JP2020154674A - Information processing device, information processing method, and program - Google Patents

Abstract

To appropriately control a flash memory so as not to reach rewriting life before reaching product life.SOLUTION: An information processing device 101 includes am ambient temperature measurement unit 302 for measuring temperature around a flash memory, a writing life prediction unit 303 for predicting rewriting life on the basis of the measured temperature, a number of rewriting times acquisition unit 304 for acquiring the total value of the number of rewriting times in each block, a number of rewriting blocks acquisition unit 305 for acquiring the number of rewriting blocks of data per time by a writing function unit in each type of data, a rewriting frequency acquisition unit 306 for acquiring a rewriting frequency by the writing function unit in each type of the data, a rewriting life arrival time prediction unit 307 for predicting a rewriting life arrival time on the basis of the number of rewriting times, the number of rewriting blocks, and the rewriting frequency, and a rewriting frequency adjustment unit 308 for adjusting a rewriting frequency in each type of the data in the case that the rewriting life arrival time is shorter than a prescribed product life.SELECTED DRAWING: Figure 4

Description

The present invention relates to an information processing device, an information processing method, and a program.

In recent years, flash memory, which is a type of non-volatile semiconductor memory, has been widely used in electronic devices and the like. In particular, NAND flash memory has been increasing in capacity and is becoming mainstream as a device for data storage (storage). In the NAND flash memory, data is written and read in units of a plurality of bits called pages, and data is erased in units of a plurality of pages called blocks. Since data cannot be overwritten in flash memory, when writing data, it is necessary to erase all the data in block units and then write new data.

The flash memory has a configuration in which data is stored by electric charges injected into a floating gate provided in a memory cell (hereinafter, simply referred to as a cell), and power supply is not required to hold the data. However, since the charge amount of the floating gate changes with time due to discharge or the like, the data retention time of the flash memory is finite. Further, it is known that the flash memory deteriorates due to a charge trap or the like in the gate insulating film when the cell data is rewritten, so that the data holding time becomes shorter as the number of rewrites increases.

A flash memory having such characteristics generally has a shorter data holding time and a smaller number of rewritable times than a magnetic storage device such as a hard disk. The NAND flash memory is said to be more disadvantageous than the magnetic storage device in terms of data retention characteristics and rewrite characteristics, while it is easy to increase the capacity and speed. Furthermore, NAND flash memory is an MLC (Multi-Level) that stores 2 bits or more of data per cell by controlling the amount of charge accumulated by the floating gate of one cell in order to increase the capacity in recent years. Cell) technology is adopted. While this MLC technique is advantageous for increasing the capacity, it lowers the data retention characteristic and the rewrite characteristic, and shortens the service life.

A technique called wear leveling is generally known for the purpose of extending the service life of such a NAND flash memory. Wear leveling is, for example, recording the number of times data is rewritten for each block, and when writing data, the number of times of rewriting varies for each block by giving priority to the block with the least number of rewrites. It is a leveling technology.

Further, a technique for performing a refresh process is known in order to extend the service life of the flash memory (see, for example, Patent Documents 1 and 2). For example, Patent Document 1 proposes to predict the data holding time according to the number of times the flash memory is rewritten, read the data held before the elapse of the data holding time, and write the data again.

Further, a technique for extending the service life (product life) of a product incorporating a flash memory is known (see, for example, Patent Document 3). In Patent Document 3, when a flash memory is mounted on a consumable item such as a cartridge used in an image forming apparatus, the flash memory is consumed based on the usage amount of the consumable item and the access frequency (rewrite frequency) to the flash memory. It has been proposed to control the access frequency so that the rewrite life of the flash memory is maintained until the product life of the product is exhausted.

The flash memory as described above is incorporated in a server device or the like constituting an information processing system, and various data obtained by transmission / reception with another device may be written. For example, when a flash memory is built in a server device that monitors the status of a plurality of image forming devices connected to a network, the flash memory contains different types of data depending on the function of writing data. Written.

In such an information processing system, the amount of data written to the flash memory and the frequency of rewriting differ greatly depending on the type of data. For example, the counter information used for billing according to the usage amount of the image forming apparatus has a small amount of data, but is highly important and frequently rewritten because the latest information is always required. On the other hand, the amount of data related to maintenance and reports of image forming devices is relatively large because the information is diverse, but the frequency of rewriting is low because the latest information is not always required.

However, the techniques described in Patent Documents 1 to 3 cannot cope with a situation in which the amount of data and the frequency of rewriting at the time of writing to the flash memory at one time differ greatly depending on the writing function. If more data than expected is written, the rewrite life of the flash memory may be reached before the product life is reached, and the flash memory may become unusable.

The disclosed technology has been made to solve this in view of the above circumstances, and aims to appropriately control the flash memory so that the rewrite life is not reached before the product life is reached.

The disclosed technology is an information processing device incorporating a flash memory in which data is rewritten in block units, a writing function unit for writing data to the flash memory, and a peripheral area for measuring the temperature around the flash memory. The temperature measurement unit, the rewrite life prediction unit that predicts the rewrite life of the flash memory based on the temperature measured by the ambient temperature measurement unit, and the rewrite number of times to acquire the total value of the rewrite count of the flash memory for each block. The acquisition unit, the number of rewrite blocks acquisition unit that acquires the number of data rewrite blocks per time by the write function unit for each data type, and the data rewrite frequency by the write function unit for each data type. The rewrite frequency acquisition unit to be acquired, the rewrite life arrival time prediction unit that predicts the rewrite life arrival time, which is the time to reach the rewrite life, based on the rewrite number, the rewrite block number, and the rewrite frequency, and the above-mentioned An information processing device having a rewrite frequency adjusting unit that adjusts the rewrite frequency for each type of data when the rewrite life arrival time is shorter than a predetermined product life.

According to the present invention, the flash memory can be appropriately controlled so that the rewrite life is not reached before the product life is reached.

It is a figure which illustrates the whole structure of the device management system which concerns on one Embodiment of this invention. It is a figure which illustrates the hardware configuration of the device management apparatus. It is a figure which illustrates the hardware configuration of a device. It is a block diagram which illustrates the functional structure of a device management device and a device. It is a figure which shows an example of the relationship between the data retention time, the temperature, and the number of times of rewriting. It is a figure explaining the method of predicting the rewrite life arrival time, and the method of adjusting a rewrite frequency. It is a figure which shows an example of a writing function (type of data). It is a flowchart explaining a series of operation about data rewriting. It is a block diagram which illustrates the functional structure of the CPU which concerns on 1st modification. It is a block diagram which illustrates the functional structure of the CPU which concerns on the 2nd modification. It is a block diagram which illustrates the functional structure of the CPU which concerns on 3rd modification. It is a block diagram which illustrates the functional structure of the CPU which concerns on 4th modification. It is a block diagram which illustrates the functional structure of the CPU which concerns on 8th modification. It is a figure which illustrates the hardware configuration of the device management apparatus which concerns on 9th modification. It is a block diagram which illustrates the functional structure of the CPU which concerns on 9th modification.

Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The present invention is not limited to the following embodiments.

[overall structure]
FIG. 1 is a diagram illustrating the overall configuration of the information processing system 1 according to the embodiment of the present invention. As shown in FIG. 1, the information processing system 1 includes a device management device 10 as an information processing device, a plurality of devices 20, and a remote management server device 30.

The device management device 10 is connected to a plurality of devices 20 via the network 50. Further, the device management device 10 is connected to the remote management server device 30 via the network 60. The network 50 is, for example, a network such as an in-house LAN (Local Area Network) used in a corporate office or the like. The network 60 is, for example, an external network such as the Internet.

The device management device 10 is installed, for example, in the office of a user who uses the device 20. The device management device 10 is equipped with management software (application program) for controlling and managing the device 20.

The device management device 10 communicates with each device 20 and collects operation information and counter information from each device 20. The device management device 10 transmits the operation information and counter information collected from each device 20 to the remote management server device 30.

The device 20 is an image forming apparatus, for example, a multi-function peripheral (MFP). A multifunction device is a device having at least two functions of a printing function, a copying function, a scanner function, and a facsimile function. The device 20 is not limited to the image forming device, and may be a network device, an electronic device, a PC, or the like. Further, as the plurality of devices 20, different types of devices may be mixed.

When the device 20 is an image forming apparatus, the above-mentioned operation information includes a remaining value of consumables such as paper and toner, a count value of the number of printed sheets, error information, and the like.

The plurality of devices 20 communicate with the device management device 10 via the network 50 for each device 20.

The remote management server device 30 communicates with the device management device 10 via the network 60. The remote management server device 30 is a device that remotely manages each device 20 based on the operation information acquired via the device management device 10. The remote management server device 30 aggregates operation information and counter information of each device 20, orders consumables, creates report information, and provides update firmware to each device 20.

[Hardware configuration of device management device 10]
Next, the hardware configuration of the device management device 10 will be described. FIG. 2 is a diagram illustrating a hardware configuration of the device management device 10.

As shown in FIG. 2, the device management device 10 includes a CPU (Central Processing Unit) 101, a RAM (Random Access Memory) 102, a ROM (Read Only Memory) 103, a flash memory 104, a temperature sensor 105, and a device I / F 106. It has communication I / F 107, which are connected to each other via bus 110. Further, a display unit 108 and an operation unit 109 are connected to the device I / F 106.

The CPU 101 comprehensively controls the operation of the entire device management device 10. The RAM 102 is used as a work area when the CPU 101 processes information. The ROM 103 stores a startup program, various control programs, application programs, and the like.

Various data such as various management information used for managing the device 20, status information of the device 20, operation information, counter information, setting change information, operation log, update firmware, and report information are written in the flash memory 104. Instead of the ROM 103, a program such as a startup program may be stored in the flash memory 104.

The temperature sensor 105 is a sensor for measuring the operating environment temperature of the flash memory 104.

The flash memory 104 is a NAND type flash memory. The flash memory 104 is composed of a page composed of a plurality of bit units and a block composed of a plurality of page units. The flash memory 104 has a plurality of blocks. Data is written and read to the flash memory 104 in page units, and data is erased in block units. Since the flash memory 104 cannot overwrite the data, when writing the data, it is necessary to erase the data in block units and then write the data to the page in the erased block. That is, the flash memory 104 rewrites data in block units.

Further, the flash memory 104 has a wear leveling function unit 104a, and when the built-in controller rewrites data according to an instruction from the outside, the flash memory 104 writes in priority to a block having a small number of rewrites, thereby blocking the data. Level the variation in the number of rewrites for each.

In the present embodiment, the function of the CPU 101 controls the writing, reading, and erasing of data to the flash memory 104.

The device I / F 106 is an interface for connecting the display unit 108 and the operation unit 109 to the bus 110. The display unit 108 is a visual user interface for displaying various types of information, and is composed of, for example, an LCD (Liquid Crystal Display) or the like. The operation unit 109 is a user interface for a user to input various information to the device management device 10, such as a keyboard and a mouse. The communication I / F 107 is an interface for connecting the device management device 10 to the networks 50 and 60.

The software control unit is configured by the CPU 101 performing calculations according to the program stored in the ROM 103 and the program loaded in the RAM 102. A functional block is composed of a combination of the software control unit and hardware.

The program used by the device management device 10 may be a file in an installable format or an executable format, recorded on a computer-readable recording medium such as a recording medium, and distributed.

[Hardware configuration of equipment]
Next, the hardware configuration of the device 20 will be described. FIG. 3 is a diagram illustrating a hardware configuration of the device 20.

As shown in FIG. 3, the device 20 includes a CPU 201, a ROM 202, a RAM 203, an external storage device 204, an engine unit 205, an operation display unit 206, and a communication I / F 207. Each of these parts is communicably connected by the system bus 208.

The CPU 201 reads a program stored in the ROM 202 or the like into the RAM 203 and executes it to control the operation of the device 20 in an integrated manner. The ROM 202 stores the program used by the device 20. The RAM 203 is used as a work area for calculation of the CPU 201.

The external storage device 204 is a storage device such as an HDD or SSD (Solid State Drive) that stores various data such as image data and print data.

The engine unit 205 is a hardware device that realizes a scanner function, a printer function, and the like. Further, the engine unit 205 has a sensor for detecting the remaining amount of consumables such as paper and toner, a counter for counting the number of printed sheets, a sensor for detecting various errors, and the like. These sensors and counters are used to acquire the above-mentioned operation information.

The operation display unit 206 is, for example, a touch panel or the like, and is a device that receives input of an instruction to the device 20 and displays information such as the state of the device 20. The operation display unit 206 may be separated into an operation unit and a display unit.

The communication I / F 207 is an interface for connecting to the network 50 and communicating data.

[Functional configuration]
Next, the functional configuration configured in the CPU 101 of the device management device 10 will be described. FIG. 4 is a block diagram illustrating the functional configuration of the CPU 101, and shows only the characteristic parts related to the present embodiment.

In FIG. 4, the CPU 101 includes a communication unit 300, a write function unit 301, an ambient temperature measurement unit 302, a rewrite life prediction unit 303, a rewrite count acquisition unit 304, a rewrite block number acquisition unit 305, and a rewrite frequency. The acquisition unit 306, the rewrite life arrival time prediction unit 307, and the rewrite frequency adjustment unit 308 are configured.

The communication unit 300 communicates with the device 20 and the remote management server device 30 to send and receive various data. The writing function unit 301 is a function unit that writes various data to the flash memory 104 according to the data writing function. The writing function unit 301 erases one or more blocks according to the amount of data to be written, and then writes (rewrites) data to one or more pages included in the erased one or more blocks.

The ambient temperature measuring unit 302 measures the ambient temperature of the flash memory 104 based on the detected value of the temperature sensor 105.

The rewrite life prediction unit 303 predicts the rewrite life of the flash memory 104 based on the temperature measured by the ambient temperature measurement unit 302. Since the data retention time of the flash memory 104 has a characteristic that it becomes shorter as the temperature rises, the rewrite life predicted by the rewrite life prediction unit 303 becomes lower as the temperature rises. Further, the rewrite life prediction unit 303 acquires a value obtained by multiplying the rewrite life of one block by the number of blocks possessed by the flash memory 104 as the rewrite life.

FIG. 5 is a diagram showing an example of the relationship between the data holding time, the temperature, and the number of rewrites of the flash memory 104. FIG. 5 shows an example in which an SLC (Single-Level Cell) NAND flash memory is used as the flash memory 104. The solid line in FIG. 5 shows the temperature dependence of the data retention time after rewriting the block 10 times. The alternate long and short dash line shows the temperature dependence of the data retention time after rewriting the block 10K times. The alternate long and short dash line shows the temperature dependence of the data retention time after rewriting the block 100 K times.

As shown in FIG. 5, in the flash memory 104, the data holding time becomes shorter as the ambient temperature becomes higher. In addition, the data retention time becomes shorter as the number of rewrites increases. For example, when the ambient temperature Ta is 55 ° C., the data retention time becomes about one year after rewriting 100K times. For example, when the product life is set to 5 years, the minimum guaranteed time Rmin of the data retention time needs to be set to 5 years. In the example of FIG. 5, in order to set the ambient temperature Ta at 55 ° C. and the minimum guaranteed time Rmin to 5 years, it is necessary to suppress the rewrite life to about 10 K or less.

The rewrite life prediction unit 303 holds reference data showing the relationship between the data retention time, the temperature, and the number of rewrites as shown in FIG. 5, and the minimum guaranteed time is based on the temperature measured by the ambient temperature measurement unit 302. The rewrite life that satisfies Rmin (for example, 5 years) is obtained.

Returning to FIG. 4, the rewrite count acquisition unit 304 acquires the rewrite count of each block of the flash memory 104. Here, the number of times of rewriting is the number of times that the data is rewritten by the writing function unit 301 from the start of using the flash memory 104. Further, the rewrite count acquisition unit 304 counts the rewrite count of each block, and acquires the total value of the count values as the rewrite count.

The rewrite block number acquisition unit 305 acquires the number of blocks (the number of rewrite blocks) at one time when the write function unit 301 rewrites the data for each write function (that is, for each type of data).

The rewrite frequency acquisition unit 306 acquires the frequency (rewrite frequency) at which the write function unit 301 rewrites data for each write function (that is, for each type of data).

The rewrite life arrival time prediction unit 307 includes the number of rewrites (total value) acquired by the rewrite count acquisition unit 304, the number of rewrite blocks for each write function acquired by the rewrite block number acquisition unit 305, and the rewrite frequency acquisition unit 306. Based on the rewrite frequency for each write function acquired by the above, the time to reach the rewrite life predicted by the rewrite life prediction unit 303 (rewrite life arrival time) is predicted.

For example, the rewrite life arrival time prediction unit 307 first obtains the difference between the number of rewrites and the rewrite life (the remaining number of rewritable times). Further, the rewrite life arrival time prediction unit 307 obtains the number of rewrites per unit time for each write function based on the number of rewrite blocks for each write function and the rewrite frequency for each write function. Then, the rewrite life arrival time prediction unit 307 obtains the rewrite life arrival time based on the remaining rewritable number of times and the number of rewrites rewritten per unit time.

The rewrite frequency adjusting unit 308 compares the product life set as the usage life of the device management device 10 with the rewrite life arrival time predicted by the rewrite life arrival time prediction unit 307, and the rewrite life arrival time is calculated from the product life. When it is short, the rewriting frequency by the write function unit 301 is adjusted for each write function (that is, for each type of data) to extend the rewrite life arrival time from the product life. For example, the rewrite frequency adjusting unit 308 extends the rewrite life arrival time of the flash memory 104 as a whole longer than the product life by reducing the rewrite frequency of the less important write function.

FIG. 6 is a diagram illustrating a method of predicting the time to reach the rewrite life and a method of adjusting the rewrite frequency. In FIG. 6, C0 indicates the total value of the number of rewrites acquired by the rewrite number acquisition unit 304 at a certain point in time t0. Further, Cmax indicates the rewrite life predicted by the rewrite life prediction unit 303 at the time point t0.

t1 shows an example of the rewrite life arrival time predicted by the rewrite life arrival time prediction unit 307. When the rewrite life arrival time is shorter than the product life in this way, the rewrite frequency adjusting unit 308 extends the rewrite life arrival time from the product life by lowering the rewrite frequency of some of the writing functions. t2 indicates the time to reach the rewrite life after adjusting the rewrite frequency.

FIG. 7 is a diagram showing an example of a writing function (type of data). As shown in FIG. 7, as the types of data written to the flash memory 104, device status information, abnormality occurrence information, counter information, report information, setting change information, device operation information, operation log, update firmware, etc. are listed. Be done. For example, the device status information is information indicating a toner end, a toner near end, and other supply status. The abnormality occurrence information is information indicating the type of abnormality, the time of occurrence, and the like.

Information such as importance, data amount, rewrite frequency, and priority is associated with each write function (data type). The importance, amount of data, and frequency of rewriting vary depending on the type of data. The amount of data written by the writing function unit 301 to the flash memory 104 varies depending on the number of devices 20 managed by the device management device 10.

For example, the counter information used for billing according to the usage amount of the device 20 has a small amount of data, but is of high importance because the latest information is always required, and the frequency of rewriting is high. Further, the abnormality occurrence information is also important for reducing the downtime of the device 20, but the amount of data is small because the data format is a numerical value or a flag. On the other hand, the amount of data related to maintenance, reports, operation logs, update firmware, etc. of the device 20 is relatively large because the information is diverse, but the importance is low because the latest information is not always required.

Therefore, if the rewriting frequency of highly important data is adjusted, the device 20 may not be able to normally execute the operation. Therefore, the rewriting frequency adjusting unit 308 mainly adjusts the rewriting frequency of the important data.

The priority is a value determined based on the importance and the amount of data. Basically, the higher the priority, the higher the priority. In FIG. 7, when the importance is the same, the priority of the smaller data amount is set higher. This is because if the amount of data is small, the number of rewrite-symmetrical blocks does not increase rapidly even if the rewriting frequency is relatively high, and the influence is small.

The rewrite frequency adjusting unit 308 may control to extend the rewrite life arrival time by lowering the rewrite frequency of the low-priority charging function based on the priority.

[motion]
Next, a series of operations related to data rewriting of the flash memory 104 will be described. FIG. 8 is a flowchart illustrating a series of operations related to data rewriting.

As shown in FIG. 8, first, in step S10, the ambient temperature measuring unit 302 measures the temperature around the flash memory 104. In step S11, the rewrite life prediction unit 303 predicts the rewrite life of the flash memory 104 based on the temperature measurement value by the ambient temperature measurement unit 302. This rewrite life is the total value of the number of rewritable times of each block. The rewrite life decreases as the measured temperature value increases.

In step S12, the rewrite count acquisition unit 304 acquires the rewrite count of the flash memory 104 up to the present. This rewrite count is the total value of the rewrite count of each block. In step S13, the rewrite block number acquisition unit 305 acquires the number of rewrite blocks at one time when rewriting data for each write function (data type). In step S14, the rewrite frequency acquisition unit 306 acquires the data rewrite frequency for each writing function (data type).

In step S15, the rewrite life arrival time prediction unit 307 predicts the time to reach the rewrite life (rewrite life arrival time) based on the number of rewrites, the number of rewrite blocks, and the rewrite frequency. In step S16, the rewrite frequency adjusting unit 308 compares the rewrite life arrival time with the product life, and determines whether or not the rewrite life arrival time is less than the product life. If it is less than the product life, the rewrite frequency adjustment unit 308 adjusts the rewrite frequency in step S17. The rewrite frequency adjusting unit 308 makes the rewrite life arrival time longer than the product life by reducing the rewrite frequency of data of low importance or priority.

As described above, according to the present embodiment, it is possible to appropriately control the rewriting of the flash memory so that the rewriting life of the flash memory is not reached before the product life of the product incorporating the flash memory is reached. .. This makes it possible to prevent the product life from being affected by the rewrite life of the flash memory.

Various modifications of the above embodiment will be described below.

[First modification]
In the above embodiment, as shown in FIG. 7, the importance and priority of the data are set to constant values, but the importance and priority may be set to values that change according to the state of the device 20 and the like.

FIG. 9 is a block diagram illustrating the functional configuration of the CPU 101 according to the first modification. This modification is different from the functional configuration of the above embodiment in that the abnormality detection unit 320 is added to the functional configuration of the CPU 101. The abnormality detection unit 320 detects an abnormality in the device 20 based on the device status information and the abnormality occurrence information acquired from the device 20.

The rewriting frequency adjusting unit 308 increases the above-mentioned importance and priority according to the content of the abnormality (for example, the degree of abnormality) detected by the abnormality detecting unit 320. For example, the rewrite frequency adjusting unit 308 increases the importance and priority of the corresponding writing function (data) when an abnormality is detected by the abnormality detecting unit 320, and sets the importance and priority when the abnormality is resolved. Undo.

As a result, even when the rewriting frequency is adjusted, data can be reliably recorded when a specific very important abnormality occurs.

[Second modification]
FIG. 10 is a block diagram illustrating a functional configuration of the CPU 101 according to the second modification. This modification is different from the functional configuration of the above embodiment in that the remaining life determination unit 330 and the warning unit 331 are added to the functional configuration of the CPU 101.

The remaining life determination unit 330 has a rewrite count of a certain percentage (for example, 90%) or more of the rewrite life based on the rewrite life predicted by the rewrite life prediction unit 303 and the rewrite count acquired by the rewrite count acquisition unit 304. (That is, whether or not the remaining life is less than a certain value) is determined.

The warning unit 331 transmits a warning to the remote management server device 30 via the communication unit 300 when the remaining life determination unit 330 determines that the number of rewrites is equal to or greater than a certain percentage of the rewrite life. The warning unit 331 may notify the display unit 108 or the like of the device management device 10 of the warning.

In this way, by notifying the warning in advance when the number of rewrites of the flash memory is close to the rewrite life, the user can take measures such as backing up data in advance, and the flash memory suddenly becomes unrewritable. Data loss can be prevented.

[Third variant]
FIG. 11 is a block diagram illustrating a functional configuration of the CPU 101 according to the third modification. This modification is different from the functional configuration of the above embodiment in that the remaining life determination unit 330 and the transfer unit 332 are added to the functional configuration of the CPU 101. The remaining life determination unit 330 has the same configuration as the remaining life determination unit 330 in the second modification.

When the transfer unit 332 determines that the number of rewrites is equal to or greater than a certain percentage of the rewrite life (the remaining life is less than a certain value) by the remaining life determination unit 330, the write function unit 301 writes data to the flash memory 104. Is stopped, and data is transferred to an external sequential server or the like via the communication unit 300. The sequential server is a server device that periodically (every day, every week, every month, etc.) acquires data from the device management device 10.

In this way, when the number of rewrites of the flash memory is close to the rewrite life, the data is transferred to the outside without being stored in the flash memory, thereby preventing data loss due to the flash memory suddenly becoming unrewritable. it can.

[Fourth variant]
FIG. 12 is a block diagram illustrating a functional configuration of the CPU 101 according to the fourth modification. This modification is different from the functional configuration of the above embodiment in that a memory addition detection unit 340 and a remaining life comparison unit 341 are added to the functional configuration of the CPU 101. In this modification, a new flash memory (optional flash memory) 104b can be added to the device management device 10 in addition to the flash memory 104.

The memory addition detection unit 340 detects that a new flash memory 104b has been added (mounted) to the device management device 10. The remaining life comparison unit 341 determines the remaining life of the flash memory 104 (renewal life arrival time) and the remaining life of the new flash memory 104b when the addition of the new flash memory 104b is detected by the memory addition detection unit 340. Is compared, and the writing function unit 301 is made to execute writing to the flash memory having the longer remaining life.

In this way, when the optional flash memory is installed, the rewrite life of the flash memory 104 can be further extended by selectively writing to the one having the longer remaining life.

[Fifth variant]
In the fifth modification, the function of the rewrite frequency adjusting unit 308 is different from that of the above embodiment. In this modification, in order to reduce the rewriting frequency of the flash memory 104, the rewriting frequency adjusting unit 308 temporarily stores the flash memory 104 in the writing function unit 301 instead of the flash memory 104 for a certain period of time (for example, one day). Data is written to the RAM 102 as a device. Then, after a certain period of time elapses, the rewrite frequency adjusting unit 308 causes the writing function unit 301 to read data from the RAM 102 and write the data to the flash memory 104.

By writing data to the flash memory 104 at regular intervals in this way, it is possible to reduce the frequency of rewriting the flash memory 104 while acquiring the latest data from the device 20 or the like.

[6th variant]
In the sixth modification, the function of the writing function unit 301 is different from that of the above embodiment. In this modification, when writing data to the flash memory 104, the writing function unit 301 refers to the data already written to the flash memory 104, and writes the data only when there is a change.

In this way, the rewriting frequency of the flash memory 104 can be reduced by writing only when there is a change in the data.

[7th variant]
In the seventh modification, the function of the rewrite frequency adjusting unit 308 is different from that of the above embodiment. In this modification, in order to reduce the rewriting frequency of the flash memory 104, the rewriting frequency adjusting unit 308 sends the data having a high rewriting frequency to the writing function unit 301 for a certain period of time (for example, one day) in the flash memory. Instead of 104, the RAM 102 as a temporary storage device is made to write. Then, after a certain period of time elapses, the rewrite frequency adjusting unit 308 causes the writing function unit 301 to read data from the RAM 102 and write the data to the flash memory 104.

The rewrite frequency adjusting unit 308 does not write the data having a low rewrite frequency to the RAM 102, but writes the data to the flash memory 104.

In this way, the rewriting frequency of the flash memory 104 can be reduced by temporarily writing the data having a high rewriting frequency to the RAM 102.

[8th modification]
FIG. 13 is a block diagram illustrating a functional configuration of the CPU 101 according to the eighth modification. This modification is different from the functional configuration of the above embodiment in that the temperature determination unit 350 and the warning unit 351 are added to the functional configuration of the CPU 101.

The temperature determination unit 350 determines whether or not the temperature measured by the ambient temperature measurement unit 302 is equal to or higher than a predetermined temperature. This predetermined temperature is, for example, a temperature at which the rewrite life predicted by the rewrite life prediction unit 303 is insufficient with respect to the product life.

When the temperature determination unit 350 determines that the ambient temperature is equal to or higher than a predetermined temperature, the warning unit 351 transmits a warning to the remote management server device 30 via the communication unit 300. The warning unit 351 may notify the display unit 108 or the like of the device management device 10 of the warning.

In this way, by issuing a warning when the ambient temperature of the flash memory exceeds a predetermined temperature, the user can improve the usage environment and extend the rewrite life.

[9th modification]
FIG. 14 is a diagram illustrating a hardware configuration of the device management device 10 according to the ninth modification. This modification is different from the hardware configuration of the above embodiment in that a cooling device 112 for lowering the ambient temperature of the flash memory 104 is added.

FIG. 15 is a block diagram illustrating a functional configuration of the CPU 101 according to the ninth modification. This modification is different from the functional configuration of the above embodiment in that a temperature determination unit 350 and a cooling device control unit 352 are added to the functional configuration of the CPU 101. The temperature determination unit 350 has the same configuration as the temperature determination unit 350 in the eighth modification.

The cooling device control unit 352 controls the cooling device 112 to lower the temperature of the flash memory 104 when the temperature determination unit 350 determines that the ambient temperature is equal to or higher than a predetermined temperature.

In this way, the rewrite life can be extended by lowering the temperature of the flash memory when the ambient temperature of the flash memory becomes equal to or higher than a predetermined temperature.

The above-mentioned plurality of modifications can be combined as long as there is no contradiction.

Each function of the embodiment described above can be realized by one or more processing circuits. Here, the "processing circuit" in the present specification is a processor programmed to execute each function by software such as a processor implemented by an electronic circuit, or a processor designed to execute each function described above. It shall include devices such as ASIC (Application Specific Integrated Circuit), DSP (digital signal processor), FPGA (field programmable gate array) and conventional circuit modules.

Further, the present invention is not limited to the requirements shown in the above embodiments. With respect to these points, the gist of the present invention can be changed without impairing the gist of the present invention, and can be appropriately determined according to the application form thereof.

1 Information processing system 10 Device management device 20 Device 30 Remote management server device 101 CPU
102 RAM (temporary storage device)
104 Flash memory 104a Wear leveling function unit 104b Flash memory 105 Temperature sensor 112 Cooling device 300 Communication unit 301 Function unit 302 Peripheral temperature measurement unit 303 Life expectancy prediction unit 304 Number acquisition unit 305 Block number acquisition unit 306 Frequency acquisition unit 307 Life arrival time prediction 308 Frequency adjustment unit 320 Abnormality detection unit 330 Remaining life judgment unit 331 Warning unit 332 Transfer unit 340 Memory addition detection unit 341 Remaining life comparison unit 350 Temperature judgment unit 351 Warning unit 352 Cooling device control unit

Japanese Unexamined Patent Publication No. 2009-3843 JP-A-2010-67098 JP-A-2009-53681

Claims (13)

An information processing device with a built-in flash memory that rewrites data in block units.
A write function unit that writes data to the flash memory,
An ambient temperature measuring unit that measures the ambient temperature of the flash memory,
A rewrite life prediction unit that predicts the rewrite life of the flash memory based on the temperature measured by the ambient temperature measurement unit, and a rewrite life prediction unit.
A rewrite count acquisition unit that acquires the total value of each block of the rewrite count of the flash memory, and
A rewrite block number acquisition unit that acquires the number of data rewrite blocks per data rewrite block by the write function unit for each data type,
A rewrite frequency acquisition unit that acquires the data rewrite frequency by the write function unit for each type of data,
A rewrite life arrival time prediction unit that predicts the rewrite life arrival time, which is the time to reach the rewrite life, based on the number of rewrites, the number of rewrite blocks, and the rewrite frequency.
When the rewriting life arrival time is shorter than the predetermined product life, the rewriting frequency adjusting unit that adjusts the rewriting frequency for each type of data,
Information processing device with. The information processing device according to claim 1, wherein the rewriting frequency adjusting unit sets a priority for each type of data and reduces the rewriting frequency of the low priority data. The data written by the writing function unit to the flash memory includes data transmitted from the managed device.
It has an abnormality detection unit that detects anomalies based on the data transmitted from the device.
The information processing device according to claim 2, wherein the rewriting frequency adjusting unit raises the priority of the corresponding data when an abnormality is detected by the abnormality detecting unit, and restores the priority when the abnormality is resolved. .. A remaining life determination unit that determines whether or not the number of rewrites is equal to or greater than a certain percentage of the rewrite life.
A warning unit that gives a warning when the remaining life determination unit determines that the number of rewrites is equal to or greater than a certain percentage of the rewrite life.
The information processing apparatus according to any one of claims 1 to 3. A remaining life determination unit that determines whether or not the number of rewrites is equal to or greater than a certain percentage of the rewrite life.
When the remaining life determination unit determines that the number of rewrites is equal to or greater than a certain percentage of the rewrite life, the transfer unit that stops the writing of data by the write function unit and transfers the data to the outside.
The information processing apparatus according to any one of claims 1 to 3. A memory addition detection unit that detects that a new flash memory different from the flash memory has been added,
When the addition of a new flash memory is detected by the memory addition detection unit, the remaining life of the flash memory is compared with the remaining life of the new flash memory, and the writing function unit has a long remaining life. The information processing apparatus according to any one of claims 1 to 5, which causes one to execute writing. Has a temporary storage device
Any one of claims 1 to 6, wherein the rewriting frequency adjusting unit causes the writing function unit to write data to the temporary storage device instead of the flash memory when the rewriting frequency is reduced. The information processing device described in the section. The information according to any one of claims 1 to 7, wherein the writing function unit refers to the data already written to the flash memory when writing the data to the flash memory, and writes the data only when there is a change. Processing equipment. Has a temporary storage device
When the rewriting frequency is reduced, the rewriting frequency adjusting unit causes the writing function unit to store the data with high rewriting frequency acquired by the rewriting frequency acquisition unit in place of the flash memory. The information processing apparatus according to any one of claims 1 to 6, wherein the data is written to the data. A temperature determination unit that determines whether or not the temperature measured by the ambient temperature measurement unit is equal to or higher than a predetermined temperature.
A warning unit that gives a warning when the temperature determination unit determines that the temperature is equal to or higher than a predetermined temperature.
The information processing apparatus according to any one of claims 1 to 9. A cooling device for lowering the ambient temperature of the flash memory,
A temperature determination unit that determines whether or not the temperature measured by the ambient temperature measurement unit is equal to or higher than a predetermined temperature.
A cooling device control unit that controls the cooling device to lower the temperature of the flash memory when the temperature determination unit determines that the temperature is equal to or higher than a predetermined temperature.
The information processing apparatus according to any one of claims 1 to 9. An ambient temperature measurement step that measures the ambient temperature of the flash memory where data is rewritten in block units,
A rewrite life prediction step that predicts the rewrite life of the flash memory based on the temperature measured by the ambient temperature measurement step, and a rewrite life prediction step.
A rewrite count acquisition step for acquiring the total value of each block of the rewrite count of the flash memory, and
A step to acquire the number of rewrite blocks for each type of data to acquire the number of rewrite blocks of data at one time by the write function, and
The rewrite frequency acquisition step to acquire the data rewrite frequency by the write function for each data type,
A rewrite life arrival time prediction step that predicts the rewrite life arrival time, which is the time to reach the rewrite life, based on the number of rewrites, the number of rewrite blocks, and the rewrite frequency.
When the rewrite life arrival time is shorter than the predetermined product life, the rewrite frequency adjustment step for adjusting the rewrite frequency for each data type and the rewrite frequency adjustment step
Information processing method having. An ambient temperature measurement step that measures the ambient temperature of the flash memory where data is rewritten in block units,
A rewrite life prediction step that predicts the rewrite life of the flash memory based on the temperature measured by the ambient temperature measurement step, and a rewrite life prediction step.
A rewrite count acquisition step for acquiring the total value of each block of the rewrite count of the flash memory, and
A step to acquire the number of rewrite blocks for each type of data to acquire the number of rewrite blocks of data at one time by the write function, and
The rewrite frequency acquisition step to acquire the data rewrite frequency by the write function for each data type,
A rewrite life arrival time prediction step that predicts the rewrite life arrival time, which is the time to reach the rewrite life, based on the number of rewrites, the number of rewrite blocks, and the rewrite frequency.
When the rewrite life arrival time is shorter than the predetermined product life, the rewrite frequency adjustment step for adjusting the rewrite frequency for each data type and the rewrite frequency adjustment step
A program that causes a computer to run.

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