JP2020189764A5 - - Google Patents

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JP2020189764A5
JP2020189764A5 JP2019095277A JP2019095277A JP2020189764A5 JP 2020189764 A5 JP2020189764 A5 JP 2020189764A5 JP 2019095277 A JP2019095277 A JP 2019095277A JP 2019095277 A JP2019095277 A JP 2019095277A JP 2020189764 A5 JP2020189764 A5 JP 2020189764A5
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crystal
inhibitor according
photodegradation inhibitor
photodegradation
surfactant
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JP2019095277A
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JP7318911B2 (en
JP2020189764A (en
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Claims (11)

価数の異なる２種以上のスズ（Ｓｎ）原子と酸素（Ｏ）原子とからなる結晶体を含有する光劣化抑制材。 A photodegradation inhibitor containing a crystal composed of two or more kinds of tin (Sn) atoms and oxygen (O) atoms having different valences. ２００～８００ｎｍの波長の光の少なくとも一部を吸収する請求項１に記載の光劣化抑制材。 The photodegradation inhibitor according to claim 1, which absorbs at least a part of light having a wavelength of 200 to 800 nm. 前記結晶体は、ＳｎThe crystal is Sn ３3 ＯO ４4 結晶である、請求項１または２に記載の光劣化抑制材。The photodegradation inhibitor according to claim 1 or 2, which is a crystal. 前記結晶体が、＋２価、及び、＋４価の前記スズ原子を含有する、請求項１～３のいずれか１項に記載の光劣化抑制材。 The photodegradation inhibitor according to any one of claims 1 to 3, wherein the crystal contains +2 valent and +4 valent tin atoms. 前記結晶体は、ＳｎThe crystal is Sn ２＋2+ とＳｎAnd Sn ４＋4+ ＯO ６6 八面体とからなる構造が配列された結晶である、請求項４に記載の光劣化抑制材。The photodegradation inhibitor according to claim 4, which is a crystal in which a structure composed of an octahedron is arranged. 前記結晶体は、（ＳｎThe crystal is (Sn ２＋2+ ）) ２2 （Ｓｎ(Sn ４＋4+ ）Ｏ) O ４4 の混合原子価で表される結晶である、請求項５に記載の光劣化抑制材。The photodegradation inhibitor according to claim 5, which is a crystal represented by the mixed valence of the above. 更に界面活性剤を含有する請求項１～６のいずれか１項に記載の光劣化抑制材。 The photodegradation inhibitor according to any one of claims 1 to 6, further comprising a surfactant. 前記界面活性剤が、前記結晶体に担持されている、請求項７に記載の光劣化抑制材。 The photodegradation inhibitor according to claim 7 , wherein the surfactant is supported on the crystal. 前記界面活性剤は、クエン酸ナトリウムである、請求項７または８に記載の光劣化抑制材。The photodegradation inhibitor according to claim 7 or 8, wherein the surfactant is sodium citrate. 更に有機系、及び／又は、無機系のバインダを含有する請求項１～９のいずれか１項に記載の光劣化抑制材。 The photodegradation inhibitor according to any one of claims 1 to 9, further comprising an organic and / or an inorganic binder. 前記結晶体の価電子帯のエネルギー位置は、ＯＨThe energy position of the valence band of the crystal is OH. －- 酸化準位よりも高い、請求項１～１０のいずれか１項に記載の光劣化抑制材。The photodegradation inhibitor according to any one of claims 1 to 10, which is higher than the oxidation level.
JP2019095277A 2019-05-21 2019-05-21 Photodegradation inhibitor Active JP7318911B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019095277A JP7318911B2 (en) 2019-05-21 2019-05-21 Photodegradation inhibitor

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Application Number Priority Date Filing Date Title
JP2019095277A JP7318911B2 (en) 2019-05-21 2019-05-21 Photodegradation inhibitor

Publications (3)

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JP2020189764A JP2020189764A (en) 2020-11-26
JP2020189764A5 true JP2020189764A5 (en) 2022-04-07
JP7318911B2 JP7318911B2 (en) 2023-08-01

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Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6567278B2 (en) 2014-01-23 2019-08-28 国立研究開発法人物質・材料研究機構 Photocatalyst production method, hydrogen generation method, and photocatalyst for hydrogen generation
CN107293615B (en) 2017-05-19 2019-03-29 扬州大学 The preparation method of flexible substrate over-assemble Sn3O4 nanometer sheet for photodetector

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