JP2002141274A - Measuring apparatus for film thickness and its method - Google Patents

Measuring apparatus for film thickness and its method

Info

Publication number
JP2002141274A
JP2002141274A JP2000337765A JP2000337765A JP2002141274A JP 2002141274 A JP2002141274 A JP 2002141274A JP 2000337765 A JP2000337765 A JP 2000337765A JP 2000337765 A JP2000337765 A JP 2000337765A JP 2002141274 A JP2002141274 A JP 2002141274A
Authority
JP
Japan
Prior art keywords
spectrum
substrate
probe
film thickness
reflector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000337765A
Other languages
Japanese (ja)
Other versions
JP3625761B2 (en
Inventor
Taiji Iwashita
Ryoichi Kamimura
Masahiro Nakazuru
Kunie Ogata
Kimiya Sakaguchi
Hiroshi Tomita
良一 上村
雅浩 中鶴
公也 坂口
浩 富田
泰治 岩下
久仁恵 緒方
Original Assignee
Tokyo Electron Ltd
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, 東京エレクトロン株式会社 filed Critical Tokyo Electron Ltd
Priority to JP2000337765A priority Critical patent/JP3625761B2/en
Publication of JP2002141274A publication Critical patent/JP2002141274A/en
Application granted granted Critical
Publication of JP3625761B2 publication Critical patent/JP3625761B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

(57) [Summary] [PROBLEMS] To reduce the number of processes in a film thickness measuring device,
To facilitate measurement work. A mounting section for holding a wafer, and a light source are provided.
A spectroscope unit 53 including the spectroscope 4 and the spectroscope 55; a probe 51 provided to face the mounting section 6; and a probe 51 connected to the spectroscope unit 53 by an optical fiber 52; In the film thickness measuring unit 4 including the drive unit 42 for relatively moving the probe 51, the surface of the placement unit 6 facing the probe 51 is reflected so that a part thereof faces the probe 51. The body 62 is embedded.
Before measuring the thickness of the resist film, the reflection spectrum A of the reflector 62 is measured, and the calibration is performed by comparing the spectrum A with the reference spectrum of the reflector 62 measured at the time of setup. The transfer of the bare silicon wafer becomes unnecessary, and the number of steps is reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for measuring the thickness of, for example, a resist film formed on a substrate such as a semiconductor wafer or an LCD substrate (glass substrate for a liquid crystal display).

[0002]

2. Description of the Related Art A technique called photolithography performed in a manufacturing process of a semiconductor device or an LCD is a substrate such as a semiconductor wafer (hereinafter, referred to as a "wafer").
A resist film is formed by applying a resist solution to the substrate, the resist film is exposed using a photomask, and then subjected to a development process to form a desired resist pattern on the substrate.

When a resist pattern is formed by the above-described technique, exposure and development are performed under processing conditions corresponding to the thickness of the resist film, so that the thickness is required to be within a predetermined size. However, the processing state of the resist solution coating processing is such that the actual film thickness does not reach the target film thickness even when processing is performed under constant processing conditions due to fluctuations in temperature, humidity, etc., the state of the wafer surface, or pressure. It may deviate from the thickness.

Therefore, conventionally, after performing the photolithography technique in a system in which an exposure apparatus is connected to, for example, a coating and developing apparatus for performing a coating process and a developing process of a resist solution, the substrate is processed every time a predetermined number of substrates are processed. Sampling, transporting the substrate to a film thickness measurement unit provided separately from the coating and developing apparatus to measure the film thickness, and determine whether the processing conditions of the resist liquid coating process are appropriate based on the measurement result, The processing conditions are corrected based on the determination so that the resist film thickness of the substrate sent to the manufacturing line thereafter approaches the target value.

The film thickness measuring unit measures the film thickness by, for example, an optical interference type film thickness meter, irradiates a light beam from a light source to a substrate surface, and obtains a spectrum based on the reflected light of the light beam. The film thickness is detected based on the spectrum. The principle of this film thickness measurement will be described with reference to FIG. 14. First, the relationship between the wavelength of light and the reflectivity of the wafer W is obtained. At this time, first, the bare silicon wafer shown in FIG. The spectrum is measured, and then the spectrum of the film-coated wafer on which the resist film shown in FIG. 12 is formed is measured. In the spectrum obtained in this way, (Spectrum 1 of wafer with film)
2)-(Bare silicon wafer spectrum 11) is the strength characteristic of the resist film, and the film thickness is detected by analyzing this data.

[0006]

In the above-mentioned film thickness measuring unit, if the light source is deteriorated, the spectrum 11 itself of the bare silicon wafer is disturbed and the reliability is not ensured. The spectrum 11 of the bare silicon wafer is measured every measurement, and it is checked whether the spectrum 11 is correct. This operation is called calibration.

Since this calibration is performed every time the film thickness is measured, the bare silicon wafer must be transported to the film thickness measuring unit each time. When a wafer is transferred, the transfer of the wafer W is combined, and the number of steps in the film thickness measuring unit is increased, which complicates the film thickness inspection work.

The present invention has been made in view of such circumstances, and an object of the present invention is to reduce the number of film thickness inspection steps when measuring the film thickness of a thin film formed on a substrate with a film thickness measuring device. The object of the present invention is to facilitate the inspection work of the film thickness by reducing the thickness.

[0009]

According to the present invention, there is provided a film thickness measuring apparatus comprising: a mounting portion for holding a substrate substantially horizontally with a thin film forming surface facing up; a spectroscope unit including a light source and a spectroscope; And a probe, which is provided to face the substrate mounting surface of the mounting section and is connected to the spectroscope unit by an optical fiber, and relatively moves the mounting section and the probe in a substantially horizontal direction. And a driving mechanism for causing the thin film forming surface of the substrate to irradiate light to obtain a spectrum of reflected light and to detect a film thickness based on the spectrum. In order not to collide with this substrate when the substrate is mounted on, a reflector is embedded in the substrate mounting surface of the mounting portion so that a part thereof faces the probe,
Before measuring the thickness of the thin film formed on the substrate, the reflector and the probe are opposed to each other to irradiate the reflector with light, and the spectrum of the reflected light is measured.

According to another aspect of the present invention, there is provided a mounting portion for holding a substrate substantially horizontally with a thin film forming surface facing up, a spectroscope unit including a light source and a spectroscope, and a substrate mounting device of the mounting portion. Provided to face the surface, a probe connected to the spectrometer unit and an optical fiber, a driving mechanism for relatively moving the mounting portion and the probe in a substantially horizontal direction,
In a film thickness measuring device for irradiating light to the thin film forming surface of the substrate to obtain a reflected light spectrum and detecting a film thickness based on the spectrum, a substantially horizontal support for holding a reflector is provided. A member, and a horizontal drive mechanism for relatively moving the probe and the reflector in a substantially horizontal direction, before measuring the thickness of a thin film formed on a substrate, the reflector and the probe And irradiating the reflector with light so as to face each other, and measuring the spectrum of the reflected light.

[0011] In the film thickness measuring apparatus having such a configuration, a mounting portion provided inside the measuring chamber for holding the substrate substantially horizontally, and movable in a substantially horizontal direction relative to the mounting portion described above. A film thickness measuring device having a spectroscope unit including a light source and a spectroscope, and a probe connected by an optical fiber, irradiates light to the thin film forming surface of the substrate to measure the spectrum of the reflected light. Obtaining a reflection spectrum of a reflector provided inside the measurement chamber, and using the reference spectrum as a reference spectrum, in the film thickness measurement method for detecting a film thickness based on the spectrum, A reflection spectrum of the reflector is obtained by placing a substrate on which no is formed, obtaining a reflection spectrum of the substrate, and using the reflection spectrum as a substrate spectrum, and measuring a film thickness of a thin film formed on the substrate. Get
Making this a first spectrum, calculating a difference spectrum between the reference spectrum and the first spectrum,
Setting the first difference spectrum as a first difference spectrum, and, if the first difference spectrum is within a first allowable value, mounting the substrate on which the thin film is formed on the mounting portion and reflecting the reflection spectrum of the substrate. And making this a second spectrum;
Calculating a difference spectrum between the second spectrum and the substrate spectrum, and detecting a thickness of the thin film based on the calculated difference spectrum.

In this invention, before measuring the thickness of the thin film formed on the substrate, the so-called calibration is performed by measuring the spectrum of the reflector provided inside the measurement chamber. In addition, since it is not necessary to transport a bare silicon wafer for each calibration, the number of steps is reduced, so that a film thickness measurement operation can be easily performed.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a coating and developing apparatus provided with a film thickness measuring apparatus according to the present invention will be described below. FIG.
And FIG. 2 shows that the coating and developing apparatus 100 is
FIG. 2 is a plan view and a schematic view showing the entire configuration of a resist pattern forming apparatus A1 connected to FIG.

First, the overall configuration of the coating and developing apparatus 100 will be briefly described. In the figure, reference numeral 21 denotes a carrier station for loading and unloading a carrier C containing, for example, a semiconductor wafer (hereinafter, referred to as a wafer) W, which is 25 substrates.
Is provided with a carrier mounting portion 22 for mounting the information. The transfer means 23 takes out the wafer W as a substrate from the carrier C, and places the taken-out wafer W in the processing section S 1 provided on the back side of the carrier station 21.
It is configured to be movable left and right, back and forth, up and down, and rotatable around a vertical axis.

A main transport means 24 is provided at the center of the processing section S1. A coating unit 3A and a developing unit 3B are provided on the right side of the processing station S1, for example, as viewed from the carrier station 21 so as to surround the main transporting means 24. Shelf units U1, U2, U3 in which heating and cooling system units and the like are stacked in multiple stages are arranged on the side and the back side, respectively. In this example, two coating units 3A and two developing units 3B are provided, and the coating unit 3A is arranged on the lower side of the developing unit 3B.

The shelf units U1, U2, and U3 are formed by stacking a plurality of units. For example, in addition to a heating unit and a cooling unit, a wafer transfer unit 25, a hydrophobizing unit, and the like are allocated vertically. . The main transport unit 24 is configured to be able to move up and down, move forward and backward, and rotate around a vertical axis.
2, U3 and coating unit 25 and developing unit 26
Has a role of transporting the wafer W between them. However, FIG.
Here, the transfer means 23 and the main transport means 24 are not illustrated for convenience.

The processing unit S1 includes an interface unit S2
Are connected to the exposure apparatus 200 via the. The interface section S2 includes a transfer means 26, a buffer cassette C0, and a film thickness measuring unit 4 serving as a film thickness measuring device. The transfer means 26 is movable up and down, left and right, back and forth and vertically, for example. It is rotatable about an axis, and transfers the wafer W between the processing section S1, the exposure apparatus 200, the buffer cassette C0, and the film thickness measuring unit 4.

Here, the above-mentioned resist pattern forming apparatus A
1, the carrier C is first loaded into the carrier mounting portion 22 from the outside, and the transfer arm 23 transfers the wafer W from the inside of the carrier C.
Is taken out. The wafer W is transferred from the transfer arm 23 to the main transfer means 24 via the transfer unit 25 (see FIG. 2) of the shelf unit U2, and further transferred to the shelf unit U.
2 (or U1 and U3) are sequentially transported to a predetermined processing unit such as a hydrophobizing process and a cooling process.

Subsequently, after the resist solution is applied to the wafer W in the coating unit 2 and further heated to evaporate the solvent of the resist solution, the wafer W is transferred from the transfer unit, which cannot be seen in the drawing of the shelf unit U3, via the interface unit S2. It is sent to the exposure apparatus 200. When measuring the film thickness of the resist film formed on the wafer W, the wafer W is carried into the film thickness measuring unit 4 in the interface section S2.

The wafer W exposed by the exposure apparatus 200
Is the transfer unit 25 of the shelf unit U3 in the reverse route.
Is returned to the processing unit S1 via the main transport unit 24, and is transported to the developing unit 3B by the main transport unit 24, where the developing unit 3B performs the developing process. More specifically, the wafer W is subjected to a heating process and a cooling process before the developing process. The developed wafer W is delivered to the delivery arm 23 along a path reverse to the above, and
Is returned to the original carrier C placed on the carrier C.

Here, the coating unit 3A, the developing unit 3B and the film thickness measuring unit 4 will be described. First, an example of the coating unit 3A will be described with reference to FIG. 3. Reference numeral 31 denotes a spin chuck as a substrate holding unit, which is configured to hold the wafer W horizontally by vacuum suction. The spin chuck 31 can be rotated around a vertical axis by a drive unit 32 including a motor and a lifting unit,
And it can be moved up and down. A liquid receiving cup 33 is provided around the spin chuck 31 and surrounds a side portion extending from the wafer W to the spin chuck 31 and has a concave portion formed all around the lower side.
An exhaust pipe 34 and a drain pipe 35 are connected to the bottom surface of 3. A resist liquid supply nozzle 36 is provided above the liquid receiving cup 33, and the nozzle 36 is configured to be movable between the upper part of the center of the wafer W and the outside of the liquid receiving cup 33. I have.

In the coating unit 3 A thus configured, the wafer W is carried in by the main transfer means 24 and transferred to the spin chuck 31. When the resist liquid is supplied from the nozzle 36 to the central portion of the wafer W and the spin chuck 31 is rotated at a preset number of revolutions, the resist liquid spreads in the radial direction of the wafer W due to the centrifugal force and the surface of the wafer W A liquid film of a resist solution is formed on the substrate, and the portion that has been shaken off flows down to the liquid receiving cup 33A.

The developing unit 3B is a coating unit 3A.
Developing unit 3B is provided with a supply nozzle having a large number of supply holes arranged in the diameter direction of wafer W, for example, and supplies the developing solution to the central portion of wafer W from this nozzle. At the same time, the developer is deposited on the wafer W by rotating the spin chuck 33 half a turn at a preset number of rotations.

As shown in FIGS. 4 to 6, a film thickness measuring unit 4 provided in the interface section S2 includes a light interference type film thickness meter 5 in a housing 41 forming a measuring chamber having a transfer port 41a on a side surface. And a mounting section 6 for mounting the wafer W
And a drive section 42 for moving the mounting section 6.

The optical interference type film thickness meter 5 is provided with a probe 51, an optical fiber 52, and a spectroscope unit 53 provided so as to face substantially the center of the surface of the wafer W mounted on the mounting portion 6. It has. FIG.
As shown in FIG.
, A spectroscope 55, and a photoelectric element 56,
The surface of the wafer W is irradiated with a light beam of a predetermined wavelength from a light source 54 via an optical fiber 52 and a probe 51, and a spectroscope 55 and a photoelectric element 56 obtain a reflection spectrum of the wafer W based on the reflected light of the light beam. Is used to detect the film thickness.

The mounting portion 6 is formed in a substantially disk shape by, for example, PEEK (polyetheretherketone), and is located at a position facing the probe 51 at a substantially central portion on the mounting surface side of the wafer W, for example. 4 and 5, a concave portion 60 is formed. The concave portion 60 has a stepped portion 60a formed in the middle thereof, and the first concave portion 61a on the lower side and the first concave portion 6 which are larger than the first concave portion 61a.
The second recesses 61b are located above the first recesses 1a. The recesses 60 have, for example, a rectangular plane. The inside of the first concave portion 61a is larger than the irradiation area of the light beam irradiated from the probe 51, for example, 5 m.
A reflector, for example, a silicon piece 62 having a size of about mx 5 mm x 0.7 mm is provided.

In the second recess 61b, a cover 63 made of, for example, PEEK for covering the first recess 61a is provided in a state where the lower surface peripheral portion is supported by the step portion 60a. And, for example, the first recess 61
It is attached to the mounting portion 6 with a screw 663a at a position outside of a. The size of the cover 63 is the first
, And is set so that the upper surface of the cover body 63 is at a position lower than a protrusion to be described later, and is formed to have a size of, for example, about 25 mm × 10 mm × 2 mm.

As shown in FIG. 6, a hole 64 is formed in the cover 63 so as to penetrate the cover 63 in a substantially vertical direction. The hole 64 is irradiated from the probe 51, The size is set to be larger than the passing area of the light beam reflected by the silicon piece 62. Thus, light is directly transmitted and received between the probe 51 and the silicon piece 62 through the hole 62.

A plurality of, for example, three annular protrusions 65 (65a, 65b, 65c) for supporting the back side of the wafer W are provided concentrically outside the second concave portion 61b of the mounting portion 6, for example. It is provided above. In the figure, 66 is a suction path,
One end of the suction path 66 is, for example, the innermost protrusion 65a.
The opening 67 is formed at two positions on the surface of the mounting portion 6 so as to be connected to the protrusion 65 b adjacent to the suction shaft 65. Is connected to the exhaust means 68 via the As a result, the wafer W is supported on the mounting portion 6 while the back surface is supported by the protrusion 65.
Will be sucked in vacuum.

The driving section 42 includes a rotating mechanism 43 and X,
It is configured in combination with a Y drive mechanism 44, and is configured to rotate the mounting unit 6 via a substantially vertical rotation shaft 45 and move in the X and Y directions. In the figure, reference numeral 7 denotes a control unit, which controls the movement of the mounting unit 6 by the driving unit 42,
It has a function of processing a signal obtained from the spectroscope unit 53 to obtain a film thickness at each position of the wafer W, creating a film thickness distribution, and calculating an average value of the film thickness.

Further, in this example, the film thickness measuring unit 4 shares a peripheral exposure apparatus for exposing the peripheral portion of the wafer W exposed by the exposure apparatus 200 in order to remove the peripheral resist. It is configured. That is, an exposure means 46 is provided in the housing 41 and a line sensor 47 for detecting the peripheral portion of the wafer W
Are provided so as to sandwich the passing area vertically.

In such a film thickness measuring unit 4, the surface of the wafer W is irradiated with light by, for example, an optical interference type film thickness meter 5,
The reflectance is detected based on the reflected light, and the control unit 7 controls the movement of the mounting unit 6 in the X and Y directions and around the vertical axis via the driving unit 42 and the spectroscope unit 53.
Is processed to obtain an average value of the film thickness and the like.

Further, the control unit 7 is configured to create and manage a recipe for the film thickness measuring unit 4 and to control the film thickness measuring unit 4 according to the recipe. FIG. 7 shows the configuration of the control unit 7.
It is composed of a PU (Central Processing Unit), a program, a memory, and the like. Each function is divided into blocks and described as constituent elements. , That is, the adjustment of the light amount of the light source 54 by measuring the reflection spectrum of the silicon piece 62, the timing setting of the replacement time of the silicon piece 62, and the like. Therefore, the description will be given with emphasis on this point.

FIG. 770 is a recipe creation section, 71 is a recipe storage section, 72 is a recipe selection section, 73 is a calculation section, 74 is a spectrum selection section, 75 is a memory section, 76 is a comparison section, and 7A
Is a first alarm generator, 7B is a second alarm generator, 7
C is a third alarm generator. The recipe creation unit 70
A recipe combining conditions necessary for film thickness measurement, such as a resist type and first to third allowable values, can be input. The recipe created here is stored in the recipe storage unit 72. Is done. The recipe creation section 70 includes a recipe creation program, an operation screen for inputting and editing a recipe, and the like. A plurality of recipes are prepared according to the type of the resist film, for example, and the operator selects a desired recipe from the plurality of recipes stored in the recipe storage unit 71 by the recipe selection unit 72. B1
Is a bus.

The first allowable value is a so-called error range of the reflection spectrum A of the silicon piece 62 described later. Within this range, the reference spectrum which is the reflection spectrum of the silicon piece 62 at the time of setup and the thickness of the resist film are included. If a difference spectrum H from the reflection spectrum A of the silicon piece 62 at the time of measurement is included, it is treated as a normal state, and then the thickness of the resist film is measured. The second allowable value is the light source 54 if the difference spectrum H falls within the range even if the difference spectrum H deviates from the first allowable value.
After adjusting the amount of light and adjusting the amount of light, the thickness of the resist film is measured. Further, the third allowable value means that when the difference spectrum H deviates from the third allowable value, it is treated as an abnormality of the device or the like, and even when the difference spectrum H deviates from the second allowable value, the difference H falls within this range. If it is included, it is treated as an abnormality such as contamination of the silicon piece 62, and after the silicon piece 62 is replaced, the thickness of the resist film is measured.

The first, second and third allowable values are set in accordance with the type of the resist film, and the present inventors conducted various experiments by changing the type of the resist film. The result is empirically obtained. In other words, the present inventors have made various experiments that when the reflection spectrum A of the silicon piece 62 is different from the reference spectrum, the cause is a change in the amount of light due to the deterioration of the light source 54 and a contamination of the silicon piece 62 itself. It was found that the degree of the difference between the spectra was different depending on these causes. That is, when the spectrum A deviates from the first allowable value which is an error range of the reference spectrum, when the degree of deviation is relatively small, the reflection spectrum A is adjusted by adjusting the light amount of the light source 54.
Is almost the same as the reference spectrum, and when the degree of deviation is large, the reference spectrum A
And the reference values of the second allowable value and the third allowable value are set based on this.

The calculation section 73 is for calculating a difference spectrum between the reference spectrum and another spectrum at the time of setup described later or at the time of actual film thickness measurement, and the like. This is for storing the spectrum, the difference spectrum obtained by the calculation unit 73, and the like. The spectrum selection unit 75 is for selecting a spectrum or a difference spectrum stored in the memory unit, and the comparison unit 76 is configured to compare the difference spectrum selected by the spectrum selection unit 75 with the first, second, and third tolerances. It is for comparing with a value.

The first alarm generation section 7A, the second alarm generation section 7B, and the third alarm generation section 7C require replacement of the silicon piece 62 when the apparatus is in an abnormal state and when the light amount of the light source 54 needs to be adjusted. This is for generating an alarm in a certain case, and performs, for example, sounding a buzzer, turning on an alarm lamp, and displaying an alarm on an operation screen.

Next, the operation of the film thickness measuring unit 4 will be described. First, a measurement recipe for the film thickness measurement unit 4 is created and set up corresponding to the type of the resist film formed by the above-described resist pattern forming apparatus A1. In the setup method, first, when a new recipe is created, first, second, and third allowable values are input in the recipe input unit 70 of the control unit 7 in accordance with the type of the resist film. When using an existing recipe, the recipe selection unit 72 selects a target recipe from the recipe storage unit 71.

Next, a reference spectrum (hereinafter referred to as a reference spectrum) which is a reflection spectrum of the silicon piece 62 of the mounting portion 6 is measured. In other words, a predetermined wavelength, for example, 500 nm to
800 nm, predetermined intensity 80% to 90% (MAX100
%), The reference spectrum of the silicon piece 62 is measured, and this is stored in the memory unit 75.

Next, a bare silicon wafer W1 in a state before a resist film is formed is placed on the placing section 6, and under the same conditions as in the measurement of the reference spectrum, the reflection spectrum of the bare silicon wafer W1 (hereinafter referred to as “reflection spectrum”). (Referred to as a substrate spectrum), and this is stored in the memory unit 75. This ends the setup.

Next, a method of actually measuring the thickness of the resist film by the film thickness measuring unit 4 will be described with reference to the flowchart of FIG. At this time, before the wafer W on which the resist film is formed by the resist pattern forming apparatus A1 is carried into the film thickness measuring unit 4, the reflection spectrum of the silicon piece 62 of the mounting portion 6 is measured under the same conditions as during the setup. Measure and form the first spectrum, the silicon piece 6
Then, a reflection spectrum (hereinafter, referred to as a spectrum A) of No. 2 is obtained (step S1), and the comparison section 76 of the control section 7 compares the spectrum A with the reference spectrum. This comparison is
For example, the calculation unit 73 of the control unit 7 calculates a difference spectrum (hereinafter referred to as a difference spectrum H) between the spectrum A and the reference spectrum, which forms a first difference spectrum (step S2), and calculates the difference spectrum H And the first
Compare with the third allowable value. Here, the difference spectrum is calculated by the following method.

That is, first, the difference spectrum H
Is compared with the third allowable value (step S3). If the difference spectrum deviates from the third allowable value, an alarm is output by the first alarm generating unit 7A as an abnormality of the apparatus (step S4), and the film thickness is determined. End the measurement. On the other hand, if it is within the third allowable value, the process proceeds to the next step S5, where the difference spectrum H is compared with the second allowable value, and if it is out of the second allowable value, the third alarm generating unit 7C (Step S6), the silicon piece 62 embedded in the mounting portion 6 is replaced (step S7), and the reflection spectrum A of the silicon piece is measured again (step S6).
1).

If it is within the second allowable value, step S8
Then, the difference spectrum H is compared with the first allowable value, and if it is out of the first allowable value, an alarm is output by the second alarm unit 7B (step S9), and the spectrometer unit 53 is output.
Is adjusted so that the spectrum A becomes substantially the same as the reference spectrum (step S10), and the film thickness of the wafer W on which the resist film is formed in step S11 is measured. That is, the wafer W on which the resist film is formed is mounted on the mounting unit 6, and a reflection spectrum (hereinafter, referred to as a spectrum B) of the wafer W, which forms a second spectrum, is measured. Then, the calculation unit 73 of the control unit 7 calculates a difference spectrum (hereinafter referred to as a difference spectrum I) between the spectrum B and the substrate spectrum of the bare silicon wafer W1 stored in the memory unit 75, based on the difference spectrum I. The thickness of the resist film is detected. If it is within the first allowable value, the film thickness of the wafer W on which the resist film is formed is measured in step S11, and the measurement program ends.

In this example, in this example, a difference spectrum H between the reflection spectrum A of the silicon piece 62 and the reference spectrum is obtained, and if the difference spectrum H is within the first allowable value, the resist film on the wafer W The film thickness is measured, and the light amount of the light source 54 is adjusted if it is out of the first allowable value and is within the second allowable value, and if it is out of the second allowable value, the silicon piece embedded in the mounting portion 6 is adjusted. 62, the operator may look at the data of the reflection spectrum and calculate the difference spectrum H. Alternatively, the calculation of the difference spectrum H may be performed as in the above-described example. It may be performed automatically.

The comparison between the difference spectrum H and the first, second, and third allowable values may be performed by an operator while looking at the data, or may be performed automatically. Further, the adjustment of the light amount of the light source 54 may be manually performed by the operator, or the measurement of the spectrum A and the measurement of the spectrum A and the reference spectrum may be performed such that the spectrum A and the reference spectrum are substantially the same while adjusting the light amount. The comparison may be repeatedly performed, and the light amount may be automatically adjusted to the optimum value.

In such a film thickness measuring unit 4, detection of deterioration of the light source 54 and contamination of the silicon piece 62, so-called calibration, is performed by measuring the reflection spectrum of the silicon piece 62 incorporated in the mounting section 6. Therefore, it is not necessary to transport the bare silicon wafer to the film thickness measuring unit 4 every time the measurement is performed. Therefore, since the step required for transporting the bare silicon wafer is not required, the number of steps of the film thickness measurement step is reduced, the labor and time required for the film thickness measurement are reduced, and the throughput can be improved. In this case, in this example, a protrusion 65 for holding the wafer W is provided in an annular shape, and the wafer W is vacuum-sucked and held by sucking the back surface of the wafer W from between the protrusions 65 through the suction path 66. Since the above structure is adopted, the silicon piece can be embedded on the surface side of the mounting portion 6 even in the mounting portion 6 for vacuum suction.

The magnitude of the difference spectrum H between the reference spectrum and the spectrum A of the silicon piece 62 at the time of measuring the film thickness corresponds to the cause of the difference spectrum H such as abnormality of the light source 64 and contamination of the silicon piece 62 in advance. Since it is attached, it is easy to eliminate the cause of the difference spectrum H, and calibration can be easily performed.

Further, by providing a cover on the silicon piece 62, contamination of the silicon piece 62 can be prevented, so that the replacement interval of the silicon piece 62 becomes longer. Therefore, it is not necessary to replace the silicon piece 62 for a long time. As a result, the time required for calibration can be reduced,
This leads to an improvement in throughput.

Next, a film thickness measuring unit 8 of another embodiment to which the present invention is applied will be described with reference to FIG. Instead of embedding the silicon piece 62 in the mounting portion 81, the unit 8
In this example, the mounting portion 81 is configured to be rotatable and movable in the X and Y directions by the driving portion 42, and to hold the wafer W substantially horizontally by vacuum suction, and a light interference type film. A thickness gauge 5 and a silicon piece 62 mounted on a substantially horizontal support arm 82 are provided.

The mounting portion 81 is configured to be movable in a substantially horizontal direction between a measurement position and a standby position, and the light interference type film thickness meter 5 is configured in the same manner as in the above-described embodiment. The mounting portion 51 is provided so as to face the mounting portion 81 when the mounting portion 81 is at the measurement position. The support arm 82 is configured to be movable in a substantially horizontal direction between a standby position and a measurement position on the side (the right side in the drawing) of the mounting portion 81 by the moving mechanism 83. Thus, the silicon piece 62 and the mounting portion 81 do not interfere with each other when performing the respective measurements. In the figure, members denoted by the same reference numerals as those in the above-described embodiment have the same configuration as in the above-described embodiment. The silicon piece 62 of this example may also be covered with a cover body 63 in which a hole 64 for transmitting and receiving light is formed, as in the above-described embodiment. Further, a peripheral exposure device may be provided also in the film thickness measuring unit 8 of this example.

In this configuration, the setup and the measurement of the resist film thickness are performed in the same manner as in the above-described embodiment, but at the time of the setup, the support arm 82 is moved from the standby position to the silicon position as shown in FIG. The piece 62 is moved to a measurement position facing the probe 51 to measure the reference spectrum of the silicon piece 62, and then the support arm 82 is moved to the standby position as shown in FIG. A bare silicon wafer W1 on which a resist film is not formed is placed, and the placing section 81 is moved to a measurement position facing the probe 51, and the substrate spectrum of the bare silicon wafer W1 is measured.

In the actual measurement, the silicon piece 62 on the support arm 82 is opposed to the probe 51, the reflection spectrum A of the silicon piece 62 is measured, and when the film thickness of the resist film is actually measured, the mounting is performed. The wafer W on which the resist film is formed is placed on the mounting portion 81, and the mounting portion 81
Is moved to a measurement position facing the probe 51, and the thickness of the resist film is measured.

In this configuration, the same effect as that of the embodiment shown in FIG. 4 can be obtained, and the silicon piece 62 is provided separately from the mounting portion 81. Calibration using the silicon piece 62 can be performed without changing the position, and the existing mounting portion can be used, which is effective.

FIG. 11 shows a film thickness measuring unit 9 of still another embodiment to which the present invention is applied. This unit 9
Is a rotatable and movable in the X and Y directions by a driving unit 42, a mounting unit 91 for holding the wafer W substantially horizontally by vacuum suction, an optical interference type film thickness meter 5, a silicon chip And a cylindrical body 92 for holding 62.
The cylindrical body 92 is provided at the tip side of the probe 51 (the mounting portion 91).
The portion of the cylindrical body 92 that is close to the probe 51 is formed, for example, in the same size as the tip of the probe 51. The transparent reflector, for example, glass 93 is
2 is provided to be fitted. In the figure, members denoted by the same reference numerals as those in the above-described embodiment have the same configuration as in the above-described embodiment. A peripheral exposure device may be provided in the film thickness measuring unit of this example.

In such a configuration, the setup and the measurement of the resist film thickness are performed in the same manner as in the above-described embodiment. At the time of the setup, as shown in FIG. Is placed, and the reflection spectrum (hereinafter referred to as spectrum X) is measured. The spectrum X
Contains the spectra of both the glass 93 and the bare silicon wafer W1. Next, as shown in FIG. 12B, the bare silicon wafer W1 is unloaded from the mounting portion 91,
With no reflector on the lower side of the glass 93, a spectrum of only the glass 93, which is a reference spectrum, is measured. Then, the spectrum of the bare silicon wafer W1 forming the substrate spectrum is calculated from the difference spectrum K between the reference spectrum and the spectrum X (spectrum X-reference spectrum).

At the time of actual measurement, as shown in FIG. 12C, the spectrum Y of the glass 93 is measured with no reflector below the glass 93. Then, a difference spectrum L between the reference spectrum and the spectrum Y, which constitutes a first difference spectrum, is calculated by (spectrum Y-reference spectrum), and this difference spectrum L and the first to Calibration is performed by comparing with an allowable value of 3. In this way, when the difference spectrum L is within the first allowable value, as shown in FIG. 12D, the wafer W on which the resist film is formed The reflection spectrum Z of the wafer W is measured, and the film thickness is detected based on the difference spectrum between the spectrum Z and the substrate spectrum.

With such a structure, the same effects as those of the embodiment shown in FIG.
Since the silicon piece 62 is provided separately from the above, the existing mounting portion can be used.
2 and the cylindrical body 92 is small, so that the entire apparatus can be downsized.

As described above, in the present invention, a so-called set-up operation such as measurement of a reference spectrum of a reflector (transparent reflector), measurement of a substrate spectrum of a bare silicon wafer, and the like is periodically performed every time a predetermined number of wafers W are inspected. Therefore, it is possible to suppress a change in the measurement environment such as a change in the height between the probe 51 and the measurement surface of the wafer W.

In the present invention, as shown in FIG. 13, a reflector (transparent reflector) measured every time the wafer W is inspected.
By obtaining the correlation between the magnitude of the difference spectrum between the spectrum and the reference spectrum and the number of inspections of the wafer W, the life of the light source 54, that is, the light amount adjustment time, and the timing of the replacement of the light source 54 itself are determined from the slope of the correlation curve. And
The timing of replacement of the reflector (transparent reflector) may be predicted. In this case, since the light source and the silicon piece are replaced in advance at a predetermined time, the number of replacements during inspection is reduced. As a result, the inspection time can be shortened, and the inspection throughput can be improved.

Further, in the present invention, the difference spectrum between the reference spectrum and the substrate spectrum is calculated by the calculation unit 73 of the control unit 7 at the time of the setup, and this is stored in the memory unit 75 as the difference spectrum S. Then, a sum spectrum K (spectrum S + spectrum A) of the difference spectrum S and the spectrum A (or spectrum Y) of the reflector is calculated, and a difference spectrum P (sum spectrum K) of the sum spectrum K and the substrate spectrum is calculated. -Substrate spectrum), and calculate the difference spectrum P
You may make it compare with 2nd, 3rd tolerance.

As described above, according to the present invention, the reflection spectrum of the reflector or the transparent reflector provided inside the measurement chamber is measured, and the difference spectrum between the spectrum and these reference spectra is obtained. The feature is that the thickness of the resist film on the wafer W is measured if the value is within the allowable value of 1. Therefore, regardless of the above-described embodiment, the reflector (transparent reflector) is provided inside the measurement chamber. It may be provided at any place, and the configuration may be such that the cover is not provided on the reflector. Adjustment of the light amount of the light source includes replacement of the light source, and replacement of the reflector (transparent reflector) includes replacement of the reflector (transparent reflector).
It is not always necessary to provide a peripheral exposure device.

The types of thin films measured by the film thickness measuring apparatus of the present invention include, in addition to the above-mentioned resist films, antireflection films (TARC, BARC), interlayer insulating films (SOD film,
SOG film), silicon oxide film, silicon nitride film, polysilicon, metal film and the like. Further, a SUS piece, an aluminum piece, a ceramic piece or the like other than a silicon piece can be used as a reflector, and a plastic or the like can be used as a transparent reflector other than glass. Furthermore, the substrate used in the present invention may be an LCD substrate.

[0064]

According to the present invention, in measuring the thickness of a thin film formed on a substrate, the reflection spectrum of a reflector provided in a measurement chamber is measured to adjust the amount of light from a light source and to adjust the thickness of the reflector. Since the replacement is performed, the number of film thickness inspection steps is reduced, and the film thickness inspection work is facilitated.

[Brief description of the drawings]

FIG. 1 is a plan view showing an overall configuration of an embodiment of a resist pattern forming apparatus provided with a film thickness measuring unit according to the present invention.

FIG. 2 is a perspective view showing an overview of the resist pattern forming apparatus.

FIG. 3 is a vertical sectional side view showing a main part of a coating unit provided in the resist pattern forming apparatus.

FIG. 4 is a vertical sectional side view showing the film thickness measuring unit.

FIG. 5 is a plan view and a cross-sectional view showing a mounting portion of the film thickness measuring unit.

FIG. 6 is a cross-sectional view showing a main part of the placing section.

FIG. 7 is a block diagram illustrating a control unit used in the embodiment.

FIG. 8 is a flowchart for measuring a resist film thickness in the above embodiment.

FIG. 9 is a longitudinal sectional side view showing a film thickness measuring unit according to another embodiment of the present invention.

FIG. 10 is a process chart showing the operation of the film thickness measuring unit.

FIG. 11 is a vertical sectional side view showing a film thickness measuring unit according to still another embodiment of the present invention.

FIG. 12 is a process chart showing the operation of the film thickness measuring unit.

FIG. 13 is a characteristic diagram showing a correlation between the number of inspected wafers W inspected by the film thickness measuring unit and the magnitude of a difference spectrum.

FIG. 14 is a characteristic diagram for explaining the principle of an optical interference type film thickness meter.

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 coating / developing device 200 exposing device A1 resist pattern forming device W semiconductor wafer W1 bare silicon wafer 4, 8, 9 film thickness measuring unit 5 optical interference type film thickness meter 51 probe 54 light source 6 receiver 62 reflector 63 cover 64 hole 7 control unit 92 cylindrical body 93 glass

────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] November 15, 2000 (200.11.
15)

[Procedure amendment 1]

[Document name to be amended] Drawing

[Correction target item name] All figures

[Correction method] Change

[Correction contents]

FIG.

FIG. 2

FIG. 3

FIG. 5

FIG. 13

FIG. 4

FIG. 6

FIG. 7

FIG. 8

FIG. 9

FIG. 10

FIG. 11

FIG.

FIG. 14

 ──────────────────────────────────────────────────の Continuing from the front page (72) Inventor Hiroshi Tomita 2655 Tsukurei, Kikuyo-cho, Kikuchi-gun, Kumamoto Prefecture Inside the Kumamoto Office of Electron Kyushu Co., Ltd. (72) Ryoichi Uemura 2655 Tsukurei, Kikuyo-cho, Kikuchi-gun, Kumamoto Tokyo Inside Electron Kyushu Co., Ltd.Kumamoto Office (72) Inventor Masahiro Nakatsuru 2655 Tsukurei, Kikuyo-cho, Kikuchi-gun, Kumamoto Prefecture Tokyo Inside Electron F Co., Ltd. (72) Kunie Ogata 2655 Tsukurei, Kikuyo-cho, Kikuchi-gun, Kumamoto Tokyo Electron Co., Ltd. F term (reference) 2F065 AA30 BB03 CC19 CC31 FF41 FF51 FF61 GG24 LL02 LL67 PP13 QQ13 QQ25 5F046 CD01 CD05 CD06 JA04 JA21 JA22 LA01 LA18

Claims (10)

[Claims]
1. A mounting portion for holding a substrate substantially horizontally with a thin film forming surface facing upward, a spectroscope unit including a light source and a spectroscope, and facing a substrate mounting surface of the mounting portion. A probe connected to the spectrometer unit by an optical fiber, and a driving unit for relatively moving the mounting unit and the probe in a substantially horizontal direction, and forming the thin film on the substrate. In a film thickness measuring device that irradiates a surface with light to obtain a spectrum of reflected light and detects a film thickness based on the spectrum, when a substrate is mounted on the mounting portion, the substrate does not collide with the substrate. A reflector is buried in the substrate mounting surface of the mounting portion so that a part thereof faces the probe, and before the thickness of the thin film formed on the substrate is measured, the reflector and the probe are connected to each other. Irradiate light to the reflector with the Thickness measuring apparatus characterized by measuring the torque.
2. A mounting portion for holding a substrate substantially horizontally with a thin film forming surface facing upward, a spectroscope unit including a light source and a spectroscope, and facing the substrate mounting surface of the mounting portion. A probe connected to the spectrometer unit by an optical fiber, and a driving unit for relatively moving the mounting unit and the probe in a substantially horizontal direction, and forming the thin film on the substrate. In a film thickness measuring device for irradiating a surface with light to obtain a spectrum of reflected light and detecting a film thickness based on the spectrum, a substantially horizontal support member for holding a reflector, the probe and the reflector And a horizontal drive mechanism for relatively moving the probe in a substantially horizontal direction. Before measuring the thickness of the thin film formed on the substrate, the reflector and the probe are opposed to each other so that light is applied to the reflector. And measure the spectrum of the reflected light A film thickness measuring device.
3. A cover body for covering the surface of the reflector, and a hole formed through the cover body at a position corresponding to the reflector of the cover body, wherein a hole of the cover body is provided. The film thickness measuring apparatus according to claim 1, wherein the reflector and the probe are opposed to each other via a portion, and light is transmitted and received between the reflector and the probe.
4. The film thickness measuring device according to claim 1, wherein said reflector is made of silicon.
5. A mounting portion for holding a substrate substantially horizontally with a thin film formation surface facing upward, a spectroscope unit including a light source and a spectroscope, and facing the substrate mounting surface of the mounting portion. A probe connected to the spectrometer unit by an optical fiber, and a driving unit for relatively moving the mounting unit and the probe in a substantially horizontal direction, and forming the thin film on the substrate. In a film thickness measuring device that irradiates light on the surface to obtain a spectrum of reflected light and detects a film thickness based on the spectrum, the probe is fitted around an outer periphery of an end of the probe facing the mounting portion. And a transparent reflector provided on the cylindrical body so as to face an end of the probe facing the mounting portion, wherein the transparent reflector is provided on a substrate. Before measuring the thickness of the formed thin film, the probe A film thickness measuring device which irradiates a projectile with light and measures the spectrum of the reflected light.
6. The film thickness measuring device according to claim 5, wherein said transparent reflector is glass.
7. A mounting portion provided inside the measurement chamber and configured to hold the substrate substantially horizontally, and configured to be movable in a substantially horizontal direction relative to the mounting portion, wherein a light source and a spectroscope are provided. A film thickness measuring device equipped with a spectrometer unit including an optical fiber and a probe connected by an optical fiber irradiates light to the thin film forming surface of the substrate to obtain a reflected light spectrum, and based on the spectrum, Obtaining a reflection spectrum of a reflector provided inside the measurement chamber, using the reflection spectrum as a reference spectrum, and mounting a substrate on which a thin film is not formed on the mounting portion. And obtaining a reflection spectrum of the substrate and using the same as a substrate spectrum. Before measuring the thickness of a thin film formed on the substrate, a reflection spectrum of the reflector is obtained, and this is referred to as a first spectrum. Performing the step Calculating a difference spectrum between the vector and the first spectrum and setting the difference spectrum as a first difference spectrum; and if the first difference spectrum is within a first allowable value, a thin film is formed on the mounting portion. Placing the formed substrate on the substrate and obtaining a reflection spectrum of the substrate, setting the reflection spectrum as a second spectrum; calculating a difference spectrum between the second spectrum and the substrate spectrum; A step of detecting a film thickness.
8. The method according to claim 1, further comprising, if the first difference spectrum is within a second allowable value, adjusting a light amount of the light source so that the first spectrum approaches a reference spectrum. 7. The film thickness measuring method according to 7.
9. The method according to claim 7, further comprising a step of replacing the reflector if the first difference spectrum is within a third allowable value.
10. The method according to claim 7, wherein the thin film is a resist film.
JP2000337765A 2000-11-06 2000-11-06 Film thickness measuring apparatus and method Expired - Fee Related JP3625761B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000337765A JP3625761B2 (en) 2000-11-06 2000-11-06 Film thickness measuring apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000337765A JP3625761B2 (en) 2000-11-06 2000-11-06 Film thickness measuring apparatus and method

Publications (2)

Publication Number Publication Date
JP2002141274A true JP2002141274A (en) 2002-05-17
JP3625761B2 JP3625761B2 (en) 2005-03-02

Family

ID=18813098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000337765A Expired - Fee Related JP3625761B2 (en) 2000-11-06 2000-11-06 Film thickness measuring apparatus and method

Country Status (1)

Country Link
JP (1) JP3625761B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007132743A (en) * 2005-11-09 2007-05-31 Olympus Corp Infrared microscope having calibration function, and calibration method of infrared microscope
JP2009010349A (en) * 2007-05-22 2009-01-15 Asml Netherlands Bv Method of inspecting substrate, and method of preparing substrate for lithography
JP2011066049A (en) * 2009-09-15 2011-03-31 Sokudo Co Ltd Substrate treatment apparatus, substrate treatment system, and inspection/periphery exposure apparatus
JP2012021856A (en) * 2010-07-14 2012-02-02 Keyence Corp Interference thickness meter
JP2012247368A (en) * 2011-05-30 2012-12-13 Tokyo Electron Ltd Substrate inspection device, substrate inspection method and storage medium
KR20130007503U (en) * 2012-06-21 2013-12-31 도쿄엘렉트론가부시키가이샤 Apparatus for examining substrate
CN108981594A (en) * 2018-07-30 2018-12-11 河南师范大学 It is declined based on optical fiber and swings the method for chamber measurement nano-level thin-membrane thickness

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007132743A (en) * 2005-11-09 2007-05-31 Olympus Corp Infrared microscope having calibration function, and calibration method of infrared microscope
JP2009010349A (en) * 2007-05-22 2009-01-15 Asml Netherlands Bv Method of inspecting substrate, and method of preparing substrate for lithography
US8435593B2 (en) 2007-05-22 2013-05-07 Asml Netherlands B.V. Method of inspecting a substrate and method of preparing a substrate for lithography
JP2011066049A (en) * 2009-09-15 2011-03-31 Sokudo Co Ltd Substrate treatment apparatus, substrate treatment system, and inspection/periphery exposure apparatus
US8477301B2 (en) 2009-09-15 2013-07-02 Sokudo Co., Ltd. Substrate processing apparatus, substrate processing system and inspection/periphery exposure apparatus
JP2012021856A (en) * 2010-07-14 2012-02-02 Keyence Corp Interference thickness meter
JP2012247368A (en) * 2011-05-30 2012-12-13 Tokyo Electron Ltd Substrate inspection device, substrate inspection method and storage medium
US9025852B2 (en) 2011-05-30 2015-05-05 Tokyo Electron Limited Substrate inspection apparatus and method for operating the same
KR101849411B1 (en) * 2011-05-30 2018-04-16 도쿄엘렉트론가부시키가이샤 Substrate inspection apparatus, substrate inspection method and storage medium
KR20130007503U (en) * 2012-06-21 2013-12-31 도쿄엘렉트론가부시키가이샤 Apparatus for examining substrate
KR200487281Y1 (en) * 2012-06-21 2018-08-29 도쿄엘렉트론가부시키가이샤 Apparatus for examining substrate
CN108981594A (en) * 2018-07-30 2018-12-11 河南师范大学 It is declined based on optical fiber and swings the method for chamber measurement nano-level thin-membrane thickness

Also Published As

Publication number Publication date
JP3625761B2 (en) 2005-03-02

Similar Documents

Publication Publication Date Title
US9291911B2 (en) Monitoring apparatus and method particularly useful in photolithographically processing substrates
JP5390094B2 (en) Patterned wafer backside rapid thermal processing
TW383414B (en) Photoresist agent processing method and photoresist agent processing system and evaluation method and processing apparatus for photoresist agent film
US5255286A (en) Multi-point pyrometry with real-time surface emissivity compensation
US6293696B1 (en) System and process for calibrating pyrometers in thermal processing chambers
US6313903B1 (en) Resist coating and developing unit
JP4955977B2 (en) Coating and developing apparatus and method thereof
KR100886850B1 (en) Method and apparatus for enhanced embedded substrate inspection through process data collection and substrate imaging techniques
KR101454068B1 (en) Substrate position detection apparatus, film deposition apparatus equipped with the same, and substrate position detection method
JP3916473B2 (en) Substrate processing apparatus and substrate processing method
US6479801B1 (en) Temperature measuring method, temperature control method and processing apparatus
TWI598975B (en) Substrate processing apparatus and substrate processing method
US7042558B1 (en) Eddy-optic sensor for object inspection
US7289661B2 (en) Apparatus and method for inspecting a substrate
US5963315A (en) Method and apparatus for processing a semiconductor wafer on a robotic track having access to in situ wafer backside particle detection
US9240356B2 (en) Surface inspection apparatus, method for inspecting surface, exposure system, and method for producing semiconductor device
US5508934A (en) Multi-point semiconductor wafer fabrication process temperature control system
KR100492158B1 (en) Apparatus for inspecting a wafer
US6768542B2 (en) Defect inspecting device for substrate to be processed and method of manufacturing semiconductor device
US6166801A (en) Monitoring apparatus and method particularly useful in photolithographically processing substrates
US7402207B1 (en) Method and apparatus for controlling the thickness of a selective epitaxial growth layer
US20060286300A1 (en) Cluster tool architecture for processing a substrate
KR100937082B1 (en) Substrate processing apparatus and substrate processing method
JP2013236112A (en) Substrate processing method, substrate processing device, exposure device, measurement inspection apparatus, processor, computer system, program and information recording medium
KR20050022016A (en) Reflection mirror apparatus, exposure apparatus and device manufacturing method

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040624

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040803

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041004

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20041109

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20041130

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101210

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101210

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131210

Year of fee payment: 9

LAPS Cancellation because of no payment of annual fees