JP2020143353A - Vacuum treatment apparatus - Google Patents

Abstract

To provide a vacuum treatment apparatus capable of preventing an occurrence of a transportation trouble.SOLUTION: A sputtering apparatus SM according to the invention includes a vacuum chamber 1 capable of forming a vacuum atmosphere, a stage 4 on which a substrate Sw is arranged in the vacuum chamber, and a circular platen ring 8 arranged around the stage at an interval. The sputtering apparatus further includes an AC power supply 44 for applying an AC voltage between the substrate and the platen ring with the substrate arranged on the stage, and a gas management means CU for managing a gap Cg between a shield plate and the substrate based on a capacity when an AC voltage is applied.SELECTED DRAWING: Figure 2

Description

The present invention includes a vacuum chamber capable of forming a vacuum atmosphere, a stage on which a substrate to be processed is installed in the vacuum chamber, and an annular protective plate arranged around the stage at intervals. Regarding the device.

For example, in the manufacturing process of a semiconductor device, there is a step of applying a predetermined vacuum treatment to a substrate to be processed such as a silicon wafer in a vacuum chamber capable of forming a vacuum atmosphere, and as a vacuum processing apparatus for carrying out such a step. A sputtering apparatus for forming a film by a sputtering method is known in, for example, Patent Document 1. This has a vacuum chamber, a target for sputtering is arranged in the upper part thereof, and a stage in which a substrate to be processed is installed facing the target is provided in the lower part in the vacuum chamber. The stage is provided with, for example, a metal base having a tubular contour and a chuck plate provided on the upper surface of the base, and a chuck is provided by applying a predetermined voltage to an electrode for an electrostatic chuck embedded in the chuck plate. The substrate to be processed is electrostatically adsorbed on the plate surface.

When a film is formed on a substrate to be processed by the sputtering apparatus, the sputtered particles generated by sputtering the target scatter from the surface of the target according to a predetermined cosine rule, but adhere to and deposit on a substrate other than the substrate to be processed. For this reason, in general, an annular protective plate, which is also called a platen ring or a covering, is set around the stage (chuck plate) with concentric and predetermined gaps, and is around the stage and from the substrate to be processed. Prevents sputter particles from wrapping around and adhering to the space below (including the back surface of the substrate to be processed that extends radially outward from the chuck plate when the substrate to be processed is electrostatically attracted to the surface of the chuck plate). .. Then, the adhesive plate is repeatedly reused after being subjected to a peeling treatment of the deposited film such as blasting before the deposited film on the surface reaches a predetermined film thickness.

Here, after the film is formed on the substrate to be processed, when the film-deposited substrate is transferred from the stage to the vacuum transfer robot and carried out from the vacuum chamber, the substrate to be processed is cracked or chipped, so-called transfer. It turns out that trouble may occur. Therefore, the inventor of the present application has made extensive studies and has come to find out the following.

That is, when the peeling process is repeatedly performed on the protective plate, the protective plate becomes thin and deformed (for example, when the substrate to be processed is electrostatically adsorbed on the surface of the chuck plate, it is radially outward from the chuck plate. The wall thickness of the inner edge side of the protective plate facing the back surface of the extending substrate to be processed becomes thin, or the inner edge of the annular protective plate is locally scraped to locally reduce the inner diameter of the protective plate. It gets bigger). In addition, when setting the peeling-treated protective plate, the protective plate may be set in a posture that is displaced in one radial direction with respect to the stage or in a posture that is tilted with respect to the stage (). Incorrect setting of so-called protective plate). In such a case, a locally large portion is generated in the gap between the inner edge of the protective plate and the side surface of the stage and the gap between the protective plate and the back surface of the substrate to be processed. When sputtering is performed in such a state, more sputtered particles wrap around from a portion having a large gap, so that sputtered particles adhere to and accumulate on the back surface of the substrate to be processed, the side surface of the stage, and the outer peripheral edge of the upper surface thereof. As a result, local sticking of the substrate to be processed to the stage occurs, and transfer trouble occurs.

Japanese Unexamined Patent Publication No. 2014-91861

In view of the above points, it is an object of the present invention to provide a vacuum processing apparatus capable of preventing the occurrence of transfer troubles.

In order to solve the above problems, a vacuum chamber capable of forming a vacuum atmosphere, a stage on which a substrate to be processed is installed in the vacuum chamber, and an annular protective plate arranged around the stage at intervals. The vacuum processing apparatus of the present invention including the above is an AC power supply that applies an AC voltage between the substrate to be processed and the adhesive plate in a state where the substrate to be processed is installed on the stage, and a static voltage when the AC voltage is applied. It is further provided with a gap management means for managing a gap between the adhesive plate and the substrate to be processed based on the electric capacity.

Here, according to a trial-and-error study by the inventors of the present application, the protective plate is compared with a state in which the protective plate is set at a normal position around the stage where the gap is substantially constant over the entire stage. It was found that when the gap is (locally) changed due to thinning or erroneous setting, the capacitance between the substrate to be processed and the adhesive plate installed on the stage also changes. Based on such knowledge, in the present invention, an AC power source that applies an AC voltage between the substrate to be treated and the substrate to be treated, and the substrate to be treated and the substrate to be treated based on the capacitance at this time. A configuration was adopted in which a gap management means for managing the gap between the gaps was provided. According to this, the capacitance at the normal position of the adhesive plate, which is experimentally obtained in advance, is used as a reference value, and if the measured capacitance changes beyond the predetermined range from the reference value, it is subjected to sputtering. At the time of film formation, it can be determined that the adhesive plate is thinned or erroneously set due to the local sticking of the substrate to be processed to the stage. As a result, it is possible to prevent transfer troubles caused by local sticking of the substrate to be processed to the stage. It should be noted that the present invention includes a case where the gap between the adhesive plate and the substrate to be processed is managed based on the capacitance measured using the management substrate which is a jig.

In the present invention, when the stage includes a metal base and a chuck plate having an electrostatic chuck electrode provided on the upper surface of the base, the stage is provided from the AC power source via the electrostatic chuck electrode. An AC voltage can be applied between the substrate and the protective plate. According to this, since the electrode for the electrostatic chuck is also used as an electrode for obtaining the capacitance, the number of component parts can be reduced, which is advantageous.

In the present invention, it is preferable that the stage has a plurality of electrodes provided along the outer circumference thereof at intervals, and the AC power supply applies an AC voltage between each electrode and the protective plate. .. According to this, an AC voltage is applied between the substrate and the adhesive plate via each electrode, the capacitance of each can be measured, and the local bias (direction) of the capacitance can be detected. can do. As a result, it is possible to detect the positional relationship between the protective plate and the stage, that is, in which direction the protective plate is erroneously set.

In order to solve the above problems, a vacuum chamber capable of forming a vacuum atmosphere, a stage on which a substrate to be processed is installed in the vacuum chamber, and an annular protective plate arranged around the stage at intervals. In the vacuum processing apparatus of the present invention including the above, the stage has a plurality of electrodes provided on the outer peripheral surface thereof at intervals in the circumferential direction, and a selection means for selecting any one of the plurality of electrodes. And the gap between the protective plate and the stage based on the electrostatic capacity when the AC voltage is applied and the AC power supply that applies the AC voltage between the electrode and the protective plate selected by the selection means. It is characterized by further providing a gap management means for managing.

Based on the above findings, in the present invention, an AC power source that applies an AC voltage between each electrode provided on the outer peripheral surface of the stage and the adhesive plate, and an AC power supply based on the capacitance at that time. A configuration was adopted in which a gap management means for managing the gap between the stage and the outer peripheral surface was provided. According to this, the capacitance at the normal position of the adhesive plate, which is experimentally obtained in advance, is used as a reference value, and if the measured capacitance changes beyond the predetermined range from the reference value, it is subjected to sputtering. At the time of film formation, it can be determined that the adhesive plate is thinned or erroneously set due to the local sticking of the substrate to be processed to the stage. As a result, it is possible to prevent transfer troubles caused by local sticking of the substrate to be processed to the stage.

The schematic diagram which shows the sputtering apparatus of embodiment of this invention. The figure which shows a part of FIG. 1 enlarged. (A) and (b) are schematic views showing a modification of the present invention. (A) is a schematic cross-sectional view showing a modification of the present invention, and (b) is a schematic bottom view of the management substrate shown in FIG. 4 (a). (A) and (b) are schematic views showing a modification of the present invention.

Hereinafter, referring to the drawings, the vacuum processing apparatus of the present invention is an example of a sputtering apparatus in which a substrate to be processed is a silicon wafer (hereinafter referred to as “substrate Sw”) and a predetermined thin film is formed on the surface of the substrate Sw by a sputtering method. The embodiment of the above will be described. In the following, the term indicating the direction is based on the installation posture shown in FIG.

With reference to FIG. 1, SM is the sputtering apparatus of this embodiment. The sputtering apparatus SM includes a vacuum chamber 1 capable of forming a vacuum atmosphere. A cathode unit 2 is detachably attached to the upper surface opening of the vacuum chamber 1. The cathode unit 2 is composed of a target 21 and a magnet unit 22 arranged above the target 21. As the target 21, known ones such as aluminum, copper, titanium and alumina are used depending on the thin film to be formed on the surface of the substrate Sw. Then, the target 21 is mounted on the backing plate 21a, and the sputter surface 21b is placed downward, and the target 21 is placed on the upper wall of the vacuum chamber 1 via an insulator 31 also used as a vacuum seal provided on the upper wall of the vacuum chamber 1. Attached to.

An output 21d from a sputter power source 21c composed of a DC power source, an AC power source, or the like is connected to the target 21, and depending on the target type, for example, DC power having a negative potential or a high frequency of a predetermined frequency. Electric power (AC power) can be input. The magnet unit 22 is known to generate a magnetic field in the space below the sputtering surface 21b of the target 21, capture electrons and the like ionized below the sputtering surface 21b during sputtering, and efficiently ionize the sputtered particles scattered from the target 21. It has a closed magnetic field or a cusp magnetic field structure, and detailed description thereof will be omitted here.

A stage 4 is arranged below the vacuum chamber 1 so as to face the target 21. The stage 4 is provided on a metal (for example, stainless steel) base 41 having a tubular contour, which is installed via an insulator 32 provided in the lower part of the vacuum chamber 1, and on the upper surface of the base 41. For example, a chuck plate 42 made of aluminum nitride is provided. The chuck plate 42 has an upper surface having an outer diameter one size smaller than that of the base 41, and also has an extending portion 42a extending radially outward from the lower portion of the side surface of the chuck plate 42. At least one electrode 42b for an electrostatic chuck (two in this embodiment) is embedded in the chuck plate 42, and the chuck is chucked by applying a DC voltage to the electrode 42b from a DC power supply serving as a chuck power supply 43. The substrate Sw can be electrostatically adsorbed on the upper surface of the plate 42. In the present embodiment, since the upper surface of the chuck plate 42 has an outer diameter smaller than that of the substrate Sw, when the substrate Sw is electrostatically adsorbed on the upper surface of the chuck plate 42, the substrate Sw is radially outside the chuck plate 42. Is extended.

A gas pipe 5 for introducing a sputter gas is connected to the side wall of the vacuum chamber 1, and the gas pipe 5 communicates with a gas source (not shown) via a mass flow controller 51. The sputter gas includes not only a rare gas such as argon gas introduced when forming plasma in the vacuum chamber 1 but also a reaction gas such as oxygen gas and nitrogen gas. An exhaust pipe 62 leading to a vacuum pump 61 composed of a turbo molecular pump, a rotary pump, or the like is also connected to the lower wall of the vacuum chamber 1, evacuates the inside of the vacuum chamber 1 at a constant speed, and sputter gas is discharged during sputtering. The vacuum chamber 1 can be held at a predetermined pressure in the introduced state.

In the vacuum chamber 1, around the stage 4, a space around the stage 4 and below the substrate Sw (when the substrate Sw is electrostatically attracted to the upper surface of the chuck plate 42, it extends radially outward from the chuck plate 42. A platen ring 7 that functions as a protective plate for preventing the wraparound adhesion of sputtered particles to (including the back surface of the substrate Sw to be ejected) is provided with a gap. The platen ring 7 is made of a known material such as alumina or stainless steel, and when the platen ring 7 is made of an insulator such as alumina, its surface is coated with a metal film. The platen ring 7 is provided on the upper surface of the extending portion 42a of the chuck plate 42 via an insulator 33. The wall thickness of the platen ring 7 (inner edge side portion 71) is sized so that the gap Cg between the platen ring 7 and the substrate Sw is within a predetermined range.

Further, in the vacuum chamber 1, for example, a stainless steel protective plate 8 is provided to prevent the sputtered particles generated by the sputtering of the target 21 from adhering to the inner wall surface of the vacuum chamber 1. The protective plate 8 is composed of an upper protective plate 81 and a lower protective plate 82, each of which has a tubular contour. The upper protective plate 81 is suspended via a locking portion 11 provided above the vacuum chamber 1. The lower protective plate 82 is connected to a drive shaft 83a from a drive means 83 that extends through the lower wall of the vacuum chamber 1. The lower protective plate 82 is moved up from the film formation position shown in the drawing and the lower protective plate 82 to a predetermined height position by the driving means 83, and is moved to the stage 4 by a vacuum transfer robot (not shown). The substrate Sw is moved up and down with and from the transport position where delivery is performed.

The sputtering apparatus SM includes a control means CU provided with a microcomputer, a storage element, a sequencer, and the like, and the control means CU includes a sputtering power supply 21c, a chuck power supply 43, a mass flow controller 51, a vacuum pump 61, a driving means 83, and the like. It controls the operation of each part in an integrated manner. Although the details will be described later, the control means CU controls the operation of the AC power supply 44, the switch 45 and the ammeter 46, measures the capacitance between the substrate Sw and the platen ring 7, and measures the measured capacitance. Based on this, the gap Cg between the substrate Sw and the platen ring 7 is managed. Therefore, the control means CU corresponds to the gap management means in the claims. Since a known method can be used as the method for measuring the capacitance, detailed description thereof will be omitted in the present embodiment. Hereinafter, the film forming method will be described by taking the case where the target 21 is aluminum and the aluminum film is formed on the surface of the substrate Sw by the sputtering apparatus SM.

After setting various parts such as the target 21, the platen ring 7, and the protective plate 8 in the vacuum chamber 1, the vacuum pump 61 is operated to evacuate the inside of the airtightly maintained vacuum chamber 1. Next, the substrate W is installed on the upper surface of the chuck plate 42 of the stage 4 by a vacuum transfer robot (not shown). When the vacuum transfer robot retracts, the lower protective plate 82 moves downward from the transfer position to the film formation position. Then, by applying a DC voltage from the chuck power supply 43 to the electrode 42b for the electrostatic chuck, the substrate Sw is electrostatically adsorbed on the upper surface of the chuck plate 42.

When the pressure in the vacuum chamber 1 reaches a predetermined pressure (for example, ^10-5 Pa), argon gas as a sputtering gas is introduced through the gas pipe 5 at a constant flow rate (for example, the argon partial pressure is 0.5 Pa). At the same time, a predetermined power having a negative potential (for example, 3 to 50 kW) is applied to the target 21 from the sputtering power source 21c. As a result, plasma is formed in the vacuum chamber 1, the sputtered surface 21b of the target 21 is sputtered by the ions of argon gas in the plasma, and the sputtered particles from the target 21 adhere to and accumulate on the substrate Sw to form an aluminum film. Be filmed.

Here, there may be a place where the gap Cg between the substrate Sw and the platen ring 7 becomes (locally) large due to thinning of the platen ring 7 or erroneous setting, and when sputtering is performed in this state, the gap Cg More sputtered particles wrap around from the large portion, causing local sticking of the substrate Sw to the stage 4 and causing a transfer trouble. Since such transportation troubles lead to a decrease in productivity, it is necessary to prevent them in advance.

Therefore, in the present embodiment, when the switch 45 is turned on while the substrate Sw is electrostatically attracted to the upper surface of the chuck plate 42, an AC voltage is applied between the substrate Sw and the platen ring 7 via the electrode 42b. A power supply 44 and a current meter 46 for measuring the current value flowing when an AC voltage is applied from the AC power supply 44 are provided, and the control means CU has an electrostatic capacity from the AC voltage and the current value input from the current meter 46. Was configured to be able to measure. According to the findings of the inventors of the present application, the platen ring 7 is thinned or erroneously compared with the state in which the platen ring 7 is set at a normal position around the stage 4 where the gap Cg is substantially constant over the entire area. When the gap Cg changes locally due to the set, the capacitance also changes. Therefore, the capacitance at the normal position of the platen ring 7 obtained experimentally in advance is used as the reference value (see Experiment 1 described later), and the measured capacitance changes beyond the predetermined range from the reference value. It can be determined that the platen ring 7 is thin or erroneously set, which causes local adhesion of the substrate Sw to the stage 4 during film formation by sputtering. As a result, it is possible to prevent a transfer trouble caused by the local sticking of the substrate Sw to the stage 4.

Next, in order to confirm the above effect, the following experiment was carried out using the above sputtering apparatus SM. That is, in Experiment 1, the substrate Sw was a silicon wafer having a diameter of 300 nm, the target 21 was made of Al having a diameter of 400 mm, the substrate Sw was placed on the chuck plate 42 of the stage 4, and the voltage was applied to the electrode 42b to obtain the substrate Sw. Was electrostatically adsorbed. In this experiment 1, the platen ring 7 is set at a position (normal position) where the gap Cg between the electrostatically adsorbed substrate Sw and the platen ring 7 is substantially constant over the entire surface, and the gap Cg is set. It was 0.23 mm. In this state, an AC voltage of, for example, 10 kHz was applied between the substrate Sw and the platen ring 7, and the capacitance at this time was 1 nF, and the measured capacitance was used as a reference value. Then, when the pressure in the vacuum chamber 1 reached a predetermined pressure (for example, 1 × 10 ⁻⁵ Pa), the mass flow controller 51 was controlled to introduce argon gas at a predetermined flow rate (for example, 100 sccm). At the same time, a plasma atmosphere is formed in the vacuum chamber 1 by applying, for example, 5 kW of DC power having a negative potential from the sputtering power supply 21c to the target 21, and the sputtering surface 21b of the target 21 is sputtered to scatter. The sputtered particles were adhered to and deposited on the substrate Sw to form an aluminum film. It was confirmed that when the substrate Sw was transferred from the stage 4 to the vacuum transfer robot after the film formation, there was no local sticking of the substrate Sw to the stage 4 (chuck plate 42), and no transfer trouble occurred.

Next, as Experiment 2, a platen ring 7 which was repeatedly subjected to peeling treatment by blasting and became thin (the wall thickness of the inner edge side portion 71 became thin) was set, and the substrate Sw was electrostatically adsorbed on the chuck plate 42. .. The gap Cg between the electrostatically adsorbed substrate Sw and the platen ring 7 changed to 0.59 mm, and when the capacitance was measured in this state, it was 0.3 nF. Then, an aluminum film was formed on the substrate Sw using the same conditions as in Experiment 1. After the film formation, when the substrate Sw was transferred from the stage 4 to the vacuum transfer robot, it was confirmed that the substrate Sw was locally attached to the stage 4 (chuck plate 42). Therefore, it was found that when the measured capacitance changes by more than −0.7 nF from the reference value, it can be determined that the platen ring 7 is thin.

According to the above experiment, it was confirmed that the measured capacitance also changes with the change of the gap Cg. Further, if the platen ring 7 is thin or erroneously set, which causes local sticking of the substrate Sw to the stage 4, the measured capacitance is within a predetermined range (± 0.) set in advance by experiments or the like from the reference value. It was found that it changed beyond 7nF).

Although the embodiment of the present invention has been described above, the present invention is not limited to that of the above embodiment, and various modifications can be made as long as the gist of the present invention is not deviated. In the above embodiment, the case where the vacuum processing apparatus is the sputtering apparatus SM has been described as an example, but any vacuum processing apparatus may be provided with a ring-shaped protective plate in the vacuum chamber at intervals around the stage. For example, the present invention is not limited to this, and the present invention can be applied to, for example, a dry etching apparatus. Even in a dry etching apparatus, reaction products adhere to the surface of the adhesive plate to form a deposit film, and a peeling treatment such as blasting to peel off the deposit film is performed. Therefore, the above implementation is carried out by applying the present invention. The same effect as the morphology can be obtained.

In the above embodiment, an AC voltage is applied between the substrate Sw and the platen ring 7 via the electrode 42b, but as shown in FIG. 3, the chuck plate is placed on the upper surface of the chuck plate 42 (the substrate Sw mounting surface). A plurality of electrodes 42c (4 in the example shown in FIG. 3) are provided along the outer circumference of the 42 at intervals, and one of the electrodes 42c is selected by operating the switches 47a and 47b from the AC power supply 44. An AC voltage may be applied between the substrate Sw and the platen ring 7 via the selected electrode 42c. In this case, the electrodes 42c to which the AC voltage is applied can be changed by the switches 47a and 47b to measure the respective capacitance (or impedance value), and the local bias (direction) of the capacitance can be detected. be able to. Thereby, the positional relationship between the platen ring 7 and the chuck plate 42, that is, the direction in which the platen ring 7 is erroneously set can be detected. Alternatively, the electrodes 42c are changed during the film forming process to measure each capacitance (or impedance value), and if there is a difference in the measured capacitance (impedance value), it depends on the difference. By adjusting the transport position of the substrate Sw, it is possible to prevent transport troubles due to local changes in the gap.

In the above embodiment, the case of managing the gap Cg between the substrate Sw and the platen ring 7 has been described as an example, but the annular protective plate is not limited to the platen ring 7, for example, the substrate Sw and the lower protective plate. The present invention can also be applied when managing the gap Cg2 between 82 and 82. In this case, as shown in FIG. 4, the capacitance is measured using the management substrate 9 which is a jig, and the gap Cg2 between the substrate Sw and the undercoat plate 82 is determined based on the capacitance. Can be managed. The management substrate 9 is composed of a disk-shaped base 91 and an annular protruding portion 92 protruding downward from the outer peripheral portion of the base 91, and is a first portion of the protruding portion 92. The portion 92a is made of a conductive material and the remaining second portion 92b is made of an insulating material. An electrode 82a is provided on the lower surface of the lower protective plate 82, and the lower protective plate 82 can be energized via the electrode 82a. Not only a part of the protruding portion 92 but also a part of the base portion 91 may be formed of a conductive material. As shown in FIG. 4, the management board 9 is arranged so that the first portion 92a of the management board 9 and the right electrode 42c shown in FIG. 4A provided on the upper surface of the stage 42 are brought into contact with each other. In this state, the electrodes 82c are selected by operating the switches 47a and 47b in the same manner as in the example shown in FIG. 3, and the AC voltage between the selected electrodes 42c and the electrode 82a of the undercoat plate 82 from the AC power supply 44. Is applied and the capacitance (or impedance value) is measured. Then, after rotating the management board 9 by 90 degrees in the circumferential direction, the capacitance (or impedance value) is measured. By repeating this, the local bias (direction) of the capacitance can be detected. Thereby, it is possible to detect in which direction the platen ring 7 is erroneously set. The management substrate 9 is not limited to the one shown in FIG. 4, and may be any one having a conductive portion that contacts and conducts with the electrode 42c selected by the switches 47a and 47b.

When the chuck plate has an area larger than that of the substrate Sw, an annular protective plate called a covering that covers the peripheral edge of the chuck plate exposed on the radial outside of the substrate Sw is generally arranged. The present invention can also be applied to manage the gap between the substrate Sw and the covering.

The present invention can also be applied when the gap Cg3 between the outer peripheral surface 42d of the stage 42 and the platen ring 7 is managed. That is, as shown in FIG. 5, a plurality of electrodes 42e (4 in the example shown in FIG. 5) are provided on the outer peripheral surface 42d of the stage 42 at intervals in the circumferential direction, and a switch is provided in the same manner as in the example shown in FIG. One of the electrodes 42e may be selected by the operation of 47a and 47b, and an AC voltage may be applied from the AC power supply 44 between the selected electrode 42e and the platen ring 7. In this case as well, the electrode 42e to which the AC voltage is applied can be changed to measure each capacitance (or impedance value), and the local bias (direction) of the capacitance can be detected. Thereby, the positional relationship between the platen ring 7 and the chuck plate 42, that is, the direction in which the platen ring 7 is erroneously set can be detected. Alternatively, the electrodes 42e are changed during the film forming process to measure each capacitance (or impedance value), and if there is a difference in the measured capacitance (impedance value), it depends on the difference. By adjusting the transport position of the substrate Sw, it is possible to prevent transport troubles due to local changes in the gap. In the example shown in FIG. 5, the electrodes (excluding the electrostatic chuck electrode) 42e are provided only on the outer peripheral surface 42d of the stage 42, but the electrodes 42e are provided from the upper surface of the stage 42 to the outer peripheral surface 42d. May be good. Further, although the electrode 33a is provided on the upper surface of the insulator 33 and the platen ring 7 is energized through the electrode 33a, the platen ring 7 may be directly energized.

Cg ... Gap between the platen ring and the substrate, Cg2 ... Gap between the lower protective plate and the substrate, Cg3 ... Gap between the platen ring and the stage, CU ... Control means (gap management means), SM ... Sputtering device (vacuum processing device), Sw ... substrate (processed substrate), 1 ... vacuum chamber, 4 ... stage, 41 ... base, 42 ... chuck plate, 42c ... electrode for electrostatic chuck, 42e ... electrode, 43 ... AC power supply, 7 ... Platen ring (protection plate), 82 ... Lower protection plate (protection plate).

Claims (4)

In a vacuum processing apparatus including a vacuum chamber capable of forming a vacuum atmosphere, a stage on which a substrate to be processed is installed in the vacuum chamber, and an annular protective plate arranged around the stage at intervals.

With the substrate to be processed installed on the stage, the AC power supply that applies an AC voltage between the substrate to be processed and the protective plate, and the protective plate and the protective plate to be processed based on the capacitance when the AC voltage is applied. A vacuum processing apparatus further provided with a gap management means for managing a gap between the substrate and the substrate. The vacuum processing apparatus according to claim 1, wherein the stage includes a metal base and a chuck plate provided on the upper surface of the base and having an electrode for an electrostatic chuck.
The AC power supply is a vacuum processing device characterized in that an AC voltage is applied between an electrode for an electrostatic chuck and a protective plate. The vacuum processing apparatus according to claim 1, wherein the stage has a plurality of electrodes provided at intervals along the outer periphery thereof, and the AC power supply is between each electrode and the adhesion plate. A vacuum processing device characterized in that an AC voltage is applied to the. In a vacuum processing apparatus including a vacuum chamber capable of forming a vacuum atmosphere, a stage on which a substrate to be processed is installed in the vacuum chamber, and an annular protective plate arranged around the stage at intervals.
The stage has a plurality of electrodes provided on the outer peripheral surface thereof at intervals in the circumferential direction, and a selection means for selecting any one electrode from the plurality of electrodes, and an electrode selected by the selection means and a shield. It is further provided with an AC power supply that applies an AC voltage between the contact plate and a gap management means that manages a gap between the protection plate and the stage based on the capacitance when the AC voltage is applied. A featured vacuum processing device.

Images