JP2020143936A - Infrared sensor device, signal processor, and signal processing method - Google Patents

Abstract

To provide an infrared sensor device, a signal processor and a signal processing method capable of increasing the speed of the frame rate.SOLUTION: An infrared sensor device 300 includes an infrared sensor 100, a signal processing unit 201, and a selection part 202. The infrared sensor 100 has multiple detection units 2 which are arranged in a two-dimensional array. The signal processing unit 201 performs a signal processing of output signals of infrared sensor 100 to continuously generating static heat image data. The selection part 202 detects a detection unit 2 to which an output signal should be output to the signal processing unit 201 out of the multiple detection units 2. The selection part 202 has a mode for detecting desired detection units 2 corresponding to one static heat image data out of the multiple detection units 2 depending on specific conditions.SELECTED DRAWING: Figure 1

Description

The present disclosure relates to an infrared sensor device, a signal processing device and a signal processing method in general, and more particularly to an infrared sensor device, a signal processing device and a signal processing method including a signal processing unit for signal processing the output signal of the infrared sensor.

Conventionally, as an infrared sensor device, a temperature sensor including an infrared sensor, a thermistor, and an IC element (signal processing device) is known (Patent Document 1).

In the infrared sensor, a plurality of pixel units (detection units) including a thermal infrared detection unit and a MOS transistor are arranged in a two-dimensional array on one surface side of the semiconductor substrate.

The IC element includes a first amplifier circuit, a second amplifier circuit, a multiplexer, an A / D conversion circuit, a calculation unit, a memory, and a control circuit.

Japanese Unexamined Patent Publication No. 2012-13517

In the infrared sensor and the infrared sensor device described in Patent Document 1, it may be desired to further increase the frame rate.

An object of the present disclosure is to provide an infrared sensor device, a signal processing device, and a signal processing method capable of increasing the frame rate.

The infrared sensor device according to one aspect of the present disclosure includes an infrared sensor, a signal processing unit, and a selection unit. The infrared sensor has a plurality of detection units arranged in a two-dimensional array. The signal processing unit processes the output signal of the infrared sensor to continuously generate static thermal image data. The selection unit selects a detection unit that outputs the output signal to the signal processing unit among the plurality of detection units. The selection unit has a mode of selecting an arbitrary detection unit corresponding to one static thermal image data among the plurality of detection units according to a specific condition.

The signal processing device according to one aspect of the present disclosure includes a signal processing unit and a selection unit. The signal processing unit processes the output signal of an infrared sensor having a plurality of detection units arranged in a two-dimensional array to continuously generate static thermal image data. The selection unit selects a detection unit that outputs the output signal to the signal processing unit among the plurality of detection units. The selection unit has a mode of selecting an arbitrary detection unit corresponding to one static thermal image data among the plurality of detection units according to a specific condition.

The signal processing method according to one aspect of the present disclosure includes a generation step of continuously generating static thermal image data by signal processing the output signals of an infrared sensor having a plurality of detection units arranged in a two-dimensional array. It includes a selection step of selecting a detection unit for outputting an output signal for signal processing in the generation step among the plurality of detection units. In the selection step, an arbitrary detection unit corresponding to the static thermal image data of one of the plurality of detection units is selected according to a specific condition.

The infrared sensor device, the signal processing device, and the signal processing method according to one aspect of the present disclosure can increase the frame rate.

FIG. 1 is a circuit block diagram of the infrared sensor device according to the first embodiment. FIG. 2 is a layout diagram of a plurality of detection units of the infrared sensor in the infrared sensor device of the same. FIG. 3A is a partially cutaway plan view of the detection unit of the infrared sensor in the infrared sensor device of the same. FIG. 3B is a sectional view taken along the line AA of FIG. 3A. FIG. 4 is a cross-sectional view of the infrared sensor device of the same. FIG. 5 is an operation explanatory view of the same infrared sensor device. FIG. 6 is an operation explanatory view of the same infrared sensor device. FIG. 7 is a circuit block diagram of the infrared sensor device according to the second embodiment.

Each figure described in the following embodiment is a schematic view, and the ratio of the size and the thickness of each component in the figure does not necessarily reflect the actual dimensional ratio.

(Embodiment 1)
Hereinafter, the infrared sensor device 300 according to the first embodiment will be described with reference to FIGS. 1, 2, 3A and 3B.

(1) Components of Infrared Ray Sensor Device The infrared sensor device 300 includes an infrared sensor 100 and a signal processing device 200. The infrared sensor 100 has a plurality of detection units (pixel units) 2 arranged in a two-dimensional array. The signal processing device 200 has a signal processing unit 201 and a selection unit 202. Further, the infrared sensor device 300 further includes a thermistor 110. In addition, the infrared sensor device 300 further includes a package 260.

(2) Details of the infrared sensor device (2.1) Infrared sensor The infrared sensor 100 is formed on a substrate 1 having a first main surface 11 and a second main surface and on the first main surface 11 side of the substrate 1. A plurality of (for example, 64) detection units 2 are provided. The second main surface is located on the opposite side of the first main surface 11 in the thickness direction D1 of the substrate 1. The substrate 1 is a silicon substrate.

The outer peripheral shape of the infrared sensor 100 in a plan view from the thickness direction D1 of the infrared sensor 100 is, for example, a square shape. The outer peripheral shape of the infrared sensor 100 is not limited to a square shape, but may be, for example, a rectangular shape.

A plurality of (for example, 64) detection units 2 are arranged in m rows and n columns on the first main surface 11 side of the substrate 1 and on the first main surface 11 side of one substrate 1 as illustrated in FIG. m and n are natural numbers) and are arranged in a two-dimensional array. In the example shown in FIG. 2, m = 8 and n = 8.

The infrared sensor 100 includes a film structure 3 that forms a part of each of the plurality of detection units 2. The film structure 3 is supported by the substrate 1 on the first main surface 11 side of the substrate 1. Here, the film structure 3 includes a plurality of thermal infrared detection units 4 having a one-to-one correspondence with the plurality of detection units 2. Therefore, the plurality of thermal infrared detection units 4 are arranged in a two-dimensional array on the first main surface 11 side of one substrate 1. More specifically, the plurality of thermal infrared detection units 4 are arranged in a two-dimensional array of 8 rows and 8 columns on the first main surface 11 side of one substrate 1.

The film structure 3 includes a silicon oxide film 31, a silicon nitride film 32, an interlayer insulating film 33, and a passivation film 34. In the film structure 3, the silicon oxide film 31, the silicon nitride film 32, the interlayer insulating film 33, and the passivation film 34 are arranged in this order from the substrate 1 side. Here, the silicon oxide film 31 is directly supported by the substrate 1. The plurality of thermal infrared detection units 4 in the film structure 3 include a thermoelectric conversion unit 5 formed on the silicon nitride film 32. The interlayer insulating film 33 covers the thermoelectric conversion section 5 on the surface side of the silicon nitride film 32. The interlayer insulating film 33 is, for example, a BPSG (Boron Phosphorus Silicon Glass) film. The passivation film 34 is, for example, a laminated film of a PSG (Phospho-Silicate Glass) film and an NSG (Non doped Silicate Glass) film formed on the PSG film. In the film structure 3, the portion formed in the thermal infrared detection unit 4 in the laminated film of the interlayer insulating film 33 and the passivation film 34 also serves as the infrared absorbing film 70.

Each of the plurality of thermal infrared detection units 4 includes a thermoelectric conversion unit 5. The thermoelectric conversion unit 5 includes a plurality of (for example, 6) thermopile 6. In the thermoelectric conversion unit 5, a plurality of thermopile 6s are connected in series.

Each of the plurality of detection units 2 includes a thermal infrared detection unit 4 and a MOS transistor 7. Each of the plurality of MOS transistors 7 is a switching element for selecting a pixel portion. In other words, each of the plurality of MOS transistors 7 is a switching element for extracting the output voltage of the thermoelectric conversion unit 5. Each of the plurality of MOS transistors 7 has a well region 71, a drain region 73, a source region 74, a channel stopper region 72, a gate insulating film 75, a gate electrode 76, a drain electrode 77, a source electrode 78, and a ground electrode 79.

In the infrared sensor 100, a plurality of first wirings (vertical read lines) in which the first end of the thermoelectric conversion unit 5 of the plurality (8) detection units 2 in each row is commonly connected to each row via the MOS transistor 7 A plurality of second wirings (horizontal signal lines) in which the gate electrodes 76 of the MOS transistors 7 of the plurality of (eight) detection units 2 in each row are commonly connected to each row are provided. Further, the infrared sensor 100 has a plurality of third wirings (ground lines) in which the well regions 71 of the MOS transistors 7 of the detection units 2 in each row are commonly connected to each row, and a common ground in which each ground line is commonly connected. It is equipped with a wire (fourth wiring). Further, the infrared sensor 100 includes a plurality of reference bias lines (fifth wiring) in which the second ends of the thermoelectric conversion units 5 of the plurality of detection units 2 in each row are commonly connected to each row. Here, the gate electrode 76 of the MOS transistor 7 is connected to the corresponding second wiring among the plurality of second wirings. Further, the source electrode 78 of the MOS transistor 7 is connected to the corresponding fifth wiring among the plurality of fifth wirings via the thermoelectric conversion unit 5. Further, the drain electrode 77 of the MOS transistor 7 is connected to the corresponding first wiring among the plurality of first wirings. Therefore, the infrared sensor 100 can sequentially read out the output voltages of the plurality of detection units 2. The infrared sensor 100 includes a plurality of (eight) first pads 101 for output in which a plurality of first wires are connected one-to-one, and a plurality (eight) in which a plurality of second wires are connected one-to-one. A second pad 102, a third pad to which a plurality of third wires are commonly connected, and a fourth pad for reference bias to which the fourth wiring is commonly connected are provided.

Further, the substrate 1 has a plurality of cavities 13 having a one-to-one correspondence with the plurality of thermal infrared detection units 4 on the first main surface 11 side. The opening shape of the cavity 13 on the first main surface 11 of the substrate 1 is rectangular. Each of the plurality of cavities 13 in the substrate 1 is formed directly below a part of the corresponding thermal infrared ray detection unit 4 among the plurality of thermal infrared ray detection units 4. As a result, each part of the plurality of thermal infrared detection units 4 is separated from the substrate 1 in the thickness direction D1 of the substrate 1. The portion of the thermal infrared detection unit 4 located inside the opening edge of the cavity 13 in the plan view of the thickness direction D1 of the substrate 1 penetrates the thickness direction D1 and is connected to the cavity 13 (communication). A plurality of slits 44 are formed.

In the plurality of thermal infrared detection units 4, since the plurality of slits 44 are formed, the portion overlapping the cavity 13 in the thickness direction D1 is divided into six regions, and each of the six regions is divided into six regions. Includes one thermopile 6.

The thermopile 6 has a plurality of (9) thermocouples 60. Each of the plurality of thermocouples 60 electrically connects the first ends of the n-type polysilicon wiring 61, the p-type polysilicon wiring 62, and the n-type polysilicon wiring 61 and the p-type polysilicon wiring 62. The first connection portion 63 and the like are included. The n-type polysilicon wiring 61 and the p-type polysilicon wiring 62 are formed on the silicon nitride film 32. The material of the first connecting portion 63 is, for example, an Al—Si alloy. The thermopile 6 has a second connecting portion 64 that electrically connects the second ends of the n-type polysilicon wiring 61 and the p-type polysilicon wiring 62 of the adjacent thermocouples 60 among the plurality of thermocouples 60. Includes. The material of the second connecting portion 64 is, for example, an Al—Si alloy.

Here, in the thermopile 6, one warm contact T1 is formed between the first end of the n-type polysilicon wiring 61, the first end of the p-type polysilicon wiring 62, and the first connection portion 63 in each of the plurality of thermocouples 60. It is configured. Therefore, the thermopile 6 includes a plurality (nine) hot contacts T1. Further, in the thermopile 6, one cold contact T2 is formed by the second end of the n-type polysilicon wiring 61 of two adjacent thermocouples 60, the second end of the p-type polysilicon wiring 62, and the second connection portion 64. are doing. Therefore, the thermopile 6 includes a plurality (8) cold contacts T2.

Each hot contact T1 of the thermopile 6 is arranged so as to overlap the cavity 13 in the thickness direction D1 of the substrate 1, and each cold contact T2 is arranged so as not to overlap the cavity 13 in the thickness direction D1 of the substrate 1. Has been done. That is, the hot contact T1 is included in the first portion 41 that overlaps the cavity 13 in the thermal infrared detection unit 4, and the cold contact T2 is included in the second portion 42 that does not overlap the cavity 13 in the thermal infrared detection unit 4. include.

(2.2) Thermistor Thermistor 110 measures the absolute temperature. The thermistor 110 is a chip type thermistor.

The thermistor 110 is arranged near the infrared sensor 100 in order to detect the temperature of the cold contact T2 of the infrared sensor 100.

(2.3) Package Package 260 houses an infrared sensor 100, a thermistor 110, and a signal processing device 200. The signal processing device 200 is an IC chip.

The package 260 has a package body 261 and a package lid 262.

The package body 261 is equipped with an infrared sensor 100, a signal processing device 200, and a thermistor 110. The package body 261 is a ceramic substrate, and is provided with a conductor portion for wiring and the like. The infrared sensor 100, the signal processing device 200, and the thermistor 110 are mounted on the package body 261. The thermistor 110 is mounted on the package body 261 side by side with the infrared sensor 100.

The package lid 262 is formed in a box shape with one side open on the package body 261 side. The package lid 262 includes a cap 263 and a lens 264. The material of the cap 263 is, for example, metal. The cap 263 is joined to the package body 261. The cap 263 has a through hole 263a formed in a region overlapping the infrared sensor 100 in the thickness direction D1 of the substrate 1 of the infrared sensor 100. The lens 264 closes the through hole 263a of the cap 263. The lens 264 is, for example, an aspherical lens.

In the infrared sensor device 300 according to the first embodiment, the atmosphere of the internal space of the package 260 is, for example, a dry nitrogen atmosphere.

(3) Signal processing device The signal processing device 200 has a signal processing unit 201 and a selection unit 202. The signal processing unit 201 processes the output signal of the infrared sensor 100. Here, the signal processing unit 201 processes the output signal of the infrared sensor 100 to continuously generate static thermal image data. The signal processing unit 201 also processes the output signal of the thermistor 110.

The signal processing unit 201 includes a first amplifier circuit, a second amplifier circuit, a multiplexer, an A / D conversion circuit, a calculation unit, and a storage unit. The first amplifier circuit amplifies the output voltage (output signal) of the infrared sensor 100. The second amplifier circuit amplifies the output voltage (output signal) of the thermistor 110. The multiplexer alternately inputs the output voltage of the thermoelectric conversion unit 5 of the plurality of detection units 2 of the infrared sensor 100 to the first amplifier circuit. Further, the A / D conversion circuit converts the output voltage of the infrared sensor 100 amplified by the first amplifier circuit and the output voltage of the thermistor 110 amplified by the second amplifier circuit into digital values. The calculation unit obtains the temperature distribution in the detection area of the infrared sensor device 300 by using the digital values output from the A / D conversion circuit corresponding to the output voltages of the infrared sensor 100 and the thermistor 110. Here, the calculation unit calculates the temperature of an object in the detection area by using the output signals of each of the plurality of detection units 2 of the infrared sensor 100 and the output signals of the thermistor 110. The detection area of the infrared sensor device 300 is determined by the shape of the lens 264 arranged on the light receiving surface side of the infrared sensor 100 and the like. The memory stores data and the like used for calculation in the calculation unit. The selection unit 202 includes a control circuit that controls a plurality of MOS transistors 7 of the infrared sensor 100. In the signal processing device 200, the outputs of all the detection units 2 of the infrared sensor 100 can be read out in time series. The signal processing device 200 appropriately controls the potential of each of the plurality of first pads 101 of the infrared sensor 100 and the potential of each of the plurality of second pads 102 by the selection unit 202, thereby appropriately controlling the output voltage of each of the plurality of detection units 2. Can be read out in sequence.

The signal processing unit 201 processes the output signal of the infrared sensor 100 to continuously generate static thermal image data. The static thermal image data is data of the temperature distribution in the detection area, and can be used to generate a thermal image showing the temperature distribution in the detection area. The signal processing device 200 can sequentially output the static thermal image data generated by the signal processing unit 201. In a display device that uses static thermal image data output from the signal processing device 200, for example, thermal images (static thermal image P1) corresponding to the static thermal image data sequentially output from the signal processing device 200 are sequentially displayed. .. Here, the signal processing device 200 includes a communication interface 205 for communicating static thermal image data and the like with the outside. Each of the pixel values of the plurality of pixels in the static thermal image P1 is a temperature.

The selection unit 202 selects the detection unit 2 that outputs an output signal to the signal processing unit 201 among the plurality of detection units 2.

Further, the selection unit 202 has a first mode and a second mode as operation modes. The first mode is a mode in which all of the plurality of detection units 2 are selected. The second mode is a mode in which an arbitrary detection unit 2 corresponding to one static thermal image data among the plurality of detection units 2 is selected according to a specific condition. Here, the selection unit 202 may have at least a second mode of the first mode and the second mode as the operation mode, and the first mode is not an indispensable mode. The arbitrary detection unit 2 selected in the second mode is, for example, a group of detection units 2 which is at least one less than the total number of the plurality of detection units 2. In FIG. 1, an example of a group of detection units 2 selected in the second mode is surrounded by a broken line.

The signal processing device 200 further includes a region detection unit 203. The area detection unit 203 detects the object area E1 (see FIG. 5) corresponding to the object on the static heat image P1 (see FIG. 5) corresponding to the static heat image data generated by the signal processing unit 201. .. The object region E1 is, for example, a collection of pixels having a pixel value equal to or higher than a threshold value (for example, 30 ° C.). In FIG. 5, dots are not attached to pixels having a pixel value less than the threshold value, but dots are attached to pixels having a pixel value equal to or higher than the threshold value, and the larger the pixel value, the higher the dot density. .. Here, when the region detection unit 203 detects a collection of pixel data whose pixel value is equal to or higher than a threshold value (for example, 30 ° C.) based on the static thermal image data, the region detection unit 203 has an object region among the plurality of detection units 2. The group of the detection unit 2 corresponding to the group of pixels of E1 is specified. The detection area of the infrared sensor device 300 is, for example, a space including one seat (driver's seat, passenger's seat, etc.) in the vehicle interior of the automobile. In this case, the object is a person sitting in a seat. The specific condition described above is, for example, a condition that the object region E1 is detected by the region detection unit 203.

The selection unit 202 selects a group of detection units 2 corresponding to a group of pixels in the object region E1 among the plurality of detection units 2 according to a specific condition.

Further, the infrared sensor device 300 further includes an estimation unit 204. The estimation unit 204 estimates the feeling of warmth and coldness of a person. The feeling of warmth and coldness is the feeling of heat and cold that a person feels. Specifically, the feeling of warmth and coldness can be expressed by an index such as a predicted average feeling of warmth and coldness (PMV: Predicated Mean Vote). PMV is determined in consideration of, for example, temperature, humidity, air flow, heat radiation, metabolic rate and clothing amount. The estimation unit 204 estimates the feeling of warmth and coldness of a person by detecting the skin temperature of the portion exposed from the clothes of the person based on, for example, the static heat image P1 (corresponding to the static heat image data). It is known that, depending on the part of the human body, the skin temperature of the part has a high correlation with the feeling of warmth and coldness. An example of a site having a high correlation with warmth and coldness is the nose. The value obtained by subtracting the skin temperature of the nose from the skin temperature of the forehead also shows a high correlation with the feeling of warmth and coldness. The estimation unit 204 obtains the skin temperature of the portion required for estimating the warm / cold sensation from the static heat image P1 and estimates the warm / cold sensation from the result. The method for estimating the feeling of warmth and coldness is not limited to the above method. For example, the estimation unit 204 may calculate the temperature difference between the person and the surroundings from the static heat image P1, calculate the heat dissipation amount of the person, and estimate the PMV based on the correlation between the heat dissipation amount and the PMV. Good.

When the selection unit 202 selects the detection unit 2 corresponding to the collection of pixels among the plurality of detection units 2, the selection unit 202 sets the pixel or the center of gravity C1 including the center of gravity C1 of the area corresponding to the human face in the object area E1. The corresponding detection unit 2 is selected in order from the center pixel to the outer pixel, with one closest pixel as the center pixel. FIG. 6 is a diagram schematically showing an example of a thermal image, and the order from the center pixel to the outer pixel is indicated by an arrow. In the example shown in FIG. 6, for the region corresponding to the human face, a group of detection units 2 corresponding to a group of pixels arranged along a clockwise spiral from one pixel closest to the center of gravity C1 is selected. However, the present invention is not limited to this, and for example, a group of detection units 2 corresponding to pixels arranged along a counterclockwise spiral may be selected. As a result, in the static thermal image P1, the thermal responsiveness of the detection unit 2 corresponding to the central portion (central portion of the human face) including the central pixel is made higher than the thermal responsiveness of the detection unit 2 corresponding to the peripheral portion. It is possible to improve the accuracy of the pixel value (temperature) of the pixel corresponding to the central portion.

The executing subject of the signal processing device 200 includes a computer system. The computer system has one or more computers. The main configuration of a computer system is a processor and memory as hardware. When the processor executes the program recorded in the memory of the computer system, the function as the execution subject of the signal processing device 200 in the present disclosure is realized. The program may be pre-recorded in the memory of the computer system, may be provided through a telecommunications line, or may be non-temporary, such as a memory card, optical disk, hard disk drive (magnetic disk) readable by the computer system. It may be recorded and provided on a target recording medium. A processor in a computer system is composed of one or more electronic circuits including a semiconductor integrated circuit (IC) or a large scale integrated circuit (LSI). A plurality of electronic circuits may be integrated on one chip, or may be distributed on a plurality of chips. The plurality of chips may be integrated in one device, or may be distributed in a plurality of devices.

The signal processing device 200 is, for example, an ASIC (Application Specific Integrated Circuit), but is not limited to this. For example, the signal processing device 200 may have a configuration including an ASIC including a signal processing unit 201 and a selection unit 202, and a region detection unit 203 and an estimation unit 204 provided separately from the ASIC.

(4) Signal Processing Method The signal processing device 200 employs the following signal processing method.

The signal processing method includes a generation step and a selection step. In the generation step, the output signals of the infrared sensors 100 having a plurality of detection units 2 arranged in a two-dimensional array are signal-processed to continuously generate static thermal image data. In the selection step, the detection unit 2 that outputs the output signal to be signal-processed in the generation step is selected from the plurality of detection units 2. The selection step selects an arbitrary detection unit 2 that corresponds to the static thermal image data of one of the plurality of detection units 2 according to a specific condition.

(5) Effect In the infrared sensor device 300 and the signal processing device 200 according to the first embodiment, the selection unit 202 is an arbitrary detection that corresponds to the static thermal image data of one of the plurality of detection units 2 according to a specific condition. Since it has a mode for selecting the unit 2, it is possible to increase the frame rate.

Further, the infrared sensor device 300 may include a plurality of A / D conversion circuits. Here, in the infrared sensor device 300, since any detection unit 2 corresponding to one static thermal image P1 can be selected, the number of A / D conversion circuits can be reduced, and the frame rate can be increased while suppressing the increase in size. It becomes possible to plan.

(Embodiment 2)
Hereinafter, the infrared sensor device 300A according to the second embodiment will be described with reference to FIG. 7. Regarding the infrared sensor device 300A according to the second embodiment, the same components as the infrared sensor device 300 according to the first embodiment are designated by the same reference numerals and the description thereof will be omitted.

The signal processing device 200A in the infrared sensor device 300A according to the second embodiment does not include the area detection unit 203 and the estimation unit 204 of the signal processing device 200 in the infrared sensor device 300 according to the first embodiment.

In the infrared sensor device 300A according to the second embodiment, when the selection unit 202 selects a plurality of detection units 2, the selection unit 202 uses a plurality of (for example, 64) detection units 2 as one static thermal image data as a specific condition. The plurality of groups G1 are divided into arbitrary plurality (for example, four) groups G1 corresponding to the above, and the plurality of groups G1 are selected in order.

In the example of FIG. 7, the upper left group G1 is the first group G11, the upper right group G1 is the second group G12, the lower left group G1 is the third group G13, and the lower right group G1 is the fourth of the plurality of groups G1. It is in group G14.

In the infrared sensor device 300A according to the second embodiment, the first process, the second process, the third process, and the fourth process are cyclically performed in the order of the first process, the second process, the third process, and the fourth process. repeat. The first process is a process of generating static thermal image data based on the output signal of the detection unit 2 of the group of the first group G11. The second process is a process of generating static thermal image data based on the output signal of the detection unit 2 of the group of the second group G12. The third process is a process of generating static thermal image data based on the output signal of the detection unit 2 of the group of the third group G13. The fourth process is a process of generating static thermal image data based on the output signal of the detection unit 2 of the group of the fourth group G14.

The selection unit 202 sets the corresponding detection unit 2 in order from the center pixel to the outer pixel, with the pixel including the center of gravity C11 of the region corresponding to each of the plurality of groups G1 or the one pixel closest to the center of gravity C11 as the center pixel. select. As a result, in the static thermal image P1, the thermal responsiveness of the detection unit 2 corresponding to the central portion including the central pixel can be made higher than the thermal responsiveness of the detection unit 2 corresponding to the peripheral portion, and corresponds to the central portion. It is possible to improve the accuracy of the pixel value (temperature) of the pixel.

In the infrared sensor device 300A and the signal processing device 200A according to the second embodiment, the selection unit 202 selects an arbitrary detection unit 2 corresponding to the static thermal image data of one of the plurality of detection units 2 according to a specific condition. Since it has a mode to perform, it is possible to increase the frame rate.

(Modification example)
The above embodiment is only one of the various embodiments of the present disclosure. The above-described embodiment can be changed in various ways depending on the design and the like as long as the object of the present disclosure can be achieved.

For example, the connection relationship between the plurality of thermopile 6s in the thermoelectric conversion unit 5 is not limited to the above example. That is, the thermoelectric conversion unit 5 is not limited to a configuration in which all of the plurality of thermopile 6s are connected in series, but may be configured in which a plurality of thermopile 6s are connected in parallel, or a plurality of thermopile 6s are connected in series and parallel. It may be configured to be present. Further, the number of thermopile 6 in the thermoelectric conversion unit 5 is not limited to a plurality, and may be one, for example.

Further, the thermoelectric conversion unit 5 is not limited to the plurality of thermopile 6, and may be, for example, a resistance bolometer, a pyroelectric element, or the like. Further, in the infrared sensor device 300, the thermistor 110 is not an essential component.

Further, in the infrared sensor 100, each of the plurality of detection units 2 includes the MOS transistor 7, but in the modified example of the infrared sensor 100, the MOS transistor 7 may be provided in addition to the detection unit 2. Further, in another modification of the infrared sensor 100, each MOS transistor 7 is not an essential component of the infrared sensor 100.

The object may be an object having a temperature different from that of the background (surroundings) in the space where the object exists, and may be an object other than a living body (for example, a television receiver) as well as a human being. In this case, the object region E1 may be a group of pixels having a pixel value less than the threshold value.

(Aspect)
The infrared sensor device (300; 300A) according to the first aspect includes an infrared sensor (100), a signal processing unit (201), and a selection unit (202). The infrared sensor (100) has a plurality of detection units (2) arranged in a two-dimensional array. The signal processing unit (201) signals the output signal of the infrared sensor (100) to continuously generate static thermal image data. The selection unit (202) selects the detection unit (2) for outputting the output signal to the signal processing unit (201) among the plurality of detection units (2). The selection unit (202) has a mode for selecting an arbitrary detection unit (2) corresponding to one static thermal image data among the plurality of detection units (2) according to a specific condition.

In the infrared sensor device (300; 300A) according to the first aspect, it is possible to increase the frame rate.

In the infrared sensor device (300; 300A) according to the second aspect, in the first aspect, the selection unit (202) further has a mode for selecting all of the plurality of detection units (2).

In the infrared sensor device (300; 300A) according to the second aspect, one static thermal image data can be generated based on the output signals of the plurality of detection units (2).

The infrared sensor device (300) according to the third aspect further includes a region detection unit (203) in the first or second aspect. The region detection unit (203) detects the object region (E1) corresponding to the object on the static thermal image (P1) corresponding to the static thermal image data generated by the signal processing unit (201). The specific condition is that the object region (E1) is detected by the region detection unit (203). The selection unit (202) selects the group of the detection unit (2) corresponding to the group of pixels in the object region (E1) from the plurality of detection units (2).

In the infrared sensor device (300) according to the third aspect, it is possible to increase the frame rate.

In the infrared sensor device (300) according to the fourth aspect, in the third aspect, the object is a person.

In the infrared sensor device (300) according to the fifth aspect, in the fourth aspect, each of the pixel values of the plurality of pixels in the static thermal image (P1) is the temperature. The infrared sensor device (300) according to the fifth aspect further includes an estimation unit (204). The estimation unit (204) estimates the feeling of warmth and coldness of a person.

In the infrared sensor device (300) according to the fifth aspect, it is possible to estimate the feeling of warmth and coldness only for a person corresponding to the object region (E1) detected by the region detection unit (203).

In the infrared sensor device (300) according to the sixth aspect, in the fourth or fifth aspect, the selection unit (202) is a detection unit (2) corresponding to a collection of pixels among the plurality of detection units (2). When selecting, the pixel including the center of gravity (C1) of the area corresponding to the human face in the object area (E1) or one pixel closest to the center of gravity (C1) is set as the center pixel from the center pixel to the outer pixel. In turn, the corresponding detector (2) is selected.

In the infrared sensor device (300A) according to the seventh aspect, in the second aspect, the selection unit (202) corresponds to the static thermal image data of one of the plurality of detection units (2) according to a specific condition. When selecting an arbitrary detection unit (2) to be to be performed, the plurality of detection units (2) are divided into an arbitrary plurality of groups (G1), and the plurality of groups (G1) are selected in order.

In the infrared sensor device (300A) according to the seventh aspect, it is possible to increase the frame rate.

In the infrared sensor device (300A) according to the eighth aspect, in the seventh aspect, the selection unit (202) is a pixel or a center of gravity (C11) including the center of gravity (C11) of the region corresponding to each of the plurality of groups (G1). The corresponding detection unit (2) is selected in order from the center pixel to the outer pixel, with one pixel closest to C11) as the center pixel.

In the infrared sensor device (300; 300A) according to the ninth aspect, in any one of the first to eighth aspects, the infrared sensor (100) includes a substrate (1), a film structure (3), and the like. Has. The substrate (1) has a first main surface (11) and a second main surface located on the opposite side of the first main surface (11) in the thickness direction (D1). The film structure (3) is supported by the substrate (1) on the first main surface (11) side of the substrate (1). The membrane structure (3) includes a plurality of detection units (2). The substrate (1) has a plurality of cavities (13) having a one-to-one correspondence with the plurality of detection units (2) on the first main surface (11) side.

In the infrared sensor device (300; 300A) according to the tenth aspect, in any one of the first to ninth aspects, each of the plurality of detection units (2) has a plurality of warm contacts (T1) and a plurality of hot contacts (T1). It contains a thermopile (6) with a cold contact (T2). In each of the plurality of detection units (2), a plurality of warm contacts (T1) are arranged so that the plurality of warm contacts (T1) overlap the corresponding cavities (13) among the plurality of cavities (13). In each of the plurality of detection units (2), a plurality of cold contacts (T2) are arranged so that the plurality of cold contacts (T2) do not overlap the corresponding cavities (13) among the plurality of cavities (13). ..

In the infrared sensor device (300; 300A) according to the tenth aspect, it is possible to improve the sensitivity of the infrared sensor (100).

The signal processing device (200; 200A) according to the eleventh aspect includes a signal processing unit (201) and a selection unit (202). The signal processing unit (201) signals the output signal of the infrared sensor (100) having a plurality of detection units (2) arranged in a two-dimensional array to continuously generate static thermal image data. The selection unit (202) selects the detection unit (2) for outputting the output signal to the signal processing unit (201) among the plurality of detection units (2). The selection unit (202) has a mode of selecting an arbitrary detection unit (2) corresponding to one static thermal image data among the plurality of detection units (2) according to a specific condition.

In the signal processing device (200; 200A) according to the eleventh aspect, it is possible to increase the frame rate.

The signal processing method according to the twelfth aspect includes a generation step and a selection step. In the generation step, the output signal of the infrared sensor (100) having a plurality of detection units (2) arranged in a two-dimensional array is signal-processed to continuously generate still thermal image data. In the selection step, the detection unit (2) for outputting the output signal to be signal-processed in the generation step is selected from the plurality of detection units (2). The selection step selects an arbitrary detection unit (2) corresponding to one static thermal image data among the plurality of detection units (2) according to a specific condition.

In the signal processing method according to the twelfth aspect, it is possible to increase the frame rate.

The configuration according to the second to tenth aspects is not an essential configuration for the infrared sensor device (300; 300A) and can be omitted as appropriate.

1 Substrate 2 Detection unit 11 1st main surface 13 Cavity 3 Membrane structure 4 Thermal infrared detection unit 6 Thermopile 100 Infrared sensor 200, 200A Signal processing device 201 Signal processing unit 202 Selection unit 203 Area detection unit 204 Estimating unit 300, 300A Infrared sensor device C1 Center of gravity C11 Center of gravity E1 Object area D1 Thickness direction G1 Group P1 Static thermal image T1 Warm contact T2 Cold contact

Claims (12)

An infrared sensor with multiple detectors arranged in a two-dimensional array,
A signal processing unit that continuously generates static thermal image data by processing the output signal of the infrared sensor.
The selection unit includes a selection unit that selects a detection unit that outputs the output signal to the signal processing unit among the plurality of detection units, and the selection unit is one of the plurality of detection units stationary according to a specific condition. It has a mode for selecting an arbitrary detection unit corresponding to thermal image data.
Infrared sensor device. The selection unit further has a mode for selecting all of the plurality of detection units.
The infrared sensor device according to claim 1. Further, a region detection unit for detecting an object region corresponding to the object on the static thermal image corresponding to the static thermal image data generated by the signal processing unit is provided.
The specific condition is a condition that the object region is detected by the region detection unit.
The selection unit selects a group of detection units corresponding to a group of pixels in the object region from the plurality of detection units.
The infrared sensor device according to claim 1 or 2. The object is a person,
The infrared sensor device according to claim 3. Each of the pixel values of the plurality of pixels in the static thermal image is a temperature.
Further provided with an estimation unit for estimating the feeling of warmth and coldness of the person.
The infrared sensor device according to claim 4. When the selection unit selects the detection unit corresponding to the group of pixels among the plurality of detection units, the selection unit is set to the pixel including the center of gravity of the region corresponding to the human face in the object region or the center of gravity. The corresponding detection unit is selected in order from the central pixel to the outer pixel, with one closest pixel as the central pixel.
The infrared sensor device according to claim 4 or 5. When selecting an arbitrary detection unit corresponding to one static thermal image data among the plurality of detection units according to the specific condition, the selection unit groups the plurality of detection units into arbitrary plurality of groups. Divide and select the plurality of groups in order,
The infrared sensor device according to claim 2. The selection unit selects the corresponding detection unit in order from the center pixel to the outer pixel, with the pixel including the center of gravity of the region corresponding to each of the plurality of groups or one pixel closest to the center of gravity as the center pixel. To do,
The infrared sensor device according to claim 7. The infrared sensor
A substrate having a first main surface and a second main surface located on the opposite side of the first main surface in the thickness direction.
It has a film structure supported by the substrate on the first main surface side of the substrate.
The membrane structure includes the plurality of detection units, and includes the plurality of detection units.
The substrate has a plurality of cavities having a one-to-one correspondence with the plurality of detection units on the first main surface side.
The infrared sensor device according to any one of claims 1 to 8. Each of the plurality of detectors includes a thermopile having a plurality of hot contacts and a plurality of cold contacts.
In each of the plurality of detection units, the plurality of warm contacts are arranged so that the plurality of warm contacts overlap the corresponding cavities among the plurality of cavities.
In each of the plurality of detection units, the plurality of cold contacts are arranged so that the plurality of cold contacts do not overlap the corresponding cavities among the plurality of cavities.
The infrared sensor device according to any one of claims 1 to 9. A signal processing unit that continuously generates static thermal image data by processing the output signal of an infrared sensor having a plurality of detection units arranged in a two-dimensional array.
The selection unit includes a selection unit that selects a detection unit that outputs the output signal to the signal processing unit among the plurality of detection units, and the selection unit is one of the plurality of detection units stationary according to a specific condition. It has a mode for selecting an arbitrary detection unit corresponding to thermal image data.
Signal processing device. A generation step of continuously generating static thermal image data by processing the output signal of an infrared sensor having a plurality of detection units arranged in a two-dimensional array.
A selection step for selecting a detection unit for outputting an output signal for signal processing in the generation step among the plurality of detection units is provided, and the selection step is one of the plurality of detection units according to a specific condition. Select any detector that corresponds to the static thermal image data,
Signal processing method.

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