JP2020145618A - Piezoelectric wafer, manufacturing method of the piezoelectric wafer, and manufacturing method of piezoelectric vibration piece - Google Patents

Abstract

To improve an antishock property in a thickness direction.SOLUTION: A plurality of thick plate parts 10 in which an x direction is set to a longitudinal direction in a piezoelectric wafer 1, is arranged in a y direction. Each thick plate part 10 is integrally connected with the same thick coupling plate 11. In each thick plate part 10, each of a plurality of piezoelectric vibration pieces 20 arranged in a x direction is directly connected to each thick plate part 10 with at least one coupling leg 30. Thus, since the coupling leg 30 connecting each piezoelectric vibration piece 20 is directly connected to each thick plate part 10, antishock property in a thickness direction is more improved by making a width (a distance in the y direction) of each thick plate part 10 large. According to a first embodiment, since a stress in this direct connection part is concentrated by directly connecting the coupling leg 30 to the thick plate part 10, each piezoelectric vibration piece 20 can be easily cut-off (bent and removed) with the coupling leg 30.SELECTED DRAWING: Figure 1

Description

The present invention relates to a piezoelectric wafer, a method for manufacturing a piezoelectric wafer, and a method for manufacturing a piezoelectric vibrating piece, and more specifically, relates to a piezoelectric wafer in which a plurality of piezoelectric vibrating pieces are formed.

For example, in electronic devices such as mobile phones and personal digital assistants, piezoelectric vibration pieces using a crystal or the like are internally mounted as a device used as a timing source such as a time source or a control signal, or a reference signal source. Piezoelectrics are widely used.
The piezoelectric vibrating piece is used by folding each small piece of piezoelectric vibrating piece from a piezoelectric wafer in which a plurality of piezoelectric vibrating pieces are formed on a large-area piezoelectric wafer. The piezoelectric wafer uses a large-area wafer, is thinned to the thickness of the piezoelectric vibrating piece by wrapping, polishing, etc., and then transferred to the plate (connecting body) on the wafer by transfer, etching, etc. by photolithography technology. A plurality of chip patterns of connected piezoelectric vibration pieces are formed.
However, with the recent miniaturization of the piezoelectric vibrator, the piezoelectric vibrating piece has also become smaller and thinner (for example, 80 μm or 40 μm), so that the strength of the piezoelectric wafer formed with the same thickness as the piezoelectric vibrating piece becomes stronger. It becomes weak and the wafer is liable to warp or crack.
Therefore, Patent Document 1 proposes a piezoelectric wafer that is hard to break corresponding to a thin piezoelectric vibrating piece.

FIG. 5 shows a part of the piezoelectric wafer according to Patent Document 1.
As shown in FIG. 5, in the piezoelectric wafer 100 of Patent Document 1, a plurality of piezoelectric vibrating pieces 102 are connected to each of the parallel plate portions (connectors) 101 by legs 103. The connecting body 101 and the legs 103 are formed to have the same thickness as the piezoelectric vibrating piece 102.
A frame body 110 thicker than the piezoelectric vibrating piece 102 is formed on the outer edge of the piezoelectric wafer 100, and each plate portion 101 is integrally connected to the frame body 110.
According to the piezoelectric wafer described in Patent Document 1, since a thick portion is formed on the outer edge portion thereof, it is possible to increase the strength as compared with the case where the entire surface of the piezoelectric wafer is formed to have the same thickness as the piezoelectric wafer. is there.

However, in the piezoelectric wafer 100 of Patent Document 1, since only the frame body 110 at the outer edge thereof is formed to be thick, it is possible to sufficiently prevent the occurrence of warpage and cracking at the central portion away from the frame body 110. Can not.
Further, since the legs 103 of the plurality of piezoelectric vibrating pieces 102 are connected to the frame body 110 via the plate portion 101, the width of the thick portion (width in the y direction of the drawing) cannot be sufficiently secured. The strength of the frame 110, which is a thick part, was also insufficient.

Japanese Patent No. 4784700

An object of the present invention is to further improve the impact resistance in the thickness direction.

(1) In the invention according to claim 1, a plurality of piezoelectric vibrating pieces arranged side by side, a thick plate portion thicker than the piezoelectric vibrating piece, and a thickness equal to or less than the thickness of the piezoelectric vibrating piece. Provided is a piezoelectric wafer formed to a thickness, one end of which is connected to the piezoelectric vibrating piece and the other end of which is provided with at least one connecting leg connected to the thick plate portion.
(2) In the invention according to claim 2, the piezoelectric vibrating piece is a tuning fork type piezoelectric vibrating piece having a base portion and a pair of vibrating arm portions extending side by side from the base portion, and the connecting leg is a connecting leg. The piezoelectric wafer according to claim 1, wherein one end is connected to the opposite side of the vibrating arm portion at the base portion.
(3) In the invention according to claim 3, the width of the connecting leg is wider on the other end side connected to the thick plate portion than on the width of the one end side connected to the piezoelectric vibrating piece. The piezoelectric wafer according to claim 1 or 2, wherein the piezoelectric wafer is formed.
(4) In the invention according to claim 4, the connecting leg is constricted in the width direction between the one end side connected to the piezoelectric vibrating piece and the other end side connected to the thick plate portion. The piezoelectric wafer according to claim 1, claim 2, or claim 3, wherein the portion is formed.
(5) In the invention according to claim 5, a plurality of thick convex portions extending to the piezoelectric vibrating piece are formed on the thick plate portion, and the connecting leg is a side surface of the thick plate portion side. The piezoelectric wafer according to any one of claims 1 to 4, wherein a part of the piezoelectric wafer is connected to the side surface of the thick convex portion.
(6) The invention according to claim 6 is the method for manufacturing a piezoelectric wafer according to claim 1, wherein a plate-shaped crystal plate is processed to the thickness of a front thick plate portion. A thin-walled portion forming step of thinning a region other than the region having the same thickness as the pressure with respect to the polished crystal plate, and the connecting leg connected to the thick portion with respect to the formed thin-walled portion. Provided is a method for manufacturing a piezoelectric wafer, which comprises a pattern forming step of forming a plurality of chip patterns of the piezoelectric vibrating piece and an electrode forming step of patterning an electrode on the outer surface of the piezoelectric vibrating piece. ..
(7) In the invention according to claim 7, the piezoelectric wafer step of manufacturing a piezoelectric wafer by the piezoelectric wafer manufacturing method according to claim 1 and the chip pattern of the piezoelectric vibrating piece from the formed piezoelectric wafer are described. Provided is a method for manufacturing a piezoelectric vibrating piece, which comprises a separation step of breaking off with a connecting leg.

According to the present invention, since the connecting legs for connecting the plurality of piezoelectric vibrating pieces are directly connected to the thick plate portion, the impact resistance in the thickness direction can be further improved.

It is explanatory drawing which showed the state of the unit block in which a plurality of piezoelectric vibrating pieces were connected to the thick plate part in 1st Embodiment. It is explanatory drawing which showed the connection state of the piezoelectric vibrating piece in a unit block in 1st Embodiment. It is explanatory drawing which showed a part of the piezoelectric wafer in 2nd Embodiment. It is explanatory drawing which showed a part of the piezoelectric wafer in 3rd Embodiment. It is a perspective view which showed a part of the conventional piezoelectric wafer.

Hereinafter, preferred embodiments of the piezoelectric vibrating piece and the piezoelectric vibrator of the present invention will be described in detail with reference to FIGS. 1 to 4.
(1) Outline of the Embodiment In the present embodiment, a plurality of thick plate portions 10 having the x direction as the longitudinal direction are arranged in the y direction on the piezoelectric wafer 1, and each thick plate portion 10 has the same thickness. They are integrally connected by a connecting plate 11.
Each of the plurality of piezoelectric vibrating pieces 20 arranged in the x direction is directly connected to the thick plate portion 10 by at least one connecting leg 30. In this way, since the connecting legs 30 connecting the piezoelectric vibrating pieces 20 are directly connected to the thick plate portion 10, the width (distance in the y direction) of the thick plate portion 10 can be increased in the thickness direction. Impact resistance can be further improved.
In the first embodiment, since the connecting leg 30 is directly connected to the thick plate portion 10 and the stress at the direct connecting portion is concentrated, the piezoelectric vibrating piece 20 is cut (broken) by the connecting leg 30. It can be made easier.

In the second embodiment, the connecting leg 30 can be cut at a position closer to the piezoelectric vibrating piece 20 side by forming a constricted portion in the middle of the connecting leg 30 in the longitudinal direction.
Depending on the degree of stress concentrated on the stepped portion (connecting portion) d between the thick plate portion 10 and the connecting leg 30, the piezoelectric vibrating piece 20 may fall off during processing of the piezoelectric wafer 1 (during process flow). .. Therefore, in the third embodiment, a plurality of thick convex portions 12 are formed on the thick plate portion 10, and a part of the side surface of the connecting leg 30 on the thick plate portion 10 side is connected to the thick convex portion 12. By relaxing the stress concentration on the stepped portion d between the thick plate portion 10 and the connecting leg 30, the breakability of the connecting leg 30 is improved while preventing the piezoelectric vibrating piece 20 from falling off. ..

(2) Details of the Embodiment FIG. 1 is an explanatory view showing a state of a unit block 5 in which a plurality of piezoelectric vibration pieces 20 constituting the piezoelectric wafer 1 in the first embodiment are connected to a thick plate portion 10. is there. Including other drawings, the broken parts of each part are shown by dotted lines.
As shown in FIG. 1, in the piezoelectric wafer 1 of the first embodiment, a plurality of unit blocks 5 having a piezoelectric vibrating piece 20, a thick plate portion 10, and a connecting leg 30 are arranged side by side in the y direction of the drawing.
Each part of these piezoelectric wafers 1 is integrally formed of the same material.
Both ends of each unit block 5 in the x direction are connected to a wall-thick connecting plate 11 formed to have the same thickness as the wall-thick plate portion 10.
Although the outer shape of the piezoelectric wafer 1 is displayed as a square, it does not have to be square and may be circular. In this case, the thick plate portion 10 located at the outer edge portion of the piezoelectric wafer 1 and the outer edge side of the thick connecting plate 11 have a shape that conforms to the shape of the piezoelectric wafer 1.

2A and 2B are explanatory views showing the details of the unit block 5 constituting the piezoelectric wafer 1. FIG. 2A shows a part of a flat surface, and FIG. 2B shows a part of a perspective view.
As shown in FIG. 2, the unit block 5 includes a plurality of piezoelectric vibrating pieces 20 arranged side by side in the x-axis direction, a thick plate portion 10 formed to be thicker than the piezoelectric vibrating piece 20, and piezoelectric vibration. It is provided with a connecting leg 30 having the same thickness as the piezoelectric vibrating piece 20 that connects the piece 20 and the thick plate portion 10.
The piezoelectric vibration piece 20 is a so-called tuning fork type vibration piece formed of a piezoelectric material such as quartz, lithium tantalate, or lithium niobate, and vibrates when a predetermined voltage is applied.
The piezoelectric vibrating piece 20 includes a base portion 21, and a pair of vibrating arm portions 22 extending in the y direction are connected from one end side of the base portion 21. The pair of vibrating arms 22 vibrate with the end on the base 21 side as a fixed end and the opposite side as a free end.

In the piezoelectric vibrating piece 20 of the present embodiment including other embodiments, the vibrating arm portion 22 is formed with a widened portion wider than the vibrating arm portion 22 at the end on the free end side as a known configuration. It is possible to form a metal film on the surface of the widened portion, and further to form grooves extending in the longitudinal direction (y direction) on both main surfaces of the piezoelectric vibrating piece 20.
The widening portion increases the total weight and the moment of inertia during vibration to make it easier for the vibrating arm portion 22 to vibrate, thereby shortening the length of the vibrating portion (vibrating arm portion 22 and the widening portion) and further reducing the size. Is formed for.
The metal film formed on the surface of the widened portion is formed so that the frequency of the vibrating arm portion 22 is within the range of the nominal frequency of the device by removing an appropriate amount by, for example, laser irradiation.
Further, the grooves on both main surfaces of the piezoelectric vibrating piece 20 vibrate because the electrodes on the main surface of the vibrating arm portion 22 are also formed on the groove side surfaces by forming the cross section of the piezoelectric vibrating piece 20 into an H shape. It faces the electrodes on the side surface of the arm portion 22, and as a result, the electric field efficiency can be increased. As a result, when the same vibration frequency is obtained, the vibration loss is small and the CI value (crystal impedance or equivalent series resistance) can be suppressed to a low level even if the piezoelectric vibration piece 20 is miniaturized.

A pair (first system and second system) of excitation electrodes are formed on the outer surface (outer peripheral surface) of the vibrating arm portion 22 (not shown).
These two systems of excitation electrodes are electrodes that vibrate a pair of vibrating arms 22 at a predetermined resonance frequency in a direction of approaching or separating from each other when a voltage is applied, and vibrating arms in a state of being electrically separated. It is patterned and formed on the portion 22.
Further, although not shown, first and second mount electrodes connected to the excitation electrode of the first system and the excitation electrode of the second system are formed on one main surface of the base 21 at predetermined intervals. ing.

The thick plate portion 10 has a longitudinal direction in the x direction and is formed to have a thickness 1.5 to 2 times that of the piezoelectric vibrating piece 20.
For example, if the thickness of the piezoelectric vibrating piece 20 is 60 μm, the thick plate portion 10 is formed to be 90 μm to 120 μm.
Each piezoelectric vibrating piece 20 is connected to the thick plate portion 10 by two connecting legs 30 respectively. That is, one end side of each connecting leg 30 is connected to the base portion 21 of the piezoelectric vibrating piece 20, and the other end side of the connecting leg 30 is connected to the thick plate portion 10.
The two connecting legs 30 in the present embodiment are each connected to the end portion in the width direction (x direction) of the base portion 21, but are connected to the inside (from the center) of the end portion in the width direction of the base portion 21. It may be.
Further, in the present embodiment, two connecting legs 30 are formed, but one may be used, or three or more may be formed. When the thickness of the piezoelectric vibrating piece 20 becomes thinner, the connecting leg 30 may bend or break during the manufacturing process or movement at the connecting portion by the connecting leg 30, particularly the step portion d with the thick plate portion 10. It is preferable to provide two or more because of the property. When the piezoelectric vibrating piece 20 and the thick plate portion 10 are connected by one connecting leg 30, it is preferable that the connecting leg 30 is connected at the center of the base portion 21 in the width direction (x direction).

The thickness of the connecting leg 30 is formed to be less than or equal to the thickness of the piezoelectric vibrating piece 20, and is formed to have the same thickness in the present embodiment. That is, the piezoelectric vibrating piece 20 and the connecting leg 30 are formed to have a thickness of, for example, 60 μm.
As described above, in the present embodiment, the connecting leg 30 having the same thickness as the piezoelectric vibrating piece 20 may be connected to the thick plate portion 10 via the plate portion (connecting body) having the same thickness as the connecting leg 30. The connecting leg 30 is directly connected to the thick plate portion 10. As a result, when compared with the piezoelectric wafer 1 having the same area, the width of the thick plate portion 10 in the y direction can be increased, and as a result, the area of the entire thick plate portion 10 can be further increased.
Further, as described with reference to FIG. 1, all the thick plate portions 10 constituting the plurality of unit blocks 5 formed on the piezoelectric wafer 1 are formed thicker than the piezoelectric vibrating piece 20.
Therefore, according to the piezoelectric wafer 1 of the present embodiment, it is possible to suppress the occurrence of warpage and cracking and reduce the number of defective products.

On the other hand, the thick plate portion 10 is formed thicker than the piezoelectric vibrating piece 20, and the connecting leg 30 is formed to have a thickness of 20 or less the piezoelectric vibrating piece 20 so that the connecting portion between the thick plate portion 10 and the connecting leg 30 is formed. Is formed with a step portion d in the thickness direction (z direction).
The connecting leg 30 of the present embodiment is connected to a substantially central position of the thick plate portion 10 in the thickness direction (z direction), so that the step portion d is in the thickness direction (z direction) of the connecting leg 30. Formed on both sides.
As described above, in the present embodiment, the step portion d is formed at the connecting portion between all the connecting legs 30 and the thick plate portion 10, so that the stress generated by vibration in the manufacturing process or the moving process is generated by this step. It can be concentrated around part d. As a result, when the piezoelectric vibrating piece 20 is broken from the piezoelectric wafer 1, it can be easily broken by the connecting legs 30.
In addition, in this embodiment including other embodiments, the connecting legs 30 are connected at the center in the thickness direction of the thick plate portion 10, but even if they are connected so as to be unevenly distributed on one of the surface sides. Alternatively, the thick plate portion 10, the piezoelectric vibrating piece 20, and the connecting leg 30 may be connected so that one side surface is located on the same plane.

Next, the piezoelectric wafer 1 of the second embodiment will be described.
3A and 3B are explanatory views showing the details of the unit block 5 in the second embodiment, where FIG. 3A shows a part of a plane and FIG. 3B shows a part of a perspective view.
In the piezoelectric wafer 1 of the second embodiment and the third embodiment described later, a plurality of unit blocks 5 in which a plurality of piezoelectric vibrating pieces 20 are connected to the thick plate portion 10 by connecting legs 30 are arranged in the y direction. The configuration connected by the thick connecting plate 11 is the same as that of the first embodiment. Further, the thickness and material of the thick plate portion 10, the piezoelectric vibrating piece 20, and the connecting leg 30 are the same as those in the first embodiment.

In the unit block 5 of the first embodiment, the piezoelectric vibrating piece 20 is connected to the thick plate portion 10 by the connecting legs 30 having the same width.
On the other hand, in the connecting leg 30 of the second embodiment, a constricted portion 31 in the width direction (x direction) is formed in the middle of the longitudinal direction (y direction).
By forming the constricted portion 31 on the connecting leg 30, it is possible to make it easier to fold the piezoelectric vibrating piece 20 when it is broken.
Further, by providing the constricted portion 31, the piezoelectric vibrating piece 20 can be broken off on the base portion 21 side of the step portion d with the thick plate portion 10.

Further, as shown in FIG. 3, the connecting leg 30 of the second embodiment spreads at a constant angle from the constricted portion 31 toward the thick plate portion 10, so that the width (x) is wider than that of the first embodiment. It can be connected to the thick plate portion 10 in the direction).
As a result, the connection area between the connecting leg 30 and the thick plate portion 10 becomes wider, so even if the stress concentrated on the step portion d becomes large, the connecting leg 30 is being processed or moved during the processing or movement of the piezoelectric wafer 1. Is prevented from breaking and the piezoelectric vibrating piece 20 from falling off.

In the second embodiment, the constricted portion 31 has a minimum width, and the width is widened not only in the direction of the thick plate portion 10 but also in the direction of the base portion 21. On the other hand, the width of the predetermined position (hereinafter referred to as the constriction corresponding portion) in the longitudinal direction of the connecting leg 30 is set to the minimum width, the width is widened in the thick plate portion 10 direction from this, and the constriction is formed in the base 21 direction. It may be formed to have the same width as the corresponding portion.
Further, the connecting leg 30 may be formed so that the width of the side connected to the thick plate portion 10 is wider than the width of the side connected to the base portion 21. That is, the connecting portion between the connecting leg 30 and the base portion 21 may be the minimum width (constriction corresponding portion) of the connecting leg 30, and the width may be widened in the thick plate portion 10 direction.
In the modified example of the second embodiment described above, even if the stress concentrated on the step portion d becomes larger than that of the first embodiment, the breakage at the step portion d during machining or the like is suppressed and the breakage is suppressed. The piezoelectric vibrating piece 20 can be broken off on the base 21 side.

Next, the piezoelectric wafer 1 of the third embodiment will be described.
4A and 4B are explanatory views showing the details of the unit block 5 in the third embodiment, where FIG. 4A shows a part of a plane and FIG. 4B shows a part of a perspective view.
In the third embodiment, a structure is provided to further relieve the stress concentrated on the step portion d between the thick plate portion 10 and the connecting leg 30.
That is, as shown in FIG. 4, a wall-thick convex portion 12 having the same thickness (z width) as the wall-thick plate portion 10 is formed on the side surface (xz surface) of the wall-thick plate portion 10 on the piezoelectric vibration piece 20 side. ing.
The end of the connecting leg 30 on the opposite side of the piezoelectric vibrating piece 20 is connected to the thick plate portion 10, and a part of the side surface thereof is also connected to the side surface of the thick convex portion 12.
In this way, not only the connecting leg 30 is connected to the thick plate portion 10 on the xz surface, but also the side surface thereof is connected to the thick convex portion 12 on the yz surface, so that the thick plate portion 10 and the connecting leg 30 are connected. The stress concentration of the step portion d can be relaxed.
Further, in the third embodiment, since the constricted portion 31 is formed as in the second embodiment, the piezoelectric vibrating piece 20 is formed at the constricted portion 31 while relaxing the stress concentration due to the connection with the thick convex portion 12. It can be easily broken off.

By forming the thick convex portion 12 of the third embodiment between the two piezoelectric vibrating pieces 20, both side surfaces of the thick convex portion 12 are connected to the outer side surfaces of the two connecting legs 30. .. Of all the connecting legs 30, both connecting legs 30 located at both ends in the x direction are connected to the inner side surface of the thick connecting plate 11 (see FIG. 1).
The connecting leg 30 of the third embodiment is connected to the thick plate portion 10, and the outer side surfaces of the two connecting legs 30 are both connected to the thick connecting plate 11. On the other hand, depending on the stress of the step portion d assumed by the thickness (z direction) of the connecting leg 30 and the size of the piezoelectric vibrating piece 20, only the outside of one of the connecting legs 30 is thickly connected. It may be connected to the plate 11.
Further, when the stress assumed in the step portion d is large, the thick convex portion 12 may be connected not only on the outer side surface of each connecting leg 30 but also on the inner side surface. In this case, two thick convex portions 12 are formed between the two connecting legs 30 that connect each piezoelectric vibrating piece 20 to the thick plate portion 10.

In the piezoelectric wafer 1 described in each embodiment and its modification, the entire wafer is wrapped up to the thickness of the thick plate portion, polished, or the like to the thickness of the thick plate portion 10 and the thick connecting plate 11 as in the conventional case. Thinn the wall (thickening process).
After that, a plurality of chip patterns of the piezoelectric vibrating piece and the connecting leg are formed with the thickness required for the piezoelectric vibrating piece 20 and the connecting leg 30 by transfer, etching or the like by a photolithography technique. That is, after masking the thick plate portion 10 and the thick connecting plate 11 (thick portion), the portion other than the thick portion is thinned to the thickness of the piezoelectric vibrating piece 20 and the connecting leg 30 by etching treatment. (Thin wall forming step). After that, the thick portion is masked, the chip pattern corresponding to each embodiment of the piezoelectric vibrating piece 20 and the connecting leg 30 is masked on the thin portion, and the chip pattern of the shape is formed on the thin portion by etching processing (pattern). Formation process).
After that, the excitation electrodes and the mount electrodes of the first system and the second system are patterned and formed on the outer surface (outer peripheral surface) of the vibrating arm portion 22 (electrode forming step).
From the piezoelectric wafer manufactured by the above method, the chip pattern of the piezoelectric vibrating piece 20 is broken off at the connecting leg 30 portion (separation step), whereby the piezoelectric vibrating piece is manufactured.

According to each of the above-described embodiments and modifications, the thickness of the thick plate portion 10 is formed to be thicker than that of the piezoelectric vibrating piece 20, and the connecting leg 30 of the piezoelectric vibrating piece 20 is directly attached to the thick plate portion 10. By connecting, the width (area of the xy surface) of the thick plate portion 10 in the y direction can be increased, and sufficient strength in the thickness direction can be obtained.
Further, in the piezoelectric wafer 1 of the present embodiment, not only the outer peripheral portion thereof but also the thick plate portions 10 of all the unit blocks 5 arranged in the y direction are formed to be thick, so that the piezoelectric wafer 1 as a whole is formed. The area of the thick portion (thick plate portion 10 and the thick connecting plate 11) can be increased, and the strength in the thickness direction can be further increased.

In the present embodiment, the piezoelectric wafer in which a plurality of tuning fork type piezoelectric vibrating pieces are connected to the thick plate portion has been described, but it is also possible to form various other types of piezoelectric vibrating pieces. In the present embodiment, the cantilever type piezoelectric vibrating piece 20 having a mounting portion on the piezoelectric vibrator at the base portion 21 has been described. For example, support portions for mounting are formed on both outer sides of the vibrating arm portion 22 from the base portion 21. A so-called side arm type piezoelectric vibrating piece or a so-called center arm type piezoelectric vibrating piece in which one support portion for mounting is formed between the base portion 21 and both vibrating arm portions 22 may be formed. In this case, the connecting leg 30 connects the base portion 21 and the thick plate portion 10 as in each of the described embodiments. In the side arm type and center arm type piezoelectric vibrating pieces, two systems of excitation electrodes are formed in the same manner as in the present embodiment, and mount electrodes connected to these excitation electrodes are formed in a support portion for mounting.
Further, in addition to the tuning fork type piezoelectric vibrating piece, various other locking piezoelectric vibrating pieces such as an inverted mesa type AT-cut crystal vibrating piece may be applied to a piezoelectric wafer connected to a thick plate portion by a connecting leg. Is also possible.

1 Piezoelectric wafer 5 Unit block 10 Thick plate part 11 Thick connecting plate 12 Thick convex part 20 Piezoelectric vibrating piece 21 Base 22 Vibrating arm 30 Connecting leg 31 Constriction d Step d

Claims (7)

Multiple piezoelectric vibrating pieces arranged side by side,
A thick plate portion thicker than the piezoelectric vibrating piece,
With at least one connecting leg formed to a thickness equal to or less than the thickness of the piezoelectric vibrating piece, one end of which is connected to the piezoelectric vibrating piece and the other end of which is connected to the thick plate portion.
A piezoelectric wafer characterized by the above. The piezoelectric vibrating piece is a tuning fork type piezoelectric vibrating piece having a base and a pair of vibrating arms extending side by side from the base.
The connecting leg has one end connected to the opposite side of the vibrating arm at the base.
The piezoelectric wafer according to claim 1, wherein the piezoelectric wafer is characterized in that. The connecting leg is formed so that the width of the other end side connected to the thick plate portion is wider than the width of the one end side connected to the piezoelectric vibrating piece.
The piezoelectric wafer according to claim 1 or 2, wherein the piezoelectric wafer is characterized in that. The connecting leg has a constricted portion in the width direction formed between the one end side connected to the piezoelectric vibrating piece and the other end side connected to the thick plate portion.
The piezoelectric wafer according to claim 1, claim 2, or claim 3. A plurality of thick convex portions extending to the piezoelectric vibrating piece are formed on the thick plate portion.
A part of the side surface of the connecting leg on the thick plate portion side is connected to the side surface of the thick convex portion.
The piezoelectric wafer according to any one of claims 1 to 4, wherein the piezoelectric wafer is characterized in that. The method for manufacturing a piezoelectric wafer according to claim 1.
A wall thickness processing process that processes a flat crystal plate to the thickness of the front thick plate part,
A thin-walled portion forming step of thinning a region other than the region having the same thickness as the pressure with respect to the polished quartz plate.
A pattern forming step of forming a plurality of chip patterns of the connecting legs and the piezoelectric vibrating pieces connected to the thick portion on the formed thin portion.
An electrode forming step of patterning an electrode on the outer surface of the piezoelectric vibrating piece, and
A method for manufacturing a piezoelectric wafer, which comprises the above. A piezoelectric wafer process for producing a piezoelectric wafer by the piezoelectric wafer manufacturing method according to claim 1.
A separation step of breaking off the chip pattern of the piezoelectric vibrating piece from the formed piezoelectric wafer with the connecting legs, and
A method for manufacturing a piezoelectric vibrating piece, which comprises the above.

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