass layer is 10% by weight or more in terms of oxide, which is a glass-on-silicon substrate. The glass-on-silicon substrate according to claim 1, wherein the non-alkali glass layer has a thickness of 30 to 100 μm. A method for manufacturing a glass-on-silicon substrate in which a silicon substrate and a glass substrate are bonded.
This is a step of preparing a single crystal silicon substrate and a non-alkali glass substrate having a linear expansion coefficient difference of ± 0.2 ppm / ° C or less at 25 to 250 ° C. from the single crystal silicon substrate. However, in the step where the ratio of magnesium in the total alkaline earth metal component contained in the non-alkali glass substrate is 10% by weight or more in terms of oxide.
A step of performing a surface activation treatment on at least one surface of the bonded surface of the single crystal silicon substrate and the bonded surface of the non-alkali glass substrate, and
After performing the surface activation treatment, the step of bonding the single crystal silicon substrate and the non-alkali glass substrate by facing the bonded surface of the single crystal silicon substrate and the bonded surface of the non-alkali glass substrate is performed. Manufacturing method of glass-on-silicon substrate including. The method for manufacturing a glass-on-silicon substrate according to claim 3, wherein the thickness of the silicon oxide film on the surface of the single crystal silicon substrate before the bonding step is zero or 1 nm or less. Claim 3 or 4 further includes a step of heat-treating a glass-on-silicon substrate in which the single crystal silicon substrate and the non-alkali glass substrate are bonded at 100 ° C. to 700 ° C. after performing the bonding step. The method for manufacturing a glass-on-silicon substrate according to the description. The production of the glass-on-silicon substrate according to claim 5, further comprising a step of reducing the thickness of the non-alkali glass substrate in the glass-on-silicon substrate to 30 to 100 μm after performing the heat treatment step. Method.