JP2020149846A - Error processing device, charged particle beam device, error processing method and program - Google Patents

Abstract

To provide an error processing device for processing information relating to an error included in azimuth information of a crystal, in a charged particle beam device such as an SEM.SOLUTION: An information processing device 10 is provided that is for use in a charged particle beam device 100 in which a charged particle beam is made incident on a surface of a specimen placed on a placement surface of a specimen stage, and that processes information relating to an error of azimuth information of crystal obtained by the charged particle beam device 100. The information processing device 10 comprises: an azimuth error acquisition section 1 acquiring information relating to the error of the azimuth information of crystal on a surface of a reference specimen acquired on the basis of the azimuth of a reference specimen which is placed on the placement surface and of which the azimuth of crystal with respect to the placement surface is known, and on the basis of the azimuth information of crystal on the surface of the reference specimen measured by the charged particle beam device 100; and an azimuth error processing section 2 which processes the information relating to the error.SELECTED DRAWING: Figure 1

Description

The present invention relates to an error processing device, a charged particle beam device including the error processing device, an error processing method and a program.

A scanning electron microscope (SEM) converges accelerated electron beams into electron beam bundles and irradiates them while periodically scanning the surface of the sample, and reflected electrons generated from a local region of the irradiated sample. It is an apparatus for observing the surface morphology of a material, crystal grains, and rearrangements in the vicinity of the surface by detecting secondary electrons and / or secondary electrons and converting those electric signals into a material structure image.

The electron beam drawn from the electron source in a vacuum is immediately accelerated from a low acceleration voltage of 1 kV or less to a high acceleration voltage of about 30 kV with different energies depending on the observation purpose. Then, the accelerated electron beam is focused to a nano-level microdiameter by a magnetic field coil such as a capacitor lens and an objective lens to form an electron beam bundle, and at the same time, the electron beam is deflected by a deflection coil to converge electrons on the sample surface. The line bundle is scanned. Recently, a type in which an electric field coil is also combined is used when focusing an electron beam.

In the conventional SEM, due to the limitation of resolution, the main function was to observe the surface morphology of the sample by the secondary electron image and to examine the composition information by the backscattered electron image. However, in recent years, it has become possible to focus accelerated electron beams to a very small diameter of several nm while maintaining high brightness, so that extremely high-resolution backscattered electron images and secondary electron images can be obtained. It has become.

Conventionally, the mainstream for observing lattice defects is to use a transmission electron microscope (TEM). However, even in the high-resolution SEM as described above, by using the electron channeling contrast imaging (ECCI) method utilizing the reflected electron image, the sample is a very surface of the crystal material (depth from the surface is about 100 nm). It has become possible to observe information on internal lattice defects (hereinafter, also referred to as "internal defects") (see Non-Patent Documents 1 and 2).

Japanese Unexamined Patent Publication No. 2006-194743 Japanese Unexamined Patent Publication No. 2016-139513 JP-A-2018-022592

JEOL News Vol. 43, (2011) p. 7-12 Microscope Vol. 48, No. 3 (2013) p. 216-220

By the way, when a crystalline material is observed by the SEM-ECCI method, the brightness of the observed image changes greatly depending on the difference in crystal orientation. Then, in a specific crystal orientation, the observed image becomes the darkest. Such a condition is called an electronic channeling condition (hereinafter, also simply referred to as a "channeling condition"). The above channeling conditions are satisfied by adjusting the incident direction of the electron beam with respect to the sample.

When the angle formed by the incident electron beam and the predetermined crystal plane changes in the SEM, the reflected electron intensity changes. Then, when the angle formed by the incident electron beam and the predetermined crystal plane satisfies a specific condition, the incident electron beam penetrates deep into the crystal and is difficult to be reflected, so that the reflected electron intensity is minimized. This condition is the channeling condition.

Further, even under the same conditions, in a portion where the crystal plane is locally disturbed due to lattice defects such as dislocations or stacking defects, the reflected electron intensity is increased by reflecting some electron beams. As a result, the contrast between the background and the lattice defects is emphasized, and the internal defects can be identified and observed.

In order to observe the contrast caused by such a lattice defect, it is necessary to grasp the orientation information (hereinafter, also simply referred to as “crystal orientation information”) indicating the rotation of the crystal coordinate system with respect to the sample coordinate system. The SEM is often additionally equipped with an Electron Back Scatter Diffraction (EBSD) device for analyzing the crystal orientation, which makes it possible to acquire an EBSD pattern.

In order to obtain a lattice defect image having a strong contrast with respect to the background, the sample is tilted so as to satisfy the channeling conditions in consideration of the crystal orientation analyzed from the EBSD pattern obtained by EBSD, and the backscattered electrons are reflected. It is effective to observe the image.

Here, in order to obtain the EBSD pattern, it is necessary to incline the sample to about 70 ° in the SEM. As a geometrical arrangement of the reflected electron detector for obtaining a reflected electron image by SEM, there are a forward scattering arrangement arranged directly under the EBSD detector and a back scattering arrangement arranged directly under the electron gun. In the forward scattering arrangement, a reflected electron image can be obtained in a state where the sample is greatly tilted to about 70 ° in the SEM, but a high resolution image cannot be obtained because the aberration of the incident electron beam is large.

On the other hand, in the backscattering arrangement, a high-resolution image reflecting an internal defect can be obtained, but there is a problem that the reflected electron image cannot be acquired and the EBSD pattern cannot be acquired by EBSD at the same time. Further, when the backscattered electron image and the EBSD pattern are acquired alternately, it is necessary to greatly incline the sample each time.

At this time, due to problems such as the tilt accuracy of the sample table or the calibration of the EBSD detector, the positional relationship between the sample surface and the EBSD detector deviates from the appropriate position, and the acquired crystal orientation information on the sample surface is incorrect. May occur. In particular, the contrast due to lattice defects changes sensitively to slight changes in tilt angle. Therefore, the error of the orientation information of the crystal becomes a big problem.

Generally, in order to correct the above error, a method of measuring a sample whose crystal orientation information is known and adjusting the tilt angle of the sample table based on the result is used (for example, Patent Document 1). See.).

However, at the time of measurement by EBSD, the sample table is already tilted by about 70 °, and it may be difficult to tilt the sample table further. Therefore, there is a limit to the correction of the error by adjusting the tilt angle of the sample table. Also, it is not easy to change the position or angle of the EBSD detector.

On the other hand, if it is possible to grasp the information regarding the error of the crystal orientation information, for example, based on the obtained error without adjusting the tilt angle of the sample table or the position or angle of the EBSD detector. It becomes easy to correct the orientation information of the crystal by calculation.

The present invention is an error processing device for processing information related to an error in crystal orientation information in a charged particle beam device such as SEM, TEM, and a scanning ion microscope (SIM), and a charged particle provided with the error processing device. It is an object of the present invention to provide a line device, an error handling method and a program.

The present invention has been made to solve the above problems.

The error processing apparatus according to the embodiment of the present invention is
It is used in a charged particle beam device that injects a charged particle beam onto the surface of a sample placed on a mounting surface of a sample table, and processes information regarding an error in crystal orientation information obtained by the charged particle beam device. It ’s a device,
The orientation of the reference sample placed on the above-mentioned mounting surface and the orientation of the crystal with respect to the above-mentioned mounting surface is known, and the orientation information of the crystal on the surface of the reference sample measured by the charged particle beam device. An orientation error acquisition unit that acquires information regarding an error in the orientation information of the crystal on the surface of the reference sample, which is obtained based on the above.
It is characterized by including an azimuth error processing unit that processes information related to the error.

Further, the error processing method according to the embodiment of the present invention is
It is used in a charged particle beam device that injects a charged particle beam onto the surface of a sample placed on a mounting surface of a sample table, and processes information regarding an error in crystal orientation information obtained by the charged particle beam device. The way,
(A) The orientation of the reference sample placed on the above-mentioned mounting surface and the orientation of the crystal with respect to the above-mentioned mounting surface is known, and the orientation of the crystal on the surface of the reference sample measured by the charged particle beam device. A step of acquiring information on an error in the orientation information of the crystal on the surface of the reference sample, which is obtained based on the information, and
(B) It is characterized by comprising a step of processing the information regarding the error.

Further, the program according to the embodiment of the present invention is
Information on the error of the crystal orientation information obtained by the charged particle beam device, which is used for a charged particle beam device that injects a charged particle beam onto the surface of a sample placed on the mounting surface of the sample table. Is a program that processes
On the computer
(A) The orientation of the reference sample placed on the above-mentioned mounting surface and the orientation of the crystal with respect to the above-mentioned mounting surface is known, and the orientation of the crystal on the surface of the reference sample measured by the charged particle beam device. A step of acquiring information on an error in the orientation information of the crystal on the surface of the reference sample, which is obtained based on the information, and
(B) The step of processing the information regarding the error is executed.

According to the present invention, it is possible to process information regarding an error in the orientation information of a crystal measured by EBSD of a charged particle beam device such as SEM, TEM, SIM. As a result, for example, the orientation information of the crystal can be corrected by calculation based on the information regarding the obtained error without adjusting the tilt angle of the sample table or the position or angle of the EBSD detector.

It is a figure which shows the schematic structure of the error processing apparatus which concerns on one Embodiment of this invention. It is a block diagram which shows concretely the structure of the error processing apparatus in other embodiment of this invention. It is a figure which shows an example of the crystal orientation map. It is a conceptual diagram for explaining the correspondence between the Kikuchi map and the schematic diagram of the real grid. It is a figure which showed an example of SEM schematically. It is a figure which showed an example of TEM schematically. It is a flow figure which shows the operation of the error processing apparatus which concerns on one Embodiment of this invention. It is a block diagram which shows an example of the computer which realizes the error processing apparatus in embodiment of this invention.

An error processing device, a charged particle beam device, an error processing method, and a program according to an embodiment of the present invention will be described with reference to FIGS. 1 to 8.

[Configuration of error processing device]
FIG. 1 is a diagram showing a schematic configuration of a charged particle beam device including an error processing device according to an embodiment of the present invention. The error processing device 10 according to the embodiment of the present invention is used in the charged particle beam device 100 for incidenting the charged particle beam on the surface of the sample placed on the mounting surface of the sample table, and the charged particle beam device 100 It is a device that processes information about the error of the crystal orientation information obtained by.

The charged particle beam includes an electron beam, a focused ion beam (FIB), a charged atomic cluster such as an argon cluster, a positron beam, and the like. Further, the charged particle beam apparatus 100 includes SEM, TEM, SIM and the like. Further, the sample table may be a sample table attached to the general-purpose charged particle beam device 100, or may be a sample table provided with the mechanism disclosed in Patent Document 2 or Patent Document 3.

The error processing device 10 may be directly incorporated in the charged particle beam device 100, or may be mounted in a general-purpose computer or the like connected to the charged particle beam device 100. Further, the error processing device 10 may be mounted on a general-purpose computer or the like that is not connected to the charged particle beam device 100.

Further, as shown in FIG. 1, the error processing device 10 according to the embodiment of the present invention includes an azimuth error acquisition unit 1 and an azimuth error processing unit 2.

The orientation error acquisition unit 1 acquires information on the error of the orientation information of the crystal. The information regarding the error of the crystal orientation information is the orientation of the reference sample which is placed on the mounting surface and the orientation of the crystal with respect to the mounting surface is known, and the surface of the reference sample measured by the charged particle beam apparatus 100. It was obtained based on the orientation information of the crystal in.

The type of reference sample is not particularly limited as long as the orientation of the crystal with respect to the mounting surface is known, but it is preferable to use a cubic single crystal material. Further, it is preferable that the angle formed by the direction perpendicular to the mounting surface and any of the <100> direction, the <110> direction, or the <111> direction of the cubic crystal is 1 ° or less. For example, it is preferable to use a Si single crystal sample whose (001) plane is parallel to the mounting surface (hereinafter, also referred to as “Si (001) single crystal sample”).

The orientation information of the crystal on the surface of the reference sample is point-analyzed or mapped by the charged particle beam apparatus 100 equipped with the error processing apparatus 10 by using the EBSD method, the transmission EBSD method, the electron channeling pattern (ECP), or the like. It can be obtained by performing analysis or the like.

The crystal orientation information is orientation information representing the rotation of the crystal coordinate system with respect to the sample coordinate system. Here, the sample coordinate system is a coordinate system fixed to the sample, and the crystal coordinate system is a coordinate system fixed to the crystal lattice. Further, the crystal orientation information includes numerical data including orientation information representing the rotation of the crystal coordinate system with respect to the sample coordinate system.

The above numerical data includes, for example, data obtained by converting the crystal orientation into a rotation vector such as a Rodriguez vector, and rotations represented by Euler angles based on a virtual Cartesian coordinate system on the sample surface. Data converted into a matrix is included. Further, the conversion to the numerical data may be performed by the azimuth error acquisition unit 1 or by an external device. In the present invention, "numerical data" means data represented by a set of numerical values.

There is no particular limitation on the method of obtaining the information on the error of the crystal orientation information from the orientation of the reference sample and the orientation information of the crystal measured on the surface of the reference sample, and it may be obtained by an external device. The azimuth error acquisition unit 1 may obtain it.

FIG. 2 is a configuration diagram specifically showing a configuration of an error processing device according to another embodiment of the present invention. When the azimuth error acquisition unit 1 obtains information on the error, as shown in FIG. 2, the azimuth error acquisition unit 1 has the azimuth information acquisition unit 1a and the azimuth error calculation unit 1b, and the azimuth information acquisition unit 1a is charged. The orientation information of the crystal on the surface of the reference sample measured by the particle beam apparatus 100 is acquired, and the orientation error calculation unit 1b acquires the orientation of the reference sample with respect to the mounting surface and the orientation information of the crystal acquired by the orientation information acquisition unit 1a. Based on the above, information on the error can be calculated.

Information on the error includes, for example, a unit vector representing the direction of the [001] crystal zone axis of the Si (001) single crystal sample with respect to the incident direction of the charged particle beam, or a rotation matrix representing the unit vector by Euler angles. Etc. are included.

As the orientation information of the crystal on the surface of the reference sample, the value obtained by one measurement may be used, but from the viewpoint of improving the accuracy, the numerical data (rotation vector, rotation matrix) obtained by the multiple measurements is used. Etc.), it is preferable to use the average value.

Further, the orientation error processing unit 2 processes information regarding an error of the orientation information of the crystal on the surface of the reference sample acquired by the orientation error acquisition unit 1.

There are no particular restrictions on how to process the information about the error. For example, as shown in FIG. 2, the azimuth error processing unit 2 has the azimuth error output unit 2a, and the azimuth error output unit 2a can output information on the error so as to be displayed on an external display device. .. This enables the operator to grasp the information regarding the error of the crystal orientation information.

Further, as shown in FIG. 2, the azimuth error processing unit 2 has the azimuth error determination unit 2b, and the azimuth error determination unit 2b measures the surface of the sample by the charged particle beam device based on the information regarding the error. It is possible to determine whether or not to correct the orientation information of the crystal in. As a result, the operator can determine the necessity of correction based on the determination result.

The error processing device 10 according to another embodiment of the present invention may further include a correction unit 3. The correction unit 3 corrects the orientation information of the crystal on the surface of the sample measured by the charged particle beam device based on the information regarding the error. There is no particular limitation on the correction method. For example, when the orientation information of the crystal is a rotation matrix represented by Euler angles or the like, the error obtained as the rotation matrix after performing the rotation operation by the above rotation matrix. It is possible to correct the orientation information of the crystal by multiplying the information about the above and rotating it around a predetermined axis.

The error processing device 10 according to another embodiment of the present invention may further include a correction direction information output unit 4. The correction azimuth information output unit 4 outputs the azimuth information of the crystal on the surface of the sample after being corrected by the correction unit 3 so as to be displayed on an external display device. This allows the operator to grasp more accurate crystal orientation information.

The displayed crystal orientation information may be the above-mentioned numerical data, or may be a crystal orientation map generated by analyzing the numerical data. FIG. 3 is a diagram showing an example of a crystal orientation diagram. The crystal orientation diagram is a diagram showing the incident direction of the charged particle beam with respect to the crystal coordinate system of the crystal to be measured.

Examples of the crystal orientation map include an indexed Kikuchi map (also referred to simply as "Kikuchi map" in the following description), a stereographic projection of the crystal plane, a schematic diagram of a real lattice, and a calculated electron diffraction pattern. .. 3a and 3b are diagrams showing an example of a Kikuchi map, and FIGS. 3c and 3d are diagrams showing an example of a schematic diagram of a real lattice. Further, FIG. 4 is a conceptual diagram for explaining the correspondence between the Kikuchi map and the schematic diagram of the real grid.

In the state shown in FIGS. 3a, 3c, and 4a, the direction of the [001] crystal zone axis of the crystal and the incident direction of the charged particle beam CB are parallel. The incident direction of the charged particle beam CB in FIGS. 3a and 3b is indicated by a cross mark in the center of the figure, and the incident direction of the charged particle beam CB in FIGS. 3c and 3d is the direction perpendicular to the paper surface. On the other hand, as schematically shown in FIG. 4b, when the crystal rotates with respect to the incident direction of the charged particle beam CB, the Kikuchi map and the schematic diagram of the real lattice change to the states shown in FIGS. 3b and 3d.

[Configuration of charged particle beam device]
The charged particle beam device 100 according to the embodiment of the present invention includes an error processing device 10 and a main body 20. The configuration of the charged particle beam device including the error processing device according to the embodiment of the present invention will be described in more detail.

A case where SEM200 is used as the charged particle beam device 100 will be described as an example. FIG. 5 is a diagram schematically showing an example of SEM200. As shown in FIG. 5, the SEM 200 includes an error processing device 10, a display device 30, an input device 40, and a main body 210. The main body 210 includes an electron beam incident device 220, an electron beam control device 230, a sample table 240, a sample table driving device 250, a detection device 260, and a FIB incident device 270.

The electron beam incident device 220 draws an electron beam from an electron source and emits it while accelerating, an electron gun 221 and a condenser lens 222 that focuses the accelerated electron beam bundle, and the focused electron beam bundle in a minute region on a sample. It is mainly composed of an objective lens 223 to be converged, a pole piece 224 including the objective lens 223, and a deflection coil 225 for scanning an electron beam bundle on a sample.

The electron beam control device 230 includes an electron gun control device 231, a focusing lens system control device 232, an objective lens system control device 233, and a deflection coil control device 235. The electron gun control device 231 is a device that controls the accelerating voltage of the electron beam emitted by the electron gun 221 and the focusing lens system control device 232 is a device that controls the opening angle of the electron beam bundle focused by the condenser lens 222. It is a device that controls.

The sample table 240 is for supporting the sample, and the tilt angle and the position on the virtual three-dimensional coordinates can be freely changed by the sample table driving device 250. The detection device 260 also includes a secondary electron detector 261, a backscattered electron detector 262, and an electron backscatter diffraction (EBSD) detector 263.

The FIB incident device 270 is a device for incident FIB on a sample. Since a known device may be used, detailed illustration and description of the structure will be omitted. As shown in FIG. 5, in the configuration in which the FIB incident device 270 is provided inside the SEM 200, the charged particle beam includes an electron beam incident from the electron beam incident device 220 and a FIB incident from the FIB incident device 270. .. Generally, the incident direction of the FIB is inclined by 52 °, 54 ° or 90 ° with respect to the incident direction of the electron beam. The SEM 200 does not have to include the FIB incident device 270.

In the above configuration, the secondary electron detector 261 and the backscattered electron detector 262 obtain a charged particle beam image, and the electron backscatter diffraction detector 263 obtains the orientation information of the crystal. In particular, the backscattered electron detector 262 can measure information about the backscattered electron intensity.

Next, a case where the charged particle beam device 100 is a TEM 300 will be described as an example. FIG. 6 is a diagram schematically showing an example of TEM300. As shown in FIG. 6, the main body 310 of the TEM 300 includes an electron beam incident device 320, an electron beam control device 330, a sample holder 340, a sample holder drive device 350, a detection device 360, and a detection system control device 370.

The electron beam incident device 320 is mainly composed of an electron gun 321 that draws an electron beam from an electron source and emits it while accelerating, and a first condenser lens 322 and a second condenser lens 323 that focus the accelerated electron beam bundle. To.

The electron beam control device 330 includes an electron gun control device 331, a first condenser lens system control device 332, and a second condenser lens system control device 333. The electron gun control device 331 is a device that controls the accelerating voltage of the electron beam emitted by the electron gun 321. Further, the first condenser lens system control device 332 and the second condenser lens system control device 333 are devices for controlling the opening angle of the electron beam bundle focused by the first condenser lens 322 and the second condenser lens 323, respectively.

The sample holder 340 is for supporting the sample, and the tilt angle and the position on the virtual three-dimensional coordinates can be freely changed by the sample holder driving device 350. Further, the detection device 360 includes an objective lens 361, an intermediate lens 362, a projection lens 363, and a detector 364. Then, the transmitted image and the electron diffraction pattern magnified by the objective lens 361, the intermediate lens 362, and the projection lens 363 are projected on the detector 364.

The detection system control device 370 includes an objective lens control device 371, an intermediate lens control device 372, and a projection lens control device 373, each of which changes the magnetic strength of the objective lens 361, the intermediate lens 362, and the projection lens 363. , The information entering the detector 364 can be switched to a transmission image or an electronic diffraction pattern.

In the above configuration, the detector 364 obtains a charged particle beam image and crystal orientation information.

[Device operation]
Next, the operation of the error processing device according to the embodiment of the present invention will be described with reference to FIG. 7. FIG. 7 is a flow chart showing the operation of the error processing device according to the embodiment of the present invention. In the embodiments shown below, a case where SEM is used will be described as an example.

First, as a premise, a point analysis using the EBSD method is performed a plurality of times on a Si (001) single crystal sample placed on the mounting surface of the sample table. Subsequently, a mapping analysis using the EBSD method is performed on a predetermined region of the sample surface placed on the mounting surface. When the EBSD method is used, it is necessary to perform the analysis in a state where the sample is tilted by about 70 ° from the original state. After the analysis, the tilt angle of the sample is returned to the original state.

Then, the azimuth information acquisition unit 1a acquires the azimuth information of a plurality of crystals in the Si (001) single crystal sample detected by the electron backscatter diffraction detector 263, and each of them is a virtual Cartesian coordinate system on the sample surface. Is converted to Euler angles based on (step A1). Subsequently, the orientation information acquisition unit 1a averages the crystal coordinate system 001 axes close to the Z direction of the sample coordinate system from the orientation information of the plurality of crystals converted to the Euler angle, considering the symmetry of the cubic crystal. A unit vector representing the direction of the crystal coordinate system 001 with respect to the sample coordinate system is calculated (step A2).

Next, the orientation error calculation unit 1b calculates the deviation between the above unit vector and the incident direction of the charged particle beam as Euler angles, and uses it as information regarding the error of the orientation information of the crystal (step A3).

After that, the azimuth error output unit 2a outputs the numerical data of the information related to the error calculated as Euler angles so as to be displayed on the external display device (step A4), and the azimuth error determination unit 2b outputs the information related to the error. Based on this, it is determined whether or not to correct the orientation information of the crystal (step A5). In this embodiment, it is assumed that the orientation information of the crystal should be corrected.

Subsequently, the correction unit 3 corrects the orientation information of the crystal on the sample surface detected by the electron backscatter diffraction detector 263 based on the information regarding the error obtained in step A3 (step A6). Specifically, the correction is performed by multiplying the crystal orientation information obtained as the Euler angles for each pixel obtained by the mapping analysis with the information on the error obtained as the Euler angles and performing the rotation operation. Do.

Then, the correction orientation information output unit 4 generates a crystal orientation map at a position selected by the operator on the crystal surface from the orientation information of the crystal on the surface of the sample after being corrected in step A6, and an external display device. Output so that it is displayed in (step A7).

This makes it possible to correct the orientation information of the crystal based on the information regarding the obtained error without adjusting the tilt angle of the sample table or the position or angle of the EBSD detector.

The program according to the embodiment of the present invention may be any program that causes a computer to execute steps A1 to A7 shown in FIG. By installing this program on a computer and executing it, the error processing device 10 according to the present embodiment can be realized. In this case, the computer processor includes the azimuth error acquisition unit 1 (azimuth information acquisition unit 1a, azimuth error calculation unit 1b), azimuth error processing unit 2 (azimuth error output unit 2a, azimuth error determination unit 2b), correction unit 3, and It functions as a correction direction information output unit 4 and performs processing.

Further, the program in the present embodiment may be executed by a computer system constructed by a plurality of computers. In this case, for example, each computer has an azimuth error acquisition unit 1 (azimuth information acquisition unit 1a, azimuth error calculation unit 1b), an azimuth error processing unit 2 (azimuth error output unit 2a, azimuth error determination unit 2b), respectively. It may function as either the correction unit 3 or the correction direction information output unit 4.

Here, a computer that realizes the error processing device 10 by executing the program according to the above embodiment will be described with reference to FIG. FIG. 8 is a block diagram showing an example of a computer that realizes the error processing device 10 according to the embodiment of the present invention.

As shown in FIG. 8, the computer 500 includes a CPU (Central Processing Unit) 511, a main memory 512, a storage device 513, an input interface 514, a display controller 515, a data reader / writer 516, and a communication interface 517. And. Each of these parts is connected to each other via a bus 521 so that data can be communicated with each other. The computer 500 may include a GPU (Graphics Processing Unit) or an FPGA (Field-Programmable Gate Array) in addition to the CPU 511 or in place of the CPU 511.

The CPU 511 expands the program (code) of the present embodiment stored in the storage device 513 into the main memory 512, and executes these in a predetermined order to perform various operations. The main memory 512 is typically a volatile storage device such as a DRAM (Dynamic Random Access Memory). Further, the program according to the present embodiment is provided in a state of being stored in a computer-readable recording medium 520. The program in the present embodiment may be distributed on the Internet connected via the communication interface 517.

Further, specific examples of the storage device 513 include a semiconductor storage device such as a flash memory in addition to the hard disk drive. The input interface 514 mediates data transmission between the CPU 511 and input devices 518 such as a keyboard and mouse. The display controller 515 is connected to the display device 519 and controls the display on the display device 519.

The data reader / writer 516 mediates the data transmission between the CPU 511 and the recording medium 520, reads the program from the recording medium 520, and writes the processing result in the computer 500 to the recording medium 520. The communication interface 517 mediates data transmission between the CPU 511 and another computer.

Specific examples of the recording medium 520 include a general-purpose semiconductor storage device such as CF (Compact Flash (registered trademark)) and SD (Secure Digital), a magnetic recording medium such as a flexible disk, or a CD-. Examples include optical recording media such as ROM (Compact Disk Read Only Memory).

The error processing device 10 in the present embodiment can also be realized by using the hardware corresponding to each part instead of the computer in which the program is installed. Further, the error processing device 10 may be partially realized by a program and the remaining part may be realized by hardware. Further, the error processing device 10 may be configured by using a cloud server.

According to the present invention, it is possible to process information regarding an error in the orientation information of a crystal measured by EBSD of a charged particle beam device such as SEM, TEM, SIM. As a result, for example, the orientation information of the crystal can be corrected by calculation based on the information regarding the obtained error without adjusting the tilt angle of the sample table or the position or angle of the EBSD detector.

1. 1. Azimuth error acquisition unit 1a. Azimuth information acquisition unit 1b. Azimuth error calculation unit 2. Azimuth error processing unit 2a. Azimuth error output unit 2b. Azimuth error determination unit 3. Correction unit 4. Corrected azimuth information output unit 10. Error processing device 20. Main body 30. Display device 40. Input device 100. Charged particle beam device 200. SEM
300. TEM
500. Computer CB. Charged particle beam

Claims (19)

It is used in a charged particle beam device that injects a charged particle beam onto the surface of a sample placed on a mounting surface of a sample table, and processes information regarding an error in crystal orientation information obtained by the charged particle beam device. It ’s a device,
The orientation of the reference sample placed on the above-mentioned mounting surface and the orientation of the crystal with respect to the above-mentioned mounting surface is known, and the orientation information of the crystal on the surface of the reference sample measured by the charged particle beam device. An orientation error acquisition unit that acquires information regarding an error in the orientation information of the crystal on the surface of the reference sample, which is obtained based on the above.
A azimuth error processing unit for processing information related to the error is provided.
Error processing device. The azimuth error processing unit has an azimuth error output unit.
The azimuth error output unit outputs information about the error acquired by the azimuth error acquisition unit so as to be displayed on an external display device.
The error processing apparatus according to claim 1. The azimuth error processing unit has an azimuth error determination unit.
The orientation error determination unit determines whether or not to correct the orientation information of the crystal on the surface of the sample measured by the charged particle beam device based on the information regarding the error acquired by the orientation error acquisition unit. To do,
The error processing apparatus according to claim 1 or 2. The azimuth error acquisition unit has an azimuth information acquisition unit and an azimuth error calculation unit.
The orientation information acquisition unit acquires orientation information of the crystal on the surface of the reference sample measured by the charged particle beam apparatus.
The azimuth error calculation unit calculates information on the error based on the azimuth of the reference sample and the azimuth information acquired by the azimuth information acquisition unit.
The error processing apparatus according to any one of claims 1 to 3. A correction unit that corrects the orientation information of the crystal on the surface of the sample measured by the charged particle beam device based on the information regarding the error acquired by the orientation error acquisition unit is further provided.
The error processing apparatus according to any one of claims 1 to 4. Further provided is a correction orientation information output unit that outputs the orientation information of the crystal on the surface of the sample after being corrected by the correction unit so as to be displayed on an external display device.
The error processing apparatus according to claim 5. The error processing apparatus according to any one of claims 1 to 6 is provided.
Charged particle beam device. It is used in a charged particle beam device that injects a charged particle beam onto the surface of a sample placed on a mounting surface of a sample table, and processes information regarding an error in crystal orientation information obtained by the charged particle beam device. It's a method
(A) The orientation of the reference sample placed on the above-mentioned mounting surface and the orientation of the crystal with respect to the above-mentioned mounting surface is known, and the orientation of the crystal on the surface of the reference sample measured by the charged particle beam device. A step of acquiring information on an error in the orientation information of the crystal on the surface of the reference sample, which is obtained based on the information, and
(B) A step of processing information regarding the error.
Error handling method. In the step (b), the information regarding the error acquired in the step (a) is output so as to be displayed on an external display device.
The error processing method according to claim 8. Whether or not to correct the orientation information of the crystal on the surface of the sample measured by the charged particle beam device based on the information regarding the error acquired in the step (a) in the step (b). To judge,
The error processing method according to claim 8 or 9. In the step (a), the orientation information of the crystal on the surface of the reference sample measured by the charged particle beam device is acquired, and the orientation of the reference sample and the orientation information acquisition unit have acquired the orientation information. Calculate the information related to the error based on the orientation information.
The error processing method according to any one of claims 8 to 10. (C) Further comprising a step of correcting the orientation information of the crystal on the surface of the sample measured by the charged particle beam device based on the information regarding the error acquired in the step (a).
The error processing method according to any one of claims 8 to 11. (D) Further comprising a step of outputting the orientation information of the crystal on the surface of the sample after being corrected in the step (c) so as to be displayed on an external display device.
The error processing method according to claim 12. Information on the error of the crystal orientation information obtained by the charged particle beam device, which is used for a charged particle beam device that injects a charged particle beam onto the surface of a sample placed on the mounting surface of the sample table. Is a program that processes
On the computer
(A) The orientation of the reference sample placed on the above-mentioned mounting surface and the orientation of the crystal with respect to the above-mentioned mounting surface is known, and the orientation of the crystal on the surface of the reference sample measured by the charged particle beam device. A step of acquiring information on an error in the orientation information of the crystal on the surface of the reference sample, which is obtained based on the information, and
(B) To execute the step of processing the information regarding the error.
program. In the step (b), the information regarding the error acquired in the step (a) is output so as to be displayed on an external display device.
The program according to claim 14. Whether or not to correct the orientation information of the crystal on the surface of the sample measured by the charged particle beam device based on the information regarding the error acquired in the step (a) in the step (b). To judge,
The program according to claim 14 or 15. In the step (a), the orientation information of the crystal on the surface of the reference sample measured by the charged particle beam device is acquired, and the orientation of the reference sample and the orientation information acquisition unit have acquired the orientation information. Calculate the information related to the error based on the orientation information.
The program according to any one of claims 14 to 16. (C) Further comprising a step of correcting the orientation information of the crystal on the surface of the sample measured by the charged particle beam device based on the information regarding the error acquired in the step (a).
The program according to any one of claims 14 to 17. (D) Further comprising a step of outputting the orientation information of the crystal on the surface of the sample after being corrected in the step (c) so as to be displayed on an external display device.
The program of claim 18.

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