JP2020164985A - Magnetron plasma film deposition apparatus - Google Patents

Abstract

To provide a magnetron plasma film deposition apparatus capable of depositing a film at a high film deposition rate.SOLUTION: A magnetron sputtering film deposition apparatus 1 comprises a film deposition roll 14 and a magnetron plasma unit 15 arranged opposite the film deposition roll 14. The magnetron plasma unit 15 comprises a rotary target 16 whose axis extends in the same direction with an axis of the film deposition roll 14, and a magnet unit 200 which is arranged radially inside the rotary target 16. Then an angle θ found as mentioned below is 30 degrees or less. On an outer peripheral surface of the rotary target 16, a tangent-directional component of magnetic flux density of the rotary target 16 is measured to one side in a circumferential direction of the rotary target 16. Here, θ is the angle that a segment LS1 connecting a point MAX_P corresponding to a maximum tangent-directional component of the magnetic flux density and the center of the rotary target 16 and a segment LS2 connecting a point MIN_P corresponding to a minimum tangent-directional component of the magnetic flux density and the center contain.SELECTED DRAWING: Figure 3

Description

The present invention relates to a magnetron plasma film forming apparatus.

Conventionally, as a magnetron plasma film forming apparatus, a magnetron sputtering film forming apparatus including a film forming roll and a magnetron sputtering unit facing the film forming roll is known.

In this magnetron sputtering apparatus, a magnetic field is generated by a magnetron sputtering unit, which holds electrons emitted from the target for a long time and improves the efficiency of sputtering.

For example, a magnetron sputtering film forming apparatus including a cylinder and four magnets held in a yoke inside the cylinder has been proposed (see, for example, Patent Document 1 below). In Patent Document 1, each of the four magnets has a rectangular cross section having a fixed side fixed to the yoke and an opposite side on the opposite side in a cross-sectional view.

Japanese Unexamined Patent Publication No. 2017-15582

However, in the configuration disclosed in Patent Document 1, a tunnel-shaped magnetic field corresponding to the adjacent outer magnet and inner magnet is generated.

In recent years, a magnetron plasma film forming apparatus is required to have a high film forming speed.

However, with the configuration of Patent Document 1 described above, there is a limit to obtaining a high film forming speed.

The present invention provides a magnetron plasma film forming apparatus capable of forming a film at a high film forming speed.

The present invention (1) includes a film forming roll and a magnetron plasma unit arranged to face the film forming roll, and the magnetron plasma unit is a rotary target whose axis extends in the same direction as the axis of the film forming roll. A magnetron plasma film forming apparatus including a magnet unit arranged inside the rotary target in the radial direction and having an angle θ of 30 degrees or less determined below is included.

On the outer peripheral surface of the rotary target, the tangential component of the magnetic flux density of the rotary target is measured in one direction in the circumferential direction of the rotary target.
The angle θ formed by the point corresponding to the maximum tangential component of the magnetic flux density and the line segment connecting the center of the rotary target, and the point corresponding to the minimum tangential component of the magnetic flux density and the line segment connecting the center. To ask.

In this magnetron plasma film forming apparatus, since the above-mentioned angle θ is as narrow as 30 degrees or less, the plasma corresponding to the maximum tangential component in the magnetic flux density and the tangential component having the minimum magnetic flux density on the outer peripheral surface of the rotary target. Since the distance to the corresponding plasma in the circumferential direction is short, it is possible to consolidate the region where the density of electrons emitted from the rotary target is high. As a result, a film can be formed at a high film forming speed.

In the present invention (2), the magnet unit includes a first magnetic pole portion, a second magnetic pole portion, a third magnetic pole portion, and a fourth magnetic pole portion in order along the circumferential direction, and the second magnetic pole portion and the second magnetic pole portion and the magnet unit The third magnetic pole portion has one of the N pole and the S pole, and the first magnetic pole portion and the fourth magnetic pole portion have the other magnetic pole, and the cross section is orthogonal to the axis of the rotary target. Visually, the virtual line passing through the second magnetic pole portion and along the magnetizing direction and the virtual line passing through the third magnetic pole portion and along the magnetizing direction converge while approaching the center of the film forming roll. Includes the magnetron plasma deposition apparatus according to (1), which intersects so as to.

According to this magnetron plasma film forming apparatus, the angle θ can be surely narrowed to 30 degrees or less. Therefore, the film can be formed at a higher film forming speed.

In the present invention (3), the magnet unit includes a first magnetic pole portion, a second magnetic pole portion, a third magnetic pole portion, and a fourth magnetic pole portion in order along the circumferential direction, and the second magnetic pole portion and the second magnetic pole portion and the magnet unit The third magnetic pole portion has one of the N pole and the S pole, and the first magnetic pole portion and the fourth magnetic pole portion have the other magnetic pole, and the cross section is orthogonal to the axis of the rotary target. Visually, the virtual line passing through the first magnetic pole portion and along the magnetizing direction and the virtual line passing through the fourth magnetic pole portion and along the magnetizing direction converge while moving away from the film forming roll. Includes the magnetron plasma deposition apparatus according to (1) or (2), which intersects with.

According to this magnetron plasma film forming apparatus, the angle θ can be surely narrowed to 30 degrees or less. Therefore, the film can be formed at a higher film forming speed.

In the present invention (4), the magnet unit includes a first magnetic pole portion, a second magnetic pole portion, a third magnetic pole portion, and a fourth magnetic pole portion in order along the circumferential direction, and the first magnetic pole portion and the magnet unit. Each of the second magnetic pole portion, the third magnetic pole portion, and the fourth magnetic pole portion is fixed to the fixing member, and is fixed to the fixing member in a cross-sectional view orthogonal to the axis of the rotary target. It has a substantially rectangular shape having a fixed side to be formed and a opposite side located on the opposite side of the fixed side, and the ratio (D / L) of the separation distance D between the opposite side and the fixed side to the length L of the opposite side. ) Is 1.5 or more, and includes the magnetron plasma film forming apparatus according to any one of (1) to (3).

According to this magnetron plasma film forming apparatus, the maximum and minimum of the magnetic flux density at two points can be made larger and smaller. Therefore, plasma having a high electron density can be generated, and the film forming efficiency is excellent.

The magnetron plasma film forming apparatus of the present invention can form a film at a high film forming speed.

FIG. 1 is a cross-sectional view of a magnetron sputtering film forming apparatus according to an embodiment of the present invention. FIG. 2 is an enlarged cross-sectional view of a magnetron plasma unit provided in the magnetron sputtering film forming apparatus of FIG. FIG. 3 is a cross-sectional view of the magnet unit shown in FIG. FIG. 4 is a graph showing the relationship between the tangential component of the magnetic flux density of the rotary targets of Example 1 and Comparative Example 1 and the angle θ. 5A to 5B are examples in which the first magnetic pole portion and the fourth magnetic pole portion are N poles, and the second magnetic pole portion and the third magnetic pole portion are S poles. FIG. 5A is a cross-sectional view and FIG. 5B shows. , Is a graph showing the relationship between the tangential component of the magnetic flux density of the rotary target and the angle θ. FIG. 6 is a cross-sectional view of the magnet unit of Comparative Example 1.

A magnetron sputtering film forming apparatus according to an embodiment of the magnetron plasma film forming apparatus of the present invention will be described with reference to FIGS. 1 to 4.

In FIG. 3, the magnet unit 20 (described later) is drawn without hatching in order to clearly show the magnetization directions (arrows) of the first magnetic pole portions 31 to 4th magnetic pole portions 34 (described later). ..

As shown in FIG. 1, the magnetron sputtering film forming apparatus 1 is a roll-to-roll type film forming apparatus that forms (deposits) a film 42 on the base material 41 while conveying the base material 41. The magnetron sputtering film forming apparatus 1 includes a conveying section 2 and a film forming section 3.

The transport unit 2 includes a transport casing 11, a delivery roll 5, a take-up roll 6, a guide roll 27, and a vacuum pump 26.

The transport casing 11 has a substantially box shape extending along the transport direction. The transport casing 11 houses the delivery roll 5, the take-up roll 6, and the guide roll 27.

Each of the delivery roll 5 and the take-up roll 6 is arranged at each of the upstream side end portion and the downstream side end portion in the transport direction in the transport casing 11.

A plurality of guide rolls 27 are arranged between the delivery roll 5 and the take-up roll 6. The plurality of guide rolls 27 are arranged so that the base material 41 is wound around the film forming roll 14.

The vacuum pump 26 is provided in the transport casing 11.

The film forming section 3 includes a film forming casing 12, a film forming roll 14, and a plurality of magnetron plasma units 15.

The film-forming casing 12 is continuous with the transport casing 11 and constitutes a vacuum chamber together with the transport casing 11. The film-forming casing 12 has a substantially box shape. The film-forming casing 12 has a plurality of partition walls 25. The plurality of partition walls 25 extend toward the film forming roll 14. The film-forming casing 12 is provided with a sputter gas supply device (not shown). The film forming casing 12 accommodates the film forming roll 14 and the plurality of magnetron plasma units 15.

The axis of the film forming roll 14 is along the width direction orthogonal to the transport direction and the thickness direction of the base material 41.

The plurality of magnetron plasma units 15 are arranged so as to face each other on the radial outer side of the film forming roll 14. The plurality of magnetron plasma units 15 are arranged at intervals along the circumferential direction of the film forming roll 14.

The magnetron plasma unit 15 adjacent to each other in the circumferential direction is partitioned by a partition wall 25. The space partitioned by the partition wall 25 constitutes the film forming chamber 10. A plurality of film forming chambers 10 are partitioned in the film forming casing 12 (vacuum chamber). One magnetron plasma unit 15 is provided in one film forming chamber 10. Each of the plurality of magnetron plasma units 15 includes a plasma casing 23 and a first unit 24 and a second unit 28.

As shown in FIG. 2, the plasma casing 23 has a substantially box shape with one side open toward the film forming roll 14. The plasma casing 23 extends along the axis of the film forming roll 14. The plasma casing 23 houses the first unit 24 and the second unit 28. The first unit 24 and the second unit 28 are arranged adjacent to each other at intervals along the circumferential direction of the film forming roll 14. The first unit 24 and the second unit 28 face the film forming roll 14 through the opening of the plasma casing 23.

The first unit 24 and the second unit 28 have the same configuration except for the rotation direction of the rotary target 16 (described later). Therefore, the first unit 24 will be described in detail, and the second unit 28 will be briefly described.

As shown in FIG. 3, the first unit 24 includes a rotary target 16 and a magnet unit 20.

The rotary target 16 has a cylindrical shape and has an axis AL (center in a cross-sectional view) parallel to the axis of the film forming roll 14. The rotary target 16 can rotate (circulate) in the direction opposite to the rotation direction of the film forming roll 14, for example. The rotary target 16 is electrically connected to a cathode source (not shown), which allows it to act as a cathode. Further, a target material is laminated on the outer peripheral surface of the rotary target 16, that is, the rotary target 16 has a material for forming the film 42 on the outer peripheral surface. As the material, for example, at least one metal selected from the group consisting of In, Sn, Zn, Ga, Sb, Nb, Ti, Si, Zr, Mg, Al, Au, Ag, Cu, Pd, and W can be used. Examples include metal oxides. Specific examples thereof include indium-containing oxides such as indium tin oxide composite oxide (ITO), and antimony-containing oxides such as antimony tin composite oxide (ATO).

The magnet unit 20 is housed inside the rotary target 16 in the radial direction. The magnet unit 20 includes a fixing member 19, two first magnets 21, and two second magnets 22.

The fixing member 19 has a narrow plate shape extending in the axial direction of the film forming roll 14, and is called a yoke. The fixing member 19 includes one main surface (one surface in the thickness direction) 17 and the other main surface 18 (the other surface in the thickness direction). Both the one main surface 17 and the other main surface 18 are flat surfaces. One main surface 17 faces the film forming roll 14. The other main surface 18 is parallel to one main surface 17. Examples of the material of the fixing member 19 include a metal such as iron.

Each of the two first magnets 21 and the two second magnets 22 has a quadrangular prism shape extending along the axial direction of the film forming roll 14. The two first magnets 21 and the two second magnets 22 are fixed to one main surface 17 of the fixing member 19. The two first magnets 21 and the two second magnets 22 are arranged adjacent to each other in the width direction of the fixing member 19. Specifically, the two first magnets 21 and the two second magnets 22 are in contact with each other in the width direction.

The two first magnets 21 and the two second magnets 22 have a first magnetic pole portion 31 in a cross-sectional view along the width direction and the thickness direction (corresponding to the direction orthogonal to the axis of the rotary target 16) of the fixing member 19. The second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 are included.

The first magnetic pole portion 31, the second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 are arranged in order along one direction in the circumferential direction (the rotation direction of the rotary target 16). .. The first magnetic pole portion 31, the second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 are arranged in order so as to come into contact with each other toward one side in the width direction of the fixing member 19. ing.

The second magnetic pole portion 32 and the third magnetic pole portion 33 are composed of two first magnets 21. In these, the second magnetic pole portion 32 and the third magnetic pole portion 33 have, for example, an N pole. The first magnetic pole portion 31 and the fourth magnetic pole portion 34 are composed of, for example, a second magnet 22. The first magnetic pole portion 31 and the fourth magnetic pole portion 34 have an S pole.

In cross-sectional view, each of the first magnetic pole portion 31, the second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 has a substantially rectangular shape having the same shape. In a cross-sectional view, each of the first magnetic pole portion 31, the second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 is fixed to a fixed side 37 fixed to one main surface 17 of the fixing member 19. It has a substantially rectangular shape having an opposite side 38 located on the opposite side of the side 37 and two side sides 39 connecting both end edges thereof.

The fixed sides 37 of the first magnetic pole portion 31, the second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 are arranged on one of the main surfaces 17. The opposite sides 38 of the first magnetic pole portion 31, the second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 are parallel to one main surface 17 of the fixing member 19. The opposite side 38 of the first magnetic pole portion 31, the second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 is continuous along the width direction, and specifically, is flush with each other (one). Form a flat surface).

Further, each of the first magnetic pole portion 31, the second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 has a size in which the length in the thickness direction is longer than the length in the width direction. That is, the ratio (D / L) of the separation distance D between the opposite side 38 and the fixed side 37 with respect to the length L of the opposite side 38 is, for example, more than 1, preferably 1.4 or more, and more preferably 1.5. The above is more preferably 1.6 or more, and particularly preferably 1.7 or more. Moreover, the above-mentioned ratio (D / L) is also, for example, 6 or less. When the ratio (D / L) is equal to or higher than the above lower limit, the maximum magnetic flux density at the point MAX_P described later can be made larger, and the minimum magnetic flux density at the point MIN_P described later can be made smaller. As a result, the film 42 can be formed at a higher film forming speed.

In a cross-sectional view, the magnetization directions of the first magnetic pole portion 31, the second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 are the thickness directions of the fixing member 19 (the method of one main surface 17 of the fixing member 19). It is inclined in the line direction) (corresponding to the opposite direction of the fixed side 37 and the opposite side 38), and is also inclined in the width direction of the fixing member 19.

For example, the magnetization directions of the second magnetic pole portion 32 and the third magnetic pole portion 33 are inclined outward in the width direction of the fixing member 19 as they are separated from the film forming roll 14 in the normal direction of the fixing member 19. The magnetization directions of the first magnetic pole portion 31 and the fourth magnetic pole portion 34 are inclined outward in the width direction of the fixing member 19 as they approach the center of the film forming roll 14 in the normal direction of the fixing member 19.

More specifically, in a cross-sectional view, the virtual line IL2 that passes through the second magnetic pole portion 32 and follows the magnetization direction thereof and the virtual line IL3 that passes through the third magnetic pole portion 33 and follows the magnetization direction thereof are formed. It intersects so as to converge while approaching the center of the membrane roll 14. Therefore, the magnetic flux on the surface of the rotary target 16 can be concentrated by the intersection of the virtual line IL2 and the virtual line IL3. As a result, the two magnetic fields having a tunnel shape come close to each other, and the angle θ described later can be surely narrowed to 30 degrees or less. As a result, the film can be formed at a higher film forming speed.

The angle formed by the line segment from the intersection CP1 to the second magnetic pole 32 of the two virtual lines IL2 and IL3 and the line segment from the intersection CP1 to the third magnetic pole 33 is, for example, 135 degrees or less, preferably 90. The degree or less, more preferably 80 degrees or less, and for example, more than 20 degrees, preferably 30 degrees or more, more preferably 40 degrees or more.

On the other hand, in the cross-sectional view, the virtual line IL1 that passes through the first magnetic pole portion 31 and follows the magnetization direction and the virtual line IL4 that passes through the fourth magnetic pole portion 34 and follows the magnetization direction are from the film forming roll 14. Crosses so as to converge while moving away. Therefore, the magnetic flux on the surface of the rotary target 16 can be concentrated by the intersection of the virtual line IL1 and the virtual line IL4. As a result, the two magnetic fields having a tunnel shape come close to each other, the angle θ described later can be surely narrowed to 30 degrees or less, and the film can be formed at a higher film forming speed.

The angle formed by the line segment from the intersection CP2 to the first magnetic pole portion 31 of the two virtual lines IL1 and IL4 and the line segment from the intersection CP2 to the fourth magnetic pole portion 34 is, for example, 135 degrees or less, preferably 90. The degree or less, more preferably 80 degrees or less, and for example, more than 20 degrees, preferably 30 degrees or more, more preferably 40 degrees or more.

Examples of the material of the first magnet 21 and the second magnet 22 include permanent magnets such as neodymium magnets.

As shown in FIG. 2, the second unit 28 includes a rotary target 16 that can rotate in the same direction as the rotation direction of the film forming roll 14, and the magnet unit 20 described above.

Then, in this one embodiment, the angle θ obtained below is 30 degrees or less.

On the outer peripheral surface of the rotary target 16, the tangential component of the magnetic flux density is measured in one direction in the circumferential direction of the rotary target. The angle formed by the line segment LS1 connecting the center of the rotary target 16 and the point MAX_P corresponding to the maximum tangential component of the magnetic flux density and the line segment LS2 connecting the point MIN_P corresponding to the tangential component of the minimum magnetic flux density and the center. Find θ. The angle θ is obtained, for example, by simulating a magnetic field using commercially available software.

Here, the tangential component of the magnetic flux density obtained by the above simulation will be described.

As shown in FIG. 3, in the first unit 24, a tunnel-shaped first magnetic field MF1 (plural) from the opposite side 38 of the second magnetic pole portion 32 having the N pole to the opposite side 38 of the first magnetic pole portion 31 having the S pole. Draw at the point of) is generated. In this embodiment, since the second magnetic pole portion 32 is the N pole and the first magnetic pole portion 31 is the S pole, it is in the circumferential direction of the rotary target 16 and is from the first magnetic pole portion 31 to the second pole. By measuring the tangential component of the magnetic flux density in one direction toward the magnetic pole portion 32, the minimum magnetic flux density (that is, the strongest value of the magnetic field on the negative side) can be obtained (see MIN_P in FIG. 4).

Further, a tunnel-shaped second magnetic field MF2 (drawn at a plurality of points) is generated from the opposite side 38 of the third magnetic pole portion 33 having the N pole toward the opposite side 38 of the fourth magnetic pole portion 34 having the S pole. In this embodiment, since the third magnetic pole portion 33 is the north pole and the fourth magnetic pole portion 34 is the south pole, it is in the circumferential direction of the rotary target 16 and the third magnetic pole portion 33 to the fourth magnetic pole portion 33 to the fourth magnetic pole portion. By measuring the tangential component of the magnetic flux density in one direction toward 34, the maximum magnetic flux density (that is, the strongest value of the magnetic field on the positive side) can be obtained. (See MAX_P in FIG. 4).

Therefore, if the tangential component of the magnetic flux density is measured in the circumferential direction of the rotary target 16 in one direction from the first magnetic pole portion 31 to the fourth magnetic pole portion 34, it is usually the minimum as shown in FIG. And the maximum are observed in order.

The second unit 28 is the same as the first unit 24.

The point MAX_P corresponding to the maximum tangential direction component of the magnetic flux density and the point MIN_P corresponding to the minimum tangential direction component are the points corresponding to the two maximums in the absolute value of the tangential direction component of the magnetic flux density. It is synonymous.

The angle θ is the angle on the film forming roll 14 side of the angles formed by the two line segments LS1 and LS2 described above.

However, when the above-mentioned angle θ exceeds 30 degrees, as shown by the broken line in FIG. 4 and FIG. 6, the plasma corresponding to the maximum tangential component of the magnetic flux density is formed outside the rotary target 16 in the radial direction. , The distance in the circumferential direction from the plasma corresponding to the tangential component with the minimum magnetic flux density becomes long. Therefore, the region where the density of the electrons emitted from the rotary target 16 is high is dispersed. Therefore, there is a limit to forming a film at a high film forming speed.

On the other hand, in this one embodiment, as shown in FIG. 3, since the above-mentioned angle θ is as narrow as 30 degrees or less, the plasma corresponding to the maximum tangential component of the magnetic flux density on the radial outer side of the rotary target 16. , The distance in the circumferential direction from the plasma corresponding to the tangential component with the minimum magnetic flux density becomes closer. Therefore, the region where the density of electrons emitted from the rotary target 16 is high can be aggregated. Therefore, the film can be formed at a high film forming speed.

The above-mentioned film forming speed was obtained by actually forming the film 42 on the base material 41 using the magnetron sputtering film forming apparatus 1 and multiplying the thickness of the film 42 by the transport speed of the base material 41. The value is determined by dividing the value by the cathode voltage of the rotary target 16. The film formation rate is also called a dynamic rate. The unit of the film forming rate is, for example, [nm · m / sec / kW]. The film formation rate can also be determined by simulating a dilute fluid using commercially available software.

Preferably, the above-mentioned angle θ is 27 degrees or less, more preferably 26 degrees or less, still more preferably 25 degrees or less, and particularly preferably 23 degrees or less. Also, it is usually 10 degrees or higher. When the angle θ is equal to or higher than the above-mentioned lower limit, it is possible to suppress the magnetic flux density from becoming excessively low and continuously generate plasma.

Next, a method of forming the film 42 on the base material 41 using this magnetron sputtering film forming apparatus 1 will be described.

First, the magnetron sputtering film forming apparatus 1 shown in FIG. 1 is prepared.

Subsequently, the long base material 41 is set in the magnetron sputtering film forming apparatus 1. The base material 41 is not particularly limited, and examples thereof include a polymer film and a glass film (thin film glass). Examples of the polymer film include polyester films (polyethylene terephthalate (PET) film, polybutylene terephthalate film, polyethylene naphthalate film, etc.), polycarbonate films, olefin films (polyethylene film, polypropylene film, cycloolefin film, etc.). , Acrylic film, polyether sulfone film, polyarylate film, melamine film, polyamide film, polyimide film, cellulose film, polystyrene film.

In order to set the base material 41 in the magnetron sputtering film forming apparatus 1, as shown in FIG. 1, the base material 41 is wound around the delivery roll 5, and subsequently, one end portion of the base material 41 in the longitudinal direction is guided by a plurality of guides. While being guided by the roll 27, it is wound around the film forming roll 14 and wound around the winding roll 6.

Subsequently, the vacuum pump 26 is driven to evacuate the inside of the transport casing 11 and the film-forming casing 12. At the same time, sputter gas is supplied into the film-forming casing 12 from a sputter gas supply device (not shown). Examples of the sputter gas include an inert gas such as argon, for example, a reactive gas further containing oxygen.

Subsequently, the cathode voltage is applied to the rotary target 16 while continuously transporting the base material 41 from the sending roll 5 to the winding roll 6. As a result, electrons are emitted from the rotary target 16.

Then, the above-mentioned electrons are held for a long time in both the first magnetic field MF1 and the second magnetic field MF2 in the first unit 24 and the second unit 28, respectively.

Then, an atom derived from the sputter gas (specifically, an argon atom) efficiently collides with the rotary target 16, whereby particles of the material from the rotary target 16 are released on the outer peripheral surface of the film forming roll 14. It adheres to the base material 41. As a result, the film 42 is formed on the base material 41 by sputtering, as shown in FIG.

In this magnetron sputtering film forming apparatus 1, since the above-mentioned angle θ is as narrow as 30 degrees or less, the plasma corresponding to the tangential component having the maximum magnetic flux density and the minimum magnetic flux density outside the film forming roll 14 Since the distance from the plasma corresponding to the tangential component in the circumferential direction is short, it is possible to consolidate the region where the density of electrons emitted from the rotary target 16 is high. Therefore, the film 42 can be formed (filmed) on the base material 41 at a high film forming speed.

Further, in this magnetron sputtering film forming apparatus 1, in a cross-sectional view, a virtual line IL2 that passes through the second magnetic flux portion 32 and follows the magnetization direction thereof and a virtual line IL2 that passes through the third magnetic pole portion 33 and follows the magnetization direction. Since the IL3 intersects so as to converge while approaching the center of the film forming roll, the magnetic flux on the surface of the rotary target 16 can be concentrated. As a result, the two magnetic fields in the shape of a tunnel approach each other, and the above-mentioned angle θ can be surely narrowed to 30 degrees or less. Therefore, the film 42 can be formed at a higher film forming speed.

Further, in this magnetron sputtering film forming apparatus 1, in a cross-sectional view, a virtual line IL1 that passes through the first magnetic flux portion 31 and follows the magnetization direction thereof and a virtual line IL1 that passes through the fourth magnetic pole portion 34 and follows the magnetization direction. Since the IL4 intersects with the film forming roll so as to converge away from the rotary target 16, the magnetic flux on the surface of the rotary target 16 can be concentrated. As a result, the two magnetic fields in the shape of a tunnel approach each other, and the angle θ can be surely narrowed to 30 degrees or less. Therefore, the film 42 can be formed at a higher film forming speed.

In this magnetron sputtering film forming apparatus 1, in the first magnetic pole portions 31 to the fourth magnetic pole portions 34, the ratio (D / L) of the separation distance D between the fixed side 37 and the opposite side 38 with respect to the length L of the fixed side 37 is When it is 1.5 or more, the maximum tangential component of the magnetic flux density can be made larger, and the tangential component of the minimum magnetic flux density can be made smaller. Therefore, the film 42 can be formed at a higher film forming speed. Can be efficiently formed on the base material 41.

In the present embodiment, since the magnetron plasma unit 15 includes a rotatable cylindrical rotary target 16, the rotary target 16 can rotate even if the above-mentioned angle θ is narrowed to 30 degrees or less. In the rotary target 16, the thickness is uniformly thinned in the circumferential direction. Therefore, the film 42 can be formed by uniform sputtering and at a high film forming speed.

Further, in one embodiment, the magnetization directions of the first magnetic pole portion 31, the second magnetic pole portion 32, the third magnetic pole portion 33, and the fourth magnetic pole portion 34 are inclined with respect to the normal direction and the width direction of the fixing member 19. However, the method for setting the angle θ with respect to the magnetic flux density to 30 degrees or less is not limited to the above.

<Modification example>
In each of the following modifications, the same reference numerals will be given to the same members and processes as in the above-described embodiment, and detailed description thereof will be omitted. In addition, each modification can exert the same effect as that of one embodiment, except for special mention. Further, one embodiment and a modification thereof can be appropriately combined.

In one embodiment, the magnetron sputtering film forming apparatus 1 is exemplified as an example of the magnetron plasma film forming apparatus of the present invention, but a plasma CVD film forming apparatus can also be exemplified.

In one embodiment, the second magnetic pole portion 32 and the third magnetic pole portion 33 have an N pole, and the first magnetic pole portion 31 and the fourth magnetic pole portion 34 have an S pole, but vice versa.

That is, as shown in FIG. 5A, the first magnetic pole portion 31 and the fourth magnetic pole portion 34 are N poles, and the second magnetic pole portion 32 and the third magnetic pole portion 33 are S poles. Then, if the tangential component of the magnetic flux density is measured from the first magnetic pole portion 31 toward the fourth magnetic pole portion 34 in the circumferential direction of the rotary target 16, as shown in FIG. 5B, first, the maximum in the first magnetic field MF1 is obtained. (MAX_P) is obtained, then the minimum (MIN_P) is obtained in the second magnetic field MF2, and the angle θ is obtained from these. Even with this modification, the same effect as that of one embodiment can be obtained.

Examples, production examples, comparative examples, and comparative production examples are shown below, and the present invention will be described in more detail. The present invention is not limited to Examples, Production Examples, Comparative Examples, and Comparative Production Examples. In addition, specific numerical values such as the compounding ratio (ratio), physical property values, and parameters used in the following description are the compounding ratios (ratio) corresponding to those described in the above-mentioned "Form for carrying out the invention". ), Physical property values, parameters, etc. can be replaced with the upper limit (numerical value defined as "less than or equal to" or "less than") or the lower limit (numerical value defined as "greater than or equal to" or "excess").

Example 1
The magnetron sputtering film forming apparatus 1 described in one embodiment was prepared.

Each of the first magnetic pole portions 31 to the fourth magnetic pole portions 34 has the cross-sectional view size shown in Table 1, and the magnetization directions are shown in FIG. 3 and are as shown in Table 1.

Example 2
Magnetron sputtering film forming apparatus in the same manner as in Example 1 except that the magnetic poles of the first magnetic pole portion 31 and the second magnetic pole portion 32 are replaced, and the magnetic poles of the third magnetic pole portion 33 and the fourth magnetic pole portion 34 are replaced. I prepared 1.

Comparative Example 1
The magnetron sputtering film forming apparatus 1 was prepared in the same manner as in Example 1 except that the cross-sectional view size of the first magnetic pole portions 31 to 4 magnetic pole portions 34 was changed as shown in Table 1.

Each of the first magnetic pole portions 31 to the fourth magnetic pole portions 34 has the cross-sectional view size shown in Table 1, and the magnetization directions are shown in FIG. 6 and are as shown in Table 1.

Example 3 to Example 7
The magnetron sputtering film forming apparatus as in Example 1 except that the magnetization directions (IL1 to IL4) and / or the cross-sectional view size of the first magnetic pole portions 31 to 4 magnetic pole portions 34 were changed as shown in Table 1. I prepared 1.

In the first magnetic pole portions 31 to 4 magnetic pole portions 34 in the above-described Examples to Comparative Examples, the magnetization directions are adjusted in advance so as to be the magnetization directions shown in Table 1.

Manufacturing example 1
Using the magnetron sputtering film forming apparatus 1 of Example 1, a film 42 was formed on the base material 41 in accordance with the description in Table 2.

Comparative manufacturing example 1
Using the magnetron sputtering film forming apparatus 1 of Comparative Example 1, a film 42 was formed on the base material 41 in accordance with the description in Table 2.

<Evaluation>
The following items were evaluated for the magnetron sputtering film forming apparatus 1 of Examples 1 and 2 and Comparative Example 1 and the film forming properties of each of Production Example 1 and Comparative Production Example 1. The results are shown in Tables 1 and 3.

(1) Angle θ
The angle θ was obtained by simulating the magnetic field by the finite element method using the following software. Further, the relationship between the measurement direction (one direction in the circumferential direction) in the measurement of the magnetic flux density and the angle θ is shown in FIG. 4 (Example 1 and Comparative Example 1) and FIG. 5B (Example 2).

Software name: JMAG (manufactured by JSOL)
Calculation method: Finite element method (2) Film formation speed A
The film formation rate was determined by simulating a dilute fluid using the following software. The film formation rate of Examples 1 to 7 was determined as a ratio of the film formation rate of Comparative Example 1 set to 100.

Software name: DSMC-Neurals (manufactured by Wavefront)
Calculation method: Direct Simulation Monte Carlo (DSMC) method (3) Film formation speed B
The film formation speed (dynamic rate) of Production Example 1 and Comparative Production Example 1 was actually measured. The film formation rate (dynamic rate) was obtained by dividing the value obtained by multiplying the thickness of the film 42 by the transfer rate of the base material 41 by the cathode voltage of the rotary target 16. Compared with the film forming rate of Comparative Production Example 1, the film forming rate of Production Example 1 was 27% higher.

As can be seen from Tables 1 and 3, the film formation rate A (calculated value) of Example 1 and Comparative Example 1 and the film formation rate B (measured value) of Production Example 1 and Comparative Production Example 1 are formed. The membrane velocity (and even the degree of improvement) is somewhat off. This is due to the following reasons.

That is, in the simulation used for calculating the film formation rate A, the behavior of the particles emitted from the rotary target 16 is approximated and calculated in the cross section in the direction orthogonal to the axis of the rotary target 16 (so-called two-dimensional cross section). That is, the behavior of the particles emitted from the rotary target 16 in the axial direction is not taken into consideration. On the other hand, in the measurement (actual measurement) of the film formation speed B, the action in the axial direction of the rotary target 16 is included (added) in the measured value.

(4) Specific Resistance The films 42 of Production Example 1 and Comparative Production Example 1 were annealed by heating. The surface resistance of the film 42 after annealing was measured by a four-probe method. Compared with the surface resistance of Comparative Production Example 1, the surface resistance of Production Example 1 was 15% lower. That is, it was excellent in electrical conductivity.

1 Magnetron sputtering film forming apparatus 14 film forming roll 15 Magnetron plasma unit 16 rotary target 19 fixing member 20 magnet unit 31 first magnetic pole 32 second magnetic pole 33 third magnetic pole 34 fourth magnetic pole 37 fixed side 38 opposite side L opposite side Length D Separation distance LS1 Line segment connecting the point and center corresponding to the maximum tangential component of the magnetic flux density LS2 Line segment connecting the point and center corresponding to the minimum tangential component of the magnetic flux density IL1 First magnetic pole from the intersection Line segment to the part IL2 Line segment from the intersection to the second magnetic pole part IL3 Line segment from the intersection to the third magnetic pole part IL4 Line segment from the intersection to the fourth magnetic pole part

Claims (4)

Film formation roll and
A magnetron plasma unit arranged to face the film forming roll is provided.
The magnetron plasma unit is
A rotary target whose axis extends in the same direction as the axis of the film forming roll,
A magnet unit arranged inside the rotary target in the radial direction is provided.
A magnetron plasma film forming apparatus, characterized in that the angle θ obtained below is 30 degrees or less.
On the outer peripheral surface of the rotary target, the tangential component of the magnetic flux density of the rotary target is measured in one direction in the circumferential direction of the rotary target.
The angle θ formed by the point corresponding to the maximum tangential component of the magnetic flux density and the line segment connecting the center of the rotary target, and the point corresponding to the minimum tangential component of the magnetic flux density and the line segment connecting the center. To ask. The magnet unit includes a first magnetic pole portion, a second magnetic pole portion, a third magnetic pole portion, and a fourth magnetic pole portion in order along the circumferential direction.
The second magnetic pole portion and the third magnetic pole portion have one of the north pole and the south pole.
The first magnetic pole portion and the fourth magnetic pole portion have the other magnetic pole,
In a cross-sectional view orthogonal to the axis of the rotary target, the virtual line passing through the second magnetic pole portion and along the magnetization direction and the virtual line passing through the third magnetic pole portion and along the magnetization direction are described above. The magnetron plasma film forming apparatus according to claim 1, wherein the magnetron plasma film forming apparatus intersects so as to converge while approaching the center of the film forming roll. The magnet unit includes a first magnetic pole portion, a second magnetic pole portion, a third magnetic pole portion, and a fourth magnetic pole portion in order along the circumferential direction.
The second magnetic pole portion and the third magnetic pole portion have one of the north pole and the south pole.
The first magnetic pole portion and the fourth magnetic pole portion have the other magnetic pole,
In a cross-sectional view orthogonal to the axis of the rotary target, a virtual line passing through the first magnetic pole portion and along the magnetization direction thereof and a virtual line passing through the fourth magnetic pole portion and along the magnetization direction are described as described above. The magnetron plasma film forming apparatus according to claim 1 or 2, wherein the magnetron plasma film forming apparatus intersects the film forming roll so as to converge while moving away from the film forming roll. The magnet unit includes a first magnetic pole portion, a second magnetic pole portion, a third magnetic pole portion, and a fourth magnetic pole portion in order along the circumferential direction.
Each of the first magnetic pole portion, the second magnetic pole portion, the third magnetic pole portion, and the fourth magnetic pole portion is fixed to the fixing member, and in a cross-sectional view orthogonal to the axis of the rotary target. , Forming a substantially rectangular shape having a fixed side fixed to the fixing member and an opposite side located on the opposite side to the fixed side.
Any one of claims 1 to 3, wherein the ratio (D / L) of the separation distance D between the opposite side and the fixed side to the length L of the opposite side is 1.5 or more. The magnetron plasma film forming apparatus according to the above.

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