JP2020204059A - Sputtering device - Google Patents

Abstract

To provide a sputtering device of a high-frequency shield structure having a sliding part and an opening part in applying a high frequency to a substrate electrode.SOLUTION: A sputtering device includes a film deposition chamber, a cathode, a substrate electrode, a first power supply rod electrically connected to the substrate electrode for transferring high-frequency power to the substrate electrode from the outside of the film deposition chamber, a high-frequency transfer passage for transferring the high-frequency power to the first power supply rod, a first shield box for accommodating the high-frequency transfer passage and preventing an electromagnet wave from leaking from the high-frequency transfer passage, a cylindrical shield member that surrounds the first power supply rod from outside and is fixed to the first power supply rod while electrically insulated from the first power supply rod, and a first driving source for driving the shield member and the first power supply rod to integrally slide up and down to the first shield box. The first shield box has an opening part through which the shield member slides.SELECTED DRAWING: Figure 2A

Description

The present invention relates to a sputtering apparatus that deposits sputtered particles evaporated from the surface of a target by plasma treatment on a substrate to form a film. More specifically, the present invention relates to a high-frequency application mechanism of a sputtering device that supplies electric power using a high-frequency power supply and a high-frequency matching box to apply high-frequency waves to substrate electrodes and cathodes.

An application of the high frequency application mechanism of a conventional sputtering apparatus is to apply a high frequency to the cathode to sputter an insulating material in which a positive charge is generated on the target surface by direct current and the discharge is not sustained, and a film is formed. In addition, since regular maintenance is required due to replacement of the target that is the source of the film formation material and cleaning of the film formation chamber by film formation, a high frequency application mechanism is used so that the cathode and high frequency transmission path can be separated. There is a sliding moving part. (See, for example, Patent Document 1)

5A and 5B show the conventional high frequency application mechanism and sputtering apparatus described in Patent Document 1. The conventional sputtering apparatus shown in FIG. 5A includes a film forming chamber 1, a first shield box 4 that covers a power transmission unit 2 from a high frequency power supply and a high frequency output end 3, and a matching box 5 that is attached to the first shield box 4. A second shield box 8 that covers the cathode 6 and the high frequency input end 7 that are detachably attached to the film forming chamber 1, and a drive source 9 that separates the cathode 6 and the second shield box 8 from the film forming chamber 1. Attached to the shield 10 to which the high frequency output end 3 is fixed via an insulator, the pressurizing source 11 that slides the high frequency output end 3 and the shield 10 in the direction of connecting to the high frequency input end 7, and the end face of the shield 10. The conductive elastic member 12a is provided, and the conductive elastic member 12b provided between the first shield box 4 and the shield 10 is provided.

Since the shield 10 slides in the first shield box 4, the first shield box 4 is provided with an opening, but the conductive elastic member 12b is brought into close contact with the shield 10 to ensure continuity. At the time of mass production, the high frequency output end 3 and the high frequency input end 7 are connected and high frequency power is transmitted to the cathode 6, but the conductive elastic member 12a is pressed against the end face of the second shield box 8 and comes into close contact with the outside of the device. It is possible to block the leakage of electromagnetic waves.

At the time of maintenance, the power transmission unit 2 and the matching box 5 are separated from the cathode 6. Further, by removing the cathode 6 and the second shield box 8 from the film forming chamber 1 by the drive source 9, maintenance work becomes possible.

On the other hand, there is also a film forming method for improving the coating film ratio on the surface of a substrate on which irregularities are formed by applying a high frequency to the substrate electrode and sputtering the film while applying a bias voltage to the substrate. The coating ratio increases as the bias voltage increases, but protrusions called overhangs may be formed. Since this phenomenon can be suppressed to some extent by adjusting the relative position between the target and the substrate, a sliding moving portion for adjusting the relative position is provided in the high frequency application mechanism of the substrate electrode. Similar to the cathode, in order to prevent the leakage of electromagnetic waves from the high frequency transmitting portion to the outside of the device, a shield structure including a sliding moving portion and an opening is required. (See, for example, Prior Document 2)

JP-A-2010-229529 JP 2004-107688

In high frequency application to the substrate electrodes, the relative position between the target and the substrate is adjusted for each film formation of each substrate during mass production, so that the high frequency application mechanism slides and operates for each process. Therefore, when the conductive elastic member is used to conduct the sliding operation portion and the opening as in the high frequency application mechanism of the cathode, the wear becomes remarkable due to the influence that the sliding operation frequency becomes extremely high. As a result, poor contact points and gaps are generated between the sliding moving portion and the opening, which causes deterioration of the shielding performance and electromagnetic waves leak. Since electromagnetic waves act as a noise source for electronic devices around the device, there is a problem that problems such as malfunction and failure of the device occur. In this way, it can be said that there is still room for improvement in preventing the leakage of electromagnetic waves with high accuracy.

Therefore, an object of the present invention is to solve the above-mentioned problems and to provide a sputtering apparatus capable of accurately preventing leakage of electromagnetic waves.

The sputtering apparatus of the present invention has a film forming chamber for sputtering a substrate with the inside in a vacuum state, a cathode arranged in the forming chamber and transmitting power from an external power source during the sputtering process, and the forming chamber. A substrate electrode that applies a bias voltage to the substrate, a first feeding rod that is electrically connected to the substrate electrode and transmits high-frequency power from the outside of the film forming chamber to the substrate electrode, and the first feeding rod. 1 A high-frequency transmission path that transmits high-frequency power to the feeding rod, a first shield box that accommodates the high-frequency transmission path and prevents leakage of electromagnetic waves from the high-frequency transmission path, and a cylinder that surrounds the first feeding rod from the outside. A shield member which is shaped like a member and is fixed to the first power supply rod in a state of being electrically insulated from the first power supply rod, and the shield member and the first power supply rod are placed in the first shield box. A first drive source for driving the shield members so as to be integrally slid up and down is provided, and an opening through which the shield member is slidably passed is provided in the first shield box.

According to the sputtering apparatus of the present invention, leakage of electromagnetic waves can be prevented with high accuracy.

The figure which shows the sputtering apparatus in Embodiment 1 of this invention. The figure which shows the high frequency application mechanism (when power is cut off) in Embodiment 1 of this invention. The figure which shows the high frequency application mechanism (during sliding operation, at the time of power transmission) in Embodiment 1 of this invention. The figure which shows the shield structure of the sliding part and the opening in Embodiment 1 of this invention. The figure which shows the shield structure of the sliding part and the opening in Embodiment 1 of this invention. The figure which shows the shield structure of the sliding part and the opening in Embodiment 1 of this invention. The figure which shows the high frequency application mechanism (when power is cut off) in Embodiment 2 of this invention. The figure which shows the high frequency application mechanism (during sliding operation, at the time of power transmission) in Embodiment 2 of this invention. The figure which shows the conventional high frequency application mechanism and a sputtering apparatus (when power is cut off) The figure which shows the conventional high frequency application mechanism and a sputtering apparatus (during sliding operation, power transmission).

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(Embodiment 1)
FIG. 1 shows the sputtering apparatus 100 according to the first embodiment of the present invention.

The sputtering apparatus 100 includes a film forming chamber 10, a cathode 20, a matching box 30, a shield box (first shield box) 40, a substrate electrode 50, and a drive source 60.

The film forming chamber 10 is a member that performs a sputtering process with the inside in a vacuum state. The cathode 20 is a member to which electric power is transmitted from an external power source during the sputtering process. The matching box 30 is a member that is arranged in the lower part of the film forming chamber 10 and performs impedance matching between the external high frequency power supply and the high frequency transmission path 102. The shield box 40 is a member that blocks electromagnetic wave leakage from the high frequency transmission path 102. The substrate electrode 50 is a member that applies a bias voltage to the substrate. The drive source 60 is a member that changes the position of the substrate electrode 50.

The power supplied to the cathode 20 is divided into direct current and alternating current (high frequency) depending on factors such as the film forming material, and the power transmission structure and the application mechanism are different. In order to realize the position change of the substrate electrode 50, the shield box 40 is provided with an opening 104 and a shield member 44 sliding in the opening 104.

2A and 2B show the high frequency application mechanism according to the first embodiment of the present invention.

The shield box 40 is provided with an output plate 41, a power supply plate 42, a power supply rod (first power supply rod) 43, a shield member 44, a flange 45, and a coil spring type conductive ring 46.

The output plate 41 is a member to which high-frequency power is supplied from the matching box 30. The power supply plate 42 is a deformable sheet-shaped member that connects the output plate 41 and the power supply rod 43. The output plate 41 and the power supply plate 42 form a high frequency transmission path 102.

The feeding rod 43 is a rod-shaped member that transmits high-frequency power transmitted from the high-frequency transmission path 102 to the substrate electrode 50. The shield member 44 is a tubular member provided so as to surround the power feeding rod 43 at intervals, and slides in the opening 104 of the shield box 40. The flange 45 is a member attached to the opening 104 of the shield box 40 and accommodating the coil spring type conductive ring 46. The coil spring type conductive ring 46 is a member that prevents electromagnetic waves from leaking from between the shield member 44 and the shield box 40 by being in close contact with the shield member 44.

The drive source (first drive source) 60 includes a trapezoidal screw 61, a slide plate 62, an insulating shaft 63, and a bellows 64.

The trapezoidal screw 61 is a member that transmits the rotational power of the drive source 60 to the slide plate 62. The slide plate 62 is a member that is connected to the trapezoidal screw 61 to convert the rotary motion of the drive source 60 into a linear motion. The insulating shaft 63 is a member that comes into contact with the feeding rod 43 while being arranged inside the slide plate 62 and fixes the feeding rod 43 to the slide plate 62 in a non-conducting state (electrically insulated state). The bellows 64 is a bellows-shaped member provided between the film forming chamber 10 and the slide plate 62. The bellows 64 is provided so as to surround the feeding rod 43 at intervals, and the feeding rod 43 is introduced straight into the film forming chamber 10 in vacuum.

Since the shield member 44 is attached to the slide plate 62, the shield member 44 and the feeding rod 43 move up and down as a unit when the slide plate 62 is raised and lowered. Since the substrate electrode 50 is connected to the feeding rod 43, the position of the substrate electrode 50 can be changed by changing the position of the slide plate 62. When a high frequency is applied, the coil spring type conductive ring 46 is in close contact with the shield member 44 and conducts with the flange 45 and the shield box 40, so that electromagnetic leakage of the opening 104 during high frequency power transmission is blocked. As for the power transmission unit on the vacuum side, the inside of the film forming chamber 10 is a closed space in order to create a vacuum state, and since it is conductive with the bellows 64 and the slide plate 62, the shielding property is ensured.

Since the bellows 64 is deformed by the pressure difference under vacuum, the trapezoidal screw 61 and the shield member 44 may be significantly eccentric and damaged. Therefore, a supporting shaft may be added to the slide plate 62 and the film forming chamber 10 to secure the rigidity and the shaft deviation of the sliding moving portion.

Although the trapezoidal screw 61 is used for the rotation transmission of the drive source 60, a ball screw may be used instead. By using the ball screw, it is possible to eliminate the mechanical loss due to the frictional portion between the surfaces and the influence of backlash, and improve the positional accuracy of the substrate electrode 50.

Although the bellows 64 is used for the straight introduction into the vacuum, a straight introduction structure in which the O-ring is brought into close contact with the circumference of the shaft may be used. In that case, since the shaft slides, an opening is provided in the film forming chamber 10. Similar to the shield box 40, a flange 45 and a coil spring type conductive ring 46 may be installed in the opening to ensure continuity between the film forming chamber 10 and the shaft.

With respect to the insulating shaft 63, if the gap between the shield member 44, the bellows 64 and the film forming chamber 10 and the feeding rod 43 cannot be properly secured, a short circuit or an abnormal discharge due to contact will occur. In that case, the shaft length of the insulating shaft 63 may be lengthened to ensure that conduction is prevented.

3A, 3B, and 3C show the configuration of the shield structure of the shield member 44 and the opening 104, which are the sliding moving portions in the first embodiment of the present invention.

In the shield structure of the first embodiment, the flange 45 is attached to the grooved portion of the opening 104 of the shield box 40, and the coil spring type conductive ring 46 is installed in the inner groove of the flange 45. With respect to the slidingly operating shield member 44, the coil spring type conductive ring 46 is in close contact with the shield member 44 in a state of point contact at each pitch of the number of turns due to the spring tension, and the shield box 40 and the shield member 44 are electrically connected. Secure.

The coil spring type conductive ring 46 is made of a metal such as iron or stainless steel. The coil spring type conductive ring 46 is diagonally wound so as to be deformed so that the spring tension becomes constant even with respect to the sliding resistance during the sliding operation of the shield member 44 and the eccentricity of the shield member 44 due to mounting and processing errors. Has a structure. In the diagonally wound structure, the sliding resistance acts diagonally with respect to the sliding operating direction of the shield member 44. As a result, since the action also acts in the rotation direction during the sliding operation of the shield member 44, the position where the coil spring type conductive ring 46 comes into contact with the shield member 44 changes according to the sliding operating distance. That is, sliding does not occur at a specific position on the contact surface between the shield member 44 and the coil spring type conductive ring 46.

The flange 45 is processed so that the width of the inner groove is 0.05 mm to 0.2 mm with respect to the coil diameter. By setting the gap to 0.2 mm or less, it is possible to prevent the coil spring type conductive ring 46 from being twisted during the sliding operation of the shield member 44, and the coil spring type conductive ring 46 can be plastically deformed and Damage can be suppressed. Further, in a structure in which the coil spring type conductive ring 46 is press-fitted into the inner groove of the flange 45 by setting the gap to 0.05 mm or more, when the sliding resistance of the shield member 44 is generated, the coil spring type conductive ring The 46 can be deformed and the spring tension can be maintained.

With the above configuration, it is possible to prevent poor contact and gaps due to wear between the shield member 44 and the coil spring type conductive ring 46. Further, when a high frequency is applied to the substrate electrode 50 whose position changes, the leakage of electromagnetic waves from the high frequency transmission path 102 is completely blocked between the shield box 40 and the shield member 44 in the opening 104. According to the above configuration, low wear resistance, long life, and stable sealing performance can be realized between the slidingly operating shield member 44 and the coil spring type conductive ring 46.

The sputtering apparatus 100 of the first embodiment described above includes a film forming chamber 10, a cathode 20, a substrate electrode 50, a first feeding rod 43, a high frequency transmission path 102, a first shield box 40, and a shield member 44. And a first drive source 60. The film forming chamber 10 is a member that creates a vacuum inside and sputters the substrate. The cathode 20 is a member arranged in the film forming chamber 10 and to which electric power is transmitted from an external power source during the sputtering process. The substrate electrode 50 is a member that is arranged in the film forming chamber 10 and applies a bias voltage to the substrate. The first feeding rod 43 is a member that is electrically connected to the substrate electrode 50 and transmits high-frequency power from the outside of the film forming chamber 10 to the substrate electrode 50. The high frequency transmission path 102 is a member that transmits high frequency power to the first feeding rod 43. The first shield box 40 is a member that accommodates the high frequency transmission path 102 and prevents leakage of electromagnetic waves from the high frequency transmission path 102. The shield member 44 is a tubular member that surrounds the first feeding rod 43 from the outside, and is fixed to the first feeding rod 43 in a state of being electrically insulated from the first feeding rod 43. The first drive source 60 drives the shield member 44 and the first feeding rod 43 so as to integrally slide up and down with respect to the first shield box 40. The first shield box 40 is provided with an opening 104 through which the shield member 44 is slidably passed.

According to such a configuration, when a high frequency is applied to the substrate electrode 50, it is possible to have a high frequency shield structure having a shield member 44 which is a sliding portion and an opening 104, and it is possible to accurately prevent leakage of electromagnetic waves. it can.

Further, according to the sputtering apparatus 100 of the first embodiment, the first drive source 60 has a slide plate 62 fixed to the shield member 44. The slide plate 62 includes an insulating shaft 63 that surrounds and fixes the first feeding rod 43 from the outside. According to such a configuration, the shield member 44 and the first feeding rod 43 can be driven with a simple configuration by using the slide plate 62.

Further, according to the sputtering apparatus 100 of the first embodiment, a bellows 64 is provided between the slide plate 62 and the film forming chamber 10. According to such a configuration, by providing the bellows 64, the shield member 44 and the first feeding rod 43 can be slid while suppressing the leakage of electromagnetic waves.

Further, the sputtering apparatus 100 of the first embodiment further includes a matching box 30 that performs impedance matching between the high frequency transmission path 102 and an external high frequency power supply. According to such a configuration, high frequency power can be transmitted more efficiently.

Further, according to the sputtering apparatus 100 of the first embodiment, the high frequency transmission path 102 has an output plate 41 and a feeding plate 42. The output plate 41 is a member to which high-frequency power is supplied from the matching box 30. The power supply plate 42 is a member that is connected to the output plate 41 and the first power supply rod 43 and can change its shape following the position of the first power supply rod 43. According to such a configuration, high frequency power can be transmitted more efficiently.

Further, according to the sputtering apparatus 100 of the first embodiment, the first shield box 40 has a flange 45 and a coil spring type conductive ring 46. The flange 45 is a member that is attached to the opening 104 and surrounds the shield member 44. The coil spring type conductive ring 46 is a member that is attached to the inner groove of the flange 45 and is in close contact with the shield member 44 to ensure the continuity between the first shield box 40 and the shield member 44. According to such a configuration, by sealing the opening 104 with the coil spring type conductive ring 46, it is possible to realize low wear resistance and long life, and further stabilize the sealing property. Can be done.

Further, according to the sputtering apparatus 100 of the first embodiment, the width of the inner groove of the flange 45 is set so that the gap is 0.05 mm or more and 0.2 mm or less with respect to the coil diameter of the coil spring type conductive ring 46. Will be done. According to such a configuration, damage to the coil spring type conductive ring 46 can be suppressed, and deterioration of quality can be suppressed.

(Embodiment 2)
4A and 4B show the high frequency application mechanism and the sputtering apparatus 200 according to the second embodiment of the present invention.

As shown in FIGS. 4A and 4B, in addition to the same configuration as in the first embodiment, the sputtering apparatus 200 includes a second shield box 601, a second drive source 602, a spindle gear 603, and a passive shaft gear 604. A second feeding rod 605, a magnetic fluid seal 606, an insulating shaft 607, an insulating flange 608, a second output plate 609, and a bearing 610 are provided.

The second shield box 601 is a member connected to the drive source 60 and the trapezoidal screw 61. The second drive source 602 is a member fixed to the second shield box 601. The spindle gear 603 is a member attached to the spindle of the second drive source 602. The passive shaft gear 604 is a member that transmits rotation from the spindle gear 603. The second feeding rod 605 is a member that connects to the substrate electrode 50. The magnetic fluid seal 606 is a member that is connected to the second shield box 601 and the bellows 64 to achieve both axial rotation drive and vacuum seal. The insulating shaft 607 is a member that fixes the second feeding rod 605 to the magnetic fluid seal 606 without conducting electricity. The insulating flange 608 is a member that non-conductingly fixes the feeding rod 43 to the second shield box 601. The second output plate 609 is a member to which high-frequency power is supplied from the feeding rod 43. The bearing 610 is a member that transmits the rotational support of the second feeding rod 605 and the high frequency power from the second output plate 609.

Since the passive shaft gear 604 is attached to the insulating shaft 607, when the second drive source 602 is operating, the insulating shaft 607 and the second feeding rod 605 are integrated and the rotation is transmitted from the spindle gear 603. This makes it possible to configure a high-frequency application mechanism having a rotation straight-ahead introduction in which the substrate electrode 50 rotates.

As described above, the sputtering apparatus of the second embodiment has a second shield box 601 and a second drive source 602. The second shield box 601 is a member that accommodates the upper end of the first power feeding rod 43 and is attached with a shield member 44 to prevent leakage of electromagnetic waves from the inside. The second feeding rod 605 is a member that is electrically connected to the first feeding rod 43 inside the second shield box 601 and extends so as to be connected to the lower surface of the substrate electrode 50. The second drive source 602 is a member that rotates the substrate electrode 50 by rotating the second feeding rod 605. In such a configuration, the first drive source 60 integrally moves the shield member 44 and the first power feeding rod 43 by moving the second shield box 601 to which the shield member 44 is attached up and down.

According to such a configuration, the function of rotating the substrate electrode 50 in addition to the function of moving the substrate electrode 50 up and down can be exhibited.

Further, according to the sputtering apparatus of the second embodiment, a magnetic fluid seal 606 surrounding the second feeding rod 605 is provided between the second shield box 601 and the film forming chamber 10. According to such a configuration, both rotary drive and vacuum sealing can be achieved at the same time.

In the second embodiment, a vacuum seal of a liquid using a magnetic fluid and a rotation transmission structure are used, but a partition wall rotation transmission structure using a non-contact magnetic joint may also be used.

Further, in the second embodiment, the structure is such that the second feeding rod 605 and the insulating shaft 607 are rotated by the transmission of the gear, but the present invention is not limited to this case. A structure may be used in which the second drive source 602 and the second feeding rod 605 are connected via an insulating member to directly transmit rotation.

Since the high frequency application mechanism and the sputtering apparatus of the present invention have a structure in which a high frequency is applied to the substrate in vacuum, they can also be applied to plasma processing apparatus such as an etching apparatus.

10 Film formation chamber 20 Cathode 30 Matching box 40 Shield box (1st shield box)
41 Output plate 42 Power supply plate 43 Power supply rod (first power supply rod)
44 Shield member 45 Flange 46 Coil spring type conductive ring 50 Substrate electrode 60 Drive source (first drive source)
61 Trapezoidal screw 62 Slide plate 63 Insulation shaft 64 Bellows 100 Sputtering device 102 High frequency transmission path 104 Opening 200 Sputtering device 601 Second shield box 602 Second drive source 603 Spindle gear 604 Passive shaft gear 605 Second power supply rod 606 Magnetic fluid seal 607 Insulated shaft 608 Insulated flange 609 2nd output plate 610 Bearing

Claims (9)

A film formation chamber that creates a vacuum inside and sputters the substrate,
A cathode arranged in the film forming chamber and transmitting power from an external power source during sputtering processing,
A substrate electrode arranged in the film forming chamber and applying a bias voltage to the substrate,
A first feeding rod that is electrically connected to the substrate electrode and transmits high-frequency power from the outside of the film forming chamber to the substrate electrode.
A high-frequency transmission path for transmitting high-frequency power to the first feeding rod,
A first shield box that accommodates the high-frequency transmission path and prevents leakage of electromagnetic waves from the high-frequency transmission path.
A tubular member that surrounds the first feeding rod from the outside, and a shield member that is fixed to the first feeding rod in a state of being electrically insulated from the first feeding rod.
A first drive source for driving the shield member and the first power feeding rod so as to integrally slide up and down with respect to the first shield box is provided.
A sputtering apparatus provided with an opening through which the shield member is slidably passed in the first shield box. The first drive source has a slide plate fixed to the shield member.
The sputtering apparatus according to claim 1, wherein the slide plate includes an insulating shaft that surrounds and fixes the first feeding rod from the outside. The sputtering apparatus according to claim 2, wherein a bellows is provided between the slide plate and the film forming chamber. The sputtering apparatus according to any one of claims 1 to 3, further comprising a matching box for impedance matching between the high frequency transmission path and an external high frequency power supply. The high frequency transmission path is
An output board to which high-frequency power is supplied from the matching box and
The sputtering apparatus according to claim 4, further comprising the output plate and a feeding plate which is connected to the first feeding rod and whose shape can be changed according to the position of the first feeding rod. The first shield box is
A flange attached to the opening and surrounding the shield member,
Any one of claims 1 to 5, which is attached to the inner groove of the flange and has a coil spring type conductive ring which is attached to the shield member and is in close contact with the shield member to ensure continuity between the first shield box and the shield member. The sputtering apparatus according to one. The sputtering apparatus according to claim 6, wherein the width of the inner groove of the flange is set so that the gap is 0.05 mm to 0.2 mm with respect to the coil diameter of the coil spring type conductive ring. A second shield box that accommodates the upper end of the first power supply rod and is attached with the shield member to prevent leakage of electromagnetic waves from the inside.
A second feeding rod that is electrically connected to the first feeding rod inside the second shield box and extends so as to be connected to the lower surface of the substrate electrode.
It has a second drive source that rotates the substrate electrode by rotating the second feeding rod.
The first drive source according to claims 1 to 7, wherein the shield member and the first feeding rod are integrally moved by moving the second shield box to which the shield member is attached up and down. The sputtering apparatus according to any one. The sputtering apparatus according to claim 8, wherein a magnetic fluid seal surrounding the second feeding rod is provided between the second shield box and the film forming chamber.

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