JP2020161690A - Substrate processing system, substrate processing method, storage medium, and controller for substrate processing system - Google Patents

Abstract

To perform appropriate control in substrate processing performed throughout application processing, exposure processing, and etching processing to improve a yield of the substrate processing.SOLUTION: A substrate processing system performs processing on a substrate using a plurality of processing units, the substrate processing system comprising: an application processing unit for applying processing liquid on the substrate to form a process film on the substrate; an exposure processing unit for performing pattern exposure processing on the substrate on which the process film is formed; development processing unit for performing development processing on the substrate on which the exposure processing has been performed to form a pattern for etching processing on the substrate; an etching processing unit for performing the etching processing on the substrate on which the development processing has been performed; a measurement unit for measuring a shape of a peripheral part of the substrate; and a control unit. The control unit is configured to acquire shape information on the substrate measured by the measurement unit and, on the basis of the acquired shape information, output control information for changing an exposure condition for the peripheral part of the substrate of the exposure processing unit and an etching condition for the peripheral part of the substrate of the etching processing unit.SELECTED DRAWING: Figure 1

Description

The present disclosure relates to a substrate processing system, a substrate processing method, a storage medium, and a control device for the substrate processing system.

Patent Document 1 describes a step of acquiring a height distribution of the peripheral end portion of the surface of the substrate along the radial direction of the substrate, and then the height of the peripheral end portion based on the height distribution. A substrate processing method comprising a step of forming an underlayer film on the entire surface of the substrate so as to correct the depression of the substrate, and subsequently a step of forming a resist film on the entire surface of the underlayer film. Is described.

Republished Patent No. 2017-0473555

The technique according to the present disclosure improves the yield of the substrate processing by appropriately controlling the substrate processing performed through the coating process, the exposure process, and the etching process.

One aspect of the present disclosure is a substrate processing system in which a plurality of processing units process a substrate, the coating processing unit applying a processing liquid to the substrate to form a processing film on the substrate, and the processing. An exposure processing unit that performs pattern exposure processing on a substrate on which a film is formed, and a development processing unit that develops an etching processing pattern on the exposed substrate by developing the exposed substrate. It includes an etching processing unit that performs etching processing on the developed substrate, a measurement unit that measures the shape of the peripheral portion of the substrate, and a control unit, and the control unit is measured by the measurement unit. The shape information of the substrate is acquired, and based on the acquired shape information, control information for changing the exposure condition of the peripheral portion of the substrate in the exposure processing unit and the etching condition of the peripheral portion of the substrate in the etching processing unit is output. It is configured to do.

According to the present disclosure, in the substrate processing performed through the coating process, the exposure process, and the etching process, appropriate control can be performed to improve the yield of the substrate process.

It is the description which shows the outline of the structure of the substrate processing system which concerns on this Embodiment. It is explanatory drawing which shows typically the plane of the coating development processing apparatus used in the substrate processing system of FIG. It is explanatory drawing which shows typically the side cross section of the underlayer film forming unit mounted on the coating development processing apparatus used in the substrate processing system of FIG. It is explanatory drawing which shows typically the side cross section of the etching processing apparatus used in the substrate processing system of FIG. It is a graph which shows the relationship between the result of measuring the CD in the device formation region of the peripheral part of a wafer after the pattern formation processing by the coating development processing apparatus used in the substrate processing system of FIG. 1 and the position of a wafer. It is sectional drawing of the peripheral part of the wafer after the pattern formation processing by the coating development processing apparatus used in the substrate processing system of FIG. It is sectional drawing of the peripheral part of the wafer when the wafer of FIG. 6 is corrected at the time of the etching process and the etching process is performed. It is a graph which shows the relationship between the result of measuring the CD in the device formation region of the peripheral part of the wafer and the position of a wafer when the wafer of FIG. 6 is corrected at the time of the etching process and the etching process is performed. It is sectional drawing of the peripheral part of the wafer when the pattern formation process is performed after the correction which increases the film thickness of the peripheral part of the underlayer film. It is a graph which shows the relationship between the result of measuring the CD in the device formation region of the peripheral part of the wafer after the pattern formation of the wafer shown in FIG. 9 and the position of a wafer. It is a graph which shows the relationship between the result of measuring the CD in the device formation region of the peripheral part of the wafer and the position of a wafer when the wafer shown in FIG. 9 is etched as it is. It is sectional drawing of the peripheral part of the wafer when the film thickness of the peripheral part of the lower layer film is corrected to make the resist pattern on a wafer uniform height. It is sectional drawing which shows the state of the line width of the region where the underlayer film near the center part is thin when the wafer shown in FIG. 12 is etched without correction. It is sectional drawing which shows the state of the line width of the region where the underlayer film near the center part is thick when the wafer shown in FIG. 12 is etched without correction. It is a figure which shows an example of a control table.

In the semiconductor device manufacturing process, a resist pattern is formed on a semiconductor wafer (hereinafter, may be referred to as a wafer) as a substrate in a photolithography process, which is one of the semiconductor device manufacturing processes. The wafer on which the resist pattern is formed is then subjected to, for example, an etching process.

In order to form this resist pattern, for example, the wafer is conveyed to a coating and developing apparatus that coats and develops a resist, and after the resist coating treatment is performed, it is conveyed to an exposure processing apparatus to expose a desired pattern. To.

The peripheral end of the surface of the wafer is configured as an inclined surface that descends outward. Further, as described in Patent Document 1, in a wafer in which the formation of a film and the removal of the film by CMP (Chemical Mechanical Polishing) are repeatedly performed, the height of the upper end of the inclined surface on the inclined surface is higher. The amount of Edge Roll-Off (edge roll-off), which is the difference (the amount of depression) from the height of the position deviated by a predetermined distance from the upper end of the inclined surface to the outside of the wafer, tends to be large.

On the other hand, in the exposure processing apparatus, leveling correction for tilting the wafer is performed so that the focus surface and the surface of the wafer in the region where the exposure processing is performed are aligned, but the edge roll-off is relatively large at the peripheral end of the wafer. It becomes large and becomes defocused (abnormal focus). When defocusing occurs, the size of the CD (Critical Dimensions), which is the line width of the resist pattern, fluctuates from the design value, so that the yield of the semiconductor product in this peripheral region decreases.

The technique disclosed in Patent Document 1 acquires a height distribution along the radial direction of the wafer and corrects a drop in height at the peripheral end of the wafer based on the height distribution. An underlayer film is formed on the entire surface of the wafer.

However, recent fine patterns may not be sufficient even with such a technique, and further improvement has been desired in this respect. The technique according to the present disclosure performs more appropriate control than before in the substrate treatment performed through the coating treatment, the exposure treatment, and the etching treatment, and particularly improves the yield of the device forming region in the peripheral portion of the wafer.

Hereinafter, the substrate processing system according to this embodiment will be described with reference to the drawings. In this specification, elements having substantially the same functional configuration are designated by the same reference numerals, so that duplicate description will be omitted.

<Board processing system>
FIG. 1 is an explanatory diagram showing an outline of the substrate processing system 1 according to the present embodiment. In this substrate processing system 1, a coating processing unit 10 that forms a processing film, for example, a lower layer film located under a resist film on a wafer as a substrate, and an etching processing pattern on the wafer after exposure processing. The etching processing pattern is formed in the coating development processing device 2 equipped with the development processing unit 20 for forming the resist film, the exposure processing device 3 as the exposure processing unit for exposing the pattern after the resist film is formed, and the coating development processing device 2. It has an etching processing apparatus 4 as an etching processing unit that performs an etching process on the formed wafer.

Further, the substrate processing system 1 has a measuring unit 5 for measuring the shape of the wafer, for example, the shape of the peripheral portion of the wafer, for example, the height. As shown in FIG. 1, the measuring unit 5 may be installed as a measuring device independent of the coating and developing processing apparatus 2, the exposure processing apparatus 3, and the etching processing apparatus 4, and may be mounted on the coating and developing processing apparatus 2. It may be an inspection device (for example, a film thickness measuring device or an edge camera that monitors an edge portion of a wafer). Further, the measuring unit 5 may be a leveling sensor provided in the exposure processing device 3. The leveling sensor is used to measure the shape of a wafer to be exposed, for example, before performing the leveling correction described above.

Then, the substrate processing system 1 acquires the shape information of the wafer output from the measuring unit 5, and based on the acquired shape information, the processing conditions are applied to the coating development processing device 2, the exposure processing device 3, and the etching processing device 4. It has a control device 6 as a control unit that outputs control information for changing the.

In the present embodiment, the control device 6 adjusts the film thickness of the treatment film (lower layer film) under the resist film, for example, the film thickness of the peripheral portion of the SOC film or the SOG film, with respect to the coating development processing device 2. Can be output to the coating processing unit 10. Further, the control device 6 outputs to the exposure processing device 3 control information for changing the exposure condition of the peripheral portion of the wafer, for example, control information for adjusting the dose amount and controlling the focus point. Is possible. Furthermore, the control device 6 can control the etching rate at the time of etching the peripheral portion of the wafer with respect to the etching processing device 4. That is, the control device 6 can output the shape information from the measuring unit 5 and the control signal based on one or both of the exposure conditions in the exposure processing device 3 before the etching process.

<Applying and developing processing equipment>
The coating and developing processing apparatus 2 adopted in the present embodiment has, for example, the configuration shown in FIG. That is, the coating and developing processing apparatus 2 includes a cassette station 30 into which a cassette C accommodating a plurality of wafers W is carried in and out, and a processing station 31 provided with a plurality of various processing units for performing predetermined processing on the wafer W. Have. Then, the coating and developing processing apparatus 2 integrally connects the cassette station 30, the processing station 31, and the interface station 32 that transfers the wafer W between the processing station 31 and the exposure processing apparatus 3 adjacent to the processing station 31. It has the above-mentioned configuration.

The processing station 31 is provided with a plurality of, for example, four blocks G1, G2, G3, and G4 having various units. The first block G1 is provided with a plurality of liquid treatment units, for example, a development treatment unit, a lower layer film forming unit for forming an SOC film or an SOG film, and a resist film forming unit. The development processing unit constitutes the development processing unit 20 described above. The underlayer film forming unit constitutes the above-mentioned coating treatment unit 10.

The second block G2 is provided with, for example, a heat treatment unit. The heat treatment unit performs heat treatment such as heating and cooling of the wafer W. A plurality of wafer W transfer units are provided in the third block G3 and the fourth block G4. Then, the transfer of the wafer W between each of these units and between the third block G3 and the fourth block G4 and each unit is performed by the transfer devices 34 and 35. Further, the wafer W is transferred between the cassette C and the transfer unit of the third block G3 by the transfer device 36, and the wafer between the transfer unit 37 of the interface station 32 and the transfer unit of the fourth block G4. The transport of W is performed by the transport device 38. Then, the transfer device 38 carries in and out the wafer W to and from the exposure processing device 3.

In the coating development processing apparatus 2 having the above configuration, the coating of the base film, the coating of the resist film, the development treatment after the exposure treatment, and the necessary heat treatment are performed on the wafer W.

<Lower layer film forming unit>
The underlayer film forming unit has, for example, the configuration shown in FIG. That is, the underlayer film forming unit 40 has a processing container 41 that can be closed inside. A wafer W loading / unloading port (not shown) is formed on the side surface of the processing container 41. A spin chuck 42 for holding and rotating the wafer W is provided in the central portion of the processing container 41. The spin chuck 42 has a horizontal upper surface, and the upper surface is provided with, for example, a suction port (not shown) for sucking the wafer W. By suction from this suction port, the wafer W can be sucked and held on the spin chuck 42.

The spin chuck 42 has a chuck drive mechanism 43 provided with, for example, a motor, and can be rotated to a predetermined speed by the chuck drive mechanism 43. Further, the chuck drive mechanism 43 is provided with a lifting drive source (not shown) such as a cylinder, and the spin chuck 42 can move up and down.

A cup 44 is provided around the spin chuck 42 to receive and collect the liquid scattered or dropped from the wafer W. An exhaust pipe 45 for discharging the collected liquid to the outside of the processing container 41 and an exhaust pipe 46 for exhausting the atmosphere inside the cup 44 to the outside of the processing container 41 are connected to the lower surface of the cup 44. An exhaust device 47 is connected to the exhaust pipe 46.

The coating nozzle 48 for coating the underlayer film on the surface of the wafer W on the spin chuck 42 is supported by an arm that can move in a predetermined direction in the processing container 41. The coating nozzle 48 is connected to a supply source 49 of a liquid raw material for forming the underlayer film.

According to the underlayer film forming unit 40 having the above structure, an underlayer film having a desired thickness can be formed on the surface of the wafer W by a so-called spin coating method. The lower layer film referred to here means a treated film formed under the resist film.

<Exposure processing equipment>
The exposure processing apparatus 3 is configured to perform an exposure process of a predetermined pattern on the wafer W on which the resist film is formed on the surface.

<Etching processing equipment>
The etching processing apparatus 4 has, for example, the configuration shown in FIG. That is, the etching processing apparatus 4 is configured as, for example, a plasma etching apparatus. The etching processing apparatus 4 is provided with an airtight processing container 50 for performing plasma processing on the wafer W inside.

A mounting table 51 is provided at the center of the bottom of the processing container 50. An elevating pin (not shown) is provided inside the mounting table 51, and the wafer W is transferred to and from an external transport arm (not shown).

The mounting table 51 also serves as a lower electrode and is connected to the high frequency power supply 52. The high frequency power supply 52 is a bias power supply for applying a bias for drawing ions in the plasma to the mounting table 51, that is, the lower electrode. A heater 53 for heating the wafer W is provided inside the mounting table 51. The heater 53 generates heat by supplying electric power from the power source 54, and the heating temperature can be adjusted by the amount of electric power.

An annular focus ring 55 is provided on the peripheral edge of the mounting table 51. The wafer W to be subjected to the etching process is placed in the focus ring 55. The focus ring 55 forms a ring member for adjusting the state of plasma, and has a function of preventing diffusion of plasma around the wafer and effectively incident reactive ions onto the wafer. The mounted wafer W is attracted and held by an electrostatic chuck (not shown) on the mounting table 51.

An exhaust pipe 56 is provided at the bottom of the processing container 50. The exhaust pipe 56 is connected to an exhaust device 57 such as a turbo molecular pump, and the inside of the processing container 50 can have a predetermined decompression atmosphere.

A shower head 58 is provided on the ceiling of the processing container 50 so as to face the mounting table 51 via an insulating member. The shower head 58 is connected to the processing gas supply source 60 via the supply path 59. A buffer space 61 is formed inside the shower head 58. A large number of supply ports 62 are formed on the lower surface side of the buffer space 61. As a result, the processing gas supplied from the processing gas supply source 60 to the buffer space 61 is uniformly supplied to the wafer W on the mounting table 51 via the supply port 62. The shower head 58 also serves as an upper electrode and is connected to a high frequency power supply 63 for plasma generation.

According to the etching processing apparatus 4 having such a configuration, a predetermined plasma etching processing can be performed on the wafer W on which the resist pattern is formed on the surface.

<Control device>
The control device 6 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores programs that control these coating development processing devices 2, an exposure processing device 3, an etching processing device 4, and a measuring unit 5 in the substrate processing system 1. Further, the control device 6 stores a table (control table) of a control example described later. For example, a control example of the control table is selected from the input shape information from the measurement unit 5, and a coating development processing device is used. 2. A control signal is output to any one or a plurality of the exposure processing device 3 and the etching processing device 4. The program may be recorded on a storage medium that can be read by a computer, and may be installed on the control device 6 from the storage medium.

<Control example 1>
Next, the substrate processing by the substrate processing system 1 will be described. First, the graph shown in FIG. 5 shows the outer peripheral position of the wafer and the design CD when a pattern is formed by directly exposing the wafer W having a large edge roll-off amount at the peripheral edge as shown in FIG. The relationship between the difference between the actual CD and the actual CD is shown. That is, the horizontal axis indicates the position of the wafer, and 30 (mm) indicates a point 30 mm in the central direction from the outer peripheral end portion of the wafer. The vertical axis shows the difference between the design CD value and the actual pattern CD value, and 0 (nm) is the design CD value and the pattern-formed CD value. Indicates that they match. The graph of FIG. 5 is obtained by measuring and plotting the CD after pattern formation at a plurality of device forming regions on the periphery of the wafer W at 20 points and expressing this by an approximate curve.

Note that FIG. 6 shows a cross section of the wafer W after the resist pattern was formed in the coating and developing processing apparatus 2, and the substrate configuration of the lower layer below the Low-k film was omitted, and the wafer W was formed on the Low-k film. The TiN film 71, the silicon oxide film 72, the SOC film 73, the SOG film 74, and the resist film 7 are drawn. In FIG. 6, the right end is the peripheral edge of the wafer W. As shown in the figure, this wafer W has a large edge roll-off at the peripheral edge portion.

It has been found that the leveling correction of the exposure processing apparatus 3 whose focus tolerance becomes stricter with miniaturization is insufficient for such a wafer having a large edge roll-off. That is, when the wafer W shown in FIG. 6 is exposed after the leveling correction of the exposure processing apparatus 3, and then the etching process is performed after the development process, the value of CD is obtained at the peripheral edge of the wafer W as shown in FIG. It can be confirmed that it is getting smaller. Therefore, the yield of the device in the peripheral region of the wafer W is lowered.

Therefore, for example, the following control by the control device 6 is performed. That is, if the wafer W shown in FIG. 6 is etched as it is, it is presumed that the etching rate increases at the peripheral edge portion and the CD value decreases. Therefore, in such a case, information for controlling the etching rate at the peripheral edge of the wafer W is output as a control signal to the etching processing apparatus 4.

Specifically, according to the etching processing apparatus 4 shown in FIG. 4, the temperature of the heater 53, for example, lowering the height of the focus ring 55 in order to suppress the etching rate at the peripheral portion of the wafer W. The temperature of the focus ring 55 is lowered by lowering the temperature of the wafer W, and the temperature of the peripheral portion of the wafer W is lowered. In addition, it is also effective to adjust the flow rate from the processing gas supply source 60 to reduce the flow rate of the processing gas supplied to the wafer W, particularly the flow rate of the processing gas supplied to the peripheral portion of the wafer W. These controls may be performed in combination of 1, or 2 or more. By such control, the etching rate at the peripheral portion of the wafer W can be lowered.

As a result of performing the correction for the etching processing apparatus 4 described above, the cross section of the wafer W after the etching processing is as shown in FIG. Then, for the wafer W after the etching process, as in the graph of FIG. 5, the CD was measured in the device formation region at the peripheral portion, the difference from the design was calculated, and the result of expressing this by an approximate curve is shown in the graph of FIG. Indicated.

As can be seen from the graph of FIG. 8, the CD is slightly higher at a position about 10 mm from the peripheral edge of the wafer W, but it is greatly improved as a whole as compared with the case of FIG. 5, especially the peripheral edge. Then, it is almost the same value as the design value. Therefore, it can be expected that the yield in the device forming region of the peripheral portion of the wafer W will be improved.

<Control example 2>
Next, another control example will be described. That is, as shown in FIG. 6, for the wafer W in which the edge roll-off at the peripheral portion is large, the coating processing portion 20 of the coating development processing apparatus 2 is controlled to increase the film thickness of the peripheral portion. You may do it. In such a case, for example, control information for increasing the film thickness of the peripheral portion of the SOC film 73 or the SOG film 74 is output to the coating processing unit 20 of the coating development processing apparatus 2. Of course, the film thicknesses of both treated films may be controlled, but it is more accurate to control only one treated film.

In this case, the thicker the film thickness of the treated film to be laminated, the easier it is to control. Therefore, for example, when forming the SOC film 73, which is the first treated film, the coating process for increasing the film thickness of the peripheral portion is controlled. Explaining this in line with the lower layer film forming unit 40 shown in FIG. 3, for example, control of the rotation speed of the spin chuck 42, control of the exhaust amount of the exhaust device 47, change of the shape of the cup 44, change of the height position, etc. Will be done. For example, if the exhaust flow rate is increased, the film thickness of the peripheral portion can be increased.

In addition to the above-mentioned control of the underlayer film forming unit 40, changes in the coating recipe itself, for example, supply of solvent at the time of pre-wetting before application, flow rate of the treatment liquid, adjustment of temperature and humidity in the underlayer film forming unit 40, etc. You may do it. In addition, the baking temperature, time, etc. after the coating treatment may be controlled. These controls may be one or a combination of two or more.

The cross section of the wafer W after the pattern is formed after the underlayer film forming unit 40 is corrected and applied, is as shown in FIG. The edge roll-off at the peripheral portion of the lower layer of the resist film 75 could be eliminated by the portion 73a in which the coating treatment of the SOC film 73 was corrected to thicken the peripheral portion. Therefore, the line width of the pattern of the resist film 75 is uniform in height, and the line width is also substantially uniform.

The graph of FIG. 10 shows the result of measuring the CD before the etching process in the device forming region on the peripheral edge of the corrected wafer W and expressing it with an approximate curve.

As can be seen from the graph of FIG. 10, the value of CD drops a little from the peripheral edge of the wafer W to 5 mm, but it is greatly improved as compared with the case of FIG.

However, when the wafer W after correcting the film thickness of the SOC film 73 is etched, the result of expressing the CD after the etching treatment in the device forming region of the peripheral portion of the wafer W by an approximate curve is shown in FIG. It became as shown in the graph. As can be seen from this result, the CD before the etching treatment has an improved drop in the peripheral portion, but the CD after the etching treatment has not been improved correspondingly.

The cause of this is considered as follows. That is, as shown in FIG. 12, although the film thickness of the SOG film 74 on the lower side of the resist film 75 is flat, the film thickness of the SOC film 73 itself to be etched on the lower side is in the region near the center. The film thickness (b) in the region closer to the peripheral edge is thicker than the film thickness (a). Therefore, if the etching process is performed as it is, as shown in FIG. 13, the pattern of the resist film having the film thickness (a) in the region near the center is over-etched and the line width becomes thicker, and conversely, the region near the peripheral edge portion. This is because the film thickness (b) of No. 1 has a smaller etching amount, and as a result, as shown in FIG. 14, the line width is narrower than that of the region near the center.

Therefore, it has been found that, for example, simply by flattening the film thickness of the underlayer film, it may not be possible to make the CD after the etching treatment uniform depending on the thickness of the underlayer film. In order to improve this, it is effective to also control the etching processing apparatus 4 described above.

On the other hand, even if the film thickness (a) of the region near the center of FIG. 13 and the film thickness (b) of the region near the peripheral edge of the SOC film 73 are different, the silicon oxide film on the lower side of the SOC film 73 If the etching rates of 72 and the SOC film 73 are the same, such a situation can be prevented. Therefore, when adjusting the thickness of the lower layer film of the resist film 75 (third treated film), the treated film (first) below the treated film (second treated film) of the lower layer film to be subjected to the adjustment. The CD after the etching treatment can be made uniform by applying a treatment film having the same etching rate as that of the base material of the substrate or the substrate, and adjusting the film thickness.

<Control example 3>
By the way, not only the size of the edge roll-off of the peripheral edge portion but also the point in the radial direction of the wafer W where the drop starts affects the selection of the correction described above. Therefore, a suitable correction can be realized by selecting and combining the above-mentioned control targets in advance according to the case of these combinations.

FIG. 15 shows a control table of the control pattern at that time. In the figure, feature A represents from which point in the radial direction of the wafer W the drop starts, and feature B represents the amount of drop (edge roll-off amount).

For example, the "diametrical width of the dip" of feature A is "wide" and "narrow" at the end of the point where the dip of the coating film starts in the radial direction from the end to the center of the wafer W. When the distance from the part is long, it is displayed as "wide", and when it is close to the end, it is displayed as "narrow". The threshold value can be arbitrarily set depending on conditions and the like, but for example, a position 10 mm from the end can be set as a branch point.

Further, the "deepness" and "shallow" of the feature B indicate the depth of the amount of depression, and the threshold value can be arbitrarily set depending on the conditions, for example, the amount of depression is "deep". "" Means that, for example, when the amount of depression is 40 nm as a boundary, the case where the amount of depression is further depressed is displayed as "deep", and the case where the amount of depression does not reach that value is displayed as "shallow".

Further, in the column of the type of correction to be executed in FIG. 15, "coating correction" means film thickness correction at the time of coating processing in the coating processing unit 10 of the coating development processing apparatus 2, and is referred to as "etching correction". There is a correction of the etching rate at the peripheral portion of the wafer described above in the etching processing apparatus 4, and "exposure compensation" means a correction of the dose amount and the focus control in the exposure processing apparatus 3. There is. Further, in the column of FIG. 15, "◎" indicates that it is extremely necessary, "○" is necessary, and "Δ" is not so necessary.

According to the control table of FIG. 15, in the case of case a, since the amount of depression is large and the depression starts from a position away from the peripheral edge portion, it is easy to correct to increase the thickness of the film by "coating correction". Is. When the amount of depression is large, the thickness of the treated film of not only one layer but also two layers may be corrected. However, since the thickness of the coating film is corrected, it is useful to perform etching correction at the same time. Further, in order to suppress the influence of etching correction, it is useful to perform exposure correction at the same time.

In the case of case b, since the amount of depression is shallow and the depression starts from a position away from the peripheral edge, there is not much need for "coating correction". Therefore, it is useful to perform etching correction. Further, in order to suppress the influence of etching correction, it is useful to perform exposure correction at the same time.

In the case of case c, although the amount of dip is deep, the dip starts from a position close to the peripheral edge, so that it is difficult to correct by the exposure processing apparatus 3. Therefore, the coating processing unit 10 is corrected to increase the film thickness in the vicinity of the peripheral edge portion. However, since the film thickness increases, it is useful to perform etching correction at the same time. In order to suppress the influence of etching correction, it is useful to also perform exposure correction.

In the case of case d, the amount of dip is shallow, and the dip starts from a position close to the peripheral edge, so that the need for correction is low as a whole. Therefore, it is less necessary to correct the film thickness by the coating processing unit 10. However, etching correction and exposure correction associated therewith are necessary.

The control table as described above is stored in the control device 6, and it is determined which of the cases a to d corresponds to based on the shape information obtained by the measuring unit 5. Then, based on the determination result, the control device 6 outputs a control signal for performing the correction suitable for the above cases a to d to the coating development processing device 2, the etching processing device 4, and the exposure processing device 3. , Each processing device makes a correction based on it. As a result, the line width of the pattern in the device forming region near the peripheral edge of the wafer can be automatically corrected, and the yield of the device in the peripheral portion of the wafer can be improved as compared with the conventional case.

The above-mentioned cases a to d were based on the "diametrical width of the depression" of the feature A and the "depth of the depression" of the feature B, and were divided into two cases and four cases were assumed. For example, each degree may be further classified into, for example, three, and a control table may be created assuming six cases. This makes it possible to perform more appropriate and fine control.
Furthermore, not only features A and B, but also other features, such as the uniformity of the dip width in the circumferential direction, are evaluated and classified based on the shape information, and the cases of "uniformity" and "non-uniformity" are controlled. -May be adopted for bulls.

Furthermore, as described above, with regard to the correction of edge roll-off, from the viewpoint that a large amount of correction can be secured in the order of etching processing device 4> exposure processing device 3> coating development processing device 2, for example, the following A control example such as is also proposed.

That is, first, the threshold value of the absolute value of the amount of depression of the peripheral portion of the wafer W covered by the coating development processing device 2, the etching processing device 4, and the exposure processing device 3 is determined in advance. For example, let the threshold values be two points α and β (α <β). Then, the absolute amount of the drop amount of the peripheral portion of the wafer W is measured by the measuring unit 5, and the following control is performed based on the measurement result D.
(1) When α> D ≧ 0, control information is output to the exposure processing device 3.
(2) When β> D ≧ α, control information is output to the etching processing device 4 and the exposure processing device 3.
(3) When D ≧ β, the control information is output to the coating development processing device 2, the etching processing device 4, and the exposure processing device 3.
By performing such control, correction by these three processing devices in the photolithography process can be automatically performed, and the yield of the device in the peripheral region of the wafer W can be improved.

Further, the control based on the control signal may perform hoodback control for the coating development processing device 2 and the exposure processing device 3, and feed forward for the exposure processing device 3 and the etching processing device 4. It may be the one that controls.

<Control frequency>
The timing of execution of each of the above-mentioned control examples may be, for example, for each wafer to be processed, or may be performed for each lot.

It should be considered that the embodiments disclosed this time are exemplary in all respects and not restrictive. The above embodiments may be omitted, replaced, or modified in various forms without departing from the scope of the appended claims and their gist.

The following configurations also belong to the technical scope of the present disclosure.
(1) A substrate processing system in which a substrate is processed by a plurality of processing units.
A coating treatment unit that applies a treatment liquid to a substrate to form a treatment film on the substrate,
An exposure processing unit that performs pattern exposure processing on the substrate on which the processing film is formed, and an exposure processing unit.
A developing unit that forms an etching pattern on the exposed substrate by developing the exposed substrate, and a developing unit.
An etching processing unit that performs etching processing on the developed substrate,
A measuring unit that measures the shape of the peripheral edge of the substrate,
With a control unit
The control unit acquires the shape information of the substrate measured by the measuring unit, and based on the acquired shape information, the exposure conditions of the peripheral edge of the substrate in the exposure processing unit and the peripheral edge of the substrate in the etching processing unit. A substrate processing system that is configured to output control information for changing the etching conditions of.
(2) The control unit is configured to output control information for adjusting the film thickness of the peripheral portion of the processing film formed in the coating processing unit based on the acquired shape information. The substrate processing system according to (1).
(3) The treated membrane contains a first treated membrane, a second treated membrane, and a third treated membrane in this order from the lower layer, which are formed by applying different types of treatment liquids.
The control unit is configured to output control information for adjusting the film thickness of at least one of the first treated film and the second treated film, according to (2). Board processing system.
(4) Control information for adjusting the film thickness of the treatment film having the same etching rate as that of another treatment film or substrate base located below the treatment film coated by the coating treatment unit is output. The substrate processing system according to (2), which is configured.
(5) The line width of the formed pattern of the etching process is measured, and based on the measurement result of the line width, control information for changing the etching conditions of the peripheral portion of the substrate in the etching process section is output. The substrate processing system according to any one of (1) to (4).
(6) The substrate processing system according to any one of (1) to (5), wherein the measuring unit is a film thickness measuring device that measures a film thickness after a coating process.
(7) A substrate processing method for processing a substrate in a substrate processing system including a plurality of processing units.
The substrate processing system is
A coating treatment unit that applies a treatment liquid to a substrate to form a treatment film on the substrate,
An exposure processing unit that performs pattern exposure processing on the substrate on which the processing film is formed, and an exposure processing unit.
A developing unit that forms an etching pattern on the exposed substrate by developing the exposed substrate, and a developing unit.
An etching processing unit that performs etching processing on the developed substrate,
It is provided with a measuring unit for measuring the shape of the peripheral portion of the substrate.
Then, the shape information of the substrate measured by the measuring unit is acquired, and based on the acquired shape information, the exposure conditions of the peripheral portion of the substrate in the exposure processing unit and the etching conditions of the peripheral portion of the substrate in the etching processing unit are determined. A board processing method that changes and processes the board.
(8) A computer-readable storage medium containing a program that controls a control unit so that the substrate processing method described in (7) is executed by the substrate processing system.
(9) A coating processing unit that applies a processing liquid to a substrate to form a processing film on the substrate, an exposure processing unit that performs pattern exposure processing on the substrate on which the processing film is formed, and the above. A development processing unit that forms an etching processing pattern on the exposed substrate by developing the substrate, an etching processing unit that performs an etching treatment on the developed substrate, and a peripheral edge of the substrate. A control device for a substrate processing system including a measuring unit for measuring the shape of the unit.
The shape information of the substrate measured by the measuring unit is acquired, and based on the acquired shape information, the exposure conditions of the peripheral portion of the substrate in the exposure processing unit and the etching conditions of the peripheral portion of the substrate in the etching processing unit are changed. A control device for a board processing system that is configured to output control information for

1 Substrate processing system 2 Coating development processing equipment 3 Exposure processing equipment 4 Etching processing equipment 5 Measuring unit 6 Control device 10 Coating processing unit 20 Development processing unit 40 Underlayer film forming unit 41 Processing container 42 Spin chuck 43 Chuck drive mechanism 44 Cup 46 Exhaust Pipe 47 Exhaust device 50 Processing container 51 Mounting stand 52 High frequency power supply 53 Heater 55 Focus ring 56 Exhaust pipe 57 Exhaust device 59 Supply path 58 Shower head 60 Processing gas supply system source W wafer

Claims (9)

A board processing system that processes a board with multiple processing units.
A coating treatment unit that applies a treatment liquid to a substrate to form a treatment film on the substrate,
An exposure processing unit that performs pattern exposure processing on the substrate on which the processing film is formed, and an exposure processing unit.
A developing unit that forms an etching pattern on the exposed substrate by developing the exposed substrate, and a developing unit.
An etching processing unit that performs etching processing on the developed substrate,
A measuring unit that measures the shape of the peripheral edge of the substrate,
With a control unit
The control unit acquires the shape information of the substrate measured by the measuring unit, and based on the acquired shape information, the exposure conditions of the peripheral edge of the substrate in the exposure processing unit and the peripheral edge of the substrate in the etching processing unit. A substrate processing system that is configured to output control information for changing the etching conditions of. The control unit is configured to output control information for adjusting the film thickness of the peripheral portion of the processing film formed in the coating processing unit based on the acquired shape information. The substrate processing system described in. The treated membrane contains a first treated membrane, a second treated membrane, and a third treated membrane in this order from the lower layer, which are formed by applying different types of treatment liquids.
The second aspect of the present invention, wherein the control unit is configured to output control information for adjusting the film thickness of at least one of the first treated film and the second treated film. Board processing system. It is configured to output control information for adjusting the film thickness of the treatment film having the same etching rate as that of another treatment film or substrate base located below the treatment film coated by the coating treatment unit. The substrate processing system according to claim 2. The line width of the formed pattern of the etching process is measured, and based on the measurement result of the line width, control information for changing the etching conditions of the peripheral edge of the substrate in the etching process is output. The substrate processing system according to any one of claims 1 to 4. The substrate processing system according to any one of claims 1 to 5, wherein the measuring unit is a film thickness measuring device that measures a film thickness after a coating process. It is a substrate processing method that processes a substrate in a substrate processing system equipped with a plurality of processing units.
The substrate processing system is
A coating treatment unit that applies a treatment liquid to a substrate to form a treatment film on the substrate,
An exposure processing unit that performs pattern exposure processing on the substrate on which the processing film is formed, and an exposure processing unit.
A developing unit that forms an etching pattern on the exposed substrate by developing the exposed substrate, and a developing unit.
An etching processing unit that performs etching processing on the developed substrate,
A measuring unit for measuring the shape of the peripheral edge of the substrate is provided.
The shape information of the substrate measured by the measuring unit is acquired, and based on the acquired shape information, the exposure conditions of the peripheral portion of the substrate in the exposure processing unit and the etching conditions of the peripheral portion of the substrate in the etching processing unit are changed. A substrate processing method for processing a substrate. A computer-readable storage medium containing a program for controlling a control unit so that the substrate processing method according to claim 7 is executed by the substrate processing system. A coating processing unit that applies a processing liquid to a substrate to form a processing film on the substrate, an exposure processing unit that performs pattern exposure processing on the substrate on which the processing film is formed, and the exposure processing The shape of the development processing unit that forms an etching processing pattern on the substrate by developing the substrate, the etching processing unit that performs the etching treatment on the developed substrate, and the peripheral portion of the substrate. It is a control device of a substrate processing system including a measuring unit for measuring
The shape information of the substrate measured by the measuring unit is acquired, and based on the acquired shape information, the exposure conditions of the peripheral portion of the substrate in the exposure processing unit and the etching conditions of the peripheral portion of the substrate in the etching processing unit are changed. A control device for a board processing system that is configured to output control information for

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